Terahertz device

Abstract

A terahertz device is provided with an antenna substrate (70) including reflecting films (82A, 82B) that are curved in a concave manner, the reflecting films (82A) and the reflecting films (82B) being arranged adjacent in the y direction, the respective sizes of the reflecting films (82A) and the reflecting films (82B) in the x direction being smaller than the respective sizes of the reflecting films (82A) and the reflecting films (82B) in the y direction as viewed in the z direction.

Description

Technical Field

[0001] This invention relates to terahertz devices. Background Technology

[0002] In recent years, due to the miniaturization of electronic devices such as transistors, the size of electronic devices has become nanometer-scale, leading to the observation of a phenomenon known as the quantum effect. Furthermore, development is underway with the aim of realizing ultra-high-speed devices or devices with novel functions that utilize this quantum effect.

[0003] In this environment, attempts are underway to utilize electromagnetic waves in the terahertz band (0.1 THz to 10 THz) for high-capacity communication and information processing, as well as imaging and measurement. This frequency band possesses characteristics of both light and radio waves. If devices operating in this band can be developed, they could be used not only for imaging, high-capacity communication, and information processing, but also for various applications such as measurement in fields like physical properties, astronomy, and biology.

[0004] As a component for generating or receiving electromagnetic waves at frequencies in the terahertz band, components with structures such as integrated resonant tunnel diodes and fine slot antennas are known (see, for example, Patent Document 1).

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent document 1: Japanese Patent Application Publication No. 2016-111542. Summary of the Invention

[0008] The problem the invention aims to solve

[0009] However, terahertz devices are used as light sources for electromagnetic waves that output terahertz frequencies and as detectors for electromagnetic waves that detect terahertz frequencies. In such terahertz devices, higher output or improved resolution is desirable.

[0010] The object of this invention is to provide a terahertz device capable of achieving high output or improved resolution.

[0011] Technical means for solving problems

[0012] A terahertz device for solving the above problems includes: a plurality of terahertz elements, including a first terahertz element and a second terahertz element for receiving electromagnetic waves; and a plurality of reflecting surfaces, including: a first reflecting surface facing the first terahertz element in the thickness direction to reflect incident electromagnetic waves toward the first terahertz element; and a second reflecting surface facing the second terahertz element in the thickness direction to reflect incident electromagnetic waves toward the second terahertz element. The first reflecting surface is open to the first terahertz element and is curved in a concave manner away from the first terahertz element. The reflecting surface opens into the second terahertz element and is curved in a concave manner in the direction away from the second terahertz element. When the direction parallel to the thickness direction of the first and second terahertz elements is taken as the height direction of the terahertz device, the first reflecting surface and the second reflecting surface are arranged adjacently in a first direction that intersects the height direction of the terahertz device. Viewed from the height direction of the terahertz device, at least one of the dimensions of the first reflecting surface and the second reflecting surface along the first direction is smaller than the dimensions of the first reflecting surface and the second reflecting surface along a second direction that is different from the first direction.

[0013] Based on this structure, the distance between adjacent first and second terahertz elements in the first direction can be reduced. Therefore, it is possible to improve the resolution within the detection range of the electromagnetic waves of the terahertz device.

[0014] A terahertz device for solving the above-mentioned problems includes: a plurality of terahertz elements, including a first terahertz element and a second terahertz element that generate electromagnetic waves; and a plurality of reflecting surfaces, including: a first reflecting surface facing the first terahertz element in the thickness direction to reflect electromagnetic waves generated from the first terahertz element in one direction; and a second reflecting surface facing the second terahertz element in the thickness direction to reflect electromagnetic waves generated from the second terahertz element in one direction, wherein the first reflecting surface is open to the first terahertz element and is curved in a concave manner away from the first terahertz element. The second reflective surface opens into the second terahertz element and is curved in a concave manner in the direction away from the second terahertz element. When the direction parallel to the thickness direction of the first and second terahertz elements is taken as the height direction of the terahertz device, the first reflective surface and the second reflective surface are arranged adjacently in a first direction that intersects the height direction of the terahertz device. Viewed from the height direction of the terahertz device, at least one of the dimensions of the first reflective surface and the second reflective surface along the first direction is smaller than the dimensions of the first reflective surface and the second reflective surface along a second direction that is a different direction from the first direction.

[0015] Based on this structure, by having multiple terahertz elements, when the terahertz device is used as a light source for outputting electromagnetic waves in the terahertz band, high output of the light source can be achieved. Moreover, since the distance between the first terahertz element and the second terahertz element in the first direction can be reduced, the situation where multiple electromagnetic waves output from multiple terahertz elements via multiple reflecting surfaces in one direction are spaced apart in the first direction can be eliminated or the spacing can be reduced, thus making the electromagnetic waves output by the terahertz device uniform in the first direction.

[0016] Invention Effects

[0017] Based on the aforementioned terahertz device, it is possible to achieve high output or improved resolution. Attached Figure Description

[0018] Figure 1 This is a perspective view of the terahertz device of the first embodiment from above.

[0019] Figure 2 Viewed from below Figure 1 A three-dimensional diagram of a terahertz device.

[0020] Figure 3 yes Figure 1 A view of the back of a terahertz device.

[0021] Figure 4 yes Figure 3 End view of the 4-4 line of the terahertz device.

[0022] Figure 5 yes Figure 3 End face view of the 5-5 line of the terahertz device.

[0023] Figure 6 This is a front view of a terahertz element.

[0024] Figure 7 It is a schematic representation of the active element and its surrounding end face.

[0025] Figure 8 yes Figure 7 A magnified view of a portion of the image.

[0026] Figure 9 Viewed from above Figure 1 A three-dimensional view of the antenna substrate of a terahertz device.

[0027] Figure 10 yes Figure 9 A plan view of the antenna substrate.

[0028] Figure 11 yes Figure 10 A cross-sectional view of the antenna substrate along line 11-11.

[0029] Figure 12 yes Figure 3 A cross-sectional view of the 12-12 line of a terahertz device.

[0030] Figure 13 yes Figure 12 A cross-sectional view of line 13-13 of a terahertz device.

[0031] Figure 14 yes Figure 13 Enlarged view of the conductive part and its surrounding area.

[0032] Figure 15 yes Figure 14 Enlarged view of the conductive part and its surrounding area.

[0033] Figure 16 This is an explanatory diagram illustrating an example of a step in the manufacturing method of the terahertz device according to the first embodiment.

[0034] Figure 17 yes Figure 16 A cross-sectional view of the support substrate and its surrounding 17-17 line.

[0035] Figure 18 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0036] Figure 19 In the middle, (a) is Figure 18 (a) is a cross-sectional view of the support substrate and its surrounding 19-19 line, and (b) is a partial enlarged view of (a).

[0037] Figure 20 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0038] Figure 21 yes Figure 20 A cross-sectional view of the support substrate and its surrounding line 21-21.

[0039] Figure 22 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0040] Figure 23 yes Figure 22 A cross-sectional view of the support substrate and its surrounding area along line 23-23.

[0041] Figure 24 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0042] Figure 25 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0043] Figure 26 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0044] Figure 27 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0045] Figure 28 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0046] Figure 29 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0047] Figure 30 This is an explanatory diagram illustrating one step in the manufacturing process of a terahertz device.

[0048] Figure 31 In the diagram, (a) is a schematic diagram of a terahertz element surrounded by gas, and (b) is a graph showing the change in refractive index under the condition of (a).

[0049] Figure 32 In the diagram, (a) is a schematic diagram of a terahertz element surrounded by a dielectric and a gas, and (b) is a graph showing the change in refractive index under the condition of (a).

[0050] Figure 33 This is a schematic cross-sectional view of a comparative example terahertz device, showing the inter-element distance between adjacent terahertz elements.

[0051] Figure 34 This is a schematic cross-sectional view showing the inter-element distance between adjacent terahertz elements in relation to the terahertz device of the first embodiment.

[0052] Figure 35 This is a plan view of the terahertz device according to the second embodiment.

[0053] Figure 36 View from above Figure 35 A three-dimensional view of the antenna substrate of a terahertz device.

[0054] Figure 37 yes Figure 36 A plan view of the antenna substrate.

[0055] Figure 38 It indicates composition Figure 37 A plan view of a single antenna substrate.

[0056] Figure 39 It constitutes Figure 37 A plan view of another separate antenna substrate.

[0057] Figure 40 It constitutes Figure 37 A plan view of another type of separate antenna substrate.

[0058] Figure 41 yes Figure 35 A cross-sectional view of line 41-41 of a terahertz device.

[0059] Figure 42 yes Figure 35 A cross-sectional view of line 42-42 of a terahertz device.

[0060] Figure 43 yes Figure 35 A cross-sectional view of line 43-43 of a terahertz device.

[0061] Figure 44 It is used for explanation Figure 35 A cross-sectional view showing the arrangement of the conductive parts of a terahertz device.

[0062] Figure 45 This is a magnified view of part of the antenna substrate.

[0063] Figure 46 This is a plan view of the terahertz device according to the third embodiment.

[0064] Figure 47 View from above Figure 46 A three-dimensional view of the antenna substrate of a terahertz device.

[0065] Figure 48 yes Figure 47 A plan view of the antenna substrate.

[0066] Figure 49 It indicates composition Figure 48 A plan view of a single antenna substrate.

[0067] Figure 50 It constitutes Figure 48 A plan view of another separate antenna substrate.

[0068] Figure 51 It constitutes Figure 48 A plan view of another type of separate antenna substrate.

[0069] Figure 52 yes Figure 46 A cross-sectional view of line 52-52 of a terahertz device.

[0070] Figure 53 yes Figure 46 A cross-sectional view of line 53-53 of a terahertz device.

[0071] Figure 54 It is used for explanation Figure 46 A cross-sectional view showing the arrangement of the conductive parts of a terahertz device.

[0072] Figure 55 yes Figure 54 A magnified view of the conductive part.

[0073] Figure 56 This is a magnified view of part of the antenna substrate.

[0074] Figure 57 This is a cross-sectional view showing a modified example of the terahertz device according to the first embodiment.

[0075] Figure 58 This is a cross-sectional view showing a modified example of the terahertz device in the second embodiment.

[0076] Figure 59 This is a cross-sectional view showing a modified example of the terahertz device in the second embodiment.

[0077] Figure 60 This is a cross-sectional view showing a modified example of the terahertz device in the second embodiment.

[0078] Figure 61 This is a cross-sectional view showing a modified example of the terahertz device in the second embodiment.

[0079] Figure 62 This is a cross-sectional view showing a modified example of the terahertz device according to the first embodiment.

[0080] Figure 63 This is an enlarged cross-sectional view showing a portion of a modified example of the terahertz device of the first embodiment.

[0081] Figure 64 This is an enlarged cross-sectional view showing a portion of a modified example of the terahertz device in the second embodiment.

[0082] Figure 65 This is an enlarged cross-sectional view showing a portion of a modified example of the terahertz device in the second embodiment.

[0083] Figure 66 This is a schematic front view of a terahertz element representing a modified example.

[0084] Figure 67 This is a plan view of the antenna substrate, showing a modification of the terahertz device according to the first embodiment.

[0085] Figure 68 yes Figure 67 A cross-sectional view of the antenna substrate along line 68-68.

[0086] Figure 69 This is a plan view of the antenna substrate, showing a modification of the terahertz device according to the first embodiment.

[0087] Figure 70 yes Figure 69 A cross-sectional view of the antenna substrate along line 70-70.

[0088] Figure 71 This is a plan view of the antenna substrate, showing a modification of the terahertz device in the second embodiment.

[0089] Figure 72 This is a plan view of the antenna substrate, showing a variation of the terahertz device in the third embodiment.

[0090] Figure 73 This is a plan view of the antenna substrate for a modified terahertz device.

[0091] Figure 74 It has Figure 73 A plan view of a terahertz device with a modified antenna substrate.

[0092] Figure 75 This is a cross-sectional view of a modified example of the terahertz device in the first embodiment. Detailed Implementation

[0093] Hereinafter, embodiments of the terahertz device will be described with reference to the accompanying drawings. The embodiments shown below are illustrative of structures or methods for embodying the technical concept; the materials, shapes, structures, arrangements, and dimensions of the constituent components are not limited to those described below. Various modifications can be made to the following embodiments. Furthermore, regarding the accompanying drawings, some parts are shown schematically for ease of illustration.

[0094] In this invention, the term "A formed on B" includes, unless otherwise specified, a structure in which A is directly formed on B; and a structure in which A is formed on B through an insert disposed between A and B. Similarly, the term "A disposed on B" includes, unless otherwise specified, a structure in which A is directly disposed on B; and a structure in which A is disposed on B through an insert disposed between A and B. Furthermore, "A and B overlap when viewed from a certain direction" includes, unless otherwise specified, a structure in which A completely overlaps B; and a structure in which A partially overlaps B.

[0095] [First Implementation Method]

[0096] (Structure of a terahertz device)

[0097] Reference Figures 1 to 15 The structure of the terahertz device 10 according to the first embodiment of the present invention will be described.

[0098] like Figure 1 and Figure 2 As shown, the terahertz device 10 of this embodiment is integrally formed into an elongated cuboid shape. The terahertz device 10 has a main surface 11, a back surface 12 (opposite to the main surface 11), and four side surfaces 13-16. The main surface 11 is an elongated rectangle having mutually orthogonal length and width directions. The terahertz device 10 of this embodiment receives electromagnetic waves from outside the device. Furthermore, the term "electromagnetic waves" includes either or both of light and radio waves.

[0099] For ease of explanation, in this embodiment, the length direction of the main surface 11 of the device is taken as the x-direction, and the width direction of the main surface 11 of the device is taken as the y-direction. Furthermore, the direction orthogonal to both the x-direction and the y-direction is taken as the z-direction. The z-direction can also be described as the height direction of the terahertz device 10.

[0100] The main surface 11 and the back surface 12 of the device are intersecting with respect to the z-direction, and in this embodiment, they are orthogonal with respect to the z-direction. The back surface 12 is the surface facing the opposite direction to the main surface 11 in the z-direction. That is, the main surface 11 and the back surface 12 can also be considered as the two end surfaces in the height direction of the terahertz device 10.

[0101] For ease of explanation, the direction in the z-direction from the back face 12 of the device toward the main face 11 of the device is referred to as "up". Up can be said to be a direction orthogonal to the main face 11 of the device and a direction from the main face 11 of the device toward the opposite side away from the back face 12 of the device. Alternatively, there may be a case where the four device sides 13 to 16 are referred to as the first device side 13, the second device side 14, the third device side 15, and the fourth device side 16.

[0102] The first device side surface 13 and the second device side surface 14 are the two end faces in the x-direction of the terahertz device 10, intersecting relative to the x-direction. In this embodiment, the first device side surface 13 and the second device side surface 14 are orthogonal relative to the x-direction, extending along the y-direction and z-direction, respectively. In this embodiment, the first device side surface 13 and the second device side surface 14 are respectively formed in a stepped shape. This will be explained later.

[0103] The third device side 15 and the fourth device side 16 are the two end faces in the y-direction of the terahertz device 10, intersecting relative to the y-direction. In this embodiment, the third device side 15 and the fourth device side 16 are orthogonal relative to the y-direction and extend along the x-direction and z-direction, respectively.

[0104] like Figure 3 As shown, the terahertz device 10 has a plurality of terahertz elements 20. The plurality of terahertz elements 20 includes terahertz element 20A, terahertz element 20B, and terahertz element 20C. Each terahertz element 20A to 20C has the same structure. In this embodiment, each terahertz element 20A to 20C is arranged at intervals in the y-direction while being aligned with each other in the x-direction. Terahertz element 20A is positioned in the y-direction closer to the third device side 15 than the center of the terahertz device 10, and terahertz element 20C is positioned in the y-direction closer to the fourth device side 16 than the center of the terahertz device 10. Terahertz element 20B is positioned in the y-direction between terahertz elements 20A and terahertz element 20C. In this embodiment, terahertz element 20B is positioned at the center of the terahertz device 10 in the y-direction. In this embodiment, each terahertz element 20A to 20C is positioned at the center of the terahertz device 10 in the x-direction.

[0105] For ease of explanation, the various terahertz elements 20A to 20C will be described as terahertz element 20 in the following description. Alternatively, when it is not necessary to distinguish between the various terahertz elements 20A to 20C, they will be described as multiple terahertz elements 20.

[0106] Terahertz element 20 is a device that converts electromagnetic waves in the terahertz band into electrical energy. Terahertz element 20 receives electromagnetic waves in the terahertz band (in other words, terahertz waves). The frequency of such electromagnetic waves in the terahertz band is, for example, 0.1Thz to 10Thz.

[0107] like Figures 4-6 As shown, the terahertz element 20 is a plate-shaped structure with the z-direction as its thickness direction. In this embodiment, the terahertz element 20 is a rectangular plate as a whole. In this embodiment, as... Figure 6 As shown, the terahertz element 20 appears as a square when viewed from the z-direction. However, the shape of the terahertz element 20 when viewed from the z-direction is not limited to a square; it can also be rectangular, circular, elliptical, or polygonal. Incidentally, if the focus is on the fact that the z-direction aligns with the thickness direction of the terahertz element 20, then "viewed from the z-direction" can also be described as "viewed from the thickness direction of the terahertz element 20." Furthermore, since the z-direction can be considered the height direction of the terahertz device 10, "viewed from the z-direction" can also be described as "viewed from the height direction of the terahertz device 10."

[0108] like Figure 4 and Figure 5 As shown, the element thickness D1, which is the z-axis dimension of the terahertz element 20, is set, for example, based on the frequency of the received electromagnetic wave. As an example, the element thickness D1 can be set to be thinner when the frequency of the electromagnetic wave is higher and thicker when the frequency of the electromagnetic wave is lower.

[0109] The terahertz element 20 has a main surface 21 and a back surface 22, which are surfaces that intersect with respect to the thickness direction of the terahertz element 20. The main surface 21 and the back surface 22 are surfaces that intersect with respect to the z-direction, and in this embodiment, they are orthogonal with respect to the z-direction. Therefore, the z-direction can also be described as a direction orthogonal to the main surface 21.

[0110] The main surface 21 and the back surface 22 of the component are rectangular in shape when viewed from the z-direction, for example, they are square. However, the shapes of the main surface 21 and the back surface 22 of the component when viewed from the z-direction are not limited to this and can be changed arbitrarily.

[0111] like Figure 4 and Figure 5 As shown, the terahertz element 20 of this embodiment is arranged with the back surface 22 facing upwards (in other words, the main surface 21 facing downwards). The main surface 21 is disposed closer to the back surface 12 of the device than the back surface 22, and the back surface 22 is disposed closer to the main surface 11 of the device than the main surface 21.

[0112] like Figure 6As shown, the terahertz element 20 has a first element side surface 23 and a second element side surface 24 as two end surfaces in the x-direction, and a third element side surface 25 and a fourth element side surface 26 as two end surfaces in the y-direction. The first element side surface 23 and the second element side surface 24 are surfaces that intersect with respect to the x-direction, and in this embodiment, they are orthogonal with respect to the x-direction. The third element side surface 25 and the fourth element side surface 26 are surfaces that intersect with respect to the y-direction, and in this embodiment, they are orthogonal with respect to the y-direction. The first element side surface 23 and the second element side surface 24 are orthogonal to the third element side surface 25 and the fourth element side surface 26.

[0113] like Figures 4-6 As shown, a receiving point P1 is provided for receiving electromagnetic waves. This receiving point P1 can also be described as a resonance point that resonates with electromagnetic waves in the terahertz band. In this embodiment, the receiving point P1 is a point (in other words, a region) for receiving electromagnetic waves. The receiving point P1 is formed on the main surface 21 of the element. The main surface 21 of the element having the receiving point P1 constitutes an active surface for receiving electromagnetic waves. The z-direction (in other words, the thickness direction of the terahertz element 20 or the height direction of the terahertz device 10) can also be described as a direction orthogonal to the surface on which the receiving point P1 is provided.

[0114] In this embodiment, the receiving point P1 is located at the center of the main surface 21 of the component. However, the position of the receiving point P1 is not limited to the center of the main surface 21 of the component, but is arbitrary.

[0115] like Figure 6 As shown, in this embodiment, the first vertical distance x1 between the second element side 24 (or the first element side 23) and the receiving point P1 can be, for example, (λ′). InP / 2)+((λ′ InP / 2)×N), where (N is an integer greater than or equal to 0: N = 0, 1, 2, ...).

[0116] Here, λ′ InP Let λ′ be the effective wavelength of the electromagnetic wave propagating inside the terahertz element 20. When the refractive index of the terahertz element 20 is set to n1, c is the speed of light, and fc is the center frequency of the electromagnetic wave, λ′ is... InP It is (1 / n1)×(c / fc). fc can be said to be the target frequency of the terahertz element 20. In addition, fc can be the highest output frequency among the electromagnetic waves received by the terahertz element 20.

[0117] Details will be described later. Since the refractive index n1 of the element is higher than the refractive index n2 of the dielectric 50 surrounding the terahertz element 20, the electromagnetic waves received by the terahertz element 20 are reflected at the free end of the second element side 24. Thus, by setting the first vertical distance x1 as described above, the terahertz element 20 itself is designed as a resonator (first resonator) in the terahertz device 10.

[0118] Similarly, the second vertical distance y1 between the fourth element side 26 (or the third element side 25) and the receiving point P1 can be, for example, (λ′). InP / 2)+((λ′ InP / 2)×N), where (N is an integer greater than or equal to 0: N = 0, 1, 2, ...).

[0119] Furthermore, the vertical distances x1 and y1, if calculated using the above formulas, can be different values ​​for each of the component sides 23, 24, 25, and 26. For example, the first vertical distance x1 between the second component side 24 and the receiving point P1 and the first vertical distance between the first component side 23 and the receiving point P1 can be different. Similarly, the second vertical distance y1 between the fourth component side 26 and the receiving point P1 and the second vertical distance between the third component side 25 and the receiving point P1 can also be different.

[0120] like Figure 7 and Figure 8 As shown, the terahertz element 20 includes an element substrate 31, a driving element 32, a first element conductive layer 33, and a second element conductive layer 34.

[0121] The component substrate 31 is made of semiconductor and has semi-insulating properties. The semiconductor constituting the component substrate 31 is, for example, InP (indium phosphide).

[0122] The refractive index n1 of the element is the refractive index (absolute refractive index) of the element substrate 31. When the element substrate 31 is InP, the refractive index n1 of the element is approximately 3.4.

[0123] In this embodiment, the component substrate 31 is rectangular, for example, square when viewed from the z-direction. The main surface 21 and the back surface 22 of the component are the main surface and back surface of the component substrate 31, and the two side surfaces 23 to 26 of the component are the side surfaces of the component substrate 31.

[0124] The active element 32 performs the conversion of electromagnetic waves in the terahertz band into electrical energy. The active element 32 is formed on the element substrate 31. In this embodiment, the active element 32 is disposed at the center of the main surface 21 of the element. The receiving point P1 can also be described as the position where the active element 32 is disposed.

[0125] The active element 32 is typically a resonant tunneling diode (RTD). However, it is not limited to this; the active element 32 can also be, for example, a tunnel injection transit time diode, an impact ionization avalanche transit time diode, a GaAs-type field-effect transistor (FET), a GaN-type FET, a high electron mobility transistor (HEMT), or a hetero junction bipolar transistor (HBT).

[0126] This describes an example of how the active element 32 is implemented.

[0127] like Figure 8 As shown, a semiconductor layer 41a is formed on the component substrate 31. The semiconductor layer 41a is formed, for example, from GaInAs. The semiconductor layer 41a is doped with an n-type impurity at a high concentration.

[0128] A GaInAs layer 42a is stacked on the semiconductor layer 41a. The GaInAs layer 42a is doped with n-type impurities. For example, the impurity concentration of the GaInAs layer 42a is lower than that of the semiconductor layer 41a.

[0129] A GaInAs layer 43a is stacked on top of GaInAs layer 42a. GaInAs layer 43a is free of doping.

[0130] An AlAs layer 44a is stacked on the GaInAs layer 43a, an InGaAs layer 45 is stacked on the AlAs layer 44a, and an AlAs layer 44b is stacked on the InGaAs layer 45. These AlAs layers 44a, InGaAs layers 45, and AlAs layers 44b constitute the RTD section.

[0131] An undoped GaInAs layer 43b is stacked on top of the AlAs layer 44b. An n-type doped GaInAs layer 42b is stacked on top of the GaInAs layer 43b. A GaInAs layer 41b is stacked on top of the GaInAs layer 42b. The GaInAs layer 41b is highly doped with n-type impurities. For example, the impurity concentration in the GaInAs layer 41b is higher than that in the GaInAs layer 42b.

[0132] Furthermore, the specific structure of the active element 32 can be arbitrary, as long as it is capable of receiving electromagnetic waves (or generating both). In other words, it can be said that the active element 32 is simply a component that receives electromagnetic waves in the terahertz band.

[0133] like Figure 4 and Figure 5 As shown, in this embodiment, an element reflective layer 35 for reflecting electromagnetic waves is formed on the back surface 22 of the element. Electromagnetic waves incident on the terahertz element 20 above the receiving point P1 (active element 32) are reflected downwards by the element reflective layer 35.

[0134] Here, the component thickness D1 can be set such that the resonance condition of the electromagnetic wave is met. Specifically, when the component reflective layer 35 is formed, because the electromagnetic wave undergoes fixed-end reflection at the interface between the component back surface 22 and the component reflective layer 35, the phase is offset by π. Considering this, the component thickness D1 in this embodiment can be set to (λ′ InP / 4)+(λ′ InP / 4)×N (N is an integer greater than or equal to 0: N = 0, 1, 2, ...). By setting the element thickness D1 as described above, a standing wave can be excited inside the terahertz element 20. However, the element thickness D1 is not limited to the above and can be changed arbitrarily.

[0135] like Figure 7 As shown, a first conductive layer 33 and a second conductive layer 34 are formed on the main surface 21 of the element. The first conductive layer 33 and the second conductive layer 34 each have a metallic stacked structure. For example, the stacked structure of the first conductive layer 33 and the second conductive layer 34 may be a structure consisting of stacked Au (gold), Pd (palladium), and Ti (titanium). Alternatively, the stacked structure of the first conductive layer 33 and the second conductive layer 34 may be a structure consisting of stacked Au and Ti. Both the first conductive layer 33 and the second conductive layer 34 are formed by vacuum evaporation or sputtering, etc.

[0136] like Figure 6 As shown, the component conductive layers 33 and 34 include: pads 33a and 34a that are spaced apart from each other in a predetermined direction (the y-direction in this embodiment) across the receiving point P1 (active element 32); and component conductive portions 33b and 34b extending from the pads 33a and 34a toward the active element 32. In the following description, pad 33a may be referred to as the first pad 33a, pad 34a as the second pad 34a, component conductive portion 33b as the first component conductive portion 33b, and component conductive portion 34b as the second component conductive portion 34b.

[0137] Pads 33a and 34a extend, for example, in a direction orthogonal to the relative directions of the two pads 33a and 34a (the x-direction in this embodiment). Pads 33a and 34a are rectangular shapes having a length direction and a width direction, respectively, when viewed from, for example, the z-direction. Specifically, pads 33a and 34a are rectangular shapes with the x-direction as the length direction and the y-direction as the width direction, respectively.

[0138] When viewed from the z-direction, pads 33a and 34a are positioned in a location that does not overlap with the receiving point P1. For example, pads 33a and 34a are positioned on either side of the receiving point P1 (in other words, the active element 32) in the y-direction, and in this embodiment, they are positioned closer to the component side 25 and 26 than the receiving point P1.

[0139] The conductive portions 33b and 34b are, for example, elongated shapes extending in the y-direction. The length of the conductive portions 33b and 33b in the x-direction is shorter than the length of the pads 33a and 34a in the x-direction.

[0140] like Figure 8 As shown, the front portions 33ba and 34ba of the element conductive portions 33b and 34b overlap with the active element 32 when viewed from the z-direction and are electrically connected to the active element 32. Specifically, the front portion 33ba of the first element conductive portion 33b is located on the GaInAs layer 41b and is in contact with the GaInAs layer 41b.

[0141] Furthermore, semiconductor layer 41a is more inclined toward the second pad 34a in the y-direction than other layers such as GaInAs layer 42a (see reference). Figure 6 The second element conductive portion 34b extends into the semiconductor layer 41a, specifically the portion where the GaInAs layer 42a and the like are not stacked. Thus, the active element 32 is connected to the two conductive layers 33 and 34 (in other words, the two pads 33a and 34a). Furthermore, the second element conductive portion 34b is spaced apart from the other layers, such as the GaInAs layer 42a, in the x-direction.

[0142] Although the illustration is omitted, with Figure 8 In contrast, a GaInAs layer highly doped with n-type impurities can also be inserted between the GaInAs layer 41b and the front end 33ba of the first element conductive portion 33b. This allows for better contact between the first element conductive layer 33 and the GaInAs layer 41b.

[0143] like Figure 4 and Figure 5 As shown, the terahertz device 10 includes, for example, a dielectric body 50 as a holding member, an antenna substrate 70, for example, a reflective film 82 as a reflector, and a gas space 92.

[0144] The dielectric body 50 is made of a dielectric material that is permeable to electromagnetic waves received by the terahertz element 20. In this embodiment, the dielectric body 50 is made of a resin material, for example, epoxy resin (e.g., glass epoxy resin). The dielectric body 50 has insulating properties. Furthermore, the dielectric body 50 can be any color, such as black.

[0145] The refractive index (absolute refractive index) of the dielectric body 50, n2, is lower than the refractive index of the element, n1. For example, the refractive index n2 is 1.55. Furthermore, the dielectric body 50 can be a single-layer structure or a multi-layer structure. That is, one or more interfaces can be formed within the dielectric body 50.

[0146] like Figures 3-5 As shown, the dielectric body 50 surrounds each of the plurality of terahertz elements 20. In this embodiment, the dielectric body 50 surrounds the entirety of each terahertz element 20A, 20B, 20C, covering the main surface 21, back surface 22, and side surfaces 23-26 of each terahertz element 20A, 20B, 20C (see reference). Figure 6 ).

[0147] The main surface 21, back surface 22, and side surfaces 23-26 of each terahertz element 20A, 20B, and 20C are in contact with the dielectric body 50. That is, in this embodiment, the dielectric body 50 surrounds each terahertz element 20A, 20B, and 20C in such a way that no gaps are created between the dielectric body 50 and each terahertz element 20A, 20B, and 20C. In other words, the dielectric body 50 seals each terahertz element 20A, 20B, and 20C.

[0148] The dielectric body 50 is, for example, formed as a plate with the z-direction as its thickness direction. Specifically, such as... Figure 3 As shown, the dielectric body 50 is a rectangular plate with the y-direction as the length direction and the x-direction as the width direction.

[0149] like Figure 4 and Figure 5 As shown, the dielectric body 50 has a dielectric main surface 51 and a dielectric back surface 52, which are surfaces intersecting the z-direction. The dielectric main surface 51 and the dielectric back surface 52 are, for example, orthogonal with respect to the z-direction. The dielectric main surface 51 faces downward. The dielectric back surface 52 is the surface opposite to the dielectric main surface 51 and faces upward. In this embodiment, the dielectric back surface 52 constitutes the device main surface 11.

[0150] like Figure 3As shown, the dielectric body 50 has a first dielectric side surface 53 and a second dielectric side surface 54 as two end surfaces in the x-direction, and a third dielectric side surface 55 and a fourth dielectric side surface 56 as two end surfaces in the y-direction. Each dielectric side surface 53 to 56 constitutes a part of the device side surfaces 13 to 16. In this embodiment, the first dielectric side surface 53 and the second dielectric side surface 54 are orthogonal to the third dielectric side surface 55 and the fourth dielectric side surface 56.

[0151] like Figure 4 and Figure 5 As shown, the terahertz element 20 is disposed within the dielectric body 50 with its main surface 21 facing the dielectric main surface 51. The terahertz element 20 is positioned between the dielectric main surface 51 and the dielectric back surface 52. In this embodiment, the length of the dielectric body 50 in the z-direction, i.e., the dielectric thickness D2, is set to satisfy the resonance condition of the electromagnetic waves received by the terahertz element 20. More specifically, the dielectric thickness D2 can be (λ′ R / 2)+(λ′ R / 2)×N (N is an integer greater than or equal to 0: N = 0, 1, 2, ...). λ′ R The effective wavelength of the electromagnetic wave propagating in the dielectric body 50 is, for example, (1 / n2)×(c / fc). Furthermore, the dielectric thickness D2 can also be described as the distance between the dielectric main surface 51 and the dielectric back surface 52 in the z-direction.

[0152] In this embodiment, the dielectric body 50 and the antenna substrate 70 are separate. In other words, the dielectric body 50 and the antenna substrate 70 are formed independently. The antenna substrate 70 may be made of the same material as the dielectric body 50, or it may be made of a different material.

[0153] like Figure 4 and Figure 5 As shown, the antenna substrate 70 is disposed on the dielectric main surface 51 side of the dielectric body 50. The antenna substrate 70 is positioned relative to the dielectric body 50 in the z-direction. The z-direction can be considered as the relative direction between the antenna substrate 70 and the dielectric body 50.

[0154] Here, the dielectric body 50, viewed in the z-direction, has protrusions 61 and 62 that protrude laterally from the antenna substrate 70. Specifically, in this embodiment, the dielectric body 50 is formed to be longer than the antenna substrate 70 in the x-direction. Therefore, the protrusions 61 and 62 protrude to both sides of the antenna substrate 70 in the x-direction. The two protrusions 61 and 62 are disposed on both sides of the antenna substrate 70 in the x-direction, and are spaced apart in the x-direction. The terahertz element 20 is disposed between the two protrusions 61 and 62.

[0155] In this embodiment, the length of the dielectric body 50 in the y-direction is set to be the same as the length of the antenna substrate 70 in the y-direction. That is, the dielectric body 50 does not protrude relative to the antenna substrate 70 in the y-direction. In addition, the length of the antenna substrate 70 in the z-direction is set to be longer than the dielectric thickness D2.

[0156] Next, the antenna substrate 70 will be explained.

[0157] like Figure 9 As shown, the antenna substrate 70 in this embodiment is, for example, an elongated cuboid shape. The length direction of the antenna substrate 70 is the same as the length direction of the terahertz device 10, and the width direction of the antenna substrate 70 is the same as the width direction of the terahertz device 10.

[0158] The antenna substrate 70 is formed, for example, of an insulating material. Specifically, the antenna substrate 70 is formed of a dielectric material, such as a synthetic resin like epoxy resin. For example, glass epoxy resin can be used as the epoxy resin. However, the material of the antenna substrate 70 is not limited to this and can be arbitrary, for example, it can be Si, Teflon (registered trademark), glass, etc. Furthermore, the color of the antenna substrate 70 can be any color, such as black.

[0159] The antenna substrate 70 has a main substrate surface 71T, a back substrate surface 72T opposite to the main substrate surface 71T, and four side substrate surfaces 73T to 76T. The main substrate surface 71T and the back substrate surface 72T are both elongated rectangles with mutually orthogonal length and width directions. In this embodiment, the antenna substrate 70 is arranged such that the length direction of the main substrate surface 71T and the back substrate surface 72T is along the y-direction and the width direction is along the x-direction. Here, the four side substrate surfaces 73T to 76T may be referred to as the first side substrate surface 73T, the second side substrate surface 74T, the third side substrate surface 75T, and the fourth side substrate surface 76T.

[0160] The main surface 71T and the back surface 72T of the substrate are surfaces that intersect with respect to the z-direction, and in this embodiment, they are orthogonal with respect to the z-direction. The back surface 72T of the substrate is the surface facing the opposite side to the main surface 71T of the substrate in the z-direction. Figure 4 and Figure 5 As shown, the substrate main surface 71T faces the same side as the device main surface 11, and the substrate back surface 72T faces the same side as the device back surface 12. The substrate main surface 71T is opposite to the dielectric main surface 51. The substrate back surface 72T constitutes the device back surface 12. In this embodiment, the substrate main surface 71T and the substrate back surface 72T are, for example, the same shape. However, this is not a limitation, and the substrate main surface 71T and the substrate back surface 72T may have different shapes.

[0161] like Figure 4 and Figure 5 As shown, a dielectric body 50 is mounted on the substrate main surface 71T. That is, the substrate main surface 71T is the surface facing the dielectric main surface 51 of the dielectric body 50, or the surface on which the dielectric body 50 is mounted. The substrate main surface 71T is formed smaller in the x-direction relative to the dielectric main surface 51. Therefore, a portion of the dielectric main surface 51 protrudes beyond the substrate main surface 71T in the x-direction. On the other hand, the length of the substrate main surface 71T in the y-direction is set to be the same as the length of the dielectric main surface 51 in the y-direction.

[0162] The first base side surface 73T and the second base side surface 74T are the two end surfaces in the x-direction. The first base side surface 73T and the second base side surface 74T are surfaces that intersect with respect to the x-direction, and are orthogonal with respect to the x-direction in this embodiment.

[0163] The first substrate side surface 73T constitutes the first device side surface 13. Specifically, the first device side surface 13 is composed of a first dielectric side surface 53 and a first substrate side surface 73T. The first dielectric side surface 53 is disposed laterally than the first substrate side surface 73T, in other words, disposed in a direction away from the terahertz element 20. Therefore, the first device side surface 13 is stepped, with a portion of the dielectric main surface 51 exposed as a step surface between the first dielectric side surface 53 and the first substrate side surface 73T. That is, the dielectric main surface 51 has a first protruding surface 51a that protrudes laterally from the antenna substrate 70 (in other words, the first substrate side surface 73T). The first protruding surface 51a is the portion of the dielectric main surface 51 corresponding to the first protrusion 61.

[0164] The second substrate side surface 74T constitutes the second device side surface 14. Specifically, the second device side surface 14 is composed of a second dielectric side surface 54 and a second substrate side surface 74T. The second dielectric side surface 54 is disposed laterally than the second substrate side surface 74T, in other words, disposed in a direction away from the terahertz element 20. Therefore, the second device side surface 14 is stepped, and a portion of the dielectric main surface 51 is exposed as a step surface between the second dielectric side surface 54 and the second substrate side surface 74T. That is, the dielectric main surface 51 has a second protruding surface 51b that protrudes laterally from the antenna substrate 70 (in other words, the second substrate side surface 74T). The second protruding surface 51b is the portion of the dielectric main surface 51 that corresponds to the second protrusion 62.

[0165] like Figure 9 and Figure 10 As shown, the third base side surface 75T and the fourth base side surface 76T are the two end surfaces in the y-direction. The third base side surface 75T and the fourth base side surface 76T are surfaces that intersect with respect to the y-direction, and are orthogonal with respect to the y-direction in this embodiment.

[0166] like Figure 12As shown, the third substrate side surface 75T constitutes the third device side surface 15. Specifically, the third device side surface 15 is composed of the third dielectric side surface 55 and the third substrate side surface 75T. In this embodiment, the third dielectric side surface 55 and the third substrate side surface 75T are coplanar. Therefore, the third device side surface 15 becomes a flat surface without steps.

[0167] The fourth substrate side surface 76T constitutes the fourth device side surface 16. Specifically, the fourth device side surface 16 is composed of the fourth dielectric side surface 56 and the fourth substrate side surface 76T. In this embodiment, the fourth dielectric side surface 56 and the fourth substrate side surface 76T are coplanar. Therefore, the fourth device side surface 16 becomes a flat surface without steps.

[0168] like Figure 9 and Figure 10 As shown, the antenna substrate 70 is composed of multiple individual antenna substrates combined together. In this embodiment, the antenna substrate 70 is composed of three individual antenna substrates 70A, 70B, and 70C combined together. In this embodiment, as... Figure 9 and Figure 10 As shown, the individual antenna substrates 70A, 70B, and 70C are arranged in a single row along the y-direction. Additionally, as... Figure 10 As shown, individual antenna substrates 70A and 70C have the same structure, while individual antenna substrate 70B has a different structure from individual antenna substrates 70A and 70C. That is, antenna substrate 70 is composed of a combination of two types of antenna substrates.

[0169] like Figure 12 As shown, the individual antenna substrate 70A is arranged opposite to the terahertz element 20A in the thickness direction (z-direction). The individual antenna substrate 70B is arranged opposite to the terahertz element 20B in the thickness direction (z-direction). The individual antenna substrate 70C is arranged opposite to the terahertz element 20C in the thickness direction (z-direction). In this embodiment, each individual antenna substrate 70A to 70C is arranged below each terahertz element 20A to 20C.

[0170] like Figure 9As shown, each of the individual antenna substrates 70A to 70C has a main surface 71 and a back surface 72, which are surfaces intersecting the z-direction. The main surface 71 and the back surface 72 are respectively surfaces intersecting the z-direction, and in this embodiment, they are orthogonal to the z-direction. The main surface 71 and the back surface 72 are, for example, rectangular (e.g., square). When the individual antenna substrates 70A to 70C are combined, the main surface 71 and the back surface 72 of the individual antenna substrates 70A to 70C constitute the main surface 71T and the back surface 72T of the antenna substrate 70. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, of the same shape. However, this is not a limitation, and the main surface 71 and the back surface 72 may also have different shapes.

[0171] like Figure 10 As shown, the individual antenna substrates 70A to 70C each have a first substrate side surface 73, a second substrate side surface 74, a third substrate side surface 75, and a fourth substrate side surface 76. These substrate side surfaces 73 to 76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each substrate side surface 73 to 76 is a surface orthogonal to the relative directions of the substrate main surface 71 and the substrate back surface 72. Each substrate side surface 73 to 76 connects the substrate main surface 71 and the substrate back surface 72 (see reference). Figure 9 The individual antenna substrates 70A to 70C are connected together. Furthermore, the base side surfaces 73 to 76 of each individual antenna substrate 70A to 70C are correspondingly determined to the base side surfaces 73T to 76T of the antenna substrate 70 in its combined state. That is, the individual antenna substrates 70A and 70C have the same shape, but the positions of base side surfaces 73 and 74 are reversed, and the positions of base side surfaces 75 and 76 are reversed.

[0172] The first base side surface 73 and the second base side surface 74 of the individual antenna substrates 70A to 70C are respectively the two end faces of the individual antenna substrates 70A to 70C in the x-direction. These first base side surfaces 73 and second base side surfaces 74 are respectively surfaces that intersect with respect to the x-direction, and are orthogonal with respect to the x-direction in this embodiment. The respective first base side surface 73 and second base side surface 74 of the individual antenna substrates 70A to 70C constitute the first base side surface 73T and the second base side surface 74T of the antenna substrate 70.

[0173] The third base side surface 75 and the fourth base side surface 76 of the individual antenna substrates 70A to 70C are the two end surfaces of the individual antenna substrates 70A to 70C in the y-direction. These third base side surfaces 75 and fourth base side surfaces 76 are surfaces that intersect with respect to the y-direction, and are orthogonal with respect to the y-direction in this embodiment.

[0174] Individual antenna substrates 70A to 70C are rectangular in shape, having both length and width directions when viewed in the z-direction. Individual antenna substrates 70A to 70C are arranged such that their length is along the x-direction and their width is along the y-direction. In this embodiment, the lengths of individual antenna substrates 70A to 70C in the x-direction are equal. The length of individual antenna substrate 70B in the y-direction is shorter than the lengths of individual antenna substrates 70A and 70B in the y-direction.

[0175] In this embodiment, individual antenna substrates 70A to 70C are arranged such that the fourth base side surface 76 of individual antenna substrate 70A faces the third base side surface 75 of individual antenna substrate 70B in the y-direction, and the fourth base side surface 76 of individual antenna substrate 70B faces the third base side surface 75 of individual antenna substrate 70C. That is, the third base side surface 75 of individual antenna substrate 70A and the fourth base side surface 76 of individual antenna substrate 70C constitute the two end faces in the y-direction of antenna substrate 70. In other words, the third base side surface 75 of individual antenna substrate 70A constitutes the third base side surface 75T of antenna substrate 70, and the fourth base side surface 76 of individual antenna substrate 70C constitutes the fourth base side surface 76T of antenna substrate 70. In this embodiment, individual antenna substrates 70A and 70B are fixed, for example, using an adhesive, and individual antenna substrates 70B and 70C are fixed, for example, using an adhesive. That is, the fourth base side 76 of the individual antenna base 70A is joined to the third base side 75 of the individual antenna base 70B by a bonding agent, and the fourth base side 76 of the individual antenna base 70B is joined to the third base side 75 of the individual antenna base 70C by a bonding agent.

[0176] like Figure 9 As shown, the antenna substrate 70 has a plurality of antenna recesses 80. In this embodiment, individual antenna substrate 70A has an antenna recess 80A, individual antenna substrate 70B has an antenna recess 80B, and individual antenna substrate 70C has an antenna recess 80C. That is, each individual antenna substrate 70 has one antenna recess 80. Figure 9 As can be seen, the shapes of antenna recesses 80A and 80C are different from the shape of antenna recess 80B. Furthermore, in the following description, antenna recess 80 will be used to explain matters common to antenna recesses 80A, 80B, and 80C, i.e., when it is not necessary to distinguish between antenna recesses 80A, 80B, and 80C.

[0177] like Figure 4 and Figure 5As shown, the antenna recess 80 is recessed downwards in the direction from the main surface 71T of the substrate to the back surface 72T of the substrate. In other words, it can be said that the antenna recess 80 is recessed from the main surface 71T of the substrate in a direction away from the dielectric body 50 (or the main surface 51 of the dielectric), or in a direction away from the terahertz element 20. Figure 4 and Figure 5 As shown, in this embodiment, in a cross-sectional view of the antenna substrate 70 cut along the x and z directions, the antenna recess 80 is bent in a convex manner toward the device back surface 12. The antenna recess 80 opens upwards.

[0178] like Figure 4 and Figure 5 As shown, the antenna recess 80 has an antenna surface 81 that faces the terahertz element 20 across the dielectric body 50 and the gas space 92. In this embodiment, as... Figure 11 As shown, antenna recess 80A has antenna surface 81A, antenna recess 80B has antenna surface 81B, and antenna recess 80C has antenna surface 81C. Antenna surfaces 81A to 81C are formed corresponding to the antenna shape. Specifically, as... Figure 12 As shown, antenna surface 81A is curved in a concave manner away from terahertz element 20A, antenna surface 81B is curved in a concave manner away from terahertz element 20B, and antenna surface 81C is curved in a concave manner away from terahertz element 20C. Figure 9 As shown, antenna surfaces 81A to 81C are respectively bent into a mortar shape, for example, to form part of the shape of a parabolic antenna. Furthermore, in the following description, antenna surface 81 will be used in the description of common aspects of antenna surfaces 81A to 81C, that is, in the description where it is not necessary to distinguish between antenna surfaces 81A to 81C.

[0179] like Figure 10 As shown, the openings of the antenna recesses 80A to 80C are respectively circularly shaped with a partial defect when viewed from above. That is, the openings of the antenna surfaces 81A to 81C are respectively circularly shaped with a partial defect when viewed from above. More specifically, in this embodiment, the openings of the antenna surfaces 81A to 81C are respectively circularly shaped with a partial defect at least one of the two opening ends of each of the antenna surfaces 81A to 81C in the arrangement direction of the antenna surfaces 81A to 81C.

[0180] Viewed from above, the opening of antenna surface 81A lacks one of its two opening ends in the y-direction, the opening end 81Aa closest to the fourth base side surface 76. Viewed from above, the opening end 81Aa is formed at the same position as the fourth base side surface 76 of the individual antenna base 70A. Viewed from above, the opening end 81Aa is a straight line extending along the x-direction.

[0181] Viewed from above, the opening of antenna surface 81B lacks both of its two opening ends 81Ba and 81Bb in the y-direction. Opening end 81Ba is the end of the opening of antenna surface 81B in the y-direction closer to the third base side surface 75, and opening end 81Bb is the end of the opening of antenna surface 81B in the y-direction closer to the fourth base side surface 76. Viewed from above, opening end 81Ba is formed at the same position as the third base side surface 75 of the individual antenna base 70B, and opening end 81Bb is formed at the same position as the fourth base side surface 76 of the individual antenna base 70B. Viewed from above, the two opening ends 81Ba and 81Bb are straight lines extending along the x-direction.

[0182] Viewed from above, the opening of antenna surface 81C lacks one of its two opening ends in the y-direction, the opening end 81Ca closest to the third base side surface 75. Viewed from above, opening end 81Ca is formed at the same position as the third base side surface 75 of the individual antenna base 70C. Viewed from above, opening end 81Ca is a straight line extending along the x-direction.

[0183] like Figure 10 As shown, when viewed from above, the diameters of antenna surface 81A, antenna surface 81B, and antenna surface 81C are equal.

[0184] The opening end 81Aa of antenna surface 81A is connected to the opening end 81Ba of antenna surface 81B, and the opening end 81Bb of antenna surface 81B is connected to the opening end 81Ca of antenna surface 81C. In this embodiment, the x-direction length of opening end 81Aa is equal to the x-direction length of opening end 81Ba, and the x-direction length of opening end 81Bb is equal to the x-direction length of opening end 81Ca. Furthermore, the x-direction lengths of opening end 81Ba and opening end 81Bb are equal to each other. That is, in this embodiment, the x-direction lengths of opening end 81Aa and opening end 81Ca are equal to each other.

[0185] like Figure 11 As shown, the opening 81Aa of antenna surface 81A is located below the base main surface 71 of the individual antenna substrate 70A (the base main surface 71T of antenna substrate 70). In the z-direction, the opening 81Aa of antenna surface 81A is aligned with the opening 81Ba of antenna surface 81B. The opening 81Ca of antenna surface 81C is located below the base main surface 71 of the individual antenna substrate 70C (the base main surface 71T of antenna substrate 70). In the z-direction, the opening 81Ca of antenna surface 81C is aligned with the opening 81Bb of antenna surface 81B. Furthermore, in the z-direction, the opening 81Ba of antenna surface 81B is aligned with the opening 81Bb. That is, in the z-direction, the opening 81Aa of antenna surface 81A is aligned with the opening 81Ca of antenna surface 81C.

[0186] Regarding the connection, the reflective film 82 will be explained.

[0187] The reflective film 82 is a reflective film that causes electromagnetic waves propagating in the antenna recess 80 to be reflected towards the terahertz element 20 corresponding to the antenna recess 80.

[0188] like Figure 11 As shown, a reflective film 82 is formed on the antenna surface 81. The reflective film 82 is formed of a material that reflects electromagnetic waves, such as a metal or alloy like Cu. The reflective film 82 can be a single layer or a multilayer structure. In this embodiment, the reflective film 82 is formed over the entire antenna surface 81. On the other hand, no reflective film 82 is formed on the main surface 71T of the substrate.

[0189] In this embodiment, the reflective film 82 includes a reflective film 82A formed on the antenna surface 81A, a reflective film 82B formed on the antenna surface 81B, and a reflective film 82C formed on the antenna surface 81C. In this embodiment, the reflective films 82A to 82C are integrally formed as a single component. Furthermore, in the following description, common aspects of the reflective films 82A to 82C will be explained; that is, in the description where it is not necessary to distinguish between the reflective films 82A to 82C, the reflective film 82 will be used.

[0190] In this embodiment, since a reflective film 82 is formed on the antenna surface 81, the reflective film 82 and the antenna surface 81 have approximately the same shape. That is, the reflective film 82A has approximately the same shape as the antenna surface 81A, the reflective film 82B has approximately the same shape as the antenna surface 81B, and the reflective film 82C has approximately the same shape as the antenna surface 81C. In other words, the reflective films 82A to 82C are respectively parabolic mirrors, bent into a mortar shape. In this embodiment, the side of the reflective film 82A opposite to the side that contacts the antenna surface 81A, that is, the side of the reflective film 82A facing the terahertz element 20A, corresponds to the "first reflecting surface". The side of the reflective film 82B opposite to the side that contacts the antenna surface 81B, that is, the side of the reflective film 82B facing the terahertz element 20B, corresponds to the "second reflecting surface". The side of the reflective film 82C opposite to the side that contacts the antenna surface 81C, that is, the side of the reflective film 82C facing the terahertz element 20C, corresponds to the "third reflecting surface".

[0191] The reflective films 82A to 82C are each bent in such a way that they bulge toward the back surface 12 of the device (the back surface 72 of the substrate of the individual antenna substrates 70A to 70C). The reflective films 82A to 82C each open in one direction (upper in this embodiment).

[0192] like Figure 12As shown, the reflective film 82 is opposite to the dielectric body 50 in the z-direction. In other words, the reflective film 82 is positioned opposite to the dielectric body 50. The electromagnetic waves reflected by the reflective film 82 are output to the receiving point P1. Specifically, the electromagnetic waves reflected by the reflective film 82A are output to the receiving point P1 of the terahertz element 20A. The electromagnetic waves reflected by the reflective film 82B are output to the receiving point P1 of the terahertz element 20B. The electromagnetic waves reflected by the reflective film 82C are output to the receiving point P1 of the terahertz element 20C.

[0193] The reflective film 82 is not disposed on the back side 22 of the component, but on the main surface 21 of the component where the receiving point P1 is located, opposite to the terahertz element 20 (main surface 21 of the component in this embodiment). In other words, the terahertz element 20 is disposed within the dielectric body 50 with the main surface 21 of the component facing the reflective film 82. Furthermore, if we are concerned with the positional relationship between the pads 33a, 34a and the reflective film 82, we can say that the pads 33a, 34a face the reflective film 82.

[0194] The reflective film 82 is configured, for example, such that its focal point becomes the receiving point P1. More specifically, as... Figure 12 As shown, multiple terahertz elements 20 are arranged corresponding to antenna surfaces 81A to 81C (reflective films 82A to 82C). Terahertz element 20A is arranged corresponding to antenna surface 81A (reflective film 82A), terahertz element 20B is arranged corresponding to antenna surface 81B (reflective film 82B), and terahertz element 20C is arranged corresponding to antenna surface 81C (reflective film 82C). In this case, reflective film 82A is arranged such that its focal point becomes the receiving point P1 of terahertz element 20A. Reflective film 82B is arranged such that its focal point becomes the receiving point P1 of terahertz element 20B. Reflective film 82C is arranged such that its focal point becomes the receiving point P1 of terahertz element 20C. In this embodiment, viewed from the z-direction, the center point P2 of the reflective film 82A coincides with the receiving point P1 of the terahertz element 20A, the center point P2 of the reflective film 82B coincides with the receiving point P1 of the terahertz element 20B, and the center point P2 of the reflective film 82C coincides with the receiving point P1 of the terahertz element 20C. In this embodiment, to align the receiving points P1 of the terahertz elements 20A to 20C in the z-direction, the center points P2 of the reflective films 82A to 82C are aligned in the z-direction.

[0195] Furthermore, let the vertical distance from the receiving point P1 to the reflective film 82 be a specified distance z1, and let the coordinate of the reflective film 82 in the z-direction be Z, and the position of the reflective film 82 in the x-direction be X. Then, the reflective film 82 satisfies Z = (1 / (4z1))X. 2The reflective film 82 can be bent in any way that meets the conditions. Furthermore, X is set to "0" at the center point P2. The same applies to the position of the reflective film 82 in the y-direction. However, the bending method of the reflective film 82 is not limited to this and can be changed arbitrarily.

[0196] The z-direction can also be described as the relative direction between the reflective film 82 and the terahertz element 20 (element main surface 21). Additionally, the z-direction can also be described as the relative direction between the center point P2 of the reflective film 82 and the receiving point P1. The specified distance z1 can also be described as the distance between the receiving point P1 and the position within the reflective film 82 corresponding to the center point P2.

[0197] Alternatively, the reflective film 82 can also be positioned at a location corresponding to the frequency of the electromagnetic wave received by the terahertz element 20, in a manner that resonates with the electromagnetic wave. Specifically, the distance z1 can be set in a way that satisfies the resonance condition of the electromagnetic wave received by the terahertz element 20.

[0198] like Figure 10 As shown, viewed from above, the openings of reflective films 82A-82C have the same shape as the openings of antenna surfaces 81A-81C. That is, viewed from above, the openings of reflective films 82A-82C are circular shapes that are missing at least one of the two opening ends of reflective films 82A-82C in the arrangement direction of reflective films 82A-82C.

[0199] Viewed from above, the opening of the reflective film 82A lacks the opening end 82Aa that overlaps with the opening end 81Aa of the antenna surface 81A. Viewed from above, the opening end 82Aa is a straight line extending along the x-direction.

[0200] Viewed from above, the opening of the reflective film 82B lacks the opening ends 82Ba and 82Bb that overlap with the two opening ends 81Ba and 81Bb of the antenna surface 81B. Viewed from above, the two opening ends 82Ba and 82Bb are straight lines extending along the x-direction.

[0201] Viewed from above, the opening of the reflective film 82C lacks the opening end 82Ca that overlaps with the opening end 81Ca of the antenna surface 81C. Viewed from above, the opening end 82Ca is a straight line extending along the x-direction.

[0202] Similar to antenna surfaces 81A to 81C, when viewed from above, the diameters of reflective film 82A, 82B, and 82C are equal.

[0203] The opening end 82Aa of reflective film 82A is connected to the opening end 82Ba of reflective film 82B, and the opening end 82Bb of reflective film 82B is connected to the opening end 82Ca of reflective film 82C. In this embodiment, the x-direction length of opening end 82Aa is equal to the x-direction length of opening end 82Ba. Furthermore, the x-direction length of opening end 82Ba is equal to the x-direction length of opening end 82Ca. Additionally, the x-direction length of opening end 82Ba is equal to the x-direction length of opening end 82Bb. That is, in this embodiment, the x-direction length of opening end 82Aa is equal to the x-direction length of opening end 82Ca.

[0204] like Figure 11 As shown, the opening end 82Aa of the reflective film 82A is located below the substrate main surface 71 of the individual antenna substrate 70A (the substrate main surface 71T of the antenna substrate 70). The z-direction position of the opening end 82Aa of the reflective film 82A is aligned with the z-direction position of the opening end 82Ba of the reflective film 82B. The opening end 82Ca of the reflective film 82C is located below the substrate main surface 71 of the individual antenna substrate 70C (the substrate main surface 71T of the antenna substrate 70). In the z-direction, the opening end 82Ca of the reflective film 82C is aligned with the opening end 82Bb of the reflective film 82B. Furthermore, in the z-direction, the opening end 82Ba of the reflective film 82B is aligned with the opening end 82Bb. That is, in the z-direction, the opening end 82Aa of the reflective film 82A is aligned with the opening end 82Ca of the reflective film 82C.

[0205] like Figure 10 As shown, viewed from above, the reflective film 82A is formed such that its center point P2 is located at a position different from the center of the individual antenna substrate 70A. In this embodiment, the center point P2 of the reflective film 82A, viewed from above, is the center of a partially missing circular reflective film 82A, which coincides with the center point of the antenna surface 81A. More specifically, viewed from above, the reflective film 82A is formed such that its center point P2 is at the center of the individual antenna substrate 70A in the x-direction. Viewed from above, the reflective film 82A is formed such that its center point P2 is offset towards the fourth substrate side 76 of the individual antenna substrate 70A in the y-direction. In other words, viewed from above, the center point P2 of the reflective film 82A is located closer to the individual antenna substrate 70B than the center of the individual antenna substrate 70A in the y-direction.

[0206] Viewed from above, the center point P2 of the reflective film 82A coincides with the center point of the antenna surface 81A, and the shape of the reflective film 82A is approximately the same as the shape of the antenna surface 81A. Therefore, viewed from above, the antenna surface 81A and the reflective film 82A are formed in such a way that the center point of the antenna surface 81A and the center of the individual antenna substrate 70A are at different positions.

[0207] Viewed from above, the portions of the two ends of the arc-shaped outer periphery connecting the reflective films 82A to 82C, which are arranged in the first direction (y-direction in this embodiment), are arc-shaped with a central angle of less than 180°. Here, the first direction is the direction intersecting the height direction (z-direction) of the terahertz device 10. In this embodiment, the first direction is orthogonal to the height direction of the terahertz device 10. In this embodiment, the portion of the arc-shaped outer periphery of the reflective film 82A that connects the end edge near the third base side surface 75 in the y-direction and the two ends of the opening end 82Aa in the x-direction, near the end edge near the first base side surface 73, is arc-shaped with a central angle θa1 of less than 180°. The portion of the arc-shaped outer periphery of the reflective film 82A that connects the end edge near the third base side surface 75 in the y-direction and the two ends of the opening end 82Aa in the x-direction, near the end edge near the second base side surface 74, is arc-shaped with a central angle θa2 of less than 180°. The central angles θa1 and θa2 are equal. Viewed from above, the reflective film 82A and the antenna surface 81A have approximately the same shape. Therefore, similar to the reflective film 82A, the portion of the two ends of the direction in which the antenna surfaces 81A to 81C are arranged in the arc-shaped outer periphery connecting the antenna surface 81A, i.e., the first direction, becomes an arc with a central angle of less than 180°.

[0208] Viewed from above, the size of the reflective film 82A along the direction in which the reflective films 82A-82C are arranged, i.e., the first direction, is smaller than the size of the reflective film 82A along a second direction different from the first direction. More specifically, viewed from above, the length of the reflective film 82A passing through the center point P2 in the first direction (y-direction in this embodiment) is shorter than the length of the reflective film 82A passing through the center point P2 in the second direction. Here, the second direction is, for example, the direction orthogonal to the first direction when viewed from above (x-direction in this embodiment). In this embodiment, viewed from above, the length LAY of the reflective film 82A in the y-direction passing through the center point P2 is shorter than the length LAX of the reflective film 82A in the y-direction passing through the center point P2. Here, the length LAX of the reflective film 82A passing through the center point P2 can be considered as the diameter of the reflective film 82A when viewed from above.

[0209] Furthermore, viewed from above, since the reflective film 82A and the antenna surface 81A have approximately the same shape, the relationship between the length of the antenna surface 81A in the x-direction and the length in the y-direction is the same as the relationship between the lengths of the reflective film 82A described above. That is, viewed from above, the length of the antenna surface 81A passing through the center point of the antenna surface 81A in the first direction (the direction in which the antenna surfaces 81A-81C are arranged) is shorter than the length of the antenna surface 81A passing through the center point of the antenna surface 81A in a second direction different from the first direction. Here, the second direction is, for example, a direction orthogonal to the first direction when viewed from above (the x-direction in this embodiment). In this case, the length of the antenna surface 81A passing through the center point of the antenna surface 81A in the second direction can be considered the diameter of the antenna surface 81A when viewed from above.

[0210] like Figure 11 As shown, when a section of the individual antenna substrate 70A is cut along the y and z directions using planes passing through the center point P2 of the reflective film 82A, the portion connecting the two ends of the reflective film 82A is formed into an arc shape with a central angle θz1 less than 180°. Similarly, when a section of the individual antenna substrate 70A is cut along the y and z directions using planes passing through the center point of the antenna surface 81A, the portion connecting the two ends of the antenna surface 81A is formed into an arc shape with a central angle less than 180°.

[0211] like Figure 10 As shown, viewed from above, the reflective film 82B is formed such that its center point P2 is aligned with the center of the individual antenna substrate 70B. In this embodiment, the center point P2 of the reflective film 82B, viewed from above, is the center of a partially missing circular reflective film 82B, which coincides with the center point of the antenna surface 81B.

[0212] Viewed from above, the center point P2 of the reflective film 82B coincides with the center point of the antenna surface 81B, and the shape of the reflective film 82B is approximately the same as the shape of the antenna surface 81B. Therefore, viewed from above, the antenna surface 81B and the reflective film 82B are similarly formed in that the center point of the antenna surface 81B is aligned with the center of the individual antenna substrate 70B.

[0213] Viewed from above, the portions of the two ends of the reflective films 82A to 82C in the direction of their arrangement in the first direction (y-direction in this embodiment) of the arc-shaped outer periphery connecting the reflective film 82B are arc-shaped with a central angle less than 180°. In this embodiment, in the arc-shaped outer periphery of the reflective film 82B, the portions of the two ends of the open end 82Ba in the x-direction near the first base side surface 73 and the portions of the two ends of the open end 82Bb in the x-direction near the first base side surface 73 are arc-shaped with a central angle θb1 less than 180°. In the arc-shaped outer periphery of the reflective film 82B, the portions of the two ends of the open end 82Ba in the x-direction near the second base side surface 74 and the portions of the two ends of the open end 82Bb in the x-direction near the second base side surface 74 are arc-shaped with a central angle θb2 less than 180°. The central angles θb1 and θb2 are equal. Furthermore, the central angles θb1 and θb2 are smaller than the central angles θa1 and θa2. Viewed from above, since the reflective film 82B and the antenna surface 81B have approximately the same shape, similarly to the reflective film 82B, the portions at both ends of the direction in which the antenna surfaces 81A to 81C are arranged in the arc-shaped outer periphery connecting the antenna surface 81A, i.e., the first direction (y direction in this embodiment), are arc-shaped with a central angle of less than 180°.

[0214] Viewed from above, the size of the reflective film 82B along the direction in which reflective films 82A-82C are arranged, i.e., the first direction, is smaller than the size of the reflective film 82B along the direction different from the first direction, i.e., the second direction. More specifically, viewed from above, the length of the reflective film 82B passing through the center point P2 in the first direction (y-direction in this embodiment) is shorter than the length of the reflective film 82B passing through the center point P2 in the second direction. Here, the second direction is, for example, the direction orthogonal to the first direction when viewed from above (x-direction in this embodiment). In this embodiment, viewed from above, the length LBY of the reflective film 82B in the y-direction passing through the center point P2 is shorter than the length LBX of the reflective film 82B in the y-direction passing through the center point P2. Here, the length LBX of the reflective film 82B passing through the center point P2 can be considered as the diameter of the reflective film 82A when viewed from above. That is, viewed from above, the length LBX of the reflective film 82B passing through the center point P2 is equal to the length LAX of the reflective film 82A passing through the center point P2.

[0215] Furthermore, viewed from above, since the reflective film 82B and the antenna surface 81B have approximately the same shape, the relationship between the length of the antenna surface 81B in the x-direction and the length in the y-direction is the same as the relationship between the lengths of the reflective film 82B described above. That is, viewed from above, the length of the antenna surface 81B passing through the center point of the antenna surface 81B in the first direction (y-direction in this embodiment), which is the direction in which the antenna surfaces 81A to 81C are arranged, is shorter than the length of the antenna surface 81B passing through the center point of the antenna surface 81B in a second direction different from the first direction. Here, the second direction is, for example, the direction orthogonal to the first direction when viewed from above (x-direction in this embodiment). In this case, the length of the antenna surface 81B passing through the center point of the antenna surface 81B in the second direction can be considered as the diameter of the antenna surface 81B when viewed from above. That is, viewed from above, the length of the antenna surface 81B in the second direction passing through the center point of the antenna surface 81B in the second direction is equal to the length of the antenna surface 81A in the second direction passing through the center point of the antenna surface 81A.

[0216] like Figure 11 As shown, when viewed by cutting a section of the individual antenna substrate 70B along the y and z directions using planes passing through the center point P2 of the reflective film 82B, the portions connecting the two end edges of the reflective film 82B are formed into arcs with a central angle θz2 less than 180°. In this embodiment, the central angle θz2 is smaller than the central angle θz1 of the reflective film 82A. Similarly, when viewed by cutting a section of the individual antenna substrate 70B along the y and z directions using planes passing through the center point of the antenna surface 81B, the portions connecting the two end edges of the antenna surface 81B are formed into arcs with a central angle less than 180°.

[0217] like Figure 10 As shown, viewed from above, the reflective film 82C is formed such that its center point P2 is located at a different position from the center of the individual antenna substrate 70C. In this embodiment, the center point P2 of the reflective film 82C, viewed from above, is the center of the partially missing circular reflective film 82C, which coincides with the center point of the antenna surface 81C. More specifically, viewed from above, the reflective film 82C is formed such that its center point P2 is at the center of the individual antenna substrate 70C in the x-direction. Viewed from above, the reflective film 82C is formed such that its center point P2 is offset towards the third substrate side 75 of the individual antenna substrate 70C in the y-direction. In other words, viewed from above, the center point P2 of the reflective film 82C is located closer to the individual antenna substrate 70B than the center of the individual antenna substrate 70C in the y-direction.

[0218] Since, when viewed from above, the center point P2 of the reflective film 82C coincides with the center point of the antenna surface 81C, and the shape of the reflective film 82C is approximately the same as the shape of the antenna surface 81C, when viewed from above, the antenna surface 81C and the reflective film 82C are similarly formed in that the center point of the antenna surface 81C is at a different position from the center of the individual antenna substrate 70C.

[0219] Viewed from above, the portions of the two ends of the reflective films 82A to 82C in the direction in which they are arranged (the y-direction in this embodiment) of the arc-shaped outer periphery connecting the reflective film 82C are arc-shaped with a central angle less than 180°. In this embodiment, the portion of the arc-shaped outer periphery of the reflective film 82C that connects the end edge near the fourth base side surface 76 in the y-direction and the two ends of the opening end 82Ca in the x-direction, near the first base side surface 73, is an arc-shaped with a central angle θc1 less than 180°. The portion of the arc-shaped outer periphery of the reflective film 82C that connects the end edge near the fourth base side surface 76 in the y-direction and the two ends of the opening end 82Ca in the x-direction, near the second base side surface 74, is an arc-shaped with a central angle θc2 less than 180°. The central angles θc1 and θc2 are equal. In this embodiment, the central angles θc1 and θc2 are equal to the central angles θa1 and θa2 of the reflective film 82A. Since the reflective film 82C and the antenna surface 81C have approximately the same shape when viewed from above, similarly to the reflective film 82C, the portions at both ends of the direction in which the antenna surfaces 81A to 81C are arranged in the arc-shaped outer periphery connecting the antenna surface 81C, i.e., the first direction (y direction in this embodiment), are arc-shaped with a central angle of less than 180°.

[0220] Viewed from above, the size of the reflective film 82C along the direction in which reflective films 82A-82C are arranged, i.e., the first direction, is smaller than the size of the reflective film 82B along a second direction different from the first direction. More specifically, viewed from above, the length of the reflective film 82C passing through the center point P2 in the first direction is shorter than the length of the reflective film 82C passing through the center point P2 in the second direction. Here, the second direction is, for example, the direction orthogonal to the first direction when viewed from above (the x-direction in this embodiment). In this embodiment, viewed from above, the length LCY of the reflective film 82C in the y-direction passing through the center point P2 is shorter than the length LCX of the reflective film 82C in the x-direction passing through the center point P2. Here, the length LCX of the reflective film 82C passing through the center point P2 can be considered as the diameter of the reflective film 82C when viewed from above. That is, the length LCX of the reflective film 82C passing through the center point P2 is equal to the length LAX of the reflective film 82A passing through the center point P2. In addition, the length LCY of the reflective film 82C is longer than the length LBY of the reflective film 82B. That is, the length LBY of the reflective film 82B is shorter than both the length LAY of the reflective film 82A and the length LCY of the reflective film 82B.

[0221] In this way, the lengths LAY to LCY of the reflective films 82A to 82C are shorter than the lengths LAX to LCX of the reflective films 82A to 82C. Therefore, it can also be said that the dimensions of the reflective films 82A to 82C along the first direction are smaller than the dimensions of the reflective films 82A to 82C along the second direction.

[0222] Furthermore, since the reflective film 82C and the antenna surface 81C have approximately the same shape when viewed from above, the relationship between the length of the antenna surface 81C in the x-direction and the length in the y-direction is the same as the relationship between the lengths of the reflective film 82C described above. That is, when viewed from above, the length of the antenna surface 81C passing through the center point of the antenna surface 81C in the first direction (y-direction in this embodiment), which is the direction in which the antenna surfaces 81A to 81C are arranged, is shorter than the length of the antenna surface 81C passing through the center point of the antenna surface 81C in a second direction different from the first direction. Here, the second direction is, for example, the direction orthogonal to the first direction when viewed from above (x-direction in this embodiment). In this case, the length of the antenna surface 81C passing through the center point of the antenna surface 81C in the second direction can be considered as the diameter of the antenna surface 81C when viewed from above. That is, the length of the antenna surface 81C passing through the center point of the antenna surface 81C in the second direction is equal to the length of the antenna surface 81A passing through the center point of the antenna surface 81A in the second direction.

[0223] like Figure 11As shown, when viewed by cutting a section of the individual antenna substrate 70C along the y and z directions using planes passing through the center point P2 of the reflective film 82C, the portions connecting the two ends of the reflective film 82C are formed into an arc shape with a central angle θz3 less than 180°. In this embodiment, the central angle θz3 is equal to the central angle θz1 of the individual antenna substrate 70A. Similarly, when viewed by cutting a section of the individual antenna substrate 70C along the y and z directions using planes passing through the center point of the antenna surface 81C, the portions connecting the two ends of the antenna surface 81C are formed into an arc shape with a central angle less than 180°.

[0224] like Figure 3 and Figure 12 As shown, the reflective film 82A is larger than the terahertz element 20A when viewed from the z-direction. Specifically, the reflective film 82A is larger than the terahertz element 20A in both the x and y directions. The length LAX of the reflective film 82A is set to be longer than the length of the terahertz element 20A in the x-direction, and the length LAY of the reflective film 82A is set to be longer than the length of the terahertz element 20A in the y-direction.

[0225] The reflective film 82B is larger than the terahertz element 20B when viewed from the z-direction. Specifically, the reflective film 82B is larger than the terahertz element 20B in both the x and y directions. The length LBX of the reflective film 82B is set to be longer than the length of the terahertz element 20B in the x-direction, and the length LBY of the reflective film 82B is set to be longer than the length of the terahertz element 20B in the y-direction.

[0226] The reflective film 82C is larger than the terahertz element 20C when viewed from the z-direction. Specifically, the reflective film 82C is larger than the terahertz element 20C in both the x and y directions. The length LCX of the reflective film 82C is set to be longer than the length of the terahertz element 20C in the x-direction, and the length LCY of the reflective film 82C is set to be longer than the length of the terahertz element 20C in the y-direction.

[0227] like Figure 10 As shown, viewed from above, the individual antenna substrate 70A has a peripheral wall portion 78A, which includes the portion of its opening surrounding the antenna recess 80A, excluding the portion that is missing from contact with the antenna recess 80B. Viewed from above, the individual antenna substrate 70B has a peripheral wall portion 78B, which includes the portion of its opening surrounding the antenna recess 80B, excluding the portion that is missing from contact with each of the antenna recesses 80A and 80C. Viewed from above, the individual antenna substrate 70C has a peripheral wall portion 78C, which includes the portion of its opening surrounding the antenna recess 80C, excluding the portion that is missing from contact with the antenna recess 80B.

[0228] Therefore, as Figure 3As shown, the distance between the receiving point P1 of terahertz element 20A and the receiving point P1 of terahertz element 20B in the y-direction, i.e., the inter-element distance DE1, is smaller than the diameters (lengths LAX and LBX) along the x-direction in antenna surfaces 81A and 81B. Furthermore, the distance between the receiving point P1 of terahertz element 20B and the receiving point P1 of terahertz element 20C in the y-direction, i.e., the inter-element distance DE2, is smaller than the diameters (lengths LBX and LCX) along the x-direction in antenna surfaces 81B and 81C.

[0229] like Figure 4 , Figure 5 and Figure 12 As shown, in this embodiment, the antenna substrate 70 and the dielectric body 50 are separate components and assembled and fixed in the z-direction. Specifically, the terahertz device 10 has a bonding layer 91 that serves as a fixing portion for fixing the dielectric body 50 and the antenna substrate 70. The bonding layer 91 is formed of, for example, an insulating material, or, for example, a resin-based adhesive. The bonding layer 91 is disposed between the substrate main surface 71T and the dielectric main surface 51, and is disposed along the periphery of the opening of the antenna recess 80A, the periphery of the opening of the antenna recess 80B, and the periphery of the opening of the antenna recess 80C, respectively.

[0230] The bonding layer 91 bonds and fixes the dielectric body 50 to the antenna substrate 70. That is, the dielectric body 50 and the antenna substrate 70 are assembled in the z-direction via the bonding layer 91. Thus, the dielectric body 50 and the antenna substrate 70 are modularized. As a result, the positional offset of the dielectric body 50 and the antenna substrate 70 in the direction orthogonal to the z-direction is limited by the bonding layer 91, so the relative positions of the terahertz elements 20A, 20B, 20C in the dielectric body 50 and the reflective films 82A, 82B, 82C of the antenna substrate 70 are not easily shifted.

[0231] In particular, in this embodiment, the inner peripheral end of the bonding layer 91 is positioned in the same plane as the surface of the reflective film 82 and is formed across the main surface 71T of the substrate and the end of the reflective film 82. That is, the bonding layer 91 is configured in a manner that does not protrude inward from the reflective film 82 (in other words, the terahertz element 20 side).

[0232] The inner peripheral end of the bonding layer 91 can be considered the end point on the terahertz element 20 side of the bonding layer 91. That is, the inner peripheral end of the bonding layer 91 formed on the substrate main surface 71 of the individual antenna substrate 70A can be considered the end point on the terahertz element 20A side of the bonding layer 91. This inner peripheral end of the bonding layer 91 is, for example, a circular shape that is partially missing when viewed from the z-direction, corresponding to the antenna recess 80A. The inner peripheral end of the bonding layer 91 formed on the substrate main surface 71 of the individual antenna substrate 70B can be considered the end point on the terahertz element 20B side of the bonding layer 91. This inner peripheral end of the bonding layer 91 is, for example, a circular shape that is partially missing when viewed from the z-direction, corresponding to the antenna recess 80B. The inner peripheral end of the bonding layer 91 formed on the substrate main surface 71 of the individual antenna substrate 70C can be considered the end point on the terahertz element 20C side of the bonding layer 91. The inner peripheral end of the bonding layer 91 may, for example, be a partially missing circular shape when viewed from the z-direction, corresponding to the antenna recess 80C. However, the shape of the inner peripheral end of these bonding layers 91 can be arbitrarily changed.

[0233] Next, the gas space 92 will be explained.

[0234] like Figure 4 , Figure 5 and Figure 12 As shown, the gas space 92 in this embodiment is divided by the dielectric main surface 51 and the antenna surface 81. Specifically, the opening of the antenna recess 80 is closed by the dielectric main surface 51. Thus, the gas space 92 is divided by the dielectric main surface 51 and the antenna surface 81, which is the inner surface of the antenna recess 80. More specifically, the gas space 92 is divided by the dielectric main surface 51 and the antenna surfaces 81A to 81C. Specifically, the openings of the antenna recesses 80A to 80C are each closed by the dielectric main surface 51. In this embodiment, since the bonding layer 91 is provided along the periphery of the respective openings of the antenna recesses 80A to 80C, the gas space 92 is sealed. That is, the gas space 92 is sealed by the bonding layer 91. The reflective films 82A to 82C are respectively provided within the gas space 92.

[0235] like Figure 12As shown, the gas space 92 includes: a gas space 92A divided by the antenna recess 80A and the dielectric main surface 51; a gas space 92B divided by the antenna recess 80B and the dielectric main surface 51; and a gas space 92C divided by the antenna recess 80C and the dielectric main surface 51. In this embodiment, gas spaces 92A, 92B, and 92C are connected. More specifically, gas spaces 92A and 92B are connected at the opening end 81Aa (opening end 82Aa of the reflective film 82A) of the antenna surface 81A and the opening end 81Ba (opening end 82Ba of the reflective film 82B) of the antenna surface 81B. Gas spaces 92B and 92C are connected at the opening end 81Bb (opening end 82Bb of the reflective film 82B) of the antenna surface 81B and the opening end 81Ca (opening end 82Ca of the reflective film 82C) of the antenna surface 81C.

[0236] Gas spaces 92A to 92C are each roughly hemispherical. Gas space 92A, viewed from the z-direction, is larger than terahertz element 20A in directions orthogonal to the z-direction. Viewed from the z-direction, the length of gas space 92A in the x-direction is longer than that of terahertz element 20A in the x-direction, and the length of gas space 92A in the y-direction is also longer than that of terahertz element 20A in the y-direction. Gas space 92B, viewed from the z-direction, is larger than terahertz element 20B in directions orthogonal to the z-direction. Viewed from the z-direction, the length of gas space 92B in the x-direction is longer than that of terahertz element 20B in the x-direction, and the length of gas space 92B in the y-direction is also longer than that of terahertz element 20B in the y-direction. Gas space 92C, viewed from the z-direction, is larger than terahertz element 20C in directions orthogonal to the z-direction. Viewed from the z-direction, the length of the gas space 92C in the x-direction is longer than the length of the terahertz element 20C in the x-direction, and the length of the gas space 92C in the y-direction is longer than the length of the terahertz element 20C in the y-direction.

[0237] Gases exist in gas spaces 92A to 92C respectively. The refractive index of each gas in gas spaces 92A to 92C, i.e., the gas refractive index n3, is set to be lower than the refractive index n2 of the dielectric. That is, each of gas spaces 92A to 92C contains a gas with a refractive index lower than the refractive index n2 of the dielectric. For example, the gas present in each of gas spaces 92A to 92C is air. In this case, the gas refractive index n3 is approximately 1. Furthermore, the gas present in each of gas spaces 92A to 92C is not limited to air; it can be any gas as long as its refractive index is lower than the refractive index n2 of the dielectric.

[0238] The reflective film 82A has a portion that faces the terahertz element 20A through the dielectric body 50 and the gas space 92A. In this embodiment, the entire reflective film 82A faces the terahertz element 20A through the dielectric body 50 and the gas space 92A.

[0239] In this embodiment, the reflective film 82A reflects electromagnetic waves that have passed through the dielectric body 50 and propagated through the gas space 92A toward the receiving point P1 of the terahertz element 20A. In other words, the reflective film 82A can also be described as a film that guides electromagnetic waves that have passed through the dielectric body 50 and propagated through the gas space 92A toward the receiving point P1 of the terahertz element 20A.

[0240] The reflective film 82B has a portion that faces the terahertz element 20B, separated by the dielectric body 50 and the gas space 92B. In this embodiment, the entire reflective film 82B faces the terahertz element 20B, separated by the dielectric body 50 and the gas space 92B.

[0241] In this embodiment, the reflective film 82B reflects electromagnetic waves that pass through the dielectric body 50 and propagate through the gas space 92B toward the receiving point P1 of the terahertz element 20B. In other words, the reflective film 82B can also be described as a film that guides electromagnetic waves that pass through the dielectric body 50 and propagate through the gas space 92B toward the receiving point P1 of the terahertz element 20B.

[0242] The reflective film 82C has a portion that faces the terahertz element 20C, separated by the dielectric body 50 and the gas space 92C. In this embodiment, the entire reflective film 82C faces the terahertz element 20C, separated by the dielectric body 50 and the gas space 92C.

[0243] In this embodiment, the reflective film 82C reflects electromagnetic waves that have passed through the dielectric body 50 and propagated through the gas space 92C toward the receiving point P1 of the terahertz element 20C. In other words, the reflective film 82C can also be described as a film that guides electromagnetic waves that have passed through the dielectric body 50 and propagated through the gas space 92C toward the receiving point P1 of the terahertz element 20C.

[0244] like Figure 13As shown, the terahertz device 10 includes: a first electrode 101 and a second electrode 102 for electrical connection with an external source; and a first conductive portion 110 and a second conductive portion 120 disposed within a dielectric body 50 and electrically connected to the terahertz element 20. In this embodiment, the two electrodes 101 and 102 are individually provided corresponding to individual antenna substrates 70A to 70C. That is, the two electrodes 101 and 102 have: a first electrode 101A and a second electrode 102A provided on individual antenna substrate 70A; a first electrode 101B and a second electrode 102B provided on individual antenna substrate 70B; and a first electrode 101C and a second electrode 102C provided on individual antenna substrate 70C. In addition, in this embodiment, the two conductive portions 110 and 120 are individually provided corresponding to the terahertz elements 20A to 20C. That is, the two conductive parts 110 and 120 have: a first conductive part 110A and a second conductive part 120A electrically connected to the terahertz element 20A; a first conductive part 110B and a second conductive part 120B electrically connected to the terahertz element 20B; and a first conductive part 110C and a second conductive part 120C electrically connected to the terahertz element 20C.

[0245] In this embodiment, the two electrodes 101A and 102A are formed in the portion of the dielectric body 50 that does not overlap with the reflective film 82A when viewed from the z-direction, and in the portion of the dielectric body 50 that overlaps with the reflective film 82A when viewed from the x-direction. In other words, the two electrodes 101A and 102A are disposed on one side of the dielectric body 50 relative to the reflective film 82A in the x-direction.

[0246] In this embodiment, the two electrodes 101A and 102A are disposed to the side relative to the antenna substrate 70 (separate antenna substrate 70A). Specifically, the two electrodes 101A and 102A are formed in the portion of the dielectric main surface 51 corresponding to the first protrusion 61, i.e., the first protruding surface 51a (refer to...). Figure 4 and Figure 5 (Refer to). The two electrodes 101A and 102A are arranged in the y direction with their x-direction aligned with each other. The two electrodes 101A and 102A face downwards.

[0247] In this embodiment, the two electrodes 101B and 102B are formed in the portion of the dielectric body 50 that does not overlap with the reflective film 82B when viewed from the z-direction, and in the portion of the dielectric body 50 that overlaps with the reflective film 82B when viewed from the x-direction. In other words, the two electrodes 101B and 102B are portions of the dielectric body 50 disposed on one side in the x-direction relative to the reflective film 82B.

[0248] In this embodiment, the two electrodes 101B and 102B are disposed to the side relative to the antenna substrate 70 (separate antenna substrate 70B). Specifically, the two electrodes 101B and 102B are formed in the portion of the dielectric main surface 51 corresponding to the first protrusion 61, i.e., the first protruding surface 51a. The two electrodes 101B and 102B are arranged in the y-direction with their x-direction aligned with each other. The two electrodes 101B and 102B face downward.

[0249] In this embodiment, the two electrodes 101C and 102C are formed in the portion of the dielectric body 50 that does not overlap with the reflective film 82C when viewed from the z-direction, and in the portion of the dielectric body 50 that overlaps with the reflective film 82C when viewed from the x-direction. In other words, the two electrodes 101C and 102C are disposed on one side of the dielectric body 50 relative to the reflective film 82C in the x-direction.

[0250] In this embodiment, the two electrodes 101C and 102C are disposed to the side relative to the antenna substrate 70 (separate antenna substrate 70C). Specifically, the two electrodes 101C and 102C are formed in the portion of the dielectric main surface 51 corresponding to the first protrusion 61, i.e., the first protruding surface 51a. The two electrodes 101C and 102C are arranged in the y-direction with their x-direction aligned with each other. The two electrodes 101C and 102C face downward.

[0251] In this embodiment, the two electrodes 101A, 102A, the two electrodes 101B, 102B, and the two electrodes 101C, 102C are arranged at intervals in the y direction while being aligned with each other in the x direction.

[0252] In this embodiment, each electrode 101A, 102A, 101B, 102B, 101C, and 102C has a stacked structure, for example, including a Ni layer and an Au layer. However, the structure of each electrode 101A, 102A, 101B, 102B, 101C, and 102C is not limited to this and can be arbitrary; for example, it can be constructed by including a Pd layer or a Sn layer. Furthermore, the shape of each electrode 101A, 102A, 101B, 102B, 101C, and 102C viewed from the z-direction is arbitrary, for example, a rectangular shape with the y-direction as the long side and the x-direction as the short side. Moreover, the shapes of the two electrodes 101A and 102A, the two electrodes 101B and 102B, and the two electrodes 101C and 102C viewed from the z-direction can also be different from each other.

[0253] By the way, such as Figure 12As shown, the length in the z-direction of the antenna substrate 70 (individual antenna substrates 70A, 70B, and 70C) is greater than the thickness of the dielectric body 50. Therefore, each electrode 101A, 102A, 101B, 102B, 101C, and 102C is positioned slightly above the center of the terahertz device 10 in the z-direction (in other words, on the side of the main surface 11 of the device).

[0254] Each conductive part 110A, 110B, 110C, 120A, 120B, and 120C is integrally disposed within the dielectric body 50. That is, the dielectric body 50 seals each of the terahertz elements 20A to 20C according to each conductive part 110A, 110B, 110C, 120A, 120B, and 120C. Therefore, the conductive parts 110A, 110B, 110C, 120A, 120B, and 120C within the dielectric body 50 cannot contact the reflective films 82A to 82C outside the dielectric body 50. In other words, the dielectric body 50 functions as a component that insulates the conductive parts 110A, 110B, 110C, 120A, 120B, and 120C from the reflective films 82A to 82C.

[0255] like Figure 13 As shown, the two conductive portions 110A and 120A, viewed from the z-direction, extend in the x-direction of the first protrusion 61, overlapping with both the terahertz element 20A and the electrodes 101A and 102A. The two conductive portions 110B and 120B, viewed from the z-direction, extend in the x-direction, overlapping with both the terahertz element 20B and the electrodes 101B and 102B. The two conductive portions 110C and 120C, viewed from the z-direction, extend in the x-direction, overlapping with both the terahertz element 20C and the electrodes 101C and 102C.

[0256] In this embodiment, each conductive part 110A, 120A, 110B, 120B, 110C, and 120C is a strip that extends in the x direction with the y direction as its width direction.

[0257] In this embodiment, each conductive portion 110A, 120A, 110B, 120B, 110C, and 120C is a thin film with the z-direction as its thickness direction. However, the specific shape of each conductive portion 110A, 120A, 110B, 120B, 110C, and 120C is arbitrary and can also be a plate with a specified thickness. In this embodiment, the terahertz element 20A is flip-chip mounted on the two conductive portions 110A and 120A, the terahertz element 20B is flip-chip mounted on the two conductive portions 110B and 120B, and the terahertz element 20C is flip-chip mounted on the two conductive portions 110C and 120C.

[0258] like Figure 14As shown, the first conductive portion 110A is a structure that electrically connects the terahertz element 20A to the first electrode 101A. The first conductive portion 110A extends in the protruding direction, i.e., the x-direction, of the first protrusion 61, such that it is opposite to both the first pad 33a of the terahertz element 20A and the first electrode 101A.

[0259] like Figure 4 As shown, the first conductive portion 110A includes: a first element-facing portion 111 facing the first pad 33a of the terahertz element 20A in the z-direction; a first electrode-facing portion 112 facing the first electrode 101A in the z-direction; a first connecting portion 113 connecting the first element-facing portion 111 and the first electrode-facing portion 112; and a first pillar portion 115 connecting the first electrode-facing portion 112 and the first electrode 101A. In this embodiment, the first element-facing portion 111 and the first electrode-facing portion 112 constitute the two ends of the first conductive portion 110A in the x-direction.

[0260] like Figure 14 and Figure 15 As shown, the first element-facing portion 111 is disposed between the terahertz element 20A and the reflective film 82A in the z-direction, and is formed such that at least a portion of it overlaps with the first pad 33a of the terahertz element 20A when viewed from the z-direction. The first element-facing portion 111 and the reflective film 82A are opposite each other in the z-direction. Corresponding to the extension of the first pad 33a of the terahertz element 20A in the x-direction, the first element-facing portion 111 extends in the x-direction. For example, the shape of the first element-facing portion 111 when viewed from the z-direction is a rectangle with the x-direction as the long side and the y-direction as the short side.

[0261] The first conductive portion 110A has a first bump 114 disposed between the first component opposing portion 111 and the first pad 33a of the terahertz element 20A. The terahertz element 20A is flip-chip mounted on the first component opposing portion 111 via the first bump 114. The first pad 33a and the first component opposing portion 111 are electrically connected via the first bump 114.

[0262] In this embodiment, multiple first bumps 114 are provided. For example, corresponding to the first pad 33a and the first element opposing portion 111 of the terahertz element 20A extending in the x-direction, multiple first bumps 114 are arranged in the x-direction (two in this embodiment). The first element opposing portion 111 and the first bumps 114 are arranged at a position overlapping with the receiving point P1 when viewed from the z-direction. The shape of the first bumps 114 is, for example, a quadrangular prism. However, the shape of the first bumps 114 is not limited to this and can be arbitrary.

[0263] The first bump 114 can be a single-layer structure or a stacked structure of multiple bumps. As an example, the first bump 114 can be a stacked structure of a Cu-containing metal layer, a Ti-containing metal layer, and a Sn-containing alloy layer. The Sn-containing alloy layer refers to, for example, a Sn-Sb alloy layer or a Sn-Ag alloy layer.

[0264] Furthermore, a first insulating layer surrounding the first protrusion 114 may also be formed on the first component opposing portion 111. The first insulating layer is formed into an upwardly opening frame shape, and the first protrusion 114 is housed within the first insulating layer. This can suppress the first protrusion 114 from drooping to the side. However, the first insulating layer is not necessary.

[0265] The first electrode opposing portion 112 is formed, viewed from the z-direction, such that at least a portion of it overlaps with the first electrode 101A. For example, the first electrode opposing portion 112 is formed at a position that protrudes laterally from the antenna substrate 70 (separate antenna substrate 70A), specifically within the first protrusion 61. Therefore, the first electrode opposing portion 112 is positioned, viewed from the z-direction, in a position that does not overlap with the reflective film 82A.

[0266] In this embodiment, the first electrode opposing portion 112 is a rectangular shape extending in both the x and y directions when viewed from the z-direction. The first electrode 101A is wider than the first electrode opposing portion 112 when viewed from the z-direction. However, the shape and size of the first electrode 101A are not limited to this; it may be smaller than the first electrode opposing portion 112, or it may have the same shape.

[0267] like Figure 13 and Figure 14 As shown, the first connecting portion 113 is disposed between the first element opposing portion 111 and the first electrode opposing portion 112, and extends in the x direction with the y-direction as its width direction. A portion of the first connecting portion 113 is opposite to the reflective film 82A in the z-direction. That is, a portion of the first connecting portion 113 is disposed at a position overlapping with the reflective film 82A. In other words, the first connecting portion 113, viewed from the z-direction, has a portion that overlaps with the reflective film 82A and a portion that does not overlap with the reflective film 82A.

[0268] In this embodiment, the first connecting portion 113 is narrower than the width of the first element opposing portion 111. Specifically, the width (length in the y-direction) of the first connecting portion 113 is set to be shorter than the width (length in the y-direction) of the first element opposing portion 111. For example, the first connecting portion 113 in this embodiment is narrower than the width of the first electrode opposing portion 112. In other words, the first electrode opposing portion 112 extends longer in the y-direction than the first connecting portion 113.

[0269] The first connecting portion 113 has: a first connecting body portion 113a that is narrower than the width of the first element opposing portion 111 and the first electrode opposing portion 112; and a first element side tapered portion 113b and a first electrode side tapered portion 113c located on both sides of the first connecting body portion 113a in the length direction.

[0270] The first connecting body portion 113a extends along the x-direction as its length direction and has a certain width in the y-direction. Viewed from the z-direction, the first connecting body portion 113a overlaps with the reflective film 82A. The first connecting body portion 113a can be described as a structure connecting the first element opposing portion 111 and the first electrode opposing portion 112. For example... Figure 15 As shown, the width W1 of the first connecting body portion 113a is shorter than the width W2 of the first element opposing portion 111.

[0271] The first element-side tapered portion 113b connects the first connecting body portion 113a to the first element opposing portion 111. The first element-side tapered portion 113b is formed, for example, at a position adjacent to the terahertz element 20A in the x direction when viewed from the z direction, and overlaps with the reflective film 82A when viewed from the z direction.

[0272] The first element-side tapered portion 113b is formed such that its width gradually increases from the first connecting body portion 113a toward the first element opposing portion 111. In this embodiment, the first element-side tapered portion 113b has a pair of first element-side inclined surfaces 113ba that are inclined in a manner that gradually move away from each other from the first connecting body portion 113a toward the first element opposing portion 111.

[0273] like Figure 13 As shown, the first electrode-side tapered portion 113c connects the first connecting body portion 113a to the first electrode opposing portion 112. The first electrode-side tapered portion 113c is formed, for example, in the portion that does not overlap with the reflective film 82A when viewed from the z-direction, and is formed, for example, within the first protrusion 61.

[0274] The first electrode-side tapered portion 113c is formed such that its width gradually increases from the first connecting body portion 113a toward the first electrode opposing portion 112. In this embodiment, the first electrode-side tapered portion 113c has a pair of first electrode-side inclined surfaces 113ca that are inclined toward each other in a manner that gradually separate from each other from the first connecting body portion 113a toward the first electrode opposing portion 112.

[0275] like Figure 4 As shown, a first column portion 115 is disposed between the first electrode 101A and the first electrode opposing portion 112. The first column portion 115 extends in the z-direction as the height direction and is connected to the first electrode 101A and the first electrode opposing portion 112.

[0276] The first pillar portion 115 is formed, for example, in a cylindrical shape. However, the specific shape of the first pillar portion 115 is arbitrary; for example, it may also be prismatic. In this embodiment, a first recess 112a is formed at the position in the first electrode opposing portion 112 that overlaps with the first pillar portion 115. Alternatively, the first recess 112a may not be present.

[0277] According to this structure, the first pad 33a of the terahertz element 20A and the first electrode 101A are electrically connected via the first bump 114, the first element opposite portion 111, the first connection portion 113, the first electrode opposite portion 112 and the first pillar portion 115.

[0278] Furthermore, the shapes of the first conductive portions 110B and 110C viewed from the z-direction are the same as the shape of the first conductive portion 110A viewed from the z-direction. That is, the first conductive portions 110B and 110C, like the first conductive portion 110A, have a first element-facing portion 111, a first electrode-facing portion 112, a first connection portion 113, a first bump 114, and a first pillar portion 115. Therefore, the first pad 33a of the terahertz element 20B and the first electrode 101B are electrically connected via the first bump 114, the first element-facing portion 111, the first connection portion 113, the first electrode-facing portion 112, and the first pillar portion 115 of the first conductive portion 110B. Therefore, the first conductive portion 110B can be described as a structure that electrically connects the terahertz element 20B to the first electrode 101B. Furthermore, the first pad 33a of the terahertz element 20C is electrically connected to the first electrode 101C via the first bump 114, the first element opposing portion 111, the first connection portion 113, the first electrode opposing portion 112, and the first pillar portion 115 of the first conductive portion 110C. Therefore, the first conductive portion 110C can be described as a structure that electrically connects the terahertz element 20C to the first electrode 101C.

[0279] like Figure 5 and Figure 13 As shown, the second conductive part 120A is a structure that electrically connects the terahertz element 20A to the second electrode 102A. Figure 13 and Figure 14 As shown, in this embodiment, the first conductive portion 110A and the second conductive portion 120A are arranged in the y direction when viewed from the z direction. The two conductive portions 110A and 120A, when viewed from the z direction, can also be described as extending in one of the radial directions from the terahertz element 20A toward the reflective film 82A.

[0280] In particular, the two conductive portions 110A and 120A of this embodiment extend away from the terahertz element 20A when viewed from the z-direction. Specifically, the two conductive portions 110A and 120A extend from the terahertz element 20A toward the first protrusion 61 in the x-direction when viewed from the z-direction.

[0281] like Figure 5 As shown, the second conductive portion 120A includes: a second element opposing portion 121 facing the second pad 34a of the terahertz element 20A in the z-direction; a second electrode opposing portion 122 facing the second electrode 102A in the z-direction; and a second pillar portion 125 connecting the second element opposing portion 121 and the second electrode 102A. In this embodiment, the second element opposing portion 121 and the second electrode opposing portion 122 constitute the two ends of the second conductive portion 120A in the x-direction.

[0282] The second element-facing portion 121 is disposed between the terahertz element 20A and the reflective film 82A in the z-direction, and is formed such that at least a portion overlaps with the second pad 34a of the terahertz element 20A when viewed from the z-direction. The second element-facing portion 121 is opposite to the reflective film 82A in the z-direction. Corresponding to the extension of the second pad 34a of the terahertz element 20A in the x-direction, the second element-facing portion 121 extends in the x-direction. For example, the second element-facing portion 121 is formed in a rectangular shape with the x-direction as the length direction and the y-direction as the width direction.

[0283] In this embodiment, the two pads 33a and 34a of the terahertz element 20A are positioned apart in the y-direction, and the opposing portions 111 and 121 of the two elements are arranged in the y-direction. A dielectric body 50 is present between the opposing portions 111 and 121 of the two elements, and insulation is provided by the dielectric body 50.

[0284] The second conductive portion 120A has a second bump 124 disposed between the second component opposing portion 121 and the second pad 34a of the terahertz element 20A. The terahertz element 20A is flip-chip mounted on the second component opposing portion 121 via the second bump 124. The second pad 34a of the terahertz element 20A and the second component opposing portion 121 are electrically connected via the second bump 124.

[0285] like Figure 14 and Figure 15 As shown, in this embodiment, multiple second bumps 124 are provided. For example, corresponding to the second pad 34a of the terahertz element 20A and the second element opposing portion 121 extending in the x-direction, multiple second bumps 124 are arranged in the x-direction (two in this embodiment). The second element opposing portion 121 and the second bumps 124 are positioned at a location that does not overlap with the receiving point P1 when viewed from the z-direction. The first bump 114 and the second bump 124 are arranged opposite each other at a distance in the y-direction and aligned in the x-direction. However, the arrangement of the first bump 114 and the second bump 124 is not limited to this; for example, the first bump 114 and the second bump 124 may be arranged offset in the y-direction.

[0286] like Figure 14 As shown, the second electrode opposing portion 122 is formed such that at least a portion of it overlaps with the second electrode 102A when viewed from the z-direction. For example, the second electrode opposing portion 122 is formed at a position that protrudes laterally from the antenna substrate 70 (separate antenna substrate 70A), specifically within the second protrusion 62. Therefore, the second electrode opposing portion 122 is positioned in a position that does not overlap with the reflective film 82A when viewed from the z-direction.

[0287] In this embodiment, the second electrode opposing portion 122 is a rectangular shape extending in both the x and y directions when viewed from the z direction. The second electrode 102A is wider than the second electrode opposing portion 122 when viewed from the z direction. However, the size and shape of the second electrode 102A are not limited to this; it may be formed to be smaller than the second electrode opposing portion 122, or it may be formed to have the same shape.

[0288] The second connecting portion 123 is disposed between the second element opposing portion 121 and the second electrode opposing portion 122, and extends in the x direction with the y-direction as the width direction. A portion of the second connecting portion 123 is opposite to the reflective film 82A in the z-direction. That is, a portion of the second connecting portion 123 is disposed at a position overlapping with the reflective film 82A. In other words, the second connecting portion 123, viewed from the z-direction, has a portion that overlaps with the reflective film 82A and a portion that does not overlap with the reflective film 82A.

[0289] In this embodiment, the second connecting portion 123 is narrower than the width of the second element opposing portion 121. Specifically, the width (length in the y-direction) of the second connecting portion 123 is set to be shorter than the width (length in the y-direction) of the second element opposing portion 121. For example, the second connecting portion 123 in this embodiment is narrower than the width of the second electrode opposing portion 122. In other words, the second electrode opposing portion 122 extends longer in the y-direction than the second connecting portion 123.

[0290] The second connecting portion 123 has: a second connecting body portion 123a that is narrower than the width of the second element opposing portion 121 and the second electrode opposing portion 122; and a second element side tapered portion 123b and a second electrode side tapered portion 123c located at both ends in the length direction of the second connecting body portion 123a.

[0291] The second connecting body portion 123a extends along the x-direction as its length direction and has a certain width in the y-direction. Viewed from the z-direction, the second connecting body portion 123a overlaps with the reflective film 82A. The second connecting body portion 123a can also be described as a structure that connects the second element opposing portion 121 and the second electrode opposing portion 122. For example... Figure 15 As shown, the width W3 of the second connecting body portion 123a is shorter than the width W4 of the second element opposing portion 121.

[0292] The second element-side tapered portion 123b connects the second connecting body portion 123a to the second element opposing portion 121. For example, the second element-side tapered portion 123b is formed at a position adjacent to the terahertz element 20A in the x direction when viewed from the z direction, and overlaps with the reflective film 82A when viewed from the z direction.

[0293] like Figure 15 As shown, the second element-side tapered portion 123b is formed such that its width gradually increases from the second connecting body portion 123a toward the second element opposing portion 121. In this embodiment, the second element-side tapered portion 123b has a pair of second element-side inclined surfaces 123ba that are inclined in a manner that gradually move away from each other from the second connecting body portion 123a toward the second element opposing portion 121.

[0294] like Figure 14 As shown, the second electrode-side tapered portion 123c connects the second connecting body portion 123a to the second electrode opposing portion 122. The second electrode-side tapered portion 123c is formed, for example, in the portion that does not overlap with the reflective film 82A when viewed from the z-direction, and is formed, for example, within the second protrusion 62.

[0295] The second electrode-side tapered portion 123c is formed such that its width gradually increases from the second connecting body portion 123a toward the second electrode opposing portion 122. In this embodiment, the second electrode-side tapered portion 123c has a pair of second electrode-side inclined surfaces 123ca that are inclined in a manner that gradually move away from each other from the second connecting body portion 123a toward the second electrode opposing portion 122.

[0296] like Figure 5 As shown, a second column portion 125 is disposed between the second electrode 102A and the second electrode opposing portion 122. The second column portion 125 extends in the z-direction as the height direction and is connected to the second electrode 102A and the second electrode opposing portion 122.

[0297] The second pillar portion 125 is formed, for example, in a cylindrical shape. However, the specific shape of the second pillar portion 125 can be arbitrarily changed, for example, it can be prismatic. In this embodiment, a second recess 122a is formed in the portion of the second electrode opposing portion 122 that overlaps with the second pillar portion 125. Alternatively, the second recess 122a may not be present.

[0298] According to this structure, the second pad 34a of the terahertz element 20A is electrically connected to the second electrode 102A via the second bump 124, the second element opposite portion 121, the second connection portion 123, the second electrode opposite portion 122, and the second post portion 125.

[0299] Furthermore, the shapes of the second conductive portions 120B and 120C viewed from the z-direction are the same as the shape of the second conductive portion 120A viewed from the z-direction. That is, the second conductive portions 120B and 120C, like the second conductive portion 120A, have a second element opposing portion 121, a second electrode opposing portion 122, a second connection portion 123, a second bump 124, and a second pillar portion 125. Therefore, the second pad 34a of the terahertz element 20B and the second electrode 102B are electrically connected via the second bump 124, the second element opposing portion 121, the second connection portion 123, the second electrode opposing portion 122, and the second pillar portion 125 of the second conductive portion 120B. Therefore, the second conductive portion 120B can be described as a structure that electrically connects the terahertz element 20B and the second electrode 102B. Furthermore, the second pad 34a of the terahertz element 20C is electrically connected to the second electrode 102C via the second bump 124, the second element opposing portion 121, the second connection portion 123, the second electrode opposing portion 122, and the second post portion 125 of the second conductive portion 120C. Therefore, the second conductive portion 120C can be described as a structure that electrically connects the terahertz element 20C to the second electrode 102C.

[0300] In addition, such as Figure 13 As shown, in this embodiment, the first conductive portion 110B and the second conductive portion 120B are arranged in the y direction when viewed from the z direction. The two conductive portions 110B and 120B can be said to extend from the terahertz element 20B in one of the radial directions toward the reflective film 82B when viewed from the z direction.

[0301] In particular, the two conductive portions 110B and 120B of this embodiment can be said to extend away from the terahertz element 20B when viewed from the z-direction. Specifically, the two conductive portions 110B and 120B can be said to extend from the terahertz element 20B toward the first protrusion 61 in the x-direction when viewed from the z-direction.

[0302] Furthermore, in this embodiment, the first conductive portion 110C and the second conductive portion 120C are arranged in the y direction when viewed from the z direction. The two conductive portions 110C and 120C, when viewed from the z direction, can be said to extend in one of the radial directions from the terahertz element 20C to the reflective film 82C.

[0303] In particular, the two conductive portions 110C and 120C in this embodiment extend away from the terahertz element 20C when viewed from the z-direction. Specifically, the two conductive portions 110C and 120C extend from the terahertz element 20C toward the first protrusion 61 in the x-direction when viewed from the z-direction.

[0304] like Figure 13As shown, in this embodiment, the two conductive parts 110A, 120A, the two conductive parts 110B, 120B and the two conductive parts 110C, 120C are arranged at intervals in the y direction while being aligned with each other in the x direction.

[0305] In this embodiment, the reflective film 82A is electrically floating. Specifically, the separate antenna substrate 70A on which the reflective film 82A is formed is insulating. The two conductive portions 110A and 120A are disposed within the dielectric body 50, thus the reflective film 82A is insulated from the two conductive portions 110A and 120A. Furthermore, the reflective film 82A is separated from the two electrodes 101A and 102A, and the separate antenna substrate 70A exists between them. Therefore, the reflective film 82A is insulated from the two electrodes 101A and 102A. Thus, the floating state of the reflective film 82A can be maintained. Furthermore, the reflective films 82B and 82C are also electrically floating in the same way as the reflective film 82A.

[0306] (Manufacturing method of terahertz device)

[0307] Next, use Figures 16-30 The manufacturing method of the terahertz device 10 according to this embodiment will be described. For ease of explanation, the manufacturing method of one terahertz device 10 will be described.

[0308] The manufacturing method of the terahertz device 10 generally includes: a step of forming a dielectric body 50 for sealing terahertz elements 20, etc.; a step of forming an antenna substrate 70; and a step of assembling the dielectric body 50 and the antenna substrate 70 together.

[0309] First, using Figures 16-26 The process of forming the dielectric body 50 of the sealed terahertz element 20, etc., will be explained.

[0310] like Figure 16 and Figure 17 As shown, the manufacturing method of the terahertz device 10 includes a step of forming pillars 115 and 125 on a support substrate 130.

[0311] The support substrate 130 is made of a semiconductor material that is a single crystal material, and in this embodiment, it is a single crystal material of Si. The thickness of the support substrate 130 in this embodiment is, for example, 725 to 775 μm. Furthermore, the support substrate 130 is not limited to Si wafers, and may also be, for example, a glass substrate.

[0312] The process of forming the pillars 115 and 125 includes, for example, the process of forming a base layer on the support substrate 130. This base layer is formed using a sputtering method. In this embodiment, after forming a Ti layer on the support substrate 130, a Cu layer is formed in contact with the Ti layer as the base layer. That is, the base layer is formed by stacking Ti and Cu layers. In this embodiment, the thickness of the Ti layer is approximately 10 to 30 μm, and the thickness of the Cu layer is approximately 200 to 800 μm. Furthermore, the constituent materials and thickness of the base layer are not limited to those described above.

[0313] Next, a plating layer in contact with the substrate layer is formed. The plating layer is formed by forming a photoresist pattern based on photolithography and electroplating. Specifically, a photosensitive resist is coated to cover the entire surface of the substrate layer, and the photosensitive resist is exposed and developed. This forms a patterned resist layer (hereinafter referred to as "resist pattern"). The photosensitive resist can be applied, for example, using a spin coater, but is not limited to this method. At this time, a portion of the substrate layer is exposed from the resist pattern. Next, the substrate layer is electroplated as a conductive path. Thus, a plating layer is deposited on the substrate layer exposed from the resist pattern. The material constituting the plating layer in this embodiment is, for example, Cu. After forming the plating layer, the resist pattern is removed. Through the above processes, pillars 115 and 125 are formed. The pillars 115 and 125 stand upright from the support substrate 130.

[0314] like Figure 16 and Figure 17 As shown, the manufacturing method of the terahertz device 10 includes a first sealing step of forming a first dielectric layer 131 covering the pillars 115 and 125. In the first sealing step, the first dielectric layer 131 is formed, for example, by molding. In this embodiment, the first dielectric layer 131 has electrical insulating properties, for example, a synthetic resin with epoxy resin as the main agent. The first dielectric layer 131 constitutes a part of the dielectric body 50.

[0315] The specific steps for forming the first dielectric layer 131 are arbitrary. For example, it is possible to form the first dielectric layer 131 higher than the pillars 115 and 125, and then expose the front end faces of the pillars 115 and 125 by grinding the first dielectric layer 131. In this case, grinding marks, which are grinding traces, are formed on the upper surface of the first dielectric layer 131.

[0316] Furthermore, during the grinding of the first dielectric layer 131, the front end faces of the pillars 115 and 125 may be ground. In this case, burrs may be generated on the front end faces of the pillars 115 and 125. Therefore, the manufacturing method of the terahertz device 10 may also include a step of removing the burrs from the pillars 115 and 125. In this case, as... Figure 17As shown, the front end faces of the pillars 115 and 125 are located at a position slightly recessed from the upper surface of the first dielectric layer 131.

[0317] like Figure 18 and Figure 19 As shown in (a), the manufacturing method of the terahertz device 10 includes: a step of forming two conductive portions 110A and 120A; a step of forming two conductive portions 110B and 120B; and a step of forming two conductive portions 110C and 120C. Since these steps of forming conductive portions are common, the steps of forming the two conductive portions 110A and 120A will be described, while the steps of forming the two conductive portions 110B and 120B and the steps of forming the two conductive portions 110C and 120C will be omitted.

[0318] like Figure 18 As shown, the process of forming the two conductive portions 110A and 120A includes forming element-facing portions 111 and 121, electrode-facing portions 112 and 122, and connecting portions 113 and 123. In this process, the element-facing portions 111 and 121, electrode-facing portions 112 and 122, and connecting portions 113 and 123 are formed by patterning on the first dielectric layer 131. Furthermore, the element-facing portions 111 and 121, electrode-facing portions 112 and 122, and connecting portions 113 and 123 may also be composed of a base layer and a plating layer.

[0319] Here, as Figure 19 As shown in (b), in the two conductive portions 110A and 120A, based on the relationship that the front end faces of the pillar portions 115 and 125 are recessed compared to the upper surface of the first dielectric layer 131, recesses 112a and 122a are formed on the electrode-facing portions 112 and 122 formed on the front end faces of the pillar portions 115 and 125. Furthermore, regarding the two conductive portions 110B, 120B, 110C, and 120C, in the same manner as the two conductive portions 110A and 120A, recesses 112a and 122a are formed on the electrode-facing portions 112 and 122.

[0320] like Figures 20-23 As shown, the manufacturing method of the terahertz device 10 includes a component mounting step of mounting terahertz elements 20A, 20B, and 20C respectively. The component mounting step is performed, for example, by flip-chip bonding.

[0321] like Figure 20 and Figure 21As shown, the component mounting process includes forming bumps 114 and 124 on conductive portions 110A, 120A, 110B, 120B, 110C, and 120C. The process of forming the bumps 114 and 124 includes, for example, forming a resist layer outside the bump formation area of ​​the bumps 114 and 124; laminating a conductive layer constituting the bumps 114 and 124 in the bump formation area; and removing the resist layer. The resist layer is formed, for example, from a photosensitive resist, and is patterned by exposure and development.

[0322] Furthermore, in the formation process of conductive parts 110A, 120A, 110B, 120B, 110C, and 120C, if an unwanted substrate layer is formed, the manufacturing method of the terahertz device 10 may also include a process for removing the unwanted substrate layer. The unwanted substrate layer can be removed, for example, by wet etching using a mixed solution of H2SO4 (sulfuric acid) and H2O2 (hydrogen peroxide).

[0323] like Figure 22 and Figure 23 As shown, the component mounting process includes: bonding the terahertz element 20A to conductive portions 110A and 120A using bumps 114 and 124; bonding the terahertz element 20B to conductive portions 110B and 120B using bumps 114 and 124; and bonding the terahertz element 20C to conductive portions 110C and 120C using bumps 114 and 124. Thus, the terahertz element 20A is flip-chip mounted on the two conductive portions 110A and 120A, thereby making the terahertz element 20A conductive with the two conductive portions 110A and 120A. Since the terahertz element 20B is flip-chip mounted on the two conductive portions 110B and 120B, the terahertz element 20B is conductive with the two conductive portions 110B and 120B. Since the terahertz element 20C is flip-chip mounted on the two conductive parts 110C and 120C, the terahertz element 20C is connected to the two conductive parts 110C and 120C.

[0324] like Figure 24As shown, the manufacturing method of the terahertz device 10 includes a second sealing step, which forms a second dielectric layer 132 that seals each conductive part 110A, 120A, 110B, 120B, 110C, 120C and each terahertz element 20A-20C. The second dielectric layer 132 is laminated on the first dielectric layer 131. In this embodiment, the second dielectric layer 132 is formed of the same material as the first dielectric layer 131. That is, the second dielectric layer 132 has electrical insulation properties, for example, a synthetic resin with epoxy resin as the main agent. The dielectric body 50 is composed of the first dielectric layer 131 and the second dielectric layer 132, the lower surface of the first dielectric layer 131 constitutes the dielectric main surface 51, and the upper surface of the second dielectric layer 132 constitutes the dielectric back surface 52. Each terahertz element 20A to 20C and the two conductive parts 110A, 120A, 110B, 120B, 110C, and 120C are sealed through two dielectric layers 131 and 132.

[0325] Furthermore, before forming the second dielectric layer 132, a bottom filler, such as an epoxy resin-based agent, may be filled below each of the terahertz elements 20A to 20C (between terahertz element 20A and the first dielectric layer 131 or the two conductive portions 110A and 120A, between terahertz element 20B and the first dielectric layer 131 or the two conductive portions 110B and 120B, and between terahertz element 20C and the first dielectric layer 131 or the two conductive portions 110C and 120C).

[0326] Incidentally, in this embodiment, an interface 133 may also be formed between the first dielectric layer 131 and the second dielectric layer 132. However, the two dielectric layers 131 and 132 may also be completely integrated without forming an interface 133.

[0327] like Figure 25 As shown, the manufacturing method of the terahertz device 10 includes a step of removing the support substrate 130 to expose the dielectric main surface 51 of the dielectric body 50 and the base end surfaces of the pillars 115 and 125. The step of removing the support substrate 130 is performed, for example, using a grinding machine. However, the method of removing the support substrate 130 is not limited to using a grinding machine.

[0328] like Figure 26 As shown, the manufacturing method of the terahertz device 10 includes the step of forming two electrodes 101A, 102A, 101B, 102B, 101C, and 102C. The step of forming the two electrodes 101A, 102A, 101B, 102B, 101C, and 102C is performed, for example, by electroless electroplating. In this embodiment, for example, the two electrodes 101A, 102A, 101B, 102B, 101C, and 102C are formed by electroless electroplating, whereby Ni, Pd, and Au layers are stacked in that order.

[0329] Furthermore, the method of forming the two electrodes 101A, 102A, 101B, 102B, 101C, and 102C is not limited to this. The Ni layer and the Au layer can be stacked sequentially, or only the Au layer can be stacked, or only Sn can be formed, or Sn can be formed on the Ni layer.

[0330] Next, using Figures 27-30 The process of forming the antenna substrate 70 will be explained.

[0331] The manufacturing method of the terahertz device 10 includes: a step of forming an antenna recess 80A in a separate antenna substrate 70A; a step of forming an antenna recess 80B in a separate antenna substrate 70B; and a step of forming an antenna recess 80C in a separate antenna substrate 70C. In this embodiment, since the separate antenna substrates 70A and 70C have the same shape, the method for forming the separate antenna substrate 70A and the method for forming the separate antenna substrate 70B will be described together.

[0332] like Figure 27 As shown, in the process of forming antenna recesses 80A and 80C, the antenna recess 80A having antenna surface 81A and the antenna recess 80C having antenna surface 81C are formed using molds DUA and DLA that are formed corresponding to antenna surfaces 81A and 81C. Furthermore, in the process of forming antenna recess 80B, the antenna recess 80B having antenna surface 81B is formed using molds DUB and DLB that are formed corresponding to antenna surface 81B.

[0333] The manufacturing method of the terahertz device 10 includes a step of forming metal films 134A, 134B, and 134C that constitute the reflective films 82A, 82B, and 82C. This step is performed after the antenna recesses 80A to 80C are formed.

[0334] like Figure 28 As shown, in this process, metal films 134A and 134C are formed on both the substrate main surface 71 and the antenna surface 81A and 81C of individual antenna substrates 70A and 70C. Additionally, metal film 134B is formed on both the substrate main surface 71 and the antenna surface 81B of individual antenna substrate 70B.

[0335] Next, as Figure 29As shown, the metal films 134A and 134C formed on the substrate main surface 71 of individual antenna substrates 70A and 70C, and the metal film 134B formed on the substrate main surface 71 of individual antenna substrate 70B, are removed. The specific method for removing the metal films 134A to 134C formed on each substrate main surface 71 is arbitrary; for example, it can be removed by patterning or by grinding. Thus, a reflective film 82A is formed only on antenna surface 81A, a reflective film 82B is formed only on antenna surface 81B, and a reflective film 82C is formed only on antenna surface 81C.

[0336] Furthermore, the steps for forming the reflective films 82A to 82C are not limited to those described above. For example, the manufacturing method of the terahertz device 10 may also include: a step of shielding the substrate main surface 71 of the individual antenna substrates 70A to 70C; and a step of forming the reflective films 82A to 82C on the antenna surfaces 81A to 81C by means of electron beam evaporation or the like. In this case, the step of removing the reflective films 82A to 82C formed on each substrate main surface 71 is unnecessary.

[0337] like Figure 30 As shown, the manufacturing method of the terahertz device 10 includes the following steps: after forming individual antenna substrates 70A to 70C, assembling individual antenna substrates 70A and 70B together, and assembling individual antenna substrates 70B and 70C together. Specifically, in this step, a bonding layer is used to bond individual antenna substrates 70A and 70B together, and to bond individual antenna substrates 70B and 70C together.

[0338] Next, the process of assembling the dielectric body 50 and the antenna substrate 70 together will be explained.

[0339] Although not illustrated, the method for manufacturing the terahertz device 10 includes a step of assembling a dielectric body 50 and an antenna substrate 70 on which reflective films 82A, 82B, and 82C are formed. In this step, the antenna substrate 70 is bonded to the dielectric body 50 using a bonding layer 91. Through the above steps, the terahertz device 10 can be manufactured.

[0340] (effect)

[0341] Next, using Figures 31-34 The function of the terahertz device 10 in this embodiment will be explained.

[0342] Figure 31 (a) schematically represents a terahertz element 20 surrounded by gas. Figure 31 (b) means Figure 31 A graph showing the change in refractive index in case (a). Figure 32(a) schematically represents a terahertz element 20 surrounded by a gas and dielectric body 50. Figure 32 (b) means Figure 32 A graph showing the change in refractive index in case (a).

[0343] In this embodiment, electromagnetic waves propagating towards the terahertz device 10 propagate through the dielectric body 50 and the gas space 92 to the reflective film 82, and are reflected by the reflective film 82 towards the terahertz element 20 (preferably the receiving point P1). Thus, the terahertz element 20 receives the electromagnetic waves. In this structure, the main surface 11 of the device can be considered the incident surface of the electromagnetic waves, and the inner surface of the reflective film 82 can be considered the reflecting surface that reflects the electromagnetic waves incident from the main surface 11 towards the terahertz element 20. Furthermore, the main surface 11 of the device can also be considered the input surface where the electromagnetic waves are input, and the terahertz device 10 can be considered a device that receives the electromagnetic waves input from the main surface 11.

[0344] Here, we will explain the case in which electromagnetic waves propagate from the reflective film 82 to the terahertz element 20 without passing through the dielectric 50, and the case in which electromagnetic waves propagate from the reflective film 82 to the terahertz element 20 via the dielectric 50.

[0345] like Figure 31 (a) and Figure 31 As shown in (b), assuming there is no dielectric 50 and the terahertz element 20 is surrounded by gas, the refractive index changes significantly at the inner and outer boundaries of the terahertz element 20, specifically at the boundary between the terahertz element 20 and the gas. In this case, electromagnetic waves are easily reflected at the inner and outer boundaries of the terahertz element 20, and are easily confined within the terahertz element 20. As a result, a large number of resonant modes easily occur within the terahertz element 20. Therefore, it is possible to generate electromagnetic waves at frequencies other than the target frequency within the terahertz element 20 and to receive these electromagnetic waves.

[0346] This is as follows in this embodiment: Figure 32 (a) and Figure 32 As shown in (b), when the terahertz element 20 is surrounded by a dielectric body 50 having a refractive index n2 that is lower than the element's refractive index n1 and higher than the gas's refractive index n3, the refractive index decreases in stages as one moves away from the terahertz element 20. Therefore, the change in refractive index at the inner and outer boundaries of the terahertz element 20, specifically at the boundary between the terahertz element 20 and the dielectric body 50, becomes smaller. Consequently, the reflection of electromagnetic waves at the inner and outer boundaries of the terahertz element 20 can be suppressed to a certain extent, thus reducing the likelihood of a large number of resonant modes occurring.

[0347] Figure 33 The cross-sectional structure of the comparative example terahertz device 10X is schematically shown. Figure 34 The cross-sectional structure of the terahertz device 10 of this embodiment is schematically shown. Figure 33 and Figure 34 It is a cross-sectional structure formed by cutting a plane along the arrangement direction of the antenna substrate 70 (70X) and the height direction of the terahertz device 10 (10X) at the position where the terahertz element 20 is disposed.

[0348] like Figure 33 As shown, the comparative example terahertz device 10X has an antenna substrate 70X. The antenna substrate 70X is constructed by combining individual antenna substrates 70P, 70Q, and 70R in a row. Figure 33 In the antenna substrate 70X shown, the individual antenna substrate 70Q is sandwiched between the individual antenna substrate 70P and the individual antenna substrate 70R.

[0349] These individual antenna substrates 70P, 70Q, and 70R have the same shape and are provided with a generally hemispherical antenna recess 80X. The antenna recess 80X is recessed from the respective base main surface 71X of the individual antenna substrates 70P, 70Q, and 70R toward the base back surface 72X, and opens in the base main surface 71X. That is, the opening end of the antenna recess 80X of each individual antenna substrate 70P, 70Q, and 70R is surrounded by the base main surface 71X all over its entire circumference. Therefore, in each individual antenna substrate 70P, 70Q, and 70R, a peripheral wall portion 78X including the base main surface 71X is formed all over the entire circumference of the opening end of the antenna recess 80X.

[0350] like Figure 33 As shown, a peripheral wall portion 78X of the individual antenna base 70P and a peripheral wall portion 78X of the individual antenna base 70Q are inserted between the antenna recess 80X of the individual antenna base 70P and the antenna recess 80X of the individual antenna base 70Q. Furthermore, a peripheral wall portion 78X of the individual antenna base 70Q and a peripheral wall portion 78X of the individual antenna base 70R are also inserted between the antenna recess 80X of the individual antenna base 70Q and the antenna recess 80X of the individual antenna base 70R.

[0351] This is as follows in this embodiment: Figure 34As shown, the aforementioned peripheral wall portion 78X is not provided between individual antenna bases 70A and 70B, nor is it provided between individual antenna bases 70B and 70C. That is, adjacent antenna recesses 80A and 80B in the arrangement direction (y-direction) of individual antenna bases 70A and 70B are in contact, and adjacent antenna recesses 80B and 80C in the arrangement direction (y-direction) of individual antenna bases 70B and 70C are in contact. Furthermore, the shape that is a part of the antenna surfaces 81A to 81C of each antenna recess 80A to 80C is lacking in the arrangement direction (y-direction in this embodiment) of individual antenna bases 70A to 70C. With this structure, as... Figure 33 and Figure 34 As shown, the distance between the receiving point P1 of terahertz element 20A and the receiving point P1 of terahertz element 20B in this embodiment, i.e., the inter-element distance DE1, is smaller than the inter-element distance DEX1 between terahertz element 20A and terahertz element 20B in the comparative example. Furthermore, the inter-element distance DE2 between the receiving point P1 of terahertz element 20B and the receiving point P1 of terahertz element 20C in this embodiment is smaller than the inter-element distance DEX2 between terahertz element 20B and terahertz element 20C in the comparative example. That is, compared to the terahertz device 10X of the comparative example, the terahertz device 10 of this embodiment can bring adjacent terahertz elements 20A and 20B closer together, and can also bring adjacent terahertz elements 20B and 20C closer together.

[0352] (Effect)

[0353] The terahertz device 10 according to this embodiment can achieve the following effects.

[0354] (1-1) Viewed from the z-direction, the dimensions of the reflective films 82A and 82B along the arrangement direction of antenna surfaces 81A to 81C, in other words, along the arrangement direction of reflective films 82A to 82C, i.e., the first direction, are smaller than the dimensions of the reflective films 82A and 82B along a direction different from the first direction, i.e., the second direction, viewed from the z-direction. In this embodiment, the lengths LAY of reflective film 82A and LBY of reflective film 82B in the y-direction, which is the arrangement direction of reflective films 82A to 82C, are shorter than the lengths LAX of reflective film 82A and LBX of reflective film 82B in the x-direction, which is different from the y-direction.

[0355] Based on this structure, compared to the case where the lengths LAY of reflective film 82A and LBY of reflective film 82B are each equal, and the lengths LAX of reflective film 82A and LBX of reflective film 82B are each equal, the distance between the receiving points P1 of adjacent terahertz elements 20A and 20B in the first direction (y-direction in this embodiment), i.e., the inter-element distance DE1, can be reduced. Therefore, the resolution within the detection range of the electromagnetic waves detected by the terahertz detection device 10 can be improved.

[0356] (1-2) Viewed from above, the portions of the two ends of the arc-shaped outer periphery of the reflective film 82A in the first direction (y direction in this embodiment) are formed into arcs with central angles θa1 and θa2 less than 180°. Viewed from above, the portions of the two ends of the arc-shaped outer periphery of the reflective film 82B in the first direction are formed into arcs with central angles θb1 and θb2 less than 180°.

[0357] According to this structure, reflective films 82A and 82B maintain a spherical shape with a certain curvature, and are able to be formed such that the lengths LAY and LBY of reflective film 82A are each shorter than the lengths LAX and LBY of reflective film 82A.

[0358] (1-3) The gas space 92A, defined by the antenna surface 81A and the dielectric body 50, and the gas space 92B, defined by the antenna surface 81B and the dielectric body 50, are connected in a first direction (y-direction in this embodiment) at the boundary between the reflective film 82A (antenna surface 81A) and the reflective film 82B (antenna surface 81B). Based on this structure, the effects described in (1-1) above can be obtained.

[0359] (1-4) When the cross-section of the individual antenna substrate 70A is cut along the planes in the y and z directions using the center point P2 of the reflective film 82A and the center point P2 of the reflective film 82B, the portions connecting the two ends of the reflective film 82A in the y direction and the portions connecting the two ends of the reflective film 82B in the y direction are respectively formed as arcs with central angles θz1 and θz2 less than 180°.

[0360] Based on this structure, the reflective film 82A and the reflective film 82B can maintain a spherical shape formed with a certain curvature, and the reflective film 82A and the reflective film 82B can be formed such that the lengths LAY of the reflective film 82A and LBY of the reflective film 82B are each shorter than the lengths LAX of the reflective film 82A and LBY of the reflective film 82B.

[0361] (1-5) Viewed from the z direction, the boundaries of the reflective film 82A and the reflective film 82B, namely the opening end 82Aa of the reflective film 82A and the opening end 82Ba of the reflective film 82B, are respectively formed as straight lines.

[0362] Based on this structure, the reflective film 82A and the reflective film 82B can maintain a spherical shape formed with a certain curvature, and the reflective film 82A and the reflective film 82B can be formed such that the lengths LAY of the reflective film 82A and LBY of the reflective film 82B are each shorter than the lengths LAX of the reflective film 82A and LBY of the reflective film 82B.

[0363] (1-6) Viewed from the z-direction, the dimensions of the reflective films 82B and 82C along the first direction are smaller than those along the second direction. In this embodiment, the lengths LBY and LCY of the reflective film 82B and 82C in the y-direction (the direction in which the reflective films 82A-82C are arranged) are respectively shorter than the lengths LBX and LCX of the reflective film 82B and 82C in the x-direction (a direction different from the y-direction).

[0364] Based on this structure, compared to the case where the lengths LBY and LCY of the reflective film 82B and 82C are each equal, and the lengths LBX and LCX of the reflective film 82B and 82C are each equal, the distance between the receiving points P1 of adjacent terahertz elements 20B and 20C in the first direction (y-direction in this embodiment), i.e., the inter-element distance DE2, can be reduced. Therefore, the resolution within the detection range of the electromagnetic waves detected by the terahertz detection device 10 can be improved.

[0365] (1-7) When viewed by cutting a section of the individual antenna substrate 70C along the y and z directions using a plane passing through the center point P2 of the reflective film 82C, the portion connecting the two ends of the reflective film 82C in the y direction forms an arc shape with a central angle θz3 of less than 180°.

[0366] Based on this structure, the reflective film 82C can maintain a spherical shape with a certain curvature, and the reflective film 82C can be formed such that the length LCY of the reflective film 82C is shorter than the length LCX of the reflective film 82C.

[0367] (1-8) Viewed from the z direction, the opening ends 82Bb of the reflective film 82B and 82Ca of the reflective film 82C, which serve as the boundary between the reflective film 82B and the reflective film 82C, are respectively formed as straight lines.

[0368] Based on this structure, the reflective film 82C can maintain a spherical shape with a certain curvature, and the reflective film 82C can be formed such that the length LCY of the reflective film 82C is shorter than the length LCX of the reflective film 82C.

[0369] (1-9) The terahertz device 10 has a dielectric body 50 as a holding member on the main surface 71 of the substrate mounted on individual antenna substrates 70A to 70C. The dielectric body 50 holds each terahertz element 20A to 20C.

[0370] According to this structure, each terahertz element 20A to 20C is held by a dielectric body 50, which serves as a common holding member. Therefore, compared with a structure in which each terahertz element 20A to 20C has a dielectric body that serves as an independent holding member, the assembly time of the dielectric body 50 and the antenna substrate 70 can be reduced.

[0371] (1-10) The terahertz device 10 includes: a plurality of terahertz elements 20A to 20C for receiving electromagnetic waves; a dielectric body 50 made of dielectric material surrounding each terahertz element 20A to 20C; gas spaces 92A to 92C in which gas exists; and reflective films 82A to 82C constituting a first reflecting surface to a third reflecting surface. The reflective film 82A has a portion opposite to the terahertz element 20A separated by the dielectric body 50 and the gas space 92A, and is a film that reflects electromagnetic waves propagating in the dielectric body 50 and the gas space 92A to the receiving point P1 of the terahertz element 20A. The reflective film 82B has a portion opposite to the terahertz element 20B separated by the dielectric body 50 and the gas space 92B, and is a film that reflects electromagnetic waves propagating in the dielectric body 50 and the gas space 92B to the receiving point P1 of the terahertz element 20B. The reflective film 82C has a portion that faces the terahertz element 20C across the dielectric body 50 and the gas space 92C, and is a film that reflects electromagnetic waves propagating in the dielectric body 50 and the gas space 92C to the receiving point P1 of the terahertz element 20C. Furthermore, assuming that the refractive index of each terahertz element 20A-20C is the element refractive index n1, the refractive index of the gas in the gas spaces 92A-92C is the gas refractive index n3, and the refractive index of the dielectric body 50 is the dielectric refractive index n2, then n1>n2>n3.

[0372] Based on this structure, since the terahertz elements 20A to 20C are surrounded by a dielectric body 50 having a refractive index between the element's refractive index n1 and the gas's refractive index n3, the variation in refractive index at the inner and outer boundaries of the terahertz elements 20A to 20C can be minimized. Therefore, excessive electromagnetic wave reflection at the inner and outer boundaries of the terahertz elements 20A to 20C can be suppressed, and the occurrence of numerous resonant modes within the terahertz elements 20A to 20C due to excessive electromagnetic wave reflection can be suppressed. Thus, the generation of electromagnetic waves at frequencies other than the target frequency can be suppressed.

[0373] (1-11) The dielectric body 50 has a dielectric main surface 51 opposite to the reflective films 82A-82C and a dielectric back surface 52 opposite to the dielectric main surface 51. The terahertz device 10 includes: a separate antenna substrate 70A having an antenna surface 81A that is concave in a direction away from the terahertz element 20A; a separate antenna substrate 70B having an antenna surface 81B that is concave in a direction away from the terahertz element 20B; and a separate antenna substrate 70C having an antenna surface 81C that is concave in a direction away from the terahertz element 20C. The reflective films 82A-82C are films formed on the antenna surfaces 81A-81C, and the gas spaces 92A-92C are divided by the dielectric main surface 51 and the antenna surfaces 81A-81C.

[0374] Based on this structure, since the gas spaces 92A-92C are divided by the dielectric main surface 51 and the antenna surfaces 81A-81C, electromagnetic waves emanating from the dielectric main surface 51 reach the reflective films 82A-82C through the gas spaces 92A-92C. Thus, the effect of (1-10) can be achieved.

[0375] (1-12) The dielectric body 50 and the antenna substrate 70 are separate, and the terahertz device 10 has a bonding layer 91 as a fixing part for fixing the dielectric body 50 and the antenna substrate 70. According to this structure, the positional offset between the dielectric body 50 and the antenna substrate 70 can be suppressed by the bonding layer 91, and thus the positional offset between the terahertz element 20A and the reflective film 82A, the positional offset between the terahertz element 20B and the reflective film 82B, and the positional offset between the terahertz element 20C and the reflective film 82C can be suppressed respectively.

[0376] (1-13) Reflective film 82A is formed on antenna surface 81A, but not on the substrate main surface 71 of the separate antenna substrate 70A. Reflective film 82B is formed on antenna surface 81B, but not on the substrate main surface 71 of the separate antenna substrate 70B. Reflective film 82C is formed on antenna surface 81C, but not on the substrate main surface 71 of the separate antenna substrate 70C.

[0377] Based on this structure, electromagnetic waves can be prevented from being reflected by the reflective films 82A-82C formed on the main surface 71 of the individual antenna substrates 70A-70C. Therefore, adverse conditions caused by unwanted reflected waves can be suppressed, such as the occurrence of unwanted standing waves.

[0378] (1-14) The reflective films 82A to 82C are parabolic antenna shapes. Based on this structure, electromagnetic waves can be appropriately reflected to the receiving point P1 of the terahertz elements 20A to 20C.

[0379] (1-15) The reflective films 82A to 82C are in an electrically floating state. Based on this structure, it is possible to suppress adverse conditions such as the absorption of electromagnetic waves by the reflective films 82A to 82C.

[0380] (1-16) The individual antenna substrates 70A to 70C are each formed of insulating material. Based on this structure, it is possible to suppress the electrical connection between the reflective films 82A to 82C and certain components via the individual antenna substrates 70A to 70C.

[0381] (1-17) The terahertz device 10 has conductive portions 110A, 120A, 110B, 120B, 110C, and 120C disposed within the dielectric body 50 and electrically connected to each terahertz element 20. According to this structure, the conductive portions 110A, 120A, 110B, 120B, 110C, and 120C are less likely to come into contact with the reflective films 82A to 82C located outside the dielectric body 50. Therefore, electrical connection between the conductive portions 110A, 120A, 110B, 120B, 110C, and 120C and the reflective films 82A to 82C can be suppressed.

[0382] (1-18) The dielectric body 50, viewed from the z-direction, has protrusions 61 and 62 that protrude laterally from the antenna substrate 70. On the protrusion surfaces 51a and 51b, corresponding to the protrusions 61 and 62 in the main dielectric surface 51, electrodes 101A, 102A, 101B, 102B, 101C, and 102C are formed that are electrically connected to the conductive portions 110A, 120A, 110B, 120B, 110C, and 120C. Based on this structure, the electrodes 101A, 102A, 101B, 102B, 101C, and 102C, and the conductive portions 110A, 120A, 110B, 120B, 110C, and 120C, can achieve electrical connection between the terahertz elements 20A to 20C and the outside.

[0383] (1-19) Terahertz elements 20A to 20C each have pads 33a and 34a formed on the main surface 21 of the element. Conductive portions 110A, 120A, 110B, 120B, 110C, and 120C have element-facing portions 111 and 121, which, when viewed from the z-direction, extend in the protruding direction (x-direction) of protrusions 61 and 62, overlapping with both terahertz elements 20A to 20C and electrodes 101A, 102A, 101B, 102B, 101C, and 102C, and are facing each other in the z-direction relative to pads 33a and 34a. Terahertz elements 20A to 20C are flip-chip mounted on the component counterparts 111 and 121 via bumps 114 and 124 provided between pads 33a and 34a and conductive portions 110A, 120A, 110B, 120B, 110C, and 120C. This allows the terahertz elements 20A to 20C to be electrically connected to the two electrodes 101A, 102A, 101B, 102B, 101C, and 102C.

[0384] In particular, since the terahertz elements 20A to 20C are mounted using flip-chip mounting, signal transmission speed can be increased compared to wire bonding-based mounting. That is, in the high-frequency band of electromagnetic waves known as the terahertz band, there are concerns about the signal transmission speed being limited by the wires in wire bonding-based mounting. In this respect, flip-chip mounting, which does not use wires, does not produce the aforementioned problems. Therefore, high-speed signal transmission can be achieved.

[0385] (1-20) The conductive portions 110A and 120A include: electrode-facing portions 112 and 122 opposite to the electrodes 101A and 102A; and connecting portions 113 and 123 extending in the x-direction as a structure connecting the element-facing portions 111 and 121 to the electrode-facing portions 112 and 122. When the y-direction of the conductive portions 110A and 120A is taken as the width direction, at least a portion of the connecting portions 113 and 123 is formed to be narrower than the width of the element-facing portions 111 and 121. According to this structure, since part or all of the connecting portions 113 and 123 overlap with the reflective film 82A, the connecting portions 113 and 123 may cause electromagnetic wave blockage (hereinafter also referred to as obstruction).

[0386] In this respect, since at least a portion of the connecting portions 113 and 123 is formed to be narrower than the width of the opposing portions 111 and 121, the area to be blocked can be reduced. As a result, the blockage can be mitigated.

[0387] Furthermore, since the component-facing portions 111 and 121 are wider than the connecting portions 113 and 123, the contact area can be larger. As a result, electrical connections can be appropriately made between the pads 33a and 34a of the bumps 114 and 124 and the component-facing portions 111 and 121.

[0388] Furthermore, conductive portions 110B, 120B, 110C, and 120C, like conductive portions 110A and 120A, also have electrode-facing portions 112 and 122 and connection portions 113 and 123. Therefore, similar to conductive portions 110A and 120A, blockage can be reduced, and appropriate electrical connections can be made between the pads 33a and 34a of the bumps 114 and 124 and the component-facing portions 111 and 121.

[0389] (1-21) The electrode-facing portions 112 and 122 of the conductive portions 110A and 120A are wider than the connecting portions 113 and 123. This structure allows for a larger contact area, enabling appropriate electrical connection between the electrode-facing portions 112 and 122 and the electrodes 101A and 102A. Furthermore, since the electrode-facing portions 112 and 122 of the conductive portions 110B, 120B, 110C, and 120C are also wider than the connecting portions 113 and 123, the aforementioned effects are also achieved.

[0390] (1-22) The first connecting portion 113 has: a first connecting body portion 113a, which is narrower than the width of the first element opposing portion 111; and a first element-side tapered portion 113b connecting the first connecting body portion 113a and the first element opposing portion 111. The first element-side tapered portion 113b is formed such that its width gradually increases from the first connecting body portion 113a toward the first element opposing portion 111. According to this structure, reflected waves generated in the first conductive portions 110A to 110C can be reduced. The same applies to the second connecting portion 123.

[0391] (1-23) The first connecting body portion 113a is narrower than the width of the first electrode opposing portion 112. The first connecting portion 113 has a first electrode-side tapered portion 113c that connects the first connecting body portion 113a to the first electrode opposing portion 112. The first electrode-side tapered portion 113c is formed such that its width gradually increases from the first connecting body portion 113a toward the first electrode opposing portion 112. With this structure, reflected waves generated in the first conductive portions 110A to 110C can be reduced. The same applies to the second connecting portion 123.

[0392] (1-24) The first pad 33a and the first component opposite portion 111 extend in the x-direction, and multiple first bumps 114 are arranged in the x-direction. Similarly, the second pad 34a and the second component opposite portion 121 extend in the x-direction, and multiple second bumps 124 are arranged in the x-direction. As a result, the contact area can be increased, and the contact resistance can be reduced.

[0393] In the current structure where the two pads 33a and 34a are spaced apart in the y-direction, extending the pads 33a and 34a in the y-direction shortens their distance, raising concerns about short circuits or interference between the receiving point P1 and the pads 33a and 34a hindering electromagnetic wave propagation. In this embodiment, extending the pads in the x-direction, which is orthogonal to the relative directions of the two pads 33a and 34a, suppresses these problems.

[0394] [Second Implementation]

[0395] Reference Figures 35-45 The terahertz device 10 of the second embodiment will be described below. The main difference between the terahertz device 10 of this embodiment and the terahertz device 10 of the first embodiment is the structure of the antenna substrate 70. In the following description, some components common to the terahertz device 10 of the first embodiment will be labeled with the same reference numerals, and their description will be omitted. Furthermore, although the structure of the antenna substrate 70 differs from that of the antenna substrate 70 of the first embodiment, the multiple individual antenna substrates are sequentially labeled 70A, 70B, 70C, etc., for identification.

[0396] like Figure 35 and Figure 41 As shown, the terahertz device 10 includes a plurality of (eight in this embodiment) terahertz elements 20, a dielectric body 50 as an example of a holding member, an antenna substrate 70, a reflective film 82, and a gas space 92.

[0397] like Figure 35 As shown, the plurality of terahertz elements 20 include terahertz element 20A, terahertz element 20B, terahertz element 20C, terahertz element 20D, terahertz element 20E, terahertz element 20F, terahertz element 20G, and terahertz element 20H. Each terahertz element 20A to 20H has the same structure as the terahertz element 20 in the first embodiment.

[0398] The dielectric body 50 surrounds each of the plurality of terahertz elements 20. For example... Figure 41 and Figure 42As shown, the dielectric body 50 surrounds the entire terahertz element 20E, covering the main surface 21, back surface 22, and side surfaces 23-26 of the terahertz element 20E.

[0399] The main surface 21, back surface 22, and side surfaces 23-26 of the terahertz element 20E are in contact with the dielectric body 50. That is, in this embodiment, the dielectric body 50, like in the first embodiment, surrounds the terahertz element 20E in a manner that does not create a gap between the dielectric body 50 and the terahertz element 20E. In other words, the dielectric body 50 seals the terahertz element 20E.

[0400] Furthermore, although not shown, similar to terahertz element 20E, dielectric body 50 surrounds the entirety of each terahertz element 20A-20D, 20F-20H, covering the main surface 21, back surface 22, and side surfaces 23-26 of each terahertz element 20A-20D, 20F-20H. That is, dielectric body 50 seals each of the terahertz elements 20A-20D, 20F-20H.

[0401] like Figure 35 As shown, the dielectric body 50 is formed, for example, as a plate with the z-direction as its thickness direction. Specifically, the dielectric body 50 is a rectangular plate with the y-direction as its length direction and the x-direction as its width direction. The dielectric body 50 is configured to cover the entire antenna substrate 70 from above. In this embodiment, the dielectric body 50 has a structure that protrudes from both sides of the antenna substrate 70 in the x-direction and from both sides of the antenna substrate 70 in the y-direction.

[0402] like Figure 41 and Figure 42 As shown, the dielectric body 50 has a dielectric main surface 51 and a dielectric back surface 52 as a surface intersecting the z-direction. The dielectric main surface 51 and the dielectric back surface 52 are, for example, orthogonal with respect to the z-direction. The dielectric main surface 51 faces downward. The dielectric back surface 52 is the surface opposite to the dielectric main surface 51 and faces upward. In this embodiment, the dielectric back surface 52 constitutes the device main surface 11.

[0403] like Figure 35 As shown, the dielectric body 50 has: a first dielectric side surface 53 and a second dielectric side surface 54 as end faces in the x-direction; and a third dielectric side surface 55 and a fourth dielectric side surface 56 as end faces in the y-direction. Each dielectric side surface 53 to 56 constitutes a part of the device side surfaces 13 to 16. In this embodiment, the first dielectric side surface 53 and the second dielectric side surface 54 are orthogonal to the third dielectric side surface 55 and the fourth dielectric side surface 56.

[0404] like Figure 41 and Figure 42As shown, the terahertz element 20E, similar to the first embodiment, is disposed within the dielectric body 50 with its main surface 21 facing the dielectric main surface 51. The terahertz element 20E is positioned between the dielectric main surface 51 and the dielectric back surface 52. In this embodiment, similar to the first embodiment, the length of the dielectric body 50 in the z-direction, i.e., the dielectric thickness D2, is set in a manner that satisfies the resonance condition of the electromagnetic waves received by the terahertz element 20E. Furthermore, the terahertz elements 20A to 20D, and 20F to 20H, are disposed within the dielectric body 50 in the same manner as the terahertz element 20E.

[0405] like Figure 35 As shown, terahertz elements 20A, 20B, 20C, and 20D are arranged at intervals in the y direction while being aligned with each other in the x direction.

[0406] Terahertz elements 20E, 20F, 20G, and 20H are arranged spaced apart from each other in the y-direction while being aligned in the x-direction. In this embodiment, the spacing (inter-element distance) of each terahertz element 20E to 20H in the y-direction is equal to the spacing (inter-element distance) of each terahertz element 20A to 20D in the y-direction. For example, if the difference between the average spacing of each terahertz element 20E to 20H in the y-direction and the average spacing of each terahertz element 20A to 20D in the y-direction is within 5% of the average spacing of each terahertz element 20A to 20D in the y-direction, it can be said that the spacing of each terahertz element 20E to 20H in the y-direction is equal to the spacing of each terahertz element 20A to 20D in the y-direction. Here, the spacing (inter-element distance) in the y-direction is the distance between the receiving points P1 of adjacent terahertz elements 20 in the y-direction.

[0407] Each terahertz element 20A-20D is arranged at a distance from each terahertz element 20E-20H in the x-direction. In this embodiment, each terahertz element 20A-20D is arranged closer to the first dielectric side 53 than each terahertz element 20E-20H.

[0408] Terahertz elements 20A-20D and 20E-20H are arranged at intervals in the x-direction, staggered in the y-direction. In this embodiment, viewed from above, terahertz elements 20A-20D and 20E-20H are arranged alternately in the y-direction. Terahertz elements 20A-20D are arranged relative to terahertz elements 20E-20H, biased towards the third dielectric side 55. More specifically, terahertz element 20A is arranged in the y-direction closer to the third dielectric side 55 than terahertz element 20E. Terahertz element 20B is arranged in the y-direction between terahertz elements 20E and 20F. Terahertz element 20C is arranged in the y-direction between terahertz elements 20F and 20G. Terahertz element 20D is arranged in the y-direction between terahertz elements 20G and 20H.

[0409] like Figure 36 and Figure 37 As shown, in this embodiment, the antenna substrate 70, viewed from above, is approximately rectangular in shape with the y-direction being the longer side and the x-direction the shorter side. More specifically, a first step portion 79A and a second step portion 79B are separately provided at both ends of the antenna substrate 70 in the y-direction. The first step portion 79A is provided on the third substrate side surface 75T of the antenna substrate 70, and the second step portion 79B is provided on the fourth substrate side surface 76T of the antenna substrate 70. The first step portion 79A is provided such that the portion of the third substrate side surface 75T biased towards the first substrate side surface 73T is closer to the first dielectric side surface 53 of the dielectric body 50 than the portion biased towards the second substrate side surface 74T. The second step portion 79B is provided such that the portion of the fourth substrate side surface 76T biased towards the first substrate side surface 73T is closer to the first dielectric side surface 53 than the portion biased towards the second substrate side surface 74T. Therefore, the first substrate side surface 73T of the antenna substrate 70 is formed offset from the second substrate side surface 74T in the y-direction from the first dielectric side surface 53.

[0410] The antenna substrate 70 of this embodiment is similar to that of the antenna substrate 70 of the first embodiment, and is formed of, for example, an insulating material. Specifically, the antenna substrate 70 is formed of a dielectric material, such as a synthetic resin like epoxy resin. For example, glass epoxy resin can be used as the epoxy resin. However, the material of the antenna substrate 70 is not limited to this and can be any material, such as Si, Teflon, glass, etc. Furthermore, the color of the antenna substrate 70 can be any color, such as black.

[0411] The antenna substrate 70 in this embodiment is composed of a combination of multiple (eight in this embodiment) individual antenna substrates 70A to 70H. More specifically, the antenna substrate 70 has rows of individual antenna substrates 70A to 70D and rows of individual antenna substrates 70E to 70H.

[0412] Individual antenna substrates 70A to 70D form the structure constituting the first substrate side surface 73T and are arranged along the y-direction. Individual antenna substrate 70A forms the structure constituting the third substrate side surface 75T, and individual antenna substrate 70D forms the structure constituting the fourth substrate side surface 76T. Individual antenna substrate 70B is adjacent to individual antenna substrates 70A and 70C. That is, individual antenna substrate 70B is sandwiched between individual antenna substrates 70A and 70C. Individual antenna substrate 70C is adjacent to individual antenna substrates 70B and 70D. That is, individual antenna substrate 70C is sandwiched between individual antenna substrates 70B and 70D.

[0413] Individual antenna substrates 70E to 70H form the structure constituting the second substrate side surface 74T and are arranged along the y-direction. Individual antenna substrate 70E forms the structure constituting the third substrate side surface 75T. That is, the third substrate side surface 75T is composed of individual antenna substrates 70A and 70E. Individual antenna substrate 70H forms the fourth substrate side surface 76T. That is, the fourth substrate side surface 76T is composed of individual antenna substrates 70D and 70H. Individual antenna substrate 70F is adjacent to individual antenna substrates 70E and 70G. That is, individual antenna substrate 70F is sandwiched between individual antenna substrates 70E and 70G. Individual antenna substrate 70G is adjacent to individual antenna substrates 70F and 70H. That is, individual antenna substrate 70G is sandwiched between individual antenna substrates 70F and 70H.

[0414] In this embodiment, individual antenna substrates 70A-70D are staggered from individual antenna substrates 70E-70H in the y-direction. More specifically, viewed from the x-direction, individual antenna substrates 70A overlap with individual antenna substrates 70E and 70F, individual antenna substrate 70B overlaps with individual antenna substrates 70F and 70G, and individual antenna substrate 70C overlaps with individual antenna substrates 70G and 70H. Specifically, in the y-direction, individual antenna substrate 70A is positioned offset from individual antenna substrate 70E by a third substrate side 75T and from individual antenna substrate 70F by a fourth substrate side 76T. Individual antenna substrate 70A is in contact with individual antenna substrate 70E. Individual antenna substrate 70B is positioned offset from individual antenna substrate 70F by a third substrate side 75T and from individual antenna substrate 70G by a fourth substrate side 76T. Individual antenna substrate 70B is in contact with individual antenna substrates 70E and 70F. Individual antenna substrate 70C is positioned relative to individual antenna substrate 70G, offset from the third substrate side 75T, and relative to individual antenna substrate 70H, offset from the fourth substrate side 76T. Individual antenna substrate 70C is in contact with individual antenna substrates 70F and 70G. Individual antenna substrate 70H is positioned relative to individual antenna substrate 70D, offset from the third substrate side 75T. Individual antenna substrate 70D is in contact with individual antenna substrates 70G and 70H.

[0415] like Figure 35 As shown, individual antenna substrate 70A is configured opposite to terahertz element 20A in the thickness direction (z-direction). Individual antenna substrate 70B is configured opposite to terahertz element 20B in the thickness direction (z-direction). Individual antenna substrate 70C is configured opposite to terahertz element 20C in the thickness direction (z-direction). Individual antenna substrate 70D is configured opposite to terahertz element 20D in the thickness direction (z-direction). Individual antenna substrate 70E is configured opposite to terahertz element 20E in the thickness direction (z-direction). Individual antenna substrate 70F is configured opposite to terahertz element 20F in the thickness direction (z-direction). Individual antenna substrate 70G is arranged opposite to terahertz element 20G in the thickness direction (z-direction). Individual antenna substrate 70H is arranged opposite to terahertz element 20H in the thickness direction (z-direction). In this embodiment, individual antenna substrates 70A to 70H are respectively arranged below each terahertz element 20A to 20H.

[0416] like Figures 41-43As shown, the antenna substrate 70, similar to the first embodiment, has a plurality of antenna recesses 80 recessed from the substrate main surface 71T to the substrate back surface 72T. Specifically, as... Figure 36 and Figure 37 As shown, in this embodiment, individual antenna substrate 70A has an antenna recess 80A, individual antenna substrate 70B has an antenna recess 80B, individual antenna substrate 70C has an antenna recess 80C, individual antenna substrate 70D has an antenna recess 80D, individual antenna substrate 70E has an antenna recess 80E, individual antenna substrate 70F has an antenna recess 80F, individual antenna substrate 70G has an antenna recess 80G, and individual antenna substrate 70H has an antenna recess 80H. That is, each individual antenna substrate 70 has one antenna recess 80.

[0417] like Figures 41-43 As shown, the antenna recess 80, similar to that in the first embodiment, has an antenna surface 81 that faces the terahertz element 20 across the dielectric body 50 and the gas space 92. Specifically, as... Figure 36 and Figure 37 As shown, in this embodiment, antenna recess 80A has antenna surface 81A, antenna recess 80B has antenna surface 81B, antenna recess 80C has antenna surface 81C, and antenna recess 80D has antenna surface 81D. Additionally, antenna recess 80E has antenna surface 81E, antenna recess 80F has antenna surface 81F, antenna recess 80G has antenna surface 81G, and antenna recess 80H has antenna surface 81H. These antenna surfaces 81A to 81H, viewed from above, have the same shape as the openings of the corresponding antenna recesses 80A to 80H.

[0418] like Figures 41-43 As shown, similarly to the first embodiment, the reflective film 82 is formed on the antenna surface 81. The reflective film 82 is formed over the entire antenna surface 81. On the other hand, the reflective film 82 is not formed on the main surface 71T of the substrate. That is, the reflective film 82 has a shape that is substantially the same as that of the antenna surface 81. The reflective film 82 is formed of the same material as the reflective film 82 of the first embodiment.

[0419] The reflective film 82 includes: a reflective film 82A formed on antenna surface 81A; a reflective film 82B formed on antenna surface 81B; a reflective film 82C formed on antenna surface 81C; a reflective film 82D formed on antenna surface 81D; a reflective film 82E formed on antenna surface 81E; a reflective film 82F formed on antenna surface 81F; a reflective film 82G formed on antenna surface 81G; and a reflective film 82H formed on antenna surface 81H. In this embodiment, reflective films 82A to 82H are formed as a single integral component.

[0420] Reflective film 82A has a shape substantially the same as antenna surface 81A, reflective film 82B has a shape substantially the same as antenna surface 81B, reflective film 82C has a shape substantially the same as antenna surface 81C, reflective film 82D has a shape substantially the same as antenna surface 81D, reflective film 82E has a shape substantially the same as antenna surface 81E, reflective film 82F has a shape substantially the same as antenna surface 81F, reflective film 82G has a shape substantially the same as antenna surface 81G, and reflective film 82H has a shape substantially the same as antenna surface 81H. In other words, reflective films 82A to 82H are each a parabolic mirror, curved in a mortar-like shape. Reflective films 82A to 82H are each partially missing from the top. Reflective films 82A to 82H are each curved in a manner that convexes towards the back surface 12 of the device. Reflective film 82 opens in one direction (upward in this embodiment).

[0421] like Figures 41-43 As shown, the reflective film 82 is opposite to the dielectric body 50 in the z-direction. In other words, the reflective film 82 is positioned opposite to the dielectric body 50.

[0422] Electromagnetic waves reflected by reflective film 82 are output to receiving point P1. Specifically, electromagnetic waves reflected by reflective film 82A are output to receiving point P1 of terahertz element 20A. Electromagnetic waves reflected by reflective film 82B are output to receiving point P1 of terahertz element 20B. Electromagnetic waves reflected by reflective film 82C are output to receiving point P1 of terahertz element 20C. Electromagnetic waves reflected by reflective film 82D are output to receiving point P1 of terahertz element 20D. Electromagnetic waves reflected by reflective film 82E are output to receiving point P1 of terahertz element 20E. Electromagnetic waves reflected by reflective film 82F are output to receiving point P1 of terahertz element 20F. Electromagnetic waves reflected by reflective film 82G are output to receiving point P1 of terahertz element 20G. Electromagnetic waves reflected by reflective film 82H are output to receiving point P1 of terahertz element 20H.

[0423] The arrangement of the reflective film 82 and the terahertz element 20 is the same as in the first embodiment. Furthermore, the dimensional relationship between the reflective film 82 and the terahertz element 20 is also the same as in the first embodiment. That is, viewed from above, the reflective films 82A to 82H are each formed to be larger than each of the terahertz elements 20A to 20H.

[0424] The antenna substrate 70 and the dielectric body 50 are fixed via a bonding layer 91, similar to the first embodiment. The bonding layer 91 is configured such that it does not protrude inward from the reflective film 82 (in other words, from the terahertz element 20 side).

[0425] like Figures 38-40 As shown, in this embodiment, the antenna substrate 70 uses three different antenna substrates.

[0426] like Figure 38 As shown, the individual antenna substrate 70E has a main surface 71 and a back surface 72, which are surfaces intersecting the z-direction. The main surface 71 and the back surface 72 are respectively surfaces intersecting the z-direction, and in this embodiment, they are orthogonal relative to the z-direction. The main surface 71 and the back surface 72, viewed from the z-direction, are both pentagonal in shape. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, of the same shape. However, this is not a limitation, and the main surface 71 and the back surface 72 may also have different shapes.

[0427] The individual antenna substrate 70E has a first substrate side surface 73, a second substrate side surface 74, a third substrate side surface 75, and a fourth substrate side surface 76 as substrate sides. These substrate side surfaces 73-76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each substrate side surface 73-76 is a surface orthogonal to the relative direction of the substrate main surface 71 and the substrate back surface 72. Each substrate side surface 73-76 connects the substrate main surface 71 and the substrate back surface 72.

[0428] The third base side surface 75 and the fourth base side surface 76 are the two end surfaces in the y-direction of the individual antenna base 70E. The third base side surface 75 constitutes a part of the third base side surface 75T of the antenna base 70. Viewed from the z-direction, the third base side surface 75 and the fourth base side surface 76 extend along the x-direction.

[0429] The first substrate side surface 73 and the second substrate side surface 74 are the two end surfaces in the x direction of the individual antenna substrate 70E.

[0430] The first base side surface 73 is the first base side surface 73T near the antenna base 70 in the separate antenna base 70E (refer to...). Figure 37 The first base side surface 73 extends in a direction intersecting both the x and y directions when viewed from the z-direction. Specifically, when viewed from above, the first base side surface 73 is V-shaped. The first base side surface 73 has a portion of the first base side surface 73 that is biased towards the third base side surface 75, namely base side surface portion 73a, and a portion of the first base side surface 73 that is biased towards the fourth base side surface 76, namely base side surface portion 73b. Base side surface portion 73a is a surface that slopes towards the third base side surface 75 as it moves towards the second base side surface 74. Base side surface portion 73b is a surface that slopes towards the fourth base side surface 76 as it moves towards the second base side surface 74.

[0431] The second base side surface 74 forms part of the second base side surface 74T of the antenna base 70. Viewed from the z-direction, the second base side surface 74 extends along the y-direction.

[0432] The antenna surface 81E of the antenna recess 80E is recessed from the main surface 71 of the individual antenna substrate 70E toward the back surface 72 of the substrate. In this embodiment, when viewed in a cross-section of the individual antenna substrate 70E cut along planes in the x and z directions, the antenna surface 81E is curved in a convex manner toward the back surface 72 of the substrate. The antenna surface 81E opens in the main surface 71 of the substrate. That is, the antenna surface 81E opens upwards.

[0433] The opening of antenna surface 81E, when viewed from above, appears as a partially missing circular shape. Specifically, the opening of antenna surface 81E is missing at the following ends: the base side surface 73a (opening end 81Ea), the base side surface 73b (opening end 81Eb), and the fourth base side surface 76 (opening end 81Ec). These opening ends 81Ea to 81Ec are each formed as a straight line when viewed from above.

[0434] Viewed from above, the opening 81Ea of the antenna surface 81E is formed at a position overlapping with the side surface 73a of the base, the opening 81Eb is formed at a position overlapping with the side surface 73b of the base, and the opening 81Ec is formed at a position overlapping with the fourth side surface 76 of the base.

[0435] The reflective film 82E is formed on the antenna surface 81E. The reflective film 82E is formed throughout the entire antenna surface 81E. On the other hand, the reflective film 82E is not formed on the substrate main surface 71 of the separate antenna substrate 70E.

[0436] Viewed from above, the opening of the reflective film 82E has the same shape as the opening of the antenna surface 81E. That is, viewed from above, the opening of the reflective film 82E has: an opening end 82Ea located at a position overlapping with the opening end 81Ea of the antenna surface 81E; an opening end 82Eb located at a position overlapping with the opening end 81Eb of the antenna surface 81E; and an opening end 82Ec located at a position overlapping with the opening end 81Ec of the antenna surface 81E. Viewed from above, the opening ends 82Ea to 82Ec are each formed as a straight line.

[0437] Viewed from above, the reflective film 82E is formed such that its center point P2 is positioned differently from the center of the individual antenna substrate 70E in both the x and y directions. In this embodiment, viewed from above, the reflective film 82E is formed such that its center point P2 is offset towards the first substrate side surface 73 in the x direction from the center of the individual antenna substrate 70E in the x direction. Viewed from above, the reflective film 82E is formed such that its center point P2 is offset towards the fourth substrate side surface 76 in the y direction from the center of the individual antenna substrate 70E in the y direction.

[0438] Viewed from above, the center point P2 of the reflective film 82E coincides with the center point of the antenna surface 81E, and the shape of the reflective film 82E is approximately the same as that of the antenna surface 81E. Therefore, viewed from above, the antenna surface 81E and the reflective film 82E are formed in a manner where the center point of the antenna surface 81E is located at a different position from the center of the individual antenna substrate 70E in the x and y directions.

[0439] Viewed from above, the portions at both ends of the arrangement direction of the reflective films 82E and 82F in the arc-shaped outer periphery connecting the reflective film 82E, i.e., the first direction, are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the arc-shaped outer periphery connecting the reflective film 82E in the first direction (y direction in this embodiment) are formed into an arc shape with a central angle θe1 ​​of less than 180°.

[0440] Viewed from above, the portion of the two ends of the third direction of the arrangement direction of the reflective films 82E and 82A within the arc-shaped outer periphery connecting the reflective film 82E is formed into an arc shape with a central angle of less than 180°. Here, the third direction is a direction that is different from the x and y directions when viewed from the z direction. As an example, the third direction is a direction that intersects the x and y directions when viewed from the z direction. In this embodiment, the third direction is a direction that slopes from the base side surface 75T to the base side surface 76T as it moves from the base side surface 73T to the base side surface 74T of the antenna base 70.

[0441] In this embodiment, when viewed from above, the two ends of the third direction (in this embodiment, the direction orthogonal to the direction extending from the side surface portion 73a of the substrate when viewed from above) of the arc-shaped outer periphery connecting the reflective film 82E are formed into an arc shape with a central angle θe2 of less than 180°.

[0442] Viewed from above, the portions at both ends of the fourth direction, where the reflective films 82E and 82B are arranged in the arc-shaped outer periphery connecting the reflective film 82E, are formed into an arc shape with a central angle of less than 180°. Here, the fourth direction is a direction different from the x, y, and the aforementioned third direction when viewed from the z direction. As an example, the fourth direction is a direction that intersects the x, y, and third directions when viewed from the z direction. In this embodiment, the fourth direction is a direction that slopes from the base side surface 76T to the base side surface 75T as it moves from the base side surface 73T to the base side surface 74T of the antenna substrate 70.

[0443] In this embodiment, when viewed from above, the portions of the two ends of the fourth direction (in this embodiment, the direction orthogonal to the direction extending from the side portion 73b of the substrate when viewed from above) of the arc-shaped outer periphery connecting the reflective film 82E are formed into an arc shape with a central angle θe3 of less than 180°.

[0444] Since the reflective film 82E and the antenna surface 81E have approximately the same shape when viewed from above, similarly to the reflective film 82E, the portions at both ends of the first direction (the arrangement direction of antenna surfaces 81E and 81F) connecting the arc-shaped outer periphery of the antenna surface 81E are formed into arcs with a central angle of less than 180°. Similarly, the portions at both ends of the third direction (the direction orthogonal to the direction extending from the base side surface portion 73a when viewed from above) connecting the arc-shaped outer periphery of the antenna surface 81E are formed into arcs with a central angle of less than 180°. The portions at both ends of the fourth direction (the direction orthogonal to the direction extending from the base side surface portion 73b when viewed from above) connecting the arc-shaped outer periphery of the antenna surface 81E are formed into arcs with a central angle of less than 180°.

[0445] Viewed from above, the length LR1 of the perpendicular line from the opening end 82Ea of the reflective film 82E, passing through the center point P2 of the reflective film 82E, is smaller than the radius RE of the reflective film 82E. Viewed from above, the length LR2 of the perpendicular line from the opening end 82Eb of the reflective film 82E, passing through the center point P2 of the reflective film 82E, is smaller than the radius RE of the reflective film 82E. Viewed from above, the length LR3 of the perpendicular line from the opening end 82Ec of the reflective film 82E, passing through the center point P2 of the reflective film 82E, is smaller than the radius RE of the reflective film 82E. Furthermore, viewed from above, the perpendicular line from the opening end 82Ec of the reflective film 82E, passing through the center point P2 of the reflective film 82E, is a straight line extending along the y-direction. Additionally, length LR1 can be considered a length along a third direction, and length LR2 can be considered a length along a fourth direction. Therefore, the length (LR1+RE) of the reflective film 82E in the third direction is shorter than the diameter of the reflective film 82E, and the length (LR2+RE) of the reflective film 82E in the fourth direction is shorter than the diameter of the reflective film 82E. Furthermore, the length (LR3+RE) of the reflective film 82E in the first direction is shorter than the diameter of the reflective film 82E. In this way, it can be said that, viewed from above, the reflective films 82E to 82H are arranged (refer to...). Figure 37The size of the reflective film 82E in the first direction (i.e., the direction of the first direction) is smaller than the size of the reflective film 82E along the second direction, which is different from the first direction. Here, the second direction is the direction orthogonal to the first direction when viewed from above (the x-direction in this embodiment). Furthermore, it can be said that the size of the reflective film 82E in the third direction (i.e., the direction along which the reflective films 82E and 82A are arranged when viewed from above) is smaller than the size of the reflective film 82E along the second direction. Additionally, it can be said that the size of the reflective film 82E in the fourth direction (i.e., the direction along which the reflective films 82E and 82B are arranged when viewed from above) is smaller than the size of the reflective film 82E along the second direction.

[0446] Furthermore, since the reflective film 82E and the antenna surface 81E are roughly the same shape when viewed from above, the relationship between the length of the perpendicular line passing through the center point of the antenna surface 81E among the perpendicular lines of the opening ends 81Ea to 81Ec of the antenna surface 81E and the radius of the antenna surface 81E is the same as the relationship between the length LR1 to LR3 of the reflective film 82E and the radius RE of the reflective film 82E.

[0447] like Figure 41 As shown, when viewed in a cross-section of the individual antenna substrate 70E cut through a plane passing through the center point P2 of the reflective film 82E and along the y and z directions, the portion connecting the two ends of the reflective film 82E in the y direction is formed into an arc shape with a central angle of less than 180°. Additionally, although not shown, when viewed in a cross-section of the individual antenna substrate 70E cut through a plane passing through the center point P2 of the reflective film 82E and along the third and z directions, the portion connecting the two ends of the reflective film 82E in the third direction is formed into an arc shape with a central angle of less than 180°. Furthermore, although not shown, when viewed in a cross-section of the individual antenna substrate 70E cut through a plane passing through the center point P2 of the reflective film 82E and along the fourth and z directions, the portion connecting the two ends of the reflective film 82E in the fourth direction is formed into an arc shape with a central angle of less than 180°.

[0448] like Figure 41 As shown, when viewed by a cross-section of the individual antenna base 70E cut along the y and z directions from the center point of the antenna surface 81E, the portion connecting the two ends of the antenna surface 81E in the y direction is formed into an arc shape with a central angle of less than 180°. Additionally, although not shown, when viewed by a cross-section of the individual antenna base 70E cut along the third and z directions from the center point of the antenna surface 81E, the portion connecting the two ends of the antenna surface 81E in the third direction is formed into an arc shape with a central angle of less than 180°. Furthermore, although not shown, when viewed by a cross-section of the individual antenna base 70E cut along the fourth and z directions from the center point of the antenna surface 81E, the portion connecting the two ends of the antenna surface 81E in the fourth direction is formed into an arc shape with a central angle of less than 180°.

[0449] Viewed from above, the individual antenna substrate 70E has a peripheral wall portion 78E, which surrounds the opening of the antenna recess 80E, except for a portion of the missing part of the opening. The peripheral wall portion 78E constitutes the substrate main surface 71 of the individual antenna substrate 70E.

[0450] like Figure 39 As shown, the individual antenna substrate 70A, like the individual antenna substrate 70E, has a main surface 71 and a back surface 72 as surfaces intersecting the z-direction. The shapes of the main surface 71 and the back surface 72, viewed from the z-direction, are approximately quadrilateral shapes, with one side of each side intersecting both the x and y directions. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, identical in shape. However, this is not a limitation; the main surface 71 and the back surface 72 may also have different shapes.

[0451] The individual antenna substrate 70A has four base side surfaces: a first base side surface 73, a second base side surface 74, a third base side surface 75, and a fourth base side surface 76. These base side surfaces 73 to 76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each base side surface 73 to 76 is a surface orthogonal to the relative direction of the base main surface 71 and the base back surface 72, connecting the base main surface 71 and the base back surface 72.

[0452] The third base side surface 75 and the fourth base side surface 76 constitute the two end faces in the y-direction of the individual antenna base 70A. The third base side surface 75 forms part of the third base side surface 75T in the antenna base 70. The third base side surface 75 and the fourth base side surface 76 extend along the x-direction when viewed from above. When viewed from the z-direction, the x-direction length of the fourth base side surface 76 is shorter than the x-direction length of the third base side surface 75.

[0453] The first substrate side surface 73 and the second substrate side surface 74 constitute the two end surfaces in the x direction of the individual antenna substrate 70A.

[0454] The first base side surface 73 forms part of the first base side surface 73T in the antenna base 70. Viewed from above, the first base side surface 73 extends along the y-direction.

[0455] The second base side surface 74 is the side surface of the second base side surface 74T of the individual antenna base 70A, which is close to the antenna base 70. Viewed from above, it extends in a direction intersecting both the x and y directions. Specifically, the second base side surface 74 has a portion biased towards the third base side surface 75, namely base side surface portion 74a, and a portion biased towards the fourth base side surface 76, namely base side surface portion 74b. Viewed from the z direction, base side surface portion 74a extends along the y direction. Viewed from the z direction, base side surface portion 74b is an inclined surface that slopes towards the first base side surface 73 as it moves towards the fourth base side surface 76.

[0456] The antenna surface 81A of the antenna recess 80A is recessed from the main surface 71 of the individual antenna substrate 70A toward the back surface 72 of the substrate. In this embodiment, when viewed in a cross-section of the individual antenna substrate 70A cut along planes in the x and z directions, the antenna surface 81A is curved in a manner that is convex toward the back surface 72 of the substrate. The antenna surface 81A opens in the main surface 71 of the substrate. That is, the antenna surface 81A opens upwards.

[0457] The opening of antenna surface 81A, viewed from above, is a partially missing circular shape. Specifically, the opening ends 81Aa on the second base side surface 74 and 81Ab on the fourth base side surface 76 are missing from the opening of antenna surface 81A. That is, these opening ends 81Aa and 81Ab are respectively formed as straight lines when viewed from above. Viewed from above, opening end 81Aa is formed at a position overlapping with the base side surface 74b, and opening end 81Ab is formed at a position overlapping with the fourth base side surface 76.

[0458] Viewed from above, the reflective film 82A is formed such that its center point P2 is located at a different position from the center of the individual antenna substrate 70A in both the x and y directions. In this embodiment, the reflective film 82A is formed such that its center point P2 is located further away from the center of the individual antenna substrate 70A in the x direction than the center of the individual antenna substrate 70A in the x direction. Viewed from above, the reflective film 82A is formed such that its center point P2 is located further away from the fourth substrate side surface 76 in the y direction than the center of the individual antenna substrate 70A in the y direction.

[0459] Since, when viewed from above, the center point P2 of the reflective film 82A coincides with the center point of the antenna surface 81A, and the shape of the reflective film 82A is approximately the same as the shape of the antenna surface 81A, when viewed from above, the antenna surface 81A and the reflective film 82A are formed in such a way that the center point of the antenna surface 81A is at a different position from the center of the individual antenna substrate 70A in the x and y directions.

[0460] Viewed from above, the portions at both ends of the arrangement direction of the reflective films 82A and 82B in the arc-shaped outer periphery connecting the reflective film 82A, i.e., the first direction, are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the first direction (y direction in this embodiment) of the arc-shaped outer periphery connecting the reflective film 82A are formed into an arc shape with a central angle θa1 of less than 180°.

[0461] Viewed from above, the portions at both ends of the third direction (the direction perpendicular to the direction extending from the base side surface 74b) of the arc-shaped outer periphery connecting the reflective film 82A are formed in an arc shape with a central angle of less than 180°. In this embodiment, the portions at both ends of the third direction (the direction orthogonal to the direction extending from the base side surface 74b) of the arc-shaped outer periphery connecting the reflective film 82A are formed in an arc shape with a central angle θa2 of less than 180°.

[0462] Since the reflective film 82A and the antenna surface 81A have approximately the same shape when viewed from above, similarly to the reflective film 82A, the portion of the two ends of the arrangement direction of antenna surfaces 81A and 81B in the arc-shaped outer periphery connecting antenna surfaces 81A, i.e., the first direction, is formed into an arc shape with a central angle of less than 180°. Similarly, the portion of the two ends of the arrangement direction of antenna surfaces 81A and 81E in the arc-shaped outer periphery connecting antenna surfaces 81A, i.e., the third direction, is formed into an arc shape with a central angle of less than 180°.

[0463] Viewed from above, the length LR4 of the perpendicular line from the opening end 82Aa of the reflective film 82A, passing through the center point P2 of the reflective film 82A, is smaller than the radius RA of the reflective film 82A. Viewed from above, the length LR5 of the perpendicular line from the opening end 82Ab of the reflective film 82A, passing through the center point P2 of the reflective film 82A, is smaller than the radius RA of the reflective film 82A. Here, in this embodiment, the radius RA of the reflective film 82A is equal to the radius RE of the reflective film 82E. Furthermore, the perpendicular line from the opening end 82Ab of the reflective film 82A, passing through the center point P2 of the reflective film 82A, is a straight line extending along the y-direction. Additionally, the length LR4 can be considered as the length along the third direction. Therefore, the length (LR3+RA) of the reflective film 82A in the third direction is shorter than the diameter of the reflective film 82A. Furthermore, the length (LR5+RA) of the reflective film 82A in the first direction is shorter than the diameter of the reflective film 82A. As shown, it can be said that the reflective films are arranged along lines 82A to 82D when viewed from above (see reference). Figure 37The size of the reflective film 82A in the first direction (i.e., the direction in which the reflective films 82E and 82A are arranged) is smaller than the size of the reflective film 82A along the second direction, which is different from the first direction. Here, the second direction is the direction orthogonal to the first direction when viewed from above (the x-direction in this embodiment). In addition, it can be said that, when viewed from above, the size of the reflective film 82A in the third direction (i.e., the direction in which the reflective films 82E and 82A are arranged) is smaller than the size of the reflective film 82A along the second direction.

[0464] Furthermore, since the reflective film 82A and the antenna surface 81A have approximately the same shape when viewed from above, the relationship between the length of the perpendicular line passing through the center point of the antenna surface 81A among the perpendicular lines of the opening ends 81Aa and 81Ab of the antenna surface 81A and the radius of the antenna surface 81A is the same as the relationship between the length LR4 and LR5 of the reflective film 82A and the radius RA of the reflective film 82A.

[0465] Although not shown in the diagram, when viewed in a cross-section of the individual antenna substrate 70A cut along the y and z directions using a plane passing through the center point P2 of the reflective film 82A, the portion connecting the two ends of the reflective film 82A in the y direction is formed into an arc shape with a central angle of less than 180°. Furthermore, when viewed in a cross-section of the individual antenna substrate 70A cut along the third and z directions using a plane passing through the center point P2 of the reflective film 82A, the portion connecting the two ends of the reflective film 82A in the third direction is formed into an arc shape with a central angle of less than 180°.

[0466] Although not shown in the diagram, when viewed in a cross-section of the individual antenna base 70A cut along the y and z directions using a plane passing through the center point of the antenna surface 81A, the portion connecting the two ends of the antenna surface 81A in the y direction is formed into an arc shape with a central angle of less than 180°. Furthermore, when viewed in a cross-section of the individual antenna base 70A cut along the third and z directions using a plane passing through the center point of the antenna surface 81A, the portion connecting the two ends of the antenna surface 81A in the third direction is formed into an arc shape with a central angle of less than 180°.

[0467] Individual antenna substrates 70B, 70C, 70D, 70F, 70G, and 70H are all identical in shape. Therefore, as an example, regarding... Figure 40 The structure of the individual antenna substrate 70B shown will be described, while the description of the structures of individual antenna substrates 70C, 70D, 70F to 70H will be omitted.

[0468] like Figure 40As shown, the individual antenna substrate 70B, like the individual antenna substrate 70A, has a main surface 71 and a back surface 72 as surfaces intersecting the z-direction. The main surface 71 and the back surface 72, viewed from the z-direction, are both pentagonal in shape. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, identical in shape. However, this is not a limitation, and the main surface 71 and the back surface 72 may also have different shapes.

[0469] The individual antenna substrate 70B has a first substrate side surface 73, a second substrate side surface 74, a third substrate side surface 75, and a fourth substrate side surface 76 as substrate sides. These substrate side surfaces 73 to 76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each substrate side surface 73 to 76 is a surface orthogonal to the relative direction of the substrate main surface 71 and the substrate back surface 72, connecting the substrate main surface 71 and the substrate back surface 72.

[0470] The third base side surface 75 and the fourth base side surface 76 are the two end surfaces in the y-direction of the individual antenna base 70B. Viewed from the z-direction, the third base side surface 75 and the fourth base side surface 76 extend along the x-direction.

[0471] The first substrate side surface 73 and the second substrate side surface 74 are the two end surfaces in the x direction of the individual antenna substrate 70B.

[0472] Viewed from above, the first base side 73 extends along the y-direction.

[0473] Viewed from above, the second base side surface 74 extends along directions intersecting the x and y directions. Specifically, viewed from above, the second base side surface 74 is V-shaped. The second base side surface 74 has a portion biased towards the third base side surface 75, namely base side surface portion 74a, and a portion biased towards the fourth base side surface 76, namely base side surface portion 74b. Base side surface portion 74a is a surface that slopes towards the third base side surface 75 as it moves towards the first base side surface 73. Base side surface portion 74b is a surface that slopes towards the fourth base side surface 76 as it moves towards the first base side surface 73.

[0474] The antenna surface 81B of the antenna recess 80B is recessed from the main surface 71 of the individual antenna substrate 70B toward the back surface 72 of the substrate. In this embodiment, when viewed in a cross-section of the individual antenna substrate 70B cut along planes in the x and z directions, the antenna surface 81B is curved in a convex manner toward the back surface 72 of the substrate. The antenna surface 81B opens in the main surface 71 of the substrate. That is, the antenna surface 81B opens upwards.

[0475] The opening of antenna surface 81B, when viewed from above, is a partially missing circular shape. Specifically, the opening ends 81Ba on the base side 74a, 81Bb on the base side 74b, 81Bc on the third base side 75, and 81Bd on the fourth base side 76 of the opening of antenna surface 81B are missing. These opening ends 81Ba to 81Bd are each formed as a straight line when viewed from above.

[0476] Viewed from above, the opening end 81Ba is formed at a position overlapping with the side surface portion 74a of the base, the opening end 81Bb is formed at a position overlapping with the side surface portion 74b of the base, the opening end 81Bc is formed at a position overlapping with the third side surface portion 75 of the base, and the opening end 81Bd is formed at a position overlapping with the fourth side surface portion 76 of the base.

[0477] Viewed from above, the opening of the reflective film 82B has the same shape as the opening of the antenna surface 81B. Specifically, viewed from above, the opening of the reflective film 82B has: an opening end 82Ba overlapping with the opening end 81Ba of the antenna surface 81B; an opening end 82Bb overlapping with the opening end 81Bb of the antenna surface 81B; an opening end 82Bc overlapping with the opening end 81Bc of the antenna surface 81B; and an opening end 82Bd overlapping with the opening end 81Bd of the antenna surface 81B. Viewed from above, the opening ends 82Ba to 82Bd are each formed in a straight line.

[0478] Viewed from above, the reflective film 82B is formed such that its center point P2 is positioned differently from the center of the individual antenna substrate 70B in both the x and y directions. Viewed from above, the reflective film 82B is formed such that its center point P2 is positioned closer to the side surface 73 of the first substrate in the x direction than the center of the individual antenna substrate 70B in the x direction. Viewed from above, the reflective film 82B is formed such that its center point P2 is the center of the individual antenna substrate 70B in the y direction.

[0479] Since, when viewed from above, the center point P2 of the reflective film 82B coincides with the center point of the antenna surface 81B, and the shape of the reflective film 82B is approximately the same as the shape of the antenna surface 81B, when viewed from above, the antenna surface 81B and the reflective film 82B are similarly formed in that the center point of the antenna surface 81B is located at a different position from the center of the individual antenna substrate 70B in the x and y directions.

[0480] Viewed from above, the portions at both ends of the arc-shaped outer periphery connecting the reflective film 82B and the reflective film 82A in the first direction (i.e., the direction of arrangement) are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the arc-shaped outer periphery connecting the reflective film 82B in the first direction (y direction in this embodiment) are formed into an arc shape with a central angle θb1 of less than 180°.

[0481] Viewed from above, the portions at both ends of the fourth direction (the direction in which the reflective films 82B and 82E are arranged) of the arc-shaped outer periphery connecting the reflective film 82B are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the fourth direction (in this embodiment, the direction orthogonal to the direction extending from the side surface portion 74a of the substrate when viewed from above) of the arc-shaped outer periphery connecting the reflective film 82B are formed into an arc shape with a central angle θb2 of less than 180°.

[0482] Viewed from above, the portions at both ends of the third direction (the direction perpendicular to the extension direction of the substrate side surface portion 74b) of the arc-shaped outer periphery connecting the reflective film 82B are formed in an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the third direction (the direction orthogonal to the extension direction of the substrate side surface portion 74b when viewed from above) of the arc-shaped outer periphery connecting the reflective film 82B are formed in an arc shape with a central angle θb3 of less than 180°.

[0483] Furthermore, since the reflective film 82B and the antenna surface 81B have approximately the same shape when viewed from above, the portion of the arc-shaped outer periphery connecting the antenna surface 81B, specifically the portion of the two ends of the first direction (the alignment direction of antenna surface 81B and antenna surface 81A), is formed into an arc shape with a central angle less than 180°. Similarly, the portion of the arc-shaped outer periphery connecting the antenna surface 81B, specifically the portion of the fourth direction (the alignment direction of antenna surface 81B and antenna surface 81E), is formed into an arc shape with a central angle less than 180°. Finally, the portion of the arc-shaped outer periphery connecting the antenna surface 81B, specifically the portion of the third direction (the alignment direction of antenna surface 81B and antenna surface 81F), is formed into an arc shape with a central angle less than 180°.

[0484] Viewed from above, the length LR6 of the perpendicular line from the opening end 82Ba of the reflective film 82B, passing through the center point P2 of the reflective film 82B, is smaller than the radius RB of the reflective film 82B. Viewed from above, the length LR7 of the perpendicular line from the opening end 82Bb of the reflective film 82B, passing through the center point P2 of the reflective film 82B, is smaller than the radius RB of the reflective film 82B. Viewed from above, the length LR8 of the perpendicular line from the opening end 82Bc of the reflective film 82B, passing through the center point P2 of the reflective film 82B, is smaller than the radius RB of the reflective film 82B. Viewed from above, the length LR9 of the perpendicular line from the opening end 82Bd of the reflective film 82B, passing through the center point P2 of the reflective film 82B, is smaller than the radius RB of the reflective film 82B. Here, in this embodiment, the radius RB of the reflective film 82B is equal to the radius RA of the reflective film 82A. Furthermore, the perpendicular lines passing through the center point P2 of the reflective film 82B relative to the opening end 82Bc of the reflective film 82B, and the perpendicular lines passing through the center point P2 of the reflective film 82B relative to the opening end 82Bd of the reflective film 82B, are straight lines extending along the y-direction. The sum of the lengths LR8 and LR9 of these perpendicular lines (LR8+LR9) is equal to the length of the individual antenna substrate 70B in the y-direction. Therefore, the length of the individual antenna substrate 70B in the y-direction is smaller than the diameter of the reflective film 82B. Additionally, it can be said that the length LR7 is along a third direction, and the length LR6 is along a fourth direction. Therefore, the length of the reflective film 82B in the third direction (LR7+RB) is shorter than the diameter of the reflective film 82B, and the length of the reflective film 82B in the fourth direction (LR6+RB) is shorter than the diameter of the reflective film 82B. In this way, it can also be said that, viewed from above, along the reflective films 82A to 82D (refer to...) Figure 37 The size of the reflective film 82B along the first direction (where the reflective films 82B are arranged) is smaller than the size of the reflective film 82B along the second direction (which is different from the first direction). Here, the second direction is the direction orthogonal to the first direction when viewed from above (in this embodiment, the x-direction). Furthermore, it can be said that the size of the reflective film 82B along the third direction (where the reflective films 82B and 82F are arranged) when viewed from above is smaller than the size of the reflective film 82B along the second direction. Additionally, it can be said that the size of the reflective film 82B along the fourth direction (where the reflective films 82E and 82B are arranged) when viewed from above is smaller than the size of the reflective film 82B along the second direction.

[0485] Furthermore, since the reflective film 82B and the antenna surface 81B have approximately the same shape when viewed from above, the relationship between the length of the perpendicular line passing through the center point of the antenna surface 81B among the perpendicular lines from the opening ends 81Ba to 81Bd of the antenna surface 81B and the radius of the antenna surface 81B is the same as the relationship between the length LR6 to LR9 of the reflective film 82B and the radius RB of the reflective film 82B.

[0486] Although not illustrated, when viewed in a cross-section of the individual antenna substrate 70B cut along the y and z directions using a plane passing through the center point P2 of the reflective film 82B, the portion connecting the two ends of the reflective film 82B in the y direction is formed into an arc shape with a central angle of less than 180°. Similarly, when viewed in a cross-section of the individual antenna substrate 70B cut along the third and z directions using a plane passing through the center point P2 of the reflective film 82B, the portion connecting the two ends of the reflective film 82B in the third direction is formed into an arc shape with a central angle of less than 180°. Furthermore, when viewed in a cross-section of the individual antenna substrate 70B cut along the third and z directions using a plane passing through the center point P2 of the reflective film 82B, the portion connecting the two ends of the reflective film 82B in the fourth direction is formed into an arc shape with a central angle of less than 180°.

[0487] Although not illustrated, when viewed in a cross-section of the individual antenna base 70B cut along the y and z directions from the center point of the antenna surface 81B, the portion connecting the two ends of the antenna surface 81B in the y direction is formed into an arc shape with a central angle of less than 180°. Similarly, when viewed in a cross-section of the individual antenna base 70B cut along the third and z directions from the center point of the antenna surface 81B, the portion connecting the two ends of the antenna surface 81B in the third direction is formed into an arc shape with a central angle of less than 180°. Furthermore, when viewed in a cross-section of the individual antenna base 70B cut along the third and z directions from the center point of the antenna surface 81B, the portion connecting the two ends of the antenna surface 81B in the fourth direction is formed into an arc shape with a central angle of less than 180°.

[0488] Viewed from above, the individual antenna substrate 70B has a peripheral wall portion 78B, which surrounds the opening of the antenna recess 80B, except for a portion of the opening that is missing. The peripheral wall portion 78B constitutes the substrate main surface 71 of the individual antenna substrate 70B.

[0489] Furthermore, the antenna surface 81C of the antenna recess 80C of the individual antenna substrate 70C, the antenna surface 81D of the antenna recess 80D of the individual antenna substrate 70D, the antenna surface 81F of the antenna recess 80F of the individual antenna substrate 70F, the antenna surface 81G of the antenna recess 80G of the individual antenna substrate 70G, and the antenna surface 81H of the antenna recess 80H of the individual antenna substrate 70H all have the same shape as the antenna surface 81B of the antenna recess 80B. Additionally, the reflective films 82C, 82D, 82F, 82G, and 82H all have the same shape as the reflective film 82B.

[0490] like Figure 37As shown, the base side surface 74b of individual antenna substrate 70A contacts the base side surface 73a of individual antenna substrate 70E. That is, individual antenna substrates 70A and 70E are arranged in the third-order direction. Similarly, the base side surface 74b of individual antenna substrate 70B contacts the base side surface 74b of individual antenna substrate 70F, the base side surface 74b of individual antenna substrate 70C contacts the base side surface 74b of individual antenna substrate 70G, and the base side surface 74b of individual antenna substrate 70D contacts the base side surface 74b of individual antenna substrate 70H. That is, individual antenna substrates 70B and 70F are arranged in the third-order direction, individual antenna substrates 70C and 70G are arranged in the third-order direction, and individual antenna substrates 70D and 70H are arranged in the third-order direction.

[0491] The base side surface 74a of the individual antenna substrate 70B contacts the base side surface 73b of the individual antenna substrate 70E. That is, the individual antenna substrates 70B and 70E are arranged in the fourth direction. Similarly, the base side surface 74a of the individual antenna substrate 70C contacts the base side surface 74a of the individual antenna substrate 70F, and the base side surface 74a of the individual antenna substrate 70D contacts the base side surface 74a of the individual antenna substrate 70G. That is, the individual antenna substrates 70C and 70F are arranged in the fourth direction, and the individual antenna substrates 70D and 70G are arranged in the fourth direction.

[0492] Next, the gas space 92 will be explained.

[0493] like Figures 41-43 As shown, the gas space 92, similar to that in the first embodiment, is divided by the dielectric main surface 51 and the antenna surface 81. Specifically, the opening of the antenna recess 80 is covered by the dielectric main surface 51. Specifically, the openings of the antenna recesses 80A to 80H are respectively covered by the dielectric main surface 51. In this embodiment, the gas space 92 communicates with the outside of the device in the antenna recesses 80D and 80H of the individual antenna substrates 70D and 70H. That is, the gas space 92 in this embodiment is not sealed. Furthermore, the gas space 92 can also be sealed by changing the structure of the individual antenna substrate 70H to the structure of the individual antenna substrate 70A, and changing the structure of the individual antenna substrate 70D to the structure of the individual antenna substrate 70E.

[0494] A gas space 92 is defined by the dielectric main surface 51 and the antenna surface 81, which serves as the inner surface of the antenna recess 80. More specifically, the gas space 92 is defined by the dielectric main surface 51 and the antenna surfaces 81A to 81H. Reflective films 82A to 82H are respectively disposed within the gas spaces 92. The gas space 92 includes a plurality of gas spaces 92 defined by each of the antenna recesses 80A to 80H and the dielectric main surface 51. In this embodiment, the gas spaces corresponding to adjacent individual antenna substrates 70A to 70H are interconnected. As an example, Figure 41 and Figure 42 As shown, the gas space 92E, divided by the dielectric main surface 51 and the antenna surface 81E, the gas space 92F, divided by the dielectric main surface 51 and the antenna surface 81F, and the gas space 92G, divided by the dielectric main surface 51 and the antenna surface 81G, are interconnected in the first direction (y direction in this embodiment) of the arrangement direction of the reflective films 82F and 82G. Figure 42 As shown, gas space 92E is connected to gas space 92B, which is divided by dielectric main surface 51 and antenna surface 81B. That is, gas space 92B and gas space 92E are interconnected in the fourth direction, i.e., the arrangement direction of reflective film 82B and reflective film 82E. Figure 43 As shown, the gas space 92G is connected to the gas space 92C divided by the dielectric main surface 51 and the antenna surface 81C. That is, the gas space 92C and the gas space 92G are interconnected in the third direction of the arrangement of the reflective film 82C and the reflective film 82G. Since there is gas in the gas space 92, the relationship between the refractive indices of the dielectric body 50, the gas space 92, and the terahertz element 20, as well as the propagation path of the electromagnetic wave, are the same as in the first embodiment. In this way, the gas spaces 92 corresponding to the individual antenna substrates 70A to 70H are such that the gas spaces 92 of the individual antenna substrates arranged in the first direction (the y direction in this embodiment) are connected in the first direction, the gas spaces 92 of the individual antenna substrates arranged in the third direction are connected in the third direction, and the gas spaces 92 of the individual antenna substrates arranged in the fourth direction are connected in the fourth direction.

[0495] like Figure 44As shown, the terahertz device 10, like the first embodiment, has a first electrode 101 and a second electrode 102, as well as a first conductive portion 110 and a second conductive portion 120. In this embodiment, the two electrodes 101 and 102 are individually provided corresponding to the terahertz elements 20A to 20H. The structures of the two electrodes 101 and 102 and the two conductive portions 110 and 120 are the same as in the first embodiment. The two conductive portions 110 and 120 are sealed by the dielectric body 50 in the same manner as in the first embodiment. For convenience, the first electrode 101 and the second electrode 102 corresponding to the terahertz elements 20A to 20H are respectively designated as the first electrode 101A to 101H and the second electrode 102A to 102H, and the first conductive portions 110 and the second conductive portions 120 corresponding to the terahertz elements 20A to 20H are designated as the first conductive portions 110A to 110H and the second conductive portions 120A to 120H.

[0496] The first conductive portion 110A and the second conductive portion 120A connected to the terahertz element 20A, the first conductive portion 110B and the second conductive portion 120B connected to the terahertz element 20B, the first conductive portion 110C and the second conductive portion 120C connected to the terahertz element 20C, and the first conductive portion 110D and the second conductive portion 120D connected to the terahertz element 20D, respectively extend toward the first protrusion 61 in the x-direction. Therefore, the first electrode 101A and the second electrode 102A connected to the first conductive portion 110A and the second conductive portion 120A, the first electrode 101B and the second electrode 102B connected to the first conductive portion 110B and the second conductive portion 120B, the first electrode 101C and the second electrode 102C connected to the first conductive portion 110C and the second conductive portion 120C, and the first electrode 101D and the second electrode 102D connected to the first conductive portion 110D and the second conductive portion 120D are respectively provided in the first protrusion 61. That is, the two conductive portions 110A-110D and 120A-120D connected to the terahertz elements 20A-20D, which are arranged corresponding to the individual antenna substrates 70A-70D located near the first protrusion 61 in the antenna substrate 70, extend toward the first protrusion 61, which is closer to the individual antenna substrates 70A-70D than the second protrusion 62. The two electrodes 101A-101D and 102A-102D are provided in the first protrusion 61, which is closer to the individual antenna substrates 70A-70D than the second protrusion 62.

[0497] Two electrodes 101A-101D and 102A-102D are arranged alternately in the y direction while being aligned in the x direction. Two conductive parts 110A-110D and 120A-120D are arranged alternately in the y direction while being aligned in the x direction.

[0498] The first conductive portion 110E and the second conductive portion 120E connected to the terahertz element 20E, the first conductive portion 110F and the second conductive portion 120F connected to the terahertz element 20F, the first conductive portion 110G and the second conductive portion 120G connected to the terahertz element 20G, and the first conductive portion 110H and the second conductive portion 120H connected to the terahertz element 20H, respectively extend toward the second protrusion 62 in the x-direction. Therefore, the first electrode 101E and the second electrode 102E connected to the first conductive portion 110E and the second conductive portion 120E, the first electrode 101F and the second electrode 102F connected to the first conductive portion 110F and the second conductive portion 120F, the first electrode 101G and the second electrode 102G connected to the first conductive portion 110G and the second conductive portion 120G, and the first electrode 101H and the second electrode 102H connected to the first conductive portion 110H and the second conductive portion 120H, respectively, are provided on the second protrusion 62. That is, the two conductive portions 110E-110H and 120E-120H connected to each terahertz element 20E-20H, which is arranged corresponding to the individual antenna bases 70E-70H located near the second protrusion 62 in the antenna base 70, extend toward the second protrusion 62, which is closer to the individual antenna bases 70E-70H than the first protrusion 61. The two electrodes 101E-101H and 102E-102H are provided in the second protrusion 62, which is closer to the individual antenna bases 70E-70H than the first protrusion 61.

[0499] The two electrodes 101E-101H and 102E-102H are arranged alternately in the y direction while being aligned in the x direction. The two conductive parts 110E-110H and 120E-120H are arranged alternately in the y direction while being aligned in the x direction.

[0500] In this embodiment, reflective films 82A to 82H are in an electrically floating state. More specifically, reflective film 82A is electrically insulated from the two electrodes 101A and 102A and the two conductive parts 110A and 120A. Reflective film 82B is electrically insulated from the two electrodes 101B and 102B and the two conductive parts 110B and 120B. Reflective film 82C is electrically insulated from the two electrodes 101C and 102C and the two conductive parts 110C and 120C. Reflective film 82D is electrically insulated from the two electrodes 101D and 102D and the two conductive parts 110D and 120D. Reflective film 82E is electrically insulated from the two electrodes 101E and 102E and the two conductive parts 110E and 120E. Reflective film 82F is electrically insulated from the two electrodes 101F and 102F and the two conductive parts 110F and 120F. The reflective film 82G is electrically insulated from the two electrodes 101G and 102G and the two conductive parts 110G and 120G. The reflective film 82H is electrically insulated from the two electrodes 101H and 102H and the two conductive parts 110H and 120H.

[0501] (effect)

[0502] Reference Figure 45 The function of the terahertz device 10 in this embodiment will be explained.

[0503] Figure 45 It is an enlarged view of the individual antenna substrates 70B, 70C, 70E to 70G and their surroundings.

[0504] like Figure 45 As shown, in the first direction (the y-direction in this embodiment) of the arrangement direction of reflective films 82E and 82F, the distance between the receiving point P1 of terahertz element 20E and the receiving point P1 of terahertz element 20F, i.e., the inter-element distance Lef, is smaller than the diameter of reflective film 82E (radius RE×2 of reflective film 82E). Furthermore, the inter-element distance Lef is smaller than the diameter of reflective film 82F (radius RF×2 of reflective film 82F).

[0505] In the fourth direction, where the reflective films 82E and 82B are arranged, the distance between the receiving points P1 of the terahertz element 20E and 20B, i.e., the inter-element distance Lbe, is smaller than the diameter of the reflective film 82E. Furthermore, the inter-element distance Lbe is smaller than the diameter of the reflective film 82B (radius RB×2 of the reflective film 82B).

[0506] In the alignment direction of reflective films 82B and 82F (i.e., third-direction upward), the distance between the receiving point P1 of terahertz element 20B and the receiving point P1 of terahertz element 20F, i.e., the inter-element distance Lbf, is smaller than the diameter of reflective film 82B. Furthermore, the inter-element distance Lbf is smaller than the diameter of reflective film 82F.

[0507] In the first direction, which is the arrangement direction of reflective films 82B and 82C, the distance between the receiving point P1 of terahertz element 20B and the receiving point P1 of terahertz element 20C, i.e., the inter-element distance Lbc, is smaller than the diameter of reflective film 82B. Furthermore, the inter-element distance Lbc is smaller than the diameter of reflective film 82C (radius RC×2 of reflective film 82C).

[0508] In the fourth direction, where the reflective films 82C and 82F are arranged, the distance between the receiving point P1 of the terahertz element 20C and the receiving point P1 of the terahertz element 20F, i.e., the inter-element distance Lcf, is smaller than the diameter of the reflective film 82C. Furthermore, the inter-element distance Lcf is smaller than the diameter of the reflective film 82F.

[0509] In the first direction, which is the arrangement direction of reflective films 82F and 82G, the distance between the receiving point P1 of terahertz element 20F and the receiving point P1 of terahertz element 20G, i.e., the inter-element distance Lfg, is smaller than the diameter of reflective film 82F. Furthermore, the inter-element distance Lfg is smaller than the diameter of reflective film 82G (radius RG×2 of reflective film 82G).

[0510] In the alignment direction of reflective films 82C and 82G (i.e., third-direction upward), the distance between the receiving point P1 of terahertz element 20C and the receiving point P1 of terahertz element 20G, i.e., the inter-element distance Lcg, is smaller than the diameter of reflective film 82C. Furthermore, the inter-element distance Lcg is smaller than the diameter of reflective film 82G.

[0511] Furthermore, although not illustrated, the inter-element distances of terahertz elements 20A, 20B, and 20C, terahertz elements 20C, 20D, and 20G, and terahertz elements 20D, 20G, and 20H are the same as the inter-element distances of terahertz elements 20B, 20C, and 20E to 20G mentioned above.

[0512] In this way, in the arrangement direction of the plurality of reflective films 82, the distance between the receiving points P1 of adjacent terahertz elements 20, i.e., the distance between elements, is smaller than the diameter of the reflective film 82. Therefore, in the above-mentioned arrangement direction, adjacent terahertz elements 20 can be brought close to each other.

[0513] (Effect)

[0514] In addition to the effects of the first embodiment, the terahertz device 10 according to this embodiment also has the following effects.

[0515] (2-1) Viewed from the z-direction, the rows of terahertz elements 20A to 20D arranged in the y-direction and the rows of terahertz elements 20E to 20H arranged in the y-direction are arranged at intervals in the x-direction. According to this structure, the detection range of the terahertz device 10 in the x-direction can be expanded.

[0516] (2-2) Viewed from the z-direction, the rows of terahertz elements 20A to 20D are staggered from the rows of terahertz elements 20E to 20H in the y-direction. That is, in the y-direction, from the third substrate side 75T to the fourth substrate side 76T of the antenna substrate 70, terahertz elements 20A, 20E, 20B, 20F, 20C, 20G, 20D, and 20H are arranged sequentially.

[0517] Based on this structure, in the fourth direction—the arrangement directions of reflective films 82E and 82B, 82F and 82C, and 82G and 82D—terahertz elements 20E and 20B can be brought closer to each other, terahertz elements 20F and 20C can be brought closer to each other, and terahertz elements 20G and 20D can be brought closer to each other.

[0518] Furthermore, by aligning the reflective films 82A and 82E, 82B and 82F, 82C and 82G, and 82D and 82H (i.e., in the third direction), terahertz elements 20A and 20E can be brought closer together, terahertz elements 20B and 20F can be brought closer together, terahertz elements 20C and 20G can be brought closer together, and terahertz elements 20D and 20H can be brought closer together. Therefore, the resolution within the detection range of the terahertz device 10 can be improved.

[0519] (2-3) Viewed from the z-direction, the dimensions of the reflective film 82B along the fourth direction (the arrangement direction of reflective films 82E and 82B) and the dimensions of the reflective film 82B along the third direction (the arrangement direction of reflective films 82F and 82B) are both smaller than the dimensions of the reflective film 82B along the second direction (the x-direction in this embodiment). The same applies to the other reflective films 82A, 82C, 82D, and 82F to 82G.

[0520] Based on this structure, adjacent terahertz elements 20 can be brought closer to each other in the third and fourth directions. Therefore, the resolution within the detection range of the terahertz device 10 can be improved.

[0521] (2-4) Viewed from above, the two ends of the arc-shaped outer periphery of the reflective film 82B, which connect the reflective film 82E and the reflective film 82B in the fourth direction, and the two ends of the reflective film 82F and the reflective film 82B in the third direction, are respectively formed into arcs with a central angle of less than 180°.

[0522] Based on this structure, the reflective film 82B can maintain a spherical shape formed with a certain curvature, and can be formed such that the lengths LR6 and LR7 of the reflective film 82B are each shorter than the radius RB of the reflective film 82B.

[0523] Furthermore, similar to reflective film 82B, reflective films 82A, 82C-82H each have a central angle of less than 180° formed at both ends of the third direction and at both ends of the fourth direction. Based on this structure, reflective films 82A, 82C-82H can each maintain a spherical shape with a certain curvature, and can be formed such that the lengths of each of the reflective films 82A, 82C-82H in the third and fourth directions are shorter than the radii of the reflective films 82A, 82C-82H.

[0524] (2-5) Viewed from above, the boundaries of reflective films 82A and 82E, 82B and 82E, 82B and 82F, 82C and 82F, 82C and 82G, 82D and 82G, and 82D and 82H are all straight lines.

[0525] Based on this structure, reflective films 82A to 82H can each maintain a spherical shape with a certain curvature, and can each be formed such that the length of the third direction and the length of the fourth direction of each reflective film 82A to 82H are shorter than the radius of the reflective film 82A to 82H.

[0526] (2-6) The gas space 92B, defined by antenna surface 81B and dielectric body 50, and the gas space 92E, defined by antenna surface 81E and dielectric body 50, are connected in the third direction at the boundary between reflective film 82B (antenna surface 81B) and reflective film 82E (antenna surface 81E). The gas space 92C, defined by antenna surface 81C and dielectric body 50, and the gas space 92F, defined by antenna surface 81F and dielectric body 50, are connected in the third direction at the boundary between reflective film 82C (antenna surface 81C) and reflective film 82F (antenna surface 81F). The gas space defined by antenna surface 81D and dielectric body 50, and the gas space defined by antenna surface 81G and dielectric body 50, are connected in the third direction at the boundary between reflective film 82D (antenna surface 81D) and reflective film 82G (antenna surface 81G). According to this structure, the effect described in (2-3) above can be obtained.

[0527] (2-7) When viewed through a plane that cuts through the center point P2 of the reflective film 82B and the center point P2 of the reflective film 82E and along the arrangement direction of the reflective films 82B and 82E, i.e. the third direction and the z direction, the portions connecting the two ends of the third direction of the reflective film 82B and the portions connecting the two ends of the third direction of the reflective film 82E are respectively formed into arcs with a central angle of less than 180°.

[0528] Based on this structure, reflective film 82B and reflective film 82E can each maintain a spherical shape formed with a certain curvature, and can be formed such that the length of the third direction of reflective film 82B and the length of the third direction of reflective film 82E are each shorter than the radius of reflective film 82B and the radius of reflective film 82E, respectively.

[0529] Furthermore, the relationship between reflective films 82C and 82F, and between reflective films 82D and 82G, is the same as the relationship between reflective films 82B and 82E. Therefore, the same effects as described above can be achieved with each of the reflective films 82C and 82F, and between reflective films 82D and 82G.

[0530] (2-10) The gas space defined by antenna surface 81A and dielectric body 50 and the gas space 92E defined by antenna surface 81E and dielectric body 50 are connected in the fourth direction at the boundary between reflective film 82A (antenna surface 81A) and reflective film 82E (antenna surface 81E). The gas space 92B defined by antenna surface 81B and dielectric body 50 and the gas space 92F defined by antenna surface 81F and dielectric body 50 are connected in the fourth direction at the boundary between reflective film 82B (antenna surface 81B) and reflective film 82F (antenna surface 81F). The gas space 92C defined by antenna surface 81C and dielectric body 50 and the gas space defined by antenna surface 81G and dielectric body 50 are connected in the fourth direction at the boundary between reflective film 82C (antenna surface 81C) and reflective film 82G (antenna surface 81G). The gas space divided by antenna surface 81D and dielectric body 50 and the gas space divided by antenna surface 81H and dielectric body 50 are connected in a fourth direction at the boundary between reflective film 82D (antenna surface 81D) and reflective film 82H (antenna surface 81H). According to this structure, the effects described in (2-3) above can be obtained.

[0531] (2-11) When viewed through a plane that passes through the center point P2 of the reflective film 82B and the center point P2 of the reflective film 82F and along the arrangement direction of the reflective films 82B and 82F, i.e. the third direction and the z direction, the portions connecting the two ends of the third direction of the reflective film 82B and the portions connecting the two ends of the third direction of the reflective film 82F are respectively formed into arcs with a central angle of less than 180°.

[0532] Based on this structure, reflective film 82B and reflective film 82F can each maintain a spherical shape formed with a certain curvature, and can be formed such that the length of the third direction of reflective film 82B and the length of the third direction of reflective film 82F are each shorter than the radius of reflective film 82B and the radius of reflective film 82F, respectively.

[0533] Furthermore, the relationships between reflective films 82A and 82E, 82C and 82G, and 82D and 82H are the same as those between reflective films 82B and 82F. Therefore, the same effects as described above can be achieved with each of the following relationships: between reflective films 82A and 82E, 82C and 82G, and 82D and 82H.

[0534] [Third Implementation Method]

[0535] Reference Figures 46-56 The terahertz device 10 of the third embodiment will be described below. The main difference between the terahertz device 10 of this embodiment and the terahertz device 10 of the first embodiment is the structure of the antenna substrate 70. In the following description, some components that are common to the terahertz device 10 of the first embodiment will be omitted from the description. Furthermore, although the structure of the antenna substrate 70 differs from that of the antenna substrate 70 of the first embodiment, the multiple individual antenna substrates are sequentially labeled 70A, 70B, 70C, etc., for identification.

[0536] like Figure 46 and Figure 52 As shown, the terahertz device 10 includes a plurality of terahertz elements 20, a dielectric body 50 as an example of a holding member, an antenna substrate 70, a reflective film 82, and a gas space 92.

[0537] like Figure 46 As shown, the plurality of terahertz elements 20 include terahertz element 20A, terahertz element 20B, terahertz element 20C, terahertz element 20D, terahertz element 20E, terahertz element 20F, terahertz element 20G, terahertz element 20H, and terahertz element 20I. Terahertz elements 20A to 20I have the same structure as each other and are identical in structure to the terahertz element 20 of the first embodiment.

[0538] The dielectric body 50 surrounds each of the plurality of terahertz elements 20. As an example, such as... Figure 52 and Figure 53As shown, the dielectric body 50 surrounds the entire terahertz element 20E, covering the main surface 21, back surface 22, and side surfaces 23-26 of the terahertz element 20E. Similarly, the dielectric body 50 surrounds the entirety of each terahertz element 20A-20D and 20F-20I, covering the main surface 21, back surface 22, and side surfaces 23-26 of each terahertz element 20A-20D and 20F-20I.

[0539] The main surface 21, back surface 22, and side surfaces 23-26 of each terahertz element 20A-20I are in contact with the dielectric body 50. That is, in this embodiment, the dielectric body 50, like in the first embodiment, surrounds each terahertz element 20A-20I in a manner that does not create gaps between the dielectric body 50 and each terahertz element 20A-20I. In other words, the dielectric body 50 seals each terahertz element 20A-20I.

[0540] like Figure 46 As shown, the dielectric body 50 is formed, for example, as a plate with the z-direction as its thickness direction. Specifically, the dielectric body 50 is a square plate with equal lengths in the x-direction and y-direction. Viewed from the z-direction, the dielectric body 50 is a square shape that is slightly larger than the antenna substrate 70. That is, the dielectric body 50 protrudes from both sides of the antenna substrate 70 in the x-direction and from both sides of the antenna substrate 70 in the y-direction.

[0541] like Figure 52 and Figure 53 As shown, the dielectric body 50 has a dielectric main surface 51 and a dielectric back surface 52 as a surface intersecting the z-direction. The dielectric main surface 51 and the dielectric back surface 52 are, for example, orthogonal with respect to the z-direction. The dielectric main surface 51 faces downward. The dielectric back surface 52 is the surface opposite to the dielectric main surface 51 and faces upward. In this embodiment, the dielectric back surface 52 constitutes the device main surface 11.

[0542] like Figure 46 As shown, the dielectric body 50 has: a first dielectric side surface 53 and a second dielectric side surface 54 as end faces in the x-direction; and a third dielectric side surface 55 and a fourth dielectric side surface 56 as end faces in the y-direction. Each dielectric side surface 53 to 56 constitutes a part of the device side surfaces 13 to 16. In this embodiment, the first dielectric side surface 53 and the second dielectric side surface 54, the third dielectric side surface 55 and the fourth dielectric side surface 56 are orthogonal.

[0543] The terahertz element 20, similar to that in the first embodiment, is disposed within the dielectric body 50 with the element's main surface 21 facing the dielectric's main surface 51. As an example, such as... Figure 52 and Figure 53As shown, terahertz elements 20B, 20D-20F, and 20H are respectively disposed between the dielectric main surface 51 and the dielectric back surface 52. Furthermore, although not shown, terahertz elements 20A, 20C, 20G, and 20I are also disposed between the dielectric main surface 51 and the dielectric back surface 52. In this embodiment, similar to the first embodiment, the length in the z-direction of the dielectric body 50, i.e., the dielectric thickness D2, is set in a manner that satisfies the resonance condition of the electromagnetic waves received by the terahertz element 20.

[0544] like Figure 46 As shown, viewed from the z-direction, the terahertz elements 20A to 20I are arranged in a lattice pattern. More specifically, the terahertz elements 20A to 20C are arranged with mutual alignment in the x-direction and spaced apart in the y-direction. The terahertz elements 20D to 20F are arranged with mutual alignment in the x-direction and spaced apart in the y-direction. The terahertz elements 20G to 20I are arranged with mutual alignment in the x-direction and spaced apart in the y-direction. The rows of terahertz elements 20A to 20C, the rows of terahertz elements 20D to 20F, and the rows of terahertz elements 20G to 20I are arranged with mutual alignment in the y-direction and spaced apart in the x-direction. That is, the terahertz elements 20A, 20D, and 20G are arranged with mutual alignment in the y-direction and spaced apart in the x-direction. Terahertz elements 20B, 20E, and 20H are arranged spaced apart in the x-direction, aligned with each other in the y-direction. Terahertz elements 20C, 20F, and 20I are arranged spaced apart in the x-direction, aligned with each other in the y-direction. In this embodiment, the spacing (inter-element distance) between adjacent terahertz elements 20 in both the x and y directions is equal. Here, if the maximum offset between adjacent terahertz elements 20 in both the x and y directions is, for example, within 5% of the average spacing between adjacent terahertz elements 20 in both directions, it can be said that the spacing (inter-element distance) between adjacent terahertz elements 20 in both the x and y directions is equal. Here, the spacing (inter-element distance) in the x-direction is the distance between the receiving points P1 of adjacent terahertz elements 20 connected in the x-direction, and the spacing (inter-element distance) in the y-direction is the distance between the receiving points P1 of adjacent terahertz elements 20 connected in the y-direction.

[0545] like Figures 46-48As shown, in this embodiment, the antenna substrate 70 viewed from above has a square shape. More specifically, the first substrate side surface 73T and the second substrate side surface 74T are opposite to each other in the x-direction and extend along the y-direction. The third substrate side surface 75T and the fourth substrate side surface 76T are opposite to each other in the y-direction and extend along the x-direction. Furthermore, the material of the antenna substrate 70 is the same as that of the antenna substrate 70 in the first embodiment.

[0546] The antenna substrate 70 in this embodiment is composed of a combination of multiple (nine in this embodiment) individual antenna substrates 70A, 70B, 70C, 70D, 70E, 70F, 70G, 70H, and 70I. More specifically, the antenna substrate 70 has rows of individual antenna substrates 70A, 70B, and 70C, rows of individual antenna substrates 70D, 70E, and 70F, and rows of individual antenna substrates 70G, 70H, and 70I. These rows of individual antenna substrates 70A to 70C, 70D to 70F, and 70G to 70I extend along the y-direction.

[0547] Individual antenna substrates 70A to 70C constitute the first substrate side surface 73T; individual antenna substrates 70G to 70I constitute the second substrate side surface 74T; individual antenna substrates 70A, 70D, and 70G constitute the third substrate side surface 75T; and individual antenna substrates 70C, 70F, and 70I constitute the fourth substrate side surface 76T. That is, individual antenna substrates 70A, 70C, 70G, and 70H constitute the four corners of antenna substrate 70.

[0548] In this embodiment, individual antenna substrate 70B is sandwiched between individual antenna substrates 70A and 70C in the y-direction. Individual antenna substrate 70E is sandwiched between individual antenna substrates 70D and 70F in the y-direction. Individual antenna substrate 70H is sandwiched between individual antenna substrates 70G and 70I in the y-direction. Individual antenna substrate 70D is sandwiched between individual antenna substrates 70A and 70G in the x-direction. Individual antenna substrate 70E is sandwiched between individual antenna substrates 70B and 70H in the x-direction. Individual antenna substrate 70F is sandwiched between individual antenna substrates 70C and 70I in the x-direction.

[0549] like Figure 46As shown, individual antenna substrate 70A is configured opposite to terahertz element 20A in the thickness direction (z-direction). Individual antenna substrate 70B is configured opposite to terahertz element 20B in the thickness direction (z-direction). Individual antenna substrate 70C is configured opposite to terahertz element 20C in the thickness direction (z-direction). Individual antenna substrate 70D is configured opposite to terahertz element 20D in the thickness direction (z-direction). Individual antenna substrate 70E is configured opposite to terahertz element 20E in the thickness direction (z-direction). Individual antenna substrate 70F is configured opposite to terahertz element 20F in the thickness direction (z-direction). Individual antenna substrate 70G is arranged opposite to terahertz element 20G in the thickness direction (z-direction). Individual antenna substrate 70H is arranged opposite to terahertz element 20H in the thickness direction (z-direction). Individual antenna substrate 70I is arranged opposite to terahertz element 20I in the thickness direction (z-direction). In this embodiment, individual antenna substrates 70A to 70I are respectively arranged below each terahertz element 20A to 20I.

[0550] like Figure 47 As shown, the antenna substrate 70, similar to the first embodiment, has an antenna recess 80 that is recessed from the substrate main surface 71T to the substrate back surface 72T. Specifically, as... Figure 47 and Figure 48 As shown, in this embodiment, the individual antenna substrate 70A has an antenna recess 80A, the individual antenna substrate 70B has an antenna recess 80B, the individual antenna substrate 70C has an antenna recess 80C, the individual antenna substrate 70D has an antenna recess 80D, the individual antenna substrate 70E has an antenna recess 80E, the individual antenna substrate 70F has an antenna recess 80F, the individual antenna substrate 70G has an antenna recess 80G, the individual antenna substrate 70H has an antenna recess 80H, and the individual antenna substrate 70I has an antenna recess 80I.

[0551] like Figure 52 and Figure 53 As shown, the antenna recess 80, similar to that in the first embodiment, has an antenna surface 81 that faces the terahertz element 20 across the dielectric body 50 and the gas space 92. Specifically, as... Figure 47 and Figure 48As shown, in this embodiment, antenna recess 80A has antenna surface 81A, antenna recess 80B has antenna surface 81B, antenna recess 80C has antenna surface 81C, and antenna recess 80D has antenna surface 81D. Additionally, antenna recess 80E has antenna surface 81E, antenna recess 80F has antenna surface 81F, antenna recess 80G has antenna surface 81G, antenna recess 80H has antenna surface 81H, and antenna recess 80I has antenna surface 81I. These antenna surfaces 81A to 81I, viewed from above, have the same shape as the openings of the corresponding antenna recesses 80A to 80I.

[0552] like Figure 52 and Figure 53 As shown, similarly to the first embodiment, the reflective film 82 is formed on the antenna surface 81. The reflective film 82 is formed over the entire antenna surface 81. On the other hand, the reflective film 82 is not formed on the main surface 71T of the substrate. That is, the reflective film 82 has a shape that is substantially the same as that of the antenna surface 81. The reflective film 82 is formed using the same material as the reflective film 82 in the first embodiment.

[0553] like Figure 47 and Figure 48 As shown, the reflective film 82 includes: a reflective film 82A formed on antenna surface 81A; a reflective film 82B formed on antenna surface 81B; a reflective film 82C formed on antenna surface 81C; a reflective film 82D formed on antenna surface 81D; a reflective film 82E formed on antenna surface 81E; a reflective film 82F formed on antenna surface 81F; a reflective film 82G formed on antenna surface 81G; a reflective film 82H formed on antenna surface 81H; and a reflective film 82I formed on antenna surface 81I. In this embodiment, reflective films 82A to 82I are formed as a single integral component.

[0554] Reflective film 82A has a shape substantially the same as antenna surface 81A, reflective film 82B has a shape substantially the same as antenna surface 81B, reflective film 82C has a shape substantially the same as antenna surface 81C, reflective film 82D has a shape substantially the same as antenna surface 81D, reflective film 82E has a shape substantially the same as antenna surface 81E, reflective film 82F has a shape substantially the same as antenna surface 81F, reflective film 82G has a shape substantially the same as antenna surface 81G, reflective film 82H has a shape substantially the same as antenna surface 81H, and reflective film 82I has a shape substantially the same as antenna surface 81I. In other words, reflective films 82A to 82I are each a parabolic mirror, curved in a mortar-like shape. Reflective films 82A to 82I are each partially missing a circular shape when viewed from above. Reflective films 82A to 82I are each curved in a manner that convexes towards the back surface 12 of the device (back surface 72 of the substrate). Reflective films 82A to 82I are each open in one direction (upward in this embodiment).

[0555] like Figure 52 and Figure 53 As shown, the reflective films 82A to 82I are opposite to the dielectric body 50 in the z-direction. In other words, the reflective films 82A to 82I are disposed at positions opposite to the dielectric body 50.

[0556] The electromagnetic waves reflected by the reflective film 82 are output to the receiving point P1. As an example, such as... Figure 52 As shown, the electromagnetic waves reflected by the reflective film 82D are output to the receiving point P1 of the terahertz element 20D. The electromagnetic waves reflected by the reflective film 82E are output to the receiving point P1 of the terahertz element 20E. The electromagnetic waves reflected by the reflective film 82F are output to the receiving point P1 of the terahertz element 20F. Figure 53 As shown, electromagnetic waves reflected by reflective film 82B are output to receiving point P1 of terahertz element 20B. Electromagnetic waves reflected by reflective film 82H are output to receiving point P1 of terahertz element 20H. Although not shown, electromagnetic waves reflected by reflective film 82A are output to receiving point P1 of terahertz element 20A. Electromagnetic waves reflected by reflective film 82C are output to receiving point P1 of terahertz element 20C. Electromagnetic waves reflected by reflective film 82G are output to receiving point P1 of terahertz element 20G. Electromagnetic waves reflected by reflective film 82I are output to receiving point P1 of terahertz element 20I.

[0557] The arrangement of the reflective film 82 and the terahertz element 20 is the same as in the first embodiment. Furthermore, the dimensional relationship between the reflective film 82 and the terahertz element 20 is also the same as in the first embodiment. That is, viewed from above, the reflective films 82A to 82I are respectively formed to be larger than the terahertz elements 20A to 20I.

[0558] like Figure 52 and Figure 53 As shown, the antenna substrate 70 and the dielectric body 50 are fixed via a bonding layer 91, similar to the first embodiment. The bonding layer 91 is configured such that it does not protrude inward from the reflective film 82 (in other words, the terahertz element 20 side).

[0559] like Figures 49-51 As shown, in this embodiment, the antenna substrate 70 uses three different antenna substrates.

[0560] like Figure 49As shown, the individual antenna substrate 70G has a main surface 71 and a back surface 72, which are surfaces intersecting the z-direction. The main surface 71 and the back surface 72 are respectively surfaces intersecting the z-direction, and in this embodiment, they are orthogonal relative to the z-direction. The main surface 71 and the back surface 72, viewed from the z-direction, are both square in shape. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, the same shape. However, this is not a limitation, and the main surface 71 and the back surface 72 may also have different shapes.

[0561] The individual antenna substrate 70G has four base side surfaces: a first base side surface 73, a second base side surface 74, a third base side surface 75, and a fourth base side surface 76. These base side surfaces 73 to 76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each base side surface 73 to 76 is a surface orthogonal to the relative direction of the base main surface 71 and the base back surface 72, connecting the base main surface 71 and the base back surface 72.

[0562] The first base side surface 73 and the second base side surface 74 are surfaces facing each other in the x-direction. Viewed from the z-direction, each base side surface 73, 74 extends along the y-direction. The second base side surface 74 constitutes the second base side surface 74T of the antenna base 70 (see reference). Figure 48 Part of ).

[0563] The third base side surface 75 and the fourth base side surface 76 are surfaces facing each other in the y direction. Viewed from the z direction, each base side surface 75, 76 extends along the x direction. The third base side surface 75 forms part of the third base side surface 75T of the antenna base 70.

[0564] The antenna surface 81G of the antenna recess 80G is recessed from the main surface 71 of the individual antenna substrate 70G toward the back surface 72 of the substrate. In this embodiment, the antenna surface 81G is recessed in a generally spherical shape. When viewed in a cross-section of the individual antenna substrate 70G cut along planes in the x and z directions, the antenna surface 81G is curved in a manner convex toward the back surface 72 of the substrate. When viewed in a cross-section of the individual antenna substrate 70G cut along planes in the y and z directions, the antenna surface 81G is curved in a manner convex toward the back surface 72 of the substrate. The antenna surface 81G opens in the main surface 71 of the substrate. That is, the antenna surface 81G opens upwards.

[0565] The opening of the antenna surface 81G appears as a partially missing circular shape when viewed from above. Specifically, the opening of the antenna surface 81G is missing at the ends of the first base side surface 73 (opening end 81Ga) and the fourth base side surface 76 (opening end 81Gb). These opening ends 81Ga and 81Gb appear as straight lines when viewed from above.

[0566] Viewed from above, the opening 81Ga of the antenna surface 81G is formed at a position overlapping with the first substrate side surface 73, and the opening 81Gb is formed at a position overlapping with the fourth substrate side surface 76.

[0567] A reflective film 82G is formed on the antenna surface 81G. The reflective film 82G is formed integrally over the antenna surface 81G. On the other hand, the reflective film 82G is not formed on the substrate main surface 71.

[0568] Viewed from above, the opening of the reflective film 82G has the same shape as the opening of the antenna surface 81G. That is, viewed from above, the opening of the reflective film 82G has an opening end 82Ga that overlaps with the opening end 81Ga of the antenna surface 81G and an opening end 82Gb that overlaps with the opening end 81Gb of the antenna surface 81G. Viewed from above, the two opening ends 81Ga and 81Gb are formed in a straight line.

[0569] Viewed from above, the reflective film 82G is formed with its center point P2 differing from the center of the individual antenna substrate 70G in both the x and y directions. In this embodiment, viewed from above, the reflective film 82G is disposed offset from the center of the individual antenna substrate 70G in both the x and y directions towards the first substrate side surface 73 and the fourth substrate side surface 76. More specifically, viewed from above, the reflective film 82G is formed with its center point P2 offset from the center of the individual antenna substrate 70G in the x direction towards the first substrate side surface 73. Furthermore, viewed from above, the reflective film 82G is formed with its center point P2 offset from the center of the individual antenna substrate 70G in the y direction towards the fourth substrate side surface 76.

[0570] Viewed from above, the center point P2 of the reflective film 82G coincides with the center point of the antenna surface 81E, and the shape of the reflective film 82G is approximately the same as the shape of the antenna surface 81G. Therefore, viewed from above, the antenna surface 81G and the reflective film 82G are formed in a manner in which the center point of the antenna surface 81G and the center of the individual antenna substrate 70G in the x and y directions are at different positions.

[0571] Viewed from above, the portions at both ends of the arc-shaped outer periphery connecting the reflective film 82G and the reflective film 82H in the first direction are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the arc-shaped outer periphery connecting the reflective film 82G in the first direction (y direction in this embodiment) are formed into an arc shape with a central angle θg1 of less than 180°.

[0572] Viewed from above, the portions at both ends of the second direction (the arrangement direction of the reflective films 82G and 82D) of the arc-shaped outer periphery connecting the reflective film 82G are formed into an arc shape with a central angle of less than 180°. In this embodiment, viewed from above, the portions at both ends of the second direction (x direction in this embodiment) of the arc-shaped outer periphery connecting the reflective film 82G are formed into an arc shape with a central angle θg2 of less than 180°.

[0573] Viewed from above, since the reflective film 82G and the antenna surface 81G have approximately the same shape, similarly to the reflective film 82G, the portions at both ends of the arrangement direction of the antenna surfaces 81G and 81H (the y-direction in this embodiment) connecting the arc-shaped outer periphery of the antenna surface 81G are formed into arcs with a central angle of less than 180°. Viewed from above, the portions at both ends of the arrangement direction of the antenna surfaces 81G and 81D (the x-direction in this embodiment) connecting the arc-shaped outer periphery of the antenna surface 81G are also formed into arcs with a central angle of less than 180°.

[0574] Viewed from above, the length LS1 of the perpendicular line from the opening end 82Ga of the reflective film 82G, passing through the center point P2 of the reflective film 82G, is smaller than the radius RG of the reflective film 82G. Similarly, the length LS2 of the perpendicular line from the opening end 82Gb of the reflective film 82G, passing through the center point P2 of the reflective film 82G, is smaller than the radius RG of the reflective film 82G. Furthermore, viewed from above, the perpendicular line from the opening end 82Ga of the reflective film 82G is a straight line extending along the x-direction, and the perpendicular line from the opening end 82Gb of the reflective film 82G is a straight line extending along the y-direction. Additionally, length LS1 is the length along the second direction (x-direction in this embodiment), and length LS2 is the length along the first direction (y-direction in this embodiment). Therefore, the length (LS1+RG) of the reflective film 82G in the first direction is shorter than the diameter (RG×2) of the reflective film 82G, and the length (LS2+RG) of the reflective film 82G in the second direction is shorter than the diameter of the reflective film 82G. Like this, one could say that from above, along the reflective film 82G~82I (refer to...) Figure 37 The size of the reflective film 82G in the first direction (the direction in which the reflective films 82G, 82D, and 82A are arranged) is smaller than the size of the reflective film 82G in a third direction (the direction different from both the first and second directions). Here, the third direction is the direction that intersects the first and second directions when viewed from above. Furthermore, it can be said that, viewed from above, the size of the reflective film 82G along the second direction is smaller than the size of the reflective film 82G along the third direction.

[0575] Furthermore, since the reflective film 82G and the antenna surface 81G have the same shape when viewed from above, the relationship between the length of the perpendicular line passing through the center point of the antenna surface 81G and the radius of the antenna surface 81G among the perpendicular lines of the opening ends 81Ga and 81Gb of the antenna surface 81G is the same as the relationship between the lengths LS1 and LS2 of the reflective film 82G and the radius RG of the reflective film 82G.

[0576] Although not illustrated, when viewed in a cross-section of the individual antenna substrate 70G cut along the y and z directions using a plane passing through the center point P2 of the reflective film 82G, the portion connecting the two ends of the reflective film 82G in the y direction is formed into an arc shape with a central angle of less than 180°. Similarly, when viewed in a cross-section of the individual antenna substrate 70G cut along the x and z directions using a plane passing through the center point P2 of the reflective film 82G, the portion connecting the two ends of the reflective film 82G in the x direction is formed into an arc shape with a central angle of less than 180°.

[0577] Although not shown in the diagram, when viewed in a cross-section of the individual antenna base 70G cut along the y and z directions using planes passing through the center point of the antenna surface 81G, the portion connecting the two ends of the antenna surface 81G in the y direction is formed into an arc shape with a central angle of less than 180°. Similarly, when viewed in a cross-section of the individual antenna base 70G cut along the x and z directions using planes passing through the center point of the antenna surface 81G, the portion connecting the two ends of the antenna surface 81G in the x direction is formed into an arc shape with a central angle of less than 180°.

[0578] Viewed from above, the individual antenna substrate 70G has a peripheral wall portion 78G, which surrounds the opening of the antenna recess 80G, except for a portion of the opening that is missing. The peripheral wall portion 78G constitutes the substrate main surface 71 of the individual antenna substrate 70G.

[0579] like Figure 48 As shown, the individual antenna substrates 70A, 70D, 70H, and 70I have the same shape. Therefore, as an example, regarding... Figure 50 The structure of the individual antenna substrate 70H shown will be described, while the descriptions of the structures of individual antenna substrates 70A, 70D, and 70I will be omitted.

[0580] like Figure 50 As shown, the individual antenna substrate 70H, like the individual antenna substrate 70G, has a main surface 71 and a back surface 72, which are surfaces intersecting the z-direction. The main surface 71 and the back surface 72, viewed from the z-direction, are rectangular in shape. Furthermore, in this embodiment, the main surface 71 and the back surface 72 are, for example, identical in shape. However, this is not a limitation; the main surface 71 and the back surface 72 may also have different shapes.

[0581] The individual antenna substrate 70H has four base side surfaces: a first base side surface 73, a second base side surface 74, a third base side surface 75, and a fourth base side surface 76. These base side surfaces 73-76 are side-facing surfaces in the terahertz device 10 (antenna substrate 70). Each base side surface 73-76 is orthogonal to the relative direction of the base main surface 71 and the base back surface 72. Each base side surface 73-76 connects the base main surface 71 and the base back surface 72.

[0582] The first base side surface 73 and the second base side surface 74 are surfaces facing each other in the x-direction. Viewed from the z-direction, each base side surface 73, 74 extends along the y-direction. The length in the y-direction of each base side surface 73, 74 of a single antenna base 70H is shorter than the length in the y-direction of each base side surface 73, 74 of a single antenna base 70G.

[0583] The third base side surface 75 and the fourth base side surface 76 are surfaces facing each other in the y direction. Viewed from the z direction, each base side surface 75 and 76 extends along the x direction. The x-direction length of each base side surface 75 and 76 of a single antenna base 70H is equal to the x-direction length of each base side surface 75 and 76 of a single antenna base 70G.

[0584] The antenna surface 81H of the antenna recess 80H is recessed from the main surface 71 of the substrate toward the back surface 72 of the substrate. In this embodiment, the antenna surface 81H is approximately spherical. When viewed in a cross-section of the individual antenna substrate 70H cut along planes in the x and z directions, the antenna surface 81H is curved in a convex manner toward the back surface 72 of the substrate. When viewed in a cross-section of the individual antenna substrate 70H cut along planes in the y and z directions, the antenna surface 81H is curved in a convex manner toward the back surface 72 of the substrate. The antenna surface 81H opens in the main surface 71 of the substrate. That is, the antenna surface 81H opens upwards.

[0585] The opening of antenna surface 81H appears as a partially incomplete circular shape when viewed from above. Specifically, the opening ends 81Ha on the first base side surface 73, 81Hb on the third base side surface 75, and 81Hc on the fourth base side surface 76 are missing from the opening of antenna surface 81H. When viewed from above, the opening ends 81Ha to 81Hc are respectively formed as straight lines.

[0586] Viewed from above, the opening 81Ha of the antenna surface 81H is formed at a position overlapping with the first base side surface 73, the opening 81Hb is formed at a position overlapping with the third base side surface 75, and the opening 81Hc is formed at a position overlapping with the fourth base side surface 76.

[0587] A reflective film 82H is formed on the antenna surface 81H. The reflective film 82H is formed over the entire antenna surface 81H. On the other hand, the reflective film 82H is not formed on the substrate main surface 71 of the separate antenna substrate 70H.

[0588] Viewed from above, the opening of the reflective film 82H has the same shape as the opening of the antenna surface 81H. That is, viewed from above, the opening of the reflective film 82H has: an opening end 82Ha located at a position overlapping with the opening end 81Ha of the antenna surface 81H; an opening end 82Hb located at a position overlapping with the opening end 81Hb of the antenna surface 81H; and an opening end 82Hc located at a position overlapping with the opening end 81Hc of the antenna surface 81H. Viewed from above, the opening ends 82Ha to 82Hc are each formed as a straight line.

[0589] Viewed from above, the reflective film 82H is formed such that its center point P2 is located at a different position from the center of the individual antenna substrate 70H in the x-direction. In this embodiment, viewed from above, the reflective film 82H is formed such that its center point P2 in the x-direction is offset from the center of the individual antenna substrate 70H in the x-direction, closer to the side surface 73 of the first substrate. Viewed from above, the reflective film 82H is form...

Claims

1. A terahertz device, characterized in that, have: Multiple terahertz elements, including a first terahertz element and a second terahertz element that receive electromagnetic waves; and The system includes multiple reflecting surfaces, including: a first reflecting surface opposite to the first terahertz element in the thickness direction, which reflects incident electromagnetic waves toward the first terahertz element; and a second reflecting surface opposite to the second terahertz element in the thickness direction, which reflects incident electromagnetic waves toward the second terahertz element. The first reflective surface opens onto the first terahertz element and curves in a concave manner in the direction away from the first terahertz element. The second reflector opens onto the second terahertz element and curves in a concave manner away from the second terahertz element. When the direction parallel to the thickness direction of the first and second terahertz elements is taken as the height direction of the terahertz device, The first reflecting surface and the second reflecting surface are arranged adjacently in a first direction that intersects the height direction of the terahertz device. In the same plane view from the height direction of the terahertz device, at least one of the lengths of the first and second reflecting surfaces along the first direction and passing through the respective center points of the first and second reflecting surfaces is less than the lengths of the first and second reflecting surfaces along a second direction that is orthogonal to the first direction and intersects the height direction and passing through the respective center points of the first and second reflecting surfaces.

2. The terahertz device as described in claim 1, characterized in that: The first reflective surface and the second reflective surface are each spherical. Viewed from the height direction of the terahertz device, at least one of the portions connecting the two ends of the first reflective surface in the first direction and the portions connecting the two ends of the first reflective surface in the first direction on the outer periphery of the second reflective surface is formed as an arc with a central angle of less than 180°.

3. The terahertz device as described in claim 1, characterized in that: The plurality of terahertz elements includes a third terahertz element. The plurality of reflecting surfaces includes a third reflecting surface that is opposite the third terahertz element in the height direction of the terahertz device and reflects the incident electromagnetic waves toward the third terahertz element. The third reflector opens onto the third terahertz element and curves in a concave manner away from the third terahertz element. Viewed from the height of the terahertz device, the third reflecting surface is arranged adjacent to the second reflecting surface on the opposite side of the first reflecting surface in the first direction. In the same plane view from the height direction of the terahertz device, the length of the third reflecting surface along the first direction and passing through the center point of the third reflecting surface is smaller than the length of the third reflecting surface along the second direction and passing through the center point of the third reflecting surface.

4. The terahertz device as described in claim 3, characterized in that: The third reflective surface has a spherical shape. Viewed from the height direction of the terahertz device, the portion connecting the two ends of the outer periphery of the third reflecting surface in the first direction forms an arc shape with a central angle of less than 180°.

5. The terahertz device as described in claim 3, characterized in that: The second reflective surface has a spherical shape. Viewed from the height direction of the terahertz device, the portions of the two ends of the outer periphery of the second reflecting surface in the first direction are formed into an arc shape with a central angle of less than 90°.

6. The terahertz device as described in claim 1, characterized in that: The plurality of terahertz elements includes a third terahertz element. The plurality of reflecting surfaces includes a third reflecting surface that is opposite the third terahertz element in the height direction of the terahertz device and reflects the incident electromagnetic waves toward the third terahertz element. The third reflector opens onto the third terahertz element and curves in a concave manner away from the third terahertz element. When the direction intersecting the height direction of the terahertz device and different from the first direction and the second direction is taken as the third direction, and the direction intersecting the height direction of the terahertz device and different from the first direction, the second direction and the third direction is taken as the fourth direction, Viewed from the height direction of the terahertz device, the third reflecting surface is arranged adjacent to the first reflecting surface in the third direction, and adjacent to the second reflecting surface in the fourth direction. In the same plane view from the height direction of the terahertz device, at least one of the length of the third reflecting surface along the third direction and passing through the center point of the third reflecting surface and the length of the third reflecting surface along the fourth direction and passing through the center point of the third reflecting surface is smaller than the length of the third reflecting surface along the second direction and passing through the center point of the third reflecting surface.

7. The terahertz device as described in claim 6, characterized in that: The third terahertz element is disposed at a different position in the second direction than the first terahertz element and the second terahertz element, and is disposed in the first direction at a position between the first terahertz element and the second terahertz element.

8. The terahertz device as described in claim 6, characterized in that: The third reflective surface has a spherical shape. Viewed from the height direction of the terahertz device, at least one of the portions of the two ends of the third direction connecting the outer periphery of the third reflecting surface and the portions of the two ends of the fourth direction connecting the outer periphery of the third reflecting surface forms an arc shape with a central angle of less than 180°.

9. The terahertz device as described in claim 6, characterized in that: In the same plane view from the height direction of the terahertz device, the length of the first reflecting surface along the third direction and passing through the center point of the first reflecting surface is smaller than the length of the first reflecting surface along the second direction and passing through the center point of the first reflecting surface.

10. The terahertz device as claimed in claim 6, characterized in that: In the same plane view from the height direction of the terahertz device, the length of the second reflecting surface along the fourth direction and passing through the center point of the second reflecting surface is smaller than the length of the second reflecting surface along the second direction and passing through the center point of the second reflecting surface.

11. The terahertz device as claimed in claim 1, characterized in that: The plurality of terahertz elements includes a third terahertz element and a fourth terahertz element. The plurality of reflective surfaces includes: A third reflecting surface, opposite to the third terahertz element in the thickness direction, which reflects incident electromagnetic waves toward the third terahertz element; and A fourth reflecting surface, which is opposite to the fourth terahertz element in the thickness direction and reflects the incident electromagnetic wave toward the fourth terahertz element. The third reflector opens onto the third terahertz element and curves in a concave manner away from the third terahertz element. The fourth reflector opens onto the fourth terahertz element and curves in a concave manner in the direction away from the fourth terahertz element. The second direction is the direction orthogonal to the first direction when viewed from the height of the terahertz device. Viewed from the height direction of the terahertz device, the third reflecting surface is arranged adjacent to the first reflecting surface in the second direction, the fourth reflecting surface is arranged adjacent to the second reflecting surface in the second direction, and the third and fourth reflecting surfaces are arranged adjacent to each other in the first direction. In the same plane view from the height direction of the terahertz device, at least one of the lengths of the third and fourth reflecting surfaces along the first direction and passing through the respective center points of the third and fourth reflecting surfaces is less than each of the lengths of the third and fourth reflecting surfaces along a third direction different from the first and second directions and intersecting the height direction, and passing through the respective center points of the third and fourth reflecting surfaces.

12. The terahertz device as claimed in claim 11, characterized in that: In the same plan view from the height direction of the terahertz device, at least one of the lengths of the third and fourth reflecting surfaces along the second direction and passing through the respective center points of the third and fourth reflecting surfaces is less than each of the lengths of the third and fourth reflecting surfaces along a third direction different from the first and second directions and intersecting the height direction, and passing through the respective center points of the third and fourth reflecting surfaces.

13. The terahertz device as claimed in claim 11, characterized in that: The third and fourth reflecting surfaces are each spherical. Viewed from the height direction of the terahertz device, at least one of the portions connecting the two ends of the outer periphery of the third reflecting surface in the second direction and the portions connecting the two ends of the outer periphery of the fourth reflecting surface in the second direction is formed as an arc with a central angle of less than 180°.

14. The terahertz device as claimed in claim 1, characterized in that: It has an antenna substrate having a plurality of antenna surfaces opposite each of the plurality of terahertz elements in the height direction of the terahertz device. The plurality of reflective surfaces are composed of reflective films formed on each of the plurality of antenna surfaces.

15. The terahertz device as claimed in claim 1, characterized in that: It has an antenna substrate having a plurality of antenna surfaces opposite each of the plurality of terahertz elements in the height direction of the terahertz device. The antenna substrate is made of metal. The plurality of reflective surfaces are composed of the plurality of antenna surfaces.

16. The terahertz device as described in claim 14 or 15, characterized in that: It has holding members mounted on the antenna substrate to hold the plurality of terahertz elements respectively. The retaining component covers the plurality of reflective surfaces.

17. The terahertz device as claimed in claim 16, characterized in that: At the boundary of adjacent reflective surfaces among the plurality of reflective surfaces, a partition wall is provided to separate the adjacent reflective surfaces by contacting the retaining member.

18. A terahertz device, characterized in that, have: Multiple terahertz elements, including a first terahertz element and a second terahertz element that generate electromagnetic waves; and A plurality of reflecting surfaces, including: a first reflecting surface opposite to the first terahertz element in the thickness direction, which reflects electromagnetic waves generated from the first terahertz element in one direction; and a second reflecting surface opposite to the second terahertz element in the thickness direction, which reflects electromagnetic waves generated from the second terahertz element in one direction. The first reflective surface opens onto the first terahertz element and curves in a concave manner in the direction away from the first terahertz element. The second reflector opens onto the second terahertz element and curves in a concave manner away from the second terahertz element. When the direction parallel to the thickness direction of the first and second terahertz elements is taken as the height direction of the terahertz device, The first reflecting surface and the second reflecting surface are arranged adjacently in a first direction that intersects the height direction of the terahertz device. In the same plan view from the height direction of the terahertz device, at least one of the lengths of the first and second reflecting surfaces along the first direction and passing through the center points of the first and second reflecting surfaces is less than the lengths of the first and second reflecting surfaces along a second direction that is perpendicular to the first direction and intersects the height direction and passing through the center points of the first and second reflecting surfaces.

19. The terahertz device as claimed in claim 18, characterized in that: It has an antenna substrate having a plurality of antenna surfaces opposite each of the plurality of terahertz elements in the height direction of the terahertz device. The plurality of reflective surfaces are composed of reflective films formed on each of the plurality of antenna surfaces.

20. The terahertz device as claimed in claim 18, characterized in that: It has an antenna substrate having a plurality of antenna surfaces opposite each of the plurality of terahertz elements in the height direction of the terahertz device. The antenna substrate is made of metal. The plurality of reflective surfaces are composed of the plurality of antenna surfaces.

21. The terahertz device as claimed in claim 19 or 20, characterized in that: It has holding members mounted on the antenna substrate to hold the plurality of terahertz elements respectively. The retaining component covers the plurality of reflective surfaces.

22. The terahertz device as claimed in claim 21, characterized in that: At the boundary of adjacent reflective surfaces among the plurality of reflective surfaces, a partition wall is provided to separate the adjacent reflective surfaces by contacting the retaining member.

Images