Apparatus for processing a substrate and method for processing a substrate

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The present invention concept provides a substrate processing apparatus. The substrate processing apparatus includes a support unit that horizontally maintains a substrate; a laser irradiation unit for irradiating the substrate with a laser; a light detector for detecting an energy of a reflection light reflected from the substrate among the laser irradiated on the substrate; and a processor, and wherein the processor sets a second output of a second laser for irradiating the substrate to heat the substrate based on an energy of a first reflection light reflected from the substrate by the first laser detected by the light detector.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0096137, filed with the Korean Intellectual Property Office on July 22, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] Various processes, such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning, are performed on substrates to manufacture semiconductor devices or liquid crystal displays. Among these processes, etching, or cleaning, is the process of removing unwanted areas from a thin film formed on the substrate. Thin films require high selectivity, high etch rate, and etch uniformity, and with the increasing integration of semiconductor devices, even higher levels of etch selectivity and etch uniformity are needed.

[0005] Generally, in etching or cleaning processes, chemical treatment, rinsing, and drying steps are performed sequentially on the substrate. In the chemical treatment step, chemicals are dispensed onto the substrate to etch thin films formed on the substrate or remove foreign matter from the substrate. In the rinsing step, a rinsing solution, such as deionized (DI) water, is dispensed onto the substrate. Using liquids to treat the substrate may involve heating the substrate. The applicant introduces a laser as a heating source for the substrate. A method for heating a substrate using a laser is described in Korean Application No. 10-2020-0117842 filed by the applicant.

[0006] Figure 1 This diagram illustrates the temperature change over a period of time when processing a first wafer and a second wafer using the same laser output with the same scheme. See reference... Figure 1 When applying the same output and the same scheme, the time required to reach the set temperature and the temperature reached may vary depending on the type of wafer. Furthermore, the time required to reach the set temperature and the temperature reached may vary depending on the state of the surface irradiated by the laser (e.g., a film) or the thickness of the wafer. Summary of the Invention

[0007] An embodiment of the present invention provides a substrate processing apparatus that can effectively process substrates.

[0008] An embodiment of the present invention provides a substrate processing apparatus that can improve etching performance.

[0009] An embodiment of the present invention provides a substrate processing apparatus that can heat different substrates in the same manner when they are brought into the apparatus.

[0010] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0011] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a support unit that horizontally holds a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photodetector for detecting the energy of reflected light from the substrate in the laser irradiating the substrate; and a processor, wherein the processor irradiates the substrate with a first laser of a first output, and, based on the energy of the first reflected light from the substrate detected by the photodetector, sets a second output of a second laser for irradiating the substrate to heat it.

[0012] In the implementation scheme, the laser irradiation unit irradiates the bottom surface of the substrate with a laser.

[0013] In the implementation plan, the first output is lower than the second output.

[0014] In one embodiment, the substrate processing apparatus further includes a liquid supply unit for supplying liquid to the substrate, wherein the processor forms a liquid film on the substrate and irradiates the substrate with a second output laser.

[0015] In one implementation, the processor compares the energy of the first reflected light with a pre-stored reference value, and if the energy of the first reflected light is greater than the energy of the reflected light of the reference value, the second output is set to a reference output higher than the reference value; and if the energy of the first reflected light is less than the energy of the reflected light of the reference value, the second output is set to a reference output lower than the reference value.

[0016] In the implementation scheme, the processor calculates the reflectivity and adsorption rate based on the energy of the first reflected light, and sets the second output to be inversely proportional to the adsorption rate.

[0017] In the implementation scheme, the energy absorbed by the substrate through the second output is set to be the same as the energy absorbed by the reference wafer, based on the reference output of the pre-stored reference value.

[0018] In the implementation scheme, the photodetector detects the reflected light in real time while the substrate is heated by the second laser, and the processor monitors the detected reflected light in real time and adjusts the intensity of the second output if the energy of the reflected light changes.

[0019] In the implementation scheme, if the energy of the reflected light becomes smaller, the intensity of the second output is adjusted to be weaker.

[0020] In the implementation scheme, if the energy of the reflected light becomes greater, the intensity of the second output is adjusted to be stronger.

[0021] The present invention provides a substrate processing method for heating a substrate by irradiating it with a laser. The substrate processing method includes: irradiating a first output laser onto a substrate relative to a loaded substrate using a laser irradiation unit; detecting the energy of a first reflected light from the substrate in the first laser using a photodetector; and setting a second output of a second laser to heat the substrate based on the energy of the first reflected light detected by the photodetector.

[0022] In this implementation, a laser is directed onto the bottom surface of the substrate.

[0023] In the implementation plan, the first output is lower than the second output.

[0024] In one implementation, the processor compares the energy of the first reflected light with a pre-stored reference value, and if the energy of the first reflected light is greater than the reference value, the second output is set to be higher than the output corresponding to the reference value, and if the energy of the first reflected light is less than the reference value, the second output is set to be lower than the output corresponding to the reference value.

[0025] In the implementation scheme, reflectivity and absorptivity are calculated based on the energy of the first reflected light, and the second output is set to be inversely proportional to the absorptivity.

[0026] In the implementation scheme, the energy absorbed by the substrate through the second output is set to be the same as the energy absorbed by the reference wafer, based on the reference output of the pre-stored reference value.

[0027] In the implementation scheme, the photodetector detects the reflected light in real time while the substrate is heated by the second laser, and the processor monitors the detected reflected light in real time and adjusts the intensity of the second output if the energy of the reflected light changes.

[0028] In the implementation scheme, if the energy of the reflected light becomes smaller, the intensity of the second output is adjusted to be weaker.

[0029] In the implementation scheme, if the energy of the reflected light becomes greater, the intensity of the second output is adjusted to be stronger.

[0030] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a support unit that horizontally holds a substrate; a liquid supply unit for supplying liquid to the substrate; a laser irradiation unit for irradiating the bottom surface of the substrate with a laser; a photodetector for detecting the energy of reflected light from the substrate in the laser irradiating the substrate; and a processor; wherein the processor irradiates the substrate with a first output laser, sets a second output laser for irradiating the substrate to heat the substrate based on the energy of the first reflected light from the substrate detected by the photodetector, forms a liquid film on the substrate, and irradiates the second output laser relative to the substrate.

[0031] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0032] According to the embodiments conceived in this invention, etching performance can be improved.

[0033] According to an embodiment of the invention, when different substrates are brought into the device, these substrates can be heated in the same manner.

[0034] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0035] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the various figures, and in the figures:

[0036] Figure 1 The graph illustrates the temperature change over a period of time when the first and second wafers are processed with the same laser output using the same scheme.

[0037] Figure 2 A plan view of a substrate processing facility 1 according to an embodiment of the present invention is shown.

[0038] Figure 3 To illustrate the setting according to the first embodiment Figure 2 A cross-sectional view of the substrate processing apparatus 300 in the process chamber 260.

[0039] Figure 4 To Figure 2 The process chamber 260 provides a schematic diagram of the laser generator 500 for the laser.

[0040] Figure 5This is a side view of the laser irradiation unit 400-1 according to the first embodiment.

[0041] Figure 6 This is a side view of the laser irradiation unit 400-2 according to the second embodiment.

[0042] Figure 7 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided.

[0043] Figure 8 To illustrate the setting according to the second embodiment Figure 2 A cross-sectional view of the substrate processing apparatus 300 in the process chamber 260.

[0044] Figure 9 A cross-sectional view showing the operation of a photodetector 700 according to an embodiment of the present invention in a substrate processing apparatus.

[0045] Figure 10 A cross-sectional view is shown illustrating the operation of a photodetector 700 in a substrate processing apparatus according to another embodiment of the present invention. Detailed Implementation

[0046] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of relevant known technologies may be omitted where such descriptions may obscure the essence of the inventive concept.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the terms “comprising” and / or “including” as used herein specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0048] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe different elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or segment from another region, layer, or segment. Therefore, without departing from the teachings of the inventive concept, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment.

[0049] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0050] In this embodiment, a process of etching a substrate using a processing liquid will be described as an example. However, this embodiment is not limited to this, and can be applied to various substrate processing processes that use liquids, such as cleaning processes, ashing processes, and developing processes.

[0051] Here, the substrate can encompass a comprehensive concept including all substrates used to manufacture semiconductor elements, flat panel displays (FPDs), and other objects with circuit patterns formed on thin films. Examples of substrates include silicon wafers, glass substrates, and organic substrates.

[0052] In the following text, reference will be made to Figures 2 to 10 The embodiments of the present invention are described in detail.

[0053] Figure 2 A plan view of a substrate processing facility 1 according to an embodiment of the present invention is shown. (Refer to...) Figure 2 The substrate processing facility 1 includes an indexing module 10 and a process module 20. The indexing module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process module 20 are arranged in a row in sequence.

[0054] In the following text, the direction in which the loading port 120, the conveying frame 140 and the process module 20 are arranged is referred to as the first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16.

[0055] The carrier 18, in which the substrate W is received, is situated on the loading port 120. Multiple loading ports 120 can be provided. These loading ports 120 can be arranged in a row along the second direction 14. The number of loading ports 120 can be increased or decreased depending on the process efficiency and floor space of the process module 20. The carrier 18 has multiple slots (not shown) formed therein, in which the substrate W is received in a horizontal position relative to the ground. A front-opening unified pod (FOUP) can be used as the carrier 18.

[0056] The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260.

[0057] The transfer chamber 240 is configured such that its longitudinal direction is parallel to the first direction 12. Multiple process chambers 260 can be arranged on one side or opposite sides of the transfer chamber 240. On opposite sides of the transfer chamber 240, the multiple process chambers 260 can be arranged symmetrically with respect to the transfer chamber 240. Some of the process chambers 260 are arranged along the longitudinal direction of the transfer chamber 240. Furthermore, other process chambers 260 are stacked one on top of another. That is, the process chambers 260 can be arranged in an A×B configuration on one side of the transfer chamber 240. Here, "A" represents the number of process chambers 260 arranged in a row along the first direction 12, and "B" represents the number of process chambers 260 arranged in a column along the third direction 16. When four or six process chambers 260 are arranged on one side of the transfer chamber 240, the process chambers 260 can be arranged in a 2×2 or 3×2 configuration. The number of process chambers 260 can be increased or decreased. Alternatively, the process chamber 260 may be disposed on only one side of the transfer chamber 240. In another case, the process chamber 260 may be disposed in a single layer on the opposite side of the transfer chamber 240.

[0058] A buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides space for the substrate W to remain between the transfer chamber 240 and the transfer frame 140 before transfer. The buffer unit 220 has a plurality of slots (not shown) formed therein, in which the substrate W is received. These slots (not shown) are spaced apart from each other along a third direction 16. The buffer unit 220 is open on the side facing the transfer frame 140 and on the opposite side facing the transfer chamber 240.

[0059] The transfer frame 140 transfers the substrate W between the carrier 18 (located on the loading port 120) and the buffer unit 220. An index track 142 and an indexing robot 144 are disposed within the transfer frame 140. The index track 142 is configured such that its longitudinal direction is parallel to a second direction 14. The indexing robot 144 is mounted on the index track 142 and moves linearly along the index track 142 in the second direction 14. The indexing robot 144 includes a base 144a, a body 144b, and an indexing arm 144c. The base 144a is movable along the index track 142. The body 144b is coupled to the base 144a. The body 144b is movable on the base 144a along a third third direction 16. Furthermore, the body 144b is rotatable on the base 144a. The indexing arm 144c is coupled to the body 144b and is movable forward and backward relative to the body 144b. Multiple index arms 144c can be configured. Each index arm 144c can be driven individually. The index arms 144c are stacked one on top of another along a third direction 16, with gaps between them. Some of the index arms 144c can be used to transfer the substrate W from the process module 20 to the carrier 18, and other index arms 144c can be used to transfer the substrate W from the carrier 18 to the process module 20. Accordingly, during the transfer of the substrate W between the carrier 18 and the process module 20 by the indexing robot 144, particles generated by the substrate W to be processed can be prevented from adhering to the substrate W that has already been processed.

[0060] The transfer chamber 240 transfers substrate W between the buffer unit 220 and the process chamber 260, and between these process chambers 260. A guide rail 242 and a main robot 244 are disposed in the transfer chamber 240. The guide rail 242 is configured such that its length is parallel to a first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly along the guide rail 242 along the first direction 12. The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is movable on the base 244a along a third direction 16. Furthermore, the body 244b is rotatable on the base 244a. The main arm 244c is coupled to the body 244b and is movable forward and backward relative to the body 244b. Multiple main arms 244c can be configured. Each main arm 244c can be driven individually. The main arms 244c can be stacked one on top of another along a third direction 16, with gaps between them.

[0061] Process chamber 260 is equipped with a substrate processing apparatus 300 for performing liquid processing processes on substrate W. Depending on the type of liquid processing process performed by the substrate processing apparatus 300, the substrate processing apparatus 300 may have different structures. Alternatively, the substrate processing apparatuses 300 in their respective process chambers 260 may have the same structure. Selectively, process chambers 260 may be divided into multiple groups. Substrate processing apparatuses 300 in the same group of process chambers 260 may have the same structure, while substrate processing apparatuses 300 in different groups of process chambers 260 may have different structures.

[0062] Figure 3 To illustrate the setting according to the first embodiment Figure 2 A cross-sectional view of the substrate processing apparatus 300 in the process chamber 260. (Refer to...) Figure 3 The substrate processing apparatus 300 includes a treating vessel 320, a substrate support unit 340, a lifting / lowering unit 360, a liquid supply unit 390, a laser irradiation unit 400, a photodetector 700, and a processor (not shown).

[0063] The processing dish 320 has a container shape that is open at the top. The processing dish 320 includes a first recovery bowl 321 and a second recovery bowl 322. Recovery bowls 321 and 322 recover different processing liquids used in the process. The first recovery bowl 321 has an annular ring shape surrounding a substrate support unit 340. The second recovery bowl 322 also has an annular shape surrounding the substrate support unit 340. In one embodiment, the first recovery bowl 321 has an annular shape surrounding the second recovery bowl 322. The second recovery bowl 322 can be inserted into the first recovery bowl 321. The height of the second recovery bowl 322 can be greater than the height of the first recovery bowl 321. The second recovery bowl 322 may include a first guide portion 326 and a second guide portion 324. The first guide portion 326 may be disposed at the top of the second recovery bowl 322. The first guide portion 326 may extend toward the substrate support unit 340. The first guide portion 326 may be formed to be inclined upward toward the substrate support unit 340. In the second recovery bowl-shaped portion 322, the second guide portion 324 may be spaced downward from the first guide portion 326. The second guide portion 324 may extend toward the substrate support unit 340. The second guide portion 324 may be formed to be inclined upward toward the substrate support unit 340. A first inlet 324a (through which processing liquid is introduced) is formed between the first guide portion 326 and the second guide portion 324. A second inlet 322a is provided below the second guide portion 324. The first inlet 324a and the second inlet 322a may be located at different heights. The second guide portion 324 may have a hole (not shown) formed therein, and the processing liquid introduced through the first inlet 324a may flow through the hole (not shown) to the second recovery line 322b connected to the bottom of the second recovery bowl-shaped portion 322. The hole (not shown) of the second guide portion 324 may be formed in the lowest position of the second guide portion 324. The treated liquid recovered by the first recovery bowl 321 flows to the first recovery line 321b connected to the bottom of the first recovery bowl 321. The treated liquid introduced into the recovery bowls 321 and 322 can be supplied to an external treated liquid regeneration system (not shown) through the recovery lines 321b and 322b, and can be regenerated by the regeneration system.

[0064] The lifting unit 360 linearly moves the processor dish 320 in the up / down direction. For example, the lifting unit 360 can be connected to the second collection bowl-shaped portion 322 of the processor dish 320 and can move the second collection bowl-shaped portion 322 in the up / down direction to change the height of the processor dish 320 relative to the substrate support unit 340. The lifting unit 360 includes a bracket 362, a movable shaft 364, and an actuator 366. The bracket 362 is fixedly attached to the outer wall of the processor dish 320, and the movable shaft 364 is fixedly connected to the bracket 362 and moves in the up / down direction via the actuator 366. The second collection bowl-shaped portion 322 of the processor dish 320 moves downward such that when the substrate W is loaded onto or unloaded from the substrate support unit 340, the top portion of the substrate support unit 340 protrudes above the processor dish 320. Specifically, the second collection bowl-shaped portion 322 of the processor dish 320 moves downward such that the top portion of the substrate support unit 340 further protrudes beyond the first guide portion 326. Furthermore, during the process, the height of the processor dish 320 is adjusted according to the type of processing liquid dispensed onto the substrate W to guide the processing liquid into the pre-defined recovery bowls 321 and 322. Alternatively, the lifting unit 360 can move the substrate support unit 340 vertically instead of the processor dish 320. In another case, the lifting unit 360 can raise or lower the entire processor dish 320 vertically. The lifting unit 360 is configured to adjust the relative height between the processor dish 320 and the substrate support unit 340. Embodiments of the processor dish 320 and the lifting unit 360 can be provided in various structures and methods depending on the design, as long as the relative height between the processor dish 320 and the substrate support unit 340 can be adjusted.

[0065] The substrate support unit 340 horizontally supports and rotates the substrate W during the process.

[0066] The substrate support unit 340 includes a window member 348, a rotating housing 342, a chuck pin 346, and a drive member 349.

[0067] Window member 348 is located below substrate W. Window member 348 may have a shape that generally corresponds to substrate W. For example, when substrate W is a circular wafer, window member 348 may have a generally circular shape. Window member 348 may have the same diameter as substrate W, or it may have a smaller or larger diameter than substrate W. Window member 348 allows laser light to pass through window member 348 and reach substrate W. Window member 348 can protect the components of substrate support unit 340 from chemical exposure and can be configured in various sizes and shapes according to design. Window member 348 has a larger diameter than substrate W.

[0068] Window member 348 can be formed of a material with high light transmittance. Accordingly, laser light emitted by laser irradiation unit 400 can pass through window member 348. Window member 348 can be formed of a material with excellent corrosion resistance so as not to react with chemicals. For example, window member 348 can be formed of quartz, glass, or sapphire.

[0069] A rotating housing 342 may be disposed on the bottom surface of the window member 348. The rotating housing 342 supports the edge of the window member 348. The rotating housing 342 has an empty space extending through it in the vertical direction. The empty space formed by the rotating housing 342 may have an internal diameter that gradually increases from the portion adjacent to the laser irradiation unit 400 toward the window member 348. The rotating housing 342 may have a cylindrical shape with an internal diameter that gradually increases from the lower end to the top end. The empty space in the rotating housing 342 allows laser light emitted by the laser irradiation unit 400 (described below) to be applied to the substrate W without interfering with the rotating housing 342. The connection between the rotating housing 342 and the window member 348 may have an airtight structure so that chemicals dispensed onto the substrate W do not flow toward the laser irradiation unit 400.

[0070] The drive member 349 can be coupled to the rotating housing 342 and can rotate the rotating housing 342. Any member capable of rotating the rotating housing 342 can be used as the drive member 349. For example, the drive member 349 can be a hollow motor. According to an embodiment, the drive member 349 includes a stator 349a and a rotor 349b. The stator 349a is fixed in one position, and the rotor 349b is coupled to the rotating housing 342. In the illustrated embodiment, a hollow motor is shown having a rotor 349b disposed inside and a stator 349a disposed outside. The lower portion of the rotating housing 342 can be coupled to the rotor 349b and can be rotated by the rotation of the rotor 349b. When using a hollow motor as the drive member 349, a hollow motor with a small hollow space can be selected to correspond to the narrow lower portion of the rotating housing 342. Accordingly, manufacturing costs can be reduced. According to one embodiment, the stator 349a of the drive member 349 can be fixedly connected to the support wall, on which the processor dish 320 is supported. According to another embodiment, the substrate support unit 340 may further include a cover member 343 that protects the drive member 349 from chemicals.

[0071] The liquid supply unit 390 may be a component for dispensing chemicals from above onto the substrate W, and may include at least one chemical dispensing nozzle. The liquid supply unit 390 may pump chemicals from a storage tank (not shown), deliver chemicals, and dispense chemicals onto the substrate W via the chemical dispensing nozzle. The liquid supply unit 390 may include an actuator and may be movable between a process position directly above the center of the substrate W and a standby position outside the substrate W via the actuator.

[0072] Liquid supply unit 390 can dispense various chemicals onto substrate W according to substrate processing processes. In the process of etching a silicon nitride film, liquid supply unit 390 can dispense a chemical containing phosphoric acid (H3PO4) onto substrate W. Liquid supply unit 390 may also include deionized water (DIW) dispensing nozzles, isopropyl alcohol (IPA) dispensing nozzles for rinsing the substrate surface after the etching process, and nitrogen (N2) dispensing nozzles for performing a drying process after the rinsing process. Although not shown, liquid supply unit 390 may include a nozzle moving member (not shown) that supports and moves the chemical dispensing nozzles. The nozzle moving member (not shown) may include a support shaft (not shown), an arm (not shown), and an actuator (not shown). The support shaft (not shown) is located on one side of the processing dish 320. The support shaft (not shown) has a rod shape, with its longitudinal direction parallel to a third direction 16. The support shaft (not shown) is rotatable via an actuator (not shown). The arm (not shown) is connected to the top end of the support shaft (not shown). An arm (not shown) extends from a support shaft (not shown) at a right angle to the support shaft. A chemical dispensing nozzle is fixedly connected to the end of the arm (not shown). When the support shaft (not shown) rotates, the chemical dispensing nozzle can swing together with the arm (not shown). The chemical dispensing nozzle can move between a process position and a standby position. Optionally, the support shaft (not shown) can be movable upward and downward. Furthermore, the arm (not shown) can be movable forward and backward along its longitudinal direction.

[0073] The laser irradiation unit 400 is a component for applying laser light to the substrate W. The laser irradiation unit 400 can be located below the window member 348 in the substrate support unit 340. The laser irradiation unit 400 can emit laser light toward the substrate W located on the substrate support unit 340. The laser light emitted by the laser irradiation unit 400 can be applied to the substrate W through the window member 348 of the substrate support unit 340. Accordingly, the substrate W can be heated to a set temperature.

[0074] The laser irradiation unit 400 can be configured to uniformly apply laser light to the entire surface of the substrate W. There are no particular limitations on the laser irradiation unit 400, as long as it can uniformly apply laser light to the entire surface of the substrate W. In the following text, reference will be made to... Figure 5 The laser irradiation unit 400-1 according to the first embodiment is described, and references are made to it. Figure 6 The laser irradiation unit 400-2 according to the second embodiment is described.

[0075] Laser generator 500 can generate laser light. Laser generator 500 can generate laser light with a wavelength that is easily absorbed by the substrate W. According to an embodiment, laser generator 500 can be configured as an output device capable of high output at 4kW to 5kW.

[0076] Figure 4 To Figure 2 The process chamber 260 provides a schematic diagram of the laser generator 500. (See reference...) Figure 4 The laser generator 500 may include a laser source unit 510, a beam shaper 520, and a beam expander 530. The laser source unit 510 outputs laser light from energy derived from power. The beam shaper 520 modifies the profile of the laser light output from the laser source unit 510. In one embodiment, the beam shaper 520 shapes the input laser light into a predetermined beam shape. In another embodiment, a laser light in the form of a Gaussian beam may be input to the beam shaper 520 and converted into a parallel flat topbeam or a truncated Gaussian beam. The beam expander 530 amplifies the parallel light light of the laser light having a predetermined diameter. For example, the beam expander 530 may include multiple lenses to change the diameter of the laser light. The beam generated by the laser source unit 510 may be output through the beam shaper 520 and / or the beam expander 530. For example, the beam generated by the laser source unit 510 can pass through the beam shaper 520 and the beam expander 530, or only through the beam shaper 520, or only through the beam expander 530. Furthermore, according to the embodiment, when the ring beam irradiation unit receives a ring laser generated by the laser generator 500, the ring beam irradiation unit does not need to shape the laser into a ring shape.

[0077] The following will refer to Figure 5 To describe the laser irradiation unit 400-1 according to the first embodiment. Figure 5This is a side view of a laser irradiation unit 400-1 according to a first embodiment. The laser irradiation unit 400-1 may include a lens module 442. The laser irradiation unit 400-1 may receive laser light from a laser transmission member 443. The lens module 442 may include a combination of at least one lens and a container for supporting and protecting the lens.

[0078] The laser transmission component 443 is a component that transmits the laser generated by the laser generator 500 to the lens module 442. For example, the laser transmission component 443 may be an optical fiber. The end portion of the laser transmission component 443 may be connected to the fastening component 441, and the laser transmission component 443 may be connected to the lens module 442 via the fastening component 441.

[0079] Figure 6 This is a side view of the laser irradiation unit 400-2 according to the second embodiment. (Refer to...) Figure 6 The laser illumination unit 400-2 may include a reflection unit 445, an imaging unit 446, a sensing unit 447, and a collimator 448. The reflection unit 445 may reflect a portion of the laser generated by the laser generator 500 and transmitted through the laser transmission member 443 toward the lens module 442, while allowing the remainder to pass through. For this purpose, the reflection unit 445 may include a reflector 145a mounted at a 45-degree angle.

[0080] Imaging unit 446 can be connected to reflection unit 445. Imaging unit 446 can capture the laser light passing through reflection unit 445 and convert the laser light into image data. Imaging unit 446 can analyze the image data to check whether the laser light is output from laser generator 500 as designed and whether the laser light is transmitted through laser transmission member 443 as designed.

[0081] Sensing unit 447 can be connected to reflecting unit 445 and can sense the intensity of the laser input to reflecting unit 445. For example, sensing unit 447 can be a photosensor. When the laser intensity is too high, the substrate W can be heated quickly. Conversely, when the laser intensity is too low, it may take a long time to heat the substrate W. Sensing unit 447 can determine whether the laser intensity is an appropriate value.

[0082] Refer again Figure 3 The laser irradiation unit 400 can be connected to the XYZ stage 380. The XYZ stage 380 may include a lifting actuator 461 and a connecting part 382 connected to the lifting actuator 461 and to the laser irradiation unit 400. The XYZ stage 380 can adjust the position of the laser irradiation unit 400 relative to the substrate W. In addition, the laser intensity can be adjusted by adjusting the distance between the laser irradiation unit 400 and the substrate W through the lifting actuator 381.

[0083] The photodetector 700 measures light energy. In one embodiment, the photodetector measures the energy of reflected light on the rear surface of the wafer after it has been loaded and before the process begins. In another embodiment, the photodetector 700 may be configured to be attached to a container (e.g., lens module 442) of the laser irradiation unit 400. In yet another embodiment, the photodetector 700 may be positioned at various locations, as long as such locations allow the photodetector to measure the reflected light. A method for heating a substrate W (e.g., a wafer) by calculating the laser output using the reflected energy measured by the photodetector 700, and a method for processing the substrate using this method, will be described later.

[0084] Figure 7 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided. (Refer to...) Figure 7 A substrate processing method according to an embodiment of the present invention is described.

[0085] The first wafer is mounted on the substrate support unit 340 (S10). The first wafer is an embodiment of the substrate W. Terms such as first wafer and second wafer are terms used to distinguish wafers.

[0086] With the first wafer loaded, a first output laser is irradiated onto the bottom surface of the first wafer (S20). The first output is lower than the second output used to heat the wafer. For example, the first output may be 1000W or less. For description, the first output laser is referred to as the first laser. A photodetector 700 measures the reflected light from the first wafer caused by the first laser. For description, the reflected light caused by the first laser is referred to as the first reflected light. A processor (not shown) collects the energy value of the reflected light detected by the photodetector 700. The processor (not shown) calculates the reflectivity B based on the reflected light energy A (S41). The reflectivity can be calculated based on a pre-stored reference value.

[0087] The pre-stored reference values ​​are measured using a reference wafer. These reference values ​​are quantized using the following method: First, prepare the reference wafer. Then, use a wafer with output P... ref-out A laser is used to irradiate a prepared reference wafer, and the energy of the reflected light is measured. The measured energy of the reflected light is defined as A. ref and defining reflectivity as B ref Using the definition of reflectivity, the energy absorption rate of the reference wafer is defined as 100-B. ref The amount of energy P absorbed by the reference wafer. AB For P ref-out ×C ref P ref-out Set it as a value set, so that P ABIt has a value for heating a reference wafer to a set temperature.

[0088] Equation B can be used ref ×(A / A ref The reflectivity B of the first wafer is defined as 100 - B. Furthermore, the laser energy absorptivity C of the first wafer is defined as 100 - B. Since the energy absorption of the first wafer and the reference wafer should be the same to heat them to similar conditions, excluding the influence of laser reflection, the amount of energy P absorbed by the first wafer is... AB1 equals P AB According to the embodiment of the present invention, P AB1 Change P out Value, P out The value of the laser at P AB The output when values ​​are the same. P out The quantity is inversely proportional to the value C. (Through P) AB P is calculated by dividing by the measured absorption rate C. out (S42).

[0089] [Table 1] Equations used to calculate the laser output of the first wafer

[0090]

[0091] A processor (not shown) controls a liquid supply unit 390 to apply chemicals to a first wafer and form a liquid film on the top surface of the first wafer. The processor (not shown) uses P... out As an output value, a second laser is used to irradiate the first wafer on which a liquid film has been formed to heat the first wafer and the liquid film.

[0092] According to the described implementation, when the first laser is irradiated, if the energy of the reflected light from the first wafer is greater than a pre-stored reference value, the processor (not shown) will heat the output P of the second laser that heats the first wafer. out Set to greater than the reference output P ref When the energy of the reflected light from the first wafer is less than a pre-stored reference value, the processor (not shown) will heat the output P of the second laser on the first wafer. out Set to less than the reference output P ref .

[0093] In one embodiment, the photodetector 700 detects the reflected light energy in real time while the first wafer is heated and processed by the second laser. A processor (not shown) monitors the detected reflected light energy in real time and adjusts the intensity of the second output as the reflected light energy changes. In one embodiment, the intensity of the second output decreases when the reflected light energy decreases, and increases when the reflected light energy increases.

[0094] Figure 8 To illustrate the setting according to the second embodiment Figure 2 A cross-sectional view of the substrate processing apparatus 300 in the process chamber 260. Figure 8 In the description, with Figure 3 The same construction in the structure will be constructed by Figure 3 Instead of the description. In the second embodiment, the photodetector 700 may be configured to be attached to the interior of the rotating housing 342.

[0095] Figure 9 A cross-sectional view is shown illustrating the operation of a photodetector 700 according to an embodiment of the present invention in a substrate processing apparatus. The photodetector 700 can be combined with a structure such as a stage capable of moving the photodetector 700 to scan reflected light. According to an embodiment, the photodetector 700 can be configured to move from the center of the substrate W in the outer circumferential direction or from the outer circumferential direction to the center of the substrate. As the photodetector 700 moves, the reflected light at various locations on the substrate W can be measured. A processor (not shown) can set the laser output based on the reflected light at each location.

[0096] Figure 10 A cross-sectional view is shown illustrating the operation of a photodetector 700 in a substrate processing apparatus according to another embodiment of the present invention. The photodetector 700 may be configured to be rotatable and to scan reflected light. According to the embodiment, the photodetector 700 can measure the reflected light at various locations on the substrate W as it rotates from a first angle to a second angle. A processor (not shown) can set the laser output based on the reflected light at each location.

[0097] According to various embodiments conceived in this invention, when heating different wafers, even under conditions such as different film types or thicknesses, the wafers can be heated to a desired temperature without individual testing. Furthermore, since the wafers can be heated to the desired temperature, etching performance can be improved.

[0098] The processor (not shown above) controls all operations of the substrate processing apparatus. The processor (not shown) may include a central processing unit (CPU), read-only memory (ROM), and random access memory (RAM). The CPU performs necessary processing, such as etching, based on various schemes stored in its memory areas.

[0099] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0100] Although preferred embodiments of the inventive concept have been illustrated and described to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: A support unit that horizontally supports the substrate; A laser irradiation unit, wherein the laser irradiation unit is used to irradiate the substrate with a laser; A photodetector, the photodetector being used to detect the energy of reflected light from the substrate in a laser beam illuminating the substrate; and processor, and The processor outputs a first laser beam, which is lower than the output of a second laser beam used to heat the substrate. The processor collects the energy of the first reflected light, detected by the photodetector, reflected from the substrate by the first laser. The processor calculates reflectivity and absorptivity based on the energy of the first reflected light, wherein the reflectivity and absorptivity are calculated based on pre-stored reference values, which are values ​​measured using a reference wafer. The energy of the first reflected light is compared with the pre-stored reference value to set the second output of the second laser used to irradiate the substrate to heat the substrate, such that the energy absorbed by the substrate through the second output is set to be the same as the energy absorbed by the reference wafer, and After the energy harvesting of the first reflected light and the setting of the second output are completed, the substrate is irradiated with the second laser of the second output to heat the substrate.

2. The substrate processing apparatus according to claim 1, wherein, The laser irradiation unit irradiates the bottom surface of the substrate with the laser.

3. The substrate processing apparatus according to claim 1, further comprising a liquid supply unit for supplying liquid to the substrate, and in, The processor forms a liquid film on the substrate.

4. The substrate processing apparatus according to claim 1, wherein... If the energy of the first reflected light is greater than the energy of the reflected light at the reference value, then the second output is set to a reference output higher than the reference value. If the energy of the first reflected light is less than the energy of the reflected light at the reference value, then the second output is set to the reference output which is lower than the reference value.

5. The substrate processing apparatus according to claim 1, wherein, The second output is set to be inversely proportional to the absorption rate.

6. The substrate processing apparatus according to claim 1, wherein, The photodetector detects reflected light in real time while the substrate is heated by the second laser, and The processor monitors the detected reflected light in real time, and If the energy of the reflected light changes, the intensity of the second output is adjusted.

7. The substrate processing apparatus according to claim 6, wherein, If the energy of the reflected light becomes smaller, the intensity of the second output is adjusted to be weaker.

8. The substrate processing apparatus according to claim 6, wherein, If the energy of the reflected light becomes greater, the intensity of the second output is adjusted to be stronger.

9. A substrate processing method for heating a substrate by irradiating it with a laser, the substrate processing method comprising: A first laser with a first output is irradiated onto a loaded substrate relative to the substrate using a laser irradiation unit, wherein the first output is lower than the second output of a second laser used to heat the substrate; The energy of the first reflected light from the substrate in the first laser is detected using a photodetector; The reflectivity and absorptivity are calculated based on the energy of the first reflected light, wherein the reflectivity and absorptivity are calculated based on pre-stored reference values, which are values ​​measured using a reference wafer; The energy of the first reflected light is compared with the pre-stored reference value to set the second output of the second laser used to irradiate the substrate to heat the substrate, such that the energy absorbed by the substrate through the second output is set to be the same as the energy absorbed by the reference wafer. After the energy harvesting of the first reflected light and the setting of the second output are completed, the substrate is irradiated with the second laser of the second output to heat the substrate.

10. The substrate processing method according to claim 9, wherein, The laser is irradiated onto the bottom surface of the substrate.

11. The substrate processing method according to claim 9, further comprising: If the energy of the first reflected light is greater than the reference value, then the second output is set to be higher than the output corresponding to the reference value. If the energy of the first reflected light is less than the reference value, then the second output is set to be lower than the output corresponding to the reference value.

12. The substrate processing method according to claim 9, wherein, The second output is set to be inversely proportional to the absorption rate.

13. The substrate processing method according to claim 9, wherein, The photodetector detects reflected light in real time while the substrate is heated by the second laser, and The substrate processing method further includes real-time monitoring of the detected reflected light, and If the energy of the reflected light changes, the intensity of the second output is adjusted.

14. The substrate processing method according to claim 13, wherein, If the energy of the reflected light becomes smaller, the intensity of the second output is adjusted to be weaker.

15. The substrate processing method according to claim 13, wherein, If the energy of the reflected light becomes greater, the intensity of the second output is adjusted to be stronger.

16. A substrate processing apparatus, the substrate processing apparatus comprising: A support unit that horizontally supports the substrate; A liquid supply unit for supplying liquid to the substrate; A laser irradiation unit is used to irradiate the bottom surface of the substrate with a laser. A photodetector, the photodetector being used to detect the energy of reflected light from the substrate in a laser beam illuminating the substrate; and Processor; and The processor outputs a first laser beam, which is lower than the output of a second laser beam used to heat the substrate. The processor collects the energy of the first reflected light, detected by the photodetector, reflected from the substrate by the first laser. The processor calculates reflectivity and absorptivity based on the energy of the first reflected light, wherein the reflectivity and absorptivity are calculated based on pre-stored reference values, which are values ​​measured using a reference wafer. The energy of the first reflected light is compared with the pre-stored reference value to set the second output of the second laser used to irradiate the substrate and heat the substrate, such that the energy absorbed by the substrate through the second output is set to be the same as the energy absorbed by the reference wafer. Based on the energy of the first reflected light, a second output of a second laser is configured to irradiate the substrate and heat it. A liquid film is formed on the substrate, and After the energy harvesting of the first reflected light and the setting of the second output are completed, the substrate is irradiated with the second laser of the second output to heat the substrate.

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