Semiconductor device inspection methods and semiconductor device inspection apparatus

Abstract

The semiconductor inspection apparatus (1) of the present invention comprises: a measuring device (7) that supplies power to a semiconductor device (S) and simultaneously measures the electrical characteristics of the semiconductor device (S) corresponding to the power supply; an optical scanning device (13) that scans the semiconductor device (S) with light whose intensity is modulated at multiple frequencies; a lock-in amplifier (15) that acquires a characteristic signal representing multiple frequency components of the electrical characteristics corresponding to the optical scan; and an inspection device (19) that processes the characteristic signal. The inspection device (19) corrects the phase component of the characteristic signal at any scanning position based on the phase component of the characteristic signal reflecting the electrical characteristics of the first layer (L1) in the semiconductor device (S), specifically reflects the phase component of the characteristic signal at the scanning position reflecting the electrical characteristics of the second layer (L2) in the semiconductor device (S), uses the phase component to standardize the phase component of the characteristic signal at any scanning position, and outputs a result based on the phase component of the standardized characteristic signal.

Description

Technical Field

[0001] One aspect of the implementation relates to a semiconductor device inspection method and a semiconductor device inspection apparatus. Background Technology

[0002] Since then, as a method for analyzing the electrical characteristics of semiconductor devices with three-dimensionally stacked semiconductor chips, locked-in OBIRCH (Lock-in Optical Beam Induced Resistance Change) (see, for example, Non-Patent Document 1 below) has been known (for example). According to this method, non-destructive fault analysis of semiconductor devices can be achieved by measuring changes in electrical characteristics such as resistance while scanning the semiconductor device with a laser.

[0003] Existing technical documents

[0004] Non-patent literature

[0005] Non-patent literature 1: KJP Jacobs et al., “Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devices”, Microelectronics Reliability, Vol. 76-77 (2017), pp. 188-193. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In the existing methods described above, when dealing with semiconductor devices in which multiple semiconductor chips are stacked in the direction of laser irradiation, it is desirable to analyze the electrical characteristics corresponding to the stacked structure.

[0008] Therefore, one aspect of the implementation is made in view of this problem, and the objective is to provide a semiconductor device inspection method and a semiconductor device inspection apparatus that can resolve electrical characteristics corresponding to the stacked structure of semiconductor devices.

[0009] Technical means to solve the problem

[0010] One aspect of the semiconductor device inspection method includes the following steps: supplying power to a semiconductor device and simultaneously measuring the electrical characteristics of the semiconductor device corresponding to the power supply; scanning the semiconductor device with light modulated at a first frequency and light modulated at a second frequency higher than the first frequency, and obtaining characteristic signals corresponding to the scan that represent the first frequency component and the second frequency component; correcting the phase component of the characteristic signal at an arbitrary scan position based on the phase component of the characteristic signal at a first scan position that reflects the electrical characteristics of a first position in the optical axis direction of the light in the semiconductor device; specifically using the phase component of the characteristic signal at a second scan position that reflects the electrical characteristics of a second position in the optical axis direction of the light in the semiconductor device that is different from the first position, and using the phase component to standardize the phase component of the characteristic signal at the arbitrary scan position; and outputting a result based on the phase component of the standardized characteristic signal at the arbitrary scan position.

[0011] Alternatively, another aspect of the semiconductor device inspection apparatus includes: a measuring device that supplies power to a semiconductor device and simultaneously measures the electrical characteristics of the semiconductor device corresponding to the power supply; an optical scanning device that scans the semiconductor device with light modulated at a first frequency and light modulated at a second frequency higher than the first frequency; a signal acquisition device that acquires characteristic signals corresponding to the optical scan, representing the electrical characteristics of the first frequency component and the second frequency component; and a processor that processes the characteristic signals, using the phase component of the characteristic signal at a first scan position reflecting the electrical characteristics of a first position in the optical axis direction of the semiconductor device as a reference, correcting the phase component of the characteristic signal at any scan position, specifically reflecting the phase component of the characteristic signal at a second scan position reflecting the electrical characteristics of a second position in the optical axis direction of the semiconductor device that is different from the first position, using the phase component to standardize the phase component of the characteristic signal at any scan position, and outputting a result based on the phase component of the standardized characteristic signal at any scan position.

[0012] According to one or the other aspect described above, while scanning a semiconductor device with light modulated at a first frequency and light modulated at a second frequency, characteristic signals of the semiconductor device's electrical characteristics, including the first and second frequency components, are obtained. Furthermore, using the phase component of the characteristic signal at a scanned position reflecting the electrical characteristics of the semiconductor device at a first position along the optical axis as a reference, the phase component of the characteristic signal at any scanned position is corrected. Then, the phase component of the characteristic signal at a scanned position specifically reflecting the electrical characteristics of the semiconductor device at a second position along the optical axis is used to standardize the phase component of the characteristic signal at any scanned position. Finally, the result of the standardized phase component of the characteristic signal based on the arbitrary scanned position is output. Thus, the layer structure of the semiconductor device at any scanned position can be deduced, and the electrical characteristics corresponding to the stacked structure of the semiconductor device can be analyzed.

[0013] The effects of the invention

[0014] According to one aspect of the present invention, the electrical characteristics corresponding to the stacked structure of a semiconductor device can be analyzed. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the semiconductor inspection device 1 according to the embodiment.

[0016] Figure 2 It means Figure 1 A block diagram illustrating an example of the hardware configuration of the inspection device 19.

[0017] Figure 3 This is a diagram showing an example of the stacked structure of the semiconductor device S, which is the object of measurement in the semiconductor inspection apparatus 1.

[0018] Figure 4 It is a diagram that represents the characteristic signals of multiple frequency components acquired by the inspection device 19 as a two-dimensional image.

[0019] Figure 5 It plots the phase component θ and the square root of the frequency f as analyzed by the inspection device 19. 1 / 2 A diagram showing the relationship between the two.

[0020] Figure 6 It plots the phase component θ and the square root of the frequency f, corrected by the inspection device 19. 1 / 2 A diagram showing the relationship between the two.

[0021] Figure 7 It is a graph showing the relationship between the phase component θ, standardized by the inspection device 19, and the frequency scaling value Ω.

[0022] Figure 8 It is a two-dimensional image G representing the slope β output by the inspection device 19.β An example diagram.

[0023] Figure 9 It is a two-dimensional image G representing the temperature coefficients γ1 and γ2 output by the inspection device 19. γ1 G γ2 An example diagram.

[0024] Figure 10 This is a flowchart showing the sequence of analytical processing in semiconductor inspection device 1.

[0025] Figure 11 It is a diagram representing an image of a difference image produced by a variation of the present disclosure.

[0026] Figure 12 It is a diagram representing an image of the output image produced by a variation of this disclosure.

[0027] Figure 13 This is a diagram illustrating an example of the stacked structure of the semiconductor device S, the object of measurement in this disclosure.

[0028] Figure 14 This is a diagram illustrating an example of the stacked structure of the semiconductor device S, the object of measurement in this disclosure. Detailed Implementation

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, in the description, the same reference numerals are used for the same elements or elements having the same function, and repeated descriptions are omitted.

[0030] Figure 1 This is a schematic diagram of the semiconductor device inspection apparatus, namely semiconductor inspection apparatus 1, according to the embodiment. Semiconductor inspection apparatus 1 is a device used to measure the electrical characteristics of various parts of a semiconductor device (DUT) to analyze the fault locations of the device under test (DUT). Preferably, a semiconductor device having two or more layers of stacked semiconductor chips is used as the object of measurement in this semiconductor inspection apparatus 1. Furthermore, Figure 1 In the diagram, solid arrows represent the flow of electrical signals between devices, while dashed arrows represent the flow of optical signals between devices.

[0031] That is, the semiconductor inspection apparatus 1 is configured to include: a measuring device 7 containing a voltage application device 3 and a current measuring device 5, a light source 9, a signal source 11, a light scanning device 13, a lock-in amplifier (signal acquisition device) 15, a photodetector 17, and an inspection device 19. Hereinafter, each component of the semiconductor inspection apparatus 1 will be described in detail.

[0032] The measuring device 7 has two terminals. By electrically connecting these two terminals to the semiconductor device S, the voltage applying device 3 applies a constant voltage to the circuit formed in the semiconductor device S to supply power. The current flowing in the semiconductor device S between the two terminals corresponding to the supply is measured in the current measuring device 5 as an electrical characteristic.

[0033] The light source 9 is, for example, a laser source (irradiation source) that irradiates a laser. The light source 9 receives an AC signal generated at a variable frequency via a signal source 11, and generates laser light with its intensity modulated by the frequencies contained in the AC signal. This AC signal can be a signal with a single frequency component or a signal containing multiple frequency components (e.g., a rectangular wave signal). The optical scanning device 13 guides the laser light irradiated from the light source 9 towards the semiconductor device S, and scans the irradiated position of the laser in the semiconductor device S in two dimensions along the surface of the semiconductor device S. Here, the two-dimensional scanning of the laser in the optical scanning device 13 is controlled by the inspection device 19. Additionally, the optical scanning device 13 guides the reflected light generated from the surface of the semiconductor device S corresponding to the laser irradiation to the photodetector 17. Furthermore, the light source 9 can also be an SLD (Super-Luminescent Diode), LED (Light Emitting Diode), or a lamp source that generates incoherent light.

[0034] Lock-in amplifier 15 monitors the AC signal output from signal source 11 and receives a characteristic signal representing electrical characteristics measured by measuring device 7. It extracts the frequency component of the laser modulation frequency from the characteristic signal (lock-in detection) and outputs it to inspection device 19. At this time, lock-in amplifier 15 can also extract multiple frequency components based on the multiple frequency components contained in the AC signal. Photodetector 17 receives the reflected light generated by semiconductor device S based on the laser scanned by optical scanning device 13 and outputs an intensity signal representing the intensity of the reflected light to inspection device 19.

[0035] The inspection device 19 is a data processing device that is electrically connected to the lock-in amplifier 15, the photodetector 17 and the light scanning device 13, controls the two-dimensional scanning of the light scanning device 13, and processes the characteristic signal from the lock-in amplifier 15 and the intensity signal from the photodetector 17.

[0036] Figure 2 This indicates the hardware configuration of the inspection device 19. For example... Figure 2As shown, the inspection device 19 is a computer or similar device. This computer physically includes a processor (CPU, Central Processing Unit) 101, a recording medium (RAM, Random Access Memory) 102 or ROM (Read Only Memory) 103, a communication module 104, and an input / output module 106, all electrically connected. The inspection device 19 functions by reading programs into the CPU 101 and RAM 102, and, based on the control of the CPU 101, causing the communication module 104 and input / output module 106 to operate, and performing data reading and writing to the RAM 102. Furthermore, the inspection device 19, as an input / output device, may include a display, keyboard, mouse, touch panel display, or a data recording device such as a hard disk drive or semiconductor memory. Additionally, the inspection device 19 may be composed of multiple computers.

[0037] Figure 3 This describes an example of the stacked structure of the semiconductor device S, the object of measurement in the semiconductor inspection apparatus 1. The semiconductor device S is a multilayer semiconductor device, having at least, for example, a first layer L1 including a semiconductor circuit section C1 and a wiring section W1, a second layer L2 including a semiconductor circuit section C2 and a wiring section W2, and an interlayer wiring section W12. Furthermore, Figure 3 The diagram of the insulating layer existing between the layers is omitted. In such a semiconductor device S, when a voltage is applied by the voltage application device 3 of the semiconductor inspection device 1, regions A1, A2, and A12 are generated along the interlayer interface direction, i.e., on the surface Su of the semiconductor device S. Region A1 generates current only in the first layer L1, region A2 generates current only in the second layer L2, and region A12 generates current in both the first layer L1 and the second layer L2. The semiconductor device S is irradiated with a laser beam approximately perpendicular to the interlayer interface (surface Su) from the first layer L1 side. As a result, heat is propagated from the position of the first layer L1 where the laser beam is focused. Therefore, the characteristic signal obtained by irradiating region A1 reflects the electrical characteristics of the first layer L1 located at the first position close to the light source 9 in the optical axis direction. In addition, the characteristic signal obtained by irradiating region A2 reflects the electrical characteristics of the second layer L2 located at the second position away from the light source 9 in the optical axis direction. In addition, the characteristic signal obtained from the irradiation area A12 reflects the electrical characteristics of both the first layer L1 and the second layer L2.

[0038] The following is a detailed description of the functions of the inspection device 19.

[0039] The inspection device 19 controls the optical scanning device 13 to perform two-dimensional scanning of the regions A1, A2, and A12 on the semiconductor device S, including laser light modulated at least at a first frequency f1 and laser light modulated at a second frequency higher than the first frequency. In this embodiment, the inspection device 19 also controls the semiconductor device S to scan for laser light modulated at multiple frequencies other than the first and second frequencies f1 and f2. Such laser light modulated at multiple frequencies can also irradiate the semiconductor device S separately. Furthermore, it is also possible to simultaneously irradiate the semiconductor device S with laser light modulated at multiple frequencies, such as with laser light modulated at rectangular waves.

[0040] In addition, the inspection device 19, based on the scanning control of the laser with multiple modulation frequencies f1, f2, ..., acquires characteristic signals locked and detected at each scanning position of the semiconductor device S according to each of the multiple frequency components f1, f2, ..., and converts these characteristic signals into two-dimensional images for analysis, as signals with phase and amplitude or multiple characteristics. Figure 4 This represents a two-dimensional image showing the characteristic signal of each of the multiple frequency components acquired by the inspection device 19. This two-dimensional image may also be filtered using filters such as Gaussian filters. Theoretically, if the temperature changes of the first layer L1 and the second layer L2 are set as ΔT1 and ΔT2 respectively, and the temperature coefficients of the first layer L1 and the second layer L2 are set as γ1 and γ2 respectively, then the signal SG, which represents the amplitude and phase of the characteristic signal obtained when laser light is irradiated at each scanning position on the semiconductor device S, is expressed by the following equation (1).

[0041] SG=γ1ΔT1+γ2ΔT2…(1)

[0042] The inspection device 19 has the function of analyzing the characteristic signals of each layer by utilizing such characteristics.

[0043] Here, at least one scan position contained in region A1 of semiconductor device S is preset in the inspection device 19 by the user based on design data. Alternatively, the scan position is automatically specified in the inspection device 19 in advance based on design data. Or, the inspection device 19 may also set the location where the phase component changes least with frequency, as described later, as the scan position.

[0044] Furthermore, the inspection device 19 acquires the phase component θ of the characteristic signal obtained at each scanning position, and analyzes the phase component θ and the square root of the frequency f at each scanning position. 1 / 2 The relationship. Figure 5 This represents plotting the phase component θ and the square root of the frequency f obtained by the inspection device 19. 1 / 2The relationship is illustrated in the diagram. Thus, the analytical points P1, P2, and P12 corresponding to the phase component θ at the scan position within region A1, P2, and P12, respectively, are obtained in a manner with different characteristics.

[0045] Furthermore, the inspection device 19 uses a pre-known resolution point P1 at the scan position as a reference to correct each resolution point of the phase component θ at any scan position obtained as described above, by canceling the phase component θ at resolution point P1. At this time, if the value of the phase component θ changes discontinuously from -π to π (or vice versa) due to the cancellation of the phase component θ, the inspection device 19 performs a process of adding -2π (or 2π) to the phase component θ to maintain the continuity of the phase so as not to hinder subsequent resolution. Figure 6 This represents the plotting of the phase component θ and the square root of the frequency f, corrected by the inspection device 19. 1 / 2 A graph showing the relationship. The phase component θ, thus corrected, is relative to the square root of the frequency f. 1 / 2 The characteristics exhibit different properties across regions A1, A2, and A12. Specifically, the characteristic corresponding to region A1 is one that always has a value close to zero, while the characteristic corresponding to region A2 is a value relative to the square root f of the frequency. 1 / 2 The property with a linear slope α corresponds to the property with an extremum in region A12.

[0046] Furthermore, the characteristics of the phase component θ at any scan position after correction as described above are examined by the inspection device 19, specifically the square root f at different frequencies. 1 / 2 The change between these frequencies exhibits a linear characteristic, which is also a characteristic of the scanning position corresponding to region A2. In this case, when the resolution point only has the first frequency f1 and the second frequency f2, the inspection device 19 can also specify the square root f of the two frequencies f1 and f2. 1 / 2 The characteristics of the scanning positions with relatively large variations are used as the frequency characteristics of the scanning positions corresponding to region A2. Furthermore, the inspection device 19, based on the resolution point P2 of the scanning position corresponding to the specific region A2, uses the square root f of the different frequencies of this resolution point P2... 1 / 2 Using the slope (rate of change) α as a reference, and taking the characteristics of the phase component θ at any scanning position as the object, the phase component θ is compared with the square root of the frequency f. 1 / 2 The rate of change is standardized. Specifically, for the characteristics of any scan position, the horizontal axis is standardized according to Ω = |α| × f. 1 / 2 The characteristic is standardized by scaling. In this case, the slope α can also be obtained from the slope of the straight line that is approximately equal to multiple analytical points P2. If the analytical point P2 has only two points corresponding to the first frequency f1 and the second frequency f2, it can also be obtained from the slope between the two points.

[0047] Figure 7 This is a graph showing the relationship between the phase component θ, standardized by the inspection device 19, and the frequency scaling value Ω. At this time, according to the theoretical formula of the above equation (1), the slope of the phase component θ in the lower frequency region (the region close to zero) is represented by the following equation (2).

[0048] When the modulation frequency is low, the characteristic signal SG reflects the electrical characteristics of the first layer L1 and the second layer L2. However, when the modulation frequency is high, the electrical characteristics of the second layer L2 are not reflected in the characteristic signal.

[0049] Using this property, the inspection device 19 obtains the pixel values ​​of a two-dimensional image represented by a characteristic signal obtained at a sufficiently high modulation frequency, as the temperature coefficient γ1 of the first layer L1. Since the contribution of the second layer L2 is not zero and there are many, the value after applying a filter based on the phase deviation problem and the weight determined by the double bending function is set as the temperature coefficient γ1. According to the filter, the weight is determined as follows. That is, with the amplitude and phase of the pixel of interest set as R0 and θ0 respectively, and the amplitude and phase of its surrounding pixels set as Ri and θi respectively (i = 1, 2, ... N-1, N is a natural number), the value s is calculated by the following equation (3);

[0050]

[0051] Based on this value s, the weight w is determined by the following equation (4).

[0052]

[0053] Furthermore, while referring to the resolution point of the phase component θ at any scan position standardized by the above function, the inspection device 19 calculates the slope (rate of change) β of the resolution point relative to the scaling value Ω near Ω=0. This slope β can be obtained from the slope between the resolution point corresponding to the first frequency f1 and the resolution point corresponding to the second frequency f1, or it can be obtained from the slope of the tangent line of the curve with approximately 3 or more resolution points. Moreover, the inspection device 19 calculates the temperature coefficient γ2 of the scan position by substituting the determined temperature coefficient γ1 of the pixel corresponding to the scan position and the slope β calculated corresponding to the scan position into the above equation (2).

[0054] The inspection device 19 calculates the temperature coefficient γ2 repeatedly for each scanning position, and obtains the temperature coefficient γ1 and temperature coefficient γ2 for each scanning position. In addition, the inspection device 19 outputs the slope β calculated for each scanning position as a two-dimensional image to the input / output module 106 such as a display, and outputs the temperature coefficient γ1 and temperature coefficient γ2 calculated for each scanning position as two-dimensional images representing the electrical characteristics of the first layer L1 and the second layer L2 to the input / output module 106.

[0055] Figure 8 A two-dimensional image G representing the slope β output by the inspection device 19. β An example of Figure 9 The two-dimensional images G representing the temperature coefficients γ1 and γ2 output by the inspection device 19. γ1 G γ2 One example. Thus, in a two-dimensional image G β The above reflects the distribution of the slope β at each scanning position, in each two-dimensional image G. γ1 G γ2 The above figures show the distribution of temperature coefficients γ1 and γ2 at each scanning position.

[0056] Here, in the two-dimensional image G γ1 G γ2 When reflecting temperature coefficients γ1 and γ2, in order to facilitate the analysis of the characteristics of each layer on the image, the inspection device 19 can also calculate the weighted value γ of the amplitude R of the characteristic signal detected by the modulation frequency lock-on detection using the following equations (5) and (6) to reflect the degree of both the first layer L1 and the second layer L2. 1w γ 2w .

[0057]

[0058] In addition, R th It is a threshold used for adjustment to facilitate image observation.

[0059] Next, the flow of the semiconductor device inspection method of this embodiment will be described, which is the parsing and processing sequence of the semiconductor inspection apparatus 1 used in this embodiment targeting the semiconductor device S. Figure 10 This is a flowchart showing the sequence of analytical processing in semiconductor inspection device 1.

[0060] First, when power is supplied to the semiconductor device S via the measuring device 7, the electrical characteristics of the semiconductor device S are measured (step S1). Next, by controlling the operation of the optical scanning device 13 using the inspection device 19, a laser with a modulated intensity at a first frequency f1 is scanned two-dimensionally on the semiconductor device S, and the characteristic signal detected by locking at the first frequency f1 by the lock-in amplifier 15 is obtained in the inspection device 19 (step S2).

[0061] Furthermore, in the inspection device 19, a two-dimensional image representing the two-dimensional distribution of the acquired characteristic signals is obtained (step S3). Subsequently, the modulation frequency of the laser is changed sequentially to a second frequency f1 and a frequency other than the first and second frequencies (step S4), and the processing of steps S2 and S3 is repeated, thereby obtaining multiple characteristic signals that are locked at multiple frequencies f2, ... respectively.

[0062] Next, using the inspection device 19, based on the characteristic signals at each scanning position, the phase component θ of the characteristic signal is analyzed relative to the square root f of the frequency. 1 / 2 Based on the relationship, using the resolution point of the phase component within region A1 of the semiconductor device S as a reference, the resolution point of the phase component θ at any scanning position is corrected (step S5). Furthermore, by using the inspection device 19, the resolution point P2 of the phase component θ at any scanning position is identified from the resolution point of the phase component θ at any scanning position and corresponding to the resolution point P2 of the phase component θ at the scanning position within region A2 of the semiconductor device S. Based on the slope α between these resolution points P2, the rate of change of the resolution point of the phase component θ at any scanning position is standardized (step S6).

[0063] Subsequently, using the inspection device 19, the slope β near Ω=0 of the resolution point of the phase component θ at any standardized scan position is calculated. Based on the temperature coefficient γ1 of the first layer L1 at that scan position, which is obtained separately from the slope β, the temperature coefficient γ2 of the second layer L2 at that scan position is calculated (step S7). Subsequently, by sequentially changing the scan position of the resolution object (step S7), the processing of steps S5 to S7 is repeated to obtain the temperature coefficients γ1 and γ2 of multiple scan positions.

[0064] Furthermore, the temperature coefficients γ1 and γ2 of all scanned positions are weighted and adjusted to a value γ using the inspection device 19. 1w γ 2w (Step S10). Finally, in the inspection device 19, the temperature coefficient γ of each layer L1 and L2 is output. 1w γ 2w A two-dimensional image of the distribution (step S10).

[0065] The semiconductor inspection apparatus 1 described above acquires characteristic signals of the electrical characteristics of the semiconductor device S by scanning a two-dimensional laser modulated with multiple frequencies onto the semiconductor device S, thereby locking and detecting multiple frequency components. Next, using the phase component θ of the characteristic signal at the scan position reflecting the electrical characteristics of the first layer L1 of the semiconductor device S as a reference, the phase component θ of the acquired characteristic signal at any scan position is corrected. Furthermore, using the phase component θ of the characteristic signal at the scan position specifically reflecting the electrical characteristics of the second layer L2 of the semiconductor device S, the phase component θ of the characteristic signal at any scan position is normalized. Finally, the result of the normalized phase component θ of the characteristic signal based on the arbitrary scan position is output. Thus, the layer structure at any scan position of the semiconductor device S can be deduced, and the electrical characteristics corresponding to the stacked structure of the semiconductor device S can be analyzed.

[0066] Furthermore, by correcting the phase component θ as described above, the relative value of the phase component θ at any scan position to the phase component θ of the characteristic signal at the scan position reflecting the electrical characteristics of the first layer L1 can be obtained. Therefore, the layer structure based on the phase component θ can be easily deduced.

[0067] Furthermore, by standardizing the phase component θ as described above, and specifying a scan position based on the frequency characteristics of the phase component θ of the characteristic signal, it is easy to obtain the phase component θ of the characteristic signal reflecting the electrical characteristics of the second layer L2. As a result, the layer structure at any scan position can be easily estimated. Specifically, a scan position is specified where the phase component θ of the corrected characteristic signal varies relatively greatly between different frequencies. In this case, the phase component θ of the characteristic signal reflecting the electrical characteristics of the second layer L2 can be easily obtained. Alternatively, a scan position is specified where the frequency variation of the phase component θ of the corrected characteristic signal is linear. In this case, the phase component θ of the characteristic signal reflecting the electrical characteristics of the second layer L2 can also be easily obtained.

[0068] Furthermore, in this embodiment, by standardizing the phase component θ of the characteristic signal, the frequency characteristic of the phase signal θ of the standardized characteristic signal at any position becomes a waveform that makes the layer structure of the semiconductor device S significant. As a result, the estimation accuracy of the layer structure at any scan position is improved.

[0069] Furthermore, in this embodiment, when standardizing the phase component θ of the characteristic signal, the phase component θ of the scan position reflecting the electrical characteristics of the second layer L2 is used relative to the square root f of the frequency. 1 / 2 The rate of change of the phase component θ at any scan position relative to the square root of the frequency f 1 / 2The rate of change is standardized. Based on this configuration, the frequency characteristics of the phase signal θ of the characteristic signal at any position after standardization become a waveform that makes the layer structure of the semiconductor device S more significant, and the estimation accuracy of the layer structure at any scan position is further improved.

[0070] Furthermore, in this embodiment, the output represents the slope β of the phase component θ of the characteristic signal at any scan position relative to the frequency. This allows visualization of the layer structure at any scan position of the semiconductor device S, and by referring to the visualized image, the electrical characteristics corresponding to the stacked structure of the semiconductor device S can be analyzed.

[0071] Furthermore, in this embodiment, an image representing the temperature coefficient γ1 of the first layer L1 at any scan position and an image representing the temperature coefficient γ2 of the second layer L2 at any scan position are output in parallel. Based on this function, the electrical characteristics of each layer L1 and L2 of the semiconductor device S at any scan position can be visualized, and the electrical characteristics of each layer L1 and L2 of the semiconductor device S can be analyzed based on the visualized images.

[0072] While various embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. Variations may be made without changing the spirit of each patent application, or it may be applied to other aspects.

[0073] For example, the inspection device 19 may also generate and output a two-dimensional distribution image representing the difference between the phase component θ of the characteristic signal detected at a first frequency f1 and the phase component θ of the characteristic signal detected at a second frequency f2 higher than the first frequency f1. For example, such as Figure 11 As shown, it can also be based on the image G representing the phase component θ of the first frequency f1. f1 The image G represents the phase component θ of the second frequency f2. f2 This generates G that reflects each image. f1 G f2 The difference image G of the phase component θ diff Based on such a difference image G diff The depth information of the layer at each scan position of the semiconductor device S is visually obtained. The inspection device 19 outputs a differential image G. diff At this time, the difference of phase component θ can be represented by light and dark and output, or the difference can be converted into hue output by referring to LUT (Look-up Table).

[0074] Alternatively, the semiconductor inspection device 1 can perform a two-dimensional laser scan by repeatedly scanning multiple lines along the semiconductor device S in a direction perpendicular to the lines, thereby alternating the modulation frequency of the one-dimensional scan with a first frequency f1 and a second frequency. For example, the first frequency f1 can be set to 1 Hz and the second frequency to 4 Hz. Figure 12 Representing image G out In one example, the image shows a two-dimensional distribution of the phase component θ generated by locking the detection at each line corresponding to the modulation frequencies f1 and f2 using a semiconductor inspection apparatus 1 with such a variation. Based on this variation, the electrical characteristics of layer L3 located away from the light source 9 and the electrical characteristics of layer L4 located closer to the light source 9 can be easily determined.

[0075] In addition, in the inspection device 19, the square root f based on different frequencies 1 / 2 The characteristics of the phase component θ at the scan position corresponding to region A2 can vary between regions, but the scan position contained in region A2 of the semiconductor device S can also be set by the user in the inspection device 19. Alternatively, the scan position can be automatically specified in advance in the inspection device 19 based on design data.

[0076] In the above embodiments, the semiconductor device S with a two-layer structure including a first layer L1 and a second layer L2 is used as the target, but the inspection device 19 may also have a resolution function for semiconductor devices S with a three-layer structure or more.

[0077] For example, it can also be like Figure 13 The semiconductor device S shown is a multilayer structure comprising a first layer L1 at position 1, a second layer L2 at position 2, and a third layer L3 at position 3, starting from the side closest to the light source 9. In this semiconductor device S, regions A1, A12, A23, and A3 are known according to design data, etc. Region A1 has a current flow path PA only in the first layer L1; region A12 has a path PA in both the first and second layers L1; region A23 has a path PA in both the second and third layers L2; ​​and region A3 has a path PA only in the third layer L3. Furthermore, laser light from the light source 9 is focused onto the first layer L1.

[0078] When using the semiconductor device S configured as described above, the inspection apparatus 19 first performs phase correction and rate-of-change standardization of the characteristic signals at all scan positions based on the characteristic signal of region A1, and performs rate-of-change standardization of the characteristic signals at all scan positions based on the characteristic signal of region A23. Next, using the characteristic signals of region A1 and region A23 as the target, the analysis processing described in the above embodiment is performed, thereby obtaining the temperature coefficient γ1 of the first layer L1 and the temperature coefficient γ2 of the second layer L2 and the third layer L3 at all scan positions. 23 .

[0079] Next, the inspection device 19 performs the analysis processing described above on the characteristic signals of region A3 and region A12, and obtains the temperature coefficient γ3 of the third layer L3 and the temperature coefficient γ of the first layer L1 and the second layer L2 at all scan positions. 12 .

[0080] Based on such a variation example, the electrical characteristics of each layer L1, L2, and L3 at any scanning position can be estimated using a 3-layer semiconductor device as an example.

[0081] Additionally, the inspection device 19 may also have the following functions: Figure 14 The four-layer semiconductor device S shown is the object's parsing function. Figure 14 The semiconductor device S shown has a multilayer structure, which, starting from the side closest to the light source 9, includes a first layer L1 at position 1, a second layer L2 at position 2, a third layer L3 at position 3, and a fourth layer L4 at position 4. In such a semiconductor device S, regions A1 and A234 are known according to design data, etc., wherein region A1 has a current flow path PA only in the first layer L1, and region A234 has paths PA in the second layer L2, the third layer L3, and the fourth layer L4. Furthermore, the laser from the light source 9 irradiates the first layer L1 by focusing the light.

[0082] When using the semiconductor device S configured as described above, the inspection apparatus 19 first performs phase correction on the characteristic signals of all scan positions based on the characteristic signal of region A1, and standardizes the rate of change of the characteristic signals of all scan positions based on the characteristic signal of region A234. Next, using the characteristic signals of region A1 and region A234 as the target, the analytical processing described above is performed to obtain the temperature coefficient γ1 of the first layer L1 and the temperature coefficient γ of the second layer L2, the third layer L3, and the fourth layer L4 at all scan positions. 234Subsequently, the inspection device 19 can perform the above-mentioned analytical processing on the 3-layer semiconductor device S, taking the characteristic signals of each scan position as the target, and obtain the temperature coefficients γ2, γ3, and γ4 of each of the second layer L2 to the fourth layer L4.

[0083] Based on such variations, the electrical characteristics of each layer L1, L2, L3, and L4 at any scan position can be estimated using a 4-layer semiconductor device as an example. Similarly, the electrical characteristics of each layer at any scan position can be estimated using a semiconductor device with 5 or more layers as an example.

[0084] In the above embodiments, it is preferable that, in the correction step, the phase component of the characteristic signal at any scan position is corrected in a manner that cancels out the phase component of the characteristic signal at the first scan position. In the above embodiments, it is preferable that the processor corrects the phase component of the characteristic signal at any scan position in a manner that cancels out the phase component of the characteristic signal at the first scan position. Therefore, the relative value of the phase component at any scan position with respect to the phase component of the characteristic signal at the first scan position reflecting the electrical characteristics of the first position can be obtained, and thus the layer structure based on this phase component can be easily deduced.

[0085] Alternatively, in the standardization step, it is preferable to determine the phase component of the characteristic signal at a specific second scan position based on the change in the phase component of the corrected characteristic signal between the first and second frequencies. Alternatively, it is preferable for the processor to determine the phase component of the characteristic signal at a specific second scan position based on the change in the phase component of the corrected characteristic signal between the first and second frequencies. In this case, by determining the second scan position based on the frequency characteristics of the phase component of the characteristic signal, the phase component of the characteristic signal reflecting the electrical signal at the second position can be easily obtained. As a result, the layer structure at any scan position can be easily estimated.

[0086] Furthermore, it is also preferable that the first position is closer to the light source than the second position. In the standardized steps, the scanning position where the phase component of the corrected characteristic signal changes relatively significantly between the first and second frequencies is designated as the second scanning position. Alternatively, it is also preferable that the first position is closer to the light source than the second position, and the processor designates the scanning position where the phase component of the corrected characteristic signal changes relatively significantly between the first and second frequencies as the second scanning position. In this case, by specifying the second scanning position based on the magnitude of the change in the phase component of the characteristic signal between the two frequencies, the phase component of the characteristic signal reflecting the electrical characteristics of the second position can be easily obtained. As a result, the layer structure at any scanning position can be easily estimated.

[0087] Furthermore, it is preferable that, in the standardization step, the change in the phase component of the characteristic signal at any scan position between the first and second frequencies is used as a reference, and the change in the phase component of the characteristic signal at the second scan position between the first and second frequencies is standardized. Furthermore, it is preferable that the processor uses the change in the phase component of the characteristic signal at the second scan position between the first and second frequencies as a reference, and standardizes the change in the phase component of the characteristic signal at any scan position between the first and second frequencies. According to this configuration, the frequency characteristics of the phase signal of the characteristic signal at any position after standardization become a waveform that makes the layer structure of the semiconductor device significant, and the estimation accuracy of the layer structure at any scan position is improved.

[0088] Furthermore, it is preferable that in the acquisition step, light modulated at a frequency other than the first and second frequencies is scanned to obtain a characteristic signal, and in the standardization step, the scanning position where the change in the phase component of the corrected characteristic signal with respect to the square root of the frequency is linear is taken as the second scanning position. Alternatively, it is preferable that the processor further scans light modulated at a frequency other than the first and second frequencies to obtain a characteristic signal, and the scanning position where the change in the phase component of the corrected characteristic signal with respect to the square root of the frequency is linear is taken as the second scanning position. According to this configuration, by specifying the second scanning position based on the characteristic change of the phase component of the characteristic signal with respect to the square root of the frequency, the phase component of the characteristic signal reflecting the electrical characteristics of the second position can be reliably obtained. As a result, the layer structure at any scanning position can be reliably estimated.

[0089] Furthermore, it is preferable that, in the standardization step, the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency is used to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency. Alternatively, it is preferable that the processor uses the rate of change of the phase component of the characteristic signal at the second scan position relative to the square root of the frequency to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency. According to this configuration, the frequency characteristics of the phase signal of the characteristic signal at any position after standardization become a waveform that makes the layer structure of the semiconductor device more apparent, and the estimation accuracy of the layer structure at any scan position is further improved.

[0090] Furthermore, it is preferable that, in the output step, an image representing the change in phase component of the characteristic signal at any scan position relative to frequency is output. Moreover, it is preferable that the processor outputs an image representing the change in phase component of the characteristic signal at any scan position relative to frequency. With this configuration, the layer structure of the semiconductor device at any scan position can be visualized, and by referring to the visualized image, the electrical characteristics corresponding to the stacked structure of the semiconductor device can be analyzed.

[0091] Furthermore, preferably, in the output step, based on the change in phase component of the characteristic signal at any scan position relative to frequency, at least an image representing the electrical characteristics of a first position at any scan position and an image representing the electrical characteristics of a second position at any scan position are output. Alternatively, it is also preferable that the processor outputs at least an image representing the electrical characteristics of a first position at any scan position and an image representing the electrical characteristics of a second position at any scan position based on the change in phase component of the characteristic signal at any scan position relative to frequency. In this case, the electrical characteristics of each layer of the semiconductor device at any scan position can be visualized, and the electrical characteristics of each layer of the semiconductor device can be analyzed based on the visualized images.

[0092] Industrial availability

[0093] The implementation method is used as a semiconductor device inspection method and semiconductor device inspection apparatus, which can analyze the electrical characteristics corresponding to the stack-up structure of semiconductor devices.

[0094] [Explanation of Symbols]

[0095] 1... Semiconductor inspection device; 3... Voltage application device; 5... Current measuring device; 7... Measuring device; 9... Light source; 11... Signal source; 13... Optical scanning device; 15... Lock-in amplifier (signal acquisition device); 17... Photodetector; 19... Inspection device; 101... CPU (processor); 102... RAM; 103... ROM; 104... Communication module; 106... Input / output module; S... Semiconductor device.

Claims

1. A method for inspecting semiconductor devices, wherein, have: The measurement step involves supplying power to a semiconductor device and simultaneously measuring the electrical characteristics of the semiconductor device corresponding to the power supply. The acquisition step involves scanning the semiconductor device with light modulated at a first frequency and light modulated at a second frequency higher than the first frequency, and acquiring characteristic signals corresponding to the scan that represent the electrical characteristics of the components of the first frequency and the second frequency. The correction step involves using the phase component of the characteristic signal at the first scan position, which reflects the electrical characteristics at the first position along the optical axis of the semiconductor device, as a reference to correct the phase component of the characteristic signal at any scan position. The standardization step involves using the phase component of the characteristic signal at a second scan position that specifically reflects the electrical characteristics of the second position, which is different from the first position, along the optical axis of light in the semiconductor device, to standardize the phase component of the characteristic signal at any scan position. and The output step outputs the phase components of the standardized characteristic signal based on arbitrary scan positions.

2. The semiconductor device inspection method as described in claim 1, wherein, In the correction step, the phase component of the characteristic signal at any scan position is corrected in a manner that cancels out the phase component of the characteristic signal at the first scan position.

3. The semiconductor device inspection method as described in claim 1, wherein, In the standardization step, the phase component of the characteristic signal at a specific second scan position is determined based on the change of the phase component of the corrected characteristic signal between the first frequency and the second frequency.

4. The semiconductor device inspection method as described in claim 2, wherein, In the standardization step, the phase component of the characteristic signal at a specific second scan position is determined based on the change of the phase component of the corrected characteristic signal between the first frequency and the second frequency.

5. The semiconductor device inspection method as described in claim 3, wherein, The first position is a position closer to the light source than the second position. In the standardization step, the scanning position where the phase component of the corrected characteristic signal changes relatively greatly between the first frequency and the second frequency is taken as the second scanning position.

6. The semiconductor device inspection method as described in claim 4, wherein, The first position is a position closer to the light source than the second position. In the standardization step, the scanning position where the phase component of the corrected characteristic signal changes relatively greatly between the first frequency and the second frequency is taken as the second scanning position.

7. The semiconductor device inspection method according to any one of claims 1 to 6, wherein, In the standardization step, the change of the phase component of the characteristic signal at the second scanning position between the first frequency and the second frequency is used as a reference to standardize the change of the phase component of the characteristic signal at any scanning position between the first frequency and the second frequency.

8. The semiconductor device inspection method as described in claim 3, wherein, In the acquisition step, light modulated at frequencies other than the first and second frequencies is then scanned to obtain the characteristic signal. In the standardization step, the second scan position is defined as the scan position where the phase component of the corrected characteristic signal changes linearly with respect to the square root of the frequency.

9. The semiconductor device inspection method as described in claim 4, wherein, In the acquisition step, light modulated at frequencies other than the first and second frequencies is then scanned to obtain the characteristic signal. In the standardization step, the second scan position is defined as the scan position where the phase component of the corrected characteristic signal changes linearly with respect to the square root of the frequency.

10. The semiconductor device inspection method as described in claim 8, wherein, In the standardization step, the rate of change of the phase component of the characteristic signal at the second scan position relative to the square root of the frequency is used to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency.

11. The semiconductor device inspection method as described in claim 9, wherein, In the standardization step, the rate of change of the phase component of the characteristic signal at the second scan position relative to the square root of the frequency is used to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency.

12. The semiconductor device inspection method according to any one of claims 1 to 6, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

13. The semiconductor device inspection method as described in claim 7, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

14. The semiconductor device inspection method as described in claim 8, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

15. The semiconductor device inspection method as described in claim 9, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

16. The semiconductor device inspection method as described in claim 10, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

17. The semiconductor device inspection method as described in claim 11, wherein, In the output step, an image representing the change of the phase component of the characteristic signal relative to the frequency at the arbitrary scan position is output.

18. The semiconductor device inspection method according to any one of claims 1 to 6, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

19. The semiconductor device inspection method as described in claim 7, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

20. The semiconductor device inspection method as described in claim 8, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

21. The semiconductor device inspection method as described in claim 9, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

22. The semiconductor device inspection method as described in claim 10, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

23. The semiconductor device inspection method as described in claim 11, wherein, In the output step, based on the change of phase component of the characteristic signal at the arbitrary scanning position relative to the frequency, at least an image representing the electrical characteristics at the first position of the arbitrary scanning position and an image representing the electrical characteristics at the second position of the arbitrary scanning position are output.

24. A semiconductor device inspection apparatus, wherein, have: A measuring device that supplies power to a semiconductor device and simultaneously measures the electrical characteristics of the semiconductor device in response to the power supply. An optical scanning device that scans the semiconductor device with light modulated at a first frequency and light modulated at a second frequency higher than the first frequency. A signal acquisition device that acquires characteristic signals representing the electrical characteristics of the components of the first frequency and the second frequency corresponding to the optical scan; and The processor processes the aforementioned characteristic signals. The processor: Using the phase component of the characteristic signal at the first scan position, which reflects the electrical characteristics at the first position along the optical axis of the semiconductor device, as a reference, the phase component of the characteristic signal at any scan position is corrected. The phase component of the characteristic signal at a second scan position, specifically reflecting the electrical characteristics at a second position different from the first position along the optical axis of light in the semiconductor device, is used to normalize the phase component of the characteristic signal at any scan position. The output is the phase component of the normalized characteristic signal based on an arbitrary scan position.

25. The semiconductor device inspection apparatus as claimed in claim 24, wherein, The processor corrects the phase component of the characteristic signal at any scan position by canceling out the phase component of the characteristic signal at the first scan position.

26. The semiconductor device inspection apparatus as claimed in claim 24, wherein, The processor determines the phase component of the characteristic signal at a specific second scan position based on the change in the phase component of the modified characteristic signal between the first frequency and the second frequency.

27. The semiconductor device inspection apparatus as claimed in claim 25, wherein, The processor determines the phase component of the characteristic signal at a specific second scan position based on the change in the phase component of the modified characteristic signal between the first frequency and the second frequency.

28. The semiconductor device inspection apparatus as claimed in claim 26, wherein, The first position is a position closer to the light source than the second position. The processor uses the scan position where the phase component of the corrected characteristic signal changes relatively significantly between the first frequency and the second frequency as the second scan position.

29. The semiconductor device inspection apparatus as claimed in claim 27, wherein, The first position is a position closer to the light source than the second position. The processor uses the scan position where the phase component of the corrected characteristic signal changes relatively significantly between the first frequency and the second frequency as the second scan position.

30. The semiconductor device inspection apparatus according to any one of claims 24 to 29, wherein, The processor uses the change in the phase component of the characteristic signal at the second scan position between the first frequency and the second frequency as a reference to standardize the change in the phase component of the characteristic signal at any scan position between the first frequency and the second frequency.

31. The semiconductor device inspection apparatus as claimed in claim 26, wherein, The processor then scans the light whose intensity is modulated at frequencies other than the first and second frequencies to obtain the characteristic signal. The second scan position is defined as the scan position where the phase component of the corrected characteristic signal changes linearly with respect to the square root of the frequency.

32. The semiconductor device inspection apparatus as claimed in claim 27, wherein, The processor then scans the light whose intensity is modulated at frequencies other than the first and second frequencies to obtain the characteristic signal. The second scan position is defined as the scan position where the phase component of the corrected characteristic signal changes linearly with respect to the square root of the frequency.

33. The semiconductor device inspection apparatus as claimed in claim 31, wherein, The processor uses the rate of change of the phase component of the characteristic signal at the second scan position relative to the square root of the frequency to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency.

34. The semiconductor device inspection apparatus as claimed in claim 32, wherein, The processor uses the rate of change of the phase component of the characteristic signal at the second scan position relative to the square root of the frequency to standardize the rate of change of the phase component of the characteristic signal at any scan position relative to the square root of the frequency.

35. The semiconductor device inspection apparatus according to any one of claims 24 to 29, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

36. The semiconductor device inspection apparatus as claimed in claim 30, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

37. The semiconductor device inspection apparatus as claimed in claim 31, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

38. The semiconductor device inspection apparatus as claimed in claim 32, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

39. The semiconductor device inspection apparatus as claimed in claim 33, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

40. The semiconductor device inspection apparatus as claimed in claim 34, wherein, The processor outputs an image representing the change in phase component of the characteristic signal relative to frequency at the arbitrary scan position.

41. The semiconductor device inspection apparatus according to any one of claims 24 to 29, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

42. The semiconductor device inspection apparatus as claimed in claim 30, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

43. The semiconductor device inspection apparatus as claimed in claim 31, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

44. The semiconductor device inspection apparatus as claimed in claim 32, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

45. The semiconductor device inspection apparatus as claimed in claim 33, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

46. ​​The semiconductor device inspection apparatus as claimed in claim 34, wherein, Based on the change in phase component of the characteristic signal at the arbitrary scan position relative to the frequency, the processor outputs at least an image representing the electrical characteristics at the first position of the arbitrary scan position and an image representing the electrical characteristics at the second position of the arbitrary scan position.

Images