Substrate processing apparatus, method of manufacturing semiconductor device, substrate processing method, and gas injector

Abstract

A substrate processing apparatus capable of equalizing the amount of gas supplied in the length direction of a tube of a gas injector in a processing container. The substrate processing apparatus includes a processing container, a substrate holder arranged in the processing container and holding a plurality of substrates in alignment, and a gas injector having a tube extending in a direction in which the plurality of substrates are aligned and supplying gas into the processing container, the gas injector having a first injection hole arranged in a section in which the plurality of substrates are aligned in the length direction of the tube and supplying gas, and a plurality of second injection holes arranged so as to be inclined with respect to the length direction at a front end of the tube and opened at an area smaller than a flow path cross-sectional area of the tube.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, a substrate processing method, and a gas ejector. Background Technology

[0002] As a substrate processing apparatus for processing substrates, a vertical processing apparatus is known. This vertical processing apparatus has a reaction tube that forms a processing chamber inside, in which a predetermined number of substrates are arranged and placed in a vertical direction, the substrates are heated to a predetermined temperature, and processing gas is supplied to the processing chamber to perform substrate processing (for example, Patent Documents 1 and 2).

[0003] Existing technical documents

[0004] Patent Document 1: JP 2020-205438

[0005] Patent Document 2: JP 2009-245984 Summary of the Invention

[0006] The processing chamber of the substrate processing apparatus includes a substrate holder for arranging and holding multiple substrates, and a gas injector for supplying gas into the processing chamber through a tube extending along the direction of substrate arrangement. Furthermore, the tube of the gas injector has multiple injection holes that supply gas along its length, thereby supplying gas to the multiple substrates within the processing chamber.

[0007] However, when there is a bias in the amount of gas supplied along the length of the gas injector tube, there is concern that this could be a factor that would worsen the uniformity of film thickness on each substrate. Therefore, efforts are being made to reduce the bias in the amount of gas supplied.

[0008] This disclosure provides a technique for equalizing the gas supply along the length of the pipe of a gas injector in a processing chamber.

[0009] According to one aspect of this disclosure, a technology is provided comprising: a processing chamber; a substrate holder arranging and holding a plurality of substrates disposed within the processing chamber; and a gas injector having a tube extending along the direction of the arrangement of the plurality of substrates for supplying gas into the processing chamber. The gas injector has a first injection hole disposed along the length direction of the tube in a section for supplying gas to the plurality of substrates, and a plurality of second injection holes at the front end of the tube, which are inclined relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube.

[0010] Invention Effects

[0011] According to this disclosure, it is possible to equalize the gas supply along the length of the pipe of the gas injector in the treatment chamber. Attached Figure Description

[0012] Figure 1 This is a longitudinal sectional view showing a processing furnace of a substrate processing apparatus preferably used in an embodiment of the present invention.

[0013] Figure 2 This is a horizontal cross-sectional view of the processing furnace of the aforementioned substrate processing apparatus.

[0014] Figure 3 This is a longitudinal cross-sectional view of the gas nozzle of the aforementioned substrate processing apparatus.

[0015] Figure 4 This is a top view of the gas nozzle of the aforementioned substrate processing apparatus.

[0016] Figure 5 This is a graph showing the relationship between the substrate position and the ozone (O3) concentration (mole fraction) in the first injection hole of the gas nozzle when a mixture of ozone (O3) and oxygen (O2) is supplied to the gas nozzle under certain conditions in the above-mentioned substrate processing apparatus.

[0017] Figure 6 This is a graph showing the relationship between the substrate position and the pressure in the first injection hole of the gas nozzle when a mixture of ozone (O3) and oxygen (O2) is supplied to the gas nozzle under certain conditions in the above-mentioned substrate processing apparatus.

[0018] Figure 7 This is a schematic diagram illustrating the control system of the aforementioned substrate processing apparatus.

[0019] Figure 8 This is a diagram showing the film formation timing of the aforementioned substrate processing apparatus.

[0020] Figure 9 This is a side view showing a modified example of the gas nozzle of the above-described substrate processing apparatus.

[0021] The reference numerals in the attached figures are explained as follows:

[0022] 10. Substrate processing apparatus

[0023] 50a~50e Gas Injector

[0024] 60a~60f First injection hole

[0025] 61a~61f Second injection hole

[0026] 200 wafers (an example of a substrate)

[0027] 201 Processing Room

[0028] 217 Boat (An example of a substrate holder)

[0029] 222 Nozzle chamber (an example of an injector chamber)

[0030] 340a~340f Gas nozzle (an example of a tube)

[0031] 350a~350e Nozzle support Detailed Implementation

[0032] <One embodiment of the present disclosure>

[0033] Hereinafter, an embodiment of the present disclosure will be described with reference to the accompanying drawings. Furthermore, the drawings used in the following description are illustrative, and the dimensional relationships and ratios of the elements shown in the drawings are not necessarily consistent with reality. Additionally, the dimensional relationships and ratios of the elements in multiple drawings are not necessarily consistent with each other.

[0034] use Figures 1 to 8 An example of a substrate processing apparatus according to an embodiment of the present disclosure is described. Furthermore, in the figures, arrow H indicates the vertical direction of the apparatus, arrow W indicates the width direction of the apparatus (horizontal direction), and arrow D indicates the depth direction of the apparatus (horizontal direction).

[0035] [Overall structure of the substrate processing apparatus 10]

[0036] Substrate processing apparatus 10 Figure 1 The apparatus shown includes a control unit 280 for controlling various components and a processing furnace 202, the processing furnace 202 having a heater 207 as a heating means. The heater 207 is cylindrical and is mounted vertically on the apparatus by means of a heater base (not shown). The heater 207 also functions as an activation mechanism for activating the processing gas with heat. The control unit 280 will be described in detail later.

[0037] Inside the heater 207, a reaction tube 203 constituting a processing container is erected concentrically with the heater 207. The reaction tube 203 is formed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The substrate processing apparatus 10 is a so-called hot-wall type.

[0038] Reaction tube 203 is also like Figure 1 As shown, it has a cylindrical inner tube 12 and a cylindrical outer tube 14 arranged to surround the inner tube 12. The inner tube 12 and the outer tube 14 are arranged concentrically, and a gap S is formed between the inner tube 12 and the outer tube 14. The inner tube 12 is an example of a tube component.

[0039] Inner tube 12 Figure 1As shown, it is formed with a topped shape, open at the lower end and closed at the upper end by a flat wall. Similarly, the outer tube 14 is also formed with a topped shape, open at the lower end and closed at the upper end by a flat wall. Furthermore, as... Figure 2 As shown, a plurality of nozzle chambers 222 (three in this embodiment) are formed in the gap S between the inner tube 12 and the outer tube 14 as injector chambers. The nozzle chambers 222 will be described in detail later.

[0040] like Figure 1 as well as Figure 2 As shown, a processing chamber 201 for processing the wafer 200, which serves as a substrate, is formed inside the inner tube 12. Furthermore, the processing chamber 201 can accommodate a boat 217, which is an example of a substrate holder capable of holding the wafer 200 when multiple layers of wafers 200 are arranged horizontally in a vertical direction. The inner tube 12 surrounds the accommodated wafer 200. The inner tube 12 will be described in detail later.

[0041] The lower end of the reaction tube 203 is supported by a cylindrical manifold 226. The manifold 226 is made of a metal such as a nickel alloy or stainless steel, or a heat-resistant material such as quartz or SiC. A flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is provided on the flange. An airtight member 220 such as an O-ring is arranged between the flange and the lower end of the outer tube 14 to make the interior of the reaction tube 203 airtight.

[0042] The sealing cap 219 is hermetically installed at the lower opening of the manifold 226 using an airtight component 220 such as an O-ring, thus sealing the lower opening of the reaction tube 203, i.e., the opening of the manifold 226. The sealing cap 219 is made of a metal such as a nickel alloy or stainless steel and is formed in a disc shape. The sealing cap 219 may also be constructed by covering its outer side with a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC).

[0043] A boat support platform 218 is provided on the sealing cover 219 to support the boat 217. The boat support platform 218 functions as a heat insulation part made of a heat-resistant material such as quartz or SiC.

[0044] The boat 217 is erected on a boat support 218. The boat 217 is made of a heat-resistant material such as quartz or SiC. The boat 217 has a base plate (not shown) fixed to the boat support 218 and a top plate disposed above it, and multiple support columns 217a (see reference) are erected between the base plate and the top plate. Figure 2 ).

[0045] Multiple wafers 200, which are processed in the processing chamber 201 within the inner tube 12, are held in a boat 217. The wafers 200 are spaced apart from each other, maintained in a horizontal position, and supported by supports 217a of the boat 217 with their centers aligned. The loading direction is the axial direction of the reaction tube 203. That is, the center of the substrate is aligned with the central axis of the boat 217, and the central axis of the boat 217 coincides with the central axis of the reaction tube 203.

[0046] A rotation mechanism 267 for rotating the boat is provided on the lower side of the sealing cover 219. The rotation shaft 265 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the boat support 218. The boat 217 is rotated by the rotation mechanism 267 with the help of the boat support 218, thereby rotating the wafer 200.

[0047] The sealing cap 219 is raised and lowered vertically by a lifting mechanism 115 located outside the reaction tube 203, which can be moved into and out of the vessel 217 relative to the processing chamber 201.

[0048] Nozzle support portions 350a-350e, which support the gas nozzles 340a-340e that supply gas to the interior of the processing chamber 201, are provided in the manifold 226 in a manner that penetrates the manifold 226 (in Figure 1 (Only nozzle support portion 350a is shown in the figure). In this embodiment, five nozzle supports 350a to 350e are provided. The nozzle supports 350a to 350e are made of materials such as nickel alloy or stainless steel.

[0049] Gas supply pipes 310a-310e, which supply gas to the interior of the processing chamber 201, are respectively connected to one end of the nozzle support portions 350a-350e. Additionally, gas nozzles 340a-340e, which function as pipes, are respectively connected to the other end of the nozzle support portions 350a-350e. Figure 1 (Only the nozzle support 350a and gas nozzle 340a are shown in the diagram.) The gas injectors 50a to 50e are composed of gas nozzles 340a to 340e and nozzle support 350a to 350e. The gas nozzles 340a to 340e are made of heat-resistant materials such as quartz (SiO2) or silicon carbide (SiC). Furthermore, the gas nozzles 340a to 340e and the gas supply pipes 310a to 310e will be described in detail later.

[0050] On the other hand, an exhaust port 230 is formed in the outer tube 14 of the reaction tube 203. An exhaust pipe 231 is connected to the exhaust port 230.

[0051] In the exhaust pipe 231, a pressure sensor 245 that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 that acts as a pressure regulator are connected to a vacuum pump 246, which is a vacuum exhaust device. The exhaust pipe 231 downstream of the vacuum pump 246 is connected to an exhaust gas treatment device (not shown). Thus, the system is configured to perform vacuum exhaust by controlling the output of the vacuum pump 246 and the opening of the valve 244 to maintain a predetermined pressure (vacuum level) inside the processing chamber 201.

[0052] In addition, a temperature sensor (not shown) is provided inside the reaction tube 203 as a temperature detector. Based on the temperature information detected by the temperature sensor, the power supply to the heater 207 is adjusted, thereby making the temperature inside the processing chamber 201 the desired temperature distribution.

[0053] In this configuration, in the processing furnace 202, multiple wafers 200 to be processed in batches are loaded in a multi-layered boat 217 and moved into the processing chamber 201 by a boat support 218. Then, the wafers 200 moved into the processing chamber 201 are heated to a predetermined temperature by a heater 207. This apparatus with a processing furnace is called a vertical batch processing apparatus.

[0054] [Essential Components]

[0055] Next, the inner tube 12, the nozzle chamber 222, the gas supply pipes 310a to 310e, the gas nozzles 340a to 340e, and the control unit 280 will be described in detail.

[0056] <Internal Management 12>

[0057] The inner tube 12 has a supply slit 235a-235c, which serves as a supply hole, and a first exhaust port 236, which serves as a discharge portion, opposite to the supply slits 235a-235c. Furthermore, a second exhaust port 237, with a smaller opening area than the first exhaust port 236, is formed below the first exhaust port 236 in the inner tube 12's peripheral wall.

[0058] The first exhaust port 236 formed in the inner tube 12 Figure 1 The region shown is formed from the lower end to the upper end of the processing chamber 201 where the wafer 200 is housed (hereinafter, sometimes referred to as the "wafer region"). A second exhaust port 237 is formed below the first exhaust port 236 of the inner tube 12. The first exhaust port 236 is configured to communicate the processing chamber 201 with the gap S, and the second exhaust port 237 is configured to exhaust ambient gas below the processing chamber 201.

[0059] On the other hand, the supply slits 235a to 235c are formed in a manner in which adjacent wafers 200 are arranged in multiple layers in a vessel 217 housed in the processing chamber 201, respectively, in the vertical direction.

[0060] Furthermore, multiple supply slits 235a formed on the peripheral wall of the inner tube 12 are formed in a transversely elongated slit shape in the vertical direction, which in turn connect the first nozzle chamber 222a (see reference). Figure 2 It is connected to the processing room 201.

[0061] Furthermore, multiple supply slits 235b are formed in a transversely elongated slit shape in the vertical direction and are arranged to the side of the supply slits 235a. Moreover, the supply slits 235b direct the second nozzle chamber 222b (see reference) Figure 2 It is connected to the processing room 201.

[0062] Furthermore, multiple supply slits 235c are formed in a transversely elongated slit shape in the vertical direction, and are arranged on the opposite side of supply slit 235a, separated by supply slit 235b. Moreover, supply slit 235c directs the third nozzle chamber 222c (see reference...) Figure 2 It is connected to the processing room 201.

[0063] <Nozzle Chamber 222>

[0064] Nozzle chamber 222 Figure 2 As shown, a gap S is formed between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14. The nozzle chamber 222 includes a first nozzle chamber 222a extending in the vertical direction, a second nozzle chamber 222b extending in the vertical direction, and a third nozzle chamber 222c extending in the vertical direction. Furthermore, the first nozzle chamber 222a, the second nozzle chamber 222b, and the third nozzle chamber 222c are formed side by side in the circumferential direction of the processing chamber 201 in this order.

[0065] Furthermore, in terms of the circumferential length of the processing chamber 201, the circumferential length of the second nozzle chamber 222b is set to be shorter than the circumferential lengths of the first nozzle chamber 222a and the third nozzle chamber 222c. The first nozzle chamber 222a, the second nozzle chamber 222b, and the third nozzle chamber 222c are examples of ejector chambers.

[0066] Specifically, a nozzle chamber 222 is formed between the first partition 18a extending from the outer peripheral surface 12c of the inner tube 12 toward the outer tube 14 and the second partition 18b extending from the outer peripheral surface 12c of the inner tube 12 toward the outer tube 14, and between the arc-shaped top plate 20 connecting the front end of the first partition 18a and the front end of the second partition 18b and the inner tube 12.

[0067] Furthermore, a third partition 18c and a fourth partition 18d are formed inside the nozzle chamber 222, extending from the outer peripheral surface 12c of the inner tube 12 toward the top plate 20. The third partition 18c and the fourth partition 18d are arranged in this order from the first partition 18a toward the second partition 18b. Additionally, the top plate 20 is separated from the outer tube 14. Furthermore, the front ends of the third partition 18c and the fourth partition 18d reach the top plate 20. Moreover, each partition 18a to 18d, and the top plate 20, extend from the top of the nozzle chamber 222 to the lower end of the reaction tube 203.

[0068] Then, as Figure 2 As shown, the first nozzle chamber 222a is formed by surrounding the inner tube 12, the first partition 18a, the third partition 18c, and the top plate 20. The second nozzle chamber 222b is formed by surrounding the inner tube 12, the third partition 18c, the fourth partition 18d, and the top plate 20. Furthermore, the third nozzle chamber 222c is formed by surrounding the inner tube 12, the fourth partition 18d, the second partition 18b, and the top plate 20.

[0069] Thus, each nozzle chamber 222a to 222c extends in a top-to-bottom direction with its lower end open and its upper end closed by the wall constituting the top surface of the inner tube 12.

[0070] Furthermore, as described above, the supply slits 235a connecting the first nozzle chamber 222a and the processing chamber 201 are arranged vertically and formed on the peripheral wall of the inner tube 12. Additionally, the supply slits 235b connecting the second nozzle chamber 222b and the processing chamber 201 are arranged vertically and formed on the peripheral wall of the inner tube 12. Furthermore, the supply slits 235c connecting the third nozzle chamber 222c and the processing chamber 201 are arranged vertically and formed on the peripheral wall of the inner tube 12.

[0071] <Gas Nozzle 340a~340e>

[0072] The gas nozzles 340a-340e, which constitute part of the gas injectors 50a-50e, extend in the vertical direction, such as... Figure 2 The nozzles are respectively located in nozzle chambers 222a to 222c. Specifically, gas nozzle 340a, which is connected to gas supply pipe 310a, and gas nozzle 340b, which is connected to gas supply pipe 310b, are disposed in the first nozzle chamber 222a. Gas nozzle 340c, which is connected to gas supply pipe 310c, is disposed in the second nozzle chamber 222b. Gas nozzle 340d, which is connected to gas supply pipe 310d, and gas nozzle 340e, which is connected to gas supply pipe 310e, are disposed in the third nozzle chamber 222c.

[0073] In this way, a nozzle chamber 222 for accommodating gas injectors 50a to 50e is provided in the processing chamber 201, and at least gas nozzles 340a to 340e of the gas injectors 50a to 50e are accommodated in the nozzle chamber 222, thereby suppressing the mixing of gas in each nozzle chamber 222.

[0074] Gas nozzles 340a~340e, etc. Figure 3 , Figure 4 The nozzles shown are respectively configured as long, cylindrical nozzles with closed front ends. Furthermore, in Figure 3 , Figure 4 In this example, only gas nozzle 340a is shown, but gas nozzles 340b to 340e are all made of the same material except for the size of the nozzle.

[0075] The gas nozzles 340a to 340e include: first injection holes 60a to 60e for supplying gas, which are disposed along the length direction L of the gas nozzles 340a to 340e in the interval for arranging a plurality of wafers 200; and a plurality of second injection holes 61a to 61e, which are provided at the front end of the gas nozzles 340a to 340e to be inclined relative to the length direction L with an area smaller than the flow path cross-sectional area A of the gas nozzles 340a to 340e.

[0076] Furthermore, in this embodiment, gas nozzles 340a to 340e are cylindrical long nozzles with a fixed inner diameter at each position along the length direction L. Therefore, the flow path cross-sectional area A is the same at each position along the length direction L. However, when the inner diameter at each position along the length direction L of the gas nozzles 340a to 340e is not fixed and the flow path cross-sectional area A is different at each position along the length direction L, the area "smaller than the flow path cross-sectional area A of the gas nozzles 340a to 340e" is set to be smaller than the smallest flow path cross-sectional area A.

[0077] When the gas nozzles 340a to 340e are constructed using quartz (SiO2), the first injection holes 60a to 60e and the second injection holes 61a to 61e can be processed using a carbon dioxide (CO2) laser. Furthermore, when the outer diameter of the gas nozzles 340a to 340e is very small, it is difficult to open the nozzle at an angle relative to the length direction L using a carbon dioxide (CO2) laser. However, by setting the outer diameter of the nozzle to a certain size (e.g., Φ18mm or more), it is possible to open the nozzle at an angle relative to the length direction using a carbon dioxide (CO2) laser.

[0078] In addition, the second injection holes 61a to 61e are not limited to being perpendicular to the cross-section of the surface of the gas nozzles 340a to 340e (i.e., in the wall thickness direction of the gas nozzles 340a to 340e), but may also be oblique to the cross-section of the surface of the gas nozzles 340a to 340e.

[0079] Furthermore, the second injection holes 61a to 61e are not limited to being straight through the internal flow path, but can also be non-linear and curved through. In this case, the opening direction of the second injection holes 61a to 61e is defined by the direction of the flow path at the outlet, that is, the direction perpendicular to the tangential surface at the outlet.

[0080] Existing gas nozzles only have gas injection holes on the side sections, lacking those at the front. This causes gas stagnation near the nozzle's tip, making it difficult to equalize the gas supply from the side injection holes along the nozzle's length. Furthermore, the absence of injection holes at the front results in higher internal pressure within the nozzle. Consequently, even when ozone (O3) is supplied, the high internal pressure causes ozone (O3) to decay, further hindering the equalization of ozone (O3) supply along the nozzle's length.

[0081] In contrast, the gas nozzles 340a to 340e of this embodiment are provided with a plurality of second injection holes 61a to 61e at their front ends. Therefore, it is possible to suppress the stagnation of gas near the front ends of the gas nozzles 340a to 340e, and the gas supply from the first injection holes 60a to 60e can be equalized in the longitudinal direction of the nozzle without changing the diameter of the first injection holes 60a to 60e from the existing configuration.

[0082] In addition, multiple second injection holes 61a-61e are provided at the front end of the gas nozzles 340a-340e, thereby reducing the internal pressure of the gas nozzles 340a-340e. This allows the attenuation of ozone (O3) to be suppressed when ozone (O3) is supplied from the gas nozzles 340a-340e, and the supply of ozone (O3) can be made equal along the length of the nozzle.

[0083] Furthermore, regarding the second injection holes 61a-61e, when they are set to open perpendicularly to the length direction L, the gas is injected from the second injection holes at a very high flow rate. However, in this embodiment, since they are set to open obliquely to the length direction L, the gas flow in the second injection holes 61a-61e is deflected, and the flow rate can be reduced even using the same opening area as in the case of a perpendicular opening. As a result, excessive pressure drop in the gas nozzles 340a-340e or excessive decrease in the flow rate of the gas injected from the first injection holes 60a-60e can be suppressed. Therefore, the gas supply from the first injection holes 60a-60e can be equalized along the length direction of the nozzle.

[0084] Here, we will explain the differences in characteristics when ozone (O3) is supplied from the gas nozzle in the above-described substrate processing apparatus, with and without a second injection hole in the gas nozzle. In this explanation, we show the conditions under which the temperature inside the processing chamber is set to 400°C, the pressure inside the processing chamber is set to 103 Pa, and the outer diameter of the gas nozzle is set to... Set the orifice diameter of the first injection hole of the gas nozzle to An example of a case where a mixture of ozone (O3) and oxygen (O2) is supplied to the gas nozzle at a rate of 25 slm.

[0085] Figure 5 It is a graph showing the relationship between the substrate position and the O3 concentration (mole fraction) in the first injection hole of the gas nozzle. Figure 5 The vertical axis of the graph represents the position of the substrates (wafers) arranged in a vertical direction. The upper part of the graph corresponds to the upper part of the arrangement direction (vertical direction), and the lower part of the graph corresponds to the lower part of the arrangement direction (vertical direction). The substrate position on the vertical axis represents a relative position and has no unit. Figure 5 The horizontal axis of the graph represents ozone (O3) concentration (mole fraction), in units of [AU]. [AU] is an arbitrary unit, representing the ratio of measurements in the same measurement system.

[0086] like Figure 5 As shown in the graph, it can be seen that the difference in O3 concentration between the upper and lower sides of the substrate alignment direction (vertical direction) is smaller when there is a second injection hole (solid line) compared to when there is no second injection hole (dashed line). In the absence of a second injection hole (dashed line), the ozone (O3) concentration decreases significantly as the gas nozzle approaches its tip (above the vertical axis of the graph).

[0087] Figure 6 It is a graph showing the relationship between the substrate position and the pressure in the first injection hole of the gas nozzle. Figure 6 The vertical axis of the curve is as follows Figure 5 Similarly, the graph represents the substrate position of a multi-layered substrate (wafer) arranged in a vertical direction, without units. Figure 6 The horizontal axis of the graph represents pressure, with the unit being [Pa].

[0088] from Figure 6 As shown in the graph, the overall pressure is lower with the second injection hole (solid line) compared to without the second injection hole (dashed line), but the pressure difference between the upper and lower sides of the substrate alignment direction (vertical direction) is smaller. It can be seen that without the second injection hole (dashed line), the pressure drops significantly as the gas nozzle approaches its tip (above the vertical axis of the graph).

[0089] That is, from Figure 5 as well as Figure 6 As can be seen from the curve, when the gas nozzle is provided with a second injection hole, compared with the case where no second injection hole is provided, the attenuation of ozone (O3) can be suppressed, and ozone (O3) can be stably supplied throughout the entire arrangement direction (vertical direction) of the substrate.

[0090] In addition, the front end of the gas nozzles 340a to 340e is formed by a hemispherical top, and the plurality of second injection holes 61a to 61e are located outside the front end of the top, and are arranged in a rotationally symmetrical manner with the length direction L as the axis of symmetry.

[0091] According to this configuration, the deviation of the internal pressure of the gas nozzles 340a to 340e can be reduced, thus helping to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzles.

[0092] In addition, in the gas nozzles 340a to 340e, there are multiple first injection holes 60a to 60e along the length direction L of the gas nozzles 340a to 340e, each having an approximately equal opening area, and each of the multiple second injection holes 61a to 61e has an approximately equal opening area less than one of the opening areas of the multiple first injection holes 60a to 60e.

[0093] In this way, by setting the opening areas of the plurality of first injection holes 60a to 60e to be approximately equal, it is easy to supply gas evenly relative to the wafer 200 which is maintained in a state of multiple layers arranged in a horizontal orientation in a vertical direction.

[0094] Furthermore, by setting each of the plurality of second injection holes 61a to 61e to an approximately equal opening area below the opening area of ​​one of the plurality of first injection holes 60a to 60e, the deviation of the internal pressure of the gas nozzles 340a to 340e can be reduced, thus helping to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0095] Furthermore, "approximately equal opening areas" refers to a state where the ratio of the smallest opening area to the largest opening area is more than 90%.

[0096] In addition, the gas nozzles 340a to 340e have a flow-aiding interval (preparation interval) S between the inlet of the supplied gas and the first injection hole 60a to 60e closest to the inlet, and are configured such that the total opening area of ​​the plurality of second injection holes 61a to 61e is greater than 0% and less than 3% of the flow path cross-sectional area A of the flow-aiding interval S.

[0097] Furthermore, in this embodiment, regarding the gas nozzles 340a to 340e, the gas nozzles 340a to 340e are cylindrical long nozzles with a fixed inner diameter at each position along the length direction L. Therefore, the flow path cross-sectional area A of the flow aiding section S is the same at each position along the length direction L. However, if the inner diameter of the gas nozzles 340a to 340e is not fixed at each position along the length direction L, and the flow path cross-sectional area A of the flow aiding section S is different at each position along the length direction L, then "greater than 0% and less than 3% of the flow path cross-sectional area A of the flow aiding section S" means greater than 0% and less than 3% of the smallest flow path cross-sectional area A of the flow aiding section S.

[0098] With a gas nozzle of a fixed inner diameter, the gas flows at near-sonic speed within the flow-aiding zone of the nozzle. Within the zone where the side orifice (in this embodiment, the first injection orifice) is open, the velocity decreases faster relative to the pressure as it approaches the front end. The internal pressure deviation of this gas nozzle is at most about 10%.

[0099] In this way, by providing a flow-aiding section S in the gas nozzles 340a to 340e, the velocity of the gas entering the formation area of ​​the first injection holes 60a to 60e can be accelerated within the gas nozzles 340a to 340e, and the velocity of the gas can be easily maintained up to the front end of the gas nozzles 340a to 340e. Therefore, it helps to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0100] Furthermore, by configuring the total opening area of ​​the plurality of second injection holes 61a to 61e to be greater than 0% and less than 3% of the flow path cross-sectional area A of the flow aid section S, compared with the case where the total opening area of ​​the plurality of second injection holes 61a to 61e exceeds 3% of the flow path cross-sectional area A of the flow aid section S, it is possible to suppress excessive drop in internal pressure of gas nozzles 340a to 340e or excessive drop in flow velocity of gas injected from first injection holes 60a to 60e, and it is possible to help to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0101] Furthermore, in the gas nozzles 340a to 340e, the length of the flow-aiding section S is configured to be more than 1 / 3 of the total length of the gas nozzles 340a to 340e.

[0102] By adopting this configuration, the gas velocity entering the formation area of ​​the first injection holes 60a-60e can be accelerated within the gas nozzles 340a-340e, and the gas velocity can be easily maintained up to the front end of the gas nozzles 340a-340e. Therefore, it helps to equalize the gas supply from the first injection holes 60a-60e in the length direction of the nozzle.

[0103] <Gas supply pipes 310a~310e>

[0104] like Figure 1 as well as Figure 2 As shown, gas supply pipe 310a is connected to gas nozzle 340a via nozzle support 350a. Gas supply pipe 310b is connected to gas nozzle 340b via nozzle support 350b. Gas supply pipe 310c is connected to gas nozzle 340c via nozzle support 350c. Gas supply pipe 310d is connected to gas nozzle 340d via nozzle support 350d. Gas supply pipe 310e is connected to gas nozzle 340e via nozzle support 350e.

[0105] In the gas supply pipe 310a, in the gas flow direction, from the upstream side, there are respectively provided an inactive gas supply source 360a as an inactive supply gas for processing, a mass flow rate controller (MFC) 320a as an example of a flow controller, and a valve 330a for opening and closing. For example, nitrogen (N2) is an inactive gas.

[0106] In the gas supply pipe 310b, a first reaction gas supply source 360b, an MFC 320b, and a valve 330b are provided sequentially from upstream to supply the first reaction gas as the processing gas. Examples of the first reaction gas include a mixture of ozone (O3) and oxygen (O2).

[0107] Additionally, a gas supply pipe 310f for supplying inactive gas is connected downstream of valve 330b in gas supply pipe 310b. In gas supply pipe 310f, an inactive gas supply source 360f, an MFC 320f, and a valve 330f are sequentially provided from upstream to supply inactive gas as the processing gas.

[0108] In the gas supply pipe 310c, a raw material gas supply source 360c, an MFC 320c, and a valve 330c are provided sequentially from upstream to supply raw material gas as the processing gas. Examples of raw material gases include aluminum (Al), silicon (Si), titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), and hafnium (Hf).

[0109] Additionally, a gas supply pipe 310g for supplying inactive gas is connected downstream of valve 330c in gas supply pipe 310c. In gas supply pipe 310g, an inactive gas supply source 360g, an MFC 320g, and a valve 330g are sequentially provided from upstream.

[0110] From the gas supply pipe 310d, in the upstream direction, there are respectively a second reaction gas supply source 360d, an MFC 320d, and a valve 330d, which supply the second reaction gas as the processing gas. Examples of the second reaction gas are hydrogen (H2).

[0111] Additionally, a gas supply pipe 310h for supplying inactive gas is connected downstream of valve 330d in gas supply pipe 310d. In gas supply pipe 310h, an inactive gas supply source 360h, an MFC 320h, and a valve 330h are sequentially provided from upstream to supply inactive gas as processing gas.

[0112] In the gas supply pipe 310e, an inactive gas supply source 360e, an MFC 320e, and a valve 330e are provided sequentially from upstream to supply inactive gas as a processing gas.

[0113] <Control Department 280>

[0114] Figure 7 This is a block diagram showing a substrate processing apparatus 10, wherein the control unit 280 (so-called controller) of the substrate processing apparatus 10 is configured as a computer. The computer includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.

[0115] RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with CPU 121a via internal bus 121e. An input / output device 122, such as a touch panel, is connected to the control unit 280.

[0116] The storage device 121c may be composed of, for example, flash memory or HDD (Hard Disk Drive). The storage device 121c stores in a readable manner a control program that controls the operation of the substrate processing apparatus, and a process flow that records the sequence and conditions of substrate processing, which will be described later.

[0117] The process flow is a combination of steps that enable the control unit 280 to execute the sequence of substrate processing steps described later to obtain a predetermined result, and functions as a program. Hereinafter, the process flow, control program, etc., will also be referred to as a program.

[0118] When the term "program" is used in this specification, it may include only the process unit, only the control program unit, or both.

[0119] RAM121b is configured as a memory area (working area) that temporarily holds programs, data, etc. read from CPU121a.

[0120] I / O port 121d is connected to the aforementioned MFC320a-320g, valves 330a-330g, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, rotating mechanism 267, elevator 115, etc.

[0121] CPU 121a is configured to read and execute control programs from storage device 121c, and read process data from storage device 121c based on inputs such as operation commands from input / output device 122.

[0122] CPU 121a is configured to control the flow rate adjustment of various gases based on MFC 320a to 320g, the opening and closing of valves 330a to 330g, and the opening and closing of APC valve 244 in accordance with the read process flow information. Furthermore, CPU 121a is configured to control the pressure adjustment of APC valve 244 by pressure sensor 245, the start and stop of vacuum pump 246, and the temperature adjustment of heater 207 by temperature sensor. Moreover, CPU 121a is configured to control the rotation of boat 217 by rotating mechanism 267 and the adjustment of its rotation speed, and the lifting and lowering of boat 217 by elevator 115, etc.

[0123] The control unit 280 is not limited to being configured as a dedicated computer, but can also be configured as a general-purpose computer. For example, the control unit 280 of this embodiment can be configured by preparing an external storage device 123 that stores the above-described program and using the external storage device 123 to install programs on a general-purpose computer. Examples of external storage devices include hard disks such as hard disks, optical disks such as CDs, optical discs such as MO drives, and semiconductor memories such as USB memories.

[0124] [effect]

[0125] Next, following the control sequence performed by the control unit 280, use Figure 8 The film formation sequence shown illustrates the general operation of the substrate processing apparatus related to this disclosure. Figure 8 The graph shows the gas supply amount (vertical axis) and gas supply timing (horizontal axis) during the film formation process of this embodiment. In addition, a boat 217 containing a predetermined number of wafers 200 is placed into the reaction tube 203, and the reaction tube 203 is hermetically sealed by a sealing cap 219.

[0126] <Wafer loading and vessel loading>

[0127] Multiple wafers 200 are loaded (wafer loading) into vessel 217. Subsequently, as... Figure 1 As shown, a boat 217 supporting multiple wafers 200 is lifted by a boat lift 115 and moved into the processing chamber 201 (boat loading). In this state, the sealing cap 219 seals the lower end of the reaction tube 203 via an O-ring 220.

[0128] <Pressure and Temperature Adjustment>

[0129] Vacuum pump 246 is used to vent vacuum (depressurize) the processing chamber 201 to achieve the desired pressure (vacuum level) within the space containing the wafer 200. The pressure within the processing chamber 201 is measured by pressure sensor 245, and the APC valve 244 is controlled based on this measured pressure information. The wafer 200 within the processing chamber 201 is heated by heater 207 to achieve the desired temperature. The energization level of heater 207 is controlled based on temperature information detected by a temperature sensor (not shown) to achieve the desired temperature distribution within the processing chamber 201. The wafer 200 is then rotated using rotation mechanism 267. Venting of the processing chamber 201, heating of the wafer 200, and rotation all continue at least until the processing of the wafer 200 is completed.

[0130] <Film Formation Steps>

[0131] Then, proceed with steps 1 through 4 in sequence.

[0132] (Step 1)

[0133] First, a raw material gas is supplied to the wafer 200 inside the processing chamber 201. Here, the raw material gas can be, for example, a source gas of aluminum (Al), silicon (Si), titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), etc.

[0134] Specifically, valve 330c is opened to allow raw material gas to flow into gas supply pipe 310c. The flow rate of the raw material gas is adjusted by MFC 320c and supplied to processing chamber 201 via gas nozzle 340c. The raw material gas is injected from the first injection hole 60c and the second injection hole 61c provided on the gas nozzle 340c, and after being supplied to processing chamber 201, it is exhausted through exhaust pipe 231.

[0135] Thus, a layer comprising elements contained in the raw material gas is formed on the surface of the wafer 200 relative to the raw material gas supplied to the wafer 200.

[0136] At this time, valves 330a, 330e, 330f, 330g, and 330h can also be opened to allow inactive gas to flow into gas supply pipes 310a to 310e. Here, the inactive gas is nitrogen (N2). In this case, the flow rate of the inactive gas is adjusted using MFCs 320a, 320e, 320f, 320g, and 320h, and it is supplied to the processing chamber 201 via gas nozzles 340a to 340e.

[0137] After forming a layer containing elements contained in the raw material gas on the surface of the wafer 200, valve 320c is closed to stop supplying the raw material gas into the processing chamber 201.

[0138] (Step 2)

[0139] Next, a vacuum is applied to the treatment chamber 201 to remove any residual gases. At this time, valves 330a, 330e, 330f, 330g, and 330h are opened to supply inactive gas into the treatment chamber 201, which is then discharged through exhaust pipe 231. This inactive gas acts as a purging gas.

[0140] (Step 3)

[0141] Next, a first reaction gas and a second reaction gas are simultaneously supplied to the wafer 200 within the processing chamber 201. Here, the first reaction gas is a mixture of ozone (O3) and oxygen (O2). The second reaction gas is hydrogen (H2).

[0142] Specifically, valves 320b and 320d are opened, allowing the first and second reactant gases to flow into gas supply pipes 310b and 310d, respectively. The flow rates of the first and second reactant gases are adjusted using MFCs 320b and 320d, and they are supplied to the processing chamber 201 via gas nozzles 340b and 340d. The first reactant gas is injected into the processing chamber 201 from the first injection hole 60b and the second injection hole 61b of gas nozzle 340b. The second reactant gas is injected into the processing chamber 201 from the first injection hole 60d and the second injection hole 61d of gas nozzle 340d. The first and second reactant gases mix and react within the processing chamber 201, and are then exhausted via exhaust pipe 231.

[0143] Therefore, a first reactive gas (a mixture of O3 and O2) and a second reactive gas (H2 gas) are simultaneously supplied to the wafer 200. By simultaneously supplying the first reactive gas (a mixture of O3 and O2) and the second reactive gas (H2 gas) into the processing chamber 201, these gases are thermally activated (excited) in a heated, depressurized environment, thereby generating a water-free oxidized substance (H2O) containing oxygen such as atomic oxygen (O). Furthermore, this oxidized substance is primarily used to perform oxidation treatment on the layer formed on the wafer 200 in step 1.

[0144] After the layer formed on the surface of wafer 200 is oxidized, valves 320b and 320d are closed to stop the supply of the first reaction gas and the second reaction gas to the processing chamber 201.

[0145] (Step 4)

[0146] Finally, a vacuum is applied to the treatment chamber 201 to remove any residual gases. At this time, valves 330a, 330e, 330f, 330g, and 330h are opened to supply inactive gas into the treatment chamber 201, which is then discharged through exhaust pipe 231. This inactive gas acts as a purging gas.

[0147] [Number of times stipulated for implementation]

[0148] By performing the above-described film formation steps asynchronously, i.e., by performing one or more (n) asynchronous cycles, a desired oxide film can be formed on the wafer 200. Preferably, the above-described cycle is repeated multiple times. That is, it is preferable to set the thickness of the layer formed in each cycle to be smaller than the desired film thickness, until the film thickness formed by stacking the layers reaches the desired film thickness, and the above-described cycle is repeated multiple times.

[0149] <After purging and atmospheric pressure recovery>

[0150] After the film-forming step is completed, valves 330a, 330e, 330f, 330g, and 330h are opened to supply inert gas into the treatment chamber 201, and exhaust gas is released through exhaust pipe 231. The inert gas acts as a purge gas. This purges the treatment chamber 201, removing any residual gas and reaction byproducts (subsequent purging). Subsequently, the ambient gas in the treatment chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure inside the treatment chamber 201 returns to normal atmospheric pressure (atmospheric pressure restoration).

[0151] <Unloading the vessel and removing the chip>

[0152] The sealing cap 219 is lowered using the boat lift 115, opening the lower end of the reaction tube 203. Then, the processed wafer 200, supported by the boat 217, is moved from the lower end of the reaction tube 203 to the outside of the reaction tube 203 (boat unloading). After the processed wafer 200 is moved to the outside of the reaction tube 203, it is removed using the boat 217 (wafer removal).

[0153] [Summarize]

[0154] As described above, the gas nozzles 340a to 340e include: first injection holes 60a to 60e for supplying gas, which are provided along the length direction L of the gas nozzles 340a to 340e in the interval where the wafers 200 are arranged; and a plurality of second injection holes 61a to 61e, which are provided at the front end of the gas nozzles 340a to 340e to be inclined relative to the length direction L with an area smaller than the flow path cross-sectional area A of the gas nozzles 340a to 340e.

[0155] In this way, by providing a plurality of second injection holes 61a to 61e at the front end of the gas nozzles 340a to 340e, it is possible to suppress gas stagnation near the front end of the gas nozzles 340a to 340e, and to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle without changing the diameter of the first injection holes 60a to 60e from the existing configuration.

[0156] Furthermore, by providing multiple second injection holes 61a to 61e at the front end of the gas nozzles 340a to 340e, the internal pressure of the gas nozzles 340a to 340e can be reduced. Therefore, even if the gas supplied from the gas nozzles 340a to 340e is ozone (O3), the attenuation of ozone (O3) can be suppressed, and the supply of ozone (O3) can be equalized in the length direction of the nozzle.

[0157] Furthermore, by making the second injection holes 61a-61e open at an angle relative to the length direction L, the gas flow in the second injection holes 61a-61e is deflected, and the flow velocity can be reduced even with the same opening area as in the case of a vertical opening. As a result, excessive pressure drop in the gas nozzles 340a-340e or excessive decrease in the flow velocity of the gas injected from the first injection holes 60a-60e can be suppressed, thus achieving equalization of the gas supply from the first injection holes 60a-60e along the length direction of the nozzle.

[0158] In addition, the front end of the gas nozzles 340a to 340e is composed of a hemispherical top, and the multiple second injection holes 61a to 61e are located outside the front end of the top and are arranged in a rotationally symmetrical manner with the length direction L as the axis of symmetry.

[0159] By adopting this configuration, the deviation of the internal pressure of the gas nozzles 340a to 340e can be reduced, thus helping to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0160] In addition, in the gas nozzles 340a to 340e, there are multiple first injection holes 60a to 60e along the length direction L of the gas nozzles 340a to 340e, each having an approximately equal opening area, and each of the multiple second injection holes 61a to 61e has an approximately equal opening area below the opening area of ​​one of the multiple first injection holes 60a to 60e.

[0161] In this way, by setting the opening areas of the plurality of first injection holes 60a to 60e to be approximately equal, it is easy to supply gas evenly relative to the wafer 200 which is maintained in a state of multiple layers arranged in a horizontal orientation in the vertical direction.

[0162] Furthermore, by setting each of the plurality of second injection holes 61a to 61e to an approximately equal opening area less than one opening area within the plurality of first injection holes 60a to 60e, the deviation of the internal pressure of the gas nozzles 340a to 340e can be reduced, thus helping to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0163] In addition, the processing chamber 201 has a nozzle chamber 222 that houses the gas injectors 50a to 50e. By configuring it in this way, gas mixing between the nozzle chambers 222 can be suppressed.

[0164] In addition, the gas nozzles 340a to 340e have a flow-aiding section S from the gas supply inlet to the first injection hole 60a to 60e closest to the inlet, and the total opening area of ​​the plurality of second injection holes 61a to 61e is configured to be greater than 0% and less than 3% of the flow path cross-sectional area A of the flow-aiding section S.

[0165] In this way, by providing a flow-aiding section S in the gas nozzles 340a to 340e, the velocity of the gas that enters into the formation area of ​​the first injection holes 60a to 60e in the gas nozzles 340a to 340e can be accelerated, and the velocity of the gas can be easily maintained up to the front end of the gas nozzles 340a to 340e. Therefore, it helps to equalize the gas supply from the first injection holes 60a to 60e in the length direction of the nozzle.

[0166] Furthermore, by configuring the total opening area of ​​the plurality of second injection holes 61a to 61e to be greater than 0% and less than 3% of the flow path cross-sectional area A of the flow aid section S, compared with the case where the total opening area of ​​the plurality of second injection holes 61a to 61e exceeds 3% of the flow path cross-sectional area A of the flow aid section S, it is possible to suppress excessive drop in internal pressure of gas nozzles 340a to 340e or excessive drop in flow velocity of gas injected from first injection holes 60a to 60e. Therefore, it is possible to help to equalize the gas supply from first injection holes 60a to 60e in the length direction of the nozzle.

[0167] Furthermore, in the gas nozzles 340a to 340e, the length of the flow-aiding section S is configured to be more than 1 / 3 of the total length of the gas nozzles 340a to 340e.

[0168] By adopting this configuration, the gas velocity entering the formation area of ​​the first injection holes 60a-60e can be accelerated within the gas nozzles 340a-340e, and the gas velocity can be easily maintained up to the front end of the gas nozzles 340a-340e. Therefore, it helps to equalize the gas supply from the first injection holes 60a-60e in the length direction of the nozzle.

[0169] <Variation Example 1>

[0170] The shape of the gas nozzle is not limited to, for example Figure 3 The cylindrical nozzle shown, with a closed front end and a fixed inner diameter, can also be configured as follows: Figure 9 As shown in the gas nozzle 340f, its inner diameter tapers from the inlet toward the front end, with only the inner diameter of the front end 65 expanding in a spherical shape.

[0171] The gas nozzle 340f has a plurality of first injection holes 60f formed along the length direction L of the gas nozzle 340f, and a plurality of second injection holes 60f formed in the front end portion 65 of the gas nozzle 340f.

[0172] Alternatively, in the gas nozzle 340f, the front end 65 can be formed with porous quartz instead of forming a plurality of second injection holes 60f at the front end 65.

[0173] <Variation Example 2>

[0174] When the gas nozzle has a hole at its tip that opens toward the length of the gas nozzle, the opening area of ​​the hole is preferably smaller than the opening area of ​​any one of the plurality of second injection holes.

[0175] By adopting this configuration, it is possible to suppress the amount of gas ejected from the opening at a high flow rate in the longitudinal direction of the gas nozzle, and to suppress excessive drop in the internal pressure of the gas nozzle or excessive drop in the flow rate of the gas ejected from the first injection hole. Therefore, it helps to equalize the amount of gas supplied from the first injection hole in the longitudinal direction of the nozzle.

[0176] The above describes various typical embodiments of this disclosure, but this disclosure is not limited to these embodiments and can be appropriately modified without departing from the spirit of this disclosure. For example, the front end of the gas nozzle is not limited to a hemispherical shape, but can also be a polyhedron, a shape that expands upward using a combination of planes and curved surfaces, and can be completely flat or concave.

[0177] For example, the substrate processing apparatus in the embodiments of this disclosure is not limited to semiconductor manufacturing apparatuses for manufacturing semiconductors, but can also be applied to apparatuses for processing glass substrates, such as LCD devices. Furthermore, substrate processing includes, for example, CVD, PVD, processes for forming oxide or nitride films, processes for forming films including metals, annealing, oxidation, nitriding, diffusion, etc. In addition, it can naturally be applied to various substrate processing apparatuses such as exposure apparatuses, coating apparatuses, drying apparatuses, and heating apparatuses.

[0178] <Preferred aspects of this disclosure>

[0179] The preferred aspects of this disclosure are appended below.

[0180] [Appendix 1]

[0181] The substrate processing apparatus includes:

[0182] Processing room;

[0183] A substrate holder arranging and holding multiple substrates, disposed within the processing chamber; and

[0184] A gas injector having a tube extending along the direction in which the plurality of substrates are arranged, supplies gas into the processing chamber.

[0185] The gas injector has: a first injection hole for supplying gas, which is disposed along the length direction of the tube in the interval for arranging the plurality of substrates; and a plurality of second injection holes, which are configured to open at the front end of the tube at an angle relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube.

[0186] [Appendix 2]

[0187] In the substrate processing apparatus in Appendix 1,

[0188] The front end of the tube is formed by a hemispherical top.

[0189] The plurality of second injection holes are located outside the front end of the top and are configured to be rotationally symmetric about the length direction as an axis of symmetry.

[0190] [Appendix 3]

[0191] In the substrate processing apparatus of Appendix 1 or 2,

[0192] The first injection hole is provided in multiple parts along the length of the pipe, each having an approximately equal opening area.

[0193] Each of the plurality of second injection holes has an opening area that is substantially equal to that of one of the plurality of first injection holes.

[0194] [Appendix 4]

[0195] In any of the substrate processing apparatuses described in Appendices 1 to 3

[0196] The processing chamber has an injector chamber that houses the gas injector.

[0197] [Appendix 5]

[0198] In any of the substrate processing apparatuses described in Appendices 1 to 4

[0199] The tube has a flow-aiding section from the inlet of the supplied gas to the first injection hole closest to the inlet.

[0200] The total opening area of ​​the plurality of second injection holes is greater than 0% and less than 3% of the flow path cross-sectional area of ​​the flow aid section.

[0201] [Appendix 6]

[0202] In any of the substrate processing apparatuses described in Appendices 1 to 5

[0203] When the front end of the tube has a hole that opens toward the length direction, the opening area of ​​the hole is smaller than the opening area of ​​any one of the plurality of second injection holes.

[0204] [Appendix 7]

[0205] In any of the substrate processing apparatuses described in Appendices 1 to 6

[0206] The tube has a flow-aiding section between the inlet of the supplied gas and the first injection hole closest to the inlet.

[0207] The length of the flow-aiding section is more than 1 / 3 of the total length of the pipe.

[0208] [Appendix 8]

[0209] Methods for manufacturing semiconductor devices include:

[0210] A process for moving substrates into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising the processing chamber, a substrate holding member disposed within the processing chamber and arranging and holding a plurality of substrates, and a gas injector having a tube extending along the direction of the arrangement of the plurality of substrates and supplying gas into the processing chamber, the gas injector having a first injection hole disposed along the length direction of the tube in the section for which the plurality of substrates are arranged and supplying gas, and a plurality of second injection holes at the front end of the tube being provided to open obliquely relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube; and

[0211] The process of processing the substrate.

[0212] [Appendix 9]

[0213] The gas injector has:

[0214] A tube extending along the direction for arranging multiple substrates;

[0215] A first injection port for supplying gas is disposed along the length of the tube within a region for arranging the plurality of substrates; and

[0216] The second injection hole is configured to open at the front end of the tube at an angle relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube.

Claims

1. A substrate processing apparatus, characterized in that, have: A processing container containing multiple substrates to be processed, arranged internally; and A gas injector having a tube extending along the direction in which the plurality of substrates are arranged, and supplying gas into the processing container. The gas injector has a plurality of first injection holes for supplying gas, which are disposed along the length of the tube in a region for arranging the plurality of substrates; And a plurality of second injection holes, which are configured to open at the front end of the tube at an angle relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube. The front end of the tube is formed by a hemispherical top. The plurality of second injection holes are configured at positions on the top, excluding the front end, to be rotationally symmetrical about the length direction as an axis of symmetry.

2. The substrate processing apparatus according to claim 1, characterized in that, The first injection hole is provided in multiple parts along the length of the tube, each having an approximately equal opening area. Each of the plurality of second injection holes has an opening area that is substantially equal to the opening area of ​​one of the plurality of first injection holes.

3. The substrate processing apparatus according to claim 1, characterized in that, The first injection hole is provided in multiple parts along the length of the tube. The processing container has an injector chamber whose upper end is enclosed by a wall and which houses the gas injector.

4. The substrate processing apparatus according to claim 1, characterized in that, The pipe has a flow-aiding section from the gas supply inlet to the first injection hole closest to the inlet among the plurality of first injection holes. The total opening area of ​​the plurality of second injection holes is greater than 0% and less than 3% of the flow path cross-sectional area of ​​the flow aid section.

5. The substrate processing apparatus according to claim 1, characterized in that, When the front end of the tube has a hole that opens toward the length direction, the opening area of ​​the hole is smaller than the opening area of ​​any one of the plurality of second injection holes.

6. The substrate processing apparatus according to claim 1, characterized in that, The tube has a flow-aiding section between the inlet of the supplied gas and the first injection hole closest to the inlet. The length of the flow-aiding section is more than 1 / 3 of the total length of the pipe.

7. The substrate processing apparatus according to claim 3, characterized in that, It also has a supply port that allows fluid communication between the interior of the ejector chamber and the interior of the processing container. The supply port opens at a position along the length of the first injection hole.

8. The substrate processing apparatus according to claim 7, characterized in that, The processing container has an inner tube and an outer tube, and the injector chamber is located between the inner tube and the outer tube.

9. The substrate processing apparatus according to claim 8, characterized in that, The supply port is provided in a one-to-one correspondence with the plurality of the first injection holes. At a position further forward in the length direction than the supply port of the first injection hole corresponding to the foremost side in the length direction, there is no opening that allows direct communication between the interior of the injector chamber and the interior of the processing container.

10. The substrate processing apparatus according to claim 8, characterized in that, The supply port is provided in a one-to-one correspondence with the plurality of substrates. Compared with the supply port on the far end side in the direction in which the substrates are arranged, there is no opening on the far end side in the direction in which the substrates are arranged to allow direct communication between the interior of the ejector chamber and the interior of the processing container.

11. The substrate processing apparatus according to claim 2, characterized in that, The diameter of each of the plurality of second injection holes is equal to the diameter of one of the plurality of first injection holes.

12. The substrate processing apparatus according to claim 1, characterized in that, The tube has a flow-aiding section between the inlet of the supplied gas and the first injection hole closest to the inlet. In the section of the tube where the first injection hole is located, the velocity decreases more rapidly relative to the pressure of the gas as it approaches the front end.

13. A method for manufacturing a semiconductor device, characterized in that, have: A process of moving substrates into a processing container of a substrate processing apparatus, the substrate processing apparatus having the processing container, a substrate holding member disposed within the processing container and arranging and holding a plurality of substrates, and a gas injector having a tube extending along the direction of the arrangement of the plurality of substrates and a hemispherical top provided at the front end of the tube and supplying gas into the processing container, the gas injector having a plurality of first injection holes provided along the length direction of the tube in the section for arranging the plurality of substrates and supplying gas, and a plurality of second injection holes provided at the top, except at the front end, with an area smaller than the flow path cross-sectional area of ​​the tube and inclined relative to the length direction. as well as The process of processing the substrate. The plurality of second injection holes are configured to be rotationally symmetric about the length direction as an axis of symmetry.

14. A substrate processing method, characterized in that, have: A process of moving substrates into a processing container of a substrate processing apparatus, the substrate processing apparatus having the processing container, a substrate holding member disposed within the processing container and arranging and holding a plurality of substrates, and a gas injector having a tube extending along the direction of the arrangement of the plurality of substrates and a hemispherical top provided at the front end of the tube and supplying gas into the processing container, the gas injector having a plurality of first injection holes provided along the length direction of the tube in the section for arranging the plurality of substrates and supplying gas, and a plurality of second injection holes provided at the top, except at the front end, with an area smaller than the flow path cross-sectional area of ​​the tube and inclined relative to the length direction. as well as The process of processing the substrate. The plurality of second injection holes are configured to be rotationally symmetric about the length direction as an axis of symmetry.

15. A gas ejector for supplying gas to a processing container in which a plurality of substrates to be processed are arranged internally, the gas ejector being characterized by comprising: A tube extending along the direction in which the plurality of substrates are arranged; A plurality of first injection holes for supplying gas are disposed along the length of the tube within a region for arranging the plurality of substrates; and Multiple second injection holes are provided at the front end of the tube, and are opened at an angle relative to the length direction with an area smaller than the flow path cross-sectional area of ​​the tube. The front end of the tube is formed by a hemispherical top. The plurality of second injection holes are configured at positions on the top, excluding the front end, to be rotationally symmetrical about the length direction as an axis of symmetry.

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