一种电子束直写的版图拆分方法和电子束直写方法
By dividing the pattern into multiple dose intervals and setting the number of layers to fill, the problem of the inability of existing equipment to correct the electron beam proximity effect point by point was solved, enabling layered electron beam direct writing on existing equipment, thus improving the lithography quality and the lithography effect of critical dimensions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2022-11-25
- Publication Date
- 2026-07-17
AI Technical Summary
Existing electron beam direct writing equipment cannot achieve point-by-point correction of electron beam proximity effect, resulting in lithographic pattern distortion, especially poor linewidth uniformity and edge roughness in small-sized patterns.
The layout is divided into multiple dose intervals. The number of layers to fill is set according to the dose intervals, and empty dose intervals are deleted to obtain a layout file with multiple layers. Electron beam direct writing is performed using a simple layer division method.
Achieving layered electron beam direct writing on existing equipment improves lithography quality, corrects electron beam proximity effect, and enhances lithography quality at critical dimensions and locations.
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Figure CN115712225B_ABST