Method of forming junction field effect transistor
By simplifying the fabrication process of junction field-effect transistors and employing an etching method with one layer of polysilicon and one layer of TEOS, the problem of residual stacking caused by bird-beak-shaped field oxygen structures was solved, thereby improving device performance and reducing costs.
CN115692205BActive Publication Date: 2026-06-23SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUAHONG GRACE SEMICON MFG CORP
- Filing Date
- 2022-10-31
- Publication Date
- 2026-06-23
Smart Images
Figure CN115692205B_ABST
Abstract
The application provides a forming method of a junction field effect transistor, and is applied to the technical field of semiconductors. The forming method of the junction field effect transistor is simplified by adjusting process steps, a new forming method of the junction field effect transistor is provided, the source region of the junction field effect transistor can be formed by one-step polysilicon deposition, and two-step polysilicon deposition is not needed as in the prior art, that is, the forming method provided by the application realizes the process flow of changing from two-step polysilicon deposition to one-step polysilicon deposition, and the process steps are simplified and the cost is saved.
Need to check novelty before this filing date? Find Prior Art