驱动电路和收发组件
By alternating the opening of the first and second switches in the drive circuit and using temperature compensation, the problem of slow switching speed of field-effect transistors in RF circuits is solved, achieving rapid state switching and improved RF signal transmission and reception performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENNAN CIRCUITS
- Filing Date
- 2021-09-03
- Publication Date
- 2026-07-17
AI Technical Summary
In existing RF circuits, the switching speed of field-effect transistors between different states is slow, which affects the RF signal transmission and reception performance of the transceiver components.
A driving circuit is employed, which provides rapid gate voltage switching by alternately turning on a first switch and a second switch. Temperature compensation is performed using a low-dropout linear regulator and a temperature signal, and the switching speed is improved by combining an accelerating capacitor.
This improves the switching speed of the field-effect transistor between different states, thereby enhancing the RF signal transmission and reception performance of the transceiver components.
Smart Images

Figure CN115765776B_ABST