Cooling structure of radio frequency link and processing equipment of semiconductor device

Abstract

The application provides a cooling structure of a radio frequency link rod and a processing equipment of a semiconductor device. The cooling structure of the radio frequency link rod comprises a heat-conducting base, a through hole is arranged in the middle of the heat-conducting base, the radio frequency link rod passes through the heat-conducting base through the through hole to connect a radio frequency circuit and a wafer tray; a heat-conducting ceramic part is arranged on the heat-conducting base to realize heat conduction and electrical isolation between the radio frequency link rod and the heat-conducting base; and a heat-conducting connecting part is connected with the first end of the radio frequency link rod and the second end of the heat-conducting ceramic part to conduct the heat of the radio frequency link rod to the heat-conducting base through the heat-conducting ceramic part.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a cooling structure for a radio frequency link and a semiconductor device processing equipment. Background Technology

[0002] In the semiconductor manufacturing industry, RF connectors are crucial for semiconductor processing. Current RF connectors in this field oxidize under high-temperature environments and high-power RF currents, increasing contact resistance. Due to the use of an electrostatic chuck, the connector cannot be directly grounded; therefore, it cannot be directly grounded via a thermally conductive metal. Furthermore, when the wafer tray is used as a power electrode, it cannot be directly grounded. Moreover, when the heating plate temperature is high, the heat conducted to the connector leads to a high temperature for the RF connector, such as 150-250°C. The RF current on the connector also generates heat, and this heat increases with increasing power, with currents reaching up to 50A or even higher. Furthermore, due to contact resistance at the connection point, the heat generated, Q = I²*R, will be even higher. Therefore, existing RF connectors in this technology will further heat up and oxidize during use, affecting the stability of the semiconductor manufacturing process and causing the connectors and connectors to blacken and stick together.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a cooling structure for radio frequency (RF) links, which can conduct away the heat at the bottom of the link while isolating the radio frequency, and prevent the link from being stressed during temperature changes in the heat conduction connection process, so as to avoid the link from heating up and oxidizing, structural deformation and connection changes, thereby improving the stability and reliability of the RF link. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, this invention provides a cooling structure for an RF connector and a semiconductor device processing device. This structure can conduct heat away from the bottom of the connector while isolating the RF circuit, and prevents the connector from being stressed during temperature changes during the thermally conductive connection process. This avoids heating, oxidation, structural deformation, and connection alterations, thereby improving the stability and reliability of the RF connector.

[0006] Specifically, the cooling structure for the radio frequency link provided according to the first aspect of the present invention includes:

[0007] A thermally conductive base has a through hole in its middle, through which the RF connecting rod passes to the thermally conductive base to connect the RF circuit and the wafer tray; a thermally conductive ceramic part is disposed on the thermally conductive base to realize thermal conduction and electrical isolation between the RF connecting rod and the thermally conductive base; and a thermally conductive connection part has a first end connected to the RF connecting rod and a second end connected to the thermally conductive ceramic part to conduct the heat of the RF connecting rod to the thermally conductive base via the thermally conductive ceramic part.

[0008] Furthermore, in some embodiments of the present invention, the cooling structure further includes a water cooling system, wherein the water cooling system is disposed inside the heat-conducting base, or the water cooling system is disposed outside the heat-conducting base and connected to the heat-conducting base via heat transfer.

[0009] Furthermore, in some embodiments of the present invention, the thermally conductive connection includes a heat-conducting tape, wherein a first end of the heat-conducting tape is connected to the radio frequency link in a surface-to-surface contact manner, and a second end of the heat-conducting tape is connected to the thermally conductive ceramic part in a surface-to-surface contact manner.

[0010] Furthermore, in some embodiments of the present invention, the first end of the heat-conducting tape is connected to the radio frequency link via a first thermally conductive medium, and its second end is connected to the thermally conductive ceramic part via a second thermally conductive medium.

[0011] Furthermore, in some embodiments of the present invention, a first end of the heat-conducting tape surrounds at least a portion of the radio frequency link to connect the radio frequency link.

[0012] Furthermore, in some embodiments of the present invention, the heat-conducting tape is made of a flexible material.

[0013] Furthermore, in some embodiments of the present invention, the thermally conductive ceramic part is embedded inside the thermally conductive base, and the second end of the thermally conductive connection part extends into the thermally conductive base to connect the thermally conductive ceramic part.

[0014] Furthermore, in some embodiments of the present invention, the thickness of the thermally conductive ceramic part is greater than a preset thickness, wherein the preset thickness is determined based on the upper limit of the parasitic capacitance value.

[0015] Furthermore, the semiconductor device processing apparatus provided according to the second aspect of the present invention includes: a wafer tray for carrying a wafer of a semiconductor device; a radio frequency link having a first end connected to a radio frequency circuit and a second end connected to the wafer tray for providing a radio frequency electric field to the wafer; and a cooling structure for the radio frequency link as described above for absorbing the heat of the radio frequency link and achieving electrical isolation between the radio frequency link and ground.

[0016] Furthermore, in some embodiments of the present invention, the wafer tray is selected from an electrostatic chuck or a heating tray. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of a semiconductor device processing apparatus provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of a cooling structure for a radio frequency link provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic diagram of the connection structure between the heat conductor and the connecting rod provided according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic diagram of the connection structure between the heat conductor and the connecting rod provided according to some embodiments of the present invention is shown.

[0022] Figure label:

[0023] 11. Radio frequency linkage;

[0024] 12. Thermally conductive base;

[0025] 13. Ground or radio frequency power supply;

[0026] 131 Inductor;

[0027] 132 capacitors;

[0028] 133 First Branch Road;

[0029] 134 Second Branch Road;

[0030] 14. Wafer trays;

[0031] 15. Electrostatic adsorption tray;

[0032] 16. Electrostatic adsorption tray;

[0033] 21. Thermally conductive base;

[0034] 22. Thermally conductive ceramic component;

[0035] 23 Thermally conductive connection parts;

[0036] 231. Conducting heat zone;

[0037] 24 RF linkages;

[0038] 31. Conducting heat zone;

[0039] 32 screws;

[0040] 33. Radio frequency linkage;

[0041] 41. Conducting heat zone;

[0042] 42 Screws;

[0043] 43. Radio frequency linkage. Detailed Implementation

[0044] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0045] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0046] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0047] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0048] As mentioned above, RF connectors are crucial for semiconductor processing. Current RF connectors in the field oxidize under high-temperature environments and high-power RF currents, increasing contact resistance. Due to the electrostatic chuck, the connector cannot be directly grounded; therefore, it cannot be directly grounded via a thermally conductive metal. Furthermore, when the wafer tray is used as a power electrode, it cannot be directly grounded. Moreover, when the heating plate temperature is high, the heat conducted to the connector leads to a high RF connector temperature, for example, 150-250°C. The RF current on the connector also generates heat, which increases with power, reaching up to 50A or even higher. Furthermore, due to contact resistance at the connection point, the heat generated, Q = I²*R, will be even higher. Therefore, existing RF connectors will further heat up and oxidize during use, affecting the stability of the semiconductor processing and causing the connector and connector to blacken and stick together.

[0049] To overcome the aforementioned deficiencies in the prior art, this invention provides a cooling structure for an RF connector and a semiconductor device processing device. This structure can conduct heat away from the bottom of the connector while isolating the RF circuit, and prevents the connector from being stressed during temperature changes during the thermally conductive connection process. This avoids heating, oxidation, structural deformation, and connection alterations, thereby improving the stability and reliability of the RF connector.

[0050] In some non-limiting embodiments, the cooling structure of the radio frequency link provided in the first aspect of the present invention can be configured in the processing equipment of the semiconductor device provided in the second aspect of the present invention.

[0051] First, please refer to Figure 1 , Figure 1 A schematic diagram of a semiconductor device processing apparatus provided according to some embodiments of the present invention is shown.

[0052] like Figure 1As shown, in some embodiments of the present invention, the semiconductor device processing equipment provided by the second aspect of the present invention includes a wafer tray 14, an RF link 11, and a cooling structure 12 for the RF link provided by the first aspect of the present invention. Here, the wafer tray 14 can be a ceramic tray for supporting the wafer during semiconductor processing. A metal grounding mesh 16 can be provided above the wafer tray for safety protection and shielding. When the temperature of the wafer tray 14 is high, heat will be conducted from below the surface of the wafer tray 14 along the RF link 11. The RF link 11 has a first end connected to an RF circuit 13 and a second end connected to the wafer tray, for providing an RF electric field to the wafer. The first branch of the RF circuit can be connected to an electrostatic adsorption tray 15 via an inductor 131. The second branch of the RF circuit 13 can be connected to ground or an RF power supply via a capacitor 132. The first branch and the second branch are connected in parallel.

[0053] Furthermore, in some embodiments of the present invention, the wafer tray 14 may be selected from an electrostatic chuck or a heating tray.

[0054] Furthermore, in some embodiments of the present invention, the radio frequency link 11 can be made of nickel, and the metal grounding grid 16 serving as an electrode can be made of molybdenum. The radio frequency link can be connected to the grounding grid by welding.

[0055] In other embodiments of the present invention, the radio frequency link 11 and the metal grounding grid 16 may be nickel-molybdenum alloy.

[0056] Please refer to the reference. Figure 1 as well as Figure 2 , Figure 2 A schematic diagram of a cooling structure for a radio frequency link provided according to some embodiments of the present invention is shown.

[0057] exist Figure 2 In the illustrated embodiment, the cooling structure of the RF link may include a thermally conductive base 21, a thermally conductive ceramic portion 22, and a thermally conductive connecting portion 23. The thermally conductive base 21 has a through-hole in its center. The RF link 24 can pass through the thermally conductive base 21 via this through-hole to connect the RF circuit 13 and the wafer tray 14. The thermally conductive ceramic portion can be disposed on the thermally conductive base 21 to achieve thermal conduction and electrical isolation between the RF link 24 and the thermally conductive base 21. The first end of the thermally conductive connecting portion 23 can be connected to the RF link 24. The second end of the thermally conductive connecting portion 23 can be connected to the thermally conductive ceramic portion 22 to conduct the heat from the RF link 24 to the thermally conductive base 21 via the thermally conductive ceramic portion 22. Thus, the cooling structure of the link can dissipate heat from the bottom of the link while isolating the RF circuit.

[0058] Optionally, the metal base itself is water-cooled or connected to a water-cooling block.

[0059] Furthermore, in some embodiments of the present invention, the cooling structure may further include a water-cooling system. Here, the water-cooling system may be disposed inside the heat-conducting base 21.

[0060] In other embodiments of the present invention, the water cooling system may also be located outside the heat-conducting base 21 and connected to the heat-conducting base 21 via heat transfer.

[0061] Furthermore, in some embodiments of the present invention, the aforementioned thermally conductive connection may include a thermally conductive tape 231. Here, the first end of the thermally conductive tape 231 may be connected to the aforementioned radio frequency link 24 in a surface contact manner, and its second end may be connected to the aforementioned thermally conductive ceramic part 22 in a surface contact manner. In this way, the surface contact method of the aforementioned thermally conductive tape can ensure good thermal conductivity, thereby realizing the thermal conductivity of the radio frequency link.

[0062] Furthermore, the first end of the aforementioned heat-conducting tape 231 can be connected to the aforementioned radio frequency link 24 via a first thermally conductive medium, while its second end can be connected to the aforementioned thermally conductive ceramic part 22 via a second thermally conductive medium.

[0063] Specifically, the first and second thermally conductive media mentioned above may include one or more of graphene pads and thermally conductive silicone to enhance or regulate thermal conductivity.

[0064] Please refer to Figure 3 . Figure 3 A schematic diagram of the connection structure between the heat conductor and the connecting rod provided according to some embodiments of the present invention is shown.

[0065] like Figure 3 As shown, the first end of the aforementioned heat conductor 31 can be fixed by screw 32 to wrap around at least a portion of the aforementioned radio frequency link 33, thereby connecting the aforementioned radio frequency link 33.

[0066] Those skilled in the art will understand that the screw 32 described above is merely a preferred embodiment provided by the present invention, intended to fix the radio frequency linkage 33, and not to limit the scope of protection of the present invention.

[0067] Please refer to Figure 4 , Figure 4 A schematic diagram of the connection structure between the heat conductor and the connecting rod provided according to some embodiments of the present invention is shown.

[0068] like Figure 4 As shown, in some other embodiments of the present invention, the first end of the aforementioned heat conductor 41 can be fixed by screws 42 to be directly connected to the aforementioned radio frequency linkage 43 face to face.

[0069] Preferably, the aforementioned heat-conducting tape can be made of a flexible material. Specifically, the flexible material includes, but is not limited to, flexible soft copper strip. This flexible soft copper strip can prevent deformation caused by temperature rises and falls from affecting the connection, and has a margin to prevent stress. In this way, the cooling structure of the aforementioned connecting rod can prevent the connecting rod from being stressed during temperature changes in the heat-conducting connection link, thereby avoiding heating and oxidation of the connecting rod, structural deformation, and changes in the connection.

[0070] Those skilled in the art will understand that the aforementioned heat-conducting tape 41 is merely a preferred embodiment provided by the present invention, intended to avoid deformation caused by temperature rise and fall affecting the connection, and to provide a margin to prevent stress, thereby ensuring that the cooling structure of the connecting rod can prevent the connecting rod from being subjected to stress during temperature changes in the heat-conducting connection link, so as to avoid the connecting rod heating up and oxidizing, structural deformation and connection changes, rather than being used to limit the scope of protection of the present invention.

[0071] In some embodiments of the present invention, the cooling structure described above can be fixed with at least two screws to the thermally conductive ceramic part 22 and the thermally conductive tape 231.

[0072] Furthermore, in some embodiments of the present invention, the thermally conductive ceramic portion 22 may be embedded inside the thermally conductive base 21. The second end of the thermally conductive connection portion 23 may extend into the thermally conductive base 21 to connect the thermally conductive ceramic portion 22.

[0073] In some embodiments of the present invention, the temperature of the heat-conducting base 21 can be controlled at 40-80°C to ensure that the temperature of the heat-conducting base 21 is lower than the temperature of the radio frequency link 24 so as to conduct away the temperature of the radio frequency link 24.

[0074] Furthermore, in some embodiments of the present invention, the thickness of the thermally conductive ceramic portion 22 may be greater than a preset thickness. Here, the preset thickness can be determined based on the upper limit of the parasitic capacitance value.

[0075] Specifically, the thickness of the aforementioned thermally conductive ceramic part 22 can be 1-10 mm to avoid parasitic capacitance.

[0076] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0077] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A cooling structure for a radio frequency linkage, characterized in that, include: A thermally conductive base has a through hole in its middle, through which the radio frequency connecting rod passes to the thermally conductive base to connect the radio frequency circuit and the wafer tray; A thermally conductive ceramic part is disposed on the thermally conductive base to realize thermal conduction and electrical isolation between the radio frequency connecting rod and the thermally conductive base; as well as The thermally conductive connection includes a heat-conducting tape made of a flexible material, the first end of which is connected to the radio frequency link in a surface-contact manner, and the second end of which is connected to the thermally conductive ceramic part in a surface-contact manner, for conducting the heat of the radio frequency link to the thermally conductive base via the thermally conductive ceramic part.

2. The cooling structure as described in claim 1, characterized in that, It also includes a water cooling system, wherein the water cooling system is disposed inside the heat-conducting base, or The water cooling system is located outside the heat-conducting base and is connected to the heat-conducting base via heat transfer.

3. The cooling structure as described in claim 1, characterized in that, The first end of the heat-conducting tape is connected to the radio frequency link via a first thermally conductive medium, and its second end is connected to the thermally conductive ceramic part via a second thermally conductive medium.

4. The cooling structure as described in claim 1, characterized in that, The first end of the heat-conducting tape surrounds at least a portion of the radio frequency link to connect the radio frequency link.

5. The cooling structure as described in claim 1, characterized in that, The thermally conductive ceramic part is embedded inside the thermally conductive base, and the second end of the thermally conductive connection part extends into the thermally conductive base to connect the thermally conductive ceramic part.

6. The cooling structure as described in claim 1, characterized in that, The thickness of the thermally conductive ceramic part is greater than a preset thickness, wherein the preset thickness is determined based on the upper limit of the parasitic capacitance value.

7. A semiconductor device processing apparatus, characterized in that, include: Wafer trays are used to hold semiconductor device wafers. The radio frequency linkage has a first end connected to the radio frequency circuit and a second end connected to the wafer tray, for providing a radio frequency electric field to the wafer; as well as The cooling structure of the RF link as described in any one of claims 1 to 6 is used to absorb the heat of the RF link and to achieve electrical isolation between the RF link and the ground terminal.

8. The processing equipment as described in claim 7, characterized in that, The wafer tray is selected from an electrostatic chuck or a heating tray.

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