Display device

Abstract

This invention relates to display devices. In particular, according to one aspect of this disclosure, a display device includes: a substrate including a display area and a non-display area; a first covering layer located above the substrate and including a base and a protrusion extending from the base; a first hydrogen barrier layer located on the top surface of the protrusion in the display area; a first electrode covering the base and the first hydrogen barrier layer; a dam located on a portion of the first electrode; an organic layer located on the first electrode and the dam; and a second electrode located on the organic layer.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0117619, filed September 3, 2021; Korean Patent Application No. 10-2021-0117622, ​​filed September 3, 2021; and Korean Patent Application No. 10-2021-0178549, filed December 14, 2021 with the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to a display device, and more specifically, to a display device capable of preventing degradation, for example, by improving the reliability of transistors. Background Technology

[0004] Recently, with the full arrival of the information age, display devices that visually display electrical information signals are developing rapidly. Various research efforts are underway to develop thinner, lighter, lower-power display devices with improved performance.

[0005] Among various display devices, light-emitting display devices refer to self-emissive display devices. Unlike liquid crystal displays (LCDs), light-emitting display devices do not require a separate light source, thus allowing them to be manufactured as lightweight and thin displays. Furthermore, light-emitting display devices are advantageous in terms of power consumption because they operate at low voltages. Moreover, due to their excellent performance in color reproduction, response speed, viewing angle, and contrast ratio (CR), light-emitting display devices are expected to be used in various fields. Summary of the Invention

[0006] The objective of this disclosure is to provide a display device capable of preventing hydrogen diffusion generated by the packaging unit.

[0007] Another objective of this disclosure is to provide a display device that can prevent degradation by improving the reliability of transistors.

[0008] Another objective of this disclosure is to provide a display device with improved light extraction efficiency.

[0009] Another objective of this disclosure is to provide a display device that can reduce material costs and simplify the manufacturing process of the protective covering layer (outer layer).

[0010] The purpose of this disclosure is not limited to the above-described purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0011] According to one aspect of this disclosure, a display device includes: a substrate including a display area and a non-display area; a first covering layer located above the substrate and including a base and a protrusion projecting from the base; a first hydrogen barrier layer located on the top surface of the protrusion in the display area; a first electrode covering the base and the first hydrogen barrier layer; a dam located on a portion of the first electrode; an organic layer located on the first electrode and the dam; and a second electrode located on the organic layer.

[0012] Further details of exemplary embodiments of this disclosure are included in the following detailed description and accompanying drawings.

[0013] According to this disclosure, the hydrogen barrier layer can minimize the diffusion of hydrogen into the transistor.

[0014] This disclosure can improve the quality of a display device by preventing transistor degradation.

[0015] This disclosure can improve the light extraction efficiency of display devices.

[0016] This disclosure can reduce process costs by reducing the number of coating layers.

[0017] The effects of this disclosure are not limited to those illustrated above, and this specification includes many more effects. Attached Figure Description

[0018] The above and other aspects, features, and other advantages of this disclosure will become clearer from the following detailed description given in conjunction with the accompanying drawings, wherein:

[0019] Figure 1 This is a top plan view of a display device according to an embodiment of the present disclosure;

[0020] Figure 2 yes Figure 1 Enlarged top view of region A in the diagram;

[0021] Figure 3 It is along Figure 1 A cross-sectional view of the display device obtained from line III-III′ in the diagram;

[0022] Figures 4A to 4D These are cross-sectional views showing a method for manufacturing a display device according to embodiments of the present disclosure; and

[0023] Figures 5 to 8 This is a view illustrating a display device according to various embodiments of the present disclosure. Detailed Implementation

[0024] The advantages and features of this disclosure, as well as the methods for achieving these advantages and features, will become clear from the exemplary embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. These exemplary embodiments are provided by way of example only to enable those skilled in the art to fully understand the disclosure and scope of this disclosure. Therefore, this disclosure will be limited only by the scope of the appended claims.

[0025] The shapes, dimensions, ratios, angles, quantities, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Furthermore, in the following description of this disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0026] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0027] When using terms such as “above,” “over,” “below,” and “adjacent” to describe the positional relationship between two parts, one or more parts may be positioned between the two parts, unless these terms are used with the terms “immediately adjacent” or “directly.”

[0028] When one element or layer is placed "on" another element or layer, yet another element or layer can be directly inserted on or between the other element or layer.

[0029] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component mentioned below can be the second component in the technical concept of this disclosure.

[0030] Throughout the specification, similar reference numerals generally denote similar elements.

[0031] The dimensions and thicknesses of each component shown in the accompanying drawings are illustrated for ease of description, and this disclosure is not limited to the dimensions and thicknesses of the components shown.

[0032] Features of the various embodiments of this disclosure may be partially or wholly attached or combined with each other, and may be technically interlocked and operated in various ways, and these embodiments may be performed independently of each other or in relation to each other.

[0033] This disclosure will be described in detail below with reference to the accompanying drawings.

[0034] Figure 1 This is a top plan view of a display device according to an embodiment of the present disclosure.

[0035] refer to Figure 1 The display device 100 according to an embodiment of the present disclosure includes a display area AA and a non-display area NA.

[0036] The display area AA can be disposed at the center of the substrate 110. The display area AA can be an area of ​​the display device 100 where an image is displayed. Various display elements and various driving elements for operating (running) the display elements can be disposed in the display area AA. For example, the display element can be configured as a light-emitting element 170, which includes a first electrode 171, an organic layer 172, and a second electrode 173, as will be described below. Furthermore, various driving elements can be disposed in the display area AA, such as… Figure 3 The first transistor 130, capacitor, wires, etc. shown are driving elements configured to operate the display element.

[0037] Multiple subpixels SP can be included in the display area AA. A subpixel SP is the smallest unit constituting the screen. Each of the multiple subpixels SP can include a light-emitting element 170 and a driving circuit. Each of the multiple subpixels SP can be defined as the area where multiple gate lines disposed in a first direction intersect with multiple data lines disposed in a second direction different from the first direction. In this case, the first direction can be based on... Figure 1 The horizontal direction, the second direction can be based on... Figure 1 The vertical direction. However, this disclosure is not limited thereto. The plurality of sub-pixels SP can emit light beams with different wavelengths. For example, the plurality of sub-pixels SP may include red sub-pixels, green sub-pixels, and blue sub-pixels. In addition, the plurality of sub-pixels SP may also include white sub-pixels.

[0038] The driving circuit of the sub-pixel SP is a circuit used to control the operation of the light-emitting element 170. For example, the driving circuit may include a switching transistor, a driving transistor, a capacitor, etc. The driving circuit may be electrically connected to signal lines such as gate lines and data lines, wherein the gate lines and the data lines are connected to gate drivers and data drivers disposed in the non-display area NA.

[0039] The non-display area NA can be disposed in the peripheral region of the substrate 110. The non-display area NA can be an area in which no image is displayed. The non-display area NA can be disposed around the display area AA, but this disclosure is not limited thereto. Various constituent elements for operating the plurality of sub-pixels SP disposed in the display area AA can be disposed in the non-display area NA. For example, a driving IC, driving circuit, signal line, flexible film, etc., configured to provide signals for operating the plurality of sub-pixels SP can be disposed in the non-display area NA. In this case, the driving IC may include a gate driver, a data driver, etc.

[0040] Figure 2 yes Figure 1 An enlarged top-view plan of region A in the diagram. Figure 3 It is along Figure 1 The cross-sectional view of the display device obtained from line III-III′ in the diagram. Figure 2 Multiple sub-pixels SP, a first hydrogen barrier layer 161, a first electrode 171, and a contact hole CH are shown only schematically.

[0041] refer to Figure 3 The display device 100 includes a substrate 110, a protective layer 121, a first transistor 130, an auxiliary electrode 141, cladding layers 150 and 114, a first hydrogen barrier layer 161, a light-emitting element 170, a dam 180, and a packaging unit 190. The display device 100 may be implemented as a top-emitting display device, but this disclosure is not limited thereto.

[0042] The substrate 110 is a substrate configured to support and protect several constituent elements of the display device 100. The substrate 110 may be made of glass or a flexible plastic material. When the substrate 110 is made of a plastic material, it may be made of polyimide (PI), for example. However, this disclosure is not limited thereto.

[0043] A protective layer 121 is disposed on the substrate 110. The protective layer 121 may be configured to overlap (stack) the first transistor 130. The protective layer 121 may be made of a metallic material and electrically connected to the source electrode 133 or drain electrode 134 of the first transistor 130. However, this disclosure is not limited thereto. For example, the protective layer 121 may be made of molybdenum (Mo) and electrically connected to the drain electrode 134. However, this disclosure is not limited thereto. The protective layer 121 may be selectively formed only in the necessary regions. For example, the protective layer 121 may be configured to overlap with the first transistor 130, which serves as a driving transistor. However, this disclosure is not limited thereto.

[0044] The protective layer 121 can suppress the emergence of potential at the surface of the substrate 110 and block the inflow of light from the outside. Specifically, when the substrate 110 is made of plastic material, a separate (detached) support substrate is attached to the lower part of the substrate 110 to support the substrate 110 during the manufacturing process of the substrate 110. In this case, a sacrificial layer is provided between the substrate 110 and the support substrate. When the manufacturing process is completed, the substrate 110 and the support substrate can be separated by a laser release (desorption) process. The active layer 131 of the first transistor 130 disposed above the substrate 110 may be damaged by the laser beam emitted during the laser release process.

[0045] Furthermore, a sensor using infrared light or the like can be placed below the display device 100. Therefore, the active layer 131 may be degraded by the light generated by the sensor.

[0046] Furthermore, the threshold voltage (Vth) of the first transistor 130 may shift due to the current drop generated by the sacrificial layer and the substrate 110. Specifically, a negative charge trap may appear at the sacrificial layer due to the laser beam and light introduced from the outside. Additionally, positive (+) charges in the plastic material, such as polyimide (PI), which is the material of the substrate 110, may move towards the sacrificial layer. Therefore, the potential at the surface of the substrate 110 may increase. As a result, the threshold voltage of the first transistor 130 shifts in the positive direction, and the current flowing through the first transistor 130 may decrease. This shift in threshold voltage reduces the reliability of the display device 100.

[0047] Therefore, when the display device 100 operates after the laser emission process, the substrate 110 may generate heat. As a result, charged particles generated at the substrate 110 move upward. These charged particles affect the active layer 131 of the first transistor 130, which may reduce the reliability of the display device 100.

[0048] Therefore, the protective layer 121 can be disposed below the first transistor 130. In this case, the protective layer 121 can overlap with the active layer 131. In particular, the protective layer 121 can be disposed to overlap with the channel region of the active layer 131. The protective layer 121 can prevent the channel region from being degraded by the emitted light. Furthermore, the protective layer 121 can protect the first transistor 130 from the influence of charged particles generated at the substrate 110 and minimize the influence of charge flowing through the channel of the first transistor 130. Therefore, threshold voltage shift and current drop of the first transistor 130 can be prevented, and the reliability of the display device 100 can be improved.

[0049] Since the protective layer 121 is made of a metallic material, both the protective layer 121 and the active layer 131 can, in some cases, be elements used to form a capacitor. In this case, when the protective layer 121 is electrically floating, the parasitic capacitance can be altered, and the offset of the threshold voltage of the first transistor 130 can be varied. This can lead to visual defects such as changes in brightness. Therefore, since the protective layer 121 is electrically connected to the source electrode 133 or the drain electrode 134, the parasitic capacitance can be kept constant. That is, the same voltage can be supplied to the protective layer 121 as to the source electrode 133 or the drain electrode 134.

[0050] Meanwhile, in the accompanying drawings, the protective layer 121 is shown disposed below the first transistor 130, which serves as the driving transistor. However, this disclosure is not limited thereto. The protective layer 121 may also be disposed below a transistor different from the driving transistor.

[0051] A buffer layer 111 is disposed on the substrate 110 and the protective layer 121. The buffer layer 111 can reduce the amount of moisture (water) or impurities passing through the substrate 110. In addition, the buffer layer 111 can protect the first transistor 130 from impurities such as alkaline ions flowing out of the substrate 110. Therefore, the buffer layer 111 can improve the adhesion between the substrate 110 and the layer formed above the upper portion of the buffer layer 111. The buffer layer 111 can be configured as a single layer made of silicon nitride (SiNx) or silicon oxide (SiOx) or a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto. The buffer layer 111 is not an essential constituent element. Depending on the type and material of the substrate 110, the structure and type of the first transistor 130, etc., the buffer layer 111 can be removed. At the same time, in some cases, the buffer layer can also be disposed between the substrate 110 and the protective layer 121.

[0052] The first transistor 130 is disposed above the buffer layer 111. The first transistor 130 can be used to operate the driving element of the light-emitting element 170 in the display area AA. The first transistor 130 includes an active layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. Figure 3 The first transistor 130 shown is a driving transistor. The first transistor 130 is a thin-film transistor with a top-gate structure, wherein the gate electrode 132 is disposed above the active layer 131. However, this disclosure is not limited thereto. The first transistor 130 may be implemented as a transistor with a bottom-gate structure.

[0053] Figure 3 Only the driving transistor 130 among the various transistors included in the display device 100 is shown. However, other transistors, such as switching transistors, may be included in the display device 100.

[0054] Furthermore, according to the display device 100 based on embodiments of the present disclosure, at least two types of thin-film transistors can be formed on the same substrate 110. In this case, LTPS thin-film transistors and oxide semiconductor thin-film transistors are used as the at least two types of thin-film transistors. The LTPS thin-film transistor can be a thin-film transistor using low-temperature polycrystalline silicon (LTPS) as the active layer. The oxide semiconductor thin-film transistor can be a thin-film transistor using an oxide semiconductor material as the active layer. The display device 100 according to the present disclosure can provide optimal functionality because LTPS thin-film transistors and oxide semiconductor thin-film transistors with different characteristics are disposed on the same substrate. Figure 3 Only the first transistor 130, which serves as the driving transistor, is shown. This disclosure will be described with reference to a configuration in which the first transistor 130 is an oxide semiconductor thin-film transistor (OST). In this case, the display device 100 may include both the OST thin-film transistor and the OST thin-film transistor as described above. The display device 100 may also include only OST thin-film transistors.

[0055] An active layer 131 is disposed on the buffer layer 111. The active layer 131 is the region in which a channel is formed when the first transistor 130 is operated. Since the first transistor 130 is an oxide semiconductor thin-film transistor, the active layer 131 can be made of oxide semiconductor. However, in the case that the first transistor 130 is an LTPS thin-film transistor, the active layer can be made of low-temperature polysilicon.

[0056] A gate insulating layer 112 is disposed on the active layer 131. The gate insulating layer 112 is a layer used to electrically insulate the active layer 131 from the gate electrode 132. The gate insulating layer 112 may be made of an insulating material. For example, the gate insulating layer 112 may be configured as a monolayer made of silicon nitride (SiNx) or silicon oxide (SiOx), wherein silicon nitride (SiNx) or silicon oxide (SiOx) is an inorganic material. Alternatively, the gate insulating layer 112 may be configured as a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto.

[0057] The gate insulating layer 112 has contact holes through which the source electrode 133 and the drain electrode 134 contact the source and drain regions of the active layer 131, respectively. Figure 3 As shown, the gate insulating layer 112 may be formed on the entire surface of the substrate 110, or may be patterned to have the same width as the gate electrode 132. However, this disclosure is not limited thereto.

[0058] A gate electrode 132 is disposed on a gate insulating layer 112. The gate electrode 132 is disposed on the gate insulating layer 112 and overlaps with the channel region of the active layer 131. The gate electrode 132 may be made of any of a variety of metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), and alloys of two or more of these metallic materials. Alternatively, the gate electrode 132 may be configured as a multilayer made of a variety of metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), and alloys of two or more of these metallic materials. However, this disclosure is not limited thereto.

[0059] An interlayer insulating layer 113 is disposed on the gate electrode 132. The interlayer insulating layer 113 may be configured as a single layer made of silicon nitride (SiNx) or silicon oxide (SiOx), wherein silicon nitride (SiNx) or silicon oxide (SiOx) is an inorganic material. Alternatively, the interlayer insulating layer 113 may be configured as a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto. The interlayer insulating layer 113 has contact holes through which the source electrode 133 and the drain electrode 134 contact the source and drain regions of the active layer 131, respectively.

[0060] Source electrode 133 and drain electrode 134 are disposed on interlayer insulating layer 113. Source electrode 133 and drain electrode 134 are disposed on the same layer and spaced apart from each other. Source electrode 133 and drain electrode 134 are electrically connected to active layer 131 through contact holes in gate insulating layer 112 and contact holes in interlayer insulating layer 113. Source electrode 133 and drain electrode 134 can each be made of any of a variety of metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), and alloys of two or more of these metallic materials. Alternatively, source electrode 133 and drain electrode 134 can each be configured as a multilayer made of a variety of metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), and alloys of two or more of these metallic materials. However, this disclosure is not limited thereto.

[0061] Covering layers 114 and 150 are disposed on the interlayer insulating layer 113 and the first transistor 130. Covering layers 114 and 150 may include a first covering layer 150 and a second covering layer 114. Covering layers 114 and 150 may each be made of any one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene, and photoresist. However, this disclosure is not limited thereto.

[0062] A second cladding layer 114 is disposed above the first transistor 130. The second cladding layer 114 is an insulating layer that protects the first transistor 130 and planarizes the upper part of the first transistor 130. The second cladding layer 114 has contact holes through which the drain electrode 134 of the first transistor 130 is exposed. Figure 3 The contact hole is shown to be formed in the second overlay 114 to expose the drain electrode 134. However, this disclosure is not limited thereto. For example, the second overlay 114 may have a contact hole through which the source electrode 133 is exposed.

[0063] Simultaneously, a passivation layer may be disposed below the second cladding layer 114 and cover the interlayer insulating layer 113 and the first transistor 130. The passivation layer may be configured as a single layer made of silicon nitride (SiNx) or silicon oxide (SiOx) or a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto.

[0064] An auxiliary electrode 141 is disposed on the second cladding layer 114. The auxiliary electrode 141 is used to electrically connect the first transistor 130 and the light-emitting element 170. The auxiliary electrode 141 is electrically connected to the drain electrode 134 of the first transistor 130 through a contact hole formed in the second cladding layer 114. The auxiliary electrode 141 may be configured as a single layer or multiple layers made of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and their alloys.

[0065] A first covering layer 150 is disposed on the second covering layer 114. The first covering layer 150 is an insulating layer used to planarize the upper portion of the second covering layer 114 and the upper portion of the auxiliary electrode 141. The first covering layer 150 has a contact hole CH through which the auxiliary electrode 141 is exposed. The first covering layer 150 includes a base 151 and a protrusion 152. The base 151 and the protrusion 152 may be integral with each other. For example, the base 151 and the protrusion 152 may be made of the same material and formed by the same process (e.g., the same masking process). However, this disclosure is not limited thereto.

[0066] A base 151 is disposed on the second cladding layer 114. The top surface of the base 151 is parallel to the surface of the substrate 110. Therefore, the base 151 can eliminate any height difference that may occur due to the constituent elements disposed at the lower part of the base 151. A portion of the top surface of the base 151 may be exposed by the protrusion 152. A light-emitting element 170 may be disposed in the exposed area of ​​the base 151.

[0067] A protrusion 152 is provided on the base 151. The protrusion 152 is integral with the base 151 and has a shape that protrudes from the base 151. That is, the protrusion 152 is configured to protrude from a region of the base 151 other than the area where the light-emitting element 170 will be disposed. The protrusion 152 may have a shape in which the top surface is smaller than its bottom surface. However, this disclosure is not limited thereto.

[0068] The protrusion 152 includes a top surface and a side surface. The top surface of the protrusion 152 is the surface positioned at the uppermost side of the protrusion 152. The top surface of the protrusion 152 may be a surface that is substantially parallel to the base 151 or the substrate 110. The side surface of the protrusion 152 may be a surface that connects the top surface of the protrusion 152 and the base 151. The side surface of the protrusion 152 may have a shape that slopes from the top surface toward the base 151.

[0069] A first hydrogen barrier layer 161 is disposed on the protrusion 152. Specifically, the first hydrogen barrier layer 161 may be disposed on the top surface of the protrusion 152. That is, the first hydrogen barrier layer 161 is not disposed on the top surface of the base 151 on which the light-emitting element 170 is formed. The first hydrogen barrier layer 161 may be disposed around the top surface of the base 151 exposed by the protrusion 152. The first hydrogen barrier layer 161 may also be disposed in the contact hole CH formed in the first covering layer 150. Therefore, the first hydrogen barrier layer 161 can electrically connect the auxiliary electrode 141 and the first electrode 171.

[0070] The first hydrogen barrier layer 161 can be made of a metallic material capable of blocking hydrogen diffusion. For example, the first hydrogen barrier layer 161 can be made of titanium (Ti). Specifically, titanium has the property of capturing hydrogen when it encounters hydrogen. Furthermore, the first hydrogen barrier layer 161 can be configured to completely cover the first transistor 130. Therefore, the first hydrogen barrier layer 161 can prevent the diffusion of hydrogen generated by the packaging unit 190 and minimize the degradation of the first transistor 130 caused by hydrogen.

[0071] Specifically, refer to Figure 2The first hydrogen barrier layer 161 and the first electrode 171 can be patterned to correspond to each of the plurality of sub-pixels SP. In this case, the first hydrogen barrier layer 161 can be disposed below the first electrode 171 (in other words, below the first electrode 171) and electrically connected to the first electrode 171. The first hydrogen barrier layer 161 can be configured in a closed-loop shape to contact the edge of the first electrode 171. The first hydrogen barrier layer 161 can prevent hydrogen generated by the packaging unit 190 from diffusing into the first transistor 130. Meanwhile, in Figure 2 In this process, the central region of the first electrode 171, which does not overlap with the first hydrogen barrier layer 161, can be a light-emitting region in which a light-emitting element 170 is formed and which substantially (basically) emits light. That is, the first hydrogen barrier layer 161 is configured to surround the light-emitting region and may not overlap with it.

[0072] The light-emitting element 170 is disposed above the first covering layer 150. The light-emitting element 170 may include: a first electrode 171 electrically connected to the drain electrode 134 of the first transistor 130; an organic layer 172 disposed on the first electrode 171; and a second electrode 173 formed on the organic layer 172.

[0073] The first electrode 171 is configured to correspond to each of the plurality of sub-pixels SP. The first electrode 171 is configured to cover the base 141, the protrusion 152, and the first hydrogen barrier layer 161. Specifically, the first electrode 171 may be disposed on the top surface of the first base 151 on which the protrusion 152 is not disposed. The first electrode 171 may be disposed on the side surface of the protrusion 152 and the top surface of the first hydrogen barrier layer 161. That is, the first electrode 171 is disposed along the shape of the base 151 and the shape of the protrusion 152. Furthermore, the first electrode 171 may also be formed in a portion of the top surface of the protrusion 152.

[0074] The first electrode 171 can be the anode of the light-emitting element 170. The first electrode 171 can be electrically connected to the auxiliary electrode 141 and the drain electrode 134 of the first transistor 130 through the first hydrogen barrier layer 161. However, depending on the type of the first transistor 130, the method of designing the driving circuit, etc., the first electrode 171 can be electrically connected to the source electrode 133 of the first transistor 130.

[0075] Figure 3 The first electrode 171 is shown to be configured as a single layer. However, the first electrode 171 can be configured as a multilayer. For example, the first electrode 171 may include: a reflective layer configured to reflect light emitted from the organic layer 172 toward the second electrode 173; and a transparent conductive layer configured to provide positive holes to the organic layer 172.

[0076] A reflective layer can be disposed on the first covering layer 150 and the first hydrogen blocking layer 161, and reflects upward light emitted from the light-emitting element 170. Light emitted from the organic layer 172 of the light-emitting element 170 can propagate not only upward but also laterally. Laterally emitted light can propagate into the display device 100 and be captured in the display device 100 by total internal reflection. Furthermore, light may disappear after propagating into the display device 100. Therefore, a reflective layer is disposed at the lower part of the organic layer 172 and is configured to cover the lateral portion of the protrusion 152. The reflective layer can change the propagation direction of light propagating towards the lateral portion of the organic layer 172 to a forward direction.

[0077] The reflective layer can be made of a metallic material. For example, the reflective layer can be made of a metallic material such as aluminum (Al), silver (Ag), copper (Cu), or a magnesium-silver alloy (Mg:Ag). However, this disclosure is not limited thereto.

[0078] A transparent conductive layer is disposed on the reflective layer. The transparent conductive layer can be made of a conductive material with a high work function to provide positive holes to the organic layer 172. For example, the transparent conductive layer can be made of a transparent conductive oxide based on indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO). However, this disclosure is not limited thereto.

[0079] A dam 180 is disposed on the first covering layer 150 and the first electrode 171. The dam 180 may cover a portion of the first electrode 171 and define a light-emitting area and a non-light-emitting area. The light-emitting area may refer to the region in which light is emitted substantially by the organic layer 172 in each of the plurality of sub-pixels SP. The dam 180 is not disposed in the light-emitting area. The organic layer 172 may be directly positioned on the first electrode 171 and emit light in the light-emitting area. The non-light-emitting area may refer to the region in which no light is emitted. However, the non-light-emitting area may include a light-reflecting area in which no light is emitted but light is reflected, such that light is extracted forward. The light-reflecting area may be the region corresponding to an inclined surface that serves as the side surface of the protrusion 152. In this light-reflecting area, light emitted laterally from the light-emitting element 170 may be extracted forward by the first electrode 171 disposed along the inclined surface of the protrusion 152.

[0080] The dam 180 can be made of organic materials. For example, the dam 180 can be made of polyimide resin, acrylic resin, or benzocyclobutene resin. However, this disclosure is not limited thereto.

[0081] An organic layer 172 is disposed on the first electrode 171 and the embankment 180. For example, the organic layer 172 is disposed on the first electrode 171 in the light-emitting region and on the embankment 180 in the non-light-emitting region. The organic layer 172 may be disposed along the shape of the first electrode 171 and the shape of the embankment 180. The organic layer 172 includes a light-emitting layer and a common layer.

[0082] A light-emitting layer is an organic layer configured to emit light of a specific color. Different light-emitting layers can be disposed separately in the plurality of sub-pixels SP. A single light-emitting layer can be disposed throughout the plurality of sub-pixels SP. For example, when different light-emitting layers are disposed separately in the plurality of sub-pixels SP, a red light-emitting layer can be disposed in the red sub-pixel, a green light-emitting layer can be disposed in the green sub-pixel, and a blue light-emitting layer can be disposed in the blue sub-pixel. When a single light-emitting layer is disposed throughout the plurality of sub-pixels SP, the light emitted from the light-emitting layer can be converted into light of various colors by separate optical conversion layers, color filters, etc.

[0083] The common layer is an organic layer configured to improve the luminous efficiency of the light-emitting layer. Multiple identical common layers can be formed above the multiple sub-pixels SP. That is, the common layers of the multiple sub-pixels SP can be made of the same material and formed simultaneously using the same process. The common layer may include a positive hole injection layer, a positive hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc. However, this disclosure is not limited thereto.

[0084] A second electrode 173 is disposed on the organic layer 172. The second electrode 173 may be disposed along the shape of the organic layer 172. Since the second electrode 173 provides electrons to the organic layer 172, the second electrode 173 may be made of a conductive material with a low work function. The second electrode 173 may be the cathode of the light-emitting element 170. The second electrode 173 may be made of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO) or a metal alloy such as MgAg or ytterbium (Yb) alloys. The second electrode 173 may also include a metal doped layer. However, this disclosure is not limited thereto.

[0085] An encapsulation unit 190 is disposed above the light-emitting element 170. For example, the encapsulation unit 190 is disposed on the second electrode 173 and covers the light-emitting element 170. The encapsulation unit 190 protects the light-emitting element 170 from moisture and oxygen that may penetrate into the display device 100 from the outside. The encapsulation unit 190 may have a structure in which inorganic and organic layers are stacked alternately. The encapsulation unit 190 includes a first encapsulation layer 191, a foreign matter covering layer 192, and a second encapsulation layer 193.

[0086] The first encapsulation layer 191 can be disposed on the second electrode 173 and prevent the penetration of moisture or oxygen. The first encapsulation layer 191 can be made of an inorganic material such as silicon nitride (SiNx), silicon oxynitride (SiNxOy), silicon oxide (SiOx), or aluminum oxide (AlyOz). However, this disclosure is not limited thereto.

[0087] A foreign matter cover layer 192 is disposed on the first encapsulation layer 191 and planarizes the surface of the first encapsulation layer 191. Furthermore, the foreign matter cover layer 192 can cover foreign matter or particles that may be generated during the manufacturing process of the encapsulation unit 190. The foreign matter cover layer 192 can be made of organic materials, such as silicon oxide carbon (SiOxCz) or acrylic or epoxy resins. However, this disclosure is not limited thereto.

[0088] Similar to the first encapsulation layer 191, the second encapsulation layer 193 can be disposed on the foreign matter covering layer 192 to prevent the penetration of moisture or oxygen. The second encapsulation layer 193 can be made of an inorganic material such as silicon nitride (SiNx), silicon oxynitride (SiNxOy), silicon oxide (SiOx), or aluminum oxide (AlyOz). However, this disclosure is not limited thereto. The second encapsulation layer 193 can be made of the same material as the first encapsulation layer 191. Alternatively, the second encapsulation layer 193 can be made of a different material than the first encapsulation layer 191.

[0089] When an inorganic layer is included in the packaging unit, a large amount of hydrogen (H2) is generated during the manufacturing process of the inorganic layer. Therefore, the inorganic layer of the packaging unit contains a significant amount of hydrogen (gas). Over time, the hydrogen in the inorganic layer of the packaging unit can diffuse into other areas of the display device. When the hydrogen in the inorganic layer of the packaging unit permeates into the transistor, which includes the active layer made of oxide semiconductor, the characteristics (or properties) of the transistor are altered. Specifically, the threshold voltage (Vth) of the transistor shifts in the negative direction, which can lead to transistor degradation. In particular, oxide semiconductors are more susceptible to the effects of hydrogen. Therefore, there is a problem that display devices including oxide semiconductor thin-film transistors are more prone to hydrogen-induced transistor degradation and defects, and the quality and reliability of the display device deteriorate.

[0090] Therefore, the display device 100 according to this embodiment of the present disclosure may include a first hydrogen barrier layer 161, thereby minimizing the diffusion of hydrogen into the first transistor 130. Specifically, the first hydrogen barrier layer 161 may be made of titanium, which has hydrogen-capturing properties. Therefore, the diffusion of hydrogen from the first encapsulation layer 191 and the second encapsulation layer 193 of the encapsulation unit 190 can be blocked by the titanium of the first hydrogen barrier layer 161. Thus, hydrogen penetration into the first transistor 130 can be minimized, degradation of the first transistor 130 can be suppressed, and the reliability of the display device 100 can be improved.

[0091] Furthermore, not only the first hydrogen barrier layer 161 but also the auxiliary electrode 141 may include titanium. That is, the auxiliary electrode 141 can be configured to completely cover the first transistor 130 and serve as a hydrogen barrier layer. In this case, the first hydrogen barrier layer 161 and the auxiliary electrode 141 can doubly prevent hydrogen from diffusing toward the first transistor 130. Therefore, the quality of the display device 100 can be further improved.

[0092] The first hydrogen barrier layer 161 can directly contact and be electrically connected to the bottom surface of the first electrode 171. Additionally, the first hydrogen barrier layer 161 can electrically connect the light-emitting element 170 and the first transistor 130 through the contact holes CH of the first covering layer 150. Therefore, even if a portion of the first electrode 171 is disconnected during patterning, the electrical connection between the light-emitting element 170 and the first transistor 130 can be maintained through the first hydrogen barrier layer 161.

[0093] Specifically, such as Figure 2 As shown, the first electrode 171 has a relatively large area in the region corresponding to the light-emitting area of ​​the sub-pixel SP, and a relatively small area in the region corresponding to the contact hole CH for connection with the first transistor 130. Therefore, during the patterning of the first electrode 171, a break may occur in the region of the first electrode 171 with the relatively small area, or at the boundary between the region with the relatively small area and the region with the relatively large area. In this case, the first electrode 171 and the first hydrogen barrier layer 161 can be etched by different processes. Therefore, even if a portion of the first electrode 171 is broken during the etching process, the first hydrogen barrier layer 161 located at the lower part of the first electrode 171 is not etched by the etchant used when etching the first electrode 171. That is, even if the first electrode 171 is broken, the first hydrogen barrier layer 161 can maintain the electrical connection. Therefore, dark (spot) defects in the display device 100 that may occur when the first electrode 171 is broken can be prevented.

[0094] The first hydrogen barrier layer 161 can be patterned for each of the plurality of sub-pixels SP. Therefore, the respective first electrodes 171 of the plurality of sub-pixels SP can be kept electrically insulated from each other. Furthermore, the respective first hydrogen barrier layers 161 disposed in the plurality of sub-pixels SP are spaced apart from each other, and the first cladding layer 150 can have areas exposed that are not covered by the first hydrogen barrier layers 161. Therefore, fumes generated during the process of forming the cladding layers 114 and 150 can be easily discharged.

[0095] The first hydrogen barrier layer 161 can be used as a hard mask for forming the base 151 and the protrusion 152. Therefore, the base 151 and the protrusion 152 are integrated through a single organic material layer, which reduces material costs and simplifies the manufacturing process of the display device. (See reference...) Figures 4A to 4D Describe this configuration in detail.

[0096] Figures 4A to 4D This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present disclosure.

[0097] refer to Figure 4A A protective layer 121, a buffer layer 111, a first transistor 130, a gate insulating layer 112, an interlayer insulating layer 113, an auxiliary electrode 141, cladding layers 114 and 150, and a metal layer 461 are formed above the substrate 110. In this case, the top surface of the first cladding layer 150 may be parallel to the top surface of the substrate 110. The metal layer 461 may be deposited over the entire first cladding layer 150 and electrically connected to the auxiliary electrode 141 through the contact hole CH of the first cladding layer 150. The metal layer 461 may be made of titanium (Ti).

[0098] refer to Figure 4B A photoresist (photoresist PR) is applied (coated) onto the metal layer 461, and a portion of the metal layer 461 is removed by using the photoresist PR as a mask. In this case, the area from which the metal layer 461 is removed can be the area where the top surface of the base 151 is later exposed.

[0099] refer to Figure 4CThe photoresist PR is removed using an ashing process with oxygen (O2). In this case, a portion of the first cladding layer 150 can also be removed simultaneously with the removal of the photoresist PR. Specifically, during the ashing process, a portion of the first cladding layer 150, along with the photoresist PR, can be etched using a metal layer 461 as a hard mask. In other words, a portion of the first cladding layer 150 exposed by the metal layer 461 can be removed by the ashing process. The area from which the first cladding layer 150 is removed can have a shape that is recessed from the top surface of the first cladding layer 150. Furthermore, the lateral portion adjacent to the area from which the first cladding layer 150 is removed can have a protruding shape. That is, the ashing process can be configured to include a base 151 and a protrusion 152 protruding from the base 151.

[0100] refer to Figure 4D The light-emitting element 170, the dam 180, and the encapsulation unit 190 are formed over the first covering layer 150. Specifically, the first electrode 171 is formed on the exposed top surface of the base 151, the exposed side surface of the protrusion 152, and the exposed top surface of the metal layer 461. In this case, the first electrode 171 can be formed over the entire surface of the substrate 110. Subsequently, the metal layer 461 and the first electrode 171 can be patterned to correspond to each of the plurality of sub-pixels SP. Thus, the first hydrogen barrier layer 161 and the first electrode 171 can be separated for each of the plurality of sub-pixels SP. Meanwhile, the configuration of patterning the metal layer 461 after forming the first electrode 171 has been described. However, this disclosure is not limited thereto. That is, the metal layer 461 can be patterned before forming the first electrode 171. The dam 180, the organic layer 172, the second electrode 173, and the encapsulation unit 190 are formed after the formation of the first hydrogen barrier layer 161 and the first electrode 171.

[0101] The first hydrogen barrier layer 161 can be disposed on the top surface of the protrusion 152 and surrounding the recessed region of the first covering layer 150. That is, the recessed region of the first covering layer 150 is formed by removing a portion of the first covering layer 150 by using the first hydrogen barrier layer 161 as a mask. Therefore, the first hydrogen barrier layer 161 is disposed only on the top surface of the protrusion 152. The first hydrogen barrier layer 161 is not disposed on the top surface of the base 151 and the side surface of the protrusion 152. Furthermore, the first hydrogen barrier layer 161 can be disposed along the edge of the first electrode 171 and only at the lower part of the first electrode 171. Therefore, the display device 100 according to this embodiment of the present disclosure can further include only the first hydrogen barrier layer 161 without changing the overall structure of the first hydrogen barrier layer 161, thereby preventing the degradation of the first transistor 130.

[0102] The first hydrogen barrier layer 161 can be used to block hydrogen and serves as a mask for etching the first cladding layer 150. That is, a recessed region can be formed by removing a portion of the first cladding layer 150 through the first hydrogen barrier layer 161. A light-emitting element 170 is disposed in the recessed region of the first cladding layer 150. Specifically, the first electrode 171 can be disposed along the shape of the recessed region. Therefore, the first electrode 171 can include an inclined surface disposed along the side surface of the recessed region, i.e., the side surface of the protrusion 152. Light emitted from the light-emitting element 170 and propagating laterally can be extracted forward by being reflected by the inclined surface of the first electrode 171. Therefore, the light extraction efficiency of the display device 100 can be improved.

[0103] According to the display device 100 based on this embodiment of the present disclosure, the base 151 and protrusion 152 of the first covering layer 150 can be formed from a single organic material layer. That is, the material layer used to form the base 151 and the material layer used to form the protrusion 152 are formed from a single organic material layer, and do not need to be formed separately. Specifically, by using the first hydrogen barrier layer 161 as a mask to remove a portion of the first covering layer 150, the protrusion 152 can have a protruding shape on the base 151 of the first covering layer 150. Therefore, it is not necessary to form separate organic layers for forming the base 151 and the protrusion 152. Thus, material costs can be reduced and the manufacturing process of the display device can be simplified.

[0104] Figure 5 This is a cross-sectional view of a display device according to another embodiment of the present disclosure. Besides the auxiliary electrode 541, Figure 5 The display device 500 shown and Figures 1 to 4D The display device 100 shown is essentially the same. Therefore, repetitive descriptions of identical components will be omitted.

[0105] refer to Figure 5 An auxiliary electrode 541 is disposed between the first cladding layer 150 and the second cladding layer 114 and is configured to completely overlap (completely cover) the first transistor 130. Furthermore, the auxiliary electrode 541 may extend to a region in which it overlaps with at least a portion of the light-emitting element 170. The auxiliary electrode 541 may be configured as a single layer or multiple layers made of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and their alloys. In particular, the auxiliary electrode 541 may be made of titanium, which has hydrogen-trapping properties. Therefore, the auxiliary electrode 541 can serve as a hydrogen barrier layer while also functioning as an auxiliary electrode for connecting the first transistor 130 and the light-emitting element 170.

[0106] According to the display device 500 based on this embodiment of the present disclosure, the auxiliary electrode 541 can be made of titanium and used as a hydrogen barrier layer. That is, the display device 500 includes not only the first hydrogen barrier layer 161, but also the auxiliary electrode 541 as a second hydrogen barrier layer. Therefore, a dual structure of hydrogen barrier layers can be formed between the packaging unit 190 and the first transistor 130, thereby further improving the hydrogen barrier effect.

[0107] Specifically, the auxiliary electrode 541 can completely overlap with the first transistor 130. Therefore, the auxiliary electrode 541 can block the movement of hydrogen from the package unit 190 toward the first transistor 130. Furthermore, the auxiliary electrode 541 can extend from the region where it overlaps with the first transistor 130 to the region where it overlaps with at least a portion of the light-emitting element 170. Therefore, even if hydrogen diffuses horizontally along the first coating layer 150, the auxiliary electrode 541 can minimize hydrogen diffusion from the first coating layer 150 to the second coating layer 114. Thus, degradation of the first transistor 130 can be prevented more effectively.

[0108] According to the display device 500 based on this embodiment of the present disclosure, the total resistance can be reduced by an auxiliary electrode 541. Specifically, the auxiliary electrode 541 is electrically connected to the first transistor 130 and the light-emitting element 170. In this case, since the auxiliary electrode 541 overlaps with at least a portion of both the first transistor 130 and the light-emitting element 170, the area of ​​the auxiliary electrode 541 can be increased. Therefore, the resistance of the display device 500 can be reduced, thereby improving power consumption.

[0109] Figure 6 This is a cross-sectional view of a display device according to yet another embodiment of the present disclosure. Besides auxiliary electrodes 641 and 642, Figure 6 The display device 600 shown and Figure 5 The display device 500 shown is essentially the same. Therefore, repetitive descriptions of identical components will be omitted.

[0110] refer to Figure 6 Auxiliary electrodes 641 and 642 are disposed between the first coating layer 150 and the second coating layer 114. Auxiliary electrodes 641 and 642 may be made of titanium and serve as a second hydrogen barrier layer. In this case, auxiliary electrodes 641 and 642 may be configured as multiple sub-hydrogen barrier layers. Specifically, auxiliary electrodes 641 and 642 may include a first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 and a second sub-hydrogen barrier layer corresponding to the second auxiliary electrode 642.

[0111] The first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 is electrically connected to the first transistor 130 and the light-emitting element 170. That is, the first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 can be essentially used as an auxiliary electrode. The first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 can be configured to completely overlap with the first transistor 130, thereby preventing hydrogen from diffusing into the first transistor 130.

[0112] The second sub-hydrogen barrier layer corresponding to the second auxiliary electrode 642 is spaced apart from the first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641. Furthermore, a plurality of second sub-hydrogen barrier layers corresponding to a plurality of second auxiliary electrodes 642 may be provided, and the plurality of second sub-hydrogen barrier layers corresponding to the plurality of second auxiliary electrodes 642 may be spaced apart from each other. Figure 6 Two second sub-hydrogen barrier layers corresponding to the two second auxiliary electrodes 642 are shown. However, this disclosure is not limited thereto.

[0113] The first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 and the plurality of second sub-hydrogen barrier layers corresponding to the plurality of second auxiliary electrodes 642 are all spaced apart from each other, while having a separation space. The separation space can define an area disposed between the first coating layer 150 and the second coating layer 114 and exposed without being covered by the first and second sub-hydrogen barrier layers. In particular, the porosity of the exposed area can be at least 30% or greater. Therefore, the flue gas generated during the process of forming the coating layers 114 and 150 can be easily discharged. In addition, the degradation of the organic layer 172 caused by the flue gas and the separation between the plurality of layers of the display device 600 can be minimized, thereby improving the reliability of the display device 600.

[0114] According to the display device 600 based on this embodiment of the present disclosure, the auxiliary electrode 641 can be made of titanium and used as a hydrogen barrier layer. Therefore, a dual structure of hydrogen barrier layers can be formed between the packaging unit 190 and the first transistor 130, thereby further improving the hydrogen barrier effect. Specifically, the auxiliary electrode includes a first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 and a second sub-hydrogen barrier layer corresponding to the second auxiliary electrode 642, spaced apart from each other. Therefore, hydrogen barrier function can be ensured, and flue gas can be easily discharged, thereby further improving the quality of the display device 600.

[0115] Furthermore, the first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 and the second sub-hydrogen barrier layer corresponding to the second auxiliary electrode 642 are spaced apart from each other and electrically insulated. Therefore, the first sub-hydrogen barrier layer corresponding to the first auxiliary electrode 641 and the second sub-hydrogen barrier layer corresponding to the second auxiliary electrode 642 can be used as different auxiliary electrodes or wires, thereby reducing the limitations on wiring design.

[0116] Figure 7 This is a top plan view of a display device according to another embodiment of the present disclosure. Figure 8 It is along Figure 7 A cross-sectional view of the display device obtained from line VIII-VIII′. Figure 7 It is a schematic representation of the corresponding Figure 1 A top plan view of a display device 700, which is a portion of the non-display area NA. Figure 7 The third hydrogen barrier layer 761 disposed in the non-display area NA is shown only schematically. Apart from the non-display area NA, Figure 7 and Figure 8 The display device 700 shown is Figures 1 to 4D The display device 100 shown is essentially the same. Therefore, repetitive descriptions of identical components will be omitted.

[0117] refer to Figure 7 and Figure 8 The display device 700 includes a protective layer 721, a plurality of transistors 130 and 730, auxiliary electrodes 141 and 741, a first hydrogen barrier layer 161 and a third hydrogen barrier layer 761.

[0118] The plurality of transistors 130 and 730 includes a first transistor 130 and a second transistor 730. The first transistor 130 may be a driving transistor disposed in the display area AA and electrically connected to a light-emitting element 170 disposed in each of the plurality of sub-pixels SP. The second transistor 730 may be a transistor included in a driving IC disposed in the non-display area NA. For example, the second transistor 730 may be a component of a gate driver. The gate driver may be implemented as a gate in panel (GIP). However, this disclosure is not limited thereto. Furthermore, Figure 7 One of a plurality of stages included in a gate driver is shown. The plurality of stages can be electrically connected to the plurality of sub-pixels SP via multiple gate lines.

[0119] The second transistor 730 includes an active layer 731, a gate electrode 732, a source electrode 733, and a drain electrode 734. In this case, the active layer 731, gate electrode 732, source electrode 733, and drain electrode 734 of the second transistor 730 can be made of the same material and formed by the same process as the active layer 131, gate electrode 132, source electrode 133, and drain electrode 134 of the first transistor 130. That is, the active layer 731 of the second transistor 730 can be made of oxide semiconductor. Figure 8 Only a second transistor 730 made of oxide semiconductor is shown, disposed in the non-display area NA. However, the non-display area NA may also include an LTPS thin-film transistor.

[0120] A protective layer 721 is disposed below the second transistor 730 in the non-display area NA (in other words, below the second transistor 730). The protective layer 721 may be configured to overlap with and protect the second transistor 730. The protective layer 721 may be made of the same material as the protective layer 121 in the display area AA and formed by the same process as the protective layer 121 in the display area AA.

[0121] An auxiliary electrode 741 is disposed above the second transistor 730 in the non-display area NA. Specifically, the auxiliary electrode 741 can be disposed between the second cladding layer 114 and the first cladding layer 150, and is configured to completely overlap with the second transistor 730. Additionally, the auxiliary electrode 741 can be electrically connected to the drain electrode 734 of the second transistor 730. The auxiliary electrode 741 can be configured as a single layer or multiple layers made of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and their alloys. In particular, the auxiliary electrode 741 can be made of titanium, which has hydrogen trapping properties. Therefore, the auxiliary electrode 741 can serve as a second hydrogen barrier layer, and simultaneously as an auxiliary electrode for connecting the second transistor 730 and the third hydrogen barrier layer 761. The auxiliary electrode 741 can be made of the same material as the auxiliary electrode 141 in the display area AA and formed using the same process as the auxiliary electrode 141 in the display area AA.

[0122] A third hydrogen barrier layer 761 is disposed on the first overlay layer 150 in the non-display area NA and is configured to overlap with the second transistor 730. Furthermore, the third hydrogen barrier layer 761 can be electrically connected to the second transistor 730 via an auxiliary electrode 741. The third hydrogen barrier layer 761 can be made of titanium. The third hydrogen barrier layer 761 can be made of the same material as the first hydrogen barrier layer 161 and formed using the same process as the first hydrogen barrier layer 161.

[0123] According to the display device 700 based on this embodiment of the present disclosure, a third hydrogen barrier layer 761 is also disposed in the non-display area NA. In this case, the third hydrogen barrier layer 761 can be disposed to overlap with the second transistor 730. That is, as Figure 7 As shown, the second transistor 730 in the non-display area NA can be covered by a third hydrogen barrier layer 761. Therefore, hydrogen generated by the packaging unit 190 can be prevented from diffusing to the second transistor 730 disposed in the non-display area NA.

[0124] Furthermore, an auxiliary electrode 741, serving as the second hydrogen barrier layer, can be disposed between the third hydrogen barrier layer 763 and the second transistor 730. In this case, the auxiliary electrode 741 can be configured to overlap with the second transistor 730. Therefore, a dual structure of hydrogen barrier layers can be formed between the package unit 190 and the second transistor 730, thereby further improving the hydrogen barrier effect.

[0125] The auxiliary electrode 741 and the third hydrogen barrier layer 761 can be patterned to correspond to each of the plurality of second transistors 730 disposed in the non-display area NA. That is, a plurality of auxiliary electrodes 741 and a plurality of third hydrogen barrier layers 761 can be disposed, and the plurality of auxiliary electrodes 741 and the plurality of third hydrogen barrier layers 761 can overlap with the plurality of second transistors 730 respectively. Furthermore, the plurality of auxiliary electrodes 741 can be spaced apart from each other. The plurality of third hydrogen barrier layers 761 can be spaced apart from each other. Therefore, the first coating layer 150 and the second coating layer 114 can each include areas exposed and not covered by the auxiliary electrodes 741 and the third hydrogen barrier layers 761. Therefore, the fumes generated during the formation of the coating layers 114 and 150 can be easily discharged. Furthermore, the degradation of the organic layer 172 caused by fumes and the separation between the plurality of layers of the display device 700 can be minimized, thereby improving the reliability of the display device 700.

[0126] The auxiliary electrode 741 and the third hydrogen barrier layer 761 can be electrically connected to the second transistor 730. Specifically, the second transistor 730 can be electrically connected to the third hydrogen barrier layer 761 via the auxiliary electrode 741. Therefore, resistance can be reduced, thereby improving power consumption.

[0127] Exemplary embodiments of this disclosure can also be described as follows:

[0128] According to one aspect of this disclosure, a display device includes: a substrate including a display area and a non-display area; a first covering layer located above the substrate and including a base and a protrusion projecting from the base; a first hydrogen barrier layer located on the top surface of the protrusion in the display area; a first electrode covering the base and the first hydrogen barrier layer; a dam located on a portion of the first electrode; an organic layer located on the first electrode and the dam; and a second electrode located on the organic layer.

[0129] The base may include an exposed area exposed by the protrusion. The first hydrogen barrier layer may be configured to surround the exposed area.

[0130] The first hydrogen barrier layer can be configured in a closed-loop shape to contact the edge of the first electrode.

[0131] The first hydrogen barrier layer may be made of titanium (Ti).

[0132] The display device may further include a transistor located beneath a first coating layer in the display area. The transistor may be electrically connected to the first electrode through the first hydrogen barrier layer.

[0133] The first electrode may include a reflective layer and a transparent conductive layer located on the reflective layer.

[0134] The display device may further include: a transistor disposed below the first coating layer; a second coating layer located between the transistor and the first coating layer; and a second hydrogen barrier layer located between the first coating layer and the second coating layer.

[0135] The second hydrogen barrier layer can be made of titanium (Ti).

[0136] The second hydrogen barrier layer may include a plurality of sub-hydrogen barrier layers spaced apart from each other.

[0137] The transistor can be disposed in the display area. The second hydrogen barrier layer can be disposed to overlap with the transistor.

[0138] The transistor can be disposed in the non-display area. The second hydrogen barrier layer can be disposed to overlap with the transistor.

[0139] The second hydrogen barrier layer can be connected to one of the source and drain electrodes of the transistor.

[0140] The display device may further include: a transistor located below a first cladding layer in the non-display area; and another hydrogen barrier layer (e.g., a third hydrogen barrier layer) located on the first cladding layer and overlapping the transistor.

[0141] The other hydrogen barrier layer (or the third hydrogen barrier layer) may be disposed on the same layer as the first hydrogen barrier layer and made of the same material as the first hydrogen barrier layer.

[0142] The display device may further include a transistor located beneath a first cladding layer in the display area. The active layer of the transistor may be made of oxide semiconductor.

[0143] The display device may further include an encapsulation unit disposed on the second electrode.

[0144] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are exemplary in all respects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the appended claims, and all technical concepts within the equivalent scope thereof should be understood to fall within the scope of the present disclosure.

Claims

1. A display device comprising: A substrate, the substrate including a display area and a non-display area; A first covering layer is located above the substrate and includes a base and a protrusion protruding from the base; A first hydrogen barrier layer is located on the top surface of the protrusion in the display area; A first electrode, the first electrode covering the base and the first hydrogen barrier layer; A dam located on a portion of the first electrode; An organic layer located on the first electrode and the embankment; as well as The second electrode is located on the organic layer. The first hydrogen barrier layer is spaced apart from the top surface of the base, such that no first hydrogen barrier layer is disposed between the top surface of the base and the first electrode. The first hydrogen barrier layer is made of a material that can block hydrogen and can be used as a mask for etching the first coating layer.

2. The display device according to claim 1, wherein, The base includes an exposed area exposed by the protrusion, and The first hydrogen barrier layer is configured to surround the exposed area.

3. The display device according to claim 1, wherein, The first hydrogen barrier layer is configured in a closed-loop shape to contact the edge of the first electrode.

4. The display device according to claim 1, wherein, The first hydrogen barrier layer is made of titanium (Ti).

5. The display device as claimed in claim 1, wherein, The display device further includes: The transistor located beneath the first covering layer in the display area; The transistor is electrically connected to the first electrode through the first hydrogen barrier layer.

6. The display device according to claim 1, wherein, The first electrode includes a reflective layer and a transparent conductive layer located on the reflective layer.

7. The display device as claimed in claim 1, wherein, The display device further includes: The transistor located beneath the first coating layer; A second cladding layer located between the transistor and the first cladding layer; and A second hydrogen barrier layer located between the first coating layer and the second coating layer.

8. The display device according to claim 7, wherein, The second hydrogen barrier layer is made of titanium (Ti).

9. The display device according to claim 7, wherein, The second hydrogen barrier layer comprises a plurality of sub-hydrogen barrier layers spaced apart from each other.

10. The display device according to claim 7, wherein, The transistor is disposed in the display area, and The second hydrogen barrier layer is configured to overlap with the transistor.

11. The display device according to claim 7, wherein, The transistor is disposed in the non-display area, and The second hydrogen barrier layer is configured to overlap with the transistor.

12. The display device according to claim 7, wherein, The second hydrogen barrier layer is connected to one of the source and drain electrodes of the transistor.

13. The display device as claimed in claim 1, wherein, The display device further includes: The transistor located beneath the first overlay layer in the non-display area; and Another hydrogen barrier layer is located on the first coating layer and overlaps with the transistor.

14. The display device according to claim 13, wherein, The other hydrogen barrier layer is disposed on the same layer as the first hydrogen barrier layer and is made of the same material as the first hydrogen barrier layer.

15. The display device as claimed in claim 1, wherein, The display device further includes: The transistor located beneath the first covering layer in the display area, The active layer of the transistor is made of oxide semiconductor.

16. The display device according to claim 1, wherein, The display device further includes an encapsulation unit disposed on the second electrode.

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