一种硅片边缘形貌数据化方法

CN115752220BActive Publication Date: 2026-07-17SHANGHAI ADVANCED SILICON TECH CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI ADVANCED SILICON TECH CO LTD
Filing Date
2022-12-09
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing silicon wafer edge morphology characterization methods cannot accurately characterize the roll-off situation within the entire edge removal area, leading to inaccurate data processing.

Method used

By selecting reference points within the silicon wafer surface, edge roll-off is calculated using both block and overall methods, combined with thickness processing techniques, enabling data-driven characterization of edge morphology.

Benefits of technology

It achieves accurate data characterization of the rolling situation in the edge removal area of ​​silicon wafers, improving the accuracy and consistency of data processing.

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Abstract

本发明公开了一种适用于IC级硅片的边缘形貌数据化方法；通过硅片面内参考点的选择，厚度的处理方式及边缘滚落(ERO)计算方法的选择，得到数据化表征硅片边缘形貌化的方法；实现了对硅片边缘去除区域内的滚落区域的数据化表征。
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