A method for preparing a double channel stacked metal oxide nanofiber field effect transistor

Abstract

The application discloses a preparation method of a double-channel stacked metal oxide nanofiber field effect transistor, and comprises the following steps: S1, preparing an indium precursor solution and a zinc precursor solution respectively; S2, first spinning the indium precursor solution on the surface of a substrate to form an indium precursor fiber layer by using an electrostatic spinning technology, and then spinning the zinc precursor solution on the surface of the indium precursor fiber layer to form a zinc precursor fiber layer by using the electrostatic spinning technology, so as to obtain a double-layer precursor fiber layer covering substrate; S3, first baking the double-layer precursor fiber layer covering substrate, then performing UV light treatment, and finally performing annealing after cooling to room temperature, so as to obtain a double-layer metal oxide fiber layer covering substrate; and S4, evaporating a metal source and a drain electrode on the double-layer metal oxide fiber layer covering substrate by using a mask plate. The two kinds of fibers are stacked to form the double channel, the performance defects of a single oxide can be adjusted, the complementary advantages between the two oxides are utilized, and the performance of the device is effectively improved.

Description

Technical Field

[0001] This invention relates to the field of electronic technology, and in particular to a method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor. Background Technology

[0002] One-dimensional nanomaterials possess unique properties such as small size, high conductivity, good stability, and surface effects. In recent years, whether using carbon nanotubes as channel materials for semiconductor devices or organic materials and metal oxide nanofibers for device research and fabrication, they have demonstrated excellent performance. Metal oxide materials have outstanding advantages such as high mobility, good stability, and ease of fabrication, providing them with advantages in various fields such as sensors, energy, logic circuits, and displays. Currently, metal oxide field-effect transistors based on one-dimensional nanostructures are increasingly widely used in many functional devices, such as biosensors, chemical sensors, logic devices, and photodetectors. There are various techniques for fabricating one-dimensional nanofiber structures, including physical methods (such as laser ablation and physical vapor deposition) and chemical methods such as electrochemical etching / deposition and hydrothermal synthesis. The high manufacturing cost and complex fabrication processes in current flat panel technology remain problems that need to be solved. Developing a manufacturing process for high-performance field-effect transistors that can be produced on a large scale at low cost remains a pressing need.

[0003] Electrospinning technology has been widely used to prepare one-dimensional nanostructures of various organic and inorganic polymers and related composite materials. Furthermore, compared to other technologies, electrospinning offers advantages such as a simpler operating process, atmospheric operation, high yield, low manufacturing cost, and ease of operation. Currently, electrospinning is considered a promising future production technology, beneficial for application in emerging low-cost and disposable electronic applications. While research has reported on the fabrication of metal oxide nanofiber field-effect transistors (MENTs) using electrospinning with metal oxide nanofibers as the channel, existing reports mostly focus on single-channel devices based on a single layer of oxide nanofibers. These devices often exhibit non-uniform electrical characteristics and poor performance, limiting the application of electrospinning technology in MENT fabrication. Summary of the Invention

[0004] Based on the technical problems existing in the background technology, the present invention proposes a method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor.

[0005] The present invention proposes a method for fabricating a dual-channel stacked metal-oxide nanofiber field-effect transistor, comprising the following steps:

[0006] S1. Indium nitrate, polyvinylpyrrolidone, and solvent are mixed evenly to obtain an indium precursor solution; zinc nitrate, polyvinylpyrrolidone, and solvent are mixed evenly to obtain a zinc precursor solution.

[0007] S2. First, an indium precursor solution is spun onto the substrate surface using electrospinning technology to form an indium precursor fiber layer. Then, a zinc precursor solution is spun onto the surface of the indium precursor fiber layer using electrospinning technology to form a zinc precursor fiber layer, resulting in a double-layer precursor fiber layer covering the substrate.

[0008] S3. The double-layer precursor fiber layer covering substrate is first baked, then treated with UV light, cooled to room temperature and then annealed to obtain a double-layer metal oxide fiber layer covering substrate.

[0009] S4. Metal source electrodes and metal drain electrodes are deposited on the double-layer metal oxide fiber layer substrate by evaporation using a mask to obtain a dual-channel stacked metal oxide nanofiber field-effect transistor.

[0010] Preferably, in S1, indium nitrate, polyvinylpyrrolidone, and solvent are mixed evenly in a ratio of (0.5-0.5) g: (1.5-1.7) g: 10 mL to obtain an indium precursor solution.

[0011] Preferably, in S1, zinc nitrate, polyvinylpyrrolidone, and solvent are mixed evenly in a ratio of (0.5-0.5) g: (1.5-1.7) g: 10 mL to obtain a zinc precursor solution.

[0012] Preferably, in S1, the molecular weight of the polyvinylpyrrolidone is 300,000-1,300,000.

[0013] Preferably, in S1, the solvent is N,N-dimethylformamide.

[0014] Preferably, in step S2, the substrate is attached to the receiving substrate, and an indium precursor solution is first injected through a pump and a needle. Under a certain voltage, an indium precursor fiber layer is formed on the surface of the substrate. Then, a zinc precursor solution is injected through a pump and a needle. Under a certain voltage, a zinc precursor fiber layer is formed on the surface of the indium precursor fiber layer, resulting in a double-layer precursor fiber layer covering the substrate.

[0015] Preferably, in S2, the conditions for electrospinning are: the pump advance speed is 0.2-0.5 ml / h, the receiving distance between the needle and the receiving substrate is 10-15 cm, and the voltage is 10-20 kV.

[0016] Preferably, in S2, the spinning time of the indium precursor fiber layer is 8-25s, and the spinning time of the zinc precursor fiber layer is 6-20s.

[0017] Preferably, in step S3, the baking temperature is 100-200℃ and the baking time is 5-15 min; in step S3, the UV light treatment method is: irradiation with a high-pressure mercury lamp with a wavelength of 200-400nm and a power of 0.5-2kW for 20-40 min; in step S3, the specific steps of annealing are: first, heating to 450-550℃ at a heating rate of 5-15℃ / min, holding at that temperature for 1.5-2.5h, and then naturally cooling to room temperature.

[0018] Preferably, in step S4, the current for vapor deposition is 100A and the time is 2-4 minutes; in step S4, the aspect ratio of the electrode channel is 2-5, the thickness is 60-120 nm, and the material is aluminum.

[0019] Preferably, the substrate is a silicon oxide wafer.

[0020] Preferably, the resistivity of the silicon oxide wafer is 0.0013-0.0016 Ω‧cm, and the thickness is 100-300 nm.

[0021] Before being attached to the receiving substrate, the substrate undergoes pretreatment, including ultrasonic cleaning with anhydrous alcohol, acetone and deionized water in sequence, followed by drying with a nitrogen gun.

[0022] A dual-channel stacked metal oxide nanofiber field-effect transistor is prepared by the aforementioned method.

[0023] The beneficial effects of this invention are as follows:

[0024] This invention employs electrospinning to sequentially spin an indium oxide fiber layer and a zinc oxide fiber layer on a substrate, forming an indium oxide-zinc oxide bilayer metal oxide fiber structure. These two metal oxide fibers are stacked one on top of the other to create a dual-channel structure, which can mitigate the performance defects of a single oxide. Using highly conductive indium oxide fibers as the bottom layer and low-conductivity zinc oxide fibers as the top layer, which also serves as a regulating layer, the conductivity of the device is improved under appropriate ratios, resulting in a significant optimization of the device's threshold voltage and on / off ratio. By utilizing the complementary advantages of the two oxides, the device's performance is effectively enhanced. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the fabrication process of the dual-channel stacked metal oxide nanofiber field-effect transistor proposed in this invention.

[0026] Figure 2 The image shows the XRD pattern of the indium oxide and zinc oxide fiber layers after annealing in Example 1.

[0027] Figure 3 The image shows scanning electron microscope (SEM) images of the double-layer fiber layer before and after annealing in Example 1.

[0028] Figure 4 This is a graph showing the transfer characteristics of transistor devices with different zinc oxide fiber layer to indium oxide fiber layer density ratios in Example 1.

[0029] Figure 5 The graph shows the transfer characteristics of a transistor device with a zinc oxide fiber layer to indium oxide fiber layer density ratio of 1:2 in Example 1. Detailed Implementation

[0030] The technical solution of the present invention will now be described in detail through specific embodiments.

[0031] Example 1

[0032] Preparing the substrate:

[0033] Select a silicon oxide wafer with a resistivity of 0.0015 Ω‧cm, a thickness of 200 nm, and a length and width of 1 cm. First, ultrasonically clean the silicon wafer with anhydrous ethanol for 10 min, then ultrasonically clean it with acetone solution for 10 min, and then ultrasonically clean it with deionized water for 10 min. The cleaning is carried out at room temperature. Finally, the surface is blown clean with a nitrogen gun and dried to obtain a silicon oxide wafer substrate for later use.

[0034] Fabrication of dual-channel stacked metal-oxide nanofiber field-effect transistors:

[0035] S1. Add 0.6g of indium nitrate (In(NO3)3·xH2O) and 1.6g of polyvinylpyrrolidone with a molecular weight of 1,300,000 to 10mL of N,N-dimethylformamide, stir for 12h and let stand for 4h to obtain an indium precursor solution; add 0.6g of zinc nitrate (Zn(NO3)3·5H2O) and 1.6g of polyvinylpyrrolidone with a molecular weight of 1,300,000 to 10mL of N,N-dimethylformamide, stir for 12h and let stand for 4h to obtain a zinc precursor solution;

[0036] S2. Attach the silicon oxide substrate to the receiving substrate. Use a 10mL syringe to draw 0.2mL of indium precursor solution. Connect the needle, conduit, and connector. Set the micro-pump's injection speed to 0.4mL / h, the distance between the needle and the receiving substrate to 15cm, and the voltage to 15kV. Inject the indium precursor solution through the needle to form an indium precursor fiber layer on the surface of the silicon oxide substrate. Then, use a 10mL syringe to draw 0.2mL of zinc precursor solution. Connect the needle, conduit, and connector. Set the micro-pump's injection speed to 0.4mL / h, the distance between the needle and the receiving substrate to 15cm, and the voltage to 15kV. Inject the zinc precursor solution through the needle to form a zinc precursor fiber layer on the surface of the indium precursor fiber layer, resulting in a double-layer precursor fiber layer covering the substrate.

[0037] Specifically, by controlling the injection time of the indium precursor solution to 25s, 16s, 12s, 8s, and 0s, and correspondingly controlling the injection time of the zinc precursor solution to 0s, 6s, 10s, 15s, and 20s, a double-layer precursor fiber layer covering substrate with a density ratio of 0:1, 1:2, 1:1, 2:1, and 1:0 between the zinc precursor fiber layer and the indium precursor fiber layer was obtained.

[0038] S3. The double-layer precursor fiber layer covering substrate is first baked at 150°C for 10 min, then treated with UV light under a high-pressure mercury lamp with a wavelength of 365 nm and a power of 1 kW for 35 min. After cooling to room temperature, it is first heated to 500°C at a heating rate of 10°C / min, kept at that temperature for 2 h, and then naturally cooled to room temperature to obtain the double-layer metal oxide fiber layer covering substrate.

[0039] S4. Place the double-layer metal oxide fiber layer covering substrate on a mask template with a channel of 200µm in length and 1000µm in width, cut an appropriate amount of aluminum wire and place it on a tungsten evaporation boat, and deposit the electrode under a certain vacuum. Apply a current of 100A and continuously deposit the electrode for 3 minutes to form an electrode with a thickness of 100nm, thus obtaining a double-channel stacked metal oxide nanofiber field-effect transistor.

[0040] In particular, the final product obtained by covering the substrate with a double-layer precursor fiber layer in S2 with zinc precursor fiber layer and indium precursor fiber layer density ratios of 0:1, 1:2, 1:1, 2:1, and 1:0 is a dual-channel stacked metal oxide nanofiber field-effect transistor with zinc oxide fiber layer and indium oxide fiber layer density ratios of 0:1, 1:2, 1:1, 2:1, and 1:0, denoted as samples: zinc / indium=0:1, zinc / indium=1:2, zinc / indium=1:1, zinc / indium=2:1, and zinc / indium=1:0.

[0041] The performance of the dual-channel stacked metal-oxide nanofiber field-effect transistors prepared above was tested, and the results are as follows: Figure 1-5 As shown, Figure 1 A schematic diagram of the fabrication process for a dual-channel stacked metal oxide nanofiber field-effect transistor; Figure 2 XRD patterns of annealed indium oxide and zinc oxide fiber layers and corresponding standard spectral cards; Figure 3 These are scanning electron microscope (SEM) images of the bilayer fiber layer before and after annealing. Figure 3 The left side shows the image before annealing, and the right side shows the image after annealing. Figure 4The transfer characteristic curves of transistor devices with different zinc oxide fiber layer to indium oxide fiber layer density ratios show that as the density of the upper zinc oxide fiber layer increases, the overall trend of device performance gradually shifts from indium oxide to zinc oxide. When the zinc / indium ratio is 1:2, the device performance reaches its optimal value, which includes excellent mobility, the largest current on / off ratio, the most suitable threshold voltage, and good subthreshold swing. Figure 5 This is a graph showing the output characteristics of a transistor device with a zinc oxide fiber layer to indium oxide fiber layer density ratio of 1:2.

[0042] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor, characterized in that, Includes the following steps: S1. Indium nitrate, polyvinylpyrrolidone, and solvent are mixed evenly to obtain an indium precursor solution; zinc nitrate, polyvinylpyrrolidone, and solvent are mixed evenly to obtain a zinc precursor solution. S2. First, an indium precursor solution is spun onto the substrate surface using electrospinning technology to form an indium precursor fiber layer. Then, a zinc precursor solution is spun onto the surface of the indium precursor fiber layer using electrospinning technology to form a zinc precursor fiber layer, resulting in a double-layer precursor fiber layer covering the substrate. S3. The double-layer precursor fiber layer covering substrate is first baked, then treated with UV light, cooled to room temperature and then annealed to obtain a double-layer metal oxide fiber layer covering substrate. S4. Metal source electrodes and metal drain electrodes are deposited on the double-layer metal oxide fiber layer substrate by evaporation using a mask to obtain a dual-channel stacked metal oxide nanofiber field-effect transistor.

2. The method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor according to claim 1, characterized in that, In S1, indium nitrate, polyvinylpyrrolidone, and solvent are mixed evenly in a ratio of (0.5-0.5) g: (1.5-1.7) g: 10 mL to obtain an indium precursor solution; in S1, zinc nitrate, polyvinylpyrrolidone, and solvent are mixed evenly in a ratio of (0.5-0.5) g: (1.5-1.7) g: 10 mL to obtain a zinc precursor solution; in S1, the molecular weight of polyvinylpyrrolidone is 300,000-1,300,000.

3. The method for fabricating a dual-channel stacked metal-oxide nanofiber field-effect transistor according to claim 1, characterized in that, In step S2, the substrate is attached to the receiving substrate. First, an indium precursor solution is injected through a pump and a needle. Under a certain voltage, an indium precursor fiber layer is formed on the surface of the substrate. Then, a zinc precursor solution is injected through a pump and a needle. Under a certain voltage, a zinc precursor fiber layer is formed on the surface of the indium precursor fiber layer, resulting in a double-layer precursor fiber layer covering the substrate.

4. The method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor according to claim 1, characterized in that, In S2, the conditions for electrospinning are: the pump advance speed is 0.2-0.5 ml / h, the receiving distance between the needle and the receiving substrate is 10-15 cm, and the voltage is 10-20 kV.

5. The method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor according to claim 1, characterized in that, In S2, the spinning time of the indium precursor fiber layer is 8-25s, and the spinning time of the zinc precursor fiber layer is 6-20s.

6. The method for fabricating a dual-channel stacked metal-oxide-semiconductor nanofiber field-effect transistor according to claim 1, characterized in that, In S3, the baking temperature is 100-200℃ and the baking time is 5-15 min; in S3, the UV light treatment method is: irradiate with a high-pressure mercury lamp with a wavelength of 200-400nm and a power of 0.5-2kW for 20-40 min; in S3, the specific steps of annealing are: first heat up to 450-550℃ at a heating rate of 5-15℃ / min, hold at that temperature for 1.5-2.5h, and then cool naturally to room temperature.

7. The method for fabricating a dual-channel stacked metal-oxide-semiconductor nanofiber field-effect transistor according to claim 1, characterized in that, In S4, the current for vapor deposition is 100A and the time is 2-4min; in S4, the aspect ratio of the channel of the electrode is 2-5, the thickness is 60-120nm, and the material is aluminum.

8. The method for fabricating a dual-channel stacked metal oxide nanofiber field-effect transistor according to claim 1, characterized in that, The substrate is a silicon oxide wafer.

9. The method for fabricating a dual-channel stacked metal-oxide nanofiber field-effect transistor according to claim 8, characterized in that, The resistivity of the silicon oxide wafer is 0.0013-0.0016 Ω‧cm, and the thickness is 100-300 nm.

10. A dual-channel stacked metal-oxide nanofiber field-effect transistor, characterized in that, It is prepared by the preparation method according to any one of claims 1-9.

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