一种改善氧化硅表面刻蚀平整度的方法
By adjusting the ratio of NH3 and HF gases through the Certas etching process, combined with multiple etching cycles and heat treatment, the surface smoothness of silicon oxide is improved, solving the problems of surface roughness and interface unevenness of silicon oxide, and enhancing the precision and reliability of semiconductor manufacturing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI INTEGRATED CIRCUIT CORP
- Filing Date
- 2022-10-21
- Publication Date
- 2026-07-17
AI Technical Summary
In the 14FinFET semiconductor manufacturing process, uneven etching of silicon oxide surface leads to differences in Fin height, affecting device performance. Especially at nodes of 14nm and below, existing technologies are unable to effectively improve the surface roughness and interface flatness of silicon oxide.
The Certas etching process is used to form intermediate products AF and AFS by adjusting the ratio of NH3 and HF gases through multiple cycles of etching and heat treatment. This flattens the silicon oxide surface, and the NH3 content is adjusted to increase the etching amount and improve the flatness of the silicon oxide-silicon interface.
It effectively reduces the surface roughness of silicon oxide, improves the flatness of the silicon oxide-silicon interface, reduces the difference in Fin height, and is suitable for technology nodes of 14nm and below, thereby improving chip manufacturing quality.
Smart Images
Figure CN115662899B_ABST