Plasma source and plasma processing device

CN115696713BActive Publication Date: 2026-08-28TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202210808444.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-07-21
Filing Date
2022-07-11
Publication Date
2026-08-28
Estimated Expiration
2042-07-11

AI Technical Summary

Technical Problem

在这样地对远程生成源使用ICP型的远程生成源的情况下,存在等离子体的稳定范围窄、等离子体点火不容易的情况

Benefits of technology

[0013]根据一个方面,能够提供使等离子体点火变得容易的等离子体源。

✦ Generated by Eureka AI based on patent content.

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Abstract

A plasma source and a plasma processing apparatus are provided. The plasma source has: a first chamber configured to form a flat first plasma generation space and having first and second walls that are opposed walls having the largest area among walls configuring the first chamber; a gas supply portion configured to be able to supply a gas into the first chamber; an electromagnetic wave supply portion having a dielectric window disposed facing the first plasma generation space at an opening provided to the first wall and configured to be able to supply an electromagnetic wave into the first chamber via the dielectric window; a plasma supply portion that supplies radicals contained in plasma generated from the gas supplied into the first chamber to the outside of the first chamber; and a plasma ignition source that protrudes from an inner wall of the second wall opposite the dielectric window in the first chamber and is disposed apart from the dielectric window. According to the present application, ignition of plasma can be made easy.
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Citation Information

Patent Citations

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