A mass transfer device and mass transfer method

By combining a vacuum adsorption system with a porous material layer, negative pressure is used to form the chip for absorption and release, solving the problems of high cost, high difficulty, chip damage and low alignment accuracy in existing technologies, and realizing low-cost, high-precision mass transfer.

CN115763345BActive Publication Date: 2026-03-13HUAWEI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-09-02
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Existing mass transfer precision grasping technologies suffer from high costs, high technical difficulty, chip damage, and low alignment accuracy.

Method used

A vacuum adsorption system is used, which combines a vacuum chamber and a porous material layer to draw in and release the chip through negative pressure. The combination of the porous structure of the porous material layer and the groove design on the chip surface enables precise chip transfer.

Benefits of technology

It reduces the cost of chip transfer, improves alignment accuracy, avoids chip damage, and is simple and highly selective to operate.

✦ Generated by Eureka AI based on patent content.

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Abstract

This application relates to the field of optoelectronic display design technology, and particularly to a mass transfer device and method. The mass transfer device works in conjunction with a chip having a patterned sapphire substrate on its surface, the chip surface having a first groove. The mass transfer device includes a vacuum adsorption system, which comprises: a vacuum chamber; a porous material layer connected to the vacuum chamber; the porous material layer communicating with the vacuum chamber; and a second groove on the side of the porous material layer facing away from the vacuum chamber. This application's mass transfer device utilizes the principle of vacuum adsorption to achieve the purpose of adsorbing and transferring the chip, with a simple structure and low manufacturing cost. This application's mass transfer method is simple to operate, has high selectivity and transfer accuracy, does not damage the chip during the transfer process, and can effectively reduce the cost of mass chip transfer.
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Description

Technical Field

[0001] This application relates to the field of optoelectronic display design technology, and in particular to a mass transfer device and mass transfer method. Background Technology

[0002] Micro LED (Micro Light-Emitting Diode) technology, as a miniaturization and matrixing of LED technology, holds promise as a new display technology that can replace traditional displays such as Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs) due to its advantages in higher contrast, brightness, luminous efficiency, resolution, and color saturation. However, the large-scale application of Micro LEDs still faces many technical challenges. The most significant challenge is transferring a massive number of three-color micro-LED chips onto the substrate of the driving circuit, a process known as "mass transfer."

[0003] Precision gripping technology is a mainstream solution for mass transfer, mainly using forces such as electrostatics, electromagnetics, and van der Waals forces to precisely pick up and transfer chips onto a target substrate. However, existing precision gripping technologies suffer from problems such as high cost, high technical difficulty, chip damage, and low alignment accuracy. Summary of the Invention

[0004] This application provides a mass transfer device and a mass transfer method to solve the problems of high cost, high technical difficulty, chip damage, and low alignment accuracy of existing mass transfer precision grasping technologies.

[0005] This application provides a mass transfer device that cooperates with a chip having a patterned sapphire substrate on its surface, the chip surface having a first groove; the mass transfer device includes a vacuum adsorption system, the vacuum adsorption system comprising:

[0006] Vacuum cavity;

[0007] A porous material layer is connected to the vacuum cavity; the porous material layer is in communication with the vacuum cavity;

[0008] The porous material layer has a second groove on the side opposite to the vacuum cavity.

[0009] In one possible design, the mass transfer device further includes a controller connected to the vacuum adsorption system.

[0010] In one possible design, the vacuum chamber is provided with an air extraction port and an air filling port;

[0011] The vacuum adsorption system further includes a vacuum generating device, which is connected to the air extraction port and the air filling port respectively; the vacuum generating device is connected to the controller.

[0012] In one possible design, a negative pressure forming channel is provided within the vacuum chamber; the negative pressure forming channel has a first end and a second end; the first end is connected to the atmosphere, and the second end is connected to the porous material layer.

[0013] In one possible design, the negative pressure forming channel is provided with a first liquid diaphragm and a second liquid diaphragm, and an electrolyte solution is filled between the first liquid diaphragm and the second liquid diaphragm.

[0014] In one possible design, a sensing electrode is provided on the outer periphery of the negative pressure forming channel.

[0015] In one possible design, the first end is equipped with a first electrode terminal, and the second end is equipped with a second electrode terminal;

[0016] The vacuum adsorption system further includes a first power source, with the first electrode terminal and the second electrode terminal respectively connected to the positive and negative terminals of the first power source; the first power source is connected to the controller.

[0017] In one possible design, the second liquid diaphragm has an integrated electric heating wire.

[0018] In one possible design, a third electrode terminal is installed on the outer wall of the negative pressure forming channel near the first end, and a fourth electrode terminal is installed on the outer wall of the negative pressure forming channel near the second end.

[0019] The vacuum adsorption system further includes a second power source, and the third and fourth electrode terminals are respectively connected to the positive and negative terminals of the second power source; the second power source is connected to the controller.

[0020] In one possible design, the porous material layer is a silicone elastomer.

[0021] This application also provides a mass transfer method, wherein the mass transfer method employs the mass transfer apparatus according to any one of claims 1-10; the mass transfer method includes the following steps:

[0022] Align the vacuum adsorption system with the chip so that the porous material layer adheres tightly to the chip surface;

[0023] The vacuum adsorption system is activated to create a negative pressure between the chip and the porous material layer in order to grip the chip.

[0024] The chip is transferred to the target substrate, and the vacuum adsorption system is turned off and on to eliminate the negative pressure between the chip and the porous material layer, thereby releasing the chip.

[0025] Advantages of this application:

[0026] This application discloses a mass transfer device comprising a vacuum adsorption system, which utilizes the principle of vacuum adsorption to achieve the purpose of adsorbing and transferring chips. It features a simple structure and low manufacturing cost. The vacuum adsorption system includes a vacuum chamber and a porous material layer connected to the vacuum chamber. The vacuum chamber provides favorable space for the formation of negative pressure. The porous material layer is made of porous material and has a loose, porous structure. During use, gas can be rapidly transported within the pore structure of the porous material layer and the first groove on the chip surface. The pore structure of the porous material layer and the first groove on the chip surface facilitate the formation of negative pressure, thereby generating adsorption force, enabling the mass transfer device to adsorb the chip. Furthermore, the adsorption force generated by the negative pressure is dispersed and transferred to the chip through the pore structure of the porous material layer and the first groove on the chip surface, resulting in uniform force between the porous material layer and the chip. This avoids the problem of uneven force on the chip that could lead to breakage when the vacuum adsorption system directly contacts and adsorbs the chip. Simultaneously, the pore structure of the porous material layer can undergo slight deformation to achieve a tight fit with the chip surface. When releasing the chip, the porous material in the porous material layer distributes the suction force to the chip, resulting in better vertical alignment and avoiding inconsistent angles caused by uneven force distribution. This significantly improves alignment accuracy. To further enhance the suction force generated by the porous material layer and the chip, a second groove is provided on the side of the porous material layer facing away from the vacuum chamber. This second groove provides a wider flow space for gas, facilitating the formation of a larger negative pressure. During chip extraction, the second groove is aligned with the first groove on the chip surface, further increasing the gas flow space and promoting negative pressure formation.

[0027] This application presents a mass transfer method that is simple to operate, has high selectivity and transfer accuracy, does not damage the chip during the transfer process, and can effectively reduce the cost of mass transfer of chips.

[0028] It should be understood that the above general description and the following detailed description are merely exemplary and do not limit this application. Attached Figure Description

[0029] Figure 1 This diagram illustrates the use of a mass transfer device and a chip in the prior art.

[0030] Figure 2 This diagram illustrates the use of a mass transfer device and a chip in the prior art (Technology 2).

[0031] Figure 3 A diagram showing the use of the mass transfer device provided in this application in conjunction with a chip in a first embodiment;

[0032] Figure 4 A schematic diagram illustrating the application scenario of the mass transfer device provided in this application;

[0033] Figure 5 A diagram showing the use of the mass transfer device provided in this application in the second embodiment when picking up chips;

[0034] Figure 6 A diagram showing the use of the mass transfer device provided in this application in conjunction with chip release in a second embodiment;

[0035] Figure 7 A diagram showing the use of the mass transfer device provided in this application in the third embodiment when picking up chips;

[0036] Figure 8 A diagram showing the use of the mass transfer device provided in this application in a third embodiment during chip release;

[0037] Figure 9 A diagram showing the use of the mass transfer device provided in this application in the fourth embodiment when picking up chips;

[0038] Figure 10 A diagram showing the use of the mass transfer device provided in this application in the fourth embodiment when releasing the chip.

[0039] Figure label:

[0040] 1'-Chip;

[0041] 11'-Coating;

[0042] 1” - Damaged chip;

[0043] 1-Chip;

[0044] 10 - First groove;

[0045] 11- Solder joint;

[0046] 2-Vacuum adsorption system;

[0047] 21-Vacuum cavity;

[0048] 210 - Negative pressure forms a channel;

[0049] 210a - First end;

[0050] 210b - Second end;

[0051] 2101 - First liquid diaphragm;

[0052] 2102 - Second liquid diaphragm;

[0053] 2103 - Electrolyte solution;

[0054] 2104 - First electrode terminal;

[0055] 2105 - Second electrode terminal;

[0056] 2106 - Third electrode terminal;

[0057] 2107 - Fourth electrode terminal;

[0058] 211 - Exhaust port;

[0059] 212 - Inflation port;

[0060] 22-Porous material layer;

[0061] 220 - Second groove;

[0062] 3-Transfer head;

[0063] 31-Electromagnetic chuck;

[0064] 3'-Transfer head;

[0065] 32' - Laser emitter;

[0066] 33'-Buffer layer;

[0067] 4-Wafer;

[0068] 5-Display panel substrate.

[0069] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. Detailed Implementation

[0070] To better understand the technical solution of this application, the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0071] Precision gripping technology is a mainstream solution for mass transfer, primarily utilizing forces such as electrostatics, electromagnetics, and van der Waals forces to precisely pick up and transfer chips onto a target substrate. Existing precision gripping technologies mainly include the following two techniques:

[0072] Technique 1: such as Figure 1As shown, the mass transfer device includes a transfer head 3, and an electromagnetic suction head 31 is provided inside the transfer head. In order to attract the chip 1', a coating 11' that can attract the electromagnetic suction head 31 needs to be provided on the surface of the chip 1'. After the transfer is completed and the alignment is completed, the electromagnetic suction head 31 is opened to pick up the chip 1' from the substrate and transfer it to the target substrate. Then the electromagnetic suction head 31 is closed to transfer the chip 1' to the target substrate.

[0073] This technology typically requires the construction of a special coating on both the transfer head 3 and the chip 1' to impart electrostatic or electromagnetic forces, which undoubtedly increases cost and technical difficulty. In addition, the transfer speed, i.e., the output per hour (UPH), is also a major barrier limiting its large-scale application.

[0074] Technology 2: Rapid scanning of the source substrate directly using a laser beam. For example... Figure 2 As shown, the mass transfer device includes a transfer head 3', a laser emitter 32' installed inside the transfer head 3', and a buffer layer 33' disposed on the transfer head 3'. The laser emitter 32' is used to heat the buffer layer 33', and the heated buffer layer 33' can be used to adsorb and transfer the chip 1'. After the transfer and alignment are completed, the laser emitter 32' is opened, the buffer layer 33' is heated, the buffer layer 33' adsorbs the chip 1', and the chip 1' is released and precisely integrated onto the target substrate.

[0075] In this technology, laser heating is likely to damage the chip 1' itself, and the residue on the buffer layer 33' will also affect the performance of the chip 1'; in addition, the chip 1' is very easy to move in the horizontal direction when the laser heating is released, that is, the alignment accuracy is low.

[0076] To address the problems of high cost, technical difficulty, chip damage, and low alignment accuracy in existing mass transfer precision grasping technologies, this application provides a mass transfer device that can be used to transfer MicroLED chips in batches onto the substrate of a display panel.

[0077] To improve the light extraction efficiency of Micro LED chips, the chip surface is typically patterned using a patterned sapphire substrate (PSS). PSS patterning involves using photolithography and etching processes to create a patterned surface on the sapphire substrate. After PSS patterning, the chip surface will have a grooved structure.

[0078] like Figure 3As shown, this mass transfer device works in conjunction with a chip 1 having a patterned sapphire substrate. The chip 1 has a first groove 10 on its surface, which provides space for gas flow. Solder joints 11 are provided on the chip 1 for positioning and connecting it to the substrate. The mass transfer device includes a vacuum adsorption system 2. Utilizing the first groove 10 on the surface of the chip 1, and employing the principle of vacuum adsorption, a negative pressure is created between the mass transfer device and the chip 1 with the patterned sapphire substrate through the vacuum adsorption system 2, achieving the purpose of adsorbing the chip 1 and thus completing the transfer of the chip 1. Using the principle of vacuum adsorption to complete the transfer of the chip 1 has advantages such as high cost, low technical difficulty, no damage to the chip, and high alignment accuracy.

[0079] The vacuum adsorption system 2 includes a vacuum chamber 21 and a porous material layer 22, with the porous material layer 22 connected to the vacuum chamber 21. The porous material layer 22 is in communication with the vacuum chamber 21. The vacuum chamber 21 provides favorable space for the formation of negative pressure. The porous material layer 22 is made of porous material and has a loose, porous structure. During use, gas can be rapidly transported within the pore structure of the porous material layer 22 and the first groove 10 on the surface of the chip 1. The pore structure of the porous material layer 22 and the first groove 10 on the surface of the chip 1 facilitate the formation of negative pressure, thereby generating suction force, enabling the mass transfer device to adsorb the chip 1. Furthermore, the porous structure of the porous material layer 22 and the first groove 10 on the surface of the chip 1 disperse and transfer the suction force generated by the negative pressure to the chip 1, making the force between the porous material layer 22 and the chip 1 uniform. This avoids the problem of uneven force on the chip 1, which could lead to breakage, when the vacuum adsorption system 2 directly contacts and adsorbs the chip 1. At the same time, the porous structure of the porous material layer 22 can undergo slight deformation to achieve a tight fit with the surface of the chip 1. When releasing the chip 1, the porous material in the porous material layer 22 disperses and transfers the suction force to the chip 1, resulting in better vertical consistency of the chip 1 during release. This avoids the problem of inconsistent angles when releasing the chip 1 due to uneven force, significantly improving alignment accuracy.

[0080] In order to increase the suction force generated by the porous material layer 22 and the chip 1, the porous material layer 22 has a second groove 220 on the side away from the vacuum cavity 21. The second groove 220 is designed to provide a wider flow space for gas flow, which is conducive to the formation of a larger negative pressure. When the chip 1 is sucked up, the second groove 220 is aligned with the first groove 10 on the surface of the chip 1, so that the gas flow space is larger and it is more conducive to the formation of negative pressure.

[0081] In another specific embodiment, the mass transfer device further includes a controller connected to the vacuum adsorption system 2. The controller controls the vacuum adsorption system 2, controlling its on and off states, thereby enabling the mass transfer device to pick up and release the chip 1. The controller can also control the magnitude of the suction force generated by the vacuum adsorption system 2 to meet the usage requirements of chips of different sizes and types.

[0082] Specifically, the mass transfer device may include multiple controllers and multiple vacuum adsorption systems 2, with one controller controlling one vacuum adsorption system 2. By adjusting the opening and closing of the vacuum adsorption systems 2 at different positions, the chip 1 at a specific location can be picked up and transferred. It can also be used for substrate replacement. In practical applications, such as... Figure 4 As shown, it is necessary to transfer Micro LED chips 1, which have been cut from different wafers 4, to the display panel substrate 5 in batches. The vacuum adsorption system 2 of the mass transfer device of this application is aligned with the chips 1 to be transferred on the wafer 4, and the vacuum adsorption system 2 is turned on to pick up and transfer chips 1 at specific locations. For chips 1 that do not need to be transferred, the corresponding vacuum adsorption system 2 of the mass transfer device is in the off state. When a damaged chip 1” appears on a wafer 4 and needs to be replaced, the vacuum adsorption system 2 of the mass transfer device of this application is aligned with these damaged chips 1” on the wafer 4, and the vacuum adsorption system 2 is turned on to pick up and replace the damaged chip 1”.

[0083] In one specific embodiment, such as Figure 5 As shown, the vacuum chamber 21 has an extraction port 211 and an inflation port 212. The extraction port 211 is used to discharge gas from the vacuum chamber 21 to relieve the negative pressure between the porous material layer 22 and the chip 1, thereby releasing the chip 1. The inflation port 212 is used to fill the vacuum chamber 21 with gas to create a negative pressure between the porous material layer 22 and the chip 1, thereby absorbing the chip 1.

[0084] Specifically, the vacuum adsorption system 2 also includes a vacuum generating device, which can be a vacuum pump. The vacuum generating device is connected to the suction port 211 and the inflation port 212. When adsorbing chip 1, as... Figure 5 As shown, when the air inlet 212 is opened, the vacuum generator fills the vacuum chamber 21 with air, creating a negative pressure between the porous material layer 22 and the chip 1. The suction force generated by the negative pressure causes the vacuum adsorption system 2 to pick up the chip 1. When releasing the chip 1, as shown... Figure 6 As shown, when the evacuation port 211 is opened, the gas inside the vacuum chamber 21 is discharged from the evacuation port 211, the negative pressure between the porous material layer 22 and the chip 1 is released, and the vacuum adsorption system 2 releases the chip 1. In order to realize the automated control of the vacuum generator, the vacuum generator is connected to the controller.

[0085] In another specific embodiment, such as Figures 7-10 As shown, a negative pressure forming channel 210 is provided inside the vacuum chamber 21, where a negative pressure is formed by the gas. Specifically, the negative pressure forming channel 210 has a first end 210a and a second end 210b. The first end 210a is connected to the atmosphere, and the second end 210b is connected to the porous material layer 22. Specifically, a first liquid diaphragm 2101 and a second liquid diaphragm 2102 are provided inside the negative pressure forming channel 210, and an electrolyte solution 2103 is filled between the first liquid diaphragm 2101 and the second liquid diaphragm 2102.

[0086] The vacuum adsorption system 2 in this embodiment utilizes the principle of liquid micropump to generate negative pressure. A first liquid diaphragm 2101 and a second liquid diaphragm 2102 are disposed within the negative pressure forming channel 210. An electrolyte solution 2103 is filled between the first liquid diaphragm 2101 and the second liquid diaphragm 2102. When an electric field is applied to both ends of the electrolyte solution 2103, a non-mechanical liquid micropump structure is formed. This structure drives the embedded electrolyte solution 2103 to move in a first direction, thereby generating negative pressure between the porous material layer 22 and the pore structure of the chip 1. This firmly adsorbs the chip 1 and transfers it to the target substrate. Then, by changing the positive and negative terminals of the power supply, the electrolyte solution 2103 is driven to move in a second direction, thereby releasing the negative pressure and releasing the chip 1. The electrolyte solution 2103 fills the space between the first liquid diaphragm 2101 and the second liquid diaphragm 2102, facilitating the overall movement of the electrolyte solution 2103 along the negative pressure forming channel 210.

[0087] In one specific embodiment, such as Figure 7 and Figure 8 As shown, in order to make the overall movement of the electrolyte solution 2103 faster and more conducive to the formation of negative pressure, an induction electrode is provided on the outer periphery of the negative pressure forming channel 210. Under the action of the induction electrode, the electrolyte solution 2103 will generate induced charge. When the two ends of the electrolyte solution 2103 are energized, the induced charge will move back and forth along the negative pressure forming channel 210 under the action of Coulomb force in the electric field.

[0088] Specifically, such as Figure 7 and Figure 8 As shown, in order to create an electric field across the electrolyte solution 2103, a first electrode terminal 2104 is installed at the first end 210a, and a second electrode terminal 2105 is installed at the second end 210b. The vacuum adsorption system 2 also includes a first power supply, and the first electrode terminal 2104 and the second electrode terminal 2105 are respectively connected to the positive and negative terminals of the first power supply. When adsorbing chip 1, as... Figure 7As shown, the porous material layer 22 of the vacuum adsorption system 2 is first tightly attached to the surface of the chip 1. The first electrode terminal 2104 is positively charged, and the second electrode terminal 2105 is negatively charged. The induced charges in the electrolyte solution 2103 are acted upon by Coulomb force in the electric field and move towards the first end 210a. This, in turn, drags the first liquid diaphragm 2101 and the second liquid diaphragm 2102 together towards the first end 210a, thereby creating a negative pressure between the chip 1 and the porous material layer 22, thus adsorbing the chip 1. Once the chip 1 is transferred to the target substrate, as shown... Figure 8 As shown, the first electrode terminal 2104 is negatively charged, and the second electrode terminal 2105 is positively charged. The induced charges in the electrolyte solution 2103 move as a whole towards the second terminal 210b under the action of Coulomb force, and the negative pressure formed between the chip 1 and the porous material layer 22 is released. In order to realize the automated control of the vacuum adsorption system 2, the first power supply is connected to the controller.

[0089] In another specific embodiment, the second liquid diaphragm 2102 is equipped with an electric heating wire for heating the second liquid diaphragm 2102, thereby creating a temperature difference between the second liquid diaphragm 2102 and the first liquid diaphragm 2101. The electrolyte solution 2103 is composed of a weakly conductive liquid. The existence of the temperature difference causes the free charges in the electrolyte solution 2103 to be in an unbalanced state. The higher the temperature, the greater the anion charge density, and the lower the temperature, the greater the cation charge density. Thus, when an electric field is applied to both ends of the electrolyte solution 2103, it is more conducive to the electrolyte solution 2103 moving in a specific direction.

[0090] Specifically, such as Figure 9 and Figure 10 As shown, in order to form an electric field at both ends of the electrolyte solution 2103, a third electrode terminal 2106 is installed on the outer wall of the negative pressure forming channel 210 near the first end 210a, and a fourth electrode terminal 2107 is installed on the outer wall of the negative pressure forming channel 210 near the second end 210b.

[0091] The vacuum adsorption system 2 also includes a second power supply, with the third electrode terminal 2106 and the fourth electrode terminal 2107 connected to the positive and negative terminals of the second power supply, respectively; the second power supply is connected to a controller. When adsorbing chip 1, as... Figure 9 As shown, the porous material layer 22 of the vacuum adsorption system 2 is first tightly attached to the surface of the chip 1. Preferably, the second groove 220 is aligned with the first groove 10, the third electrode terminal 2106 is negatively charged, and the fourth electrode terminal 2107 is positively charged. The free charges in the electrolyte solution 2103 are subjected to Coulomb force in the electric field and move towards the first end 210a, thereby dragging the first liquid diaphragm 2101 and the second liquid diaphragm 2102 as a whole towards the first end 210a, thus forming a negative pressure between the chip 1 and the porous material layer 22 to adsorb the chip 1. After the chip 1 is transferred to the target substrate, as shown... Figure 10 As shown, the third electrode terminal 2106 is positively charged, and the fourth electrode terminal 2107 is negatively charged. Free charges in the electrolyte solution 2103 move towards the second terminal 210b under the influence of Coulomb force, releasing the negative pressure formed between the chip 1 and the porous material layer 22. To achieve automated control of the vacuum adsorption system 2, a second power supply is connected to the controller.

[0092] To prevent damage to the chip 1 by the porous material layer 22 during the chip pick-up process, the porous material layer 22 can be a silicone elastomer. Specifically, the silicone elastomer can be, but is not limited to, materials such as polydimethylsiloxane and polymethyl methacrylate.

[0093] This application also provides a mass transfer method, which uses the mass transfer apparatus disclosed in this application.

[0094] The mass transfer method includes the following steps:

[0095] Alignment: Assemble the vacuum chamber 21 and the porous material layer 22 together to form the vacuum suction head of the vacuum adsorption system 2. Align the vacuum suction head with the chip 1. If multiple chips 1 are to be transferred at the same time, each vacuum suction head can be aligned with one chip 1.

[0096] Absorb: such as Figure 5 As shown, the porous material layer 22 is tightly attached to the surface of the chip 1, and the second groove 220 is aligned with the first groove 10. The vacuum generator is turned on, the air extraction port 211 of the vacuum chamber 21 is opened, and the air filling port 212 is closed, so that a negative pressure is formed between the chip 1 and the porous material layer 22 to grip the chip 1.

[0097] Release: Transfer chip 1 onto the target substrate, such as... Figure 6 As shown, the air inlet 212 of the vacuum chamber 21 is opened and the air outlet 211 is closed, so that the negative pressure formed between the chip 1 and the porous material layer 22 disappears, thereby releasing the chip 1.

[0098] In another specific embodiment, the mass transfer method includes the following steps:

[0099] Alignment: Assemble the vacuum chamber 21 and the porous material layer 22 together to form the vacuum suction head of the vacuum adsorption system 2. Align the vacuum suction head with the chip 1. If multiple chips 1 are to be transferred at the same time, each vacuum suction head can be aligned with one chip 1.

[0100] Absorb: such as Figure 7As shown, the porous material layer 22 is tightly attached to the surface of the chip 1, and the second groove 220 is aligned with the first groove 10. The electrolyte solution 2103 generates induced charges under the action of the induction electrode, which applies positive electricity to the first electrode terminal 2104 and negative electricity to the second electrode terminal 2105. The induced charges in the electrolyte solution 2103 are subjected to Coulomb force in the electric field and move towards the first end 210a, thereby dragging the first liquid diaphragm 2101 and the second liquid diaphragm 2102 as a whole towards the first end 210a, thereby forming a negative pressure between the chip 1 and the porous material layer 22 to draw the chip 1 in.

[0101] Release: Transfer chip 1 onto the target substrate, such as... Figure 8 As shown, the first electrode terminal 2104 is negatively charged and the second electrode terminal 2105 is positively charged. The induced charges in the electrolyte solution 2103 move as a whole towards the second terminal 210b under the action of Coulomb force, and the negative pressure formed between the chip 1 and the porous material layer 22 is released.

[0102] In one specific embodiment, the mass transfer method includes the following steps:

[0103] Alignment: Assemble the vacuum chamber 21 and the porous material layer 22 together to form the vacuum suction head of the vacuum adsorption system 2. Align the vacuum suction head with the chip 1. If multiple chips 1 are to be transferred at the same time, each vacuum suction head can be aligned with one chip 1.

[0104] Absorb: such as Figure 9 As shown, the porous material layer 22 is tightly attached to the surface of the chip 1, and the second groove 220 is aligned with the first groove 10. The second liquid diaphragm 2102 is heated to create a temperature difference between the second liquid diaphragm 2102 and the first liquid diaphragm 2101. The third electrode terminal 2106 is negatively charged, and the fourth electrode terminal 2107 is positively charged. The free charges in the electrolyte solution 2103 are subjected to Coulomb force in the electric field and move towards the first end 210a, thereby dragging the first liquid diaphragm 2101 and the second liquid diaphragm 2102 as a whole towards the first end 210a. This creates a negative pressure between the chip 1 and the porous material layer 22, thereby drawing the chip 1 in.

[0105] Release: Transfer chip 1 onto the target substrate, such as... Figure 10 As shown, the third electrode terminal 2106 is positively charged and the fourth electrode terminal 2107 is negatively charged. The free charges in the electrolyte solution 2103 move as a whole towards the second end 210b under the action of Coulomb force, and the negative pressure formed between the chip 1 and the porous material layer 22 is released.

[0106] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A mass transfer device, characterized by, The mass transfer device is matched with a chip (1) with a patterned sapphire substrate on the surface, and the surface of the chip (1) has a first groove (10); the mass transfer device comprises a vacuum adsorption system (2), wherein the vacuum adsorption system (2) comprises: a vacuum cavity (21); a porous material layer (22) connected to the vacuum cavity (21); the porous material layer (22) is in communication with the vacuum cavity (21); the side of the porous material layer (22) away from the vacuum cavity (21) has a second groove (220).

2. The mass transfer device of claim 1, wherein, The mass transfer device further comprises a controller connected to the vacuum adsorption system (2).

3. The mass transfer device of claim 2, wherein, The vacuum cavity (21) is provided with an air outlet (211) and an air inlet (212); the vacuum adsorption system (2) further comprises a vacuum generating device connected to the air outlet (211) and the air inlet (212), respectively; the vacuum generating device is connected to the controller.

4. The mass transfer device of claim 2, wherein, The vacuum cavity (21) is provided with a negative pressure forming channel (210); the negative pressure forming channel (210) has a first end (210a) and a second end (210b); the first end (210a) is in communication with the atmosphere, and the second end (210b) is in communication with the porous material layer (22).

5. The mass transfer device of claim 4, wherein, The negative pressure forming channel (210) is provided with a first liquid diaphragm (2101) and a second liquid diaphragm (2102), and an electrolyte solution (2103) is filled between the first liquid diaphragm (2101) and the second liquid diaphragm (2102).

6. The mass transfer device of claim 5, wherein, The negative pressure forming channel (210) is provided with an induction electrode on the outer periphery.

7. The mass transfer device of claim 6, wherein, The first end (210a) is provided with a first electrode terminal (2104), and the second end (210b) is provided with a second electrode terminal (2105); the vacuum adsorption system (2) further comprises a first power supply, and the first electrode terminal (2104) and the second electrode terminal (2105) are respectively connected to the positive and negative electrodes of the first power supply; the first power supply is connected to the controller.

8. The mass transfer device of claim 5, wherein, The second liquid diaphragm (2102) is provided with an electric heating wire.

9. The mass transfer device of claim 8, wherein, The negative pressure forming channel (210) is provided with a third electrode terminal (2106) on the outer side wall close to the first end (210a), and a fourth electrode terminal (2107) on the outer side wall close to the second end (210b); the vacuum adsorption system (2) further comprises a second power supply, and the third electrode terminal (2106) and the fourth electrode terminal (2107) are respectively connected to the positive and negative electrodes of the second power supply; the second power supply is connected to the controller.

10. The mass transfer device of claim 1, wherein, The porous material layer (22) is a silica gel elastomer.

11. A mass transfer method characterized by, The mass transfer method adopts the mass transfer device according to any one of claims 1-10; the mass transfer method comprises the following steps: aligning the vacuum adsorption system (2) with the chip (1) so that the porous material layer (22) tightly adheres to the surface of the chip (1); Turning on the vacuum suction system (2) to form a negative pressure between the chip (1) and the porous material layer (22) to grab the chip (1); Transferring the chip (1) to a target substrate, and turning off the vacuum suction system (2) to make the negative pressure between the chip (1) and the porous material layer (22) disappear to release the chip (1).

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