一种门极换流晶闸管GCT器件结构及其制造方法
By optimizing the manufacturing method of gate commutated thyristor (GCT) devices and adopting a pre-drilling and post-diffusion process to form wavy P- and P- regions, the problems of high manufacturing cost and difficult process were solved, achieving efficient and low-cost production and performance improvement.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAN PERI POWER SEMICONDUCTOR CONVERSION TECHNOLOGY CO LTD
- Filing Date
- 2022-10-26
- Publication Date
- 2026-07-17
AI Technical Summary
Existing gate commutated thyristor (GCT) devices suffer from high manufacturing costs and complex processes, especially the complex photolithography and implantation processes for the wavy P-base region structure, which affect on-state and turn-off performance.
By employing a trenching-then-diffusion method, wavy P- and P- regions are formed through the discrete gate-cathode height difference, avoiding additional photolithography and implantation processes, optimizing the gate trench depth, achieving one-time evaporation and reverse etching of aluminum, and reducing process costs and difficulty.
This improved the ability to turn off current, reduced manufacturing costs and process complexity, and ensured efficient production and stable performance of the device.
Smart Images
Figure CN115692489B_ABST