Semiconductor device and method of manufacturing the same

By forming vias and air holes in the source/drain regions of the semiconductor structure, the problem of large parasitic capacitance in semiconductor devices is solved, thereby improving radio frequency performance and simplifying the manufacturing process.

CN115763363BActive Publication Date: 2026-05-29WUHAN XINXIN SEMICON MFG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
WUHAN XINXIN SEMICON MFG CO LTD
Filing Date
2022-10-18
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Semiconductor devices have large parasitic capacitances, especially in metal interconnect processes where parasitic capacitances account for up to 30% of the total parasitic capacitance, leading to a decrease in radio frequency performance. Parasitic capacitances between interconnect vias and stray capacitances in the gate and nearby areas are difficult to avoid.

Method used

Through-holes and air holes are formed on the source/drain regions of the semiconductor structure. Air holes are set between adjacent through-holes to form cavities, and conductive material is filled into the air holes. Through-holes and air holes are formed simultaneously through an etching process to reduce parasitic capacitance.

Benefits of technology

It effectively reduces the parasitic capacitance of semiconductor devices, improves radio frequency performance, simplifies the manufacturing process, and avoids the problem of conductive materials entering air holes.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application provides a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises a semiconductor substrate, a gate electrode on the semiconductor substrate, and an interlayer dielectric layer covering the semiconductor substrate and the gate electrode; the semiconductor structure has a first source / drain region and a second source / drain region; forming a first communication hole and a first air hole on the first source / drain region and / or the second source / drain region; wherein at least one first air hole is arranged between two adjacent first communication holes in an X direction and / or a Y direction; the X direction is a gate length direction, and the X direction is perpendicular to the Y direction; sealing an aperture of the first air hole to form a first cavity in the first air hole; and filling a conductive material in the first communication hole. The manufacturing method of the semiconductor device can reduce the parasitic capacitance between two adjacent first communication holes, and effectively reduces the influence of the parasitic capacitance of the prepared semiconductor device on the radio frequency performance thereof.
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