Thin film transistor array, method of manufacturing the same, and display apparatus including the same

Abstract

Disclosed is a thin film transistor array including a substrate, a first thin film transistor over the substrate, and a second thin film transistor over the substrate, wherein the first thin film transistor includes a first active layer including an oxide semiconductor over the substrate, the first active layer includes a first channel portion, a first conductor portion, and a first intermediate portion between the first channel portion and the first conductor portion, the second thin film transistor includes a second active layer including an oxide semiconductor over the substrate, the second active layer includes a second channel portion, a second conductor portion, and a second intermediate portion between the second channel portion and the second conductor portion, and the first conductor portion of the first thin film transistor has a higher resistivity than the second conductor portion of the second thin film transistor.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2021-0117838, filed on September 3, 2021, and Korean Patent Application No. 10-2021-0194810, filed on December 31, 2021, which are incorporated herein by reference as if their contents were fully set forth herein. Technical Field

[0003] This disclosure relates to thin-film transistor arrays, methods for manufacturing the same, and display devices including such thin-film transistor arrays. Background Technology

[0004] Based on the material constituting the active layer, thin-film transistors can be classified into amorphous silicon thin-film transistors using an active layer made of amorphous silicon, polycrystalline silicon thin-film transistors using an active layer made of polycrystalline silicon, and oxide semiconductor thin-film transistors using an active layer made of oxide semiconductor.

[0005] Because oxide semiconductor thin-film transistors (TFTs) exhibit large resistance variations depending on oxygen content, they offer advantages in achieving desired physical properties. Furthermore, the manufacturing process for TFTs is cost-effective because the oxide constituting the active layer is formed into a thin film at relatively low temperatures. Due to the nature of oxides, oxide semiconductors are transparent, which facilitates the realization of transparent display devices.

[0006] For coplanar transistors with top gate structures stacked on the same plane using the same process, the conductor portion resistance and the length of the middle portion of the active layer are the same. Therefore, it is difficult to improve electrical characteristics such as mobility and on-state current, and it is difficult to reduce short-channel effects, such as hot carrier stress (HCS) and threshold voltage roll-off, that occur in thin-film transistors with short channel lengths. Summary of the Invention

[0007] The inventors of this disclosure recognized the aforementioned problems and conducted various experiments to improve electrical characteristics such as mobility and on-state current, and to reduce short-channel effects, such as hot carrier stress (HCS) and threshold voltage roll-off, in thin-film transistors with short channel lengths. Based on the results of these experiments, a thin-film transistor array, a display device including the thin-film transistor array, and a method for manufacturing the thin-film transistor array have been proposed. This thin-film transistor array is capable of reducing short-channel effects, such as hot carrier stress (HCS) and threshold voltage roll-off, in thin-film transistors with short channel lengths, and allows for easy adjustment of mobility and on-state current.

[0008] In view of the above problems, this disclosure was made, and the purpose of this disclosure is to provide a thin-film transistor array, a display device including the thin-film transistor array, and a method for manufacturing the thin-film transistor array, wherein the conductor portions of a plurality of transistors provided by the same scheme have different resistances.

[0009] Another object of this disclosure is to provide a thin-film transistor array, a display device including the thin-film transistor array, and a method for manufacturing the thin-film transistor array, which can reduce short-channel effects, such as hot carrier stress (HCS) and threshold voltage roll-off, generated in thin-film transistors with short channel lengths, reduce the threshold voltage required in individual thin-film transistors among multiple thin-film transistors provided by the same scheme, and optimize electrical characteristics, such as mobility and on-state current.

[0010] Another object of this disclosure is to provide a thin-film transistor array, a display device including the thin-film transistor array, and a method for manufacturing the thin-film transistor array, wherein the active layers of multiple transistors provided by the same scheme have different dopant concentrations.

[0011] According to one aspect of this disclosure, the above and other objectives can be achieved by providing a thin-film transistor array, the thin-film transistor array comprising: a substrate, a first thin-film transistor located on the substrate, and a second thin-film transistor located on the substrate, wherein the first thin-film transistor includes a first active layer comprising an oxide semiconductor located on the substrate, the first active layer including a first channel portion, a first conductor portion, and a first intermediate portion located between the first channel portion and the first conductor portion, the second thin-film transistor includes a second active layer comprising an oxide semiconductor located on the substrate, the second active layer including a second channel portion, a second conductor portion, and a second intermediate portion located between the second channel portion and the second conductor portion, and the resistivity of the first conductor portion of the first thin-film transistor is higher than the resistivity of the second conductor portion of the second thin-film transistor.

[0012] According to another aspect of this disclosure, the above and other objectives can be achieved by providing a display device including the aforementioned thin-film transistor array.

[0013] According to another aspect of this disclosure, the above and other objectives can be achieved by providing a method for manufacturing a thin-film transistor array, the thin-film transistor array including a first thin-film transistor and a second thin-film transistor located on a substrate, the manufacturing method comprising: forming a first active layer and a second active layer spaced apart from each other on the substrate; forming a gate insulating film for covering the first active layer and the second active layer; forming a first gate electrode overlapping the first active layer; forming a second gate electrode overlapping a portion of the second active layer and not overlapping one side and the other side of the second active layer; performing a first doping on the first active layer and the second active layer while using the first gate electrode and the second gate electrode as a mask; patterning the first gate electrode not overlapping one side and the other side of the first active layer; and performing a second doping on the first active layer and the second active layer while using the patterned first gate electrode and the second gate electrode as a mask.

[0014] It should be understood that the foregoing general description and the following detailed description of this disclosure are exemplary and explanatory, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0015] The above and other objects, features and other advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0016] Figure 1 This is a cross-sectional view of a thin-film transistor array according to an embodiment of the present disclosure;

[0017] Figure 2 The dopant concentrations of the active layers of the first thin-film transistor and the second thin-film transistor in an array according to embodiments of the present disclosure are shown.

[0018] Figure 3 The first doping of a thin-film transistor array according to this disclosure is shown;

[0019] Figure 4 A second doping of a thin-film transistor array according to this disclosure is shown;

[0020] Figure 5 This is a graph comparing the first doping concentration, the second doping concentration, and the total doping concentration of the thin-film transistor array disclosed herein;

[0021] Figure 6 The resistivity of the first and second thin-film transistors of the thin-film transistor array according to an embodiment of the present disclosure is shown;

[0022] Figure 7 It is a chart of dopant concentration based on the dopant doping depth set under various conditions;

[0023] Figure 8 This is a schematic diagram showing the conductor penetration depth in the middle section;

[0024] Figures 9A to 9F A method for manufacturing a thin-film transistor array according to the present disclosure is shown;

[0025] Figure 10 This is a schematic diagram of a display device according to another embodiment of the present disclosure;

[0026] Figure 11 yes Figure 10 The circuit diagram of any pixel P;

[0027] Figure 12 yes Figure 11 A planar image of pixel P;

[0028] Figure 13 It is along Figure 12 The cross-sectional view of line III-III'; and

[0029] Figure 14 and Figure 15 This is a circuit diagram of any pixel of a display device according to another embodiment of the present disclosure. Detailed Implementation

[0030] The advantages and features of this disclosure, as well as its implementation, will be illustrated by the following embodiments described with reference to the accompanying drawings. However, this disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is limited only by the scope of the claims.

[0031] The shapes, dimensions, ratios, angles, and quantities disclosed in the accompanying drawings used to describe embodiments of this disclosure are merely examples, and therefore this disclosure is not limited to the details illustrated. The same reference numerals always refer to the same elements. In the following description, detailed descriptions of relevant known functions or constructions will be omitted where they are determined to unnecessarily obscure the essential points of this disclosure.

[0032] When using the terms “comprising,” “having,” and “including” as described in this specification, additional parts may also exist unless “only” is used. Singular terms may include plural forms unless otherwise stated.

[0033] When interpreting components, they are explained as including error regions, even though no explicit description is given.

[0034] When describing positional relationships, for example, when the positional order is described as "above," "over," "below," "below," and "adjacent," unless "exactly" or "directly" is used, it may include cases where there is no contact between them. If it is said that the first element is placed "above" the second element, this does not mean that the first element is actually placed above the second element in the drawing. The upper and lower parts of the object of interest can change depending on the orientation of the object. Therefore, in the drawing or actual construction, the case where the first element is placed "above" the second element includes the case where the first element is placed "below" the second element, as well as the case where the first element is placed "above" the second element.

[0035] When describing temporal relationships, such as when time sequence is described as “after,” “following,” “next,” and “before,” discontinuous cases may be included unless “exactly” or “directly” is used.

[0036] It should be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of this disclosure.

[0037] It should be understood that the term "at least one" includes all combinations relating to any one of the items. For example, "at least one of the first element, the second element, and the third element" can include all combinations of two or more elements selected from the first, second, and third elements, or it can include each of the first, second, and third elements.

[0038] As will be fully understood by those skilled in the art, the features of the various embodiments of this disclosure may be coupled or combined with each other in part or in whole, and may interact with each other and be technically driven in various ways. Embodiments of this disclosure may be implemented independently of each other, or may be implemented together in an interdependent relationship.

[0039] In the accompanying drawings, the same or similar elements are indicated by the same reference numerals, even if they are depicted in different drawings.

[0040] In the embodiments of this disclosure, for ease of explanation, the source electrode and the drain electrode are distinguished from each other. However, the source electrode and the drain electrode can be used interchangeably. Therefore, the source electrode can be the drain electrode, and the drain electrode can be the source electrode. Furthermore, the source electrode in any embodiment of this disclosure can be the drain electrode in another embodiment of this disclosure, and the drain electrode in any embodiment of this disclosure can be the source electrode in another embodiment of this disclosure.

[0041] In one or more embodiments of this disclosure, for ease of explanation, the source region is distinguished from the source electrode, and the drain region is distinguished from the drain electrode. However, the embodiments of this disclosure are not limited to this structure. For example, the source region may be the source electrode, and the drain region may be the drain electrode. Furthermore, the source region may be the drain electrode, and the drain region may be the source electrode.

[0042] Figure 1 This is a cross-sectional view of a thin-film transistor array according to an embodiment of the present disclosure. Figure 2 The dopant concentrations of the active layers of the first thin-film transistor and the second thin-film transistor in a thin-film transistor array according to embodiments of the present disclosure are shown. Figure 2 The relative dopant concentrations in the horizontal direction or the first direction X in the active layer of each of the first and second thin-film transistors are shown.

[0043] In this disclosure, the concentration of the dopant is the relative concentration in the lateral or horizontal direction of the active layer, but Figure 7 Except as otherwise described, this will be described below. Additionally, Figure 7 The concentration of dopants in the thin-film transistor is the concentration distribution in the depth direction or the third direction Z of the transistor.

[0044] refer to Figure 1 and Figure 2 According to an embodiment of the present disclosure, a thin-film transistor array 100 includes a substrate 110, a first thin-film transistor TR1 located on the substrate 110, and a second thin-film transistor TR2 located on the substrate 110.

[0045] The first thin-film transistor TR1 includes an active layer 130 containing an oxide semiconductor, a gate electrode 150 provided on and spaced apart from the active layer 130, and a gate insulating film 140 located between the active layer 130 and the gate electrode 150.

[0046] The second thin-film transistor TR2 includes an active layer 230 containing an oxide semiconductor, a gate electrode 250 provided on and spaced apart from the active layer 230, and a gate insulating film 140 located between the active layer 230 and the gate electrode 250.

[0047] In the following text, refer to Figure 1 and Figure 2 The following will describe in detail a thin-film transistor array 100 according to an embodiment of the present disclosure.

[0048] The substrate 110 can be a glass substrate, a curable or flexible thin-film glass substrate, a plastic substrate, or a silicon wafer substrate. If plastic is used for the substrate 110, a flexible transparent plastic, such as polyimide, can be used. If the substrate 110 is formed of polyimide, a heat-resistant polyimide that can withstand high temperatures can be used, taking into account the high-temperature deposition process on the substrate 110.

[0049] A buffer layer 120 can be disposed on the substrate 110. The buffer layer 120 can be disposed together beneath the first thin-film transistor TR1 and the second thin-film transistor TR2. The buffer layer 120 can be made of a silicon oxide film (SiO2). x Multilayer formation of one or more inorganic films, namely silicon nitride (SiN) and silicon oxynitride (SiON).

[0050] The active layer 130 of the first thin-film transistor TR1 can be disposed on the buffer layer 120.

[0051] The active layer 130 of the first thin-film transistor TR1 may overlap with the first gate electrode 150, the first electrode 171, and the second electrode 172. The active layer 130 of the first thin-film transistor TR1 includes a channel portion 131, a first conductor portion 133a, and a second conductor portion 133b. The first conductor portion 133a is disposed on one side of the channel portion 131, and the second conductor portion 133b is disposed on the other side of the channel portion 131. The first conductor portion 133a and the second conductor portion 133b of the first thin-film transistor TR1 can be defined as an active layer 130 that does not overlap with the gate electrode 150.

[0052] The active layer 230 of the second thin-film transistor TR2 may overlap with the second gate electrode 250, the first electrode 271, and the second electrode 272. The active layer 230 of the second thin-film transistor TR2 includes a channel portion 231, a first conductor portion 233a, and a second conductor portion 233b. The first conductor portion 233a is disposed on one side of the channel portion 231, and the second conductor portion 233b is disposed on the other side of the channel portion 231. The first conductor portion 233a and the second conductor portion 233b of the second thin-film transistor TR2 can be defined as an active layer 230 that does not overlap with the gate electrode 250.

[0053] The active layer 130 of the first thin-film transistor TR1 and the active layer 230 of the second thin-film transistor TR2 may comprise at least one of the following oxide semiconductor materials: IZO (InZnO), IGO (InGaO), ITO (InSnO), IGZO (InGaZnO), IGZTO (InGaZnSnO), ITZO (InSnZnO), IGTO (InGaSnO), GO (GaO), GZTO (GaZnSnO), and GZO (GaZnO). However, one embodiment of this disclosure is not limited thereto, and the active layers may be formed of other oxide semiconductor materials generally known to those skilled in the art.

[0054] In addition, the active layer 130 of the first thin-film transistor TR1 also includes a first intermediate portion 132a located between the channel portion 131 and the first conductor portion 133a, and a second intermediate portion 132b located between the channel portion 131 and the second conductor portion 133b.

[0055] The active layer 230 of the second thin-film transistor TR2 further includes a first intermediate portion 232a located between the channel portion 231 and the first conductor portion 233a, and a second intermediate portion 232b located between the channel portion 231 and the second conductor portion 233b. The first intermediate portions 132a and 232a and the second intermediate portions 132b and 232b of this disclosure may be referred to as lightly doped drain (LDD) regions, but are not limited thereto. For example, the dopant concentration in the first intermediate portion 132a and the second intermediate portion 132b of the first thin-film transistor TR1 and the first intermediate portion 232a and the second intermediate portion 232b of the second thin-film transistor TR2 can vary from one side to the other in the first direction X. Specifically, the first and second intermediate portions 132a and 132b have a dopant concentration that increases along the direction from the channel portion 131 toward the first and second conductor portions 133a and 133b, and the dopant concentration in the first intermediate portion 132a and the second intermediate portion 132b of the first thin-film transistor TR1 can decrease as it becomes closer to the channel portion 131. The dopant concentration in the first intermediate portion 232a and the second intermediate portion 232b of the second thin-film transistor TR2 can be reduced as it moves closer to the channel portion 231.

[0056] The channel portion 131 of the first thin-film transistor TR1 may have a first length L1, each of the first intermediate portions 132a and the second intermediate portions 132b may have a second length L2, and each of the first conductor portions 133a and the second conductor portions 133b may have a third length L3. The sum of the first length L1 and the second length L2 of the active layer 130 of the first thin-film transistor TR1 may be the same as the length of the gate electrode 150 in the first direction X. The third length L3 of the active layer 130 of the first thin-film transistor TR1 may be a length other than the lengths of the channel portion 131, the first intermediate portions 132a and the second intermediate portions 132b in the first direction X of the active layer 130.

[0057] The channel portion 231 of the second thin-film transistor TR2 may have a fourth length L4, each of the first intermediate portions 232a and the second intermediate portions 232b may have a fifth length L5, and each of the first conductor portions 233a and the second conductor portions 233b may have a sixth length L6. The sum of the fourth length L4 and the fifth length L5 of the active layer 230 of the second thin-film transistor TR2 may be the same as the length of the gate electrode 250 in the first direction X. The sixth length L6 of the active layer 230 of the second thin-film transistor TR2 may be any length of the active layer 230 in the first direction X, excluding the lengths of the channel portion 231, the first intermediate portions 232a, and the second intermediate portions 232b.

[0058] According to one embodiment of this disclosure, the dopant concentrations of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 may be lower than the dopant concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2.

[0059] In this article, dopant concentration refers to the concentration of dopant produced by... Figure 3 and Figure 4 The total doping concentration of the dopant performed by the first dopant doping and the second dopant doping is described below. Therefore, the resistivity of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can be higher than the resistivity of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2.

[0060] Furthermore, according to one embodiment of this disclosure, the second length L2 of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 may be shorter than the fifth length L5 of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2. Through Figures 2 to 5The doping and diffusion of the first and second conductor portions 133a and 133b shown in the figure (described below) indicate that if the first and second conductor portions 133a and 133b of the first thin film transistor TR1 are lightly doped with dopants compared to the first and second conductor portions 233a and 233b of the second thin film transistor TR2, then the length of the first direction X of the first and second intermediate portions 132a and 132b of the first thin film transistor TR1 may be shorter than the length of the first direction X of the first and second intermediate portions 232a and 232b of the second thin film transistor TR2.

[0061] According to one embodiment of this disclosure, the distance of dopant diffusion from the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 to the first and second intermediate portions 132a and 132b can be proportional to the initial concentration of dopant in the first and second conductor portions 133a and 133b. Similarly, the distance of dopant diffusion from the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 to the first and second intermediate portions 232a and 232b can be proportional to the initial concentration of dopant in the first and second conductor portions 233a and 233b.

[0062] Therefore, the lengths of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 can be relatively shorter than the lengths of the first and second intermediate portions of the second thin-film transistor TR2.

[0063] When the structure of the first thin-film transistor TR1 is applied to a thin-film transistor with a short gate length and a short channel length, the first thin-film transistor TR1 has relatively high resistance in the first and second conductor portions 133a and 133b, relatively short length in the first and second intermediate portions 132a and 132b, and relatively long length in the channel portion 131, thereby reducing the short-channel effects generated in thin-film transistors with short channel lengths, such as hot carrier stress (HCS) and threshold voltage roll-off.

[0064] Furthermore, when hydrogen diffuses into the oxide semiconductor layer, the carrier size in the oxide semiconductor layer becomes excessively large, and therefore, the threshold voltage changes in the negative direction, which may weaken the stability of the negative bias temperature stress (NBTS) due to the negative voltage. The first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can be formed to have relatively high resistivity compared to the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, and can also be formed to have relatively low doping concentrations compared to the first and second conductor portions 233a and 233b of the second thin-film transistor TR2. Furthermore, since the difference in dopant concentration between the first conductor portion 133a and the second conductor portion 133b and the channel portion 131 in the first thin-film transistor TR1 is small, the electrical characteristic changes of the first thin-film transistor TR1 can be less sensitive to hydrogen diffusion, and the negative bias temperature stress (NBTS) is less affected by the negative voltage caused by hydrogen diffusion (e.g., threshold voltage V). th Changes in electrical properties can be reduced.

[0065] According to embodiments of this disclosure, the dopant concentrations of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can be lower than the dopant concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2. Herein, dopant concentration refers to the concentration of dopant produced by... Figure 3 and Figure 4 The total doping concentration of the dopant, which is achieved by the first dopant doping and the second dopant doping, will be described below. As a result, the resistance of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be lower than the resistance of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1.

[0066] Furthermore, according to embodiments of this disclosure, the fifth length L5 of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be greater than the second length L2 of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1. Through Figures 2 to 5The doping and diffusion of the first and second conductor portions 233a and 233b shown herein (described below) indicate that if the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 are highly doped with dopant compared to the first and second conductor portions 133a and 133b of the first thin-film transistor TR1, then the length of the first direction X of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be longer than the length of the first direction X of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1. Therefore, the length of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be relatively longer than the length of the first and second intermediate portions of the first thin-film transistor TR1.

[0067] The second thin-film transistor TR2, having the structure described above, has relatively low resistance in the first and second conductor portions 233a and 233b, relatively long length in the first and second intermediate portions 232a and 232b, and relatively short length in the channel portion 131. Thus, the second thin-film transistor TR2 can be applied to thin-film transistors that require high mobility and high conduction current.

[0068] Referring to the description of the first thin-film transistor TR1 and the second thin-film transistor TR2, the doping process performed on the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 may differ from the doping process performed on the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, depending on the required electrical characteristics of each thin-film transistor. The first thin-film transistor TR1 and the second thin-film transistor TR2 may exhibit threshold voltage, on-current, carrier mobility, and short-channel effect (V0). th Different electrical characteristics (such as roll-off, HCS, etc.).

[0069] For example, when the first thin-film transistor TR1 and the second thin-film transistor TR2 have the same length of the first direction X of the gate electrode 150, and the dopant concentration in the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 is higher than the dopant concentration in the first and second conductor portions 133a and 133b of the first thin-film transistor TR1, the length of the channel portion 231 of the second thin-film transistor TR2 can be shorter than the length of the channel portion 131 of the first thin-film transistor TR1.

[0070] In this case, the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 have high resistance and low mobility due to relatively low dopant concentrations, and the length of the channel portion 131 can be relatively long, thereby reducing the short-channel effects (e.g., hot carrier stress HCS and threshold voltage V) that occur in thin-film transistors with short channel lengths. th (Roll-off phenomenon).

[0071] Furthermore, due to the relatively high dopant concentration, the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can have low resistance and high mobility, and the length of the channel portion 131 can be shortened, thereby enabling high conduction current.

[0072] The first conductor portion 133a and the second conductor portion 133b of the first thin-film transistor TR1 and the first conductor portion 233a and the second conductor portion 233b of the second thin-film transistor TR2 can be formed by selective conductivity of the active layers 130 and 230. In this document, selective conductivity can be performed by an ion implantation process, and the dopant used in ion implantation can include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H).

[0073] According to embodiments of the present disclosure, the first conductor portions 133a and 233a of the active layers 130 and 230 may be source regions, and the second conductor portions 133b and 233b of the active layers 130 and 230 may be drain regions. However, embodiments of the present disclosure are not limited thereto, and the first conductor portions 133a and 233a may be drain regions, and the second conductor portions 133b and 233b may be source regions.

[0074] According to one embodiment of this disclosure, active layers 130 and 230 may include oxide semiconductor materials. Furthermore, active layers 130 and 230 may include a plurality of active layers stacked sequentially in a two-layer or three-layer structure, or may include a single-layer structure. When applying two-layer or three-layer active layers 130 and 230, they may include the same or different oxide semiconductor materials.

[0075] Gate electrodes 150 and 250 may be disposed on the gate insulating film 140 in each of the first thin-film transistor TR1 and the second thin-film transistor TR2. Gate electrodes 150 and 250 overlap with channel portions 131 and 231 of active layers 130 and 230, and may overlap with first intermediate portions 132a and 232a and second intermediate portions 132b and 232b.

[0076] According to embodiments of this disclosure, gate electrodes 150 and 250 may comprise at least one of the following: aluminum-based metal materials (e.g., aluminum (Al) or aluminum alloys), silver-based metal materials (e.g., silver (Ag) or silver alloys), copper-based metal materials (e.g., copper (Cu) or copper alloys), molybdenum-based metal materials (e.g., molybdenum (Mo) or molybdenum alloys), chromium (Cr), tantalum (Ta), neodymium (Nd), and titanium (Ti). Each gate electrode 150 and 250 may have a multilayer structure comprising at least two conductive films with different physical properties.

[0077] An interlayer insulating film 160 can be jointly disposed on the gate electrodes 150 and 250 of the first thin-film transistor TR1 and the second thin-film transistor TR2, as well as on the gate insulating film 140.

[0078] Interlayer insulating film 160 may include silicon oxide film (SiO2). x or silicon nitride layer SiN x It can also protect thin-film transistors.

[0079] The portion of the interlayer insulating film 160 corresponding to the contact hole can be removed so that the active layers 130 and 230 contact the first electrodes 171 and 271 and the second electrodes 172 and 272.

[0080] The first electrode 171 and the second electrode 172 of the first thin-film transistor TR1 can be disposed on the interlayer insulating film 160.

[0081] The first electrode 171 and the second electrode 172 of the first thin-film transistor TR1 may overlap with the first conductor portion 133a and the second conductor portion 133b. The first electrode 171 may serve as a source electrode, and the second electrode 172 may serve as a drain electrode. However, embodiments of this disclosure are not limited thereto, and the first electrode 171 may serve as a drain electrode, and the second electrode 172 may serve as a source electrode. Furthermore, the first conductor portion 133a and the second conductor portion 133b may serve as a source electrode and a drain electrode, respectively, and the first electrode 171 and the second electrode 172 may serve as connection electrodes between devices.

[0082] The first electrode 171 and the second electrode 172 can be connected to the active layer 130 through the first contact hole CH1 and the second contact hole CH2, respectively. Specifically, the first electrode 171 can contact the first conductor portion 133a through the first contact hole CH1, and the second electrode 172 can be spaced apart from the first electrode 171 and can contact the second conductor portion 133b through the second contact hole CH2.

[0083] The descriptions of the first electrode 171, the second electrode 172, the first contact hole CH1, and the second contact hole CH2 can be equally applied to the descriptions of the corresponding parts of the second thin-film transistor TR2.

[0084] For ease of explanation, it is shown that the dopant concentration of the intermediate portions 132a and 132b of the first thin-film transistor TR1 varies linearly between the channel portion 131 and the first and second conductor portions 133a and 133b. However, the dopant concentration of the intermediate portions 132a and 132b of the first thin-film transistor TR1 can be a streamlined curve, a logarithmic curve, or an exponential curve representing a dopant concentration gradient. This description of concentration can also be applied to the concentration of the corresponding portions of the second thin-film transistor TR2.

[0085] Figure 3 The first doping of a thin-film transistor array according to the present disclosure is shown, and Figure 4 A second doping of a thin-film transistor array according to this disclosure is shown.

[0086] refer to Figure 3 The first thin-film transistor TR1 and the second thin-film transistor TR2 of the thin-film transistor array 100 can be jointly subjected to first doping. In the process of performing the first doping on the thin-film transistor array 100, the gate electrode 150 of the first thin-film transistor TR1 may not be patterned or may be patterned to cover the entire active layer 130, and the gate electrode 250 of the second thin-film transistor TR2 may be patterned to expose the first and second conductor portions 233a and 233b.

[0087] In the dopant doping process, the gate electrode 250 of the second thin-film transistor TR2 comprises a metallic material and can therefore be used as a mask for the dopant doping process performed by ion implantation. On the other hand, even if the gate insulating film 140 is not patterned to expose the active layer 230, the dopant material of the ion implantation process can penetrate the gate insulating film 140, thereby allowing doping to be performed on the active layer 230 by the dopant doping process. However, the process conditions of the dopant doping process, such as the acceleration energy and dopant ion beam current, can be adjusted according to the thickness of the gate insulating film 140 within a range of process conditions generally known to those skilled in the art.

[0088] Therefore, regarding the active layer 130 of the first thin-film transistor TR1, the doping state remains unchanged before and after the first doping. Meanwhile, regarding the active layer 230 of the second thin-film transistor TR2, ion implantation with a first doping concentration can be performed. According to one embodiment of this disclosure, the first doping can be performed by ion implantation. In the active layer 130 of the first thin-film transistor TR1, the first doped ions or dopant can be masked by the gate electrode 150, and the first doped dopant may not be formed on the active layer 130 of the first thin-film transistor TR1. Therefore, the active layer 130 of the first thin-film transistor TR1 can have an undoped state concentration, which can be the initial dopant concentration before doping the active layer 130 of the first thin-film transistor TR1.

[0089] Specifically, the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be ion implanted at a first doping concentration, for example, the dopant concentration condition of the first doping can be 1e15 to 4e15 ions / cm³. 3 The conditions are as follows, and the dopant used in the first doping may include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H).

[0090] The doping concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, which are first doped, can be equal to or greater than the doping concentrations of the first and second intermediate portions 232a and 232b, and the doping concentrations of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be equal to or greater than the concentration of the channel portion 231. Except for the boundaries adjacent to the first and second intermediate portions 232a and 232b, the doping concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be greater than the doping concentrations of the first and second intermediate portions 232a and 232b. Except for the boundaries adjacent to the channel portion 231, the doping concentrations of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be greater than the doping concentration of the channel portion 231. Figure 3 As shown, the doping concentration of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be increased as they become closer to the first and second conductor portions 233a and 233b.

[0091] For ease of explanation, it is shown that the dopant concentration of the intermediate portions 232a and 232b of the second thin-film transistor TR2 varies linearly between the channel portion 231 and the first and second conductor portions 233a and 233b. However, the dopant concentration of the intermediate portions 232a and 232b of the second thin-film transistor TR2 can be a streamlined curve, a logarithmic curve, or an exponential curve showing a dopant concentration gradient.

[0092] refer to Figure 4 The first thin-film transistor TR1 and the second thin-film transistor TR2 of the thin-film transistor array 100 can be jointly subjected to a second doping. In this case, for the process of performing the second doping on the thin-film transistor array 100, the gate electrode 150 of the first thin-film transistor TR1 can be patterned to expose the first and second conductor portions 133a and 133b. According to one embodiment of this disclosure, the second doping can be performed under the same acceleration energy conditions as the first doping.

[0093] The active layer 130 of the first thin-film transistor TR1 can be ion-implanted at a second doping concentration, and the active layer 230 of the second thin-film transistor TR2 can be ion-implanted at a second doping concentration. According to one embodiment of this disclosure, the second doping can be performed by ion implantation.

[0094] Specifically, ion implantation can be performed on the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 at a second doping concentration. For example, the dopant concentration conditions for the second doping can be from 2e14 to 8e14 ions / cm³. 3 The process is performed under specific conditions, and the dopant used in the second doping may include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H). The dopant used in the second doping may be the same as or different from the dopant used in the first doping.

[0095] Specifically, ion implantation can be performed on the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 at a second doping concentration. For example, the dopant concentration condition for the second doping can be 1e15 to 4e15 ions / cm³. 3 The conditions are as follows, and the dopant used in the second doping may include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H).

[0096] The doping concentrations of the first and second conductive portions 133a and 133b of the first thin-film transistor TR1, which are second-doped, can be equal to or greater than the doping concentrations of the first and second intermediate portions 132a and 132b, and the doping concentrations of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 can be equal to or greater than the concentration of the channel portion 131. Except for the boundaries adjacent to the first and second intermediate portions 132a and 132b, the doping concentrations of the first and second conductive portions 133a and 133b of the first thin-film transistor TR1 can be greater than the doping concentrations of the first and second intermediate portions 132a and 132b. Except for the boundaries adjacent to the channel portion 131, the doping concentrations of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 can be greater than the doping concentration of the channel portion 131. Figure 4As shown, the doping concentration of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 can be increased as they become closer to the first and second conductor portions 133a and 133b.

[0097] For ease of explanation, it is shown that the dopant concentration of the intermediate portions 132a and 132b of the first thin-film transistor TR1 varies linearly between the channel portion 131 and the first and second conductor portions 133a and 133b. However, the dopant concentration of the intermediate portions 132a and 132b of the first thin-film transistor TR1 can be a streamlined curve, a logarithmic curve, or an exponential curve showing a dopant concentration gradient.

[0098] The doping concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, which are second-doped, can be equal to or greater than the doping concentrations of the first and second intermediate portions 232a and 232b. The doping concentrations of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be equal to or greater than the concentration of the channel portion 231. Except for the boundaries adjacent to the first and second intermediate portions 232a and 232b, the doping concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be greater than the doping concentrations of the first and second intermediate portions 232a and 232b. Except for the boundaries adjacent to the channel portion 231, the doping concentrations of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be greater than the doping concentration of the channel portion 231. (As...) Figure 4 As shown, the doping concentration of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2 can be increased as they become closer to the first and second conductor portions 233a and 233b.

[0099] For ease of explanation, it is shown that the dopant concentration of the intermediate portions 232a and 232b of the second thin-film transistor TR2 varies linearly between the channel portion 231 and the first and second conductor portions 233a and 233b. However, the dopant concentration of the intermediate portions 232a and 232b of the second thin-film transistor TR2 can be a streamlined curve, a logarithmic curve, or an exponential curve showing a dopant concentration gradient.

[0100] Figure 5 This is a graph comparing the first doping concentration, the second doping concentration, and the total doping concentration of the thin-film transistor array disclosed herein. Figure 5 The total doping concentration in is Figure 3 and Figure 4 The sum of the first and second doping concentrations described in the text.

[0101] The total doping concentration of the active layer 130 of the first thin-film transistor TR1 and the active layer 230 of the second thin-film transistor TR2 can be determined by... Figure 3 and Figure 4 The first and second doping shown are used to determine this.

[0102] Since the first doping ion implantation process performed on the active layer 130 of the first thin-film transistor TR1 is masked by the gate electrode 150, ion implantation of the active layer 130 of the first thin-film transistor TR1 can be performed solely by the second doping. Therefore, the total doping concentration of the active layer 130 of the first thin-film transistor TR1 can be determined solely by the second doping, and the total doping concentration of the active layer 130 of the first thin-film transistor TR1 can have the same concentration as the second doping concentration.

[0103] Since the active layer 230 of the second thin film transistor TR2 is ion implanted through the first doping and the second doping, the total doping concentration of the active layer 230 of the second thin film transistor TR2 is determined by the sum of the first doping concentration and the second doping concentration.

[0104] According to one embodiment of this disclosure, the total doping concentration of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 may be less than the total doping concentration of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, and the total doping concentration of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 may be less than the total doping concentration of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2, and the total doping concentration of the channel portion 131 of the first thin-film transistor TR1 may be the same as the total doping concentration of the channel portion 231 of the second thin-film transistor TR2.

[0105] Figure 6 The resistivity of the first and second thin-film transistors of a thin-film transistor array according to an embodiment of the present disclosure is shown.

[0106] refer to Figure 6 With respect to the first thin-film transistor TR1 in the thin-film transistor array, the resistivity decreases uniformly along the direction from the channel portion 131 toward the first and second conductor portions 133a and 133b. With respect to the second thin-film transistor TR2, the resistivity decreases uniformly along the direction from the channel portion 231 toward the first and second conductor portions 233a and 233b.

[0107] According to one embodiment of this disclosure, the resistivity of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can be higher than the resistivity of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, and can be inversely proportional to the total doping concentration of the active layer 130 of the first thin-film transistor TR1 and the active layer 230 of the second thin-film transistor TR2. For example... Figure 5 As shown, the conductivity of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be proportional to the total doping concentration of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2. The conductivity of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can refer to the conductivity or mobility of the thin-film transistor. Therefore, the resistivity of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can have a value that is inversely proportional to the total doping concentration of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2.

[0108] Figure 7 It is a graph of dopant concentration based on dopant doping depths set under various conditions. Figure 7 In this process, an ion implantation process for doping is performed on a planarization film on which the first thin-film transistor TR1 and the second thin-film transistor TR2 are not formed. The planarization film is prepared by forming a buffer layer 120 on the substrate, a gate insulating film 140 on the buffer layer 120, and an interlayer insulating film 160 on the gate insulating film 140. The dopant used in the ion implantation process is boron (B), the acceleration energy is set to 40 keV, and the doping concentration of boron (B) is changed to 1E13 ions / cm³. 3 1E14 ions / cm 3 and 1E15 ions / cm 3 The conditions. Figure 7 In the diagram, the horizontal axis represents the depth of the surface at a distance of 160° from the interlayer insulating film, and the vertical axis represents the number of ions measured by secondary ion mass spectrometry (SIMS). Figure 7 In the middle, the solid line shows the value set at 1E13 ions / cm. 3 The doping concentration of boron B is shown by the dashed line, which is set to 1E14 ions / cm³. 3The doping concentration of boron B is shown by the dashed line, which indicates a doping concentration set to 1E15 ions / cm³. 3 The doping concentration of boron B.

[0109] refer to Figure 7 At 1E13 ions / cm 3 1E14 ions / cm 3 and 1E15 ions / cm 3 Under the specified doping concentration conditions, multiple boron (B) atoms were observed at the interface between the interlayer insulating film 160 and the gate insulating film 140, with the maximum concentration peak of boron (B) observed at the interface between the buffer layer 120 and the gate insulating film 140. Figure 7 The results are applied Figure 1 When using thin-film transistor arrays, the maximum concentration peak of boron B corresponds to... Figure 7 The active layer 130 is formed on the buffer layer 120 under the boron B dopant ion implantation conditions set in the conditions. Therefore, when under the conditions... Figure 7 When the ion implantation process is performed under the ion implantation conditions set in the present disclosure, the dopant of the ion implantation process is formed on the active layer 130 of the first thin film transistor TR1 and the active layer 230 of the second thin film transistor TR2 of the thin film transistor array 100 according to the present disclosure.

[0110] Reference was obtained by using secondary ion mass spectrometry (SIMS) at 1E13 ions / cm² based on standard samples. 3 1E14 ions / cm 3 and 1E15 ions / cm 3 The data was obtained by converting the number of ions counted under the dopant doping concentration condition into the atomic percentage (at%) in the active layer 130, when the dopant doping concentration was 1E14 ions / cm³. 3 When performing boron B doping under certain conditions, the concentration of boron B contained in the active layer 130 is approximately 0.01 to 0.1 at%, and when the concentration is 1E15 ions / cm², the concentration of boron B is approximately 0.01 to 0.1 at%. 3 When boron B doping is performed under certain conditions, the concentration of boron B in the active layer 130 is approximately 0.1 to 0.2 at%.

[0111] Figure 8 This is a schematic diagram showing the conductor penetration depth ΔL in the middle section.

[0112] exist Figure 8 In the diagram, the total length of the middle portions 132a and 132b of the active layer 130 overlapping with the gate electrode 150 and the channel portion 131 is denoted as "L". 理想 ", and when there are no first and second intermediate portions 132a and 132b next to the first and second conductor portions 133a and 133b, "L 理想"It can refer to the ideal length of the channel section."

[0113] Next, the lengths of the first and second intermediate portions 132a and 132b are denoted as “ΔL”, and the first and second intermediate portions 132a and 132b are prepared by diffusion of dopants in the first and second conductor portions 133a and 133b, so “ΔL” represents a reduction in the channel length of the active layer 130. Alternatively, the length “ΔL” of the first and second intermediate portions 132a and 132b can represent the degree of reduction in channel length caused by the diffusion of dopants in the first and second conductor portions 133a and 133b.

[0114] Therefore, the ideal length L of the channel section 理想 The length ΔL of the first and second intermediate portions 132a and 132b can be reduced, and the length of the reduced channel portion can be defined as the effective channel length L. eff .

[0115] As the length ΔL of the first and second intermediate portions 132a and 132b increases, the effective channel length L eff It can be reduced. Simultaneously, when the length ΔL of the first and second intermediate portions 132a and 132b is shortened, the effective channel length L... eff It can be increased.

[0116] The lengths ΔL of the first and second intermediate portions 132a and 132b can be set to be proportional to the dopant concentrations performed in the first and second conductor portions 133a and 133b. For example, if the dopant concentrations of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 are set to be lower than the dopant concentrations of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2, then the lengths ΔL of the first and second intermediate portions 132a and 132b of the first thin-film transistor TR1 can be smaller than the lengths ΔL of the first and second intermediate portions 232a and 232b of the second thin-film transistor TR2. As a result, the effective channel length L of the first thin-film transistor TR1 is greater than the effective channel length of the second thin-film transistor TR2. eff It can be increased.

[0117] In this case, the effective channel length L of the active layer 230 of the second thin-film transistor TR2 is... eff In comparison, the effective channel length L of the active layer 130 of the first thin-film transistor TR1 is... eff It can have a relatively long length. Therefore, if the effective channel length L is relatively long... effThe active layer 130 is applied to thin-film transistors with short channel lengths rather than those requiring electrical characteristics such as high on-state current and high mobility, thus resulting in a relatively long effective channel length L. eff The short-channel effects (e.g., hot carrier stress HCS and threshold voltage roll-off) generated in thin-film transistors with short channel lengths can be reduced.

[0118] On the other hand, the effective channel length L of the active layer 130 of the first thin-film transistor TR1 eff In comparison, the effective channel length L of the active layer 230 of the second thin-film transistor TR2 is... eff It can have a relatively short length. Therefore, the threshold voltage can be shifted in the negative (-) direction, thereby reducing the threshold voltage, and the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can have relatively low resistance and high mobility. Therefore, the second thin-film transistor TR2 can satisfy the electrical characteristics of high on-current and high mobility.

[0119] Figures 9A to 9F A method for manufacturing a thin-film transistor array according to the present disclosure is shown.

[0120] refer to Figure 9A A buffer layer 120 is formed together on the first thin-film transistor TR1 and the second thin-film transistor TR2 on the substrate 110. Then, the active layer 130 of the first thin-film transistor TR1 and the active layer 230 of the second thin-film transistor TR2 are formed on the buffer layer 120 and can be patterned to correspond to predetermined portions. Herein, the predetermined portions can partially overlap with the gate electrode 150 and the first and second electrodes 171 and 172. Then, a gate insulating film 140 can be disposed on the buffer layer 120, which can be configured to cover the active layer 130 of the first thin-film transistor TR1 and the active layer 230 of the second thin-film transistor TR2, and can be formed together with respect to the first thin-film transistor TR1 and the second thin-film transistor TR2. Next, gate electrode material layers are formed on the first and second thin-film transistors TR1 and TR2, and the first and second thin-film transistors TR1 and TR2 are patterned to have different gate electrode patterns. Specifically, the gate electrode 150 of the first thin-film transistor TR1 can be configured to overlap with the entire active layer 130, and the gate electrode 250 of the second thin-film transistor TR2 can be patterned to overlap with the channel portion 231 and the first and second intermediate portions 232a and 232b of the active layer 230.

[0121] refer to Figure 9B , for Figure 9A The first and second thin-film transistors TR1 and TR2 were fabricated and subjected to a first doping process.

[0122] According to one embodiment of this disclosure, a first doping can be performed by ion implantation, and the dopant used in the first doping can include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H). For example, the ion implantation process conditions for the first doping dopant can be from 1e15 to 4e15 ions / cm². 3 The process is performed under specific conditions, and the acceleration energy of the first doped dopant and the dopant ion beam current can be adjusted within a range of process conditions generally known to those skilled in the art. Specifically, the acceleration energy of the first doped dopant can be set to an acceleration energy capable of achieving doping of the dopant on the active layers 130 and 230 of the first and second thin-film transistors TR1 and TR2, and can be varied according to the thickness of the gate insulating film 140. For example, if the thickness of the gate insulating film 140 is large, the acceleration energy of the first doped dopant can be increased, and if the thickness of the gate insulating film 140 is small, the acceleration energy of the first doped dopant can be decreased.

[0123] The active layer 130 of the first thin-film transistor TR1 can be masked by a gate electrode 150, which overlaps with and is provided on the active layer 130. Furthermore, the first dopant may not be formed on the active layer 130 of the first thin-film transistor TR1. Therefore, the active layer 130 of the first thin-film transistor TR1 can have an undoped concentration, which can be the initial dopant concentration before doping the active layer 130 of the first thin-film transistor TR1.

[0124] Regarding the active layer 230 of the second thin-film transistor TR2, apart from the channel portion 231 overlapping with the gate electrode 250 and the first and second intermediate portions 232a and 232b, the first and second conductor portions 233a and 233b can be ion-implanted by a first doping. After the first doping, the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can have a uniform doping concentration. The first and second intermediate portions 232a and 232b adjacent to the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be formed by dopant diffused from the first and second conductor portions 233a and 233b. The first and second intermediate portions 232a and 232b can be provided in such a way that their dopant concentration decreases from the first and second conductor portions 233a and 233b toward the channel portion 231. The channel portion 231 can be defined as the portion of the first and second conductor portions 233a and 233b where the dopant does not diffuse. Therefore, when the active layer 230 is deposited, the channel portion 231 can have the same dopant concentration as the initial concentration of the dopant or the initial concentration of the impurities.

[0125] refer to Figure 9CThe gate electrode 150 of the first thin-film transistor TR1 can be patterned to correspond to a predetermined portion. The gate electrode 150 of the first thin-film transistor TR1 can be patterned to overlap with the channel portion 131 of the active layer 130 and the first and second intermediate portions 132a and 132b.

[0126] refer to Figure 9D , for Figure 9C The first and second thin-film transistors TR1 and TR2 were fabricated and subjected to a second doping process.

[0127] According to one embodiment of this disclosure, a second doping can be performed by ion implantation, wherein the dopant used in the second doping may include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H). For example, the ion implantation process conditions for the second doping dopant can be from 2e14 to 8e14 ions / cm³. 3 The process is performed under specific conditions, and the acceleration energy and dopant ion beam current of the second doped dopant can be adjusted within the range of process conditions generally known to those skilled in the art. For example, except for the dopant concentration conditions, the ion implantation process conditions for the second doping can be set to be the same as those for the first doping.

[0128] Regarding the active layer 130 of the first thin-film transistor TR1, in addition to the channel portion 131 overlapping with the gate electrode 150 and the first and second intermediate portions 132a and 132b, the first and second conductor portions 133a and 133b can be ion-implanted by a second doping. After the second doping, the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can have a uniform doping concentration. The first and second intermediate portions 132a and 132b adjacent to the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 can be formed by dopant diffused from the first and second conductor portions 133a and 133b. The first and second intermediate portions 132a and 132b can be provided in such a way that their dopant concentration decreases from the first and second conductor portions 133a and 133b toward the channel portion 131. The channel portion 131 can be defined as the portion of the first and second conductor portions 133a and 133b where the dopant does not diffuse. Therefore, when the active layer 130 is deposited, the channel portion 131 can have the same dopant concentration as the initial concentration of the dopant or the initial concentration of the impurities.

[0129] Regarding the active layer 230 of the second thin-film transistor TR2, in addition to the channel portion 231 overlapping with the gate electrode 250 and the first and second intermediate portions 232a and 232b, the first and second conductor portions 233a and 233b can be ion-implanted by a second doping. After the second doping, the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can have a uniform doping concentration. The first and second intermediate portions 232a and 232b adjacent to the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 can be formed by dopant diffused from the first and second conductor portions 233a and 233b. The first and second intermediate portions 232a and 232b can be provided in such a way that their dopant concentration decreases from the first and second conductor portions 233a and 233b toward the channel portion 231. The channel portion 231 can be defined as the portion of the first and second conductor portions 233a and 233b where the dopant does not diffuse. Therefore, when the active layer 230 is deposited, the channel portion 231 can have the same dopant concentration as the initial concentration of the dopant or the initial concentration of the impurities.

[0130] refer to Figure 9E The total doping concentration of the active layer 130 of the first thin-film transistor TR1 and the total doping concentration of the active layer 230 of the second thin-film transistor TR2 can be determined by the first doping and the second doping as described above.

[0131] Since the active layer 130 of the first thin-film transistor TR1 is ion implanted through the second doping rather than the first doping, the total doping concentration of the active layer 130 of the first thin-film transistor TR1 can be determined solely by the second doping, and the total doping concentration of the active layer 130 of the first thin-film transistor TR1 can have the same concentration as the second doping concentration.

[0132] Since the active layer 230 of the second thin-film transistor TR2 is ion implanted through the first doping and the second doping, the total doping concentration of the active layer 230 of the second thin-film transistor TR2 can be determined by the sum of the first doping concentration and the second doping concentration.

[0133] At this time, the dopant concentration of the first and second conductor portions 133a and 133b of the first thin-film transistor TR1 may be 0.01 to 0.8 at% relative to the active layer 130, and the dopant concentration of the first and second conductor portions 233a and 233b of the second thin-film transistor TR2 may be 0.1 to 0.8 at% relative to the active layer 230.

[0134] refer to Figure 9FWith regard to the first thin-film transistor TR1, an interlayer insulating film 160 is disposed on the gate electrode 150 and the gate insulating film 140. A first electrode 171 and a second electrode 172 are disposed on the interlayer insulating film 160, and the first electrode 171 and the second electrode 172 are connected to the active layer 130 through a first contact hole CH1 and a second contact hole CH2, respectively. The second thin-film transistor TR2 can be applied using the same process as the first thin-film transistor TR1. As a result, a thin-film transistor array 100 according to an embodiment of the present disclosure can be manufactured.

[0135] Figure 10 This is a schematic diagram of a display device according to another embodiment of the present disclosure.

[0136] like Figure 10 As shown, a display device 500 according to another embodiment of the present disclosure includes a display panel 310, a gate driver 320, a data driver 330, and a controller 340.

[0137] Gate lines GL and data lines DL are disposed on the display panel 310, and pixels P are disposed in the corresponding intersection areas of gate lines GL and data lines DL. Images are displayed by driving pixels P.

[0138] The controller 340 controls the gate driver 320 and the data driver 330.

[0139] The controller 340 outputs a gate control signal GCS for controlling the gate driver 320 and a data control signal DCS for controlling the data driver 330 using signals supplied from an external system (not shown). Furthermore, the controller 340 samples input video data from the external system, rearranges the sampled input video data, and supplies the rearranged digital video data (RGB) to the data driver 330.

[0140] The gate control signal GCS includes the gate start pulse GSP, the gate shift clock GSC, the gate output enable signal GOE, the start signal Vst, and the gate clock GCLK. Furthermore, control signals for controlling the shift register can be included in the gate control signal GCS.

[0141] The data control signal DCS includes the source start pulse SSP, the source shift clock signal SSC, the source output enable signal SOE, and the polarity control signal POL.

[0142] The data driver 330 supplies data voltage to the data line DL of the display panel 310. Specifically, the data driver 330 converts the video data RGB input from the controller 340 into analog data voltage and supplies that data voltage to the data line DL.

[0143] Gate driver 320 may include shift register 350.

[0144] The shift register 350 supplies gate pulses sequentially to the gate line GL during a frame using a start signal and a gate clock transmitted from the controller 340. Here, a frame refers to the period during which one image is output through the display panel 310. The gate pulses have an on-state voltage capable of turning on the switching device (thin-film transistor) located in the pixel P.

[0145] Furthermore, during the remaining period of a frame when no gate pulse is supplied, shift register 350 supplies a gate cutoff signal to gate line GL that enables the switching device to turn off. Hereinafter, the gate pulse and the gate cutoff signal will be collectively referred to as the scan signal SS or Scan.

[0146] According to embodiments of this disclosure, the gate driver 320 can be mounted on the base substrate 110. As described above, the structure in which the gate driver 320 is directly mounted on the base substrate 110 is referred to as a gate in-panel (GIP) structure.

[0147] Figure 11 yes Figure 10 The circuit diagram for any pixel P. Figure 12 yes Figure 11 The planar image of pixel P, and Figure 13 It is along Figure 12 Cross-sectional view of line III-III'.

[0148] Figure 11 The circuit diagram is an equivalent circuit diagram of pixel P of the display device 500 including an organic light-emitting diode (OLED). Pixel P includes a display device 710 and a pixel driver PDC for driving the display device 710.

[0149] According to another embodiment of this disclosure, the display device includes a pixel driver PDC and a display device 710. The pixel driver PDC includes a first thin-film transistor TR1 and a second thin-film transistor TR2. The first thin-film transistor TR1 may include the thin-film transistors described above.

[0150] According to another embodiment of this disclosure, the first thin-film transistor TR1 is a driving transistor, and the second thin-film transistor TR2 is a switching transistor.

[0151] The second thin-film transistor TR2 is connected to the gate line GL and the data line DL, and is turned on or off by the scan signal SS supplied through the gate line GL.

[0152] The data line DL provides the data voltage V to the pixel driver PDC. 数据 And the second thin-film transistor TR2 controls the data voltage V 数据The application of.

[0153] The driving power line PL provides a driving voltage Vdd to the display device 710, and the first thin-film transistor TR1 controls the driving voltage Vdd. The driving voltage Vdd is the pixel driving voltage used to drive the organic light-emitting diode (OLED) corresponding to the display device 710.

[0154] When the second thin-film transistor TR2 is turned on by the scan signal SS applied from the gate driver through the gate line GL, the data voltage V supplied through the data line DL... 数据 It is supplied to the gate electrode of the first thin-film transistor TR1 connected to the display device 710. Data voltage V 数据 The storage capacitor C1 is charged between the gate electrode and the source electrode of the first thin-film transistor TR1.

[0155] The amount of current supplied to the organic light-emitting diode (OLED) corresponding to the display device 710 via the first thin-film transistor TR1 is determined by the data voltage V. 数据 This allows control over the grayscale of the light emitted from the display device 710.

[0156] refer to Figure 12 and Figure 13 The first thin-film transistor TR1 and the second thin-film transistor TR2 are disposed on the substrate 110.

[0157] The substrate 110 can be a glass substrate, a curable or flexible thin-film glass substrate, a plastic substrate, or a silicon wafer substrate. If plastic is used for the substrate 110, a flexible transparent plastic, such as polyimide, can be used. If the substrate 110 is formed of polyimide, a heat-resistant polyimide that can withstand high temperatures can be used, taking into account the high-temperature deposition process on the substrate 110.

[0158] Then, light shielding layers 111 and 211 can be disposed on substrate 110.

[0159] Light shielding layers 111 and 211 block external light incident from the outside, thereby protecting active layers A1 and A2 and the first and second thin-film transistors TR1 and TR2. Light shielding layers 111 and 211 can be made of materials with light-blocking or light-reflecting properties. Light shielding layers 111 and 211 may include a lower light shielding layer and an upper light shielding layer. Light shielding layers 111 and 211 may not be disposed on the entire surface of substrate 110, but may be disposed on at least a portion overlapping with thin-film transistors TR1 and TR2 or active layer 130.

[0160] The buffer layer 120 is disposed on the light shielding layers 111 and 211 and the substrate 110.

[0161] By depositing a silicon oxide film SiO x The buffer layer 120 may be formed as a multilayer structure, comprising at least one of silicon nitride (SiN) and silicon oxynitride (SiON). Other components of the thin-film transistors TR1 and TR2, including the gate electrodes G1 and G2 of the first and second thin-film transistors TR1 and TR2 (described below), may be disposed on the buffer layer 120.

[0162] The active layer A1 of the first thin-film transistor TR1 and the active layer A2 of the second thin-film transistor TR2 are disposed on the buffer layer 120.

[0163] The active layers A1 and A2 of the first thin-film transistor TR1 and the second thin-film transistor TR2 can be configured to overlap with the gate electrodes G1 and G2, the first electrodes S1 and S2, and the second electrodes D1 and D2 of the first thin-film transistor TR1 and the second thin-film transistor TR2, respectively. For example... Figure 1 As shown, each of the active layers A1 and A2 of the first thin-film transistor TR1 and the second thin-film transistor TR2 includes channel portions 131 and 231, first conductor portions 133a and 233a, and second conductor portions 133b and 233b. The first conductor portions 133a and 233a are disposed on one side of the channel portions 131 and 231, and the second conductor portions 133b and 233b are disposed on the other side of the channel portions 131 and 231. The first conductor portions 133a and 233a and the second conductor portions 133b and 233b of the first thin-film transistor TR1 and the second thin-film transistor TR2 can be defined as active layers A1 and A2 that do not overlap with the gate electrodes G1 and G2. Furthermore, the active layer A1 of the first thin-film transistor TR1 also includes a first intermediate portion 132a between the channel portion 131 and the first conductor portion 133a, and the active layer A2 of the second thin-film transistor TR2 also includes a second intermediate portion 132b between the channel portion 131 and the second conductor portion 133b.

[0164] A gate insulating film 140 is disposed on the active layer A1 of the first thin-film transistor TR1, the active layer A2 of the second thin-film transistor TR2, and the buffer layer 120, and is disposed between the active layer A1 and the gate electrode G1 of the first thin-film transistor TR1, and between the active layer A2 and the gate electrode G2 of the second thin-film transistor TR2, thereby protecting the active layer A1 of the first thin-film transistor TR1 and the active layer A2 of the second thin-film transistor TR2. The gate insulating film 140 may include a silicon nitride film (SiN). x or silicon oxide film SiO x However, it is not limited to this. The gate insulating film 140 may have a single-layer structure or a multi-layer structure.

[0165] The first capacitor electrode C11 of the storage capacitor C1 is disposed on the gate insulating film 140. The first capacitor electrode C11 can be connected to the first gate electrode G1 of the first thin-film transistor TR1. The first capacitor electrode C11 can be integrated into the first gate electrode G1 of the first thin-film transistor TR1 to form a single unit.

[0166] The gate electrode G1 of the first thin-film transistor TR1 and the gate electrode G2 of the second thin-film transistor TR2 are disposed on the gate insulating film 140. The gate electrode G1 of the first thin-film transistor TR1 and the gate electrode G2 of the second thin-film transistor TR2 overlap with the channel portions of the active layers A1 and A2.

[0167] The gate electrode G1 of the first thin-film transistor TR1 and the gate electrode G2 of the second thin-film transistor TR2 may comprise at least one of the following: aluminum-based metal material (e.g., aluminum Al or aluminum alloy), silver-based metal material (e.g., silver Ag or silver alloy), copper-based metal material (e.g., copper Cu or copper alloy), molybdenum-based metal material (e.g., molybdenum Mo or molybdenum alloy), chromium Cr, tantalum Ta, neodymium Nd, and titanium Ti. Each of the gate electrode G1 of the first thin-film transistor TR1 and the gate electrode G2 of the second thin-film transistor TR2 may have a multilayer structure comprising at least two conductive layers with different physical properties.

[0168] An interlayer insulating film 160 is disposed on the gate electrode 150 and the gate insulating film 140.

[0169] Interlayer insulating film 160 includes silicon oxide film SiO x or silicon nitride film SiN x Furthermore, it can protect the thin-film transistors. To allow the active layer A1 of the first thin-film transistor TR1 and the active layer A2 of the second thin-film transistor TR2 to contact the source and drain electrodes respectively, the portion of the interlayer insulating film 160 corresponding to the contact holes can be removed. The source electrode S1 and drain electrode D1 of the first thin-film transistor TR1 are disposed on the interlayer insulating film 160, and the source electrode S2 and drain electrode D2 of the second thin-film transistor TR2 are disposed on the interlayer insulating film 160. The data line DL, the drive power line PL, and the second capacitor electrode C12 of the storage capacitor C1 can be disposed on the interlayer insulating film 160.

[0170] The drive power line PL can be extended and can be the drain electrode D1 of the first thin-film transistor TR1. The drain electrode D1 of the first thin-film transistor TR1 is connected to the active layer A1 through the first contact hole H1.

[0171] The source electrode S1 of the first thin-film transistor TR1 is connected to the active layer A1 through the second contact hole H2, and can be connected to the optical shielding layer 111 through the third contact hole H3.

[0172] The source electrode S1 of the first thin-film transistor TR1 and the second capacitor electrode C12 are interconnected. The source electrode S1 and the second capacitor electrode C12 of the first thin-film transistor TR1 can be integrally formed into one unit.

[0173] The data line DL can be extended and can be the source electrode S2 of the second thin-film transistor TR2. The source electrode S2 of the second thin-film transistor TR2 can be connected to the active layer A2 through the fifth contact hole H5.

[0174] The drain electrode D2 of the second thin-film transistor TR2 can be connected to the active layer A2 through the sixth contact hole H6, and can be connected to the first capacitor electrode C11 through the fourth contact hole H4, and can be connected to the optical shielding layer 211 through the seventh contact hole H7.

[0175] A planarization layer 180 is disposed on the source electrode S1 and the first drain electrode D1 of the first thin film transistor TR1, the source electrode S2 and the second drain electrode D2 of the second thin film transistor TR2, the data line DL, the drive power line PL, and the second capacitor electrode C12.

[0176] The planarization layer 180 is formed of an insulating layer and is configured to planarize the upper portions of the first thin-film transistor TR1 and the second thin-film transistor TR2, and to protect the first thin-film transistor TR1 and the second thin-film transistor TR2.

[0177] The first pixel electrode 711 of the display device 710 is disposed on the planarization layer 180. The first pixel electrode 711 is in contact with the second capacitor electrode C12 through an eighth contact hole H8 formed in the planarization layer 180. As a result, the first pixel electrode 711 can be connected to the source electrode S1 of the first thin film transistor TR1. The eighth contact hole H8 formed in the planarization layer 180 and connected to the first pixel electrode 711 can be formed in a non-opening portion of the display device 710, while overlapping with the embankment layer 750.

[0178] The embankment 750 is disposed at the edge of the first pixel electrode 711. The embankment 750 defines the light-emitting area of ​​the display device 710.

[0179] An organic light-emitting layer 712 is disposed on a first pixel electrode 711, and a second pixel electrode 713 is disposed on the organic light-emitting layer 712. Accordingly, a display device 710 is configured. Figure 12 and Figure 13 The display device 710 shown is an organic light-emitting diode (OLED). Accordingly, the display device 500 according to another embodiment of this disclosure is an organic light-emitting display device.

[0180] Figure 14 This is a circuit diagram of any pixel of a display device according to another embodiment of the present disclosure.

[0181] Figure 14 The pixel P of the display device 600 shown includes an organic light-emitting diode (OLED) corresponding to the display device 710, and a pixel driver PDC for driving the display device 710. The display device 710 is connected to the pixel driver PDC.

[0182] In pixel P, there are signal lines DL, GL, PL, RL and SCL that supply signals to pixel driver PDC.

[0183] Supply data voltage V to data line DL 数据 The system supplies a scan signal SS to the gate line GL, a drive voltage Vdd for driving the pixel to the drive power line PL, a reference voltage Vref to the reference line RL, and a sensing control signal SCS to the sensing control line SCL.

[0184] For example, the pixel driver PDC includes a second thin-film transistor TR2 (switching transistor) connected to the gate line GL and the data line DL, for adjusting according to the data voltage V transmitted through the second thin-film transistor TR2. 数据 A first thin-film transistor TR1 (driving transistor) is used to control the level of the current output to the display device 710, and a third thin-film transistor TR3 (reference transistor) is used to sense the characteristics of the first thin-film transistor TR1.

[0185] The storage capacitor C1 is disposed between the gate electrode of the first thin-film transistor TR1 and the display device 710.

[0186] The second thin-film transistor TR2 is turned on by the scan signal SS supplied to the gate line GL, and the turned-on second thin-film transistor TR2 supplies the data voltage V to the data line DL. 数据 Transmitted to the gate electrode of the first thin-film transistor TR1.

[0187] The third thin-film transistor TR3 is connected to the reference line RL and the first node n1 between the first thin-film transistor TR1 and the display device 710, and is turned on or off by the sensing control signal SCS, and senses the characteristics of the first thin-film transistor TR1 corresponding to the driving transistor during the sensing period.

[0188] A second node n2, connected to the gate electrode of the first thin-film transistor TR1, is connected to the second thin-film transistor TR2. A storage capacitor C1 is formed between the second node n2 and the first node n1.

[0189] When the second thin-film transistor TR2 is turned on, the data voltage V supplied through the data line DL is... 数据 The data voltage V is supplied to the gate electrode of the first thin-film transistor TR1. 数据The first capacitor C1 is charged between the gate electrode and the source electrode of the first thin-film transistor TR1.

[0190] When the first thin-film transistor TR1 is turned on, the driving voltage Vdd used to drive the pixel supplies current to the display device 710 through the first thin-film transistor TR1, thereby emitting light from the display device 710.

[0191] Figure 15 This is a circuit diagram of any pixel of a display device according to another embodiment of the present disclosure.

[0192] Figure 15 The pixel P of the display device 700 shown includes an organic light-emitting diode (OLED) corresponding to the display device 710, and a pixel driver PDC for driving the display device 710. The display device 710 is connected to the pixel driver PDC.

[0193] The pixel driver PDC includes thin-film transistors TR1, TR2, TR3, and TR4.

[0194] In pixel P, there are signal lines DL, EL, GL, PL, SCL and RL that supply drive signals to pixel driver PDC.

[0195] and Figure 14 Compared to the pixel P, Figure 15 The pixel P also includes a transmit control line EL. The transmit control signal EM is supplied to the transmit control line EL.

[0196] In addition, with Figure 14 Compared to the pixel driver PDC, Figure 15 The pixel driver PDC also includes a fourth thin-film transistor TR4, which is a light-emitting control transistor used to control the emission timing of the first thin-film transistor TR1.

[0197] The storage capacitor C1 is disposed between the gate electrode of the first thin-film transistor TR1 and the display device 710.

[0198] The second thin-film transistor TR2 is turned on by the scan signal SS supplied to the gate line GL, and the data voltage V supplied to the data line DL is also turned on. 数据 Transmitted to the gate electrode of the first thin-film transistor TR1.

[0199] The third thin-film transistor TR3 is connected to the reference line RL and is turned on or off by the sensing control signal SCS, and senses the characteristics of the first thin-film transistor TR1 corresponding to the driving transistor during the sensing period.

[0200] The fourth thin-film transistor TR4 transmits the driving voltage Vdd to the first thin-film transistor TR1 or blocks the driving voltage Vdd according to the emission control signal EM. When the fourth thin-film transistor TR4 is turned on, current is supplied to the first thin-film transistor TR1, thereby emitting light from the display device 710.

[0201] In addition to the structures described above, the pixel driver PDC according to another embodiment of this disclosure can be formed in various structures. For example, the pixel driver PDC may include five or more thin-film transistors.

[0202] Accordingly, in a thin-film transistor array according to an embodiment of the present disclosure, the conductor portions of multiple transistors provided by the same scheme may have different resistances.

[0203] Furthermore, the thin-film transistor array according to one embodiment of the present disclosure can reduce short-channel effects (e.g., hot carrier stress HCS, threshold voltage roll-off) generated in thin-film transistors with short channel lengths, and can reduce the threshold voltage required in individual thin-film transistors for multiple thin-film transistors provided by the same scheme, and can optimize electrical characteristics such as mobility and on-state current.

[0204] Furthermore, in a thin-film transistor array according to one embodiment of the present disclosure, the active layers of multiple transistors provided by the same scheme may have different dopant concentrations.

[0205] It will be apparent to those skilled in the art that various substitutions, modifications, and variations are possible within the scope of this disclosure without departing from its spirit and scope. Therefore, the scope of this disclosure is defined by the following claims, and all changes or modifications derived from the meaning, scope, and equivalents of the claims should be interpreted as being included within the scope of this disclosure.

Claims

1. A thin-film transistor array, comprising: substrate; The first thin-film transistor is located on the substrate; as well as A second thin-film transistor located on the substrate. The first thin-film transistor includes a first active layer comprising an oxide semiconductor on the substrate and a first gate electrode above the first active layer. The first active layer includes a first channel portion, a first conductor portion, and a first intermediate portion located between the first channel portion and the first conductor portion. The second thin-film transistor includes a second active layer comprising an oxide semiconductor on the substrate and a second gate electrode above the second active layer. The second active layer includes a second channel portion, a second conductor portion, and a second intermediate portion located between the second channel portion and the second conductor portion, and The resistivity of the first conductor portion of the first thin-film transistor is higher than the resistivity of the second conductor portion of the second thin-film transistor. Wherein, the first intermediate portion overlaps with the first gate electrode, the second intermediate portion overlaps with the second gate electrode, and the doping concentration of the first intermediate portion is lower than that of the second intermediate portion.

2. The thin-film transistor array according to claim 1, in, The first gate electrode is spaced apart from the first active layer and overlaps with at least a portion of the first active layer. The first channel portion overlaps with the first gate electrode, while the first conductor portion does not overlap with the first gate electrode. The second gate electrode is spaced apart from the second active layer and overlaps with at least a portion of the second active layer, and The second channel portion overlaps with the second gate electrode, and the second conductor portion does not overlap with the second gate electrode.

3. The thin-film transistor array according to claim 1, wherein, The length of the first middle portion of the first thin-film transistor is shorter than the length of the second middle portion of the second thin-film transistor.

4. The thin-film transistor array according to claim 1, in, The first conductor portion and the first intermediate portion of the first active layer of the first thin-film transistor are doped with a dopant, and The second conductor portion and the second intermediate portion of the second active layer of the second thin-film transistor are doped with a dopant.

5. The thin-film transistor array according to claim 4, in, The first conductor portion of the first thin-film transistor has a first doping concentration, and the first channel portion has a second doping concentration lower than the first doping concentration. The second conductor portion of the second thin-film transistor has a third doping concentration, and the second channel portion has a fourth doping concentration lower than the third doping concentration.

6. The thin-film transistor array according to claim 5, in, As the first channel portion moves closer to the first conductor portion, the doping concentration of the first intermediate portion of the first thin-film transistor changes from the second doping concentration to the first doping concentration, and As the second thin-film transistor moves closer to the second conductor portion from the second channel portion, the doping concentration of the second intermediate portion changes from the fourth doping concentration to the third doping concentration.

7. The thin-film transistor array according to claim 5, wherein, The first doping concentration of the first conductor portion is lower than the second doping concentration of the second conductor portion.

8. The thin-film transistor array according to claim 4, wherein, The dopant includes at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H).

9. The thin-film transistor array according to claim 4, wherein, The dopant concentration of the first conductor portion of the first thin-film transistor is 0.01 to 0.8 at relative to the first active layer of the first thin-film transistor.

10. The thin-film transistor array according to claim 4, wherein, The dopant concentration of the second conductor portion of the second thin-film transistor is 0.1 to 0.8 at relative to the second active layer of the second thin-film transistor.

11. A display device comprising a thin-film transistor array, in, The thin-film transistor array includes: substrate; A first thin-film transistor located on the substrate; and A second thin-film transistor located on the substrate. The first thin-film transistor includes a first active layer comprising an oxide semiconductor on the substrate and a first gate electrode above the first active layer. The first active layer includes a first channel portion, a first conductor portion, and a first intermediate portion located between the first channel portion and the first conductor portion. The second thin-film transistor includes a second active layer comprising an oxide semiconductor on the substrate and a second gate electrode above the second active layer. The second active layer includes a second channel portion, a second conductor portion, and a second intermediate portion located between the second channel portion and the second conductor portion, and The resistivity of the first conductor portion of the first thin-film transistor is higher than the resistivity of the second conductor portion of the second thin-film transistor. Wherein, the first intermediate portion overlaps with the first gate electrode, the second intermediate portion overlaps with the second gate electrode, and the doping concentration of the first intermediate portion is lower than that of the second intermediate portion.

12. A method for manufacturing a thin-film transistor array, the thin-film transistor array comprising a first thin-film transistor and a second thin-film transistor located on a substrate, the manufacturing method comprising: A first active layer and a second active layer spaced apart from each other are formed on the substrate; A gate insulating film is formed to cover the first active layer and the second active layer; A first gate electrode is formed that overlaps with the first active layer, and a second gate electrode is formed that overlaps with a portion of the second active layer but does not overlap with one side or the other side of the second active layer; When the first gate electrode and the second gate electrode are used as masks, the first active layer and the second active layer are subjected to first doping; The first gate electrode is patterned so that it does not overlap with one side and the other side of the first active layer; as well as When the patterned first and second gate electrodes are used as masks, a second doping is performed on the first and second active layers. Wherein, the doping concentration of the first intermediate portion of the first active layer that overlaps with the first gate electrode is lower than the doping concentration of the second intermediate portion of the second active layer that overlaps with the second gate electrode.

13. The manufacturing method according to claim 12, wherein, The dopants for the first and second doping include at least one of boron (B), phosphorus (P), fluorine (F), and hydrogen (H).

14. The manufacturing method according to claim 12, in, The first active layer includes: The first channel portion that overlaps with the patterned first gate electrode; The first conductor portion that does not overlap with the patterned first gate electrode; and The first intermediate portion located between the first channel portion and the first conductor portion, and The second active layer includes: The second channel portion overlapping the second gate electrode; The second conductor portion that does not overlap with the second gate electrode; and The second intermediate portion is located between the second channel portion and the second conductor portion. The resistivity of the first conductor portion of the first active layer is higher than the resistivity of the second conductor portion of the second active layer.

15. The manufacturing method according to claim 14, in, The first middle portion of the first active layer overlaps with the patterned first gate electrode, and The second middle portion of the second active layer overlaps with the second gate electrode.

16. The manufacturing method according to claim 14, wherein, The length of the first middle portion of the first active layer is shorter than the length of the second middle portion of the second active layer.

17. The manufacturing method according to claim 14, in, The first conductor portion of the first active layer has a first doping concentration, and the first channel portion of the first active layer has a second doping concentration lower than the first doping concentration. The second conductor portion of the second active layer has a third doping concentration, and the second channel portion of the second active layer has a fourth doping concentration lower than the third doping concentration. Wherein, as the doping concentration of the first intermediate portion of the first active layer moves closer to the first conductor portion of the first active layer, the doping concentration changes from the second doping concentration to the first doping concentration, and As the second channel portion of the second active layer moves closer to the second conductor portion of the second active layer, the doping concentration of the second intermediate portion of the second active layer changes from the fourth doping concentration to the third doping concentration.

18. The manufacturing method according to claim 14, in, The dopant concentration of the first conductor portion of the first active layer is 0.01 to 0.8 at% relative to the first active layer, and The dopant concentration of the second conductor portion of the second active layer is 0.1 to 0.8 at relative to the second active layer.

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