用于沟槽的光学测量的目标
By introducing tungsten through-holes into the optical metrology target, light can reach the bottom of the WL slit in the 3D NAND device, solving the problem of measuring high aspect ratio trenches in the prior art and achieving the effect of non-destructive optical measurement.
CN115668471BActive Publication Date: 2026-07-17ONTO INNOVATION INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ONTO INNOVATION INC
- Filing Date
- 2021-04-16
- Publication Date
- 2026-07-17
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Figure CN115668471B_ABST
Abstract
一种计量目标被设计用于测量待测装置中的沟槽的底部处的特征，诸如三维(3D)NAND中的字线中的钨凹陷部竖直轮廓。该计量目标遵循该待测装置的设计规则，并且包括层叠堆叠，该层叠堆叠具有多个层叠堆叠对以及延伸穿过这些层叠堆叠对的沟槽，每个层叠堆叠对包括导体层(诸如钨)和绝缘体层(诸如二氧化硅)。该计量目标包括通孔，该通孔延伸穿过该层叠堆叠对，并且被定位成与该沟槽相距一定横向距离以经由等离子体共振促进光到达该沟槽的底部，以用于测量该沟槽的特性，诸如字线狭缝的底部处的钨凹陷部。
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