A power supply device for a GaN power amplifier and a communication device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- COMBA TELECOM SYST CHINA LTD
- Filing Date
- 2022-11-04
- Publication Date
- 2026-06-12
Smart Images
Figure CN115694373B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of power amplifier technology, and more particularly to a power supply device and communication equipment for a GaN power amplifier. Background Technology
[0002] In the radio frequency (RF) field, the most commonly used power amplifiers are primarily Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors. LDMOS is based on Si material, and while this type of power amplifier technology is relatively mature, improving efficiency and frequency band is relatively difficult. GaN, a new material, solves this problem. GaN is a third-generation semiconductor material, capable of achieving higher frequencies and efficiencies. This is due to GaN's wideband semiconductor characteristics, high saturated electron mobility, and higher breakdown voltage. Simultaneously, GaN material also possesses high thermal conductivity, allowing GaN power amplifiers to withstand higher temperatures and have higher power capacity.
[0003] Currently, GaN power amplifier power supply timing control employs either multiple power supplies providing voltages separately, with timing control completed on a single board, or a single high-voltage power supply (higher than the drain voltage of the GaN power amplifier) converted to the required voltage by multiple power conversion chips, with timing control then completed on the single board. However, the former requires multiple power supplies, and the latter requires additional power conversion chips, both increasing PCB layout pressure and overall board cost. Furthermore, existing GaN power amplifier power supply timing control only includes gate and drain voltage timing control. During power-up and power-down, the GaN power amplifier is prone to operating in an environment where the drain voltage is too low, the gate voltage remains unchanged, and RF signal input is still present, leading to a decrease in the P-1 parameter and potentially causing the GaN power amplifier to burn out. Therefore, improving the power-up and power-down safety of GaN power amplifiers while using a single power supply and reducing the number of power conversion chips is a problem that needs to be solved in current technology. Summary of the Invention
[0004] To solve or at least partially solve the above-mentioned technical problems, this disclosure provides a power supply device and communication equipment for a GaN power amplifier. Under the condition of using a single power supply and reducing the number of power conversion chips, it realizes complete timing control of the RF small signal voltage, gate voltage (gate voltage), and drain voltage (drain voltage) of the GaN power amplifier, which greatly reduces the complexity of the single-board power supply, alleviates the pressure of PCB layout, reduces the overall board cost, and provides a safety guarantee for the power-on and power-off of the GaN power amplifier.
[0005] This disclosure provides a power supply device for a GaN power amplifier, including a single-channel power supply, a positive-to-negative voltage conversion module, a drain switch control module, a drain switch, a buck module, an RF signal switch control module, and an RF signal switch. The input terminals of the positive-to-negative voltage conversion module, the drain switch, and the buck module are all connected to the single-channel power supply. The output terminal of the positive-to-negative voltage conversion module is simultaneously connected to the input terminal of the drain switch control module and the gate of the GaN power amplifier. The output terminal of the drain switch is simultaneously connected to the input terminal of the RF signal switch control module and the drain of the GaN power amplifier. The control terminal of the drain switch is connected to the output terminal of the drain switch control module. The first output terminal of the buck module is connected to the input terminal of the RF signal switch. The output terminal of the RF signal switch is connected to the gate of the GaN power amplifier. The control terminal of the RF signal switch is connected to the output terminal of the RF signal switch control module.
[0006] In the power supply device for the GaN power amplifier provided in this embodiment, the drain switch control module is configured to control the drain switch to turn on when the gate voltage of the GaN power amplifier is less than a first threshold voltage, so as to provide a drain voltage to the drain of the GaN power amplifier after the single power supply provides a gate power-on voltage to the gate of the GaN power amplifier.
[0007] The radio frequency signal switch control module is configured to control the radio frequency signal switch to turn on when the drain voltage of the GaN power amplifier is greater than the second threshold voltage, so as to provide the radio frequency signal power-on voltage to the gate of the GaN power amplifier after the single power supply provides the drain power-on voltage to the drain of the GaN power amplifier.
[0008] In the power supply device for the GaN power amplifier provided in this embodiment, the second output terminal of the step-down module is connected to the power supply terminal of the drain switch control module, and the drain switch control module is powered through the second output terminal;
[0009] The radio frequency signal switch control module is configured to control the radio frequency signal switch to turn off when the drain voltage of the GaN power amplifier is less than or equal to the second threshold voltage, so as to control the radio frequency signal power-on voltage of the gate of the GaN power amplifier to turn off after the single power supply is powered off.
[0010] The drain switch control module is configured to control the drain switch to turn off when the single power supply drops to less than the third threshold voltage, so as to control the drain power-on voltage of the GaN power amplifier to drop after the RF signal power-on voltage of the gate of the GaN power amplifier is de-energized.
[0011] The positive and negative voltage conversion module is configured to turn off when the single power supply drops to less than the fourth threshold voltage, so as to control the gate voltage of the GaN power amplifier to be de-energized after the drain voltage of the drain of the GaN power amplifier is de-energized.
[0012] Wherein, the third threshold voltage is less than the second threshold voltage, and the fourth threshold voltage is less than the third threshold voltage.
[0013] In the power supply device for the GaN power amplifier provided in this embodiment, the positive-to-negative voltage conversion module includes an inverting switching power supply and a first low-dropout linear regulator. The input terminal of the inverting switching power supply is connected to the single-channel power supply, and the output terminal is connected to the input terminal of the first low-dropout linear regulator. The output terminal of the first low-dropout linear regulator is simultaneously connected to the input terminal of the drain switch control module and the gate of the GaN power amplifier. The operating voltage of the inverting switching power supply is the fourth threshold voltage.
[0014] In the power supply device for the GaN power amplifier provided in this embodiment, the drain switch control module includes a first comparator. The first comparison terminal of the first comparator is connected to the gate of the GaN power amplifier. The second comparison terminal of the first comparator is connected to a first reference voltage. The output terminal of the first comparator is connected to the control terminal of the drain switch. The power supply terminal of the first comparator is connected to the second output terminal of the buck module.
[0015] In the power supply device for the GaN power amplifier provided in this embodiment, the first comparator terminal is connected to the gate of the GaN power amplifier through a voltage divider circuit. The first reference voltage is obtained by dividing the voltage output from the second output terminal of the buck module. The ratio of the gate voltage divided to the gate voltage connected to the first comparator terminal is the same as the ratio of the first reference voltage to the first threshold voltage.
[0016] In the power supply device for the GaN power amplifier provided in this embodiment, the step-down module includes a step-down switching power supply and a second low-dropout linear regulator. The input terminal of the step-down switching power supply is connected to the single-channel power supply, and the output terminal is connected to both the power supply terminal of the drain switch control module and the input terminal of the second low-dropout linear regulator. The output terminal of the second low-dropout linear regulator is connected to the input terminal of the radio frequency signal switch. The operating voltage of the step-down switching power supply is the third threshold voltage.
[0017] In the power supply device for the GaN power amplifier provided in this embodiment, the radio frequency signal switch control module includes a second comparator and an AND gate. One input terminal of the AND gate is connected to the output terminal of the second comparator, and the other input terminal of the AND gate is connected to a radio frequency transmit switch signal. The output terminal of the AND gate is connected to the control terminal of the radio frequency signal switch. The first comparison terminal of the second comparator is connected to the drain of the GaN power amplifier, and the second comparison terminal of the first comparator is connected to a second reference voltage. The radio frequency transmit switch signal indicates whether the GaN power amplifier is working or not.
[0018] In the power supply device for the GaN power amplifier provided in this embodiment, the drain switch and / or the radio frequency signal switch include a P-channel MOSFET.
[0019] This disclosure also provides a communication device, including a power supply device and a GaN power amplifier as described above.
[0020] The technical solution provided in this disclosure has the following advantages compared with the prior art:
[0021] 1. A single power supply is used, and the power supply is directly isolated from the drain of the GaN power amplifier using a drain switch. This allows the single power supply to directly provide the drain voltage of the GaN power amplifier, saving the power conversion chip between the power supply and the drain of the GaN power amplifier. This reduces the complexity of the power supply on the board, alleviates the pressure on PCB layout, and lowers the overall board cost.
[0022] 2. A step-down module, an RF signal switch control module, and an RF signal switch are added. The input of the step-down module is connected to a single power supply, the first output of the step-down module is connected to the input of the RF signal switch, the output of the RF signal switch is connected to the gate of the GaN power amplifier, and the control terminal of the RF signal switch is connected to the output of the RF signal switch control module. Thus, by using the RF signal switch control module to control the on / off state of the RF signal switch, the opening and closing of the RF channel at the gate of the GaN power amplifier can be controlled. This enables timing control of the small-signal RF voltage at the gate of the GaN power amplifier, thereby allowing controllable control of the RF signal input to the GaN power amplifier. This provides safer protection measures for the power-on and power-off of the GaN power amplifier, thus improving its safety. Therefore, the technical solution disclosed herein can simultaneously achieve timing control of the RF small signal voltage, gate voltage (gate voltage), and drain voltage (drain voltage) of the GaN power amplifier under the condition of using a single power supply and reducing the number of power conversion chips. This greatly reduces the complexity of the single-board power supply, alleviates the pressure of PCB layout, reduces the overall board cost, and provides a safety guarantee for the power-on and power-off of the GaN power amplifier. Attached Figure Description
[0023] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.
[0024] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 A structural block diagram of a power supply device for a GaN power amplifier provided in an embodiment of this disclosure;
[0026] Figure 2 A power-on timing control diagram of a power supply device for a GaN power amplifier provided in an embodiment of this disclosure;
[0027] Figure 3 A power-down timing control diagram of a power supply device for a GaN power amplifier provided in an embodiment of this disclosure;
[0028] Figure 4 This is a schematic diagram of the specific structure of a power supply device for a GaN power amplifier provided in an embodiment of this disclosure. Detailed Implementation
[0029] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.
[0030] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.
[0031] Figure 1 This is a structural block diagram of a power supply device for a GaN power amplifier provided in an embodiment of this disclosure. This power supply device for the GaN power amplifier can be applied to the power supply systems of communication equipment such as Remote Radio Units (RRUs) and Distributed Antenna Systems (DAS). Specifically, as... Figure 1As shown, the power supply device of the GaN power amplifier includes a single power supply, a positive-to-negative voltage conversion module, a drain switch control module, a drain switch, a buck module, an RF signal switch control module, and an RF signal switch. The input terminals of the positive-to-negative voltage conversion module, the drain switch, and the buck module are all connected to the single power supply. The output terminal of the positive-to-negative voltage conversion module is simultaneously connected to the input terminal of the drain switch control module and the gate of the GaN power amplifier. The output terminal of the drain switch is simultaneously connected to the input terminal of the RF signal switch control module and the drain of the GaN power amplifier. The control terminal of the drain switch is connected to the output terminal of the drain switch control module. The first output terminal of the buck module is connected to the input terminal of the RF signal switch. The output terminal of the RF signal switch is connected to the gate of the GaN power amplifier. The control terminal of the RF signal switch is connected to the output terminal of the RF signal switch control module.
[0032] Specifically, the output voltage of a single power supply is equal to the drain voltage of the GaN power amplifier; the positive-to-negative voltage conversion module converts the positive voltage output by the single power supply into a negative voltage and provides the gate voltage for the GaN power amplifier; the drain switch control module controls the on and off of the drain switch; the step-down module steps down the output voltage of the single power supply and outputs a small radio frequency signal voltage through the first output terminal; and the radio frequency signal switch control module controls the on and off of the radio frequency signal switch.
[0033] In the power supply device of the aforementioned GaN power amplifier, a single power supply can be obtained from a DC power supply box or an external AC / DC power converter, improving power supply flexibility. The single power supply is isolated from the drain of the GaN power amplifier only by a drain switch. Simultaneously, the output voltage of the single power supply (referring to the final stable voltage of the single power supply) is set equal to the drain voltage of the GaN power amplifier. Therefore, when the drain switch control module controls the drain switch to conduct, the drain voltage of the GaN power amplifier can be applied, saving a power conversion chip, reducing overall board cost, and saving PCB layout space. Since the gate voltage of the GaN power amplifier is negative, a positive-to-negative voltage conversion module can be directly set to convert the positive voltage output from the single power supply into the negative voltage required for the gate voltage of the GaN power amplifier, i.e., the gate voltage.
[0034] The power supply device for the GaN power amplifier provided in this embodiment uses a single power supply, and the single power supply is directly isolated from the drain of the GaN power amplifier using a drain switch. This allows the single power supply to directly provide the drain voltage of the GaN power amplifier, saving the need for a power conversion chip between the power supply and the drain of the GaN power amplifier. This reduces the complexity of the power supply board, alleviates the pressure on PCB layout, and lowers the overall board cost. Simultaneously, a buck converter module, an RF signal switch control module, and an RF signal switch are added. The input terminal of the buck converter module is connected to the single power supply, the first output terminal of the buck converter module is connected to the input terminal of the RF signal switch, the output terminal of the RF signal switch is connected to the gate of the GaN power amplifier, and the control terminal of the RF signal switch is connected to the output terminal of the RF signal switch control module. Thus, by using the RF signal switch control module to control the on and off of the RF signal switch, the opening and closing of the RF channel at the gate of the GaN power amplifier can be controlled. This enables timing control of the RF small-signal voltage at the gate of the GaN power amplifier, thereby allowing controllable control of the RF signal input to the GaN power amplifier. This provides safer protection measures for the power-on and power-off of the GaN power amplifier, improving its safety. Therefore, the technical solution disclosed in this paper can simultaneously achieve timing control of the RF small-signal voltage, gate voltage (gate voltage), and drain voltage (drain voltage) of the GaN power amplifier using a single power supply and reducing the number of power conversion chips. This greatly reduces the complexity of the power supply board, alleviates the pressure on PCB layout, lowers the overall board cost, and provides a safety guarantee for the power-on and power-off of the GaN power amplifier.
[0035] In one embodiment of this disclosure, the power supply device for the GaN power amplifier described above can sequentially power on the gate voltage, drain voltage, and RF small-signal voltage of the GaN power amplifier. Specifically, the drain switch control module is configured to control the drain switch to conduct when the gate voltage of the GaN power amplifier is less than a first threshold voltage, so that after the single power supply provides the gate power-on voltage to the gate of the GaN power amplifier (i.e., gate voltage power-on of the GaN power amplifier), it provides the drain power-on voltage to the drain of the GaN power amplifier (i.e., drain voltage power-on of the GaN power amplifier); the RF signal switch control module is configured to control the RF signal switch to conduct when the drain voltage of the GaN power amplifier is greater than a second threshold voltage, so that after the single power supply provides the drain power-on voltage to the drain of the GaN power amplifier, it provides the RF signal power-on voltage to the gate of the GaN power amplifier (i.e., RF small-signal voltage power-on of the GaN power amplifier). The first threshold voltage is greater than the gate voltage and serves as a standard for determining whether the gate voltage of the GaN power amplifier is powered on. The first threshold voltage can be a voltage value close to the gate voltage. The second threshold voltage is less than the drain voltage and serves as a standard for determining whether the drain voltage of the GaN power amplifier is powered on. The second threshold voltage can be a voltage value close to the drain voltage.
[0036] In the above embodiments, since the gate voltage needs to be powered on first, there is no need to control the gate voltage power supply circuit. As a result, the positive and negative voltage conversion module is uncontrolled. As long as the voltage output by the single power supply reaches the working voltage of the positive and negative voltage conversion module, the gate voltage of the GaN power amplifier can be powered on (when the single power supply starts to supply power, the voltage output by the single power supply rises rapidly from 0V to the drain voltage).
[0037] Furthermore, the first threshold voltage is greater than the gate voltage (which is negative) and serves as a standard for determining whether the GaN power amplifier's gate voltage is powered on. Therefore, the drain switch control module can monitor whether the GaN power amplifier's gate voltage is powered on. Specifically, the drain switch control module acquires the GaN power amplifier's gate voltage in real time and compares it with the first threshold voltage. When the gate voltage is greater than or equal to the first threshold voltage, it indicates that the gate voltage is not powered on, and the drain switch is turned off to prevent the drain voltage from powering on before the gate voltage is powered on. When the gate voltage is less than the first threshold voltage, it indicates that the gate voltage is powered on, and the drain switch is turned on, allowing the drain voltage to power on after the gate voltage is powered on, thus protecting the GaN power amplifier. Similarly, the second threshold voltage is less than the drain voltage and serves as a standard for determining whether the GaN power amplifier's drain voltage is powered on, ensuring that the RF small signal voltage is powered on after the gate and drain voltages are powered on. This prevents RF signals from being input to the GaN power amplifier before the gate and drain voltages are powered on, effectively preventing the GaN power amplifier from burning out and further ensuring its safety. Understandably, the first threshold voltage is a value close to the gate voltage to ensure that the drain voltage is powered on after the gate voltage is powered on. Similarly, the second threshold voltage is a value close to the drain voltage to ensure that the RF small signal voltage is powered on after the drain voltage is powered on.
[0038] Based on the above technical solution, in a specific example... Figure 2 A power-on timing control diagram of a GaN power amplifier power supply device is shown (all power supplies are initially processed by voltage changes). Reference Figure 2The single-channel power supply output voltage is 48V. The gate voltage of the GaN power amplifier (gate voltage shown in the figure) is -8V, the drain voltage of the GaN power amplifier (drain voltage shown in the figure) is 48V, the RF small signal voltage is 5V, and the operating voltage of the positive-to-negative voltage conversion module is 30V (in this embodiment, it only needs to be less than 48V). The first threshold voltage is -7V, and the second threshold voltage is 45V. When the single-channel power supply starts supplying power, the output voltage rises from 0V to 48V. During the voltage rise, when the voltage reaches 30V, the positive-to-negative voltage conversion module starts working, converting the voltage output by the single-channel power supply into a voltage of -8V, which powers on the gate voltage of the GaN power amplifier. At this time, the drain switch control module detects that the gate voltage -8V is less than the first threshold voltage of -7V, and controls the drain switch to turn on. The voltage output by the single-channel power supply is directly transmitted to the drain of the GaN power amplifier through the drain switch, realizing a drain voltage of 48V. Subsequently, the RF signal switch control module detects that the drain voltage of 48V is greater than the second threshold voltage of 45V, and controls the RF signal switch to turn on. The voltage output from the single power supply is then stepped down to a 5V RF small signal voltage by the buck module. This 5V RF small signal voltage is then output to the gate of the GaN power amplifier via the RF signal switch, thus powering on the RF small signal voltage. Simultaneously, the GaN power amplifier amplifies and outputs the RF small signal voltage. Therefore, using the power supply device for the GaN power amplifier disclosed herein, as long as a single power supply provides the output voltage, the gate voltage, drain voltage, and RF small signal voltage can be sequentially powered on, improving the safety of the GaN power amplifier operation.
[0039] In another embodiment of this disclosure, the power supply device of the GaN power amplifier described above can be used to sequentially power down the GaN power amplifier's RF small signal voltage, drain voltage, and gate voltage. Specifically, the second output terminal of the buck module is connected to the power supply terminal of the drain switch control module, and supplies power to the drain switch control module through the second output terminal; the RF signal switch control module is configured to control the RF signal switch to turn off when the drain voltage of the GaN power amplifier is less than or equal to the second threshold voltage, so as to control the RF signal power-on voltage of the gate of the GaN power amplifier to turn off after a single power supply fails; the drain switch control module is configured to control the drain switch to turn off when a single power supply fails to a value less than the third threshold voltage, so as to control the drain power-on voltage of the drain of the GaN power amplifier to turn off after the RF signal power-on voltage of the gate of the GaN power amplifier has turned off; the positive and negative voltage conversion module is configured to turn off when a single power supply fails to a value less than the fourth threshold voltage, so as to control the gate power-on voltage of the gate of the GaN power amplifier to turn off after the drain power-on voltage of the drain of the GaN power amplifier has turned off; wherein, the third threshold voltage is less than the second threshold voltage, and the fourth threshold voltage is less than the third threshold voltage.
[0040] In this embodiment, when the GaN power amplifier is powered on, the voltage output from the single power supply gradually decreases to 0. During the voltage drop, when the voltage drops to the second threshold voltage, the RF signal switch control module detects that the drain voltage equals the second threshold voltage. At this time, it controls the RF signal switch to turn off, causing the RF signal voltage on the gate of the GaN power amplifier to drop (i.e., the RF small signal voltage drops). When the voltage continues to drop below the third threshold voltage, the buck module stops working, thereby stopping the power supply to the drain switch control module. The drain switch control module shuts down the drain switch due to the power supply abnormality, causing the drain voltage on the drain of the GaN power amplifier to drop (i.e., the drain voltage drops). Finally, when the voltage continues to drop below the fourth threshold voltage, the positive / negative voltage conversion module malfunctions due to undervoltage protection, causing the gate voltage on the gate of the GaN power amplifier to drop (i.e., the gate voltage drops).
[0041] For example, Figure 3 A power-down timing control diagram of a power supply device for a GaN power amplifier is shown. (Reference) Figure 3 The single-channel power supply output voltage is 48V. The gate voltage of the GaN power amplifier (gate voltage shown in the figure) is -8V, the drain voltage of the GaN power amplifier (drain voltage shown in the figure) is 48V, the RF small signal voltage is 5V, the fourth threshold voltage is 30V, the third threshold voltage is 36V, the second threshold voltage is 45V, and the voltage at the second output terminal of the buck module is 5.4V. When the single-channel power supply fails, the output voltage drops from 48V to 0V. During the voltage drop, when the voltage drops to 45V, the RF signal switch control module detects that the drain voltage of 45V is equal to the second threshold voltage of 45V. At this time, it controls the RF signal switch to turn off, causing the RF small signal voltage of 5V to drop. When the voltage continues to drop to below the second operating voltage of 36V, the buck module stops working, thereby stopping the power supply to the drain switch control module. The 5.4V power supply voltage drops, and the drain switch control module shuts down the drain switch due to the abnormal power supply, causing the drain voltage of 48V to drop. Finally, when the voltage continues to drop below the first operating voltage of 30V, the positive-to-negative voltage conversion module malfunctions due to undervoltage protection, and the gate voltage drops to -8V. Thus, using the power supply device of the GaN power amplifier in this embodiment, as long as a single power supply fails, the RF small signal voltage, drain voltage, and gate voltage can be sequentially reduced, improving the safety of the GaN power amplifier operation.
[0042] In the power supply device for the GaN power amplifier provided in the embodiments of this disclosure, such as Figure 4As shown, the positive / negative voltage conversion module includes an inverting switching power supply DC / DC1 and a first low-dropout linear regulator LDO1. The input of the inverting switching power supply DC / DC1 is connected to the single-channel power supply, and its output is connected to the input of the first low-dropout linear regulator LDO1. The output of the first low-dropout linear regulator LDO1 is simultaneously connected to the input of the drain switching control module (hereinafter referred to as the first comparator) and the gate of the GaN power amplifier. The operating voltage of the inverting switching power supply DC / DC1 is the aforementioned fourth threshold voltage. Specifically, during the power-on process of the GaN power amplifier, when the voltage output from the single-channel power supply reaches the operating voltage of the inverting switching power supply DC / DC1, the inverting switching power supply DC / DC1 converts the voltage output from the single-channel power supply to -9V. After being regulated by the first low-dropout linear regulator LDO1, it outputs a gate voltage of -8V, and the gate voltage is powered on. During the power-off process of the GaN power amplifier, when the voltage after the single-channel power supply is de-energized is lower than the operating voltage of the inverting switching power supply DC / DC1, the inverting switching power supply DC / DC1 stops working, and the gate voltage is de-energized.
[0043] In the power supply device for the GaN power amplifier provided in the embodiments of this disclosure, see [link to relevant documentation]. Figure 4 The drain switch control module includes a first comparator. The first comparison terminal of the first comparator is connected to the gate of the GaN power amplifier, the second comparison terminal of the first comparator is connected to a first reference voltage, the output terminal of the first comparator is connected to the control terminal of the drain switch, and the power supply terminal of the first comparator is connected to the second output terminal of the buck module. In this scheme, the first comparator is a voltage comparator. During the power-up process of the GaN power amplifier, when the gate voltage is less than the first reference voltage, the first comparator outputs a high level, controlling the drain switch to conduct, and the drain voltage of 48V is powered on; when the gate voltage is greater than or equal to the first reference voltage, the first comparator outputs a low level, controlling the drain switch to turn off, and the drain voltage is not powered on. During the power-down process of the GaN power amplifier, when the voltage after the single-channel power supply fails is less than the operating voltage (i.e., the second operating voltage) of the buck module, the buck module stops supplying power to the first comparator. Due to the abnormal power supply, the high level output of the first comparator changes to a low level, disabling the control of the drain switch, and the drain voltage of 48V is powered off.
[0044] In the power supply device of the aforementioned GaN power amplifier, the first comparator's first comparison terminal is connected to the gate of the GaN power amplifier via a voltage divider circuit. The first reference voltage is obtained by dividing the voltage output from the second output terminal of the buck module. The ratio of the divided gate voltage to the gate voltage connected to the first comparison terminal of the first comparator is the same as the ratio of the first reference voltage to the first threshold voltage. Considering that directly inputting the gate voltage to the first comparator might burn it out due to excessive voltage, the gate voltage is divided before being output to the first comparator. Correspondingly, the first reference voltage is obtained by dividing the voltage output from the second output terminal of the buck module, achieving a proportional reduction between the gate voltage and the first reference voltage, thus preventing the first comparator from burning out.
[0045] In the power supply device for the GaN power amplifier provided in the embodiments of this disclosure, see also... Figure 4 The step-down module includes a step-down switching power supply DC / DC2 and a second low-dropout linear regulator LDO2. The input of the step-down switching power supply DC / DC2 is connected to a single power supply, and the output is connected to both the power supply terminal of the drain switch control module (first comparator) and the input terminal of the second low-dropout linear regulator LDO2. The output terminal of the second low-dropout linear regulator LDO2 is connected to the input terminal of the radio frequency signal switch. The operating voltage of the step-down switching power supply DC / DC2 is the aforementioned third threshold voltage. During the power-up process of the GaN power amplifier, when the voltage output from the single power supply reaches the operating voltage of the buck switching power supply DC / DC2, the buck switching power supply DC / DC2 converts the voltage output from the single power supply to 5.4V, outputting it to the second low-dropout linear regulator LDO2 and powering the drain switch control module. After being regulated by the second low-dropout linear regulator LDO2, the 5.4V outputs a small-signal RF voltage of 5V. Subsequently, when the RF signal switch control module controls the RF signal switch to turn on, the 5V RF small-signal voltage is transmitted to the gate of the GaN power amplifier via the RF signal switch, and the 5V RF small-signal voltage is powered on. During the power-down process of the GaN power amplifier, when the voltage after the single power supply is de-energized equals the second threshold voltage of the RF signal switch control module, the RF signal switch control module controls the RF signal switch to turn off, and the RF small-signal voltage is powered off.
[0046] In the power supply device for the GaN power amplifier provided in the embodiments of this disclosure, reference continues... Figure 4The RF signal switch control module includes a second comparator and an AND gate. One input of the AND gate is connected to the output of the second comparator, and the other input is connected to the RF transmit switch signal. The output of the AND gate is connected to the control terminal of the RF signal switch. The first comparison terminal of the second comparator is connected to the drain of the GaN power amplifier, and the second comparison terminal of the first comparator is connected to a second reference voltage. The RF transmit switch signal indicates whether the GaN power amplifier is operating. The RF transmit switch signal can be controlled by software. When the GaN power amplifier is transmitting a signal, the RF transmit switch signal is controlled to be high; when the GaN power amplifier is not transmitting a signal, the RF transmit switch signal is controlled to be low. This embodiment is mainly applied to the case where the GaN power amplifier is transmitting a signal, i.e., the RF transmit switch signal is high. In this case, the AND gate can output high and low levels based on the high and low levels of the second comparator output, thereby controlling the on / off state of the RF signal switch. Similar to the first comparator, to avoid burning out the second comparator due to excessive input voltage, the drain voltage is divided and output to the second comparator. Correspondingly, the second reference voltage is obtained by voltage division of the voltage output from the second output terminal of the buck module, so that the drain voltage and the second reference voltage are reduced proportionally. That is, the ratio of the drain voltage divided by the drain voltage connected to the first comparison terminal of the second comparator to the drain voltage is the same as the ratio of the second reference voltage to the second threshold voltage.
[0047] In the power supply device for the GaN power amplifier provided in this disclosure, the drain switch and / or RF signal switch include a P-channel MOSFET. In one example, both the drain switch and the RF signal switch include a P-channel MOSFET.
[0048] Based on the above embodiments, this disclosure also provides a communication device, which includes a power supply device for a GaN power amplifier and a GaN power amplifier provided in any embodiment of this disclosure.
[0049] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0050] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A power supply device for a GaN power amplifier, characterized in that, The system includes a single-channel power supply, a positive / negative voltage conversion module, a drain switch control module, a drain switch, a buck module, an RF signal switch control module, and an RF signal switch. The input terminals of the positive / negative voltage conversion module, the drain switch, and the buck module are all connected to the single-channel power supply. The output terminal of the positive / negative voltage conversion module is simultaneously connected to the input terminal of the drain switch control module and the gate of the GaN power amplifier. The output terminal of the drain switch is simultaneously connected to the input terminal of the RF signal switch control module and the drain of the GaN power amplifier. The control terminal of the drain switch is connected to the output terminal of the drain switch control module. The first output terminal of the buck module is connected to the input terminal of the RF signal switch. The output terminal of the RF signal switch is connected to the gate of the GaN power amplifier. The control terminal of the RF signal switch is connected to the output terminal of the RF signal switch control module.
2. The power supply device for the GaN power amplifier according to claim 1, characterized in that, The drain switch control module is configured to control the drain switch to turn on when the gate voltage of the GaN power amplifier is less than a first threshold voltage, so as to provide a drain voltage to the drain of the GaN power amplifier after the single power supply provides a gate power-on voltage to the gate of the GaN power amplifier. The radio frequency signal switch control module is configured to control the radio frequency signal switch to turn on when the drain voltage of the GaN power amplifier is greater than the second threshold voltage, so as to provide the radio frequency signal power-on voltage to the gate of the GaN power amplifier after the single power supply provides the drain power-on voltage to the drain of the GaN power amplifier.
3. The power supply device for the GaN power amplifier according to claim 1, characterized in that, The second output terminal of the step-down module is connected to the power supply terminal of the drain switch control module, and the drain switch control module is powered through the second output terminal; The radio frequency signal switch control module is configured to control the radio frequency signal switch to turn off when the drain voltage of the GaN power amplifier is less than or equal to the second threshold voltage, so as to control the radio frequency signal power-on voltage of the gate of the GaN power amplifier to turn off after the single power supply is powered off. The drain switch control module is configured to control the drain switch to turn off when the single power supply drops to less than the third threshold voltage, so as to control the drain power-on voltage of the GaN power amplifier to drop after the RF signal power-on voltage of the gate of the GaN power amplifier is de-energized. The positive and negative voltage conversion module is configured to turn off when the single power supply drops to less than the fourth threshold voltage, so as to control the gate voltage of the GaN power amplifier to be de-energized after the drain voltage of the drain of the GaN power amplifier is de-energized. Wherein, the third threshold voltage is less than the second threshold voltage, and the fourth threshold voltage is less than the third threshold voltage.
4. The power supply device for the GaN power amplifier according to claim 3, characterized in that, The positive-to-negative voltage conversion module includes an inverting switching power supply and a first low-dropout linear regulator. The input terminal of the inverting switching power supply is connected to the single-channel power supply, and the output terminal is connected to the input terminal of the first low-dropout linear regulator. The output terminal of the first low-dropout linear regulator is simultaneously connected to the input terminal of the drain switch control module and the gate of the GaN power amplifier. The operating voltage of the inverting switching power supply is the fourth threshold voltage.
5. The power supply device for the GaN power amplifier according to claim 3, characterized in that, The drain switch control module includes a first comparator, the first comparison terminal of the first comparator is connected to the gate of the GaN power amplifier, the second comparison terminal of the first comparator is connected to a first reference voltage, the output terminal of the first comparator is connected to the control terminal of the drain switch, and the power supply terminal of the first comparator is connected to the second output terminal of the buck module.
6. The power supply device for the GaN power amplifier according to claim 5, characterized in that, The first comparator's first comparison terminal is connected to the gate of the GaN power amplifier via a voltage divider circuit. The first reference voltage is obtained by dividing the voltage output from the second output terminal of the buck module. The ratio of the gate voltage divided at the first comparison terminal of the first comparator to the gate voltage is the same as the ratio of the first reference voltage to the first threshold voltage. The gate voltage is the gate power-on voltage provided by the positive-to-negative voltage conversion module to the gate of the GaN power amplifier.
7. The power supply device for the GaN power amplifier according to claim 3, characterized in that, The step-down module includes a step-down switching power supply and a second low-dropout linear regulator. The input terminal of the step-down switching power supply is connected to the single-channel power supply, and the output terminal is connected to both the power supply terminal of the drain switch control module and the input terminal of the second low-dropout linear regulator. The output terminal of the second low-dropout linear regulator is connected to the input terminal of the radio frequency signal switch. The operating voltage of the step-down switching power supply is the third threshold voltage.
8. The power supply device for the GaN power amplifier according to claim 1, characterized in that, The drain switch control module includes a first comparator, and the radio frequency signal switch control module includes a second comparator and an AND gate. One input of the AND gate is connected to the output of the second comparator, and the other input of the AND gate is connected to a radio frequency transmit switch signal. The output of the AND gate is connected to the control terminal of the radio frequency signal switch. The first comparison terminal of the second comparator is connected to the drain of the GaN power amplifier, and the second comparison terminal of the first comparator is connected to a second reference voltage. The radio frequency transmit switch signal indicates whether the GaN power amplifier is working or not.
9. The power supply device for the GaN power amplifier according to claim 1, characterized in that, The drain switch and / or the radio frequency signal switch include a P-channel MOSFET.
10. A communication device, characterized in that, Includes the power supply device and GaN power amplifier as described in any one of claims 1 to 9.