Cleaning unit for chamber exhaust cleaning

Abstract

Embodiments disclosed herein include a cleaning module for an exhaust line of a chamber. In one embodiment, a mobile cleaning module includes a chamber, wherein the chamber includes a first opening and a second opening. In one embodiment, the cleaning module further includes a cover that seals the first opening. In one embodiment, the cover includes a dielectric plate, a dielectric resonator coupled to the dielectric plate, a monopole antenna disposed in a hole into the dielectric resonator, and a conductive layer that surrounds the dielectric resonator.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Non-Provisional Application No. 16 / 898,244, filed on June 10, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments relate to vacuum chambers, and more specifically to cleaning units for venting the chambers. Background Technology

[0004] In semiconductor manufacturing, chamber processing can create unwanted deposits in exhaust lines. These unwanted deposits can accumulate over time and negatively impact tool performance. For example, these deposits can reduce exhaust line conductivity and / or cause component failure along the exhaust line. Throttle valves in exhaust lines are particularly susceptible to these deposits.

[0005] Currently, there is no solution for cleaning deposits from throttle valves or other components of the exhaust line. The only available remedy is to replace the throttle valve. Replacing the throttle valve requires significant downtime for handling tools, resulting in high maintenance costs. Summary of the Invention

[0006] The embodiments disclosed herein include a cleaning module for an exhaust line of a chamber. In one embodiment, the movable cleaning module includes: a chamber, wherein the chamber includes a first opening and a second opening. In one embodiment, the cleaning module further includes a cover that seals the first opening. In one embodiment, the cover includes: a dielectric plate; a dielectric resonator coupled to the dielectric plate; a monopole antenna disposed in a hole entering the dielectric resonator; and a conductive layer surrounding the dielectric resonator.

[0007] Additional embodiments disclosed herein include a mobile cleaning assembly for an exhaust line of a chamber. In one embodiment, the mobile cleaning assembly includes: a cart; and a solid-state electronics module mounted on the cart, wherein the solid-state electronics module is configured to generate microwave electromagnetic radiation. In one embodiment, the assembly further includes: a processor mounted on the cart and electrically coupled to the solid-state electronics module; and a plasma cleaning module. In one embodiment, the plasma cleaning module is electrically coupled to the solid-state electronics module.

[0008] Additional embodiments disclosed herein include a processing tool having a cleaning module on an exhaust line. In one embodiment, the processing tool includes: a first chamber having a base for supporting a substrate; and an exhaust line fluidly coupled to the first chamber. In one embodiment, the exhaust line includes: a pump; a main exhaust line between the first chamber and the pump; a throttle valve located in the main exhaust line; and a cleaning line fluidly coupled to the main exhaust line. In one embodiment, a second chamber is fluidly coupled to the cleaning line and provides a plasma source for generating plasma in the second chamber.

[0009] The above overview does not include an exhaustive list of all embodiments. It is contemplated that all systems and methods are included and can be practiced from all suitable combinations of the various embodiments summarized above and those disclosed in the embodiments described below and specifically pointed out in the claims filed with this application. These combinations have specific advantages not specifically described in the above overview. Attached Figure Description

[0010] Figure 1A This is a cross-sectional view of a processing tool including a plasma cleaning module coupled to an exhaust device, according to one embodiment.

[0011] Figure 1B This is a cross-sectional view of a processing tool according to one embodiment, the processing tool including a modular microwave plasma source and a plasma cleaning module coupled to an exhaust device.

[0012] Figure 2 This is a block diagram of a solid-state electronic device for generating microwave electromagnetic radiation according to an embodiment.

[0013] Figure 3A This is a cross-sectional view of a plasma cleaning module according to one embodiment.

[0014] Figure 3B This is a cross-sectional view of a plasma cleaning module according to one embodiment, the plasma cleaning module having a dielectric plate and a dielectric resonator as an integral structure.

[0015] Figure 3C This is a cross-sectional view of a plasma cleaning module having a conductive layer surrounding a dielectric resonator according to an embodiment, the conductive layer comprising multiple layers.

[0016] Figure 3D This is a cross-sectional view of a plasma cleaning module having multiple dielectric resonators according to one embodiment.

[0017] Figure 4AThis is a cross-sectional view of an exhaust device having an integrated plasma cleaning module according to one embodiment.

[0018] Figure 4B This is a cross-sectional view of an exhaust device having a portable plasma cleaning module according to an embodiment.

[0019] Figure 5A This is a block diagram of a mobile cleaning assembly according to one embodiment.

[0020] Figure 5B This is a block diagram of a mobile cleaning component according to an additional embodiment.

[0021] Figure 6 This is a process flow diagram of cleaning an exhaust pipe using a cleaning module according to one embodiment.

[0022] Figure 7 A block diagram of an exemplary computer system that can be used in conjunction with a plasma cleaning module is illustrated according to one embodiment. Detailed Implementation

[0023] The apparatus according to the embodiments described herein includes a cleaning unit for a chamber exhaust line. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail so as not to unnecessarily obscure the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0024] As mentioned above, the accumulation of deposits in exhaust lines requires costly downtime for processing equipment. Accordingly, the embodiments disclosed herein include a plasma cleaning module attached to the exhaust line. The plasma cleaning module provides a plasma species for cleaning the exhaust line. Therefore, the plasma cleaning module can remove deposits without significantly taking the processing equipment offline. Specifically, the processing equipment can be kept under vacuum during cleaning, eliminating the need to re-evacuate the processing equipment and re-establish stable conditions for substrate processing after maintenance. This represents a significant cost saving.

[0025] In some embodiments, the plasma cleaning module is portable. That is, the plasma cleaning module can be part of a mobile cleaning assembly that can be shared between multiple chambers. This reduces the capital costs required to provide cleaning functionality. Furthermore, the processing equipment may not require significant redesign to accommodate the plasma cleaning module. The plasma cleaning module can be connected to a port along the exhaust line.

[0026] Portable plasma cleaning modules are made possible by the design of the plasma source. Specifically, the embodiments disclosed herein include microwave plasma sources with solid-state electronics. This microwave source allows for a compact design compared to magnetron microwave power sources that require bulky waveguides. In the embodiments disclosed herein, the solid-state electronics module can be stored on a cart and attached to the dielectric resonator of the portable cleaning module via a coaxial cable. In one embodiment, the cart may also house a gas panel and a cooling source that are also attached to the portable cleaning module. However, in some embodiments, one or both of the gas and cooling fluid may be derived from the processing tool.

[0027] Furthermore, due to its compact design, the plasma cleaning module can be integrated with the processing tool. That is, the plasma cleaning module can be considered part of the processing tool. In these embodiments, the gas and cooling fluid can originate from the processing tool.

[0028] Now for reference Figure 1A and 1B According to one embodiment, a cross-sectional view of a processing tool 100 including a plasma cleaning module 150 is shown. The plasma processing tool 100 may be a plasma etching chamber, a chemical vapor deposition chamber, a plasma-enhanced chemical vapor deposition chamber, an atomic layer deposition chamber, a plasma-enhanced atomic layer deposition chamber, a physical vapor deposition chamber, a plasma processing chamber, an ion implantation chamber, or other suitable vacuum or controlled environment processing chamber.

[0029] The processing tool 100 includes a grounded chamber 142. The chamber 142 may include a processing area 102 and a evacuation area 104. The chamber 142 may be sealed using a cover assembly 110. Processing gas is supplied from one or more gas sources 106 (e.g., gas panels) via a mass flow controller 149 to the cover assembly 110 and into the processing area 102.

[0030] A pump in exhaust region 196 maintains the required pressure within chamber 142 and removes byproducts from the processing within chamber 142. In one embodiment, the exhaust region may include an exhaust line 155 between chamber 142 and the pump. A cleaning line 156 may intersect with the exhaust line 155. In one embodiment, the cleaning line 156 is located between the exhaust line 155 and the plasma cleaning module 150. In one embodiment, the plasma cleaning module is configured to provide remote plasma for cleaning exhaust region 196.

[0031] In one embodiment, the plasma cleaning module 150 includes a cleaning chamber 154. The cleaning chamber 154 is where plasma is generated. In one embodiment, the cleaning chamber 154 includes a first opening sealed by a dielectric plate 153 and a second opening connected to a cleaning conduit 156. The plasma in the plasma cleaning module 150 can be generated using a modular microwave source. For example, a dielectric resonator 151 is coupled to the dielectric plate 153. A monopole antenna 152 is inserted into the axis of the dielectric resonator 151. The monopole antenna 152 is connected to solid-state microwave generation electronics (described in more detail below). Due to the solid-state design, the bulky waveguides and other components required for magnetron-type microwave plasma are not needed, and a compact design is provided. This compact design allows the plasma cleaning module 150 to be integrated with processing tools without significant redesign.

[0032] In one embodiment, the plasma cleaning module 150 is connected to the gas source 106 via a gas line 158. A mass flow controller 159 controls the flow of gas into the cleaning chamber 154. In the illustrated embodiment, the gas line 158 is shown passing through the wall of the cleaning chamber 154. However, it should be understood that gas may also be supplied via a dielectric plate 153 (e.g., using a nozzle design or other manifold-type structure). In one embodiment, the plasma cleaning module 150 may also be temperature-controlled. For example, the plasma cleaning module 150 may be connected to a cooling fluid source.

[0033] In one embodiment, the cover assembly 110 generally includes an upper electrode comprising a nozzle plate 116 and a heat transfer plate 118. The cover assembly 110 is isolated from the chamber 142 by an insulating layer 113. The upper electrode is coupled to a source RF generator 103 via a mating (not shown) connection. The source RF generator 103 may have frequencies, for example, between 300 kHz and 60 MHz or between 60 MHz and 180 MHz, and in a particular embodiment, in the 13.56 MHz band.

[0034] Accordingly, the processing tool 100 may include a pair of plasma sources. For example, an RF generator 103 may generate a first plasma in the processing region 102, and microwave electronics may generate a second plasma in the cleaning chamber 154. Figure 1A In the specific embodiment illustrated, electromagnetic radiation of different wavelengths is used to generate the first plasma and the second plasma.

[0035] Gas from gas source 106 enters a manifold 120 within nozzle plate 116 and exits via an opening in nozzle plate 116 into the processing area 102 of chamber 142. In one embodiment, heat transfer plate 118 includes channels 119 through which heat transfer fluid flows. Nozzle plate 116 and heat transfer plate 118 are made of an RF conductive material, such as aluminum or stainless steel. In some embodiments, instead of (or in addition to) nozzle plate 116, gas nozzles or other suitable gas distribution assemblies are provided for distributing processing gas into chamber 142.

[0036] Processing region 102 may include a lower electrode 161, to which substrate 105 is fixed. A portion of the processing ring 197 surrounding substrate 105 may also be supported by the lower electrode 161. Substrate 105 may be inserted into (or extracted from) chamber 142 via a slit valve tunnel 141 passing through chamber 142. For simplicity, a gate for the slit valve tunnel 141 is omitted. Lower electrode 161 may be an electrostatic chuck. Lower electrode 161 may be supported by support member 157. In one embodiment, lower electrode 161 may include multiple heating zones, each independently controllable to a temperature setpoint. For example, lower electrode 161 may include a first hot zone near the center of substrate 105 and a second hot zone near the periphery of substrate 105. Bias power RF generator 125 is coupled to lower electrode 161 via mating 127. If desired, bias power RF generator 125 provides bias power to excite the plasma. The bias power RF generator 125 may have a low frequency, for example, between about 300 kHz and 60 MHz, and in a particular embodiment, in the 13.56 MHz band.

[0037] exist Figure 1A In the illustration, the processing tool 100 is depicted as a plasma reactor capable of generating plasma in a processing zone 102. However, it should be understood that the processing tool 100 may include a processing zone 102 that does not use a plasma source. For example, the processing tool 100 may include a furnace. In some embodiments, the processing zone 102 may also be a batch reactor. That is, the processing zone 102 may process multiple substrates simultaneously.

[0038] Now refer to Figure 1B A cross-sectional view of the processing tool 100 is illustrated according to an additional embodiment. In addition to the plasma source 130 for generating plasma in the processing region 102, Figure 1B The processing tools in it can be substantially similar to Figure 1A The processing tool 100 in the middle. Instead of using an RF plasma source, Figure 1BThe processing tool 100 may use a microwave plasma source 130. In a particular embodiment, the microwave plasma source 130 is a modular microwave plasma source. For example, the microwave plasma source 130 may include a dielectric plate 133 having a plurality of dielectric resonators 131 arranged on a dielectric plate 133. A monopole antenna 131 may be disposed at the axis of each dielectric resonator 131. Each monopole antenna 131 may be connected to a solid-state microwave generating electronics.

[0039] In one embodiment, the solid-state microwave electronics of the microwave plasma source 130 may be the same microwave electronics used to generate plasma in the plasma cleaning module 150. In other embodiments, separate microwave electronics may be used for the microwave plasma source 130 and the plasma cleaning module 150.

[0040] Now for reference Figure 2 A schematic diagram of a solid-state power source 215 is illustrated according to one embodiment. In one embodiment, the solid-state power source 215 includes an oscillator module 206. The oscillator module 206 may include voltage control circuitry 211 for providing an input voltage to a voltage-controlled oscillator 220 to generate microwave electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between approximately 1V and 10V DC. The voltage-controlled oscillator 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to one embodiment, the input voltage from the voltage control circuitry 211 causes the voltage-controlled oscillator 220 to oscillate at a desired frequency. In one embodiment, the microwave electromagnetic radiation may have a frequency between approximately 0.1MHz and 30MHz. In one embodiment, the microwave electromagnetic radiation may have a frequency between approximately 30MHz and 300MHz. In one embodiment, the microwave electromagnetic radiation may have a frequency between approximately 300MHz and 1GHz. In one embodiment, the microwave electromagnetic radiation may have a frequency between approximately 1GHz and 300GHz.

[0041] According to one embodiment, electromagnetic radiation is transmitted from a voltage-controlled oscillator 220 to an amplification module 212. The amplification module 212 may include a driver / preamplifier 213 and a main power amplifier 214, each coupled to a power supply 216. According to one embodiment, the amplification module 212 may operate in a pulsed mode. For example, the amplification module 212 may have a duty cycle between 1% and 99%. In a more specific embodiment, the amplification module 212 may have a duty cycle between approximately 15% and 50%.

[0042] In one embodiment, after being processed by amplification module 212, electromagnetic radiation can be transmitted to thermal break 219 and applicant 231. However, a portion of the power transmitted to thermal break 219 may be reflected back due to output impedance mismatch. Accordingly, some embodiments include detector module 218, which allows sensing the level of forward power 204 and reflected power 203 before the reflected power reaches the circulator 217 that routes the reflected power to ground and feeds it back to control circuit module 208. It should be understood that detector module 218 may be located in one or more different locations in the system. In one embodiment, control circuit module 208 interprets forward power 204 and reflected power 203 and determines the level of control signal 209 communicatively coupled to oscillator module 206 and the level of control signal 207 communicatively coupled to amplifier module 212. In one embodiment, control signal 209 adjusts oscillator module 206 to optimize high-frequency radiation coupled to amplification module 212. In one embodiment, control signal 207 adjusts amplifier module 212 to optimize the output power coupled to applicator 231 via thermal interruption 219. In one embodiment, in addition to the customized impedance matching in thermal interruption 219, feedback control of oscillator module 206 and amplifier module 212 allows the level of reflected power to be less than about 5% of the forward power. In some embodiments, feedback control of oscillator module 206 and amplifier module 212 allows the level of reflected power to be less than about 2% of the forward power.

[0043] Accordingly, the embodiments allow for an increased percentage of forward power coupling into processing chamber 242 or cleaning chamber 254, and an increase in the available power coupled to the plasma. Furthermore, impedance tuning using feedback control is superior to impedance tuning in a typical slotted antenna. In a slotted antenna, impedance tuning involves moving two dielectric blocks formed in the applicator. This involves the mechanical movement of two separate components in the applicator, which increases the complexity of the applicator. Moreover, mechanical movement may not be as precise as the frequency changes provided by the voltage-controlled oscillator 220.

[0044] Now refer to Figures 3A to 3D Cross-sectional views of various plasma cleaning modules 350 are illustrated according to various embodiments. Figures 3A to 3D The plasma cleaning module 350 can be integrated with the processing tool. In other embodiments, the plasma cleaning module 350 can be a portable plasma cleaning module. That is, the plasma cleaning module 350 can be easily detached from the processing tool. The portable plasma cleaning module is described in more detail below.

[0045] Now refer to Figure 3AAccording to one embodiment, a cross-sectional view of a plasma cleaning module 350 is illustrated. The plasma cleaning module 350 may include a cleaning chamber 354 in which plasma is generated. The cleaning chamber 354 may have a first opening and a second opening. The first opening may be closed by a dielectric plate 353. In one embodiment, a seal 358 (e.g., an O-ring or the like) may be placed between the dielectric plate 353 and the cleaning chamber 354. The second opening may be fluidly coupled to a cleaning line 356. The cleaning line is coupled to an exhaust line (not shown) of the processing tool.

[0046] In one embodiment, a dielectric resonator 351 is coupled to a dielectric plate 353. An aperture may be located at the axis of the dielectric resonator 351. In one embodiment, a monopole antenna 352 is inserted into the aperture. The monopole antenna 352 is connected to a power source supplying microwave electromagnetic radiation. For example, the power source may be a solid-state microwave electronic device module, such as those described above. Figure 2 The solid-state power source 215 is described. In the illustrated embodiment, the dielectric resonator 351 abuts against the outer surface of the dielectric plate 353. However, in other embodiments, the dielectric resonator 351 may extend through the dielectric plate and extend into the free space within the clean chamber 354.

[0047] In one embodiment, the conductive layer 359 may surround the dielectric resonator 351. In some embodiments, the conductive layer 359 may be maintained at a ground potential. The conductive layer 359 shields the dielectric resonator 351 and provides improved coupling for microwave electromagnetic radiation entering the cleaning chamber 354. In one embodiment, the conductive layer 359 may be a temperature-controlled component. For example, the conductive layer may be fluidly coupled to a coolant source. The conductive layer 359 may include cooling channels (not shown) through which coolant from the coolant source flows. In other embodiments, the plasma cleaning module may also include heating elements or be coupled to a high-temperature hot fluid source.

[0048] In one embodiment, gas may be supplied to the cleaning chamber 354. The gas may be injected via a port in the wall of the cleaning chamber 354. In other embodiments, gas may be supplied to the cleaning chamber 354 via a dielectric plate 353.

[0049] Now refer to Figure 3B A cross-sectional view of the plasma cleaning module 350 is illustrated according to an additional embodiment. Apart from the interface between the dielectric plate 353 and the dielectric resonator 351, Figure 3B The plasma cleaning module 350 in the middle can be substantially similar to Figure 3A The plasma cleaning module 350 in the example. Figure 3B In the illustrated embodiment, there may be no identifiable interface between the dielectric plate 353 and the dielectric resonator 351. That is, the dielectric plate 353 and the dielectric resonator 351 may be formed as a single integral structure.

[0050] Now refer to Figure 3C A cross-sectional view of the plasma cleaning module 350 is illustrated according to an additional embodiment. Besides the structure of the conductive layer 359, Figure 3C The plasma cleaning module 350 in the middle can be substantially similar to Figure 3B The plasma cleaning module 350 is shown in the figure. The conductive layer 359 may include multiple conductive layers. For example, a first conductive layer 359... A On dielectric plate 353, and second conductive layer 359 B On the first conductive layer. Can be used with... Figure 3A A similar structure is shown to implement a similar multilayer conductive layer 359. That is, the first conductive layer 359 can be implemented when the dielectric plate 353 and the dielectric resonator 351 are separate components. A Second conductive layer 359 B .

[0051] In one embodiment, the first conductive layer 359 A It may have a first coefficient of thermal expansion (CTE) and a second conductive layer 359. B A second CTE may be greater than that of the first CTE. Specifically, the first conductive layer 359 A The first CTE can be closely matched with the CTE of dielectric 353 to minimize thermal stress that could damage dielectric 353. In a particular embodiment, the first conductive layer 359 A It may include titanium, and a second conductive layer 359 B It may include aluminum. In some embodiments, the first conductive layer 359 A Can be fixed to the second conductive layer 359 B For example, the first conductive layer 359 A It can be bolted or otherwise bonded to the second conductive layer 359 B .

[0052] Now refer to Figure 3D A cross-sectional view of the plasma cleaning module 350 is illustrated according to an additional embodiment. In addition to multiple dielectric resonators 351 disposed on the dielectric plate 353, Figure 3D The plasma cleaning module 350 in the middle can be substantially similar to Figure 3A The plasma cleaning module 350 is shown. Although two dielectric resonators 351 are illustrated... A and 351 B However, it should be understood that any number of dielectric resonators 351 may be included in the plasma cleaning module 350. Increasing the number of dielectric resonators 351 can provide improved cleaning of the exhaust area.

[0053] Now refer to Figure 4AA cross-sectional view of the exhaust region 496 is illustrated according to one embodiment. Figure 4A The exhaust region 496 illustrates the integrated plasma cleaning module 450. That is, the plasma cleaning module 450 is integrated as part of the processing tool. In one embodiment, the exhaust region 496 includes an exhaust line 455 that fluidly couples the main processing chamber 442 to a pump. In one embodiment, a throttle valve 484 may be disposed within the exhaust line 455. The cleaning line 456 fluidly couples the cleaning chamber 454 of the plasma cleaning module 450 to the exhaust line 455.

[0054] In one embodiment, the plasma cleaning module 450 may be substantially similar to any of the plasma cleaning modules 350 described above. For example, the plasma cleaning module 450 may include a cleaning chamber 454, a dielectric plate 453, a dielectric resonator 451, a monopole antenna 452, and a conductive layer 459.

[0055] In one embodiment, exhaust zone 496 may include multiple valves. A first valve 481 may be disposed along exhaust line 455 between main chamber 442 and throttle valve 484. The first valve 481 may be closed during cleaning to isolate chamber 443. Therefore, the conditions of main chamber 442 are not changed during or after maintenance. A second valve 482 may be disposed along exhaust line 455 between throttle valve 482 and pump. A third valve 483 may be disposed along cleaning line 456 between cleaning chamber 454 and exhaust line 455. Valves 481, 482, and 483 may be controlled by a processing tool computer (not shown).

[0056] In one embodiment, valves 481, 482, and 483 can be opened or closed according to desired processing operations. For example, during substrate processing in the main chamber 442, the first valve 481 and the second valve 482 can be opened, while the third valve 483 can be closed. During a cleaning operation, the third valve 483 can be opened and the first valve 481 can be closed. The following relates to... Figure 6 The process of performing cleaning operations using the plasma cleaning module 450 is described in more detail.

[0057] Now refer to Figure 4B A cross-sectional view of the exhaust region 496 of the processing tool is illustrated according to an additional embodiment. In one embodiment, in addition to the plasma cleaning module 450 being a portable plasma cleaning module 450, Figure 4B The exhaust region 496 in the middle can be substantially similar to Figure 4A The exhaust area 496 is located within the plasma cleaning module 450. That is, the plasma cleaning module 450 is configured for easy attachment and removal from the processing tool. In one embodiment, the portable plasma cleaning module can be stored on a trolley when not in use (described in more detail below).

[0058] In one embodiment, the plasma cleaning module 450 may include a flange 485 attached to the cleaning chamber 454. The cleaning line 456 may also include a flange 486 for intersecting with the flange 485 of the plasma cleaning module 450. Any suitable flange or other connection scheme suitable for providing a vacuum-tight seal between the cleaning line 456 and the plasma cleaning module 450 may be used. For example, flanges 485 and 486 may include KF40 or KF50 flanges.

[0059] Now refer to Figure 5A and 5B A schematic diagram of a mobile cleaning assembly 560 is illustrated according to one embodiment. The mobile cleaning assembly 560 allows the portable plasma cleaning module 550 to be easily moved throughout the facility to provide cleaning for multiple processing tools. In some embodiments, the mobile cleaning assembly 560 may also include one or more peripheral devices (e.g., gases, cooling fluids, etc.) for the portable plasma cleaning module 550.

[0060] Now for reference Figure 5A A schematic diagram of a mobile cleaning assembly 560 is illustrated according to one embodiment. In one embodiment, the mobile cleaning assembly 560 includes a cart 561 and a plasma cleaning module 550 attached to the cart 561. In one embodiment, the plasma cleaning module 550 may be similar to any plasma cleaning module disclosed herein. For example, the plasma cleaning module 550 may include a cleaning chamber 554, a dielectric plate 553, and a dielectric resonator 551. A flange 585 or other interconnecting components may be connected to the cleaning chamber 554 to attach the plasma cleaning module to a processing tool. The cart 561 is easily movable around the facility. For example, the cart 561 may have a set of wheels 562.

[0061] When not in use, the plasma cleaning module 550 is stored on a cart 560. When in use, the plasma cleaning module 550 can be secured to the cart 560 via various interconnections with peripheral devices stored on the cart. For example, the cart 560 may house a solid-state microwave electronics device 563, a temperature-controlled container for heat transfer fluid (e.g., a cooling unit 564), and a gas panel 565. The conduit 568 between the plasma cleaning module 550 and the microwave electronics device 563 may be a coaxial cable. The gas conduit 571 and the fluid conduit 569 may be any suitable conduit for conveying gas and fluid, respectively.

[0062] In yet another embodiment, similar to Figure 4AIn the embodiment illustrated, the plasma cleaning module 550 can be integrated with the processing tool rather than stored on the cart 560. In this embodiment, peripheral devices stored on the cart 560 can be attached to the plasma cleaning module 550 via conduits 568, 569, and 571, which can be detached from the plasma cleaning module 550 when it is not in use.

[0063] In one embodiment, a processor (e.g., CPU) 566 is also provided on the cart 561. The processor 566 is communicatively coupled to peripheral devices on the cart 561. Therefore, the processor 566 can be used to control the plasma cleaning module 550 (i.e., via control of the microwave electronics 563), as well as the temperature of the plasma cleaning module 550 (i.e., via control of the cooling unit 564) and the gas flow to the plasma cleaning module 550 (i.e., via control of the gas panel 565). In some embodiments, the processor 566 may also be communicatively coupled to the processing tool CPU 570. Therefore, components of the processing tool (not shown) can also be controlled to work in conjunction with the plasma cleaning module 550. For example, one or more valves in the exhaust area of ​​the processing tool can be opened or closed to initiate the cleaning process.

[0064] In one embodiment, power for moving the cleaning assembly 560 can be provided via plug 567. Plug 567 can be a standard plug that connects to a 120V or 240V socket. Accordingly, in these embodiments, a dedicated power supply for easily providing higher voltages is not required. The lower power requirement can be attributed to the compact design and solid-state electronics for driving one (or more) applicators for injecting microwave electromagnetic radiation into the cleaning chamber 554.

[0065] Now for reference Figure 5B A schematic diagram of a mobile cleaning assembly 560 is illustrated according to an additional embodiment. Except that one or more peripheral devices of the plasma cleaning module 550 are removed from the cart 561, the mobile cleaning assembly 560 may be substantially similar to... Figure 5A The mobile cleaning component 560. Specifically, Figure 5B The embodiment illustrated shows the removal of the gas panel from the trolley 561. Alternatively, the gas source to the plasma cleaning module 550 is the gas panel 506 of the treatment tool.

[0066] exist Figure 5B In this embodiment, the cooling unit 564 remains on the trolley 561. However, it should be understood that the cooling unit 564 may also be removed from the trolley 561. In these embodiments, the cooling fluid for the plasma cleaning module 550 may be derived from the cooling unit of the processing tool. In some embodiments, both the gas panel 565 and the cooling unit 564 may be removed from the trolley 561.

[0067] In other embodiments, the mobile cleaning assembly 560 may consist only of a plasma cleaning module 550 and corresponding interconnects (e.g., lines 568, 569, and 571) for connection to the processing tool. In these embodiments, the plasma cleaning module 550 may receive power, cooling fluid, and gas from the processing tool. The processor of the processing tool may also control the operation of the plasma cleaning module 550.

[0068] Now for reference Figure 6 A process flow diagram illustrating a process 640 for cleaning the exhaust area of ​​a cleaning tool is shown according to one embodiment. Process 640 can be implemented using either an integrated plasma cleaning module or a portable plasma cleaning module. In the case of a portable plasma cleaning module, process 640 may further include attaching the portable plasma cleaning module to the exhaust line.

[0069] In one embodiment, process 640 may include operation 641, which includes closing a chamber valve in the exhaust line. The closed chamber valve may be a chamber isolation valve. The chamber isolation valve may be a valve between the main chamber and the cleaning line. For example, the closed valve may be... Figure 4A and 4B The first valve 481 is shown. Closing the chamber isolation valve allows cleaning to be performed without changing the pressure in the main chamber. Therefore, no additional evacuation is required after maintenance, and downtime of the processing equipment is reduced.

[0070] In one embodiment, process 640 may include operation 642, which includes opening a valve to fluidly couple the plasma cleaning module to a pump. For example, the opened valve may be... Figure 4A and 4B The third valve 483 in the middle.

[0071] In one embodiment, process 640 may include operation 643, which includes evacuating the plasma cleaning module using a pump. For example, the pump may be activated to generate pressure suitable for plasma generation within the cleaning chamber of the plasma cleaning module.

[0072] After a vacuum is provided in the cleaning chamber, process 640 may include operation 646, which includes generating plasma in the plasma cleaning module. In one embodiment, the plasma may be referred to as remote plasma. That is, the plasma can be remotely delivered to the location requiring cleaning. For example, cleaning may occur in an exhaust line attached to the cleaning line and the plasma cleaning module. In one embodiment, cleaning may include cleaning a throttle valve included in the exhaust line.

[0073] Now for reference Figure 7A block diagram of an exemplary computer system 760, representing a usable processing tool or mobile plasma cleaning module, is illustrated according to one embodiment. In one embodiment, the computer system 760 is coupled to and controls processing within a plasma chamber. The computer system 760 may be connected (e.g., via a network connection) to other machines on a local area network (LAN), intranet, extranet, or the Internet. The computer system 760 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 760 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), cellular phone, network application device, server, network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) specifying the actions to be taken by the machine. Furthermore, although only a single machine is illustrated for computer system 760, the term "machine" should also be considered as a collection of any machines (e.g., computers) that individually or jointly execute a set of instructions (or more sets of instructions) to perform any one or more of the methods described herein.

[0074] Computer system 760 may include a computer program product, or software 722, having a non-transitory machine-readable medium on which instructions are stored, which can be used to program computer system 760 (or other electronic device) to perform processes according to embodiments, such as process 550. The machine-readable medium includes any mechanism for storing or transmitting information in a machine-readable (e.g., computer-readable) form. For example, machine-readable (e.g., computer-readable) media include machine-readable storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.), machine-readable transmission media (e.g., electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared light signals, digital signals, etc.)), etc.

[0075] In one embodiment, the computer system 760 includes a system processor 702 that communicates with each other via a bus 730, a main memory 704 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 706 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 718 (e.g., a data storage device).

[0076] System processor 702 represents one or more general-purpose processing devices, such as microsystem processors, central processing units, etc. More specifically, the system processor may be a Complex Instruction Set Computing (CISC) microsystem processor, a Reduced Instruction Set Computing (RISC) microsystem processor, a Very Long Instruction Word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. System processor 702 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal system processors (DSPs), network system processors, etc. System processor 702 is configured to execute processing logic 726 for performing the operations described herein.

[0077] The computer system 760 may further include a system network interface device 708 for communicating with other devices or machines. The computer system 760 may also include a video display unit 710 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 712 (e.g., a keyboard), a cursor control device 714 (e.g., a mouse), and a signal generation device 716 (e.g., a speaker).

[0078] Secondary memory 718 may include machine-accessible storage medium 731 (or more specifically, computer-readable storage medium) on which one or more instruction sets (e.g., software 722) are stored, performing any or more of the methods or functions described herein. Software 722 may also reside wholly or at least partially within main memory 704 and / or system processor 702 during execution by computer system 760, which also constitute machine-readable storage media. Software 722 may further be transmitted or received on network 720 via system network interface device 708.

[0079] Although the machine-accessible storage medium 731 is illustrated as a single medium in the exemplary embodiments, the term "machine-readable storage medium" should be considered as encompassing a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be considered as encompassing any medium capable of storing or encoding sets of instructions for machine execution and causing the machine to perform any one or more methods. Accordingly, the term "machine-readable storage medium" should be considered as encompassing, but not limited to, solid-state memory, and optical and magnetic media.

[0080] Specific exemplary embodiments have been described in the foregoing specification. Clearly, various modifications may be made to these embodiments without departing from the scope of the appended claims. Accordingly, the specification and drawings should be considered illustrative rather than restrictive.

Claims

1. A mobile cleaning module, comprising: A chamber, wherein the chamber includes a first opening and a second opening; A cover that seals the first opening, wherein the cover comprises: Dielectric board; A dielectric resonator coupled to the dielectric plate; A monopole antenna, wherein the monopole antenna is disposed in a hole entering the dielectric resonator; and A conductive layer surrounding the dielectric resonator; Port, the port being used to introduce gas into the chamber; and An exhaust section for removing the gas from the second opening of the chamber, the exhaust section being configured to be coupled to a evacuation area of ​​a processing chamber, the evacuation area being separate from and distinct from the port.

2. The mobile cleaning module of claim 1, wherein the second opening includes a flange.

3. The mobile cleaning module as described in claim 2, wherein the flange is a KF40 flange or a KF50 flange.

4. The mobile cleaning module of claim 1, wherein the cover further includes a channel for the flow of coolant.

5. The mobile cleaning module as claimed in claim 1, wherein the monopole antenna is electrically coupled to a solid-state microwave source.

6. The mobile cleaning module of claim 1, wherein the cover further comprises: A second dielectric resonator is coupled to the dielectric plate; and The second monopole antenna is disposed in a hole in the second dielectric resonator.

7. The mobile cleaning module as claimed in claim 1, wherein the dielectric resonator is a main body separate from the dielectric plate.

8. The mobile cleaning module as claimed in claim 1, wherein the dielectric resonator and the dielectric plate are an integral structure.

9. The mobile cleaning module of claim 1, wherein the conductive layer comprises a first conductive layer adjacent to the dielectric plate and a second conductive layer on the first conductive layer, wherein the coefficient of thermal expansion of the first conductive layer is less than the coefficient of thermal expansion of the second conductive layer.

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