Temporary fixing laminated film and method for manufacturing the same, temporary fixing laminated body, and method for manufacturing semiconductor device

Abstract

Disclosed is a method for manufacturing a temporary fixing laminate for temporarily fixing a semiconductor component and a support component. The method for manufacturing the temporary fixing laminate includes a step of providing a first curable resin layer on one side of a metal foil and a second curable resin layer on the other side of the metal foil to obtain the temporary fixing laminate. Also disclosed is a temporary fixing laminate for temporarily fixing a semiconductor component and a support component. The temporary fixing laminate includes a first curable resin layer, a metal foil, and a second curable resin layer in this order.

Description

Technical Field

[0001] This disclosure relates to a temporary fixing laminated film and a method for manufacturing the same, a temporary fixing laminate, and a method for manufacturing a semiconductor device. Background Technology

[0002] In the field of semiconductor devices, technologies related to packages called SIPs (System-in-Packages), which consist of stacked semiconductor elements, have seen significant development in recent years. Since multiple semiconductor elements are stacked in a SIP, there is a requirement to reduce the thickness of these semiconductor elements. To meet this requirement, after mounting an integrated circuit on a semiconductor component (e.g., a semiconductor wafer), processing steps are performed on the semiconductor component, such as grinding the back side of the semiconductor component to reduce its thickness or dicing the semiconductor wafer. This processing of the semiconductor component is typically performed by temporarily fixing the semiconductor component to a support component using a temporary fixing material layer (see, for example, Patent Documents 1-3).

[0003] Semiconductor components that have undergone processing are securely fixed to a support member by a temporary fixing material layer. Therefore, in the manufacturing method of a semiconductor device, it is required to be able to separate the processed semiconductor component from the support member while preventing damage to the semiconductor component. In Patent Document 1, a method for separating such semiconductor components is disclosed by heating the temporary fixing material layer and performing physical separation. Furthermore, Patent Documents 2 and 3 disclose methods for separating semiconductor components by irradiating the temporary fixing material layer with a laser (coherent light).

[0004] Previous technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2012-126803

[0007] Patent Document 2: Japanese Patent Application Publication No. 2016-138182

[0008] Patent Document 3: Japanese Patent Application Publication No. 2013-033814 Summary of the Invention

[0009] The technical problem to be solved by the invention

[0010] However, the method disclosed in Patent Document 1 has the following problems: damage caused by thermal processes occurs on the semiconductor wafer, resulting in a decrease in yield. On the other hand, the methods disclosed in Patent Documents 2 and 3 have the following problems: (i) the laser irradiation area is narrow and the entire semiconductor component needs to be irradiated repeatedly multiple times; (ii) the laser focus needs to be controlled for scanning irradiation, thus making the process complicated; and (iii) expensive equipment is required.

[0011] The main objective of this disclosure is to provide a temporary fixing laminated film and a method thereof that can form a temporary fixing material layer with excellent separability between the temporarily fixed semiconductor component and the support component.

[0012] means for solving technical problems

[0013] Through in-depth research, the inventors discovered that by using a laminated film comprising a metal foil and two curable resin layers sandwiching the metal foil as a temporary fixing material layer, it is possible to separate the temporarily fixed semiconductor component and the support component with lower light irradiation energy, thus completing the invention disclosed herein.

[0014] One aspect of this disclosure relates to a method for manufacturing a temporary fixing laminate for temporarily fixing a semiconductor component and a support component. The method includes the steps of: depositing a first curable resin layer on one side of a metal foil and a second curable resin layer on the other side of the metal foil to obtain the temporary fixing laminate. Based on the temporary fixing laminate obtained by this manufacturing method, a temporary fixing material layer with excellent separability between the temporarily fixed semiconductor component and the support component can be formed. The reason why the temporary fixing material layer formed by the temporary fixing laminate exhibits this effect is not necessarily clear, but the inventors believe that this is because the diffusion of heat generated in the metal foil within the temporary fixing material layer to the support component through light irradiation can be suppressed, thereby enabling the temperature rise of the temporary fixing material layer to be promoted with lower light irradiation energy.

[0015] From the perspective of high expansion coefficient and high thermal conductivity, the metal constituting the metal foil can be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium and aluminum.

[0016] Another aspect of this disclosure relates to a temporary fixing laminate for temporarily fixing semiconductor components and support components. The temporary fixing laminate sequentially comprises a first curable resin layer, a metal foil, and a second curable resin layer. The metal constituting the metal foil may be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

[0017] Another aspect of this disclosure relates to a temporary fixing laminate. This temporary fixing laminate includes a support member and a temporary fixing material layer disposed on the support member. The temporary fixing material layer sequentially comprises a first curable resin layer, a metal foil, and a second curable resin layer from the support member. According to this temporary fixing laminate, having a temporary fixing material layer sequentially comprising a first curable resin layer, a metal foil, and a second curable resin layer, it is possible to separate the temporarily fixed semiconductor component from the support member with lower light irradiation energy. This is believed to be because, similarly to the above, the diffusion of heat generated in the metal foil within the temporary fixing material layer to the support member through light irradiation can be suppressed, thereby enabling a temperature rise in the temporary fixing material layer with lower light irradiation energy.

[0018] Another aspect of this disclosure relates to a method for manufacturing a semiconductor device. This method includes: a step of preparing the aforementioned temporary fixing laminate; a step of temporarily fixing a semiconductor component to a support member via a temporary fixing material layer; a step of processing the semiconductor component temporarily fixed to the support member; and a step of irradiating the temporary fixing laminate with light from the support member side to separate the semiconductor component from the support member. According to this semiconductor device manufacturing method, by using the aforementioned temporary fixing laminate, it is possible to separate the temporarily fixed semiconductor component from the support member with lower light irradiation energy.

[0019] Light can be incoherent. Incoherent light can be light that contains at least infrared light.

[0020] The light source can be a xenon lamp.

[0021] Invention Effects

[0022] According to this disclosure, a temporary fixing laminate film capable of forming a temporary fixing material layer with excellent separability between a temporarily fixed semiconductor component and a support component is provided, as well as a method for manufacturing the same. Furthermore, according to this disclosure, a temporary fixing laminate having such a temporary fixing material layer is provided, and a method for manufacturing a semiconductor device using the temporary fixing laminate is provided. Attached Figure Description

[0023] Figure 1 This is a schematic cross-sectional view showing one embodiment of a laminated membrane for temporary fixation.

[0024] Figure 2 This is a schematic cross-sectional view showing one embodiment of a temporarily fixed laminate.

[0025] Figure 3 middle, Figure 3 (a) and Figure 3 (b) is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device.

[0026] Figure 4 middle, Figure 4 (a) Figure 4 (b) and Figure 4 (c) is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device.

[0027] Figure 5 middle, Figure 5 (a) and Figure 5 (b) is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. Detailed Implementation

[0028] Hereinafter, embodiments of the present disclosure will be described with appropriate reference to the accompanying drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, unless otherwise indicated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in the figures are conceptual, and the relative sizes of the constituent elements are not limited to the relationships shown in the figures.

[0029] The numerical values ​​and their ranges in this specification are the same and do not limit this disclosure. In this specification, the numerical range represented by "~" indicates the range in which the values ​​described before and after "~" are respectively the minimum and maximum values. In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range can be replaced by the upper or lower limit value of other numerical ranges described in stages. Furthermore, the upper or lower limit value of the numerical range described in this specification can be replaced by the values ​​shown in the embodiments.

[0030] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate, (meth)acryloyl, etc.

[0031] [Laminated film for temporary fixation]

[0032] Figure 1 This is a schematic cross-sectional view showing one embodiment of a laminated membrane for temporary fixation. Figure 1The temporary fixing laminate 10 shown is a temporary fixing laminate used for temporarily fixing semiconductor components and support components. More specifically, in the manufacture of semiconductor devices, the temporary fixing laminate 10 is used to form a layer (temporary fixing material layer) for temporarily fixing semiconductor components to support components during the processing of semiconductor components. The temporary fixing laminate 10 sequentially includes a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16. In other words, the temporary fixing laminate 10 includes: a metal foil 12; a first curable resin layer 14 disposed on a first surface 12a of the metal foil 12; and a second curable resin layer 16 disposed on a second surface 12b of the metal foil 12 opposite to the first surface 12a. According to this temporary fixing laminate, a temporary fixing material layer with excellent separability between the temporarily fixed semiconductor component and the support component can be formed.

[0033] The metal foil 12 can be a metal foil formed from a metal that absorbs light and generates heat. The metal foil 12 can be a metal foil formed from a metal that absorbs light including infrared light and generates heat. Examples of metals constituting such a foil include single metals such as silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum; and alloys such as SUS, nickel-chromium alloys, duralumin, bronze, cupronickel, brass, and steel. From the viewpoint of high coefficient of thermal expansion and high thermal conductivity, the metal constituting the metal foil 12 can be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum, or it can be copper. The metal foil can include, for example, a glossy surface and a non-glossy surface. When the first curable resin layer 14 of the temporary fixing laminate 10 is attached to the support member to form a temporary fixing material layer, light reflection during light irradiation can be suppressed; therefore, it is preferable that the first surface 12a of the metal foil 12 in the temporary fixing laminate 10 is a non-glossy surface.

[0034] From the viewpoint of operability in manufacturing the laminated film for temporary fixation, the thickness of the metal foil 12 can be, for example, greater than 5 μm, 6 μm or more, or 8 μm or more. From the viewpoint of promoting temperature rise by suppressing heat dissipation, the thickness of the metal foil 12 can be, for example, less than 100 μm, less than 80 μm, less than 60 μm, less than 50 μm, less than 40 μm, less than 30 μm or less, or less than 20 μm.

[0035] The first curable resin layer 14 and the second curable resin layer 16 are layers containing a curable resin component that is cured by heat or light, or they may be layers formed from the curable resin component. The curable resin component may be a curable resin component that is cured by heat or light. The components constituting the curable resin component in the first curable resin layer 14 and the components constituting the curable resin component in the second curable resin layer 16 may be the same as each other or different from each other. From the viewpoint of manufacturing a laminated film for temporary fixation, it is preferable that the curable resin components (each component constituting the curable resin component) in the first curable resin layer 14 and the curable resin components (each component constituting the curable resin component) in the second curable resin layer 16 are the same as each other.

[0036] The curable resin component may be, for example, a curable resin component that includes thermoplastic resin and thermosetting resin.

[0037] Thermoplastic resins can be resins that are thermoplastic or resins that are at least thermoplastic in their uncured state and form a cross-linked structure upon heating. Examples of thermoplastic resins include hydrocarbon resins, polycarbonates, polyphenylene sulfide, polyethersulfone, polyetherimide, polyimide, petroleum resins, and phenolic varnish resins. These can be used alone or in combination of two or more. Among these, the thermoplastic resin can be a hydrocarbon resin.

[0038] Hydrocarbon resins are resins whose main backbone is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-nonconjugated diene copolymers, ethylene-1-butene-nonconjugated diene copolymers, ethylene-propylene-1-butene-nonconjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butene-styrene block copolymers (SEBS), and styrene-ethylene-propylene-styrene block copolymers (SEPS). These hydrocarbon resins can be hydrogenated. Furthermore, these hydrocarbon resins can be modified with carboxyl groups using maleic anhydride or similar substances. Among these, hydrocarbon resins may include hydrocarbon resins containing monomer units derived from styrene (styrene-based resins), or styrene-ethylene-butene-styrene block copolymers (SEBS).

[0039] The thermoplastic resin's temperature gradient (Tg) can be -100 to 500°C, -50 to 300°C, or -50 to 50°C. There is a tendency that if the thermoplastic resin's Tg is below 500°C, flexibility is easily ensured when forming a film-like temporary fixing material, thereby improving low-temperature adhesion. Conversely, if the thermoplastic resin's Tg is above -100°C, the reduction in operability and peelability caused by excessive flexibility can be suppressed when forming a film-like temporary fixing material.

[0040] The Tg of a thermoplastic resin is the glass transition temperature at the midpoint obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the glass transition temperature at the midpoint calculated by measuring the heat change under conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, using a method based on JIS K 7121.

[0041] The weight-average molecular weight (Mw) of thermoplastic resins can range from 10,000 to 5,000,000 or from 100,000 to 2,000,000. There is a tendency that if the weight-average molecular weight is above 10,000, it is easier to ensure the heat resistance of the formed temporary fixing material layer. Conversely, if the weight-average molecular weight is below 5,000,000, it is easier to suppress the reduction in flowability and adhesion when forming a film-like temporary fixing material layer or resin layer. Furthermore, the weight-average molecular weight is a polystyrene conversion value obtained using gel permeation chromatography (GPC) and a calibration curve based on standard polystyrene.

[0042] The content of thermoplastic resin, for example, relative to 100 parts by mass of the total curing resin component, can be 40 to 90 parts by mass. The content of thermoplastic resin, for example, relative to 100 parts by mass of the total curing resin component, can be 50 parts by mass or more, or 60 parts by mass or more, or 85 parts by mass or less, or 80 parts by mass or less. There is a tendency that if the content of thermoplastic resin is within the above range, the film formation and flatness of the temporary fixing material layer are more excellent.

[0043] Thermosetting resin refers to resin that cures by heat, and does not include the aforementioned thermoplastic resin (hydrocarbon resin). Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea-formaldehyde resins, etc. These can be used alone or in combination of two or more. Among these, thermosetting resins have superior heat resistance, workability, and reliability, and therefore can be epoxy resins. Thermosetting resins can be used in combination with thermosetting resin curing agents (epoxy resin curing agents when epoxy resin is used as the thermosetting resin).

[0044] There are no particular limitations on epoxy resins as long as they possess heat resistance upon curing. Examples of epoxy resins include difunctional epoxy resins such as bisphenol A type epoxy, phenolic varnish type epoxy resins such as phenolic varnish type epoxy resins and cresol phenolic varnish type epoxy resins, and alicyclic epoxy resins such as dicyclopentadiene type epoxy resins. Furthermore, epoxy resins can be, for example, polyfunctional epoxy resins, glycidylamine type epoxy resins, or heterocyclic epoxy resins. Among these, from the viewpoint of heat resistance and weather resistance, alicyclic epoxy resins can be included.

[0045] When epoxy resin is used as a thermosetting resin, the curing resin component may include an epoxy resin curing agent. Commonly used and known curing agents can be used as epoxy resin curing agents. Examples of epoxy resin curing agents include amines; polyamides; acid anhydrides; polysulfides; boron trifluoride; bisphenols such as bisphenol A, bisphenol F, and bisphenol S, which have two or more phenolic hydroxyl groups in one molecule; phenolic varnish resins; bisphenol A phenolic varnish resins; cresol phenolic varnish resins; phenolic aralkyl resins; and other phenolic resins.

[0046] 4. The total content of thermosetting resin and thermosetting resin curing agent relative to 100 parts by mass of the total curable resin component can be 10 to 60 parts by mass. The total content of thermosetting resin and thermosetting resin curing agent relative to 100 parts by mass of the total curable resin component can be 15 parts by mass or more, or 20 parts by mass or more, or 50 parts by mass or less, or 40 parts by mass or less. There is a tendency that if the total content of thermosetting resin and thermosetting resin curing agent is within the above range, the film formation properties, flatness, heat resistance, etc. of the temporary fixing material layer are more superior.

[0047] The curing resin component may also contain curing accelerators. Examples of curing accelerators include imidazole derivatives, dicyandiamine derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, and tetraphenyl borate tetraphenyl. Examples include 2-ethyl-4-methylimidazolium-tetraphenylboronic acid and 1,8-diazabicyclo[5,4,0]undec-7-tetraphenylboronic acid. These can be used alone or in combination of two or more.

[0048] The content of the curing accelerator relative to 100 parts by weight of the total thermosetting resin and thermosetting resin curing agent can be 0.01 to 5 parts by weight. There is a tendency that if the content of the curing accelerator is within the above range, the curability is improved and the heat resistance is more excellent.

[0049] The curable resin component may also include a polymerizable monomer and a polymerization initiator. There are no particular limitations on the polymerizable monomer, as long as it is a polymerizable monomer that polymerizes by heating or irradiation with ultraviolet light. From the viewpoint of material selectivity and ease of availability, the polymerizable monomer can be, for example, a compound with polymerizable functional groups such as an olefinic unsaturated group. Examples of polymerizable monomers include (meth)acrylates, difluoroethylene, vinyl ethers, vinyl esters, vinylpyridine, vinylamides, and vinyl arylates. Among these, the polymerizable monomer can be (meth)acrylate. (Meth)acrylate can be monofunctional (1-functional), difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it can also be a (meth)acrylate with more than two functionalities.

[0050] Examples of monofunctional (meth)acrylates include (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxy polyethylene glycol (meth)acrylate, ethoxy polyethylene glycol (meth)acrylate, methoxy polypropylene glycol (meth)acrylate, ethoxy polypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl)succinate (succin) Aliphatic (meth)acrylates such as methacrylate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-isopropylphenylphenoxyethyl (Cumylphenoxy)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthyl)propyl (meth)acrylate, 2-hydroxy-3-(2-naphthyl)propyl (meth)acrylate, etc. Aromatic (meth)acrylates, etc.

[0051] Examples of difunctional (meth)acrylates include ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, propylene glycol dimethacrylate, dipropylene glycol dimethacrylate, tripropylene glycol dimethacrylate, tetrapropylene glycol dimethacrylate, polypropylene glycol dimethacrylate, ethoxylated polypropylene glycol dimethacrylate, 1,3-butanediol dimethacrylate, 1,4-butanediol dimethacrylate, pentaerythritol dimethacrylate, 3-methyl-1,5-pentanediol dimethacrylate, 1,6-hexanediol dimethacrylate, and 2-butyl-2-ethyl-1,3-propanediol dimethacrylate. Aliphatic (meth)acrylates such as acrylates, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecanediethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; aromatic (meth)acrylates such as ethoxylated bisphenol A type di(meth)acrylate, propoxylated bisphenol A type di(meth)acrylate, ethoxylated propoxylated bisphenol A type di(meth)acrylate, ethoxylated bisphenol F type di(meth)acrylate, propoxylated bisphenol F type di(meth)acrylate, ethoxylated propoxylated bisphenol F type di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0052] Examples of multifunctional (meth)acrylates with three or more functions include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, and so on. Aliphatic (meth) acrylates such as methacrylates, pentaerythritol tetra(meth)acrylates, ethoxylated pentaerythritol tetra(meth)acrylates, propoxylated pentaerythritol tetra(meth)acrylates, ethoxylated propoxylated pentaerythritol tetra(meth)acrylates, di(trimethylolpropane)tetraacrylate, dipentaerythritol hexa(meth)acrylates; aromatic epoxy (meth) acrylates such as phenolic varnish epoxy (meth)acrylates and cresolic varnish epoxy (meth)acrylates.

[0053] These (meth)acrylates can be used alone or in combination of two or more. Furthermore, these (meth)acrylates can be used in combination with other polymerizable monomers.

[0054] When the curable resin component also contains polymerizable monomers, the content of polymerizable monomers relative to 100 parts by mass of the total curable resin component can be 10 to 60 parts by mass.

[0055] There are no particular restrictions on the polymerization initiator, as long as it is a polymerization initiator that initiates polymerization by heating or irradiation with ultraviolet light. For example, when using a compound with an olefinic unsaturated group as a polymerizable monomer, the polymerization initiator can be a thermal free radical polymerization initiator or a photofree radical polymerization initiator.

[0056] Examples of diacyl peroxides that can be used as initiators for thermal free radical polymerization include octanoyl peroxide, lauryl peroxide, octadecyl peroxide, and benzoyl peroxide; tert-butyl peroxy pentavalerate, tert-hexyl peroxy pentavalerate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanol peroxide)hexane, tert-hexyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxyisobutyrate, and isopropyl peroxymonocarbonate. Peroxide esters such as tert-hexyl ester, tert-butylperoxy-3,5,5-trimethylhexanoate, tert-butylperoxylaurate, tert-butyl peroxyisopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl carbonate, tert-butyl peroxybenzoate, tert-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and tert-butyl peracetate; azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylpentanonitrile), and 2,2'-azobis(4-methoxy-2'-dimethylpentanonitrile).

[0057] Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0058] These thermal free radical polymerization initiators and photofree radical polymerization initiators can be used alone or in combination of two or more.

[0059] When the curable resin component also contains polymerizable monomers and polymerization initiators, the content of polymerization initiators relative to 100 parts by mass of the total polymerizable monomers can be 0.01 to 5 parts by mass.

[0060] Curing resin components may also include insulating fillers, sensitizers, antioxidants, and other components.

[0061] To impart low thermal expansion and low moisture absorption to the resin layer, insulating fillers can be added. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titanium dioxide, glass, and ceramics. These insulating fillers can be used alone or in combination of two or more. From the viewpoint of dispersibility with solvents, the insulating filler can be particles whose surfaces have been treated with a surface-treatment agent. Surface-treatment agents can be, for example, silane coupling agents.

[0062] When the curable resin component also contains insulating fillers, the content of the insulating fillers relative to 100 parts by mass of the total curable resin component can be 5 to 20 parts by mass. There is a tendency that if the content of the insulating fillers is within the above range, the heat resistance can be further improved without hindering light transmission. Furthermore, if the content of the insulating fillers is within the above range, it may also contribute to light peel resistance.

[0063] Examples of sensitizers include anthracene, phenanthrene, phenanthrene, benzo[a]pyrene, propylene fluorene, rubrogene, pyrene, xanthonone, tanstanone, thioxanthracene-9-one, 2-isopropyl-9H-thioxanthracene-9-one, 4-isopropyl-9H-thioxanthracene-9-one, and 1-chloro-4-propoxythioxanthracene.

[0064] When the curable resin component also contains a sensitizer, the content of the sensitizer relative to 100 parts by mass of the total curable resin component can be 0.01 to 10 parts by mass. There is a tendency that if the content of the sensitizer is within the above range, it has little impact on the properties and film properties of the curable resin component.

[0065] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenolic derivatives such as 4-methoxyphenol and 4-tert-butylcatechol (hindered phenolic derivatives), aminooxy derivatives such as 2,2,6,6-tetramethylpiperidin-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxy, and hindered amine derivatives such as tetramethylpiperidinyl methacrylate.

[0066] When the curing resin component also contains antioxidants, the antioxidant content can be 0.1 to 10 parts by mass relative to 100 parts by mass of the total curing resin component. There is a tendency that if the antioxidant content is within the above range, the decomposition of the curing resin component is inhibited, thus preventing contamination.

[0067] From the viewpoint of light transmittance, the thickness of the first curable resin layer 14 can be, for example, 200 μm or less. The thickness of the first curable resin layer 14 can also be 0.1 to 150 μm or 1 to 100 μm.

[0068] From the perspective of stress relaxation, the thickness of the second curable resin layer 16 can be, for example, 200 μm or less. The thickness of the first curable resin layer 14 can also be 1 to 150 μm or 10 to 100 μm.

[0069] The thicknesses of the first curable resin layer 14 and the second curable resin layer 16 may be the same or different from each other. For example, the thickness of the first curable resin layer 14 may be less than the thickness of the second curable resin layer 16. From the viewpoint of manufacturing a laminated film for temporary fixation, it is preferable that the thicknesses of the first curable resin layer 14 and the second curable resin layer 16 are the same.

[0070] From the viewpoint of operability of the laminated film for temporary fixation, the thickness of the laminated film 10 for temporary fixation (the total of the first curable resin layer 14, the metal foil 12, and the second curable resin layer 16) can be 10 μm or more, 30 μm or more, or 50 μm or more, and from the viewpoint of easy peeling based on light irradiation, it can be 400 μm or less, 300 μm or less, or 200 μm or less.

[0071] [Manufacturing method of laminated film for temporary fixation]

[0072] One embodiment of the manufacturing method of the temporary fixing laminate 10 includes the following steps: providing a first curable resin layer 14 on one side of a metal foil 12 and providing a second curable resin layer 16 on the other side of the metal foil 12 to obtain the temporary fixing laminate 10. In other words, the manufacturing method of the temporary fixing laminate 10 includes the following steps: providing a first curable resin layer 14 on the first surface 12a side of the metal foil 12 and providing a second curable resin layer 16 on the side of the metal foil 12 opposite to the first surface 12a, i.e., the second surface 12b side, to obtain the temporary fixing laminate 10.

[0073] The manufacturing method of the temporary fixing laminate 10 may include, for example, a step of providing a first curable resin layer 14 on one side (first side 12a) of the metal foil 12 (step 1); and a step of providing a second curable resin layer 16 on the other side (second side 12b) of the metal foil 12 (step 2). Regarding the manufacturing method of the temporary fixing laminate 10, the order of the first and second steps is not particularly limited as long as curable resin layers (first curable resin layer 14 and second curable resin layer 16) can be provided on both sides of the metal foil 12.

[0074] In the first step, for example, the curable resin component is first dissolved or dispersed in a solvent by stirring, mixing, kneading, or otherwise mixing it to prepare a varnish containing the curable resin component. Then, the varnish containing the curable resin component is applied to a support film that has undergone a demolding treatment using a doctor blade coater, roller coater, applicator, corner roller coater, or die coater. The solvent is then evaporated by heating, thereby forming a first curable resin film composed of the curable resin component on the support film. At this time, the thickness of the first curable resin film (and consequently the first curable resin layer 14) can be adjusted by adjusting the amount of varnish applied. Next, the first curable resin layer 14 can be formed by attaching the first curable resin film to one side of the metal foil 12.

[0075] In the preparation of varnishes containing curable resin components, there are no particular restrictions on the solvents used, as long as they possess the property of uniformly dissolving or dispersing the various components. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-isopropyltoluene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents can be used alone or in combination of two or more. From the viewpoint of solubility and boiling point, toluene, xylene, heptane, or cyclohexanone are suitable solvents. Based on the total mass of the varnish, the concentration of solid components in the varnish can be 10 to 80 by mass.

[0076] The mixing or kneading of varnishes containing curable resin components can be carried out using equipment such as mixers, crushers, three-roll mills, ball mills, bead mills, and homogeneous dispersers.

[0077] Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PET), and polyethylene naphthalate (PET); polyolefins such as polyethylene and polypropylene; and films made of polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymers. The thickness of the support film can be, for example, 1–250 μm.

[0078] The heating conditions for evaporating the solvent from the curable resin component of the varnish coated on the support film can be appropriately set depending on the solvent used. For example, the heating conditions can be 40 to 120°C for 0.1 to 30 minutes.

[0079] Methods for attaching the first curable resin film to one surface of the metal foil 12 include, for example, hot pressing, roller lamination, and vacuum lamination. Lamination can be performed, for example, at temperatures ranging from 0 to 120°C.

[0080] From the viewpoint of light transmittance, the thickness of the first curable resin film can be, for example, 200 μm or less. The thickness of the first curable resin film can also be 0.1 to 150 μm or 1 to 100 μm.

[0081] The first curable resin layer 14 can also be formed by directly applying the curable resin component to one surface of the metal foil 12. In the case of using a varnish containing a curable resin component, it can also be formed by applying the varnish containing the curable resin component to one surface of the metal foil 12 and evaporating the solvent by heating.

[0082] In the second step, a second curable resin film is prepared in the same manner as in the first step, and the second curable resin film is attached to the other side of the metal foil 12, thereby forming a second curable resin layer 16. The second curable resin layer 16 can also be formed by directly coating the curable resin component onto the other surface of the metal foil 12. If a varnish containing the curable resin component is used, it can also be formed by coating the varnish containing the curable resin component onto the other surface of the metal foil 12 and evaporating the solvent by heating. In this way, a temporary fixing laminated film 10 can be obtained.

[0083] From the perspective of stress relaxation, the thickness of the second curable resin film can, for example, be less than 200 μm. The thickness of the second curable resin film can also be 1–150 μm or 10–100 μm.

[0084] The thicknesses of the first curable resin film and the second curable resin film can be the same or different. For example, the thickness of the first curable resin film can be less than the thickness of the second curable resin film. From the viewpoint of manufacturing a laminated film for temporary fixation, it is preferable that the thicknesses of the first curable resin film and the second curable resin film are the same.

[0085] A method for manufacturing the temporary fixing laminated film 10 may include, for example, a step of preparing a laminate formed by sequentially stacking a first curable resin film, a metal foil, and a second curable resin film; and a step of attaching the first curable resin film and the second curable resin film of the laminated film to both sides of the metal foil. With this manufacturing method, the application process of the curable resin film is completed in one step, thus enabling more efficient manufacturing of the temporary fixing laminated film 10. The method of attaching the first curable resin film and the second curable resin film to both sides of the metal foil can be the same as the first step.

[0086] [Laminated structure for temporary fixation]

[0087] Figure 2 This is a schematic cross-sectional view showing one embodiment of a temporarily fixed laminate. Figure 2 The temporary fixing laminate 20 shown includes a support member 22 and a temporary fixing material layer 10A disposed on the support member 22. The temporary fixing material layer 10A sequentially comprises a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 from the support member 22. Specifically, the temporary fixing material layer 10A comprises: a metal foil 12; a first curable resin layer 14 disposed on a first surface 12a of the metal foil 12; and a second curable resin layer 16 disposed on a second surface 12b of the metal foil 12 opposite to the first surface 12a. The second curable resin layer 16 includes the outermost surface S of the temporary fixing material layer 10A opposite to the support member 22. With this temporary fixing laminate 20, which includes a temporary fixing material layer 10A comprising a first curable resin layer 14, a metal foil 12, and a second curable resin layer 16 sequentially, the temporarily fixed semiconductor component can be separated from the support member with lower light irradiation energy.

[0088] The metal foil 12 may include, for example, a glossy surface and a non-glossy surface. In this case, the first surface 12a of the metal foil 12 can suppress the reflection of light during illumination, and therefore can be a non-glossy surface.

[0089] The manufacturing method of the temporary fixing laminate 20 is not particularly limited as long as a laminate with a specified structure can be obtained. For example, the temporary fixing laminate 20 can also be obtained by a method including a step of attaching the aforementioned temporary fixing laminate 10 to the support member 22. In this case, the temporary fixing material layer 10A can be a layer formed from the aforementioned temporary fixing laminate 10. When the first curable resin layer 14 of the temporary fixing laminate 10 is attached to the support member 22, the first surface 12a of the metal foil 12 in the temporary fixing laminate 10 can be a non-glossy surface.

[0090] The support member 22 is a plate-shaped body with high transmittance and capable of withstanding the load received by the semiconductor component during processing. Examples of support members 22 include inorganic glass substrates and transparent resin substrates.

[0091] The thickness of the support member 22 can be, for example, 0.1 to 2.0 mm. There is a tendency that if the thickness of the support member 22 is 0.1 mm or more, it is easier to operate. There is a tendency that if the thickness of the support member 22 is 2.0 mm or less, material costs can be controlled.

[0092] As a method for attaching the temporary fixing laminated film 10 to the support member 22, examples include hot pressing, roller lamination, and vacuum lamination. Lamination can be performed, for example, at temperatures ranging from 0 to 120°C.

[0093] The temporary fixing laminate 20 can also be obtained by methods other than the method that includes attaching the temporary fixing laminate 10 to the support member 22. For example, the temporary fixing laminate 20 can also be obtained by methods including: a method that includes a step of preparing the support member 22 and a step of laminating and attaching the first curable resin layer 14, the metal foil 12 and the second curable resin layer 16 to the support member 22; and a method that includes a step of preparing a first laminate having a support member and a first curable resin layer disposed on the support member and a second laminate having a metal foil and a second curable resin layer disposed on the metal foil, and a step of attaching the first curable resin layer 14 of the first laminate and the metal foil 12 of the second laminate, etc.

[0094] [Semiconductor device manufacturing method]

[0095] One embodiment of a semiconductor device manufacturing method includes: a step of preparing the aforementioned temporary fixing laminate (preparation step); a step of temporarily fixing a semiconductor component to a support member via a temporary fixing material layer (temporary fixing step); a step of processing the semiconductor component temporarily fixed to the support member (processing step); and a step of irradiating the temporary fixing laminate with light from the support member side to separate the semiconductor component from the support member (separation step). According to this semiconductor device manufacturing method, by using the aforementioned temporary fixing laminate, it is possible to separate the temporarily fixed semiconductor component from the support member with lower light irradiation energy.

[0096] (Preparation process)

[0097] In the preparation process, in order to manufacture a semiconductor device, the aforementioned temporary fixing laminate 20 is prepared for temporarily fixing the semiconductor component to the support component during the processing of the semiconductor component.

[0098] (Temporary fixed process)

[0099] Figure 3 (a) and Figure 3 (b) is a schematic cross-sectional view illustrating one embodiment of a method for manufacturing a semiconductor device. In the temporary fixing process, the semiconductor component 40 is temporarily fixed to the support member 22 via a temporary fixing material layer 10A. The outermost surface S of the side of the temporary fixing material layer 10A where the semiconductor component is temporarily fixed is the surface of the second curable resin layer 16. For example, the state in which the semiconductor component 40 is disposed on the second curable resin layer 16 (see reference). Figure 3 (a) The second curable resin layer 16 (and the first curable resin layer 14) are cured, thereby temporarily fixing the semiconductor component 40 to the support component 22 (see reference). Figure 3 (b) In other words, the semiconductor component 40 can be temporarily bonded to the support component 22 via a temporary fixing material layer 10Ac having a cured second curable resin layer 16c (and a cured first curable resin layer 14c). In this way, a temporary fixing laminate 20c is formed.

[0100] Semiconductor component 40 may have a semiconductor substrate 42 and a redistribution layer 44. When semiconductor component 40 has a semiconductor substrate 42 and a redistribution layer 44, semiconductor component 40 is temporarily fixed to support component 22 by a temporary fixing material layer 10A in the direction where the redistribution layer is located on the side of the second curable resin layer 16. Semiconductor component 40 may also have external connection terminals. Semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dicing a semiconductor wafer. Figure 3In example (a), multiple semiconductor components 40 are disposed on the second curable resin layer 16, but the number of semiconductor components 40 may also be one. From the viewpoint of suppressing cracks during handling and processing steps, in addition to miniaturization and thinning of semiconductor devices, the thickness of the semiconductor component 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm.

[0101] The semiconductor component 40 disposed on the second curable resin layer 16 is pressed onto the second curable resin layer 16, for example, using a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions can be a pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120–200°C, and a holding time of 100–300 seconds. When using a vacuum laminator, the pressing conditions can be, for example, a pressure of 1 hPa or less, a pressing temperature of 60–180°C or 80–150°C, a lamination pressure of 0.01–1.0 MPa or 0.1–0.7 MPa, and a holding time of 1–600 seconds or 30–300 seconds.

[0102] After the semiconductor component 40 is disposed on the second curable resin layer 16, the second curable resin layer 16 (and the first curable resin layer 14) is thermo-cured or photo-cured, thereby temporarily fixing the semiconductor component 40 to the support component 22 by means of a temporary fixing material layer 10Ac having the cured second curable resin layer 16c (and the cured first curable resin layer 14c). The thermo-curing conditions can be, for example, below 300°C or 100-250°C, for 1-180 minutes or 1-120 minutes.

[0103] (Processing steps)

[0104] Figure 4 (a) Figure 4 (b) and Figure 4 (c) is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. In the processing step, the semiconductor component 40, which is temporarily fixed to the support member 22, is processed. Figure 4 (a) illustrates an example of a process that includes thinning a semiconductor substrate. The processing of semiconductor components is not limited to this, and may include, for example, thinning of a semiconductor substrate, dicing (cutting) of semiconductor components, formation of through electrodes, etching, plating reflow, sputtering, or combinations thereof.

[0105] After processing semiconductor component 40, such as Figure 4As shown in (b), a sealing layer 50 is formed to seal the processed semiconductor component 40. The sealing layer 50 can be formed using sealing materials commonly used in the manufacture of semiconductor elements. For example, the sealing layer 50 can be formed from a thermosetting resin composition. Examples of thermosetting resin compositions used in the sealing layer 50 include epoxy resins such as cresol phenolic varnish epoxy resin, phenolic phenolic varnish epoxy resin, biphenyl diepoxy resin, and naphthol phenolic varnish epoxy resin. The sealing layer 50 and the thermosetting resin composition used to form the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0106] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When using a sealing film, a compression sealing molding machine, a vacuum lamination apparatus, or the like is used. For example, by using these apparatuses and coating the semiconductor component 40 with a sealing film that has been thermally melted at 40–180°C (or 60–150°C), 0.1–10 MPa (or 0.5–8 MPa), and for 0.5–10 minutes, the sealing layer 50 can be formed. The thickness of the sealing film is adjusted to be greater than or equal to the thickness of the processed semiconductor component 40. The thickness of the sealing film can be 50–2000 μm, 70–1500 μm, or 100–1000 μm.

[0107] After the sealing layer 50 is formed, such as Figure 4 As shown in (c), the sealing layer 50 and the cured second curable resin layer 16c can be divided into multiple parts, each including one semiconductor component 40.

[0108] (Separation process)

[0109] Figure 5 (a) and Figure 5 (b) is a schematic cross-sectional view illustrating one embodiment of a method for manufacturing a semiconductor device. In the separation process, light is irradiated from the support member side onto the temporary fixing laminate, thereby separating the semiconductor component from the support member.

[0110] like Figure 5As shown in (a), light A is irradiated from the support member 22 side onto the temporary fixing laminate 20c, thereby separating the semiconductor component 40 from the support member 22. Upon irradiation with light A, the metal foil 12 absorbs the light and instantly generates heat. This heat can cause, for example, melting of the cured first curable resin layer 14c and / or the cured second curable resin layer 16c, thermal stress between the support member 22 and the semiconductor component 40, and scattering of the metal foil 12. One or more of these phenomena become the primary cause of agglomeration peeling, interfacial peeling, etc., thereby allowing the semiconductor component 40 to be easily separated from the support member 22. To separate the semiconductor component 40 from the support member 22, a small amount of stress can be applied to the semiconductor component 40 under the irradiation of light A.

[0111] The light A in the separation process can be coherent light. Coherent light is an electromagnetic wave with high interferometry, high directivity, and high monochromaticity. Coherent light is synthesized by the mutual reinforcement of light of the same wavelength and phase, thus exhibiting a tendency for high intensity. Lasers are typically coherent light. Examples of lasers include YAG lasers, fiber lasers, semiconductor lasers, helium-neon lasers, argon lasers, and excimer lasers. The wavelength of the laser can be below 1300 nm. With wavelengths below 1300 nm, light absorption by the support component 22 is suppressed, and light absorption by the metal foil 12 becomes higher, thus enabling separation with lower light irradiation energy. Coherent light can be pulsed light.

[0112] The light A in the separation process can be incoherent light. Incoherent light is light that is not coordinated and is an electromagnetic wave with properties such as not producing interference fringes, low interferometry, and low directivity. Incoherent light tends to attenuate as its optical path length increases. Sunlight, fluorescent light, and other light sources are incoherent light. Incoherent light can also be referred to as light other than laser light. The irradiation area of ​​incoherent light is usually much larger than that of coherent light (i.e., laser light), thus reducing the number of irradiations. For example, multiple semiconductor components 40 can be separated with a single irradiation. Incoherent light can include infrared radiation. Incoherent light can be pulsed light.

[0113] There are no particular restrictions on the light source, but it can be a xenon lamp. A xenon lamp is a lamp that emits light by applying / discharging a light-emitting tube containing xenon gas. Xenon lamps repeatedly ionize, excite, and discharge, thus stably possessing a continuous wavelength from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps require a shorter start-up time, thus significantly reducing the time required for processing. Furthermore, while emitting light requires a high voltage, resulting in instantaneous high heat, xenon lamps are advantageous from the perspective of short cooling times and the ability to operate continuously.

[0114] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations. From the viewpoint of reducing damage to the semiconductor component 40, irradiation conditions can be set such that the semiconductor component 40 can be separated by a single irradiation.

[0115] Sometimes, a portion of the cured second curable resin layer 16c adheres as residue to the separated semiconductor component 40. For example... Figure 5 Remove the attached residue as shown in (b). The attached residue can be removed, for example, by cleaning with a solvent or by peeling. There are no particular limitations on the solvent, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These can be used alone or in combination of two or more. To remove the attached residue, the semiconductor component 40 can be immersed in a solvent or ultrasonically cleaned. The semiconductor component 40 can be heated at a low temperature below 100°C.

[0116] By using the methods illustrated above, a semiconductor element 60 having the processed semiconductor component 40 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to other semiconductor elements or a semiconductor element mounting substrate.

[0117] Example

[0118] The present disclosure will be further illustrated below with examples. However, the present disclosure is not limited to these examples.

[0119] (Example 1)

[0120] [Preparation of experimental laminates]

[0121] <Preparation of Curable Resin Films>

[0122] A 25% by mass thermoplastic resin solution was prepared by dissolving maleic anhydride-modified styrene-ethylene-butene-styrene block copolymer (product name: FG1901GT, Kraton Polymer Japan) as a thermoplastic resin in toluene. A 25% by mass thermoplastic resin solution was prepared by dissolving dicyclopentadiene-type epoxy resin (product name: HP-7200H, DIC Corporation) as a thermosetting resin in toluene. A 10% by mass antioxidant solution was prepared by dissolving a hindered phenol derivative (product name: AO-60, ADEKA CORPORATION) in toluene. A 10% by mass curing accelerator solution was prepared by dissolving an imidazole derivative (product name: 2PZ-CN, SHIKOKUCHEMICALS CORPORATION.) in cyclohexanone. Next, a thermoplastic resin solution containing 70 parts by mass of the above copolymer, a thermosetting resin solution containing 30 parts by mass of the above epoxy resin, an antioxidant solution containing 0.8 parts by mass of the above antioxidant, and a curing accelerator solution containing 2 parts by mass of the above curing accelerator are mixed to obtain a varnish with curable resin components.

[0123] Using a precision coating machine, the obtained curable resin component varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, DuPont Teijin Films, thickness: 38 μm). The coating was dried by heating at 100°C for 10 minutes, thus producing a curable resin film with a thickness of approximately 80 μm. This curable resin film was then used to form curable resin layers (a first curable resin layer and a second curable resin layer).

[0124] <Fabrication of Laminated Films for Temporary Fixation>

[0125] A curable resin film was deposited on both sides of an electrolytic copper foil (product name: F3-WS-12, Furukawa Electric Co., Ltd.) with a roughened surface and a thickness of 12 μm. The sides of the electrolytic copper foil and the curable resin film, opposite to the PET film, were then joined together. Next, lamination was performed using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) at a pressure of 0.5 MPa, a temperature of 100°C, and a pressing time of 60 seconds to obtain a laminated film for temporary fixation.

[0126] <Construction of Temporary Fixing Laminated Structures>

[0127] As a support component, a rectangular glass slide with dimensions of 20 mm × 20 mm (thickness: 1.1 mm) was prepared. A temporary fixing laminate of 20 mm × 20 mm was cut out on the prepared glass slide with the roughened surface (non-glossy side) of the copper foil facing the glass side. Then, lamination was performed using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) at a pressure of 0.5 MPa, a temperature of 100°C, and a pressing time of 60 seconds, thereby obtaining a temporary fixing laminate with a structure of support component / temporary fixing material layer (support component / first curable resin layer / metal foil / second curable resin layer).

[0128] <Preparation of Experimental Laminated Structures>

[0129] A semiconductor wafer (size: 20mm × 20mm, thickness: 150μm), serving as a semiconductor component, was disposed on the second curable resin layer in the temporary fixing material layer of the temporary fixing laminate. Then, lamination was performed using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) at a pressure of 0.5MPa, a temperature of 100°C, and a pressure time of 60 seconds. The first and second curable resin layers in the temporary fixing material layer were then cured by heating at 200°C for 1 hour, thereby obtaining the experimental laminate of Example 1, which has a semiconductor component temporarily fixed to a support member.

[0130] (Comparative Example 1)

[0131] [Preparation of experimental laminates]

[0132] <Fabrication of support components with metal layers>

[0133] A rectangular glass slide with dimensions of 20 mm × 20 mm (thickness: 1.1 mm) was prepared as a support component. A copper layer (thickness: 200 nm) was formed on the prepared glass slide by sputtering. In the sputtering process, the copper layer was formed by RF sputtering after pretreatment by reverse sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows.

[0134] (1) Reverse sputtering (pretreatment)

[0135] Ar flow rate: 1.2 × 10 -2 Pa·m 3 / s (70sccm)

[0136] • RF power: 300W

[0137] • Time: 300 seconds

[0138] (2) RF sputtering

[0139] Ar flow rate: 1.2 × 10 -2 Pa·m 3 / s (70sccm)

[0140] • RF power: 2000W

[0141] <Fabrication of Temporary Fixation Laminates and Experimental Laminates>

[0142] A 20mm × 20mm curable resin film was cut onto a copper layer formed by sputtering on a glass slide. Then, lamination was performed using a vacuum pressure laminator (V130, Nikko Materials Co., Ltd.) at a pressure of 0.5 MPa, a temperature of 100°C, and a pressure time of 60 seconds to obtain a temporary fixing laminate with a structure of support member / metal layer (copper layer) / curable resin layer. Next, a semiconductor wafer (size: 20mm × 20mm, thickness: 150μm) was placed on the curable resin layer, and the curable resin layer was cured under the same conditions as in Example 1 to obtain a test laminate of Comparative Example 1 with a semiconductor component temporarily fixed to the support member.

[0143] <Peeling Test>

[0144] For the test laminates of Example 1 and Comparative Example 1, the test laminates were irradiated with a xenon lamp under two conditions: a weak irradiation condition with an applied voltage of 640V, an irradiation distance of 5mm, one irradiation cycle, and an irradiation time of 1000μs; and a strong irradiation condition with an applied voltage of 670V, an irradiation distance of 5mm, one irradiation cycle, and an irradiation time of 1000μs. The separability of the temporarily fixed semiconductor wafer from the glass slide was evaluated. Regarding the xenon lamp, a NovaCentrix PulseForge 1300 (registered trademark) was used (wavelength range: 200nm–1500nm, irradiation energy per unit area: 8.4J / cm²). 2 (Predicted value, weak irradiation conditions), 9.6 J / cm 2(Predicted values, strong irradiation conditions) Regarding xenon lamp irradiation, it was performed from the support component (glass slide) side of the laminate. The irradiation distance was the distance between the light source and the stage where the glass slide was placed. Regarding the evaluation of the peelability test, the case where the semiconductor wafer could peel off naturally from the glass slide after xenon lamp irradiation without the application of external force was evaluated as "A", and the case where the semiconductor wafer would not peel off from the glass slide without the application of external force was evaluated as "B". In addition, regarding the test laminate of Example 1, it was evaluated as "A" under weak irradiation conditions, so the test under strong irradiation conditions was not performed. The results are shown in Table 1.

[0145] [Table 1]

[0146]

[0147] As shown in Table 1, compared with the test laminate of Comparative Example 1 which does not have a temporary fixing material layer with a specific structure, the test laminate of Example 1, which has a temporary fixing material layer with a specific structure (first curable resin layer / metal foil / second curable resin layer), exhibits excellent peelability (separation of the temporarily fixed semiconductor wafer from the glass slide) even under weak irradiation conditions (even with low light irradiation energy). From these results, it is confirmed that the temporary fixing laminate of this disclosure can form a temporary fixing material layer with excellent separation between the temporarily fixed semiconductor component and the support component (separation can be performed with lower light irradiation energy).

[0148] Symbol Explanation

[0149] 10 - Temporary fixing laminate; 10A, 10Ac - Temporary fixing material layers; 12 - Metal foil; 12a - First side; 12b - Second side; 14 - First curable resin layer; 14c - Cured first curable resin layer; 16 - Second curable resin layer; 16c - Cured second curable resin layer; 20, 20c - Temporary fixing laminate; 22 - Support component; 40 - Semiconductor component; 42 - Semiconductor substrate; 44 - Rewiring layer; 50 - Sealing layer; 60 - Semiconductor element.

Claims

1. A method for manufacturing a laminated film for temporary fixing, which is a method for manufacturing a laminated film for temporary fixing of semiconductor components and support components. The manufacturing method includes the following steps: a first curable resin layer is applied to one side of a single-layer metal foil and a second curable resin layer is applied to the other side of the metal foil to obtain a laminated film for temporary fixation.

2. The manufacturing method according to claim 1, wherein, The metal constituting the metal foil is at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

3. A laminated film for temporary fixing, used for temporarily fixing semiconductor components and support components. The temporary fixing laminated film sequentially comprises a first curable resin layer, a single-layer metal foil, and a second curable resin layer. The first curable resin layer is disposed adjacent to one side of the metal foil. The second curable resin layer is disposed adjacent to the other side of the metal foil.

4. The laminated membrane for temporary fixation according to claim 3, wherein, The metal constituting the metal foil is at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum.

5. A temporary fixing laminate comprising a support member and a temporary fixing material layer disposed on the support member, The temporary fixing material layer, starting from the support component, sequentially comprises a first curable resin layer, a single-layer metal foil, and a second curable resin layer. The first curable resin layer is disposed adjacent to one side of the metal foil. The second curable resin layer is disposed adjacent to the other side of the metal foil.

6. A method for manufacturing a semiconductor device, comprising: The process of preparing the temporary fixing laminate as described in claim 5; The process of temporarily fixing a semiconductor component to the support component via the temporary fixing material layer; The process of processing the semiconductor component temporarily fixed to the support member; and The process of separating the semiconductor component from the support component by irradiating the temporary fixing laminate with light from the support component side.

7. The manufacturing method according to claim 6, wherein, The light is incoherent.

8. The manufacturing method according to claim 7, wherein, The incoherent light is light that contains at least infrared light.

9. The manufacturing method according to any one of claims 6 to 8, wherein, The light source is a xenon lamp.

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