Memory system
By using intermediate components to separate the heat conduction path in the memory system, the problem of low heat dissipation efficiency of non-volatile memory chips is solved, achieving independent and efficient heat dissipation and ensuring that non-volatile memory chips operate within the normal temperature range.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KIOXIA CORP
- Filing Date
- 2022-01-04
- Publication Date
- 2026-07-31
AI Technical Summary
In existing memory systems, non-volatile memory chips have low heat dissipation efficiency and cannot effectively cope with the thermal effects generated by controller chips, causing the temperature of non-volatile memory chips to rise beyond the normal operating range.
The heat conduction path is separated by an intermediate component. By setting an opening and a sidewall on the second plate of the intermediate component, the heat conduction paths of the non-volatile memory package and the controller package are separated respectively. The heat conduction sheet is connected to the substrate and the cover to achieve independent heat dissipation.
It effectively suppresses the temperature rise of the non-volatile memory package, ensuring that it remains within the normal operating temperature range, improving heat dissipation efficiency and avoiding the need for thermal throttling.
Smart Images
Figure CN115641883B_ABST
Abstract
Description
[0001] This application enjoys priority based on Japanese Patent Application No. 2021-119404 (filed on July 20, 2021). This application incorporates the entire contents of the basic application by reference to that basic application. Technical Field
[0002] This implementation relates to a memory system. Background Technology
[0003] Conventional memory systems exist that house a non-volatile memory package containing a non-volatile memory chip and a controller package containing a controller chip that controls the non-volatile memory chip, all housed within a housing. Generally, the upper limit of the normal operating temperature range of the non-volatile memory chip is lower than that of the controller chip. Therefore, a structure is required that efficiently dissipates the heat generated by the non-volatile memory chip. Summary of the Invention
[0004] One objective of this implementation is to provide a memory system capable of efficiently dissipating the heat generated by a non-volatile memory chip.
[0005] According to one embodiment, a memory system includes a first plate, an intermediate member, and a substrate. The intermediate member includes a second plate and a pair of sidewalls. The second plate has a first surface facing the first plate and a second surface located on the opposite side of the first surface, and is disposed with a gap between them. A first opening is provided in the second plate. The pair of sidewalls are disposed on the second surface. The substrate is housed between the pair of sidewalls and has a third surface facing the second plate. A first non-volatile memory package housing a first non-volatile memory chip and a controller package housing a controller chip for controlling the first non-volatile memory chip are mounted on the third surface. The first non-volatile memory package is thermally connected to the second plate, and the controller package is thermally connected to the first plate through the first opening. Attached Figure Description
[0006] Figure 1 This is a perspective view showing an example of the appearance of the memory system according to the first embodiment.
[0007] Figure 2 This is a perspective view showing an example of the appearance of the memory system of the first embodiment as seen from other viewpoints.
[0008] Figure 3 This is an exploded perspective view showing an example of the memory system of the first embodiment.
[0009] Figure 4 This is an exploded perspective view showing an example of the memory system of the first embodiment as seen from other viewpoints.
[0010] Figure 5 yes Figure 1 An enlarged view of region P, a portion of the appearance of the memory system of the first embodiment shown.
[0011] Figure 6 The memory system of the first embodiment is used Figure 1 The sectional view is obtained by cutting along the cutting line AA shown.
[0012] Figure 7 This is an exploded perspective view showing an example of the memory system of the second embodiment.
[0013] Figure 8 This is an exploded perspective view showing an example of a memory system of the second embodiment as seen from another viewpoint.
[0014] Figure 9 The memory system of the second embodiment is used for Figure 1 The sectional view is obtained by cutting along the same cutting line AA as shown.
[0015] Figure 10 This is a perspective view showing an example of the appearance of the intermediate component of the third embodiment.
[0016] Figure 11 This is a perspective view showing an example of the appearance of the intermediate component of the third embodiment as seen from other viewpoints.
[0017] Figure 12 This is an exploded perspective view showing an example of the memory system of the third embodiment.
[0018] Figure 13 This is a perspective view showing an example of the memory system of the third embodiment as viewed from another viewpoint.
[0019] Figure 14 The memory system of the third embodiment is used for Figure 1 The sectional view is obtained by cutting along the same cutting line AA as shown.
[0020] Explanation of reference numerals in the attached figures
[0021] 1. 1a, 1b memory system; 10 housing; 11, 11a base; 12, 12b cover; 13, 13a, 13b intermediate components; 20 substrate; 30 threaded part; 40 heat conduction sheet; 50 gap; 110 first plate; 111 threaded hole; 112 threaded base; 113 pin; 114, 116, 117, 122, 123, 124, 125, 136 protrusions; 115, 134, 135, 138, 139, 151, 1 52, 153 Openings, 120 Third Plate, 121, 133, 211, 212 Through Holes, 130 Second Plate, 131 Side Wall, 132 Notch, 150 Inner Cover, 201, 201-1, 201-2 Non-volatile Memory Packages, 202, 202-1, 202-2 Volatile Memory Packages, 203 PMIC, 204, 208 Capacitors, 205 Controller Package, 206 DC-DC Converter, 207 Connector Section. Detailed Implementation
[0022] Hereinafter, the memory system of the embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments.
[0023] (First Embodiment)
[0024] The memory system of the first embodiment is referred to as memory system 1. Figure 1 This is a perspective view showing an example of the appearance of the memory system 1 according to the first embodiment. Figure 2 This is a perspective view showing an example of the appearance of the memory system 1 of the first embodiment as seen from other viewpoints. Figure 3 This is an exploded perspective view showing an example of the memory system 1 according to the first embodiment. Figure 4 This is an exploded perspective view showing an example of the memory system 1 of the first embodiment as seen from other viewpoints. Figure 5 yes Figure 1 An enlarged view of a portion of the appearance of the memory system 1 of the first embodiment shown. Figure 6 The memory system 1 of the first embodiment is used Figure 1 The sectional view is obtained by cutting along the cutting line AA shown.
[0025] Furthermore, the following example illustrates a memory system 1 that is an SSD (Solid State Drive) with NAND flash memory as its non-volatile memory. For convenience, the long side of the rectangular top or bottom surface of memory system 1 will be designated as the X-direction, the short side as the Y-direction, and the thickness as the Z-direction. Moreover, the following... Figure 1Based on the configuration state of the memory system 1, the relative positional relationship, i.e., the vertical relationship, of the constituent elements configured in the Z direction is shown. Furthermore, hereinafter, the surface facing the positive direction in the Z direction is designated as the upper surface, and the surface facing the negative direction is designated as the lower surface.
[0026] like Figure 1 As shown, the memory system 1 has a flat, rectangular shape. The memory system 1 includes a housing 10 and a substrate 20. The housing 10 includes a base 11, a cover 12, and an intermediate member 13.
[0027] like Figure 3 As shown, the base 11 has a first plate 110. The lower surface of the first plate 110 forms the bottom surface of the memory system 1. At each of the four corners of the first plate 110, a threaded base portion 112 protruding upwards in the Z direction is provided. Furthermore, a threaded hole 111 extending in the Z direction is provided at the upper end of each threaded base portion 112. Each threaded hole 111 is provided for fixing the cover 12 using a threaded member 30. The threaded base portion 112 is an example of a first protrusion.
[0028] A pin 113 protruding upward in the Z direction is provided on the first plate 110. The pin 113 is provided for positioning the substrate 20 relative to the base 11 in the XY direction. Therefore, a through hole 212 for the pin 113 to pass through is provided at a corresponding position on the substrate 20. An intermediate member 13 is disposed between the substrate 20 and the base 11. To allow the pin 113 to pass through the through hole 212, a through hole 133 for the pin 113 to pass through is provided at a corresponding position on the intermediate member 13. Furthermore, in Figures 1-6 In the example shown, there are two pins 113, but the number of pins 113 is not limited to two.
[0029] The intermediate member 13 includes a second plate 130 and a pair of sidewalls 131 disposed at both ends of the second plate 130 in the Y direction. The lower surface of the second plate 130, that is, the surface on the side of the first plate 110 in the surface of the second plate 130, is an example of the first surface. The upper surface of the second plate 130, that is, the surface opposite to the first surface, is an example of the second surface.
[0030] A pair of sidewalls 131 extend from the second plate 130 toward the upper side in the Z direction, in other words, toward the side opposite to the first plate 110, and are generally upright. The pair of sidewalls 131 constitute a pair of sidewalls in the Y direction of the memory system 1. Notched parts 132 are provided at each of the four positions of the intermediate member 13 corresponding to the four threaded pedestal portions 112 provided on the first plate 110. Each notched part 132 is a hole formed by forming a notch inwards on the second plate 130 and a notch in the sidewall 131 toward the upper side in the Z direction from the boundary between the second plate 130 and the sidewall 131. Furthermore, the method of forming each notched part 132 is not limited to this.
[0031] like Figure 5 As shown, when the intermediate member 13 overlaps with the base 11, the four threaded base portions 112 are embedded in the four notches 132, thereby positioning the intermediate member 13 in the XY direction. In the Z direction, the distance T1 from the lower surface of the second plate 130 to each notch 132 of the sidewall 131 is slightly shorter than the protrusion height T2 of each threaded base portion 112. Therefore, when the intermediate member 13 overlaps with the base 11, a portion of the upper surface of each threaded base portion 112 abuts against the notch 132 of the sidewall 131, creating a small gap 50 between the lower surface of the intermediate member 13 and the upper surface of the base 11. Thus, the intermediate member 13 and the base 11 are not in contact except at the locations where the four notches 132 of the pair of sidewalls 131 abut against the four threaded base portions 112. That is, the second plate 130 is positioned relative to the first plate 110 with a gap 50 in the Z direction.
[0032] Furthermore, when the intermediate member 13 overlaps with the base 11, other areas containing threaded holes 111 on the upper surface of each threaded base portion 112 pass through the notch 132 formed in the second plate 130 and are exposed on the upper side of the second plate 130. Additionally, a protrusion 122 is provided on the cover 12 at a position corresponding to each threaded base portion 112. When the substrate 20 is placed on the intermediate member 13, the cover 12 is placed over the substrate 20, and the cover 12 is fixed to the base 11 by the threaded members 30, the area on the upper surface of each threaded base portion 112 exposed on the upper side of the second plate 130, together with the lower end of the protrusion 122 of the cover 12, clamps the substrate 20 from both sides in the Z direction. Thus, the substrate 20 is positioned in the Z direction within the housing 10.
[0033] like Figure 3As shown, the cover 12 has a third plate 120 covering the substrate 20 from the side opposite to the first plate 110 side (i.e., the lower surface of the substrate 20). The upper surface of the third plate 120 constitutes the top surface of the memory system 1. A protrusion 122 protruding downward in the Z direction is provided at each of the four positions of the third plate 120 corresponding to the four threaded base portions 112. A through hole 121 is provided at the position corresponding to each threaded hole 111, and the threaded member 30 passes through each through hole 121 from the upper side in the Z direction. The upper side in the Z direction of each through hole 121 is counterbored for embedding the head of the threaded member 30.
[0034] An intermediate member 13 is superimposed on the base 11, and a base plate 20 is placed between a pair of sidewalls 131 of the intermediate member 13. A cover 12 covers the base plate 20 from above, and the cover 12 is fixed to the base 11 by four threaded members 30. Each threaded member 30 passes through the protrusion 122, the base plate 20, and the intermediate member 13 from the cover 12 side and is threaded into a threaded hole 111 provided in the threaded base portion 112. Therefore, the base plate 20 is provided with four through holes 211 for the threaded members 30 to pass through.
[0035] The base 11, cover 12, and intermediate member 13 constituting the housing 10 are made of a material with excellent heat dissipation and rigidity. For example, the base 11, cover 12, and intermediate member 13 are made of aluminum or aluminum alloy. However, the materials of the base 11, cover 12, and intermediate member 13 are not limited to the examples described above.
[0036] The substrate 20 is a printed circuit board on which multiple components are mounted. At the negative end of the substrate 20 in the X direction, there is a connector portion 207 that is electrically connected to the base plate of the computer device.
[0037] like Figure 3 and Figure 4 As shown, the multiple components mounted on the substrate 20 include non-volatile memory package 201, volatile memory package 202, power management integrated circuit (PMIC) 203, capacitor 204, controller package 205, DC-DC (Direct Current to Direct Current) converter 206, and capacitor 208, etc.
[0038] The non-volatile memory package 201 is obtained by encapsulating a non-volatile memory chip in heat-resistant resin or ceramic. The non-volatile memory chip is, for example, a NAND flash memory chip.
[0039] The volatile memory package 202 is obtained by encapsulating a volatile memory chip in heat-resistant resin or ceramic. The volatile memory chip is, for example, a DRAM (Dynamic Random Access Memory) chip or an SRAM (Static Random Access Memory) chip.
[0040] The controller package 205 is obtained by encapsulating a controller chip that controls a non-volatile memory chip and a volatile memory chip using heat-resistant resin or ceramic, etc. The controller chip is, for example, composed of a SoC (System-on-a-Chip).
[0041] Capacitors 204 and 208 supplement the power supply from the host device connected to the memory system 1. PMIC 203 generates power from the power supplied from the host device to supply power to the various circuit components. DC-DC converter 206 performs voltage conversion.
[0042] The number of various components mounted on the substrate 20 can be multiple. Figures 1-6 In the example shown, eight non-volatile memory packages 201, two volatile memory packages 202, five capacitors 204, one PMIC 203, one controller package 205, one DC-DC converter 206, and three capacitors 208 are mounted on the substrate 20. Four of the non-volatile memory packages 201, one volatile memory package 202, five capacitors 204, and one PMIC 203 are mounted on the upper surface of the substrate 20. The remaining four non-volatile memory packages 201, one remaining volatile memory package 202, one controller package 205, one DC-DC converter 206, and three capacitors 208 are mounted on the lower surface of the substrate 20.
[0043] Regarding the components mounted on the upper and lower surfaces of the substrate 20, the designations of components mounted on the upper surface of the substrate 20 are marked with "-1", and the designations of components mounted on the lower surface of the substrate 20 are marked with "-2". Furthermore, the lower surface of the substrate 20, that is, the surface on the side of the first plate 110 of the substrate 20, is an example of the third surface. The upper surface of the substrate 20, that is, the surface opposite to the third surface, is an example of the fourth surface. Each of the four non-volatile memory packages 201-2 is an example of a first non-volatile memory package mounted on the third surface. Each of the four non-volatile memory packages 201-1 is an example of a second non-volatile memory package mounted on the fourth surface.
[0044] The non-volatile memory package 201, volatile memory package 202, PMIC 203, controller package 205, and DC-DC converter 206 among the components mounted on the substrate 20 generate a large amount of heat. A heat-conducting sheet 40 is provided for these heat-generating components. The heat-conducting sheet 40 is formed, for example, from an acrylic resin or a silicone resin, and has thermal conductivity, insulation, and elasticity. The heat-conducting sheet 40 is used to thermally connect the component to the base 11, the cover 12, or the intermediate member 13. The heat-conducting sheet 40 conducts heat generated by the component to the base 11, the cover 12, or the intermediate member 13, thereby suppressing the temperature rise of the component. Therefore, the heat-conducting sheet 40 is provided in contact with the surface of the component and the surface of the base 11, the cover 12, or the intermediate member 13.
[0045] Among the components of the memory system 1, the controller package 205 generates the most heat. Therefore, assuming that the heat dissipation path generated by the controller package 205 and the heat dissipation path generated by the non-volatile memory package 201 are shared, there is a possibility that cooling of the non-volatile memory package 201 will be hindered. Furthermore, the upper limit of the temperature range within which the non-volatile memory chip housed in the non-volatile memory package 201 can operate normally is low. Therefore, for example, if the temperature of the non-volatile memory package 201 rises excessively, thermal throttling, i.e., intentional suppression of the performance of the memory system 1, needs to be performed. Therefore, it is required to efficiently dissipate the heat generated by the non-volatile memory package 201 without being affected by the heat generated by the controller package 205.
[0046] In the first embodiment, in order to suppress the impact of heat generated by the controller package 205 on the non-volatile memory package 201, the heat dissipation path generated by the controller package 205 and the heat dissipation path generated by the non-volatile memory package 201 are separated. The configuration for separating these paths will be described below.
[0047] like Figure 3 As shown, an opening 134 is provided in the second plate 130 of the intermediate member 13 at a position corresponding to the controller package 205. Additionally, a protrusion 114 protruding upwards in the Z direction is provided in the first plate 110 at a position corresponding to the controller package 205. Furthermore, the opening 134 is an example of the first opening.
[0048] like Figure 6 As shown, the heat-conducting sheet 40 disposed in the controller package 205 passes through the opening 134 and contacts the upper end of the protrusion 114. Therefore, the heat generated by the controller package 205 is conducted to the base 11 via the heat-conducting sheet 40 and the protrusion 114, and dissipated from the base 11 to the outside.
[0049] The heat-conducting tabs 40 of each of the four non-volatile memory packages 201-2 are in contact with the upper surface of the second plate 130 of the intermediate member 13. Therefore, a portion of the heat generated by the four non-volatile memory packages 201-2 is conducted to the intermediate member 13 via the four heat-conducting tabs 40 of the four non-volatile memory packages 201-2, and dissipated to the outside from the pair of sidewalls 131 of the intermediate member 13. Additionally, a portion of the heat generated by the non-volatile memory packages 201-2 diffuses to the second plate 130, thus suppressing the peak temperature of the non-volatile memory packages 201-2.
[0050] Four non-volatile memory packages 201-1 are disposed on the opposite side of the position where four non-volatile memory packages 201-2 are disposed on the upper surface of the substrate 20. Each of the four non-volatile memory packages 201-1 has a heat-conducting sheet 40 in contact with the lower surface of the third plate 120 of the cover 12. Therefore, a portion of the heat generated by the four non-volatile memory packages 201-1 is conducted to the cover 12 via the four heat-conducting sheets 40 disposed on the four non-volatile memory packages 201-1, and dissipated from the cover 12 to the outside. A portion of the heat generated by the non-volatile memory packages 201-1 diffuses throughout the cover 12, thus suppressing the peak temperature of the non-volatile memory packages 201-1.
[0051] The controller package 205 and the heat-conducting sheet 40 disposed on the controller package 205 are non-contact with the intermediate member 13. Furthermore, as described above, the second plate 130 of the intermediate member 13 is positioned with a gap 50 between it and the first plate 110 of the base 11. Therefore, the heat dissipation path from the controller package 205 to the base 11, which is the heat dissipation path for the heat generated by the controller package 205, is separated from the heat dissipation path for the heat generated by the eight non-volatile memory packages 201. Thus, the heat generated by the non-volatile memory packages 201 can be efficiently dissipated without being affected by the heat generated by the controller package 205.
[0052] The heat dissipation paths for the heat generated by the volatile memory package 202, PMIC 203, and DC-DC converter 206 can be arbitrarily designed.
[0053] exist Figures 1-6In the example shown, the heat-conducting sheet 40 disposed on the volatile memory package 202-2 is in contact with the upper surface of the second plate 130 of the intermediate member 13. Therefore, a portion of the heat generated by the volatile memory package 202-2 is conducted to the intermediate member 13 via the heat-conducting sheet 40, and dissipated to the outside from the pair of sidewalls 131 of the intermediate member 13. Furthermore, a portion of the heat generated by the volatile memory package 202-2 diffuses throughout the second plate 130, thus suppressing the peak temperature of the volatile memory package 202-2.
[0054] Alternatively, similar to the case of controller package 205, an opening may be provided in the second plate 130 at a position corresponding to the volatile memory package 202-2, through which the volatile memory package 202-2 passes and is thermally connected to the first plate 110 via the heat conduction sheet 40.
[0055] A volatile memory package 202-1 is disposed on the opposite side of the location where the volatile memory package 202-2 is disposed on the upper surface of the substrate 20. A heat-conducting sheet 40 disposed on the volatile memory package 202-1 contacts the lower surface of the third plate 120 of the cover 12. Therefore, a portion of the heat generated by the volatile memory package 202-1 is conducted to the cover 12 via the heat-conducting sheet 40 and dissipated from the cover 12 to the outside. A portion of the heat generated by the volatile memory package 202-1 diffuses throughout the cover 12, thus suppressing the peak temperature of the volatile memory package 202-1.
[0056] The heat-conducting plate 40 disposed in the DC-DC converter 206 contacts the upper surface of the second plate 130 of the intermediate member 13. Therefore, heat generated by the DC-DC converter 206 is conducted to the intermediate member 13 via the heat-conducting plate 40 and dissipated to the outside from the pair of sidewalls 131 of the intermediate member 13. Furthermore, a portion of the heat generated by the DC-DC converter 206 diffuses throughout the second plate 130, thus suppressing the peak temperature of the DC-DC converter 206.
[0057] The heat conduction plate 40 disposed on the PMIC203 contacts the lower surface of the third plate 120 of the cover 12. Therefore, the heat generated by the PMIC203 is conducted to the cover 12 via the heat conduction plate 40 disposed on the PMIC203, and dissipated from the cover 12 to the outside.
[0058] In other words, Figures 1-6In the example shown, the heat dissipation path for the heat generated by the volatile memory package 202, the DC-DC converter 206, and the PMIC 203 is shared with the heat dissipation path for the heat generated by the non-volatile memory package 201. Therefore, the heat generated by the volatile memory package 202, the DC-DC converter 206, and the PMIC 203 can be dissipated efficiently without being affected by the heat generated by the controller package 205.
[0059] In addition, Figures 1-6 In the example shown, in addition to the opening 134, the second plate 130 of the intermediate member 13 also has an opening 135. The opening 135 prevents the three capacitors 208 disposed at corresponding positions on the lower surface of the substrate 20 from interfering with the intermediate member 13.
[0060] Thus, according to the first embodiment, the second plate 130 of the intermediate member 13 is disposed with a gap 50 in the Z direction relative to the first plate 110. An opening 134 is provided in the second plate 130. A substrate 20, on which a non-volatile memory package 201-2 and a controller package 205 are mounted, is housed between a pair of sidewalls 131 of the intermediate member 13. The non-volatile memory package 201-2 is thermally connected to the second plate 130 via a heat-conducting sheet 40. The controller package 205 is thermally connected to the first plate 110 via the heat-conducting sheet 40 through the opening 134.
[0061] Therefore, the heat dissipation path of the heat generated by the non-volatile memory package 201-2 is separated from the heat dissipation path of the heat generated by the controller package 205, thus enabling efficient heat dissipation of the heat generated by the non-volatile memory package 201-2.
[0062] Furthermore, a notch 132 is provided in each of the pair of sidewalls 131 of the intermediate member 13. Four threaded base portions 112 are provided in the first plate 110. The first plate 110 and the intermediate member 13 abut against each other by means of the notch 132 in each of the pair of sidewalls 131 and the four threaded base portions 112.
[0063] Therefore, in the Z direction, a gap 50 is provided between the second plate 130 and the first plate 110 of the intermediate member 13.
[0064] Furthermore, according to the first embodiment, a non-volatile memory package 201-1 is mounted on the upper surface of the substrate 20. The non-volatile memory package 201-1 is thermally connected to the third plate 120 of the cover 12 via a heat-conducting sheet 40.
[0065] Therefore, the heat dissipation path of the heat generated by the non-volatile memory package 201-1 is separated from the heat dissipation path of the heat generated by the controller package 205, thus enabling efficient heat dissipation of the heat generated by the non-volatile memory package 201-1.
[0066] Furthermore, according to the first embodiment, a non-volatile memory package 201-1 is installed on the opposite side of the position on the upper surface of the substrate 20 where the non-volatile memory package 201-2 is mounted.
[0067] Therefore, a portion of the heat generated by the non-volatile memory package 201-2 can be conducted to the cover 12 via the substrate 20, the non-volatile memory package 201-1, and the heat-conducting sheet 40, and dissipated from the cover 12. As a result, the heat generated by the non-volatile memory packages 201-1 and 201-2 can be dissipated more efficiently.
[0068] Furthermore, the lower surface of the first plate 110 of the base 11 functions as a heat dissipation surface for dissipating heat generated by the controller package 205 to the outside. In addition, in the first embodiment, the lower surface area of the first plate 110 of the base 11 is relatively large. Therefore, according to the first embodiment, heat generated by the controller package 205 can be dissipated efficiently.
[0069] (Second Implementation)
[0070] The memory system of the second embodiment is referred to as memory system 1a. The base of the second embodiment is referred to as base 11a. The intermediate component of the second embodiment is referred to as intermediate component 13a. Figure 7 This is an exploded perspective view showing an example of the memory system 1a according to the second embodiment. Figure 8 This is an exploded perspective view showing an example of the memory system 1a of the second embodiment as seen from other viewpoints. Figure 9 The memory system 1a of the second embodiment is used for... Figure 1 The cross-sectional view is obtained by cutting along the same cutting line AA as shown. Furthermore, for components identical to those in the first embodiment, the same reference numerals are used, and their descriptions are omitted.
[0071] In the first embodiment, the memory system 1 is configured such that heat generated by the non-volatile memory package 201 diffuses throughout the second plate 130 and dissipates heat to the outside from the pair of sidewalls 131 or the cover 12. In contrast, in the second embodiment, the memory system 1a is configured such that heat generated by the non-volatile memory package 201 can also be dissipated to the outside from a portion of the lower surface of the second plate 130 of the intermediate member 13a.
[0072] Specifically, such as Figure 8 As shown, in the second embodiment, a protrusion 136 protruding downward in the Z direction is provided at the position of the second plate 130 of the intermediate member 13a corresponding to the four non-volatile memory packages 201-2. Furthermore, an opening 115 is provided at the position of the base 11a corresponding to the protrusion 136. The dimension of the opening 115 in the XY direction is slightly larger than the dimension of the protrusion 136 in the XY direction. Additionally, the protrusion height of the protrusion 136 approximately corresponds to the sum of the thickness of the first plate 110 and the spacing of the gap 50. Moreover, the opening 115 is an example of a second opening, and the protrusion 136 is an example of a second protrusion.
[0073] Therefore, such as Figure 9 As shown, when the intermediate member 13a overlaps with the base 11a, the protrusion 136 is inserted into the opening 115 while the side of the protrusion 136 is not in contact with the inner wall of the opening 115. Furthermore, the lower end of the protrusion 136 is approximately coplanar with the lower surface of the first plate 110. Therefore, the heat generated by the four non-volatile memory packages 201-2 is conducted to the second plate 130 of the intermediate member 13a via the four heat-conducting sheets 40 provided on the four non-volatile memory packages 201-2, and dissipated to the outside from the protrusion 136.
[0074] Thus, in the second embodiment, an opening 115 is provided in a portion of the base 11a, and the protrusion 136, that is, a portion of the intermediate member 13a, protrudes to the outside through the opening 115. Therefore, compared to the first embodiment, the area of the heat dissipation surface for dissipating heat generated by the non-volatile memory package 201 to the outside is increased by an amount corresponding to the area of the lower end of the protrusion 136. As a result, heat generated by the non-volatile memory package 201 can be dissipated more efficiently.
[0075] Like memory systems in other embodiments, memory system 1a is electrically connected to the base plate of a computer device via connector 207. A ventilation device is provided in the computer device, and the surface of the housing 10 of memory system 1a is exposed to airflow generated by the ventilation device, thereby being cooled. In the second embodiment, by making the lower end of the protrusion 136 substantially coplanar with the lower surface of the first plate 110, i.e., the bottom surface of the housing 10, it is exposed to airflow in the same way as the bottom surface of the housing 10. Therefore, the amount of heat dissipated from the lower end of the protrusion 136 to the outside can be increased. In other words, by making the lower end of the protrusion 136 substantially coplanar with the lower surface of the first plate 110, the heat generated by the non-volatile memory package 201 can be dissipated more efficiently.
[0076] Furthermore, the lower end of the protrusion 136 may not necessarily be substantially coplanar with the lower surface of the first plate 110. For example, the protrusion 136 may not necessarily be provided on the intermediate member 13a. As long as a part of the intermediate member 13a is exposed to the outside from the opening 115 and the intermediate member 13a and the base 11a are not in contact at locations other than the four threaded base portions 112, the structure of the lower surface of the intermediate member 13a can be arbitrarily designed.
[0077] exist Figures 7-9 In the example shown, the heat dissipation paths for the heat generated by the volatile memory package 202-2 and the heat dissipation paths for the heat generated by the DC-DC converter 206 are different from the respective heat dissipation paths in the first embodiment.
[0078] Specifically, such as Figure 7 and Figure 8 As shown, an opening 138 is provided in the second plate 130 of the intermediate member 13a at a position corresponding to the volatile memory package 202-2. Additionally, as... Figure 7 As shown, a protrusion 116 protruding upward in the Z direction is provided at a position in the first plate 110 of the base 11a corresponding to the volatile memory package 202-2. A heat-conducting sheet 40 provided in the volatile memory package 202-2 passes through the opening 138 and contacts the upper end of the protrusion 116. Therefore, heat generated by the volatile memory package 202-2 is conducted to the base 11a via the heat-conducting sheet 40 and the protrusion 116, and dissipated from the base 11a to the outside.
[0079] In addition, such as Figure 7 and Figure 8 As shown, an opening 139 is provided in the second plate 130 of the intermediate member 13a at a position corresponding to the DC-DC converter 206. Additionally, as... Figure 7 As shown, a protrusion 117 protruding upwards in the Z-direction is provided in the first plate 110 of the base 11a at a position corresponding to the DC-DC converter 206. A heat-conducting plate 40 provided on the DC-DC converter 206 passes through the opening 139 and contacts the upper end of the protrusion 117. Therefore, heat generated by the DC-DC converter 206 is conducted to the base 11a via the heat-conducting plate 40 and the protrusion 117, and dissipated from the base 11a to the outside.
[0080] Furthermore, one or both of the heat dissipation paths for the heat generated by the volatile memory package 202-2 and the heat dissipation paths for the heat generated by the DC-DC converter 206 may be configured to be the same as the respective heat dissipation paths in the first embodiment.
[0081] Thus, according to the second embodiment, an opening 115 is provided in the first plate 110 at a position corresponding to the non-volatile memory package 201-2.
[0082] Therefore, the heat generated by the non-volatile memory package 201-2 can also be dissipated from the lower surface of the second plate 130. Since a new heat dissipation path for the heat generated by the non-volatile memory package 201-2 has been added, the heat generated by the non-volatile memory package 201-2 can be dissipated more efficiently.
[0083] In addition, according to the second embodiment, a protrusion 136 is provided on the lower surface of the second plate 130 at a position corresponding to the non-volatile memory package 201-2. The lower end of the protrusion 136 protrudes through the opening 115 and is substantially coplanar with the lower surface of the first plate 110.
[0084] Therefore, the lower end of the protrusion 136 can be exposed to external wind. As a result, the heat generated by the non-volatile memory package 201-2 can be dissipated more efficiently.
[0085] (Third Implementation)
[0086] The memory system of the third embodiment is referred to as memory system 1b. The intermediate component of the third embodiment is referred to as intermediate component 13b. The cover of the third embodiment is referred to as cover 12b.
[0087] Figure 10 This is a perspective view showing an example of the appearance of the intermediate member 13b of the third embodiment. Figure 11 This is a perspective view showing an example of the appearance of the intermediate member 13b of the third embodiment as viewed from other viewpoints. Figure 12 This is an exploded perspective view showing an example of the memory system 1b of the third embodiment. Figure 13 This is an exploded perspective view showing an example of the memory system 1b of the third embodiment as observed from other viewpoints. Figure 14 The memory system 1b of the third embodiment is used for... Figure 1 The cross-sectional view is obtained by cutting along the same cutting line AA as shown. Furthermore, for components identical to those in the first embodiment, the same reference numerals are used, and their descriptions are omitted. Additionally, for components identical to those in the second embodiment, the same reference numerals are used, and their descriptions are omitted.
[0088] like Figure 10As shown, the intermediate member 13b of the third embodiment differs from the intermediate member 13a of the second embodiment in that it is provided with an inner cover 150 that connects the pair of sidewalls 131 near the upper ends of the pair of sidewalls 131. A cylindrical structure is formed by the second plate 130, the pair of sidewalls 131, and the inner cover 150, and a base plate 20 is housed inside this cylindrical structure. Furthermore, a cover 12b covers the upper side of the inner cover 150. In addition, the inner cover 150 is an example of a fourth plate.
[0089] Because an inner cover 150 is provided in the intermediate member 13b, the area of the intermediate member 13b is larger than that of the intermediate member 13a in the second embodiment. Therefore, it is possible to promote the diffusion of heat conducted from the non-volatile memory package 201-2 to the intermediate member 13b as a whole into the intermediate member 13b. As a result, heat generated by the non-volatile memory package 201-2 can be dissipated more efficiently.
[0090] like Figure 10 As shown, an opening 151 is provided at each of the four positions corresponding to the four non-volatile memory packages 201-1 within the inner cover 150. Additionally, as... Figure 13 As shown, on the lower surface of the third plate 120 of the cover 12b, a protrusion 123 protruding downward in the Z direction is provided at each of the four positions corresponding to the four non-volatile memory packages 201-1. Figure 14 As shown, four heat-conducting plates 40 disposed on the four non-volatile memory packages 201-1 each pass through the opening 151 and contact the lower end of the protrusion 123. Therefore, heat generated by each of the four non-volatile memory packages 201-1 is conducted to the cover 12b via the heat-conducting plates 40 and the protrusion 123, and dissipated from the cover 12b to the outside. Furthermore, the opening 151 is an example of a third opening.
[0091] like Figure 10 As shown, an opening 152 is provided in the inner cover 150 at a position corresponding to the volatile memory package 202-1. Additionally, as... Figure 13 As shown, a protrusion 124 protruding downwards in the Z direction is provided on the lower surface of the third plate 120 of the cover 12b at a position corresponding to the volatile memory package 202-1. Figure 14 As shown, the heat-conducting sheet 40 disposed in the volatile memory package 202-1 passes through the opening 152 and contacts the lower end of the protrusion 124. Therefore, the heat generated by the volatile memory package 202-1 is conducted to the cover 12b via the heat-conducting sheet 40 and the protrusion 124, and dissipated from the cover 12b to the outside.
[0092] like Figure 10As shown, an opening 153 is provided in the inner cover 150 at a position corresponding to PMIC 203. Additionally, as... Figure 13 As shown, a protrusion 125 protruding downwards in the Z direction is provided on the lower surface of the third plate 120 of the cover 12b at a position corresponding to the PMIC 203. The heat-conducting sheet 40 provided on the PMIC 203 passes through the opening 153 and contacts the lower end of the protrusion 125. Therefore, the heat generated by the PMIC 203 is conducted to the cover 12b via the heat-conducting sheet 40 and the protrusion 125, and dissipated from the cover 12b to the outside.
[0093] Thus, according to the third embodiment, an inner cover 150 is provided between a pair of sidewalls 131 of the intermediate member 13b. The second plate 130, the pair of sidewalls 131 and the inner cover 150 form a cylindrical structure that houses the substrate 20 inside.
[0094] Therefore, it can promote the diffusion of heat generated by the non-volatile memory package 201-2, and thus can dissipate the heat generated by the non-volatile memory package 201-2 more efficiently.
[0095] In addition, in the third embodiment, an opening 151 is provided in the inner cover 150 at a position corresponding to the non-volatile memory package 201-1, and the non-volatile memory package 201-1 passes through the opening 151 and is thermally connected to the third plate 120 of the cover 12b.
[0096] Therefore, similar to the first embodiment, the heat generated by the non-volatile memory package 201-1 can be dissipated efficiently.
[0097] As described above, according to the first to third embodiments, the second plate 130 of the intermediate members 13, 13a, and 13b is arranged with a gap 50 between it and the first plate 110. An opening 134 is provided in the second plate 130. A substrate 20, on which a non-volatile memory package 201-2 and a controller package 205 are mounted on their lower surfaces, is housed between a pair of sidewalls 131 of the intermediate members 13, 13a, and 13b. The non-volatile memory package 201-2 is thermally connected to the second plate 130 via a heat-conducting sheet 40. The controller package 205 passes through the opening 134 and is thermally connected to the first plate 110 via the heat-conducting sheet 40.
[0098] Therefore, the heat generated by the non-volatile memory package 201 can be dissipated efficiently. As a result, thermal throttling can be suppressed, thereby improving the performance of the memory system 1.
[0099] Furthermore, in embodiments 1 to 3, components such as the non-volatile memory package 201 and the controller package 205 are thermally connected to the base 11, the cover 12, or the intermediate member 13 using the heat-conducting sheet 40. The method for thermally connecting the components to the base 11, the cover 12, or the intermediate member 13 is not limited to the method using the heat-conducting sheet 40. Alternatively, the components can be thermally connected to the base 11, the cover 12, or the intermediate member 13 by directly contacting the surface of the components with the base 11, the cover 12, or the intermediate member 13. In other words, thermal connection refers to the formation of a heat conduction path through the contact between solids.
[0100] According to the first to third embodiments, intermediate members 13, 13a, and 13b are disposed between the bases 11, 11a and the covers 12, 12b, and the substrate 20 is housed in the intermediate members 13, 13a, and 13b. Furthermore, by introducing the intermediate members 13, 13a, and 13b, a heat dissipation path for the heat generated by each element can be set for each element. In the descriptions of the first to third embodiments, a path for dissipating heat generated by each element is formed by the contact between solids. The intermediate members 13, 13a, and 13b can be configured as heat dissipation promoting members. In addition to the heat conduction sheet 40, the heat dissipation promoting member may include heat transport members such as heat pipes, heat transfer surface expansion members such as radiators, latent heat storage materials made of phase change material (PCM), or a small fan. Alternatively, the memory systems 1, 1a, and 1b can be configured such that the heat generated by some or all of the multiple components, including the non-volatile memory package 201 and the controller package 205, is dissipated using these heat dissipation-promoting components. In this way, by introducing intermediate components 13, 13a, and 13b, the installation flexibility of the heat dissipation-promoting components can be increased.
[0101] Several embodiments of the present invention have been described, but these embodiments are shown by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in a wide variety of other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included in the scope of the invention as set forth in the claims and their equivalents.
Claims
1. A memory system, have: First board; An intermediate member includes a second plate and a pair of sidewalls. The second plate has a first surface facing the first plate and a second surface located opposite the first surface. It is disposed with a gap between itself and the first plate and has a first opening. The pair of sidewalls are disposed on the second surface. A substrate is housed between the pair of sidewalls and has a third surface facing the second plate. A first non-volatile memory package housing a first non-volatile memory chip and a controller package housing a controller chip for controlling the first non-volatile memory chip are mounted on the third surface. The first non-volatile memory package is thermally connected to the second board, and the controller package passes through the first opening and is thermally connected to the first board. Through the gap, the heat dissipation path of the heat generated by the controller package is separated from the heat dissipation path of the heat generated by the first non-volatile memory package.
2. The memory system according to claim 1, Each of the pair of sidewalls of the intermediate member is provided with a notch. The first plate is provided with a plurality of first protrusions. The first plate and the intermediate member abut against each other using the notch and the first protrusion.
3. The memory system according to claim 1 or 2, A second opening is provided in the first plate at a position corresponding to the first non-volatile memory package.
4. The memory system according to claim 3, A second protrusion is provided on the first surface of the second plate at a position corresponding to the first non-volatile memory package. The second protrusion protrudes through the inside of the second opening, and the end face of the second protrusion is coplanar with the surface of the first plate opposite to the second plate.
5. The memory system according to claim 1 or 2, It also includes a third plate, which covers a fourth surface of the substrate, which is the side opposite to the third surface. A second non-volatile memory package is mounted on the fourth surface of the substrate, and the second non-volatile memory package houses a second non-volatile memory chip controlled by the controller chip. The second non-volatile memory package is thermally connected to the third board.
6. The memory system according to claim 5, A fourth plate is disposed between the pair of sidewalls of the intermediate member, and the second plate, the pair of sidewalls, and the fourth plate form a cylindrical structure. The substrate is housed inside the cylindrical structure. The third plate covers the fourth surface of the substrate from the outside of the fourth plate.
7. The memory system according to claim 6, A third opening is provided in the fourth plate at a position corresponding to the second non-volatile memory package, and the second non-volatile memory package passes through the third opening to be thermally connected to the third plate.
8. The memory system according to claim 5, The first non-volatile memory package and the second non-volatile memory package are mounted at corresponding positions in the substrate.
9. The memory system according to claim 1 or 2, The first non-volatile memory package is in contact with the second plate via a thermal conductive sheet, and the controller package is in contact with the first plate via a thermal conductive sheet.