Substrate processing equipment and substrate processing methods

Abstract

This invention provides a substrate processing apparatus and a substrate processing method. The substrate processing method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and performing supercritical processing on the first substrate in the supercritical chamber; a static operation of keeping the supercritical chamber empty for a first time until the temperature in the supercritical chamber returns to a default temperature by opening the supercritical chamber after removing the first substrate from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and performing supercritical processing on the second substrate in the supercritical chamber.

Description

[0001] Cross-reference of related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0117641, filed with the Korean Intellectual Property Office on September 3, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method for processing a substrate using a supercritical fluid. Background Technology

[0004] Generally, semiconductor devices are manufactured from substrates (such as wafers). Specifically, semiconductor devices are manufactured by performing deposition, lithography, etching, and similar processes to form fine circuit patterns on the upper surface of the substrate.

[0005] Since various foreign objects adhere to the upper surface of the substrate on which circuit patterns are formed during the above processes, a cleaning process is performed between these processes to remove the foreign objects from the substrate.

[0006] Generally speaking, cleaning processes include chemical treatment to remove foreign matter from the substrate by supplying chemicals to the substrate, cleaning treatment to remove residual chemicals from the substrate by supplying deionized water to the substrate, and drying treatment to remove residual deionized water from the substrate.

[0007] Supercritical fluids are used for drying substrates. According to an example, after replacing the pure water on the substrate with an organic solvent, supercritical fluid is supplied to the upper surface of the substrate in a high-pressure chamber to dissolve any remaining organic solvent in the supercritical fluid, thereby removing the organic solvent from the substrate. When isopropanol (hereinafter referred to as "IPA") is used as the organic solvent, carbon dioxide (CO2), which has a relatively low critical temperature and critical pressure and is readily soluble in IPA, is used as the supercritical fluid.

[0008] The substrate is processed using a supercritical fluid as follows: When the substrate is loaded into a high-pressure chamber, supercritical carbon dioxide is supplied to pressurize the interior of the high-pressure chamber. The substrate is then processed with the supercritical fluid while the supply and venting of the high-pressure chamber are repeated. Finally, when the substrate processing is complete, the pressure is reduced by venting the high-pressure chamber.

[0009] However, when multiple substrates are processed sequentially with a high-temperature, high-pressure supercritical fluid, the temperature of the high-pressure chamber may become too high, which may adversely affect the supercritical processing of subsequent substrates. Summary of the Invention

[0010] This invention aims to provide a substrate processing apparatus and a method for preventing overheating of the supercritical chamber when continuously processing several substrates using a supercritical fluid.

[0011] The present invention also aims to provide a substrate processing apparatus and a method for processing several substrates under the same temperature conditions while continuously processing them using supercritical fluid.

[0012] The purpose of this invention is not limited thereto, and other unmentioned purposes will be clearly understood by those skilled in the art from the following description.

[0013] An exemplary embodiment of the present invention provides a substrate processing method, the substrate processing method comprising: a first supercritical processing operation of loading a first substrate into a supercritical chamber and performing supercritical processing on the first substrate in the supercritical chamber; a static operation of keeping the supercritical chamber empty for a first time until the temperature in the supercritical chamber returns to a default temperature by opening the supercritical chamber after removing the first substrate from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and performing supercritical processing on the second substrate in the supercritical chamber.

[0014] In an exemplary embodiment, the first time can be set based on the initial set temperature used to process the second substrate in the second supercritical processing operation.

[0015] In an exemplary embodiment, the second supercritical processing operation may include: a pressurization operation to pressurize the fluid by supplying the fluid at a first temperature into the supercritical chamber; and a processing operation to process the substrate using the fluid, wherein the initial set temperature may be set to a temperature equal to or lower than the first temperature.

[0016] In an exemplary embodiment, the substrate processing method may further include: a transfer operation prior to the first supercritical processing operation, transferring the first substrate, which has been liquid-treated in a liquid processing chamber, to the supercritical chamber, wherein a temperature correction operation to raise the temperature in the supercritical chamber may be performed when the transfer operation is delayed from a preset time.

[0017] In an exemplary embodiment, the temperature correction operation can be performed during the time it takes for the temperature inside the supercritical chamber to reach the initial set temperature.

[0018] In an exemplary embodiment, the temperature correction operation can be performed by supplying the fluid at the first temperature to the supercritical chamber.

[0019] In an exemplary implementation, the quiescent operation can be performed after the temperature correction operation.

[0020] Another exemplary embodiment of the present invention provides a substrate processing method, the substrate processing method comprising: liquid processing a substrate in a liquid processing chamber, then transferring the substrate to a high-pressure supercritical chamber, and performing supercritical processing on the substrate in the supercritical chamber, wherein when the transfer is delayed from a preset time, a temperature correction operation is performed to correct the internal temperature of the supercritical chamber, and the temperature correction operation is performed for a period of time for the internal temperature of the supercritical chamber to reach an initial set temperature for processing the substrate in the supercritical chamber.

[0021] In an exemplary implementation, the temperature correction operation can be performed by supplying a high-temperature fluid to the supercritical chamber.

[0022] In an exemplary embodiment, the interior of the supercritical chamber is cleaned using the high-temperature fluid during the temperature correction operation.

[0023] In an exemplary embodiment, the supercritical process may include: a pressurization operation of supplying a fluid at a first temperature to the supercritical chamber to pressurize the fluid; and a processing operation of processing the substrate using the fluid, wherein the initial set temperature may be set to a temperature equal to or lower than the first temperature.

[0024] In an exemplary embodiment, during the temperature correction operation, the fluid at the first temperature is supplied to the supercritical chamber.

[0025] In an exemplary embodiment, the supercritical process may include: a first supercritical process operation of loading a first substrate into a supercritical chamber and performing supercritical processing on the first substrate in the supercritical chamber; a static operation of keeping the supercritical chamber empty for a first time until the temperature in the supercritical chamber returns to a default temperature by opening the supercritical chamber after removing the first substrate from the supercritical chamber; and a second supercritical process operation of loading a second substrate into the supercritical chamber and performing supercritical processing on the second substrate in the supercritical chamber.

[0026] In an exemplary implementation, the quiescent operation can be performed after the temperature correction operation.

[0027] In an exemplary embodiment, the first time can be set based on the initial set temperature used to process the second substrate in the second supercritical processing operation.

[0028] Another exemplary embodiment of the present invention provides a substrate processing apparatus, comprising: a liquid processing chamber for liquid processing of a substrate therein; a supercritical chamber for supercritical processing of the substrate in an internal processing space; a transfer tool for transferring the substrate from the liquid processing chamber to the supercritical chamber; and a controller for controlling the liquid processing chamber, the supercritical chamber, and the transfer tool, wherein the supercritical chamber includes: a support unit for supporting the substrate in the processing space; a fluid supply unit for supplying fluid to the processing space; and a heating tool for heating the fluid, and when the time for the transfer tool to transfer the substrate from the liquid processing chamber to the supercritical chamber is delayed from a preset time, the controller controls the supercritical chamber to perform a temperature correction operation by supplying the high-temperature fluid to the processing space to raise the internal temperature of the supercritical chamber to a first temperature for a default time.

[0029] In an exemplary embodiment, the first temperature may be an initial set temperature for processing the substrate.

[0030] In an exemplary embodiment, the controller controls the supercritical chamber such that after a first substrate is loaded into the supercritical chamber and subjected to supercritical treatment in the supercritical chamber, the first substrate is removed from the supercritical chamber, and the supercritical chamber is then kept empty for a first time until the temperature in the supercritical chamber is reduced to the default temperature by opening the supercritical chamber, and then a second substrate is loaded into the supercritical chamber and subjected to supercritical treatment in the supercritical chamber.

[0031] In an exemplary embodiment, the first time can be set based on the initial set temperature used to process the second substrate in the second supercritical processing operation.

[0032] In an exemplary embodiment, the heating tool is located outside the housing.

[0033] According to an exemplary embodiment of the present invention, overheating of the supercritical chamber can be prevented when several substrates are continuously processed using a supercritical fluid.

[0034] According to an exemplary embodiment of the present invention, each substrate can be processed under the same temperature conditions while continuously processing several substrates using a supercritical fluid.

[0035] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0036] Figure 1 A top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0037] Figure 2 For illustrative purposes only Figure 1 A diagram of an exemplary implementation of a liquid handling chamber.

[0038] Figure 3 For illustrative purposes only Figure 1 A diagram of an exemplary implementation scheme for a supercritical chamber.

[0039] Figure 4 The diagram illustrates, for illustrative purposes, examples of a first fluid supply unit and a second fluid supply unit for supplying supercritical fluid according to an exemplary embodiment of the present invention.

[0040] Figure 5 A flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0041] Figure 6 This is an illustrative illustration of the pressurization operation. Figure 4 The diagram shows the state in which the first fluid supply unit supplies supercritical fluid in which organic solvent is dissolved to the process chamber.

[0042] Figure 7 This is an illustrative illustration of the processing operation. Figure 4 The diagram shows the state in which the second fluid supply unit supplies supercritical fluid in which the organic solvent is not dissolved to the process chamber.

[0043] Figure 8 To illustrate the process during exhaust operation Figure 4 The diagram shows the exhaust unit venting the process chamber.

[0044] Figure 9 The state of performing temperature correction operation according to an exemplary embodiment of the invention is shown.

[0045] Explanation of reference numerals in the attached figures

[0046] 10: Index module; 12: Loading port; 14: Index frame; 20: Processing module; 40: Controller; 80: Container; 92: First direction; 94: Second direction; 96: Third direction; 120: Indexing robot; 122: Hand; 140: Guide rail; 200: Buffer unit; 220: Buffer; 300: Transfer tool; 320: Transfer robot; 322: Hand; 340: Guide rail; 400: Liquid handling device; 410: Liquid handling chamber; 420: Cup-shaped piece; 422: First recovery container; 422a: First inlet; 424: Second recovery container; 424a: Second inlet; 426: Third recovery container; 426a: Third inlet; 440: Support unit; 442: Support plate ; 442a: Support pin; 442b: Holding pin; 444: Drive shaft; 446: Driver; 460: Liquid supply unit; 461: Arm; 462: First nozzle; 464: Second nozzle; 466: Third nozzle; 480: Lifting unit; 500: Supercritical device; 502: Processing space; 520: Supercritical chamber; 522: Upper outer shell; 524: Lower outer shell; 550: Exhaust line; 560: Fluid supply unit; 562: Main supply line; 564: Upper supply line; 566: Lower supply line; 580: Support unit; 590: Drive component; S10: First supercritical processing operation; S20: Stationary operation; S30: Second supercritical processing operation; W: Substrate; W1: Substrate; W2: Substrate. Detailed Implementation

[0047] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. These exemplary embodiments may be modified in various ways, and the scope of the invention should not be construed as limited to the following exemplary embodiments. These exemplary embodiments are provided to more fully explain the invention to those skilled in the art. Therefore, the shapes of the components in the drawings are enlarged to emphasize a clearer description.

[0048] Figure 1 A top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes. (Reference) Figure 1 The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller (not shown). According to an exemplary embodiment, the indexing module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged is referred to as a first direction 92, and when viewed from above, the direction perpendicular to the first direction 92 is referred to as a second direction 94, and the direction perpendicular to both the first direction 92 and the second direction 94 is referred to as a third direction 96.

[0049] The indexing module 10 transfers the substrate W from the container 80 containing the substrate W to the processing module 20, and accommodates the substrate W, which has been fully processed in the processing module 20, in the container 80. The longitudinal direction of the indexing module 10 is provided in the second direction 94. The indexing module 10 includes a loading port 12 and an indexing frame 14. Based on the indexing frame 14, the loading port 12 is positioned on the side opposite to the processing module 20. The container 80 containing the substrate W is placed on the loading port 12. Multiple loading ports 12 may be provided, and these multiple loading ports 12 may be arranged in the second direction 94.

[0050] An airtight container, such as a front-opening unified pod (FOUP), can be used as container 80. Container 80 can be placed on loading port 12 by a transport vehicle (not shown), such as a suspended transfer device, a suspended conveyor, or an automated guided vehicle, or by an operator.

[0051] An indexing robot 120 is mounted on an indexing frame 14. A guide rail 140 with its longitudinal direction being a second direction 94 is disposed within the indexing frame 14, and the indexing robot 120 is configured to move on the guide rail 140. The indexing robot 120 includes a hand 122 on which a substrate W is placed, and the hand 122 is configured to move back and forth, rotate about a third direction 96, and move in the third direction 96. A plurality of hands 122 are configured to be spaced apart from each other in the vertical direction and are capable of moving back and forth independently.

[0052] Processing module 20 includes a buffer unit 200, a transfer tool 300, a liquid processing device 400, and a supercritical device 500. The buffer unit 200 provides space for the substrate W loaded onto and removed from the processing module 20 to temporarily reside there. The liquid processing device 400 performs a liquid processing process by supplying liquid onto the substrate W. The supercritical device 500 performs a drying process to remove any remaining liquid from the substrate W. The transfer tool 300 transfers the substrate W between the buffer unit 200, the liquid processing device 400, and the supercritical device 500.

[0053] The longitudinal direction of the transfer tool 300 can be provided in the first direction 92. The buffer unit 200 can be disposed between the index module 10 and the transfer tool 300. The liquid processing device 400 and the supercritical device 500 can be disposed on one side of the transfer tool 300. The liquid processing device 400 and the transfer tool 300 can be disposed along the second direction 94. The supercritical device 500 and the transfer tool 300 can be disposed along the second direction 94. The buffer unit 200 can be positioned at one end of the transfer tool 300.

[0054] According to one example, a liquid handling device 400 is disposed on both sides of a transfer tool 300, and a supercritical device 500 is disposed on both sides of the transfer tool 300. The liquid handling device 400 can be disposed closer to the buffer unit 200 than the supercritical device 500. On one side of the transfer tool 300, the liquid handling device 400 can be arranged in an A×B configuration (where A and B are both natural numbers of 1 or greater than 1) in the first direction 92 and the third direction 96. Similarly, on one side of the transfer tool 300, the supercritical device 500 can be arranged in a C×D configuration (where C and D are both natural numbers of 1 or greater than 1) in the first direction 92 and the third direction 96. Unlike the above, only the liquid handling device 400 can be disposed on one side of the transfer tool 300, and only the supercritical device 500 can be disposed on the other side of the transfer tool 300.

[0055] The transfer tool 300 includes a transfer manipulator 320. A guide rail 340 with a longitudinal direction in a first direction 92 is disposed in the transfer tool 300, and the transfer manipulator 320 is configured to move on the guide rail 340. The transfer manipulator 320 includes a hand 322 on which the substrate W is placed, and the hand 322 is configured to move back and forth, rotate about a third axis 96, and move in the third axis 96. A plurality of hands 322 are configured to be spaced apart from each other in the vertical direction, and these hands 322 are independently movable back and forth from each other.

[0056] The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffers 220 can be arranged to be spaced apart from each other in a third direction 96. The front and rear of the buffer unit 200 are open. The front is the side facing the index module 10, and the rear is the side facing the transfer tool 300. The indexing robot 120 can approach the buffer unit 200 via the front, and the transfer robot 320 can approach the buffer unit 200 via the rear.

[0057] Figure 2 For illustrative purposes only Figure 1 A diagram illustrating an exemplary embodiment of the liquid handling apparatus 400. (Reference) Figure 2 The liquid handling apparatus 400 includes a liquid handling chamber 410, a cup-shaped component 420, a support unit 440, a liquid supply unit 460, a lifting unit 480, and a controller 40. The controller 40 controls the operation of the liquid supply unit 460, the support unit 440, and the lifting unit 480. The liquid handling chamber 410 is configured to be substantially cuboid in shape. The cup-shaped component 420, the support unit 440, and the liquid supply unit 460 are disposed within the liquid handling chamber 410.

[0058] The cup-shaped member 420 has a processing space with an open top, within which liquid is processed on the substrate W. A support unit 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies liquid to the substrate W supported by the support unit 440. Liquid can be provided in various types and can be supplied to the substrate W sequentially. A lifting unit 480 adjusts the relative height between the cup-shaped member 420 and the support unit 440.

[0059] According to one example, the cup-shaped member 420 includes a plurality of recycling containers (422, 424, and 426). Each of the recycling containers (422, 424, and 426) has a recycling space for recycling liquid used in substrate processing. Each of the recycling containers (422, 424, and 426) is arranged in an annular shape to surround the support unit 440. During the liquid processing process, pretreatment liquid scattered by the rotation of the substrate W is introduced into the recycling space through inlets (422a, 424a, and 426a) of the recycling containers (422, 424, and 426), respectively. According to one example, the cup-shaped member 420 includes a first recycling container 422, a second recycling container 424, and a third recycling container 426. The first recycling container 422 is arranged to surround the support unit 440, the second recycling container 424 is arranged to surround the first recycling container 422, and the third recycling container 426 is arranged to surround the second recycling container 424. The second inlet 424a through which the liquid is introduced into the second recovery container 424 can be positioned above the first inlet 422a through which the liquid is introduced into the first recovery container 422, and the third inlet 426a through which the liquid is introduced into the third recovery container 426 can be positioned above the second inlet 424a.

[0060] The support unit 440 includes a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 may be substantially circular and may have a diameter larger than that of the substrate W. A support pin 442a supporting the rear surface of the substrate W is disposed at the center of the support plate 442, and the upper end of the support pin 442a is configured to protrude from the support plate 442 so that the substrate W is spaced apart from the support plate 442 by a predetermined distance. A retaining pin 442b is disposed at the edge of the support plate 442.

[0061] The retaining pin 442b is configured to protrude upward from the support plate 442 and support the lateral portion of the substrate W, such that the substrate W does not separate from the support unit 440 when the substrate W rotates. The drive shaft 444, driven by the driver 446, is connected to the center of the bottom surface of the substrate W and rotates the support plate 442 based on its central axis.

[0062] According to one example, the liquid supply unit 460 includes a first nozzle 462, a second nozzle 464, and a third nozzle 466. The first nozzle 462 supplies a first liquid to the substrate W. The first liquid may be a liquid that removes residual film or foreign matter on the substrate W. The second nozzle 464 supplies a second liquid to the substrate W. The second liquid may be a liquid that is readily soluble in the third liquid. For example, the second liquid may be a liquid that is more readily soluble in the third liquid than the first liquid. The second liquid may be a liquid that neutralizes the first liquid supplied to the substrate W. Alternatively, the second liquid may be a liquid that neutralizes the first solution and is simultaneously more readily soluble in the third solution than the first solution.

[0063] According to one example, the second liquid can be water. A third nozzle 466 supplies a third liquid to the substrate W. The third liquid can be a liquid readily soluble in the supercritical fluid used in the supercritical device 500. For example, the third liquid can be a liquid more readily soluble in the supercritical fluid used in the supercritical device 500 than the second liquid. According to one example, the third liquid can be an organic solvent. The organic solvent can be isopropanol (IPA). For example, the supercritical fluid can be carbon dioxide.

[0064] The first nozzle 462, the second nozzle 464, and the third nozzle 466 can be supported by different arms 461, and these arms 461 can move independently. Depending on the situation, the first nozzle 462, the second nozzle 464, and the third nozzle 466 can be mounted on the same arm and move simultaneously.

[0065] The lifting unit 480 moves the cup-shaped member 420 vertically. This vertical movement of the cup-shaped member 420 changes the relative height between it and the substrate W. Therefore, since the recovery containers (422, 424, and 426) for recovering the pre-treated liquid vary depending on the type of liquid supplied to the substrate W, the liquid can be separated and collected. Contrary to the description, the cup-shaped member 420 can be fixedly mounted, and the lifting unit 480 can move the support unit 440 vertically.

[0066] Figure 3 For illustrative purposes only Figure 1 A figure shows an exemplary embodiment of the supercritical device 500. According to the exemplary embodiment, the supercritical device 500 removes liquid from a substrate W using a supercritical fluid. According to the exemplary embodiment, the liquid on the substrate W can be IPA. The supercritical device 500 removes IPA from the substrate by supplying the supercritical fluid to the substrate and dissolving the IPA on the substrate W in the supercritical fluid. In one example, the supercritical fluid is carbon dioxide in a supercritical state.

[0067] The supercritical device 500 includes a supercritical chamber 520, a fluid supply unit 560, a support unit 580, a heating tool (not shown), and an exhaust line 550.

[0068] The supercritical chamber 520 provides a processing space 502 in which supercritical processes are performed. The supercritical chamber 520 includes an upper outer shell 522 and a lower outer shell 524, which are combined with each other to provide the processing space 502. The upper outer shell 522 is disposed on top of the lower outer shell 524.

[0069] In one example, the upper housing 522 is fixed in position, while the lower housing 524 can be raised and lowered by a drive member 590 (such as a cylinder). Depending on the situation, the lower housing 524 is fixed in position, while the upper housing can be raised and lowered by a drive member (such as a cylinder). When the lower housing 524 is spaced apart from the upper housing 522, the processing space 502 is opened, and the substrate W is loaded or unloaded at this time.

[0070] During this process, the lower housing 524 is in close contact with the upper housing 522, thereby sealing the processing space 502 away from the outside.

[0071] The support unit 580 supports the substrate W in the processing space 502 of the supercritical chamber 520. The substrate W loaded into the processing space 502 of the supercritical chamber 520 is placed on the support unit 580. According to one example, the substrate W is supported by the support unit 580 such that the patterned surface faces upward.

[0072] The fluid supply unit 560 supplies supercritical fluid for processing the substrate to the processing space 502 of the supercritical chamber 520. According to one example, the fluid supply unit 560 includes a main supply line 562, an upper supply line 564, and a lower supply line 566. The upper supply line 564 and the lower supply line 566 branch from the main supply line 562. The upper supply line 564 may be connected to the center of the upper housing 522. In one example, the lower supply line 566 may be connected to the lower housing 524. Furthermore, an exhaust line is connected to the lower housing 524. The fluid in the processing space 502 of the supercritical chamber 520 is discharged to the outside of the supercritical chamber 520 via an exhaust line.

[0073] A heating device (not shown) heats the fluid supplied to the supercritical chamber 520. In one example, the heating device (not shown) is configured as a heater installed in at least one of the main supply line 562, the upper supply line 564, and the lower supply line 566. Alternatively, the heating device (not shown) may be a heater installed on the inner wall of the supercritical chamber 520.

[0074] A heating device (not shown) heats the supercritical fluid supplied to the processing space 502 to bring the fluid into a supercritical state. In one example, the heating device (not shown) is configured as a heater installed in the upper supply line 564 and the lower supply line 566 to heat the fluid outside the processing space 502 to a first temperature and supply the heated fluid to the processing space 502. In one example, the first temperature is set to be below the critical point of the fluid. The fluid at the first temperature pressurizes the processing space 502 for a predetermined time period and is then converted to a supercritical state.

[0075] In the following text, reference will be made to Figures 4 to 8 The substrate processing method of the present invention is described. Figure 4 A flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention is provided. A controller controls a substrate processing apparatus to perform the substrate processing method of the present invention. In one example, the fluid supplied to the processing space 502 is carbon dioxide.

[0076] refer to Figure 4 The substrate processing method of the present invention includes a first supercritical processing operation S10, a static operation S20, and a second supercritical processing operation S30. In the first supercritical processing operation S10, as... Figure 5 As shown, the first substrate W1 is loaded into the supercritical chamber 520 and supercritical treatment is performed on the first substrate W1 in the supercritical chamber 520. Then, as... Figure 6 As shown, in the static operation S20, after the first substrate W1 is removed from the supercritical chamber 520, the supercritical chamber 520 is opened and kept empty for a first time until the temperature in the supercritical chamber 520 reaches the default temperature. When the static operation S20 is completed, as shown... Figure 7 As shown, in the second supercritical processing operation S30, the second substrate W2 is loaded into the supercritical chamber 520, and supercritical processing is performed on the second substrate W2 in the supercritical chamber 520. For ease of explanation, only the first supercritical processing operation S10 and the second supercritical processing operation S30 are described, but supercritical processing can be performed sequentially on multiple substrates corresponding to two or more substrates in the supercritical chamber 520, and a static operation S20 can be included between these supercritical processing operations.

[0077] In one example, each supercritical processing operation includes a pressurization operation and a processing operation. In the pressurization operation, carbon dioxide at a first temperature is supplied to the processing space 502 to pressurize the processing space 502. Pressurization is performed until the critical pressure at which carbon dioxide becomes a supercritical fluid is reached inside the processing space 502 or higher. Then, in the processing operation, the substrate is processed using the supercritical carbon dioxide.

[0078] Figure 8 A schedule of time points T1 and T2 for performing static operations S20 (T1, T2) according to an exemplary embodiment of the present invention is shown. In one example, several substrates are sequentially subjected to supercritical processing in a supercritical chamber 520, and each substrate is subjected to supercritical processing under the same processing conditions. However, when the substrates are processed by repeatedly supplying high-temperature carbon dioxide to the processing space 502, the processing space 502 may unnecessarily overheat. To prevent overheating, in the present invention, a static operation S20 is provided between the first supercritical processing operation S10 and the second supercritical processing operation S30. In the static operation S20, the supercritical chamber 520, which is heated in the first supercritical processing operation S10, is naturally cooled to prevent the supercritical chamber 520 from overheating.

[0079] In one example, the static operation S20 is performed for a preset time. In each supercritical processing operation and the static operation S20, the static operation S20 is performed for a predetermined time without requiring separate measurement of the temperature inside or outside the supercritical chamber 520. Furthermore, when the substrate is removed from the processing space 502 after the first supercritical processing operation S10 by opening and keeping the supercritical chamber 520 open, data regarding the relationship between time and the temperature drop inside the supercritical chamber 520 is stored in advance. Based on this data, the time for performing the static operation S20 is set. In one example, the first time for performing the static operation S20 can be set based on the initial set temperature used to process the second substrate W2 in the second supercritical processing operation S30. For example, the initial set temperature is the initial temperature in the chamber required for supercritical processing of each substrate. In one example, the initial set temperature can be set to be equal to or lower than the temperature of the fluid supplied to the processing space 502 during the pressurization operation. In other words, during the static operation S20, the internal temperature of the supercritical chamber 520 is reduced to a first temperature or a temperature lower than the first temperature, and during the pressurized operation, carbon dioxide at the first temperature can be supplied to the processing space 502. Because the internal temperature of the supercritical chamber 520 is reduced to a temperature suitable for processing subsequent substrates or lower, problems caused by overheating of the processing space 502 during the processing of subsequent substrates can be prevented. Furthermore, since each substrate can be processed at the same processing temperature, processing results under the same conditions can be obtained.

[0080] However, even if the time for inputting the substrate into the supercritical chamber 520 is adjusted during supercritical processing, if the substrate to be transferred to the supercritical chamber 520 after the static operation S20 is completed does not arrive at the supercritical chamber 520 in time, the subsequent substrate cannot be supercritically processed at the appropriate time. In this case, the temperature of the processing space 502 may be too low to affect the process. To prevent this, the present invention includes a temperature correction operation.

[0081] In one example, the substrate is liquid-treated in a liquid treatment chamber 400 before undergoing supercritical treatment, and a transfer tool 300 transfers the substrate from the liquid treatment chamber 400 to the supercritical chamber 520. However, there may be cases where the substrate cannot be transferred to the supercritical chamber 520 due to problems in the liquid treatment chamber 400 or the transfer tool 300. When the transfer of the substrate is delayed due to the passage of a preset transfer time, the temperature of the processing space 502 may be excessively lowered, necessitating the execution of a temperature correction operation.

[0082] Figure 9 The illustration shows the state in which a temperature correction operation is performed according to an exemplary embodiment of the invention. After performing the first supercritical processing operation S10, a resting operation S20 is performed for a preset time. If the second substrate W2 is not placed in the supercritical chamber 520 within the preset time after performing the resting operation S20, the temperature correction operation is performed. In one example, the temperature correction operation may be performed for a period of time during which the temperature inside the supercritical chamber 520 becomes an initial set temperature. For example, the initial set temperature is the initial temperature in the chamber required for supercritical processing of each substrate.

[0083] In one example, a temperature correction operation can be performed by supplying a fluid at a first temperature to the supercritical chamber 520. During the temperature correction operation, as in the pressurization operation, carbon dioxide at the first temperature can be supplied to the processing space 502 via a fluid supply unit. In an exemplary embodiment, the interior of the supercritical chamber 520 can be cleaned with a high-temperature fluid during the temperature correction operation. During the temperature correction operation, as in the pressurization operation, the temperature of the processing space 502 is advantageously adjusted to a suitable temperature for processing subsequent substrates as carbon dioxide at the first temperature is supplied to the processing space 502.

[0084] In one example, a temperature correction operation can be performed without measuring the temperature inside or outside the supercritical chamber 520, similar to the static operation S20. For instance, when a fluid at a first temperature is supplied to the processing space 502, data regarding the relationship between time and the temperature rise in the supercritical chamber 520 is stored in advance. Then, based on this data, the time for performing the temperature correction operation is set.

[0085] In an exemplary embodiment, a static operation S20 can be performed after the temperature correction operation. For example, the static operation S20 can be performed to prevent the processing space 502 from overheating, even when the substrate is not yet ready to be loaded into the supercritical chamber 520 while the temperature correction operation is being performed.

[0086] According to an exemplary embodiment of the invention, overheating or overcooling of the temperature inside the supercritical chamber 520 can be prevented.

[0087] Furthermore, according to an exemplary embodiment of the present invention, when several substrates are processed sequentially in a supercritical chamber 520, each substrate can be processed at the same temperature.

[0088] In the above example, the operation was described in the absence of a means for measuring the temperature inside or outside the supercritical chamber 520. However, unlike this, the temperature inside or outside the supercritical chamber 520 can be measured, and the operation can be performed based on the measurement results.

[0089] The above detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or corrections can be made to the content within the scope of the inventive concept disclosed herein, the equivalent scope of this disclosure, and / or the skill or knowledge in the relevant technical field. The exemplary embodiments describe the optimal state for realizing the technical spirit of the invention, and various desired changes can be made to the specific application areas and uses of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Furthermore, the appended claims should be understood to include other exemplary embodiments.

Claims

1. A substrate processing method, the substrate processing method comprising the following steps: The first supercritical processing operation involves loading a first substrate into a supercritical chamber and performing supercritical processing on the first substrate in the supercritical chamber. A static operation is performed in which the supercritical chamber remains empty for a first time until the temperature in the supercritical chamber is returned to the default temperature by opening the supercritical chamber after the first substrate is removed from the supercritical chamber. as well as The second supercritical processing operation involves loading the second substrate into the supercritical chamber and performing supercritical processing on the second substrate in the supercritical chamber. The substrate processing method further includes the following steps: A transfer operation, performed prior to the first supercritical processing operation, involves transferring the first substrate, which has undergone liquid treatment in the liquid processing chamber, to the supercritical chamber. When the transfer operation is delayed from a preset time, a temperature correction operation is performed to raise the temperature in the supercritical chamber to prevent the temperature in the supercritical chamber from decreasing and affecting the supercritical process.

2. The substrate processing method according to claim 1, wherein the first time is set based on an initial set temperature for processing the second substrate in the second supercritical processing operation.

3. The substrate processing method according to claim 2, wherein the second supercritical processing operation includes: The pressurization operation is performed by pressurizing the fluid by supplying the fluid at a first temperature into the supercritical chamber; as well as The processing operation utilizes the fluid to process the second substrate, and The initial set temperature is set to be equal to or lower than the first temperature.

4. The substrate processing method according to claim 3, wherein the temperature correction operation is performed during the time period during which the temperature inside the supercritical chamber reaches the initial set temperature.

5. The substrate processing method according to claim 3, wherein the temperature correction operation is performed by supplying the fluid at the first temperature to the supercritical chamber.

6. The substrate processing method according to claim 4 or 5, wherein the static operation is performed after the temperature correction operation.

7. A substrate processing method, the substrate processing method comprising the following steps: The substrate is subjected to liquid treatment in a liquid treatment chamber, then the substrate is transferred to a high-pressure supercritical chamber, and then subjected to supercritical treatment in the supercritical chamber. When the transfer is delayed by a preset time, a temperature correction operation is performed to raise the temperature inside the supercritical chamber, preventing the temperature inside the supercritical chamber from decreasing and affecting the supercritical process. The temperature correction operation is performed for a period of time during which the temperature inside the supercritical chamber reaches the initial set temperature for processing the substrate in the supercritical chamber.

8. The substrate processing method according to claim 7, wherein the temperature correction operation is performed by supplying a high-temperature fluid to the supercritical chamber.

9. The substrate processing method according to claim 8, wherein in the temperature correction operation, the interior of the supercritical chamber is cleaned using the high-temperature fluid.

10. The substrate processing method according to any one of claims 7 to 9, wherein the supercritical processing comprises: A pressurization operation is performed by supplying a fluid at a first temperature to the supercritical chamber to pressurize the fluid. as well as The processing operation of the substrate using the fluid, and The initial set temperature is set to be equal to or lower than the first temperature.

11. The substrate processing method according to claim 10, wherein in the temperature correction operation, the fluid at the first temperature is supplied to the supercritical chamber.

12. The substrate processing method according to claim 10, wherein the supercritical processing includes: A first supercritical processing operation is performed, wherein a first substrate is loaded into the supercritical chamber and the first substrate is supercritically processed in the supercritical chamber. A static operation is performed in which the supercritical chamber remains empty for a first time until the temperature in the supercritical chamber is returned to the default temperature by opening the supercritical chamber after the first substrate is removed from the supercritical chamber. as well as The second supercritical processing operation involves loading the second substrate into the supercritical chamber and processing the second substrate in the supercritical chamber using supercritical methods.

13. The substrate processing method according to claim 12, wherein the static operation is performed after the temperature correction operation.

14. The substrate processing method according to claim 13, wherein the first time is set based on an initial set temperature for processing the second substrate in the second supercritical processing operation.

15. A substrate processing apparatus, the substrate processing apparatus comprising: A liquid processing chamber for performing liquid processing on the substrate inside it; A supercritical chamber for performing supercritical processing on the substrate in an internal processing space; A transfer tool for transferring the substrate in the liquid processing chamber to the supercritical chamber; as well as The controller is used to control the liquid processing chamber, the supercritical chamber, and the transfer tool. The supercritical chamber includes: A support unit for supporting the substrate in the processing space; A housing, the housing serving to provide the processing space; A fluid supply unit, wherein the fluid supply unit is used to supply fluid to the processing space; and A heating tool for heating the fluid, and When the time for the transfer tool to transfer the substrate from the liquid processing chamber to the supercritical chamber is delayed from a preset time, the controller controls the supercritical chamber to perform a temperature correction operation for a default time. The temperature correction operation raises the internal temperature of the supercritical chamber to a first temperature by supplying high-temperature fluid to the processing space, preventing the internal temperature of the supercritical chamber from dropping and affecting the supercritical processing.

16. The substrate processing apparatus of claim 15, wherein the first temperature is an initial set temperature for processing the substrate.

17. The substrate processing apparatus of claim 15, wherein the controller controls the supercritical chamber such that after loading a first substrate into the supercritical chamber and supercritically processing the first substrate in the supercritical chamber, the first substrate is removed from the supercritical chamber, the supercritical chamber is kept empty for a first time until the temperature in the supercritical chamber is reduced to a default temperature by opening the supercritical chamber, and a second substrate is loaded into the supercritical chamber and supercritically processed in the supercritical chamber.

18. The substrate processing apparatus of claim 17, wherein the first time is set based on an initial set temperature for processing the second substrate.

19. The substrate processing apparatus according to any one of claims 15 to 18, wherein the heating tool is disposed outside the housing.

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