Light-emitting substrate and display device

Abstract

A light-emitting substrate includes a substrate, auxiliary electrode lines, a light-emitting device, and a photodetector. The auxiliary electrode lines are disposed on the substrate. The light-emitting device is disposed on the substrate and includes a first electrode, a light-emitting functional layer, and a second electrode sequentially stacked along a direction away from the substrate. The photodetector is disposed on the substrate and includes a third electrode and a fourth electrode. The auxiliary electrode lines are coupled to the fourth electrode and to the second electrode.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and more particularly to a light-emitting substrate and a display device. Background Technology

[0002] Display devices can be classified into various types according to different display principles. For example, an Organic Light-Emitting Diode (OLED) display device can include multiple OLED devices containing organic light-emitting materials, which emit light when driven by an electrical signal. By adjusting the magnitude of the electrical signal driving each OLED device, the brightness of that OLED device can be changed, thereby enabling the OLED display device to display images. OLED display devices have the advantages of self-illumination, high contrast, low power consumption, wide viewing angle, fast response speed, wide operating temperature range, and simple manufacturing, and have broad development prospects. Summary of the Invention

[0003] On one hand, a light-emitting substrate is provided. The light-emitting substrate includes a substrate, auxiliary electrode lines, a light-emitting device, and a photodetector. The auxiliary electrode lines are disposed on the substrate. The light-emitting device is disposed on the substrate and includes a first electrode, a light-emitting functional layer, and a second electrode sequentially stacked along a direction away from the substrate. The photodetector is disposed on the substrate and includes a third electrode and a fourth electrode. The auxiliary electrode lines are coupled to the fourth electrode and to the second electrode.

[0004] In some embodiments, the fourth electrode in the photodetector is disposed on the side of the second electrode in the light-emitting device that is close to the substrate, and the auxiliary electrode line is disposed on the side of the fourth electrode in the photodetector that is close to the substrate; the light-emitting substrate further includes a first connection portion; the first connection portion is disposed on the side of the auxiliary electrode line that is away from the substrate and on the side of the second electrode that is close to the substrate, and the first connection portion is coupled to the second electrode, the fourth electrode, and the auxiliary electrode line.

[0005] In some embodiments, the light-emitting substrate further includes a first insulating layer disposed on the side of the first connection portion away from the substrate and on the side of the second electrode of the light-emitting device close to the substrate. The first insulating layer includes a first opening that exposes at least a portion of the first connection portion, and the second electrode of the light-emitting device extends into the first opening and contacts the first connection portion in the first opening.

[0006] In some embodiments, the first insulating layer further includes a second opening, wherein the portion of the light-emitting functional layer in the light-emitting device located in the second opening is in contact with the first electrode in the light-emitting device.

[0007] In some embodiments, the first connection portion includes a first connection pattern, a second connection pattern, and a third connection pattern sequentially stacked along a direction away from the substrate, wherein the orthographic projection of the second connection pattern on the substrate is located inside the orthographic projection of the third connection pattern on the substrate. The first opening of the first insulating layer exposes at least a portion of the first connection pattern, at least a portion of the second connection pattern, and at least a portion of the third connection pattern; the light-emitting functional layer in the light-emitting device further extends into the first opening, and the portion of the light-emitting functional layer located in the first opening is discontinuous; the second electrode further extends into the first opening, and the portion of the second electrode located in the first opening contacts at least one of the first connection pattern, the second connection pattern, and the third connection pattern.

[0008] In some embodiments, the orthographic projection of the second connection pattern on the substrate lies inside the orthographic projection of the first connection pattern on the substrate. The portion of the second electrode located in the first opening is in contact with at least the first connection pattern.

[0009] In some embodiments, the light-emitting substrate further includes a second connecting portion disposed on the substrate, specifically on the side of the first connecting portion near the substrate and on the side of the auxiliary electrode line away from the substrate. The second connecting portion contacts the first connecting portion and the auxiliary electrode line.

[0010] In some embodiments, the light-emitting substrate further includes a second insulating layer and a third insulating layer, which are sequentially stacked on the substrate in a direction away from the substrate, and located on the side of the first connecting portion near the substrate and the side of the second connecting portion away from the substrate. The second insulating layer includes a third opening and a fourth opening. The orthographic projection of the upper edge of the third opening on the substrate is located inside the orthographic projection of the lower edge of the fourth opening on the substrate, and overlaps with the orthographic projection of the second connecting portion on the substrate. The first connecting portion contacts the second connecting portion through the third opening and the fourth opening. The upper edge of the third opening is the edge of the third opening away from the substrate, and the lower edge of the fourth opening is the edge of the fourth opening near the substrate.

[0011] In some embodiments, the second connection portion is disposed in the same layer as the third electrode in the photodetector.

[0012] In some embodiments, the first connection pattern in the first connection portion contacts the fourth electrode.

[0013] In some embodiments, the light-emitting substrate further includes a second insulating layer and a third insulating layer, which are sequentially stacked on the substrate along a direction away from the substrate and located on the side of the first connecting portion near the substrate and the side of the fourth electrode away from the substrate. The second insulating layer includes a fifth opening, and the third insulating layer includes a sixth opening. The orthographic projection of the upper edge of the fifth opening on the substrate lies inside the orthographic projection of the lower edge of the sixth opening on the substrate and overlaps with the orthographic projection of the fourth electrode on the substrate. The first connecting portion contacts the fourth electrode through the fifth opening and the sixth opening. The upper edge of the fifth opening is the edge of the fifth opening away from the substrate, and the lower edge of the sixth opening is the edge of the sixth opening near the substrate.

[0014] In some embodiments, the light-emitting substrate further includes a plurality of transistors, the plurality of transistors including at least one first transistor coupled to the light-emitting device and a second transistor coupled to the photodetector. The plurality of transistors are disposed on the substrate, each transistor including an active layer located on the side of the photodetector closer to the substrate. The photodetector includes a semiconductor pattern, the orthographic projection of the semiconductor pattern onto the substrate not overlapping the orthographic projection of each active layer of the plurality of transistors onto the substrate.

[0015] In some embodiments, the area of ​​the semiconductor pattern of the photodetector on the substrate is larger than the area of ​​the active layer of the second transistor on the substrate.

[0016] In some embodiments, the at least one first transistor includes a driving transistor, and the aspect ratio of the channel region of the second transistor is smaller than the aspect ratio of the channel region of the driving transistor.

[0017] In some embodiments, the light-emitting substrate includes at least two photodetectors and at least two second transistors coupled to each of the at least two photodetectors. Each of the at least two second transistors further includes a first conductive portion and a second conductive portion located on opposite sides of the active layer and in contact with the active layer, wherein each first conductive portion is an integral pattern, and each second conductive portion is coupled to one of the photodetectors.

[0018] In some embodiments, the at least two second transistors include four second transistors coupled one-to-one with the four photodetectors; the first conductive portion, active layer, and second conductive portion of the four second transistors form a cross pattern.

[0019] In some embodiments, the light-emitting substrate further includes a photoelectric detection signal line, which is coupled to the integral pattern.

[0020] In some embodiments, the light-emitting substrate further includes at least one conductive ring, each of the conductive rings being located on the side of the active layer away from the substrate. For the at least two second transistors, a portion of one of the conductive rings facing the active layer of each second transistor serves as the gate of the second transistor. The orthographic projection of the integral pattern onto the substrate lies within the orthographic projection of the conductive ring onto the substrate.

[0021] In some embodiments, the light-emitting substrate further includes a photoelectric detection control line, which includes two control line segments coupled to a conductive ring, each control line segment forming an obtuse angle with the conductive ring at the coupling position.

[0022] In some embodiments, the light-emitting substrate further includes a data line disposed on the substrate and disposed in the same layer as the third electrode.

[0023] In some embodiments, the light-emitting substrate further includes a gate line disposed on the light-emitting substrate, and the gate line is disposed in the same layer as the auxiliary electrode line.

[0024] In some embodiments, the first electrode in the light-emitting device includes a first sub-electrode, a second sub-electrode, and a third sub-electrode sequentially stacked along a direction away from the substrate. The first sub-electrode is a transparent conductive electrode, the second sub-electrode is a reflective electrode, and the first sub-electrode includes a first portion and a second portion other than the first portion. The first portion is shielded by the third sub-electrode, and the orthographic projection of the second portion onto the substrate overlaps with the orthographic projection of the photodetector onto the substrate.

[0025] In some embodiments, the first sub-electrode is disposed on the same layer as the first connection pattern of the first connection portion; the second sub-electrode is disposed on the same layer as the second connection pattern of the first connection portion; and the third sub-electrode is disposed on the same layer as the third connection pattern of the first connection portion.

[0026] In some embodiments, the fourth electrode in the photodetector is closer to the light-emitting device than the third electrode, and the fourth electrode is a transparent conductive electrode.

[0027] In some embodiments, the light-emitting substrate is a display panel.

[0028] On the other hand, a display device is provided. The display device includes a light-emitting substrate as described in any of the above embodiments.

[0029] In another aspect, a method for fabricating a light-emitting substrate is provided, comprising forming an auxiliary electrode line on a substrate; forming a light-emitting device on the substrate; and forming a photodetector on the substrate. The light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode sequentially stacked along a direction away from the substrate; the photodetector includes a third electrode and a fourth electrode; and the auxiliary electrode line is coupled to the third electrode and also coupled to the second electrode.

[0030] In some embodiments, the method for fabricating the light-emitting substrate further includes forming a first connection portion on the substrate. The fourth electrode in the photodetector is disposed on the side of the second electrode in the light-emitting device close to the substrate, the auxiliary electrode line is disposed on the side of the fourth electrode in the photodetector close to the substrate, the first connection portion is disposed on the side of the auxiliary electrode line away from the substrate, and on the side of the second electrode and the fourth electrode close to the substrate, and the first connection portion is coupled to the second electrode, the fourth electrode, and the auxiliary electrode line.

[0031] In some embodiments, the step of forming the first connection portion on the substrate includes forming a first pattern layer on the substrate, the first pattern layer including a first connection pattern. A conductive thin film covering the first pattern layer is formed on the substrate on which the first pattern layer is formed. A second pattern layer including a third connection pattern is formed on the substrate on which the conductive thin film is formed. The conductive thin film is etched using the second pattern layer as a mask to pattern the conductive thin film into a third pattern layer, the third pattern layer including a second connection pattern, wherein the orthographic projection of the second connection pattern on the substrate is located inside the orthographic projection of the third connection pattern on the substrate. The first connection pattern, the second connection pattern, and the third connection pattern, stacked together, constitute the first connection portion. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0033] Figure 1 This is a top view of a light-emitting substrate according to some embodiments;

[0034] Figure 2 This is a structural diagram of a subpixel unit in a light-emitting substrate according to some embodiments;

[0035] Figure 3 This is a partial top view of a light-emitting substrate according to some embodiments;

[0036] Figure 4A This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0037] Figure 4B This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0038] Figure 5 This is a partial top view of a light-emitting substrate according to some embodiments;

[0039] Figure 6 This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0040] Figure 7 This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0041] Figure 8 This is a structural diagram of the first sub-electrode, the second sub-electrode, and the third sub-electrode in a light-emitting substrate according to some embodiments;

[0042] Figure 9A This is a partial top view of the first patterned layer in a light-emitting substrate according to some embodiments;

[0043] Figure 9B This is a partial top view of the second patterned layer in a light-emitting substrate according to some embodiments;

[0044] Figure 9C This is a partial top view of the third patterned layer in a light-emitting substrate according to some embodiments;

[0045] Figure 10 for Figure 1 The equivalent circuit diagram corresponding to the X section of the middle region;

[0046] Figure 11 for Figure 1 A top view of region X of the light-emitting substrate;

[0047] Figure 12A This is a top view of the fifth patterned layer in a light-emitting substrate according to some embodiments;

[0048] Figure 12B This is a top view of the sixth pattern layer in a light-emitting substrate according to some embodiments;

[0049] Figure 12C This is a top view of the fourth patterned layer in a light-emitting substrate according to some embodiments;

[0050] Figure 12D This is a top view of the seventh pattern layer in a light-emitting substrate according to some embodiments;

[0051] Figure 12E This is a top view of the eighth patterned layer in a light-emitting substrate according to some embodiments;

[0052] Figure 12F This is a top view of the first patterned layer in a light-emitting substrate according to some embodiments;

[0053] Figure 12G This is a top view of the second patterned layer in a light-emitting substrate according to some embodiments;

[0054] Figure 12H This is a top view of a third patterned layer in a light-emitting substrate according to some embodiments;

[0055] Figure 13A This is a top view of a light-emitting substrate in which a fifth pattern layer is superimposed on a sixth pattern layer according to some embodiments;

[0056] Figure 13B This is a top view of a light-emitting substrate in which a fifth pattern layer is superimposed on a seventh pattern layer according to some embodiments;

[0057] Figure 14 This is a flowchart of a method for fabricating a light-emitting substrate according to some embodiments;

[0058] Figures 15A to 15J This is a process flow diagram of a method for fabricating a light-emitting substrate according to some embodiments. Detailed Implementation

[0059] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0060] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0061] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0062] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. Similarly, the term "coupled" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the terms "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0063] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0064] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0065] As used herein, depending on the context, the term “if” may optionally be interpreted as meaning “when”, “in the event of”, “in response to determination”, or “in response to detection”. Similarly, depending on the context, the phrase “if it is determined that…” or “if [the stated condition or event] is detected” may optionally be interpreted as meaning “in the event of determination that…”, “in response to determination that…”, “when [the stated condition or event] is detected”, or “in response to the detection of [the stated condition or event]”.

[0066] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0067] In addition, the use of “based on” or “according to” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” or “according to” one or more of the stated conditions or values ​​may in practice be based on additional conditions or beyond the stated values.

[0068] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0069] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0070] Some embodiments of this disclosure provide a display device. The display device is a product with image display capabilities, such as: a monitor, television, billboard, digital photo frame, laser printer with display capabilities, telephone, mobile phone, personal digital assistant (PDA), digital camera, portable camcorder, viewfinder, navigator, vehicle, large-area wall display, home appliance, information query device (such as business query equipment for e-government, banks, hospitals, power companies, etc., monitors, etc.).

[0071] The display device may include a light-emitting substrate and a control circuit coupled to the light-emitting substrate. The control circuit is configured to drive the light-emitting substrate to emit light and may include, for example, a circuit board or an integrated circuit (IC).

[0072] In some embodiments, the light-emitting substrate can be a display panel configured to display an image. Since the process of displaying an image requires light emission, it can be called a light-emitting substrate. For example, the display panel can emit three primary colors of light (e.g., red, green, and blue), and by adjusting the brightness of the three primary colors of light, the display panel can display a color image. As another example, the display panel can emit three primary colors of light and white light; by adjusting the brightness of the three primary colors of light and the white light, the display panel can display a color image. Yet another example, the display panel can emit only white light; by adjusting the brightness of the white light, the display panel can display a grayscale image. In this case, the display device may further include a color filter disposed on the light-emitting side of the display panel to convert white light into three primary colors of light, thereby realizing the display of a color image.

[0073] Among them, the display panel can be, for example, an OLED (Organic Light Emitting Diode) display panel, a QLED (Quantum Dot Light Emitting Diodes) display panel, or a microLED (including miniLED or microLED, where LED is a light-emitting diode) display panel, etc.

[0074] In other embodiments, the light-emitting substrate can be configured as a light source. For example, the display device is a liquid crystal display device, which includes a liquid crystal display panel and a light-emitting substrate disposed on the back side of the display panel (i.e., the side facing away from the display surface of the display panel). The light-emitting substrate can be used as a backlight source to provide backlighting for the liquid crystal display panel.

[0075] Some embodiments of this disclosure provide a light-emitting substrate. This light-emitting substrate can be applied to the aforementioned display devices, and also to lighting devices such as lamps. This embodiment uses a display panel as an example.

[0076] Figure 1 This is a top view of the light-emitting substrate. (For example...) Figure 1As shown, the light-emitting substrate EP includes at least one (e.g., one; or, for example, multiple) subpixel units P. For example, the light-emitting substrate EP has a display area AA and a peripheral area S located on at least one side of the display area AA, wherein multiple subpixel units P are disposed in the display area AA. The multiple subpixel units P may include various subpixel units with different emission colors, for example, including subpixel units P1, P2, P3, and P4 with different emission colors; wherein the four subpixel units can emit red light, green light, blue light, and white light respectively. For example, subpixel unit P1 can emit red light, subpixel unit P2 can emit green light, subpixel unit P3 can emit blue light, and subpixel unit P4 can emit white light. Alternatively, the multiple subpixel units P may include three subpixel units with different emission colors; wherein the three subpixel units can emit red light, green light, and blue light respectively.

[0077] Figure 2 The structure of a subpixel unit is shown. See also Figure 2 The sub-pixel unit P may include a light-emitting device 200 and a pixel driving circuit E that provides driving current and / or driving voltage to the light-emitting device 200.

[0078] The light-emitting device 200 can be an electroluminescent device, such as an organic electroluminescent device (e.g., OLED), or an inorganic light-emitting device (e.g., LED, microLED). The light-emitting device 200 can also be a QLED.

[0079] Figure 3 This is a partial top view of the light-emitting substrate. It should be noted that... Figure 3 Only the multiple layers in the light-emitting substrate EP used to form a light-emitting device 200 and a photodetector 500 are shown; some other layers in the light-emitting substrate EP are omitted. Figure 4A yes Figure 3 A cross-sectional view of the light-emitting substrate along the BB' section line. Figure 4B yes Figure 3 A cross-sectional view of the light-emitting substrate along the CC' section line.

[0080] See Figure 3 , Figure 4A ,as well as Figure 4B The light-emitting substrate EP may include a substrate 100, a light-emitting device 200, a photodetector 500, and an auxiliary electrode line 20.

[0081] The light-emitting device 200 can be disposed on the substrate 100. The light-emitting device 200 may include a first electrode 210, a light-emitting functional layer 220, and a second electrode 230 sequentially stacked along a direction away from the substrate 100 (e.g., parallel to the x-direction). For example, the first electrode 210 is closer to the substrate 100 than the second electrode 230, and the light-emitting functional layer 230 is located between the first electrode 210 and the second electrode 230 in the thickness direction of the light-emitting device 200 (e.g., parallel to the x-direction). One of the first electrode 210 and the second electrode 230 is a cathode, and the other is an anode.

[0082] The light-emitting functional layer 220 can be a single-layer structure or a multi-layer structure. Exemplarily, the light-emitting functional layer 220 may include a light-emitting layer, and may further include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer located between the anode and the light-emitting layer. It may also further include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer located between the light-emitting layer and the cathode. The light-emitting layer in a light-emitting device can be a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, or a white light-emitting layer.

[0083] In some embodiments, the second electrode 230 can be a cathode. When the light-emitting device 200 is a top-emitting device, the second electrode 230 can be transparent or translucent to allow light emitted from the light-emitting functional layer 220 to pass through the second electrode 230 and exit. The material of the second electrode 230 can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO); the material of the second electrode 230 can also be a metal, such as an alloy. In this case, the first electrode 210 can be an anode.

[0084] In other embodiments, the first electrode 210 may be a cathode and the second electrode 230 may be an anode.

[0085] The sheet resistance of the second electrode 230 in the light-emitting device 200 may be relatively high. Taking a top-emitting OLED display panel as an example, the second electrode 230 can be a transparent cathode, and its material can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). When the light-emitting substrate includes multiple light-emitting devices 200, the cathodes of each light-emitting device 200 can contact each other to form an integrated electrode layer. However, due to the properties of the material itself, the resistance of the transparent cathode electrode layer is relatively high, resulting in an IR voltage drop problem in large-size OLED display panels, which affects the light emission and / or display effect of the OLED display panel.

[0086] To solve this problem, see Figure 4AThe light-emitting substrate may include at least one auxiliary electrode line 20. The auxiliary electrode line 20 may be disposed on the substrate 100. Specifically, the auxiliary electrode line 20 may be disposed on the side of the second electrode 230 of the light-emitting device near the substrate 100. The auxiliary electrode line 20 may be coupled to the second electrode 230 of the light-emitting device. Exemplarily, each auxiliary electrode line is coupled to the second electrodes of at least two light-emitting devices (e.g., electrode layers constituting the second electrodes of each light-emitting device), in which case at least a portion of the auxiliary electrode lines are connected in parallel with the electrode layers. Compared to a second electrode without auxiliary electrode lines, a second electrode coupled with auxiliary electrode lines can reduce its sheet resistance, thereby obtaining better light emission and / or display effects.

[0087] The following will describe how an auxiliary electrode line is coupled to the second electrode of a light-emitting device.

[0088] The light-emitting substrate EP provided in this embodiment may further include a first connecting portion 400. The first connecting portion 400 may be disposed on the substrate 100. Specifically, the first connecting portion 400 may be disposed on the side of the auxiliary signal line 20 away from the substrate 100, and on the side of the second electrode 230 in the light-emitting device close to the substrate 100. Exemplarily, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the first connecting portion 400 may be disposed between the second electrode 230 and the auxiliary electrode line 20.

[0089] The relative position of the light-emitting device and the first connecting part 400 can be as follows: Figure 3 As shown (wherein, the position of the light-emitting device can be the same as the position of the first electrode 210 in the light-emitting device). In the light-emitting substrate EP, the second electrodes 230 of multiple light-emitting devices can be disposed on the same layer. Exemplarily, in the fabrication process of the light-emitting substrate EP, the second electrodes 230 of multiple light-emitting devices can be fabricated in a whole layer using a sputtering process. In this case, the second electrode 230 of one light-emitting device can extend to the first connection portion 400.

[0090] In some possible implementations, the light-emitting substrate EP further includes a first insulating layer 300. The first insulating layer 300 may be disposed on the substrate. Specifically, the first insulating layer 300 may be disposed on the side of the first connection portion 400 away from the substrate 100. The first insulating layer 300 may also be disposed on the side of the second electrode 230 of the light-emitting device close to the substrate 100. That is, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the first insulating layer 300 may be located between the first connection portion 400 and the second electrode 230 of the light-emitting device.

[0091] The first insulating layer 300 includes a first opening 330. The first opening 330 exposes at least a portion of the first connection portion 400, and the second electrode 230 of the light-emitting device can extend into the first opening 330, i.e., extend to the first connection portion 400. At this time, the first connection portion 400 can contact the second electrode 230 in the first opening 330. Furthermore, the first connection portion 400 can also be coupled to the auxiliary electrode line 20, such that the second electrode 230 and the auxiliary electrode line 20 are coupled through the first connection portion 400.

[0092] The coupling method between the first connecting part 400 and the second electrode 230 will be described below.

[0093] The first connection portion 400 includes a first connection pattern 410, a second connection pattern 420, and a third connection pattern 430 sequentially stacked in a direction away from the substrate 100 (e.g., the x-direction). For example, among the first connection pattern 410, the second connection pattern 420, and the third connection pattern 430, the first connection pattern 410 is closest to the substrate 100, the third connection pattern 430 is furthest from the substrate 100, and the second connection pattern 420 is located between the first connection pattern 410 and the third connection pattern 430 in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction).

[0094] The orthographic projection of the second connection pattern 420 on the substrate 100 lies inside the orthographic projection of the third connection pattern 430 on the substrate 100. In this case, the positions of these two orthographic projections can be one of the following two situations:

[0095] First, see Figure 4A An annular gap can be formed between the edges of the orthographic projections of the second connecting pattern 420 and the third connecting pattern 430 on the substrate 100, thereby forming... Figure 3 The second connecting pattern 420 has all its edges recessed inward compared to the third connecting pattern 430. In this case, in the first connecting portion 400, in the pattern extension direction (e.g., parallel to the y-direction), the entire edge of the second connecting pattern 420 can be recessed inward compared to the edge of the third connecting pattern 430, that is, the entire edge of the third connecting pattern 430 can protrude from the second connecting pattern 420.

[0096] Secondly, see Figure 4BIn the first connection portion 400, a portion of the edge of the orthographic projection of the second connection pattern 420 onto the substrate 100 may overlap with a portion of the edge of the orthographic projection of the third connection pattern 430 onto the substrate 100; another portion is recessed inward relative to the edge of the orthographic projection of the third connection pattern 430 onto the substrate 100. In this case, in the first connection portion 400, in the pattern extension direction (e.g., parallel to the y-direction), a portion of the edge of the second connection pattern 420 may be recessed inward relative to the edge of the third connection pattern 430, that is, a portion of the edge of the third connection pattern 430 may protrude from the second connection pattern 420.

[0097] It should be noted that, in this document, when discussing the orthographic projection of a pattern (e.g., a first conductive pattern, a second conductive pattern) onto the substrate, the thickness of the pattern can be ignored. That is, the orthographic projection of the pattern onto the substrate can be the orthographic projection of the upper surface of the pattern (i.e., the side of the pattern away from the substrate) onto the substrate, or it can be the orthographic projection of the lower surface of the pattern (i.e., the side of the pattern closer to the substrate) onto the substrate. For example, the orthographic projection of the pattern onto the substrate can be the orthographic projection of the larger of the upper and lower surfaces of the pattern onto the substrate.

[0098] The orthographic projection of the second connecting pattern 420 on the substrate 100 can also be located inside the orthographic projection of the first connecting pattern 410 on the substrate 100. In this case, the positional relationship between these two orthographic projections can be one of the following two situations:

[0099] First, see Figure 4A An annular gap can be formed between the edges of the orthographic projection of the second connecting pattern 420 on the substrate 100 and the orthographic projection of the first connecting pattern 410 on the substrate 100, thereby forming Figure 3 The second connecting pattern 420 has all its edges recessed inwards compared to the first connecting pattern 410. In this case, in the first connecting portion 400, in the pattern extension direction (e.g., parallel to the y-direction), the entire edge of the second connecting pattern 420 can be recessed inwards compared to the edge of the first connecting pattern 410; that is, the entire edge of the first connecting pattern 410 can protrude beyond the second connecting pattern 420. As described above, the entire edge of the third connecting pattern 430 can also protrude beyond the second connecting pattern 420. In this case, a structure can be formed... Figure 4A The first connecting part 400 has an "I" shaped cross section.

[0100] Secondly, see Figure 4BIn the first connection portion 400, a portion of the edge of the orthographic projection of the second connection pattern 420 onto the substrate 100 may overlap with a portion of the edge of the orthographic projection of the first connection pattern 410 onto the substrate 100; another portion is recessed inward relative to the edge of the orthographic projection of the first connection pattern 410 onto the substrate 100. In this case, in the first connection portion 400, in the extension direction of the pattern (e.g., parallel to the y-direction), a portion of the edge of the second connection pattern 420 may be recessed inward relative to the edge of the first connection pattern 410, that is, a portion of the edge of the first connection pattern 410 may protrude from the second connection pattern 420.

[0101] Based on this, the first opening 330 of the first insulating layer 300 can expose at least a portion of the first connection pattern 410, at least a portion of the second connection pattern 420, and at least a portion of the third connection pattern 430. For example, Figure 3 The positional relationship between the orthographic projection of the lower edge 330a of the first opening 330 on the substrate 100 and the orthographic projections of the first connection pattern 410, the second connection pattern 420, and the third connection pattern 430 of the first connection portion 400 on the substrate 100 is shown.

[0102] In this case, the lower edge of the opening can be the edge of the opening closest to the substrate, and correspondingly, the upper edge of the opening can be the edge of the opening furthest from the substrate. See also Figure 4A For example, the lower edge 330a of the first opening 330 may be the edge of the first opening 330 near the substrate 100.

[0103] Based on this, the orthographic projection of the second connecting pattern 420 on the substrate 100 and the orthographic projection of the third connecting pattern 430 on the substrate 100 can be located inside the orthographic projection of the lower edge 330a of the third opening 330 on the substrate 100. In this case, there can be an annular gap between the edges of the orthographic projection of the second connecting pattern 420 on the substrate 100 and the orthographic projection of the lower edge 330a of the third opening 330 on the substrate 100, and also an annular gap between the edges of the orthographic projection of the third connecting pattern 430 on the substrate 100 and the orthographic projection of the lower edge 330a of the third opening 330 on the substrate 100. At this time, a gap m can exist between the sidewall 330b of the first opening 330 and the side surface 430' of the third connecting pattern 430 of the first connecting portion 400, allowing the third opening 330 to expose the side surface 430' of the third connecting pattern 430, and further, also exposing the side surface 420' of the second connecting pattern 420. Furthermore, since the first connecting pattern 410 may include a portion that protrudes from the second connecting pattern 420 and is covered by the third connecting pattern 430, the third opening 330 may also expose a portion 410' of the upper surface of the first connecting pattern 410.

[0104] Since the first insulating layer 300 has a first opening 330, when the light-emitting functional layer 220 is subsequently fabricated on the substrate 100 with the first insulating layer 300 after the first insulating layer 300 is fabricated (e.g., by vapor deposition), the light-emitting functional layer 220 can also extend into the first opening 330.

[0105] As explained above, in the first connecting portion 400, since the orthographic projection of the second connecting pattern 420 on the substrate 100 is located inside the orthographic projection of the third connecting pattern 430 on the substrate 100, the edge of the third connecting pattern 430 can protrude beyond the second connecting pattern 420 in the pattern extension direction (e.g., parallel to the y-direction). At this time, when a light-emitting functional layer 220 is formed thereon (e.g., formed using a vapor deposition process), the portion of the light-emitting functional layer 220 located in the first opening 330 can be discontinuous; for example, the light-emitting functional layer 220 can be discontinuous in region K. This ensures that at least a portion of the first connecting portion 400 (e.g., the side surface 430' of the third connecting portion 430 and the side surface 420' of the second connecting portion 420) is not covered by the light-emitting functional layer 220. Thus, during the subsequent fabrication of the second electrode 230, for example, by using a sputtering process, the second electrode 230 can extend into the first opening 330, and the portion of the second electrode 230 located in the first opening 330 can contact at least one of the first connection pattern 410, the second connection pattern 420, and the third connection pattern 430 in the first connection portion 400. For example, the second electrode 230 can contact the side surface 420' of the second connection pattern 420, and the second electrode 230 can also contact the side surface 430' of the third connection pattern 430. In this way, coupling between the second electrode 230 and the first connection portion 400 is achieved.

[0106] Furthermore, as described above, since the orthographic projection of the second connecting pattern 420 on the substrate 100 can be located inside the orthographic projection of the first connecting pattern 410 on the substrate 100, the first connecting pattern 410 can protrude from the second connecting pattern in the pattern extension direction (e.g., parallel to the y-direction), so that the first connecting portion 400 can have an "I"-shaped cross-section. For example, in region K, in the first connecting portion 400, the second connecting pattern 420 is recessed in the pattern extension direction (e.g., parallel to the y-direction) compared to the first connecting pattern 410 and the third connecting pattern 430, forming a first connecting portion 400 with an "I"-shaped cross-section. Since the upper surface of the first connecting pattern 410 includes a portion 410' that protrudes from the second connecting pattern 420 and is obscured by the third connecting pattern 430, when fabricating the light-emitting functional layer 220, the portion 410' of the upper surface of the first connecting pattern 410 may not be covered by the light-emitting functional layer 220. When subsequently fabricating the second electrode 230 (e.g., using a sputtering process), the portion of the second electrode 230 located in the first opening 330 can at least contact the first connecting pattern 410, for example, contact the portion 410' of the upper surface of the first connecting pattern 410. Thus, compared to the second electrode 230 only contacting the sidewalls 420' of the second connecting pattern 420 and / or the sidewalls 430' of the third connecting pattern 430, the contact area between the second electrode 230 and the first connecting portion 400 can be increased, thereby improving product yield.

[0107] Furthermore, the coupling method between the first connecting part and the auxiliary electrode line will be described below.

[0108] The light-emitting substrate EP provided in this embodiment may further include a second connecting portion 10. The second connecting portion 10 is disposed on the substrate 100, and is disposed on the side of the first connecting portion 400 near the substrate 100 and on the side of the auxiliary electrode line 20 away from the substrate 100. Exemplarily, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the second connecting portion 10 may be located between the first connecting portion 400 and the auxiliary electrode line 20.

[0109] The second connecting portion 10 can be configured to contact the first connecting portion 400 and the auxiliary electrode line 20, thereby achieving coupling between the first connecting portion 400 and the auxiliary electrode line 20 through the second connecting portion 10. The contact method between the first connecting portion 400 and the second connecting portion 10 will be described below.

[0110] In some embodiments, the light-emitting substrate EP may further include a second insulating layer 700 and a third insulating layer 800. The second insulating layer 700 and the third insulating layer 800 are sequentially stacked on the substrate 100 in a direction away from the substrate 100 (e.g., the x-direction). Exemplarily, the second insulating layer 700 is closer to the substrate 100 than the third insulating layer 800. Furthermore, both the second insulating layer 700 and the third insulating layer 800 may be located on the side of the first connecting portion 400 closest to the substrate 100 and on the side of the second connecting portion 10 furthest from the substrate 100. Exemplarily, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the second insulating layer 700 and the third insulating layer 800 are located between the first connecting portion 400 and the second connecting portion 10. For example, the first connecting portion 400 is located on the side of the third insulating layer 800 furthest from the substrate 100, and the second connecting portion 10 is located on the side of the second insulating layer 700 closest to the substrate 100.

[0111] The second insulating layer 700 includes a third opening 710, and the third insulating layer 800 includes a fourth opening 810. The orthographic projection of the upper edge 710a of the third opening 710 onto the substrate 100 is located inside the orthographic projection of the lower edge of the fourth opening 810 onto the substrate 100, and the orthographic projection of the upper edge 710a of the third opening 710 onto the substrate 100 overlaps with the orthographic projection of the second connecting portion 10 onto the substrate 100.

[0112] It should be noted that the upper edge 710a of the third opening 710 can be the edge of the third opening 710 away from the substrate 100, and the lower edge 810a of the fourth opening 810 can be the edge of the fourth opening 810 close to the substrate 100. Refer to the explanation of the opening edges above; it will not be repeated here.

[0113] Since the third opening 710 and the fourth opening 810 have the above-described structure, the first connecting portion 400 disposed on the side of the third insulating layer 800 away from the substrate 100 can contact the second connecting portion 10 disposed on the side of the second insulating layer 700 close to the substrate 100 through the fourth opening 810 and the third opening 710. That is, direct contact between the first connecting portion 400 and the second connecting portion 10 is achieved.

[0114] Furthermore, since the size of the upper edge 710a of the third opening 710 is smaller than the size of the lower edge 810a of the fourth opening 810, it is easier to control the positional accuracy of the openings when manufacturing the third opening 710a and the fourth opening 810.

[0115] The connection method between the second connecting part 10 and the auxiliary electrode line 20 will be described below.

[0116] In some embodiments, a fourth insulating layer 900 may be provided between the second connecting portion 10 and the auxiliary electrode line 20 in the thickness direction (e.g., parallel to the y-direction) of the light-emitting substrate EP. The fourth insulating layer 900 may be an interlayer dielectric layer. The fourth insulating layer 900 may include a seventh opening 910. The orthographic projection of the lower edge 910a of the seventh opening 910 onto the substrate 100 overlaps with the orthographic projection of the second connecting portion 10 onto the substrate 100, and the orthographic projection of the lower edge 910a of the seventh opening 910 onto the substrate 100 also overlaps with the orthographic projection of the auxiliary electrode line 20 onto the substrate 100. In this way, the second connecting portion 10 can directly contact the auxiliary electrode line 20 through the seventh opening 910 on the fourth insulating layer 900.

[0117] See also some possible implementations. Figure 5 The orthographic projection of the lower edge 910a of the seventh opening onto the substrate can be made to not overlap with the orthographic projection of the lower edge 810a of the fourth opening onto the substrate. At this time, the second connecting portion 10 can extend into the seventh opening, so that the second connecting portion 10 is coupled to the auxiliary electrode line 20 through the seventh opening.

[0118] Based on the above description, the second connecting part 10 can be coupled to the auxiliary electrode line 20, and the second connecting part 10 can also be coupled to the first connecting part 400. In this way, the coupling between the auxiliary electrode line 20 and the first connecting part 400 is achieved.

[0119] See Figure 3 and Figure 6 A photodetector 500 is disposed on the substrate 100 and configured to detect light emitted by the light-emitting device 200. Specifically, the photodetector 500 may be disposed on the side of the first electrode 210 of the light-emitting device 200 away from the light-emitting functional layer 220. Exemplarily, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the photodetector 500 is located between the first electrode 210 of the light-emitting device 200 and the substrate 100. Exemplarily, one photodetector 500 may be configured to detect light emitted by one light-emitting device; and exemplaryly, one photodetector 500 may be configured to detect light emitted by multiple light-emitting devices.

[0120] This disclosure does not impose any particular limitation on the specific type of the photodetector 500, as long as it can detect the intensity of light emitted by the light-emitting device and generate a detection signal to achieve optical compensation for the light-emitting device 200. For example, the photodetector 500 can be a PIN photodiode.

[0121] The photodetector 500 may include a third electrode 510 and a fourth electrode 530. The photodetector 500 may also include a semiconductor pattern 520.

[0122] In some embodiments, the semiconductor pattern 520 of the photodetector 500 may include an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer. The intrinsic semiconductor layer may be lightly doped to give the photodetector 500 better photosensitivity.

[0123] To ensure the proper functioning of the photodetector 500, an electrical signal can be transmitted to its fourth electrode 530. When the photodetector 500 is illuminated, the resistance of its semiconductor pattern 520 changes. The resistance change varies depending on the intensity of the illumination, allowing the intensity of the illumination received by the photodetector 500 to be detected based on the magnitude of the electrical signal transmitted from its third electrode 510. Therefore, the fourth electrode 530 of the photodetector 500 can be coupled to a signal line to transmit an electrical signal.

[0124] In some embodiments, the fourth electrode 530 of the photodetector 500 can be coupled to an auxiliary electrode line. As described above, the auxiliary electrode line can also be coupled to the second electrode of the light-emitting device. In this way, the auxiliary electrode line can serve as both an auxiliary electrode for the second electrode in the light-emitting device and a means of providing an electrical signal to the photodetector 500. Compared to using a separate signal line to provide an electrical signal to the photodetector 500, this arrangement saves one signal line.

[0125] In some embodiments, the fourth electrode 530 can be coupled to the auxiliary electrode line via the first connection portion 400. The first connection portion 400 can be coupled to the auxiliary electrode line and the second electrode of the light-emitting device as described above. The coupling method between the first connection portion 400 and the fourth electrode 530 of the photodetector 500 will be described below.

[0126] The positional relationship between the fourth electrode 530, the auxiliary electrode line, and the first connecting part 400 is as follows:

[0127] The fourth electrode 530 can be disposed on the side of the second electrode 230 in the light-emitting device 200 near the substrate 100, and the auxiliary electrode line can be disposed on the side of the fourth electrode 530 in the photodetector 500 near the substrate 100. For example, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the fourth electrode 530 of the photodetector 500 can be located between the second electrode 230 of the light-emitting device 200 and the auxiliary electrode line. Furthermore, as described above, the first connection portion 400 can be disposed on the side of the auxiliary electrode line away from the substrate 100, and on the side of the second electrode 230 of the light-emitting device near the substrate. For example, the first connection portion 400 can be disposed on the side of the fourth electrode 530 away from the substrate 100, that is, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the first connection portion 400 can be disposed between the fourth electrode 530 and the substrate 100.

[0128] The positional relationship between the photodetector 500, the first connecting portion 400, and the light-emitting device (where the light-emitting device can be located at the position of the first electrode 210 of the light-emitting device) can be as follows: Figure 3 As shown. Figure 7 yes Figure 3 A cross-sectional view of the light-emitting substrate along the DD' section line. See also... Figure 3 and Figure 7 The light-emitting substrate EP may further include a second insulating layer 700 and a third insulating layer 800. The positions of the second insulating layer 700 and the third insulating layer 800 in the light-emitting substrate EP may be as described above. Furthermore, the second insulating layer 700 and the third insulating layer 800 may be located on the side of the first connection pattern 410 in the first connection portion 400 near the substrate 100, and on the side of the fourth electrode 530 away from the substrate 100. For example, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the second insulating layer 700 and the third insulating layer 800 are located between the first connection pattern 410 of the first connection portion 400 and the fourth electrode 530 of the photodetector 500. For example, the first connection pattern 410 in the first connection portion 400 is located on the side of the third insulating layer 800 away from the substrate, and the fourth electrode 530 is located on the side of the second insulating layer 700 near the substrate 100.

[0129] The second insulating layer 700 may further include a fifth opening 720, and the third insulating layer 800 may further include a sixth opening 820. The orthographic projection of the upper edge 720a of the fifth opening 720 onto the substrate 100 is located inside the orthographic projection of the lower edge 820a of the sixth opening 820 onto the substrate 100, and the orthographic projection of the upper edge 720a of the fifth opening 720 onto the substrate 100 overlaps with the orthographic projection of the fourth electrode 530 onto the substrate 100.

[0130] It should be noted that the upper edge 720a of the fifth opening 720 is the edge of the fifth opening 720 away from the substrate 100, and the lower edge 820a of the sixth opening 820 is the edge of the sixth opening 820 close to the substrate 100. Please refer to the above explanation of the upper and lower edges of the openings; it will not be repeated here.

[0131] Because the second insulating layer 700 and the third insulating layer 800 have the above-described structures, the first connecting portion 400 disposed on the side of the third insulating layer 800 away from the substrate 100 can directly contact the fourth electrode 530 disposed on the side of the second insulating layer 700 near the substrate 100 through the fifth opening 720 and the sixth opening 820. Based on the above description, in the first connecting portion 400, the first connecting pattern 410 is closest to the substrate 100. Therefore, in some embodiments, the orthographic projection of the first connecting pattern 410 on the substrate 100 can overlap with the orthographic projection of the upper edge 720a of the fifth opening 720 on the substrate 100, and also overlap with the orthographic projection of the lower edge 820a of the sixth opening 820 on the substrate 100. In this way, the first connecting pattern 410 can contact the fourth electrode 530 through the fifth opening 720 and the sixth opening 820, thereby achieving coupling between the first connecting portion 400 and the fourth electrode 530.

[0132] In some embodiments, see Figure 3 and Figure 6The first insulating layer 300 may further include a second opening. One light-emitting device 200 may correspond to one second opening, or one light-emitting device 200 may correspond to two second openings; for example, the light-emitting device 200 may correspond to a second opening 310 and a second opening 320. Specifically, the orthographic projection of the lower edge of the second opening onto the substrate 100 may be located inside the orthographic projection of the first electrode 210 onto the substrate 100. For example, the orthographic projection of the lower edge 310a of the second opening 310 onto the substrate 100 may be located inside the orthographic projection of the first electrode 210 onto the substrate 100, and the orthographic projection of the lower edge 320a of the second opening 320 onto the substrate 100 may be located inside the orthographic projection of the first electrode 210 onto the substrate 100. In this way, the portion of the light-emitting functional layer 220 located in the second opening can contact the first electrode 210 and emit light under the drive of the first electrode 210, thereby enabling the corresponding light-emitting device 200 to emit light. For example, the portion of the light-emitting functional layer 220 located in the second opening 310 can contact the first electrode 210, and the portion of the light-emitting functional layer 220 located in the second opening 320 can also contact the first electrode 210, so that both portions of the light-emitting functional layer 220 located in the second opening 310 and the second opening 320 can emit light under the drive of the first electrode 210. In this way, it is also possible for the portions of the light-emitting functional layer 220 located in the second opening 310 and the second opening 320 to emit light and turn off simultaneously.

[0133] In some embodiments, the first electrode 210 in the light-emitting device 200 may include a first sub-electrode 212, a second sub-electrode 211, and a third sub-electrode 213 sequentially stacked along a direction away from the substrate 100 (i.e., the x-direction). For example, in the thickness direction of the light-emitting substrate EP (e.g., parallel to the x-direction), the second sub-electrode 211 may be located between the first sub-electrode 212 and the third sub-electrode 213.

[0134] The first sub-electrode 212 can be a transparent conductive electrode, and its material can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The second sub-electrode 211 can be a reflective electrode, allowing the first electrode 210 to reflect light; its material can be a metal, such as Al. For example, when the light-emitting device 200 is a top-emitting device, a portion of the light emitted by its light-emitting functional layer 220 is directly emitted from the second electrode 230 side. A portion of the light emitted by the light-emitting functional layer 220 towards the first electrode 210 can be reflected by the second sub-electrode 211, allowing it to also be emitted from the second electrode 230 side, thus increasing the light extraction amount. The third sub-electrode 213 can include a material with a high work function; for example, the material of the third sub-electrode 213 can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In this case, the third sub-electrode 213 in the first electrode 210 of the light-emitting device 200 can be configured to contact the light-emitting functional layer 220 and inject holes into the light-emitting functional layer 220. Since the third sub-electrode 213 comprises a material with a high work function, the first electrode 210 is more likely to inject holes into the light-emitting functional layer 220.

[0135] See Figure 8 The first sub-electrode 212 may include a first portion 212a and a second portion 212b other than the first portion 212a. The first portion 212a is blocked by the third sub-electrode 213. That is, the portion of the first sub-electrode 212 that overlaps with the orthographic projection of the third sub-electrode 213 on the first sub-electrode 212 is called the first portion 212a of the first sub-electrode 212.

[0136] See Figure 6The second portion 212b of the first sub-electrode 212 is not obscured by the third sub-electrode 213, and the orthographic projection of the second portion 212b of the first sub-electrode 212 on the substrate 100 overlaps with the orthographic projection of the photodetector 500 on the substrate 100. Thus, the photodetector 500 can detect the light emitted by the light-emitting device 200 using the second portion 212b of the first sub-electrode 212. For example, in the first insulating layer, the orthographic projection of the lower edge 320a of the second opening 320 on the substrate 100 is located inside the orthographic projection of the second portion 212b of the first sub-electrode 212 on the substrate 100, such that at least a portion of the second portion 212b of the first sub-electrode 212 can be exposed by the second opening 320. The light-emitting functional layer 220 can also extend to the second portion 212b of the first sub-electrode 212 located in the second opening 320, so that in the light-emitting device 200, the portions corresponding to the first portion 212a and the second portion 212b of the first sub-electrode 212 can be turned on and off simultaneously. Furthermore, the second portion 212b of the first sub-electrode 212 can be configured to be light-transmitting. For example, the second portion 212b of the first sub-electrode 212 can be transparent or semi-transparent, allowing the light emitted by the light-emitting device 200 to directly pass through the second portion 212b of the first sub-electrode 212 and illuminate the light detection device 500 below it. Alternatively, the second portion 212b of the first sub-electrode 212 can have an opening, allowing the light emitted by the light-emitting device 200 to pass through the opening and illuminate the light detection device 500 below it. In this way, the light detection device 500 can detect the light emitted by the light-emitting device 200. Furthermore, in the light-emitting device 200, since the portion covered by the first insulating layer 300 cannot emit light, the size of the light-emitting area that the light-emitting device 500 can detect can be defined by the second opening 320. That is, most of the light illuminating the light-emitting device 500 comes from the second opening 320. In this way, the source of light detected by the light-emitting device 500 can be more concentrated, which can further improve the accuracy of the light-emitting device 500.

[0137] In some embodiments, the fourth electrode 530 of the photodetector 500 is closer to the light-emitting device than the third electrode 510, and the fourth electrode 530 is a transparent conductive electrode, the material of which can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In this way, the light emitted by the light-emitting device can be irradiated onto the semiconductor pattern 520 of the photodetector 500 through the transparent fourth electrode 530, so that the photodetector 500 can detect the light emitted by the light-emitting device.

[0138] In some embodiments, each layer of the first electrode 210 and each layer of the first connection portion 400 may be disposed on the same layer. Figure 9AThis is a partial top view of the first patterned layer in the light-emitting substrate; Figure 9B This is a partial top view of the second patterned layer in the light-emitting substrate; Figure 9C This is a partial top view of the third patterned layer in the light-emitting substrate. See also... Figure 9A The first pattern layer 1 includes: a first connecting pattern 410 of the first connecting portion and a first sub-electrode 212 of the light-emitting device; that is, the first connecting pattern 410 in the first connecting portion and the first sub-electrode 212 of the light-emitting device can be disposed in the same layer. See also Figure 9B The second pattern layer 2 includes: a second connecting pattern 420 in the first connecting portion and a second sub-electrode 211 of the light-emitting device; that is, the second connecting pattern 420 in the first connecting portion and the second sub-electrode 211 of the light-emitting device can be disposed in the same layer. See also Figure 9C The third pattern layer 3 includes: the third connecting pattern 430 in the first connecting portion and the third sub-electrode 213 of the light-emitting device; that is, the third connecting pattern 430 in the first connecting portion and the third sub-electrode 213 of the light-emitting device can be disposed in the same layer.

[0139] Each of the aforementioned patterned layers refers to a layer structure obtained by patterning (i.e., patterning process) a thin film. In some embodiments, the fabrication method of the first patterned layer 1, the second patterned layer 2, and the third patterned layer 3 may be as follows: forming the first patterned layer 1 on a substrate. Forming a conductive thin film, such as an Al thin film, covering the first patterned layer 1 on the substrate on which the first patterned layer 1 is formed. Forming the third patterned layer 3 on the substrate on which the conductive thin film is formed, and etching the conductive thin film using the third patterned layer 3 as a mask to pattern the conductive thin film into the second patterned layer 2. The materials of the first patterned layer 1 and the third patterned layer 3 may be transparent conductive materials, such as ITO or IZO. Thus, by selecting one etching solution for the first patterned layer 1 and / or the third patterned layer 3, and using a different etching solution to etch the second patterned layer 2, the first patterned layer 1 and the third patterned layer 3 will not be etched away when etching the second patterned layer 2.

[0140] In some embodiments, the light-emitting substrate may further include multiple transistors. The transistors may be thin-film transistors. See also... Figure 4A and Figure 6 Multiple transistors can be disposed on the substrate, specifically in the circuit layer CL.

[0141] Figure 10 yes Figure 1 The equivalent circuit diagram corresponding to region X in the middle section. See [link / reference]. Figure 10A subpixel unit may include a light-emitting device, a pixel driving circuit coupled to the light-emitting device for driving the light-emitting device to emit light, and a light-detecting device, as well as a control circuit coupled to the light-detecting device. The pixel driving circuit and the control circuit may include multiple transistors. Specifically, the pixel driving circuit may include at least one first transistor coupled to the light-emitting device, and the control circuit may include a second transistor coupled to the light-detecting device. For example, taking subpixel unit P1 as an example, the multiple transistors in subpixel unit P1 may include a first transistor T11 and a first transistor T12 coupled to the light-emitting device 200a, and a second transistor T13 coupled to the light-detecting device 500a. The first transistors T11 and T12 may be disposed in the pixel driving circuit, which drives the light-emitting device 200a to emit light. The second transistor T13 may be disposed in the control circuit of the light-detecting device 500a.

[0142] A transistor may include an active layer, a first conductive portion and a second conductive portion located on opposite sides of the active layer and in contact with the active layer, and a gate. See also Figure 6 In order to form a transistor, the circuit layer CL may include a gate insulating layer GL.

[0143] In some embodiments, the first conductive portion can be the drain region of a transistor, and correspondingly, the second conductive portion can be the source region of a transistor. In other embodiments, the first conductive portion can be the source region of a transistor, and correspondingly, the second conductive portion can be the drain region of a transistor.

[0144] To further explain the structure of transistors in the light-emitting substrate Figure 11 yes Figure 1 A top view of region X of the light-emitting substrate. See also Figure 11 The light-emitting substrate EP can have a stacked structure, for example, it can include a fifth pattern layer 5, a sixth pattern layer 6, a fourth pattern layer 4, a seventh pattern layer 7, an eighth pattern layer 8, a first pattern layer 1, a second pattern layer 2, and a third pattern layer 3. The stacking order of each pattern layer can be as follows: along the direction away from the substrate, the fifth pattern layer 5, the sixth pattern layer 6, the fourth pattern layer 4, the seventh pattern layer 7, the eighth pattern layer 8, the first pattern layer 1, the second pattern layer 2, and the third pattern layer 3 are arranged sequentially. Figure 12A This is a top view of the fifth pattern layer 5. Figure 12B This is a top view of the sixth pattern layer 6. Figure 12C This is a top view of the fourth pattern layer 4. Figure 12D This is a top view of the seventh pattern layer 7. Figure 12E This is a top view of the eighth pattern layer 8. Figure 12F This is a top view of the first pattern layer 1. Figure 12G This is a top view of the second pattern layer 2. Figure 12H This is a top view of the third pattern layer 3. It should be noted that the second pattern layer 2 and the third pattern layer 3 can have approximately the same shape and size. Figure 11 In the image, only the second pattern layer 2 is shown, while the third pattern layer 3 is omitted.

[0145] Figure 13A This is a top view of the fifth pattern layer overlaid with the sixth pattern layer. See also... Figure 10 and Figure 13A Taking subpixel unit P1 as an example (the structures of subpixel units P2, P3, and P4 are similar to those of subpixel unit P1 and will not be described in detail here), the first transistor T11 may include an active layer T11a, a first conductive portion T11d, a second conductive portion T11s, and a gate T11g. The first transistor T12 may include an active layer T12a, a first conductive portion T12d, a second conductive portion T12s, and a gate T12g. The second transistor T13 may include an active layer T13a, a first conductive portion T13d, a second conductive portion T13s, and a gate T13g. The active layer T11a, the first conductive portion T11d, the second conductive portion T11s, the active layer T12a, the first conductive portion T12d, the second conductive portion T12s, the active layer T13a, the first conductive portion T13d, and the second conductive portion T13s may be disposed in the fifth pattern layer 5. Gates T11g, T12g, and T13g can be disposed in the sixth pattern layer 6.

[0146] In some embodiments, the first transistor includes a driving transistor. For example, see [link to example]. Figure 10 , Figure 12C ,as well as Figure 13A Taking the sub-pixel unit P1 as an example, the pixel driving circuit in the sub-pixel unit P1 can be a 2T1C structure, including two transistors (transistor T11 and transistor T12) and a capacitor C1. The two plates of capacitor C1 can be... Figure 12C C1b and Figure 13A In the first transistor T12s, and through the transition pattern 90a, the plate C1b of capacitor C1 can be coupled to the light-emitting device 200a. In the first transistor T11 and the first transistor T12, the first transistor T12 can be a driving transistor, which can be coupled to the light-emitting device to control the magnitude of the current flowing through the light-emitting device.

[0147] Based on this, the aspect ratio of the channel region of the second transistor (e.g., the second transistor T13) is smaller than that of the driving transistor (e.g., the first transistor T12). The channel region can be located between the first conductive portion and the second conductive portion of the transistor. When the transistor is turned on, the channel region can form a conductive channel. For example, the channel region can be the active layer of the transistor. Accordingly, the effective length of the channel region can be the extension length in the active layer from the boundary connecting the active layer and the first conductive portion to the boundary connecting the active layer and the second conductive portion. Since the aspect ratio of the channel region of the second transistor (e.g., the second transistor T13) is smaller than that of the driving transistor (e.g., the first transistor T12), the second transistor can have a smaller threshold voltage, which can improve the accuracy of each photodetector 500.

[0148] In some embodiments, the length direction of the channel region of the second transistor (e.g., the second transistor T13) is not parallel to the length direction of the channel region of each first transistor (e.g., the first transistor T11, the first transistor T12). The length direction of the channel region can be parallel to the direction of the effective length of the channel region, which can be an extension direction from the boundary connecting the active layer and the first conductive portion to the boundary connecting the active layer and the second conductive portion. Because the length direction of the channel region of the second transistor (e.g., the second transistor T13) is not parallel to the length direction of the channel region of each first transistor (e.g., the first transistor T11, the first transistor T12), the structure of the light-emitting substrate can have greater irregularity. This reduces the diffraction effect of light in the light-emitting substrate, thereby reducing the impact of light diffraction on the display effect of the light-emitting substrate.

[0149] In some embodiments, the active layer of the transistor may be located on the side of the photodetector closer to the substrate. Exemplarily, the active layer may be located between the photodetector and the substrate in the thickness direction of the light-emitting substrate. See, for example, [link to relevant documentation]. Figure 10 , Figure 12A and Figure 12D The fifth pattern layer 5 may include active layers of transistors (e.g., active layer T11a of the first transistor T11, active layer T12a of the first transistor T12, and active layer T13a of the second transistor T13), and the seventh pattern layer 7 may include semiconductor patterns 520 of photodetectors (e.g., semiconductor patterns 520a of photodetectors 500a, 520b of photodetectors 500b, 520c of photodetectors 500c, and 520d of photodetectors 500d). The fifth pattern layer 5 may be located between the seventh pattern layer 7 and the substrate.

[0150] Based on this, Figure 13BThis is a top view of the fifth pattern layer overlaid with the seventh pattern layer. See also... Figure 13B The orthographic projection of the semiconductor pattern 520 of the photodetector onto the substrate does not overlap with the orthographic projection of the active layers of each transistor (e.g., the active layer T11a of the first transistor T11, the active layer T12a of the first transistor T12, and the active layer T13a of the second transistor T13) onto the substrate. This allows for a more planarized photodetector, which is beneficial for improving its photodetection performance. Furthermore, the semiconductor pattern 520 of the photodetector may include H-containing materials. However, H entering the active layer of the transistor can make the active layer conductive, thereby affecting the transistor's performance. Since the orthographic projection of the semiconductor pattern of the photodetector onto the substrate does not overlap with the orthographic projection of the active layer of the transistor onto the substrate, the influence of H in the semiconductor pattern of the photodetector on the active layer of the transistor can be reduced.

[0151] In some embodiments, the area of ​​the orthographic projection of the semiconductor pattern 520 of the photodetector onto the substrate is larger than the area of ​​the orthographic projection of the active layer of the second transistor (e.g., the active layer T13a of the second transistor T13) onto the substrate. This results in a larger area of ​​the semiconductor pattern 520 of the photodetector, enabling more accurate light detection.

[0152] In some embodiments, the light-emitting substrate may include at least two (e.g., two; or n, where n is greater than or equal to 3) photodetectors and at least two light-emitting devices.

[0153] For example, see Figure 10 The light-emitting substrate includes four photodetectors: photodetector 500a, photodetector 500b, photodetector 500c, and photodetector 500d. The light-emitting substrate may also include four light-emitting devices: light-emitting device 200a, light-emitting device 200b, light-emitting device 200c, and light-emitting device 200d. These four light-emitting devices can emit different colors of light; for example, light-emitting device 200a can emit red light, light-emitting device 200b can emit green light, light-emitting device 200c can emit blue light, and light-emitting device 200d can emit white light.

[0154] See Figure 12C The fourth pattern layer 4 may include the third electrode 510a of the photodetector 500a, the third electrode 510b of the photodetector 500b, the third electrode 510c of the photodetector 500c, and the third electrode 510d of the photodetector 500d. See also Figure 12DThe seventh pattern layer 7 may include semiconductor pattern 520a of photodetector 500a, semiconductor pattern 520b of photodetector 500b, semiconductor pattern 520c of photodetector 500c, and semiconductor pattern 520d of photodetector 500d. See also Figure 12E The eighth pattern layer 8 may include the fourth electrode 530a of photodetector 500a, the fourth electrode 530b of photodetector 500b, the fourth electrode 530c of photodetector 500c, and the fourth electrode 530d of photodetector 500d. See also Figure 12F The first pattern layer 1 may include a first sub-electrode 212a of the light-emitting device 200a, a first sub-electrode 212b of the light-emitting device 200b, a first sub-electrode 212c of the light-emitting device 200c, and a first sub-electrode 212d of the light-emitting device 200d. See also Figure 12G The second pattern layer 2 may include a second sub-electrode 211a in light-emitting device 200a, a second sub-electrode 211b in light-emitting device 200b, a second sub-electrode 211c in light-emitting device 200c, and a second sub-electrode 211d in light-emitting device 200d. See also Figure 12H The third pattern layer 3 may include the third sub-electrode 213a in the light-emitting device 200a, the third sub-electrode 213b in the light-emitting device 200b, the third sub-electrode 213c in the light-emitting device 200c, and the third sub-electrode 213d in the light-emitting device 200d.

[0155] Since one light-emitting device can correspond to one first connection portion, the light-emitting substrate can also include four first connection portions. (See also...) Figure 12F The first pattern layer 1 may further include a first connection pattern 410 of the first connection portion, such as a first connection pattern 410a of the first connection portion corresponding to the light-emitting device 200a, a first connection pattern 410b of the first connection portion corresponding to the light-emitting device 200b, a first connection pattern 410c of the first connection portion corresponding to the light-emitting device 200c, and a first connection pattern 410d of the first connection portion corresponding to the light-emitting device 200d. See also Figure 12G The second pattern layer 2 may further include a second connection pattern 420 of the first connection portion, such as a second connection pattern 420a of the first connection portion corresponding to the light-emitting device 200a, a second connection pattern 420b of the first connection portion corresponding to the light-emitting device 200b, a second connection pattern 420c of the first connection portion corresponding to the light-emitting device 200c, and a second connection pattern 420d of the first connection portion corresponding to the light-emitting device 200d. See also Figure 12HThe third pattern layer 3 may also include a third connection pattern 430 of the first connection portion, such as a third connection pattern 430a of the first connection portion corresponding to the light-emitting device 200a, a third connection pattern 430b of the first connection portion corresponding to the light-emitting device 200b, a third connection pattern 430c of the first connection portion corresponding to the light-emitting device 200c, and a third connection pattern 430d of the first connection portion corresponding to the light-emitting device 200d.

[0156] Each photodetector can be configured to detect the emission of a light-emitting device. For example, photodetector 500a can be configured to detect the emission of light-emitting device 200a, photodetector 500b can be configured to detect the emission of light-emitting device 200b, photodetector 500c can be configured to detect the emission of light-emitting device 200c, and photodetector 500d can be configured to detect the emission of light-emitting device 200d.

[0157] The light-emitting substrate may further include at least two second transistors coupled to at least two photodetectors in a one-to-one correspondence, the second transistors being located in the control circuit of the photodetectors. See also Figure 10 as well as Figure 13A Each second transistor's second conductive portion can be coupled to a photodetector device, such that each second transistor can be configured to control the on and / or off state of the corresponding photodetector device. For example, the second conductive portion T13s of the second transistor T13 is coupled to the photodetector device 500a, such that the second transistor T13 can be configured to control the on and / or off state of the photodetector device 500a; the second conductive portion T23s of the second transistor T23 is coupled to the photodetector device 500b, such that the second transistor T23 can be configured to control the on and / or off state of the photodetector device 500b; the second conductive portion T33s of the second transistor T33 is coupled to the photodetector device 500c, such that the second transistor T33 can be configured to control the on and / or off state of the photodetector device 500c; and the second conductive portion T43s of the second transistor T43 is coupled to the photodetector device 500d, such that the second transistor T43 can be configured to control the on and / or off state of the photodetector device 500d.

[0158] In the second transistor, which is coupled one-to-one with the photodetector, the first conductive portion of each second film transistor can be an integral pattern. For example, see... Figure 12A and Figure 13A The first conductive portion T13d of the second transistor T13, the first conductive portion T23d of the second transistor T23, the first conductive portion T33d of the second transistor T33, and the first conductive portion T43d of the second transistor T43 can be an integral pattern. See also [link to relevant documentation] for some possible implementations. Figure 10 and Figure 12CThis integrated pattern can be coupled to the photoelectric detection signal line 60, thus enabling the coupling of multiple transistors using a single photoelectric detection signal line 60. Furthermore, it allows the control of multiple photodetectors using a single photoelectric detection signal line 60. For example, using a single photoelectric detection signal line 60, detection signals from photodetectors 500a, 500b, 500c, and 500d can be output.

[0159] In some embodiments, at least two second transistors include four second transistors coupled to four photodetectors in a one-to-one correspondence. For example, regarding four second transistors, see... Figure 12A For the second transistors T13, T23, T33, and T43, their first conductive portions (including first conductive portions T13d, T23d, T33d, and T43d, which can be an integral pattern), active layers (including active layers T13a, T23a, T33a, and T43a), and second conductive portions (including second conductive portions T13s, T23s, T33s, and T43s) can form a cross pattern.

[0160] See Figure 13A In some embodiments, the light-emitting substrate may further include at least one (e.g., one; or more) conductive rings 40, each conductive ring 40 being located on the side of the active layer of the transistor away from the substrate. Exemplarily, the conductive rings 40 may be located on the sixth pattern layer 6, the active layer of the transistor may be disposed on the fifth pattern layer 5, and in the thickness direction of the light-emitting substrate, the sixth pattern layer 6 may be located on the side of the fifth pattern layer 5 away from the substrate.

[0161] For a conductive ring 40, it can correspond to at least two second transistors. For example, the conductive ring 40 corresponds to four second transistors, namely second transistor T13, second transistor T23, second transistor T33, and second transistor T43.

[0162] For each second transistor corresponding to the same conductive ring, the portion of the conductive ring facing the active layer of each second transistor serves as the gate of the second transistor, and the orthographic projection of the integral pattern formed by the first conductive portion of each second transistor on the substrate is located inside the orthographic projection of the conductive ring on the substrate. For example, the portion of the conductive ring 40 facing the active layer T13a of the second transistor T13 serves as the gate T13g of the second transistor T13; the portion of the conductive ring 40 facing the active layer T23a of the second transistor T23 serves as the gate T23g of the second transistor T23; the portion of the conductive ring 40 facing the active layer T33a of the second transistor T33 serves as the gate T33g of the second transistor T33; and the portion of the conductive ring 40 facing the active layer T43a of the second transistor T43 serves as the gate T43g of the second transistor T43.

[0163] In this configuration, the gates of each of the aforementioned second transistors can be part of the same conductive ring, meaning the gates of each second transistor are coupled together. This allows a single signal line to control the on / off state of multiple second transistors, thereby controlling the on and / or off state of multiple photodetectors. For example, the conductive ring 40 includes the gate T13g of second transistor T13, the gate T23g of second transistor T23, the gate T33g of second transistor T33, and the gate T43g of second transistor T43. These four gates are part of the same conductive ring 40, making them mutually coupled. Furthermore, the photodetector control line 30 can be connected to the conductive ring 40, allowing the on / off state of the four second transistors to be controlled via the photodetector control line 30, thereby controlling the on and / or off state of the four photodetectors.

[0164] In some embodiments, the light-emitting substrate further includes a photoelectric detection control line 30. See also Figure 12B For a conductive ring 40, the photoelectric detection control line 30 may include two control line segments coupled to the conductive ring 40, namely control line segment 30a and control line segment 30b. Each control line segment forms an obtuse angle with the conductive ring 40 at the coupling position. For example, the conductive ring 40 is rhomboid, and control line segment 30a and the conductive ring 40 may form an obtuse angle α1 at the coupling position; control line segment 30b and the conductive ring 40 may form an obtuse angle α2 at the coupling position. In this way, the electrostatic effect between the control line segments (e.g., control line segment 30a and control line segment 30b) and the conductive ring 40 can be reduced, and the yield of the light-emitting substrate can be improved.

[0165] See Figure 12BThe sixth pattern layer 6 may include a conductive ring 40, an auxiliary electrode line 20, a photodetector control line 30, and the gate of a transistor (e.g., gate T11g, gate T12g, and gate T13g). Therefore, the conductive ring 40, the auxiliary electrode line 20, the photodetector control line 30, and the gate of the transistor can be arranged in the same layer.

[0166] The light-emitting substrate provided in this embodiment may also include other signal lines.

[0167] In some embodiments, see Figure 13A and Figure 12B The light-emitting substrate also includes gate lines (e.g., gate line 51 and gate line 52). The gate lines can be disposed on the substrate, for example, on the sixth pattern layer 6, in the same layer as the auxiliary electrode line 20, the conductive ring 40, the photodetector control line 30, and the gate of the transistor. The gate lines can be configured to control the on and / or off states of the light-emitting devices. For example, gate line 51 can be configured to control the on and / or off states of light-emitting devices 200a and 200b; gate line 52 can be configured to control the on and / or off states of light-emitting devices 200c and 200d.

[0168] In some embodiments, see Figure 10 and Figure 12C The light-emitting substrate also includes data lines (e.g., data lines Data1, Data2, Data3, and Data4). The data lines can be disposed on the substrate. The data lines can be configured to provide data signals to the light-emitting device. For example, data lines Data1, Data2, Data3, and Data4 can be disposed on a fourth pattern layer 4. The fourth pattern layer 4 can also include a third electrode 510 of a photodetector (e.g., the third electrode 510a of photodetector 500a, the third electrode 510b of photodetector 500b, the third electrode 510c of photodetector 500c, and the third electrode 510d of photodetector 500d), and a second connection portion 10. That is, the third electrode 510 of the photodetector can be disposed on the same layer as the second connection portion 10, and the data lines can be disposed on the same layer as the third electrode 510 of the photodetector and the second connection portion 10. Data line Data1 can be configured to provide a data signal to light-emitting device 200a, data line Data2 can be configured to provide a data signal to light-emitting device 200b, data line Data3 can be configured to provide a data signal to light-emitting device 200c, and data line Data4 can be configured to provide a data signal to light-emitting device 200d.

[0169] In some embodiments, the light-emitting substrate further includes power lines. The power lines may be disposed on the substrate, for example, in the fourth pattern layer 4. The power lines may be configured to provide a constant voltage signal ELVDD to the pixel driving circuitry. See also, for example, further details. Figure 10 and Figure 12C The fourth pattern layer 4 may also include power lines Vdd1 and Vdd2, meaning that power lines Vdd1 and Vdd2 can be disposed on the same layer as the data line, the third electrode 510 of the photodetector, and the second connection portion 10. Power line Vdd1 can provide a voltage signal ELVDD to the light-emitting devices 200a and 200c, and power line Vdd2 can provide a voltage signal ELVDD to the light-emitting devices 200b and 200d.

[0170] Some embodiments of this disclosure also provide a method for fabricating a light-emitting substrate. This method can be used to fabricate the light-emitting substrate described in any of the above embodiments. Figure 14 This is a flowchart of the process for fabricating a light-emitting substrate. See also... Figure 14 The method for manufacturing a light-emitting substrate may include the following steps:

[0171] S110, forming auxiliary electrode lines on the substrate.

[0172] S120, Forming a light-emitting device on a substrate.

[0173] The light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode, which are sequentially stacked along a direction away from the substrate.

[0174] S130. A photodetector is formed on a substrate.

[0175] The photodetector includes a third electrode and a fourth electrode. An auxiliary electrode line is coupled to the fourth electrode of the photodetector and also to the second electrode of the light-emitting device.

[0176] S140 (optional): A first connection portion is formed on the substrate.

[0177] In this design, the fourth electrode in the photodetector is disposed on the side of the second electrode in the light-emitting device that is close to the substrate, and the auxiliary electrode line is disposed on the side of the fourth electrode in the photodetector that is close to the substrate. Furthermore, the first connecting portion is disposed on the side of the auxiliary electrode line away from the substrate and on the side of the second electrode in the light-emitting device that is close to the substrate. The first connecting portion is coupled to the second electrode, the fourth electrode, and the auxiliary electrode line.

[0178] In some embodiments, S140 may include the following steps:

[0179] S141. A first pattern layer is formed on a substrate, the first pattern layer including a first connection pattern.

[0180] S142. A conductive thin film covering the first pattern layer is formed on a substrate on which the first pattern layer is formed.

[0181] S143. A second pattern layer is formed on a substrate on which a conductive thin film is formed, the second pattern layer including a third connection pattern.

[0182] S144. Using the second pattern layer as a mask, etch the conductive thin film to pattern the conductive thin film into a third pattern layer. The third pattern layer includes a second connection pattern, and the orthographic projection of the second connection pattern on the substrate is located inside the orthographic projection of the third connection pattern on the substrate.

[0183] After steps S141, S142, S143, and S144, a first connecting pattern, a second connecting pattern, and a third connecting pattern are obtained by stacking them together, forming a first connecting part.

[0184] In some embodiments, the method for fabricating a light-emitting substrate may further include the steps of fabricating a second connecting portion as described in the above embodiments, and a light detection device and / or transistor as described in the above embodiments.

[0185] Accordingly, see Figures 15A to 15J The method for manufacturing a light-emitting substrate may include the following steps:

[0186] S210, see also Figure 15A A fifth pattern layer 5 is formed on the substrate.

[0187] The material of the fifth pattern layer 5 can be a semiconductor material. Alternatively, a doping process can be used to pattern a portion of the fifth pattern layer 5 to become conductive. The conductive portion can serve as the source and drain regions of a transistor, while the unconductive portion can serve as the active layer of a transistor.

[0188] S220, see also Figure 15B A sixth pattern layer 6 is formed on a substrate on which the fifth pattern layer 5 is formed.

[0189] The material of the sixth pattern layer 6 can be metal.

[0190] In some possible implementations, a gate insulating layer can be formed first on the substrate on which the fifth pattern layer is formed, so that the gate insulating layer can cover the source layer of the transistor. Then, a sixth pattern layer is formed on the substrate on which the gate insulating layer is formed to form the gate of the transistor.

[0191] S230, see also Figure 15C A fourth insulating layer is formed on a substrate on which the sixth pattern layer 6 is formed.

[0192] The fourth insulating layer can be made of insulating materials, such as silicon dioxide or silicon nitride. The fourth insulating layer may include a seventh opening.

[0193] S240, see also Figure 15D A fourth pattern layer 4 is formed on a substrate on which a fourth insulating layer is formed. The material of the fourth pattern layer 4 can be metal.

[0194] S250, see also Figure 15E A seventh pattern layer 7 is formed on a substrate on which the fourth pattern layer 4 is formed. The material of the seventh pattern layer 7 can be a semiconductor material. For example, the material of the seventh pattern layer 7 can include an n-type semiconductor material, an intrinsic semiconductor material, and a p-type semiconductor material. The intrinsic semiconductor material can be lightly doped.

[0195] S260, see also Figure 15F An eighth pattern layer 8 is formed on the substrate on which the seventh pattern layer 7 is formed. The material of the eighth pattern layer 8 can be a transparent conductive material, such as a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0196] S270, see also Figure 15G A second insulating layer is formed on a substrate on which the eighth pattern layer 8 is formed. The material of the second insulating layer can be an insulating material, such as silicon dioxide or silicon nitride. The second insulating layer may include a third opening and / or a fifth opening.

[0197] S280, see also Figure 15H A third insulating layer is formed on a substrate on which a second insulating layer is formed. The material of the third insulating layer can be an insulating material, such as silicon dioxide or silicon nitride. The third insulating layer may include a fourth opening and / or a sixth opening.

[0198] S290, see also Figure 15I A first pattern layer 1 is formed on a substrate on which a third insulating layer is formed.

[0199] The material of the first pattern layer 1 can be a transparent conductive material, for example, it can be a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0200] S300, see also Figure 15J A second pattern layer 2 and a third pattern layer are formed on a substrate on which a first pattern layer 1 is formed.

[0201] In some possible implementations, forming the second pattern layer 2 and the third pattern layer on the substrate on which the first pattern layer 1 is formed may include: forming a conductive thin film on the substrate on which the first pattern layer 1 is formed, the conductive thin film being made of a metal, such as Al. This conductive thin film covers the first pattern layer 1; and forming the third pattern layer on the substrate on which the conductive thin film is formed. The material of the third pattern layer may be a material with a high work function, such as a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). Then, using the third pattern layer as a mask, the conductive thin film is etched to pattern the conductive thin film into the second pattern layer 2. Because of this process, the shape of the third pattern layer 3 can be similar to the shape of the second pattern layer 2; only the second pattern layer 2 is shown in Figure 21J, and the third pattern layer is omitted.

[0202] S320 (optional): One or more of a first insulating layer, a light-emitting functional layer, and a second electrode are formed on a substrate on which the third pattern layer 3 is formed.

[0203] The material of the first insulating layer can be an insulating material, such as silicon dioxide or silicon nitride. The first insulating layer may include a first opening, and may also include a second opening and / or an eighth opening.

[0204] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting substrate, comprising: Substrate; Auxiliary electrode lines are disposed on the substrate. A light-emitting device is disposed on the substrate, the light-emitting device comprising a first electrode, a light-emitting functional layer and a second electrode sequentially stacked along a direction away from the substrate; A photodetector is disposed on the substrate, the photodetector including a third electrode and a fourth electrode; The auxiliary electrode line is coupled to the fourth electrode, and the auxiliary electrode line is coupled to the second electrode. The fourth electrode in the photodetector is disposed on the side of the second electrode in the light-emitting device that is close to the substrate, and the auxiliary electrode line is disposed on the side of the fourth electrode in the photodetector that is close to the substrate. The light-emitting substrate further includes a first connecting portion and a second connecting portion; The first connection portion is disposed on the side of the auxiliary electrode line away from the substrate and on the side of the second electrode close to the substrate, and the first connection portion is coupled to the second electrode, the fourth electrode and the auxiliary electrode line; The second connection portion is disposed on the substrate, and is disposed on the side of the first connection portion near the substrate and on the side of the auxiliary electrode line away from the substrate; the second connection portion is in contact with the first connection portion and the auxiliary electrode line.

2. The light-emitting substrate according to claim 1, further comprising: A first insulating layer is disposed on the side of the first connection portion away from the substrate and on the side of the second electrode of the light-emitting device close to the substrate. The first insulating layer includes a first opening that exposes at least a portion of the first connection portion; the second electrode of the light-emitting device extends into the first opening and contacts the first connection portion in the first opening.

3. The light-emitting substrate according to claim 2, wherein, The first connection portion includes: a first connection pattern, a second connection pattern, and a third connection pattern sequentially stacked along a direction away from the substrate, wherein the orthographic projection of the second connection pattern on the substrate is located inside the orthographic projection of the third connection pattern on the substrate; The first opening of the first insulating layer exposes at least a portion of the first connection pattern, at least a portion of the second connection pattern, and at least a portion of the third connection pattern; the light-emitting functional layer in the light-emitting device further extends into the first opening, and the portion of the light-emitting functional layer located in the first opening is discontinuous; the second electrode further extends into the first opening, and the portion of the second electrode located in the first opening contacts at least one of the first connection pattern, the second connection pattern, and the third connection pattern.

4. The light-emitting substrate according to claim 3, wherein, The orthographic projection of the second connection pattern on the substrate is located inside the orthographic projection of the first connection pattern on the substrate; The portion of the second electrode located in the first opening is in contact with at least the first connection pattern.

5. The light-emitting substrate according to any one of claims 3 to 4, wherein, The first connection pattern in the first connection portion is in contact with the fourth electrode.

6. The light-emitting substrate according to any one of claims 2 to 4, wherein, The first insulating layer further includes a second opening, and the portion of the light-emitting functional layer in the light-emitting device located in the second opening is in contact with the first electrode in the light-emitting device.

7. The light-emitting substrate according to claim 1, further comprising: The second insulating layer and the third insulating layer are sequentially stacked on the substrate in a direction away from the substrate, and are located on the side of the first connecting portion close to the substrate and the side of the second connecting portion away from the substrate. The second insulating layer includes a third opening and a fourth opening. The upper edge of the third opening is projected onto the substrate and is located inside the lower edge of the fourth opening and is projected onto the substrate. The third opening overlaps with the projection of the second connecting portion onto the substrate. The first connecting portion contacts the second connecting portion through the third opening and the fourth opening. Wherein, the upper edge of the third opening is the edge of the third opening away from the substrate, and the lower edge of the fourth opening is the edge of the fourth opening close to the substrate.

8. The light-emitting substrate according to claim 1, wherein, The second connection portion is disposed in the same layer as the third electrode in the photodetector.

9. The light-emitting substrate according to any one of claims 1 to 4, further comprising: The second insulating layer and the third insulating layer are sequentially stacked on the substrate in a direction away from the substrate, and are located on the side of the first connection portion close to the substrate and the side of the fourth electrode away from the substrate. The second insulating layer includes a fifth opening, and the third insulating layer includes a sixth opening. The upper edge of the fifth opening is projected onto the substrate and lies inside the lower edge of the sixth opening and is projected onto the substrate. The projection of the fifth opening onto the substrate overlaps with the projection of the fourth electrode onto the substrate. The first connecting portion contacts the fourth electrode through the fifth opening and the sixth opening. Wherein, the upper edge of the fifth opening is the edge of the fifth opening away from the substrate, and the lower edge of the sixth opening is the edge of the sixth opening close to the substrate.

10. The light-emitting substrate according to any one of claims 1 to 4, further comprising: Multiple transistors, including: at least one first transistor coupled to the light-emitting device, and a second transistor coupled to the photodetector; The plurality of transistors are disposed on the substrate, and each transistor includes an active layer located on the side of the photodetector closer to the substrate. The photodetector includes a semiconductor pattern, the orthographic projection of which on the substrate does not overlap with the orthographic projection of each active layer of the plurality of transistors on the substrate.

11. The light-emitting substrate according to claim 10, wherein, The area of ​​the semiconductor pattern of the photodetector on the substrate is larger than the area of ​​the active layer of the second transistor on the substrate.

12. The light-emitting substrate according to claim 10, wherein, The at least one first transistor includes a driving transistor, and the aspect ratio of the channel region of the second transistor is smaller than the aspect ratio of the channel region of the driving transistor.

13. The light-emitting substrate according to claim 10, wherein, The light-emitting substrate includes: at least two photodetectors and at least two second transistors coupled to the at least two photodetectors in a one-to-one correspondence; In the at least two second transistors, each second transistor further includes: a first conductive portion and a second conductive portion located on both sides of the active layer and in contact with the active layer, wherein each first conductive portion is an integral pattern, and each second conductive portion is coupled to one of the photodetectors.

14. The light-emitting substrate according to claim 13, wherein, The at least two second transistors include: four second transistors coupled to each of the four photodetectors in a one-to-one correspondence; The first conductive portion, active layer, and second conductive portion of the four second transistors form a cross pattern.

15. The light-emitting substrate according to claim 13, further comprising: A photoelectric detection signal line, wherein the photoelectric detection signal line is coupled to the integral pattern.

16. The light-emitting substrate according to claim 13, further comprising: At least one conductive ring, each of the conductive rings being located on the side of the active layer away from the substrate; For the at least two second transistors, a portion of the conductive ring opposite the active layer of each second transistor serves as the gate of the second transistor; The orthographic projection of the integral pattern on the substrate is located inside the orthographic projection of the conductive ring on the substrate.

17. The light-emitting substrate according to claim 16, further comprising: The photoelectric detection control line includes two control line segments coupled to a conductive ring, each control line segment forming an obtuse angle with the conductive ring at the coupling position.

18. The light-emitting substrate according to any one of claims 1 to 4, further comprising: Data lines are disposed on the substrate. The data line is disposed on the same layer as the third electrode.

19. The light-emitting substrate according to any one of claims 1 to 4, further comprising: Gate lines are disposed on the substrate. The grid lines are arranged in the same layer as the auxiliary electrode lines.

20. The light-emitting substrate according to any one of claims 1 to 4, wherein, The first electrode in the light-emitting device includes a first sub-electrode, a second sub-electrode, and a third sub-electrode that are sequentially stacked along a direction away from the substrate. Wherein, the first sub-electrode is a transparent conductive electrode, the second sub-electrode is a reflective electrode, the first sub-electrode includes a first part and a second part other than the first part, the first part is blocked by the third sub-electrode, and the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the photodetector on the substrate.

21. The light-emitting substrate according to claim 20, wherein, The first connection portion includes: a first connection pattern, a second connection pattern, and a third connection pattern sequentially stacked along a direction away from the substrate. The first sub-electrode is disposed on the same layer as the first connection pattern of the first connection portion; The second sub-electrode is disposed on the same layer as the second connection pattern of the first connection portion; The third sub-electrode is disposed on the same layer as the third connection pattern of the first connection portion.

22. The light-emitting substrate according to any one of claims 1 to 4, wherein, The fourth electrode in the photodetector is closer to the light-emitting device than the third electrode; The fourth electrode is a transparent conductive electrode.

23. The light-emitting substrate according to any one of claims 1 to 4, wherein, The light-emitting substrate is a display panel.

24. A display device, comprising: The light-emitting substrate according to claim 23.

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