Flat panel detector and display device

Abstract

The present disclosure relates to a flat panel detector, comprising a substrate substrate, and a plurality of detection regions arranged in an array on the substrate substrate, each detection region sequentially comprises a photosensitive sensor and an optical structure in a direction away from the substrate substrate; the optical structure comprises a light collecting unit and a light filtering unit, the light collecting unit is used for receiving near-infrared light and ambient light emitted by a laser source and performing light collection, and the light filtering unit is used for shielding ambient light and transmitting near-infrared light; the photosensitive sensor comprises an amorphous silicon photodiode and a thin film transistor, the amorphous silicon photodiode is used for converting the near-infrared light transmitted by the light filtering unit into an electrical signal, and the thin film transistor is used for outputting the electrical signal to a reading signal line; the orthographic projection of the optical structure on the substrate substrate completely covers the orthographic projection of the photosensitive sensor on the substrate substrate, and the cross-sectional area of the optical structure in a direction parallel to the substrate substrate is greater than the cross-sectional area of the corresponding photosensitive sensor in the direction parallel to the substrate substrate.

Description

Technical Field

[0001] This disclosure relates to the field of near-infrared laser detection technology, and in particular to a flat panel detector and display device. Background Technology

[0002] With the continuous development of communication, electronic, and display technologies, display devices with human-computer interaction functions are receiving increasing attention. To achieve interactive applications of display panels in visible and near-infrared light, related technologies utilize upconversion materials to convert visible or near-infrared light into ultraviolet light, and then use metal-oxide transistors to respond to the ultraviolet light to achieve positioning and interaction of the interactive light beams. However, to improve the detection sensitivity of near-infrared light and reduce its impact on display efficiency, adjustments and modifications to existing display panel processes are required, necessitating additional process development and adjustments. This significantly impacts the yield rate of display panel production, making large-scale promotion difficult. Furthermore, the strong near-infrared laser light source signal poses certain safety risks. Summary of the Invention

[0003] To address the aforementioned technical problems, this disclosure provides a flat panel detector and display device, which solves the safety hazards associated with the complex integrated structure of near-infrared light detection and display modules and the strong near-infrared laser light source signal.

[0004] To achieve the above objectives, the technical solution adopted in this disclosure is: a flat panel detector, including a substrate and a plurality of detection regions arranged in an array on the substrate, wherein each detection region is provided with a photosensitive sensor and an optical structure in sequence along a direction away from the substrate;

[0005] The optical structure includes a focusing unit and a filtering unit. The focusing unit is used to receive near-infrared light and ambient light emitted from the laser source and focus the light. The filtering unit is used to block the ambient light and allow the near-infrared light to pass through.

[0006] The photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor. The amorphous silicon photodiode is used to convert the near-infrared light transmitted by the filter unit into an electrical signal, and the thin-film transistor is used to output the electrical signal to the read signal line.

[0007] The orthogonal projection of the optical structure onto the substrate completely covers the orthogonal projection of the photosensitive sensor onto the substrate.

[0008] Optionally, the light-concentrating unit and the light-filtering unit are independently arranged, with the light-concentrating unit located on the side of the light-filtering unit away from the substrate, and the orthogonal projection of the light-concentrating unit on the substrate completely covering the orthogonal projection of the light-filtering unit on the substrate.

[0009] Optionally, the light-concentrating unit is a transparent lens, and the light-filtering unit includes a black light-shielding film layer.

[0010] Optionally, the light-concentrating unit is a transparent lens, and the light-filtering unit includes a black light-blocking lens.

[0011] Optionally, the light-concentrating unit and the light-filtering unit are integrated into a single structure.

[0012] Optionally, the optical structure is a black light-shielding lens.

[0013] Optionally, the amorphous silicon photodiode includes a first electrode, a second electrode, and a photosensitive layer disposed sequentially along a direction away from the substrate, wherein the first electrode is connected to the drain or source of the thin-film transistor.

[0014] Optionally, the orthographic projection of the center of the amorphous silicon photodiode onto the substrate coincides with the orthographic projection of the center of the optical structure onto the substrate.

[0015] Optionally, a quantum dot film located between the optical structure and the photosensitive sensor is included for converting near-infrared light emitted by the optical structure into visible light, and the photosensitive sensor is used to convert the visible light into an electrical signal and output it.

[0016] This disclosure also provides a display device, which includes a display panel and a backlight module, as well as the aforementioned flat panel detector, wherein the flat panel detector is located between the display panel and the backlight module;

[0017] The display device also includes a signal processing structure for connecting to the photosensitive sensor via a read signal line to obtain a grayscale image of the laser spot.

[0018] Optionally, the display panel includes multiple pixels, the orthographic projection of the detection area on the display panel covers the multiple pixels, and the size of the detection area is 5-20 times the size of one pixel of the multiple pixels.

[0019] Optionally, the thickness of the black light-shielding film layer in the direction perpendicular to the substrate is 2-8 μm, and the size of the black light-shielding film layer in the direction parallel to the substrate is 3-50 μm larger than the size of the amorphous silicon photodiode.

[0020] Optionally, the photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor, wherein the size of the amorphous silicon photodiode is smaller than or equal to the size of a pixel in the display panel.

[0021] Optionally, the size of the pixels of the display panel is 1-10 times the size of the amorphous silicon photodiode, and the spacing between two adjacent amorphous silicon photodiodes is 5-20 times the spacing between two adjacent pixels on the display panel.

[0022] Optionally, the optical structure is a black light-blocking lens, or the light-concentrating unit is a transparent lens, the light-filtering unit includes a black light-blocking lens, and the photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor;

[0023] The cross-sectional area of ​​the black light-shielding lens in the direction parallel to the substrate is 4-10 times the area of ​​the amorphous silicon photodiode in the direction parallel to the substrate.

[0024] The beneficial effects of this disclosure are: by setting up the optical structure to concentrate and filter light, the detection sensitivity of near-infrared light can be improved, and the intensity of near-infrared light can be reduced under the light-concentrating effect of the optical structure, thereby improving safety. At the same time, the combination of a smaller area photosensitive sensor and a larger area optical structure makes the flat panel detector have high transmittance, which can reduce the impact on the display effect when integrated with the display module and reduce the integration process difficulty of the flat panel detector and the display module. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the display device structure in an embodiment of the present disclosure;

[0026] Figure 2 express Figure 1 A magnified schematic diagram of a local structure;

[0027] Figure 3 This represents a grayscale image of a light spot obtained by a flat panel detector in an embodiment of this disclosure;

[0028] Figure 4 This diagram illustrates the overlap of pixels in the detection area and the display panel in an embodiment of this disclosure.

[0029] Figure 5 Schematic diagram of the flat panel detector Figure 1 ;

[0030] Figure 6 Schematic diagram of the flat panel detector Figure 2 ;

[0031] Figure 7 Schematic diagram of the flat panel detector Figure 3 ;

[0032] Figure 8 Schematic diagram of the flat panel detector Figure 4 ;

[0033] Figure 9 Schematic diagram of the flat panel detector Figure 5 ;

[0034] Figure 10 This is a schematic diagram illustrating the circuit principle of a photosensitive sensor. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure are within the scope of protection of this disclosure.

[0036] In the description of this disclosure, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0037] In the liquid crystal display (LCD) industry, amorphous silicon is widely used as the active layer material for transistors in LCDs. Amorphous silicon is also easy to fabricate in large areas and has good compatibility with the display industry. However, its application in near-infrared detection is little known, mainly because amorphous silicon has a bandgap of 1.6~1.8 eV, and it is generally believed that amorphous silicon has no response to near-infrared light. However, our tests have found that amorphous silicon does have a near-infrared response. In tests using a fabricated amorphous silicon photodiode (thickness ~1µm), its external quantum efficiency (EQE) was approximately 0.03% in the 850nm wavelength band. The actually fabricated amorphous silicon flat panel detector demonstrated effective detection of a near-infrared laser source (850nm, 1mW), meeting the requirements for near-infrared interaction. Figure 3 The image shown is a grayscale image of a light spot obtained through an amorphous silicon detector.

[0038] refer to Figures 1-10 To address the aforementioned issues, this embodiment provides a flat panel detector 3, comprising a substrate and a plurality of detection regions 300 arrayed on the substrate. Each detection region 300 is provided with a photosensitive sensor and an optical structure in sequence along a direction away from the substrate.

[0039] The optical structure includes a focusing unit 304 and a filtering unit 303. The focusing unit 304 is used to receive near-infrared light 201 and ambient light 202 emitted by the laser source 1 and to focus the light. The filtering unit 303 is used to block the ambient light 202 and allow the near-infrared light 201 to pass through.

[0040] The photosensitive sensor includes an amorphous silicon photodiode 302 and a thin-film transistor 301. The amorphous silicon photodiode 302 is used to convert the near-infrared light 201 transmitted by the filter unit 303 into an electrical signal, and the thin-film transistor 301 is used to output the electrical signal through a read signal line.

[0041] The orthographic projection of the optical structure onto the substrate completely covers the orthographic projection of the photosensitive sensor onto the substrate, and the cross-sectional area of ​​the optical structure in the direction parallel to the substrate is greater than the cross-sectional area of ​​the corresponding photosensitive sensor in the direction parallel to the substrate.

[0042] In this embodiment, an amorphous silicon photodiode 302 is used to enable the large-area fabrication of crystalline silicon flat panel detectors. When integrating the flat panel detector 3 with the display module, no adjustments need to be made to the existing display panel 4 process. Taking advantage of the large-area fabrication capability of the flat panel detector 3, a 1:1 scale flat panel detector can be made for any display product. By externally attaching the flat panel detector 3 to the existing product display module, near-infrared human-computer interaction function can be realized, and it can be easily integrated into the display module.

[0043] When the flat panel detector 3 is integrated with the display module, the laser signal will inevitably suffer significant loss due to the obstruction of the display module before reaching the detector panel. At the same time, near-infrared light has a safety threshold for the human eye, and lasers with power densities exceeding a certain level are not suitable for use in consumer products.

[0044] Meanwhile, if a flat panel detector 3 is used to detect near-infrared lasers, the ultra-low absorption coefficient of amorphous silicon for near-infrared light means that a strong near-infrared laser source signal is required, which poses a certain degree of safety risk.

[0045] In this embodiment, the optical structure serves to focus and filter light. The near-infrared light 201 emitted by the laser source 1 can enter through the larger area of ​​the optical structure. After being focused and filtered by the optical structure, the near-infrared light 201 is concentrated onto the smaller area of ​​the photosensitive sensor. Compared with the technical solution of directly transmitting the near-infrared light 201 to the photosensitive sensor, the power of the laser source is reduced without reducing the detection effect, which can reduce safety concerns when using near-infrared light 201 for detection.

[0046] In this embodiment, the optical structure is located directly above the photosensitive sensor. The cross-sectional area of ​​the optical structure in the direction parallel to the substrate is larger than the cross-sectional area of ​​the corresponding photosensitive sensor in the same direction. This increases the effective photosensitive area of ​​the amorphous silicon photodiode 302, improves the sensitivity of the flat panel detector 3 to near-infrared light 201, and when the flat panel detector 3 is integrated with the display module, each optical structure corresponds to multiple pixels on the display module. Increasing the difference between the area of ​​the optical structure and the area of ​​the photosensitive sensor can achieve higher transmittance and reduce the impact of the flat panel detector 3 on the display effect of the display module.

[0047] It should be noted that the size of the amorphous silicon photodiode can be smaller than or equal to the size of the pixels in the display module to be integrated. For example, the size of the amorphous silicon photodiode can be 400 μm² to 40000 μm² (the size of the thin-film transistor 301 is generally very small, such as 7-8 μm or tens of μm, which can be ignored when calculating the size ratio between the photosensitive sensor and the pixels in the display module). Due to the setting of the optical structure, the size of the amorphous silicon photodiode 302 can be reduced in this embodiment, that is, the size of the photosensitive sensor can be reduced. In some embodiments, the size of the pixels in the display module is 1-10 times the size of the photosensitive sensor, while the size of the optical structure is 5-20 times the size of the pixels in the display module (in some embodiments, the size of the optical structure can be 1-5 mm). Through the cooperation of the optical structure and the photosensitive sensor, the transmittance can be improved while ensuring the detection effect of near-infrared light 201. In one embodiment of this embodiment, the transmittance of the flat panel detector 3 is greater than 99%, which greatly reduces the impact on the display effect when integrated with the display module.

[0048] In this embodiment, in order to reduce wiring, the amorphous silicon photodiode 302 is positioned close to the thin-film transistor 301 in a direction parallel to the substrate.

[0049] The focusing unit 304 focuses light to enhance the intensity of near-infrared light 201 entering the photosensitive sensor. The filtering unit 303 filters ambient light 202 and transmits near-infrared light 201 to avoid interference and improve detection accuracy. The specific structure of the focusing unit 304 and the filtering unit 303 can be set according to actual needs. They can be set separately or integrated.

[0050] In one embodiment of this example, the light-concentrating unit 304 and the light-filtering unit 303 are separately and independently arranged. The light-concentrating unit 304 is located on the side of the light-filtering unit 303 away from the substrate, and the orthogonal projection of the light-concentrating unit 304 on the substrate completely covers the orthogonal projection of the light-filtering unit 303 on the substrate.

[0051] refer to Figure 5 and Figure 6 In this embodiment, the light-concentrating unit 304 is a transparent lens, and the light-filtering unit 303 includes a black light-shielding film layer.

[0052] The transparent lens not only achieves a light-focusing effect but also improves transparency.

[0053] Near-infrared light 201 mixed with ambient light 202 is converged by a transparent lens, passes through a black light-shielding film layer, and is filtered out of the ambient light 202. The transmitted near-infrared light 201 reaches the amorphous silicon photodiode 302, is absorbed, and converted into an electrical signal. The presence of the transparent lens not only increases the actual sensing area of ​​the flat panel detector 3, but also, after integration with the display module, according to the principle of optical path reversibility, the backlight 6 of the display module is diffused through this transparent lens, which can greatly reduce the influence of the flat panel detector 3 on the display effect of the display module and eliminate unfavorable optical effects such as moiré patterns that may form between the pixel array of the display panel 4 and the detection area of ​​the flat panel detector 3.

[0054] In this embodiment, the center of the transparent lens coincides with the center of the amorphous silicon photodiode in a direction perpendicular to the substrate, effectively increasing the intensity of the near-infrared light 201 and improving the light utilization rate.

[0055] In one embodiment of this example, the black light-shielding film layer is a black matrix, but it is not limited thereto.

[0056] In this embodiment, the black light-shielding film layer is 2-8 μm thick and extends 3-50 μm beyond the photosensitive area of ​​the amorphous silicon diode to shield the influence of ambient light 202 and backlight 6 reflected light, and to minimize the impact on transparency.

[0057] refer to Figure 9 In one embodiment of this invention, the light-concentrating unit 304 is a transparent lens, and the light-filtering unit 303 includes a black light-shielding lens.

[0058] Focusing light from a larger diameter area to a smaller area, such as focusing light from a 3-5 mm diameter area onto the surface of an amorphous silicon photodiode 302 with a side length of only 30-50 μm, requires a transparent lens with a sufficiently high refractive index and a very large curvature, making the manufacturing process quite difficult. In this embodiment, the filter unit 303 is set as a black light-shielding lens. A transparent lens array is fabricated based on an array of black light-shielding lenses. That is, under the effect of dual light focusing, the light that originally needed to be focused from a 3-5 mm diameter area onto the surface of the amorphous silicon photodiode 302 with a side length of only 30-50 μm can now be focused onto the surface of a black light-shielding lens with a side length of 60-250 μm. This reduces the requirements for the transparent lens array, lowers the manufacturing difficulty, and broadens the range of materials that can be selected.

[0059] In one embodiment of this invention, the light-concentrating unit 304 and the light-filtering unit 303 are integrated into a single structure.

[0060] The light-concentrating unit 304 and the light-filtering unit 303 are integrated into a single structure, which simplifies the structural design compared to the separate light-concentrating unit 304 and the light-filtering unit 303.

[0061] refer to Figure 7 and Figure 8 In this embodiment, the optical structure is exemplarily a black light-blocking lens.

[0062] To balance the display effect and the detection effect of the flat panel detector 3, the size of the black light-shielding lens should not be too large or too small. If the black light-shielding lens is too large, it will affect the backlight transmittance 6 when integrated with the display module, thus affecting the display effect. If the black light-shielding lens is too small, it cannot effectively increase the actual sensing area of ​​the flat panel detector 3. Furthermore, because the edges of the black light-shielding lens are relatively thin, its ability to block visible light may be affected. Based on the above considerations, in a specific embodiment of this invention, the size of the black light-shielding lens is 4 to 10 times the area of ​​the photodiode. If the amorphous silicon photodiode 302 is 30*30um, then the diameter of the black light-shielding lens should be 60 to 100um. The sensitivity of the flat panel detector 3 can be improved by 4 to 10 times, while the impact on the display effect is not significant.

[0063] In this embodiment, the amorphous silicon photodiode 302 includes a first electrode, a second electrode, and a photosensitive layer disposed sequentially along a direction away from the substrate. The first electrode is connected to the drain or source of the thin-film transistor 301.

[0064] refer to Figure 10In this embodiment, the amorphous silicon photodiode 302 includes a P-terminal and an N-terminal. The P-terminal has a bias line that applies a fixed reverse bias voltage, typically -7V (which can be -1 to -10V). The N-terminal is connected to the source of the thin-film transistor 301, and its potential is consistent with the reference voltage on the readout IC (ROIC) in the readout circuit, typically +1V. When the amorphous silicon photodiode is irradiated by near-infrared laser, it absorbs photons, generating photogenerated electron-hole pairs. Electrons accumulate at the N-terminal, causing the N-terminal potential to change from +1V to the P-terminal potential. The amount of light signal that causes the N-terminal potential to change to the P-terminal potential is generally called the physical full-well signal, which is related to the capacitance of the amorphous silicon photodiode 302 itself. Generally, the detector operates within the linear region. When the thin-film transistor 301 is exposed to light, its source potential changes. The gate driver IC turns on the thin-film transistors 301 row by row. A potential difference exists between the source and drain terminals of the thin-film transistor 301 that has undergone a potential change. The light signal is converted into electrons that flow out and are read by the ROIC, which then converts them into grayscale information. Finally, the reading IC outputs a grayscale matrix, which is the grayscale image.

[0065] In this embodiment, the flat panel detector 3 further includes a reading circuit, which is used to read the electrical signal output by the thin film transistor 301 and output grayscale value information.

[0066] In this embodiment, the flat panel detector 3 can not only interact with the position of the near-infrared light source 201, but also determine the intensity of the near-infrared light 201 and the size of the formed light spot. This allows for the combination of various interactive functions to meet diverse user needs. For example, by assigning different emission powers to the near-infrared laser pen, the flat panel detector 3 can acquire real-time trajectory images of the laser spot's movement. Different laser intensities reflected on the flat panel detector 3 result in light spot images of different grayscale levels. These different grayscale ranges can be defined as functions such as left-click, right-click, and double-click. Furthermore, based on the ability of the flat panel detector 3 to determine the light spot size, different hands or different people holding laser pens with different emission diameters can be identified through the light spot images obtained by the flat panel detector 3. This allows for the determination of different hand operations and different person operations, which can be used for single-player or multi-player interactive games.

[0067] In this embodiment, the flat panel detector 3, as an example, further includes a quantum dot film located between the optical structure and the photosensitive sensor, for converting the near-infrared light 201 emitted by the optical structure into visible light, and the photosensitive sensor for converting the visible light into an electrical signal and outputting it.

[0068] The amorphous silicon photodiode 302 has a better detection effect on visible light than on near-infrared light 201. The quantum dot film converts near-infrared light 201 into visible light, which improves the detection effect of the flat panel detector 3.

[0069] This disclosure also provides a display device, which includes a display panel 4 and a backlight module 5, as well as the aforementioned flat panel detector 3, wherein the flat panel detector 3 is located between the display panel 4 and the backlight module 5;

[0070] The display device also includes a signal processing structure for connecting to the photosensitive sensor via a read signal line to obtain a grayscale image of the laser spot.

[0071] It should be noted that the location of the signal processing structure can be set according to actual needs. The signal processing structure can be integrated on the flat panel detector 3 or set on the display device.

[0072] This embodiment is exemplary, referencing Figure 4 The display panel 4 includes a plurality of pixels 400. The orthographic projection of the detection area 300 onto the display panel 4 covers the plurality of pixels 400, and the size of the detection area 300 is 5-20 times the size of one of the plurality of pixels 400. For example, the size b of the pixel 400 on the display module is 0.315mm, and the size a of each detection area 300 on the flat panel detector 3 is 3.15mm (i.e., the size of each detection area is 3.15mm).

[0073] In some embodiments of this example, the size of each detection area can be 1-5 mm, but is not limited thereto.

[0074] In this embodiment, the thickness of the black light-shielding film layer in the direction perpendicular to the substrate is 2-8 μm, and the size of the black light-shielding film layer in the direction parallel to the substrate is 3-50 μm larger than the size of the amorphous silicon photodiode 302, so as to minimize the impact on the backlight transmittance while ensuring the light filtering effect.

[0075] In this embodiment, the photosensor includes an amorphous silicon photodiode 302 and a thin-film transistor 301, wherein the size of the amorphous silicon photodiode 302 is smaller than or equal to the size of a pixel in the display panel 4.

[0076] In this embodiment, for example, the size of the pixels of the display panel is 1-10 times the size of the amorphous silicon photodiode, and the spacing between two adjacent amorphous silicon photodiodes is 5-20 times the spacing between two adjacent pixels on the display panel.

[0077] In this embodiment, each detection area in the flat panel detector includes a photosensitive sensor and an optical structure. The optical structure includes a focusing unit and a filtering unit. The photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor. The optical structure and the photosensitive sensor in the detection area cooperate to concentrate infrared light from a larger area onto the relatively small amorphous silicon photodiode (the size of the thin-film transistor is generally small, a few micrometers, and can be ignored). The size of the amorphous silicon photodiode is less than or equal to the size of a pixel on the display panel. In some embodiments of this embodiment, the size of the amorphous silicon photodiode is smaller than the size of a pixel on the display panel. For example, in a specific embodiment of this embodiment, the size of the photosensitive sensor is 400 μm² to 40000 μm², which improves the transmittance of the backlight and reduces the impact on the display effect of the display panel. Furthermore, the focusing effect of the focusing unit and the filtering effect of the filtering unit in the optical structure, compared with the technical solution of directly transmitting near-infrared light 201 to the photosensitive sensor, reduce the power of the laser source without reducing the detection effect, which can reduce safety concerns when using it to detect near-infrared light 201.

[0078] In this embodiment, the optical structure is exemplarily a black light-shielding lens, or the light-concentrating unit 304 is a transparent lens, the light-filtering unit 303 includes a black light-shielding lens, and the photosensitive sensor includes an amorphous silicon photodiode 302 and a thin-film transistor 301.

[0079] The cross-sectional area of ​​the black light-shielding lens in the direction parallel to the substrate is 4-10 times the area of ​​the amorphous silicon photodiode 302 in the direction parallel to the substrate.

[0080] By adopting the above solution, the filtering effect of the black light-blocking lens can be guaranteed, and the impact on the transmittance of the backlight 6 can be reduced.

[0081] The display device can be any product or component with display function, such as an LCD TV, LCD monitor, digital photo frame, mobile phone, or tablet computer. The display device also includes a flexible circuit board, a printed circuit board, and a backplate.

[0082] The above description represents a preferred embodiment of this disclosure. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles described herein, and these improvements and modifications should also be considered within the scope of protection of this disclosure.

Claims

1. A flat panel detector, wherein, It includes a substrate and multiple detection regions arranged in an array on the substrate, each of which is provided with a photosensitive sensor and an optical structure in sequence along a direction away from the substrate; The optical structure includes a focusing unit and a filtering unit. The focusing unit is used to receive near-infrared light and ambient light emitted from the laser source and focus the light. The filtering unit is used to block the ambient light and allow the near-infrared light to pass through. The photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor. The amorphous silicon photodiode is used to convert the near-infrared light transmitted by the filter unit into an electrical signal, and the thin-film transistor is used to output the electrical signal to the read signal line. The orthographic projection of the optical structure onto the substrate completely covers the orthographic projection of the photosensitive sensor onto the substrate. The cross-sectional area of ​​the optical structure in the direction parallel to the substrate is larger than the cross-sectional area of ​​the corresponding photosensitive sensor in the direction parallel to the substrate. The display panel includes multiple pixels, and the orthographic projection of the detection area onto the display panel covers the multiple pixels.

2. The flat panel detector according to claim 1, wherein, The light-concentrating unit and the light-filtering unit are independently configured. The light-concentrating unit is located on the side of the light-filtering unit away from the substrate, and the orthogonal projection of the light-concentrating unit on the substrate completely covers the orthogonal projection of the light-filtering unit on the substrate.

3. The flat panel detector according to claim 2, wherein, The light-concentrating unit is a transparent lens, and the light-filtering unit includes a black light-shielding film layer.

4. The flat panel detector according to claim 2, wherein, The light-concentrating unit is a transparent lens, and the light-filtering unit includes a black light-blocking lens.

5. The flat panel detector according to claim 1, wherein, The light-gathering unit and the light-filtering unit are integrated into a single structure.

6. The flat panel detector according to claim 5, wherein, The optical structure is a black light-blocking lens.

7. The flat panel detector according to claim 1, wherein, The amorphous silicon photodiode includes a first electrode, a second electrode, and a photosensitive layer disposed sequentially along a direction away from the substrate, wherein the first electrode is connected to the drain or source of the thin-film transistor.

8. The flat panel detector according to claim 7, wherein, The orthographic projection of the center of the amorphous silicon photodiode onto the substrate coincides with the orthographic projection of the center of the optical structure onto the substrate.

9. The flat panel detector according to claim 1, wherein, It also includes a quantum dot film located between the optical structure and the photosensitive sensor for converting near-infrared light emitted by the optical structure into visible light, and the photosensitive sensor for converting the visible light into an electrical signal and outputting it.

10. A display device, wherein, The device includes a display panel and a backlight module, and a flat panel detector as described in any one of claims 1-8, wherein the flat panel detector is located between the display panel and the backlight module; The display device also includes a signal processing structure for connecting to the photosensitive sensor via a read signal line to obtain a grayscale image of the laser spot.

11. The display device according to claim 10, wherein, The size of the detection area is 5-20 times the size of one pixel of the plurality of pixels.

12. The display device according to claim 11, wherein, The light-concentrating unit is a transparent lens, and the light-filtering unit includes a black light-shielding film layer. The thickness of the black light-shielding film layer in the direction perpendicular to the substrate is 2-8 μm, and the size of the black light-shielding film layer in the direction parallel to the substrate is 3-50 μm larger than the size of the amorphous silicon photodiode.

13. The display device according to claim 11, wherein, The photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor, wherein the size of the amorphous silicon photodiode is smaller than or equal to the size of a pixel in the display panel.

14. The display device according to claim 13, wherein, The size of the pixels on the display panel is 1-10 times the size of the amorphous silicon photodiode, and the spacing between two adjacent amorphous silicon photodiodes is 5-20 times the spacing between two adjacent pixels on the display panel.

15. The display device according to claim 10, wherein, The optical structure is a black light-blocking lens, or the light-concentrating unit is a transparent lens, the light-filtering unit includes a black light-blocking lens, and the photosensitive sensor includes an amorphous silicon photodiode and a thin-film transistor; The cross-sectional area of ​​the black light-shielding lens in the direction parallel to the substrate is 4-10 times the area of ​​the amorphous silicon photodiode in the direction parallel to the substrate.

Images