半导体结构及其制备方法
By setting lightly doped regions and well regions of different conductivity types in the substrate, the barrier and turn-on voltage of the Schottky diode can be adjusted, solving the problems of low breakdown voltage and difficult voltage adjustment of traditional Schottky diodes, and improving the rectification performance of Schottky diodes.
CN115763532BActive Publication Date: 2026-07-17GTA SEMICON CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GTA SEMICON CO LTD
- Filing Date
- 2022-12-07
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Traditional high-voltage Schottky diodes have low integration density, low withstand voltage, and difficult-to-adjust turn-on voltage, which limits their applications.
Method used
By setting a lightly doped region of the first conductivity type and a well region of the second conductivity type in the substrate, the barrier and turn-on voltage of the Schottky diode are adjusted, and the on-resistance is increased to improve the reverse breakdown voltage capability.
Benefits of technology
This improved the breakdown voltage and adjusted the turn-on voltage of the Schottky diode, thereby enhancing the rectification effect of the device.
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Figure CN115763532B_ABST
Abstract
本公开涉及一种半导体结构及其制备方法。所述半导体结构包括衬底、第一导电类型的第一阱区、第二导电类型的第一阱区、第一导电类型的深阱区、第一导电类型的第二阱区、栅极结构、阴极以及阳极。其中，第一导电类型的第一阱区为轻掺杂区。第二导电类型的第一阱区至少位于第一导电类型的第一阱区内。第一导电类型的深阱区位于第一导电类型的第一阱区内，且延伸至第一导电类型的第一阱区下方。第一导电类型的第二阱区位于第一导电类型的深阱区内。栅极结构位于衬底的上表面。上述半导体结构可以调节肖特基二极管的开启电压，并且提高其耐压能力。
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