Micro- and nano-fin led electrode assembly and method of manufacturing the same, and light source including the same

Abstract

The present invention relates to a manufacturing method of a micro-nano FIN LED electrode assembly, a micro-nano FIN LED electrode assembly manufactured according to the method, and a light source including the electrode assembly, the manufacturing method of the micro-nano FIN LED electrode assembly including: on a lower electrode line including a plurality of lower electrodes separated in a horizontal direction by a predetermined interval, feeding a solution including a plurality of micro-nano FIN LED elements, the micro-nano FIN LED element being a pillar type element having a planar surface of a nanometer or micrometer size in length and width and a thickness perpendicular to the planar surface smaller than the length, sequentially stacked in a thickness direction with a first conductive semiconductor layer, a photoactive layer, a second conductive semiconductor layer, and a polarization induction layer; applying an assembly voltage to the lower electrode line in a manner that the first conductive semiconductor layer or the polarization induction layer of the micro-nano FIN LED element in the solution is in contact with at least two adjacent lower electrodes, allowing the micro-nano FIN LED elements to self-align; and forming an upper electrode line on the self-aligned plurality of micro-nano FIN LED elements.

Description

Technical Field

[0001] This invention relates to LED electrode assemblies, and more specifically to micro-nano fin LED electrode assemblies, methods for manufacturing the same, and light sources. Background Technology

[0002] Micro LEDs and Nano LEDs possess excellent color sensitivity and high efficiency, and are relatively environmentally friendly materials, making them core components in various light sources and displays. In light of this market situation, research has been ongoing in recent years on novel nanopillar LED structures or nanowire LEDs with swells formed through new manufacturing processes. Furthermore, to achieve high efficiency and high safety in the protective film coating the nanopillars, research is also underway on protective film materials or ligand materials that facilitate subsequent processes.

[0003] Based on this research in the field of materials, TV displays utilizing red, green, and blue Micro-LEDs have recently been commercialized. Micro-LED displays and various light sources possess advantages such as high performance, theoretical lifespan, and very long and high efficiency. However, the need to individually deploy each Micro-LED on miniaturized electrodes within a limited area has led to the use of pick-and-place technology to create electrode assemblies. Considering the high cost, high defect rate, and low production efficiency, and limitations in process technology, it remains difficult to manufacture truly high-resolution commercial displays or light sources of various sizes, shapes, and brightnesses, from smartphones to TVs. Furthermore, for Nano-LEDs, which are even smaller than Micro-LEDs, it is even more difficult to individually deploy each one on an electrode using the pick-and-place technology employed by Micro-LEDs.

[0004] To overcome these difficulties, the inventors of this application disclosed in Korean Patent Publication No. 10-1490758 an ultra-miniature LED electrode assembly manufactured using the following method: after immersing a solution mixed with nano-pillar LEDs onto the electrodes, an electric field is formed between two dissimilar electrodes, causing multiple nano-pillar LED elements to self-align on the electrodes. However, the nano-pillar LEDs used have a small light-emitting area and poor efficiency, thus presenting the following problems: to achieve the desired efficiency, a large number of LEDs need to be installed, and the nano-pillar LEDs themselves have a high probability of defects.

[0005] Specifically, it is known that nanopillar-shaped LED devices are manufactured using the following methods: a top-down method is used to fabricate LED wafers by combining nanopatterning processes with dry / wet etching, or by directly growing them on a substrate using a bottom-up method. In such nanopillar-shaped LEDs, the long axis of the LED is aligned with the stacking direction, i.e., the stacking direction of each layer in the p-GaN / InGaN multiple quantum well (MQW) / n-GaN stacked structure. Therefore, the light-emitting area is narrow. Due to the narrow light-emitting area, surface defects have a significant impact on efficiency reduction, making it difficult to optimize the electron-hole recombination rate. Consequently, the luminous efficiency is significantly lower than that of the original wafer.

[0006] Therefore, there is an urgent need to develop an LED electrode assembly that utilizes novel LED components, which can be easily arranged using an electric field, have a large light-emitting area, prevent or minimize efficiency degradation caused by surface defects, and optimize the recombination rate of electrons and holes. Summary of the Invention

[0007] Technical issues

[0008] The present invention was made to solve the above-mentioned problems. Its purpose is to provide an electrode assembly utilizing micro-nano FINLED elements, a method for manufacturing the same, and a light source containing the assembly, which can improve the light-emitting area and improve efficiency and brightness.

[0009] Furthermore, another objective of the present invention is to provide an electrode assembly utilizing micro / nano FIN LED elements, a method for manufacturing the same, and a light source containing the assembly, which can increase the light-emitting area, reduce the thickness of the photoactive layer, prevent efficiency degradation caused by surface defects, and stably emit light with high brightness.

[0010] Furthermore, another objective of the present invention is to provide an electrode assembly utilizing micro / nano FIN LED elements, a method for manufacturing the same, and a light source comprising the assembly, which can prevent a decrease in electron-hole recombination efficiency due to an imbalance in electron and hole velocities.

[0011] Furthermore, another object of the present invention is to provide an electrode assembly utilizing micro / nano FIN LED elements, a method for manufacturing the same, and a light source including the assembly, which is well-suited for enabling LED elements to self-align on the electrodes via an electric field without concerns about electrical short circuits, and improves the ease of electrode arrangement design and electrode configuration.

[0012] Technical means

[0013] To address the aforementioned technical challenges, this invention provides a method for manufacturing micro / nano FIN LED electrode components, characterized by comprising: step (1), immersing a solution containing multiple micro / nano FIN LED elements on a lower electrode line comprising multiple lower electrodes separated horizontally at predetermined intervals, wherein the micro / nano FIN LED elements are cylindrical elements having a plane with a length and width of nanometers or micrometers and a thickness smaller than the length perpendicular to the plane, and sequentially depositing a first conductive semiconductor layer, a photoactive layer, a second conductive semiconductor layer, and a polarization induction layer along the thickness direction; step (2), applying an assembly voltage to the lower electrode line in such a way that the first conductive semiconductor layer or polarization induction layer of the micro / nano FIN LED elements in the solution contacts at least two adjacent lower electrodes, thereby causing the micro / nano FIN LED elements to self-align; and step (3), forming an upper electrode line on the self-aligned multiple micro / nano FIN LED elements.

[0014] According to one embodiment of the present invention, the predetermined interval is smaller than the length of the micro / nano FIN LED element.

[0015] Furthermore, between steps (2) and (3), the method further includes: step (4), forming a conductive metal layer that connects the at least two lower electrodes to the sides of the first conductive semiconductor layer or polarization-inducing layer of each micro / nano FIN LED element that is in contact with at least two lower electrodes; and step (5), forming an insulating layer on the lower electrode lines in a manner that does not cover the upper surfaces of the self-aligned plurality of micro / nano FIN LED elements.

[0016] Moreover, the length of the micro-nano FIN LED element is 1000-10000nm and the thickness is 100-3000nm.

[0017] Moreover, the width of the micro / nano FIN LED element is greater than or the same as its thickness.

[0018] Moreover, the length-to-thickness ratio of the micro-nano FIN LED element is 3:1 or higher.

[0019] Furthermore, the micro / nano FIN LED element may also include a protective coating formed on the side of the element in such a way that the exposed surface does not cover the photoactive layer.

[0020] Furthermore, the polarization induction layer is composed of a first polarization induction layer and a second polarization induction layer arranged adjacent to each other along the length direction of the element, and the electrical polarities of the first polarization induction layer and the second polarization induction layer are different from each other. In this case, as an example, the first polarization induction layer is ITO, and the second polarization induction layer is a metal or a semiconductor.

[0021] Furthermore, the present invention provides a micro / nano FIN LED electrode assembly, characterized in that it comprises: a lower electrode line including a plurality of lower electrodes separated horizontally at predetermined intervals; a plurality of micro / nano FIN LED elements, which are cylindrical elements having a plane with a length and width of nanometers or micrometers and a thickness smaller than the length perpendicular to the plane, wherein a first conductive semiconductor layer, a photoactive layer, a second conductive semiconductor layer, and a polarization induction layer are sequentially deposited along the thickness direction, the plurality of micro / nano FIN LED elements being arranged such that the first conductive semiconductor layer or the polarization induction layer is in contact with at least two adjacent lower electrodes; and an upper electrode line disposed on the plurality of micro / nano FIN LED elements.

[0022] According to one embodiment of the present invention, either the first conductive semiconductor layer or the second conductive semiconductor layer comprises a p-type GaN semiconductor layer, and the other comprises an n-type GaN semiconductor layer. The thickness of the p-type GaN semiconductor layer is 10–350 nm, the thickness of the n-type GaN semiconductor layer is 100–3000 nm, and the thickness of the photoactive layer is 30–200 nm.

[0023] Furthermore, the lower surface of the first conductive semiconductor layer of the micro / nano FIN LED element has a protrusion with a predetermined width and thickness formed along the length direction of the element.

[0024] Furthermore, the width of the protrusion has a length that is less than 50% of the width of the micro / nano FIN LED element.

[0025] Moreover, the light-emitting area of ​​the micro-nano FIN LED element is more than twice the cross-sectional area of ​​the micro-nano FIN LED element.

[0026] Moreover, the micro / nano FIN LED electrode assembly has a unit area of ​​100x100μm. 2 It contains 2 to 100,000 micro-nano FIN LED elements.

[0027] The terms used in this invention are defined below.

[0028] In the description of the configuration example based on the present invention, when referring to the layers, regions, and patterns formed on the substrate, the terms "on", "upper", "under", "lower", and "lower" all include the meanings of "directly" and "indirectly".

[0029] Invention Effects

[0030] The micro / nano FIN LED electrode assembly based on this invention, compared to electrode assemblies utilizing existing cylindrical LED elements, offers the advantage of increasing the light-emitting area of ​​the element, thereby achieving high brightness and high luminous efficiency. Furthermore, it increases the light-emitting area of ​​the element while significantly reducing the area of ​​the exposed photoactive layer on the surface, thus preventing or minimizing performance degradation caused by surface defects and enabling the construction of a high-quality electrode assembly. Consequently, since the decrease in electron-hole recombination efficiency due to imbalances in electron and hole velocities and the resulting decrease in luminous efficiency are minimized, the LED element used is highly suitable for methods that allow the element to self-align on the electrode using an electric field, making it easier to construct electrode assemblies and enabling wide application in various lighting, light sources, displays, etc. Attached Figure Description

[0031] Figures 1 to 2 This is a diagram of a micro / nano FIN LED electrode assembly based on an embodiment of the present invention. Figure 1 This is a top view of the micro / nano FIN LED electrode assembly. Figure 2 Based on Figure 1 A cross-sectional schematic diagram of the XX′ boundary line.

[0032] Figure 3 This is a cross-sectional schematic diagram of a micro / nano FIN LED electrode assembly based on another embodiment of the present invention.

[0033] Figure 4a and 4b These are schematic diagrams of a first columnar element having a first conductive semiconductor layer, a photoactive layer, and a second conductive semiconductor layer laminated along the thickness direction, and a second columnar element having a first conductive semiconductor layer, a photoactive layer, and a second conductive semiconductor layer laminated along the length direction.

[0034] Figures 5 to 8 This is a diagram of a micro / nano FIN LED element included in an embodiment of the present invention. Figure 5 It's a 3D image. Figure 6 Based on Figure 5 A cross-sectional view of the XX′ boundary line. Figure 7 Based on Figure 5 A cross-sectional view of the YY′ boundary line, and Figure 8 Based on Figure 5 A schematic diagram of the manufacturing process of micro / nano FIN LED elements.

[0035] Figures 9 to 12 This is a diagram of a micro / nano FIN LED element included in an embodiment of the present invention. Figure 9 It's a 3D image. Figure 10 Based on Figure 9 A cross-sectional view of the XX′ boundary line. Figure 11 Based on Figure 9 A cross-sectional view of the YY′ boundary line, and Figure 12 It is for those based on Figure 9 A schematic diagram of the manufacturing process of micro / nano FIN LED elements.

[0036] Figure 13 This is a schematic diagram of a light source based on an embodiment of the present invention.

[0037] Figure 14a and Figure 14b This is a schematic diagram of a light source based on several embodiments of the present invention.

[0038] Figure 15 and Figure 16 These are schematic diagrams of a medical device and a beauty device based on an embodiment of the present invention. Detailed Implementation

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can readily implement them. The present invention can be implemented in many different forms and is not limited to the embodiments described herein.

[0040] Reference Figure 1 and Figure 2 As described below, a micro / nano FIN LED electrode assembly 1000 based on an embodiment of the present invention is configured to include: a lower electrode line 200 comprising a plurality of electrodes 211, 212, 213, 214 separated in a horizontal direction at predetermined intervals; a plurality of micro / nano FIN LED elements 101, 102, 103 disposed on the lower electrode line 200; and an upper electrode line 300 disposed in such a manner as to contact the upper part of the micro / nano FIN LED elements 101, 102, 103.

[0041] First, the electrode lines 200 and 300 used to enable the micro / nano FIN LED elements 101, 102, and 103 to self-align and emit light will be explained.

[0042] The micro / nano FIN LED electrode assembly 1000 includes an upper electrode line 300 and a lower electrode line 200, which are arranged opposite each other at the top and bottom, separated by micro / nano FIN LED elements 101, 102, and 103. Since the upper electrode line 300 and lower electrode line 200 are not arranged horizontally, the complex electrode lines of existing electric field-induced electrode assemblies, which arrange two types of electrodes with ultra-small thicknesses and widths at micrometer or nanometer intervals along a horizontal direction within a limited area of ​​a plane, are avoided. This simplifies the electrode design and makes it easier to construct.

[0043] Specifically, existing electrode assemblies that achieve element self-alignment through electric field induction also use multiple horizontally separated electrodes as assembly electrodes. A cylindrical ultra-small LED element is mounted on these assembly electrodes, and the same electrode, i.e., the assembly electrode, is directly used as the driving electrode. On the other hand, in an embodiment of the present invention, the lower electrode line 200 functions as an assembly electrode, but only one side of the first conductive semiconductor layer or the second conductive semiconductor layer contacts the lower electrode line 200. Therefore, the lower electrode line 200 alone cannot cause the micro / nano FIN LED elements 101, 102, and 103 to emit light. This differs from existing electrode assemblies that achieve electric field induction. This difference significantly alters the freedom and ease of electrode design.

[0044] In other words, the requirement is to install the maximum number of cylindrical ultra-small LED elements within a defined plane while using the assembly electrode and driving electrode as the same electrode. Simultaneously, it is necessary to construct electrode lines with micrometer-nanometer spacing to apply different voltages, making the design and construction of the electrode structure challenging. However, in the present invention, the lower electrode lines 200 are applied with the same type of power supply during driving (for example, (+) or (-) power supply), thus reducing the likelihood of electrical short circuits between the lower electrodes 211, 212, 213, 214, 215, and 216 within the lower electrode lines 200. Furthermore, conventionally, each cylindrical ultra-small LED element, corresponding to semiconductor layers with different conductivity, requires one-to-one contact between its two ends with adjacent electrodes to achieve light emission without short circuits. Therefore, if each cylindrical ultra-small LED element involves a configuration of three or four adjacent electrodes, the photoactive layer of the cylindrical ultra-small LED element will inevitably only contact the electrodes, leading to short circuits. This presents difficulties in designing electrode widths, spacing, etc., which must take these factors into account. However, in the micro-nano FIN LED elements 101, 102, and 103 included in this invention, one side of the first conductive semiconductor layer or one side of the second conductive semiconductor layer is in contact with the lower electrode line. Therefore, even if multiple adjacent lower electrodes 211, 212, 213, 214, 215, and 216 are configured, no electrical short circuit will occur, thus providing the advantage of making it easier to design the lower electrode line 200.

[0045] Furthermore, the upper electrode circuit 300 is arranged to be able to interact with, for example... Figure 1 and Figure 2 The upper surfaces of the micro / nano FIN LED elements 101, 102, and 103 in the configuration shown have electrical contacts, thus offering the advantage of ease in electrode design and construction. In particular, Figure 1 The upper electrode line 300 is shown to be composed of a first upper electrode 301 and a second upper electrode 302. However, the upper electrode can also be composed of only one electrode that contacts the upper surface of all the micro-nano FIN LED elements. Therefore, compared with the prior art, it has the advantage of being able to construct the electrode line very simply.

[0046] The aforementioned lower electrode line 200 is an assembly electrode used to self-align the micro-nano FIN LED elements 101, 102, and 103 by contacting the upper or lower surface of the micro-nano FIN LED elements 101, 102, and 103 in the thickness direction. It can also function as one of the driving electrodes provided together with the upper electrode line 300 described later to make the micro-nano FIN LED elements 101, 102, and 103 emit light.

[0047] Furthermore, the aforementioned lower electrode line 200 is configured to include a plurality of lower electrodes 211, 212, 213, 214, 215, and 216 separated horizontally at predetermined intervals. The number of the aforementioned lower electrodes 211, 212, 213, 214, 215, and 216 and the interval between the electrodes can be appropriately set according to considerations such as their function as assembly electrodes, the length of the components, and the size of the electrode assembly.

[0048] Furthermore, the multiple lower electrodes 211, 212, 213, 214, 215, and 216 included in the lower electrode line 200 can be arranged separately along the horizontal direction. There are no restrictions on the specific electrode arrangement. For example, it can be a structure in which multiple electrodes are arranged neatly along one direction at predetermined intervals.

[0049] Furthermore, the spacing between adjacent lower electrodes 211, 212, 213, 214, 215, and 216 can be smaller than the length of the micro / nano FIN LED elements 101, 102, and 103. If the spacing between two adjacent electrodes is larger than or the same as the length of the micro / nano FIN LED element, the micro / nano FIN LED element may self-align by being embedded between the two adjacent electrodes. In this case, it may cause contact between the electrode side and the photoactive layer of the micro / nano FIN LED element exposed on the side, resulting in an electrical short circuit, which is not suitable.

[0050] On the other hand, the lower electrode line 200 can be directly disposed on the supports 1100, 1100', 1100" (described later), or it can be disposed on another substrate 401, which is arranged to be placed on the supports 1100, 1100', 1100" . The substrate 401 can function as a support for the lower electrode line 200, the upper electrode line 300, and the micro / nano FIN LED elements 101, 102, 103 between the lower electrode line 200 and the upper electrode line 300. The substrate 401 can be any material selected from the group consisting of glass, plastic, ceramic, and metal, but is not limited thereto. Moreover, in order to minimize the loss of emitted light, the substrate 401 is preferably made of a transparent material. Furthermore, the substrate 401 is preferably made of a flexible material. Moreover, the size and thickness of the substrate 401 can be appropriately changed according to the size of the micro / nano FIN LED electrode assembly and the specific design of the lower electrode line 200.

[0051] Next, when the upper electrode line 300 is designed to make upper electrical contact with the plurality of micro / nano FIN LED elements 101, 102, 103 mounted on the lower electrode line 200, there are no limitations on the number, arrangement, shape, etc. However, as Figure 1 As shown, if the lower electrode lines 200 are arranged neatly in one direction, the upper electrode lines 300 can be arranged in a way that is perpendicular to the aforementioned direction. Such an electrode configuration is an electrode configuration widely used in existing displays and has the advantage of being able to use existing electrode configurations and drive control technologies in the display field as is.

[0052] on the other hand, Figure 1 Only the first upper electrode 301 and the second upper electrode 302 are shown, and the upper electrode line 300 containing them only covers a portion of the element, which is omitted for ease of explanation. In fact, it also includes an upper electrode (not shown) disposed on the upper part of the micro / nano FIN LED element.

[0053] The lower electrode line 200 and upper electrode line 300 described above have the same material, shape, width, and thickness as electrodes commonly used in LED electrode assemblies, and are manufactured using known methods, which are not limited in this invention. As an example, the electrodes may be made of aluminum, chromium, gold, silver, copper, graphene, ITO, or alloys thereof, with a width of 2 to 50 μm and a thickness of 0.1 to 100 μm, which can be appropriately modified to take into account the desired size of the LED electrode assembly.

[0054] Next, the micro / nano FIN LED elements 101, 102, and 103 arranged between the lower electrode line 200 and the upper electrode line 300 will be described.

[0055] According to an embodiment of the present invention, micro / nano FIN LED elements 101, 102, and 103 include a first conductive semiconductor layer 10, a photoactive layer 20, and a second conductive semiconductor layer 30. The stacking direction of these layers is the thickness direction, and they are columnar LED elements with a length greater than their thickness.

[0056] Reference Figures 5 to 7 and Figures 9 to 11 Specifically, based on an embodiment of the present invention, the micro / nano FIN LED elements 108 and 109 are based on mutually perpendicular X, Y, and Z axes. When the X-axis direction is set as the length, the Y-axis direction is set as the width, and the Z-axis direction is set as the thickness, the length is the major axis and the thickness is the minor axis. The length is greater than the thickness. It is an element in which a first conductive semiconductor layer 10, a photoactive layer 20, a second conductive semiconductor layer 30, and an electrode layer 40 or a polarization induction layer 40' are sequentially deposited along the thickness direction.

[0057] More specifically, the micro / nano FIN LED elements 108 and 109 have a predetermined shape in an XY plane composed of length and width, with the thickness direction perpendicular to the plane, and the layers of the LED element are stacked along the thickness direction. This structure of the micro / nano FIN LED elements 108 and 109 has the advantage that even if the photoactive layer 20 exposed on the side is thin, a wider light-emitting area can be ensured by the plane composed of length and width. Furthermore, as a result, the light-emitting area of ​​the micro / nano FIN LED elements 108 and 109 according to an embodiment of the present invention is more than twice the area of ​​the longitudinal section of the micro / nano FIN LED element. Here, the longitudinal section refers to a section parallel to the X-axis direction, which is the length direction; in the case of an element with a fixed width, this can be the aforementioned XY plane.

[0058] Specifically, refer to Figure 4a and Figure 4b To explain, Figure 4a The first columnar element 1 shown and Figure 4b The second columnar element 1' shown is a columnar element with the same length l and thickness m, and the same thickness h of the photoactive layer, having a structure in which a first conductive semiconductor layer 2, a photoactive layer 3, and a second conductive semiconductor layer 4 are deposited. However, the first columnar element 1 has the first conductive semiconductor layer 2, the photoactive layer 3, and the second conductive semiconductor layer 4 deposited in the thickness direction, while the second columnar element 1' has each layer deposited in the length direction, thus differing in structure.

[0059] These two elements 1 and 1' have significant differences in their light-emitting areas. For example, when the length l is set to 4000 nm, the thickness m to 600 nm, and the thickness h of the photoactive layer 3 to 100 nm, the ratio of the surface area of ​​the photoactive layer 3 of the first columnar element 1 to the surface area of ​​the photoactive layer 3 of the second columnar element 1' is 6.42 μm. 2 0.6597μm 2The first columnar element 1, as a micro / nano FIN LED element, has a light-emitting area 9.84 times larger. Furthermore, while the proportion of the surface area of ​​the photoactive layer 3 exposed to the outside in the entire light-emitting area of ​​the photoactive layer is similar for the first columnar element 1 and the second columnar element 1', the absolute value of the unexposed surface area of ​​the increased photoactive layer 3 is much larger, thus reducing the impact on excitons on the exposed surface area. Therefore, the first columnar element 1, as a micro / nano FIN LED element, has a much smaller impact on excitons due to surface defects compared to the second columnar element 1', which is a horizontally arranged columnar element. In terms of luminous efficiency and brightness, the first columnar element 1, as a micro / nano FIN LED element, is significantly superior to the second columnar element 1', which is a horizontally arranged columnar element. Furthermore, in the case of the second pillar element 1', it is formed by etching a wafer in which a conductive semiconductor layer and a photoactive layer are deposited along the thickness direction. As a result, the length of the relatively long element corresponds to the thickness of the wafer. In order to increase the length of the element, it is inevitable to increase the etching depth. However, the greater the etching depth, the higher the possibility of defects on the element surface. As a result, although the area of ​​the exposed photoactive layer is smaller in the second pillar element 1' compared to the first pillar element 1, the possibility of surface defects is greater. Considering the decrease in luminous efficiency caused by the increased possibility of surface defects, the first pillar element 1 is significantly superior in terms of luminous efficiency and brightness.

[0060] Furthermore, the first cylindrical element 1 has a shorter travel distance for holes injected into one of the first conductive semiconductor layer 2 and the second conductive semiconductor layer 4 compared to electrons injected into the other. This reduces the probability of electrons and / or holes being trapped due to defects in the wall surface during their movement, minimizing light emission loss and thus minimizing light emission loss caused by uneven electron-hole velocities. Moreover, in the case of the second cylindrical element 1', due to the strong light path variation caused by the cylindrical structure, the light path generated by electrons and holes resonates along the length direction, resulting in light emission at both ends of the length direction. When the element is laid flat, the strong side light emission profile leads to poor front light emission efficiency. On the other hand, in the case of the first cylindrical element 1, since light emission occurs on both the upper and lower surfaces, it has the advantage of achieving excellent front light emission efficiency.

[0061] In one embodiment of the present invention, the micro / nano FIN LED elements 108 and 109 are identical to the first columnar element 1 described above, with conductive semiconductor layers 10 and 30 and a photoactive layer 20 laminated along the thickness direction, configured such that the length is greater than the thickness, thus having a further increased light-emitting area. Furthermore, even if the area of ​​the exposed photoactive layer 20 increases somewhat, since it is also a columnar shape with a thickness smaller than its length, the etching depth is shallower, reducing the possibility of defects occurring on the exposed surface of the photoactive layer 20, which helps to prevent or minimize the reduction in luminous efficiency caused by such defects.

[0062] The above plane in Figure 5 The shape is shown as a right-angled quadrilateral, but it is not limited to this. It can be any shape, from ordinary quadrilaterals such as equilateral quadrilaterals, parallelograms, and trapezoids to ellipses, etc., without restriction.

[0063] Furthermore, the length and width of the micro / nano FIN LED elements 108 and 109 according to an embodiment of the present invention have a size of micrometers or nanometers. For example, the length of the micro / nano FIN LED elements 108 and 109 can be 1000 to 10000 nm, and the width can be 250 to 1500 nm. The thickness can be 100 to 3000 nm. The aforementioned length and width vary depending on the shape of the plane. For example, when the plane is an equilateral quadrilateral or a parallelogram, one of the two diagonals can be the length and the other the width. In the case of a trapezoid, the longer of the height, top side, and bottom side is the length, and the shorter side perpendicular to the longer side is the width. Alternatively, when the shape of the plane is an ellipse, the major axis of the ellipse is the length, and the minor axis is the width.

[0064] At this point, the length-to-thickness ratio of the micro / nano FIN LED elements 108 and 109 is 3:1 or more, preferably 6:1 or more, which provides the advantage of easier self-alignment on the lower electrode line 200 via an electric field, as described later. If the length is so small that the length-to-thickness ratio of the micro / nano FIN LED elements 108 and 109 is less than 3:1, it is difficult to self-align the micro / nano FIN LED elements on the lower electrode via an electric field, and the elements may not be fixed on the lower electrode, potentially causing electrical contact short circuits due to process defects. However, the length-to-thickness ratio can be 15:1 or less, which is beneficial for achieving the objectives of the present invention, such as optimizing the torque for self-alignment via an electric field.

[0065] Furthermore, the width of the aforementioned micro / nano FIN LED elements 108 and 109 can be greater than or equal to their thickness. Therefore, when the micro / nano FIN LED elements 108 and 109 are arranged on at least two adjacent lower electrodes using an electric field, they can be prevented from lying sideways or minimized. If the micro / nano FIN LED elements are arranged sideways, even if one end and the other end in the longitudinal direction are respectively in contact with at least two separate lower electrodes, a short circuit may occur due to the photoactive layer exposed on the side of the element contacting the lower electrodes, potentially leading to no light emission.

[0066] Moreover, the aforementioned micro-nano FIN LED elements 108 and 109 can be elements with different sizes at both ends in the length direction. For example, they can be cylindrical elements with four corner planes of an equilateral trapezoid whose height is larger than the top and bottom sides. As a result of the length difference between the top and bottom sides, the positive and negative charges that may accumulate at both ends in the length direction of the element may be different, thus having the advantage of being easier to self-align by an electric field.

[0067] Furthermore, on the lower surface of the first conductive semiconductor layer 10 of the aforementioned micro / nano FIN LED elements 108 and 109, a protrusion 11 with a predetermined width and thickness can be formed along the length direction of the element. The protrusion 11 will be explained in more detail later in the description of the manufacturing method. After etching the wafer along the thickness direction, in order to remove the etched LED components from the wafer, etching is performed horizontally from both sides of the lower end of the etched LED portion toward the inner side, which is the central portion. As a result, the protrusion 11 can be generated. The protrusion 11 helps to improve the front-side light emission extraction function of the micro / nano FIN LED elements 108 and 109. Moreover, when the micro / nano FIN LED elements 108 and 109 are self-aligned on the lower electrode line 200, the protrusion 11 helps to control the arrangement so that the opposite side of the element with the protrusion 11 is located on the lower electrode line 200. Furthermore, after the opposite side is located on the lower electrode line 200, in order to make the element emit light, an upper electrode line 300 can be formed on one side of the element with the protrusion 11. The protrusion 11 increases the contact area with the formed upper electrode line 300, thereby improving the mechanical bonding force between the upper electrode line 300 and the micro / nano FIN LED elements 108 and 109.

[0068] At this point, the width of the protrusion 11 is less than 50% of the width of the micro / nano FIN LED elements 108 and 109, more preferably less than 30%, thereby making it easier to separate the micro / nano FIN LED element portion etched on the LED wafer. If the protrusion is formed to exceed 50% of the width of the micro / nano FIN LED elements 108 and 109, it may be difficult to remove the etched micro / nano FIN LED element portion from the LED wafer. Moreover, breakage or separation may occur in other parts that are not desired, leading to a decrease in mass production and / or quality, and may also cause a decrease in the length and quality uniformity of the generated multiple micro / nano FIN LED elements. On the other hand, the width of the protrusion 11 can be formed to be more than 10% of the width of the micro / nano FIN LED elements 108 and 109. If the width of the protrusion is less than 10% of the width of the micro / nano FIN LED elements 108 and 109, although it is easy to separate from the LED wafer, during the side etching described later (see Figure 8 (g) / Figure 8 (i) and Figure 12 (h) / Figure 12 (i) Over-etching may occur, causing a portion of the first conductive semiconductor layer 10 that should not be etched to be etched as well, potentially preventing the protrusion 11 from achieving its intended effect. Furthermore, separation may occur due to the wet etching solution, leading to the need for cleaning after separating the micro / nano FIN LED elements dispersed in the highly alkaline and hazardous etching solution. On the other hand, the thickness of the protrusion 11 is approximately 10-30% of the thickness of the first conductive semiconductor layer, allowing the first conductive semiconductor layer to be formed to the desired thickness and quality, thus further facilitating the achievement of the effects based on the protrusion 11. Here, the thickness of the first conductive semiconductor layer 10 refers to the thickness based on the lower surface of the first conductive semiconductor layer where the protrusion is not formed.

[0069] As a specific example, the width of the protrusion 11 is 50-300 nm and the thickness is 50-400 nm.

[0070] The following describes the layers contained in the micro / nano FIN LED elements 108 and 109.

[0071] The micro / nano FIN LED elements 108 and 109 include a first conductive semiconductor layer 10 and a second conductive semiconductor layer 30. The conductive semiconductor layer used can be the same as that commonly used in LED elements used in lighting and displays, and there are no particular limitations. According to a preferred embodiment of the present invention, either the first conductive semiconductor layer 10 or the second conductive semiconductor layer 30 includes at least one n-type semiconductor layer, and the other conductive semiconductor layer includes at least one p-type semiconductor layer.

[0072] In the case where the first conductive semiconductor layer 10 includes an n-type semiconductor layer, the n-type semiconductor layer can be derived from having an In... x Al y Ga 1-x-y One or more of the following semiconductor materials are selected from combinations of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1): InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., and can be doped with a first conductive dopant (e.g., Si, Ge, Sn, etc.). According to a preferred embodiment of the present invention, the thickness of the first conductive semiconductor layer 10 can be 1 to 3 μm, but is not limited thereto.

[0073] When the second conductive semiconductor layer 30 includes a p-type semiconductor layer, the p-type semiconductor layer can be derived from the In... x Al y Ga 1-x-y One or more of the following semiconductor materials, selected from combinations of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), such as InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, may be doped with a second conductive dopant (e.g., Mg). According to a preferred embodiment of the present invention, the thickness of the second conductive semiconductor layer 30 may be 0.01 to 0.30 μm, but is not limited thereto.

[0074] According to an embodiment of the present invention, either the first conductive semiconductor layer 10 or the second conductive semiconductor layer 30 includes a p-type GaN semiconductor layer, and the other includes an n-type GaN semiconductor layer. The thickness of the p-type GaN semiconductor layer is 10–350 nm, and the thickness of the n-type GaN semiconductor layer is 1000–3000 nm. Therefore, the migration distance of holes injected into the p-type GaN semiconductor layer and electrons injected into the n-type GaN semiconductor layer is as follows: Figure 4b The device shown is shorter than a cylindrical element with semiconductor and photoactive layers stacked along its length. This reduces the probability of electrons and / or holes being trapped due to defects in the wall during movement, thus minimizing light emission loss and helping to minimize light emission loss caused by electron-hole velocity imbalance.

[0075] Next, the photoactive layer 20 is formed on top of the first conductive semiconductor layer 10, and can be formed in a single or multiple quantum well structure. The photoactive layer 20 can be a photoactive layer commonly found in LED elements used in lighting, displays, etc., and is not particularly limited. A cladding layer (not shown) doped with conductive dopants can be formed above and / or below the photoactive layer 20. This cladding layer can be composed of an AlGaN layer or an InAlGaN layer. Alternatively, materials such as AlGaN and AlInGaN can be used in the photoactive layer 20. When an electric field is applied to the element, electrons and holes moving from the conductive semiconductor layers located above and below the photoactive layer to the photoactive layer recombine in the photoactive layer, thereby emitting light. According to a preferred embodiment of the present invention, the thickness of the photoactive layer 20 is 30 to 300 nm, but is not limited thereto.

[0076] Next, on the second conductive semiconductor layer 30 described above, as Figures 5 to 7 As shown, an electrode layer 40 can be formed, or, as... Figures 9 to 11 As shown, a polarization-induced layer 40' can be formed.

[0077] First, let's describe the formation of the electrode layer 40. The electrode layer 40 can be any electrode layer commonly found in LED components used in lighting and displays, without particular limitation. The electrode layer 40 can be made of materials such as Cr, Ti, Al, Au, Ni, ITO, and their oxides or alloys, either alone or in mixtures. Preferably, it is made of a transparent material that minimizes light emission loss; for example, ITO could be used. Furthermore, the thickness of the electrode layer 40 can be 50–500 nm, but is not limited to this.

[0078] Next, the formation of the polarization induction layer 40' will be described. The polarization induction layer 40' has different electrical polarities at both ends along the length of the micro / nano FIN LED element 109, making it easier for the layer to self-align based on the electric field. Furthermore, when using materials such as metals, conductivity can be improved, and it can also function as an electrode layer. The polarization induction layer 40' has a first polarization induction layer 41 disposed at one end along the length of the element, and a second polarization induction layer 42 disposed at the other end. The electrical polarities of the first polarization induction layer 41 and the second polarization induction layer 42 can be different. For example, the first polarization induction layer 41 can be ITO, and the second polarization induction layer 42 can be a metal or a semiconductor. Moreover, the thickness of the polarization induction layer 40' can be 50–500 nm, but is not limited to this. The first polarization induction layer 41 and the second polarization induction layer 42 can be formed by dividing the upper surface of the second conductive semiconductor layer 30 into two equal parts and arranging them with the same area, but is not limited to this. Alternatively, the area of ​​either the first polarization-induced layer 41 or the second polarization-induced layer 42 can be larger.

[0079] The first conductive semiconductor layer 10, photoactive layer 20, second conductive semiconductor layer 30, and electrode layer 40 or polarization induction layer 40' mentioned above are included as necessary structural elements of micro / nano FIN LED elements 108 and 109. Other phosphor layers, active layers, semiconductor layers, hole module layers, and / or electrode layers may also be included above / below each layer.

[0080] On the other hand, the micro / nano FIN LED elements 108 and 109 included in one embodiment of the present invention further include a protective coating 50 formed on the side surface in a manner that covers the exposed surface of the photoactive layer 20. The protective coating 50 is a film used to protect the exposed surface of the photoactive layer 20, at least completely covering the exposed surface of the photoactive layer 20. For example, it can completely cover both sides, the front end, and the rear end of the micro / nano FIN LED elements 108 and 109. The protective coating 50 preferably comprises one or more of silicon nitride (Si3N4), silicon oxide (SiO2), aluminum oxide (Al2O3), hafnium oxide (HfO2), zirconium oxide (ZrO2), yttrium oxide (Y2O3), titanium dioxide (TiO2), aluminum nitride (AlN), and calcium nitride (GaN), more preferably composed of the above components and transparent, but is not limited thereto. According to a preferred embodiment of the present invention, the thickness of the protective coating is 5 nm to 100 nm, but is not limited thereto.

[0081] The aforementioned micro / nano FIN LED elements 108 and 109 can be manufactured using the manufacturing methods described later, but are not limited thereto.

[0082] Reference Figure 8 and Figure 12 To illustrate, the micro / nano FIN LED elements 108 and 109 are manufactured by the following steps: Step (A), preparing an LED wafer 51 on which a first conductive semiconductor layer 10, a photoactive layer 20, and a second conductive semiconductor layer 30 are sequentially deposited; Step (B), forming an electrode layer 40 or a polarization induction layer 40' patterned with adjacent regions having different electrical polarities on the second conductive semiconductor layer 30 of the LED wafer 51; Step (C), each element having a plane with a length and width of nanometers or micrometers, etching the LED wafer 51 along the thickness direction with a thickness smaller than the length perpendicular to the plane to form a plurality of micro / nano FIN LED pillars 52; and Step (D), separating the plurality of micro / nano FIN LED pillars 52 from the LED wafer 51.

[0083] Reference Figure 8 The present invention describes a method for manufacturing a micro / nano FIN LED element 100 on which an electrode layer 40 is formed on a second conductive semiconductor layer 30. As step (A) of the present invention, the step of preparing an LED wafer 51 on which a first conductive semiconductor layer 10, a photoactive layer 20 and a second conductive semiconductor layer 30 are sequentially deposited on a substrate (not shown) is performed.

[0084] The description of each layer of the LED chip 51 is the same as described above, so it will be omitted here, and the description will focus on the parts that have not been described. First, the thickness of the first conductive semiconductor layer 10 in the LED chip 51 can be thicker than the thickness of the first conductive semiconductor layer 10 in the micro / nano FIN LED element 100. Moreover, each layer in the LED chip 51 can have a c-plane crystal structure.

[0085] Furthermore, the LED chip 51 can undergo a cleaning process, which can appropriately employ conventional chip cleaning solutions and procedures, without particular limitation in this invention. Examples of cleaning solutions include isopropanol, acetone, and hydrochloric acid, but these are not limited to these.

[0086] Next, as step (B) of the present invention, as follows Figure 8As shown in (b), the step of forming an electrode layer 40 on the second conductive semiconductor layer 30 of the LED wafer 51 can be performed. The electrode layer 40 can be formed using conventional methods for forming electrodes on semiconductor layers; for example, it can be formed by sputtering-based vapor deposition. The material of the electrode layer 40, as described above, can be ITO, for example, and it can be formed to a thickness of approximately 150 nm. After the vapor deposition process, the electrode layer 40 can be further subjected to a rapid thermal annealing process; for example, it can be treated at 600°C for 10 minutes. The thickness and material of the electrode layer can be appropriately adjusted, so no particular limitation is made in this invention.

[0087] Next, as step (C) of the present invention, the following steps are performed: each element has a plane with a length and width of nanometer or micrometer, and the LED wafer 51 is etched along the thickness direction in such a way that the thickness perpendicular to the plane is smaller than the length, to form a plurality of micro-nano FIN LED pillars 52.

[0088] The above step (C) specifically includes the following steps: Step (C-1), forming a mask pattern layer 61 on the upper surface of the electrode layer 40 such that each element is a plane with a predetermined pattern having a length and width of nanometers or micrometers. Figure 8 (c)); Step (C-2), according to the pattern of the mask pattern layer 61, a portion of the thickness of the first conductive semiconductor layer 10 is etched along the thickness direction to form multiple micro / nano FIN LED pillars 52. Figure 8 (d)); Step (C-3) involves forming an insulating coating 62 by covering the exposed sides of each micro / nano FIN LED pillar 52. Figure 8 (e)); Step (C-4) is to make the upper surface of the first conductive semiconductor layer 10 between adjacent micro / nano FIN LED pillars 52 ( Figure 8 (f) In a manner in which the insulating coating on the side of the exposed and covered micro / nano FIN LED pillar 52 is not removed, a portion of the insulating coating 62 formed on the upper part of the first conductive semiconductor layer 10 is removed. Figure 8 (f)); Step (C-5), the upper part of the exposed first conductive semiconductor layer ( Figure 8 (f) portion A) is further etched along the thickness direction to form a portion of the side surface of the first conductive semiconductor layer 10. Figure 8 (g) Part B) Exposed multiple micro-nano FIN LED pillars ( Figure 8(g)); Step (C-6), for the first conductive semiconductor layer 10 exposed in each micro / nano FIN LED pillar, the first conductive semiconductor layer 10 is etched from both sides in the width direction toward the side serving as the central side. Figure 8 (i)); and step (C-7), removing the mask pattern layer 61 disposed on the upper part of the electrode layer 40 and the insulating film 62 covering the side surface. Figure 8 (j)).

[0089] First, as step (C-1), the following steps can be performed: a mask pattern layer 61 is formed on the upper surface of the electrode layer 40 such that each element is a plane with a predetermined pattern having a length and width of nanometers or micrometers. Figure 8 (c)).

[0090] The aforementioned mask pattern layer 61 is a layer patterned in a manner that forms the desired planar shape of the LED element to be constructed, and can be formed using known methods and materials used in LED wafer etching. As an example of the aforementioned mask pattern layer 61, it can be a SiO2 hard mask pattern layer. The method for forming a SiO2 hard mask pattern layer can be briefly described by including the following steps: forming an unpatterned SiO2 hard mask layer on the electrode layer 40; forming a metal layer on the SiO2 hard mask layer; forming a predetermined pattern on the metal layer; etching the metal layer and the SiO2 hard mask layer along the thickness direction according to the pattern; and removing the metal layer.

[0091] The aforementioned mask layer is the layer from which the mask pattern layer 61 is derived. For example, it can be formed by vapor deposition of SiO2. The thickness of the aforementioned mask layer can be formed to be 0.5–3 μm, and for example, it can be 1.2 μm. Furthermore, for example, the aforementioned metal layer can be an aluminum layer, which can be formed by vapor deposition. The predetermined pattern formed on the formed metal layer is used to form the mask pattern layer and is formed using conventional methods. For example, the aforementioned pattern is formed by photolithography using a photosensitive material or by known nanoimprint lithography, laser interference lithography, electron beam lithography, etc. Then, the step of etching the metal layer and the SiO2 hard mask layer according to the formed pattern is performed. For example, the aforementioned metal layer can be formed by ICP (inductively coupled plasma), and the SiO2 hard mask layer or the imprinted polymer layer can be etched by a dry etching method such as RIE (reactive ion etching).

[0092] Next, a step can be performed to remove the metal layer, other photosensitive material layer, or polymer layer left by the imprinting process that is present on top of the etched SiO2 hard mask layer. This removal can be performed using conventional wet or dry etching methods, depending on the material; specific details of this are omitted in this invention.

[0093] Figure 8 (c) is a top view of the SiO2 hard mask patterned layer 61 patterned on the electrode layer 40, followed by step (C-2), as follows. Figure 8 As shown in (d), the following steps are performed: A portion of the thickness of the first conductive semiconductor layer 10 is etched along the thickness direction of the LED wafer 51 according to the above pattern to form a plurality of micro / nano FIN LED pillars 52. The etching can be performed using a conventional dry etching method such as ICP.

[0094] Then, as in step (C-3), such as Figure 8 As shown in (e), the following steps are performed: an insulating coating 62 is formed to cover the exposed sides of each micro / nano FIN LED pillar 52. The insulating coating 62 covering the sides can be formed by vapor deposition, and its material can be, for example, SiO2, but is not limited to this. The aforementioned insulating coating 62 can function as a side mask layer, specifically, as... Figure 8 As shown in (i), the side portion of the first conductive semiconductor layer 10 is etched from the side direction to separate the micro / nano FIN LED pillar 52. Figure 8 In the process of part B of (g), the portion of the first semiconductor layer 10 that is to become the micro / nano FIN LED element 100 is not etched, thereby performing the function of preventing damage caused by the etching process. The thickness of the insulating coating 62 described above can be 100 to 600 nm, but is not limited thereto.

[0095] Next, as in step (C-4), such as Figure 8 As shown in (f), the following steps are performed: The upper surface of the first conductive semiconductor layer 10 between adjacent micro / nano FINLED pillars 52 ( Figure 8 (f) In a manner where the insulating coating 62 exposed and covering the side of the micro / nano FIN LED pillar 52 is not removed, a portion of the insulating coating 62 formed on the upper part of the first conductive semiconductor layer 10 is removed. The removal of the insulating coating 62 can be performed by a suitable etching method, taking into account the material. For example, the insulating coating 62 of SiO2 can be removed by dry etching such as RIE.

[0096] Next, as in step (C-5), such as Figure 8 As shown in (g), the following steps are performed: the upper part of the exposed first conductive semiconductor layer 10 is exposed along the thickness direction. Figure 8(f) Further etching of A) forms a plurality of micro-nano FIN LED pillars exposed on a portion of the side of the first conductive semiconductor layer 10. As described above, the exposed side portion (B) of the first conductive semiconductor layer 10 is the portion formed by side etching in a direction parallel to the substrate in the steps described later. As an example, the process of further etching the first conductive semiconductor layer 10 along the thickness direction can be carried out using a dry etching method such as ICP.

[0097] Then, as in step (C-6), such as Figure 8 As shown in (i), the following steps are performed: For the portion of the first conductive semiconductor layer exposed on the side (… Figure 8 (g) B) Side etching is performed along a direction parallel to the substrate. The side etching described above can be performed by wet etching. For example, the wet etching can be performed using a tetramethylammonium hydroxide (TMAH) solution at a temperature of 60 to 100°C.

[0098] Afterwards, following wet etching along the lateral direction, as in step (C-7), as... Figure 8 As shown in (j), the following steps are performed: the mask pattern layer 61 disposed on the upper part of the electrode layer 40 and the insulating coating 62 covering the side are removed. The mask pattern layer 61 and the insulating coating 62 disposed on the upper part can both be made of SiO2 and can be removed by wet etching. As an example, the above wet etching can be performed using BOE (Buffer Oxide Etching).

[0099] According to an embodiment of the present invention, between steps (C) and (D) described above, as step CE), a step of forming a protective coating 50 on the sides of a plurality of micro / nano FIN LED pillars can be performed. The protective coating 50 can be as follows: Figure 8 As shown in (k), as an example, it is formed by vapor deposition with a thickness of 10-100 nm; as another example, it can be formed to a thickness of 40 nm. For the material, as an example, alumina can be used. When using alumina, as an example of the above-mentioned vapor deposition, the ALD (Atomic Layer Deposition) process can be used. Furthermore, in order to form the vapor-deposited protective coating 50 only on the sides of the multiple micro / nano FIN LED pillars, the protective coating 50 on the remaining portions, excluding the sides, can be removed by etching; as an example, by ICP dry etching. On the other hand, Figure 8 (1) shows that the above-mentioned protective coating 50 covers the entire side, but on the side, all or part of the remaining part except the photoactive layer may not have the above-mentioned protective coating 50 formed.

[0100] Next, as in step (D) based on the present invention, as follows: Figure 8As shown in (m), the step of separating the plurality of micro / nano FIN LED pillars 52 from the LED wafer can be performed. This separation can be achieved by cutting with a cutter or by removing the adhesive film; no particular limitation is made in this invention.

[0101] Moreover, referencing Figure 12 This describes a method for manufacturing a micro / nano FIN LED element 109 having a polarization induction layer 40' formed on a second conductive semiconductor layer 30.

[0102] The manufacturing method of the micro / nano FIN LED element 109 with polarization induction layer 40' is the same as the manufacturing method of the micro / nano FIN LED element 100 with electrode layer 40, except for step (B) which replaces electrode layer 40 to form polarization induction layer 40'.

[0103] Reference Figure 12 Explain step (B), such as Figure 12 (b) and Figure 12 (c1) and Figure 12 As shown in (c2), the step of forming a polarization induction layer 40' on the second conductive semiconductor layer 30 of the LED wafer 51 is performed. Specifically, the polarization induction layer 40' is patterned on the second conductive semiconductor layer 30 of the LED wafer 51 in such a way that regions with different electrical polarities are adjacent to each other. More specifically, step (B) includes the following steps: Step (B-1), forming a first polarization induction layer 41 on the second conductive semiconductor layer 30 (… Figure 12 (b)); Step (B-2), etching the first polarization induction layer 41 (not shown) along the thickness direction according to a predetermined pattern; and Step (B-3), forming the second polarization induction layer 42 in the etched recessed portion. Figure 12 (c1) and Figure 12 (c2)). The following addresses the issue of... Figure 8 The different steps (B) of the manufacturing method shown are explained. Figure 12 The remaining explanations can be referenced for... Figure 8 Explanation.

[0104] The above step (B) is the step of forming a polarization induction layer 40' on the second conductive semiconductor layer 30. More specifically, it can be manufactured by the following refined steps.

[0105] First, as step (B-1), the step of forming a first polarization induction layer 41 on the second conductive semiconductor layer 30 can be performed. Figure 12(b) The first polarization induction layer 41 described above is a conventional electrode layer formed on a semiconductor layer. For example, Cr, Ti, Ni, Au, ITO, etc. can be used, and ITO is preferred from the perspective of transparency. The first polarization induction layer 41 can be formed by conventional methods for forming electrodes. For example, it can be formed by sputtering-based vapor deposition. For example, when ITO is used, it is vapor deposited with a thickness of about 150 nm. After the vapor deposition process, it is further subjected to a rapid thermal annealing process, which can be performed at 600°C for 10 minutes. The thickness, material, etc. of the first polarization induction layer 41 can be appropriately adjusted, and no particular limitation is made in this invention.

[0106] Next, as step (B-2), the first polarization induction layer 41 can be etched along the thickness direction according to a predetermined pattern. This step prepares the area to be formed for the second polarization induction layer 42, which will be described later. The pattern can be determined by considering the area ratio and arrangement of the first polarization induction layer 41 and the second polarization induction layer 42 within the device. As an example, the pattern can be as follows: Figure 12 As shown in (d), the first polarization-inducing layer 41 and the second polarization-inducing layer 42 are formed in a side-by-side alternating configuration. The above pattern can be formed using conventional photolithography or nanoimprint lithography, etc., but detailed descriptions of this are omitted in this invention.

[0107] The etching described above can be performed using a suitable, known etching method, taking into account the material of the first polarization induction layer 41. For example, if the first polarization induction layer 41 is ITO, wet etching can be used. In this case, the etching thickness can extend to the upper surface of the second conductive semiconductor layer 30; that is, the entire ITO can be etched along the thickness direction, but this is not a limitation. Specifically, only a portion of the ITO can be etched along the thickness direction, and a second polarization induction layer 42 can be formed in the etched recessed portion. In this case, a two-layer structure is formed on the upper layer at one end of the element, consisting of a first polarization induction layer 41 and a second polarization induction layer 42, both made of ITO.

[0108] Next, as step (B-3), a step of forming a second polarization induction layer 42 on the etched recessed portion can be performed. Figure 12 (c1) and Figure 12 (c2) The second polarization induction layer 42 can be made of a material with a different electrical polarity than the selected first polarization induction layer 41. It can be made of materials commonly used in LEDs and is not particularly limited. For example, it can be a metal or a semiconductor, specifically nickel or chromium. The formation method can be vapor deposition or other known methods, depending on the material. No particular limitation is made in this invention.

[0109] The aforementioned micro / nano FIN LED elements 101, 102, and 103, such as Figure 1 and Figure 2 As shown, the configuration is as follows: Micro / nano FIN LED elements are contacted at both ends of their length direction on two adjacent lower electrodes 211 / 212, 213 / 214, 215 / 216 of the lower electrode line 200. One side of the micro / nano FIN LED elements 101, 102, 103 in the thickness direction, i.e., the first conductive semiconductor layer 10 or the second conductive semiconductor layer 30, is in contact with the lower electrodes 211, 212, 213, 214, 215, 216. Furthermore, if an electrode layer 40 or a polarization induction layer 40' is also included, as... Figure 3 As shown, the micro / nano FIN LED element 108 having electrode layer 40 can be configured such that electrode layer 40 contacts the upper surface of the lower electrode line formed on substrate 402, or such that the side opposite to electrode layer 40, i.e. the side of the first conductive semiconductor layer 10, contacts the upper surface of the lower electrode line and the electrode layer 40 contacts the upper electrode line (not shown).

[0110] On the other hand, in the case of a micro / nano FIN LED element 109 that also includes a polarization induction layer 40', the polarization induction layer 40' can be disposed on the upper surface of the lower electrode line. However, in the case of a plurality of micro / nano FIN LED elements 109 having a polarization induction layer 40', the polarization induction layer 40' of all micro / nano FIN LED elements 109 is not disposed in such a way that all of them are in contact with the upper surface of the lower electrode line. Instead, it is disposed such that, with the help of the polarization induction layer 40', the polarization induction layer 40' can contact the lower electrode line with a higher probability than that of a micro / nano FIN LED element 108 having an electrode layer 40. On the other hand, the micro / nano FIN LED element 108 having an electrode layer 40 and the micro / nano FIN LED element 109 having a polarization induction layer 40', as described above, have a protrusion on the lower surface on the side of the first conductive semiconductor layer 10. Figure 6 11. Figure 11 11) By means of the protrusion 11, the probability of alignment between the electrode layer 40 or the polarization induction layer 40' and the lower electrode line 200 is increased. As a result, the alignment of the plurality of micro-nano FIN LED elements in the micro-nano FIN LED electrode assembly 1000 with respect to the thickness direction can be improved.

[0111] On the other hand, according to one embodiment of the present invention, such as Figure 2As shown, in order to reduce the contact resistance between the lower electrode line 200 and the micro / nano FIN LED elements 101, 102, 103, a conductive semiconductor layer (e.g., [missing information]) is also included for the micro / nano FIN LED elements 101, 102, 103 that are in contact with the lower electrode line 200. Figure 2 In this case, a current-carrying metal layer 501 is used to connect the side of the first conductive semiconductor layer 10) to the lower electrode line 200. The aforementioned current-carrying metal layer 501 can be a conductive metal layer such as silver, aluminum, or gold, and for example, its thickness is formed to be about 10 nm.

[0112] Furthermore, an insulating layer 601 may be included in the space between the self-aligned micro / nano FIN LED elements 101, 102, 103 on the lower electrode line 200 and the upper electrode line 300 that makes upper electrical contact with the micro / nano FIN LED elements 101, 102, 103. The insulating layer 601 prevents electrical contact between the two vertically opposed electrode lines 200, 300, and facilitates the construction of the upper electrode line 300. The insulating layer 601 can be made of insulating materials commonly used in electrical and electronic components, without particular limitation.

[0113] For example, the unit area capable of independently driving 1000 of the aforementioned micro / nano FIN LED electrode components is 1 μm. 2 Up to 100cm 2 Preferably 10μm 2 Up to 100mm 2 However, this is not the only one. Furthermore, the aforementioned micro / nano FIN LED electrode assembly has a unit area of ​​100x100μm. 2 It may include, but is not limited to, 2 to 100,000 micro-nano FIN LED elements.

[0114] On the other hand, the micro / nano FIN LED electrode assembly 1000 according to an embodiment of the present invention described above is manufactured by including the following steps: Step (1), immersing a solution containing a plurality of micro / nano FIN LED elements 1, 101, 102, 103, 108, 109 into a lower electrode line 200 comprising a plurality of lower electrodes 211, 212, 213, 214, 215, 216 separated horizontally at predetermined intervals; Step (2), applying an assembly voltage to the lower electrode line 200, causing the micro / nano FIN LED elements in the solution to... The first conductive semiconductor layer 10 or the second conductive semiconductor layer 4, 30 (or, electrode layer 40 or polarization induction layer 40') of the LED elements 1, 101, 102, 103, 108, 109 are self-aligned in contact with at least two adjacent lower electrodes 211 / 212, 213 / 214, 215 / 216; and step (3) is to form upper electrode lines 300 on the self-aligned plurality of micro-nano FIN LED elements 1, 101, 102, 103, 108, 109.

[0115] First, as step (1) based on the present invention, a solution containing multiple micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 is applied to a lower electrode line 200 comprising multiple lower electrodes 211, 212, 213, 214, 215, and 216 separated horizontally at predetermined intervals.

[0116] The solution containing multiple micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 may contain multiple micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 and a solvent. The solvent acts as a dispersion medium to disperse the micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109, and also facilitates the movement of the micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 to more easily self-align on the lower electrodes 211, 212, 213, 214, 215, and 216. Furthermore, the solution can be ink or paste; for example, the solution can be applied to the lower electrode lines 200 using an inkjet printer. On the other hand, it is explained that in step (1), the LED element and the solvent are mixed in a solution. However, the LED element can be added to the lower electrode line first, and then the solvent can be added. The result is the same as adding the solution. This situation is also included in step (1).

[0117] The solvent described above can be any one or more selected from the group consisting of acetone, water, ethanol, and toluene, with acetone being preferred. However, the type of solvent is not limited to those described above; any solvent that will not cause physical or chemical effects on the micro / nano FIN LED element and evaporates well can be used without restriction. Preferably, 0.001 to 100 parts by weight of micro / nano FIN LED element are added relative to 100 parts by weight of solvent. If less than 0.001 parts by weight are added, the number of micro / nano FIN LED elements connected to the lower electrode is small, making it difficult to perform the normal function of the micro / nano FIN LED electrode assembly. To overcome this problem, multiple additions of solution are required. When the amount exceeds 100 parts by weight, there is a problem that it hinders the alignment of multiple micro / nano FIN LED elements.

[0118] Next, as step (2) based on the present invention, the following steps are performed: an assembly voltage is applied to the lower electrode line 200 to self-align the first conductive semiconductor layer 10 or the second conductive semiconductor layer 30 (or, electrode layer 40 or polarization induction layer 40') of the micro-nano FIN LED elements 1, 101, 102, 103, 108, 109 in the solution with at least two adjacent lower electrodes 211, 212, 213, 214, 215, 216.

[0119] Step (2) above is as follows: by means of the electric field induced by the potential difference between the adjacent lower electrodes 211 / 212, 213 / 214, 215 / 216, charges are induced on the micro-nano FIN LED elements 1, 101, 102, 103, 108, 109, so that the charges are more different from each other as they move towards the two ends along the length direction with the center of the micro-nano FIN LED elements 1, 101, 102, 103, 108, 109 as the center, thereby making the multiple micro-nano FIN LED elements self-aligned, and applying power between any two adjacent lower electrodes of the multiple lower electrodes 211, 212, 213, 214, 215, 216 of the lower electrode line 200, or between the first group consisting of two or more adjacent lower electrodes and the second group consisting of two or more adjacent lower electrodes adjacent to the first group. At this time, the intensity and type of the applied assembly voltage can be referenced by Korean Patent Application Nos. 10-2013-0080412, 10-2016-0092737, and 10-2016-0073572 made by the inventors of this invention.

[0120] Next, as step (3) of the present invention, the step of forming upper electrode lines 300 on a plurality of self-aligned micro / nano FIN LED elements 1, 101, 102, 103, 108, 109 is performed. The upper electrode lines 300 can be constructed by depositing an electrode material after patterning the electrode lines using a known photolithography method; or by performing dry and / or wet etching after depositing the electrode material. In this case, the electrode material is the same as described above for the electrode material of the lower electrode lines, so it will be omitted below.

[0121] On the other hand, between steps (2) and (3) above, the following steps may also be included: forming a power-conducting metal layer 501 that connects the sides of the first conductive semiconductor layer 10 or the second conductive semiconductor layer 30 of each micro / nano FIN LED element 101, 102, 103 in contact with the lower electrode line 200 to the lower electrode line; and forming an insulating layer 601 on the lower electrode line 200 in a manner that does not cover the upper surface of the self-aligned micro / nano FIN LED elements 101, 102, 103.

[0122] The aforementioned conductive metal layer 501 can be constructed by: patterning the lines to be deposited using a photolithography process utilizing a photosensitive material, followed by depositing the conductive metal layer; or, patterning the deposited metal layer and then etching it. This process can be performed using known methods, and Korean Patent Application No. 10-2016-0181410 made by the inventors of this invention is cited by reference.

[0123] After forming the conductive metal layer 501, a step can be performed to form an insulating layer 601 on the lower electrode line 200 without covering the upper surface of the self-aligned micro / nano FIN LED elements 101, 102, and 103. The insulating layer 601 can be formed by vapor deposition of known insulating materials; for example, SiO2 or SiN can be deposited using a PECVD process. x These types of insulating materials can be deposited using MOCVD methods, such as AlN and GaN, or using ALD methods, such as Al2O, HfO2, and ZrO2. On the other hand, the aforementioned insulating layer 601 can be formed without covering the upper surface of the self-aligned micro / nano FINLED elements 101, 102, and 103. This can be achieved by depositing an insulating layer with a thickness that does not cover the upper surface; or by depositing the layer with the upper surface covered and then performing dry etching until the upper surface of the element is exposed.

[0124] The aforementioned micro / nano FIN LED electrode assembly 1000 can be applied to known light sources employing LED elements. As an example, see [reference needed]. Figure 13 , Figure 14a and Figure 14b As can be described, the light sources 2000, 2000', and 3000 according to an embodiment of the present invention may be composed of supports 1100, 1100', and 1100" and micro / nano FINLED electrode assemblies 1000, 1001, 1002, and 1003 disposed on the supports 1100, 1100', and 1100".

[0125] The aforementioned supports 1100, 1100', and 1100" are used to support the micro / nano FIN LED electrode assemblies 1000, 1001, 1002, and 1003. As long as they possess mechanical strength sufficient to perform the supporting function, there are no particular restrictions on their material. As a non-limiting example, materials selected from the group consisting of organic resins, ceramics, metals, and inorganic resins can be cited. Furthermore, the aforementioned supports 1100, 1100', and 1100" can be transparent or opaque.

[0126] Furthermore, the shapes of the aforementioned supports 1100, 1100', and 1100" can be as follows: Figure 13 As shown, it is cup-shaped, but it can also be like... Figure 14a and Figure 14b As shown, the shape is plate-like, but not limited to this; it can have various shapes depending on the shape of the surface on which the light source is mounted. Furthermore, the area and / or volume of the aforementioned supports 1100, 1100', and 1100" can be appropriately set according to the desired brightness characteristics and the number / configuration structure of the micro / nano FIN LED electrode assemblies 1000, 1001, 1002, and 1003, as well as the purpose of the light source; no particular limitation is made in this invention. Moreover, the thickness of the supports 1100, 1100', and 1100" can be appropriately adopted to a degree sufficient to support the micro / nano FIN LED electrode assemblies 1000, 1001, 1002, and 1003, taking into account the strength of the material.

[0127] and, Figure 13 In addition to supporting the micro-nano FIN LED electrode assemblies 1000, 1001, 1002, and 1003, the support 1100 shown can also serve as the housing for the light source.

[0128] Furthermore, one or more micro / nano FIN LED electrode assemblies 1000, 1001, 1002, and 1003 can be included within light sources 2000, 2000', and 3000. In this case, the micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 included in a single micro / nano FIN LED electrode assembly 1000, 1001, 1002, and 1003 can be composed of elements that substantially emit a certain color of light, such as UV, blue, green, yellow, amber, and red. On the other hand, if light sources 2000' and 3000 include two or more micro / nano FIN LED electrode assemblies 1001, 1002, and 1003, and they are configured to be driven independently, they can also be configured to emit multiple colors of light. Such light sources can be applied to displays such as LCDs or OLEDs. Furthermore, when there are two or more micro / nano FIN LED electrode components 1000, 1001, 1002, and 1003, their arrangement can be as follows: Figure 14a As shown, arranged linearly along a certain direction, or as Figure 14b The arrangement shown is either regular or irregular, with surfaces arranged in a face-like pattern.

[0129] Furthermore, light sources 2000, 2000', and 3000 may also include a color-changing material that causes the light emitted from the micro / nano FIN LED electrode components 1000, 1001, 1002, and 1003 to have a specific wavelength. This color-changing material functions to emit light with a specific wavelength when excited by light emitted from the micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109. As an example, such as... Figure 13 As shown, when the support body 1100 is cup-shaped and has an internal storage section, the aforementioned color-changing material can be disposed within the embedded layer 1200 inside the storage section, or as... Figure 14a and Figure 14b As shown, when the supports 1100′ and 1100″ are flat, the color-changing material can be set in the form of coating layers 1200′ and 1300.

[0130] Furthermore, the aforementioned micro / nano FIN LED elements 1, 101, 102, 103, 108, and 109 can be elements that emit any of the following colors of light: UV, blue, green, yellow, amber, and red. Considering the color of light emitted by the selected element, the color-changing material can be crystalline. For example, in the case of a UV-emitting element, the aforementioned color-changing material can be any one or more of blue, cyan, yellow, green, amber, and red, thereby constituting a monochromatic light source or a white light source in any color. As an example of constituting a white light source, in the case of a UV-emitting element, the aforementioned color-changing material can be a mixture of any one of blue / yellow, red / cyan, blue / green / red, and blue / green / amber / red, thereby constituting a white light source. Moreover, in the case of a blue-emitting element, the color-changing material can be any one or more of yellow, cyan, green, amber, and red, thereby constituting a monochromatic light source or a white light source. As an example of the above-mentioned white light source, any two or more hues can be combined, specifically, a mixture of any one of blue / yellow, red / cyan, blue / green / red, and blue / green / amber / red can be combined to form a white light source.

[0131] On the other hand, the aforementioned color-changing material can be a known phosphor or quantum dot used in lighting, displays, etc., and the present invention does not particularly limit the specific type of it.

[0132] The aforementioned light sources 2000, 2000', and 3000 can constitute electrical and electronic components or electronic devices by themselves or in combination with other known structures. As an example, the aforementioned known structures may include an input section for inputting various signals necessary for the operation of the micro / nano FIN LED electrode components 1000, 1001, 1002, and 1003; a control section for controlling signals; a heat dissipation section such as a heat sink to transfer the heat generated by driving the micro / nano FIN LED electrode components 1000, 1001, 1002, and 1003 to the outside; and a housing that encapsulates the light source and other structures.

[0133] Furthermore, the aforementioned light sources 2000, 2000′, and 3000 can be applied to various electrical and electronic devices requiring light emission. Examples include various LED lighting for home and vehicle use, displays, medical equipment, beauty equipment, and various optical devices. On the other hand, the aforementioned medical devices, such as… Figure 15 As shown, as an example, it could be a photo-induced effect LED light source 4000 that emits light of a predetermined wavelength into the brain to activate neural networks in the corresponding areas. The aforementioned photo-induced effect LED light source 4000 can include multiple micro / nano FIN LED electrode assemblies 1000 on a support 1100″′. Furthermore, the aforementioned beauty device, such as... Figure 16As shown, for example, a skin beauty LED mask 5000 is configured to have multiple micro-nano FIN LED electrode assemblies 1000 on the inner side of the mask support 3100 that comes into contact with the skin.

[0134] The above describes one embodiment of the present invention, but the concept of the present invention is not limited to the embodiment disclosed in the specification. Those skilled in the art can easily make other embodiments within the scope of the same concept by adding, changing, deleting, or supplementing structural elements, and these are also included within the scope of the present invention.

Claims

1. A method for manufacturing a micro / nano FIN LED electrode assembly, wherein, include: Step (1): On a lower electrode line containing multiple lower electrodes separated horizontally at predetermined intervals, a solution containing multiple micro / nano FIN LED elements is introduced. The micro / nano FIN LED elements are cylindrical elements with a plane having a length and width of nanometers or micrometers and a thickness smaller than the length perpendicular to the plane. A first conductive semiconductor layer, a photoactive layer, a second conductive semiconductor layer, and an electrode layer or polarization induction layer are sequentially deposited along the thickness direction. Each micro / nano FIN LED element also includes a protective coating. The protective coating is formed on the side of the micro / nano FIN LED element in such a way as to cover the exposed surface of the photoactive layer to prevent electrical short circuits caused by contact between the photoactive layer and the lower electrode. Step (2) involves applying an assembly voltage to the lower electrode circuit in such a way that the first conductive semiconductor layer, electrode layer, or polarization induction layer of each of the micro / nano FIN LED elements in the solution contacts the upper surface of at least two adjacent electrodes among the plurality of lower electrodes, thereby causing the plurality of micro / nano FIN LED elements to self-align. as well as Step (3) is to form upper electrode lines on the self-aligned plurality of micro / nano FIN LED elements.

2. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, The predetermined interval is smaller than the length of the micro / nano FIN LED element.

3. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, Between steps (2) and (3), the following is also included: Step (4) forms a current-carrying metal layer connecting the lower electrodes that are in contact with the sides of the first conductive semiconductor layer, electrode layer, or polarization-inducing layer of each micro / nano FIN LED element that is in contact with at least two lower electrodes; and Step (5) involves forming an insulating layer on the lower electrode lines in a manner that does not cover the upper surfaces of the self-aligned plurality of micro / nano FIN LED elements.

4. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, The length of the micro-nano FIN LED element is 1000-10000 mm, and the thickness is 100-3000 mm.

5. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, The length-to-thickness ratio of the micro-nano FIN LED element is 3:1 or higher.

6. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, The protective coating has a thickness of 5 nm to 100 nm.

7. The method for manufacturing micro / nano FIN LED electrode components according to claim 1, characterized in that, The polarization induction layer is composed of a first polarization induction layer and a second polarization induction layer arranged adjacent to each other along the length direction of the element, and the electrical polarities of the first polarization induction layer and the second polarization induction layer are different from each other.

8. The method for manufacturing micro / nano FIN LED electrode components according to claim 7, characterized in that, The first polarization induction layer is ITO, and the second polarization induction layer is a metal or a semiconductor.

9. A micro / nano FIN LED electrode assembly, wherein, include: The lower electrode circuit includes multiple lower electrodes separated horizontally at predetermined intervals; Multiple micro / nano FIN LED elements are cylindrical elements with a planar length and width of nanometers or micrometers and a thickness smaller than the length perpendicular to the planar surface. A first conductive semiconductor layer, a photoactive layer, a second conductive semiconductor layer, and an electrode layer or polarization induction layer are sequentially deposited along the thickness direction. Each micro / nano FIN LED element also includes a protective coating formed on the side surface of the micro / nano FIN LED element to cover the exposed surface of the photoactive layer, preventing short circuits caused by contact between the photoactive layer and the lower electrode. The multiple micro / nano FIN LED elements are arranged such that the first conductive semiconductor layer or electrode layer or polarization induction layer contacts the upper surfaces of at least two adjacent electrodes among the multiple lower electrodes. The upper electrode circuitry is configured on the plurality of micro / nano FIN LED elements.

10. The micro / nano FIN LED electrode assembly according to claim 9, characterized in that, Either the first conductive semiconductor layer or the second conductive semiconductor layer comprises a p-type GaN semiconductor layer, and the other comprises an n-type GaN semiconductor layer. The thickness of the p-type GaN semiconductor layer is 10–350 mm, the thickness of the n-type GaN semiconductor layer is 100–3000 mm, and the thickness of the photoactive layer is 30–200 mm.

11. The micro / nano FIN LED electrode assembly according to claim 9, characterized in that, On the lower surface of the first conductive semiconductor layer of the micro / nano FIN LED element, a protrusion with a predetermined width and thickness is formed along the length direction of the micro / nano FIN LED element.

12. The micro / nano FIN LED electrode assembly according to claim 11, characterized in that, The width of the protrusion has a length that is less than 50% of the width of the micro / nano FIN LED element.

13. The micro / nano FIN LED electrode assembly according to claim 9, characterized in that, The light-emitting area of ​​the micro-nano FIN LED element is more than twice the cross-sectional area of ​​the micro-nano FIN LED element.

14. A light source, wherein, include: Support body; as well as The micro / nano FIN LED electrode assembly according to claim 9 is provided such that a lower electrode circuit is arranged on the support.

15. The light source according to claim 14, wherein, It also contains a color-changing material that is excited by light irradiated from the micro / nano FIN LED electrode assembly.

16. The light source according to claim 14, wherein, The micro / nano FIN LED electrode assembly has a unit area of ​​100x100 mm. 2 It contains 2 to 100,000 micro-nano FINLED elements.

17. The light source according to claim 14, wherein, The micro-nano FIN LED element is an element that emits any one of the following colors of light: UV, blue, green, yellow, amber, and red.

18. The light source according to claim 14, wherein, It has multiple micro / nano FIN LED electrode assemblies to emit at least two light colors among blue, green, yellow, amber and red, and each micro / nano FIN LED electrode assembly contains a micro / nano FIN LED element that emits substantially the same light color.

19. The light source according to claim 15, wherein, In the case where the micro / nano FIN LED electrode assembly includes a micro / nano FIN LED element that irradiates UV light, the color-changing material includes at least one of blue, cyan, yellow, green, amber, and red, causing the light source to emit white light; or, In the case where the micro-nano FIN LED electrode assembly is a micro-nano FIN LED element that emits blue light, the color-changing material includes any one or more of yellow, cyan, green, amber, and red, causing the light source to emit white light.

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