Sensing device and electronic device

Abstract

A sensing device includes a substrate, a first circuit, a second circuit, a first light sensing element, and a second light sensing element. The substrate has a sensing area. The first circuit is disposed on the sensing area of the substrate to sense a fingerprint. The second circuit is disposed on the sensing area of the substrate to identify a living body. The first light sensing element is electrically connected to the first circuit. The second light sensing element is electrically connected to the second circuit. An area of the second light sensing element is greater than an area of the first light sensing element.

Description

Technical Field

[0001] This disclosure relates to a sensing device, and more particularly to a sensing device and electronic device capable of sensing fingerprints and liveness. Background Technology

[0002] Known sensing devices commonly use optical fingerprint recognition technology to identify the fingerprints of objects. However, these devices cannot identify live fingerprints, thus failing to provide effective liveness detection for counterfeit prevention. Therefore, a new circuit structure design is needed to address these issues. Summary of the Invention

[0003] This disclosure provides a sensing device including a substrate, a first circuit, a second circuit, a first photosensitive element, and a second photosensitive element. The substrate has a sensing area. The first circuit is disposed on the substrate and in the sensing area for sensing fingerprints. The second circuit is disposed on the substrate and in the sensing area for identifying a living person. The first photosensitive element is electrically connected to the first circuit. The second photosensitive element is electrically connected to the second circuit. The area of ​​the second photosensitive element is larger than the area of ​​the first photosensitive element.

[0004] This disclosure provides an electronic device including a display panel and a sensing device. The sensing device is disposed on one side of the display panel and includes a substrate, a first circuit, a second circuit, a first photosensitive element, and a second photosensitive element. The substrate has a sensing area. The first circuit is disposed on the sensing area of ​​the substrate and is used to sense fingerprints. The second circuit is disposed on the sensing area of ​​the substrate and is used to identify a living person. The first photosensitive element is electrically connected to the first circuit. The second photosensitive element is electrically connected to the second circuit. The area of ​​the second photosensitive element is larger than the area of ​​the first photosensitive element. Attached Figure Description

[0005] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0006] Figure 1 This is a perspective view of an electronic device according to an embodiment of the present disclosure.

[0007] Figure 2 This is a top view of an electronic device according to an embodiment of the present disclosure.

[0008] Figure 3 This is a schematic diagram of the circuit configuration of an electronic device according to an embodiment of the present disclosure.

[0009] Figure 4 This is a cross-sectional view of a portion of an electronic device according to an embodiment of the present disclosure.

[0010] Figure 5 for Figure 4 The circuit diagram of the circuit and the photosensitive element.

[0011] Figure 6 This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure.

[0012] Figure 7 This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure.

[0013] Figure 8 for Figure 7 The circuit diagram of the circuit and the photosensitive element.

[0014] Figure 9 This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure.

[0015] Figure 10 This is a top view of an electronic device according to another embodiment of the present disclosure.

[0016] Figure 11 This is a schematic diagram of the circuit configuration of an electronic device according to another embodiment of the present disclosure.

[0017] Symbol explanation:

[0018] 100: Electronic devices

[0019] 110: Display panel

[0020] 111: Sensing Area

[0021] 116: Non-sensing area

[0022] 120: Sensing device

[0023] 121: Sensing Block

[0024] 122, 123: Sub-sensing blocks

[0025] 130:Substrate

[0026] 140, 150, 910, 1010: Circuits

[0027] 141: Conductor

[0028] 160, 170, 920, 1020: Photosensitive element

[0029] 180: Optical Collimation Layer

[0030] 1801, 1802, 1803: Insulation layer

[0031] 1804, 1805, 1806: Inorganic layer

[0032] 180a: First light-shielding layer

[0033] 180b: Second light-shielding layer

[0034] 180c: Third light-shielding layer

[0035] 190, 610: Microlens array layer

[0036] 192: Wavelength Selective Layer

[0037] 710: Sub-sensor

[0038] T1, T2, T3: Thin-film transistors

[0039] RST: Reset signal

[0040] SEL: Selection signal

[0041] V1, V2, V3: Voltage

[0042] A: Node

[0043] AA: Display area

[0044] PA: Non-display area

[0045] X, Y, Z: Direction Detailed Implementation

[0046] To make the objectives, features, or advantages of this disclosure more apparent, embodiments are described below in conjunction with the accompanying drawings. For ease of understanding and for the sake of brevity, many of the drawings in this disclosure may depict only a portion of the entire device, and specific elements in the drawings are not drawn to scale.

[0047] This disclosure provides different embodiments to illustrate the technical features of different implementations of this disclosure. The configuration, quantity, and size of the elements in the embodiments are for illustrative purposes only and are not intended to limit this disclosure. Furthermore, if element reference numerals appear repeatedly in the embodiments and accompanying drawings, it is for simplification and does not imply any correlation between different embodiments.

[0048] Furthermore, the use of ordinal numbers such as "first" and "second" in the specification and claims to modify the elements of the claims does not imply or represent any prior ordinal number of the claimed component, nor does it represent the order of one claimed element with another claimed element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a claimed element with a certain name to be clearly distinguished from another claimed element with the same name.

[0049] In this disclosure, features of various embodiments can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with each other.

[0050] The term "comprising" as used throughout the specification and claims is an open-ended term and should therefore be interpreted as "comprising but not limited to".

[0051] Furthermore, "connection" and "coupling" here include any direct and indirect means of connection. Therefore, when a component or film is described as "connected" to another component or film, it can be directly connected to this other component or film, or there may be an intercalated component or film between them. When a component is described as "directly connected" to another component or film, there is no intercalated component or film between them. If a first device in a circuit is described as coupled to a second device, it means that the first device can be directly electrically connected to the second device. When the first device is directly electrically connected to the second device, the first device and the second device are connected only through wires or passive components (such as resistors, capacitors, etc.), and no other electronic components are connected between the first device and the second device.

[0052] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are for reference only to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting this disclosure. In the accompanying drawings, each figure illustrates general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of various films, regions, and / or structures may be reduced or enlarged.

[0053] In this disclosure, the thickness, length, and width can be measured using a planar image obtained from an optical microscope (OM), or the thickness or length can be measured using a cross-sectional image obtained from a scanning electron microscope (SEM), but are not limited thereto. Furthermore, any two values ​​or directions used for comparison may contain a certain degree of error.

[0054] It should be understood that although the terms first, second, etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, and / or part from another element, component, region, layer, and / or part. Therefore, without departing from the scope of this disclosure, the first element, first component, first region, first layer, or first part discussed below may also be referred to as a second element, second component, second region, second layer, or second part.

[0055] In addition, phrases such as "within the range of the first and second values" or "between the first and second values" indicate that the range includes the first value, the second value, and other values ​​in between.

[0056] The terms “approximately,” “equal to,” “same,” “substantially,” or “roughly” typically mean falling within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0057] Figure 1 This is a perspective view of an electronic device according to an embodiment of the present disclosure. Figure 2 This is a top view of an electronic device according to an embodiment of the present disclosure. Figure 3 This is a schematic diagram of the circuit configuration of an electronic device according to an embodiment of the present disclosure. Figure 4 This is a cross-sectional view of a portion of an electronic device according to an embodiment of the present disclosure. Figure 5 for Figure 4 The circuit diagram includes the circuit of the photosensitive element. In this embodiment, the electronic device 100 may include a device with sensing function, but this disclosure is not limited thereto. In one embodiment, the electronic device may include liquid crystal (LC), organic light emitting diode (OLED), inorganic light emitting diode (LED), quantum dot (QD), fluorescent material, phosphorescent material, other suitable materials, or combinations of the above materials, but this disclosure is not limited thereto. Inorganic light emitting diodes may include, for example, mini light emitting diodes (mini LED), micro light emitting diodes (micro LED), or quantum dot light emitting diodes (QLED / QDLED), but this disclosure is not limited thereto.

[0058] In some embodiments, the electronic device may be a touch device, a curved device, a titled device, or a free-shape device, and may also be a bendable or flexible titled device, but is not limited thereto.

[0059] It should be noted that the electronic device can be any of the aforementioned arrangements and combinations, but is not limited thereto. Furthermore, the electronic device can be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device may include peripheral systems such as a drive system, control system, light source system, and shelving system to support the display device.

[0060] In one embodiment, the electronic device 100 may have fingerprint and liveness detection capabilities, but this disclosure is not limited thereto. Please refer to... Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The electronic device 100 may include at least a display panel 110 and a sensing device 120.

[0061] In some embodiments, the electronic device 100 may include a display panel 110, which may include a display area AA and a non-display area PA. The display area AA may be a region with display functionality and may include display pixels, but is not limited thereto. The non-display area PA is adjacent to the display area AA and may be a region without display functionality. In some embodiments, the display panel 110 may include a rigid substrate or a flexible substrate. For example, the material of the display panel 110 may include glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable materials, or combinations thereof, but is not limited thereto.

[0062] Furthermore, the display panel 110 may include a sensing area 111 and a non-sensing area 116. The sensing area 111 may be an area with sensing functionality; for example, the sensing area 111 may be an area that senses changes in light to identify fingerprints (and / or liveness), but is not limited thereto. The non-sensing area 116 may be an area adjacent to the sensing area 111 and may not have sensing functionality; for example, compared to the sensing area 111, the non-sensing area 116 may not have the function of identifying fingerprints (and / or liveness). A sensing device 120 is disposed on one side of the display panel 110 (e.g., below the display panel 110), and the sensing device 120 may be disposed corresponding to the sensing area 111, such as... Figure 1 As shown. In this embodiment, the sensing device 120 may include at least a substrate 130, a circuit 140, a circuit 150, a photosensitive element 160, and a photosensitive element 170.

[0063] In some embodiments, the sensing area 111 may overlap with a portion of the display area AA in the normal direction of the surface of the display panel 110, and the non-sensing area 116 may overlap with another portion of the display area AA in the normal direction of the surface of the display panel 110 (e.g., Figure 1 In other embodiments, the sensing area 111 and the display area AA may substantially completely overlap. Furthermore, it should be noted that the term "corresponding" as used in this specification may mean at least partial overlap in the normal direction (e.g., the Z direction) of the surface of the display panel 110.

[0064] The substrate 130 may have a sensing block 121 or a non-sensing block (not shown), such as Figure 1 or Figure 4 As shown, sensing block 121 may correspond to sensing area 111 of display panel 110. Furthermore, sensing block 121 may also include sub-sensing blocks 122 and 123, but this disclosure is not limited thereto. In some embodiments, substrate 130 may include a rigid substrate or a flexible substrate. For example, the material of substrate 130 may include glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable materials, or combinations thereof, but is not limited thereto.

[0065] Circuit 140 can be disposed on substrate 130 and in sensing block 121 for fingerprint sensing. That is, circuit 140 can sense the fingerprint of an object touching sensing block 121 of display panel 110. Furthermore, circuit 140 can be disposed in sub-sensing block 122 of sensing block 121. That is, sub-sensing block 122 can be a fingerprint sensing area.

[0066] Circuit 150 can be disposed on substrate 130 and in sensing block 121 for identifying living objects. Circuit 150 can perform liveness detection on objects touching sensing block 121 of display panel 110 to identify whether the object is a living object. Furthermore, circuit 150 can be placed in sub-sensing block 123 of sensing block 121. That is, sub-sensing block 123 can be a liveness sensing area.

[0067] Photosensitive element 160 or photosensitive element 170 may include a photodiode, a phototransistor, a metal-semiconductor-metal photodetector (MSM photodetector), or any suitable photosensitive element, but is not limited thereto. For clarity, photosensitive element 160 in this embodiment is described using a photodiode as an example. Photosensitive element 160 may be electrically connected to circuit 140. Photosensitive element 170 may be electrically connected to circuit 150. In this embodiment, the area of ​​photosensitive element 170 may be larger than the area of ​​photosensitive element 160, such as... Figure 3 As shown. In some embodiments, the area ratio of the photosensitive element 170 to the area of ​​the photosensitive element 160 is between 1 and 40 (1 ≤ area ratio ≤ 40), for example 1.3, 1.8, 10, 20, 30, but this disclosure is not limited thereto. That is, by increasing the area of ​​the photosensitive element 170, the magnitude of the photocurrent signal can be increased, thereby increasing the accuracy of the circuit 150 in identifying a living person.

[0068] In some embodiments, the area of ​​a photosensitive element (e.g., photosensitive element 160 or photosensitive element 170) can be defined as the area enclosed by the outline of the photosensitive element. For example, the area of ​​the photosensitive element can be the area of ​​the light-receiving surface of the photosensitive element, but is not limited thereto. In some embodiments, if the surface of the photosensitive element (e.g., photosensitive element 160 or photosensitive element 170) cannot be fully exposed, the area may not be measurable using the above definition. Therefore, a width can be taken on any cross-section of the photosensitive element in a first direction (e.g., the X direction) parallel to the extension direction of the scan line, and a length can be taken on any cross-section of the photosensitive element in a second direction (e.g., the Y direction) perpendicular to the extension direction of the scan line. The product of the length and the width can then be considered as the area of ​​the photosensitive element (e.g., photosensitive element 160 or photosensitive element 170). It should be noted that to compare the areas of two different photosensitive elements, the area can be obtained by taking the length and width at corresponding points on the two photosensitive elements and then multiplying them. For example, to compare the areas of two different photosensitive elements, one can take a point on one photosensitive element, measure its width in a cross-section along a first direction (e.g., the X direction) that is approximately parallel to the direction of the scan line extension, and measure its width in a cross-section along the same direction at the corresponding point on the other photosensitive element. Similarly, one can take a point on one photosensitive element, measure its length in a cross-section along a second direction (e.g., the Y direction) that is approximately parallel to the direction of the data line extension, and measure its length in a cross-section along the same direction at the corresponding point on the other photosensitive element, but this is not a limitation.

[0069] like Figure 4As shown, in the sub-sensing block 122, the sensing device 120 may further include a collimation layer 180 and a microlens array layer 190. In the sub-sensing block 122, a circuit 140 may be disposed on the substrate 130. A photosensitive element 160 may be disposed on the circuit 140. The collimation layer 180 may be disposed on the photosensitive element 160. The microlens array layer 190 may be disposed on the collimation layer 180. The display panel 110 may be disposed on the microlens array layer 190. In this embodiment, the collimation layer 180 is used to reduce crosstalk. Additionally, the microlens array layer 190 is used to increase the angle of incident light reception and focus the incident light to increase the magnitude of the photocurrent signal per pixel. In some embodiments, the microlens array layer 190 may include at least one microlens, but this disclosure is not limited thereto.

[0070] In addition, such as Figure 4 As shown, in the sub-sensing block 123, the sensing device 120 may further include a wavelength selection layer 192. In the sub-sensing block 123, circuitry 150 may be disposed on the substrate 130. A photosensitive element 170 may be disposed on the circuitry 150. In other embodiments, in the sub-sensing block 123, the sensing device 120 may further include a collimation layer 180, which may be disposed on the photosensitive element 170 (not shown). The wavelength selection layer 192 may be disposed on the photosensitive element 170 and located within the collimation layer 180 (not shown). Additionally, in other embodiments, a filler layer (not shown) may be disposed between the collimation layer 180 and the display panel 110. A portion of the filler layer may be disposed between two adjacent microlenses to reduce the impact on incident light reception. In some embodiments, the filler layer may be, for example, a transparent material, but this disclosure is not limited thereto.

[0071] In some embodiments, the light collimation layer 180 may include a plurality of insulating layers (1801, 1802, 1803), a plurality of inorganic layers (1804, 1805, 1806), a first light-shielding layer 180a, a second light-shielding layer 180b, and a third light-shielding layer 180c. The first light-shielding layer 180a is disposed adjacent to the photosensitive element 160, the third light-shielding layer 180c is disposed adjacent to the display panel 110, and the second light-shielding layer 180b is disposed between the first light-shielding layer 180a and the third light-shielding layer 180c. The light-shielding layers (180a, 180b, 180c) can be disposed within the inorganic layers (1804, 1805, 1806). In other words, a portion of the inorganic layers (1804, 1805, 1806) can be disposed between the light-shielding layers (180a, 180b, 180c) and the insulating layers (1801, 1802, 1803). Furthermore, the first light-shielding layer 180a, the second light-shielding layer 180b, and the third light-shielding layer 180c have openings, and some inorganic layers (1804, 1805, 1806) can be disposed in the openings. The openings of the first light-shielding layer 180a, the second light-shielding layer 180b, and the third light-shielding layer 180c correspond to the microlenses of the microlens layer 190. The opening width of the first light-shielding layer 180a is smaller than the opening width of the second light-shielding layer 180b, and the opening width of the second light-shielding layer 180b is smaller than the opening width of the third light-shielding layer 180c, but this is not a limitation. The closer to the photosensitive element 160, the smaller the opening width of the light-shielding layers (180a, 180b, 180c), which can concentrate the incident light or reduce the phenomenon of light crosstalk.

[0072] In some embodiments, the material of the insulating layer (1801, 1802, 1803) may include, for example, organic or inorganic materials, but is not limited thereto. The material of the inorganic layer (1804, 1805, 1806) may include, for example, silicon oxide (SiOx), silicon nitride (SiNx), other suitable materials, or combinations thereof, but is not limited thereto. The material of the light-shielding layer (180a, 180b, 180c) may include, for example, metal or other suitable light-shielding materials, but is not limited thereto.

[0073] Furthermore, in some embodiments, the wavelength selection layer 192 is, for example, a red filter layer, but this disclosure is not limited thereto. That is, the wavelength selection layer 192 can filter the incident light to allow red light to pass through the wavelength selection layer 192, so that the wavelength selection layer 192 transmits the red light to the photosensitive element 170. In addition, the wavelength range of the aforementioned red light is, for example, between 600 nanometers (nm) and 700 nanometers (600nm ≤ wavelength ≤ 700nm), such as 650 nm, 660 nm, and 670 nm, but this disclosure is not limited thereto.

[0074] In some embodiments, the wavelength selection layer 192 is, for example, a Bragg reflector layer, but this disclosure is not limited thereto. Furthermore, the Bragg reflector layer can be composed of multiple film layers, and can be a superposition of organic and inorganic materials. In this way, the Bragg reflector layer can also filter incident light to allow light of a specific wavelength to pass through it. Additionally, the aforementioned specific wavelength of light is, for example, red light, and the wavelength range of red light is, for example, between 600 nm and 700 nm (600 nm ≤ wavelength ≤ 700 nm), such as 650 nm, 660 nm, and 670 nm, but this disclosure is not limited thereto. In this way, through the circuit 150 and the photosensitive element 170 in conjunction with the wavelength selection layer 192, the oxygenated hemoglobin of an object can be detected to achieve the effect of live fingerprint recognition, thereby performing substantial liveness detection.

[0075] In addition, the sensing device 120 can also adjust the bandgap of the photosensitive element 170 by changing the material or process parameters of the photosensitive element, thereby changing the photoelectric characteristics of the photosensitive element 170. In this way, the photosensitive element 170 can effectively absorb the light generated by the wavelength selective layer 192, thereby increasing the effect of liveness detection.

[0076] In this embodiment, a light source can be provided through the display panel 110 so that the sensing device 120 can perform fingerprint sensing and liveness detection. For example, in some embodiments, when an object touches the display panel 110, the display panel 110 can first provide a light source, and this light source is not limited; for example, the light source can be blue light, green light, red light, white light, etc. The light emitted by the light source will be reflected by the object and enter the sub-sensing block 122 and sensing block 123 of the sensing device 120 and be transmitted to the photosensitive element 160 and photosensitive element 170, so that the circuit 140 can perform fingerprint sensing on the object and the circuit 150 can detect the oxygenated hemoglobin of the object to perform liveness detection on the object.

[0077] In this embodiment, as Figure 2 As shown, the density of circuit 150 in sensing block 121 can be less than the density of circuit 140 in sensing block 121. Furthermore, density is defined by the number of circuits 140 and 150, but this disclosure is not limited to this. For example, multiple scan lines SL and multiple data lines DL are interleaved to form an array. In a 2×2 array area, there is one circuit 150 and two circuits 140, therefore the density of circuit 150 is less than the density of circuit 140. Similarly, in a 3×3 array area, there are three circuits 150 and four circuits 140, therefore the density of circuit 150 is less than the density of circuit 140. Furthermore, in a 4×4 array area, there are four circuits 150 and eight circuits 140, therefore the density of circuit 150 is less than the density of circuit 140. And so on.

[0078] In this embodiment, as Figure 5 As shown, circuit 140 may include thin-film transistors T1, T2, and T3. Furthermore, photosensitive element 160 is electrically connected to circuit 140. The thin-film transistors referred to in this invention may include switching transistors, driving transistors, reset transistors, transistor amplifiers, or other suitable thin-film transistors to form circuit 140. Specifically, according to some embodiments, thin-film transistor T1 may be a reset transistor, thin-film transistor T2 may be a transistor amplifier, and thin-film transistor T3 may be a switching transistor, but this disclosure is not limited thereto.

[0079] In detail, circuit 140 may include signal lines coupled to thin-film transistors, such as current signal lines, voltage signal lines, high-frequency signal lines, and low-frequency signal lines, and the signal lines may transmit element operating voltage (VDD), ground terminal voltage (VSS), or drive element terminal voltage, and this disclosure is not limited thereto.

[0080] Thin-film transistor T1 may have a gate terminal, a first terminal, and a second terminal. The gate terminal of thin-film transistor T1 receives a reset signal RST. The first terminal of thin-film transistor T1 receives a voltage V1. In this embodiment, thin-film transistor T1 may be an N-type thin-film transistor, and the first and second terminals of thin-film transistor T1 may be, for example, the drain and source terminals, but this disclosure is not limited thereto. In some embodiments, thin-film transistor T1 may also be a P-type thin-film transistor, but this disclosure is not limited thereto. In addition, in this embodiment, the voltage V1 is, for example, the system voltage, but this disclosure is not limited thereto.

[0081] Photosensitive element 160 has a first terminal and a second terminal. The first terminal of photosensitive element 160 is electrically connected to the second terminal of thin-film transistor T1 to form, for example, node A. The second terminal of photosensitive element 160 receives voltage V2. In some embodiments, the first terminal of photosensitive element 160 is, for example, a cathode, and the second terminal of photosensitive element 160 is, for example, an anode, but this disclosure is not limited thereto. Additionally, voltage V2 is, for example, a ground voltage, but this disclosure is not limited thereto.

[0082] Thin-film transistor T2 may have a gate terminal, a first terminal, and a second terminal. The gate terminal of thin-film transistor T2 is electrically connected to the second terminal of thin-film transistor T1. The first terminal of thin-film transistor T2 receives voltage V3. In this embodiment, thin-film transistor T2 may be an N-type thin-film transistor, and the first and second terminals of thin-film transistor T2 may be, for example, the drain and source terminals, but this disclosure is not limited thereto. In some embodiments, thin-film transistor T2 may also be a P-type thin-film transistor, but this disclosure is not limited thereto. According to some embodiments, thin-film transistor T2 is used to amplify the voltage at node A to generate an amplified current. In addition, in this embodiment, voltage V3 is, for example, the system voltage, but this disclosure is not limited thereto. Furthermore, thin-film transistor T2 may act as a source follower, but this disclosure is not limited thereto.

[0083] Thin-film transistor T3 may have a gate terminal, a first terminal, and a second terminal. The gate terminal of thin-film transistor T3 receives a selection signal SEL. The first terminal of thin-film transistor T3 is electrically connected to the second terminal of thin-film transistor T2. The second terminal of thin-film transistor T3 is electrically connected to wire 141. In this embodiment, thin-film transistor T3 may be an N-type thin-film transistor, and the first and second terminals of thin-film transistor T3 may be, for example, the drain and source terminals, but this disclosure is not limited thereto. In some embodiments, thin-film transistor T3 may also be a P-type thin-film transistor, but this disclosure is not limited thereto. When thin-film transistor T3 is turned on, and the first terminal of thin-film transistor T3 is connected to wire 141, an amplified current can be output to wire 141; when thin-film transistor T3 is turned off, and the first terminal of thin-film transistor T3 is disconnected from wire 141, no amplified current is output to wire 141.

[0084] Furthermore, circuit 150 may be the same as or similar to circuit 140, and may also include thin-film transistors T1, T2, and T3, and photosensitive element 170 may also be the same as or similar to photosensitive element 160, such as... Figure 5 As shown. Accordingly, the connection relationship between thin-film transistors T1, T2, and T3 in circuit 150 and photosensitive element 170 can also be referred to. Figure 5 The embodiments are described in detail here, so they will not be repeated here.

[0085] Figure 6 This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure. Figure 6 The embodiments are generally similar to Figure 4 The embodiments are similar. Figure 6 and Figure 4 For identical or similar components or parts, please refer to Figure 4 The embodiments are as described above, and will not be repeated here. Figure 6In this context, the sensing device 120 may further include a microlens array layer 610, and the microlens array layer 610 may be disposed on the photosensitive element 170. Furthermore, as... Figure 6 As shown, the microlens array layer 610 is disposed on the wavelength selection layer 192 and is located between the wavelength selection layer 192 and the display panel 110. Furthermore, the microlens array layer 610 and... Figure 4 The microlens array layer 190 is the same as or similar to that of the microlens array layer 190, which can be referenced. Figure 4 The embodiments are described in detail here, so they will not be repeated here.

[0086] Figure 7 This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure. Figure 7 The embodiments are generally similar to Figure 6 The embodiments are similar. Figure 7 and Figure 6 For identical or similar components or parts, please refer to Figure 6 The embodiments are as described above, and will not be repeated here. Figure 7 In this circuit, the photosensitive element 160 may include multiple sub-photosensitive elements 710, that is, the photosensitive element 160 is divided into multiple sub-photosensitive elements 710. The sub-photosensitive elements 710 are connected in parallel and electrically connected to the circuit 140, such as... Figure 8 As shown. Further, the sub-photosensor 710 has a first terminal and a second terminal. The first terminal of the sub-photosensor 710 is electrically connected to the second terminal of the thin-film transistor T1 to form, for example, node A. The second terminal of the sub-photosensor 710 receives a voltage V2. Additionally, Figure 8 Implementation examples and Figure 5 The embodiments are the same or similar, and can be referred to. Figure 5 The embodiments are described in detail here, so they will not be repeated here.

[0087] In some embodiments, the number of sub-photosensitive elements 710 may correspond to the number of microlenses in the microlens array layer 190, but this disclosure is not limited thereto. For example, when the number of microlenses in the microlens array layer 190 is 4, the number of sub-photosensitive elements 710 is 4. When the number of microlenses in the microlens array layer 190 is 2, the number of sub-photosensitive elements 710 is 2. When the number of microlenses in the microlens array layer 190 is 5, the number of sub-photosensitive elements 710 is 5. And so on.

[0088] In addition, in this embodiment, the sub-photosensitive element 710 has a smaller area, which can reduce the parasitic capacitance generated by the sub-photosensitive element 710, thereby increasing the conversion gain or improving the conversion efficiency of the signal, and thus increasing the accuracy of fingerprint sensing.

[0089] Figure 9This is a cross-sectional view of a portion of an electronic device according to another embodiment of the present disclosure. In this embodiment, the sensing device 120 may include a substrate 130, a circuit 910, a photosensitive element 920, and a microlens array layer 190.

[0090] The substrate 130 may have a sensing block 121. A circuit 910 is disposed in the sensing block 121 of the substrate 130 for sensing fingerprints or identifying a live object. A photosensitive element 1020 is disposed on the circuit 910 and electrically connected to the circuit 910. Multiple insulating layers may be disposed between the photosensitive element 1020 and the microlens array layer 190, and a display panel 110 is disposed on the microlens array layer 190.

[0091] exist Figure 9 In this embodiment, a first light source and a second light source can be provided through the display panel 110 so that the sensing device 120 can perform fingerprint sensing and liveness detection respectively. For example, in some embodiments, when an object touches the display panel 110, the display panel 110 can first provide a first light source, and the first light source is not limited; for example, the first light source can be blue light, green light, red light, white light, etc. The first light source is reflected by the object into the sensing device 120 and transmitted to the photosensitive element 920, so that the circuit 910 can perform fingerprint sensing on the object. Then, the display panel 110 can provide a second light source, wherein the second light source is, for example, red light. The second light source is reflected by the object into the sensing device 120 and transmitted to the photosensitive element 920, so that the circuit 910 can detect the oxygenated hemoglobin of the object to perform liveness detection on the object.

[0092] In some embodiments, when an object touches the display panel 110, the display panel 110 may first provide a second light source, such as red light. The second light source is reflected by the object into the sensing device 120 and transmitted to the photosensitive element 920, enabling the circuit 910 to detect the oxygenated hemoglobin of the object for liveness detection. Next, the display panel 110 may provide a first light source, which is not limited to any particular type, such as blue light, green light, or white light. The first light source is reflected by the object into the sensing device 120 and transmitted to the photosensitive element 920, enabling the circuit 910 to perform fingerprint sensing on the object.

[0093] Furthermore, circuit 910 may be the same as or similar to circuit 140, and may also include thin-film transistors T1, T2, and T3, and photosensitive element 920 may also be the same as or similar to photosensitive element 160. Accordingly, the connection relationship between thin-film transistors T1, T2, and T3 in circuit 910 and photosensitive element 920 can be referenced. Figure 5 The embodiments are described in detail here, so they will not be repeated here.

[0094] Figure 10 This is a top view of an electronic device according to another embodiment of the present disclosure. Figure 11 This is a schematic diagram of the circuit configuration of an electronic device according to another embodiment of the present disclosure. Figure 10 and Figure 11 The embodiments are generally Figure 2 and Figure 3 The embodiments are similar. Figure 10 and Figure 11 and Figure 2 and Figure 3 For identical or similar components or parts, please refer to Figure 2 and Figure 3 The embodiments are as described above, so they will not be repeated here.

[0095] In this embodiment, the electronic device 100 further includes a circuit 1010 and a photosensitive element 1020. The circuit 1010 is disposed on a substrate (e.g., Figure 4 On substrate 130), a photosensitive element 1020 is used to sense ambient light. The photosensitive element 1020 is electrically connected to circuit 1010. Furthermore, the manner in which circuit 1010 and photosensitive element 1020 are disposed on the substrate can be the same as or similar to the manner in which circuit 140 and photosensitive element 160 are disposed on substrate 130, as can be found in [reference]. Figure 4 The embodiments are as described above, so they will not be repeated here.

[0096] In some embodiments, the area of ​​photosensitive element 1020 is larger than the area of ​​photosensitive element 160, such as... Figure 11 As shown. In other words, by increasing the area of ​​the photosensitive element 1020, the magnitude of the photocurrent signal can be increased, thereby increasing the accuracy of the circuit 1010 in sensing ambient light. In this way, the circuit 1010 can sense ambient light, enabling the electronic device 100 to distinguish or exclude ambient light during fingerprint sensing or liveness detection, thereby increasing the accuracy of fingerprint sensing or liveness detection.

[0097] It should be noted that the photosensitive element 1020 and the display panel 110 may not have a wavelength selection layer.

[0098] Furthermore, circuit 1010 may be the same as or similar to circuit 140, and may also include thin-film transistors T1, T2, and T3, and photosensitive element 1020 may also be the same as or similar to photosensitive element 160. Accordingly, the connection relationship between thin-film transistors T1, T2, and T3 in circuit 1010 and photosensitive element 1020 can be referenced. Figure 5 The description of the embodiments is omitted here. Furthermore, the configuration of the circuit 1010 and the photosensitive element 1020 in this embodiment is one example of the present disclosure. In some embodiments, the circuit 1010 and the photosensitive element 1020 can be disposed at other locations in the sensing area, achieving the same effect.

[0099] In summary, the sensing device and electronic device of this disclosure embodiment are configured with a first circuit disposed on the sensing area of ​​a substrate for sensing fingerprints. A second circuit is disposed on the sensing area of ​​the substrate for identifying liveness. A first photosensitive element is electrically connected to the first circuit. A second photosensitive element is electrically connected to the second circuit. The area of ​​the second photosensitive element is larger than the area of ​​the first photosensitive element. In this way, it can achieve both fingerprint and liveness recognition effects, increase the accuracy of liveness recognition, or perform liveness anti-counterfeiting recognition.

[0100] While this disclosure is provided above with reference to embodiments, it is not intended to limit the scope of this disclosure. Any person skilled in the art can replace, recombine, mix, or make some adjustments, combinations, modifications and refinements to the features of several different embodiments to complete other embodiments without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims.

Claims

1. A sensing device, characterized in that, include: A substrate having a sensing area; Multiple first circuits are disposed on the substrate and in the sensing area for sensing fingerprints; Multiple second circuits are disposed on the substrate and in the sensing area to identify living individuals; Multiple first photosensitive elements are electrically connected to the multiple first circuits and disposed in the sensing area; as well as Multiple second photosensitive elements are electrically connected to the multiple second circuits and disposed in the sensing area; In this sensing area, the area of ​​one of the plurality of second photosensitive elements is larger than the area of ​​one of the plurality of first photosensitive elements; In this sensing area, the number of the plurality of second circuits is less than the number of the plurality of first circuits.

2. The sensing device as claimed in claim 1, characterized in that, The area of ​​one of the plurality of second photosensitive elements is in a ratio of 1 to 40 to the area of ​​one of the plurality of first photosensitive elements.

3. The sensing device as claimed in claim 1, characterized in that, It also includes a wavelength selection layer disposed on the plurality of second photosensitive elements.

4. The sensing device as described in claim 3, characterized in that, The wavelength selection layer is a red filter layer.

5. The sensing device as claimed in claim 3, characterized in that, The wavelength-selective layer is a Bragg reflector.

6. The sensing device as claimed in claim 1, characterized in that, It also includes a microlens array layer disposed on the plurality of second photosensitive elements.

7. The sensing device as claimed in claim 1, characterized in that, Also includes: A third circuit, disposed on the substrate, is used to sense ambient light; and A third photosensitive element is electrically connected to the third circuit.

8. The sensing device as claimed in claim 7, characterized in that, The area of ​​the third photosensitive element is larger than the area of ​​one of the plurality of first photosensitive elements.

9. The sensing device as claimed in claim 1, characterized in that, One of the plurality of first photosensitive elements includes a plurality of sub-photosensitive elements, and the plurality of sub-photosensitive elements are connected in parallel.

10. An electronic device, characterized in that, include: A display panel; as well as A sensing device is disposed on one side of the display panel, wherein the sensing device includes: A substrate having a sensing area; Multiple first circuits are disposed on the substrate and in the sensing area for sensing fingerprints; Multiple second circuits are disposed on the substrate and in the sensing area to identify living individuals; Multiple first photosensitive elements are electrically connected to the multiple first circuits and disposed in the sensing area; and Multiple second photosensitive elements are electrically connected to the multiple second circuits and disposed in the sensing area; In this sensing area, the area of ​​one of the plurality of second photosensitive elements is larger than the area of ​​one of the plurality of first photosensitive elements; In this sensing area, the number of the plurality of second circuits is less than the number of the plurality of first circuits.

11. The electronic device as claimed in claim 10, characterized in that, The area of ​​one of the plurality of second photosensitive elements is in a ratio of 1 to 40 to the area of ​​one of the plurality of first photosensitive elements.

12. The electronic device as claimed in claim 10, characterized in that, The sensing device also includes a wavelength selection layer disposed on the plurality of second photosensitive elements.

13. The electronic device as claimed in claim 12, characterized in that, The wavelength selection layer is a red filter layer.

14. The electronic device as claimed in claim 12, characterized in that, The wavelength-selective layer is a Bragg reflector.

15. The electronic device as claimed in claim 10, characterized in that, The sensing device also includes a microlens array layer disposed on the plurality of second photosensitive elements.

16. The electronic device as claimed in claim 10, characterized in that, The sensing device also includes: A third circuit, disposed on the substrate, is used to sense ambient light; and A third photosensitive element is electrically connected to the third circuit.

17. The electronic device as claimed in claim 16, characterized in that, The area of ​​the third photosensitive element is larger than the area of ​​one of the plurality of first photosensitive elements.

18. The electronic device as claimed in claim 10, characterized in that, One of the plurality of first photosensitive elements includes a plurality of sub-photosensitive elements, and the plurality of sub-photosensitive elements are connected in parallel.

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