Tool for handling substrates with an overhead shield, and related handling method and epitaxial reactor

Abstract

A tool (4000) for handling substrates (3000) comprises a fork (4100); the fork (4100) comprises two arms (4120, 4140) configured to directly or indirectly clamp or support one or more substrates (3000) by contact exerting lateral and / or vertical forces when in use; a shield (4500) is provided, which is fixed or fixable to the fork (4100) so as to overhang the substrates (3000) at a distance when in use, when the substrates (3000) are clamped or supported by the fork (4100).

Description

Technical Field

[0001] The present invention relates to tools and related manipulation methods for manipulating substrates having an overhead screen, and epitaxial reactors using them.

[0002] The premise is that, generally speaking, the tool according to the invention can contact the substrate, i.e., so-called "direct manipulation," or can contact the substrate support element, i.e., so-called "indirect manipulation." The most typical embodiment of the invention is designed for "indirect manipulation." Background Technology

[0003] In a known epitaxial reactor, the substrate to be processed is introduced into the reaction chamber, then processed at high temperature (the process includes epitaxial deposition of semiconductor material onto the substrate), and finally the processed substrate is removed from the reaction chamber.

[0004] Depending on the circumstances, particularly the substrate and semiconductor materials to be deposited, the processing temperature can vary, for example from 600°C (or even lower) to 1700°C (and even higher); the processing temperature also generally depends on the pressure inside the chamber during processing. The outside temperature, especially the "storage" temperature in the epitaxial reactor, is the ambient temperature, typically between 20°C and 30°C. Summary of the Invention

[0005] To reduce processing time, particularly reactor cycle time, it is advantageous to introduce the substrate while the chamber is already quite hot (i.e., much higher than ambient temperature) and / or remove the substrate while the chamber is still quite hot (i.e., much higher than ambient temperature); this way, the chamber temperature can always be kept quite high (i.e., not much lower than the processing temperature). For example, if considering the epitaxial deposition of monocrystalline silicon carbide on a silicon carbide substrate at a pressure of 50 mbar to 200 mbar, the processing temperature can be 1500°C to 1700°C, and it would be advantageous to introduce and / or remove the substrate when the chamber temperature is in the range of, for example, 700-1100°C (or even higher).

[0006] However, doing so would subject the substrate to thermal shock. In fact, during the introduction step, the substrate temperature changes rapidly within a short time (e.g., a few seconds), from 25°C to 900°C, and during the removal step, the substrate temperature changes rapidly within a short time (e.g., a few seconds), from 900°C to 25°C. Such thermal shock can cause problems with the substrate, particularly damage. It should be noted that thermal shock essentially affects the upper surface of the substrate, i.e., the exposed surface, and causes a temperature difference between the upper and lower surfaces of the substrate.

[0007] The overall objective of this invention is to overcome the aforementioned problems.

[0008] The objective is achieved by methods, tools, and epitaxial reactors having the technical features defined in this invention.

[0009] The idea behind this invention is to provide a tool with a shield that, in use, is positioned to hang over the substrate when the substrate is manipulated by the tool. Attached Figure Description

[0010] According to the appendix Figure 1 The invention will become more apparent from the following detailed description, in which: Figure 1 A schematic diagram (which can be considered a top view) of an embodiment of the epitaxial reactor according to the present invention is shown. Figure 2A It shows Figure 1 A schematic top view of an embodiment of the "substrate support device" for an epitaxial reactor. Figure 2B It shows Figure 2A A schematic cross-sectional view of the "substrate support device". Figure 3 (Illustrative) shows Figure 1 An example of a robot for an epitaxial reactor. Figure 4A It shows that it can be used Figure 1 A three-dimensional view of an embodiment of the tool according to the invention in an epitaxial reactor. Figure 4B Shown in exploded 3D view Figure 4A Tools, Figure 4C Shown in a planar side view Figure 4A Tools, Figure 5 It shows the introduction Figure 1 Possible time-series diagrams of substrate temperature during the process in the reaction chamber of the epitaxial reactor, and Figure 6 It shows that from Figure 1 Possible timing diagram of substrate temperature during the removal process of the reaction chamber in the epitaxial reactor.

[0011] It will be readily understood that there are various ways in which the invention can be practically implemented, and that the invention is defined in the appended claims as having its main advantages, and is not limited to the following detailed description or the appended claims. Detailed Implementation

[0012] refer to Figure 1An embodiment of the epitaxial reactor 1000 according to the present invention includes a so-called "processing component" 900.

[0013] exist Figure 1 The diagram shows an electronic control unit 800, which, based on its function, can be considered part of the epitaxial reactor 1000, i.e., part of the entire system, or part of the processing component 900 (i.e., its subsystem). Generally, an epitaxial reactor may include several electronic control units, each dedicated to controlling one or more subsystems. Figure 1 In the example, the electronic control unit 800 is arranged to at least control the processing component 900, and for this purpose, receives electrical signals from and sends electrical signals to components of the processing component 900 (this is schematically represented by two large black arrows).

[0014] Generally, an epitaxial reactor, including the epitaxial reactor according to the present invention, includes a control console, which can also be considered as part of the control unit of the epitaxial reactor.

[0015] Processing component 900 includes four basic parts: - Reaction chamber 100 for processing the substrate - Transfer chamber 200 adjacent to reaction chamber 100, - The "load-lock" chamber 300 adjacent to the transfer chamber 200, and - Loading / unloading chamber 400 adjacent to “Loading-Locking” chamber 300.

[0016] It should be noted that, alternatively, chambers 200 and 300 may be integrated and constitute a single chamber.

[0017] exist Figure 1 In the example, room 300 is located inside room 400.

[0018] Generally, epitaxial reactors include so-called "gate valves," which are suitable for selectively dividing the reaction chamber. Figure 1 For the reactor, a first “gate valve” 120 is provided between chamber 100 and chamber 200, and a second “gate valve” (not shown in the figure) is provided between chamber 200 and chamber 300; in addition, a door (not shown in the figure) is provided, preferably hermetically sealed, to allow an operator to access the interior of chamber 400 and place / remove substrates and substrate support devices.

[0019] Processing component 900 also includes Figure 1The symbols used are "external robot" 600 and "internal robot" 500; robot 600 is used to transfer processed substrates, unprocessed substrates and substrate support devices without substrates between loading / unloading chamber 400 and loading-locking chamber 300; robot 500 is used to transfer substrate support devices with one or more substrates between loading-locking chamber 300 and reaction chamber 100 via transfer chamber 200.

[0020] exist Figure 1 In the reactor, the substrate is placed on the "substrate support device" before the processing and removed from the "substrate support device" after the processing; both operations are performed by the robot 600.

[0021] exist Figure 1 In the reactor, before the processing, a support device with an untreated substrate is transferred from the loading-locking chamber 300 to the reaction chamber 100, and after the processing, the same support device with a treated substrate is transferred from the reaction chamber 100 to the loading-locking chamber 300; these two transfer operations are performed by a robot 500.

[0022] The processing assembly 900 may optionally include a cooling station 210 adjacent to the transfer chamber 200; the cooling station 210 is adapted to accommodate a substrate support device having one or more substrates after the processing.

[0023] The processing assembly 900 may also include a preheating station 220 adjacent to the transfer chamber 200 (optional); the heating station 220 is adapted to accommodate a substrate support device having one or more substrates prior to the processing.

[0024] The loading-locking chamber 300 includes a base 310 for supporting a "substrate support device" (with or without a substrate).

[0025] The loading / unloading chamber 400 has at least a first storage area 410 for processed and unprocessed substrates and at least a second storage area 420 for substrate support devices without substrates.

[0026] As mentioned above, in Figure 1 In the reactor, it is advantageous to provide the use of a “substrate support device”; this is a flat tray (especially circular) with one or more grooves for receiving one or more substrates to be processed, typically provided with radially projecting edges suitable for being clamped or supported.

[0027] Figures 2A-2B The "substrate support device" 2000 has a so-called "pocket" groove 2100, which is (almost) circular in shape to accommodate a substrate (not in the same shape and size as the groove) Figure 2A As shown in the text, but Figure 2B (represented by 3000 in the original text), and the "substrate support device" 2000 has a thin edge 2200 that projects radially along its entire periphery to facilitate manipulation of the "substrate support device". Specifically, Figures 2A-2B This refers to a situation where the substrate has a so-called "flat portion" and the element 2300 can be located in the "flat portion" within the groove 2100; in practice, the element 2300 is typically integrated into the device 2000.

[0028] Figures 2A-2B The "substrate support device" 2000 can also be described by the following set of parts (see in particular). Figure 2B It includes a circular, plate-like portion, simply referred to as "plate" 2500, which has a resting surface suitable for supporting substrate 3000; specifically, the resting surface has a shape and size substantially the same as the substrate and forms the bottom of recess 2100. Plug 2300 (if present) is conceptually superimposed on plate 2500. Device 2000 also includes a first edge portion 2600 that completely surrounds plate 2500 and extends axially to form a sidewall of recess 2100 (a small portion of which is formed by plug 2300). Device 2000 ultimately includes a second edge portion 2700 that completely surrounds first edge portion 2600 and extends radially; the second edge portion 2700 can be described as a flange located around first edge portion 2600. Typically, plate 2500 is at a lower level than second edge portion 2700. Edge 2200 substantially corresponds to second edge portion 2700. It should be noted that the aforementioned portions can be linked to form one or more individual pieces; for example, portions 2500, 2600, and 2700 can form a single piece, or portion 2500 can form a first single piece and portions 2600 and 2700 can form a second single piece. Furthermore, it should be noted that each of the aforementioned portions can be formed from two or more single pieces mechanically joined together; an example relating to plate 2500 is described below.

[0029] The internal robotic arm 500 may include a hinged arm 510 adapted to manipulate a substrate support device. The external robotic arm 600 may be similar to the internal robotic arm 500.

[0030] The articulated arm 510 includes a first arm member 512 and a second arm member 516, the first arm member 512 being hinged to the second arm member 516, the first arm member 512 having a first end 513 adapted to manipulate the "substrate support device" and a second end 514 hinged to the second arm member 516.

[0031] The articulated arm 510 may also include a base 520.

[0032] The articulated arm 510 may also include a lifting column 511 mounted on the base 520.

[0033] The articulated arm 510 may also include a third arm member 517, which is hinged at a first end to the second arm member 516 and at a second end to the lifting column 511.

[0034] The first arm member 512 may include or be associated with a so-called "end effector" 515, which is typically located at a first end 513 and is adapted to clamp a "substrate support device"; according to Figure 3 In a typical and advantageous embodiment, the "end actuator" 515 includes a "two-tipped fork".

[0035] An embodiment of the tool 4000 according to the present invention (which can be used) Figure 1 In the epitaxial reactor) Figures 4A to 4C This is illustrated in detail. It should be noted that this embodiment of the tool... Figure 3 The combination of the portion corresponding to the arm member 512 connected to the "end effector" 515.

[0036] basically, Figures 4A to 4C The tool 4000 includes a shield 4500, which is positioned such that when the tool 4000 manipulates the support element 2000 (with one or more resting substrates), it hangs at a distance (in particular at a uniform distance, as will be clear below) over one or more substrates 3000 placed on the support element 2000.

[0037] like Figures 4A to 4C As shown, tool 4000 includes a fork 4100 fixed to the end of a rod-shaped member. Fork 4100 has two arms 4120 and 4140 for directly clamping or supporting substrate support element 2000 (only when...). Figure 4B and Figure 4C (See) In particular, arms 4120 and 4140 have an “L” shaped cross section, such that each “L” shaped handle can position itself below edge 2200 or 2700 (one on one side and one on the other side).

[0038] Generally, the tool according to the invention is configured in such a way that, in use, it achieves a clamping or supporting effect (on the substrate or support element) by applying lateral and / or vertical forces through contact (particularly by applying an upward-pointing vertical force from below). According to a preferred embodiment, contact occurs only between the fork arm and the substrate (particularly its edge and / or its lower surface) or between the fork arm and the substrate support element (particularly its edge and / or its lower surface).

[0039] Preferably, the fork 4100 is made of quartz to withstand high temperatures.

[0040] Generally, the shielding is fixed or can be fixed to the fork, especially to the fork arms; in addition, the fork, especially its two arms, can be configured to allow for fixing.

[0041] Figures 4A to 4C The shielding element 4500 includes a slab 4510, particularly a flat slab, which is preferably adapted to be in a horizontal position when the substrate is held or supported by a tool 4000, particularly a fork 4100, and in a horizontal position; in this case, the distance between the upper surface of the substrate and the lower surface of the flat slab (which hangs over the substrate) is preferably uniform. It should be noted that the slab of the shielding element may also have recesses, at least at the substrate.

[0042] according to Figures 4A to 4C In one embodiment, when the substrate is placed on the element 2000, the substrate is indirectly clamped or supported by the tool 4000; according to an alternative (but less typical) embodiment, the substrate may be directly clamped or supported.

[0043] Specifically, the plate-shaped member 4510 is secured to the arms 4120 and 4140 by elements of the shield 4500 (not shown in the figure), for example (separate elements may be provided to prevent the plate-shaped member 4510 from moving forward / backward (i.e., longitudinally) relative to the fork 4100 and to prevent the plate-shaped member 4510 from moving to the right / left (i.e., laterally) relative to the fork 4100); preferably, the plate-shaped member 4510 and the element 2000 (and the substrate supported by the support element, if present) are substantially parallel to each other and placed at a small distance, for example, in the range of 3 mm to 10 mm.

[0044] The shield (which does not contact the substrate) can be adapted to store heat in a way that reduces thermal shock, or more precisely, to prevent the underlying substrate (when in use) from heating by preventing radiative heat transfer.

[0045] The shielding element (not in contact with the substrate) can be adapted to shield the underlying substrate (when in use) from infrared radiation by impeding heat transfer via conduction and / or convection. It is worth noting that for the most typical application of this invention (for epitaxial reactors for depositing semiconductor materials, particularly silicon and silicon carbide, on substrates between 600°C and 1700°C), heat transfer via radiation primarily involves the infrared range, but also occurs to some extent in the visible light range.

[0046] Graphite is a particularly ideal material for shielding components, especially for flat, plate-like components. Thicknesses particularly suitable for plate-like components range from 1.5 mm to 3.5 mm.

[0047] according to Figures 4A to 4CIn this embodiment, the fork and the shield are two separate components and are made of different materials. However, other embodiments are not excluded. For example, the fork and the shield can be integrated into a single mechanical component, or they can be integrated into two components connected together; such a component can be made of graphite; alternatively, such a component can be made of quartz, and for example, the fork can be transparent quartz while the shield can be opaque quartz, and they are welded together.

[0048] In the following description, for simplicity, it is assumed that the tool 4000 mechanically engages and disengages from the support element 2000 in a very short and negligible time.

[0049] However, this operation takes some time (e.g., a few seconds) and can be referenced. Figures 4A to 4C The tools in the document are described below.

[0050] To achieve engagement, the fork approaches the support element, and then the fork arm slides (forward) under the edge of the support element until the fork arm reaches the desired end position; as the arm slides, the shield gradually covers any substrate placed on the support element. Then, the fork is slightly lifted, and the fork arm rests under the edge of the support element (at this position, it can be considered that the fork has clamped the support element); again, the arm pushes down on the edge and lifts the support element.

[0051] In order to disengage, the forks (in the desired end position described above, i.e., where they hold the support element) are lowered slightly so as not to rest under the edge of the support element, and then slid under the edge (backward) until they disengage from the support element, and finally the forks move away from the support element; as the arms slide, the shield gradually no longer covers any substrate placed on the support element.

[0052] The process described below can typically and advantageously be performed using the tools described herein.

[0053] The substrate introduction process according to the present invention may include, for example, the following steps (e.g., considering...) Figure 1 and Figure 5 ): I1) Adjust the internal temperature of the reaction chamber 100 to a predetermined temperature below the processing temperature (typically before the process begins). I2) Position the tool 4000, which is provided with the shield 4500, at the support element 2000 having the substrate to be processed, such that the shield 4500 hangs over the substrate to be processed (e.g., this can happen in the loading-locking chamber 300). I3) Use tool 4000 to clamp support element 2000. I4) Open the entrance hatch 120 of reaction chamber 100. I5) Move the tool 4000 with the support element 2000 until the support element 2000 is inside the reaction chamber 100 (see reference numeral 110). I6) Place the support element 2000 in the reaction chamber 100. I7) Move the tool 4000 without the support element 2000 until the tool 4000 is outside the reaction chamber 100 (see reference numeral 200). I8) Close the entrance hatch 120 of the reaction chamber 100, and I9) Adjust the internal temperature of the reaction chamber 100 to the processing temperature.

[0054] At this point, the actual processing can begin.

[0055] exist Figure 5 In the diagram, time ti1 corresponds to the time during step I5 when the tool 4000 with the substrate faces the entrance of the reaction chamber 100 (just outside the reaction chamber 100) and is about to enter; the tool 4000, the element 2000 and the substrate are at a temperature Ti1 corresponding to the ambient temperature, typically between 20°C and 30°C, for example 25°C.

[0056] exist Figure 5 In the chart, there is a temperature Ti3, which corresponds to the predetermined temperature mentioned above. For example, if the processing temperature is 1600-1700°C, then the temperature Ti3 is typically between 700°C and 1100°C, such as 900°C.

[0057] Time ti2 corresponds to the time during step I7 when the tool 4000 without the substrate has just left the reaction chamber 100 and the shield 4500 is no longer hanging on the substrate; at approximately time ti2, the hatch 120 is closed.

[0058] During the time interval between time ti1 and time ti2, the substrate undergoes heating; this heating is slowed down by the presence of the shield 4500 above the substrate; thus, thermal shock is reduced. At time ti2, the substrate reaches a temperature Ti2 that is typically below temperature Ti3, for example, equal to 60% to 80% of temperature Ti3 in degrees Celsius, i.e., Ti2 = [0.6 to 0.8]. Ti3.

[0059] During the time interval between time ti2 and time ti3, the substrate undergoes further heating; this further heating will not be a source of thermal shock because the temperature difference between the chamber and the substrate is relatively small.

[0060] According to a typical example, the time interval between time ti1 and time ti2 can be 20-60 seconds.

[0061] According to a typical example, the time interval between time ti2 and time ti3 can be 10-20 seconds.

[0062] It should be noted that the heating of reaction chamber 100 to perform the processing can begin at time ti2, for example, by reactivating the reactor's heating system. However, such reactivation has limitations. Figure 5 The graph has almost no effect (especially at time ti3), because the interval between ti2 and ti3 is about 10 seconds, while the response time of the reactor's heating system is about one minute (in other words, it takes several minutes to heat the chamber and its contents, for example, from 900°C to 1650°C).

[0063] The substrate removal process according to the present invention may include, for example, the following steps (e.g., considering...) Figure 1 and Figure 6 ): E1) Adjust the internal temperature of the reaction chamber 100 to a predetermined temperature below the processing temperature (typically after the processing is complete). E2) Open the entrance hatch 120 of reaction chamber 100. E3) Position the tool 4000, on which the shield 4500 is provided, until the tool 4000 is inside the reaction chamber 100 (see reference numeral 110), and at the support element 2000 with the treated substrate, such that the shield 4500 hangs over the treated substrate. E4) Use tool 4000 to clamp support element 2000. E5) Move the tool 4000 with the support element 2000 until the tool 4000 is outside the reaction chamber 100 (see reference numeral 200 in the attached drawing), and E6) Close the entrance hatch 120 of the reaction chamber 100.

[0064] At this point, for example, a support element 2000 with a substrate can be placed in a loading-locking chamber 300, and thereafter, a reaction chamber 100 can be loaded with a new substrate to be processed.

[0065] exist Figure 6 In the diagram, time te1 corresponds to the time during step E3 when the tool 4000 without the substrate faces the entrance of the reaction chamber 100 (just outside the reaction chamber 100) and is about to enter; the tool 4000 with the shield 4500 is at ambient temperature, typically between 20°C and 30°C, for example 25°C; the element 2000 and the substrate (and the entire reaction chamber 100) are at temperature Te1 corresponding to the predetermined temperature mentioned above, typically between 700°C and 1100°C in this example, for example 900°C.

[0066] Time te2 corresponds to the time during step E5 when the tool 4000 with the substrate has just left the reaction chamber 100; around time te2, the hatch 120 is closed.

[0067] During the time interval between time te1 and time te2, the shield 4500 hangs over the substrate. It should be noted that the shield 4500 is rapidly heated in such a manner that it heats up rapidly upon entering the reaction chamber 100, and therefore the initial cooling of the substrate during the time interval between time te1 and time te2 is very small; the temperature Te2 at time te2 can be, for example, equal to 85% to 95% of the temperature Te1 expressed in degrees Celsius, i.e., Te2 = [0.85 to 0.95]. Te1.

[0068] Time te3 corresponds to the time when tool 4000, for example in loading-locking chamber 300, lowers the substrate (which is placed on support element 2000). Figure 6 The time required for the chart and tool to enter the loading-locking chamber 300, lower the component 2000, and leave the loading-locking chamber 300 is irrelevant; this time may be a few seconds (e.g., 4 to 5 seconds) and is much shorter than the duration of the component 2000 in the loading-locking chamber (e.g., 50 to 300 seconds).

[0069] During the time interval between time te2 and time te3, the shield 4500 hangs over the substrate, and initial cooling of the substrate occurs; this cooling is slow because the shield 4500 continues to keep the substrate warm due to its thermal inertia; therefore, thermal shock is small. At time te3, there is a temperature Te3, which can be, for example, equal to 30% to 50% of the temperature Te1 expressed in degrees Celsius, i.e., Te3 = [0.3 to 0.5]. Te1.

[0070] Time te4 corresponds to the time when the element 2000 with substrate has been completely cooled to temperature Te4 corresponding to the ambient temperature in the loading-locking chamber 300, typically between 20°C and 30°C, for example, 25°C. During the time interval between time te3 and time te4, a second and final cooling of the substrate occurs; this second and final cooling will not be a source of thermal shock because the temperature difference between the loading-locking chamber and the substrate is relatively small.

[0071] In a typical example, the time interval between time te1 and time te2 can be 20-60 seconds.

[0072] According to a typical example, the time interval between time te2 and time te3 can be 20-60 seconds.

[0073] According to a typical example, the time interval between time te3 and time te4 can be 50-300 seconds.

[0074] Figure 5 and Figure 6 The graph shows the average temperature of the upper surface of the substrate; the lower surface of the substrate is essentially at the temperature of the support element; in a steady state, the upper and lower surfaces of each substrate have the same temperature. The support element has high thermal inertia, so its temperature changes slowly, but its temperature still changes when the element is introduced into the reaction chamber and when it is removed from the reaction chamber. Therefore, the use of the shielding element according to the invention reduces the temperature difference between the multiple surfaces of the substrate.

[0075] The reactor 1000 includes a tool 4000 for manipulating the substrate, which is one embodiment of the present invention.

[0076] Tool 4000 is used to introduce the substrate into reaction chamber 100 and remove the substrate from reaction chamber 100.

[0077] Generally speaking, it can be said that the substrate (advantageously placed on a support element) is transferred between the reaction chamber and one or more "positioning stations". Figure 1 In the examples, the most typical “locator” is the loading-locking chamber 300, but any chamber 210 and / or any chamber 220 can also be such a “locator”.

[0078] As can be understood from the foregoing, this invention allows for the loading and unloading of substrates into and from the reaction chamber without significantly lowering the temperature of the reaction chamber and with limited thermal shock to the substrate. Therefore, the productivity of the reactor is increased.

[0079] This article also provides the following items: 1. A tool for manipulating a substrate, comprising a fork; The fork includes two arms configured to directly or indirectly clamp or support one or more substrates by applying lateral and / or vertical forces through contact during use. The tool for manipulating the substrates is characterized in that it includes a shield that is fixed or can be fixed to the fork so that, in use, when the one or more substrates are clamped or supported by the fork, the shield hangs over the one or more substrates at a certain distance.

[0080] 2. The tool for manipulating a substrate according to Item 1, wherein the shielding member comprises a plate-like member, particularly a flat plate-like member.

[0081] 3. The tool for manipulating substrates according to item 2, wherein, in use, when one or more substrates are held or supported by the fork and are in a horizontal position, the plate-like member is adapted to be in a horizontal position.

[0082] 4. The tool for manipulating a substrate according to any one of items 1 to 3 above, wherein the shield is adapted to store heat.

[0083] 5. The tool for manipulating a substrate according to any one of items 1 to 4 above, wherein the shielding element is adapted to shield infrared radiation.

[0084] 6. The tool for manipulating a substrate according to any one of items 1 to 5 above, wherein the shield is made of graphite.

[0085] 7. The tool for manipulating a substrate according to any one of items 1 to 6 above, wherein the fork is configured to directly clamp or support the substrate support element by applying a lateral force and / or a vertical force to the substrate support element through contact during use.

[0086] 8. A tool for manipulating a substrate according to any one of items 1 to 7 above, wherein the shield is fixed or can be fixed to the fork, in particular fixed or can be fixed to the two arms of the fork.

[0087] 9. The tool for manipulating a substrate according to any one of items 1 to 8 above, wherein the fork is made of quartz.

[0088] 10. An epitaxial reactor comprising a tool for manipulating a substrate according to any one of items 1 to 9 above.

[0089] 11. The epitaxial reactor according to Item 10, the epitaxial reactor comprising a reaction chamber, wherein the tool is adapted for introducing a substrate into the reaction chamber and / or removing a substrate from the reaction chamber.

[0090] 12. The epitaxial reactor according to item 10 or 11, the epitaxial reactor comprising a substrate positioning station, wherein the tools are adapted for removing and / or bringing a substrate from the positioning station and / or into the positioning station, and wherein the positioning station is a loading-locking chamber or a cooling station or a heating station.

[0091] 13. The epitaxial reactor according to item 10, 11 or 12, wherein the epitaxial reactor is adapted to manipulate a substrate placed on a substrate support element.

[0092] 14. A method for introducing a substrate into the reaction chamber of an epitaxial reactor, comprising the following steps: I1) Adjust the internal temperature of the reaction chamber to a predetermined temperature lower than the processing temperature. I2) Position the tool with the shielding element at the support element with one or more substrates to be processed, such that the shielding element hangs over the one or more substrates to be processed. I3) The support element is clamped using the tool. I4) Open the entrance hatch of the reaction chamber. I5) Move the tool with the support element until the support element is inside the reaction chamber. I6) Place the support element in the reaction chamber. I7) Move the tool without the support element until the tool is outside the reaction chamber. I8) Close the entrance hatch of the reaction chamber; and I9) Adjust the internal temperature of the reaction chamber to the processing temperature.

[0093] 15. A method for removing a substrate from the reaction chamber of an epitaxial reactor, comprising the following steps: E1) Adjust the internal temperature of the reaction chamber to a predetermined temperature lower than the processing temperature. E2) Open the entrance hatch of the reaction chamber. E3) Position the tool with the shielding element so that it hangs over the one or more processed substrates until it reaches the interior of the reaction chamber and is positioned at a support element with one or more processed substrates. E4) The support element is clamped using the tool. E5) Move the tool with the support element until the tool is outside the reaction chamber, and E6) Close the entrance hatch of the reaction chamber.

Claims

1. A tool (4000) for manipulating a substrate (3000), comprising a fork (4100); The fork (4100) includes two arms (4120, 4140), each of which is configured to have an L-shaped cross-section, such that in use, the two arms (4120, 4140) contact one or more substrates (3000) through the side and / or lower surface of the L-shaped cross-section to apply lateral and / or vertical forces to directly or indirectly clamp or support the one or more substrates (3000). The tool (4000) for manipulating the substrates (3000) includes a shield (4500) configured to be directly fixed to the upper surface of the L-shaped cross-section of the two arms (4120, 4140) of the fork (4100) so that, in use, when one or more substrates are clamped or supported by the two arms (4120, 4140) of the fork (4100), the shield (4500) hangs over the one or more substrates (3000) at a certain distance; and The shielding element (4500) is suitable for storing heat or for shielding infrared radiation.

2. The tool (4000) for manipulating a substrate (3000) according to claim 1, wherein, The shielding component (4500) includes a plate-shaped component (4510).

3. The tool (4000) for manipulating the substrate (3000) according to claim 2, wherein, In use, when one or more substrates (3000) are held or supported by the fork (4100) and are in a horizontal position, the plate (4510) is adapted to be in a horizontal position.

4. The tool (4000) for manipulating the substrate (3000) according to any one of claims 1 to 3, wherein, The shielding element (4500) is made of graphite.

5. The tool (4000) for manipulating a substrate (3000) according to any one of claims 1 to 3, wherein, The fork (4100) is configured to directly clamp or support the substrate support element (2000) by applying lateral and / or vertical forces to it through contact during use.

6. The tool (4000) for manipulating a substrate (3000) according to claim 4, wherein, The fork (4100) is configured to directly clamp or support the substrate support element (2000) by applying lateral and / or vertical forces to it through contact during use.

7. The tool (4000) for manipulating a substrate (3000) according to any one of claims 1-3 and 6, wherein, The fork (4100) is made of graphite.

8. The tool (4000) for manipulating a substrate (3000) according to claim 4, wherein, The fork (4100) is made of graphite.

9. The tool (4000) for manipulating a substrate (3000) according to claim 5, wherein, The fork (4100) is made of graphite.

10. The tool (4000) for manipulating a substrate (3000) according to any one of claims 1-3, wherein, The fork (4100) is made of quartz.

11. The tool (4000) for manipulating a substrate (3000) according to claim 4, wherein, The fork (4100) is made of quartz.

12. The tool (4000) for manipulating a substrate (3000) according to claim 5, wherein, The fork (4100) is made of quartz.

13. The tool (4000) for manipulating a substrate (3000) according to claim 6, wherein, The fork (4100) is made of quartz.

14. The tool (4000) for manipulating a substrate (3000) according to claim 2, wherein, The plate-shaped member (4510) is a flat plate-shaped member.

15. An epitaxial reactor (1000) comprising a tool (4000) for manipulating a substrate (3000) according to any one of claims 1 to 14.

16. The epitaxial reactor (1000) according to claim 15, the epitaxial reactor (1000) comprising a reaction chamber (100), wherein the tool (4000) is adapted for introducing a substrate (3000) into the reaction chamber (100) and / or removing a substrate (3000) from the reaction chamber (100).

17. The epitaxial reactor (1000) according to claim 15 or 16, the epitaxial reactor (1000) comprising a substrate positioning station, wherein the tool (4000) is adapted for removing and / or bringing the substrate (3000) from and / or into the positioning station, and wherein, The positioning station is a loading-locking chamber (300), a cooling station (210), or a heating station (220).

18. The epitaxial reactor (1000) according to claim 15 or 16, wherein the epitaxial reactor (1000) is adapted to manipulate a substrate (3000) placed on a substrate support element (2000).

19. The epitaxial reactor (1000) according to claim 17, wherein the epitaxial reactor (1000) is adapted to manipulate a substrate (3000) placed on a substrate support element (2000).

20. A method for introducing a substrate (3000) into the reaction chamber (100) of an epitaxial reactor (1000), comprising the steps of: I1) Adjust the internal temperature of the reaction chamber (100) to a predetermined temperature lower than the processing temperature. I2) Positioning a tool (4000) for manipulating a substrate (3000) according to any one of claims 1 to 14, equipped with the shield (4500), at a support element (2000) having one or more substrates (3000) to be processed, such that the shield (4500) of the tool (4000) hangs over the one or more substrates (3000) to be processed. I3) The support element (2000) is clamped by the tool (4000). I4) Open the entrance hatch (120) of the reaction chamber (100). I5) Move the tool (4000) with the support element (2000) until the support element (2000) is inside the reaction chamber (100) (110). I6) Place the support element (2000) in the reaction chamber (100). I7) Move the tool (4000) without the support element (2000) until the tool (4000) is outside (200) of the reaction chamber (100). I8) Close the entrance hatch (120) of the reaction chamber (100); and I9) Adjust the internal temperature of the reaction chamber (100) to the processing temperature.

21. A method for removing a substrate (3000) from a reaction chamber (100) of an epitaxial reactor (1000), comprising the steps of: E1) Adjust the internal temperature of the reaction chamber (100) to a predetermined temperature lower than the processing temperature. E2) Open the entrance hatch (120) of the reaction chamber (100). E3) Position the tool (4000) for manipulating the substrate (3000) according to any one of claims 1 to 14, which is provided with the shield (4500), such that the shield (4500) of the tool (4000) hangs over the one or more processed substrates (3000) until the tool reaches the interior (110) of the reaction chamber (100) and at the support element (2000) with one or more processed substrates (3000). E4) The support element (2000) is clamped by means of the tool (4000). E5) Move the tool (4000) with the support element (2000) until the tool (4000) is outside the reaction chamber (100) (200), and E6) Close the inlet hatch (120) of the reaction chamber (100).

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