Acoustic wave resonator package

Abstract

The present disclosure provides an acoustic resonator package including a substrate, an acoustic resonator disposed on the substrate, a cap disposed on the substrate and the acoustic resonator, and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator and an outer portion disposed outside the central portion and having a bonding surface. The outer portion includes protrusions bonded with the bonding portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer disposed on an area of the bonding surface formed on each of the protrusions.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2021-0090214, filed with the Korean Intellectual Property Office on July 9, 2021, the entire disclosure of which is incorporated herein by reference for all purposes. Technical Field

[0002] The following description pertains to acoustic resonator packages. Background Technology

[0003] Recently, with the rapid development of mobile communication devices, chemical and biological devices, the demand for small and lightweight filters, oscillators, resonant elements, acoustic resonant quality sensors, etc. used in these devices is also increasing.

[0004] Thin-film bulk acoustic resonators (FBARs) are known devices for realizing small and lightweight filters, oscillators, resonant elements, acoustic resonant quality sensors, etc. FBARs offer advantages because they can be mass-produced at minimal cost and can be implemented in very small sizes. Furthermore, FBARs can achieve high quality factor (Q) values ​​(a key characteristic of filters) and can be used in microbands, particularly for personal communication systems (PCS) and digital cordless systems (DCS) bands.

[0005] Typically, an FBAR may have a structure including a resonant portion achieved by sequentially stacking a first electrode, a piezoelectric layer, and a second electrode on a substrate.

[0006] When electrical energy is applied to the first and second electrodes to induce an electric field in the piezoelectric layer, the electric field can induce a piezoelectric phenomenon in the piezoelectric layer, causing the resonant part to vibrate in a predetermined direction. As a result, a bulk acoustic wave can be generated in the direction corresponding to the vibration direction, thereby causing resonance. That is, the FBAR can be a component utilizing bulk acoustic waves (BAW), and with the effective electromechanical coupling coefficient (k) of the piezoelectric layer… t 2 Increasing the frequency response of acoustic wave components can improve their frequency characteristics and enable wideband operation.

[0007] Furthermore, when encapsulating and using FBARs, the hermeticity of the package can greatly affect the reliability of the FBAR. Summary of the Invention

[0008] The present invention provides a simplified overview of the selected concepts, which are further described in the following detailed description. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used to help define the scope of the claimed subject matter.

[0009] In one general aspect, an acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cover disposed on the substrate and the acoustic resonator; and a bonding portion for bonding the substrate and the cover to each other. The cover includes a central portion accommodating the acoustic resonator and an outer portion disposed outside the central portion and having a bonding surface. The outer portion includes protrusions engaging with the bonding portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer disposed on regions of the bonding surface formed on each of the protrusions.

[0010] The thickness difference between the outer portion and the central portion may be greater than the depth of the at least one trench.

[0011] The first protective layer may be a conductive layer, which includes any one or any combination of two or more of the following: chromium (Cr), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), nickel (Ni), molybdenum (Mo), and titanium tungsten (TiW).

[0012] The second protective layer may include an oxide of at least one of silicon, aluminum and titanium and / or a nitride of at least one of silicon, aluminum and titanium.

[0013] The average thickness of the second protective layer may be less than or equal to 1 / 2 of the average width of the at least one trench.

[0014] The first protective layer may be provided only on the region formed on each of the protrusions of the bonding surface.

[0015] The second protective layer may be disposed within the at least one trench.

[0016] The first protective layer may be disposed on the area of ​​the bonding surface formed within the at least one groove.

[0017] The second protective layer can completely cover the first protective layer.

[0018] The bonding portion can completely cover the first protective layer.

[0019] The first protective layer may be disposed between the bonding surface and the second protective layer.

[0020] The second protective layer may be disposed between the bonding surface and the first protective layer.

[0021] The bonding portion may not include alloys.

[0022] In another general aspect, an acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cover disposed on the substrate and the acoustic resonator; a bonding portion bonding the substrate and the cover to each other; and a through-silicon via (TSV) through the cover. The cover includes a central portion and a connecting portion, the central portion receiving the acoustic resonator, and the connecting portion having a bonding surface connected to the bonding portion. The connecting portion includes protrusions configured to bond to the bonding portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer disposed on regions of the bonding surface formed on each of the protrusions.

[0023] The TSV via may include a connection electrode. The connection electrode may contact the bonding portion.

[0024] The TSV via may include a connection electrode. The second protective layer may extend between the connection electrode and the connection portion.

[0025] The average thickness of the second protective layer may be less than or equal to 1 / 2 of the average width of the at least one trench.

[0026] The bonding portion may not include alloys.

[0027] The first protective layer may be provided only on the region formed on each of the protrusions of the bonding surface.

[0028] The second protective layer may be disposed within the at least one trench.

[0029] The first protective layer may be disposed on the area of ​​the bonding surface formed within the at least one groove.

[0030] The second protective layer can completely cover the first protective layer.

[0031] The bonding portion can completely cover the first protective layer.

[0032] The first protective layer may be disposed between the bonding surface and the second protective layer.

[0033] The second protective layer may be disposed between the bonding surface and the first protective layer.

[0034] In another general aspect, an acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cover disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cover, wherein the cover includes a central portion accommodating the acoustic resonator and an external portion disposed outside the central portion and having a bonding surface, wherein the external portion includes protrusions bonding with the bonding portion and at least one groove disposed between the protrusions, and wherein the acoustic resonator package further includes a first protective layer and a second protective layer disposed on regions of the bonding surface formed on each of the protrusions, and at least a portion of the bonding portion is disposed in the at least one groove.

[0035] At least a portion of the bonding portion may contact one of the first protective layer and the second protective layer in the at least one trench.

[0036] The bonding portion may be a bonding portion including metal, the first protective layer may include a conductive layer, and the second protective layer may include a nitride layer and / or an oxide layer.

[0037] Other features and aspects will be readily understood from the following detailed description and accompanying drawings. Attached Figure Description

[0038] Figure 1 This is a cross-sectional view showing an acoustic resonator package according to an embodiment.

[0039] Figure 2 yes Figure 1 An enlarged cross-sectional view of a portion of an acoustic resonator.

[0040] Figure 3 From Figure 1 Observe the plan view of the lower part of the lid.

[0041] Figure 4 This is a diagram illustrating the combination structure A of an embodiment of the present disclosure.

[0042] Figure 5 It is shown Figure 4 A diagram illustrating a variant form.

[0043] Figure 6 This is a diagram illustrating an acoustic resonator package according to another embodiment.

[0044] Figure 7 This is a diagram illustrating the combination structure B of another embodiment of the present disclosure.

[0045] Figures 8 to 10 It is shown Figure 7 Illustrations of different variations.

[0046] Throughout the accompanying drawings and detailed embodiments, the same reference numerals indicate the same elements. The drawings may not be drawn to scale, and for clarity, illustration, and convenience, the relative sizes, scales, and depictions of the elements in the drawings may be exaggerated. Detailed Implementation

[0047] The following detailed embodiments are provided to aid the reader in gaining a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, after understanding the disclosure of this application, various changes, modifications, and equivalents of the methods, apparatus, and / or systems described herein will be readily apparent. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein; rather, changes that will be readily understood after understanding the disclosure of this application are possible, except for operations that must occur in a specific order. Furthermore, for clarity and brevity, descriptions of features known in the art may be omitted.

[0048] The features described herein may be implemented in different forms and should not be construed as being limited to the examples described herein. Rather, the examples described herein have been provided merely to illustrate some of the many feasible ways of implementing the methods, apparatus, and / or systems described herein that will be readily understood upon understanding the disclosure of this application.

[0049] Here, it should be noted that the use of the term "may" in relation to embodiments or examples (e.g., what an embodiment or example may include or implement) means that there exists at least one embodiment or example that includes or implements such a feature, and is not limited to all embodiments or examples including or implementing such a feature.

[0050] Throughout the specification, when an element such as a layer, region, or substrate is described as being "on" another element, "connected to" another element, or "bonded to" another element, that element may be directly "on" another element, directly "connected to" another element, or directly "bonded to" another element, or there may be one or more other elements in between. In contrast, when an element is described as being "directly on" another element, "directly connected to" another element, or "directly bonded to" another element, there are no other elements in between.

[0051] As used herein, the term "and / or" includes any one or any combination of any two or more of the associated listed items.

[0052] Although terms such as “first,” “second,” and “third” may be used herein to describe various components, assemblies, regions, layers, or parts, these components, assemblies, regions, layers, or parts will not be limited by these terms. Rather, these terms are used only to distinguish one component, assembly, region, layer, or part from another. Therefore, without departing from the teaching of the examples described herein, the first component, first assembly, first region, first layer, or first part referred to as the first component, first assembly, first region, first layer, or first part may also be referred to as the second component, second assembly, second region, second layer, or second part.

[0053] For ease of description, spatial relative terms such as “above,” “above,” “below,” and “under” are used herein to describe the relationship between one element and another, as shown in the accompanying drawings. Such spatial relative terms are intended to include not only the orientation depicted in the drawings but also different orientations of the device during use or operation. For example, if the device in the drawings is flipped, an element described as “above” or “above” relative to another element will then be “below” or “under” relative to said other element. Therefore, the term “above” includes both “above” and “below” orientations depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relative terms used herein will be interpreted accordingly.

[0054] The terminology used herein is for the purpose of describing various examples only and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. The terms “comprising,” “including,” and “having” enumerate the presence of the stated features, quantities, operations, components, elements, and / or combinations thereof, but do not exclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0055] Due to manufacturing techniques and / or tolerances, the shapes shown in the accompanying drawings may vary. Therefore, the examples described herein are not limited to the specific shapes shown in the accompanying drawings, but include changes in shape that occur during manufacturing.

[0056] The features of the examples described herein can be combined in various ways that will be readily understood after understanding the disclosure of this application. Furthermore, while the examples described herein have multiple constructions, other constructions that will be readily understood after understanding the disclosure of this application are possible.

[0057] Figure 1 This is a cross-sectional view showing the acoustic resonator package 10 according to an embodiment. Figure 2 yes Figure 1 An enlarged cross-sectional view of a portion of the acoustic resonator 100. Figure 3 From Figure 1View the plan view of the lower part of the cover 220. Figure 4 This is a diagram illustrating the combination structure A of an embodiment of the present disclosure. Figure 5 It is shown Figure 4 A diagram illustrating a variant form.

[0058] Reference Figures 1 to 4 The acoustic resonator package 10 may include, for example, a substrate 110, an acoustic resonator 100, a cover 220, and a bonding portion 210. The cover 220 may include a central portion 221 accommodating the acoustic resonator 100 and an outer portion 222 disposed outside the central portion 221 and having a bonding surface 222b. The outer portion 222 may include protrusions 222a and at least one groove T disposed between the protrusions 222a. The protrusions 222a may extend toward the substrate 110 and may bond with the bonding portion 210. Both the protrusions 222a and the groove T may have rectangular cross-sections, but this disclosure is not limited thereto; for example, the cross-sections of the protrusions 222a and the groove T may have irregular shapes.

[0059] A first protective layer 230 and a second protective layer 240 may be disposed on the area of ​​the bonding surface 222b formed on the protrusion 222a. Typically, since acoustic resonators are susceptible to moisture, the cover 220 and substrate 110 require high hermeticity. A thermocompression bonding method, where metals are pressed under high temperature and pressure, can be used to bond the cover and substrate. When applying the thermocompression bonding method, the protrusion 222a and the trench T of the outer portion 222 can function to increase the bonding strength. In this case, during the thermocompression bonding process, the silicon, which is the material of the cover and substrate, may be exposed to react with the metal forming the bonding portion 210, or allow metal components to diffuse, resulting in defects. The acoustic resonator package 10 may include a first protective layer 230 and a second protective layer 240 disposed on the protrusion 222a to prevent the silicon of the cover 220 and / or substrate 110 from contacting the metal of the bonding portion 210 and to minimize the occurrence of defects in the area to be bonded, thereby improving the hermeticity of the cover 220 and / or substrate 110. The bonding portion 210 may be in direct contact with the substrate 110, or the bonding portion 210 may be bonded to the substrate 110 and other components may exist between the bonding portion 210 and the substrate 110 (for example, a first protective layer and a second protective layer or other components as described above may be provided between the bonding portion 210 and the substrate 110). As an example, the bonding portion 210 may be a bonding portion including metal.

[0060] The acoustic resonator 100 may be a thin-film bulk acoustic resonator. Hereinafter, a thin-film bulk acoustic resonator will be used as an example for description. The acoustic resonator 100 may include a substrate 110, an insulating layer 115, a film layer 150, a cavity C, a resonant element 120, and a capping layer 127.

[0061] The substrate 110 may be a silicon substrate. For example, a silicon wafer or a silicon-on-insulator (SOI) type substrate may also be used as the substrate 110. An insulating layer 115 may be disposed on the upper surface of the substrate 110 to electrically isolate the substrate 110 from the resonant unit 120. In addition, when the cavity C is formed during the manufacturing process of the acoustic resonator 100, the insulating layer 115 can prevent the substrate 110 from being etched by etching gas. In this case, the insulating layer 115 may be formed using any one or any combination of two or more of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), and aluminum nitride (AlN), and may be formed on the substrate 110 by chemical vapor deposition, RF magnetron sputtering, or evaporation.

[0062] A sacrificial layer 140 may be formed on an insulating layer 115, and a cavity C and an etch stop layer 145 may be disposed within the sacrificial layer 140. The cavity C may be an empty space and may be formed by removing a portion of the sacrificial layer 140. Since the cavity C is formed within the sacrificial layer 140, the resonant unit 120 formed on the sacrificial layer 140 may be formed completely planar. The etch stop layer 145 may be disposed along the boundary of the cavity C. The etch stop layer 145 may prevent etching beyond the cavity region during the process of forming the cavity C. Therefore, the horizontal region of the cavity C may be defined by the etch stop layer 145, and the vertical region of the cavity C may be defined by the thickness of the sacrificial layer 140.

[0063] Film 150 may be formed on sacrificial layer 140 to define the thickness (or height) of cavity C together with insulating layer 115. Therefore, film 150 may also be formed using a material that is not easily removed during the process of forming cavity C. For example, when a portion of sacrificial layer 140 (e.g., a region of the cavity) is removed using an etching gas based on halides (such as fluorine (F), chloride (Cl), etc.), film 150 may be formed using a material with low reactivity to the aforementioned etching gas. In this case, film 150 may include at least one of silicon dioxide (SiO2) and silicon nitride (Si3N4). Additionally, the film layer 150 can be a dielectric layer comprising any one or any combination of two or more of manganese oxide (MnO), magnesium oxide (MgO), zirconium dioxide (ZrO2), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium dioxide (HfO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), and zinc oxide (ZnO), or it can be a metal layer comprising any one or any combination of two or more of aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), gallium (Ga), and hafnium (Hf). However, the film layer is not limited to the foregoing examples.

[0064] A seed layer (not shown) made of aluminum nitride (AlN) can be formed on the film layer 150. Specifically, the seed layer can be disposed between the film layer 150 and the first electrode 121. In addition to AlN, dielectric materials or metals having a hexagonal close-packed (HCP) structure can also be used to form the seed layer. In an example using a metal to form the seed layer, the seed layer can be formed using titanium (Ti). The resonant unit 120 may include a first electrode 121, a piezoelectric layer 123, and a second electrode 125. In the resonant unit 120, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 can be stacked sequentially from the bottom of the resonant unit. Therefore, in the resonant unit 120, the piezoelectric layer 123 can be disposed between the first electrode 121 and the second electrode 125.

[0065] Since the resonant unit 120 can be formed on the film layer 150, the film layer 150, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 can be sequentially stacked on the substrate 110 to form the resonant unit 120. The resonant unit 120 can resonate the piezoelectric layer 123 according to the signal applied to the first electrode 121 and the second electrode 125 to generate a resonant frequency and an anti-resonant frequency. When the insertion layer 170, which will be described later, is formed, the resonant unit 120 can be divided into a central portion S and an extension portion E. In the central portion S, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are stacked substantially flat, and in the extension portion E, the insertion layer 170 is located between the first electrode 121 and the piezoelectric layer 123. The central portion S can be a region disposed around the center of the resonant unit 120, and the extension portion E can be a region disposed along the edge of the central portion S. Therefore, the extension portion E can refer to a region extending outward from the central portion S. The insertion layer 170 may have a sloping portion, the thickness of which increases with the distance from the central portion S. In the extension portion E, the piezoelectric layer 123 and the second electrode 125 may be disposed on the insertion layer 170. Therefore, the portions of the piezoelectric layer 123 and the second electrode 125 located in the extension portion E may have sloping surfaces following the shape of the insertion layer 170.

[0066] In this embodiment, the extension portion E may be defined as being included in the resonant unit 120. Therefore, resonance may also occur in the extension portion E. However, this disclosure is not limited thereto; depending on the structure of the extension portion E, resonance may not occur in the extension portion E, and resonance may only occur in the central portion S. The first electrode 121 and the second electrode 125 may be formed using conductors, for example, using any one or any combination of two or more metals including gold, molybdenum, ruthenium, iridium, aluminum, platinum, titanium, tungsten, palladium, tantalum, chromium, and nickel, but are not limited thereto. In the resonant unit 120, the area of ​​the first electrode 121 may be larger than the area of ​​the second electrode 125, and a first metal layer 180 may be formed on the first electrode 121 along the outer edge of the first electrode 121. Therefore, the first metal layer 180 may be configured to surround the second electrode 125.

[0067] Since the first electrode 121 can be disposed on the film layer 150, the first electrode 121 can be formed completely flat. Since the second electrode 125 can be disposed on the piezoelectric layer 123, the second electrode 125 can be formed curved corresponding to the shape of the piezoelectric layer 123. The second electrode 125 can be disposed throughout the entire central portion S and can be partially disposed in the extension portion E. Therefore, the second electrode 125 can include a portion disposed on the piezoelectric portion 123a (described later) of the piezoelectric layer 123 and a portion disposed on the curved portion 123b of the piezoelectric layer 123. For example, in an embodiment, the second electrode 125 can be configured to completely cover the piezoelectric portion 123a and partially cover the inclined portion 1231 of the piezoelectric layer 123. Therefore, the area of ​​the portion of the second electrode 125 disposed in the extension portion E can be smaller than the area of ​​the inclined surface of the inclined portion 1231, and the area of ​​the portion of the second electrode 125 located in the resonant unit 120 can be formed to be smaller than the area of ​​the piezoelectric layer 123.

[0068] A piezoelectric layer 123 may be formed on the first electrode 121. When the insertion layer 170, which will be described later, is formed, the piezoelectric layer 123 may be formed on both the first electrode 121 and the insertion layer 170. Zinc oxide (ZnO), aluminum nitride (AlN), doped aluminum nitride, lead zirconate titanate, quartz, etc., may be selectively used as materials for the piezoelectric layer 123. Doped aluminum nitride may also include rare earth metals, transition metals, or alkaline earth metals. For example, rare earth metals may include any one or any combination of two or more of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La), and the amount of rare earth metal may be from 1 at% to 20 at%. Transition metals may include any one or any combination of two or more of hafnium (Hf), titanium (Ti), zirconium (Zr), tantalum (Ta), and niobium (Nb). Alkaline earth metals may include magnesium (Mg).

[0069] The piezoelectric layer 123 may include a piezoelectric portion 123a disposed in the central portion S and a curved portion 123b disposed in the extension portion E. The piezoelectric portion 123a may be a portion directly stacked on the upper surface of the first electrode 121. Therefore, the piezoelectric portion 123a may be located between the first electrode 121 and the second electrode 125 and form a planar shape. The curved portion 123b may be a region extending outward from the piezoelectric portion 123a and located within the extension portion E. The curved portion 123b may be disposed on the insertion layer 170 (described later) and may have a raised shape following the shape of the insertion layer 170. Therefore, the piezoelectric layer 123 may be curved at the boundary between the piezoelectric portion 123a and the curved portion 123b, and the curved portion 123b may be raised to correspond to the thickness and shape of the insertion layer 170. The curved portion 123b may include an inclined portion 1231 and an extension portion 1232. The inclined portion 1231 may be a portion formed to be inclined along the inclined surface L of the insertion layer 170. Additionally, the extension portion 1232 may be a portion extending outward from the inclined portion 1231. The inclined portion 1231 may be formed parallel to the inclined surface L of the insertion layer 170, and the inclination angle of the inclined portion 1231 may be the same as or substantially the same as the inclination angle of the inclined surface L of the insertion layer 170.

[0070] The insertion layer 170 may be disposed along the surface formed by the film layer 150, the first electrode 121, and the etch stop layer 145. The insertion layer 170 may be disposed around the central portion S to support the curved portion 123b of the piezoelectric layer 123. Therefore, depending on the shape of the insertion layer 170, the curved portion 123b of the piezoelectric layer 123 may include an inclined portion 1231 and an extended portion 1232. The insertion layer 170 may be disposed in a region other than the central portion S. For example, the insertion layer 170 may be entirely disposed in a region other than the central portion S, or may be partially disposed in that region.

[0071] Furthermore, at least a portion of the insertion layer 170 may be disposed between the piezoelectric layer 123 and the first electrode 121. The side portion of the insertion layer 170 disposed along the boundary of the central portion S may be formed to have a thickness that increases with distance from the central portion S. Therefore, the insertion layer 170 may be formed with an inclined portion having an inclined surface L, wherein the side surface disposed adjacent to the central portion S in the insertion layer 170 has a constant inclination angle. If the inclination angle of the side surface of the insertion layer 170 is narrower than 5°, then to manufacture the insertion layer 170, the thickness of the insertion layer 170 may be made very thin, or the area of ​​the inclined surface L may be made excessively large. Therefore, there may be problems that the above configuration is difficult to achieve in practice.

[0072] Furthermore, if the tilt angle of the side surface of the insert layer 170 is greater than 70°, the tilt angle of the tilted portion 1231 of the piezoelectric layer 123 stacked on the insert layer 170 can also be greater than 70°. In this case, since the piezoelectric layer 123 may be excessively bent, cracks may appear in the bent portion of the piezoelectric layer 123. Therefore, in the embodiment, the tilt angle of the tilted surface L can be formed in the range of 5° to 70°. The insert layer 170 can be formed using materials such as silicon dioxide (SiO2), aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), magnesium oxide (MgO), zirconium dioxide (ZrO2), etc., and can be formed using a material different from the material of the piezoelectric layer 123. In addition, as needed, the region in which the insert layer 170 is disposed can be formed as a void (e.g., air). The void can be achieved by removing a portion of the insert layer 170 during the manufacturing process after all the resonant units 120 have been formed. In this embodiment, the thickness of the insertion layer 170 may be the same as or similar to the thickness of the first electrode 121. Furthermore, the thickness of the insertion layer 170 may be less than the thickness of the piezoelectric layer 123. When the thickness of the insertion layer 170 is less than the thickness of the piezoelectric layer 123, a tilted portion of the piezoelectric layer 123 can be formed due to the insertion layer without cracking, thereby contributing to improved resonator performance. The lower limit of the thickness of the insertion layer 170 is not particularly limited, but the thickness of the insertion layer 170 can be... Or larger, so as to easily control the deposition thickness and ensure thickness uniformity in the deposited wafer.

[0073] The resonant unit 120 may be spaced apart from the substrate 110 by a cavity C formed as an empty space. The cavity C may be formed by supplying an etching gas (or etching solution) to the inlet hole during the manufacturing process of the acoustic resonator 100 to remove a portion of the sacrificial layer 140. A capping layer 127 may be disposed along the surface of the acoustic resonator 100 to protect the acoustic resonator 100 from external factors. The capping layer 127 may be disposed along the surface formed by the second electrode 125, the bent portion 123b of the piezoelectric layer 123, and the insertion layer 170. The capping layer 127 may be formed using any one of silicon oxide (e.g., SiO2) based insulating materials, silicon nitride based insulating materials, aluminum oxide based insulating materials, and aluminum nitride based insulating materials. In addition, another capping layer 127 may be disposed on the substrate 110 between the acoustic resonator 100 and the bonding portion 210.

[0074] The first electrode 121 and the second electrode 125 may be formed to extend to the outside of the resonant unit 120, and the first metal layer 180 and the second metal layer 190 may be respectively disposed on the upper surface of the extension portion E. The first metal layer 180 and the second metal layer 190 may be formed using materials such as gold (Au), gold-tin (Au-Sn) alloy, copper (Cu), copper-tin (Cu-Sn) alloy, aluminum (Al), aluminum-germanium (Al-Ge) alloy, etc. The first metal layer 180 and the second metal layer 190 may be used as connecting lines for electrically connecting electrodes of another acoustic resonator disposed adjacent to the first electrode 121 and the second electrode 125 of the acoustic resonator 100, or may be used as connecting terminals for the first electrode 121 and the second electrode 125. However, this disclosure is not limited to the foregoing examples. Although Figure 1 The illustration shows a configuration where the insert layer 170 is removed beneath the second metal layer 190, but this disclosure is not limited to this configuration. For example, a configuration where the insert layer 170 is disposed beneath the second metal layer 190 can be implemented as needed. The first metal layer 180 may pass through the insert layer 170 and the capping layer 127 to bond to the first electrode 121. Furthermore, as... Figure 2 As shown, the area of ​​the first electrode 121 can be larger than the area of ​​the second electrode 125, and the first metal layer 180 can be formed on the peripheral region of the first electrode 121. Therefore, the first metal layer 180 can be disposed around the resonant unit 120 and can be configured to surround the second electrode 125.

[0075] As described above, the second electrode 125 can be stacked on the piezoelectric portion 123a and the inclined portion 1231 of the piezoelectric layer 123. In addition, the portion of the second electrode 125 disposed on the inclined portion 1231 of the piezoelectric layer 123 (e.g., the portion of the second electrode 125 disposed in the extension portion E) can be disposed only on a portion of the inclined surface of the inclined portion 1231, rather than on the entire inclined surface of the inclined portion 1231.

[0076] The cover 220 can be disposed on the substrate 110 and the acoustic resonator 100, and can be coupled to the substrate 110 via the coupling portion 210. The cover 220 can be configured to protect the acoustic resonator 100 from the influence of the external environment, and can be formed as a cover having an internal space to accommodate the acoustic resonator 100. For example, as... Figure 1 As shown, the cover 220 may include a central portion 221 that houses the acoustic resonator 100 and an outer portion 222 disposed outside the central portion 221 and connected to the connecting portion 210. In this case, the outer portion 222 may be made thicker than the central portion 221. The material constituting the cover 220 is not particularly limited, and the cover 220 may be, for example, a silicon wafer.

[0077] In an embodiment, the outer portion 222 of the cover 220 may include protrusions 222a and at least one groove T disposed between the protrusions 222a. The groove T may be a region separated by the protrusions 222a, such as... Figure 1 and Figure 3 As shown. At least one trench T may be provided in the outer portion 222. In the acoustic resonator package 10, the substrate 110 and the cover 220 may be joined by a bonding portion 210. As described in more detail later, the bonding portion 210 may be formed using metal, and may be formed, for example, by depositing gold (Au) on the substrate 110, depositing gold (Au) on the cover 220, and then hot-pressing the substrate 110 and the cover 220 together. Since the metal material used in the hot-pressing bonding method is bonded without liquefaction, the pressure and temperature for hot-pressing bonding can also be applied to the substrate 110 and the cover 220. The trench T and the protrusion 222a can be used to reduce the temperature and pressure applied to the substrate 110 and the cover 220 during the hot-pressing bonding process.

[0078] In an embodiment, the thickness difference between the outer portion 222 and the central portion 221 (e.g., the depth of the cavity formed in the central portion 221) may be greater than the depth of the trench T. This configuration can be achieved in a process that forms both the cavity of the central portion 221 and the trench T using the same etching process. The depth of the trench T may vary depending on the size of the acoustic resonator package 10, the size of the cover 220, etc., but should be thinner than the thickness forming the bonding portion 210. When the depth of the trench T is too deep, hermeticity may be adversely affected, such as by voids appearing when depositing the metal of the bonding portion 210.

[0079] The cover 220 may include a first protective layer 230 covering the surface forming the protrusion 222a. The first protective layer 230 can be used to prevent defects that may occur during the bonding process of the bonding portion 210, which will be described later, due to component diffusion between the silicon wafer and the bonding portion 210. Thus, when defects occur in the bonding portion 210, the bonding force between the cover 220 and the substrate 110 may be reduced. Consequently, the hermeticity of the acoustic resonator package 10 may be reduced, and its reliability may also be reduced. Additionally, the first protective layer 230 can be used to improve the bonding strength with the metal components forming the bonding portion 210.

[0080] A conductive layer comprising any one or any combination of two or more of chromium (Cr), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), nickel (Ni), molybdenum (Mo), and titanium tungsten (TiW) can be used as the first protective layer 230. The conductive layer constituting the first protective layer 230 has good compatibility with the metal constituting the bonding portion 210 and can effectively suppress the diffusion of the metal components included in the bonding portion 210 while maintaining excellent adhesion.

[0081] In the example, the first protective layer 230 may be disposed on the outer portion 222 of the cover, and may be disposed only on the area of ​​the mating surface 222b formed on the protrusion 222a of the outer portion 222. (See also...) Figure 4 The first protective layer 230 may be disposed on the region of the mating surface 222b formed on the protrusion 222a, and may not be disposed on any region other than the region of the mating surface 222b formed on the protrusion 222a. This example configuration can be manufactured by first forming the first protective layer 230 on the surface of the cover 220 and then etching the cover 220 to form the trench T and cavity. In the etching process of the cover, the first protective layer 230 formed on the trench T and cavity can be removed to form this configuration.

[0082] Reference Figure 5 In another example, the first protective layer 230' may be disposed on the surface of the protrusions 222a of the outer portion 222 of the cover 220-1 and in the interior space of the groove T. The first protective layer 230' may be disposed on the surface of the plurality of protrusions 222a and may also be disposed simultaneously in the interior space of the groove T separated by the plurality of protrusions 222a. The first protective layer 230' may be disposed on the sidewall of the interior space of the groove T and may be disposed on the bottom surface 222c of the groove T. The first protective layer 230' may, for example, be configured to contact the sidewall and bottom surface 222c of the groove T, and may be configured to contact other layers disposed on the sidewall and bottom surface 222c (as described later), but is not limited to this configuration. The configuration of this example can be made by first forming the cavity of the groove T and the cover 220-1, and then sequentially forming the second protective layer 240 and the first protective layer 230 thereon. The first protective layer may be disposed on the area where the mating surface is formed within at least one groove.

[0083] In one embodiment, the cover 220 may include a second protective layer 240 covering the surface forming the protrusion 222a. The second protective layer 240 may be disposed together with the first protective layer 230 on the region of the bonding surface 222b formed on the protrusion 222a.

[0084] In an embodiment, the second protective layer may include a nitride layer and / or an oxide layer. For example, the second protective layer 240 may include an oxide of at least one of Si, Al, and Ti and / or a nitride of at least one of Si, Al, and Ti. A second protective layer 240 comprising an oxide of at least one of Si, Al, and Ti and / or a nitride of at least one of Si, Al, and Ti may be formed to conformally cover the interior space of the trench T while having a thin thickness to effectively prevent the diffusion of metal components, etc.

[0085] In this example, the second protective layer 240 may be formed as a thermally diffusing silicon oxide (e.g., SiO2) film. In the case of thermally diffusing silicon oxide, a high-temperature process may be required to form the oxide film. Alternatively, the second protective layer 240 may be formed using processes capable of conformally depositing trenches T and protrusions 222a, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular vapor deposition (MVD), etc.

[0086] In the example, the second protective layer 240 may be disposed within the interior space of the groove T (formed in the mating surface 222b of the cover 220), as schematically shown in the outer portion 222 of the cover 220. Figure 4 As shown. (Refer to...) Figure 4 When the trench T is formed by etching the cover on which the first protective layer 230 is formed, as described above, the silicon (Si) wafer of the cover 220 may be exposed from the bottom surface 222c and sidewalls of the trench T, and defects may occur during the thermo-bonding process due to diffusion between the exposed silicon wafer and the metal components of the bonding portion 210. A second protective layer 240 may be disposed within the interior space of the trench T and may be used to separate the silicon wafer and the metal components of the bonding portion 210 from each other. Therefore, defects that may occur during the thermo-bonding process between the cover 220 and the substrate 110 can be prevented.

[0087] The structure described in the example above can be manufactured as follows: First, a first protective layer 230 is formed on the surface of the cover 220; the cover 220 is etched to form trenches T and cavities; then, a second protective layer 240 is deposited. During the etching process of the cover 220, the first protective layer 230 formed on the trenches T and cavities can be removed, and the second protective layer 240 can be formed on the first protective layer 230 remaining on the bonding surface 222b in the area formed on the protrusion 222a and on the exposed surface of the cover 220 to form the structure.

[0088] In another example, the first protective layer 230' and the second protective layer 240 may be disposed together in the groove T, as shown in the outer portion 222 of the cover 220-1. Figure 5 As shown. (Refer to...) Figure 5 When the second protective layer 240 is disposed in the groove T of the cover 220-1, and then the first protective layer 230' is deposited separately, the first protective layer 230' and the second protective layer 240 can be disposed together on the surface of the protrusion 222a of the outer portion 222 of the cover 220-1 and in the groove T, and the first protective layer 230' can be disposed on the surface of the second protective layer 240 disposed on the protrusion 222a and in the groove T.

[0089] In the example, the average thickness of the second protective layer 240 may be less than or equal to half the average width of the trench T. The thickness of the second protective layer 240 may be the shortest vertical distance from one surface of the second protective layer 240 to the other surface of the second protective layer 240, and the average thickness may refer to the arithmetic mean of the thicknesses measured in a cross-section passing through the center of the acoustic resonator 100. When the average thickness of the second protective layer 240 is greater than half the average width of the trench T, there may be problems in forming the desired trench T and protrusion 222a, and the bonding strength in the thermocompression bond may not increase.

[0090] In an embodiment, the second protective layer 240 may be configured to cover the first protective layer 230, such as... Figure 4 As shown. (Refer to...) Figure 4 A first protective layer 230 and a second protective layer 240 may be sequentially stacked on the bonding surface 222b of the protrusion 222a, and at least two protective layers may be disposed on the bonding surface 222b. The bonding surface 222b may be the surface bonded to the bonding portion 210, which will be described in more detail later. When a silicon (Si) wafer is used as a cover and the bonding portion is formed using a metal such as gold (Au), silicon (Si) may diffuse into the bonding portion, or gold (Au) may diffuse into the substrate 110 and / or the cover, resulting in defects. As a result, there may be a problem where the bonding force between the cover and the substrate 110 may be reduced, leading to deterioration of hermeticity. In the acoustic resonator package 10 according to this embodiment, the first protective layer 230 may be disposed on the bonding surface 222b, and the second protective layer 240 may be disposed on the first protective layer 230. Therefore, the contact between the bonding portion 210 and the cover 220 during the bonding process can be minimized to improve reliability. As an example, the first protective layer and the second protective layer as described above can also be provided between the substrate 110 and the bonding portion 210. The bonding method and bonding structure between the substrate 110 and the bonding portion 210 can be the same as the bonding method and bonding structure between the cover 220 and the bonding portion 210.

[0091] In another embodiment, such as Figure 5 As shown, the first protective layer 230' can be disposed on the second protective layer 240. (Refer to...) Figure 5The second protective layer 240 and the first protective layer 230' may be sequentially stacked on the mating surface 222b of the protrusion 222a of the cover 220-1. In this case, the first protective layer 230' may be configured to cover the second protective layer 240 and may be configured to contact the mating portion 210. When the first protective layer 230' is disposed on the second protective layer 240, the first protective layer 230' may be configured to at least cover the area of ​​the protrusion 222a forming the outer portion 222. Furthermore, the first protective layer 230' may be disposed between the mating portion 210 and the outer portion 222, the first protective layer 230' may be disposed on the outer portion 222, and the mating portion 210 may be configured to cover the first protective layer 230'.

[0092] As described above, the bonding portion 210 can bond the cover 220 / 220-1 and the substrate 110 to maintain the hermeticity of the acoustic resonator package. The bonding portion 210 may include metal.

[0093] In the example, the bonding portion 210 may not include an alloy. The statement "the bonding portion 210 may not include an alloy" means that the bonding portion 210 can be formed using the same metallic element, and indicates that the bonding portion 210 may include only one metallic element. The statement "the bonding portion 210 may not include an alloy" means that the bonding portion 210 does not contain an alloy, and indicates that the bonding portion 210 can be formed entirely using a single metal, but also includes the possibility that other components may be partially present in the bonding portion 210 due to contamination or error. Other components may be included in an amount of 10 wt% or less relative to the main metallic component constituting the bonding portion 210.

[0094] In the above example, the bonding portion 210 may include gold (Au). In this case, the bonding portion 210 may include other components, but gold (Au) may be the primary metal component. In the case of conventional acoustic resonator packages, bonding portions comprising alloys utilizing at least two types of metal components may be used. When using alloys, there is the advantage of easily controlling the temperature or pressure conditions of the bonding process, but the bonding strength of the bonding portion may be reduced because the bonding portion may be formed unevenly. In the acoustic resonator package 10 according to this example, since the bonding portion 210 can be formed substantially using a single gold (Au) component, the bonding portion 210 can be formed uniformly, and the hermeticity of the cover 220 / 220-1 can be further improved.

[0095] In the example, the bonding portion 210 may be configured to completely cover the protrusion 222a. Furthermore, the bonding portion 210 may be configured to completely cover the first protective layer 230 / 230'. See reference... Figure 4 and Figure 5The bonding portion 210 can be configured to completely cover the protrusion 222a provided on the outer portion 222 of the cover 220 / 220-1, and can be configured to completely cover the first protective layer 230 / 230' and the second protective layer 240 provided on the bonding surface 222b of the protrusion 222a. Since the bonding portion 210 is configured to cover the protrusion 222a, the bonding force between the cover 220 / 220-1 and the substrate 110 can be further improved.

[0096] In the above example, the outer portion 222 of the cover 220 / 220-1 may include a recessed portion 222d, and in this case, a mating portion 210 may be disposed on the recessed portion 222d of the outer portion 222. A portion of the mating portion 210 may be configured to contact the recessed portion 222d of the outer portion 222, and the mating portion 210 may be configured to contact the entire recessed portion 222d of the outer portion 222, but is not limited to this configuration.

[0097] In an embodiment, such as Figure 1 As shown, a plurality of through holes 112 passing through the substrate 110 may be provided on the lower surface of the substrate 110. Connecting conductors 115a and 115b may be formed in the through holes 112, and the connecting conductors 115a and 115b may be formed on the inner surface of the through holes 112, for example, on the entire inner wall of the through holes 112, but are not limited to this configuration. The connecting conductors 115a and 115b may have one end connected to an external electrode formed on the lower surface of the substrate 110 and the other end electrically connected to a first electrode 121 or a second electrode 125. For example, the first connecting conductor 115a may connect the first electrode 121 and the external electrode to each other, and the second connecting conductor 115b may connect the second electrode 125 and the external electrode to each other. Additionally, the first connecting conductor 115a and the second connecting conductor 115b may be respectively connected to solder balls 117a and 117b for connection to an external substrate, etc. Figure 1 Only two through holes 112 and two connecting conductors 115a and 115b are shown and described in this document, but this disclosure is not limited to this construction. A greater number of through holes 112 and connecting conductors 115a and 115b may be provided if desired.

[0098] Reference Figures 6 to 10In another embodiment, the acoustic resonator package 10-1 may include a substrate 110, an acoustic resonator 100, a cover 220-2 / 220-3 / 220-4 / 220-5, a bonding portion 210, and a through-silicon via (TSV) through the cover 220-2 / 220-3 / 220-4 / 220-5. The cover 220-2 / 220-3 / 220-4 / 220-5 may include a central portion 221 for receiving the acoustic resonator 100 and a connecting portion 223 disposed outside the central portion 221 and having a bonding surface 223b thereon. The connecting portion 223 may include protrusions 223a and at least one groove T disposed between the protrusions 223a. In this case, a first protective layer 230 and a second protective layer 240 may be disposed on the region of the bonding surface 223b formed on the protrusions 223a.

[0099] The through-silicon via (TSV) may include a connection electrode 250 disposed therein. The connection electrode 250 may be disposed in the TSV and may be connected to the bonding portion 210. The acoustic resonator package 10-1 of this embodiment can be electrically connected to the outside via the connection electrode 250. The connection electrode 250 may include, but is not limited to, copper (Cu).

[0100] In the example, the connecting electrode 250 disposed in the through-silicon via (TSV) can be configured as a contact bonding portion 210. (See reference...) Figure 7 and Figure 9 The connecting electrode 250 may be configured to directly contact the bonding portion 210, and may also be configured to simultaneously contact a portion of the first protective layer 230 and a portion of the second protective layer 240 / 240' disposed between the bonding portion 210 and the protrusion 223a. Furthermore, the connecting electrode 250 may be connected to solder balls 117 for connection to an external substrate, etc.

[0101] exist Figure 8 In the illustrated embodiment, the second protective layer 240' may extend and be disposed between the connecting electrode 250 and the connecting portion 223. (Refer to...) Figure 8 The second protective layer 240' is disposed on the connecting portion 223 of the cover 220-3 and may be configured to extend into the through-silicon via (TSV) via, for example, the second protective layer 240' may be disposed on the sidewall of the through-silicon via (TSV) via. In this case, the second protective layer 240' may be disposed between the bonding portion 210 and the connecting portion 223.

[0102] Figure 7 The connection portion 223 of the acoustic resonator package 10-1 according to an embodiment is shown. (Refer to...) Figure 7The first protective layer 230 is disposed on the connecting portion 223 of the cover 220-2, and may be disposed only on the area of ​​the mating surface 223b formed on the protrusion 223a of the connecting portion 223.

[0103] Figure 9 This is a schematic diagram illustrating the connection portion 223 of an acoustic resonator package according to another embodiment. (Refer to...) Figure 9 The first protective layer 230' and the second protective layer 240 may be disposed together on the protrusion 223a in the connecting portion 223 and in the groove T. In this case, the first protective layer 230' may be disposed on the sidewall in the groove T and may also be disposed on the bottom surface 223c of the groove T.

[0104] exist Figure 7 and Figure 8 In the illustrated embodiment, the cover 220-2 / 220-3 may include a second protective layer 240 / 240' covering the surface forming the protrusion 223a. The second protective layer 240 / 240' may be disposed together with the first protective layer 230 on the area of ​​the mating surface 223b formed on the protrusion 223a.

[0105] exist Figure 7 and Figure 9 In the illustrated embodiment, the second protective layer 240 may be disposed in a groove T formed in the mating surface 223b of the cover 220-2 / 220-4.

[0106] exist Figure 7 and Figure 8 In one embodiment, the second protective layer 240 / 240' may be configured to cover the first protective layer 230.

[0107] exist Figure 7 and Figure 8 In one embodiment, the first protective layer 230 may be disposed between the bonding surface 223b and the second protective layer 240 / 240'.

[0108] exist Figure 10 In another embodiment shown, in cover 220-5, the first protective layer 230' may be disposed on the second protective layer 240'. (Refer to...) Figure 10 The second protective layer 240' may extend and be disposed between the connecting electrode 250 and the connecting portion 223. The second protective layer 240' may be configured to extend into the through-silicon via (TSV) via. For example, the second protective layer 240' may be disposed on the sidewall of the TSV via. In this case, the second protective layer 240' may be disposed between the bonding portion 210 and the connecting portion 223, and the first protective layer 230' may be disposed only between the second protective layer 240' and the bonding portion 210.

[0109] exist Figures 6 to 10 In one embodiment, the average thickness of the second protective layer 240 / 240' may be less than 1 / 2 of the average width of the trench T.

[0110] In the example, the bonding portion 210 can be configured to completely cover the first protective layer 230 / 230'.

[0111] In an embodiment, the bonding portion 210 may not include an alloy.

[0112] In an embodiment, the connecting portion 223 of the cover 220-2 / 220-3 / 220-4 / 220-5 may include a recessed portion 223d, and in this case, the mating portion 210 may be disposed on the recessed portion 223d.

[0113] Figures 6 to 10 The detailed descriptions of the substrate 110, acoustic resonator 100, cover 220-2 / 220-3 / 220-4 / 220-5, bonding portion 210, first protective layer 230 / 230' and second protective layer 240 / 240' are the same as those described above and will therefore be omitted.

[0114] Various functions can be performed using acoustic resonator packages with the example structures disclosed herein. For example, multiple acoustic resonators can be disposed in the acoustic resonator package, and in this case, a trapezoidal filter structure, a lattice filter structure, or a filter structure combining multiple acoustic resonators can be implemented.

[0115] One of the various effects of the embodiments disclosed herein is that the substrate and cover of the acoustic resonator package provide an airtight seal, effectively protecting the acoustic resonator therein. The acoustic resonator package according to this disclosure minimizes external influences, thereby improving the reliability of the acoustic resonator package.

[0116] While this disclosure includes specific examples, it will be readily understood upon understanding the disclosure of this application that various changes in form and detail may be made to these examples without departing from the spirit and scope of the claims and their equivalents. The examples described herein are to be considered descriptive only and not for limiting purposes. The description of features or aspects in each example is to be considered applicable to similar features or aspects in other examples. Suitable results may be obtained if the described techniques are performed in a different order, and / or if components in the described system, architecture, apparatus, or circuit are combined in a different manner, and / or if components in the described system, architecture, apparatus, or circuit are replaced or added by other components or their equivalents. Therefore, the scope of this disclosure is not limited by the specific embodiments but by the claims and their equivalents, and all variations within the scope of the claims and their equivalents are to be construed as included in this disclosure.

Claims

1. An acoustic resonator package, comprising: substrate; An acoustic resonator is disposed on the substrate; A cover is disposed on the substrate and the acoustic resonator; as well as The bonding portion joins the substrate and the cover together. The cover includes a central portion that houses the acoustic resonator and an outer portion disposed outside the central portion and having a mating surface. The outer portion includes protrusions that engage with the connecting portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, which are disposed on the bonding surface in regions formed on each of the protrusions. Wherein, at the bonding surface where the protrusion overlaps with the bonding portion in the thickness direction of the acoustic resonator package, the first protective layer contacts the second protective layer, and the first protective layer is a conductive layer.

2. The acoustic resonator package according to claim 1, wherein, The thickness difference between the outer portion and the central portion is greater than the depth of the at least one trench.

3. The acoustic resonator package according to claim 1, wherein, The conductive layer includes any one or any combination of two or more of the following: chromium, titanium, titanium nitride, tantalum, tantalum nitride, nickel, molybdenum, and titanium-tungsten.

4. The acoustic resonator package according to claim 1, wherein, The second protective layer comprises an oxide of at least one of silicon, aluminum and titanium and / or a nitride of at least one of silicon, aluminum and titanium.

5. The acoustic resonator package according to claim 1, wherein, The average thickness of the second protective layer is less than or equal to 1 / 2 of the average width of the at least one trench.

6. The acoustic resonator package according to claim 1, wherein, The first protective layer is disposed only on the region formed on each of the protrusions of the bonding surface.

7. The acoustic resonator package according to claim 6, wherein, The second protective layer is disposed within the at least one trench.

8. The acoustic resonator package according to claim 1, wherein, The first protective layer is disposed on the bonding surface in the region formed within the at least one groove.

9. The acoustic resonator package according to claim 1, wherein, The second protective layer completely covers the first protective layer.

10. The acoustic resonator package according to claim 1, wherein, The bonding portion completely covers the first protective layer.

11. The acoustic resonator package according to claim 1, wherein, The first protective layer is disposed between the bonding surface and the second protective layer.

12. The acoustic resonator package according to claim 1, wherein, The second protective layer is disposed between the bonding surface and the first protective layer.

13. The acoustic resonator package according to claim 1, wherein, The bonding portion does not include alloys.

14. An acoustic resonator package, comprising: substrate; An acoustic resonator is disposed on the substrate; A cover is disposed on the substrate and the acoustic resonator; The substrate and the cover are joined together at the joint portion; as well as Through-silicon via (TSV) holes pass through the cap. The cover includes a central portion and a connecting portion. The central portion accommodates the acoustic resonator, and the connecting portion has a mating surface that connects to the mating portion. The connecting portion includes protrusions configured to engage with the connecting portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, which are disposed on the bonding surface in regions formed on each of the protrusions. The through-silicon via includes a connecting electrode, and the connecting electrode is in contact with the bonding portion. The second protective layer extends between the connecting electrode and the connecting portion.

15. The acoustic resonator package according to claim 14, wherein, At least a portion of the through-silicon via is disposed between two adjacent trenches in the at least one trench.

16. The acoustic resonator package according to claim 14, wherein, The first protective layer is a conductive layer.

17. The acoustic resonator package according to claim 14, wherein, The average thickness of the second protective layer is less than or equal to 1 / 2 of the average width of the at least one trench.

18. The acoustic resonator package according to claim 14, wherein, The bonding portion does not include alloys.

19. The acoustic resonator package according to claim 14, wherein, The first protective layer is disposed only on the region formed on each of the protrusions of the bonding surface.

20. The acoustic resonator package according to claim 14, wherein, The second protective layer is disposed within the at least one trench.

21. The acoustic resonator package according to claim 14, wherein, The first protective layer is disposed on the bonding surface in the region formed within the at least one groove.

22. The acoustic resonator package according to claim 14, wherein, The second protective layer completely covers the first protective layer.

23. The acoustic resonator package according to claim 14, wherein, The bonding portion completely covers the first protective layer.

24. The acoustic resonator package according to claim 14, wherein, The first protective layer is disposed between the bonding surface and the second protective layer.

25. The acoustic resonator package according to claim 14, wherein, The second protective layer is disposed between the bonding surface and the first protective layer.

26. An acoustic resonator package, comprising: substrate; An acoustic resonator is disposed on the substrate; A cover is disposed on the substrate and the acoustic resonator; as well as The joining portion combines the substrate and the cover. The cover includes a central portion that houses the acoustic resonator and an outer portion disposed outside the central portion and having a mating surface. The outer portion includes protrusions that engage with the connecting portion and at least one groove disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first and second protective layers being disposed on regions formed on each of the protrusions of the bonding surface, and at least a portion of the bonding portion being disposed in the at least one trench. Wherein, at least a portion of the bonding portion contacts the first protective layer in the first protective layer and the second protective layer disposed in the at least one trench, the first protective layer being a conductive layer, and the bonding portion being a bonding portion comprising metal.

27. The acoustic resonator package according to claim 26, wherein, The second protective layer includes a nitride layer and / or an oxide layer.

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