Method for manufacturing a semiconductor device

Abstract

The present application provides a semiconductor chip manufacturing method that can sufficiently suppress formation of a conductive material on a bump formation surface even when a conductive material used to form a shielding layer is wound around the bump formation surface side of a semiconductor wafer. The method is a semiconductor device manufacturing method including the following step (A). Step (A): a step of forming a shielding layer on a semiconductor chip whose bump formation surface of a semiconductor wafer provided with a bump is protected by a protective layer formed of a cured product of a curable resin, wherein the shielding layer is formed in at least a part of a part of the semiconductor chip exposed from a sheet for covering in a state where at least either of the bump and the bump formation surface is covered with the sheet for covering.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor device. More specifically, this invention relates to a method for manufacturing a semiconductor device having a cured material having a curable resin as a protective layer. Background Technology

[0002] Conventionally, when mounting multi-pin LSI packages for MPUs, gate arrays, and other applications onto a printed circuit board, semiconductor devices with multiple electronic components typically employ convex electrodes (hereinafter referred to as "terminals") formed from eutectic solder, high-temperature solder, gold, or the like on their bonding pads. The mounting method used involves bringing these terminals face-to-face with corresponding terminals on a chip mounting substrate for fusion / diffusion bonding.

[0003] With the widespread adoption of personal computers and the ubiquity of the internet, smartphones and tablets can now connect to the internet, and the transmission of digitized images, music, photos, and text information via wireless communication technology is increasingly common. Furthermore, the proliferation of IoT (Internet of Things) has brought about innovative changes to the packaging technologies of semiconductor devices such as sensors, RFID (Radio Frequency Identifier), MEMS (Micro Electro Mechanical Systems), and wireless components, enabling smarter use in various applications such as home appliances and automobiles.

[0004] As electronic devices continue to evolve, the requirements for semiconductor devices are increasing year by year. In particular, to meet the demands for high performance, miniaturization, high integration, low power consumption, and low cost, thermal management and noise reduction have become key areas of focus.

[0005] Corresponding to such heat and noise countermeasures, methods that have been adopted include, for example, forming a shielding layer by covering a semiconductor chip having a semiconductor wafer and terminal electrodes (bumps) disposed on the semiconductor wafer with a conductive material.

[0006] Such shielding layer formation is performed with the bumps provided on the semiconductor wafer covered by a bump covering sheet (for example, see Patent Document 1).

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: International Publication No. 2020 / 032175 Summary of the Invention

[0010] The problem the invention aims to solve

[0011] However, in such existing shielding layer formation, there is a problem that the conductive material used to form the shielding layer wraps around the bump formation surface of the semiconductor wafer, causing the bump formation surface to be damaged when energized.

[0012] The present invention was made in view of the following problems, and aims to provide a method for manufacturing a semiconductor device that can sufficiently suppress the formation of conductive material on the bump formation surface even when the conductive material used to form a shielding layer is wound around the bump formation surface side of the semiconductor wafer.

[0013] Problem Solving Methods

[0014] The inventors discovered that by forming a shielding layer on a semiconductor chip in which the bump forming surface of a semiconductor wafer is covered by a resin layer formed from a cured product of a curable resin, even if a conductive material used to form the shielding layer is wound around the bump forming surface of the semiconductor wafer, the formation of conductive material on the bump forming surface can be sufficiently suppressed, thus completing the present invention.

[0015] That is, the present invention relates to the following [1] to

[15] .

[0016] [1] A method for manufacturing a semiconductor device, comprising the following step (A).

[0017] • Process (A): A process of forming a shielding layer on a semiconductor chip in which the bump forming surface of a semiconductor wafer with bumps is protected by a protective layer, wherein the protective layer is formed from a cured product of a curable resin. In this process (A), with at least one of the bumps and the bump forming surface covered by a covering sheet, a shielding layer is formed on at least a portion of the semiconductor chip exposed from the covering sheet.

[0018] [2] The method for manufacturing the semiconductor device described in [1] above further includes the following step (B).

[0019] • Process (B): After the shielding layer is formed on the semiconductor chip in process (A), the process of peeling the covering sheet from at least one of the bump and the semiconductor wafer.

[0020] [3] The manufacturing method of the semiconductor device described in [1] or [2] above further includes a step (C) of manufacturing the semiconductor chip, wherein the step (C) includes the following steps (C1) to (C3) in sequence.

[0021] • Process (C1): The process of forming a curable resin layer on the above-mentioned bump forming surface;

[0022] • Process (C2): The process of curing the above-mentioned curable resin layer to form the above-mentioned protective layer;

[0023] • Process (C3): A process of monolithizing a semiconductor wafer with the above-mentioned protective layer to obtain a semiconductor chip whose bump formation surface is protected by the above-mentioned protective layer.

[0024] [4] The method for manufacturing the semiconductor device described in [3] above, wherein the above process (C1) includes the following processes (C1-1) and (C1-3).

[0025] • Process (C1-1): A process of bonding a protective layer forming laminate having a support sheet and a curable resin layer to the protrusion forming surface with the curable resin layer as the bonding surface.

[0026] • Process (C1-3): The process of peeling the support sheet from the protective layer forming laminate to form the curable resin layer on the protrusion forming surface.

[0027] [5] The method for manufacturing the semiconductor device described in [4] above, wherein the above step (C1) further includes the following steps (C1-2).

[0028] • Process (C1-2): A process of grinding the surface of the semiconductor wafer that is opposite to the bump formation surface.

[0029] [6] The method for manufacturing a semiconductor device as described in [3] or [4] above, wherein the above step (C) further includes a step (C0) after the above step (C2).

[0030] • Process (C0): A process of grinding the surface of the semiconductor wafer that is opposite to the bump formation surface.

[0031] [7] The method for manufacturing a semiconductor device according to any one of [3] to [6] above, wherein, in the above-mentioned step (C3), the device is cut from the bump forming surface side to be monolithized.

[0032] [8] A method for manufacturing a semiconductor device according to any one of [3] to [6] above, wherein, in the above step (C3), the device is cut from the opposite side of the bump forming surface to achieve monolithic processing.

[0033] [9] The method for manufacturing the semiconductor device described in [1] or [2] above further includes a step (C') of manufacturing the semiconductor chip, wherein the step (C') includes the steps (C4) to (C8) below.

[0034] • Process (C4): A process for preparing a wafer for semiconductor chip fabrication, wherein the wafer for semiconductor chip fabrication has a groove as a predetermined dividing line formed on the bump forming surface in such a way that it does not reach the surface opposite to the bump forming surface.

[0035] • Process (C5): A process of covering the bump forming surface of the semiconductor chip fabrication wafer with the curable resin and embedding the curable resin into the groove formed on the semiconductor chip fabrication wafer.

[0036] • Process (C6): A process of grinding the surface of the wafer used for manufacturing the semiconductor chip that is opposite to the bump formation surface.

[0037] • Process (C7): The process of curing the above-mentioned curable resin to obtain a wafer for manufacturing semiconductor chips with a protective layer;

[0038] • Process (C8): A process of monolithically processing the semiconductor chip wafer with the protective layer along the predetermined dividing line to obtain a semiconductor chip whose bump forming surface and side surface are protected by the protective layer.

[0039]

[10] The method for manufacturing a semiconductor device as described in [9] above, wherein in the above-described step (C8), the device is cut from the bump forming surface side to achieve monolithic manufacturing.

[0040]

[11] The method for manufacturing a semiconductor device described in [9] above, wherein in the above-described step (C8), the device is cut from the opposite side of the bump forming surface to achieve monolithization.

[0041]

[12] The method for manufacturing a semiconductor device according to any one of [1] to

[11] above further includes the following step (E1).

[0042] • Process (E1): A process in which the semiconductor chips are placed one by one on the covering sheet to form a state in which at least one of the bumps and the bump forming surfaces is covered by the covering sheet.

[0043]

[13] The method for manufacturing a semiconductor device according to any one of [1] to

[11] above further includes the following step (E2).

[0044] • Process (E2): A process in which the semiconductor chip is placed on the cover sheet in one step to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet.

[0045]

[14] The method for manufacturing a semiconductor device according to any one of [1] to

[13] above further includes the following step (F).

[0046] • Process (F): The process of expanding the aforementioned coating wafer on which the aforementioned semiconductor chip is mounted.

[0047]

[15] The method for manufacturing a semiconductor device according to any one of [1] to

[11] above further includes the following steps (G) to (I).

[0048] • Process (G): The process of placing the above-mentioned semiconductor chip onto the expansion tape;

[0049] • Process (H): The process of expanding the expansion strip on which the above-mentioned semiconductor chip is mounted;

[0050] • Process (I): The process of transferring the semiconductor chip placed on the expanded strip to the coating wafer.

[0051] The effects of the invention

[0052] According to the present invention, a method for manufacturing a semiconductor chip can be provided that can sufficiently suppress the formation of conductive material on the bump forming surface even when the conductive material used to form a shielding layer is wound around the bump forming surface side of the semiconductor wafer. Attached Figure Description

[0053] Figure 1 This is a simplified process diagram of the manufacturing method of the semiconductor device of the present invention.

[0054] Figure 2 This is a diagram illustrating a first embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0055] Figure 3 This is a simplified cross-sectional view showing an example of a wafer with bumps.

[0056] Figure 4 This is a simplified diagram illustrating steps (C1-1) and (C1-3) in a first embodiment of the method for manufacturing a semiconductor device according to the present invention.

[0057] Figure 5A This diagram illustrates the formation of a shielding layer on the exposed portion of a semiconductor chip when the bumps and bump forming surfaces are covered by a covering sheet.

[0058] Figure 5B This figure illustrates a case where a shielding layer is formed in at least a portion of the exposed portion of a semiconductor chip when a part of the bump forming surface is covered by a covering sheet.

[0059] Figure 6The diagram is a cross-sectional view, schematically illustrating an example of a laminate for forming a coating wafer used in the manufacturing method of the semiconductor device of the present invention.

[0060] Figure 7 This is a diagram illustrating a second embodiment of the method for manufacturing a semiconductor device according to the present invention.

[0061] Figure 8 This is a diagram illustrating a summary of a third embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0062] Figure 9 This is a diagram illustrating a summary of a fourth embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0063] Figure 10 This is a top view showing an example of a semiconductor chip manufacturing wafer prepared in process (C4).

[0064] Figure 11 This is a simplified cross-sectional view showing an example of a semiconductor chip fabrication wafer prepared in process (C4).

[0065] Figure 12 This is a diagram showing an outline of process (C5).

[0066] Figure 13 This is a diagram showing the outline of processes (C6) to (C8).

[0067] Figure 14 This is a diagram illustrating a fifth embodiment of the method for manufacturing a semiconductor device according to the present invention.

[0068] Figure 15 This is a diagram illustrating a summary of a sixth embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0069] Symbol Explanation

[0070] 10. Semiconductor wafers with bumps (bumped wafers, wafers used in semiconductor chip manufacturing)

[0071] 11. Semiconductor wafers (chips)

[0072] 11a Circuit plane (bump forming plane)

[0073] 11b Back

[0074] 12 bumps

[0075] 13. Groove

[0076] 20 Curable resin layer

[0077] 20a Curing Resin

[0078] 30 Laminated body for forming protective layer

[0079] 30a support plate

[0080] 31 Supporting substrate

[0081] 32 Buffer Layer

[0082] 33 Adhesive layer

[0083] 40 protective layers

[0084] 80 tablets

[0085] 81 Laminated sheets for coating

[0086] 82 Viscoelastic layer

[0087] 83 Embedded Layer

[0088] 84 Adhesive layer

[0089] 85. Peel-off film

[0090] 86. Peel-off film

[0091] 90 shielding layers

[0092] 100 Semiconductor Chips Detailed Implementation

[0093] In this specification, "active ingredient" refers to any component in the composition intended to be used, excluding diluents such as water and organic solvents.

[0094] In addition, in this specification, "(meth)acrylic acid" refers to both "acrylic acid" and "methacrylic acid", and so do other similar terms.

[0095] In addition, in this specification, "substituted amino" refers to a group in which one or two hydrogen atoms of an amino group are replaced by a group other than hydrogen atoms.

[0096] In addition, in this specification, the weight-average molecular weight and number-average molecular weight are converted to polystyrene values ​​determined by gel permeation chromatography (GPC).

[0097] Furthermore, in this specification, the lower and upper limits of the preferred numerical ranges (e.g., the range of content, etc.) are described hierarchically and can be combined independently. For example, based on the description "preferred to be 10 to 90, more preferably 30 to 60", the "preferred lower limit (10)" and the "more preferably upper limit (60)" can be combined to obtain "10 to 60".

[0098] [Method for manufacturing a semiconductor chip according to the present invention]

[0099] Figure 1 The diagram shows a simplified process flow of the semiconductor chip manufacturing method of the present invention.

[0100] The semiconductor chip manufacturing method of the present invention preferably includes, in sequence, a semiconductor chip manufacturing process (C) (“process (C1) to (C3)”) or a process (C') (“process (C4) to (C8)”), the following process (A), and the following process (B).

[0101] • Process (A): A process of forming a shielding layer on a semiconductor chip in which the bump forming surface of a semiconductor wafer with bumps is protected by a protective layer, the protective layer being formed from a cured product of a curable resin. In this process (A), with at least one of the bumps and the bump forming surface covered by a covering sheet, a shielding layer is formed on at least a portion of the semiconductor chip exposed from the covering sheet.

[0102] • Process (B): After a shielding layer is formed on the semiconductor chip in process (A), the process of peeling the cover sheet from at least either the bump or the semiconductor wafer.

[0103] Furthermore, the following steps (E1), (E2), and (F) may be optionally introduced between step (C) or step (C') and step (A).

[0104] • Process (E1): A process in which semiconductor chips are placed one by one on a cover sheet to form bumps and at least one of the bump forming surfaces being covered by the cover sheet;

[0105] • Process (E2): A process in which a semiconductor chip is placed on a cover sheet in one step to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet;

[0106] • Process (F): The process of expanding the aforementioned coating wafer on which a semiconductor chip is mounted.

[0107] It should be noted that among the above processes, only process (A) is a necessary process, while the other processes are optional.

[0108] By employing a manufacturing method that includes the above-described steps, a semiconductor chip can be obtained in which the formation of conductive material on the bump formation surface can be sufficiently suppressed, even when the conductive material used to form a shielding layer is wound around the bump formation surface of the semiconductor wafer.

[0109] Hereinafter, each embodiment of the semiconductor chip manufacturing method of the present invention will be described in detail.

[0110] It should be noted that in the following explanation, "semiconductor chip" will also be referred to as "chip".

[0111] <First Implementation Method>

[0112] Figure 2 This is a diagram illustrating a first embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0113] In the first embodiment, such as Figure 2 As shown, the following steps are performed sequentially: (C) (C1-1, C1-2, C1-3, C2, CCX, C3)), (E1), (A), and (B).

[0114] <<Process (C)>>

[0115] Process (C) is the process of manufacturing semiconductor chips, which generally includes the following processes (C1), (C2), and (C3) in sequence.

[0116] • Process (C1): The process of forming a curable resin layer on the bump forming surface.

[0117] • Process (C2): The process of curing the resin layer to form a protective layer.

[0118] • Process (C3): The process of monolithizing a semiconductor wafer with a protective layer to obtain a semiconductor chip whose bump formation surface is protected by the protective layer.

[0119] (Process (C1))

[0120] In process (C1), a curable resin layer is formed on the bump-forming surface of the semiconductor wafer having bumps. The method for forming the curable resin layer is not particularly limited, and examples include, for instance, a method of drying after applying the curable resin composition described later to the bump-forming surface of the semiconductor wafer having bumps.

[0121] (Semiconductor wafers with bumps)

[0122] An example of a semiconductor wafer with bumps used in the manufacturing method of the semiconductor device of the present invention. Figure 3 As shown. The semiconductor wafer 10 with bumps has bumps 12 on the circuit surface 11a of the semiconductor wafer 11. There are usually multiple bumps 12.

[0123] It should be noted that in the following description, "semiconductor wafer with bumps" is also referred to as "bumped wafer" or "wafer for semiconductor chip fabrication". Furthermore, in the following description, "semiconductor wafer" is also referred to as "wafer", and "circuit surface" is also referred to as "bump forming surface".

[0124] The shape of the bump 12 is not particularly limited. As long as it can contact and be fixed with electrodes on the chip mounting substrate, it can be any shape.

[0125] For example, in Figure 3 In this design, bump 12 is spherical, but it can also be a ellipsoid of revolution. This ellipsoid of revolution can be, for example, a ellipsoid of revolution that is elongated in the vertical direction relative to the bump forming surface 11a of the wafer 11, or a ellipsoid of revolution that is elongated in the horizontal direction relative to the bump forming surface 11a of the wafer 11. Alternatively, bump 12 can also be pillar-shaped.

[0126] The height of the bump 12 is not particularly limited, for example, it is 30 to 300 μm, preferably 60 to 250 μm, and more preferably 80 to 200 μm.

[0127] It should be noted that, in this specification, "the height of bump 12" refers to the height of the part that exists at the highest position from the bump forming surface 11a when focusing on a bump.

[0128] There is no particular limit to the number of bumps 12; it can be changed appropriately according to design requirements.

[0129] Chip 11 is a semiconductor chip with circuits such as wiring, capacitors, diodes, and transistors formed on its surface. The material of the chip is not particularly limited, and examples include: silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

[0130] From the viewpoint of improving batch processing efficiency, the size of the wafer 11 is typically 8 inches (200 mm in diameter) or more, preferably 12 inches (300 mm in diameter) or more, more preferably 400 mm or more, further preferably 500 mm or more, and particularly preferably 600 mm or more. It should be noted that the shape of the wafer is not limited to a circle, and can also be square, such as a square or rectangle. In the case of a square wafer, regarding the size of the wafer 11, from the viewpoint of improving batch processing efficiency, the length of the longest side is preferably within the range of the aforementioned dimensions (diameter).

[0131] From the viewpoint of suppressing warping of the wafer 11 that occurs during the curing of the curable resin layer in the above-described process (C2), the thickness of the wafer 11 is, for example, 300 μm or more, preferably 400 μm or more, more preferably 500 μm or more, and even more preferably 600 μm or more. It should be noted that the wafer 11 is preferably not subjected to thinning processing based on back-side grinding.

[0132] The size-to-thickness ratio of the wafer 11 [wafer size (diameter) / wafer thickness] is preferably 1000 or less, more preferably 700 or less, even more preferably 500 or less, even more preferably 400 or less, and still more preferably 300 or less. In addition, the size-to-thickness ratio of the wafer 11 [wafer size (diameter) / wafer thickness] is generally 100 or more, preferably 200 or more.

[0133] Here, as an example of the semiconductor device manufacturing method of the present invention, the formation of the curable resin layer is preferably performed using a protective layer forming laminate having a laminate structure in which a support sheet and a curable resin layer are stacked.

[0134] Specifically, step (C1) preferably includes steps (C1-1) and (C1-3) below, and may further include step (C1-2) below.

[0135] • Process (C1-1): A process in which a laminated protective layer forming body, having a support sheet and a curable resin layer, is bonded to the protrusion forming surface with the curable resin layer as the bonding surface.

[0136] • Process (C1-2): A process of grinding the surface opposite to the bump forming surface while a protective layer for forming a laminate has been formed on the bump forming surface.

[0137] • Process (C1-3): The process of peeling the support sheet from the protective layer forming laminate to form a curable resin layer on the bump forming surface.

[0138] The following provides a detailed description of processes (C1-1), (C1-2), and (C1-3).

[0139] ((Process (C1-1)))

[0140] In process (C1-1), a protective layer forming laminate with a laminated structure consisting of a support sheet and a curable resin layer is bonded to the protrusion forming surface with the curable resin layer as the bonding surface.

[0141] In step (C1-1), the support sheet constituting the laminate for forming the protective layer is not particularly limited as long as it is a sheet-like component capable of supporting the curable resin layer. For example, the support sheet can be a support substrate, a release film formed by peeling off one surface of the support substrate, or a laminate having a support substrate and an adhesive layer.

[0142] When the support sheet is a release film, a curable resin layer is formed on the release-treated surface of the support substrate.

[0143] In addition, when the support sheet is a laminate of a support substrate and an adhesive layer, the curable resin layer is bonded to the adhesive layer of the support sheet.

[0144] Here, in one example of the method for manufacturing the semiconductor device of the present invention, such as Figure 4 As shown in (C1-1), the support sheet 30a preferably has a laminated structure in which the support substrate 31, the buffer layer 32, and the adhesive layer 33 are sequentially stacked. Furthermore, the protective layer forming laminate 30 preferably has a laminated structure in which the support substrate 31, the buffer layer 32, the adhesive layer 33, and the curable resin layer 20 are sequentially stacked.

[0145] When the protective layer forming laminate 30 is pressed onto the bump forming surface 11a of the bumped wafer 10 with the curable resin layer 20 as the bonding surface, the curable resin layer 20, adhesive layer 33, and buffer layer 32 of the protective layer forming laminate 30 are pressurized by the bump 12. Therefore, in the initial stage of pressing, the curable resin layer 20, adhesive layer 33, and buffer layer 32 deform into a concave shape following the shape of the bump 12. Moreover, if the pressure from the bump 12 continues, the top of the bump 12 will eventually penetrate the curable resin layer 20 and contact the support sheet 30a. At this time, the pressure applied to the bump 12 is dispersed by the adhesive layer 33 and buffer layer 32 of the support sheet 30a, thereby suppressing damage to the bump 12.

[0146] It should be noted that the bump 12 does not necessarily have to protrude toward the support sheet 30a; it can also be embedded inside the curable resin layer 20. Even in this case, the top of the bump 12 can be exposed from the protective layer through exposure treatments described later.

[0147] Here, for the support sheet used in process (C1-1) to form the laminate for forming the protective layer, good embeddability relative to the bump and easy peeling of the support sheet from the laminate for forming the protective layer in process (C1-3) are required.

[0148] In one example of the method for manufacturing the semiconductor device of the present invention, from the viewpoint of easily ensuring good embeddability with respect to the bump, the thickness of the buffer layer 32 of the support sheet 30a is preferably 100 to 500 μm, more preferably 150 to 450 μm, and even more preferably 200 to 400 μm.

[0149] From the viewpoint of maintaining the curable resin layer (adhesion) and peeling off after bonding the wafer bump surface, the thickness of the adhesive layer 33 of the support sheet 30a is preferably 5 to 50 μm, more preferably 5 to 30 μm, and even more preferably 5 to 15 μm.

[0150] It should be noted that the above process (C1-1) can be performed, for example, using a surface protection tape bonding device for back grinding ("RAD-3520F / 12" manufactured by Lintec Co., Ltd.).

[0151] ((Process (C1-2)))

[0152] In process (C1-2), the side of the bumped wafer opposite to the bump formation surface is ground. That is, the bumped wafer is ground on the back side to thin the wafer.

[0153] Here, the grinding in process (C1-2) is performed as part of process (C1), and can be carried out between process (C1-1) and process (C1-3) described below, while a protective layer laminate has been formed on the bump forming surface. Alternatively, the grinding in process (C1-2) as part of process (C1) may be omitted, and the side of the bumped wafer opposite to the bump forming surface may be ground, and this may be performed as a process (C0) after process (C2) in which a curable resin layer formed on the bump forming surface of the bumped wafer is cured to form a protective layer.

[0154] In process (C1-2), the back side grinding of the bumped wafer 10 while a protective layer for forming a laminate is formed on the bump forming surface can be performed, for example, in the following manner: Figure 4 As shown in (C1-1), the bump forming surface 11a side of the wafer 10 with bumps on which the protective layer forming laminate 30 is attached is fixed on a fixed stage (not shown) such as a chuck worktable, and the back side 11b of the wafer 11 is ground using a grinding machine (not shown) or the like.

[0155] The thickness of the bumped wafer 10 after grinding can be set to less than 250 μm.

[0156] It should be noted that the above process (C1-2) can be performed, for example, using a grinding and polishing machine (DISCO Corporation "DGP8761").

[0157] ((Process (C1-3)))

[0158] In process (C1-3), the support sheet is peeled from the protective layer forming laminate, and a curable resin layer is formed on the bump forming surface. For example, as Figure 4 As shown in (C1-3), the support sheet 30a, which has a laminated structure consisting of a support substrate 31, a buffer layer 32, and an adhesive layer 33 stacked sequentially, is peeled off from the curable resin layer 20, thereby separating it from the protective layer forming laminate 30. As a result, the curable resin layer 20 can be formed on the bump forming surface 11a of the bumped wafer 10. The surface of the curable resin layer 20 opposite to the bump forming surface 11a side becomes exposed.

[0159] However, the method of peeling the support sheet 30a from the protective layer forming laminate 30 is not limited to this method. For example, if the adhesive layer 33 is an adhesive layer formed by an energy-curing type adhesive, a heat-foaming type adhesive, or a water-swelling type adhesive, the support sheet 30a can also be peeled from the protective layer forming laminate 30 by energy-curing, heat-foaming, or water-swelling.

[0160] It should be noted that the above-mentioned processes (C1-3) can be performed, for example, using a BG tape shredder (Lintec Corporation "RAD-3010F / 12").

[0161] The bumped wafer 10, in which a curable resin layer 20 is formed on the bump forming surface 11a through the above-described process (C1) (processes (C1-1) to (C1-3)), is supplied to the subsequent process (C2).

[0162] (Process (C2))

[0163] In process (C2), a curable resin layer formed on the bump forming surface of the bumped wafer is cured to form a protective layer. By curing the curable resin layer to form a protective layer, the bump forming surface and bump neck of the bumped wafer can be protected.

[0164] The protective layer formed by curing a curable resin layer is stronger than the curable resin layer at room temperature. Therefore, by forming a protective layer, the bump forming surface and bump neck can be well protected.

[0165] The curing of the curable resin layer can be carried out by any method, including curing by heat curing and curing by energy ray irradiation, depending on the type of curable component contained in the curable resin layer.

[0166] It should be noted that, in this specification, "energy rays" refers to those electromagnetic waves or charged particle beams that contain energy quanta. Examples of such rays include ultraviolet light and electron beams, with ultraviolet light being the preferred choice.

[0167] As for the conditions for heat curing, the curing temperature is preferably 80 to 250°C and the curing time is preferably 1 to 5 hours.

[0168] The conditions for solidification based on energy ray irradiation can be appropriately set depending on the type of energy ray used.

[0169] The preferred light intensity is 50 mJ / cm². 2 Above and 2000mJ / cm 2 The following, and more preferably, is 100 mJ / cm 2 Above and 1000mJ / cm2 The following is a summary. Additionally, the preferred illuminance is 50 mW / cm². 2 Above and 500mw / cm 2 The following are examples of light sources. Other examples include high-pressure mercury lamps, metal halide lamps, xenon lamps, DeepUV lamps, and ultraviolet LEDs. The peak wavelength is preferably 180nm or higher and 420nm or lower.

[0170] In one example of the semiconductor device manufacturing method of the present invention, during the process of curing a curable resin layer to form a protective layer, from the viewpoint of improving the flatness of the protective layer by causing the curable resin layer to flow through heating during thermal curing. Furthermore, when the curable resin layer is a thermosetting resin layer, even if the curable resin layer is formed in step (C1) with the bump not completely penetrating through it but embedded within it, the top of the bump can be exposed from the protective layer by causing the curable resin to flow through heating during thermal curing. From this viewpoint, a thermosetting resin layer is also preferred.

[0171] The bumped wafer, in which the curable resin layer is cured through the above process (C2) to form a protective layer on the bump forming surface, is supplied to the subsequent process (C3).

[0172] It should be noted that in the semiconductor device manufacturing method of the present invention, when the curable resin layer is a thermosetting resin layer, the support sheet and backing tape constituting the protective layer forming laminate (e.g., a backing tape formed by sequentially stacking a support substrate, a buffer layer, and an adhesive layer) do not need to be exposed to heat during the heat treatment used to cure the thermosetting resin layer. Therefore, it is not required that the support sheet and backing tape have heat resistance relative to the heat during the curing of the thermosetting resin layer, thus having the advantage of greatly increasing the design freedom of the support sheet and backing tape.

[0173] Here, before proceeding to the next process (C3), an exposure process can also be performed to remove the protective layer covering the top of the bump or a portion of the protective layer attached to the top of the bump, thereby exposing the top of the bump. Figure 2 The process described in the text is "Process (CX)"). Furthermore, in the modified fourth embodiment described later, the re-adhesive backing tape re-attachment method (Process (C4) → Process (C5) → Process (CY) → Process (C7) → Process (C5) → Process (C6) → Process (CY) → Process (8) → Process (E1) → Process (A) → Process (B)), the aforementioned exposure treatment (Process (CX)) can be performed after Process (C7) or after the second Process (CY).

[0174] Examples of exposure treatments that expose the top of the bump include: wet etching, dry etching, and grinding.

[0175] Among the dry etching processes, examples include plasma etching (plasma cleaning). While plasma etching can also be performed at high temperatures, in such cases, the curable resin layer has already cured and formed a protective layer. Therefore, the high temperature of the plasma etching process does not cause curing shrinkage of the curable resin layer, and thus, wafer warping associated with the curing shrinkage of the curable resin layer is avoided.

[0176] It should be noted that if the top of the bump is not exposed on the surface of the protective layer, an exposure process can be performed to push the protective layer back until the top of the bump is exposed.

[0177] (Process (C3))

[0178] In process (C3), the bumped wafer with a protective layer is monolithized to obtain a semiconductor chip in which the bump formation surface is protected by the protective layer. Here, in Figure 2 In the first embodiment shown, monolithization is achieved by cutting from the protrusion forming surface side.

[0179] It should be noted that the above process (C3) can be performed, for example, by using a multi-functional wafer bonding machine (Lintec Co., Ltd. "RAD-2510F / 12") to place a wafer with a protective layer and bumps onto a dicing tape or the like.

[0180] Cutting can be carried out appropriately using existing and well-known methods such as blade cutting or laser cutting.

[0181] ((The formation of the starting point of the segmentation))

[0182] The above process (C3) may also include a process for forming a dicing start point for monolithicizing a bumped semiconductor wafer.

[0183] Methods for forming a starting point for monolithicizing a bumped semiconductor wafer include, for example, the pre-cutting method and the Stealth Dicing (registered trademark) method.

[0184] -First Cutting Method-

[0185] The pre-cutting method involves forming a groove 13 on the bump forming surface 11a of the bumped wafer 10 along a pre-divided line, and grinding the back surface 11b of the bumped wafer 10 to thin the bumped wafer 10 until at least the groove 13 is reached, thus monolithizing the bumped wafer 10.

[0186] In the pre-cutting method, the starting point for dicing the bumped wafer 10 into a single piece is the groove.

[0187] Here, the trench is preferably formed after process (C2), that is, after the protective layer 40 is formed on the bump forming surface 11a of the bumped wafer 10. At this time, the trench is preferably formed from the surface of the protective layer 40 toward the interior of the bumped wafer 10. As a result, the bumped wafer 10 with the protective layer 40 formed can be easily monolithized in the state where the protective layer has been formed.

[0188] It should be noted that after a groove is formed from the bump forming surface 11a of the bumped wafer 10 toward the interior of the wafer 10, even if a protective layer 40 is formed on the bump forming surface 11a of the bumped wafer 10, the bumped wafer 10 with the protective layer 40 formed can still be monolithically formed. That is, after thinning the bumped wafer 10 by grinding the back surface 11b of the bumped wafer 10 until at least the groove 61 is reached, by applying external force such as pressure, the protective layer 40 is cut off along with the bumped wafer 10, starting from the groove 61, thereby enabling the bumped wafer 10 with the protective layer 40 formed to be monolithically formed while still having the protective layer 40.

[0189] -Stealth Dicing Method-

[0190] Stealth cutting refers to a method that uses lasers to create modified regions inside a bumped wafer, and then uses these modified regions as the starting point to monolithize the bumped wafer.

[0191] Specifically, for the wafer 11 of the bumped wafer 10, a laser is irradiated with a focusing point aligned with the interior of the wafer, thereby forming a modified region based on multiphoton absorption as a dicing starting point. Then, using this modified region, a cutting starting point region is formed along a predetermined dicing line of the bumped wafer 10 from the laser incident surface within a given distance. After thinning the bumped wafer 10 by back-side grinding, it is cut into individual chips using processing pressure from a grinding wheel or the like, thereby achieving monolithic wafer fabrication.

[0192] When the modified region is formed before process (C1), the laser incident surface can be either the bump forming surface 11a of the bumped wafer 10 or the back surface 11b. However, from the viewpoint of suppressing the influence on circuits formed on the bump forming surface 11a of the bumped wafer 10, the laser incident surface is preferably the back surface 11b of the bumped wafer 10.

[0193] Furthermore, after process (C1), a protective layer 40 is formed on the bump-forming surface 11a of the bumped wafer 10. Sometimes, back-polishing tape or similar materials are also applied to the surface of the protective layer 40. Therefore, when a modified area is to be formed after process (C1), it is preferable that the laser incident surface be the back surface 11b of the bumped wafer 10.

[0194] <<Process (E1)>>

[0195] In process (E1), semiconductor chips are placed one by one on a cover sheet to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet.

[0196] Here, by "placing the semiconductor chips one by one on the coating wafer", the spacing between the semiconductor chips and adjacent semiconductor chips can be adjusted appropriately, thereby omitting the process (F) described later.

[0197] It should be noted that regarding "the state of being covered by the covering sheet," for example, in Figure 5A The bump 12 and the protective layer 40 formed on the bump forming surface 11a are covered by the covering sheet 80. Figure 5B The protective layer 40 formed on the protrusion forming surface 11a is partially covered by the covering sheet 80.

[0198] First, for example, such as Figure 5A As shown, the semiconductor chip 100 is pressed onto the encapsulation sheet 80 with the bump 12 side, i.e. the bump forming surface 11a, facing down, so that the bump 12 is embedded in the encapsulation sheet 80.

[0199] At this time, the semiconductor chip 100 is pressed onto the encapsulation sheet 80 in contact with the bumps 12 of the semiconductor chip 100. This causes the outermost surface of the encapsulation sheet 80 to sequentially press against the surface of the bumps 12 and the protective layer 40 formed on the bump forming surface 11a. Then, by heating the encapsulation sheet 80, it softens and unfolds between the bumps 12, covering them, thereby sealing against the protective layer 40 formed on the bump forming surface 11a and covering the surface of the bumps 12, particularly the surface near the protective layer 40 formed on the bump forming surface 11a, thus embedding the bumps 12.

[0200] It should be noted that here, regarding Figure 5A The case where the bump 12 and the protective layer 40 formed on the bump forming surface 11a are covered by the covering sheet 80 has been described, but it is not limited to this. For example, it is also possible to cover the bump 12 as shown and the protective layer 40 formed on the bump forming surface 11a as shown. Figure 5BAs shown, a portion of the protective layer 40 formed on the bump forming surface 11a is covered by the covering sheet 80, while the bump 12 is not covered by the covering sheet 80. Alternatively, a portion of the bump 12 may be covered by the covering sheet 80, while the protective layer 40 formed on the bump forming surface 11a may not be covered by the covering sheet 80.

[0201] As a method for bonding semiconductor chips to a coating sheet, known methods for bonding various sheets to an object can be used, such as using laminating rollers, vacuum laminators, etc.

[0202] The pressure used to press the semiconductor chip onto the coating wafer is not particularly limited, but is preferably 0.1 to 1.5 MPa, more preferably 0.3 to 1.3 MPa. The heating temperature is not particularly limited, but is preferably 30 to 70°C, more preferably 35 to 65°C, and even more preferably 40 to 60°C.

[0203] (Coating tablets)

[0204] As the coating sheet, double-sided tape, single-layer sheets of adhesive compositions (so-called non-carrier films), elastomers, etc. are preferred.

[0205] The laminate for forming a coating wafer is a laminate used when forming a coating wafer for a semiconductor chip, and can use known materials such as those disclosed in International Publication No. 2020 / 032175.

[0206] Figure 6 This is a schematic cross-sectional view showing an example of a laminate for forming a coating wafer used in the manufacturing method of the semiconductor device of the present invention.

[0207] exist Figure 6 In the process, the laminate 81 for forming the covering sheet has a viscoelastic layer 82 comprising an embedding layer 83 and an adhesive layer 84 as the covering sheet 80. The outermost layer on the embedding layer 83 side of the viscoelastic layer 82 further has a release film 85, and the outermost layer on the adhesive layer 84 side of the viscoelastic layer 82 further has a release film 86.

[0208] For the above-mentioned laminate for forming a coating sheet, after peeling off the release films 85 and 86 on both sides and attaching them to the support, the semiconductor chip 100 can be pressed from the side of the bump 12 from the adhesive layer 84 side of the viscoelastic layer 82, the bump 12 is embedded in the viscoelastic layer 82, and a shielding layer 90 is further formed above it.

[0209] Laminated sheets for coating are not limited to Figure 6 The method shown can also be a layered structure obtained by altering, removing, or adding to a portion of its components.

[0210] Other examples of laminates for forming a cover sheet include: (i) a laminate for forming a cover sheet comprising a release film 86, an adhesive layer 84, an embedding layer 83, and a substrate in sequence; (ii) a laminate for forming a cover sheet comprising a release film 86, an adhesive layer 84, an embedding layer 83, a substrate, a second adhesive layer (i.e., an adhesive bonding layer), and a release film in sequence; (iii) a laminate for forming a cover sheet comprising a release film 85, an adhesive layer 84, a substrate, a second adhesive layer (i.e., an adhesive bonding layer), and a release film in sequence; (iv) a laminate for forming a cover sheet comprising a release film 85, an adhesive layer 84, and a release film 86 in sequence; and (v) a laminate for forming a cover sheet comprising a release film 85, an embedding layer 83, and a release film 86 in sequence.

[0211] The laminate for forming the covering sheet described above (i) includes a viscoelastic layer 82 comprising an adhesive layer 84 and an embedding layer 83 as a covering sheet 80, and further includes a release film 86 on the outermost layer on the adhesive layer 84 side of the viscoelastic layer 82, and further includes a substrate on the embedding layer 83 side of the viscoelastic layer 82.

[0212] For the laminate for forming the coating sheet described above (i), the release film 86 can be peeled off, so that the semiconductor chip 100 is pressed from the bump 12 side to the embedding layer 83 side of the viscoelastic layer 82, the bump 12 is embedded in the viscoelastic layer 82, and a shielding layer 90 is further formed above it.

[0213] The laminate for forming the covering sheet described in (ii) above includes a viscoelastic layer 82 comprising an adhesive layer 84 and an embedding layer 83 as a covering sheet 80, and further includes a release film 86 on the adhesive layer 84 side of the viscoelastic layer 82, a substrate on the embedding layer 83 side of the viscoelastic layer 82, a second adhesive layer (i.e., an adhesive bonding layer) on the opposite side of the substrate from the embedding layer 83, and further includes a release film.

[0214] For the laminate for forming the encapsulation sheet described in (ii) above, the release film can be peeled off and fixed to other supports (not shown), and then the release film 86 can be peeled off, so that the semiconductor chip 100 is pressed onto the viscoelastic layer 82 from the bump 12 side, the bump 12 is embedded in the viscoelastic layer 82, and a shielding layer 90 is further formed above it.

[0215] For details of the layers constituting the laminate for forming the covering sheet, see International Publication No. 2020 / 032175.

[0216] <<Process (A)>>

[0217] In process (A), a shielding layer is formed on a semiconductor chip in which the bump forming surface of a semiconductor wafer with bumps is protected by a protective layer formed by a cured product of a curable resin, wherein, in a state where at least one of the bumps and the bump forming surface is covered by a covering sheet, a shielding layer is formed on at least a portion of the semiconductor chip exposed from the covering sheet.

[0218] A shielding layer made of conductive material is formed by coating at least a portion of the exposed portion of a semiconductor chip from the coating wafer with a conductive resin and then subjecting it to thermal curing. Other methods for forming the shielding layer using a conductive material include sputtering, ion plating, and spraying.

[0219] (Conductive resin (conductive material))

[0220] There are no special limitations on conductive resins (conductive materials). Examples include copper, nickel, titanium, silver, tin, and their alloys and coatings. These conductive resins (conductive materials) can be used alone or in combination of two or more.

[0221] From the perspective of reliability and mass production, copper, nickel, and silver are preferred.

[0222] <<Process (B)>>

[0223] In process (B), after a shielding layer is formed on the semiconductor chip, the covering sheet is peeled off from at least either the bump or the semiconductor wafer.

[0224] For example, by picking up the shielded semiconductor chip from the coating sheet, the coating sheet can be peeled off from at least either the bump or the semiconductor wafer, thereby removing the semiconductor chip covered by the shielding layer.

[0225] In the first embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0226] Furthermore, in the first embodiment, since the bump forming surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. Furthermore, it is easier to peel the coating sheet from the bumped wafer, and residual adhesive can be suppressed during peeling.

[0227] <Second Implementation Method>

[0228] Figure 7 A simplified diagram of the second embodiment is shown.

[0229] In the second embodiment, such as Figure 7 As shown, the following steps are performed sequentially: (C) (C1-1, C1-2, C1-3, C2, CCX, C3)), (E2), (F), (A), and (B).

[0230] The second embodiment differs from the first embodiment in that it performs steps (E2) and (F) instead of the aforementioned step (E1).

[0231] The following is a detailed description of the differences from the first embodiment (process (E2) and process (F)).

[0232] <<Process (E2)>>

[0233] In process (E2), a semiconductor chip is placed on a cover sheet in one step to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet.

[0234] Process (E2) can be performed in the same way as process (E1), except that it can place semiconductor chips all at once instead of placing them one by one.

[0235] <<Process (F)>>

[0236] In process (F), the aforementioned coating sheet on which the semiconductor chip is mounted is expanded. Here, the coating sheet can be expanded along the arrangement direction of the semiconductor chip, or the coating sheet can be expanded radially.

[0237] By expanding the aforementioned covering sheet on which the semiconductor chips are mounted in this way, the desired spacing can be achieved even when the spacing between the semiconductor chips is narrow.

[0238] It should be noted that the expansion of the coating sheet can be achieved, for example, using a sheet expansion device.

[0239] Alternatively, the above-mentioned steps (E2) and (F) can be substituted, or the following steps (G) to (I) can be performed in addition to the above-mentioned steps (E2) and (F). Here, in the following step (H), the expansion strip can be expanded along the arrangement direction of the semiconductor chip, or the expansion strip can be expanded radially.

[0240] • Process (G): The process of placing a semiconductor chip on an expansion tape.

[0241] • Process (H): The process of expanding the expansion strip on which the semiconductor chip is mounted.

[0242] • Process (I): The process of transferring the semiconductor chip placed on the expanded tape to the coating wafer.

[0243] Here, as an expansion strip, a known expansion strip, such as the wafer processing strip described in International Publication No. 2018 / 003312, can be used.

[0244] In the second embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0245] Furthermore, in the second embodiment, since the bump forming surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. In addition, it is easier to peel the coating sheet from the bumped wafer, and residual adhesive can be suppressed during peeling.

[0246] <Third Implementation Method>

[0247] Figure 8 A simplified diagram of the third embodiment is shown.

[0248] In the third embodiment, such as Figure 8 As shown, the following steps are performed sequentially: (C) (C1-1, C1-2, C1-3, C2, CCX, C3)), (F), (A), and (B).

[0249] The third embodiment differs from the second embodiment in that it does not perform the above-described process (E2) and the process (C3) in process (C) is different.

[0250] The following is a detailed description of the differences from the second embodiment (step (C3)).

[0251] (Process (C3))

[0252] In process (C3), the bumped wafer with a protective layer is cut off from the opposite side of the bump formation surface to be monolithized, thereby obtaining a semiconductor chip with the bump formation surface protected by the protective layer.

[0253] Cutting can be carried out appropriately using existing and well-known methods such as blade cutting or laser cutting.

[0254] The third embodiment's process (C3) can be performed in the same way as the second embodiment's process (C3) (i.e., the first embodiment's process (C3)), except that instead of cutting the bumped wafer with a protective layer from the side of the bump formation surface for monolithic assembly, the process is cut from the opposite side of the bump formation surface.

[0255] By placing a bumped wafer with a protective layer on a cover sheet and then cutting the bumped wafer with the protective layer from the opposite side of the bump formation surface to achieve monolithic wafer formation, the process of transferring semiconductor chips (process (E2)) can be omitted.

[0256] In the third embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0257] Furthermore, in the third embodiment, the material can be cut and expanded while in contact with the cutting strip until the shielding layer is formed.

[0258] In addition, in the third embodiment, process (E2) can be omitted, thus improving productivity.

[0259] Furthermore, in the third embodiment, since the bump formation surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. Furthermore, it is easier to peel the coating sheet from the bumped wafer, and residual adhesive can be suppressed during peeling.

[0260] <Fourth Implementation Method>

[0261] Figure 9 A simplified diagram of the fourth embodiment is shown.

[0262] In the fourth embodiment, such as Figure 9 As shown, the following steps are performed: (C') (C4, C5, C6, CY, C7, CX, C8)), (E1), (A), and (B).

[0263] The fourth embodiment differs from the first embodiment in that it performs steps (C4) to (C8) in step (C') instead of steps (C1) to (C3) in the above-described steps (C).

[0264] The following is a detailed description of the differences between the first embodiment (processes (C4) to (C8)).

[0265] It should be noted that processes (C4) to (C8) are usually performed in the order of process (C4), process (C5), process (C6), process (C7), and process (C8), but the order can be changed appropriately. For example, the order of process (C7) and process (C8) can be swapped.

[0266] (Process (C4))

[0267] An example of a semiconductor wafer prepared in process (C4) is shown in the top view below. Figure 10 As shown, the simplified cross-sectional diagram is as follows: Figure 11 As shown.

[0268] In process (C4), a semiconductor wafer (semiconductor chip fabrication wafer) 10 with bumps is prepared. The semiconductor wafer (semiconductor chip fabrication wafer) 10 has a groove 13 as a predetermined dividing line on the bump forming surface 11a of the semiconductor wafer 11 having a bump forming surface 11a on which bumps 12 are provided, in such a way that it does not reach the back surface 11b which is opposite to the bump forming surface 11a.

[0269] It should be noted that, in Figure 10 The diagram of the bumps has been omitted.

[0270] The bump 12 and semiconductor wafer 11 are the same as those described in the first embodiment.

[0271] In process (C4), the bump forming surface 11a of the semiconductor chip fabrication wafer 10, which serves as a predetermined dividing line for monolithicizing the semiconductor chip fabrication wafer 10, is formed with a plurality of grooves 13 in a grid pattern. The plurality of grooves 13 are dicing grooves formed during the dicing before grinding process, and are formed at a depth shallower than the thickness of the wafer 11, so that the deepest part of the grooves 13 does not reach the back surface 11b of the wafer 11. The plurality of grooves 13 can be formed by cutting using a conventionally known wafer cutting apparatus equipped with a dicing blade (e.g., a dicing machine (DISCO Corporation "DFD6361")).

[0272] It should be noted that the multiple slots 13 can be formed in a manner that allows the manufactured semiconductor chip to achieve the desired size and shape, or they may not need to be formed in this way. Figure 10 The grooves 13 are formed in a grid pattern as shown. Furthermore, the size of a semiconductor chip is typically around 0.5mm × 0.5mm to 1.0mm × 1.0mm, but this size is not limited.

[0273] From the viewpoint of ensuring good embeddability of the cured resin 20a, the width of the groove 13 is preferably 10 to 2,000 μm, more preferably 50 to 1,000 μm, further preferably 100 to 500 μm, and even more preferably 100 to 300 μm.

[0274] The depth of the groove 13 can be adjusted according to the thickness of the wafer used and the required chip thickness, preferably 30 to 700 μm, more preferably 60 to 600 μm, and even more preferably 100 to 500 μm.

[0275] The semiconductor chip wafer 10 prepared in process (C4) is supplied to process (C5).

[0276] (Process (C5))

[0277] The summary of process (C5) is as follows: Figure 12 As shown.

[0278] In process (C5), a protective layer forming laminate 30 having a laminated structure consisting of a support sheet 30a and a curable resin 20a is pressed and bonded to the bump forming surface 11a of a wafer 10 for semiconductor chip fabrication with the aforementioned layer 20 as the bonding surface.

[0279] Therefore, as Figure 12 As shown, the bump forming surface 11a of the semiconductor chip fabrication wafer 10 is coated with a curable resin 20a, and the curable resin 20a is embedded in the groove 13 formed in the semiconductor chip fabrication wafer 10.

[0280] By embedding the curable resin 20a into the groove 13 formed in the semiconductor chip fabrication wafer 10, the portion that becomes the side of the semiconductor chip when the semiconductor chip fabrication wafer 10 is monolithized in process (C8) can be coated with the curable resin 20a. That is, while improving the strength of the semiconductor chip, process (C5) forms a coating that is necessary for preventing the protective layer 40 from peeling off and will become a precursor for coating the side of the semiconductor chip.

[0281] It should be noted that, from the viewpoint of ensuring good embedding of the curable resin 20a into the groove 13, the pressing pressure when attaching the protective layer forming laminate 30 to the semiconductor chip manufacturing wafer 10 is preferably 1 to 200 kPa, more preferably 5 to 150 kPa, and even more preferably 10 to 100 kPa.

[0282] It should be noted that the pressing pressure when bonding the protective layer forming laminate 30 to the semiconductor chip fabrication wafer 10 can be appropriately varied from the initial stage to the final stage of bonding. For example, from the viewpoint of improving the embedding of the curable resin 20a into the groove 13, it is preferable to set the pressing pressure at the initial stage of bonding to be low and gradually increase the pressing pressure.

[0283] Furthermore, when the protective layer laminate 30 is bonded to the semiconductor chip fabrication wafer 10, if the curable resin 20a is a thermosetting resin, heating is preferable from the viewpoint of improving the embedding of the curable resin 20a into the groove 13. When the curable resin 20a is a thermosetting resin, its fluidity temporarily increases due to heating, and it cures upon continued heating. Therefore, by heating within the range of increased fluidity of the curable resin 20a, it is easier for the curable resin 20a to spread throughout the groove 13, thereby further improving its embedding into the groove 13.

[0284] The specific heating temperature (bonding temperature) is preferably 50–150°C, more preferably 60–130°C, and even more preferably 70–110°C.

[0285] It should be noted that the heat treatment performed on the curing resin 20a is not included in the curing treatment of the curing resin 20a.

[0286] Furthermore, when attaching the protective layer laminate 30 to the semiconductor chip fabrication wafer 10, it is preferable to perform the process under reduced pressure. This creates a negative pressure in the groove 13, facilitating the distribution of the curable resin 20a throughout the groove 13. As a result, the embedding of the curable resin 20a into the groove 13 becomes more effective. Specifically, the pressure of the reduced pressure environment is preferably 0.001–50 kPa, more preferably 0.01–5 kPa, and even more preferably 0.05–1 kPa.

[0287] Furthermore, from the viewpoint of making the curable resin 20a more embeddable into the groove 13, the thickness of the layer 20 of the curable resin 20a in the protective layer forming laminate 30 is preferably greater than 30 μm and less than 200 μm, more preferably 60 to 150 μm, and even more preferably 80 to 130 μm.

[0288] Here, the support sheet 30a of the protective layer forming laminate 30 preferably functions as a backing tape while supporting the curable resin 20a.

[0289] At this time, when the back side 11b of the wafer 11 is ground while the protective layer forming laminate 30 is attached, the support sheet 30a functions as a back grinding tape, making the back grinding process easier to implement.

[0290] It should be noted that the above process (C5) can be performed, for example, using a surface protective tape bonding device for back grinding ("RAD-3520F / 12" manufactured by Lintec Corporation).

[0291] (Process (C6), (CY))

[0292] Figure 13 A simplified diagram of the relevant processes (C6) to (C8) is shown.

[0293] In process (C6), such as Figure 13 As shown in (1-a), the back surface 11b of the semiconductor chip fabrication wafer 10, opposite to the bump formation surface 11a, is ground while the protective layer forming laminate 30 is attached. Next, in process (CY), as... Figure 13 As shown in (1-b), the support sheet 30a is peeled off from the protective layer forming laminate 30.

[0294] When grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, the grinding amount is only enough to expose the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10. However, it is also possible to further grind the wafer 10 and grind the curable resin 20a embedded in the groove 13 at the same time.

[0295] In the fourth embodiment, the support sheet 30a is peeled off in the process (CY) preceding process (C7). Therefore, even if the curable resin 20a is a thermosetting resin and a heat treatment for curing is performed in process (C7), heat resistance is not required for the support sheet 30a. As a result, the design freedom of the support sheet 30a is increased.

[0296] It should be noted that the above process (C6) can be performed, for example, using a grinding and polishing machine (DISCO Corporation "DGP8761").

[0297] Alternatively, the above process (CY) can be performed, for example, using a BG tape shredder (Lintec Corporation "RAD-3010F / 12").

[0298] (Process (C7))

[0299] In process (C7), specifically, such as Figure 13As shown in (1-c), the curable resin 20a is cured to obtain a wafer 10 for manufacturing semiconductor chips with a protective layer 40.

[0300] The protective layer 40 formed by curing the curable resin 20a is stronger than the curable resin 20a at room temperature. Therefore, by forming the protective layer 40, the neck of the bump can be well protected. Furthermore, in Figure 13 In process (C8) shown in (1-d), by monolithically fabricating the semiconductor chip wafer 10 with the protective layer 40, a semiconductor chip with the protective layer 40 also covering its sides can be obtained, thereby obtaining a semiconductor chip with excellent strength. Moreover, the peeling of the protective layer 40 can be suppressed.

[0301] The curing of the curable resin 20a can be carried out by any method, including heat curing and curing based on energy ray irradiation, depending on the type of curable component contained in the curable resin 20a.

[0302] It should be noted that, in this specification, "energy rays" refers to electromagnetic waves or charged particle beams that contain energy quanta. Examples include ultraviolet light and electron beams, with ultraviolet light being preferred.

[0303] As for the conditions for heat curing, the curing temperature is preferably 90 to 200°C, and the curing time is preferably 1 to 3 hours.

[0304] The conditions for curing based on energy ray irradiation can be appropriately set depending on the type of energy ray used. For example, when using ultraviolet light, the irradiance is preferably 170–250 mw / cm². 2 The optimal light intensity is 300–3,000 mJ / cm². 2 .

[0305] Here, in the process of curing the curable resin 20a to form the protective layer 40, from the viewpoint of removing air bubbles and the like that sometimes get mixed in when the curable resin 20a is embedded in the groove 13 in step (C5), the curable resin 20a is preferably a thermosetting resin. That is, when the curable resin 20a is a thermosetting resin, the curable resin 20a will temporarily increase in fluidity due to heating, and will cure by continuing to heat. By utilizing this phenomenon, not only can air bubbles and the like that sometimes get mixed in when the curable resin 20a is embedded in the groove 13 be removed when the fluidity of the curable resin 20a increases, thereby achieving a better embedding property of the curable resin 20a into the groove 13, but the curable resin 20a can also be cured.

[0306] Furthermore, from the viewpoint of shortening the curing time, the curable resin 20a is preferably an energy ray curable resin.

[0307] It should be noted that details regarding the curable resin 20a used to form the protective layer 40 are described below.

[0308] (Process (C8))

[0309] In process (C8), specifically, such as Figure 13 As shown in (1-d), the portion of the protective layer 40 formed in the groove of the semiconductor chip fabrication wafer 10 with the protective layer 40 is cut along a predetermined dividing line from the bump forming surface side, thereby achieving monolithization. Here, in process (C8), the cutting is performed from the bump forming surface side, but monolithization can also be performed by cutting from the opposite side of the bump forming surface.

[0310] Cutting can be carried out appropriately using existing and well-known methods such as blade cutting or laser cutting.

[0311] Thus, a semiconductor chip 100 can be obtained in which at least the bump forming surface 11a and the side surface are covered by the protective layer 40.

[0312] The semiconductor chip 100 exhibits excellent strength because its bump forming surface 11a and side surfaces are covered by the protective layer 40. Furthermore, since the bump forming surface 11a and side surfaces are covered by the protective layer 40, the interface between the bump forming surface 11a and the protective layer 40 is not exposed on the side surface of the semiconductor chip 100. Any exposed portion at the interface between the bump forming surface 11a and the protective layer 40 on the side surface of the semiconductor chip 100 could easily become the starting point for film delamination. However, since the semiconductor chip 100 does not have such an exposed portion, film delamination from this exposed portion is less likely to occur during and after the manufacturing process of the semiconductor chip 100 by cutting the wafer 10 for semiconductor chip fabrication. Therefore, a semiconductor chip 100 with suppressed delamination of the protective layer 40 can be obtained.

[0313] It should be noted that in process (C8), when cutting the portion of the protective layer 40 formed in the groove of the semiconductor chip wafer 10 with the protective layer 40 along the predetermined dividing line, the protective layer 40 is preferably transparent. By making the protective layer 40 transparent, the semiconductor wafer 11 can be observed through it, thus ensuring the visual legibility of the predetermined dividing line. As a result, cutting along the predetermined dividing line is easy.

[0314] It should be noted that the above process (C8) can be performed, for example, by using a multi-functional wafer bonding machine (Lintec Co., Ltd. "RAD-2510F / 12"), by placing the semiconductor chip fabrication wafer 10 with a protective layer formed on a dicing tape.

[0315] Next, the protective layer forming laminate 30 used in the fourth embodiment of the semiconductor device manufacturing method of the present invention will be described. It should be noted that the protective layer forming laminate 30 may also be used in embodiments other than the fourth embodiment.

[0316] (Composition of the laminate 30 for forming the protective layer)

[0317] In the fourth embodiment of the semiconductor device manufacturing method of the present invention, the protective layer forming laminate 30 has a layer 20 of curable resin 20a on one side of the support sheet 30a. By providing the layer 20 of curable resin 20a on one side of the support sheet 30a, the layer 20 of curable resin 20a can be stably supported / protected when the layer 20 of curable resin 20a is transported during the fabrication of a product package or during the transport of the layer 20 of curable resin 20a in a process.

[0318] Furthermore, a specific example of the structure of the laminate 30 for forming the protective layer is shown below.

[0319] The protective layer forming laminate 30 includes a support sheet 30a and a layer 20 of curable resin 20a formed on one side of the support sheet 30a.

[0320] Alternatively, in the protective layer forming laminate 30, the support sheet 30a may be an adhesive sheet formed by laminating a support substrate 31 and an adhesive layer 33, and the adhesive layer 33 of the adhesive sheet is bonded to the layer 20 of the curable resin 20a.

[0321] Furthermore, in the protective layer forming laminate 30, the support sheet 30a may be an adhesive sheet formed by sequentially stacking a support substrate 31, a buffer layer 32 (intermediate layer), and an adhesive layer 33, with the adhesive layer 33 of the adhesive sheet bonded to the layer 20 of the curable resin 20a. The adhesive sheet formed by sequentially stacking the support substrate 31, the buffer layer 32 (intermediate layer), and the adhesive layer 33 can be suitable as a back-abrasion tape. That is, since the protective layer forming laminate 30 has a back-abrasion tape as the support sheet 30a, it can be suitable for use when the back side of the semiconductor chip wafer is thinned by grinding after bonding the layer 20 of the curable resin 20a of the protective layer forming laminate 30 to the bump forming surface of the semiconductor chip wafer.

[0322] The following describes the curable resin 20a and the support sheet 30a used in the laminate 30 for forming the protective layer.

[0323] -Curing Resin 20a-

[0324] The curable resin 20a is a film-like resin used to coat the bump-forming surface of a wafer for semiconductor chip fabrication and to fill the grooves formed on the wafer for semiconductor chip fabrication. It forms a protective layer 40 by curing based on heating or energy ray irradiation. That is, the curable resin 20a can be a thermosetting resin film (20a-1) that cures by heating, or an energy ray curable resin film (20a-2) that cures by irradiation with energy rays.

[0325] The physical properties of the curing resin 20a can be adjusted by adjusting any one or both of the types and amounts of the components contained in the curing resin 20a.

[0326] The following description addresses thermosetting resin films (20a-1) and energy-curable resin films (20a-2).

[0327] --Thermosetting resin film (20a-1)--

[0328] The thermosetting resin film (20a-1) contains a polymer component (A) and a thermosetting component (B).

[0329] The thermosetting resin film (20a-1) may be formed, for example, from a thermosetting resin composition (20a-1-1) containing a polymer component (A) and a thermosetting component (B).

[0330] Polymer component (A) can be considered as a component that can be formed by a polymerization reaction of polymerizable compounds. Additionally, thermosetting component (B) is a component capable of undergoing a curing (polymerization) reaction triggered by heat. It should be noted that this curing (polymerization) reaction also includes condensation polymerization.

[0331] It should be noted that in the following descriptions in this specification, "the content of each component in the total amount of the effective components of the thermosetting resin composition (20a-1-1)" is synonymous with "the content of each component in the thermosetting resin film (20a-1) formed by the thermosetting resin composition (20a-1-1)".

[0332] ---Polymer Component (A)---

[0333] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain a polymer component (A).

[0334] Polymer component (A) is a polymer compound used to impart film-forming properties, flexibility, etc., to the thermosetting resin film (20a-1). Polymer component (A) can be used alone or in combination of two or more. When two or more polymer components (A) are used in combination, their combination and ratio can be arbitrarily selected.

[0335] Examples of polymer components (A) include: acrylic resins (resins having (meth)acryloyl groups), polyesters, urethane resins (resins having urethane bonds), acrylate urethane resins, silicone resins (resins having siloxane bonds), rubber resins (resins having a rubber structure), phenoxy resins, and thermosetting polyimides, etc.

[0336] Among these, acrylic resins are preferred.

[0337] As acrylic resins, well-known acrylic polymers can be cited as examples.

[0338] The weight-average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, and even more preferably 500,000 to 1,000,000.

[0339] By setting the weight-average molecular weight of the acrylic resin above the aforementioned lower limit, the shape stability (time-dependent stability during storage) of the thermosetting resin film (20a-1) is easily improved. Furthermore, by setting the weight-average molecular weight of the acrylic resin below the aforementioned upper limit, the thermosetting resin film (20a-1) easily follows the uneven surface of the adherend, for example, easily suppressing the formation of pores between the adherend and the thermosetting resin film (20a-1). Therefore, not only is the coverage of the bump formation surface 11a of the semiconductor wafer 11 undoubtedly improved, but the embedding capability into the trench 13 is also easily improved.

[0340] The glass transition temperature (Tg) of acrylic resins is preferably -60 to 70°C, more preferably -40 to 50°C, and even more preferably -30°C to 30°C.

[0341] By setting the glass transition temperature (Tg) of the acrylic resin above the aforementioned lower limit, the adhesion between the protective layer 40 and the support sheet 30a is suppressed, thereby improving the peelability of the support sheet 30a. Furthermore, by setting the glass transition temperature (Tg) of the acrylic resin below the aforementioned upper limit, the adhesion between the thermosetting resin film (20a-1) and the protective layer 40 and the adhered object is improved. Therefore, it is easier to suppress the film peeling off the protective layer 40.

[0342] Examples of acrylic resins include polymers of one or more (meth)acrylates; copolymers of two or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethylacrylamide.

[0343] Examples of (meth)acrylates constituting acrylic resins include: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, sec-butyl methacrylate, tert-butyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, n-nonyl methacrylate, and isononyl methacrylate. Alkyl esters, such as decyl methacrylate, undecyl methacrylate, dodecyl methacrylate (laurate methacrylate), tridecyl methacrylate, tetradecyl methacrylate (myristyl methacrylate), pentadecyl methacrylate, hexadecyl methacrylate (palmitoyl methacrylate), heptadecanyl methacrylate, and octadecyl methacrylate (stearyl methacrylate), have alkyl groups that form a chain structure with 1 to 18 carbon atoms.

[0344] Isoborneol ester (meth)acrylate and dicyclopentyl ester (meth)acrylate, etc. (meth)acrylate cycloalkyl esters;

[0345] (Meth)benzyl acrylate and other (meth)acrylate aralkyl esters;

[0346] (Meth)acrylate dicyclopentenyl ester and other (meth)acrylate cycloalkenyl esters;

[0347] (Meth)acrylate dicyclopentenoxyethyl ester and other (meth)acrylate cyclopentenoxyalkyl esters;

[0348] (methyl)acrylimide;

[0349] glycidyl acrylate and other glycidyl acrylates containing glycidyl group;

[0350] Hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, and 4-hydroxybutyl methacrylate are hydroxy(meth)acrylates.

[0351] (Meth)acrylates containing substituted amino groups, such as N-methylaminoethyl methacrylate; etc.

[0352] Among these, the alkyl group constituting the alkyl ester is preferably a copolymer composed of a (meth)acrylate with a chain structure having 1 to 18 carbon atoms, a glycidyl (meth)acrylate, and a hydroxyl (meth)acrylate; more preferably a copolymer composed of a (meth)acrylate with a chain structure having 1 to 4 carbon atoms, a glycidyl (meth)acrylate, and a hydroxyl (meth)acrylate; and even more preferably a copolymer composed of butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate.

[0353] Acrylic resins can also be resins made by copolymerizing, for example, one or more monomers selected from (meth)acrylate, itaconic acid, vinyl acetate, acrylonitrile, styrene and N-hydroxymethylacrylamide, other than (meth)acrylate.

[0354] The monomers that make up acrylic resins can be a single type or two or more types. When there are two or more monomers that make up acrylic resins, their combination and ratio can be chosen arbitrarily.

[0355] Acrylic resins can also have functional groups such as vinyl, (meth)acryloyl, amino, hydroxyl, carboxyl, and isocyanate groups that can bond with other compounds.

[0356] The aforementioned functional groups of acrylic resins can be bonded to other compounds via a crosslinking agent (F) described later, or they can be directly bonded to other compounds without the crosslinking agent (F). By bonding acrylic resins to other compounds via the aforementioned functional groups, there is a tendency to improve the reliability of the encapsulation obtained using a thermosetting resin film (20a-1).

[0357] Here, in one example of the method for manufacturing the semiconductor device of the present invention, as the polymer component (A), a thermoplastic resin other than an acrylic resin (hereinafter also simply referred to as "thermoplastic resin") may be used alone instead of an acrylic resin, or it may be used in combination with an acrylic resin.

[0358] By using thermoplastic resin, the peelability of the protective layer 40 from the support sheet 30a can sometimes be improved, or the thermosetting resin film (20a-1) can more easily follow the uneven surface of the adhered object, thereby further suppressing the formation of pores between the adhered object and the thermosetting resin film (20a-1). Therefore, not only will the coverage of the bump forming surface 11a of the semiconductor wafer 11 be improved, but the embedding into the groove 13 will also be easier to improve.

[0359] The weight-average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

[0360] The glass transition temperature (Tg) of the above-mentioned thermoplastic resin is preferably -30 to 150°C, more preferably -20 to 120°C.

[0361] Examples of thermoplastic resins include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

[0362] Thermoplastic resins can be used alone or in combination of two or more. When there are two or more thermoplastic resins, their combination and ratio can be chosen arbitrarily.

[0363] Based on the total amount of the active ingredients in the thermosetting resin composition (20a-1-1), the content of polymer component (A) is preferably 5 to 85% by mass, more preferably 5 to 80% by mass.

[0364] Polymer component (A) sometimes also belongs to thermosetting component (B). In this invention, when the thermosetting resin composition (20a-1-1) contains both polymer component (A) and thermosetting component (B), it is considered that the thermosetting resin composition (20a-1-1) contains both polymer component (A) and thermosetting component (B).

[0365] ---Thermosetting component (B)---

[0366] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain a thermosetting component (B).

[0367] Thermosetting component (B) is a component used to cure the thermosetting resin film (20a-1) to form a hard protective layer 40.

[0368] Thermosetting component (B) can be used alone or in combination of two or more. When there are two or more thermosetting components (B), their combination and ratio can be chosen arbitrarily.

[0369] Examples of thermosetting components (B) include epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, epoxy thermosetting resins are preferred.

[0370] Epoxy thermosetting resins include epoxy resin (B1) and thermosetting agent (B2).

[0371] Epoxy thermosetting resins can be used alone or in combination of two or more. When there are two or more epoxy thermosetting resins, their combination and ratio can be chosen arbitrarily.

[0372] ·Epoxy resin (B1)

[0373] As for epoxy resin (B1), known epoxy resins can be listed, such as: multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrides, o-cresol phenolic varnish epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and other epoxy compounds with more than one function.

[0374] Among these, multifunctional epoxy resins, dicyclopentadiene-type epoxy resins, and bisphenol F-type epoxy resins are preferred. Furthermore, among multifunctional epoxy resins, multifunctional aromatic epoxy resins are preferred.

[0375] As the epoxy resin (B1), an epoxy resin with unsaturated hydrocarbon groups can be used. Compared to epoxy resins without unsaturated hydrocarbon groups, epoxy resins with unsaturated hydrocarbon groups have higher compatibility with acrylic resins. Therefore, by using an epoxy resin with unsaturated hydrocarbon groups, the reliability of the encapsulation obtained using a thermosetting resin film (20a-1) is improved.

[0376] Examples of epoxy resins containing unsaturated hydrocarbon groups include compounds formed by converting a portion of the epoxy groups in a multifunctional epoxy resin into groups containing unsaturated hydrocarbon groups. Such compounds can be obtained, for example, by reacting (meth)acrylic acid or a derivative thereof with respect to the epoxy groups via an addition reaction.

[0377] In addition, examples of epoxy resins having unsaturated hydrocarbon groups include compounds in which groups having unsaturated hydrocarbon groups are directly bonded to the aromatic rings that constitute the epoxy resin.

[0378] Unsaturated hydrocarbon groups are unsaturated groups that can polymerize. Specific examples include vinyl, 2-propenyl (allyl), (meth)acryloyl, and (meth)acrylamido. Acryloyl is preferred.

[0379] The number-average molecular weight of the epoxy resin (B1) is not particularly limited, but from the viewpoint of curability of the thermosetting resin film (20a-1) and strength and heat resistance of the cured protective layer 40, it is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000.

[0380] The epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, more preferably 300 to 800 g / eq.

[0381] Epoxy resin (B1) can be used alone or in combination with two or more other epoxy resins. When using two or more epoxy resins (B1) in combination, their combination and ratio can be chosen arbitrarily.

[0382] • Thermosetting agent (B2)

[0383] The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).

[0384] Examples of thermosetting agents (B2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by acid anhydride conversion of acid groups, preferably phenolic hydroxyl groups, amino groups, or groups formed by acid anhydride conversion of acid groups, and more preferably phenolic hydroxyl groups or amino groups.

[0385] Examples of phenolic curing agents with phenolic hydroxyl groups in thermosetting agents (B2) include: polyfunctional phenolic resins, biphenol, phenolic varnish-type phenolic resins, dicyclopentadiene phenolic resins, and arylalkyl phenolic resins.

[0386] Examples of amine curing agents containing amino groups in thermosetting agents (B2) include dicyandiamide (hereinafter sometimes abbreviated as "DICY").

[0387] Among these, phenolic curing agents with phenolic hydroxyl groups are preferred, and phenolic resins of the varnish type are even more preferred.

[0388] Thermosetting agents (B2) can also have unsaturated hydrocarbon groups.

[0389] Examples of thermosetting agents (B2) containing unsaturated hydrocarbon groups include compounds in which a portion of the hydroxyl groups of a phenolic resin is replaced by a group containing an unsaturated hydrocarbon group, or compounds in which a group containing an unsaturated hydrocarbon group is directly bonded to the aromatic ring of a phenolic resin. The unsaturated hydrocarbon group in thermosetting agent (B2) is the same group as the unsaturated hydrocarbon group in the epoxy resin containing the unsaturated hydrocarbon group described above.

[0390] When using a phenolic curing agent as a thermosetting agent (B2), from the viewpoint of easily improving the peelability of the protective layer 40 from the support sheet 30a, it is preferable that the thermosetting agent (B2) has a high softening point or glass transition temperature.

[0391] The number average molecular weight of resin components such as polyfunctional phenolic resin, phenolic varnish-type phenolic resin, dicyclopentadiene phenolic resin, and aralkyl phenolic resin in the thermosetting agent (B2) is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000.

[0392] The molecular weight of non-resin components such as biphenol and dicyandiamide in the thermosetting agent (B2) is not particularly limited, but is preferably 60 to 500.

[0393] Thermosetting agent (B2) can be used alone or in combination with two or more. When there are two or more thermosetting agents (B2), their combination and ratio can be chosen arbitrarily.

[0394] In the thermosetting resin composition (20a-1-1), the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of epoxy resin (B1). By keeping the content of the thermosetting agent (B2) above the above-mentioned lower limit, the curing of the thermosetting resin film (20a-1) is easier to achieve. In addition, by keeping the content of the thermosetting agent (B2) below the above-mentioned upper limit, the moisture absorption rate of the thermosetting resin film (20a-1) is reduced, and the reliability of the encapsulation obtained using the thermosetting resin film (20a-1) is further improved.

[0395] In the thermosetting resin composition (20a-1-1), relative to 100 parts by mass of polymer component (A), the content of thermosetting component (B) (the total content of epoxy resin (B1) and thermosetting agent (B2)) is preferably 50 to 1000 parts by mass, more preferably 100 to 900 parts by mass, and even more preferably 150 to 800 parts by mass. By keeping the content of thermosetting component (B) within this range, the adhesion between the protective layer 40 and the support sheet 30a is suppressed, and the peelability of the support sheet 30a is improved.

[0396] ---Curing Accelerator (C)---

[0397] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may further contain a curing accelerator (C).

[0398] The curing accelerator (C) is a component used to adjust the curing speed of the thermosetting resin composition (20a-1-1).

[0399] Preferred curing accelerators (C) include, for example: tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organophosphines (phosphines in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylphosphine. Tetraphenylborates, triphenylphosphine tetraphenylborates, and other tetraphenylborates are examples of tetraphenylborates.

[0400] Among these, imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazolium is more preferred.

[0401] Curing accelerator (C) can be used alone or in combination of two or more. When there are two or more curing accelerators (C), their combination and ratio can be chosen arbitrarily.

[0402] In the thermosetting resin composition (20a1-1-1), when a curing accelerator (C) is used, the content of the curing accelerator (C) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the thermosetting component (B). By keeping the content of the curing accelerator (C) above the above-mentioned lower limit, it is easier to obtain the effects brought about by using the curing accelerator (C) more significantly. In addition, by keeping the content of the curing accelerator (C) below the above-mentioned upper limit, for example, the effect of suppressing the segregation of highly polar curing accelerator (C) in the thermosetting resin film (20a-1) towards the bonding interface with the adhered object under high temperature / high humidity conditions is improved, and the reliability of the encapsulation obtained using the thermosetting resin film (20a-1) is further improved.

[0403] ---Filling Material (D)---

[0404] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain filler material (D).

[0405] By including filler material (D), the coefficient of thermal expansion of the protective layer 40 obtained by curing the thermosetting resin film 20a can be easily adjusted to a suitable range, further improving the reliability of the encapsulation obtained using the thermosetting resin film (20a-1). In addition, by including filler material (D) in the thermosetting resin film (20a-1), the moisture absorption rate of the protective layer 40 can be reduced, or the heat dissipation can be increased.

[0406] The filler material (D) can be any material selected from organic and inorganic fillers, but is preferably an inorganic filler material. Examples of preferred inorganic fillers include: powders of silica, alumina, talc, calcium carbonate, titanium dioxide, iron oxide red, silicon carbide, boron nitride, etc.; beads obtained by spheroidizing these inorganic fillers; surface-modified versions of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers, etc. Among these, silica or alumina are preferred inorganic fillers.

[0407] The filler material (D) can be used alone or in combination of two or more.

[0408] When there are two or more filler materials (D), their combination and ratio can be arbitrarily selected.

[0409] Based on the total amount of the active ingredients in the thermosetting resin composition (20a-1-1), the content of filler material (D) when using filler material (D) is preferably 5 to 80% by mass, more preferably 7 to 60% by mass. By keeping the content of filler material (D) within such a range, it becomes easier to adjust the aforementioned coefficient of thermal expansion.

[0410] The average particle size of the filler material (D) is preferably 5 to 1000 nm, more preferably 5 to 500 nm, and even more preferably 10 nm to 300 nm. The above-mentioned average particle size is obtained by measuring the outer diameter of a single particle at multiple locations and calculating the average value.

[0411] ---Coupled Agent (E)---

[0412] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain a coupling agent (E).

[0413] The coupling agent (E) is preferably a compound having functional groups capable of reacting with functional groups present in the polymer component (A) and the thermosetting component (B), and more preferably a silane coupling agent. Examples of preferred silane coupling agents include: 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, and 3-(2-aminoethylamino)propyltrimethoxysilane. Silanes, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinepropyltrimethoxysilane, 3-ureapropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silanes, etc.

[0414] The coupling agent (E) can be used alone or in combination of two or more. When there are two or more coupling agents (E), their combination and ratio can be chosen arbitrarily.

[0415] In the thermosetting resin composition (20a-1-1), when a coupling agent (E) is used, the content of the coupling agent (E) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 5 parts by mass, relative to the total content of the polymer component (A) and the thermosetting component (B) of 100 parts by mass. By keeping the content of the coupling agent (E) above or above the above-mentioned lower limit, the effects brought about by the use of the coupling agent (E), such as improved dispersibility of the filler material (D) in the resin and improved adhesion between the thermosetting resin film (20a-1) and the adherend, can be obtained more significantly. In addition, by keeping the content of the coupling agent (E) below or below the above-mentioned upper limit, the occurrence of venting can be further suppressed.

[0416] ---Crosslinking agent (F)---

[0417] When the above-mentioned acrylic resin or other resin having functional groups such as vinyl, (meth)acryloyl, amino, hydroxyl, carboxyl, or isocyanate groups that can bond with other compounds is used as polymer component (A), the thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain a crosslinking agent (F) for crosslinking the above-mentioned functional groups with other compounds.

[0418] The initial adhesion and cohesion of thermosetting resin films (20a-1) can be adjusted by using crosslinking agent (F) for crosslinking.

[0419] Examples of crosslinking agents (F) include: organic polyisocyanate compounds, organic polyamine compounds, metal chelate crosslinking agents (crosslinking agents with metal chelate structures), and aziridine crosslinking agents (crosslinking agents with aziridine groups).

[0420] Examples of organic polyisocyanate compounds include: aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, and alicyclic polyisocyanate compounds (hereinafter, these compounds are sometimes collectively referred to as "aromatic polyisocyanate compounds, etc."); trimers, isocyanurates, and adducts of the aforementioned aromatic polyisocyanate compounds, etc.; and terminal isocyanate carbamate prepolymers obtained by reacting the aforementioned aromatic polyisocyanate compounds, etc., with polyol compounds. The term "adduct" refers to the reaction product of the aforementioned aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, or alicyclic polyisocyanate compounds with low-molecular-weight compounds containing activated hydrogen, such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil. Examples include the phenylenedimethyl diisocyanate adduct of trimethylolpropane, etc.

[0421] More specifically, examples of the aforementioned organic polyisocyanate compounds include: 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-phenylenedimethyl diisocyanate; 1,4-phenylenedimethyl diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; compounds obtained by adding any one or more of toluene diisocyanate, hexamethylene diisocyanate, and phenylenedimethyl diisocyanate to all or part of the hydroxyl groups of a polyol such as trimethylolpropane; lysine diisocyanate, etc.

[0422] Examples of the aforementioned organic polyamine compounds include N,N'-diphenylmethane-4,4'-bis(1-aziridinylcarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetramethylolmethane-tri-β-aziridinylpropionate, and N,N'-toluene-2,4-bis(1-aziridinylcarboxamide)triethylene melamine.

[0423] When using an organic polyisocyanate compound as a crosslinking agent (F), a hydroxyl-containing polymer is preferably used as the polymer component (A). When the crosslinking agent (F) has isocyanate groups and the polymer component (A) has hydroxyl groups, a crosslinked structure can be easily introduced into the thermosetting resin film (20a-1) by reacting the crosslinking agent (F) with the polymer component (A).

[0424] Crosslinking agent (F) can be used alone or in combination of two or more. When there are two or more crosslinking agents (F), their combination and ratio can be chosen arbitrarily.

[0425] In the thermosetting resin composition (20a-1-1), when a crosslinking agent (F) is used, the content of the crosslinking agent (F) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the polymer component (A). By keeping the content of the crosslinking agent (F) above the lower limit, the effects of using the crosslinking agent (F) can be obtained more significantly. In addition, by keeping the content of the crosslinking agent (F) below the upper limit, the excessive use of the crosslinking agent (F) can be suppressed.

[0426] ---Energy-cured resin (G)---

[0427] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain an energy-curable resin (G).

[0428] By containing an energy-curable resin (G) in a thermosetting resin film (20a-1), its properties can be altered by irradiating it with energy rays.

[0429] Energy-curable resin (G) is a resin obtained by polymerizing (curing) an energy-curable compound. Examples of energy-curable compounds include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

[0430] Examples of acrylate compounds include: trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and other (meth)acrylates containing a chain-like aliphatic backbone; dicyclopentyl di(meth)acrylate and other (meth)acrylates containing a cyclic aliphatic backbone; polyethylene glycol di(meth)acrylate and other polyalkylene glycol (meth)acrylates; low-polyester (meth)acrylates; urethane (meth)acrylate oligomers; epoxy-modified (meth)acrylates; polyether (meth)acrylates other than the above-mentioned polyalkylene glycol (meth)acrylates; itaconic acid oligomers, etc.

[0431] The weight-average molecular weight of the energy-curable compound is preferably 100 to 30,000, more preferably 300 to 10,000.

[0432] The energy-curing compounds used for polymerization can be used alone or in combination of two or more. When two or more energy-curing compounds are used for polymerization, their combination and ratio can be arbitrarily selected.

[0433] When using an energy-curable resin (G), the content of the energy-curable resin (G) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and even more preferably 10 to 85% by mass, based on the total amount of the effective components of the thermosetting resin composition (20a-1-1).

[0434] ---Photopolymerization Initiator (H)---

[0435] In the case where the thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain an energy-curable resin (G), in order to enable the polymerization reaction of the energy-curable resin (G) to proceed effectively, the thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain a photopolymerization initiator (H).

[0436] Examples of photopolymerization initiators (H) include: benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ether, 2,4-diethylthioxanone, 1-hydroxycyclohexylphenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzoyl, bibenzyl, butanedione, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyl diphenylphosphine oxide, and 2-chloroanthraquinone, etc.

[0437] Photopolymerization initiator (H) can be used alone or in combination of two or more. When there are two or more photopolymerization initiators (H), their combination and ratio can be arbitrarily selected.

[0438] In the thermosetting resin composition (20a-1-1), the content of photopolymerization initiator (H) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass, relative to 100 parts by mass of energy-curable resin (G).

[0439] ---General Additives (I)---

[0440] The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may also contain a general additive (I). The general additive (I) may be any known additive and may be selected arbitrarily according to the purpose without particular limitation.

[0441] Preferred general additives (I) include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and getters.

[0442] The general additive (I) can be used alone or in combination of two or more. When there are two or more general additives (I), their combination and ratio can be chosen arbitrarily.

[0443] There is no particular limit to the content of general additive (I); it can be selected appropriately according to the purpose.

[0444] ---Solvent---

[0445] The thermosetting resin composition (20a-1-1) preferably further contains a solvent.

[0446] The processability of the solvent-containing thermosetting resin composition (20a-1-1) becomes good.

[0447] There are no particular limitations on the solvent, but preferred solvents include, for example: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds with amide bonds) such as dimethylformamide and N-methylpyrrolidone.

[0448] A single solvent can be used, or two or more solvents can be used in combination. When there are two or more solvents, their combination and ratio can be chosen arbitrarily.

[0449] From the viewpoint of being able to mix the components in the thermosetting resin composition (20a-1-1) more uniformly, the solvent is preferably methyl ethyl ketone or the like.

[0450] ---Preparation method of thermosetting resin composition (20a-1-1)---

[0451] The thermosetting resin composition (20a-1-1) can be prepared by combining the components used to constitute the composition.

[0452] There are no special restrictions on the order of addition of the components, and two or more components can be added at the same time. When using a solvent, the components can be pre-diluted by mixing the solvent with any other components, or they can be used by mixing the solvent with the components without pre-diluting any other components.

[0453] There are no particular limitations on the method of mixing the components during the preparation process. Appropriate methods can be selected from the following known methods: mixing by rotating a stir bar or stirring paddle; mixing by using a mixer; mixing by applying ultrasound, etc.

[0454] There are no special restrictions on the temperature and time of adding and mixing each component, as long as they do not cause the components to deteriorate. They can be adjusted appropriately, but the preferred temperature is 15-30℃.

[0455] --Energy-cured resin film (20a-2)--

[0456] The energy-curable resin film (20a-2) contains an energy-curable component (a).

[0457] An energy-curable resin film (20a-2) may, for example, be formed from an energy-curable resin composition (20a-2-1) containing an energy-curable component (a).

[0458] The energy-curable component (a) is preferably uncured, more preferably adhesive, and even more preferably uncured and adhesive.

[0459] It should be noted that, in the following description in this specification, "the content of each component of the active ingredient in the energy ray curable resin composition (20a-2-1) based on the total amount" is synonymous with "the content of each component in the energy ray curable resin film (20a-2) formed from the energy ray curable resin composition (20a-2-1)".

[0460] ---Energy-based solidification component (a)---

[0461] The energy-curable component (a) is a component that is cured by irradiation with energy rays, and it is also used to impart film-forming properties, flexibility, etc. to the energy-curable resin film (20a-2).

[0462] Examples of energy-curable components (a) include polymers (a1) with a weight-average molecular weight of 80,000 to 2,000,000 having energy-curable groups, and compounds (a2) with a molecular weight of 100 to 80,000 having energy-curable groups. The polymer (a1) may be a polymer in which at least a portion has been cross-linked with a cross-linking agent, or it may be an uncross-linked polymer.

[0463] • Polymer (a1)

[0464] Examples of polymers (a1) with a weight average molecular weight of 80,000 to 2,000,000 having energy-curable groups include: acrylic polymers (a11) having functional groups that can react with groups of other compounds, and energy-curable compounds (a12) having energy-curable groups such as groups that react with the aforementioned functional groups and energy-curable double bonds.

[0465] Examples of functional groups capable of reacting with groups found in other compounds include hydroxyl, carboxyl, amino, substituted amino (a group in which one or two hydrogen atoms of an amino group are replaced by a group other than a hydrogen atom), and epoxy. From the viewpoint of preventing corrosion of circuits in semiconductor wafers, semiconductor chips, etc., functional groups other than carboxyl are preferred. Among these, hydroxyl is preferred.

[0466] Acrylic polymers with functional groups (a11)

[0467] Examples of acrylic polymers (a11) with functional groups include polymers copolymerized from acrylic monomers with and without functional groups, as well as polymers further copolymerized with monomers other than acrylic monomers (non-acrylic monomers). Furthermore, acrylic polymers (a11) can be random copolymers or block copolymers.

[0468] Examples of acrylic monomers with functional groups include: hydroxyl-containing monomers, carboxyl-containing monomers, amino-containing monomers, substituted amino-containing monomers, and epoxy-containing monomers.

[0469] Examples of hydroxyl-containing monomers include: hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, 4-hydroxybutyl methacrylate, and other hydroxyalkyl methacrylates; non-methacrylic unsaturated alcohols such as vinyl alcohol and allyl alcohol (unsaturated alcohols without a methacryloyl skeleton), etc.

[0470] Examples of carboxyl-containing monomers include: (meth)acrylic acid, crotonic acid, and other olefinically unsaturated monocarboxylic acids (monocarboxylic acids with olefinically unsaturated bonds); fumaric acid, itaconic acid, maleic acid, citraconic acid, and other olefinically unsaturated dicarboxylic acids (dicarboxylic acids with olefinically unsaturated bonds); anhydrides of the above-mentioned olefinically unsaturated dicarboxylic acids; and (meth)acrylic acid carboxyl alkyl esters such as 2-carboxyethyl methacrylate.

[0471] Acrylic monomers with functional groups are preferably hydroxyl-containing monomers or carboxyl-containing monomers, and more preferably hydroxyl-containing monomers.

[0472] The acrylic monomers with functional groups that constitute the acrylic polymer (a11) can be used alone or in combination of two or more. When there are two or more acrylic monomers with functional groups that constitute the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

[0473] Examples of acrylic monomers without functional groups include: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, sec-butyl methacrylate, tert-butyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, n-nonyl methacrylate, isononyl methacrylate, etc. Alkyl acrylates, such as decyl methacrylate, undecyl methacrylate, dodecyl methacrylate (laurate methacrylate), tridecyl methacrylate, tetradecyl methacrylate (myristyl methacrylate), pentadecyl methacrylate, hexadecyl methacrylate (palmitoyl methacrylate), heptadecanyl methacrylate, and octadecyl methacrylate (stearyl methacrylate), are chain alkyl acrylates in which the alkyl group has a carbon atom number of 1 to 18.

[0474] Furthermore, examples of acrylic monomers without functional groups include: methoxymethyl methacrylate, methoxyethyl methacrylate, ethoxymethyl methacrylate, ethoxyethyl methacrylate, and other alkoxyalkyl-containing (meth)acrylates; (meth)acrylates with aromatic groups, including aryl methacrylates such as phenyl methacrylate; non-crosslinked (meth)acrylamide and its derivatives; and (meth)acrylates with non-crosslinked tertiary amino groups, such as N,N-dimethylaminoethyl methacrylate and N,N-dimethylaminopropyl methacrylate.

[0475] The non-functional acrylic monomers constituting the acrylic polymer (a11) can be used alone or in combination of two or more. When there are two or more non-functional acrylic monomers constituting the acrylic polymer (a11), their combination and ratio can be arbitrarily chosen.

[0476] Examples of non-acrylic acid monomers include: olefins such as ethylene and norbornene; vinyl acetate; styrene, etc.

[0477] The non-acrylic monomers constituting acrylic polymers (a11) can be used alone or in combination of two or more. When there are two or more non-acrylic monomers constituting acrylic polymers (a11), their combination and ratio can be arbitrarily chosen.

[0478] In the acrylic polymer (a11), the proportion (content) of structural units derived from acrylic monomers having functional groups relative to the total mass of the structural units constituting the polymer is preferably 0.1 to 50% by mass, more preferably 1 to 40% by mass, and even more preferably 3 to 30% by mass. By keeping the above proportions within such a range, the content of energy-curable groups in the acrylic resin (a1-1) obtained by copolymerizing the acrylic polymer (a11) and the energy-curable compound (a12) can easily adjust the degree of curing of the cured protective layer 40 to a preferred range.

[0479] The acrylic polymer (a11) constituting the acrylic resin (a1-1) can be used alone or in combination of two or more. When there are two or more acrylic polymers (a11) constituting the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

[0480] Based on the total amount of the active ingredients in the energy-curable resin composition (20a-2-1), the content of acrylic resin (a1-1) is preferably 1 to 60% by mass, more preferably 3 to 50% by mass, and even more preferably 5 to 40% by mass.

[0481] Energy-curing compounds (a12)

[0482] The energy-curable compound (a12) is preferably a compound having one or more groups selected from isocyanate group, epoxy group and carboxyl group as functional groups that can react with the functional groups of acrylic polymer (a11), and more preferably a compound having isocyanate group as the above-mentioned group.

[0483] Energy-curable compounds (a12), for example, when they have an isocyanate group as one of the above-mentioned groups, readily react with the hydroxyl group of acrylic polymers (a11) that have a hydroxyl group as one of the above-mentioned functional groups.

[0484] The energy-curable compound (a12) preferably has 1 to 5, more preferably 1 to 2, energy-curable groups in one molecule.

[0485] Examples of energy-curable compounds (a12) include: 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate; diisocyanate compounds or polyisocyanate compounds, acryloyl monoisocyanate compounds obtained by reacting with hydroxyethyl methacrylate; diisocyanate compounds or polyisocyanate compounds, acryloyl monoisocyanate compounds obtained by reacting with polyol compounds and hydroxyethyl methacrylate, etc. Among these, 2-methacryloyloxyethyl isocyanate is preferred.

[0486] The energy-curable compound (a12) constituting the acrylic resin (a1-1) can be used alone or in combination of two or more. When there are two or more energy-curable compounds (a12) constituting the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

[0487] In the acrylic resin (a1-1), the proportion of the energy-curable groups derived from the energy-curable compound (a12) relative to the content of the aforementioned functional groups derived from the acrylic polymer (a11) is preferably 20 to 120 mol%, more preferably 35 to 100 mol%, and even more preferably 50 to 100 mol%. By keeping the proportion of the above content within such a range, the adhesive strength of the cured protective layer 40 becomes greater. Therefore, it is easier for the protective layer 40, which serves as a protective layer, to peel off. It should be noted that when the energy-curable compound (a12) is a monofunctional compound (having one of the aforementioned groups in one molecule), the upper limit of the above content proportion is 100 mol%, but when the energy-curable compound (a12) is a polyfunctional compound (having two or more of the aforementioned groups in one molecule), the upper limit of the above content proportion sometimes exceeds 100 mol%.

[0488] The weight-average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.

[0489] In the case where polymer (a1) is a polymer that has been cross-linked by at least a portion of a cross-linking agent, polymer (a1) may be a polymer that has been cross-linked by a monomer that is not one of the monomers described above as constituting acrylic polymer (a11) and has a group that reacts with the cross-linking agent, or a polymer that has been cross-linked by a group that reacts with the functional group derived from the energy ray curable compound (a12).

[0490] Polymer (a1) can be used alone or in combination of two or more. When there are two or more polymers (a1), their combination and ratio can be chosen arbitrarily.

[0491] Compound (a2)

[0492] The energy-curing groups of compounds (a2) with a weight-average molecular weight of 100 to 80,000 that have energy-curing groups can include groups containing energy-curing double bonds, and preferred groups can include (meth)acryloyl or vinyl groups.

[0493] Compound (a2) is not specifically limited as long as it meets the above conditions. Examples include: low molecular weight compounds with energy-curable groups, epoxy resins with energy-curable groups, and phenolic resins with energy-curable groups.

[0494] As a low molecular weight compound having an energy-curing group in compound (a2), examples include multifunctional monomers or oligomers, and preferably acrylate compounds having a (meth)acryloyl group. Examples of acrylate compounds include: 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)propane, etc. [Phenyl]fluorene, 2,2-bis[4-((meth)acryloyloxypolypropoxy)phenyl]propane, tricyclodecanediethanol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate Bifunctional (meth)acrylates such as diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxyethoxy)phenyl]propane, neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, and 2-hydroxy-1,3-di(meth)acryloyloxypropane; tris(2-(meth)acryloyloxyethyl)isocyanurate and ε-caprolactone-modified tris(2-(meth)acryloyloxyethyl)isocyanurate. Multifunctional (meth)acrylates such as ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, di(trimethylolpropane)tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, dipentaerythritol hexa(meth)acrylate; multifunctional (meth)acrylate oligomers such as urethane (meth)acrylate oligomers; etc.

[0495] As epoxy resins or phenolic resins having energy-curable groups in compound (a2), those described, for example, in paragraph 0043 of Japanese Patent Application Publication No. 2013-194102, may be used.

[0496] The weight-average molecular weight of compound (a2) is preferably 100 to 30,000, more preferably 300 to 10,000.

[0497] Compound (a2) can be used alone or in combination with two or more other compounds. When there are two or more compounds (a2), their combination and ratio can be chosen arbitrarily.

[0498] ---Polymers without energy-curing groups (b)---

[0499] When the energy-ray curable resin composition (20a-2-1) and the energy-ray curable resin film (20a-2) contain compound (a2) as an energy-ray curable component (a), it is preferable to further contain a polymer (b) that does not have an energy-ray curable group.

[0500] Polymers (b) that do not have energy-curable groups can be polymers that have been cross-linked by a cross-linking agent in at least a portion thereof, or they can be uncross-linked polymers.

[0501] Examples of polymers (b) that do not have energy-curable groups include: acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, and urethane acrylate resins. Among these, the polymer (b) is preferably an acrylic polymer (hereinafter, sometimes simply referred to as "acrylic polymer (b-1)").

[0502] The acrylic polymer (b-1) can be one of the well-known types, for example, it can be a homopolymer of one acrylic monomer or a copolymer of two or more acrylic monomers. Alternatively, the acrylic polymer (b-1) can also be a copolymer of one or more acrylic monomers with one or more monomers other than acrylic monomers (non-acrylic monomers).

[0503] Examples of acrylic monomers constituting acrylic polymers (b-1) include: alkyl (meth)acrylates, (meth)acrylates having a cyclic backbone, glycidyl (meth)acrylates, hydroxyl (meth)acrylates, and substituted amino (meth)acrylates.

[0504] Examples of alkyl methacrylates include: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, sec-butyl methacrylate, tert-butyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, n-nonyl methacrylate, isononyl methacrylate, etc. Alkyl acrylates, such as decyl acrylate, undecyl acrylate, dodecyl acrylate (lauryl acrylate), tridecyl acrylate, tetradecyl acrylate (myristyl acrylate), pentadecyl acrylate, hexadecyl acrylate (palmitoyl acrylate), heptadecanyl acrylate, and octadecyl acrylate (stearyl acrylate), are chain alkyl acrylates in which the alkyl group has a chain structure with 1 to 18 carbon atoms.

[0505] Examples of (meth)acrylates having a cyclic skeleton include: isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, and other cycloalkyl (meth)acrylates; benzyl (meth)acrylate and other aralkyl (meth)acrylates; dicyclopentenyl (meth)acrylate and other cycloalkenyl (meth)acrylates; dicyclopentenoxyethyl (meth)acrylate and other cycloalkenoxyalkyl (meth)acrylates; and so on.

[0506] Examples of glycidyl (meth)acrylates include glycidyl (meth)acrylate, etc.

[0507] Examples of the hydroxyl-containing (meth)acrylates mentioned above include: hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, and 4-hydroxybutyl methacrylate.

[0508] Examples of substituted amino (meth)acrylates include, for example, N-methylaminoethyl (meth)acrylate.

[0509] Non-acrylic monomers that constitute acrylic polymers (b-1) can be listed as: olefins such as ethylene and norbornene; vinyl acetate; styrene; and so on.

[0510] As a polymer (b) that is at least partially crosslinked by a crosslinking agent and does not have energy-curable groups, examples include polymers obtained by reacting reactive functional groups in polymer (b) with a crosslinking agent.

[0511] The reactive functional group can be appropriately selected according to the type of crosslinking agent, etc., and there is no special limitation. For example, when the crosslinking agent is a polyisocyanate compound, hydroxyl, carboxyl, and amino groups can be listed as the aforementioned reactive functional groups. Among these functional groups, hydroxyl groups with high reactivity with isocyanate groups are preferred.

[0512] Furthermore, when the crosslinking agent is an epoxy compound, the reactive functional groups mentioned above can be listed as carboxyl, amino, and amide groups, among which carboxyl groups with high reactivity with epoxy groups are preferred.

[0513] It should be noted that, from the perspective of preventing corrosion of the circuits of semiconductor wafers and semiconductor chips, the reactive functional groups mentioned above are preferably groups other than carboxyl groups.

[0514] As a polymer (b) having reactive functional groups but lacking energy-curable groups, examples include polymers obtained by polymerizing monomers having at least a reactive functional group. In the case of an acrylic polymer (b-1), any one or both of the acrylic and non-acrylic monomers listed as monomers constituting the polymer can be used as monomers having reactive functional groups. For example, as a polymer (b) having a hydroxyl group as a reactive functional group, examples include polymers obtained by polymerizing hydroxyl-containing (meth)acrylates. In addition, polymers obtained by polymerizing monomers obtained by replacing one or more hydrogen atoms of the aforementioned acrylic or non-acrylic monomers with the aforementioned reactive functional groups can also be listed.

[0515] In the polymer (b) having reactive functional groups, the proportion (content) of structural units derived from monomers having reactive functional groups relative to the total mass of the structural units constituting the polymer is preferably 1 to 20% by mass, more preferably 2 to 10% by mass. By keeping the above proportion within such a range, the degree of crosslinking in the polymer (b) will reach a more preferred range.

[0516] From the view that the film-forming properties of the energy-curable resin composition (20a-2-1) are improved, the weight-average molecular weight (Mw) of the polymer (b) without energy-curable groups is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000.

[0517] Polymers (b) without energy-curable groups can be used alone or in combination of two or more. When there are two or more polymers (b) without energy-curable groups, their combination and ratio can be arbitrarily chosen.

[0518] As an energy-ray curable resin composition (20a-2-1), a composition containing either or both of a polymer (a1) and a compound (a2) can be listed.

[0519] In the case where the energy-curable resin composition (20a-2-1) contains compound (a2), it is preferable to further contain a polymer (b) that does not have an energy-curable group, and in this case, it is preferable to further contain a polymer (a1).

[0520] Alternatively, the energy-curable resin composition (20a-2-1) may also be free of compound (a2) but contain polymer (a1) and polymer (b) that does not have energy-curable groups.

[0521] When the energy-curable resin composition (20a-2-1) contains a polymer (a1), a compound (a2), and a polymer (b) without energy-curable groups, the content of compound (a2) is preferably 10 to 400 parts by mass, more preferably 30 to 350 parts by mass, relative to the total content of polymer (a1) and polymer (b) without energy-curable groups of 100 parts by mass.

[0522] Based on the total amount of the effective components in the energy-curable resin composition (20a-2-1), the total content of the energy-curable component (a) and the polymer (b) without energy-curable groups is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and even more preferably 20 to 70% by mass. By keeping the content of the energy-curable component within such a range, the energy-curability of the energy-curable resin film (20a-2) becomes better.

[0523] In addition to the energy-curing component, the energy-curing resin composition (20a-2-1) may also contain one or more of the following, depending on the purpose: thermosetting components, photopolymerization initiators, fillers, coupling agents, crosslinking agents, and general additives.

[0524] For example, by using an energy-curable resin composition (20a-2-1) containing energy-curable and thermosetting components, the formed energy-curable resin film (20a-2) will have increased adhesion to the adhered object by heating, and the strength of the protective layer 40 formed by the energy-curable resin film (20a-2) will also be increased.

[0525] The thermosetting components, photopolymerization initiators, fillers, coupling agents, crosslinking agents, and general additives in the energy-ray curable resin composition (20a-2-1) can be listed as those that are the same as the thermosetting components (B), photopolymerization initiators (H), fillers (D), coupling agents (E), crosslinking agents (F), and general additives (I) in the thermosetting resin composition (20a-1-1).

[0526] In the energy-curable resin composition (20a-2-1), the thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general additive can each be used individually or in combination of two or more. When two or more are used in combination, their combination and ratio can be arbitrarily selected.

[0527] The contents of thermosetting components, photopolymerization initiators, fillers, coupling agents, crosslinking agents, and general additives in the energy-ray curable resin composition (20a-2-1) can be adjusted appropriately according to the purpose, without any special limitations.

[0528] The energy-curable resin composition (20a-2-1) preferably contains a solvent further because its processability is improved by dilution.

[0529] As solvents contained in the energy ray curable resin composition (20a-2-1), those that are the same as, for example, solvents in the thermosetting resin composition (20a-1-1) can be listed.

[0530] The solvent contained in the energy-ray curable resin composition (20a-2-1) can be used alone or in combination of two or more solvents. When using two or more solvents in combination, their combination and ratio can be arbitrarily selected.

[0531] ---Other Ingredients---

[0532] In addition to the energy-ray curable component described above, the energy-ray curable resin composition (20a-2-1) may contain, in the same manner as the thermosetting resin film (20a-1) described above, appropriate amounts of components other than the curable component, namely, curing accelerator (C).

[0533] ---Preparation method of energy-ray curable resin composition (20a-2-1)---

[0534] The energy-curable resin composition (20a-2-1) can be obtained by combining the components used to constitute the composition. There is no particular limitation on the order of addition of the components, and two or more components may be added at the same time.

[0535] When using a solvent, the compounding components can be used by pre-diluting the compounding components by mixing the solvent with any other compounding components, or by mixing the solvent with these compounding components without pre-diluting any other compounding components. There are no particular limitations on the method of mixing the components during compounding; any appropriate method can be selected from the following known methods: mixing by rotating a stir bar or impeller; mixing using a mixer; mixing by applying ultrasound, etc.

[0536] There are no special restrictions on the temperature and time of adding and mixing each component, as long as they do not cause the components to deteriorate. They can be adjusted appropriately, but the preferred temperature is 15-30℃.

[0537] -Support plate 30a-

[0538] The support sheet 30a functions as a support for the curing resin 20a.

[0539] The support sheet 30a may consist solely of the support substrate 31, or it may be a laminate of the support substrate 31 and the adhesive layer 33, or it may be a laminate composed of the support substrate 31, the buffer layer 32 (intermediate layer), and the adhesive layer 33 stacked sequentially. The laminate composed of the support substrate 31, the buffer layer 32 (intermediate layer), and the adhesive layer 33 stacked sequentially is suitable for use as a back abrasion sheet.

[0540] The following describes the support substrate 31, the adhesive layer 33, and the buffer layer 32 (intermediate layer) that the support sheet 30a may optionally have.

[0541] --Supporting Substrate--

[0542] The supporting substrate is in sheet or film form, and various resins can be listed as examples of its constituent materials.

[0543] Resins constituting the supporting substrate can include, for example: polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylate copolymer, and ethylene-norbornene copolymer; and vinyl chloride copolymers such as polyvinyl chloride and vinyl chloride copolymer. Resins (resins obtained using vinyl chloride as a monomer); polystyrene; polycyclic olefins; polyethylene terephthalate, polyethylene naphthalate, polyethylene butylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalate, and other fully aromatic polyesters whose structural units all have aromatic ring groups; copolymers of two or more of the above polyesters; poly(meth)acrylates; polyurethanes; polyurethane acrylates; polyimides; polyamides; polycarbonates; fluoropolymers; polyacetals; modified polyphenylene ethers; polyphenylene sulfides; polysulfones; polyetherketones, etc.

[0544] In addition, examples of polymer alloys, such as the aforementioned polyester and mixtures of other resins, can be used as the resin constituting the support substrate. Among the aforementioned polymer alloys of polyester and other resins, it is preferable that the amount of resin other than polyester is relatively small.

[0545] In addition, examples of resins constituting the support substrate include: cross-linked resins obtained by cross-linking one or more of the resins exemplified so far; and modified resins using one or more ionomers of the resins exemplified so far.

[0546] The resin constituting the support substrate can be used alone or in combination of two or more resins. When there are two or more resins constituting the support substrate, their combination and ratio can be chosen arbitrarily.

[0547] The supporting substrate can be a single layer or multiple layers. When the supporting substrate is multi-layered, these layers can be the same or different from each other, and there are no particular restrictions on the combination of these layers.

[0548] The thickness of the support substrate is preferably 5 to 1,000 μm, more preferably 10 to 500 μm, further preferably 15 to 300 μm, and even more preferably 20 to 150 μm.

[0549] Here, "thickness of the support substrate" refers to the overall thickness of the support substrate. For example, the thickness of a support substrate composed of multiple layers refers to the total thickness of all the layers that make up the support substrate.

[0550] The support substrate is preferably a material with high thickness accuracy, that is, a material in which thickness deviation is suppressed regardless of the location. Among the above-mentioned constituent materials, examples of materials with high thickness accuracy that can be used to construct such a support substrate include: polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, etc.

[0551] In addition to the main constituent materials such as resin mentioned above, the supporting substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0552] The support substrate can be transparent or opaque, and may be colored or have other layers deposited on it depending on the purpose. In addition, when the curable resin film (x) is an energy-curable resin film (20a-2) and the adhesive layer is an energy-curable adhesive layer, it is preferable that the support substrate is a material that allows energy rays to pass through.

[0553] The support substrate can be manufactured using known methods. For example, a resin-containing support substrate can be manufactured by molding a resin composition containing the aforementioned resin.

[0554] --Adhesive layer—

[0555] The adhesive layer is in sheet or film form and contains adhesive.

[0556] Examples of adhesives include: acrylic resins (adhesives formed from resins having (meth)acryloyl groups), urethane resins (adhesives formed from resins having urethane bonds), rubber resins (adhesives formed from resins having a rubber structure), silicone resins (adhesives formed from resins having siloxane bonds), epoxy resins (adhesives formed from resins having epoxy groups), polyvinyl ethers, polycarbonate, and other adhesive resins. Among these, acrylic resins are preferred.

[0557] It should be noted that, in this invention, the term "adhesive resin" is a concept that includes both adhesive resins and bonding resins. For example, it includes not only resins that are adhesive in themselves, but also resins that exhibit adhesiveness when used in combination with other components such as additives, and resins that exhibit bonding in the presence of a trigger such as heat or water.

[0558] The adhesive layer can be a single layer or multiple layers. When the adhesive layer is multiple, these layers can be the same or different from each other, and there are no particular restrictions on the combination of these layers.

[0559] The thickness of the adhesive layer is preferably 1 to 1000 μm, more preferably 5 to 500 μm, and even more preferably 10 to 100 μm. Here, "thickness of the adhesive layer" refers to the overall thickness of the adhesive layer. For example, the thickness of an adhesive layer composed of multiple layers refers to the total thickness of all the layers constituting the adhesive layer.

[0560] The adhesive layer can be formed using an energy-curable adhesive or a non-energy-curable adhesive. The properties of an adhesive layer formed using an energy-curable adhesive can be easily adjusted before and after curing.

[0561] --Buffer layer (intermediate layer)--

[0562] The buffer layer (intermediate layer) can be sheet-like or film-like, and its constituent materials can be appropriately selected according to the purpose, without any particular limitation. For example, when the purpose is to suppress deformation of the protective layer caused by the protective layer covering the semiconductor surface reflecting the shape of the bumps present on the semiconductor surface, the preferred constituent materials for the buffer layer (intermediate layer) from the viewpoint of high conformability to unevenness and further improved adhesion of the buffer layer (intermediate layer) can be urethane (meth)acrylate, etc.

[0563] The buffer layer (intermediate layer) can be a single layer or multiple layers. When the buffer layer (intermediate layer) is multiple, these layers can be the same or different from each other, and there are no particular restrictions on the combination of these layers.

[0564] The thickness of the buffer layer (intermediate layer) can be appropriately adjusted according to the height of the bumps on the semiconductor surface to be protected. However, from the viewpoint that the influence of even high bumps can be easily absorbed, it is preferably 50 to 600 μm, more preferably 70 to 500 μm, and even more preferably 80 to 400 μm. Here, "thickness of the buffer layer (intermediate layer)" refers to the overall thickness of the buffer layer (intermediate layer). For example, the thickness of a buffer layer (intermediate layer) composed of multiple layers refers to the total thickness of all layers constituting the buffer layer (intermediate layer).

[0565] Next, the manufacturing method of the laminate 30 for forming the protective layer will be described.

[0566] ((Manufacturing method of laminate 30 for forming protective layer))

[0567] The protective layer forming laminate 30 can be manufactured by sequentially stacking the above-mentioned layers in a corresponding positional relationship.

[0568] For example, when manufacturing the support sheet 30a, if an adhesive layer 33 or a buffer layer 32 (intermediate layer) is to be laminated on the support substrate 31, the adhesive layer 33 or the buffer layer 32 (intermediate layer) can be laminated by applying an adhesive composition or a composition for forming the buffer layer 32 (intermediate layer) onto the support substrate 31 and drying or irradiating with energy rays as needed.

[0569] Examples of coating methods include: spin coating, spray coating, bar coating, doctor blade coating, roller coating, roller knife coating, scraper coating, mold coating, gravure coating, etc.

[0570] On the other hand, for example, if a curable resin film (x) is to be further laminated on the adhesive layer 33 that has been laminated on the support substrate 31, the curable resin 20a can be directly formed by applying a thermosetting resin composition (20a-1-1) or an energy-curable resin composition (20a-2-1) to the adhesive layer 33.

[0571] Similarly, if an adhesive layer 33 is to be further laminated on the buffer layer 32 (intermediate layer) already laminated on the support substrate 31, the adhesive layer 33 can be formed directly by applying an adhesive composition to the buffer layer 32 (intermediate layer).

[0572] In this way, when using any composition to form a continuous two-layer laminate, a new layer can be formed by further applying the composition onto the layer formed by the above-described composition. Preferably, the latter of the two layers is first formed on a separate release film using the above-described composition, and then the exposed surface of this formed layer opposite to the side in contact with the release film is bonded to the exposed surface of the remaining layer to form a continuous two-layer laminate. In this case, the above-described composition is preferably applied to the release treatment surface of the release film. The release film can be removed as needed after the laminate structure is formed.

[0573] <<Process (E1)>>

[0574] In process (E1), semiconductor chips are placed one by one on a cover sheet to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet.

[0575] For details, please refer to the description in the first embodiment.

[0576] <<Process (A)>>

[0577] In process (A), a shielding layer is formed on a semiconductor chip in which the bump forming surface of a semiconductor wafer with bumps is protected by a protective layer formed by a cured product of a curable resin, wherein, in a state where at least one of the bumps and the bump forming surface is covered by a covering sheet, a shielding layer is formed on at least a portion of the semiconductor chip exposed from the covering sheet.

[0578] For details, please refer to the description in the first embodiment.

[0579] <<Process (B)>>

[0580] In process (B), after a shielding layer is formed on the semiconductor chip, the covering sheet is peeled off from at least either the bump or the semiconductor wafer.

[0581] For details, please refer to the description in the first embodiment.

[0582] In the fourth embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0583] Furthermore, in the fourth embodiment, since the bump forming surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. In addition, it is easier to peel the coating sheet from the bumped wafer, and the occurrence of residual adhesive during peeling can be suppressed.

[0584] As variations of the fourth embodiment, examples include:

[0585] (i) Re-attaching the backing tape (process (C4) → process (C5) → process (CY) → process (C7) → process (CX) → process (C5) → process (C6) → process (CY) → process (8) → process (E1) → process (A) → process (B));

[0586] (ii) Other methods of re-attaching the backing tape (process (C4) → process (C5) → process (CY) → process (C7) → process (C5) → process (C6) → process (CY) → process (CX) → process (8) → process (E1) → process (A) → process (B));

[0587] (iii) One-time curing method (process (C4) → process (C5) → process (C6) → the first half of process (8) (placed on the cutting strip) → process (CY) → process (C7) → process (CX) → the second half of process (8) (individualized) → process (E1) → process (A) → process (B)); etc.

[0588] <Fifth Implementation Method>

[0589] Figure 14 A simplified diagram of the fifth embodiment is shown.

[0590] In the fifth embodiment, such as Figure 14 As shown, the following steps are performed sequentially: (C') (C4, C5, C6, CY, C7, CX, C8)), (E2), (F), (A), and (B).

[0591] The fifth embodiment differs from the fourth embodiment in that it performs steps (E2) and (F) instead of the aforementioned step (E1).

[0592] The following is a detailed description of the differences between this embodiment and the fourth embodiment (process (E2) and process (F)).

[0593] <<Process (E2)>>

[0594] In process (E2), a semiconductor chip is placed on a cover sheet in one step to form a state in which at least one of the bumps and the bump forming surface is covered by the cover sheet.

[0595] Process (E2) can be performed in the same way as process (E1), except that it can place semiconductor chips all at once instead of placing them one by one.

[0596] <<Process (F)>>

[0597] In process (F), the aforementioned coating sheet on which the semiconductor chip is mounted is expanded. Here, the coating sheet can be expanded along the arrangement direction of the semiconductor chip, or the coating sheet can be expanded radially.

[0598] By expanding the coating sheet carrying the semiconductor chips along the arrangement direction of the semiconductor chips in this way, it is possible to expand to the desired spacing even when the spacing between the semiconductor chips is narrow.

[0599] It should be noted that the expansion of the coating sheet can be achieved, for example, using a sheet expansion device.

[0600] Alternatively, steps (G) to (I) can be performed in place of steps (E2) and (F), or steps (G) to (I) can be performed in addition to steps (E2) and (F). Here, in step (H), the expansion strip can be expanded along the arrangement direction of the semiconductor chip, or the expansion strip can be expanded radially.

[0601] • Process (G): The process of placing a semiconductor chip on an expansion tape.

[0602] • Process (H): The process of expanding the expansion strip on which the semiconductor chip is mounted.

[0603] • Process (I): The process of transferring the semiconductor chip placed on the expanded tape to the coating wafer.

[0604] In the fifth embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0605] Furthermore, in the fifth embodiment, since the bump forming surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. In addition, it is easier to peel the coating sheet from the bumped wafer, and residual adhesive can be suppressed during peeling.

[0606] <Sixth Implementation Method>

[0607] Figure 15 A simplified diagram of the sixth embodiment is shown.

[0608] In the sixth embodiment, such as Figure 15 As shown, the following steps are performed sequentially: (C') (C4, C5, C6, CY, C7, CX, C8)), (F), (A), and (B).

[0609] The sixth embodiment differs from the fifth embodiment in that it does not perform the above-described process (E2) and the process (C8) in process (C') is different.

[0610] The following is a detailed description of the differences (process (C8)) between this embodiment and the fifth embodiment.

[0611] (Process (C8))

[0612] In process (C8), the bumped wafer with a protective layer is cut off from the opposite side of the bump formation surface to be monolithized, thereby obtaining a semiconductor chip with the bump formation surface protected by the protective layer.

[0613] Cutting can be carried out appropriately using existing and well-known methods such as blade cutting or laser cutting.

[0614] The sixth embodiment's process (C8) can be performed in the same way as the fifth embodiment's process (C8) (i.e., the fourth embodiment's process (C8)), except that instead of cutting the bumped wafer with the protective layer formed from the bump forming surface side for monolithic assembly, the process is cut from the opposite side of the bump forming surface.

[0615] By placing a bumped wafer with a protective layer on a cover sheet and then cutting the bumped wafer with the protective layer from the opposite side of the bump formation surface to achieve monolithic wafer formation, the process of transferring semiconductor chips (process (E2)) can be omitted.

[0616] In the sixth embodiment, since a shielding layer is formed on the semiconductor chip whose bump formation surface is covered by a protective layer, even if a conductive material used to form the shielding layer is wound around the bump formation surface side of the semiconductor chip and penetrates between the semiconductor chip and the covering sheet, the formation of conductive material on the bump formation surface can be sufficiently suppressed.

[0617] Furthermore, in the sixth embodiment, since the bump forming surface of the semiconductor wafer is covered by a protective layer, the amount of bump embedding of the coating sheet can be reduced. In addition, it is easier to peel the coating sheet from the bumped wafer, and residual adhesive can be suppressed during peeling.

[0618] According to the semiconductor device manufacturing method of the present invention, since a shielding layer is formed on a semiconductor chip whose bump forming surface is covered by a resin layer (i.e., a protective layer) formed by a cured curable resin, the formation of conductive material on the bump forming surface can be sufficiently suppressed even if a conductive material used to form the shielding layer is wound around the bump forming surface side of the semiconductor chip.

[0619] Furthermore, according to the semiconductor device manufacturing method of the present invention, since the bump forming surface of the semiconductor wafer is covered by a resin layer (i.e., a protective layer) formed by a cured product of a curable resin, the amount of bump embedding of the coating sheet can be reduced, and furthermore, residual adhesive can be suppressed when the coating sheet is peeled off from the bumped wafer.

[0620] Example

[0621] The present invention will now be described in more detail with reference to specific embodiments. However, the present invention is not limited to the embodiments shown below.

[0622] (Example 1)

[0623] Similar to the first embodiment, the following steps were performed in sequence: step (C1-1), step (C1-2), step (C1-3), step (C2), step (CX), step (C3), step (E1), step (A), and step (B).

[0624] It should be noted that, in order to confirm the presence of conductive material on the bump formation surface, the bump formation surface was observed using an optical microscope (KEYENCE, model number: VHX-1000). The results showed that no conductive material was present on the bump formation surface or on the bumps of the semiconductor chip.

[0625] First, as a process (C1-1), a protective layer forming laminate having a stacked structure of a support sheet and a curable resin layer is bonded to the bump forming surface of a wafer used for semiconductor chip fabrication, with the curable resin layer as the bonding surface. Detailed explanation follows.

[0626] <Preparation of Compositions for Forming Curable Resin Layers>

[0627] The following polymer components (A) 9.9% by mass, epoxy resin (B1) 37.9% by mass, epoxy resin (B2) 24.7% by mass, thermosetting agent (B3) 18.3% by mass, curing accelerator (C) 0.2% by mass, and filler (D) 9.0% by mass were dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to obtain a curable resin layer forming composition with a solid content concentration of 55% by mass.

[0628] • Polymer composition (A): Polyvinyl butyral (manufactured by Sekisui Chemicals Co., Ltd., "Eslec (registered trademark) B BL-10", weight-average molecular weight 25,000, glass transition temperature 59°C) with structural units shown in formulas (i)-1, (i)-2 and (i)-3 below was used. In the formulas, l1 is 68-74 mol%, m1 is 1-3 mol%, and n1 is approximately 28 mol%.

[0629] [Chemical Formula 1]

[0630]

[0631] In the formula, l1, m1, and n1 are the proportions (mol%) of each structural unit.

[0632] • Epoxy resin (B1): Liquid bisphenol A type epoxy resin (DIC company's "EPICLON (registered trademark) EXA-4850-1000", epoxy equivalent 404~412g / eq)

[0633] • Epoxy resin (B2): Dicyclopentadiene type epoxy resin (DIC Company's "EPICLON (registered trademark) HP-7200", epoxy equivalent 254~264g / eq)

[0634] • Thermosetting agent (B3): Phenolic varnish type phenolic resin (manufactured by Showa Denko Co., Ltd. "SHONOL (registered trademark) BRG-556")

[0635] • Curing accelerator (C): 2-Phenyl-4,5-dihydroxymethylimidazol (manufactured by Shikoku Chemical Industry Co., Ltd., "CUREZOL (registered trademark) 2PHZ")

[0636] • Filler material (D): Spherical silica modified with epoxy groups (Admatechs "Adamano YA050C-MKK", average particle size 0.05 μm)

[0637] <Manufacturing of Curing Resin Layers>

[0638] The curable resin layer forming composition obtained above was applied to the peeling surface of a release film ("SP-PET381031", manufactured by Lintec Co., Ltd., with a thickness of 38 μm) that had undergone a release treatment by silicone treatment on one side of a polyethylene terephthalate film, and then heated and dried at 120°C for 2 minutes to obtain a curable resin layer with a thickness of 30 μm.

[0639] The thickness of the cured resin layer was measured using a contact thickness gauge (Teclock, product name "PG-02").

[0640] <Manufacturing of Laminated Body for Protective Layer Formation>

[0641] Next, using an adhesive tape ("E-8510HR" manufactured by Lintec Co., Ltd.) as a support sheet, the curable resin layer on the release film is bonded to the bonding target layer of the adhesive tape, thereby obtaining a protective layer laminate formed by stacking the support sheet, the curable resin layer and the release film in this order in their thickness direction.

[0642] In the protective layer forming laminate obtained above, the release film is removed, and the surface of the exposed curable resin layer (exposed surface) is pressed onto the bump forming surface of the 8-inch φ bump wafer, thereby bonding the protective layer forming laminate to the bump forming surface of the semiconductor chip fabrication wafer. At this time, the bonding of the protective layer forming laminate is performed using a bonding apparatus (roller laminator, Lintec Corporation "RAD-3510F / 12"), under conditions of an operating table temperature of 90°C, a bonding speed of 2 mm / sec, and a bonding pressure of 0.5 MPa, while heating the curable resin layer. As the 8-inch φ bump wafer, a semiconductor chip fabrication wafer (Walts WLPTEGM2) with a 0.4 mm pitch BGA, having a bump height of 210 μm, a bump width of 250 μm, and a distance of 400 μm between adjacent bumps, was used.

[0643] Based on the above operations, a laminated structure is obtained by attaching a protective layer to the bump forming surface of a wafer used for semiconductor chip fabrication.

[0644] Next, as a process (C1-2), with a protective layer laminate formed on the bump forming surface, the side of the semiconductor wafer opposite to the bump forming surface is ground.

[0645] Here, the bump forming side of a semiconductor chip fabrication wafer with a protective layer forming laminate attached is fixed to a chuck stage, and the back side of the semiconductor chip fabrication wafer is ground using a grinding and polishing machine (DISCO Corporation "DGP8761"). The thickness of the semiconductor chip fabrication wafer after grinding is 200 μm.

[0646] Next, as a process (C1-3), a BG tape peeler (Lintec Corporation "RAD-3010F / 12") is used to peel the support sheet from the protective layer forming laminate, thereby forming a curable resin layer on the bump forming surface.

[0647] Next, as step (C2), the curable resin layer formed on the bump forming surface of the wafer for semiconductor chip fabrication is cured to form a protective layer. Here, the curable resin layer is cured by heat treatment in a pressure oven (RAD-9100 manufactured by Lintec Corporation) under heating conditions of 130°C, 2 hours, and 0.5 MPa.

[0648] Next, as a process (CX) before being supplied to the subsequent process (C3), an exposure process is performed to remove the protective layer covering the top of the bump, thereby exposing the top of the bump. Specifically, plasma etching (plasma cleaning) is performed under the following conditions.

[0649] • Processing gas: carbon tetrafluoride

[0650] • Gas flow rate: 40 cm³ 3 / min

[0651] • Handling pressure: 100Pa

[0652] • Output power: 250W

[0653] Processing time: 15 minutes

[0654] • Blowing: 1 time

[0655] Next, as a process (C3), a multi-functional wafer bonding machine (RAD-2510F / 12 manufactured by Lintec Corporation) is used to place a semiconductor chip manufacturing wafer with a protective layer on a dicing tape and cut it from the bump formation side to achieve monolithization, thereby obtaining a semiconductor chip with the bump formation surface protected by the protective layer.

[0656] Next, as a process (E1), using a laminate for forming a coating wafer as described below, semiconductor chips are placed one by one on the coating wafer to form bumps and the bump forming surfaces are covered by the coating wafer.

[0657] <Preparation of the composition for forming the embedded layer>

[0658] Add 100 parts by weight of a solution (33.6% by weight of solids) of an acrylic copolymer (weight average molecular weight (Mw) 400,000) formed from 90 parts by weight of n-butyl acrylate (BA) and 10 parts by weight of acrylic acid (AAc), and then mix 2-methacryloyloxyethyl isocyanate with an acrylic copolymer formed from 62 parts by weight of n-butyl acrylate (BA), 10 parts by weight of methyl methacrylate (MMA), and 28 parts by weight of 2-hydroxyethyl acrylate (HEA) to achieve the desired effect. An intercalation layer forming composition was prepared by stirring for 30 minutes in a solution (45% by weight of solids) of a resin (weight average molecular weight (Mw) 100,000) obtained by adding methyl ethyl isocyanate to 2-hydroxyethyl acrylate (HEA) at an addition rate of 80 mol% to 100 mol% of HEA.

[0659] <Preparation of Compositions for Forming Adhesive Layers>

[0660] A solution (adhesive base, solids content 35% by mass) of a resin formed by adding 2-methacryloyloxyethyl isocyanate (approximately 50 mol% relative to HEA) to an acrylic copolymer formed from 74 parts by mass of n-butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA), and 6 parts by mass of 2-hydroxyethyl acrylate (HEA) was prepared. An adhesive layer forming composition was prepared by adding 0.5 parts by mass of toluene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solids content concentration: 37.5%) as a crosslinking agent to 100 parts by mass of this adhesive base and stirring for 30 minutes.

[0661] <Manufacturing of Adhesive Layers>

[0662] The adhesive layer forming composition was applied to the release-treated side of a release film ("SP-PET381031", manufactured by Lintec Co., Ltd., with a thickness of 38 μm) that had undergone release treatment by silicone treatment on one side of a polyethylene terephthalate film, and then heated and dried at 100°C for 1 minute, thereby producing an adhesive layer with a thickness of 20 μm.

[0663] <Manufacturing Method of Laminated Sheets for Coating>

[0664] Similar to Example 1 described in International Publication 2020 / 032175, a laminate for forming an encapsulating sheet was manufactured as follows. Details are as follows.

[0665] An intercalation layer forming composition was applied to the release-treated side of a release film (Lintec Co., Ltd. "SP-PET381031", thickness 38 μm) that had undergone release treatment by silicone treatment on one side of a polyethylene terephthalate film. After heating and drying at 100°C for 1 minute, the release-treated side of a release film (Lintec Co., Ltd. "SP-PET382150", thickness 38 μm) that had undergone release treatment by silicone treatment on one side of a polyethylene terephthalate film was laminated onto the intercalation layer forming composition to produce an intercalation layer with a thickness of 50 μm.

[0666] The surfaces obtained by peeling off the release film after lamination of the above-mentioned embedded layers were bonded together to create an embedded layer with a thickness of 100 μm. Similarly, the embedded layers were bonded and stacked to create an embedded layer with a thickness of 300 μm.

[0667] A 300 μm thick embedding layer was bonded to a 20 μm thick adhesive layer to create a fabrication. Figure 8 The form shown is a laminate 81 for forming a coating sheet having a viscoelastic layer 82 with a thickness of 320 μm.

[0668] The release film 85 on one side of the embedded layer 83 of the laminate 81 for forming the cover sheet is peeled off, and a cover sheet having a substrate / embedded layer 83 / adhesive layer 84 / release film 86 is manufactured and bonded to the easily bonded side of a polyethylene terephthalate (PET) film (product name "COSMOSHINE A4100", thickness 50μm, manufactured by Toyobo Co., Ltd.) as the substrate. The bump forming surface is pressed onto the cover sheet after the release film 86 has been peeled off with a pressing pressure (load 1.1MPa), a pressing time of 40s, and a heating time of 50°C.

[0669] Next, as step (A), a shielding layer made of copper is formed on a semiconductor chip whose bump forming surface is protected by a protective layer formed by a cured product of a curable resin under the following conditions.

[0670] Target material: Copper

[0671] Method: DC magnetron sputtering

[0672] Application method: DC 500W

[0673] • Substrate heating: 150℃

[0674] Carrier gas: Argon

[0675] • Film-forming pressure: 3.4 Pa

[0676] Finally, as step (B), the semiconductor chip with the shielding layer is picked up, the covering sheet is peeled off from the bumps and the semiconductor wafer, and the semiconductor chip covered by the shielding layer is removed.

[0677] (Example 2)

[0678] Instead of performing the steps (C1-1), (C1-2), (C1-3), (C2), (CX), (C3), (E1), (A), and (B) sequentially as in the first embodiment in Example 1, the steps (C1-1), (C1-2), (C1-3), (C2), (CX), (C3), (E2), (F), (A), and (B) were performed sequentially as in the second embodiment. Except for this, the semiconductor device was manufactured in the same manner as in Example 1, and the bump formation surface was observed.

[0679] As a result, no conductive material was present on the bump forming surface or on the bump itself.

[0680] It should be noted that processes (C1-1), (C1-2), (C1-3), (C2), (CX), (C3), (A), and (B) are performed in the same manner as in Example 1. Processes (E2) and (F), which differ from those in Example 1, will be described in detail below.

[0681] As in step (E2), a semiconductor chip is placed onto a coating sheet in one go to form bumps and the bump formation surface is covered by the coating sheet. Step (E2) is performed in the same way as step (E1) except that the semiconductor chips are placed in one go instead of one by one. In addition, instead of the polyethylene terephthalate (PET) film (product name "COSMOSHINE A4100", thickness 50μm, manufactured by Toyobo Co., Ltd.) of Example 1, a polyester polyurethane elastomer sheet (manufactured by Sheedom Co., Ltd., product name "Higress DUS202", thickness 50μm) is used as the substrate for the coating sheet.

[0682] As step (F), a wafer expansion device is used to expand the coating wafer on which semiconductor chips are mounted along the arrangement direction of the semiconductor chips.

[0683] (Example 3)

[0684] Instead of performing the steps (C1-1), (C1-2), (C1-3), (C2), (CX), (C3), (E1), (A), and (B) sequentially as in the first embodiment in Example 1, the steps (C1-1), (C1-2), (C1-3), (C2), (CX), (C3), (F), (A), and (B) were performed sequentially as in the third embodiment. Except that, the semiconductor device was manufactured in the same manner as in Example 1, and the bump formation surface was observed.

[0685] As a result, no conductive material was present on the bump forming surface or on the bump itself.

[0686] It should be noted that processes (C1-1), (C1-2), (C1-3), (C2), and (CX) are performed in the same manner as in Example 1. Process (C3) is a process of cutting the bumped wafer with a protective layer formed from the opposite side of the bump formation surface to achieve monolithic wafer formation. Apart from this, processes (C3) in Example 2 (i.e., process (C3) in Example 1) are performed in the same manner as in Example 2. Processes (F), (A), and (B) are also performed in the same manner as in Example 2. In addition, in process (C3) of Example 3, the coating sheet used in Example 2 is used as the dicing strip, and the bump formation surface side of the semiconductor wafer is placed on the dicing strip (coating sheet) in a manner in which the coating sheet, as the dicing strip, covers the bump formation surface.

[0687] (Example 4)

[0688] The same as in the fourth embodiment, steps (C4), (C5), (C6), (CY), (C7), (CX), (C8), (E1), (A), and (B) were performed sequentially. Detailed descriptions follow.

[0689] It should be noted that, in order to confirm the presence of conductive material on the bump-forming surface, the bump-forming surface was observed using an optical microscope (KEYENCE, model: VHX-1000). The results showed that no conductive material was present on the bump-forming surface or on the bumps themselves.

[0690] First, as step (C4), a semiconductor chip fabrication wafer is prepared in which a groove portion with predetermined dividing lines is formed on the bump forming surface in a manner that does not reach the surface opposite to the bump forming surface. The semiconductor chip fabrication wafer is a 12-inch silicon wafer (wafer thickness 775 μm) that has been half-cut. The width of the half-cut portion (groove width) of the silicon wafer is 200 μm, and the depth of the groove is 200 μm.

[0691] Next, as step (C5), the bump forming surface of the semiconductor chip fabrication wafer is coated with a curable resin, and the curable resin is embedded in the groove formed on the semiconductor chip fabrication wafer. Detailed explanation follows.

[0692] A laminate consisting of a support sheet (manufactured by Lintec Corporation, "E-8510HR") and a 90μm thick curable resin layer is pressed and bonded to the surface side (half-cutting surface) of a wafer used for semiconductor chip fabrication under the following conditions, with the curable resin side as the bonding surface.

[0693] • Lamination device: Fully automatic vacuum laminator (manufactured by Lintec Corporation, product name "RAD-3810")

[0694] ·Vacuum degree: 0.1kPa

[0695] • Adhesion pressure 1: 10.00 kPa

[0696] • Adhesion pressure 2: 90.00 kPa

[0697] • Fitting time: 60 seconds

[0698] • Bonding speed: 4mm / sec

[0699] • Bonding temperature: 100℃

[0700] It should be noted that the curing resin in the curing resin layer is manufactured using a thermosetting resin composition.

[0701] The components used in the preparation of the thermosetting resin composition are shown below.

[0702] • Polymer components

[0703] Polymer composition: An acrylic resin (weight average molecular weight 800,000, glass transition temperature -28°C) copolymerized from 55 parts by weight of butyl acrylate (BA), 10 parts by weight of methyl acrylate (MA), 20 parts by weight of glycidyl methacrylate (GMA), and 15 parts by weight of 2-hydroxyethyl acrylate (HEA).

[0704] · Epoxy resin

[0705] Epoxy Resin 1: Liquid bisphenol F type epoxy resin (manufactured by Mitsubishi Chemical Corporation, "YL983U"); weight average molecular weight = 340

[0706] Epoxy Resin 2: Multifunctional aromatic epoxy resin (manufactured by Nippon Kayaku Co., Ltd., "EPPN-502H"); weight average molecular weight = 1,000

[0707] Epoxy Resin 3: Dicyclopentadiene type epoxy resin (manufactured by DIC Corporation, "EPICLON HP-7200"); weight average molecular weight = 600

[0708] Thermosetting agent

[0709] Thermosetting agent: Phenolic varnish type phenolic resin (manufactured by Showa Denko Co., Ltd., "BRG-556")

[0710] • Curing accelerator

[0711] Curing accelerator: 2-Phenyl-4,5-dihydroxymethylimidazolium (manufactured by Shikoku Chemical Industry Co., Ltd., "CUREZOL2PHZ-PW")

[0712] • Filling material

[0713] Filler: Epoxy-modified spherical silica (Admatechs "Adamano YA050C-MKK"); 0.05 μm (average particle size); 19% by mass (content in the thermosetting resin composition).

[0714] A thermosetting resin composition with a solid content of 55% by mass was prepared by dissolving or dispersing 100 parts by mass of polymer components, 135 parts by mass of epoxy resin 1, 90 parts by mass of epoxy resin 2, 150 parts by mass of epoxy resin 3, 180 parts by mass of thermosetting agent, 1 part by mass of curing accelerator, and 160 parts by mass of filler in methyl ethyl ketone and stirring at 23°C.

[0715] The thermosetting resin composition obtained above was applied to the release-treated side of a release film ("SP-PET381031", manufactured by Lintec Co., Ltd., with a thickness of 38 μm) that had undergone release treatment by silicone treatment on one side of a polyethylene terephthalate film. The film was then heated and dried at 100°C for 2 minutes to produce a thermosetting resin film with a thickness of 90 μm as a curing resin.

[0716] Next, the exposed surface of the curable resin is attached to the exposed surface of the adhesive layer of the support sheet, resulting in a laminate composed of the support sheet, the curable resin, and the release film stacked sequentially in their thickness direction.

[0717] When this laminate is bonded to a wafer used in semiconductor chip fabrication, the release film is peeled off from the laminate to expose the curable resin before use.

[0718] Next, as step (C6), a grinding and polishing machine (DISCO Corporation, "DGP8761") is used to grind the back side of the semiconductor chip manufacturing wafer, opposite to the bump formation surface, while the laminate is in place. Next, as step (CY), a BG tape peeler (LINDECO Corporation, "RAD-3010F / 12") is used to peel the support sheet from the laminate.

[0719] Next, as step (C7), the curable resin is cured to obtain a semiconductor chip wafer with a cured resin film as a protective layer. Here, the curable resin layer is cured by heat treatment in a pressure oven (RAD-9100 manufactured by Lintec Corporation) under heating conditions of 130°C, 2 hours, and 0.5 MPa.

[0720] Next, as a process (CX) before being supplied to the subsequent process (C8), an exposure process is performed to remove the protective layer covering the top of the bump, thereby exposing the top of the bump. Specifically, plasma etching (plasma cleaning) is performed under the following conditions.

[0721] • Processing gas: carbon tetrafluoride

[0722] • Gas flow rate: 40 cm³ 3 / min

[0723] • Handling pressure: 100Pa

[0724] • Output power: 250W

[0725] Processing time: 15 minutes

[0726] • Blowing: 1 time

[0727] Next, as a process (C8), a multi-functional wafer bonding machine (Lintec Corporation "RAD-2510F / 12") is used to place a semiconductor chip manufacturing wafer with a protective layer on a dicing tape. The portion of the cured resin film of the semiconductor chip manufacturing wafer with the cured resin film as a protective layer formed in the groove is cut from the bump forming surface side along a predetermined dividing line, thereby achieving monolithization.

[0728] Furthermore, processes (E1), (A), and (B) are performed in the same manner as in Example 1.

[0729] (Example 5)

[0730] Instead of performing steps (C4), (C5), (C6), (CY), (C7), (CX), (C8), (E1), (A), and (B) sequentially as in the fourth embodiment in Example 4, steps (C4), (C5), (C6), (CY), (C7), (CX), (C8), (E2), (F), (A), and (B) sequentially were performed sequentially as in the fifth embodiment. Except for this, a semiconductor device was manufactured in the same manner as in Example 4, and the bump formation surface was observed.

[0731] As a result, no conductive material was present on the bump forming surface or on the bump itself.

[0732] It should be noted that processes (C4) to (C8) are performed in the same manner as in Example 4, and processes (E2), (F), (A), and (B) are performed in the same manner as in Example 2.

[0733] (Example 6)

[0734] Instead of performing steps (C4), (C5), (C6), (CY), (C7), (CX), (C8), (E1), (A), and (B) sequentially as in the fourth embodiment in Example 4, the sixth embodiment performed steps (C4), (C5), (C6), (CY), (C7), (CX), (C8), (F), (A), and (B) sequentially. Except for this, the semiconductor device was manufactured in the same manner as in Example 4, and the bump formation surface was observed. It should be noted that, here, as in Example 3, the wafer with bumps and a protective layer formed was cut from the opposite side of the bump formation surface and monolithically assembled.

[0735] As a result, no conductive material was present on the bump forming surface or on the bump itself.

[0736] It should be noted that processes (C4) to (CX) are performed in the same manner as in Example 4, and process (C8) is a process of cutting from the opposite side of the bump formation surface to form a single wafer. Otherwise, process (C8) is performed in the same manner as in Example 5 (i.e., process (C8) of Example 4), and processes (F), (A), and (B) are performed in the same manner as in Example 5. In addition, in process (C8) of Example 6, the coating sheet used in Example 5 is used as the dicing strip, and the bump formation surface side of the semiconductor wafer is placed on the dicing strip (coating sheet) in a manner in which the coating sheet, as the dicing strip, covers the bump formation surface.

[0737] Industrial applicability

[0738] This invention can be used in the manufacture of semiconductor devices, such as those with bumps on the bonding pads, which can be used in flip-chip mounting methods. Furthermore, this invention can also be used in the manufacture of packages, fanouts, and the like.

Claims

1. A method for manufacturing a semiconductor device, comprising steps (A) and (B) below, and further comprising a step (C') for fabricating a semiconductor chip, said step (C') comprising steps (C4) to (C8) below. Process (A): A process of forming a shielding layer on a semiconductor chip in which the bump forming surface of a semiconductor wafer with bumps is protected by a protective layer, the protective layer being formed from a cured product of a curable resin. In this process (A), with at least one of the bumps and the bump forming surface covered by a covering sheet, a shielding layer is formed on at least a portion of the semiconductor chip exposed from the covering sheet. • Process (B): After the shielding layer is formed on the semiconductor chip in process (A), the process of peeling the covering sheet from at least either the bump or the semiconductor wafer; • Process (C4): A process for preparing a wafer for semiconductor chip fabrication, wherein the wafer for semiconductor chip fabrication has a groove as a predetermined dividing line formed on the bump forming surface in such a way that it does not reach the surface opposite to the bump forming surface; • Process (C5): A process of covering the bump forming surface of the semiconductor chip fabrication wafer with the curable resin and embedding the curable resin into the groove formed on the semiconductor chip fabrication wafer; • Process (C6): A process of grinding the surface of the wafer used for manufacturing the semiconductor chip that is opposite to the bump forming surface; • Process (C7): A process of curing the curable resin to obtain a wafer for manufacturing a semiconductor chip with a protective layer; • Process (C8): A process of monolithically processing the semiconductor chip wafer with the protective layer along the predetermined dividing line to obtain a semiconductor chip whose bump forming surface and side surface are protected by the protective layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process (C8), the protrusion is cut from the protrusion forming surface side to achieve monolithic processing.

3. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process (C8), the protrusion is cut from the opposite side of the protrusion forming surface to achieve monolithization.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, further comprising the following step (E1), • Process (E1): A process in which the semiconductor chips are placed one by one on the cover sheet to form a state in which at least one of the bumps and the bump forming surfaces is covered by the cover sheet.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, further comprising the following step (E2), • Process (E2): A process in which the semiconductor chip is placed on the cover sheet in one step to form a state in which at least one of the bumps and the bump forming surfaces is covered by the cover sheet.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, further comprising the following step (F), • Process (F): A process of expanding the coating wafer on which the semiconductor chip is mounted.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, further comprising the following steps (G) to (I), • Process (G): The process of placing the semiconductor chip on the expansion strip; • Process (H): The process of expanding the expansion strip on which the semiconductor chip is mounted; • Process (I): The process of transferring the semiconductor chip placed on the expansion strip to the coating sheet.

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