Support unit, heating unit, and substrate processing apparatus including the same

Abstract

The present invention relates to a support unit, a heating unit, and a substrate processing apparatus comprising a support unit and a heating unit. The support unit comprises a heating unit for heating a substrate, and wherein the heating unit comprises a plurality of heating members, and a plurality of first power lines and a plurality of second power lines, the plurality of first power lines and the plurality of second power lines providing supply and return paths for power to and from the plurality of heating members, and wherein the plurality of second power lines are connected to each of the plurality of first power lines via the plurality of heating members, and at least two heating members are connected to each first power line and at least two heating members are connected to each second power line, and the at least two heating members are connected in parallel between each first power line and each second power line.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0099231, filed with the Korean Patent Office on July 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the present invention described herein relate to a support unit, a heating unit, and a substrate processing apparatus including the support unit and the heating unit. More specifically, it relates to a heating unit having a relatively simple matrix configuration and a substrate processing apparatus including the heating unit. Background Technology

[0004] Integrated circuit devices including semiconductor devices or display devices including flat panel display devices can be manufactured using substrate processing equipment, which includes various process chambers such as deposition chambers, sputtering chambers, etching chambers, cleaning chambers, and drying chambers. In such process chambers, support units in which the substrate is placed on top and heating units having a matrix configuration capable of heating the substrate can be provided.

[0005] A known matrix-configured heating unit has a configuration in which multiple diodes connected to multiple heaters are all arranged in one direction, and requires control lines that sum to the number of rows and columns of the matrix to operate each of the multiple heaters. As the number of heaters in the heating unit increases, the wiring for the electrical connections of the substrate processing equipment including the heating unit may become complex, the configuration complexity may increase, and therefore the implementation of the substrate processing equipment including the heating unit may be difficult. Summary of the Invention

[0006] An embodiment of the present invention provides a heating unit that can reduce the number of control lines to have a relatively simple matrix configuration.

[0007] An embodiment of the present invention provides a substrate processing apparatus that includes a heating unit capable of reducing the number of control lines to have a relatively simple matrix configuration.

[0008] An embodiment of the present invention provides a heating unit capable of controlling more heaters via the same number of control lines.

[0009] The technical objectives of this invention are not limited to those mentioned above, and other unmentioned technical objectives will be apparent to those skilled in the art from the following description.

[0010] The present invention provides a support unit for supporting a substrate. The support unit includes: a heating unit for heating the substrate, wherein the heating unit comprises: a plurality of heating elements; and a plurality of first power lines and a plurality of second power lines, the plurality of first power lines and the plurality of second power lines providing supply and return paths for power to and from the plurality of heating elements, wherein the plurality of second power lines are connected to each of the plurality of first power lines via the plurality of heating elements, and at least two heating elements are connected to each of the first power lines and at least two heating elements are connected to each of the second power lines, and at least two heating elements are connected in parallel between each of the first power lines and each of the second power lines.

[0011] In the implementation scheme, there are L heating elements connected in parallel between each first power line and each second power line, N first power lines, and M second power lines, wherein the total number of heating elements is N*M*L.

[0012] In one embodiment, the support unit further includes: a power unit connected to a plurality of first power lines and a plurality of second power lines to supply power to a plurality of heating elements, and the power unit includes a power source provided in the same number as the at least two heating elements connected in parallel between each of the first power lines and each of the second power lines.

[0013] In one embodiment, the heating element includes a heating component and a diode connected in series, and at least two diodes are connected in parallel at each of the plurality of first electric lines and each of the plurality of second electric lines where they intersect, and at least two diodes are connected to the corresponding heating component such that current flows in the opposite direction to each of the first electric lines and each of the second electric lines.

[0014] In one embodiment, the heating unit includes: a first power supply-return selection switch assembly connected between the power unit and each of the first power lines; and a second power supply-return selection switch assembly connected between the power unit and each of the second power lines.

[0015] In the implementation scheme, each of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly is provided in the same number as the at least two heating elements connected in parallel between each first power line and each second power line.

[0016] In the implementation scheme, each power source of the power unit is connected between a corresponding first power supply-return selection switch assembly and a corresponding second power supply-return selection switch assembly.

[0017] In one embodiment, the support unit further includes a controller for controlling the on / off state of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly.

[0018] In the implementation scheme, at least two heating elements connected in parallel between each first power line and each second power line include a first heating element and a second heating element, wherein the heating unit further includes: a power unit connected to the plurality of first power lines and the plurality of second power lines and including a first power source for supplying power to the first heating element and a second power source for supplying power to the second heating element; a first power supply-return selection switch assembly including a first switch assembly connected between the first power source and each first power line, and a second switch assembly connected between the second power source and each first power line; and a second power supply-return selection switch assembly including a third switch assembly connected between the first power source and each second power line, and a fourth switch assembly connected between the second power source and each second power line.

[0019] In the implementation, the first heating element and the second heating element each include a heating element and a diode connected in series, and the diode of the first heating element and the diode of the second heating element are connected to the corresponding heating element such that current flows in the opposite direction to each of the commonly connected first electric lines.

[0020] In one embodiment, the support unit further includes a controller that controls the on / off state of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly.

[0021] This invention provides a heating unit. The heating unit includes: a plurality of heating wire assemblies; a plurality of first power lines connected to any one of the plurality of heating wire assemblies; a plurality of second power lines connected to any one of the plurality of heating wire assemblies; a first power source configured to supply current to the first power lines and return current to the second power lines; and a second power source configured to supply current to the second power lines and return current to the first power lines; wherein a component is simultaneously connected to any one of the plurality of first power lines and any one of the plurality of second power lines. A single heating wire assembly for an electric power line, wherein the heating wire assembly comprises: a first heating wire; a second heating wire connected in parallel to the first heating wire; a first heater disposed at the first heating wire; a second heater disposed at the second heating wire; a first diode connected in series at the first heating wire to the first heater; a second diode connected in series at the second heating wire to the second heater; and a switching unit for controlling the on / off state of the first heater and the second heater included in the heating wire assembly.

[0022] In one embodiment, the first diode and the second diode included in the heating wire assembly are connected such that the current flowing in the first heater and the current flowing in the second heater flow in opposite directions to each other.

[0023] In the implementation scheme, the switching unit includes: a first power supply-return selection switch assembly, the first power supply-return selection switch assembly including a first switch assembly connected between the first power source and each first power line, and a second switch assembly connected between the second power source and each first power line; and a second power supply-return selection switch assembly, the second power supply-return selection switch assembly including a third switch assembly connected between the first power source and each second power line, and a fourth switch assembly connected between the second power source and each second power line.

[0024] In the implementation scheme, the heating unit further includes a controller for controlling the on / off state of the first switching assembly, the second switching assembly, the third switching assembly, and the fourth switching assembly.

[0025] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a process chamber having a processing space; a support unit positioned within the processing space and supporting a substrate; a heating unit disposed at the support unit; a gas supply unit for supplying gas for processing the substrate to the processing space; and a plasma generation unit for generating plasma from the gas.

[0026] In one embodiment, the support unit further includes a connecting plate capable of embedding at least one of a plurality of first power lines and a plurality of second power lines.

[0027] In the implementation scheme, the plurality of first power lines and the plurality of second power lines are embedded in the same location as the heating unit.

[0028] In one embodiment, the plasma generation unit includes a gas dispersion plate, which is fixed to the process chamber by a support unit.

[0029] In the implementation scheme, the bottom surface of the gas dispersion plate is anodized to prevent electric arcing caused by plasma.

[0030] According to embodiments of the present invention, the matrix-configured heating units can be arranged in the opposite direction to the adjacent plurality of diodes, and can have current supplied to the plurality of heaters via additional switches and diodes flowing in both the forward and reverse directions. Therefore, the number of control lines capable of controlling the heaters can be reduced, and structural complexity of the substrate processing equipment including the heating units can be effectively prevented even when the matrix configuration of the heating units becomes more complex.

[0031] The effects of this invention are not limited to the objectives mentioned above, and those skilled in the art will understand other unmentioned effects from the following description. Attached Figure Description

[0032] The above and other objectives and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise specified, the same reference numerals refer to the same parts in the various drawings.

[0033] Figure 1 The circuit diagram of a known heating unit is shown below.

[0034] Figure 2 A circuit diagram of a heating unit according to an embodiment of the present invention is shown below.

[0035] Figure 3 and Figure 4 Here is a circuit diagram illustrating a method for controlling a heating unit according to an embodiment of the present invention.

[0036] Figure 5 A plan view of a substrate processing apparatus to which the heating unit is applied, according to an embodiment of the present invention, is shown.

[0037] Figure 6 A plan view of a substrate processing apparatus to which the heating unit is applied is shown as an example of another embodiment of the concept according to the present invention.

[0038] [Symbol Explanation]

[0039] 10: Substrate processing equipment

[0040] 100: Chamber

[0041] 102: Exhaust port

[0042] 130: Lining

[0043] 151: Exhaust wire

[0044] 200: Substrate support unit

[0045] 210: Electrostatic chuck

[0046] 220: Dielectric plate

[0047] 221: First supply fluid channel

[0048] 223: First electrode

[0049] 223a: Primary power supply

[0050] 223b: Switch

[0051] 223c: First Electric Power Line

[0052] 224: Heating component

[0053] 225: Heater / Heating Component

[0054] 225a: Power Supply Unit

[0055] 225aa: Primary power supply

[0056] 225ab: Second power supply

[0057] 225c: Second power line

[0058] 226: Diode

[0059] 227: Connecting electrode unit

[0060] 228: Controller

[0061] 230: Main body / bottom electrode

[0062] 231: First circulating fluid channel

[0063] 231a: Heat transfer medium storage unit

[0064] 231b: Heat transfer medium supply line

[0065] 232: Second circulating fluid channel

[0066] 232a: Cooling fluid storage unit

[0067] 232b: Cooler

[0068] 232c: Cooling fluid supply line

[0069] 233: Second supply fluid channel

[0070] 235a: Third power supply

[0071] 235c: Third Power Line

[0072] 236: Adhesive

[0073] 240: Circular component

[0074] 240a: External part

[0075] 240b: Internal section

[0076] 250: Bottom cover

[0077] 253: Connecting components

[0078] 270: Board

[0079] 280: Connecting plate

[0080] 290: Control panel

[0081] 330: Top electrode

[0082] 400: Gas Supply Unit

[0083] 410: Gas supply nozzle

[0084] 420: Gas supply line

[0085] 421: Valve

[0086] 430: Gas storage unit

[0087] 500: Exhaust damper / exhaust unit

[0088] 2251: First heater

[0089] 2252: Second heater

[0090] L1: First power line

[0091] L2: Second power line

[0092] S: Substrate

[0093] SA: First Power Supply - Return Selection Switching Device

[0094] SB: Second Power Supply - Return Selection Switch

[0095] Sa: Switch

[0096] Sb: Switch

[0097] S1: Switch

[0098] S2: Switch

[0099] S1: First switching device

[0100] S2: Second switching device

[0101] S3: Third switching device

[0102] S4: Fourth switching device Detailed Implementation

[0103] The inventive concept can be modified in various ways and can take various forms, and specific embodiments thereof will be illustrated and described in detail in the drawings. However, embodiments of the inventive concept are not intended to limit the specific disclosed forms, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions included within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of such technologies may be omitted when the essence of the inventive concept may be unclear.

[0104] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, unless the context clearly indicates otherwise, the singular forms "a / an" and "the" are intended to include the plural forms. It should further be understood that the terms "comprises and / or comprising," when used in this specification, designates the presence of stated features, integers, steps, operations, components, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, components, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Furthermore, the term "exemplary" is intended to refer to an instance or example.

[0105] It should be further understood that although the terms "first," "second," "third," etc., may be used herein to describe various components, parts, regions, layers, and / or segments, such elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or segment from another. Therefore, without departing from the teachings of the inventive concept, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment.

[0106] In this specification, unless otherwise specified, the singular form includes the plural form. Furthermore, for clarity, the shape or size of components in the figures may be enlarged.

[0107] Although not defined, all terms used herein (including technical or scientific terms) are to have the same meaning as commonly accepted in the art to which the inventive concept pertains. Even if not explicitly defined herein, terms as defined in a general dictionary are to be understood to have the same meaning as those intended by the relevant art and disclosure of this application, and should neither be conceptual nor overly formal. The terms used herein are provided to describe embodiments but do not limit the inventive concept. In this specification, unless specifically stated otherwise, the singular form includes the plural form. The expression 'include' and its various verb variations such as 'including' as used herein do not exclude the presence or addition of one or more components, substances, elements, steps, operations, and devices.

[0108] The terms "unit," "component," and similar terms may be used to refer to a unit that performs at least one function or operation. For example, such terms may mean a software or hardware component, such as an FPGA or an ASIC. However, such terms are not limited to software or hardware. "Units," "components," and similar terms may be configured to be included within an addressable storage medium or configured to operate one or more processors.

[0109] Therefore, "unit," "component," and the like can include constituent components such as software components, object-oriented software components, class components and task components, procedures, functions, attributes, programs, subroutines, program code segments, drivers, firmware, microcode circuits, data, databases, data structures, tables, arrays, and variables. Components and functions provided within a "unit," "component," and the like can be divided into components and "units," "components," and the like, or can be linked with other additional components.

[0110] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. The embodiments of the inventive concept can be modified in various ways, and the scope of the inventive concept should not be construed as limited to the following embodiments. The embodiments of the present invention are provided to more fully explain the inventive concept to those skilled in the art. Therefore, the shapes of the components in the drawings are enlarged to emphasize a clearer explanation.

[0111] Substrate processing equipment for manufacturing integrated circuit devices, including semiconductor devices, or display devices, may include, but is not limited to, deposition chambers, etching chambers, sputtering chambers, coating chambers, exposure chambers, developing chambers, cleaning chambers, and drying chambers. In each of these process chambers, each of the following processes can be performed on the substrate: deposition, etching, sputtering, coating, exposure, developing, cleaning, and drying.

[0112] Generally, a support unit for placing a substrate can be provided in a process chamber. This support unit may include a support plate capable of supporting the substrate and a heating unit capable of heating the substrate when the desired process is performed on it. Depending on the situation, the heating unit may be housed within the support plate. The heating unit may have a matrix configuration including multiple heaters for heating the substrate. For example, the heating unit may include multiple heaters configured in a matrix configuration to provide multiple heating zones, multiple diodes connected to the multiple heaters, a controller capable of controlling the multiple heaters, and wiring harnesses connecting the multiple diodes to the controller.

[0113] Figure 1 The circuit diagram of a known heating unit is shown below. Figure 1 In the diagram, components indicated by a single short dashed line represent multiple heaters, components indicated by dashed lines represent wiring harnesses, and components indicated by double short dashed lines represent controllers.

[0114] like Figure 1 As shown, a known heating unit has a configuration in which multiple diodes connected to multiple heaters are arranged in one direction. In a known heating unit including switches Sa, Sb, S1 and S2, switches S1 and S2 are turned on to operate the heaters located in the first row and first column [1,1].

[0115] like Figure 1The known heating unit with a 2×2 matrix configuration requires four control lines to operate the four heaters as a whole. Therefore, if the known heating unit has an N×N matrix configuration, 2N control lines are required to operate the N×N heaters as a whole. As mentioned above, as the number of heaters in the heating unit increases, the wiring for the electrical connections of the substrate processing equipment including the heating unit may become more complex, the space required for the heating unit may increase, and the configuration complexity for including the heating unit may increase. Therefore, due to these problems, it may be difficult to implement a substrate processing equipment including heating units.

[0116] To address the aforementioned problems, the heating unit of an exemplary embodiment of the present invention may have a structure in which adjacent diodes are arranged in opposite directions in a plurality of heating regions.

[0117] refer to Figure 2 The heating unit according to the present invention may include a plurality of heating elements 224, a plurality of first power lines L1 and a plurality of second power lines L2 providing paths for supplying and returning power to the plurality of heating elements 224. According to an embodiment, the plurality of second power lines L2 may be connected to each of the plurality of first power lines L1 via the plurality of heating elements 224. At least two heating elements 224 may be connected to each of the first power lines L1, and at least two heating elements 224 may be connected to each of the plurality of second power lines L2. At least two heating elements 224 may be connected in parallel between each of the plurality of first power lines L1 and each of the plurality of second power lines L2.

[0118] According to an embodiment of the invention, a plurality of first power lines L1 and a plurality of second power lines L2 may be electrically connected via heating element 224. Furthermore, the heating element 224 connecting any of the plurality of first power lines L1 to any of the plurality of second power lines L2 comprises at least two heating elements 224, thereby allowing more precise control by controlling a greater number of heating elements 224 with the same number of control lines.

[0119] According to the implementation plan, when there are L heating elements 224 connected in parallel between each first electric line L1 and each second electric line L2, and there are N or more first electric lines L1 and M or more second electric lines L2, the total number of heating elements 224 can be N*M*L. (Reference) Figure 2 There are two heating elements 224 connected in parallel between each first electric line L1 and each second electric line L2. There are two first electric lines L1 and two second electric lines L2. Therefore, the total number of heating elements 224 can be 2*2*2.

[0120] According to the implementation scheme, a power supply unit 225a connected to a plurality of first power lines L1 and a plurality of second power lines L2 may be further included to supply power to a plurality of heating elements 224. The power supply unit 225a may be a DC power source.

[0121] According to the embodiment, the power supply unit 225a may include the same number of power sources (225aa and 225ab) as the number of at least two heating elements 224 connected in parallel between the first power line L1 and the second power line L2. Therefore, there is an effect of supplying power to the diode 226 through each power source in different directions. According to the embodiment, two heating elements 224 are provided, and two power sources (225aa and 225ab) are provided. If three heating elements 224 are provided, three power sources can be provided.

[0122] Each of the heating elements 224 may include a heating element 225 and a diode 226 connected in series. In this case, at least two diodes 226 may be connected in parallel at the points where the plurality of first electric lines L1 and the plurality of second electric lines L2 intersect each other.

[0123] refer to Figure 2 Two diodes 226 are connected in parallel at the point where the first electric field line L1 and the second electric field line L2 intersect. In this case, the two diodes 226 can be connected to the corresponding heating element 225, so that the current flows in the opposite direction to the first electric field line L1 and the second electric field line L2.

[0124] That is, at least two heating elements 224 are provided that are electrically connected to the first power line L1 and the second power line L2, and each of the heating elements 224 includes a heating component 225 and a diode 226, and in this case, the connected diodes 226 can be connected in opposite directions.

[0125] according to Figure 2 One embodiment discloses a power supply unit 225a connected to a plurality of first power lines L1 and a plurality of second power lines L2, and including a first power source 225aa for supplying power to a first heating element 224 and a second power source 225ab for supplying power to a second heating element 224. According to the embodiment, the first heating element may be a heating element including a heating assembly connected to a diode in a first direction, and the second heating element may be a heating element including a heating assembly connected to a diode in a second direction.

[0126] The heating unit may further include a switching assembly for allowing current to flow to a diode 226 connected in the opposite direction.

[0127] According to the implementation plan, a first power supply-return selection switch SA connected between the first power source 225aa and the first power line L1 and a second power supply-return selection switch SB connected between the first power source 225aa and each of the second power lines L2 can be set up.

[0128] The first power supply-return selection switch SA may include a first switch S1 connected between the first power supply 225aa and each of the first power lines L1, and a second switch S2 connected between the second power supply 225ab and each of the first power lines L1.

[0129] The second power supply-return selection switch SB may include a third switch S3 connected between the first power supply 225aa and the second power line L2, and a fourth switch S4 connected between the second power supply 225ab and the second power line L2.

[0130] Each of the first power supply-return selection switch SA and the second power supply-return selection switch SB can be configured in the same number as the number of at least two heating elements 224 connected in parallel between the first power line L1 and the second power line L2.

[0131] According to the implementation plan, two heating components 224 are connected in parallel between the first power line L1 and the second power line L2, and two first power supply-return selection switch devices SA and two second power supply-return selection switch devices SB may also be provided.

[0132] Each of the power supplies (225aa and 225ab) of the power supply unit 225a can be connected between the corresponding first power supply-return selection switch SA and the corresponding second power supply-return selection switch SB.

[0133] According to the embodiment, a controller 228 may be further included for controlling the on / off switching of the first power supply-return selection switch SA and the second power supply-return selection switch SB. In the heating unit according to the embodiment, a plurality of heaters and a plurality of diodes 226 may provide a plurality of heating zones, and adjacent diodes 226 in the plurality of heating zones may be arranged in substantially opposite directions.

[0134] The controller 228 of the heating unit can control multiple switches to operate multiple heaters and multiple diodes 226 arranged in opposite directions.

[0135] The heating unit according to the present invention can operate at least one desired heater among a plurality of heaters via an additional switch, while the wiring harness structure remains substantially unchanged from that of diodes 226 which can be arranged in opposite directions. Therefore, the wiring for electrical connections to a substrate processing apparatus including the heating unit can be simplified, and the substrate processing apparatus can also have a simpler configuration. That is, while it is known that four control lines can be used to control four heaters (i.e., two power supply lines and two power return lines can be used to control four heaters), in the present invention, the same number of control lines can be used to control eight heaters, and thus more heaters can be precisely controlled.

[0136] Figure 3 and Figure 4 Here is a circuit diagram illustrating a method for controlling a heating unit according to an embodiment of the present invention.

[0137] Figure 3 This example illustrates the configuration for operating the switches of the heaters in the first row and first column [1,1]. For example... Figure 3 As illustrated, when the controller 228 turns on the first switch S1 connected to the first power line L1 where the heater is located and the third switch S3 connected to the second power line L2 where the heater is located, as indicated by arrow I, in this case, the current in the heating unit can flow from the power source along the path including switch S1, the heater in the first row and the first column and switch S3.

[0138] Figure 4 An example is shown of the configuration of switches for operating the heaters in the first column and second row [1,2]. Controller 228 can control a second switch S2 connected to the first power line L1 where the heaters are located and a fourth switch S4 connected to the second power line L2 where the heaters are located, so that the flow to the heaters in the first column and second row can flow as indicated by arrow I. Here, the current in the heating unit can flow from the power supply along a path including switch S4, the heaters in the first column and second row, and switch S2.

[0139] exist Figure 3 and Figure 4 In the illustrated heating unit, the configuration of the heaters for allowing current to flow to the heaters in the first column and first row, as well as the heaters in the first column and second row, can be substantially the same. In this case, by reversing the direction of current flow through the wiring harness and the configuration direction of the adjacent diodes 226, current can flow to only one or more of the desired heaters.

[0140] The matrix configuration of the heating unit according to the embodiment can have the following configuration: multiple adjacent diodes 226 can be arranged in opposite directions, and the current supplied to multiple heaters through additional switches and diodes 226 can flow in both the forward and reverse directions. Therefore, the number of control lines for the heaters can be reduced, and when the number of control lines is the same, more heaters can be controlled compared to known heaters. Thus, even when the matrix configuration of the heating unit becomes more complex, the structural complexity of the substrate processing equipment including the heating unit can be effectively prevented.

[0141] Figure 5 A plan view of a substrate processing apparatus to which the heating unit is applied, according to an embodiment of the present invention, is shown.

[0142] refer to Figure 5 The substrate processing apparatus 10 uses plasma to process the substrate S. For example, the substrate processing apparatus 10 may perform an etching process on the substrate S. The substrate processing apparatus 10 may include a chamber 100, a substrate support unit 200, a plasma generation unit 300, a gas supply unit 400, and an exhaust baffle 500.

[0143] Chamber 100 provides a processing space in which substrate processing processes are performed. Chamber 100 may have a processing space and may be configured in a sealed shape. Chamber 100 may be made of a metallic material. Chamber 100 may be made of aluminum. Chamber 100 may be grounded. Vent 102 may be formed on the bottom surface of chamber 100. Vent 102 may be connected to vent line 151. Reaction byproducts generated during the process and residual gases in the internal space of the chamber may be discharged to the outside via vent line 151. The interior of chamber 100 may be depressurized to a predetermined pressure through the venting process.

[0144] According to the embodiment, the liner 130 may be disposed inside the chamber 100. The liner 130 may have a cylindrical shape with an open top surface and an open top surface. The liner 130 may be configured to contact the inner surface of the chamber 100. The liner 130 may protect the inner wall of the chamber 100 from damage by arc discharge. In addition, it may prevent impurities generated during the substrate processing from depositing on the inner wall of the chamber 100.

[0145] The substrate support unit 200 may be positioned inside the chamber 100. The substrate support unit 200 may support the substrate S. The substrate support unit 200 may include an electrostatic chuck 210, which uses electrostatic force to hold the substrate S. Alternatively, the substrate support unit 200 may support the substrate S in various ways, such as mechanical clamping. The substrate support unit 200 including the electrostatic chuck 210 will be described below.

[0146] The substrate support unit 200 may include an electrostatic chuck 210, a bottom cover 250, and a plate 270. The substrate support unit 200 may be positioned inside the cavity 100 and spaced upward from the bottom surface of the cavity 100.

[0147] The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and an annular member 240. The electrostatic chuck 210 may support a substrate S. The dielectric plate 220 may be positioned at the top of the electrostatic chuck 210. The dielectric plate 220 may be configured as a disk-shaped dielectric. The substrate S may be disposed on the top surface of the dielectric plate 220. The top surface of the dielectric plate 220 may have a radius smaller than the radius of the substrate S. Therefore, the edge region of the substrate S may be located outside the dielectric plate 220.

[0148] The dielectric plate 220 may include a first electrode 223, a heater 225, and a first supply fluid channel 221. The first supply fluid channel 221 may be provided from the top surface to the bottom surface of the dielectric plate 220. A plurality of first supply fluid channels 221 are formed to be spaced apart from each other and may be configured as pathways through which the heat transfer medium is supplied to the bottom surface of the substrate S.

[0149] The first electrode 223 may be electrically connected to a first power supply 223a. The first power supply 223a may include DC power.

[0150] A switch 223b may be installed between the first electrode 223 and the first power supply 223a. The first electrode 223 can be electrically connected to the first power supply 223a by turning the switch 223b on / off. When the switch 223b is open, a DC current can be applied to the first electrode 223. Electrostatic force is applied between the first electrode 223 and the substrate S by the current applied to the first electrode 223, and the substrate S can be attracted to the dielectric plate 220 by the electrostatic force. A heater 225 may be located below the first electrode 223. The heater 225 may be electrically connected to the second power supply 225a. The heater 225 can generate heat by resisting the current applied from the second power supply 225a. The generated heat can be transferred to the substrate S via the dielectric plate 220. The substrate S can be kept at a predetermined temperature by the heat generated by the heater 225. The heater 225 may include a spiral coil. The heater 225 may be provided in the form of a heating unit.

[0151] The body 230 can be positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 can be connected by an adhesive 236. The body 230 can be made of aluminum. The top surface of the body 230 can be positioned such that the central region is higher than the edge region. The central region of the top surface of the body 230 has a region corresponding to the bottom surface of the dielectric plate 220 and can be adhered to the bottom surface of the dielectric plate 220. The body 230 may have a first circulating fluid channel 231, a second circulating fluid channel 232, and a second supply fluid channel 233 formed therein.

[0152] The first circulating fluid channel 231 may be configured as a channel through which the heat transfer medium circulates. The first circulating fluid channel 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulating fluid channel 231 may be arranged such that annular channels with different radii have the same center. Each of the first circulating fluid channels 231 may be interconnected. The first circulating fluid channels 231 may be formed at the same height.

[0153] The second circulating fluid channel 232 can be configured as a channel through which cooling fluid circulates. The second circulating fluid channel 232 can be formed in a spiral shape inside the main body 230. Alternatively, the second circulating fluid channel 232 can be arranged such that annular channels with different radii have a common center. Each of the second circulating fluid channels 232 can communicate with each other. The second circulating fluid channel 232 can have a larger cross-sectional area than the first circulating fluid channel 231. The second circulating fluid channels 232 can be formed at the same height. The second circulating fluid channel 232 can be located below the first circulating fluid channel 231.

[0154] The second supply fluid channel 233 may extend upward from the first circulation fluid channel 231 and may be disposed on the top surface of the main body 230. The number of second supply fluid channels 233 may correspond to the number of first supply fluid channels 221, and the first circulation fluid channel 231 may be connected to the first supply fluid channel 221.

[0155] The first circulating fluid channel 231 can be connected to the heat transfer medium storage unit 231a via the heat transfer medium supply line 231b. The heat transfer medium can be stored in the heat transfer medium storage unit 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He). Helium can be supplied to the first circulating fluid channel 231 via the heat transfer medium supply line 231b, and can be supplied to the bottom surface of the substrate S sequentially via the second supply fluid channel 233 and the first supply fluid channel 221. Helium can be used as the medium through which heat is transferred from plasma to the substrate S and then to the electrostatic chuck 210.

[0156] The second circulating fluid channel 232 can be connected to the cooling fluid storage unit 232a via the cooling fluid supply line 232c. Cooling fluid can be stored in the cooling fluid storage unit 232a. A cooler 232b can be disposed within the cooling fluid storage unit 232a. The cooler 232b can cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b can be installed at the cooling fluid supply line 232c. The cooling fluid supplied to the second circulating fluid channel 232 via the cooling fluid supply line 232c can circulate along the second circulating fluid channel 232 to cool the main body 230. The main body 230 can cool the dielectric plate 220 and the substrate S together to maintain the substrate S at a predetermined temperature.

[0157] The main body 230 may include a metal plate. In some embodiments, the entire main body 230 may be made of metal plates.

[0158] An annular member 240 may be disposed in the edge region of the electrostatic chuck 210. The annular member 240 may have an annular shape and may be disposed along the periphery of the dielectric plate 220. The annular member 240 may be formed of a plurality of rings including a focusing ring. The top surface of the annular member 240 may be positioned such that the outer portion 240a is higher than the inner portion 240b. The inner portion 240b of the top surface of the annular member 240 may be positioned at the same height as the top surface of the dielectric plate 220. The inner portion 240b of the top surface of the annular member 240 may support the edge region of the substrate S located outside the dielectric plate 220.

[0159] The outer portion 240a of the annular member 240 can be configured to surround the edge region of the substrate S. The annular member 240 can control the electromagnetic field so that the plasma density is uniformly distributed throughout the entire region of the substrate S. Therefore, the plasma is uniformly formed over the entire region of the substrate S, allowing for uniform etching of each region of the substrate S.

[0160] The bottom cover 250 may be located at the bottom end of the substrate support unit 200. The bottom cover 250 may be positioned upwardly spaced from the bottom surface of the chamber 100. The bottom cover 250 may have a space 255 in which an open top surface is formed.

[0161] The outer diameter of the bottom cover 250 may have the same length as the outer diameter of the main body 230. Within the internal space 255 of the bottom cover 250, a lifting pin module (not shown) or similar device may be positioned to move the returned substrate S from the external transfer member to the electrostatic chuck 210. The lifting pin module (not shown) may be spaced a predetermined distance from the bottom cover 250. The bottom surface of the bottom cover 250 may be made of a metallic material. Air may be provided within the internal space 255 of the bottom cover 250. Since air has a lower dielectric constant than that of an insulator, it can be used to reduce the electromagnetic field inside the substrate support unit 200.

[0162] The bottom cover 250 may have connecting members 253. The connecting members 253 connect the outer surface of the bottom cover 250 to the inner wall of the chamber 100. Multiple connecting members 253 may be arranged at regular intervals on the outer surface of the bottom cover 250. The connecting members 253 may support the substrate support unit 200 inside the chamber 100. Furthermore, the connecting members 253 may be connected to the inner wall of the chamber 100, thereby electrically grounding the bottom cover 250. A first power line 223c connected to a first power source 223a, a second power line 225c connected to a second power source 225a, a third power line 235c connected to a third power source 235a, and a heat transfer medium supply line 231b connected to a heat transfer medium storage unit 231a, etc., may extend into the bottom cover 250 through the internal space 255 of the connecting lines.

[0163] Plate 270 may be positioned between electrostatic chuck 210 and bottom cover 250. Plate 270 may cover the top surface of bottom cover 250. Plate 270 may have a cross-sectional area corresponding to body 230. Plate 270 may include an insulator. According to embodiments, one or more plates 270 may be provided. Plate 270 may be used to increase the electrical distance between body 230 and bottom cover 250.

[0164] The substrate support unit 200 according to the present invention may further include a control board 290, a connecting board 280, and a connecting electrode unit 227.

[0165] The control board 290 according to the present invention can control a first switching device S1, a second switching device S2, a third switching device S3, and a fourth switching device S4 connected to a heating unit having a matrix configuration included in a substrate support unit 200 according to the present invention. According to an embodiment, the control board 290 according to the present invention includes a controller 228. The control board 290 can generate and apply control signals to control the first switching device S1, the second switching device S2, the third switching device S3, and the fourth switching device S4 connected to the heating unit having a matrix configuration included in the support unit according to the present invention. The control signals can be digital signals, such as on / off signals. The control board 290 can be implemented as a computer or a similar device using hardware, software, or a combination thereof.

[0166] In the hardware, the control board 290 may implement an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field-programmable gate array (FPGA), a processor, a microcontroller, a microprocessor, or an electronic device that performs similar control functions.

[0167] In the software, the control board 290 can be implemented as software code or a software application in one or more programming languages. The software can be executed by a hardware-implemented controller. Furthermore, the software can be transferred from an external device, such as a server, to the aforementioned software configuration and installation.

[0168] According to the embodiment, the connecting plate 280 can be disposed between the heater 225 and the control plate 290. According to the embodiment, the connecting electrode unit 227 can electrically connect the heater 225, the control plate 290, and the connecting plate 280. The connecting electrode unit 227 may include a first power line and a second power line.

[0169] The plasma generation unit 300 can excite the process gas in the chamber 100 in a plasma state. The plasma generation unit 300 can use a capacitively coupled plasma (CCP) type plasma source. When using a CCP type plasma source, the chamber 100 may include a top electrode 330 and a bottom electrode 230 (i.e., the body). The top electrode 330 and the bottom electrode 230 can be vertically arranged parallel to each other, with a processing space inserted between them. The top electrode 330 and the bottom electrode 230 can receive energy for plasma generation by receiving RF signals from the RF power supply 310, and the number of RF signals applied to each electrode is not limited to the one shown in the figure. An electric field is formed in the space between the two electrodes, and the process gas supplied to this space can be excited to a plasma state. The substrate processing process is performed using this plasma. Although described as a capacitively coupled plasma (CCP) type as described in this specification, the inventive concept is not limited thereto, and the plasma generation unit 300 may be configured as an inductively coupled plasma (ICP) type.

[0170] The plasma generation unit 300 may be provided with a gas dispersion plate. Although not shown in the figures, the gas dispersion plate may be positioned at a predetermined distance from the top surface of the chamber 100. The gas dispersion plate may be fixed by a support portion formed on the top edge of the chamber 100. The gas dispersion plate may be configured as a plate with a constant thickness. The bottom surface of the gas dispersion plate may be anodized to prevent arcing due to plasma. The cross-sectional area of ​​the gas dispersion plate may be set to be equal to the cross-sectional area of ​​the substrate support unit 200. The gas dispersion plate includes a plurality of injection holes. The injection holes may penetrate the top and bottom surfaces of the gas dispersion plate in a vertical direction. The gas dispersion plate 310 may include a metallic material. The gas dispersion plate 310 may serve as a top electrode.

[0171] A gas supply unit 400 supplies process gas to chamber 100. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be disposed at the center of the top surface of chamber 100. An injection orifice may be formed on the bottom surface of the gas supply nozzle 410. The injection orifice supplies process gas to chamber 100. The gas supply line 420 connects the gas supply nozzle 410 and the gas storage unit 430. The gas supply line 420 supplies process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 may be disposed at the gas supply line 420. The valve 421 can open and close the gas supply line 420 and control the flow rate of the process gas supplied via the gas supply line 420.

[0172] The exhaust unit 500 can be positioned between the inner wall of the chamber 100 and the substrate support unit 200. The baffle 510 can be arranged in an annular shape. A plurality of through holes 511 can be formed at the baffle 510. The process gas supplied in the chamber 100 can pass through the through holes 511 of the baffle 510 and can be discharged through the exhaust port 102. The flow of the process gas can be controlled according to the form of the baffle 510 and the form of the through holes.

[0173] Figure 5 The substrate processing apparatus shown is merely an example, and the substrate processing apparatus may include multiple process chambers. For example, these multiple process chambers may include etching chambers, deposition chambers, sputtering chambers, coating chambers, exposure chambers, developing chambers, cleaning chambers, drying chambers, and the like, in which various processes can be performed to manufacture integrated circuit devices, including semiconductor devices and flat panel display devices. The desired processes, including deposition processes, sputtering processes, etching processes, coating processes, exposure processes, developing processes, cleaning processes, drying processes, and the like, can be performed within the process chambers. A support unit for placing the substrate may be disposed within the process chambers, and the support unit may include a support plate capable of supporting the substrate and a heating unit capable of heating the substrate when the desired processes are performed on it.

[0174] The heating unit may have, as referenced Figure 2 The matrix configuration for heating the substrate. In other words, to provide multiple heating areas for heating the substrate, the heating unit may include multiple heaters, multiple diodes connectable to the multiple heaters, a controller including multiple switches to control the multiple heaters, and a wiring harness connecting the multiple heaters and the multiple diodes to the controller. Here, the heating unit may have the following configuration: multiple adjacent diodes may be arranged in opposite directions, and the current supplied to the multiple heaters via additional switches may flow in both forward and reverse directions, thereby reducing the number of control lines for the heating unit. Therefore, the structural complexity of the substrate processing equipment including the heating unit can be prevented.

[0175] Figure 6 A plan view of a substrate processing apparatus to which the heating unit is applied is shown as an example of another embodiment of the concept according to the present invention.

[0176] refer to Figure 6 The plurality of heaters included in the heating unit may include a first heater 2251 for heating the edge of the substrate. According to an embodiment, the first heater 2251 for heating the edge of the substrate may be a heater for precise control.

[0177] according to Figure 6 One embodiment includes multiple heaters in the heating unit, which may include a first heater 2251 for heating the edge of the substrate and a second heater 2252 for heating the central portion of the substrate. According to one embodiment, the first heater 2251 for heating the edge of the substrate may be a heater for precise control, and the second heater 2252 for heating the central portion of the substrate may be a heater for coarse control. According to one embodiment, after overall temperature control is performed using the second heater 2252, precise control of individual areas can be performed using the first heater 2251.

[0178] according to Figures 5 to 6 In one embodiment, the first power line may be embedded in the connecting plate 280. In another embodiment of the invention, the first power line may be embedded in a dielectric plate 220 including a heating unit, and may be embedded and disposed on a plane such as the heating unit.

[0179] The above embodiments are provided to aid in understanding the inventive concept, and the scope of the inventive concept is not limited. It should be understood that various modified embodiments also fall within the scope of the inventive concept. The drawings provided in this invention are merely illustrative examples of the best embodiments of the inventive concept. The technical protection scope of this inventive concept should be determined by the technical idea of ​​the claims, and it should be understood that the technical protection scope of this inventive concept is not limited to the textual description of the claims themselves, but is substantially equivalent.

Claims

1. A support unit for supporting a substrate, the support unit comprising: a heating unit for heating the substrate, The heating unit includes: Multiple heating elements; and A plurality of first power lines and a plurality of second power lines provide supply and return paths for power to and from the plurality of heating components. The plurality of second power lines are connected to each of the plurality of first power lines via the plurality of heating elements. At least two of the heating elements are connected to each of the first power lines and at least two of the heating elements are connected to each of the second power lines, and At least two of the heating elements are connected in parallel between each of the first electric line and each of the second electric line; The support unit further includes: a power unit connected to a plurality of first power lines and a plurality of second power lines to supply power to the plurality of heating components, and The power unit includes a power source, which is configured in the same number as the at least two heating elements connected in parallel between each of the first power lines and each of the second power lines.

2. The support unit according to claim 1, wherein L heating elements are connected in parallel between each of the first electric line and each of the second electric lines, N first electric lines are present, and M second electric lines are present, and wherein the total number of the plurality of heating members is N M L.

3. The support unit according to claim 1, wherein the heating component comprises a heating assembly and a diode connected in series. At least two of the diodes are connected in parallel at each of the plurality of first electric field lines and each of the plurality of second electric field lines at the points where they intersect. At least two of the diodes are connected to the corresponding heating components, such that current flows in the opposite direction to each of the first electric field lines and each of the second electric field lines.

4. The support unit according to claim 1, wherein the heating unit further comprises: A first power supply-return selection switch assembly is connected between the power unit and each of the first power lines; and The second power supply-return selection switch assembly is connected between the power unit and each of the second power lines.

5. The support unit according to claim 4, wherein each of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly is provided in the same number as the at least two heating elements connected in parallel between each of the first power lines and each of the second power lines.

6. The support unit according to claim 5, wherein each power source of the power unit is connected between a corresponding first power supply-return selection switch assembly and a corresponding second power supply-return selection switch assembly.

7. The support unit according to claim 4, the support unit further comprising: a controller, the controller being configured to control the on / off state of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly.

8. The support unit according to claim 1 or 2, wherein the at least two heating elements connected in parallel between each of the first electric line and each of the second electric line comprise a first heating element and a second heating element, and The power unit includes a first power source for supplying power to the first heating element and a second power source for supplying power to the second heating element; The heating unit further comprises: A first power supply-return selection switch assembly, comprising a first switch assembly connected between the first power source and each of the first power lines, and a second switch assembly connected between the second power source and each of the first power lines; and The second power supply-return selection switch assembly includes a third switch assembly connected between the first power source and each of the second power lines, and a fourth switch assembly connected between the second power source and each of the second power lines.

9. The support unit according to claim 8, wherein the first heating member and the second heating member each comprise a heating member and a diode connected in series, and The diodes of the first heating element and the second heating element are connected to the corresponding heating elements, such that current flows in the opposite direction to each of the first electric lines that are commonly connected.

10. The support unit according to claim 8, further comprising: a controller, the controller controlling the on / off state of the first power supply-return selection switch assembly and the second power supply-return selection switch assembly.

11. A heating unit, the heating unit comprising: Multiple heating wire assemblies; A plurality of first power lines, wherein the plurality of first power lines are connected to any one of the plurality of heating wire assemblies; A plurality of second power lines, wherein the plurality of second power lines are connected to any one of the plurality of heating wire assemblies; A first power source, configured to supply current to the first power line and to return current to the second power line; and A second power source is configured to supply current to the second power line and to return current to the first power line. The system includes a single heating wire assembly, which is simultaneously connected to any one of the multiple first power lines and any one of the multiple second power lines. The heating wire assembly includes: First heating wire; A second heating wire is connected in parallel to the first heating wire; A first heater, wherein the first heater is disposed at the first heating wire; The second heater is disposed at the second heating wire; A first diode is connected in series with the first heater at the first heating wire; The second diode is connected in series with the second heater at the second heating wire; and A switching unit for controlling the on / off state of the first heater and the second heater included in the heating wire assembly.

12. The heating unit of claim 11, further comprising the first diode and the second diode in the heating wire assembly being connected such that the current flowing in the first heater and the current flowing in the second heater flow in opposite directions to each other.

13. The heating unit according to claim 12, wherein the switching unit comprises: A first power supply-return selection switch assembly, comprising a first switch assembly connected between the first power source and each of the first power lines, and a second switch assembly connected between the second power source and each of the first power lines; and The second power supply-return selection switch assembly includes a third switch assembly connected between the first power source and each of the second power lines, and a fourth switch assembly connected between the second power source and each of the second power lines.

14. The heating unit according to claim 13, further comprising: a controller, the controller being configured to control the switching on / off of the first switching assembly, the second switching assembly, the third switching assembly, and the fourth switching assembly.

15. A substrate processing apparatus, the substrate processing apparatus comprising: A process chamber, wherein the process chamber has a processing space; A support unit, which is positioned within the processing space and supports the substrate; A heating unit, wherein the heating unit is disposed at the support unit and is a heating unit according to any one of claims 11 to 14; A gas supply unit, wherein the gas supply unit is configured to supply gas for processing the substrate to the processing space; and A plasma generating unit, the plasma generating unit being used to generate plasma from the gas.

16. The substrate processing apparatus of claim 15, wherein the support unit further comprises: a connecting plate, the connecting plate being capable of embedding at least one of a plurality of first electric lines and a plurality of second electric lines.

17. The substrate processing apparatus of claim 15, wherein a plurality of the first power lines and a plurality of the second power lines are embedded in the same location as the heating unit.

18. The substrate processing apparatus of claim 15, wherein the plasma generating unit includes a gas dispersion plate, the gas dispersion plate being fixed to the process chamber by the support unit.

19. The substrate processing apparatus of claim 18, wherein the bottom surface of the gas dispersion plate is anodized to prevent arcing due to plasma.

Images