Laser protection material and manufacturing method, light emitting chip transfer method and display panel

Abstract

The application relates to a laser protection material and a manufacturing method, a transfer method of a light-emitting chip and a display panel. The laser protection material comprises a specific solution, metal powder, an ultraviolet absorber and a curing agent. The mass of the metal powder is 10% to 70% of the mass of the specific solution. The mass of the ultraviolet absorber is 30% to 50% of the mass of the specific solution. The metal powder in the laser protection material can convert the energy of laser into heat when the laser acts, and the generated heat can be well dissipated by using the heat conductivity of the metal powder, thereby playing a role of resisting laser in some processes.

Description

Technical Field

[0001] This invention relates to the field of semiconductor display technology, and in particular to a laser protection material and its manufacturing method, a light-emitting chip transfer method, and a display panel. Background Technology

[0002] Micro LED (Micro Light Emitting Diode Display) technology miniaturizes and integrates traditional LEDs (Light Emitting Diodes) to form micrometer-pitch LED arrays, achieving ultra-high resolution. Micro LEDs possess self-emissive properties. Compared to OLED (Organic Light-Emitting Diode) and LCD (Liquid Crystal Display) displays, Micro LEDs offer easier and more accurate color calibration, longer lifespan, higher brightness and contrast, and are also thinner and more energy-efficient. Due to its high-density, small-size, and high-pixel count, Micro LED is poised to become the most promising next-generation revolutionary display technology.

[0003] Because Micro LEDs are micrometers in size, mass transfer technology is the core technology in the manufacturing process, which aims to transfer the light-emitting chip onto the substrate or circuit. Among them, selective laser lift-off is a fast transfer method in mass transfer, in which the laser passes through the laser device to the photoresist through the transfer substrate. However, the light-emitting chip is easily damaged by the laser in this process.

[0004] Therefore, how to avoid damage to the light-emitting chip during the transfer process and improve the transfer yield is an urgent problem to be solved. Summary of the Invention

[0005] In view of the shortcomings of the above-mentioned related technologies, the purpose of this application is to provide a laser protection material and manufacturing method, a light-emitting chip transfer method and a display panel, which aims to solve the problem that the light-emitting chip is easily damaged during the light-emitting chip transfer process.

[0006] A laser protection material, comprising:

[0007] Specific solutions, metal powders, UV absorbers and curing agents;

[0008] The mass of the metal powder is 10% to 70% of the mass of the specific solution;

[0009] The mass of the ultraviolet absorber is 30% to 50% of the mass of the specific solution.

[0010] If the aforementioned laser protection material is placed between the light-emitting chip and the photopolymer adhesive, firstly, the laser protection material can effectively fix the photopolymer adhesive and the light-emitting chip. Secondly, the metal powder in the laser protection material can convert the energy of the laser into heat when the laser is applied, and use the thermal conductivity of the metal powder to dissipate the generated heat effectively, protecting the light-emitting chip. At the same time, the ultraviolet absorber in the laser protection material can absorb the ultraviolet laser in the process when the laser debonds and removes the photopolymer adhesive, preventing the laser from damaging the light-emitting chip. This avoids damage to the light-emitting chip during the transfer process and the problem of low overall yield of selective transfer.

[0011] Optionally, the specific solution includes at least one of polydimethylsiloxane and polymethyl methacrylate.

[0012] Optionally, the metal powder may be made of at least one of the following materials: magnesium, tin, titanium, iron, cobalt, gold, zinc, chromium, aluminum, nickel, or silver.

[0013] Optionally, the ultraviolet absorber includes at least one of the following: phenyl salicylate powder, ultraviolet absorber UV-O, and ultraviolet absorber UV-531.

[0014] Optionally, the curing agent is one of the following: benzidine, dibenzylamino ether, m-phenylenediamine, latex, rubber, polyethylene, polyurethane, polyamide, or silica polyurethane.

[0015] Based on the same inventive concept, the present invention also provides a method for manufacturing a laser protective material, the method comprising: adding metal powder to a specific solution to obtain a specific solution containing metal powder; the mass of the metal powder being 10% to 70% of the mass of the specific solution; adding an ultraviolet absorber to the specific solution containing metal powder to obtain an adhesive solution; the mass of the ultraviolet absorber being 30% to 50% of the mass of the specific solution; and adding a curing agent to cure the adhesive solution to obtain the laser protective material.

[0016] The above-mentioned method for manufacturing laser protective material involves adding metal powder to a specific solution to obtain a specific solution containing metal powder; adding an ultraviolet absorber to the specific solution containing metal powder to obtain an adhesive solution; and curing the adhesive solution to obtain the laser protective material. The laser protective material prepared by this method is placed between the light-emitting chip and the photopolymer adhesive. Firstly, the laser protective material can effectively fix the photopolymer adhesive and the light-emitting chip. Secondly, the metal powder in the laser protective material can convert the energy of the laser into heat when the laser acts, and utilize the thermal conductivity of the metal powder to effectively dissipate the generated heat, protecting the light-emitting chip. Simultaneously, the ultraviolet absorber in the laser protective material can absorb the ultraviolet laser during the laser debonding process to remove the photopolymer adhesive, preventing damage to the light-emitting chip from the laser and avoiding damage to the light-emitting chip during the transfer process, thus addressing the problem of low overall yield in selective transfer.

[0017] Based on the same inventive concept, this application also provides a method for transferring a light-emitting chip, comprising: providing a substrate on which a plurality of light-emitting chips are disposed; disposing a laser protection material on the side of the light-emitting chip to be transferred away from the substrate, and forming a protective film, wherein the laser protection material is as shown above; disposing a photodegradable adhesive on the side of all the light-emitting chips on the substrate away from the substrate, and bonding the photodegradable adhesive to a transfer substrate; selectively irradiating the transfer substrate with a laser to remove the photodegradable adhesive disposed on the light-emitting chip to be transferred; removing the transfer substrate, wherein the transfer substrate carries away the light-emitting chip on the substrate with the photodegradable adhesive, thereby retaining the light-emitting chip to be transferred on the substrate; removing the protective film disposed on the light-emitting chip to be transferred; and transferring the light-emitting chip to be transferred to a target substrate.

[0018] The above-mentioned method for transferring light-emitting chips involves setting a protective film formed by laser protection material on the side of the light-emitting chip to be transferred away from the substrate. This film effectively fixes the photoresist and the light-emitting chip. Furthermore, the metal powder in the film can convert the energy of the laser into heat when the laser is applied, and the thermal conductivity of the metal powder can effectively dissipate the generated heat, protecting the light-emitting chip. At the same time, the ultraviolet absorber in the laser protection material can absorb the ultraviolet laser during the laser debonding and removal of the photoresist, preventing damage to the light-emitting chip from the laser. This method avoids damage to the light-emitting chip during the transfer process and addresses the issue of low overall yield in selective transfer.

[0019] Optionally, the step of setting a laser protection material on the side of the light-emitting chip to be transferred away from the substrate and forming a protective film includes: setting the laser protection material on the side of the light-emitting chip to be transferred away from the substrate; and baking the laser protection material to cure it and form the protective film.

[0020] Optionally, bonding the photoresist to the transfer substrate includes: matching the bonding pressure to the light-emitting chip to be transferred according to the area size of the light-emitting chip to be transferred; applying the bonding pressure to the transfer substrate; and baking the photoresist to bond the photoresist to the transfer substrate.

[0021] Based on the same inventive concept, this application also provides a display panel, the display panel including a light-emitting chip and a circuit board, wherein the light-emitting chip is transferred to the die-bonding area of ​​the circuit board by the light-emitting chip transfer method as described above. Attached Figure Description

[0022] Figure 1 This is a basic schematic diagram of laser debonding of photopolymerized adhesives provided in an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of the basic process of manufacturing laser protective materials according to an embodiment of the present invention;

[0024] Figure 3 A schematic diagram of the basic process of a light-emitting chip transfer method provided in another optional embodiment of the present invention;

[0025] Figure 4-1 A schematic diagram of the basic structure of a protective film on a light-emitting chip is provided for another optional embodiment of the present invention;

[0026] Figure 4-2 Another schematic diagram of the basic structure of a protective film on a light-emitting chip, provided as another optional embodiment of the present invention;

[0027] Figure 5 This is a schematic diagram of the basic structure of the protective film and photopolymer adhesive connection provided in another optional embodiment of the present invention;

[0028] Figure 6 This is a schematic diagram of the basic structure for connecting the photoresist and the transfer substrate in another optional embodiment of the present invention;

[0029] Figure 7 A basic schematic diagram of laser debonding of photopolymerized adhesives provided in another optional embodiment of the present invention;

[0030] Figure 8 A basic schematic diagram of removing the transfer substrate provided in another optional embodiment of the present invention;

[0031] Figure 9 This is a basic schematic diagram of the protective film after removal, provided in another optional embodiment of the present invention;

[0032] Figure 10This is a basic schematic diagram of the bonding between a light-emitting chip and a target substrate, provided in another optional embodiment of the present invention;

[0033] Figure 11 This is a basic schematic diagram of the substrate after removal, provided for another optional embodiment of the present invention;

[0034] Explanation of reference numerals in the attached figures:

[0035] 1-Light-emitting chip, 11-First light-emitting chip, 12-Second light-emitting chip, 13-Third light-emitting chip, 14-Fourth light-emitting chip, 2-Transfer substrate, 3-Photopolymer adhesive, 4-Substrate, 5-Protective film, 6-Substrate to be bonded. Detailed Implementation

[0036] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0038] Because Micro LEDs are micrometers in size, mass transfer technology is a core technology in the manufacturing process, aiming to transfer the light-emitting chip onto a corresponding substrate or circuit. Selective laser lift-off is a rapid transfer method in mass transfer, where the laser passes through the transfer substrate and acts on the photoresist. However, the light-emitting chip is easily damaged during this process, such as... Figure 1 As shown, a plurality of light-emitting chips 1 are provided on the substrate 4. When the first light-emitting chip 11 and the third light-emitting chip 13 need to be transferred, and the second light-emitting chip 12 and the fourth light-emitting chip 14 do not need to be transferred, when the transfer substrate 2 is irradiated by laser to perform laser debonding on the photodegradable adhesive 3 of the first light-emitting chip 11 and the third light-emitting chip 13, the heat and ultraviolet rays of the laser can easily damage the first light-emitting chip 11 and the third light-emitting chip 13, resulting in a decrease in the transfer yield.

[0039] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0040] Embodiments of the present invention

[0041] To address the problem in related technologies where light-emitting chips are easily damaged by laser irradiation during the transfer process, embodiments of the present invention provide a laser protection material. The laser protection material comprises: a specific solution, metal powder, an ultraviolet absorber, and a curing agent; wherein the mass of the metal powder is 10% to 70% of the mass of the specific solution; and the mass of the ultraviolet absorber is 30% to 50% of the mass of the specific solution. In some embodiments, the specific solution includes at least one of polydimethylsiloxane and polymethyl methacrylate. In one example, the specific solution may be prepared by mixing polydimethylsiloxane and polymethyl methacrylate in a mass ratio of 3:1, and then adding a diluent.

[0042] In some examples of this embodiment, the specific solution may include a solution with a viscosity of 50 mPa·s-250 mPa·s and a hardness of 20 HA-70 HA after thermosetting. This specific solution is viscous and can effectively fix the position of the photopolymer and the light-emitting chip. In some examples, the specific solution includes at least one of solutions such as polydimethylsiloxane (PDMS) and polymethyl methacrylate (PMMA). For example, the specific solution is obtained by mixing PDMS and PMMA. Specifically, PDMS and PMMA are mixed in a mass ratio of 3:1 to obtain a mixed solution. A diluent accounting for 30% of the mass of the mixed solution is added to the mixed solution, and the mixture is stirred thoroughly to obtain the specific solution. The diluent includes all non-polar solvents, such as toluene, xylene, dipentene, n-hexane, etc. The specific solution obtained by mixing PDMS and PMMA is viscous and can effectively fix the position of the photopolymer and the light-emitting chip.

[0043] In some examples of this embodiment, the metal powder material includes at least one of the following: magnesium, tin, titanium, iron, cobalt, gold, zinc, chromium, aluminum, nickel, and silver; the metal powder can be obtained by grinding metal particles, wherein the metal particles are made of at least one of the following metals that can absorb heat and have good thermal conductivity: magnesium, tin, titanium, iron, cobalt, gold, zinc, chromium, aluminum, nickel, and silver; the mass of the metal powder is 10% to 70% of the mass of the specific solution; in some examples, the mass of the metal powder is 10%, 25%, 45%, or 70% of the mass of the specific solution; the laser protection material contains metal powder with good thermal conductivity, which can effectively dissipate the generated heat through the thermal conductivity of the metal powder, thereby preventing heat damage to the light-emitting chip.

[0044] In some examples of this embodiment, the ultraviolet absorber includes, but is not limited to, at least one of the following: phenyl salicylate powder, ultraviolet absorber UV-O, and ultraviolet absorber UV-531; the mass of the ultraviolet absorber is 30% to 50% of the mass of a specific solution, and in some examples, the mass of the ultraviolet absorber is 35% or 45% of the mass of a specific solution; wherein, the laser protection material contains an ultraviolet absorber, which can absorb the ultraviolet laser in the process when the photopolymer is removed by laser debonding, defend against laser damage to the light-emitting chip, avoid damage to the light-emitting chip during the transfer process, and avoid the problem of low overall yield of selective transfer.

[0045] In some examples of this embodiment, the curing agent is one of the following: benzidine, dibenzylamino ether, m-phenylenediamine, latex, rubber, polyethylene, polyurethane, polyamide, or silica polyol, and the proportion of the curing agent in the adhesive solution is between 5% and 20%.

[0046] Please see Figure 2 This invention also proposes a method for manufacturing a laser protective material. This method can produce the laser protective material exemplified above in this embodiment. The method for manufacturing the laser protective material includes, but is not limited to, the following steps:

[0047] S101. Add metal powder to a specific solution to obtain a specific solution containing metal powder;

[0048] It is understandable that the mass of the metal powder is 10% to 70% of the mass of a particular solution.

[0049] S102. An ultraviolet absorber is added to a specific solution containing metal powder to obtain a colloid solution;

[0050] It is understandable that the mass of the ultraviolet absorber is 30% to 50% of the mass of a specific solution.

[0051] S103. Add a curing agent and cure the adhesive solution to obtain the laser protection material.

[0052] The method for manufacturing laser protective material provided in this embodiment involves adding metal powder to a specific solution to obtain a specific solution containing metal powder; adding an ultraviolet absorber to the specific solution containing metal powder to obtain an adhesive solution; adding a curing agent and curing the adhesive solution to obtain the laser protective material. The laser protective material prepared by the above method can resist laser light to a certain extent. During chip transfer, it is placed between the light-emitting chip and the photopolymer adhesive. The metal powder in the laser protective material can convert the laser energy into heat when the laser acts, and the thermal conductivity of the metal powder effectively dissipates the generated heat, thereby protecting the light-emitting chip. Simultaneously, the ultraviolet absorber in the laser protective material can absorb the ultraviolet laser during the laser debonding and removal of the photopolymer adhesive, preventing damage to the light-emitting chip and avoiding damage to the light-emitting chip during the transfer process, thus avoiding the problem of low overall yield in selective transfer. In some examples, when the laser protective material has good adhesion, it can also effectively fix the photopolymer adhesive and the light-emitting chip.

[0053] As indicated in the examples above in this embodiment, the metal powder material includes at least one of the following: magnesium, tin, titanium, iron, cobalt, gold, zinc, chromium, aluminum, nickel, and silver. When manufacturing the laser protective material, a specific solution containing the added metal powder can be ultrasonically vibrated to obtain a uniform solution with the metal powder. In some examples, before step S103, the process may further include ultrasonically vibrating the specific solution with the metal powder. It is understood that the addition of thermally conductive metal powder to the specific solution allows for effective heat dissipation, thus preventing heat damage to the light-emitting chip. Ultrasonic vibration ensures a uniform distribution of the metal powder, guaranteeing uniform thermal conductivity of the final laser protective material, thereby ensuring the protective performance of the laser protective material for the chip to a certain extent.

[0054] Another optional embodiment of the present invention:

[0055] To address the problem of light-emitting chips being easily damaged during selective transfer in related technologies, this invention proposes a method for transferring light-emitting chips, such as... Figure 3 As shown, the method includes, but is not limited to:

[0056] S201. A substrate is provided, on which multiple light-emitting chips are disposed;

[0057] S202. A laser protection material is applied to the side of the light-emitting chip to be transferred that is away from the substrate, and a protective film is formed.

[0058] The laser protection material in this embodiment is the same as the laser protection material exemplified in the above embodiments.

[0059] S203. Photopolymer is applied to the side of the substrate away from all the light-emitting chips, and the photopolymer is bonded to the transfer substrate.

[0060] S204. Selectively irradiate the transfer substrate with laser to remove the photoresist on the light-emitting chip to be transferred;

[0061] S205. Remove the transfer substrate. The transfer substrate takes away the light-emitting chip with photoresist on the substrate, so as to leave the light-emitting chip to be transferred on the substrate.

[0062] S206. Remove the protective film on the light-emitting chip to be transferred;

[0063] S207. Transfer the light-emitting chip to be transferred to the target substrate.

[0064] The method for transferring a light-emitting chip provided in this embodiment involves setting a laser protective material on the side of the light-emitting chip away from the substrate to form a protective film. The laser protective material is manufactured using the same method as described in the previous embodiment. A photodegradable adhesive is set on the side of the protective film away from the light-emitting chip, and the photodegradable adhesive is bonded to the transfer substrate. The transfer substrate is selectively irradiated with a laser to remove the photodegradable adhesive from the protective film of the light-emitting chip to be transferred. The transfer substrate is then transferred to remove the light-emitting chip covered by the photodegradable adhesive, thereby leaving the light-emitting chip to be transferred on the substrate. The light-emitting chip remaining on the substrate is then transferred to the target substrate, thus achieving selective transfer. Furthermore, during this process, a laser protective material is placed between the light-emitting chip and the photopolymer adhesive. The metal powder in the laser protective material converts the laser energy into heat during laser action and dissipates the heat effectively using the thermal conductivity of the metal powder, protecting the light-emitting chip to be transferred. Simultaneously, the ultraviolet absorber in the laser protective material absorbs the ultraviolet laser during the laser debonding and removal of the photopolymer adhesive, preventing direct laser damage to the light-emitting chip. This avoids laser damage to the light-emitting chip during the transfer process and addresses the issue of low overall yield in selective transfer. In some examples, when the laser protective material has good adhesion, it can also effectively fix the photopolymer adhesive and the light-emitting chip.

[0065] In some examples, such as Figure 4-1 As shown, a laser protection material is disposed on the side of each light-emitting chip 1 away from the substrate 4 to form a protective film. It should be understood that in some examples, only a portion of the light-emitting chips on the substrate are to be transferred, while the light-emitting chips that do not need to be transferred are not provided with laser protection material; for example... Figure 4-2As shown, the protective film 5 is formed by applying laser protection material to the side of the light-emitting chip away from the substrate 4. This can be achieved by applying the laser protection material only to the side of the first and third light-emitting chips 11 and 13 that are to be transferred away from the substrate 4, while the second and fourth light-emitting chips 12 and 14 that are not to be transferred do not require the application of laser protection material. For example, the laser protection material can be applied to the side of the light-emitting chips to be transferred away from the substrate 4 using a dispensing machine. Other methods can also be used to apply the laser protection material, and this embodiment is not limited to any particular method. In the above example, the side of the light-emitting chip on the substrate with electrodes is away from the substrate, while the side without electrodes is fixed to the substrate.

[0066] In some examples of this embodiment, forming a protective film by disposing a laser protective material on the side of the light-emitting chip away from the substrate includes: disposing the laser protective material on the side of the light-emitting chip to be transferred away from the substrate, and baking the laser protective material to solidify it into a protective film.

[0067] In some examples, when a protective film is provided on all light-emitting chips, a photodegradable adhesive is provided on the side of the light-emitting chip away from the substrate to form a photodegradable adhesive layer. In this case, the photodegradable adhesive layer is connected to each light-emitting chip through the protective film. In other examples, when a laser protection material is provided only on the side of the light-emitting chip to be transferred away from the substrate to form a protective film, and a photodegradable adhesive is provided on the side of the light-emitting chip away from the substrate to form a photodegradable adhesive layer, see [reference needed]. Figure 5 The second and fourth light-emitting chips 12 and 14, which do not need to be transferred, are directly connected to the photodegradable adhesive 3. The first and third light-emitting chips 11 and 13, which are to be transferred, are connected to the photodegradable adhesive 3 through the protective film 5. It should be understood that if a laser protection material is not provided to form a protective film, and the photodegradable adhesive is allowed to directly contact the light-emitting chips to be transferred, the light-emitting chips to be transferred are easily damaged when the photodegradable adhesive on the light-emitting chips to be transferred is laser debonded before the transfer.

[0068] In some examples of this embodiment, bonding the photoresist to the transfer substrate includes: matching the bonding pressure to the transfer light-emitting chip according to the area size of the transferred light-emitting chip; applying the bonding pressure to the transfer substrate; and baking the photoresist to bond the photoresist to the transfer substrate. In one specific example, the bonding pressure is between 100 kg / cm². 2 -1200kg / cm 2 The baking temperature is between 100℃ and 300℃. For example, see [link to example]. Figure 6 After the photoresist 3 is bonded to the transfer substrate 2, the transfer substrate 2 is also connected to the light-emitting chip on the substrate 4 through the photoresist 3.

[0069] like Figure 7As shown, in some examples of this embodiment, the transfer substrate 2 is selectively irradiated with a laser, and the photoresist covering the protective film 5 is removed by the laser, while the photoresist 3 on the remaining light-emitting chips that do not need to be transferred is retained. In one specific example, at a laser power of 0.2-0.3mW, the area of ​​the light-emitting chip to be transferred is laser-debonded, removing the photoresist connecting the transfer substrate and the light-emitting chip to be transferred. In other examples, the laser power is selected according to the actual situation.

[0070] like Figure 8 As shown, after the photoresist 3 on the transfer substrate 2 and the light-emitting chip to be transferred is debonded, the transfer substrate 2 is removed; for example, by using a vacuum suction head or other means, the transfer substrate 2 is lifted up. Since the photoresist 3 on the light-emitting chip to be transferred is removed by laser, there is no connection between the light-emitting chip to be transferred and the transfer substrate 2, and it remains on the substrate 4; while the light-emitting chip that does not need to be transferred this time is connected to the transfer substrate 2 through the photoresist 3, and is removed from the substrate 4 along with the transfer substrate 2.

[0071] like Figure 9 As shown, the remaining first light-emitting chip 11 and third light-emitting chip 13 are light-emitting chips to be bonded. After the above step S206, the protective film is removed. The method of removing the protective film includes, but is not limited to, the removal process by reactive ion etching (RIE) to remove the protective film on the light-emitting chip to be bonded on the substrate 4 by etching.

[0072] like Figure 10 As shown, the first light-emitting chip 11 and the third light-emitting chip 13, after the protective film is removed from the substrate 4, can be directly transferred, that is, directly bonded to the target substrate 6. In this example, the target substrate can be, but is not limited to, the backplate in the display panel.

[0073] like Figure 11 As shown, after the light-emitting chip is transferred to the target substrate 6, the substrate can be removed to obtain the target substrate 6 with the light-emitting chip bonded thereon.

[0074] This embodiment also provides a display panel, which includes a light-emitting chip and a circuit board. The light-emitting chip is transferred to the die-bonding area of ​​the circuit board using the light-emitting chip transfer method described above. It is understood that in this embodiment, the circuit board is a target substrate of the light-emitting chip transfer method described above, and the circuit board may be, but is not limited to, a backplate in the display panel.

[0075] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for transferring light-emitting chips, characterized in that, include: A substrate is provided, on which a plurality of light-emitting chips are disposed; A laser protection material is disposed on the side of the light-emitting chip to be transferred away from the substrate, and a protective film is formed thereon; A photoresist is disposed on the side of all light-emitting chips on the substrate away from the substrate, and the photoresist is bonded to a transfer substrate; The transfer substrate is selectively irradiated with a laser to remove the photodegradable adhesive on the light-emitting chip to be transferred; Remove the transfer substrate, which carries away the light-emitting chip with the photoresist on it, leaving the light-emitting chip to be transferred on the substrate; Remove the protective film from the light-emitting chip to be transferred; Transfer the light-emitting chip to be transferred to the target substrate; The laser protection material includes: Specific solutions, metal powders, UV absorbers and curing agents; The mass of the metal powder is 10% to 70% of the mass of the specific solution; The mass of the ultraviolet absorber is 30% to 50% of the mass of the specific solution.

2. The light-emitting chip transfer method as described in claim 1, characterized in that, The step of setting a laser protection material on the side of the light-emitting chip to be transferred away from the substrate and forming a protective film includes: The laser protection material is disposed on the side of the light-emitting chip to be transferred that is away from the substrate; The laser protection material is baked to solidify it and form the protective film.

3. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, Bonding the photoresist to the transfer substrate includes: Based on the area size of the light-emitting chip to be transferred, the bonding pressure is matched to the light-emitting chip to be transferred; The bonding pressure is applied to the transfer substrate, and the photoresist is baked, so that the photoresist bonds to the transfer substrate.

4. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, The specific solution includes at least one of polydimethylsiloxane and polymethyl methacrylate.

5. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, The metal powder is made of at least one of the following materials: magnesium, tin, titanium, iron, cobalt, gold, zinc, chromium, aluminum, nickel, and silver.

6. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, The ultraviolet absorber includes at least one of the following: phenyl salicylate powder, ultraviolet absorber UV-O, and ultraviolet absorber UV-531.

7. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, The curing agent is one of the following: benzidine, dibenzylamino ether, m-phenylenediamine, polyurethane, or polyamide.

8. The light-emitting chip transfer method as described in claim 1 or 2, characterized in that, The method for manufacturing the laser protective material includes: A specific solution is prepared by adding metal powder to a specific solution to obtain a specific solution containing metal powder; the mass of the metal powder is 10% to 70% of the mass of the specific solution. An ultraviolet absorber is added to the specific solution containing metal powder to obtain an adhesive solution; the mass of the ultraviolet absorber is 30% to 50% of the mass of the specific solution. The laser protection material is obtained by adding a curing agent and curing the adhesive solution.

9. A display panel, characterized in that, The display panel includes a light-emitting chip and a circuit board, wherein the light-emitting chip is transferred to the die-bonding area of ​​the circuit board by the light-emitting chip transfer method according to any one of claims 1-8.

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