Substrate processing apparatus and substrate processing method

Abstract

Disclosed are a substrate processing apparatus and a substrate processing method. The substrate processing apparatus can include a drain tank for receiving a solution drained from a predetermined process, a drain line for draining the solution from the drain tank to the outside, and at least one injection member for supplying a gas and / or a liquid into the drain tank to block air flowing into the drain tank and / or adjust humidity in the drain tank. The substrate processing apparatus and the substrate processing method of the present invention can block backflow of precipitates through the drain line and the drain tank while suppressing generation of the precipitates caused by the processing solution and easily performing the processing.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2021-0102996, filed with the Korean Patent Office on August 5, 2021. Technical Field

[0002] The exemplary embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. More specifically, the exemplary embodiments of the present invention relate to a substrate processing apparatus capable of performing an etching process using an etching solution containing a phosphoric acid solution containing silicon dioxide, and a substrate processing method utilizing the substrate processing apparatus. Background Technology

[0003] In the manufacturing processes of semiconductor devices or display devices, a process for etching layers formed on the substrate is typically performed to form circuit patterns on the substrate. When a nitride layer is formed on the substrate, a phosphoric acid solution containing silicon dioxide can be used as the etching solution.

[0004] When the nitride layer is etched using a phosphoric acid solution containing the silica, silica-induced precipitates may be generated within the substrate processing apparatus. In particular, these precipitates may primarily form within the drain tank of the substrate processing apparatus. The deposits formed within the drain tank may migrate from the drain tank to pipelines and valves through which various solutions flow in the substrate processing apparatus, potentially causing blockages or damage to these pipelines and valves. Summary of the Invention

[0005] Technical issues

[0006] One aspect of the present invention provides a substrate processing apparatus that can effectively suppress the formation of precipitates from the processing solution in the drain tank and drain line.

[0007] Another aspect of the present invention provides a substrate processing method that can effectively suppress the formation of precipitates from the processing solution in the drain tank and drain line.

[0008] Another aspect of the present invention provides a substrate processing apparatus that can effectively suppress the formation of precipitates in the drain tank and drain line caused by contact between silicon dioxide and air.

[0009] Technical solution

[0010] According to one aspect of the present invention, a substrate processing apparatus is provided, comprising: a drain tank for containing a processing solution discharged from a predetermined process; a drain line for discharging the processing solution from the drain tank to the outside; and at least one spraying component for supplying gas and / or liquid into the drain tank to block air flowing into the drain tank and / or regulate the humidity inside the drain tank.

[0011] In some exemplary embodiments, the substrate processing apparatus may include a plurality of spraying components arranged substantially at predetermined intervals on the upper part of the drain tank. The plurality of spraying components may spray the gas and / or the liquid uniformly into the drain tank, directed toward the lower part of the drain tank.

[0012] In some exemplary embodiments, the at least one injection component may include: a three-way valve for connecting a first path through which the gas is supplied and a second path through which the liquid is supplied, or for blocking either the first path or the second path.

[0013] In some exemplary embodiments, the at least one injection component may supply the gas to the drain tank when the predetermined process is interrupted, or when the treatment solution is completely discharged from the drain tank and the drain line. When the predetermined process is restarted, the at least one injection component may supply both the gas and the liquid to the drain tank.

[0014] In some exemplary embodiments, the substrate processing apparatus may further include: a first adjustment component for adjusting the amount of gas supplied from the at least one injection component to the drain tank when the internal pressure of the drain tank exceeds a preset pressure range during the supply of gas from the at least one injection component to the drain tank.

[0015] The first adjusting component can interrupt the supply of gas from the at least one injection component to the drain tank when the internal pressure of the drain tank is substantially greater than the maximum value of the preset pressure.

[0016] The first adjusting component is capable of adjusting the amount of gas supplied from the at least one injection component to the drain tank, such that when the air flows into the drain tank via the drain line, the internal pressure of the drain tank is substantially greater than the pressure of the air.

[0017] In some exemplary embodiments, the substrate processing apparatus may further include: a second adjustment component for adjusting the amount of liquid supplied by the at least one spraying component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range during the supply of liquid from the at least one spraying component to the drain tank.

[0018] In some exemplary embodiments, the gas may include air, nitrogen, or a mixture thereof. The liquid may include deionized water, phosphoric acid solution, hydrofluoric acid solution, or a mixture thereof.

[0019] According to another aspect of the present invention, a substrate processing method is provided, comprising: a step of receiving a processing solution discharged from a predetermined process in a drain tank; a step of discharging the processing solution from the drain tank to the outside through a drain line; and a step of supplying gas and / or liquid into the drain tank from at least one spraying component to block air flowing into the drain tank and / or regulate the humidity inside the drain tank.

[0020] In some exemplary embodiments, a plurality of spraying components arranged substantially at predetermined intervals on the upper part of the drain tank can uniformly spray the gas and / or the liquid toward the lower part of the drain tank.

[0021] In some exemplary embodiments, when the predetermined process is interrupted, or when the treatment solution is completely drained from the drain tank and the drain line, the gas can be supplied to the drain tank from the at least one spraying component. Furthermore, when the predetermined process is restarted, both the gas and the liquid can be supplied to the drain tank from the at least one spraying component.

[0022] In some exemplary embodiments, the substrate processing method may further include: measuring the internal pressure of the drain tank; adjusting the amount of gas supplied from the at least one injection component to the drain tank when the internal pressure of the drain tank exceeds a preset pressure range; interrupting the supply of gas from the at least one injection component to the drain tank when the internal pressure of the drain tank is substantially greater than the maximum value of the preset pressure; and adjusting the amount of gas supplied from the at least one injection component to the drain tank such that the internal pressure of the drain tank is substantially greater than the pressure of the air when the air flows into the drain tank from the drain line.

[0023] In some exemplary embodiments, the substrate processing method may further include: measuring the internal humidity of the drain tank; and adjusting the amount of liquid supplied from the at least one spraying component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range.

[0024] In some exemplary embodiments, the gas may include air, nitrogen, or a mixture thereof. The liquid may include deionized water, phosphoric acid solution, hydrofluoric acid solution, or a mixture thereof.

[0025] According to another aspect of the present invention, a substrate processing apparatus is provided, comprising: a drain tank for containing the etching solution discharged during an etching process using an etching solution comprising a phosphoric acid solution containing silica; a drain line for discharging the etching solution from the drain tank to the outside; and at least one spraying component for blocking contact between silica in the phosphoric acid solution and air and / or adjusting the humidity within the drain tank. The at least one spraying component may supply a gas comprising air, nitrogen, or a mixture thereof to the drain tank and / or supply a liquid comprising deionized water, a phosphoric acid solution, a hydrofluoric acid solution, or a mixture thereof to the drain tank to suppress the formation of precipitates caused by the silica.

[0026] In some exemplary embodiments, the substrate processing apparatus may include a plurality of spraying components arranged substantially at predetermined intervals above the drain tank. The spraying components may uniformly spray the gas and / or the liquid into the drain tank toward the lower part of the drain tank.

[0027] In some exemplary embodiments, the at least one injection component can supply the gas into the drain tank when the predetermined process is interrupted, or when the solution is completely discharged from the drain tank and the drain line. Furthermore, the at least one injection component can supply both the gas and the liquid into the drain tank when the predetermined process is restarted.

[0028] In some exemplary embodiments, the substrate processing apparatus may further include: a first adjusting member for adjusting the amount of gas supplied from the at least one injection member to the drain tank when the internal pressure of the drain tank exceeds a preset pressure range during the supply of gas from the at least one injection member to the drain tank. The first adjusting member may interrupt the supply of gas from the at least one injection member to the drain tank when the internal pressure of the drain tank is greater than the maximum value of the preset pressure. The first adjusting member may adjust the amount of gas supplied from the at least one injection member to the drain tank such that the internal pressure of the drain tank is greater than the pressure of the air when the air flows into the drain tank via the drain line.

[0029] In some exemplary embodiments, the substrate processing apparatus may further include: a second adjustment component for adjusting the amount of liquid supplied by the at least one spraying component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range during the supply of liquid from the at least one spraying component to the drain tank.

[0030] Technical effect

[0031] According to an exemplary embodiment of the present invention, the substrate processing apparatus including at least one spraying component can block the inflow of air from the outside by providing the gas, thereby suppressing the formation of precipitates caused by the reaction between the processing solution and oxygen contained in the air. Furthermore, the substrate processing apparatus including at least one spraying component can maintain a constant humidity by supplying the liquid, thereby suppressing the formation of precipitates caused by relatively low humidity. This prevents the pipelines and / or valves of the substrate processing apparatus through which the processing solution flows from becoming blocked or damaged by the precipitates.

[0032] However, the effects of the present invention are not limited to those described above, and various extensions can be made without departing from the spirit and scope of the present invention. Attached Figure Description

[0033] Figure 1 This is a simplified cross-sectional view illustrating an exemplary embodiment of the substrate processing apparatus according to the present invention;

[0034] Figure 2 This is a simplified cross-sectional view illustrating the spraying component of a substrate processing apparatus according to an exemplary embodiment of the present invention. Detailed Implementation

[0035] The following describes exemplary embodiments of the present invention. Various modifications and embodiments can be made to the present invention, which are detailed herein. However, this is not intended to limit the invention to a specific mode of disclosure, and should be understood to include all modifications, equivalents, and substitutions within the scope of the invention's concept and technology. Similar reference numerals are used for similar constituent elements in the description of the drawings. Terms such as "first," "second," etc., can be used to describe multiple constituent elements, but the constituent elements are not limited by the terms. The terms are only used to distinguish one constituent element from other constituent elements. The terminology used in this application is only for describing specific embodiments and is not intended to limit the invention. The singular form also includes the plural form unless otherwise expressly stated herein. Terms such as "comprising," "having," or "possessing" as used in this application should be understood as the presence of the features, numbers, steps, operations, constituent elements, components, or combinations thereof described in the specification, and should not be construed as pre-excluding the presence or additional possibilities of one or more other features, numbers, steps, operations, constituent elements, components, or combinations thereof.

[0036] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries shall be interpreted as having the meaning consistent with the context of the relevant art, and shall not be construed as having an ideal or overly formal meaning unless expressly defined in this application.

[0037] The exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings, and repeated descriptions of the same constituent elements are omitted.

[0038] Figure 1 This is a simplified cross-sectional view used to illustrate an exemplary embodiment of the substrate processing apparatus according to the present invention. Figure 2 This is a simplified cross-sectional view illustrating the spraying component of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0039] See Figure 1 The substrate processing apparatus 100 according to the exemplary embodiment can be applied to processes for manufacturing integrated circuit devices such as semiconductor devices and display devices. For example, the substrate processing apparatus 100 can perform predetermined processes such as cleaning processes or etching processes that process the substrate using a processing solution such as a cleaning solution or an etching solution.

[0040] In an exemplary embodiment, the substrate processing apparatus 100 is capable of performing an etching process using an etchant containing a phosphoric acid solution to etch a nitride layer formed on a substrate, wherein the phosphoric acid solution contains silicon dioxide. Alternatively, the substrate processing apparatus 100 can perform a cleaning process using a cleaning solution containing deionized water to clean the substrate.

[0041] Typically, the substrate processing apparatus 100 may include an engineering chamber for performing predetermined processes such as the etching process or the cleaning process, a supply component including supply lines and supply valves for supplying a processing solution such as the etching solution or the cleaning solution into the engineering chamber, and a vacuum component for controlling the process conditions within the engineering chamber. In this case, during the execution of the predetermined process, the processing solution can be discharged from the engineering chamber and / or the supply component using the substrate processing apparatus 100.

[0042] In order to process the processing solution discharged from the engineering chamber and / or the supply component, the substrate processing apparatus 100 may include a drain tank 11, a drain line 13, at least one spraying component 15, a first adjustment component 17, a second adjustment component 19, etc.

[0043] In an exemplary embodiment, the drain tank 11 may contain the treatment solution discharged during the predetermined process performed in the engineering chamber. To this end, the drain tank 11 may further include a receiving space capable of containing the treatment solution discharged from the engineering chamber and / or the supply component. Furthermore, the drain tank 11 may include a connecting component 21 having connecting lines and valves fluidly connected to the engineering chamber and the supply component. In some exemplary embodiments, the connecting component 21 may include multiple connecting lines and multiple valves respectively disposed on the multiple connecting lines.

[0044] The treatment solution discharged from the engineering chamber and / or the supply component can be discharged to the outside from the drainage tank 11 through the drainage line 13. In an exemplary embodiment, the drainage line 13 may have a flow line structure that allows the discharged treatment solution to flow easily to the outside.

[0045] According to an exemplary embodiment, during the predetermined process (e.g., the etching process or the cleaning process) performed on the substrate using the substrate processing apparatus 100, the processing solution (e.g., the etching solution or the cleaning solution) can be discharged from the engineering chamber and / or the supply component into the drain tank 11. The discharged processing solution can then be discharged from the drain tank 11 to the outside via the drain line 13. To facilitate the smooth flow of the discharged processing solution, the connecting component 21 can be connected to the upper part of the drain tank 11, and the drain line can be connected to the lower part of the drain tank 11.

[0046] When the processing solution comes into contact with air, precipitates may form within the processing solution. In particular, when the drain line 13 is exposed to the outside, the processing solution within the drain line 13 can come into contact with air, thus allowing precipitates to form within the drain line 13. In this case, the precipitates can move into the drain tank 11, potentially causing blockage or damage to the connecting component 21. In an exemplary embodiment, during the etching process using an etching solution containing a phosphoric acid solution containing silica, the silica readily reacts with air, potentially leading to significant precipitate formation within the drain line 13 and the drain tank 11. Furthermore, moisture can evaporate within the drain tank 11, resulting in relatively low internal humidity, which also contributes to precipitate formation within the drain tank 11. In view of the above problems, the substrate processing apparatus 100 can block the contact between the processing solution and the air during the discharge of the processing solution, and can maintain the humidity of the discharge tank 11 within a preset humidity range.

[0047] See Figure 1 and Figure 2 The at least one spraying component 15 can supply gas to the drain tank 11 to block air from flowing into the drain tank 11. Furthermore, the at least one spraying component 15 can supply liquid into the drain tank 11 to maintain the humidity inside the drain tank 11 within a preset humidity range.

[0048] In an exemplary embodiment, the at least one spraying component 15 can individually supply the gas and the liquid to the drain tank 11. Furthermore, the at least one spraying component 15 is capable of supplying the gas and the liquid to the drain tank 11. The atomized liquid can be sprayed from the at least one spraying component 15 into the drain tank 11.

[0049] The at least one injection component 15 may include a three-way valve, which can connect a first path for supplying the gas and a second path for supplying the liquid, or can block either the first path or the second path. That is, when the at least one injection component 15 supplies the gas and the liquid to the drain tank 11, the three-way valve can connect the first path and the second path. Furthermore, when the at least one injection component 15 supplies the gas or the liquid to the drain tank 11, the three-way valve can block either the first path or the second path.

[0050] In an exemplary embodiment, the at least one spraying member 15 may be disposed on the upper part of the drain tank 11. The at least one spraying member 15 is capable of spraying the gas and / or the liquid toward the lower part of the drain tank 11 where the drain line 13 is located. In some exemplary embodiments, the substrate processing apparatus 100 may include a plurality of spraying members 15 arranged substantially at predetermined intervals on the upper part of the drain tank 11. The at least one spraying member 15 is capable of uniformly spraying the gas and / or the liquid into the drain tank 11.

[0051] According to an exemplary embodiment, during the discharge of the processing solution from the engineering chamber and / or the supply component, the at least one spraying component 15 may selectively supply the gas and / or the liquid into the drain tank 11. Furthermore, if the predetermined process is not performed, or if the processing solution has been completely discharged from the drain tank 11 and the drain line 13, the at least one spraying component 15 may supply the gas into the drain tank 11. Further, when the predetermined process is interrupted and then restarted by the substrate processing apparatus 100, the at least one spraying component 15 is capable of supplying the gas and the liquid into the drain tank 11.

[0052] In an exemplary embodiment, the at least one injection component 15 can only inject the gas containing nitrogen, air, or a mixture of nitrogen and air into the interior of the drain tank 11, thus enabling the at least one injection component 15 to regulate the internal pressure of the drain tank 11. This blocks the flow of air from the outside into the drain tank 11 through the drain line 13, thereby suppressing the formation of precipitates caused by silica contained in the phosphoric acid solution. In other words, the at least one injection component 15 can inject the gas into the drain tank 11 towards the drain line 13, thereby preventing air from flowing into the drain tank 11 through the drain line 13. Therefore, by blocking the contact between the treatment solution and the air, the formation of precipitates within the drain tank 11 can be suppressed. Furthermore, when the substrate processing device 100 is restarted after being shut down for a relatively long period of time for maintenance, the at least one spraying component 15 can spray the liquid containing deionized water, phosphoric acid, hydrofluoric acid or a mixture thereof into the drain tank 11, or spray the gas and the liquid, to remove residual precipitates caused by the silicon dioxide in the drain tank 11.

[0053] In an exemplary embodiment, since the at least one spraying component 15 can selectively spray the gas or the liquid into the drain tank 11, the internal humidity of the drain tank 11 can be maintained within the preset humidity range. Therefore, the formation of the precipitate in the drain tank 11 can be more effectively suppressed by the at least one spraying component 15.

[0054] As described above, the substrate processing apparatus 100, including at least one spraying member 15, can block the inflow of air from the outside by supplying the gas, thereby suppressing the formation of precipitates caused by the reaction between the processing solution and the oxygen contained in the gas. Furthermore, the substrate processing apparatus 100, including at least one spraying member 15, can maintain a certain humidity through the supply of the liquid, thereby suppressing the formation of precipitates caused by relatively low humidity. In other words, the substrate processing apparatus 100 can effectively control the conditions that can generate the precipitates. Therefore, the substrate processing apparatus can prevent blockage or damage to the pipelines and / or valves of the substrate processing apparatus that allow the processing solution to flow due to the precipitates.

[0055] In an exemplary embodiment, the liquid comprising the phosphoric acid solution, the hydrofluoric acid solution, or a mixture thereof is capable of dissolving precipitates caused by the silicon dioxide. The substrate processing apparatus 100 can be advantageously used in etching processes where a phosphoric acid solution containing the silicon dioxide is used as an etching solution.

[0056] If the internal pressure of the drain tank 11 is relatively low during the supply of gas to the drain tank 11 by the at least one injection component 15, it may not be able to adequately block the air flowing into the drain tank 11 via the drain line 13. Conversely, if the internal pressure of the drain tank 11 is relatively high, it may damage the drain tank 11 and the drain line 13. Therefore, the substrate processing apparatus 100 may include a first adjustment component 17 for adjusting the internal pressure of the drain tank 11.

[0057] See you again Figure 1 The first adjusting component 17 can measure and adjust the internal pressure of the drain tank 11 supplied by the at least one injection component 15. When the internal pressure of the drain tank 11 exceeds a preset pressure range during the injection of gas into the drain tank 11 by the at least one injection component 15, the first adjusting component 17 can adjust the amount of gas supplied from the at least one injection component 15. In an exemplary embodiment, the first adjusting component 17 may include a sensor component for measuring the pressure formed in the drain tank 11 and a control component for adjusting the amount of gas injected from the at least one injection component 15.

[0058] If the internal pressure of the drain tank 11 exceeds a preset maximum pressure, the drain line 13 may become blocked. Therefore, the first adjusting component 17 interrupts the gas supply from the at least one injection component 15. In this case, after interrupting the gas supply from the at least one injection component 15, the drain line 13 and the drain tank 11 need to be inspected. The first adjusting component 17 can adjust the amount of gas injected through the at least one injection component 15 so that the internal pressure of the drain tank 11 is substantially greater than the pressure of the air flowing into the drain tank 11 from the drain line 13.

[0059] In some exemplary embodiments, the first adjusting member 17 can not only adjust the amount of gas supplied from the at least one injection member 15, but also adjust the amount of gas and liquid, such that when the gas and liquid are simultaneously supplied from the at least one injection member 15 into the drain tank 11, the internal pressure of the drain tank 11 reaches within the preset pressure range.

[0060] In an exemplary embodiment, if the internal humidity of the drain tank 11 is relatively low during the supply of liquid from the at least one spraying member 15 to the drain tank 11, it may be insufficient to suppress the formation of precipitates within the drain tank 11 and the drain line 13. Furthermore, if the internal humidity of the drain tank 11 is relatively high, excessive consumption of the liquid may increase manufacturing costs. Therefore, the substrate processing apparatus 100 may include a second adjustment member 19 for measuring and adjusting the internal humidity of the drain tank 11.

[0061] like Figure 1 As illustrated, the second adjustment component 19 can adjust the amount of liquid sprayed from the at least one spray component 15 when the internal humidity of the drain tank 11 exceeds a preset humidity range during the supply of liquid to the drain tank 11 by the at least one spray component 15.

[0062] In an exemplary embodiment, the second adjustment component 19 may include a sensor component for measuring the internal humidity of the drain tank 11 (i.e., the concentration of the treatment solution) and a control component for adjusting the amount of liquid supplied from the at least one spray component 15.

[0063] In some exemplary embodiments, the second adjustment member 19 can not only adjust the amount of liquid supplied from the at least one injection member 15, but also adjust the amount of gas and liquid, so that when the liquid and gas are supplied to the drain tank 11 from the at least one injection member 15 at the same time, the internal humidity of the drain tank 11 reaches within the preset humidity range.

[0064] According to the substrate processing method of the exemplary embodiment, in the predetermined step of the substrate processing apparatus 100 described above, the processing solution can be discharged from the engineering chamber and / or the supply component. The discharge tank 11 can contain the processing solution discharged in the predetermined step, and then it can be discharged to the outside through the discharge line 13. To block air from flowing into the discharge tank 11 and / or regulate the humidity inside the discharge tank 11, the gas and / or the liquid can be supplied to the discharge tank 11 from at least one spraying component 15. This allows the formation of precipitates in the discharge tank 11 and the discharge line 13 caused by the processing solution to be suppressed.

[0065] In some exemplary embodiments, the gas and / or liquid can be uniformly sprayed from at least one spraying member 15, which is substantially arranged at predetermined intervals on the upper part of the drain tank 11, toward the lower part of the drain tank 11.

[0066] In an exemplary embodiment, when the predetermined process is interrupted, or when the treatment solution is completely drained from the drain tank 11 and the drain line 13, the gas can be supplied to the drain tank 11 from the at least one spraying component 15. Furthermore, when the predetermined process is restarted, the gas and the liquid can be supplied to the drain tank 11 from the at least one spraying component 15.

[0067] In an exemplary embodiment, the internal pressure of the drain tank 11 can be measured, and when the internal pressure of the drain tank 11 exceeds the preset pressure range, the amount of gas supplied from the at least one injection component 15 to the drain tank 11 can be adjusted. In this case, when the internal pressure of the drain tank is substantially greater than the maximum value of the preset pressure, the supply of gas from the at least one injection component 15 to the drain tank 11 can be interrupted. Furthermore, the amount of gas supplied from the at least one injection component 15 to the drain tank 11 is adjusted such that when air flows into the drain tank 11 from the drain line 13, the internal pressure of the drain tank 11 is substantially greater than the pressure of the air. In some exemplary embodiments, in order to adjust the internal pressure of the drain tank 11, the amount of gas and the amount of liquid supplied from the at least one injection component 15 to the drain tank 11 can be adjusted.

[0068] In an exemplary embodiment, the internal humidity of the drain tank 11 can be measured, and when the internal humidity of the drain tank 11 exceeds the preset humidity range, the amount of liquid supplied from the at least one spraying member 15 to the drain tank 11 can be adjusted. In some exemplary embodiments, in order to adjust the internal humidity of the drain tank 11, the amount of liquid and the amount of gas supplied from the at least one spraying member 15 to the drain tank 11 can be adjusted.

[0069] According to the exemplary embodiment, the precipitates formed in the drain tank 11 and the drain line 13 caused by the treatment solution can be effectively suppressed, and the flow of the precipitates through the drain line 13 and the drain tank 11 can be blocked.

[0070] The substrate processing apparatus and substrate processing method according to exemplary embodiments of the present invention can be more advantageously applied to the manufacture of various devices such as memory devices, non-volatile memory devices, system semiconductor devices, image sensors, and organic light-emitting display devices.

[0071] The exemplary embodiments of the present invention have been described above, but those skilled in the art will understand that various modifications and alterations can be made to the present invention without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. A substrate processing apparatus, characterized in that, include: A drain tank is used to contain the treatment solution discharged from a predetermined process. A drain line is used to discharge the treatment solution from the drain tank to the outside. as well as At least one injection component is used to supply gas into the drain tank to block air from flowing into the drain tank, or to supply both gas and liquid into the drain tank to block air from flowing into the drain tank while simultaneously regulating the humidity inside the drain tank. The at least one injection component includes: a three-way valve configured to connect a first path for supplying the gas to a second path for supplying the liquid, or configured to block the second path. The at least one spraying component sprays the gas, or the gas and the liquid, uniformly into the drain tank, directed towards the lower part of the drain tank.

2. The substrate processing apparatus according to claim 1, characterized in that: The at least one spraying component is arranged at a predetermined interval on the upper part of the drain tank.

3. The substrate processing apparatus according to claim 1, characterized in that: The at least one injection component supplies the gas to the drain tank when the predetermined process is interrupted, or when the solution is completely discharged from the drain tank and the drain line. The at least one injection component supplies the gas and the liquid to the drain tank when the predetermined process is restarted.

4. The substrate processing apparatus according to claim 1, characterized in that, Also includes: A first adjusting component is used to adjust the amount of gas supplied from the at least one injection component to the drain tank when the internal pressure of the drain tank exceeds a preset pressure range during the supply of gas from the at least one injection component to the drain tank.

5. The substrate processing apparatus according to claim 4, characterized in that: When the internal pressure of the drain tank is greater than the maximum value of the preset pressure, the first adjusting component interrupts the supply of gas from the at least one injection component to the drain tank.

6. The substrate processing apparatus according to claim 4, characterized in that: The first adjusting component regulates the amount of gas supplied from the at least one injection component to the drain tank, such that the internal pressure of the drain tank is greater than the air pressure, thereby blocking the air from flowing into the drain tank via the drain line.

7. The substrate processing apparatus according to claim 1, characterized in that, Also includes: The second adjustment component is used to adjust the amount of liquid supplied by the at least one injection component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range during the supply of the gas and liquid from the at least one injection component to the drain tank.

8. The substrate processing apparatus according to claim 1, characterized in that: The gas includes nitrogen, and the liquid includes deionized water, phosphoric acid solution, hydrofluoric acid solution, or a mixture thereof.

9. A substrate processing method, characterized in that, include: The step of receiving the treatment solution discharged from the predetermined process in the drain tank; The step of discharging the treatment solution from the drainage tank to the outside through the drainage pipeline; as well as The steps of supplying gas into the drain tank from at least one injection component to block air from flowing into the drain tank, or supplying gas and liquid into the drain tank to block air from flowing into the drain tank while simultaneously regulating the humidity within the drain tank, are described. The at least one injection component includes a three-way valve that connects the first path through which the gas is supplied to the second path through which the liquid is supplied, or blocks the second path. The at least one spraying component sprays the gas, or the gas and the liquid, uniformly into the drain tank, directed towards the lower part of the drain tank.

10. The substrate processing method according to claim 9, characterized in that: The at least one spraying component is arranged at a predetermined interval on the upper part of the drain tank.

11. The substrate processing method according to claim 9, characterized in that: When the predetermined process is interrupted, or when the treatment solution is completely discharged from the drain tank and the drain line, the gas is supplied to the drain tank from the at least one spraying component. When the predetermined process is restarted, the gas and the liquid are supplied from the at least one injection component into the drain tank.

12. The substrate processing method according to claim 9, characterized in that, Also includes: The step of measuring the internal pressure of the drain tank; When the internal pressure of the drain tank exceeds a preset pressure range, the step of adjusting the amount of gas supplied from the at least one injection component to the drain tank is performed. When the internal pressure of the drain tank is greater than the maximum value of the preset pressure, the step of supplying the gas from the at least one injection component into the drain tank is interrupted; as well as The amount of gas supplied from the at least one injection component to the drain tank is adjusted such that the internal pressure of the drain tank is greater than the air pressure, thereby blocking the air flowing from the drain line into the drain tank.

13. The substrate processing method according to claim 9, characterized in that, Also includes: The step of measuring the internal humidity of the drain tank; as well as The step of adjusting the amount of liquid supplied from the at least one spraying component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range.

14. The substrate processing method according to claim 9, characterized in that: The gas includes nitrogen, and the liquid includes deionized water, phosphoric acid solution, hydrofluoric acid solution, or a mixture thereof.

15. A substrate processing apparatus, characterized in that, include: A drain tank for containing the etching solution discharged during an etching process using an etching solution containing phosphoric acid solution, wherein the phosphoric acid solution contains silicon dioxide; A drain line is used to discharge the etching solution from the drain tank to the outside. as well as At least one spraying component is provided for blocking the contact between the silica in the phosphoric acid solution and the air and / or adjusting the humidity in the drain tank. The at least one injection component supplies nitrogen gas into the drain tank, or supplies a liquid comprising a gas and a mixture of deionized water, phosphoric acid solution, hydrofluoric acid solution, or the like into the drain tank, to suppress the formation of precipitates caused by the silica. The at least one injection component includes: a three-way valve configured to connect a first path for supplying the gas to a second path for supplying the liquid, or configured to block the second path. The at least one spraying component sprays the gas, or the gas and the liquid, uniformly into the drain tank, directed towards the lower part of the drain tank.

16. The substrate processing apparatus according to claim 15, characterized in that: The at least one spraying component is arranged at a predetermined interval on the upper part of the drain tank.

17. The substrate processing apparatus according to claim 15, characterized in that: The at least one injection component supplies the gas into the drain tank when the predetermined process is interrupted, or when the solution is completely discharged from the drain tank and the drain line. When the predetermined process is restarted, the at least one injection component supplies the gas and the liquid into the drain tank.

18. The substrate processing apparatus according to claim 15, characterized in that, Also includes: A first adjusting component is configured to adjust the amount of gas supplied from the at least one injection component to the drain tank when the internal pressure of the drain tank exceeds a preset pressure range during the supply of gas from the at least one injection component to the drain tank. When the internal pressure of the drain tank exceeds the maximum value of the preset pressure, the first adjusting component interrupts the supply of gas from the at least one injection component to the drain tank. The first adjusting component regulates the amount of gas supplied from the at least one injection component to the drain tank, such that the internal pressure of the drain tank is greater than the air pressure, thereby blocking the air from flowing into the drain tank via the drain line.

19. The substrate processing apparatus according to claim 15, characterized in that, Also includes: The second adjustment component is used to adjust the amount of liquid supplied by the at least one injection component to the drain tank when the internal humidity of the drain tank exceeds a preset humidity range during the supply of the gas and liquid from the at least one injection component to the drain tank.

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