Method and device for identifying the scorching of a semi-conductive shielding material for high voltage cables

Abstract

The application relates to a method and device for identifying the scorching phenomenon of high-voltage cable semiconductive shielding material, computer equipment, a storage medium and a computer program product. The method comprises the following steps: determining an initial processing temperature of a screw extrusion device; the screw extrusion device is used for extrusion processing of the semiconductive shielding material to be measured; during the extrusion of the semiconductive shielding material to be measured by the screw extrusion device, the fluctuation amplitude of the screw torque corresponding to the screw extrusion device is determined after the screw torque reaches balance; in the case that the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the highest processing temperature of the screw extrusion device during the extrusion of the semiconductive shielding material to be measured is determined; in the case that the temperature difference between the highest processing temperature and the initial processing temperature satisfies a preset difference condition, it is determined that the semiconductive shielding material to be measured does not occur the scorching phenomenon during the extrusion processing. The method can improve the identification accuracy of the scorching phenomenon of the semiconductive shielding material.

Description

Technical Field

[0001] This application relates to the field of power technology, and in particular to a method, apparatus, computer equipment, storage medium, and computer program product for identifying scorching phenomena in semi-conductive shielding materials of high-voltage cables. Background Technology

[0002] In the early stages of rubber processing (mixing, storage, etc.), vulcanizing agents are added to the compound. Before the vulcanization process, premature vulcanization spontaneously occurs, a phenomenon known as scorching. Scorched rubber compounds develop numerous cross-links, causing a sharp decrease in fluidity, making subsequent processing difficult, and even harming the performance of rubber products and reducing surface smoothness, ultimately leading to a decline in product usability.

[0003] High-voltage and ultra-high-voltage cables have extremely high requirements for the surface smoothness of their shielding materials, thus imposing stricter requirements on the raw materials, formulations, and production processes. The surface smoothness of the product obtained after extrusion is a key indicator of high-voltage cable shielding materials, directly determining their application voltage rating. Impurities and minute defects on the surface of the high-voltage cable shielding layer can lead to severe partial discharge, causing electrical treeing and posing safety hazards. Currently, the method for determining scorching phenomena during the continuous extrusion of semi-conductive shielding materials for high-voltage cables remains a challenge, resulting in low accuracy in identifying scorching phenomena during continuous extrusion of semi-conductive shielding materials. Summary of the Invention

[0004] Therefore, it is necessary to provide a method, apparatus, computer equipment, computer-readable storage medium, and computer program product for identifying scorch phenomena in high-voltage cable semiconducting shielding materials, which can improve the accuracy of scorch phenomenon identification during the continuous extrusion process of semiconducting shielding materials.

[0005] In a first aspect, this application provides a method for identifying scorching phenomena in semi-conductive shielding materials of high-voltage cables. The method includes:

[0006] Determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested.

[0007] During the process of extruding the semiconductive shielding material to be tested using the screw extrusion equipment, the fluctuation range of the screw torque is determined after the screw torque corresponding to the screw extrusion equipment reaches equilibrium.

[0008] When the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the maximum processing temperature of the screw extrusion equipment is determined during the extrusion of the semiconductive shielding material to be tested.

[0009] If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test did not scorch during the extrusion process.

[0010] In one embodiment, the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extruder; determining the initial processing temperature of the screw extruder includes:

[0011] The melting point of the semiconductive shielding material under test was determined by differential scanning calorimetry and thermogravimetric analysis.

[0012] The initial processing temperature corresponding to each section is determined based on the melting point of the semiconductive shielding material to be tested; the initial processing temperature corresponding to each section is higher than the melting point.

[0013] In one embodiment, each of the segments includes a first segment, a second segment, a third segment, and a fourth segment; determining the initial processing temperature corresponding to each of the segments based on the melting point of the semiconductive shielding material to be tested includes:

[0014] The sum of the melting point and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the first segment;

[0015] The sum of the initial processing temperature corresponding to the first section and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the second section;

[0016] The sum of the initial processing temperature corresponding to the second section and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the third section;

[0017] The initial processing temperature corresponding to the third section is used as the initial processing temperature corresponding to the fourth section.

[0018] In one embodiment, the maximum processing temperature includes the maximum processing temperature corresponding to each of the aforementioned sections; the preset difference condition includes a preset difference threshold; and determining that the semiconductive shielding material under test did not experience scorching during the extrusion process when the temperature difference between the maximum processing temperature and the initial processing temperature meets the preset difference condition includes:

[0019] Determine the temperature difference between the highest processing temperature and the corresponding initial processing temperature for each of the aforementioned sections to obtain the temperature difference for each of the aforementioned sections.

[0020] If the temperature difference corresponding to each of the aforementioned sections is less than or equal to the preset difference threshold, and the highest processing temperature corresponding to each of the aforementioned sections is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested did not experience scorching during the extrusion process.

[0021] In one embodiment, the method further includes:

[0022] Obtain the preset screw torque range corresponding to the screw extrusion equipment;

[0023] Adjust the screw speed of the screw extruder, and when the screw torque corresponding to the screw extruder is within the preset screw torque range, determine the current screw speed corresponding to the screw extruder;

[0024] The current screw speed is taken as the target screw speed corresponding to the screw extrusion equipment;

[0025] The mass of the semiconductive shielding material to be tested, added to the screw extrusion equipment, is determined based on the target screw speed.

[0026] In one embodiment, determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed includes:

[0027] Based on the target screw speed, the screw extrusion equipment is controlled to extrude the sample semiconductive shielding material.

[0028] After all the sample semiconductive shielding material in the screw extruder is extruded, the extrusion time of the screw extruder is determined.

[0029] If the extrusion time meets the preset time range, the target mass is determined based on the mass of the sample semiconductive shielding material, and the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment is obtained.

[0030] Secondly, this application also provides a device for identifying scorching phenomena in semi-conductive shielding materials of high-voltage cables. The device includes:

[0031] The first temperature determination module is used to determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semi-conductive shielding material to be tested.

[0032] The torque determination module is used to determine the fluctuation range of the screw torque after the screw torque of the screw extrusion equipment reaches equilibrium during the process of the screw extrusion equipment extruding the semiconductive shielding material to be tested.

[0033] The second temperature determination module is used to determine the highest processing temperature of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested, when the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold.

[0034] The determination module is used to determine that the semiconductive shielding material under test has not scorched during the extrusion process, provided that the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition.

[0035] Thirdly, this application also provides a computer device. The computer device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to perform the following steps:

[0036] Determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested.

[0037] During the process of extruding the semiconductive shielding material to be tested using the screw extrusion equipment, the fluctuation range of the screw torque is determined after the screw torque corresponding to the screw extrusion equipment reaches equilibrium.

[0038] When the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the maximum processing temperature of the screw extrusion equipment is determined during the extrusion of the semiconductive shielding material to be tested.

[0039] If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test did not scorch during the extrusion process.

[0040] Fourthly, this application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program thereon, which, when executed by a processor, performs the following steps:

[0041] Determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested.

[0042] During the process of extruding the semiconductive shielding material to be tested using the screw extrusion equipment, the fluctuation range of the screw torque is determined after the screw torque corresponding to the screw extrusion equipment reaches equilibrium.

[0043] When the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the maximum processing temperature of the screw extrusion equipment is determined during the extrusion of the semiconductive shielding material to be tested.

[0044] If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test did not scorch during the extrusion process.

[0045] Fifthly, this application also provides a computer program product. The computer program product includes a computer program that, when executed by a processor, performs the following steps:

[0046] Determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested.

[0047] During the process of extruding the semiconductive shielding material to be tested using the screw extrusion equipment, the fluctuation range of the screw torque is determined after the screw torque corresponding to the screw extrusion equipment reaches equilibrium.

[0048] When the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the maximum processing temperature of the screw extrusion equipment is determined during the extrusion of the semiconductive shielding material to be tested.

[0049] If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test did not scorch during the extrusion process.

[0050] The aforementioned method, apparatus, computer equipment, storage medium, and computer program product for identifying scorching phenomena in high-voltage cable semiconductive shielding materials determine the initial processing temperature of a screw extrusion device. The screw extrusion device is used to extrude the semiconductive shielding material under test. During the extrusion process, the fluctuation range of the screw torque after the corresponding screw torque reaches equilibrium is determined. If the fluctuation range is less than a preset fluctuation threshold, the highest processing temperature of the screw extrusion device during the extrusion process is determined. If the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition, it is determined that no scorching phenomenon has occurred in the semiconductive shielding material under test during the extrusion process. Thus, when scorching occurs in the semiconductive shielding material under test during extrusion, the linear macromolecules in the shielding material will undergo a chemical reaction, causing cross-linking. Together, they form a three-dimensional network structure, which leads to a sharp increase in the viscosity of the shielding material and an increase in the screw torque of the screw extruder. Therefore, the fluctuation range of the screw torque during extrusion can directly characterize whether the shielding material has scorched during extrusion. However, some semiconductive shielding materials have good processing fluidity, and after scorching, the fluctuation range of the torque may be less than the preset fluctuation threshold. Therefore, temperature judgment is also required. After scorching, the friction between the shielding materials increases, and the heat accumulation will cause the processing temperature to rise gradually. By judging whether the temperature difference meets the preset difference condition, it is possible to further accurately judge whether scorching has occurred inside the shielding material. Thus, a dual-criteria method is realized to identify the scorching phenomenon of the tested semiconductive shielding material during the extrusion process, and to more accurately judge whether the shielding material has scorched, thereby improving the accuracy of scorching identification during continuous extrusion of semiconductive shielding materials. Attached Figure Description

[0051] Figure 1 This is an application environment diagram of a method for identifying scorching phenomena in a high-voltage cable semiconducting shielding material in one embodiment.

[0052] Figure 2 This is a flowchart illustrating a method for identifying scorching phenomena in a high-voltage cable semiconductive shielding material in one embodiment.

[0053] Figure 3 This is a flowchart illustrating the steps for determining the initial processing temperature for each section of a screw extruder in one embodiment.

[0054] Figure 4 This is a flowchart illustrating a method for identifying scorching phenomena in a high-voltage cable semiconductive shielding material, as described in another embodiment.

[0055] Figure 5This is a schematic diagram illustrating the change in screw torque of a screw extrusion device during the extrusion of a semiconductive shielding material to be tested, as described in one embodiment.

[0056] Figure 6 This is a schematic diagram illustrating the change in screw torque of a screw extrusion device during the extrusion of a semiconductive shielding material to be tested, as described in another embodiment.

[0057] Figure 7 This is a structural block diagram of a device for identifying scorching phenomena in a high-voltage cable semiconducting shielding material in one embodiment.

[0058] Figure 8 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0059] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0060] This application provides a method for identifying scorching phenomena in semi-conductive shielding materials for high-voltage cables, which can be applied to, for example... Figure 1 In the application environment shown, computer device 102 communicates with screw extrusion equipment 104 via a network. Specifically, computer device 102 determines the initial processing temperature of screw extrusion equipment 104; screw extrusion equipment 104 is used to extrude the semiconductive shielding material to be tested; during the extrusion of the semiconductive shielding material by screw extrusion equipment 104, computer device 102 determines the fluctuation range of the screw torque after the corresponding screw torque of screw extrusion equipment 104 reaches equilibrium; if the fluctuation range of the screw torque is less than a preset fluctuation threshold, computer device 102 determines the highest processing temperature of screw extrusion equipment 104 during the extrusion of the semiconductive shielding material; if the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition, computer device 102 determines that the semiconductive shielding material to be tested has not experienced scorching during the extrusion process.

[0061] Among them, the screw extrusion equipment 104 can be a single screw extruder, which includes a feed inlet 1041, a screw 1042, a die head 1043, and a casing 1044.

[0062] The computer equipment can be a terminal, which can be, but is not limited to, various personal computers, laptops, smartphones, tablets, etc.

[0063] In one embodiment, such as Figure 2As shown, a method for identifying scorching phenomena in semiconductive shielding materials of high-voltage cables is provided, which can be applied to... Figure 1 Taking computer device 102 as an example, the following steps are included:

[0064] Step S210: Determine the initial processing temperature of the screw extrusion equipment.

[0065] Among them, the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested.

[0066] Among them, the screw extrusion equipment can be a single screw extruder.

[0067] Among them, the semi-conductive shielding material to be tested can be a high-voltage cable semi-conductive shielding material.

[0068] In practice, the computer equipment can determine the initial processing temperature of the screw extrusion equipment based on the melting point of the semiconductive shielding material to be tested.

[0069] Step S220: During the extrusion of the semiconductive shielding material to be tested by the screw extrusion equipment, determine the fluctuation range of the screw torque after the corresponding screw torque of the screw extrusion equipment reaches equilibrium.

[0070] In practice, the computer equipment can determine the fluctuation range of the screw torque during the period when the screw torque of the screw extrusion equipment remains balanced after the screw torque of the screw extrusion equipment reaches equilibrium.

[0071] Step S230: When the fluctuation range of the screw torque is less than the preset fluctuation threshold, determine the maximum processing temperature of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested.

[0072] In practice, when the fluctuation range of the screw torque is less than or equal to a preset fluctuation threshold, the computer equipment can determine the highest processing temperature of the screw extrusion equipment during the continuous extrusion of the semiconductive shielding material to be tested. However, because temperature has a time lag, the temperature magnitude cannot be determined immediately; the highest processing temperature of the screw extrusion equipment needs to be determined after the processing of the semiconductive shielding material to be tested is completed.

[0073] If the fluctuation range of the screw torque is greater than the preset fluctuation threshold, it is directly determined that the semiconductive shielding material under test has scorched during the extrusion process.

[0074] Step S240: If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test has not scorched during the extrusion process.

[0075] In practice, the computer equipment can determine the temperature difference between the maximum processing temperature and the initial processing temperature. If the temperature difference meets the preset difference condition, it is determined that the semiconductive shielding material under test has not scorched during the extrusion process. Thus, the semiconductive shielding material under test that has not scorched can be screened out as a qualified semiconductive shielding material.

[0076] In the aforementioned method for identifying scorching phenomena in semiconductive shielding materials for high-voltage cables, the initial processing temperature of the screw extrusion equipment is determined. The screw extrusion equipment is used to extrude the semiconductive shielding material under test. During the extrusion process, the fluctuation range of the screw torque is determined after the corresponding screw torque reaches equilibrium. If the fluctuation range of the screw torque is less than a preset fluctuation threshold, the highest processing temperature of the screw extrusion equipment during the extrusion process is determined. If the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition, it is determined that no scorching phenomenon has occurred in the semiconductive shielding material under test during the extrusion process. Thus, when scorching occurs in the semiconductive shielding material under test during extrusion, the linear macromolecules in the shielding material will undergo a chemical reaction, causing them to cross-link and form a three-dimensional network. The complex structure of the shielding material leads to a sharp increase in viscosity, resulting in increased screw torque in the extrusion equipment. Therefore, the fluctuation range of screw torque during extrusion can directly characterize whether scorching occurs in the shielding material. However, some semiconductive shielding materials have good processing fluidity, and after scorching, the torque fluctuation range may be less than the preset fluctuation threshold. Therefore, temperature judgment is also required. After scorching, the friction between the shielding materials increases, and the heat accumulation will cause the processing temperature to gradually rise. By judging whether the temperature difference meets the preset difference condition, it is possible to further accurately determine whether scorching has occurred inside the shielding material. This realizes the dual-criteria method to identify the scorching phenomenon of the tested semiconductive shielding material during the extrusion process, more accurately judges whether the shielding material has scorched, and thus improves the accuracy of scorching identification in the continuous extrusion process of semiconductive shielding materials.

[0077] In one embodiment, the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extrusion equipment; determining the initial processing temperature of the screw extrusion equipment includes: performing melting point tests on the semiconductive shielding material to be tested using differential scanning calorimetry and thermogravimetric analysis to determine the melting point of the semiconductive shielding material to be tested; determining the initial processing temperature corresponding to each section based on the melting point of the semiconductive shielding material to be tested; the initial processing temperature corresponding to each section is higher than the melting point.

[0078] The initial processing temperature is the lower limit of the processing temperature of the screw extrusion equipment.

[0079] The sections include the first section, the second section, the third section, and the fourth section.

[0080] In practice, when determining the initial processing temperature of the screw extrusion equipment, the computer equipment can use differential scanning calorimetry and thermogravimetric analysis to test the melting point of the semiconductive shielding material under test, and determine the melting point of the semiconductive shielding material under test; based on the melting point of the semiconductive shielding material under test, the initial processing temperature corresponding to each section of the screw extrusion equipment is determined; wherein, the initial processing temperature corresponding to each section is higher than the melting point of the semiconductive shielding material under test.

[0081] Among them, such as Figure 3 As shown, the process by which the computer equipment determines the initial processing temperature for each section based on the melting point of the semiconductive shielding material to be tested includes the following steps:

[0082] In step S310, the computer device determines the sum between the melting point and the preset temperature difference to obtain the initial processing temperature corresponding to the first segment.

[0083] The preset temperature difference can be 5 degrees Celsius.

[0084] In step S320, the computer device determines the sum between the initial processing temperature and the preset temperature difference corresponding to the first segment, and obtains the initial processing temperature corresponding to the second segment.

[0085] In step S330, the computer device determines the sum between the initial processing temperature and the preset temperature difference corresponding to the second section, and obtains the initial processing temperature corresponding to the third section.

[0086] In step S340, the computer device uses the initial processing temperature corresponding to the third section as the initial processing temperature corresponding to the fourth section.

[0087] In this embodiment, the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extrusion equipment. The melting point of the semiconductive shielding material to be tested is determined by differential scanning calorimetry and thermogravimetric analysis. Based on the melting point of the semiconductive shielding material, the initial processing temperature corresponding to each section is determined. The initial processing temperature for each section is higher than the melting point. Thus, since different types of semiconductive shielding materials use different matrix resins, their melting points are not entirely the same. If the screw extrusion equipment uses a single processing temperature, the produced semiconductive shielding material strip will have a rough surface due to incomplete melting of the matrix. However, by determining the initial processing temperature corresponding to each section of the screw extrusion equipment based on the melting point of the semiconductive shielding material, and ensuring that the initial processing temperature for each section is higher than the melting point of the semiconductive shielding material, it can be ensured that different types of semiconductive shielding materials can be completely melted and extruded during the extrusion process, improving the surface smoothness of the semiconductive shielding material strip.

[0088] In one embodiment, the maximum processing temperature includes the maximum processing temperature corresponding to each segment; the preset difference condition includes a preset difference threshold; when the temperature difference between the maximum processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test has not scorched during the extrusion process, including: determining the temperature difference between the maximum processing temperature and the corresponding initial processing temperature of each segment to obtain the temperature difference corresponding to each segment; when the temperature difference corresponding to each segment is less than or equal to the preset difference threshold, and the maximum processing temperature corresponding to each segment is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material under test, it is determined that the semiconductive shielding material under test has not scorched during the extrusion process.

[0089] The decomposition temperature or sulfidation temperature of the semiconductive shielding material under test can be obtained by differential scanning calorimetry and thermogravimetric analysis.

[0090] When the computer equipment determines that the temperature difference between the maximum processing temperature and the initial processing temperature meets the preset difference condition, it can determine that the semiconductive shielding material under test has not scorched during the extrusion process. The computer equipment can determine the temperature difference between the maximum processing temperature and the corresponding initial processing temperature for each section, and obtain the temperature difference for each section. If the temperature difference for each section is less than or equal to the preset difference threshold, and the maximum processing temperature for each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material under test, the computer equipment can determine that the semiconductive shielding material under test has not scorched during the extrusion process.

[0091] In this embodiment, the maximum processing temperature includes the maximum processing temperature corresponding to each section; the preset difference condition includes a preset difference threshold; by determining the temperature difference between the maximum processing temperature corresponding to each section and the corresponding initial processing temperature, the temperature difference corresponding to each section is obtained; if the temperature difference corresponding to each section is less than or equal to the preset difference threshold, and the maximum processing temperature corresponding to each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested has not scorched during the extrusion process; thus, due to the severe heat generation caused by mutual friction between the shielding materials during processing, the heat accumulation will cause the processing temperature to rise sharply. When the internal temperature reaches the vulcanization temperature or decomposition temperature, the shielding material will scorch. By judging whether the temperature difference corresponding to each section of the screw extrusion equipment is less than or equal to the preset difference threshold, and judging whether the maximum processing temperature corresponding to each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is possible to quickly and accurately identify whether scorching has occurred during the continuous extrusion process of the semiconductive shielding material. The identification method is simple to operate and has low cost.

[0092] In one embodiment, the method further includes: obtaining a preset screw torque range corresponding to the screw extrusion equipment; adjusting the screw speed of the screw extrusion equipment, and determining the current screw speed corresponding to the screw extrusion equipment when the screw torque corresponding to the screw extrusion equipment is within the preset screw torque range; using the current screw speed as the target screw speed corresponding to the screw extrusion equipment; and determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed.

[0093] The preset screw torque range can be 110 N·m (Newton-meter) to 130 N·m (Newton-meter).

[0094] Before the semiconductive shielding material to be tested is formally extruded using the screw extrusion equipment, the computer room equipment can obtain the preset screw torque range corresponding to the screw extrusion equipment. By adjusting the screw speed of the screw extrusion equipment, when the screw torque corresponding to the screw extrusion equipment is within the preset screw torque range, the current screw speed corresponding to the screw extrusion equipment is determined. The current screw speed is used as the target screw speed corresponding to the screw extrusion equipment, thus obtaining the extrusion parameters of the screw extrusion equipment when formally extruding the semiconductive shielding material to be tested. Finally, the computer equipment can determine the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed.

[0095] The technical solution of this embodiment involves obtaining a preset screw torque range corresponding to the screw extrusion equipment; adjusting the screw speed of the screw extrusion equipment; determining the current screw speed of the screw extrusion equipment when the screw torque is within the preset screw torque range; using the current screw speed as the target screw speed of the screw extrusion equipment; and determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed. Since excessively high screw torque indicates high viscosity of the semiconductive shielding material, severe heat generation from friction between the shielding materials during processing will cause a sharp rise in processing temperature due to heat accumulation. Therefore, controlling the screw speed to keep the screw torque within a certain range effectively reduces the rise in processing temperature, thereby reducing the incidence of scorching of the semiconductive shielding material to be tested. Furthermore, based on the target screw speed, the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment is accurately determined.

[0096] In one embodiment, determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed includes: controlling the screw extrusion equipment to extrude the sample semiconductive shielding material according to the target screw speed; determining the extrusion time of the screw extrusion equipment after all the sample semiconductive shielding material in the screw extrusion equipment has been extruded; and determining the target mass based on the mass of the sample semiconductive shielding material when the extrusion time meets a preset time range, thereby obtaining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment.

[0097] Among them, the sample semiconductive shielding material can be a high-voltage cable semiconductive shielding material of the same type as the semiconductive shielding material to be tested.

[0098] The preset duration can be 3 to 5 minutes.

[0099] In practice, during the process of determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed, the computer equipment can control the screw extrusion equipment to extrude the sample semiconductive shielding material according to the target screw speed. After all the sample semiconductive shielding material in the screw extrusion equipment is extruded, the extrusion time of the screw extrusion equipment is determined. If the extrusion time meets the preset time range, the target mass is determined based on the mass of the sample semiconductive shielding material, and the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment is obtained. The semiconductive shielding material to be tested that meets the target mass is then added to the screw extrusion equipment. The width of the extruded strip in the screw extrusion equipment can be 2 cm, and the thickness can be 1–2 mm.

[0100] Specifically, during the extrusion process of the semiconductive shielding material under test in a screw extruder, scorching of the material generally occurs after prolonged continuous processing. This is because the friction between the shielding materials during processing causes the internal temperature to reach the vulcanization temperature, resulting in scorching. Therefore, to simulate the actual production environment, the semiconductive shielding material needs to be processed continuously for a long time. Based on the target screw speed and initial processing temperature of the screw extruder, the mass of the sample semiconductive shielding material can be determined as m after all the sample semiconductive shielding material has been extruded from the screw extruder, provided that the extrusion time meets the requirement of 3-5 minutes. Since the continuous processing time required for the formal extrusion of the semiconductive shielding material under test is 15-20 minutes, the final target mass is determined to be M, where M = 4m.

[0101] The technical solution of this embodiment controls the extrusion of the sample semiconductive shielding material by controlling the screw extrusion equipment according to the target screw speed. After all the sample semiconductive shielding material in the screw extrusion equipment is extruded, the extrusion time of the screw extrusion equipment is determined. If the extrusion time meets the preset time range, the target mass is determined based on the mass of the sample semiconductive shielding material, and the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment is obtained. In this way, since the scorching phenomenon occurs after a long period of continuous processing, the mass of the semiconductive shielding material to be tested, which needs to be evaluated for scorching phenomenon, is determined by the mass when the extrusion processing time of the sample semiconductive shielding material meets the preset time range corresponding to continuous processing. This allows for a closer approximation of the actual production process to restore the manufacturing process, making the scorching phenomenon identification method more comprehensive, objective, accurate, and practically significant.

[0102] In another embodiment, such as Figure 4 As shown, a method for identifying scorching phenomena in semiconductive shielding materials of high-voltage cables is provided. Taking the application of this method to computer equipment as an example, the method includes the following steps:

[0103] Step S410: The melting point of the semiconductive shielding material to be tested is determined by differential scanning calorimetry and thermogravimetric analysis.

[0104] Step S420: Determine the initial processing temperature corresponding to each section of the screw extrusion equipment based on the melting point of the semiconductive shielding material to be tested.

[0105] Step S430: During the process of extruding the semiconductive shielding material to be tested in the screw extrusion equipment, determine the fluctuation range of the screw torque after the corresponding screw torque of the screw extrusion equipment reaches equilibrium.

[0106] Step S440: When the fluctuation amplitude of the screw torque is less than the preset fluctuation threshold, determine the highest processing temperature corresponding to each section of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested.

[0107] Step S450: Determine the temperature difference between the highest processing temperature and the corresponding initial processing temperature for each section, and obtain the temperature difference for each section.

[0108] In step S460, if the temperature difference corresponding to each section is less than or equal to the preset difference threshold, and the highest processing temperature corresponding to each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested has not scorched during the extrusion process.

[0109] It should be noted that the specific limitations of the above steps can be found in the specific limitations of the method for identifying the scorching phenomenon of a semi-conductive shielding material for high-voltage cables described above.

[0110] To facilitate understanding by those skilled in the art, the following method can be used in practical applications to determine the scorching phenomenon of a semiconductive shielding material to be tested (characterized by semiconductive shielding material 1 to be tested).

[0111] Step S510: The melting point of the semiconductive shielding material to be tested is determined by differential scanning calorimetry and thermogravimetric analysis.

[0112] In the specific implementation, the melting point of the semiconductive shielding material 1 to be tested was determined to be 96 degrees Celsius.

[0113] Step S520: Determine the initial processing temperature corresponding to each section of the screw extrusion equipment based on the melting point of the semiconductive shielding material to be tested.

[0114] In practice, with a preset temperature difference of 5 degrees Celsius, the initial processing temperature for the first section is 101 degrees Celsius, the initial processing temperature for the second section is 106 degrees Celsius, the initial processing temperature for the third section is 111 degrees Celsius, and the initial processing temperature for the fourth section is also 111 degrees Celsius.

[0115] Step S530: Determine the target screw speed corresponding to the screw extrusion equipment.

[0116] In practice, when the preset screw torque range of the screw extrusion equipment is 110 N·m to 130 N·m, the target screw speed is 50 rpm (Revolutions Per Minute).

[0117] Step S540: Determine the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment.

[0118] In practice, when the extrusion time of the screw extruder is 3 to 5 minutes, the mass of the sample semiconductive shielding material is determined to be m = 200 g. When the continuous processing time is 15 to 20 minutes, the final target mass is determined to be M = 4m = 800 g, that is, the mass of the semiconductive shielding material to be tested added to the screw extruder is 800 g.

[0119] In step S550, after the semiconductive shielding material 1 to be tested, which meets the target quality, is added to the screw extrusion equipment, the screw extrusion equipment can continuously extrude the semiconductive shielding material 1 to be tested according to the target screw speed and the initial processing temperature.

[0120] Step S560: During the process of extruding the semiconductive shielding material 1 to be tested using the screw extrusion equipment, determine the fluctuation range of the screw torque after the corresponding screw torque of the screw extrusion equipment reaches equilibrium.

[0121] For the ease of understanding of those skilled in the art, Figure 5 A schematic diagram (partial data) showing the change in screw torque of a screw extruder during the extrusion of the semiconductive shielding material 1 to be tested is provided. It can be seen that the screw torque reaches equilibrium 2 minutes after the addition of the semiconductive shielding material 1.

[0122] Step S570: When the fluctuation range of the screw torque is less than the preset fluctuation threshold, determine the maximum processing temperature of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested.

[0123] like Figure 5 As shown, it can be seen that the fluctuation amplitude of the screw torque is less than the preset fluctuation threshold (the preset fluctuation threshold is 5 N·m in this embodiment). Therefore, the highest processing temperature corresponding to each section of the screw extrusion equipment can be determined during the extrusion of the semiconductive shielding material to be tested.

[0124] The highest processing temperature for the first section is 102.3 degrees Celsius, the initial processing temperature for the second section is 106.9 degrees Celsius, the initial processing temperature for the third section is 113.2 degrees Celsius, and the initial processing temperature for the fourth section is 111.5 degrees Celsius.

[0125] In step S580, if the temperature difference corresponding to each section is less than or equal to the preset difference threshold, and the highest processing temperature corresponding to each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested has not scorched during the extrusion process.

[0126] In practice, the preset difference threshold can be 3 degrees Celsius, and the temperature difference corresponding to each section is less than 3 degrees Celsius. Moreover, the highest processing temperature corresponding to each section is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material 1 to be tested. Therefore, the semiconductive shielding material 1 to be tested did not scorch during the extrusion process.

[0127] To facilitate understanding by those skilled in the art, another type of semiconductive shielding material to be tested (characterized by semiconductive shielding material 2 to be tested) is used as an example to determine the scorching phenomenon achieved by the above method.

[0128] Step S 510 determines that the melting point of the semiconductive shielding material 2 to be tested is 102 degrees Celsius.

[0129] In step S 520, the initial processing temperature corresponding to the first section is determined to be 107 degrees Celsius, the initial processing temperature corresponding to the second section is 112 degrees Celsius, the initial processing temperature corresponding to the third section is 117 degrees Celsius, and the initial processing temperature corresponding to the fourth section is 117 degrees Celsius.

[0130] In step S530, the target screw speed corresponding to the screw extrusion equipment is determined to be 50 rpm.

[0131] In step S540, the mass of the semi-conductive shielding material 2 to be tested added to the screw extrusion equipment is determined to be 800g. After adding 800g of the semi-conductive shielding material 2 to be tested to the screw extrusion equipment, the screw extrusion equipment can continuously extrude the semi-conductive shielding material 2 to be tested according to the target screw speed and initial processing temperature.

[0132] Step S560 determines the fluctuation range of the screw torque. For ease of understanding by those skilled in the art, Figure 6 A schematic diagram (partial data) of the screw torque change in a screw extruder during the extrusion of the semiconductive shielding material 2 to be tested is provided. It can be seen that the screw torque reaches equilibrium one minute after the addition of the semiconductive shielding material 2.

[0133] Furthermore, it can be seen that during the period when the screw torque of the screw extrusion equipment remains balanced, there are cases where the fluctuation amplitude of the screw torque is greater than the preset fluctuation threshold (5 N·m). Therefore, there is no need to perform subsequent steps, and it can be directly determined that the semiconductive shielding material 2 under test has scorched during the extrusion process.

[0134] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0135] Based on the same inventive concept, this application also provides a device for identifying the scorching phenomenon of high-voltage cable semi-conductive shielding material, used to implement the above-mentioned method for identifying the scorching phenomenon of high-voltage cable semi-conductive shielding material. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the device for identifying the scorching phenomenon of high-voltage cable semi-conductive shielding material provided below can be found in the above-described limitations of the method for identifying the scorching phenomenon of high-voltage cable semi-conductive shielding material, and will not be repeated here.

[0136] In one embodiment, such as Figure 7 As shown, a device for identifying scorching phenomena in semiconductive shielding material of high-voltage cables is provided, comprising: a first temperature determination module 710, a torque determination module 720, a second temperature determination module 730, and a judgment module 740, wherein:

[0137] The first temperature determination module 710 is used to determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semi-conductive shielding material to be tested.

[0138] The torque determination module 720 is used to determine the fluctuation range of the screw torque after the screw torque of the screw extrusion equipment reaches equilibrium during the process of the screw extrusion equipment extruding the semiconductive shielding material to be tested.

[0139] The second temperature determination module 730 is used to determine the highest processing temperature of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested, when the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold.

[0140] The determination module 740 is used to determine that the semiconductive shielding material under test has not scorched during the extrusion process, provided that the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition.

[0141] In one embodiment, the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extrusion equipment; the first temperature determination module 710 is specifically used to perform a melting point test on the semiconductive shielding material to be tested using differential scanning calorimetry and thermogravimetric analysis to determine the melting point of the semiconductive shielding material to be tested; and to determine the initial processing temperature corresponding to each section based on the melting point of the semiconductive shielding material to be tested; the initial processing temperature corresponding to each section is higher than the melting point.

[0142] In one embodiment, each of the segments includes a first segment, a second segment, a third segment, and a fourth segment; the first temperature determination module 710 is specifically used to determine the sum between the melting point and the preset temperature difference to obtain the initial processing temperature corresponding to the first segment; determine the sum between the initial processing temperature corresponding to the first segment and the preset temperature difference to obtain the initial processing temperature corresponding to the second segment; determine the sum between the initial processing temperature corresponding to the second segment and the preset temperature difference to obtain the initial processing temperature corresponding to the third segment; and use the initial processing temperature corresponding to the third segment as the initial processing temperature corresponding to the fourth segment.

[0143] In one embodiment, the maximum processing temperature includes the maximum processing temperature corresponding to each of the sections; the preset difference condition includes a preset difference threshold; the determination module 740 is specifically used to determine the temperature difference between the maximum processing temperature corresponding to each of the sections and the corresponding initial processing temperature, to obtain the temperature difference corresponding to each of the sections; if the temperature difference corresponding to each of the sections is less than or equal to the preset difference threshold, and the maximum processing temperature corresponding to each of the sections is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested has not experienced scorching during the extrusion process.

[0144] In one embodiment, the device further includes: a mass determination module, configured to acquire a preset screw torque range corresponding to the screw extrusion equipment; adjust the screw speed of the screw extrusion equipment, and when the screw torque corresponding to the screw extrusion equipment is within the preset screw torque range, determine the current screw speed corresponding to the screw extrusion equipment; use the current screw speed as the target screw speed corresponding to the screw extrusion equipment; and determine the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed.

[0145] In one embodiment, the quality determination module is specifically used to control the screw extrusion device to extrude the sample semiconductive shielding material according to the target screw speed; after all the sample semiconductive shielding material in the screw extrusion device is extruded, the extrusion time of the screw extrusion device is determined; if the extrusion time meets the preset time range, the target quality is determined according to the quality of the sample semiconductive shielding material, and the quality of the semiconductive shielding material to be tested added to the screw extrusion device is obtained.

[0146] Each module in the aforementioned device for identifying the scorching phenomenon of semi-conductive shielding material in high-voltage cables can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the corresponding operations of each module.

[0147] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 8As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When executed by the processor, the computer program implements a method for identifying the scorching phenomenon of semi-conductive shielding material in high-voltage cables. The display unit is used to form a visually visible image and can be a display screen, projection device, or virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0148] Those skilled in the art will understand that Figure 8 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0149] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0150] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0151] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0152] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0153] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0154] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for identifying scorching phenomena in semiconductive shielding material of high-voltage cables, characterized in that, The method includes: Determining the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested; the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extrusion equipment; including: performing melting point testing on the semiconductive shielding material to be tested using differential scanning calorimetry and thermogravimetric analysis to determine the melting point of the semiconductive shielding material to be tested; determining the initial processing temperature corresponding to each section based on the melting point of the semiconductive shielding material to be tested; the initial processing temperature corresponding to each section is higher than the melting point; During the process of extruding the semiconductive shielding material to be tested using the screw extrusion equipment, the fluctuation range of the screw torque is determined after the screw torque corresponding to the screw extrusion equipment reaches equilibrium. When the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold, the maximum processing temperature of the screw extrusion equipment is determined during the extrusion of the semiconductive shielding material to be tested. If the temperature difference between the highest processing temperature and the initial processing temperature meets the preset difference condition, it is determined that the semiconductive shielding material under test did not scorch during the extrusion process.

2. The method according to claim 1, characterized in that, Each of the aforementioned sections includes a first section, a second section, a third section, and a fourth section; determining the initial processing temperature corresponding to each of the aforementioned sections based on the melting point of the semiconductive shielding material to be tested includes: The sum of the melting point and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the first segment; The sum of the initial processing temperature corresponding to the first section and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the second section; The sum of the initial processing temperature corresponding to the second section and the preset temperature difference is determined to obtain the initial processing temperature corresponding to the third section; The initial processing temperature corresponding to the third section is used as the initial processing temperature corresponding to the fourth section.

3. The method according to claim 1, characterized in that, The maximum processing temperature includes the maximum processing temperature corresponding to each of the aforementioned sections; the preset difference condition includes a preset difference threshold; determining that the semiconductive shielding material under test did not experience scorching during extrusion processing when the temperature difference between the maximum processing temperature and the initial processing temperature meets the preset difference condition includes: Determine the temperature difference between the highest processing temperature and the corresponding initial processing temperature for each of the aforementioned sections to obtain the temperature difference for each of the aforementioned sections. If the temperature difference corresponding to each of the aforementioned sections is less than or equal to the preset difference threshold, and the highest processing temperature corresponding to each of the aforementioned sections is less than the decomposition temperature or vulcanization temperature of the semiconductive shielding material to be tested, it is determined that the semiconductive shielding material to be tested did not experience scorching during the extrusion process.

4. The method according to claim 1, characterized in that, The method further includes: Obtain the preset screw torque range corresponding to the screw extrusion equipment; Adjust the screw speed of the screw extruder, and when the screw torque corresponding to the screw extruder is within the preset screw torque range, determine the current screw speed corresponding to the screw extruder; The current screw speed is taken as the target screw speed corresponding to the screw extrusion equipment; The mass of the semiconductive shielding material to be tested, added to the screw extrusion equipment, is determined based on the target screw speed.

5. The method according to claim 4, characterized in that, Determining the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment based on the target screw speed includes: Based on the target screw speed, the screw extrusion equipment is controlled to extrude the sample semiconductive shielding material. After all the sample semiconductive shielding material in the screw extruder is extruded, the extrusion time of the screw extruder is determined. If the extrusion time meets the preset time range, the target mass is determined based on the mass of the sample semiconductive shielding material, and the mass of the semiconductive shielding material to be tested added to the screw extrusion equipment is obtained.

6. A device for identifying scorching phenomena in semiconductive shielding material of high-voltage cables, characterized in that, The device includes: The first temperature determination module is used to determine the initial processing temperature of the screw extrusion equipment; the screw extrusion equipment is used to extrude the semiconductive shielding material to be tested; the initial processing temperature includes the initial processing temperature corresponding to each section of the screw extrusion equipment. The first temperature determination module is specifically used to perform melting point testing on the semiconductive shielding material to be tested using differential scanning calorimetry and thermogravimetric analysis to determine the melting point of the semiconductive shielding material to be tested; and to determine the initial processing temperature corresponding to each of the sections based on the melting point of the semiconductive shielding material to be tested; the initial processing temperature corresponding to each of the sections is higher than the melting point. The torque determination module is used to determine the fluctuation range of the screw torque after the screw torque of the screw extrusion equipment reaches equilibrium during the process of the screw extrusion equipment extruding the semiconductive shielding material to be tested. The second temperature determination module is used to determine the highest processing temperature of the screw extrusion equipment during the extrusion of the semiconductive shielding material to be tested, when the fluctuation amplitude of the screw torque is less than a preset fluctuation threshold. The determination module is used to determine that the semiconductive shielding material under test has not scorched during the extrusion process, provided that the temperature difference between the highest processing temperature and the initial processing temperature meets a preset difference condition.

7. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 5.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 5.

9. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 5.

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