Substrate processing apparatus

Abstract

The present application relates to a substrate processing device, more particularly to a substrate processing device for performing substrate processing by high pressure and low pressure. The present application discloses a substrate processing device, comprising: a process chamber (100) forming an internal space (S1); a substrate support part (200) on which a substrate (1) is placed; an inner cover part (300) movably arranged in the internal space (S1) and abutting against a bottom surface (120) of the process chamber (100) by descending, thereby forming a sealed processing space (S2) having the substrate support part (200) inside; a gas supply part (400) for supplying process gas to the processing space (S2); and an inner cover driving part (600) for driving the up-and-down movement of the inner cover part (300).

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing by means of high voltage and low voltage. Background Technology

[0002] A substrate processing apparatus is used to perform processing on substrates such as wafers, typically including etching, deposition, and heat treatment.

[0003] At this point, when a thin film is formed by deposition on a substrate, a process is required to remove impurities from the film and improve the film properties after the film is formed on the substrate.

[0004] In particular, with the advent of three-dimensional semiconductor devices, i.e. substrates with high aspect ratios, in order to meet the stepped coverage standard, the film deposition temperature is lowered or gases with high impurity content are necessarily used, thus making impurity removal more difficult.

[0005] Therefore, a substrate processing method and a substrate processing apparatus for performing the method are required, in which, after a film is formed on a substrate, the film properties can be improved by removing impurities present in the film without deterioration of the film properties.

[0006] In addition to the thin film on the substrate, there is also the problem of contamination of the deposited thin film due to trace impurities remaining inside the cavity. Therefore, it is necessary to remove impurities from the cavity of the substrate support portion, including the supporting substrate.

[0007] To address this issue, existing Korean patent application No. 10-2021-0045294A discloses a substrate processing method that repeatedly generates high-pressure and low-pressure environments to reduce defects on the substrate surface and inside the cavity, thereby improving thin film properties.

[0008] However, when the above-described substrate processing method is applied to existing substrate processing apparatuses, the processing space for processing the substrate is relatively large, thus making it impossible to achieve a fast pressure change rate.

[0009] In addition, existing substrate processing devices have the problem of being unable to repeatedly perform processes with a wide pressure range, from low pressure of 0.01 Torr to high pressure of 5 Bar, within a short period of time.

[0010] In addition, existing substrate processing devices have the following problems: when performing high-pressure substrate processing, the gate valve of the sealed processing space cannot withstand the pressure, making it difficult to perform high-pressure substrate processing, and the durability of the gate valve cannot be guaranteed.

[0011] However, when this process is performed using existing substrate processing equipment, the temperature changes drastically as the pressure in the processing space of the substrate changes. Since this temperature change cannot be actively controlled, there is a problem of reduced substrate processing quality.

[0012] More specifically, the following problems exist: when heating the substrate through the substrate support portion of the substrate support, the heat transfer efficiency is reduced due to the indirect contact between the processing surface of the substrate and the heater; heat loss occurs due to the proximity between the substrate support portion and the lower surface of the process chamber; and the substrate temperature cannot be controlled in response to the rapid temperature changes caused by the characteristics of the heater provided in the substrate support portion.

[0013] To improve this problem, existing substrate processing devices have minimized the processing space volume. However, because minimizing the processing space volume leads to a shorter distance between the substrate and the gas jetting section of the process gas, there is a problem that the gas jetting section has a very large impact.

[0014] In particular, the inability to uniformly supply gas to the substrate through the gas jet section leads to localized temperature drops on the substrate, changes in the processing rate, and ultimately a reduction in the uniformity of substrate processing. Summary of the Invention

[0015] (The problem to be solved)

[0016] In order to solve the problems mentioned above, the object of the present invention is to provide a substrate processing apparatus that minimizes the volume of the processing space and can improve the pressure switching speed over a wide pressure range.

[0017] In addition, in order to solve the problems mentioned above, the object of the present invention is to provide a substrate processing apparatus that can easily control the substrate temperature and can uniformly supply gas to the substrate.

[0018] (Solutions)

[0019] This invention is proposed to achieve the objectives of the invention as described above. The invention discloses a substrate processing apparatus, comprising: a process chamber 100, including a chamber body 110 and a top cover 140; the chamber body 110 is open at the top, has a mounting groove 130 formed on the center side of its bottom surface 120, and includes a gate 111 for entering and exiting a substrate 1 on one side; the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; and a substrate support 200, which is internally disposed in the mounting groove 130 of the chamber body 110. A groove 130 is provided, and a substrate 1 is placed on it; an inner cover 300 is movably disposed in the internal space S1, and by descending, a portion of it is in close contact with the bottom surface 120 adjacent to the groove 130, thereby forming a sealed processing space S2 with the substrate support 200 inside; a gas supply unit 400 is provided to communicate with the processing space S2 to supply process gas to the processing space S2; an inner cover drive unit 600 is provided through the top cover 140 to drive the inner cover 300 to move up and down.

[0020] The bottom surface 120 may be configured to be higher than the substrate 1 placed on the substrate support portion 200.

[0021] The setting groove 130 may be formed in a shape corresponding to the substrate support portion 200 provided to minimize the processing space S2.

[0022] The substrate support portion 200 includes: a substrate support plate 210 on which the substrate 1 is placed and is circular in a plane; and a substrate support column 220 that passes through the bottom of the mounting groove 130 and is connected to the substrate support plate 210. The mounting groove 130 may be formed in a shape corresponding to the substrate support plate 210 to minimize the remaining space besides the space where the substrate support plate 210 is mounted.

[0023] The substrate processing apparatus may include a sealing part 900, which may be disposed on either the bottom surface of the inner cover 300 or the bottom surface 120 at a position where the inner cover 300 is in close contact with the bottom surface 120.

[0024] The sealing portion 900 may include: a first sealing member 910 disposed along the edge of the bottom surface of the inner cover portion 300; and a second sealing member 920 disposed at a position spaced apart from the first sealing member 910 by a predetermined distance.

[0025] The substrate processing apparatus may further include a pump unit 500, which is disposed in the process chamber 100 at a position close to the inner cover 300 to draw in the sealing part 900.

[0026] The pump unit 500 can draw in the gap space S4 between the first sealing component 910 and the second sealing component 920.

[0027] The gas supply unit 400 may be disposed adjacent to the edge of the substrate support unit 200.

[0028] The processing space S2 may be formed between a portion of the bottom surface of the inner cover 300 and the upper surface connecting the gas supply section 400 and the substrate support section 200.

[0029] The gas supply unit 400 may include: a gas injection unit 430 disposed at the edge of the set groove 130 and injecting the process gas; and a gas supply channel 420 disposed through the lower surface of the process chamber 100 to supply the process gas from the outside to the gas injection unit 430.

[0030] The inner cover drive unit 600 may include: a plurality of drive rods 610, one end of which passes through the upper surface of the process chamber 100 to be coupled to the inner cover 300; and at least one drive source 620, connected to the other end of the plurality of drive rods 610, for driving the drive rods 610 in a vertical direction.

[0031] The inner cover drive unit 600 may further include a bellows 630, which is disposed between the upper surface of the process chamber 100 and the inner cover 300 to enclose the drive rod 610.

[0032] The gas supply unit 400 may include: a gas injection unit 430 forming a first diffusion space S5 for diffusing the process gas; and a plurality of gas injection holes 440 formed in the gas injection unit 430 to inject the process gas toward the processing space S2.

[0033] The gas injection section 430 can be configured in a ring shape to be disposed along the edge of the substrate support section 200.

[0034] The process chamber 100 includes a gas supply channel 190, which extends through the lower surface of the process chamber 100 to communicate with the first diffusion space S5 and to transfer the process gas from the outside into the first diffusion space S5. A first diffusion groove 431 may be formed on the bottom surface of the gas injection section 430, which communicates with the gas supply channel 190 and serves the first diffusion space S5.

[0035] The gas injection section 430 forms the first diffusion space S5 inside and may include a through port 432. The through port 432 is formed in the bottom surface of the gas injection section 430 at a position corresponding to the gas supply channel 190 to receive the supply of process gas from the gas supply channel 190.

[0036] The gas injection hole 440 may be formed on the gas injection section 430.

[0037] The gas injection hole 440 gradually decreases in size as it approaches the gas supply channel 190.

[0038] The spacing between adjacent gas injection holes 440 can be gradually increased as they approach the gas supply channel 190.

[0039] The gas injection holes 440 are symmetrically arranged on the plane with reference to the center of the substrate support portion 200.

[0040] The gas jet section 430 can be formed at an angle, becoming higher towards the edge.

[0041] The substrate processing apparatus may further include a gas diffusion section 1000, which is disposed between the gas supply section 400 and the process chamber 100 and forms a second diffusion space S6 to diffuse the process gas delivered to the gas supply section 400.

[0042] The bottom surface of the gas diffusion section 1000 may form a second diffusion groove 1010 to form the second diffusion space S6 together with the process chamber 100.

[0043] The gas supply unit 400 may further include a first fastening component 450, which passes through the gas injection unit 430 and is coupled to the gas diffusion unit 1000.

[0044] The process chamber 100 may include a first stepped portion 191, which forms a step to insert a portion of the gas diffuser 1000 or to insert a portion of the gas supply channel 190 into the second diffuser groove 1010.

[0045] The gas injection section 430 is disposed on the gas diffusion section 1000 to form the first diffusion space S5 together with the gas diffusion section 1000. The gas diffusion section 1000 may include at least one gas delivery hole 1020, which is formed on the gas diffusion section 1000 to deliver the process gas from the second diffusion space S6 to the first diffusion space S5.

[0046] The gas diffusion section 1000 may include a second stepped section 1030, which is formed on the gas diffusion section 1000 and a portion of the second stepped section 1030 is inserted into the first diffusion groove 431.

[0047] Multiple gas delivery holes 1020 can be configured, and the multiple gas delivery holes 1020 can be symmetrically arranged on the plane with reference to the center of the substrate support portion 200.

[0048] Multiple gas diffusers 1000 may be stacked on top of each other in the process chamber 100 and the gas injection section 430.

[0049] The substrate processing apparatus may further include a temperature regulating unit 1100, which is disposed in the inner cover 300 to regulate the temperature of the substrate 1 located in the processing space S2.

[0050] The substrate support 200 may include: a substrate support plate 210 on which the substrate 1 is placed; a substrate support column 220 that passes through the bottom of the setting groove 130 to be connected to the substrate support plate 210; and an internal heater 230 disposed inside the substrate support plate 210.

[0051] The temperature regulating part 1100 may include: a temperature regulating plate 1110 disposed in the inner cover 300 to heat or cool the substrate 1; and a rod 1120 that passes through the top cover 140 and is attached to the temperature regulating plate 1110.

[0052] The temperature regulating plate 1110 may be disposed in the through opening 320, which is formed on the center side of the inner cover portion 300 corresponding to the substrate 1.

[0053] The temperature regulating part 1100 may further include a buffer plate 1130, which covers the through opening 320 on the lower side of the inner cover part 300.

[0054] The temperature regulating plate 1110 may include at least two temperature regulating areas, which are distinct from each other on a plane and can adjust their temperatures independently.

[0055] The substrate processing apparatus may further include a control unit that controls the heating or cooling of the temperature regulating unit 1100. The control unit can control the temperature regulating unit 1100 to maintain a constant temperature for the substrate 1 or the processing space S2 during the pressure transformation process of the processing space S2.

[0056] The temperature regulating unit 1100 may further include a cover plate 1140, which is configured to cover the through opening 320 on the upper side of the inner cover 300.

[0057] The temperature regulating plate 1110 can be disposed in the bottom surface of the inner cover 300 at a position facing the base plate 1.

[0058] The temperature regulating unit 1100 may be a halogen lamp or an LED heater for heating the substrate 1.

[0059] The temperature regulating plate 1110 can be inserted into the insertion slot 330, which is formed on the center side of the upper surface of the inner cover portion 300 corresponding to the substrate 1.

[0060] The temperature regulation area may include: a first temperature regulation area 1111, which shares a center with the temperature regulation plate 1110, which is formed as a circle on a plane, and is divided into a circle on a plane at a position corresponding to the center side of the substrate 1; a third temperature regulation area 1113, which is divided at the edge of the temperature regulation plate 1110; and a second temperature regulation area 1112, which is divided between the first temperature regulation area 1111 and the third temperature regulation area 1113.

[0061] The substrate processing apparatus may further include a control unit that controls the heating or cooling of the temperature regulation unit 1100. The control unit may control the temperature of the third temperature regulation region 1113 to be higher than that of the first temperature regulation region 1111.

[0062] Furthermore, this invention discloses a substrate processing method, which is a substrate processing apparatus comprising: a process chamber 100 forming an internal space and a gate 111 formed on one side; a substrate support 200 on which a substrate 1 is placed; and an inner cover 300 facing the substrate support 200 and movably disposed in the internal space. The substrate processing method includes: a substrate introduction step S100, in which the substrate 1 is introduced into the internal space through the gate 111 by a transfer robot disposed externally, and placed in the substrate support 200; a processing space forming step S200, in which, while the substrate 1 is placed in the substrate support 200 via the substrate introduction step S100, the inner cover 300 is lowered, and a portion of the inner cover 300 is brought into close contact with the bottom surface 120 of the process chamber 100, thereby dividing the internal space into a sealed processing space S2 and a non-processing space S3; and a substrate processing step S300, in which substrate processing is performed on the substrate 1 disposed in the processing space S2.

[0063] After the substrate processing is performed through the substrate processing step S300, the following steps may be included: a processing space release step S400, in which the inner cover 300 is raised to release the sealed processing space S2; and a substrate export step S500, in which the substrate 1, after substrate processing, is exported from the internal space to the outside through the gate 111 by a transport robot configured on the outside.

[0064] The substrate import step S100, the processing space formation step S200, the substrate processing step S300, the processing space release step S400, and the substrate export step S500 can be executed repeatedly in sequence.

[0065] Before the substrate 1 is introduced into the internal space through the substrate introduction step S100, a cleaning step may be included. In the cleaning step, gas is supplied through the processing space S2 side while the inner cover 300 is raised, and gas is discharged through the non-processing space S3 side.

[0066] The substrate processing step S300 may include: a pressure boosting step S310, which raises the pressure of the processing space S2 to a first pressure higher than the normal pressure; and a pressure depressurization step S320, which lowers the pressure of the processing space S2 from the first pressure to a second pressure.

[0067] The second pressure can be a pressure lower than atmospheric pressure.

[0068] The pressure reduction step S320 may include: a first pressure reduction step S321, reducing the pressure of the processing space S2 from the first pressure to atmospheric pressure; and a second pressure reduction step S322, reducing the pressure of the processing space S2 from atmospheric pressure to a second pressure lower than atmospheric pressure.

[0069] The substrate processing step S300 can maintain the non-processing space S3 at a constant pressure, which is a vacuum pressure lower than atmospheric pressure.

[0070] The processing space release step S400 may include: a pressure adjustment step S410, adjusting the pressure of at least one of the non-processing space S3 and the processing space S2 to adjust the pressure difference between the non-processing space S3 and the processing space S2 within a preset range; and an inner cover lifting step S420, lifting the inner cover portion 300 to release the processing space S2.

[0071] The pressure regulation step S410 adjusts the pressure of the non-processing space S3 and the processing space S2 so that they have the same pressure.

[0072] The process chamber 100 also includes a gate valve 150 for opening and closing the gate 111. A gate closing step may be included after the process space formation step S200, wherein the gate closing step is to close the gate 111 by means of the gate valve 150.

[0073] (The effect of the invention)

[0074] The substrate processing apparatus of the present invention minimizes the volume of the processing space of the processing substrate inside the chamber, thereby having the advantage of improving the pressure switching speed over a wide pressure range.

[0075] In particular, the substrate processing apparatus of the present invention minimizes the volume of the processing space for processing the substrate, thereby having the advantage of being able to change the pressure at a high pressure change rate of 1 Bar / s from a low pressure of 0.01 Torr to a high pressure of 5 Bar.

[0076] In particular, the substrate processing apparatus of the present invention has the advantage of being able to easily import and export substrates while minimizing the volume of the processing space for processing substrates.

[0077] Furthermore, the substrate processing apparatus of the present invention has the advantage of excellent durability because it prevents foreign matter such as gas from leaking from the minimized processing space by providing a sealing part, and at the same time prevents corrosion and damage to the sealing part by purging the sealing part.

[0078] Furthermore, the substrate processing apparatus of the present invention effectively removes foreign matter and impurities from the substrate through rapid pressure changes, thus having the advantage of increasing the substrate processing speed.

[0079] Furthermore, the substrate processing apparatus of the present invention can perform substrate processing by means of a high-pressure process, regardless of the gate valve, by forming a sealed processing space through the lowering and close contact of the inner cover to perform substrate processing. Therefore, it has the advantage of being able to easily perform high-pressure process substrate processing regardless of the performance of the gate valve, and preventing damage to the gate valve.

[0080] Furthermore, the substrate processing apparatus of the present invention has the advantage of improving safety by preventing leakage to the outside of the apparatus when a substrate is processed by a high-pressure process and leakage occurs in the processing space, by performing suction in the internal space which is formed as a dual space.

[0081] Furthermore, the substrate processing apparatus of the present invention minimizes the volume of the processing space for processing the substrate, and has the advantage of increasing the pressure change speed over a wide pressure range, thereby enabling precise temperature control corresponding to the temperature changes of the substrate caused thereby.

[0082] In particular, the substrate processing apparatus of the present invention can adjust the temperature of the substrate to maintain a constant temperature even under factors that cause temperature changes due to rapid pressure changes, thereby improving the process effect and enabling the formation of thin films with uniform quality.

[0083] Furthermore, the substrate processing apparatus of the present invention performs heating or cooling directly on the substrate processing surface, i.e., the upper side, and has the advantage of being able to quickly and accurately control the substrate temperature by means of rapid temperature compensation.

[0084] Furthermore, the substrate processing apparatus of the present invention improves the local temperature and processing deviation of the substrate by uniformly spraying gas through a gas jet section arranged adjacent to the substrate in a minimized processing space, thus having the advantage of uniformly processing the substrate. Attached Figure Description

[0085] Figure 1 This is a cross-sectional view showing the substrate processing apparatus of the present invention.

[0086] Figure 2 It is shown Figure 1 A cross-sectional view of the processing space of the substrate processing apparatus.

[0087] Figure 3 It is shown Figure 1 An enlarged view of part A of the O-ring.

[0088] Figure 4 It is shown in the use of Figure 1 A graph showing the pressure changes that occur during the process of the substrate processing apparatus.

[0089] Figure 5 This is a cross-sectional view showing another embodiment of the substrate processing apparatus of the present invention.

[0090] Figure 6 It is shown Figure 5 A cross-sectional view of the temperature control unit in the substrate processing apparatus.

[0091] Figure 7 It is shown Figure 5 A cross-sectional view of another embodiment of the temperature regulation unit in the substrate processing apparatus.

[0092] Figure 8 It is shown in Figure 5 A bottom view of the temperature regulation area distinguished by the temperature regulation unit in the substrate processing apparatus.

[0093] Figure 9 It shows through Figure 5 The graph shows the pressure changes that occur in the processing space and non-processing space of the substrate processing device.

[0094] Figure 10This is a cross-sectional view showing another embodiment of the substrate processing apparatus of the present invention.

[0095] Figure 11 It is shown in Figure 10 An exploded perspective view of the gas supply section and gas diffusion section in a substrate processing apparatus.

[0096] Figure 12 It is shown in Figure 10 An exploded perspective view of the bottom surface of the gas supply section and gas diffusion section in the substrate processing apparatus, viewed from below.

[0097] Figure 13 It is shown in Figure 10 An enlarged cross-sectional view of the gas supply section and gas diffusion section in the substrate processing apparatus.

[0098] Figure 14 It is shown in Figure 10 An enlarged cross-sectional view of the gas supply section and gas diffusion section in another embodiment of the substrate processing apparatus.

[0099] Figure 15 It is shown in Figure 10 An enlarged cross-sectional view of the gas supply section and gas diffusion section in another embodiment of the substrate processing apparatus.

[0100] Figure 16 A cross-sectional view showing another embodiment of the substrate processing apparatus of the present invention is shown.

[0101] Figure 17 This is a flowchart illustrating a substrate processing method using the substrate processing apparatus of the present invention.

[0102] Figure 18 It is shown in Figure 17 A flowchart of the substrate processing steps in the substrate processing method.

[0103] Figure 19 It is shown in Figure 17 The flowchart shows the process space removal step in the substrate processing method.

[0104] (Explanation of reference numerals in the attached diagram)

[0105] 100: Process chamber; 200: Substrate support section

[0106] 300: Inner cover section; 400: Gas supply section

[0107] 500: Pump section; 600: Inner cover drive section

[0108] 700: Filler component; 800: Substrate support pin.

[0109] 900: Sealing section; 1000: Gas diffusion section

[0110] 1100: Temperature regulation unit; 1200: First pressure regulation unit

[0111] 1300: Second pressure regulating section Detailed Implementation

[0112] The substrate processing apparatus of the present invention will now be described with reference to the accompanying drawings.

[0113] like Figure 1 As shown, the substrate processing apparatus of the present invention includes: a process chamber 100, comprising a chamber body 110 and a top cover 140, wherein the upper part of the chamber body 110 is open and a mounting groove 130 is formed on the center side of the bottom surface 120, and a gate 111 for entering and exiting the substrate 1 is included on one side; the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; and a substrate support 200 is inserted into the mounting groove 130 of the chamber body 110, and a substrate is placed on it. A substrate 1 is placed; an inner cover 300 is movably disposed in the internal space S1, and by descending, a portion of it is in close contact with the bottom surface 120 adjacent to the mounting groove 130, thereby forming a sealed processing space S2 with the substrate support 200 inside; a gas supply unit 400 is disposed in communication with the processing space S2 to supply process gas to the processing space S2; and an inner cover driving unit 600 is disposed through the top cover 140 to drive the inner cover 300 to move up and down.

[0114] In addition, the substrate processing apparatus of the present invention may also include a pump unit 500, which is disposed in the process chamber 100 at a position close to the inner cover 300 to draw in gas leaking from the sealing part 900.

[0115] Additionally, the substrate processing apparatus of the present invention may include a filling member 700 disposed between the substrate support portion 200 and the inner surface of the setting groove 130 to fill at least a portion of the space between the substrate support portion 200 and the inner surface of the setting groove 130.

[0116] In addition, the substrate processing apparatus of the present invention may also include a substrate support pin 800, which supports the substrate 1 introduced and exported in the process chamber 100 and is mounted on the substrate support 200.

[0117] In addition, the substrate processing apparatus of the present invention includes a temperature adjustment unit 1100, which is provided in the inner cover 300 to adjust the temperature of the substrate 1 located in the processing space S2.

[0118] Here, substrate 1, which is the object of processing, can be understood to include all substrates, such as substrates used in display devices such as LCD, LED, and OLED, semiconductor substrates, solar cell substrates, and glass substrates.

[0119] The process chamber 100, which forms an internal space S1, can adopt various structures.

[0120] For example, the process chamber 100 may include a chamber body 110 and a top cover 140, the upper part of the chamber body 110 being open, and the top cover 140 covering the open upper part of the chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0121] Additionally, the process chamber 100 may include a bottom surface 120 and a mounting groove 130. The bottom surface forms the bottom of the internal space S1, and the mounting groove 130 allows the substrate support portion 200 to be disposed on the bottom surface 120.

[0122] In addition, the process chamber 100 may also include a gate valve 150, which is used to open and close a gate 111 formed on one side of the chamber body 110 to allow the substrate 1 to enter and exit.

[0123] Additionally, the process chamber 100 may also include a support pin setting groove 160, which is formed on the lower surface of the process chamber 100 to provide a substrate support ring 820 in the substrate support portion 200 described later.

[0124] The main body 110 of the chamber is open at the top and can form a sealed internal space S1 together with the top cover 140 described later.

[0125] At this time, the chamber body 110 can be made of a metal material containing aluminum, or, as another example, of a quartz material, and can have a rectangular hexahedral shape, similar to the previously disclosed chambers.

[0126] On the other hand, the internal space S1 can be divided into a processing space S2 and a non-processing space S3 by the inner cover 300 described later, that is, the space other than the processing space S2.

[0127] The top cover 140 may be a structure that is attached to the upper side of the upper open chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0128] At this time, the top cover 140 corresponds to the shape of the chamber body 110, and can be formed into a right-angled quadrilateral shape on a plane, and can be made of the same material as the chamber body 110.

[0129] In addition, the top cover 140 may have multiple through holes to pass through the inner cover drive part 600 described later, and the bottom surface is connected to the end of the first bellows 630 described later, which can prevent the leakage of various gases and foreign objects to the outside.

[0130] On the other hand, the top cover 140 structure can of course be omitted, and the chamber body 110 can be formed as an integral type that forms an internal space S1 inside.

[0131] The process chamber 100 may include a bottom surface 120 and a mounting groove 130. The lower inner surface of the bottom surface 120 forms the bottom of the internal space S1, and the mounting groove 130 is configured to allow the substrate support portion 200, described later, to be disposed on the bottom surface 120.

[0132] More specifically, such as Figure 1 As shown, a mounting groove 130 can be formed on the center side of the lower surface of the process chamber 100. The mounting groove 130 forms a step corresponding to the substrate support portion 200 described later. A bottom surface 120 can be formed at the edge of the mounting groove 130.

[0133] That is, a mounting groove 130 for mounting a substrate support 200 is formed on the lower inner surface of the process chamber 100. The mounting groove 130 forms a step, and the rest is defined as the bottom surface 120, which can be formed at a height higher than the mounting groove 130.

[0134] The gate valve 150, as a structure for opening and closing a gate 111 formed on one side of the chamber body 110 to allow the substrate 1 to enter and exit, can adopt various structures.

[0135] At this time, the gate valve 150 is in close contact with or unclosed to the chamber body 110 by up-down driving and forward-backward driving, thereby closing or opening the gate 111. As another example, the gate 111 can be closed or opened by a single drive in the diagonal direction. In this process, various previously disclosed driving methods can be applied, such as cylinder, cam, electromagnetic, etc.

[0136] The support pin setting groove 160 is used to set the substrate support pin part 800 to support the substrate 1 to be placed on the substrate support part 200 or to support the substrate 1 at intervals from the substrate support part 200 upwards, thereby enabling the substrate 1 to be introduced and exported. Various structures can be adopted.

[0137] For example, the support pin setting groove 160 corresponds to a groove that can be formed as an annular groove on the plane of the substrate support ring 820, so as to set the substrate support ring 820 described later.

[0138] At this time, the support pin setting groove 160 can be set on the lower surface of the process chamber 100 corresponding to the position of the substrate support ring 820, or more specifically, it can be formed in the setting groove 130.

[0139] That is, the support pin setting groove 160 can be formed in the setting groove 130 that forms a step from the bottom surface 120, and can have a predetermined depth so that it can move up and down when the substrate support ring 820 is set.

[0140] Therefore, the support pin setting groove 160 is provided with a substrate support ring 820, and multiple substrate support pins 810 can be provided, which pass through the filling member 700 and the substrate support plate 210 on the upper side.

[0141] On the other hand, the support pin setting groove 160 is formed in the setting groove 130 and has a predetermined volume, which causes an increase in the volume of the processing space S2 formed by the inner cover portion 300 described later.

[0142] To improve this problem, the filling component 700 is provided in the setting groove 130 while covering the support pin setting groove 160, thereby isolating the processing space S2 from the space formed by the support pin setting groove 160, thereby minimizing the volume of the processing space S2.

[0143] More specifically, when the support pin setting groove 160 is removed, a separate space is needed in the lower part of the substrate support plate 210 for the substrate support pin 810 and substrate support ring 820, which will be described later. This can cause an increase in dead volume. In order to eliminate the dead volume, the support pin setting groove 160 can be formed so that the substrate support pin 810 and substrate support ring 820 can be inserted into the support pin setting groove 160 when they descend.

[0144] On the other hand, unlike this, the support pin setting groove 160 is not provided on the bottom surface 120 of the process chamber 100, but can be formed on the filling member 700 provided in the setting groove 130.

[0145] That is, the support pin setting groove 160 forms a predetermined depth on the upper surface of the filling member 700, more specifically, a depth to the extent that the substrate support ring 820 and the substrate support pin 810 can be inserted, so that the substrate 1 can be raised in order to support the substrate 1 in the state of being inserted into the filling member 700.

[0146] On the other hand, at this time, the substrate support pin 810 can pass through the filling member 700.

[0147] The substrate support 200 is a structure provided in the process chamber 100 and on which the substrate 1 is placed, and various structures can be adopted.

[0148] That is, the substrate 1 is placed on the substrate support portion 200 to support the substrate 1 being processed, and the substrate 1 can be fixed during the substrate processing.

[0149] In addition, the substrate support 200 has a heater inside, which can create a temperature environment for the processing space S2 for substrate processing.

[0150] For example, the substrate support 200 may include: a substrate support plate 210 on which the substrate 1 is placed; a substrate support column 220 that passes through the bottom of the mounting groove 130 to connect with the substrate support plate 210; and an internal heater 230 disposed inside the substrate support plate 210.

[0151] The substrate support plate 210, which serves as the structure on which the substrate 1 is placed, can be a plate structure that is formed into a circle on a plane corresponding to the shape of the substrate 1.

[0152] At this time, an internal heater 230 is arranged inside the substrate support plate 210, which can create a process temperature for substrate processing in the processing space S2. The process temperature can be about 400°C to 550°C.

[0153] The substrate support column 220 serves as a structure connecting the lower surface of the through-process chamber 100 to the substrate support plate 210, and various structures can be adopted.

[0154] The substrate support column 220 passes through the lower surface of the process chamber 100 and can be combined with the substrate support plate 210, and various wires for supplying power to the internal heater 230 can be provided inside.

[0155] The internal heater 230 can be disposed inside the substrate support plate 210 to heat the processing space S2 and the substrate 1 in order to process the structure of the substrate 1.

[0156] At this time, the internal heater 230 can also be applied to any type of heater previously disclosed. As an example, it can be a hot wire type that is disposed inside the substrate support plate 210 and heats up by power received from the outside.

[0157] On the other hand, such as Figure 4 As shown, the substrate processing apparatus of the present invention is an apparatus for performing substrate processing that repeatedly changes and creates a pressure environment of high pressure and low pressure in a short period of time. More specifically, it is necessary to repeatedly change the pressure range from 5 Bar to 0.01 Torr at a pressure change rate of 1 Bar / s.

[0158] However, considering the large volume of the internal space S1 of the chamber body 110, the pressure change speed described above cannot be achieved. Therefore, it is necessary to minimize the volume of the processing space S2 used for substrate processing.

[0159] Therefore, the substrate processing apparatus of the present invention includes an inner cover portion 300, which is movably disposed in the internal space S1 and is lowered to fit tightly against the process chamber 100 to form a sealed processing space S2 in which the substrate support portion 200 is located.

[0160] The inner cover 300 may be movably disposed in the internal space S1 and, by lowering a portion therein, closely adhere to the process chamber 100 to form a sealed processing space S2 containing the substrate support 200.

[0161] That is, the inner cover 300 is configured to move up and down on the upper side of the substrate support 200 in the internal space S1, and by descending and closely adhering to at least a portion of the internal surface of the process chamber 100, the internal space S1 can be divided into a processing space S2 sealed between the inner cover 300 and the lower inner surface of the process chamber 100 and a non-processing space S3 other than the processing space S2.

[0162] Accordingly, the substrate support 200 can be located within the processing space S2, and substrate processing can be performed on the substrate 1 placed in the substrate support 200 within the processing space S2 with minimized volume.

[0163] As an example, the inner cover 300 is pressed against the bottom surface 120 by a descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the inner lower surface of the process chamber 100.

[0164] On the other hand, as another example, the inner cover 300 is in close contact with the inner side of the process chamber 100 by its descending edge, thereby naturally forming a sealed processing space S2.

[0165] The inner cover 300 forms a sealed processing space S2 by closely abutting the bottom surface 120 with its descending edge, and the substrate support 200 provided in the setting groove 130 can be located within the processing space S2.

[0166] That is, such as Figure 2 As shown, the inner cover 300 is closely attached to the bottom surface 120, which forms a step with the setting groove 130 and is located at a high position, through the descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the setting groove 130.

[0167] At this time, a substrate support 200 is provided in the setting slot 130, and more specifically, a substrate support plate 210 and a filling member 700 are provided, thereby minimizing the volume of the processing space S2 and allowing the substrate 1, which is to be processed, to be placed on it.

[0168] In order to minimize the volume of the processing space S2 in this process, the groove 130 can be formed in a shape corresponding to the substrate support 200 of the processing space S2. More specifically, corresponding to the circular substrate support plate 210, it can be formed in a groove with a cylindrical shape.

[0169] That is, in order to minimize the remaining space in the setting space formed by the setting groove 130, except for the space for the setting substrate support plate 210 and the filling member 700, the setting groove 130 can be formed into a shape corresponding to the shape of the substrate support plate 210.

[0170] To prevent interference between the substrate 1 placed on the substrate support plate 210 and the inner cover 300 during the process, the height of the bottom surface 120 may be higher than the substrate 1 placed on the substrate support plate 200.

[0171] On the other hand, the greater the distance between the substrate 1 placed in the substrate support 200 and the bottom surface of the inner cover 300, the larger the volume of the processing space S2 will be. Therefore, the height of the bottom surface 120 can be set to minimize the distance between the substrate 1 and the inner cover 300 while preventing interference between them.

[0172] The inner cover portion 300 may include an inner cover 310, which moves up and down via an inner cover drive portion 600.

[0173] The inner cover 310, which moves up and down within the internal space via the inner cover drive unit 600, can adopt various structures.

[0174] At this time, the inner cover 310 can be formed on the plane to cover the setting groove 130 and the edge corresponds to a part of the bottom surface 120, and the edge of the inner cover 310 is in close contact with the bottom surface 120, thereby forming a sealed processing space S2 between the inner cover 310 and the setting groove 130.

[0175] On the other hand, as another example, the inner cover 310 may be positioned so that its edge is close to the inner side of the process chamber 100 to form a processing space S2.

[0176] In addition, in order to effectively achieve and maintain the process temperature within the sealed processing space S2 formed by the up-and-down movement of the inner cover 310, the inner cover 310 can be formed of a material with excellent heat insulation effect, which can prevent the processing space S2 from losing temperature to the internal space.

[0177] In addition, such as Figure 5 As shown, the inner cover 300 may be a structure in which the temperature regulating part 1100, described later, is provided.

[0178] At this time, a through opening 320 can be formed on the center side of the inner cover 300 to provide a temperature regulating part 1100 (described later), and more specifically, a temperature regulating plate 1110 and a buffer plate 1130.

[0179] More specifically, a through opening 320 is formed in the inner cover 310 at a position facing the substrate 1 and the substrate support plate 210, where a temperature regulating plate 1110 can be installed.

[0180] At this time, in order to support the temperature regulating plate 1110, a support step 340 can be formed on the upper side of the through opening 320 in the radial direction of the inner cover 310. The end of the temperature regulating plate 1110 is supported by the support step 340, so that the temperature regulating plate 1110 can be stably supported and set in the through opening 320.

[0181] On the other hand, as another example, such as Figure 5 As shown, an insertion groove 330 may be formed on the upper surface of the inner cover portion 300 so that the temperature regulating plate 1110, described later, can be inserted into the interior of the inner cover portion 300.

[0182] That is, unlike the above, such as Figure 7 As shown, an insertion groove 330 is simply formed on the upper surface of the inner cover 310, and a temperature regulating plate 1110 can be inserted into the insertion groove 330. At this time, the insertion groove 330 can be formed on the center side of the inner cover 310, that is, at the position facing the substrate 1 and the substrate support 200.

[0183] On the other hand, in this case, as described above, a support step 340 is formed on the upper side of the insertion slot 330 in the radial direction of the inner cover 310, which can naturally support the temperature regulating plate 1110 inserted into the insertion slot 330.

[0184] Furthermore, the inner cover 310 can be formed of a transparent material so that the lower part 360 of the insertion slot 330 can easily transfer heat supplied through the temperature regulating plate 1110 or heat supplied from the substrate 1 and the processing space S2 to the temperature regulating plate 1110.

[0185] That is, the inner cover 310 should perform heat exchange with the substrate 1 and the processing space S2 through the insertion groove 330 and the lower part 360. Therefore, considering that the heat supply method of the temperature regulating plate 1110 described later is an LED heater or a halogen lamp heater, a part of the lower part 360 can be made of a transparent material that is easy to conduct heat.

[0186] The sealing part 900 is a structure disposed on at least one of the bottom surface 120 of the inner cover part 300 or the process chamber 100, and can be disposed in a position corresponding to the bottom surface 120 of the process chamber 100 being in close contact with the inner cover part 300.

[0187] That is, when the edge of the inner cover 300 contacts the bottom surface 120 to form a sealed processing space S2, the sealing part 900 is arranged along the edge in the bottom surface of the inner cover 300 and can contact the area between the edge of the inner cover 300 and the bottom surface 120.

[0188] Thus, the sealing part 900 can guide the formation of a sealed processing space S2 and prevent process gases and the like from leaking from the internal space S1 and the outside.

[0189] For example, the sealing portion 900 may include: a first sealing member 910 disposed along an edge in the bottom surface of the inner cover portion 300; and a second sealing member 920 disposed at a position spaced apart from the first sealing member 910 by a predetermined distance.

[0190] At this time, the first sealing member 910 and the second sealing member 920, as O-rings of the type disclosed previously, are arranged side by side along the edge of the bottom surface of the inner cover portion 300, spaced apart by a predetermined distance.

[0191] That is, the first sealing component 910 and the second sealing component 920 perform a double seal on the processing space S2, thereby preventing process gases and the like from leaking from the processing space S2 to the outside.

[0192] On the other hand, the sealing part 900 can be inserted into the insertion groove provided on the bottom surface 120, and can be tightly attached to or separated from the inner cover part 300 as the inner cover part 300 moves up and down.

[0193] As another example, the sealing part 900 can of course also be configured on the bottom surface of the inner cover part 300.

[0194] The pump unit 500 is a structure located in the process chamber 100 in close contact with the inner cover 300 to draw in process gas leaking from the sealing part 900, and various structures can be adopted.

[0195] For example, the pump unit 500 is located at a position corresponding to the close contact position between the inner cover 300 and the process chamber 100, and penetrates the lower surface of the process chamber 100, thereby enabling suction of the sealing part 900 provided in the inner cover 300.

[0196] That is, the pump section 500 minimizes the leakage of process gas from the sealing section 900, which is a consumable, thereby minimizing corrosion and damage to the sealing section 900 exposed to the high temperature and process gas in the processing space S2, and thus improving durability.

[0197] Therefore, the pump unit 500 can draw air from the gap space S4 between the first sealing member 910 and the second sealing member 920.

[0198] For example, the pump unit 500 may include: a pump 530 configured externally to perform suction on the gap space S4; a pumping nozzle 510 disposed at a position corresponding to the second sealing member 920; and a pumping flow path 520 configured to penetrate the lower surface of the process chamber 100 such that one end is connected to the pumping nozzle 510 and the other end is connected to the external pump 530.

[0199] At this time, the pumping nozzle 510 may be formed in a circular shape on the plane along the sealing portion 900. As another example, it may be a structure in which a portion of a groove formed on the lower surface of the process chamber 100 is arranged along the sealing portion 900 to perform suction along the groove.

[0200] On the other hand, the pumping flow path 520 may be a separate pipe structure that passes through the lower surface of the process chamber 100. As another example, it may be formed by machining the lower surface of the process chamber 100.

[0201] On the other hand, unlike the above example of pumping process gas leaking in the sealing part 900, the pump part 500 may be a structure that supplies purging gas to the gap space S4 between the first sealing member 910 and the second sealing member 920.

[0202] The gas supply unit 400 can be configured to communicate with the processing space S2 to supply process gas to the processing space S2, and various structures can be adopted.

[0203] For example, such as Figure 1 As shown, the gas supply unit 400 may include: a gas supply nozzle 410 exposed in the processing space S2 to supply process gas into the processing space S2; and a gas supply channel 420 penetrating the process chamber 100, connected to the gas supply nozzle 410, and transmitting the process gas supplied through the gas supply nozzle 410.

[0204] At this time, as Figure 2 As shown, the gas supply unit 400 can be disposed adjacent to the substrate support unit 200 at the edge of the mounting groove 130, thereby supplying process gas to the processing space S2.

[0205] On the other hand, the processing space S2 can be formed between a portion of the bottom surface of the inner cover 300 and the upper surface of the gas supply section 400 and the substrate support section 200.

[0206] The gas supply nozzle 410, as a structure exposed in the processing space S2 to supply process gas into the processing space S2, can adopt various structures.

[0207] For example, the gas supply nozzle 410 is disposed adjacent to the side of the substrate support plate 210 at the edge of the setting groove 130, and sprays process gas upward or onto the side of the substrate support plate 210, thereby supplying process gas into the processing space S2.

[0208] At this time, the gas supply nozzle 410 is disposed at the edge of the setting groove 130, surrounding the substrate support plate 210, and can spray process gas from at least a portion of the side surface of the substrate support plate 210 on the plane.

[0209] As an example, the gas supply nozzle 410 can spray process gas from the edge of the setting groove 130 toward the bottom surface of the inner cover 300, and can supply process gas in order to adjust the pressure of the processing space S2 to the desired pressure in a short time by minimizing the volume of the processing space S2.

[0210] The gas supply channel 420 passes through the lower surface of the process chamber 100, can be connected to an external process gas storage unit, and receives process gas, and can supply process gas to the gas supply nozzle 410.

[0211] At this time, the air supply channel 420 may be a pipe that passes through the lower surface of the process chamber 100. As another example, the air supply channel 420 may be formed by machining the lower surface of the process chamber 100.

[0212] On the other hand, as another example, such as Figure 10 As shown, the gas supply unit 400 may include: a gas injection unit 430 forming a first diffusion space S5 for diffusing process gas; and a plurality of gas injection holes 440 formed in the gas injection unit 430 to inject process gas toward the processing space S2.

[0213] Additionally, the gas supply unit 400 may also include a first fastening member 450, which passes through the gas injection unit 430 to be coupled to the gas diffusion unit 1000.

[0214] At this time, the process chamber 100 may include a gas supply channel 190, which passes through the lower surface of the process chamber 100 and communicates with the first diffusion space S5, and supplies process gas from the outside to the first diffusion space S5.

[0215] The gas supply channel 190, as a structure corresponding to the gas supply channel 420 mentioned above, can be a structure used to pass through the process chamber 100 and transfer process gas from the outside to the first diffusion space S5.

[0216] That is, the gas supply channel 190 passes through the lower surface of the process chamber 100 and can be connected to an external process gas storage unit, and can receive process gas and supply process gas to the gas supply unit 400 described later.

[0217] At this time, the gas supply channel 190 can be formed by a pipe provided through the lower surface of the process chamber 100. As another example, the gas supply channel 190 can be formed by processing the lower surface of the process chamber 100.

[0218] Additionally, the gas supply channel 190 may be formed in at least one location in the lower surface of the process chamber 100 at a position adjacent to the edge of the substrate 1 on which the gas supply section 400 described later is disposed.

[0219] Therefore, the gas supply unit 400 can be a structure that forms a first diffusion space S3 connected to the gas supply channel 190 to diffuse the supplied process gas and inject it into the processing space S2.

[0220] The gas injection section 430 is configured as an annular ring along the edge of the substrate support section 200, and can be configured to surround the edge of the substrate support section 200, that is, surround the substrate 1.

[0221] Therefore, the gas injection unit 430 can inject process gas into the processing space S2 at the edge closest to the substrate 1.

[0222] On the other hand, the gas jet section 430 surrounds the edge of the substrate support section 200, that is, surrounds the substrate 1, and is disposed on the inner wall of the aforementioned mounting groove 130, penetrating in the vertical direction. The gas jet section 430 can be fixedly disposed by a plurality of second fastening components (not shown) combined with the process chamber 100.

[0223] At this time, a first diffusion groove 431 for forming the first diffusion space S5 can be formed on the bottom surface of the gas injection section 430.

[0224] For example, such as Figure 11 and Figure 12 As shown, the gas injection section 430 is an annular structure, and a corresponding annular first diffusion groove 431 can be formed on the bottom surface. The first diffusion groove 431 can be covered by the bottom surface 120 of the process chamber 100 or the gas diffusion section 1000, thereby forming the first diffusion space S5.

[0225] On the other hand, at this time, a plurality of gas injection holes 440, which will be described later, are formed on the gas injection section 430, which can inject process gas into the processing space S2, and the surface can be formed as a horizontal plane.

[0226] Therefore, the gas injection section 430 does not directly inject process gas toward the substrate 1 side, but instead directly injects it toward the bottom surface of the inner cover section 300 that forms the processing space S2 and then sprays it toward the substrate 1 side, thereby minimizing the impact of the process gas injection pressure and temperature on the substrate 1.

[0227] Additionally, as another example, such as Figure 14 As shown, the gas injection section 430 can be formed at an angle, becoming higher towards the edge, and multiple gas injection holes 440 are formed thereon, so that process gas can be naturally injected into the substrate 1 side in the processing space S2.

[0228] That is, because the gas jet section 430 is formed at an angle, the process gas is not jetted vertically upward, but can be jetted towards the side of the upper substrate 1.

[0229] On the other hand, the gas jet section 430 can of course be tilted so that it becomes lower towards the edge.

[0230] Additionally, as another example, such as Figure 15 As shown, a first diffusion space S5 is formed inside the gas injection section 430, and may include a through port 432. The through port 43 may be formed in the bottom surface of the gas injection section 430 at a position corresponding to the gas supply channel 190 to receive process gas from the gas supply channel 190.

[0231] That is, the gas injection section 430, as a structure that forms a first diffusion space S5 inside, can form a through port 432 at a position corresponding to the gas supply channel 190 or the gas delivery hole 1020 on the gas diffusion section 1000 described later, so as to supply process gas to the first diffusion space S5.

[0232] In this case, as described above, the gas injection section 430 is manufactured by welding or other means to cover the bottom surface of the cover (not shown) while the first diffusion groove 431 is formed, thereby preventing the leakage of process gas from the injection section 430 and the gas diffusion section 1000 to the substrate support section 200 side.

[0233] The gas injection hole 440 is a structure formed on the gas injection section 430 to inject process gas into the processing space S2, and multiple gas injection holes 440 can be configured.

[0234] At this time, a plurality of gas injection holes 440 can be formed on the gas injection section 430. With the annular gas injection section 430 as a reference, the plurality of gas injection holes 440 can be spaced at the same distance and have the same size.

[0235] That is, the gas injection holes 440 can be symmetrically arranged on the plane with respect to the center of the substrate support portion 200.

[0236] In addition, as another example, considering that a single gas supply channel 190 is configured on one side of the edge with reference to the substrate support 200 in order to uniformly spray gas, the gas injection hole 440 may be formed to gradually or progressively reduce in size as it is adjacent to the side of the gas supply channel 190.

[0237] That is, the amount of process gas injected through the gas injection hole 440 located adjacent to the gas supply channel 190 on the plane can be greater than the amount of process gas injected through the gas injection hole 440 located far away from the gas supply channel 190. To compensate for this phenomenon, the size and arrangement of the gas injection hole 440 can be appropriately adjusted.

[0238] Thus, the gas injection hole 440 can be configured to gradually or gradually decrease in size as it becomes adjacent to the gas supply channel 190 side. As another example, the gas injection hole 440 can be configured to gradually or gradually increase in the spacing between adjacent gas injection holes 440 as it becomes adjacent to the gas supply channel 190 side.

[0239] The gas diffusion section 1000 is a structure that is disposed between the gas supply section 400 and the process chamber 100 and forms a second diffusion space S6 to diffuse the process gas delivered to the gas supply section 400. Various structures can be adopted.

[0240] That is, the gas diffusion unit 1000 may be configured between the gas supply unit 400 and the gas supply channel 190 to receive process gas from the gas supply channel 190 to perform the first diffusion, and to transfer the diffused gas to the gas supply unit 400.

[0241] At this time, a single gas diffuser 1000 can be configured, or, as another example, multiple gas diffusers 1000 can be stacked to guide increased diffusion.

[0242] A second diffusion groove 1010 may be formed on the bottom surface of the gas diffusion section 1000 to form a second diffusion space S6 together with the process chamber 100.

[0243] Additionally, the gas diffusion section 1000 may include at least one gas delivery hole 1020 formed thereon to deliver process gas from the second diffusion space S6 to the first diffusion space S5.

[0244] Additionally, the gas diffusion section 1000 may include a second stepped section 1030 formed thereon, such that a portion of the second stepped section 1030 is inserted into the first diffusion groove 431.

[0245] The gas diffusion section 1000, as a structure similar to the gas supply section 400 described above, can be configured as an annulus surrounding the edge of the substrate support section 200, and is configured to have the gas supply section 400 stacked on it, thus having a corresponding planar shape and size.

[0246] The second diffusion groove 1010 is formed on the bottom surface of the gas diffusion section 1000 to form the second diffusion space S6 together with the process chamber 100. It is the same as the first diffusion groove 431 and can be formed as an annular shape on the entire bottom surface.

[0247] That is, the second diffusion groove 1010 being covered by the process chamber 100 can form a second diffusion space S6.

[0248] As another example, such as Figure 15 As shown, a second diffusion space S6 is formed inside the gas diffusion section 1000, and may include a gas inlet 1040, which is formed in the bottom surface of the gas diffusion section 1000 at a position corresponding to the gas supply channel 190 to receive the supply of process gas from the gas supply channel 190.

[0249] That is, the gas diffusion section 1000, as a structure that forms a second diffusion space S6 inside, can form a gas inlet 1040 at a position corresponding to the gas supply channel 190 to receive process gas supply to the second diffusion space S6.

[0250] In this case, the gas diffusion section 1000 can be manufactured by welding or other means to form a cover (not shown) covering the bottom surface while the second diffusion groove 1010 is formed as described above, thereby preventing leakage of process gas from the gas diffusion section 100 to the substrate support section 200 side in contact with the process chamber 100.

[0251] The gas delivery hole 1020 is formed on the gas diffusion section 1000 to deliver process gas from the second diffusion space S6 to the first diffusion space S5. Preferably, multiple gas delivery holes 1020 can be formed.

[0252] At this time, the gas delivery holes 1020 can be symmetrically arranged on the plane with respect to the center of the substrate support 200, and can be arranged at equal intervals.

[0253] In addition, as another example, similar to the gas injection hole 440 described above, the gas delivery hole 1020 can also be formed asymmetrically, taking into account the gas supply channel 190.

[0254] The second stepped portion 1030 may be a structure in which a step is formed by protruding on the gas diffuser portion 1000 so that a part of the second stepped portion 1030 is inserted into the first diffuser groove 431.

[0255] That is, the second stepped portion 1030 protrudes on the top to form a step and is inserted into the first diffusion groove 431, thereby forming a step between the gas diffusion portion 1000 and the gas supply portion 400 contact portion and the first diffusion space S5, which can minimize the leakage of process gas.

[0256] In addition, in order to insert a portion of the gas diffusion section 1000 into or a portion of the gas supply channel 190 into the second diffusion groove 1010, a first step section 191 may be formed as a step on the bottom surface 120 of the corresponding process chamber 100.

[0257] That is, such as Figure 13 As shown, the first stepped portion 191 is formed on the bottom surface 120 to insert a portion of the gas diffuser portion 1000, which can prevent leakage from the second diffusion space S6 formed between the gas diffuser portion 1000 and the process chamber 100.

[0258] In another example, the bottom surface 120 of the gas supply channel 190 protrudes into the second diffusion groove 1010, thereby forming a step between the gas diffusion section 1000 and the process chamber 100 contact surface to prevent process gas from leaking from the second diffusion space S6.

[0259] The inner cover driving part 600 is provided on the upper surface of the through process chamber 100 to drive the inner cover part 300 to move up and down, and various structures can be adopted.

[0260] For example, the inner cover drive unit 600 may include: a plurality of drive rods 610, one end of which passes through the upper surface of the process chamber 100 to be coupled to the inner cover 300; and at least one drive source 620, connected to the other end of the plurality of drive rods 610, to drive the drive rods 610 in the up and down direction.

[0261] Additionally, the inner cover drive unit 600 may include: a fixed support unit 640 disposed on the upper surface of the process chamber 100, i.e., the top cover 140, which fixes and supports the end of the drive rod 610; and a first corrugated pipe 630 disposed between the upper surface of the process chamber 100 and the inner cover 300, which surrounds the drive rod 610.

[0262] In addition, in the temperature regulating unit 1100 described later, the rod portion 1120 moves up and down as the inner cover portion 300 moves up and down. In order to prevent gas leakage to the outside due to the rod portion 1120 passing through the top cover 140, the inner cover driving unit 600 may include a second bellows 650 surrounding the rod portion 1120.

[0263] The drive rod 610 may have one end penetrating through the upper surface of the process chamber 100 and being connected to the inner cover 300, while the other end is connected to the drive source 620 outside the process chamber 100. The drive source 620 moves the rod up and down, thereby driving the structure of the inner cover 300 up and down.

[0264] At this time, instead of forming multiple drive rods 610, two or four drive rods 610 can be formed and attached to the upper part of the inner cover 300 at predetermined intervals, thereby guiding the inner cover 300 to move up and down while maintaining a horizontal position.

[0265] The drive source 620 is a structure of the drive rod 610 that is set above and below the fixed support 640 for driving and can adopt various structures.

[0266] For the drive source 620, any structure can be applied as long as it is a previously disclosed drive method. For example, it can be applied to various drive methods such as cylinder drive, electromagnetic drive, screw motor drive, cam drive, etc.

[0267] The bellows 630 may be a structure that surrounds the drive rod 610 and is disposed between the upper surface of the process chamber 100 and the inner cover 300 to prevent gas or the like in the internal space S1 from leaking through the upper surface of the process chamber 100.

[0268] On the other hand, the first bellows 630 can be positioned by moving the inner cover 300 up and down.

[0269] One end of the second bellows 650 is attached to the cover plate 1140 described later, and the other end is attached to the bottom surface of the top cover 140, which is configured to surround the rod portion 1120. This also prevents gas leakage from the top cover 140 through the rod portion 1120 when the inner cover portion 300 and the temperature regulating plate 1110 move up and down.

[0270] The temperature regulating unit 1100, which is provided in the inner cover 300 to regulate the temperature of the substrate 1 located in the processing space S2 together with the internal heater 230, can adopt various structures.

[0271] That is, the temperature regulating unit 1100 can be a structure that heats or cools the substrate 1 to regulate the temperature of the processing space S2 and the substrate 1 together with the internal heater 230.

[0272] For example, such as Figure 5 As shown, the temperature regulating part 1100 may include: a temperature regulating plate 1110 disposed in the inner cover 300 to heat or cool the substrate 1; and a rod 1120 that passes through the top cover 140 to be attached to the temperature regulating plate 1110.

[0273] In addition, the temperature regulating part 1100 may also include a buffer plate 1130, which is attached to the through opening 320 on the lower side of the inner cover part 300 to cover the temperature regulating plate 1110.

[0274] In addition, the temperature regulating unit 1100 may also include a cover plate 1140, which is configured to cover the through opening 320 on the upper side of the inner cover 300.

[0275] The temperature regulating plate 1110, which is provided in the inner cover 300 to heat or cool the substrate 1, can adopt various structures.

[0276] For example, as described above, the temperature regulating plate 1110 is provided in the through-hole 320 formed in the inner cover 310, which can heat or cool the substrate 1.

[0277] On the other hand, the aforementioned internal heater 230 is configured as a heating element that generates heat through power supply. It is a structure that supplies heat to the substrate 1 and the processing space S2 through the substrate support plate 210. This has the problem of long initial heating time and difficulty in responding to rapid temperature changes immediately.

[0278] Accordingly, the temperature regulating plate 1110 is a structure for instantly heating the substrate 1 in a short time, for example, a halogen lamp or an LED heater can be used.

[0279] In addition, a cooling flow path can be formed inside the temperature regulating plate 1110 so that the substrate 1 can be cooled by the circulation of refrigerant in a short time.

[0280] On the other hand, a step is formed at the edge of the temperature regulating plate 1110, which can be supported by the support step 340 formed in the through opening 320 of the inner cover 310 as described above.

[0281] Furthermore, as another example, the temperature regulating plate 1110 can of course be set on the bottom surface of the inner cover 310 by simply pasting, bonding, or the like, so as to be directly exposed on the substrate 1.

[0282] In addition, the temperature regulating plate 1110 may include at least two temperature regulating areas, which are distinct from each other on a plane and can adjust their temperatures independently.

[0283] At this time, as Figure 8As shown, the temperature regulation area may include: a first temperature regulation area 1111, which shares a center with the temperature regulation plate 1110 formed in a circle on the plane, and is divided into a circle on the plane at a position corresponding to the center side of the substrate 1; a third temperature regulation area 1113, which is divided at the edge of the temperature regulation plate 1110; and a second temperature regulation area 1112, which is divided between the first temperature regulation area 1111 and the third temperature regulation area 1113.

[0284] That is, the temperature regulation area can be divided into areas where the temperature can be adjusted independently, based on the area of ​​the substrate 1 corresponding to the area facing the temperature regulation plate 1110, thereby allowing the temperature of a specific area of ​​the substrate 1 to be adjusted independently of the divided areas.

[0285] The rod portion 1120 serves as a structure that connects to the temperature regulating plate 1110 through the top cover 140, and various structures can be adopted.

[0286] At this time, the rod portion 1120 may be hollow inside, so as to supply various refrigerants or power to the temperature regulating plate 1110 from the outside.

[0287] For example, the rod 1120 may include: a rod 1121 that passes through the top cover 140 to be attached to the temperature regulating plate 1110 to support the temperature regulating plate 1110; and a supply line 1122 that is inserted into the hollow of the rod 1121 to supply power or refrigerant to the temperature regulating plate 1110 from the outside.

[0288] The buffer plate 1130, which is attached to the through opening 320 on the lower side of the inner cover 300 to cover the temperature regulating plate 1110, can adopt various structures.

[0289] For example, such as Figure 6 As shown, the buffer plate 1130 is connected to the through opening 320 on the lower side of the inner cover 300, and can be located between the temperature regulating plate 1110 and the substrate 1, and can mediate the heat exchange between the temperature regulating plate 1110 and the substrate 1.

[0290] At this time, the buffer plate 1130 can also be stably designed and manufactured under high temperature and high pressure, and can be formed of quartz material.

[0291] Therefore, the buffer plate 1130 can prevent the temperature regulating plate 1110 from being directly exposed to the high-pressure environment of the processing space S2, minimize the impact of high pressure, and protect the temperature regulating plate 1110 while facilitating heat exchange.

[0292] At this time, as Figure 2As shown, the buffer plate 1130 can be disposed on the lower side of the through opening 320 of the inner cover 310, or more specifically, it can be disposed supported by the support portion 350 disposed on the lower edge of the through opening 320 of the inner cover 310.

[0293] The cover plate 1140 can be configured to cover the through opening 320 on the upper side of the inner cover 300, and various structures can be adopted.

[0294] For example, the cover plate 1140 can cover the through opening 320 of the temperature regulating plate 1110 with the inner cover 310 in the state where the rod 1120 is through, and combined with the end of the second corrugated pipe 650, the temperature regulating plate 1110 can be easily moved.

[0295] The control unit may be a structure that controls the heating or cooling of the temperature regulation unit 1100.

[0296] For example, considering that the edge temperature of substrate 1 is relatively lower than that of the center side, in order to compensate for this phenomenon, the control unit can control the third temperature adjustment region 1113 to a temperature higher than that of the first temperature adjustment region 1111.

[0297] In addition, the control unit can control the temperature regulation unit 1100 to maintain a constant temperature for the substrate 1 or the processing space S2 during the pressure transformation process of the processing space S2.

[0298] In particular, such as Figure 9 As shown, the substrate processing apparatus of the present invention performs a rapid pressure change on the processing space S2 because the pressure change in the processing space S2 where the substrate 1 is located causes a rapid temperature change.

[0299] To prevent such temperature changes, the temperature regulating unit 1100 can be controlled to maintain a constant temperature for the substrate 1 and the processing space S2.

[0300] On the other hand, as described above, when the substrate support 200 is provided in the setting groove 130, a space is formed between the substrate support 200, more specifically, the substrate support plate 210 and the setting groove 130, which may be a factor that increases the volume of the processing space S2.

[0301] To improve this problem, when the board support 200 is placed in contact with the setting groove 130, the following problems exist: heat supplied by the heater present in the board support 200 is absorbed by the process chamber 100 through the lower surface of the process chamber 100, i.e., the setting groove 130, and heat loss occurs. Furthermore, it is difficult to set and maintain the process temperature in the processing space S2, which reduces efficiency.

[0302] To improve this problem, the filling member 700 of the present invention is a structure provided between the substrate support 200 and the lower surface of the process chamber 100, and can adopt various structures.

[0303] For example, the filling member 700 can be disposed in the setting groove 130. When disposed in the setting groove 130, the substrate support plate 210 is disposed on the upper side of the filling member 700, minimizing the remaining volume between the setting groove 130 and the substrate support plate 210, thereby reducing the volume of the processing space S2.

[0304] Therefore, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130 and the substrate support 200, so as to minimize the processing space S2.

[0305] More specifically, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130, which is circular in the plane and has a step with a predetermined depth from the bottom surface 120, and the substrate support plate 210, which is circular in the plane.

[0306] That is, the filling member 700 is configured to be adjacent to at least one of the side surface and bottom surface of the substrate support plate 210 and spaced apart from the substrate support plate 210, so as to surround the bottom surface and side surface of the substrate support plate 210.

[0307] In order to prevent heat loss through the filling member 700, the substrate support 200 may be spaced apart from the filling member 700, or more specifically, may be spaced apart to the extent that they do not contact each other.

[0308] Accordingly, a predetermined distance can be maintained between the substrate support 200 and the filling member 700, and this distance serves as an exhaust channel, thereby enabling the exhaust of the processing space S2.

[0309] More specifically, since the substrate support 200 and the filling member 700 are spaced apart to form an exhaust channel, the exhaust channel is connected to the bottom of the setting groove 130 through which the substrate support column 220 passes, and the process gas of the processing space S2 can be discharged to the outside.

[0310] On the other hand, the filling component 700 can be formed of at least one material selected from quartz, ceramic and SUS.

[0311] In addition, the filling member 700 not only occupies the space between the setting groove 130 and the substrate support 200 simply to minimize the volume of the processing space S2, but also minimizes the heat loss transmitted to the substrate 1 through the substrate support 200 by heat insulation, and further reflects the lost heat back to the processing space S2 by heat reflection.

[0312] That is, the filling component 700 can not only minimize the volume of the processing space S2, but also include heat insulation to prevent heat loss through the substrate support 200 to the bottom surface 120 side of the process chamber 100, and further improve thermal efficiency through heat reflection.

[0313] On the other hand, in order to increase the reflective effect of the heat emitted through the substrate support 200 reflected into the processing space S2, the filling member 700 may also include a reflective portion 720 disposed on the surface.

[0314] That is, the filling component 700 may include: a heat insulation part 710 for insulating heat from the processing space S2 to the outside; and a reflective part 720 disposed on the surface of the heat insulation part 710 to reflect heat.

[0315] At this time, the reflective part 720 can be coated, pasted or applied to the surface of the heat insulation part 710 to form a reflective layer, which reflects the heat lost from the processing space S2 through the process chamber 100 and can transfer heat back to the processing space S2.

[0316] In addition, the filling component 700 may also include: a first through-hole 731, which is formed at the center of the filling component 700 with a size corresponding to the substrate support post 220 in order to set the substrate support post 220; and a plurality of second through-holes 732 for multiple substrate support pins 810 to pass through and move up and down.

[0317] The substrate support pin 800 serves as a structure that supports the substrate 1, which is introduced and removed from the process chamber 100, and is placed in the substrate support 200. Various structures can be adopted.

[0318] For example, the substrate support pin portion 800 may include: a plurality of substrate support pins 810 that pass through the filling member 700 and the substrate support portion 200 and move up and down to support the substrate 1; a substrate support ring 820 that is formed in a ring shape and is provided with a plurality of substrate support pins 810; and a substrate support pin driving portion 830 that drives the plurality of substrate support pins 810 up and down.

[0319] The plurality of substrate support pins 810 can be configured in the substrate support ring 820 to move up and down through the filling member 700 and the substrate support portion 200 to support the substrate 1, and various structures can be adopted.

[0320] At this time, at least three substrate support pins 810 can be configured and are respectively arranged in the substrate support ring 820 at intervals. The substrate support pins 810 rise from the substrate support portion 200 to expose themselves to support the introduced substrate 1 or the exported substrate 1. The substrate support pins 810 descend to be located inside the substrate support portion 200, so that the substrate 1 can be placed in the substrate support portion 200.

[0321] The substrate support ring 820 can be a ring structure with multiple substrate support pins 810, which can be moved up and down simultaneously by moving up and down.

[0322] In particular, the substrate support ring 820 is provided on the lower surface of the process chamber 100, that is, in the support pin setting groove 160 formed in the setting groove 130, and can be moved up and down by the substrate support pin drive part 830.

[0323] The substrate support pin drive unit 830 is a structure provided outside the process chamber 100 to drive the substrate support ring 820 up and down, and various structures can be adopted.

[0324] For example, the substrate support pin drive unit 830 may include: a substrate support pin 831, one end of which is connected to the bottom surface of the substrate support ring 820, and the other end of which is connected to the substrate support pin drive source 833, and moves up and down by the driving force of the substrate support pin drive source 833; a substrate support pin guide 832, which guides the linear movement of the substrate support pin 831; and a substrate support pin drive source 833, which drives the substrate support pin 831.

[0325] In addition, the substrate support pin portion 800 may also include a substrate support pin bellows 840, which surrounds the substrate support pin rod 831 and is disposed between the bottom surface of the process chamber 100 and the substrate support pin drive source 833.

[0326] Hereinafter, another embodiment of the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings, omitting repeated descriptions of structures identical to those described above.

[0327] Therefore, the above content can be applied to all structures that omit repeated explanations.

[0328] like Figure 16As shown, the substrate processing apparatus of the present invention includes: a process chamber 100, including a chamber body 110 and a top cover 140, the upper part of the chamber body 110 being open, and a mounting groove 130 being formed on the center side of the bottom surface 120, and a gate 111 for the entry and exit of the substrate 1 being included on one side, the top cover 140 being attached to the upper part of the chamber body 110 to form a non-processing space S3; a substrate support 200 being inserted into the mounting groove 130 of the chamber body 110, and the substrate 1 being placed on it; The inner cover 300 is movably disposed in the internal space. By descending, a portion of it is pressed against the bottom surface 120 adjacent to the mounting groove 130 to form a sealed processing space S2 containing the substrate support 200. The first pressure regulating part 1200 is connected to the processing space S2 and regulates the pressure of the processing space S2. The second pressure regulating part 1300 is connected to the non-processing space S3 and regulates the pressure of the non-processing space S3 independently of the processing space S2.

[0329] In addition, the substrate processing apparatus of the present invention may also include an inner cover driving unit 600, which is disposed through the upper surface of the process chamber 100 to drive the inner cover 300 to move up and down.

[0330] In addition, such as Figure 5 As shown, the substrate processing apparatus of the present invention may further include a control unit, which controls the adjustment of the pressure of the processing space S2 and the non-processing space S3 through the first pressure adjustment unit 1200 and the second pressure adjustment unit 1300.

[0331] In addition, the process chamber 100 may also include an air supply port 170, which is disposed on one side of the process chamber 100 and connected to the second gas supply unit 1310 described later, so as to supply filling gas to the non-processing space S3.

[0332] Additionally, the process chamber 100 may also include an exhaust port 180, which is disposed on the other side of the process chamber 100 and connected to the second gas discharge section 1320 described later, for venting in the non-processing space S3.

[0333] The gas supply port 170 may be configured on one side of the chamber body 110 of the process chamber 100 and connected to the second gas supply unit 1310.

[0334] For example, the air supply hole 170 can be formed on one side of the chamber body 110 by processing or provided in a through-hole formed on one side of the chamber body 110.

[0335] Therefore, the gas supply port 170 is provided with a second gas supply unit 1310, which can connect the non-processing space S3 and the second gas supply unit 1310, thereby supplying filling gas to the non-processing space S3.

[0336] The exhaust port 180 may be configured on the other side of the chamber body 110 of the process chamber 100 and connected to the second gas exhaust section 1320.

[0337] For example, the vent 180 is formed on the other side of the chamber body 110 by machining or is provided as a through-hole formed on the other side of the chamber body 110.

[0338] Therefore, the exhaust port 180 is provided with a second gas discharge section 1320 to exhaust gas from the non-processing space S3.

[0339] At this time, the inner cover 300 can be formed on the plane to cover the setting groove 130 and the edge corresponds to a part of the bottom surface 120. Since the edge is close to the bottom surface 120, a sealing space S2 can be formed between the bottom surface 120 and the setting groove 130.

[0340] On the other hand, as another example, the edge of the inner cover 300 can be close to the inner side of the process chamber 100 to form a processing space S2.

[0341] In addition, in order to effectively reach and maintain the process temperature within the sealed processing space S2 formed by the up-and-down movement of the inner cover 300, the inner cover 300 can be formed of a material with excellent heat insulation properties, which can prevent the temperature of the processing space S2 from being lost to the internal space.

[0342] That is, the inner cover 300 is movably disposed in the internal space S1. By descending, a portion of it is closely attached to the bottom surface 120 adjacent to the mounting groove 130, which can divide the internal space S1 into a sealed processing space S2 containing the substrate support 200 and a non-processing space S3.

[0343] As a result, by lowering and closely adhering to the bottom surface 120, the inner cover 300 can divide the internal space S1 inside the process chamber 100 into a sealed processing space S2 containing a substrate support 200 and a non-processing space S3. The inner cover 300 can connect the processing space S2 and the non-processing space S3 by rising.

[0344] The first pressure regulating unit 1200 can be configured to communicate with the processing space S2 and regulate the pressure of the processing space S2, and various structures can be adopted.

[0345] For example, the first pressure regulating unit 1200 may include a gas supply unit 400 and a gas discharge unit 1220, wherein the gas supply unit 400 supplies process gas to the processing space S2, and the gas discharge unit 1220 performs venting on the processing space S2.

[0346] That is, the first pressure regulating unit 1200 supplies process gas to the processing space S2 and appropriately exhausts the processing space S2, thereby regulating the pressure of the processing space S2. Accordingly, as Figure 9 As shown, the processing space S2 can be repeatedly transformed in a short period of time to create a pressure environment with high pressure and low pressure.

[0347] More specifically, the pressure in the processing space S2 can be repeatedly changed at a pressure change rate of 1 Bar / s within a pressure range of 5 Bar to 0.01 Torr.

[0348] In particular, at this time, the first pressure regulating unit 1200 can reduce the pressure of the processing space S2 from the first pressure to atmospheric pressure, and can gradually reduce the pressure of the processing space S2 from atmospheric pressure to the second pressure of vacuum.

[0349] In addition, the first pressure adjustment unit 1200 can repeatedly change the pressure of the processing space S2 from the first pressure through the second pressure and back to the first pressure multiple times for substrate processing.

[0350] The gas supply unit 400, which is connected to the processing space S2 to supply process gas, is also applicable to the structure described above, so detailed description is omitted.

[0351] The gas emission section 1220 serves as the structure for venting the processing space S2, and various structures can be adopted.

[0352] For example, the gas discharge unit 1220 includes an external exhaust device that communicates with the processing space S2 and is located outside, thereby controlling the exhaust volume of the processing space S2 and thus adjusting the pressure of the processing space S2.

[0353] The second pressure regulating unit 1300 can be configured to communicate with the non-processing space S3 and regulate the pressure of the non-processing space S3 independently of the processing space S2, and various structures can be adopted.

[0354] In particular, the second pressure regulating unit 1300 can independently regulate the pressure of the non-processing space S3, which is separated from the processing space S2.

[0355] For example, the second pressure regulating unit 1300 may include: a second gas supply unit 1310, which is connected to the non-processing space S3 and supplies filling gas to the non-processing space S3; and a second gas discharge unit 1320, which performs venting of the non-processing space S3.

[0356] The second gas supply unit 1310 is connected to the aforementioned gas supply port 170 and can supply filling gas to the non-processing space S3, thereby adjusting the pressure of the non-processing space S3.

[0357] The second gas discharge section 1320 is a structure connected to the above-mentioned exhaust port 180 to perform exhaust of the non-processing space S3, thereby adjusting the pressure of the non-processing space S3.

[0358] On the other hand, for the second gas supply section 1310 and the second gas discharge section 1320, any structure can be applied as long as it is a conventionally disclosed structure for supplying and discharging filling gas.

[0359] During the process of changing the pressure of the processing space S2 where the substrate 1 is placed from a first pressure higher than normal pressure to a second pressure for substrate processing, the second pressure regulating unit 1300 can maintain the non-processing space S3 at a constant pressure.

[0360] At this time, the second pressure regulating unit 1300 can maintain the pressure of the non-processing space S3 in a vacuum during the substrate processing, and can maintain the pressure at a level lower than or the same as that of the processing space S2 during the process.

[0361] That is, the second pressure regulating unit 1300 maintains a constant second pressure, namely 0.01 Torr, in the non-processing space S3 during the substrate processing, thereby maintaining the pressure at the same level as or lower than that in the processing space S2, thereby preventing impurities in the non-processing space S3 from flowing into the processing space S2.

[0362] On the other hand, as another example, the second pressure regulating unit 1300 can change the pressure of the non-processing space S3, and in this process, it can also have a pressure value lower than that of the processing space S2.

[0363] Furthermore, the second pressure regulating unit 1300 does not need to supply filling gas to the non-processing space S3 during the substrate processing; instead, it can regulate the pressure of the non-processing space S3 simply by venting.

[0364] That is, the second pressure regulating unit 1300 does not need to supply filling gas through the second gas supply unit 1310, but can regulate the pressure of the non-processing space S3 simply by operating the second gas discharge unit 1320.

[0365] On the other hand, as another example, the second pressure regulating unit 1300 may also supply filling gas to the non-processing space S3, and regulate the pressure of the non-processing space S3 together with the exhaust gas from the second gas discharge unit 1320.

[0366] On the other hand, unlike the above, the second pressure regulating unit 1300, as an exhaust port 180 formed on one side of the process chamber 100, i.e., an air supply port 170 formed on the other side, can be an air supply port 170 for transmitting filling gas supplied from the outside and an exhaust port 180 for venting the non-processing space S3.

[0367] The control unit may be a structure that controls the pressure of the processing space S2 and the non-processing space S3 by adjusting the pressure through the first pressure regulating unit 1200 and the second pressure regulating unit 1300.

[0368] In particular, the control unit is associated with the process steps of substrate processing and can control the non-processing space S3 and the processing space S2 in each step using the first pressure regulating unit 1200 and the second pressure regulating unit 1300.

[0369] For example, when the inner cover 300 is in a state where it is in the interconnected processing space S2 and non-processing space S3, the control unit can perform the supply of purging gas through the gas supply unit 400 and the exhaust of gas through the second gas discharge unit 1320.

[0370] More specifically, in order to clean the processing space S2 where substrate processing is performed, with the inner cover 300 raised and in a state where the processing space S2 and the non-processing space S3 are interconnected, the control unit can perform cleaning or purging of the area around the substrate support 200 where substrate processing is performed by supplying purging gas through the gas supply unit 400.

[0371] Furthermore, by discharging purge gas through the second gas discharge section 1320 located on the side of the process chamber 100, the purge gas supplied by the gas supply section 400 is guided to rise and flow on the side, thereby guiding the internal floating matter to be discharged to the non-processing space S3 and the outside.

[0372] In addition, before the inner cover 300 rises, the control unit adjusts the pressure of the processing space S2 and the non-processing space S3 to have the same pressure by at least one of the first pressure adjustment unit 1200 and the second pressure adjustment unit 1300.

[0373] More specifically, the control unit performs substrate processing in a state where a sealed processing space S2 is formed by the descent of the inner cover 300. Before the inner cover 300 is raised to export the processed substrate 1, in order to prevent the substrate 1 from changing position or being damaged due to the pressure difference between the non-processing space S3 and the processing space S2, the control unit can control the pressure between the non-processing space S3 and the processing space S2 to be the same through at least one of the first pressure regulating unit 1200 and the second pressure regulating unit 1300.

[0374] That is, while maintaining the pressure difference between the non-processing space S3 and the processing space S2, when the inner cover 300 rises to connect the non-processing space S3 and the processing space S2, in order to prevent the substrate 1 from being affected by the unidirectional airflow generated due to the pressure difference, the control unit can control at least one of the first pressure adjustment unit 1200 and the second pressure adjustment unit 1300 to adjust the non-processing space S3 and the processing space S2 to have the same pressure.

[0375] Hereinafter, a method for processing a substrate using the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings.

[0376] like Figures 16 to 18 As shown, the substrate processing method of the present invention includes: a substrate import step S100, in which the substrate 1 is imported into the internal space S1 through the gate 111 by a transfer robot configured externally and placed in the substrate support 200; a processing space forming step S200, in which, with the substrate 1 placed in the substrate support 200 by the substrate import step S100, the inner cover 300 is lowered and a portion of the inner cover 300 is pressed tightly against the bottom surface 120 of the process chamber 100, thereby dividing the internal space S1 into a sealed processing space S2 and a non-processing space S3; and a substrate processing step S300, in which substrate processing is performed on the substrate 1 disposed in the processing space S2.

[0377] In addition, the substrate processing method of the present invention may further include: a processing space release step S400, in which, after performing substrate processing through the substrate processing step S300, the inner cover 300 is raised to release the sealed processing space S2; and a substrate export step S500, in which the substrate 1 that has completed substrate processing is exported from the internal space S1 to the outside through the gate 111 by a transfer robot configured on the outside.

[0378] In addition, the substrate processing method of the present invention may also include a cleaning step, wherein before the substrate 1 is introduced into the internal space S1 through the substrate introduction step S100, process gas is supplied through the processing space S2 side and process gas is discharged through the non-processing space S3 side in the state of the raised inner cover 300.

[0379] The substrate import step S100 is a step in which the substrate 1 is imported into the internal space through the gate 111 by a transfer robot configured externally and placed in the substrate support 200, and can be performed by various methods.

[0380] That is, the substrate import step S100 involves using an external transfer robot to import the substrate 1, which is the object of processing, into the internal space S1 and place it in the substrate support 200, so that the substrate 1 can be prepared for processing.

[0381] For example, the substrate introduction step S100 may include an introduction pin raising step before the introduction step described later, wherein the introduction pin raising step is to raise the substrate support pin 810 to the upper side of the substrate support portion 200 while the inner cover portion 300 is raised.

[0382] Additionally, the substrate import step S100 may include: an import step in which the substrate 1 is imported into the internal space through the gate 111 by a transfer robot configured externally, and the substrate 1 is supported by the rising substrate support pin 810; and an import pin lowering step in which the substrate support pin 810 supporting the substrate 1 is lowered and the substrate 1 is placed in the substrate support part 200.

[0383] The step of raising the guide pin can be a step of raising the substrate support pin 810 to the upper side of the substrate support portion 200 while the inner cover portion 300 is raised, that is, while the processing space S2 is released.

[0384] At this time, the substrate processing is repeatedly performed on multiple substrates 1. The inlet pin rising step can be performed when the substrate 1 is first introduced. Then, the substrate 1 that has completed the substrate processing is exported by raising the substrate support pin 810 through the outlet pin rising step described later. Then, the inlet step can be performed directly. Therefore, the inlet pin rising step can be omitted.

[0385] As a result, the step of raising the guide pin is performed when the substrate 1 is initially introduced into the substrate processing device, and can be omitted thereafter.

[0386] The importing step can be a step in which the substrate 1 is imported into the internal space S1 through the gate 111 by a transfer robot configured externally, and the substrate 1 is supported by the substrate support pin 810.

[0387] More specifically, in the import step, when the substrate 1, which is supported by the externally configured transfer robot, is imported into the internal space S1 through the gate 111, the transfer robot descends and the substrate 1 is supported by the substrate support pin 810, while the external robot can be led out of the internal space S1.

[0388] On the other hand, as another example, it is also possible that when the substrate 1, which is supported by a transfer robot configured externally, is introduced into the internal space S1 through the gate 111, the substrate support pin 810 is raised, the substrate 1 is supported by the substrate support pin 810, and then the external robot is exported.

[0389] The step of lowering the guide pin is to lower the substrate support pin 810 of the substrate 1 and insert the substrate support pin 810 into the substrate support portion 200, or more specifically, into the substrate support plate 210, so that the substrate 1 can be placed on the substrate support plate 210.

[0390] The processing space forming step S200 is a step in which the inner cover 300 is lowered while the substrate 1 is placed on the substrate support 200 in the substrate introduction step S100, and a portion of the inner cover 300 is pressed tightly against the bottom surface 120 of the process chamber 100, thereby dividing the internal space S1 into a sealed processing space S2 and a non-processing space S3, and can be performed by various methods.

[0391] For example, the processing space forming step S200 is to lower the inner cover 300 while the substrate 1 is placed on the substrate support 200 so as to closely adhere to the bottom surface 120 of the process chamber 100 and the edge of the inner cover 300, thereby forming a sealed processing space S2. At this time, in order to form a sealed processing space S2, the sealing part 900 of the inner cover 300 can be closely attached to the bottom surface 120.

[0392] Accordingly, the processing space forming step S200 can form a separate, sealed processing space S2 that is separate from the internal space S1, and the volume of the processing space S2 can be minimized while the substrate 1 is disposed inside.

[0393] Furthermore, the processing space forming step S200 involves lowering the inner cover 300 and placing a portion of the inner cover 300 tightly against the bottom surface 120 of the process chamber 100, thereby dividing the internal space S1 into a sealed processing space S2 and a non-processing space S3.

[0394] This improves the problem of gate valve damage caused by creating high pressure in the internal space to perform substrate processing in the past, and forms a buffer space S3 between the processing space S2 and the gate valve, thus having the advantage of preventing gate valve damage even in high pressure substrate processing.

[0395] The substrate processing step S300 is a step of performing substrate processing on the substrate 1 disposed in the processing space S2, and can be performed by various methods.

[0396] At this time, the substrate processing step S300 can supply process gas into the sealed processing space S2 through the gas supply unit 400, thereby adjusting and controlling the pressure in the processing space S2.

[0397] In particular, such as Figure 17 As shown, the substrate processing step S300 can perform a pressure boosting step and a pressure depressurization step. The pressure boosting step is to increase the pressure of the processing space S2 by using process gas, and the pressure depressurization step is to decrease the pressure of the processing space S2 after the pressure boosting step.

[0398] At this time, the substrate processing step S300 can increase the pressure to a pressure higher than normal pressure, such as a high pressure of 5 bar, and can decrease the pressure to a pressure lower than normal pressure, such as a low pressure of 0.01 torr.

[0399] In this case, the substrate processing step S300 can repeatedly perform the boost step and the buck step within a short period of time.

[0400] More specifically, the substrate processing step S300 includes: a pressure boosting step S310, which increases the pressure of the processing space S2 to a first pressure higher than the normal pressure; and a pressure depressurization step S320, which decreases the pressure of the processing space S2 from the first pressure to a second pressure.

[0401] In addition, the substrate processing step S300 can repeatedly execute the boost step S310 and the buck step S320 as a unit cycle, thereby repeatedly performing the voltage transformation of the processing space S2.

[0402] At this point, the second pressure can be a pressure lower than normal pressure, and the first pressure can be a pressure higher than normal pressure.

[0403] The pressure reduction step S320 may include: a first pressure reduction step S321, reducing the pressure of the processing space S2 from a first pressure to atmospheric pressure; and a second pressure reduction step S322, reducing the pressure of the processing space S2 from atmospheric pressure to a second pressure below atmospheric pressure.

[0404] Therefore, the pressure reduction step S320 can reduce the pressure in steps by reducing the pressure of the processing space S2 from a first pressure higher than normal pressure to normal pressure in a first pressure reduction step S321 and reducing the pressure from normal pressure to a second pressure lower than normal pressure in a second pressure reduction step S322.

[0405] In addition, during the process of changing the pressure in the processing space S2 during the substrate processing step S300, the pressure in the non-processing space S3 can be maintained at a constant vacuum pressure below atmospheric pressure.

[0406] The processing space release step S400 is a step in which the inner cover portion 300 is raised to release the sealing of the processing space S2 after the substrate processing is performed by the substrate processing step S300. It can be performed by various methods.

[0407] At this time, the processing space release step S400 raises the inner cover 300 through the inner cover drive part 600, thereby releasing the contact between the inner cover 300 and the bottom surface 120 of the process chamber 100, and connecting the internal space and the processing space S2, thereby releasing the sealed processing space S2.

[0408] On the other hand, in this case, if the inner cover 300 rises when the pressure difference between the processing space S2 and the non-processing space S3 is large, the pressure difference between the two spaces can cause damage to the substrate 1 and reduce its durability. Therefore, it is necessary to minimize the pressure difference between the two spaces.

[0409] Therefore, the processing space release step S400 may include: a pressure adjustment step S410, adjusting the pressure of at least one of the non-processing space S3 and the processing space S2, adjusting the pressure difference between the non-processing space S3 and the processing space S2 to below a preset level; and an inner cover lifting step S420, lifting the inner cover 300 to release the processing space S2.

[0410] At this time, the pressure regulation step S410 regulates the pressure of the processing space S2 by the gas supply unit 400 or the exhaust unit (not shown) for discharging the gas from the processing space S2, which can reduce the pressure difference between the processing space S2 and the non-processing space S3. Alternatively, by injecting gas into the non-processing space S3, the pressure difference between the non-processing space S3 and the processing space S2 can be reduced to below a predetermined level.

[0411] In this case, the pressure adjustment step S410 can be performed to adjust the pressure of at least one of the processing space S2 and the non-processing space S3 so that the pressure difference between the processing space S2 and the non-processing space S3 has a value within a predetermined range.

[0412] In particular, when the inner cover 300 rises in the high-pressure processing space S2 and the vacuum non-processing space S3, problems such as slippage of the substrate 1 may occur due to the sharp pressure difference between the spaces. Therefore, the inner cover 300 can rise when the pressure of the two spaces is adjusted to have the same pressure.

[0413] The substrate export step S500 is a step in which the substrate 1, after substrate processing, is exported from the internal space S1 to the outside through the gate 111 by a transfer robot configured externally. It can be performed by various methods.

[0414] That is, in the substrate export step S500, the substrate 1 that has completed substrate processing is received from the substrate support 200 by an external transfer robot, and the substrate 1 can be exported from the internal space S1.

[0415] For example, the substrate export step S500 may include: an export pin raising step, in which the substrate support pin 810 is raised, and the substrate 1, which is placed at an upward distance from the substrate support portion 200 and spaced apart from the substrate support portion 200, is supported by the substrate support pin 810; and an export step, in which the substrate 1, which has completed substrate processing, is exported from the internal space S1 to the outside through the gate 111 by a transfer robot configured externally.

[0416] In addition, the substrate export step S500 may include an export pin lowering step after the export step described later, wherein the export pin lowering step involves lowering the substrate support pin 810 into the interior of the substrate support portion 200.

[0417] The step of raising the guide pin can be a step of raising the substrate support pin 810 to the upper side of the substrate support portion 200 while the inner cover portion 300 is raised through the above-mentioned processing space release step S400, that is, in the state of releasing the processing space S2.

[0418] Therefore, the step of raising the guide pin involves moving the substrate support pin 810 upward from the substrate support plate 210 and exposing the substrate support pin 810, so as to space the substrate 1 upward from the substrate support plate 210, thereby supporting the processed substrate 1 placed on the substrate support portion 200.

[0419] The export step is a step in which the substrate 1, after substrate processing, is exported from the internal space S1 to the outside through the gate 111 by a transport robot configured externally.

[0420] More specifically, the export step involves a transfer robot that enters the internal space S1 through the gate 111 supporting the substrate 1 supported by the substrate support pin 810, which can export the supported substrate 1 to the outside.

[0421] Therefore, in the export step, with the processed substrate 1 supported by the substrate support pin 810, the transfer robot is located below the substrate 1. Raising the transfer robot allows it to support the substrate 1.

[0422] On the other hand, as another example, the export step is as follows: with the processed substrate 1 supported by the substrate support pin 810, the transfer robot is located below the substrate 1, and the substrate support pin 810 is lowered, thereby allowing the substrate 1 to be positioned on the transfer robot.

[0423] As described above, with the substrate 1 supported by the transfer robot, the transfer robot moves outward through the gate 111, thereby allowing the substrate 1 that has completed substrate processing to be exported.

[0424] The step of lowering the guide pin can be a step of lowering the substrate support pin 810 of the support substrate 1 and inserting the substrate support pin 810 into the substrate support portion 200, or more specifically, into the interior of the substrate support plate 210.

[0425] At this time, the step of lowering the export pin is performed repeatedly for multiple substrates 1. It can be performed after the last substrate 1 is exported. Before that, in order to perform the above-mentioned import step, it is necessary to keep the substrate support pin 810 in an upward state. Therefore, the step of lowering the export pin can be omitted.

[0426] As a result, the lead-out pin descent step can be performed when the final substrate 1 is being led out by the substrate processing apparatus or when the substrate processing apparatus is being maintained en route.

[0427] On the other hand, the substrate import step S100, the processing space formation step S200, the substrate processing step S300, the processing space release step S400, and the substrate export step S500 constitute a unit loop S10, which can be repeatedly executed multiple times. One loop corresponds to one substrate 1 and the loop is executed.

[0428] In addition, as another example, the substrate processing method of the present invention may also include a gate closing step, wherein the gate closing step closes the gate 111 by the gate valve 150 to seal the internal space S1 after the processing space forming step S200.

[0429] In addition, the substrate processing method of the present invention may include a gate opening step of opening the gate 111 through the gate valve 150 before the substrate introduction step S100.

[0430] In addition, the substrate processing method of the present invention may further include a gate opening step of opening the gate 111 through the gate valve 150 after the processing space release step S400.

[0431] In addition, the substrate processing method of the present invention may further include a gate closing step of closing the gate 111 by means of the gate valve 150 after the substrate export step S500.

[0432] The gate closing step can be a step of closing the gate 111 by the gate valve 150 to seal the internal space S1.

[0433] At this time, the gate closing step can be performed to seal the internal space after the processing space forming step S200. In this case, as another example, the gate closing step can of course be performed before the processing space forming step S200 and after the substrate introduction step S100.

[0434] That is, the substrate processing method of the present invention can selectively form a processing space S2 separately within the internal space S1 as needed, so the gate valve 111 can be closed separately from the formation of the processing space S2 by the gate valve 150.

[0435] That is, as needed, the gate 111 can be closed by the gate valve 150 through the gate space S2 formed by the inner cover 300.

[0436] On the other hand, in order to control the pressure of the internal space separately, a gate closing step of closing the gate 111 by the gate valve 150 can be performed, and this can be performed after the processing space forming step S200.

[0437] Alternatively, the gate closing step can be performed after the substrate export step S500 to close the gate 111. In this case, it can be omitted during the repeated substrate processing of multiple substrates 1, and can be performed only when the substrate processing is completed for the last substrate 1 or when the substrate processing device needs to be maintained.

[0438] The gate opening step can be the step of opening gate 111 through gate valve 150.

[0439] At this time, the gate opening step can be performed to open the internal space after the processing space release step S400. In this case, as another example, the gate closing step can of course be performed before the processing space release step S400 and after the substrate processing step S300.

[0440] Therefore, the gate opening step is performed before the substrate export step S500, and the substrate 1 that has completed substrate processing can be exported to the outside.

[0441] Alternatively, the gate opening step can be performed before the substrate introduction step S100 to open the gate 111. In this case, it can be omitted during the repeated substrate processing of multiple substrates 1, and can only be selectively performed when the substrate 1 is initially introduced or when the substrate processing device needs to be maintained.

[0442] The cleaning step may be a step in which, before the substrate 1 is introduced into the internal space S1 through the substrate introduction step S100, gas is supplied through the processing space S2 side while the inner cover 300 is raised, and gas is discharged through the non-processing space S3 side.

[0443] More specifically, the cleaning step may be a step of cleaning the internal space S1, including the processing space S2, which has undergone substrate processing, before the substrate 1 is introduced into the internal space through the substrate introduction step S100 and after the substrate 1 is exported from the internal space through the substrate export step S500.

[0444] At this time, the cleaning step can be performed by venting through the exhaust port (not shown) on the non-processing space S3 side, and cleaning gas is injected through the gas supply unit 400 on the processing space side, and then the purging gas can be discharged through the exhaust port of the non-processing space S3 via the processing space S2.

[0445] That is, the gas mentioned at this time can refer to various gases, such as process gases for substrate processing, cleaning gases for cleaning the inside of the equipment, and purging gases for purging the internal space S1. The cleaning gas is injected through the gas supply unit 400 on the processing space side, and the purging gas can be discharged through the exhaust port of the non-processing space S3.

[0446] Accordingly, the cleaning step guides the cleaning gas from the processing space S2 to the non-processing space S3, thereby enabling a more thorough cleaning of the internal space S1, especially the area corresponding to the processing space S2.

[0447] The above is only a partial description of the preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be limited to the embodiments. The technical ideas and fundamental technical ideas of the present invention described above are all included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: A process chamber (100) includes a chamber body (110) and a top cover (140). The chamber body (110) is open at the top, and a groove (130) is formed on the center side of the bottom surface (120). It also includes a gate (111) for entering and exiting the substrate (1) on one side. The top cover (140) is attached to the upper part of the chamber body (110) to form an internal space (S1). A substrate support (200) is formed in a shape corresponding to the setting groove (130) and is inserted into the setting groove (130) of the chamber body (110), and a substrate (1) is placed on it; The inner cover (300) is movably disposed in the internal space (S1). By descending, a portion of it is closely attached to the bottom surface (120) adjacent to the set groove (130), thereby forming a sealed processing space (S2) with the substrate support (200) inside. A gas supply unit (400) is disposed adjacent to the substrate support (200) between the contact position between the inner cover (300) and the bottom surface (120) and the edge of the substrate support (200), thereby communicating with the processing space (S2), and supplying process gas received from the outside to the processing space (S2) through a gas supply channel (420) formed through the lower surface of the process chamber (100); An inner cover drive unit (600) is disposed through the top cover (140) to drive the inner cover unit (300) to move up and down. The gas supply unit (400) includes: The gas injection section (430) forms a first diffusion space (S5) for diffusing the process gas; and Multiple gas injection holes (440) are formed in the gas injection section (430) to inject the process gas toward the processing space (S2). It also includes a gas diffusion section (1000) disposed between the gas supply section (400) and the process chamber (100), forming a second diffusion space (S6) to diffuse the process gas delivered to the gas supply section (400). The gas injection unit (430) is disposed on the gas diffusion unit (1000) to form the first diffusion space (S5) together with the gas diffusion unit (1000). The gas diffusion section (1000) includes at least one gas delivery hole (1020), which is formed on the gas diffusion section (1000) to deliver the process gas from the second diffusion space (S6) to the first diffusion space (S5).

2. The substrate processing apparatus according to claim 1, characterized in that, The bottom surface (120) is configured to be higher than the substrate (1) placed on the substrate support (200).

3. The substrate processing apparatus according to claim 2, characterized in that, The substrate support portion (200) includes: A substrate support plate (210) on which the substrate (1) is placed and is formed in a circular shape on a plane; a substrate support column (220) through the bottom of the setting groove (130) to be connected to the substrate support plate (210). The groove (130) is formed in a shape corresponding to the substrate support plate (210) to minimize the remaining space other than the space where the substrate support plate (210) is set.

4. The substrate processing apparatus according to claim 1, characterized in that, The processing space (S2) is formed between a portion of the bottom surface of the inner cover (300) and the top surface connecting the gas supply section (400) and the substrate support section (200).

5. The substrate processing apparatus according to claim 1, characterized in that, The gas injection section (430) is configured in a ring shape and is disposed along the edge of the substrate support section (200).

6. The substrate processing apparatus according to claim 1, characterized in that, The process chamber (100) includes a gas supply channel (190). The gas supply channel (190) is disposed through the lower surface of the process chamber (100) to communicate with the first diffusion space (S5) and to transfer the process gas from the outside to the first diffusion space (S5). A first diffusion groove (431) is formed on the bottom surface of the gas injection section (430). The first diffusion groove (431) is connected to the gas supply channel (190) and is used for the first diffusion space (S5).

7. The substrate processing apparatus according to claim 1, characterized in that, The gas injection hole (440) is formed on the gas injection part (430).

8. The substrate processing apparatus according to claim 1, characterized in that, The bottom surface of the gas diffusion section (1000) forms a second diffusion groove (1010) to form the second diffusion space (S6) together with the process chamber (100).

9. The substrate processing apparatus according to claim 1, characterized in that, Also includes: A temperature adjustment unit (1100) is provided in the inner cover (300) to adjust the temperature of the substrate (1) located in the processing space (S2).

10. The substrate processing apparatus according to claim 9, characterized in that, The substrate support portion (200) includes: A substrate support plate (210) on which the substrate (1) is placed; a substrate support column (220) passing through the bottom of the setting groove (130) to connect with the substrate support plate (210); and an internal heater (230) disposed inside the substrate support plate (210).

11. The substrate processing apparatus according to claim 9, characterized in that, The temperature regulating unit (1100) includes: A temperature regulating plate (1110) is disposed in the inner cover (300) to heat or cool the substrate (1); a rod (1120) is connected to the temperature regulating plate (1110) through the top cover (140).

12. The substrate processing apparatus according to claim 11, characterized in that, The temperature regulating plate (1110) is disposed in the through opening (320), which is formed on the center side of the inner cover (300) corresponding to the substrate (1).

13. The substrate processing apparatus according to claim 12, characterized in that, The temperature regulating unit (1100) also includes a buffer plate (1130) which covers the through opening (320) on the underside of the inner cover (300).

14. The substrate processing apparatus according to claim 11, characterized in that, The temperature regulating plate (1110) includes at least two temperature regulating areas, which are distinct from each other on a plane and can adjust the temperature independently.

15. The substrate processing apparatus according to claim 9, characterized in that, Also includes: The control unit controls the heating or cooling of the temperature regulating unit (1100); The control unit controls the temperature regulation unit (1100) to maintain a constant temperature on the substrate (1) or the processing space (S2) during the voltage transformation process in the processing space (S2).

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