Method of manufacturing light emitting structure

Abstract

This invention relates to a patterned light-emitting device. The light-emitting structure of this invention includes: a substrate; a sub-pixel stack patterned thereon on the substrate; an insulating material patterned to surround the emitting stack; and a dam patterned to surround the sub-pixel stack and the insulating material. The sub-pixel stack includes an emitting stack between a first electrode layer and a second electrode layer.

Description

Technical Field

[0001] This disclosure generally relates to layers, dam structures, and emitting devices for quantum dot light-emitting diode (QLED) displays. In particular, the present invention relates to the manufacture of high-resolution multicolor displays using solution processing. Background Technology

[0002] In conventional layered light-emitting devices, luminescent material is sandwiched between hole transport layers and electron transport layers, as well as electrodes (e.g., anode and cathode). This structure functions as a diode; when current flows, electroluminescence occurs in the luminescent material, producing light, and one of the electrodes is partially transmitted to allow light extraction. For example, in... Figure 1A In the light-emitting device 100A, a bottom electrode 102 is disposed on a substrate 100, an emitting layer 104 is disposed on the surface of the bottom electrode 102, and a second electrode 106 is disposed on the surface of the emitting layer 104 opposite to the first electrode 102. A bias voltage applied to the electrodes 102 and 106 causes a first charge carrier (e.g., a hole) to be injected from one of the two electrodes into the emitting layer 104, and conversely, charge carriers (e.g., electrons) to be injected into the other electrode. These charge carriers recombine in the emitting layer, causing light to be emitted from the device. An additional layer (such as a charge injection layer, a charge transport layer, or a charge blocking layer) may be disposed between the emitting layer and these electrodes.

[0003] In one example, the layered light-emitting device includes an anode serving as a hole injector, a hole transport layer (HTL) disposed on the anode, a light-emitting material layer (EML) disposed on the HTL, an electron transport layer (ETL) disposed on the EML, and a cathode disposed on the EML, also serving as an electron injector. Additional layers can be introduced to influence the injection, transport, and blocking of electrons and / or holes. When a forward bias voltage is applied between these electrodes, holes and electrons are transported through the HTL and ETL, respectively, within the light-emitting device, and recombine in the EML, thereby emitting light. When the EML comprises organic materials, the light-emitting device is typically referred to as an organic light-emitting diode (OLED) device. When the EML contains nanoparticles, such as quantum dots (QDs), the light-emitting device is typically referred to as a quantum dot light-emitting diode (QLED) or an electroluminescent quantum dot light-emitting diode (ELQLED).

[0004] Different methods have been proposed for fabricating multi-color, high-resolution light-emitting devices with OLEDs and QLEDs. Most methods focus on depositing three different types of materials in three different regions of a substrate, such that the three materials emit three different colors of light (e.g., red (R), green (G), and blue (B)) via electroluminescence. One method applies separate emitting devices that emit red, green, or blue light respectively, which are often referred to as subpixels.

[0005] To maximize pixel efficiency in OLED and QLED displays, the pixel structure is thoroughly optimized to maximize light extraction efficiency. Optimizing the pixel structure may require specialized design to guide the maximum amount of light out of the display device. Some methods focus on reflective surfaces and filler materials to improve extraction efficiency. For example, in displays with... Figure 1A The light-emitting device 100A has a similar structure. Figure 1B The light-emitting device 100B includes a reflector 108 to improve extraction efficiency compared to the light-emitting device 100A. Figure 1C A top view of another light-emitting device 100C, comprising four circular light-emitting elements, is shown. Each circular light-emitting element is structurally similar to... Figure 1B The light-emitting device 100B is similar. However, this method requires the uniform formation of QLED material on a substrate with a raised edge, which is difficult and expensive. Due to the varying thickness across the entire emitting region of the device, this lack of uniform formation often results in uneven formation of the entire sub-pixel (e.g., Figure 1C The luminescence is uneven in 106). In addition, due to the uneven deposition on the substrate with the dam formed, the leakage path caused by the low resistivity path may result in high leakage current.

[0006] The fabrication of multilayer structures requires the layer-by-layer solution deposition of various materials. Orthogonal solvents are typically used to prevent the coating solution from interfering with the underlying layers. Orthogonal solvents are solvents with significantly different polarities, such as ethanol and hexane. Therefore, a film deposited with ethanol is unlikely to be affected by materials subsequently deposited in a hexane solution, and vice versa. However, such a solution may only be effective for planar structures without any dikes. Furthermore, during the deposition of nonpolar coating solutions, if the dikes are hydrophobic / lipophilic, the coating solution may preferentially wet the dikes rather than the QLED surface, potentially leading to the formation of thicker films near the dikes, which can be detrimental to device efficiency and luminescence uniformity.

[0007] For example, in Figure 1D In the light-emitting device 100D, a bottom electrode 102 is disposed on a substrate 100, a dam 108 is formed around the bottom electrode 102 to create a cavity above the bottom electrode 102, and an emitting layer 104 is disposed on the bottom electrode 102 and has a non-uniform thickness near the dam 108. Figure 1DAs shown, when material is deposited onto a substrate containing a dike using a solution, the material tends to accumulate at the transition between the edges of substrate 100 and dike 108. This non-uniform drying of the wet solvent film is commonly referred to as the "coffee ring" effect, which leads to poor device performance because layer thickness has a significant impact on photoelectric properties, such as significantly affecting light extraction efficiency and uniformity. Similarly, when a polar coating solution is deposited onto a substrate containing a hydrophilic / lipophobic dike, the device efficiency and luminescence uniformity may also be affected due to the use of polar and non-polar solvents during manufacturing. Therefore, it is not possible to prevent this effect on all layers by simply applying polar or non-polar dikes.

[0008] This disclosure provides patterned EML and complementary insulating layers to improve the manufacture of high-efficiency, high-resolution full-color luminescent display panels. Summary of the Invention

[0009] This disclosure relates to a light-emitting display using quantum dot electroluminescent materials in an LED array.

[0010] According to a first aspect of this disclosure, the light-emitting structure includes: a substrate; a sub-pixel stack patterned thereon on the substrate; an insulating material patterned to surround the emitting stack; and a dam patterned to surround the sub-pixel stack and the insulating material. The sub-pixel stack includes an emitting stack between a first electrode layer and a second electrode layer.

[0011] In one embodiment of the first aspect, the emitting stack comprises at least one quantum dot light-emitting material, the quantum dot light-emitting material comprising a plurality of QDs.

[0012] In another embodiment of the first aspect, the emission stack includes an emission layer between a first layered structure and a second layered structure. The first layered structure and the second layered structure each include at least one of a charge injection layer, a charge transport layer, and a charge blocking layer.

[0013] In another embodiment of the first aspect, at least one of the first layered structure, the second layered structure, or the emitting layer is patterned by ultraviolet (UV) induced crosslinking.

[0014] In another embodiment of the first aspect, the insulating material is patterned by UV-induced crosslinking.

[0015] In another embodiment of the first aspect, the insulating material extends over at least a portion of the emitting stack.

[0016] In another embodiment of the first aspect, the light-emitting structure further includes an auxiliary electrode layer deposited on at least a portion of the second electrode layer.

[0017] In another embodiment of the first aspect, the auxiliary electrode layer extends on at least one embankment between two sub-pixel stacks.

[0018] In another embodiment of the first aspect, the light-emitting structure further includes an array of more than one of the sub-pixel stacks emitting different colors. The embankment surrounds each of the more than one sub-pixel stack.

[0019] According to a second aspect of this disclosure, the light-emitting structure includes: a substrate; a first electrode layer patterned on the substrate; a dam patterned to surround the first electrode layer; a first layered structure disposed over the first electrode layer and the dam; an emitting layer patterned on the first layered structure and located over the first electrode layer; an insulating material patterned to surround the emitting layer and extending over the dam; a second layered structure disposed over the emitting layer and the insulating material; and a second electrode layer disposed over the second layered structure. Each of the first and second layered structures includes at least one of a charge injection layer, a charge transport layer, or a charge blocking layer.

[0020] In one embodiment of the second aspect, the emitting layer includes at least one quantum dot light-emitting material, which includes a plurality of quantum dots (QDs).

[0021] In another embodiment of the second aspect, the emitting layer is patterned by UV-induced crosslinking.

[0022] In another embodiment of the second aspect, the insulating material is patterned by UV-induced crosslinking.

[0023] In another embodiment of the second aspect, the insulating material extends over at least a portion of the emitting layer.

[0024] In another embodiment of the second aspect, the light-emitting structure further includes an auxiliary electrode layer deposited on at least a portion of the second electrode layer.

[0025] In another embodiment of the second aspect, the auxiliary electrode layer extends over the embankment.

[0026] According to a third aspect of this disclosure, a method for manufacturing a light-emitting structure includes: patterning a first electrode layer on a substrate; patterning a dam on the substrate to surround the first electrode layer; depositing a first layered structure over the first electrode layer and the dam; patterning an emitting layer over the first layered structure and the first electrode layer; patterning an insulating material to surround the emitting layer and extend over the dam; depositing a second layered structure over the emitting layer and the insulating material; and depositing a second electrode layer over the second layered structure. The first layered structure and the second layered structure each include at least one of a charge injection layer, a charge transport layer, or a charge blocking layer. Attached Figure Description

[0027] The various aspects of the embodiments are best understood from the following detailed description, taken in conjunction with the accompanying drawings. The different features are not drawn to scale. For clarity, the dimensions of the different features may be arbitrarily increased or decreased.

[0028] Figure 1A This is a schematic cross-sectional view of the sub-pixel stack in a prior art light-emitting structure.

[0029] Figure 1B This is a schematic cross-sectional view of another existing light-emitting structure.

[0030] Figure 1C This is a schematic top view of another existing light-emitting structure.

[0031] Figure 1D This is a schematic cross-sectional view of another existing light-emitting structure.

[0032] Figure 2A This is a schematic cross-sectional view of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure.

[0033] Figure 2B This is a schematic cross-sectional view of an example light-emitting structure according to an exemplary embodiment of the present disclosure.

[0034] Figure 2C This is a schematic cross-sectional view of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure.

[0035] Figures 3A to 3G This is a schematic diagram illustrating an exemplary method for manufacturing a light-emitting structure according to an exemplary embodiment of the present disclosure.

[0036] Figure 4 This is a schematic cross-sectional view of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure.

[0037] Figures 5A to 5S This is a schematic diagram illustrating an exemplary method for manufacturing a light-emitting structure according to an exemplary embodiment of the present disclosure.

[0038] Figure 6 This is a schematic cross-sectional view of an example light-emitting structure according to an exemplary embodiment of the present disclosure.

[0039] Figure 7A This is a schematic flowchart illustrating an exemplary manufacturing method of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure.

[0040] Figure 7B It shows the use of Figure 7A A schematic cross-sectional view of an exemplary light-emitting structure manufactured by an exemplary manufacturing method.

[0041] Figure 8 This is a schematic flowchart illustrating an exemplary method of patterning a light-emitting structure layer according to an exemplary embodiment of the present disclosure. Detailed Implementation

[0042] The following disclosure contains specific information relating to the exemplary embodiments described herein. The accompanying drawings and detailed descriptions are for illustrative purposes only. However, this disclosure is not limited to these exemplary embodiments. Other variations and embodiments of this disclosure will be apparent to those skilled in the art.

[0043] Unless otherwise indicated, the same or corresponding elements in the accompanying drawings may be represented by the same or corresponding reference numerals. Furthermore, the drawings and illustrations in this disclosure are generally not drawn to scale and are not intended to correspond to actual relative dimensions.

[0044] For consistency and ease of understanding, the same features are identified by the same numbers in the example figures (although not shown in some examples). However, features may differ in other respects in different embodiments and should therefore not be limited to those shown in the figures.

[0045] This description uses the phrases “in one embodiment” or “in some embodiments,” each of which may refer to one or more of the same or different embodiments. The term “comprising” means “including but not limited to,” and specifically indicates an open inclusion or member in the said combinations, groups, series, and equivalents. The expression “at least one of A, B, and C” or “at least one of the following: A, B, and C” means “only A, or only B, or only C, or any combination of A, B, and C.”

[0046] Furthermore, for purposes of explanation and non-restriction, specific details such as functional entities, technologies, protocols, and standards are described to provide an understanding of the described technologies. In other instances, detailed descriptions of well-known methods, technologies, systems, architectures, etc., are omitted to avoid unnecessary obfuscation with details.

[0047] This disclosure relates to a light-emitting display that incorporates quantum dot electroluminescent materials in an array of light-emitting diodes (LEDs). While one or more embodiments of this disclosure are described with reference to displays having QLED pixels, the exemplary embodiments provided herein do not limit the scope of the invention and can also be applied to other displays and structures, such as OLED structures. In one or more embodiments of this disclosure, a "top" emission (TE) structure is employed. The TE structure relates to light emitted from the side of the TE structure opposite to the glass substrate on which the TE structure is disposed.

[0048] In one or more embodiments of this disclosure, the fabrication of the TE device involves a layer of conductive reflective material, typically made of a metal (e.g., silver or aluminum) deposited on a glass substrate, having an HTL layer, an emitter layer on the HTL layer, an ETL layer on the emitter layer, and a transparent electrode layer on the ETL layer on the ETL layer. However, in this disclosure, for the sake of brevity, the HTL, ETL, and emitter layer are referred to as the emitter layer.

[0049] Figure 2A This is a schematic cross-sectional view of an exemplary light-emitting structure according to an exemplary embodiment of this disclosure. Figure 2A In this embodiment, the exemplary light-emitting structure 200A may include a substrate 200, a sub-pixel stack 203, an insulating material 208, and a dam 210. In one or more embodiments of this disclosure, the sub-pixel stack 203 may include an emission stack 204 disposed between a first electrode layer 202 and a second electrode layer 206, and may be patterned on the substrate 200. The first electrode layer 202 may be patterned on the substrate 200, the insulating material 208 may be patterned to surround the emission stack 204, and the dam 210 may be patterned to surround the sub-pixel stack 203 and the insulating material 208. In other embodiments of this disclosure, the light-emitting structure 200A may include one or more additional layers, which may be one or more transport layers (e.g., hole transport layers, electron transport layers) and / or one or more injection layers (e.g., hole injection layers, electron injection layers). In other embodiments of this disclosure, by carefully selecting the surface size, shape, and reflectivity of the dam, the extraction efficiency of the light-emitting structure 200A can be significantly improved compared to a structure without a dam. The subpixel stack 203 surrounded by the dike 210 can be of any shape and configured in many different layouts.

[0050] In one or more embodiments of this disclosure, substrate 200 may include, for example, a glass substrate and a polymer substrate. In other embodiments, substrate 200 may include materials such as polyimide, polyethylene, polyethylene-like polymers, polyester, polycarbonate, polyethersulfone, polypropylene, and / or polyetheretherketone. Substrate 200 may be of any suitable shape and size. In some embodiments, the size of substrate 200 makes it possible to provide more than one light-emitting device thereon. In one embodiment, the main surface of substrate 200 may provide a region for a plurality of light-emitting structures of this disclosure to form a sub-pixel of a pixel. In another embodiment, the main surface of substrate 200 may provide a region for forming a plurality of pixels thereon, each pixel comprising a sub-pixel arrangement of light-emitting structures.

[0051] In one or more embodiments of this disclosure, the first electrode layer 202 may be reflective and metallic. The second electrode layer 206 may be a transparent or translucent electrode. In other embodiments, the first electrode layer 202 may be a transparent or translucent electrode, while the second electrode layer 206 may be a reflective metal. The emitting stack 204 may be deposited on the first electrode layer 202 by solution deposition using techniques such as spin coating, slot die coating, blade coating, spray coating, or inkjet printing. The second electrode layer 206 may be deposited on the emitting stack 204. The subpixel stack 203 may be deposited using techniques such as sputter coating, thermal evaporation, spin coating, slot die coating, blade coating, spray coating, or inkjet printing.

[0052] In one or more embodiments of this disclosure, the first electrode layer 202 may serve as the anode, and the second electrode layer 206 as the cathode. When a forward bias voltage is applied to the first electrode layer 202 and the second electrode layer 206, light is emitted when holes and electrons recombine in the emitting stack 204. The exemplary embodiments described above regarding the first electrode layer 202 (e.g., the anode) and the second electrode layer 206 (e.g., the cathode) may be reversed, wherein the first electrode layer 202 may serve as the cathode and the second electrode layer 206 may serve as the anode, to produce an "inverted device". This disclosure is equally applicable to any of the above-described device structures.

[0053] In one or more embodiments of this disclosure, the first electrode layer 202 and the second electrode layer 206 may comprise one or more metals (e.g., aluminum, gold, silver, platinum, magnesium, etc., and any alloys thereof) or metal oxides (e.g., indium tin oxide (ITO), indium-doped zinc oxide (IZO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), indium-doped cadmium oxide, etc.). The first electrode layer 202 and the second electrode layer 206 may also be provided in any suitable configuration. For example, the first electrode layer 202 and the second electrode layer 206 may address thin-film transistor (TFT) circuits.

[0054] In one or more embodiments of this disclosure, the emitting stack 204 may further include an emitting layer, a first layered structure, and a second layered structure, each of which may be patterned. In one embodiment, at least one of the first layered structure, the second layered structure, or the emitting layer is patterned by ultraviolet (UV)-induced crosslinking. The first layered structure and the second layered structure may each include at least one of a charge injection layer, a charge transport layer, and a charge blocking layer (not explicitly illustrated). The emitting layer may include a crosslinked matrix of one or more crosslinked charge transport materials. The emitting layer may contain quantum dots (QDs), including one or more of the following: InP, CdSe, CdS, CdSe x S 1-x CdTe, Cd x Zn 1−x Se、Cd x Zn 1−x Se y S 1−y ZnSe, ZnS, ZnS x Te 1-x ZnSe x Te 1-x ABX3 form of perovskite, Zn w Cu z In 1−(w+z) S and carbon, where 0 ≤ w, x, y, z ≤ 1 and (w + z) ≤ 1. In some embodiments, the QD can be realized as nanoparticles. In other embodiments, the QD may include ligands. The ligands may be provided on the outer surface of the QD. For example, the QD may include a core, a shell surrounding the core, and ligands surrounding the shell. In other embodiments, these quantum dots may include a core, a shell surrounding the core, and an oxide layer (e.g., an Al2O3 layer or another suitable metal oxide layer) surrounding the shell, and ligands surrounding the oxide layer. In other embodiments, these ligands may be organic materials that assist the QD in being dispersed in a crosslinkable charge transport material for forming the emission layer. In some embodiments, these ligands may include functional groups that can interact with the crosslinkable charge transport material (e.g., through external stimuli such as temperature, pressure, and / or radiation) when the emission layer is formed. Exemplary functional groups of these ligands may include thiols, alkenes, alkynes, and carbonyl and / or carboxyl functional groups. In some embodiments, the QD may include ligands that do not interact with the charge transport material during the formation of the matrix. More specifically, these ligands and the charge transport material may be selected such that the ligands do not interact with the charge transport material to bind the QD as part of the formed matrix. In other embodiments, the QD may not include ligands.

[0055] In one or more embodiments, the QD ligands are crosslinked with each other by reacting with linker molecules under ultraviolet light exposure to form the emission layer. Methods for crosslinking QDs are not limited to the embodiments provided herein.

[0056] In one or more embodiments of this disclosure, the insulating material 208 can be patterned with a UV-induced crosslinked charge transport material, which includes a UV-induced crosslinked hole transport material and / or a UV-induced crosslinked electron transport material. Therefore, the matrix of one or more UV-induced crosslinked charge transport materials can be formed from one or more types of crosslinkable materials. These materials include one or more hole transport materials and / or one or more electron transport materials. In some embodiments, the crosslinkable hole transport material can be an effective hole transporter regardless of whether it is crosslinked. In other embodiments, the crosslinkable hole transport material can be an effective hole transporter only after crosslinking. In some embodiments, the crosslinkable electron transport material can be an effective electron transporter regardless of whether it is crosslinked. In other embodiments, the crosslinkable electron transport material can be an effective electron transporter only after crosslinking. In some embodiments, the crosslinked charge transport material can include one or more of hole injection materials, electron injection materials, hole blocking materials, electron blocking materials, and / or interconnect materials (ICMs).

[0057] In some embodiments, the UV-induced crosslinking charge transport material may include at least two portions of a molecule, one portion providing charge transport properties and the other portion providing UV crosslinking capability. Exemplary portions providing charge transport properties include, but are not limited to, tertiary, secondary, and primary aromatic or aliphatic amines, trialkylphosphine, and quinolineates. Exemplary portions providing UV crosslinking capability include, but are not limited to, oxetane, epoxide, thiol, olefin, alkyne, ketone, and aldehyde units. In some embodiments, the two portions may be connected to each other at a distance of less than 20 nm. In some embodiments, the crosslinkable material may be N4,N4'-bis(4-(6-((3-ethyloxetane-3-yl)methoxy)hexyl)phenyl)-N4,N4'-diphenylbiphenyl-4,4'-diamine (OTPD). In some embodiments, one or more photoinitiators may be used to form the emission layer. Thus, the emission layer may include one or more photoinitiators that are materials polymerized by photostimulation. In some embodiments, the photoinitiator may generate one or more free radicals, ions, acids, and / or substances that initiate such polymerization. This photoinitiator can generate one or more (but not limited to) cationic substances and / or free radicals, Brönsted acids, carbium ions, or onium ions by light irradiation. Photoinitiators may include thionium salts and iodonium salts (e.g., triphenylsulfonium trifluoromethanesulfonate and diphenyliodonium trifluoromethanesulfonate).

[0058] In some embodiments, the emitting layer may be configured such that the UV-induced crosslinked charge transport material comprises one or more UV-induced crosslinked hole transport materials. An electron transport layer may be included to induce electron movement within the luminescent structure and across the emitting layer. The electron transport layer may be made of any suitable material. In some embodiments, the electron transport layer may include one or more of the following: ZnO, lithium 8-quinolineate (Liq), LiF, Cs₂CO₃. 3、 Mg x Zn 1−x O (where 0 ≤ x ≤ 1), Al x Zn 1−x O (where 0≤x≤1,2,2',2''-(1,3,5-phenyltriyl)-tris(1-phenyl-1-H-benzimidazole)(TPBi)), TiO2, ZrO2, N4,N4'-bis(naphthyl-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine (VNPB), and 9,9-bis[4-[(4-vinylphenyl)methoxy]phenyl]-N2,N7-bis-1-naphthyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD).

[0059] In some embodiments, the hole transport layer may comprise one or more layers configured to transport holes from an electrode (e.g., an anode) to an emitter layer. The hole transport layer may be made of any suitable material. In some embodiments, hole transport may comprise one or more of the following: poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS); poly(9,9-dioctylfluorene-co-N-(4-sec-butylphenyl)-diphenylamine) (TFB); poly(9-vinylcarbazole) (PVK); poly(N,N'-bis(4-butylphenyl)-N,N'-bisphenylbenzidine) (PolyTPD); V₂O₅; NiO; CuO; WO₃; MoO₃; 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanodimethyl-p-benzoquinone (F4TCNQ); 1,4,5,8,9,11-hexaazatriphenylhexacarbonyl nitrile (HATCN). N4,N4'-bis(4-(6-((3-ethyloxetane-3-yl)methoxy)hexyl)phenyl)-N4,N4'-diphenylbiphenyl-4,4'-diamine (OTPD); N4,N4'-bis(4-(6-((3-ethyloxetane-3-yl)methoxy)hexyloxy)phenyl)-N4,N4'-bis(4-methoxyphenyl)biphenyl-4,4'-diamine (QUPD); and N,N'-(4,4'-(cyclohexane-1,1-diyl)bis(4,1-phenylene))bis(N-(4-(6-(2-ethyloxetane-2-yloxy)hexyl)phenyl)-3,4,5-trifluoroaniline) (X-F6-TAPC). In some embodiments in which the hole transport layer comprises more than one layer, the material of one of the respective layers may be different from the material of one or more of the other layers.

[0060] In some embodiments, the hole transport layer may not contain a crosslinkable transport material. In other embodiments, the hole transport material may include one or more crosslinkable transport materials. In some embodiments where the hole transport material includes one or more crosslinkable transport materials, the crosslinking matrix within the emitter layer may crosslink into (and extend into) the hole transport layer.

[0061] In other embodiments, the light-emitting structure of the present invention may include one or more additional layers. Examples include a hole injection layer and / or an electron injection layer. Exemplary materials suitable for the hole injection layer include, but are not limited to: poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS); MoO3:PEDOT:PSS; V2O5; WO3; MoO3; 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanodimethyl-p-benzoquinone (F4TCNQ); and / or 1,4,5,8,9,11-hexaazatriphenylhexacarbonyl nitrile (HATCN). Exemplary materials suitable for the electron injection layer may include, but are not limited to: lithium 8-quinolineate (Liq); LiF; and / or Cs2CO3.

[0062] In the exemplary light-emitting structure 200A, uniform light emission can be achieved when the aforementioned material near the embankment 210 is filled with insulating material 208 instead of emitting stack 204.

[0063] Figure 2B This is a schematic cross-sectional view of an example light-emitting structure according to an exemplary embodiment of the present disclosure. Figure 2C This is a schematic cross-sectional view of an example light-emitting structure according to an exemplary embodiment of the present disclosure.

[0064] exist Figure 2B In the example, the light-emitting structure 200B can be substantially similar to Figure 2A The exemplary light-emitting structure 200A is shown in the figure. The exemplary light-emitting structure 200B may include a light-emitting structure corresponding to the light-emitting structure 200A. Figure 2A The exemplary light-emitting structure 200A in the present disclosure comprises the following structure: substrate 200, sub-pixel stack 203, insulating material 208, and dam 210: substrate 200; sub-pixel stack 203, patterned on substrate 200, having an emitting stack 204 disposed between a first electrode layer 202 and a second electrode layer 206; insulating material 208, patterned to surround the emitting stack 204; and dam 210, patterned to surround the sub-pixel stack 203 and the insulating material 208. Therefore, for the sake of brevity, details of the exemplary light-emitting structure 200B are omitted. Figure 2B The exemplary light-emitting structure 200B in Figure 2AThe difference between the light-emitting structure 200A and the structure 200B is that the structure 200B may include an auxiliary electrode layer 212 disposed on at least a portion of the second electrode layer 206. In some embodiments, the auxiliary electrode layer 212 may be deposited on at least a portion of the second electrode layer 206. In some embodiments, the auxiliary electrode layer 212 may contain a transparent conductor and a metal (e.g., silver or the like) to increase conductivity without impairing light transmission in the effective emission region. In the exemplary light-emitting structure 200B, uniform light emission can be achieved when the aforementioned material near the embankment 210 is filled with an insulating material 208 instead of an emission stack 204.

[0065] exist Figure 2C In the example, the light-emitting structure 200C may include a structure corresponding to Figure 2A The exemplary light-emitting structure 200A has the following structure for the substrate 200, sub-pixel stack 203, insulating material 208, and dam 210: substrate 200; sub-pixel stack 203M patterned on the substrate 200 and having an emitting stack 204M disposed between a first electrode layer 202M and a second electrode layer 206M; insulating material 208M patterned to surround the emitting stack 204M; and dam 210 patterned to surround the sub-pixel stack 203M and the insulating material 208M. Therefore, for simplicity, details of the exemplary light-emitting structure 200C are omitted. Figure 2C As shown, this disclosure Figure 2C The exemplary light-emitting structure 200C in Figure 2A The difference between the light-emitting structure 200A and the structure 200C is that the structure 200C may include an auxiliary electrode layer (212LM or 212RM) configured or deposited to extend on at least one embankment between two sub-pixel stacks. For example, Figure 2CThe exemplary light-emitting structure 200C may show a sub-pixel stack 203M and two sub-pixel stacks 203L and 203R disposed near the sub-pixel stack 203M. The sub-pixel stack 203L may be patterned above the substrate 200 and may have an emitting stack 204L disposed between a first electrode layer 202L and a second electrode layer 206L, an insulating material 208L patterned to surround the emitting stack 204L, and a dam 210 patterned to surround the sub-pixel stack 203L and the insulating material 208L. The sub-pixel stack 203R may be patterned above the substrate 200 and may have an emitting stack 204R disposed between a first electrode layer 202R and a second electrode layer 206R, an insulating material 208R patterned to surround the emitting stack 204R, and a dam 210 patterned to surround the sub-pixel stack 203R and the insulating material 208R. An auxiliary electrode layer 212LM can be configured or deposited to extend on the dam 210 between the two sub-pixel stacks 203L and 203M. Another auxiliary electrode layer 212RM can be configured or deposited to extend on the dam 210 between the two sub-pixel stacks 203M and 203R. Figure 2C The exemplary light-emitting structure 200C in the figure may only show a portion of the two sub-pixel stacks 203L and 203R. However, the structure of each of the two sub-pixel stacks 203L and 203R is similar to the structure of the sub-pixel stack 203M. Therefore, for the sake of brevity, the structural details of the two sub-pixel stacks 203L and 203R are omitted. Figure 2C The exemplary light-emitting structure 200C may include exemplary sub-pixel stacks 203L, 203M, 203R, insulating materials 208L, 208M, 208R, and auxiliary electrode layers 212LM, 212RM in a pixel array configuration. However, the exemplary light-emitting structure 200C may also include one or more sub-pixel stacks, insulating materials, and auxiliary electrode layers in an array with a larger number of pixels. By providing auxiliary electrode layers (212LM or 212RM) in an array with multiple pixels, charge transfer between pixels and charge injection into pixels can be improved to compensate for the potentially low conductivity of the second electrode layers (206L, 206M, 206R). In some embodiments, each auxiliary electrode layer (212LM or 212RM) may contain a metal (e.g., silver) to increase conductivity without impairing light transmission in the effective emission region. In one or more embodiments, two or more auxiliary electrode layers or auxiliary electrodes (212LM, 212RM) may be formed of the same material and / or may be interconnected to form a single auxiliary electrode layer. Uniform light emission can be achieved when the material near the dam (210) is filled with insulating material (208L, 208M, 208R) instead of emitting stack (204L, 204M, 204R).

[0066] Figures 3A to 3G This is a schematic diagram illustrating an exemplary method for manufacturing a light-emitting structure according to an exemplary embodiment of the present disclosure. Figure 3A-3G The exemplary method shown may include actions 300A-300F to provide a similar Figure 2C An exemplary light-emitting structure 300G of the light-emitting structure 200C is shown. Therefore, for the sake of brevity, it is omitted. Figure 3G Details of the 300F light-emitting structure in the image.

[0067] like Figure 3A As shown, in action 300A, the first electrode layer 302 can be patterned on the substrate 300. Figure 3B In action 300B, the embankment 310 can be patterned to surround the first electrode layer 302. Figure 3C In action 300C, the emission stack 304 can be patterned on the first electrode layer 302. Figure 3D In action 300D, insulating material 308 can be configured or deposited on the emission stack 304 and the embankment 310. Figure 3E In action 300E, the insulating material 308 can be patterned to surround the emission stack 304. Figure 3F In action 300F, the second electrode layer 306 can be patterned on the emitter stack 304 and the insulating material 308. Figure 3G In this process, the auxiliary electrode layer 312 may be deposited on at least a portion of the second electrode layer 306 to form an exemplary light-emitting structure 300G. In the exemplary light-emitting structure 300G, uniform light emission can be achieved when the aforementioned material near the embankment 310 is filled with insulating material 308 instead of emitting stack 304.

[0068] Figure 4 This is a schematic cross-sectional view of an example light-emitting structure according to an exemplary embodiment of the present disclosure.

[0069] exist Figure 4In this example, the exemplary light-emitting structure 400A may include a substrate 400, a first electrode layer 402, a first layered structure 404b, an emitting layer 404a, a second layered structure 404c, a second electrode layer 406, an insulating material 408, a dam 410, and an auxiliary electrode layer 412. In one or more embodiments, the first electrode layer 402 may be patterned on the substrate 400. The dam 410 may be patterned to surround the first electrode layer 402. The first layered structure 404b may be disposed above the first electrode layer 402 and the dam 410. The emitting layer 404a may be patterned on the first layered structure 404b and located above the first electrode layer 402. The insulating material 408 may be patterned to surround the emitting layer 404a and extend above the dam 410. In one or more embodiments, the thickness of the insulating material 408 of the emitting layer 404a, which is above (overlapping) the emitting layer 404a, may be the same as the thickness of the emitting layer 404a. In one or more embodiments, the thickness of the insulating material 408 above (overlapping with) the emitting layer 404a may vary slightly between the top of the embankment 410 and the emitting layer 404a. A second layered structure 404c may be disposed above the emitting layer 404a and the insulating material 408. A second electrode layer 406 may be disposed above the second layered structure 404c. An auxiliary electrode layer 412 may be disposed above the second electrode layer 406. In one or more embodiments, the first layered structure 404b and the second layered structure 404c each include at least one of a charge injection layer, a charge transport layer, or a charge blocking layer. In some embodiments, the first layered structure 404b, the second layered structure 404c, and the second electrode layer 406 may not need to be patterned, thus simplifying manufacturing. In one or more embodiments, as... Figure 4 As shown, the insulating material 408 may extend over at least a portion of the emitting layer 404a. In other words, the insulating material 408 and the emitting layer 404a may overlap each other to prevent current leakage.

[0070] Figures 5A to 5S This is a schematic diagram illustrating an exemplary method for manufacturing a light-emitting structure according to an exemplary embodiment of the present disclosure.

[0071] According to one or more embodiments of the method for manufacturing a light-emitting structure disclosed herein, it is possible to... Figures 5A to 5S Actions 500A to 500B, 500E to 500F, 500I to 500J, 500M to 500N, and 500Q, and exemplary light-emitting structures 500C to 500D, 500G to 500H, 500K to 500L, 500O to 500P, and 500R to 500S are shown. Exemplary light-emitting structure 500S may be similar to... Figure 4 The exemplary light-emitting structure 400 is shown in the figure. Therefore, for the sake of brevity, it is omitted. Figure 5SDetails of the exemplary light-emitting structure 500S in the example.

[0072] Figures 5A to 5C A top view of one embodiment of an exemplary manufacturing method according to the present disclosure is shown. In action 500A, a first electrode layer 502 may be configured (e.g., deposited) over the substrate 500. In action 500B, an electrode photomask 514 may be located over the substrate 500. A cross-shading pattern on the electrode photomask 514 prevents light from transmitting through the electrode photomask 514, while blank areas (without the cross-shading pattern) allow light to transmit through the electrode photomask 514. (Refer to...) Figure 5C By passing light through (e.g., UV, not shown) Figure 5B 514 pairs of electrode photomasks in Figure 5A The first electrode layer 502 is exposed, and the first electrode layer 502 can be patterned (e.g., including development, rinsing, and annealing) on ​​the substrate 500, such as... Figure 5C An exemplary light-emitting structure 500C is shown. Figure 5D A cross-sectional view of an exemplary light-emitting structure 500D is shown, which is manufactured by actions 500A and 500B according to the exemplary manufacturing method of this disclosure. Figure 5C A cross-sectional view of an exemplary light-emitting structure 500C.

[0073] Figures 5A to 5G A top view is shown of one embodiment of an exemplary manufacturing method according to this disclosure. Figure 5E In Action 500E, from Figure 5C The patterned first electrode layer 502 of the exemplary light-emitting structure 500C can be Figure 5F In action 500F, it is positioned below the dam photomask 516, allowing the material used to form the dam 510 to be patterned on the substrate 500 and surrounding the first electrode layer 502, such as... Figure 5G An exemplary light-emitting structure 500G is shown. Figure 5F The cross-shading pattern on the embankment mask 516 can prevent light from passing through (e.g., by deposition) the embankment mask 516, while blank areas (without the cross-shading pattern) can allow light to pass through the embankment mask 516. Figure 5H A cross-sectional view of an exemplary light-emitting structure 500H is shown, which is manufactured by actions 500E and 500F according to the exemplary manufacturing method of this disclosure. Figure 5G A cross-sectional view of an exemplary light-emitting structure 500G.

[0074] Figures 5I to 5K A top view is shown of one embodiment of an exemplary manufacturing method according to this disclosure. Figure 5I In Action 500I, in Figure 5GIn the exemplary light-emitting structure 500G, the first layered structure 504b can be configured (e.g., deposited, coated, etc.) on the patterned embankment 510 and the patterned first electrode layer 502. Figure 5J In action 500J, the emission layer photomask 518 can be positioned above the first layered structure 504b configured in action 500I, so that the material used to form the emission layer 504a can be patterned on the first layered structure 504b, such as... Figure 5K An exemplary light-emitting structure of 500K is shown. Figure 5J The cross-shading pattern on the emission layer photomask 518 prevents light from passing through the emission layer through the photomask 518, while blank areas (without cross-shading patterns) allow light to pass through the emission layer photomask 518. Figure 5L A cross-sectional view of an exemplary light-emitting structure 500L is shown, which is manufactured by actions 500I and 500J according to the exemplary manufacturing method of this disclosure. Figure 5K A cross-sectional view of an exemplary light-emitting structure 500K. In one or more embodiments, such as Figure 5L As shown, the emitter layer 504a may be patterned on the first layered structure 504b and is located above the first electrode layer 502. In one or more embodiments, the first layered structure 504b may include at least one of a charge injection layer, a charge transport layer, and a charge blocking layer.

[0075] Figures 5M to 5O A top view is shown of one embodiment of an exemplary manufacturing method according to this disclosure. Figure 5M In the 500m exercise, Figure 5K The patterned emitting layer 504a and the first layered structure 504b in the exemplary light-emitting structure 500K can be Figure 5N In action 500N, the insulating material 508 is placed below the insulating material photomask 520, thus allowing the insulating material 508 to be patterned above the first layered structure 504b, such as... Figure 5O An exemplary light-emitting structure 500O is shown in the figure. Figure 5N The cross-shading pattern on the insulating material photomask 520 prevents light from passing through the insulating material photomask 520, while the blank areas (without the cross-shading pattern) allow light to pass through the insulating material photomask 520. Figure 5P A cross-sectional view of an exemplary light-emitting structure 500P is shown, which is manufactured by actions 500M and 500N according to the exemplary manufacturing method of this disclosure. Figure 5OA cross-sectional view of an exemplary light-emitting structure 500O. In one or more embodiments, insulating material 508 may be patterned on top of the first layered structure 504b and may be patterned to surround and partially overlap the emitting layer 504a, as shown in the exemplary light-emitting structure 500P. In one or more embodiments, the thickness of the insulating material 508 over (overlapping with) the emitting layer 504a may be the same as the thickness of the emitting layer 504a. In one or more embodiments, the thickness of the insulating material 508 over (overlapping with) the emitting layer 504a may be slightly different in the portion between the embankment 510 and the top of the emitting layer 504a.

[0076] Figures 5Q to 5R A top view is shown of one embodiment of an exemplary manufacturing method according to this disclosure. Figure 5Q In action 500Q, the second layered structure 504c can be configured (e.g., deposition, coating, etc.) in Figure 5O The exemplary light-emitting structure 500O is situated on a patterned insulating material 508 and a patterned emitting layer 504a, and a second electrode layer 506 may be configured (e.g., deposited, coated, etc.) on a second layered structure 504c. In one or more embodiments, the second layered structure 504c and the second electrode layer 506 may be configured via deposition, coating, etc., but are not limited to the exemplary configuration techniques provided herein. For simplicity, other techniques are omitted. Further in action 500Q, the material used to form the auxiliary electrode layer 512 may be patterned over a portion of the second electrode layer 506, such that it can be patterned as follows: Figure 5R The exemplary light-emitting structure 500R shows a patterned auxiliary electrode layer 512. The auxiliary electrode layer 512 can be patterned by photolithography techniques for electrode layers; therefore, for the sake of brevity, exemplary techniques for patterning electrode layers are not provided herein. Figure 5S A cross-sectional view of an exemplary light-emitting structure 500S is shown, which is manufactured by action 500Q according to the exemplary manufacturing method of this disclosure. Figure 5R A cross-sectional view of an exemplary light-emitting structure 500R. In one or more embodiments, the second layered structure 504c may include at least one of a charge injection layer, a charge transport layer, and a charge blocking layer. In one or more embodiments, the auxiliary electrode layer 512 may be patterned over a portion of the second electrode layer 506 and the second layered structure 504c, such that light emission from the emitting layer 504a can be transmitted through the translucent second layered structure 504c and the second electrode layer 506.

[0077] Figure 6 This is a schematic cross-sectional view illustrating at least three exemplary sub-pixel stacks of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure.

[0078] exist Figure 6 In this example, the light-emitting structure 600A may include a substrate 600 on which at least three light-emitting structures (e.g., 600R, 600G, 600B) are integrally formed (e.g., patterned, deposited, coated, etc.) Figure 2C The light-emitting structure 200C and Figure 3GThe exemplary light-emitting structure 600A may include an insulating material that partially overlaps with the emitting layer, but is an exception to the existing light-emitting structure 300G. Exemplary light-emitting structures 600R, 600G, and 600B may each include three sub-pixel stacks 603R, 603G, and 603B. Exemplary light-emitting structures 600R, 600G, and 600B may further include an insulating material 608, a dam 610, and an auxiliary electrode layer 612. The three sub-pixel stacks 603R, 603G, and 603B may each include an emitting stack between the first electrode layer 602 and the second electrode layer 606 (e.g., an emitting stack 604R in sub-pixel stack 603R, an emitting stack 604G in sub-pixel stack 603G, and an emitting stack 604B in sub-pixel stack 603B). The emitting stacks 604R, 604G, and 604B may be patterned and emit different colors. The insulating material 608 may be patterned to surround and overlap at least a portion of each of the emitting stacks 604R, 604G, and 604B. The dam 610 may be patterned to surround all sub-pixel stacks 603R, 603G, and 603B and the insulating material 608. In one or more embodiments, the thickness of each insulating material 608 overlapping each emitting stack (604, 604R, 604G, 604B) may be the same as the thickness of each emitting stack (604, 604R, 604G, 604B). In some embodiments, the thickness of each insulating material 608 overlapping each emitting stack (604, 604R, 604G, 604B) may be slightly different in the portion between the dam 610 and the top of each emitting stack (604, 604R, 604G, 604B). An auxiliary electrode layer 612 may be configured (e.g., deposited to extend) over at least a portion of the second electrode layer 606 to improve conductivity while allowing light emission from each of the emitting stacks 604R, 604G, 604B to transmit through the translucent second electrode layer 606. In one or more embodiments, the exemplary light-emitting structure 600A may include an array of more than one sub-pixel stack (e.g., more than one sub-pixel stack 603R, 603G, 604B, etc.) emitting different colors and surrounded by a dam 610. In other embodiments where the emitting stacks (e.g., 604R, 604G, 604B) emit different colors and include a first layered structure and a second layered structure (not explicitly illustrated), and each of the first and second layered structures may include at least one of a charge injection layer, a charge transport layer, or a charge blocking layer, different charge transport layers may be applied to the emitting stacks emitting different colors to achieve maximum performance.

[0079] Figure 7A This is a schematic flowchart illustrating an exemplary manufacturing method of an exemplary light-emitting structure according to an exemplary embodiment of the present disclosure. Figure 7B It shows the use of Figure 7A A schematic cross-sectional view of an exemplary light-emitting structure manufactured by an exemplary manufacturing method.

[0080] exist Figure 7A In the exemplary flowchart 700A, an exemplary sequence of layers for manufacturing an exemplary light-emitting structure according to an exemplary manufacturing method of the present disclosure is illustrated. In the exemplary flowchart 700A, a substrate 700 may be provided, an anode 702 may be patterned on the substrate 700, a dam 710 may be patterned on the anode 702, a hole injection layer 704b1 may be disposed on the dam 710, a hole transport layer 704b2 may be disposed on the hole injection layer 704b1, an emission layer 704a may be patterned on the hole transport layer 704b2, an insulating material 708 may be patterned on the emission layer 704a, an electron transport layer 704c may be disposed on the insulating material 708, and a cathode 706 may be disposed on the electron transport layer 704c.

[0081] exist Figure 7B In the middle, it can be used Figure 7A An exemplary light-emitting structure 700B is manufactured using an exemplary manufacturing method described herein. In the exemplary light-emitting structure 700B, a substrate 700 may be provided, on which an anode 702 may be patterned, a dam 710 may be patterned on the anode 702, a hole injection layer 704b1 may be disposed on the dam 710, a hole transport layer 704b2 may be disposed on the hole injection layer 704b1, an emission layer 704a may be patterned on the hole transport layer 704b2, an insulating material 708 may be patterned on the emission layer 704a, an electron transport layer 704c may be disposed on the insulating material 708, and a cathode 706 may be disposed on the electron transport layer 704c. In one or more embodiments, the insulating material 708 may be patterned not only to surround the emission layer 704a but also to overlap at least a portion of the emission layer 704a. In one or more embodiments, the thickness of the insulating material 708 over (overlapping with) the emission layer 704a may be the same as the thickness of the emission layer 704a. In one or more embodiments, the thickness of the insulating material 708 above (overlapping with) the emitting layer 704a may vary slightly between the top of the embankment 710 and the emitting layer 704a. In other embodiments, the cathode 706 and the electron transport layer 704c may be inverted with the hole transport layer 704b2, the hole injection layer 704b1, and the anode 702 in another exemplary light-emitting structure, as an inverted light-emitting structure (not explicitly illustrated).

[0082] Figure 8 This is a schematic flowchart illustrating an exemplary method for patterning a light-emitting structure layer according to an exemplary embodiment of the present disclosure. Figure 8In the exemplary flowchart 800, an exemplary method is illustrated for patterning some or all layers of a light-emitting structure (e.g., electrodes, emitting layers, insulating materials, dikes, implantation and / or transport layers, etc.) using photolithography. In the exemplary flowchart 800, any layer of the light-emitting structure (e.g., layer X) can be deposited (e.g., spin-coated) on a substrate or a previous layer. The deposited layer X (e.g., photoresist) can be exposed to light (e.g., UV light) to be patterned, such that the exposed and patterned portions of layer X undergo a chemical reaction, thereby making the patterned portions of layer X soluble in a suitable solution. The exposed and patterned portions of layer X can be developed (e.g., with a positive photoresist, where the exposed and patterned portions of layer X are soluble and removed via a chemical reaction; or with a negative photoresist, where the unexposed portions of layer X are soluble and removed via a chemical reaction by a developer) into a predetermined pattern. To stop the chemical reaction between the developer and layer X, the patterned layer X is rinsed together with the substrate / previous layer (e.g., with deionized (DI) water) and may be dried (e.g., spin-dried). The rinsed and dried layer X with a predetermined pattern may be annealed (e.g., baked) to cure the patterned layer X to obtain a more durable patterned layer X. According to exemplary flowchart 800, each subsequent layer may be patterned by photolithography. According to one or more embodiments of this disclosure, according to exemplary flowchart 800, such as... Figures 2A to 2C , Figures 3A to 3G , Figure 4 , Figures 5A to 5S , Figure 6 and Figure 7B The patterning of each layer and / or material described herein. In other embodiments, a range of solution processing techniques may be applied to pattern the materials used for OLED or QLED formation, such as inkjet printing, "stripping" processes, transfer printing, laser ablation, screen printing, and microcontact printing. Solution processing techniques for patterning materials used to form OLEDs or QLEDs are not limited to the exemplary techniques provided herein.

[0083] As can be seen from this disclosure, different techniques can be used to implement these concepts without departing from the scope of the concepts described herein. Although the concepts have been described with specific reference to certain embodiments, those skilled in the art will recognize that changes in form and detail can be made without departing from the scope of those concepts. Thus, the described embodiments are to be considered illustrative rather than restrictive in all respects. It should also be understood that while this disclosure is not limited to the specific embodiments described above, many rearrangements, modifications, and substitutions are possible without departing from the scope of this disclosure.

Claims

1. A method of manufacturing a light emitting structure, characterized by, include: A first electrode layer is patterned on a substrate; Pattern embankments on the substrate to surround the first electrode layer; A first layered structure is deposited on the first electrode layer and the embankment; An emission layer is patterned on the first layered structure and on the first electrode layer; Patterned insulating material is used to surround the emitting layer and extend over the embankment; A second layered structure is deposited on the emitter layer and the insulating material; as well as A second electrode layer is deposited on top of the second layered structure; The first layered structure and the second layered structure each include at least a charge injection layer, a charge transport layer, or a charge blocking layer.

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