具有分段沟槽和屏蔽件的沟槽功率器件
By combining segmented gate trenches and shielding patterns, the problems of leakage current and electric field congestion in power semiconductor devices under high voltage are solved, improving the utilization rate and performance of the conductive area of the device and simplifying the manufacturing process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WOLF SEMICON CORP
- Filing Date
- 2021-04-27
- Publication Date
- 2026-07-17
AI Technical Summary
Existing power semiconductor devices are prone to leakage current and electric field congestion under high voltage, which leads to a decrease in device performance, and the inhomogeneity of doping during the manufacturing process affects reliability.
A segmented gate trench design is adopted, which combines shielding patterns and shielding connection patterns, and is formed in the semiconductor layer structure by ion implantation. This provides improved electrical contact and conductive area utilization, and reduces the limitation of the shielding pattern on the channel region.
This improves the utilization rate of the conductive area of the device, enhances its current capability and blocking performance, while simplifying the manufacturing process and reducing leakage current and electric field congestion problems.
Smart Images
Figure CN115699328B_ABST