Ion beam detection apparatus, ion beam orientation detection equipment and methods

Abstract

This invention provides an ion beam detection device, an ion beam direction detection device, and a method. The ion beam detection device uses a laser unit to emit laser light into an ion beam. A portion of the laser light passes through the ion beam without deviation, forming transmitted light. Another portion of the laser light is scattered by collisions with ions in the ion beam, forming scattered light. A second detection unit is disposed around a first detection unit, such that the transmitted light irradiates the first detection unit and the scattered light irradiates the second detection unit. By knowing the intensity of the scattered light and the intensity of the transmitted light, the beam current state of the ion beam on the wafer surface can be directly determined, improving the accuracy of process quality detection.

Description

Technical Field

[0001] This invention relates to the field of ion implantation technology, and in particular to an ion beam detection device, ion beam direction detection equipment and method. Background Technology

[0002] As an advanced doping technology, ion implantation can achieve electrical adjustment of the implantation region on a wafer, as well as alter the substrate crystal structure and assist in other processes. Currently, it is a crucial processing technology in large-scale and very large-scale integrated circuit manufacturing. The principle of an ion implanter is to ionize atoms or gas molecules into cations. After a series of screening and acceleration / deceleration processes, target ions with a certain energy are obtained. Then, through processes such as beam shape adjustment, energy contamination removal, ion parallelization, and electron neutralization, impurity ions are implanted onto the wafer.

[0003] A commonly used ion implanter has an extraction electrode shaped like a small hole, resulting in a columnar ion beam with a point-like cross-section, known as a spot beam. This type of ion implanter scans the spot beam back and forth at high speed in the horizontal direction at a certain frequency, while an electrostatic clamp holding the wafer moves the wafer to achieve ion implantation on the wafer surface.

[0004] To promptly ascertain the process quality of ion implantation on wafer surfaces, it is necessary to monitor the beam current status of the ion beam.

[0005] In the prior art, since the scanning range of the point beam is usually slightly larger than the diameter of the wafer to be implanted, the ion beam is detected by setting a detection device in the ion beam scanning range outside the wafer surface. However, this method can only know the beam state of the ion beam outside the wafer surface to indirectly know the process quality of ion implantation, and cannot directly know the beam state of the ion beam on the wafer surface, resulting in inaccurate process quality detection.

[0006] Therefore, it is necessary to develop a new type of ion beam detection device, ion beam direction detection equipment and method to improve some of the problems existing in the prior art. Summary of the Invention

[0007] The first objective of this invention is to provide an ion beam detection device, ion beam direction detection equipment and method, which can directly detect the beam current state of the ion beam on the wafer surface.

[0008] The ion beam detection device provided by the present invention includes: a carrier and at least one detection module disposed on the carrier; the carrier includes a channel extending along a first direction for the ion beam to pass through; the detection module includes a laser unit and a measurement unit; the laser unit is used to emit laser light into a columnar ion beam, the path of the laser light being perpendicular to the first direction, such that the path of the laser light covers the scanning path of the ion beam; the measurement unit includes a first detection part and a second detection part, the first detection part being located on the path of the transmitted light formed after the laser light passes through the ion beam without deviation, and is used to detect the intensity of the transmitted light; the second detection part is disposed around the first detection part and on the path of the scattered light formed by the laser light being scattered by collisions with ions in the ion beam, and is used to detect the intensity of the scattered light.

[0009] The beneficial effects of the ion beam detection device provided by the present invention are as follows: the laser unit emits the laser into the ion beam, a portion of the laser passes through the ion beam without deviation to form the transmitted light, and a portion of the laser is scattered by collisions with ions in the ion beam to form the scattered light. The second detection unit is disposed around the first detection unit, such that the transmitted light irradiates the first detection unit and the scattered light irradiates the second detection unit, thereby obtaining the intensity of the scattered light and the intensity of the transmitted light. Since the laser does not affect the ion beam implantation, the beam current state of the ion beam implanted on the wafer surface can be directly known, improving the accuracy of process quality detection.

[0010] Optionally, at least two of the detection modules are arranged along the first direction on the carrier; the laser emission directions of the at least two laser units are opposite, so that at least two laser beams with opposite directions pass through the ion beam. The beneficial effect is that when the ion beam shifts away from the measurement unit during scanning, the offset of the scattered light is large enough to exceed the detection range of the second detection unit, making it difficult for the second detection unit to accurately detect the intensity of the scattered light. By using at least two detection modules to emit at least two parallel laser beams with opposite directions to the ion beam, when the ion beam cannot detect the scattered light due to shifting away from one of the second detection units, it will move closer to the other second detection unit and accurately detect the intensity of the scattered light, thereby solving the problem that the ion beam cannot be accurately detected due to excessive shifting distance.

[0011] Optionally, the carrier is a tubular component, comprising a first tube segment and a second tube segment. One end of the first tube segment is connected to one end of the second tube segment. The first tube segment is used to connect to the ion beam generating device, and the detection module is disposed in the second tube segment. Its advantages are: laser beams are easily obstructed, causing inaccurate detection of the ion beam state. By placing the detection module in the second tube segment and using the first tube segment to separate the second tube segment from the external ion beam generating device, the entry of particles from the ion beam generating device into the second tube segment can be effectively reduced, thereby improving the detection accuracy of the ion beam state.

[0012] Optionally, the inner surface of the carrier is provided with a light-absorbing material. The beneficial effect is that when the laser light irradiates the interface of the medium, it will be scattered or reflected. Continuous scattering or reflection of the light can interfere with the light intensity detection of the measurement unit. Using the light-absorbing material absorbs the light scattered or reflected to the inner surface of the carrier, preventing further reflection and thus reducing interference with the light intensity detection of the measurement unit.

[0013] The ion beam detection method provided by this invention, using the above-mentioned ion beam detection device, includes the following steps:

[0014] A laser is emitted into an ion beam, the path of which covers the scanning path of the ion beam;

[0015] The intensity of the transmitted light formed after the laser passes through the ion beam without deflection is detected;

[0016] The intensity of the scattered light generated by the laser beam being scattered by collisions with ions in the ion beam is detected;

[0017] The beam state of the ion beam is determined based on the intensity of the transmitted light and the intensity of the scattered light.

[0018] The beneficial effects of the ion beam detection method provided by the present invention are as follows: the laser is emitted into the ion beam, a portion of the laser passes through the ion beam without being deflected to form the transmitted light, and a portion of the laser is scattered by collisions with ions in the ion beam to form the scattered light. At the same time, the intensity of the scattered light and the intensity of the transmitted light are detected, thereby directly knowing the beam current state of the ion beam on the wafer surface and improving the accuracy of process quality detection.

[0019] The second objective of this invention is to provide an ion beam direction detection device and an ion beam direction detection method, which can detect the beam direction of the ion beam.

[0020] The ion beam direction detection device provided by the present invention includes: a calculation module and the above-mentioned ion beam detection device; the ion beam detection device includes at least two detection modules; a laser unit is used to emit at least two laser beams with the same direction to the ion beam, and a second detection unit is used to detect the intensity of scattered light at at least two locations; the calculation module is connected to the second detection unit and is used to calculate the distance between the location where the laser beam is scattered and the second detection unit based on the intensity of the scattered light, so as to determine the beam direction of the ion beam.

[0021] Optionally, the ion beam detection device includes four detection modules; the laser unit is used to emit two sets of lasers in opposite directions into the ion beam, so that the two sets of lasers in opposite directions pass through the ion beam; wherein, each set of lasers has the same direction. Its advantages are: when the ion beam shifts away from the measurement unit during scanning, the offset of the scattered light is large enough to exceed the detection range of the second detection unit, making it difficult for the second detection unit to accurately detect the intensity of the scattered light; by using at least four detection modules to emit two sets of parallel lasers in opposite directions into the ion beam, wherein each set of lasers has the same direction; when the ion beam cannot detect the scattered light due to shifting away from one set of the second detection unit, it will move closer to the other set of the second detection unit and accurately detect the intensity of the scattered light, thereby solving the problem that the ion beam direction cannot be accurately detected due to excessive shifting distance.

[0022] The beneficial effect of the ion beam direction detection device provided by the present invention is that the intensity of the scattered light is affected by the distance between the ion beam and the second detection unit. By using two ion beam detection devices to emit at least two laser beams with the same direction to the ion beam, and simultaneously detecting the intensity of the scattered light generated at at least two points by the laser beam impacted by the ion beam, the distance between the ion beam and at least two points of the second detection unit can be determined. Combined with the position of the second detection unit, the beam direction of the ion beam can be determined, which is beneficial to improving the quality of ion implantation.

[0023] The ion beam orientation detection method provided by this invention, using the aforementioned ion beam orientation detection equipment, includes the following steps:

[0024] At least two laser beams with the same direction are emitted into the ion beam, the paths of which cover the scanning path of the ion beam;

[0025] The distance between the location where the laser beam is scattered and the location where the scattered light is detected is calculated based on the intensity of the scattered light, so as to determine the beam direction of the ion beam.

[0026] The beneficial effect of the ion beam direction detection method provided by the present invention is that the intensity of the scattered light is affected by the distance between the ion beam and the scattered light detection position. At least two laser beams with the same direction are emitted from the ion beam, and the intensity of the scattered light generated at at least two points where the laser beam is blocked by the ion beam is detected. Thus, the distance between the ion beam and at least two scattered light detection positions can be determined. Combined with the pre-set scattered light detection positions, the direction of the ion beam can be determined, which is beneficial to improving the quality of ion implantation. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the ion beam detection device described in an embodiment of the present invention;

[0028] Figure 2 for Figure 1 The diagram shows the ion beam detection device viewed from direction A in the figure.

[0029] Figure 3 for Figure 1 A schematic diagram of a laser-colliding ion beam is shown.

[0030] Figure 4 for Figure 1 The diagram shows the connection between the ion beam detection device and the equipment that generates the ion beam.

[0031] Figure 5 This is a schematic diagram showing the connection between the ion beam direction detection device and the ion beam generating device in an embodiment of the present invention;

[0032] Figure 6 for Figure 5 The diagram shows the principle of the ion beam direction detection device for detecting the beam direction of the ion beam.

[0033] Figure label:

[0034] 1. Carrier; 101. First tube segment; 102. Second tube segment; 2. Ion beam; 3. Laser; 301. Through light; 302. Scattered light; 4. Laser unit; 5. Measurement unit; 501. First detection unit; 502. Second detection unit; 6. Scanning electrode; 7. Correction magnetic field; 8. Wafer. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0036] To address the problems existing in the prior art, embodiments of the present invention provide an ion beam detection device, referring to... Figure 1 and Figure 2 The ion beam detection device includes a carrier 1 and a detection module disposed on the carrier 1. The carrier 1 includes a channel extending along a first direction for an ion beam 2 to pass through. The detection module includes a laser unit 4 and a measurement unit 5. The laser unit 4 emits a laser 3 towards the columnar ion beam 2, the path of which is perpendicular to the first direction, such that the path of the laser 3 covers the scanning path of the ion beam 2. The measurement unit 5 includes a first detection part 501 and a second detection part 502. The first detection part 501 is located on the path of the through light 301 formed after the laser 3 passes through the ion beam 2 without deviation, and is used to detect the intensity of the through light 301. The second detection part 502 is disposed around the first detection part 501 and on the path of the scattered light 302 formed by the scattering of the laser 3 by collisions with ions in the ion beam 2, and is used to detect the intensity of the scattered light 302.

[0037] In some embodiments of the present invention, the ion beam implants ions into the wafer with the beam current perpendicular to the wafer surface. During the ion implantation process, the ion beam is translated under the control of the scanning electrode, and the implantation point of the ion beam on the wafer moves accordingly. The trajectory of the implantation point on the wafer surface can be regarded as the scanning path. At this time, the path of the laser covering the scanning path of the ion beam means that, from the perspective of the ion beam current direction, the path of the laser coincides with the scanning path of the ion beam.

[0038] In some embodiments of the present invention, reference is made to Figure 1 and Figure 4The carrier 1 is a straight tubular part, and the interior of the carrier 1 has a channel that extends from one end of the carrier 1 to the other end. The channel extends along the first direction, i.e., direction A in the figure. The ion beam 2 passes through the channel in the carrier 1 along the first direction and then implants ions into the wafer 8.

[0039] In some specific embodiments, the cross-sectional shape of the carrier 1 can be circular or rectangular.

[0040] In some embodiments of the present invention, reference is made to Figure 1 and Figure 4 The detection module includes a laser unit 4 and a measurement unit 5. The laser unit 4 emits the laser 3, and the measurement unit 5 is positioned on the path of the laser 3. The path direction of the laser 3 between the laser unit 4 and the measurement unit 5 is perpendicular to the first direction. The path direction of the laser 3 is either direction B or the opposite direction of direction B, i.e., direction B or the opposite direction of direction B is perpendicular to direction A. During use, the laser 3 collides with the ion beam 2.

[0041] In some specific embodiments of the present invention, reference is made to Figure 1 and Figure 4 The measuring unit 5 and the laser unit 4 can be disposed on the outside of the carrier 1, and the laser 3 emitted by the laser unit 4 can pass through the carrier 1 and irradiate the ion beam 2 by making a hole in the carrier 1, thereby enabling the measuring unit 5 to detect the intensity of the through light 301 and the scattered light 302 formed after the laser 3 passes through the area where the ion beam 2 is located.

[0042] In some other embodiments of the present invention, the measuring unit 5 and the laser unit 4 may be disposed inside the carrier 1.

[0043] In some embodiments of the present invention, reference is made to Figure 2 and Figure 4 The ion beam 2 is controlled by the scanning electrode 6 and the correction magnetic field 7 of the ion implanter to generate a translational motion in the vertical direction shown in the figure. That is, the scanning path is the path between point g and point h shown in the figure. The path of the laser 3 is located between the measurement unit 5 and the laser unit 4. That is, the path of the laser 3 covers the scanning path of the ion beam 2, so that the ion beam 2 can still be irradiated by the laser 3 even if it is translated in the direction B or the opposite direction of the direction B shown in the figure.

[0044] In some embodiments of the present invention, reference is made to Figure 3The first detection unit 501 is circular, and its diameter is larger than the diameter of the light spot of the through light 301; the second detection unit 502 is annular, and the second detection unit 502 surrounds the periphery of the first detection unit 501; specifically, when the laser 3 passes through the area where the ion beam 2 is located, part of the laser 3 does not collide and does not deflect, forming the through light 301 that directly irradiates the first detection unit 501, and part of the laser 3 collides with the ions in the ion beam 2 and is scattered, forming the scattered light 302 that irradiates the second detection unit 502.

[0045] In some embodiments of the present invention, the detection range of the measuring unit 5 is adjusted according to the wavelengths of the laser 3, the transmitted light 301 and the scattered light 302.

[0046] In some embodiments of the present invention, the measuring unit may be a photosensitive sensor.

[0047] It should be noted that the components and specific measurement methods required for measuring laser intensity using the aforementioned measurement unit are common knowledge to those skilled in the art, and will not be elaborated upon here.

[0048] In some embodiments of the present invention, the beam state of the ion beam 2 includes beam current magnitude and beam current uniformity. When the beam current of the ion beam 2 is large, the intensity of the transmitted light 301 is small, and the intensity of the scattered light 302 is large. When the beam current is small, the situation of the transmitted light 301 and the scattered light 302 is reversed. When the beam current uniformity of the ion beam 2 is poor, the beam current magnitude fluctuates, and the intensity of the transmitted light 301 and the intensity of the scattered light 302 also fluctuate accordingly.

[0049] In some specific embodiments of the present invention, the ion beam detection device needs to be calibrated before use. Specifically, before ion implantation of wafer 8, the ion beam 2 is first generated, and the beam current state of the ion beam 2 is adjusted to a stable state that achieves the predetermined process. At this time, the ion beam detection device is used to detect the ion beam 2 and obtain the intensity data of the transmitted light 301 and the scattered light 302 as standard data. Subsequently, when performing ion implantation on wafer 8, the ion beam detection device is used to monitor the ion beam 2 in real time, and the real-time data is compared with the standard data to determine the beam current state of the ion beam 2 during ion implantation.

[0050] In some embodiments of the present invention, reference is made to Figure 4 At least two of the detection modules are arranged on the carrier 1 along the first direction, i.e. direction A in the figure; the laser 3 of at least two laser units 4 emits lasers in opposite directions, so that at least two lasers 3 in opposite directions pass through the ion beam 2.

[0051] In some specific embodiments, reference is made to Figure 4 When two detection modules are arranged along direction A in the figure on the carrier 1, the laser unit 4 includes the upper laser unit 4 and the lower laser unit 4 located on the carrier 1 in the figure. The measurement unit 5 includes the lower measurement unit 5 that cooperates with the upper laser unit 4 and the upper measurement unit 5 that cooperates with the lower laser unit 4. When the ion beam 2 moves away from the measurement unit 5, the position where the ion beam 2 collides with the laser 3 will be away from the measurement unit 5. Therefore, when the ion beam 2 scans to the upper end of the scanning path, the ion beam 2 is closer to the upper measurement unit 5, and the intensity of the scattered light 302 and the transmitted light 301 is obtained using the upper measurement unit 5. When the ion beam 2 moves to the lower end of the scanning path, the ion beam 2 is closer to the lower measurement unit 5, and the intensity of the scattered light 302 and the transmitted light 301 is obtained using the lower measurement unit 5.

[0052] In some embodiments of the present invention, reference is made to Figure 1 and Figure 4 The carrier 1 is a tubular part, and the carrier 1 includes a first tube segment 101 and a second tube segment 102. One end of the first tube segment 101 is connected to one end of the second tube segment 102. The first tube segment 101 is used to connect to the device that generates the ion beam, and the detection module is disposed in the second tube segment 102.

[0053] In some specific embodiments, reference is made to Figure 1 and Figure 4 The first pipe section 101 bends when transitioning to the second pipe section 102.

[0054] In some embodiments of the present invention, the inner surface of the carrier 1 is provided with a light-absorbing material.

[0055] In some specific embodiments, a nano-light-absorbing coating is applied to the inner surface of the carrier 1.

[0056] This invention provides an ion beam detection method, referring to... Figure 1 and Figure 2 Using the above-mentioned ion beam detection device includes the following steps:

[0057] S01: Emit laser 3 to ion beam 2, wherein the path of laser 3 covers the scanning path of ion beam 2;

[0058] S02: Detect the intensity of the light 301 formed by the laser 3 passing through the ion beam 2 without being deflected;

[0059] S03: Detect the intensity of the scattered light 302 formed by the scattering of the laser 3 by the collision of ions in the ion beam 2;

[0060] S04: Determine the beam state of the ion beam 2 based on the intensity of the transmitted light 301 and the intensity of the scattered light 302.

[0061] In some embodiments of the present invention, the order of steps S02 and S03 is not limited.

[0062] It should be noted that the steps and principles of the above-mentioned ion beam detection method correspond one-to-one with the structure of the above-mentioned ion beam detection device, and can be implemented by the above-mentioned ion beam detection device, so they will not be repeated here.

[0063] This invention provides an ion beam direction detection device, with reference to... Figure 5 and Figure 6 The system includes a calculation module (not shown in the figure) and the aforementioned ion beam detection device. The ion beam detection device includes at least two detection modules. The laser unit 4 is used to emit at least two laser beams 3 with the same direction to the ion beam 2. The second detection unit 502 is used to detect the intensity of scattered light 302 at at least two locations. The calculation module is connected to the second detection unit 502 and is used to calculate the distance between the location where the laser 3 is scattered and the second detection unit 502 based on the intensity of the scattered light 302, so as to determine the beam direction of the ion beam 2.

[0064] In some embodiments of the present invention, reference is made to Figure 5 and Figure 6 The ion beam direction detection device includes two detection modules. Two laser units 4 emit two parallel laser beams 3 with the same direction towards the ion beam 2. Two second detection units 502 detect the intensity of the scattered light 302 at two locations, respectively obtaining a first distance L1 and a second distance L2. Based on the first distance L1, the second distance L2, and the positions of the two second detection units 502, the i-th and j-th positions on the beam of the ion beam 2 are calculated, thereby determining the beam direction of the ion beam 2. The beam direction of the ion beam 2 needs to be adjusted to obtain a better ion implantation effect.

[0065] In some embodiments of the present invention, reference is made to Figure 5 and Figure 6The ion beam orientation detection device includes four detection modules and emits two sets of lasers 3 in opposite directions to the ion beam 2 through four laser units 4. The lasers 3 in each set have the same direction, so that when the ion beam 2 moves away from the second detection unit 502 on the upper side of the carrier 1, the scattered light 302 can be detected by the second detection unit 502 on the lower side of the diagram.

[0066] This invention provides a method for detecting the direction of an ion beam, referring to... Figure 5 and Figure 6 Using the aforementioned ion beam orientation detection equipment, the following steps are included:

[0067] S11: At least two laser beams 3 with the same direction are emitted into the ion beam 2, the paths of the laser beams 3 covering the scanning path of the ion beam 2;

[0068] S12: Calculate the distance between the position where the laser 3 is scattered and the detection position of the scattered light 302 based on the intensity of the scattered light 302, so as to determine the beam direction of the ion beam 2.

[0069] In some embodiments of the present invention, the detection position of the scattered light 302 is the position of the second detection unit 502.

[0070] In some embodiments of the present invention, the beam direction of the ion beam can be determined by calculating the distance between the two locations where the laser scatters on the ion beam and the corresponding two second detection units.

[0071] It should be noted that the steps and principles of the above-mentioned ion beam orientation detection method correspond one-to-one with the structure of the above-mentioned ion beam orientation detection device, and can be realized by the above-mentioned ion beam orientation detection device, so they will not be repeated here.

[0072] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An ion beam detection device, characterized in that, include: A carrier and at least one detection module disposed on the carrier; The carrier includes a channel extending along a first direction for the passage of an ion beam; The detection module includes a laser unit and a measurement unit; The laser unit is used to emit laser light into a columnar ion beam, the path of which is perpendicular to the first direction, so that the path of the laser light covers the scanning path of the ion beam. The measurement unit includes a first detection unit and a second detection unit. The first detection unit is located on the path of the transmitted light formed after the laser passes through the ion beam without deflection, and is used to detect the intensity of the transmitted light; The second detection unit is disposed around the first detection unit and located on the path of the scattered light formed by the laser being scattered by the collision of ions in the ion beam, and is used to detect the intensity of the scattered light; The ion beam detection device is used to determine the beam state of the ion beam based on the intensity of the transmitted light and the intensity of the scattered light. When the beam current of the ion beam is large, the intensity of the transmitted light is small, and the intensity of the scattered light is large; When the beam current is small, the behavior of the transmitted light and the scattered light is reversed.

2. The ion beam detection device according to claim 1, characterized in that, At least two of the detection modules are arranged along the first direction on the carrier; The lasers emitted by at least two of the laser units are in opposite directions, so that at least two laser beams in opposite directions pass through the ion beam.

3. The ion beam detection device according to claim 1, characterized in that, The carrier is a tubular part, which includes a first tube segment and a second tube segment. One end of the first tube segment is connected to one end of the second tube segment. The first tube segment is used to connect to the device that generates the ion beam, and the detection module is disposed in the second tube segment.

4. The ion beam detection device according to claim 3, characterized in that, The inner surface of the carrier is provided with a light-absorbing material.

5. An ion beam detection method, characterized in that, Using the ion beam detection device as described in any one of claims 1 to 4 includes the following steps: A laser is emitted into an ion beam, the path of which covers the scanning path of the ion beam; The intensity of the transmitted light formed after the laser passes through the ion beam without deflection is detected; The intensity of the scattered light generated by the laser beam being scattered by collisions with ions in the ion beam is detected; The beam state of the ion beam is determined based on the intensity of the transmitted light and the intensity of the scattered light.

6. An ion beam orientation detection device, characterized in that, include: The computing module and the ion beam detection device as described in any one of claims 1 to 4; The ion beam detection device includes at least two detection modules; The laser unit is used to emit at least two laser beams in the same direction into the ion beam, and the second detection unit is used to detect the intensity of scattered light at at least two locations; The calculation module is connected to the second detection unit and is used to calculate the distance between the location where the laser is scattered and the second detection unit based on the intensity of the scattered light, so as to determine the beam direction of the ion beam.

7. The ion beam orientation detection device according to claim 6, characterized in that, The ion beam detection device includes at least four of the detection modules; The laser unit is used to emit two sets of lasers in opposite directions into the ion beam, so that the two sets of lasers in opposite directions pass through the ion beam; wherein, each set of lasers has the same direction.

8. A method for detecting the direction of an ion beam, characterized in that, Using the ion beam orientation detection device as described in claim 6 includes the following steps: At least two laser beams with the same direction are emitted into the ion beam, the paths of which cover the scanning path of the ion beam; The distance between the location where the laser beam is scattered and the location where the scattered light is detected is calculated based on the intensity of the scattered light, so as to determine the beam direction of the ion beam.

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