一种具有垂直线性响应的TMR全桥磁传感器
By using a heavy metal current channel to inject pulsed current and spin current to flip the reference layer magnetization in a TMR full-bridge magnetic sensor to form a full-bridge structure, the fabrication challenge of vertical linear response was solved, and a high-sensitivity and low-cost magnetic sensor fabrication was achieved.
CN115728682BActive Publication Date: 2026-07-17LANZHOU UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- LANZHOU UNIV
- Filing Date
- 2022-11-17
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies struggle to achieve the vertical linear response of TMR full-bridge magnetic sensors, and their fabrication is also challenging.
Method used
Four sets of MTJ units are connected in a bridge configuration to form a full Wheatstone bridge. Pulse current is injected through a heavy metal current channel to set the magnetization direction of the reference layer. Spin current and auxiliary magnetic field are used to achieve the flipping of the reference layer within the MTJ unit, thus forming a full-bridge structure.
Benefits of technology
The TMR full-bridge magnetic sensor, which achieves vertical linear response, reduces the difficulty of fabrication and production costs, and improves the sensor's sensitivity and temperature stability.
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Figure CN115728682B_ABST
Abstract
本发明公开了一种具有垂直线性响应的TMR全桥磁传感器，涉及磁场探测技术领域，四组MTJ单元组桥式连接形成全惠斯通电桥。重金属电流通道位于传感器基片表面，一个重金属电流通道的上方有两个MTJ单元并共同组成一个MTJ对，至少一个MTJ对串联作为全惠斯通电桥的一个桥臂。通过向重金属电流通道注入脉冲电流产生的自旋轨道力矩和外加辅助磁场的共同作用可以设定相邻桥臂中MTJ单元的参考层的磁化状态。且位于相邻桥臂上的重金属电流通道中脉冲电流的流向相反，导致MTJ单元的参考层磁化状态相反，从而可以实现全桥结构的TMR磁传感器。本发明能够实现垂直线性响应的全桥TMR磁传感器，且制备难度低。
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