Display panel and display device

Abstract

This application provides a display panel and a display device, relating to the field of display technology. The display panel includes a first region and a second region, and further includes: a substrate; an array layer; a light-emitting layer including a plurality of light-emitting elements located in the first region; a first groove located in the second region, the first groove being formed by recessing the surface of the array layer away from the substrate towards the substrate side; a first reflective film including at least one first sub-reflective film; the first sub-reflective film being at least partially located on the sidewall of the first groove along a direction parallel to the plane of the substrate; the first sub-reflective film including a first dielectric layer and a second dielectric layer, the first dielectric layer being located between the sidewall of the first groove and the second dielectric layer along a direction from the first region to the second region, the refractive index of the first dielectric layer being greater than the refractive index of the second dielectric layer. The first dielectric layer and the second dielectric layer, with different refractive indices, reflect light emitted by adjacently arranged light-emitting elements to reduce the influence of light on the active layer.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more specifically, to a display panel and a display device. Background Technology

[0002] When the light-emitting elements in the display panel are working, some of the light emitted can reach the active layer of the display panel, and some of the natural light can also reach the active layer of the display panel. Therefore, the light emitted by the light-emitting elements and the natural light shining on the active layer can cause the corresponding transistors in the display panel to have abnormal characteristics, thereby affecting the display effect of the display device. Summary of the Invention

[0003] In view of this, the present invention provides a display panel and a display device to ensure the normal operation of transistors in the display panel.

[0004] In a first aspect, this application provides a display panel, the display panel including a first area and a second area, the display panel further including:

[0005] Substrate;

[0006] An array layer is located on one side of the substrate;

[0007] A light-emitting layer, located on the side of the array layer away from the substrate, includes a plurality of light-emitting elements, wherein the light-emitting elements are located in the first region;

[0008] A first groove, located in the second region, is formed by the surface of the array layer on the side away from the substrate being recessed toward the substrate side;

[0009] A first reflective film includes at least one first sub-reflective film; the first sub-reflective film is at least partially located on the sidewall of the first groove; the first sub-reflective film includes a first dielectric layer and a second dielectric layer, the first dielectric layer being located between the sidewall of the first groove and the second dielectric layer, and the refractive index of the first dielectric layer being greater than the refractive index of the second dielectric layer.

[0010] Secondly, this application provides a display device including the aforementioned display panel.

[0011] Compared with the prior art, the display panel and display device provided by the present invention achieve at least the following beneficial effects:

[0012] This application provides a display panel and a display device. A light-emitting element is disposed in a first region of the display panel, and a first recess is disposed in a second region of the display panel. A first dielectric layer and a second dielectric layer with different refractive indices are disposed on the sidewall of the first recess, with the first dielectric layer positioned between the sidewall of the first recess and the second dielectric layer. The first dielectric layer has a higher refractive index. This allows the first and second dielectric layers with different refractive indices to reflect light emitted by adjacent light-emitting elements, reducing the impact of light emitted by adjacent light-emitting elements on the active layer, thereby avoiding abnormal transistor characteristics and improving the display effect of the display device.

[0013] Of course, any product implementing this invention does not necessarily need to achieve all of the technical effects described above at the same time.

[0014] Other features and advantages of the invention will become clear from the following detailed description of exemplary embodiments of the invention with reference to the accompanying drawings. Attached Figure Description

[0015] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the invention and, together with their description, serve to explain the principles of the invention.

[0016] Figure 1 The image shown is a top view of a display panel provided in an embodiment of this application;

[0017] Figure 2 The image shown is provided in an embodiment of this application. Figure 1 A cross-sectional view of AA';

[0018] Figure 3 The image shown is provided in an embodiment of this application. Figure 1 Another cross-sectional view of AA';

[0019] Figure 4 The image shown is a schematic diagram of a first reflective film provided in an embodiment of this application;

[0020] Figure 5 The image shown is provided in an embodiment of this application. Figure 1 Another cross-sectional view of AA';

[0021] Figure 6 The image shown is a cross-sectional view of a light-emitting element provided in an embodiment of this application;

[0022] Figure 7 The image shown is provided in an embodiment of this application. Figure 1 Another cross-sectional view of AA';

[0023] Figure 8 The image shown is another cross-sectional view of the light-emitting element provided in an embodiment of this application;

[0024] Figure 9 The image shown is provided in an embodiment of this application. Figure 1 Another cross-sectional view of AA';

[0025] Figure 10 The image shown is another cross-sectional view of the light-emitting element provided in an embodiment of this application;

[0026] Figure 11 The image shown is provided in an embodiment of this application. Figure 1 Another cross-sectional view of AA';

[0027] Figure 12 The diagram shown is a schematic representation of a display device provided in an embodiment of this application. Detailed Implementation

[0028] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention.

[0029] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the invention or its application or use.

[0030] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.

[0031] In all the examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0032] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0033] When the light-emitting elements in the display panel are working, some of the light emitted can reach the active layer of the display panel, and some of the natural light can also reach the active layer of the display panel. Therefore, the light emitted by the light-emitting elements and the natural light shining on the active layer can cause the corresponding transistors in the display panel to have abnormal characteristics, thereby affecting the display effect of the display device.

[0034] In view of this, the present invention provides a display panel and a display device to ensure the normal operation of transistors in the display panel.

[0035] Figure 1The image shown is a top view of a display panel provided in an embodiment of this application. Figure 2 The image shown is provided in an embodiment of this application. Figure 1 Please refer to a cross-sectional view of AA'. Figure 1 and Figure 2 This application provides a display panel 100, which includes a first area 10 and a second area 20. The display panel 100 also includes:

[0036] Substrate 30;

[0037] Array layer 40 is located on one side of substrate 30;

[0038] The light-emitting layer 50 is located on the side of the array layer 40 away from the substrate 30, and includes a plurality of light-emitting elements 51, wherein the light-emitting elements 51 are located in the first region 10;

[0039] The first groove 55 is located in the second region 20. The first groove 55 is formed by the recess of the surface of the array layer 40 away from the substrate 30 toward the substrate 30.

[0040] The first reflective film 60 includes at least one first sub-reflective film 61; the first sub-reflective film 61 is at least partially located on the sidewall 551 of the first groove 55; the first sub-reflective film 61 includes a first dielectric layer 611 and a second dielectric layer 612, the first dielectric layer 611 is located between the sidewall 551 of the first groove 55 and the second dielectric layer 612, and the refractive index of the first dielectric layer 611 is greater than the refractive index of the second dielectric layer 612.

[0041] Specifically, this application provides a display panel 100, the display area of ​​which may include a first area 10 and a second area 20. The first area 10 may be an area for displaying an image, i.e., a light-emitting area. The transmittance of the second area 20 may be set to be greater than the transmittance of the first area 10. For example, the second area 20 may be a transparent area. It should be added that the display panel 100 including the transparent area may be a transparent display panel.

[0042] The display panel 100 provided in this application may include at least a substrate 30, an array layer 40, and a light-emitting layer 50 stacked together. The light-emitting layer 50 is located on the side of the array layer 40 away from the substrate 30. The light-emitting layer 50 may be provided with a plurality of light-emitting elements 51 located in a first region 10. The array layer 40 includes a pixel circuit (not shown in the figure). The pixel circuit may be disposed together with the light-emitting elements 51 in the first region 10. The pixel circuit may include components such as transistors 44. The light-emitting elements 51 may be electrically connected to at least some of the transistors 44 in the array layer 40, and the light-emitting elements 51 are controlled by the transistors 44 in the array layer 40. The display panel 100 also includes a first groove 55, which may be disposed in a second region 20. Specifically, the first groove 55 may be formed by recessing the surface of the array layer 40 away from the substrate 30 toward the substrate 30. Specifically, the first groove 55 may be formed by removing part of the insulating layer along the surface of the array layer 40 away from the substrate 30 toward the substrate 30, thereby also improving the transmittance of the second region 20 by removing part of the insulating layer.

[0043] Based on the above-described structure of the display panel 100, this application provides an optional configuration method in which the display panel 100 further includes a first reflective film 60, which may include at least a first sub-reflective film 61. The first sub-reflective film 61 is composed of a first dielectric layer 611 and a second dielectric layer 612 stacked together. Specifically, along a direction parallel to the plane of the substrate 30, the first sub-reflective film 61 may be disposed on the sidewall 551 of the first groove 55. At the same time, along a direction from the first region 10 to the second region 20, the first dielectric layer 611 may be disposed between the sidewall 551 of the first groove 55 and the second dielectric layer 612. The refractive index of the first dielectric layer 611 is greater than the refractive index of the second dielectric layer 612. That is, when the first reflective film 60 includes a first sub-reflective film 61, the first dielectric layer 611 with a relatively large refractive index in the first sub-reflective film 61 can be set closer to the first groove 55, and the second dielectric layer 612 with a relatively small refractive index can be set on the side of the first dielectric layer 611 away from the first groove 55.

[0044] The first reflective film 60 described above is composed of at least a first dielectric layer 611 and a second dielectric layer 612 with different refractive indices, and the second dielectric layer 612 with a smaller refractive index is closer to the array layer 40 of the first region 10 adjacent to the first groove 55. Therefore, when the light-emitting elements 51 respectively disposed on both sides of the first groove 55 are the first light-emitting element and the second light-emitting element, when the light L1 emitted by the first light-emitting element is emitted towards the second light-emitting element, when the light L1 is emitted to the first reflective film 60, the first dielectric layer 611 and the second dielectric layer 612 with different refractive indices can reflect the light L1 as much as possible to form reflected light L2, thereby reducing or even preventing the light emitted by the first light-emitting element from illuminating the active layer corresponding to the second light-emitting element. Among them, the first dielectric layer 611 with a larger refractive index is disposed in the first dielectric layer 611. The second dielectric layer 612, with a lower refractive index, faces the side from which the light L1 comes. The first dielectric layer 611 is an optically denser medium, and the second dielectric layer 612 is an optically less dense medium. When the light L1 emitted by the light-emitting element 51 travels from the optically denser medium to the optically less dense medium, total internal reflection occurs at the interface between the optically denser and optically less dense media, i.e., the surface where the first dielectric layer 611 and the second dielectric layer 612 are in contact. This allows the first reflective film 60 to reflect the light L1 into the light L2. Therefore, by setting the first reflective film 60, the light received by the active layer of the array layer 40 can be reduced or even avoided. This reduces or even avoids the influence of light intensity on the output current of the active layer of the transistor 44 after it is illuminated, thereby preventing the transistor 44 from exhibiting abnormal characteristics and ensuring its normal operation, thus guaranteeing the display stability of the display device.

[0045] It should be noted that, Figure 1 The first zone 10 and the second zone 20 shown are alternated in the first direction and the second direction, but this is only one optional embodiment provided by this application, and this application is not limited thereto; in other embodiments, there may be other optional settings, such as two first zones 10 are arranged adjacently with one second zone 20, etc. Users can set the arrangement of the first zone 10 and the second zone 20 in the display panel 100 according to their own needs.

[0046] It should be added that, Figure 2 The illustration shows only one embodiment with one transistor corresponding to one light-emitting element 51, but this application is not limited to this. The pixel circuit corresponding to one light-emitting element 51 may also include two, three, four, or other numbers of transistors 44. In addition, the first region 10 may also include multiple light-emitting elements 51. This application does not limit the first region 10 to only one light-emitting element 51.

[0047] It should be noted that the first groove 55 can be formed by removing a portion of the insulating layer from the surface of the array layer 40 away from the substrate 30 towards the substrate 30. That is, the sidewall 551 of the first groove 55 can specifically be the sidewall of the insulating layer. The aforementioned sidewall 551 of the first groove 55 is a virtual sidewall. Here, the first groove 55 is equivalent to a recessed portion. The sidewall 551 of the first groove 55 facing the adjacent light-emitting element 51 and pixel circuit along the plane of the substrate 30 is defined as the sidewall 551 of the first groove 55. Figure 2 In the illustrated embodiment, the provision of a first reflective film 60 on all sidewalls 551 of the first groove 55 is merely one optional arrangement provided by this application. However, this application is not limited to this arrangement. Alternatively, only some sidewalls 551 of the first groove 55 may be covered with the first reflective film 60. It is also possible to choose to provide the first reflective film 60 on some sidewalls 551 of the first groove 55, and to leave some sidewalls 551 of the first groove 55 without the first reflective film 60. Furthermore, it is also possible to provide the first reflective film 60 on the sidewalls 551 of each first groove 55 in the display panel 100. That is, the user can choose whether and how to provide the first reflective film 60 on the sidewalls 551 of the first groove 55 according to actual needs.

[0048] It should also be noted that the aforementioned first sub-reflective film 61 includes a first dielectric layer 611 and a second dielectric layer 612 stacked together. The first dielectric layer 611 and the second dielectric layer 612 can have the same shape and surface area, that is, along the direction perpendicular to the plane of the sidewall 551 of the first groove 55, the orthographic projections of the first dielectric layer 611 and the second dielectric layer 612 are completely coincident. Of course, this application is not limited to this; along the direction perpendicular to the plane of the sidewall 551 of the first groove 55, the orthographic projections of the first dielectric layer 611 and the second dielectric layer 612 included in the first sub-reflective film 61 can also be configured to partially overlap.

[0049] It should also be noted that the first sub-reflective film 61, formed by the first dielectric layer 611 and the second dielectric layer 612 with different reflectivities, is specifically a DBR (distributed Bragg reflection) structure.

[0050] Please refer to Figure 2 It should be further noted that transistor 44 can be composed of the active layer 41, gate electrode 42, first electrode 432, and second electrode 431 as shown in the figure. The light-emitting layer 50 includes a light-emitting element 51, which includes a light-emitting functional layer 53 and an electrode 52; however... Figure 2The arrangement shown is merely one possible configuration of transistor 44 and light-emitting layer 50, and this application is not limited to this. It should be added that the light-emitting element 51 can be OLED, Micro LED, or Mini LED, etc. Furthermore, Figure 2 The electrode 52 of the light-emitting element 51 facing the substrate 30 includes a first electrode and a second electrode. The first electrode is electrically connected to a transistor, and the second electrode is electrically connected to a fixed voltage signal line (not shown) in the array layer 40. It should also be noted that one of the first electrode 432 and the second electrode 431 is the source electrode, and the other is the drain electrode.

[0051] Figure 3 The image shown is provided in an embodiment of this application. Figure 1 For another cross-sectional view of AA', please refer to... Figure 1 and Figure 3 Optionally, the first reflective film 60 includes a plurality of first sub-reflective films 61 stacked together.

[0052] Specifically, this application also provides an optional configuration in which the first reflective film 60 may include multiple stacked first sub-reflective films 61 along a direction parallel to the plane of the substrate 30; for example... Figure 3 As shown, when the first reflective film 60 includes two stacked first sub-reflective films 61, the first reflective film 60 is specifically a structure consisting of a first dielectric layer 611, a second dielectric layer 612, and another first dielectric layer 611 and a second dielectric layer 612 stacked sequentially. By including multiple first sub-reflective films 61 in the first reflective film 60, this application can improve the light reflection effect of the first reflective film 60 and further reduce the possibility of light passing through the first reflective film 60 and reaching the array layer 40.

[0053] Please refer to Figures 1-3 It should be noted that this application does not limit the number of first sub-reflective films 61 included in a first reflective film 60, and it is possible to optionally set one first sub-reflective film 61 in a first reflective film 60 (e.g., Figure 2 (as shown), 2 first sub-reflective films 61 (as shown) Figure 3 As shown), there are 3 first sub-reflective films 61, etc. The user can set the number of first sub-reflective films 61 included in the first reflective film 60 according to the requirements.

[0054] Figure 4 The diagram shown is a schematic representation of a first reflective film provided in an embodiment of this application. Please refer to... Figure 1 , Figure 3 and Figure 4Optionally, among the multiple stacked first sub-reflective films 61, at least some of the first sub-reflective films 61 have different thicknesses along the direction perpendicular to the sidewall 551 of the first groove 55.

[0055] Specifically, this application also provides an optional configuration where, when a first reflective film 60 includes multiple stacked first sub-reflective films 61, at least some of the first sub-reflective films 61 can be configured to have different thicknesses along a direction perpendicular to the plane of the sidewall 551 of the first groove 55. For example, when a first reflective film 60 includes three stacked first sub-reflective films 61, one of the first sub-reflective films 61 can be configured to have a thickness of D1, another of the first sub-reflective films 61 to have a thickness of D2, and the last of the first sub-reflective films 61 to have a thickness of D3, where D1 ≠ D2 ≠ D3. In this case, the first sub-reflective film 61 with a thickness of D1 can be specifically configured to reflect a first color of light, the first sub-reflective film 61 with a thickness of D2 can be specifically configured to reflect a second color of light, and the first sub-reflective film 61 with a thickness of D3 can be specifically configured to reflect a third color of light, wherein the first color of light, the second color of light, and the third color of light are three different colors of light.

[0056] Please continue to refer to Figures 1-3 Optionally, the refractive index of the first dielectric layer 611 is α1, and the refractive index of the second dielectric layer 612 is α2, where α1-α2≥0.4.

[0057] Specifically, this application also provides an optional configuration where the refractive indices of the first dielectric layer 611 and the second dielectric layer 612 included in the first sub-reflective film 61 are different. Taking the refractive index of the first dielectric layer 611 as α1 and the refractive index of the second dielectric layer 612 as α2 as an example, α1-α2 ≥ 0.4 can be selected. If α1-α2 < 0.4, the difference in refractive indices between the first dielectric layer 611 and the second dielectric layer 612 will be relatively small, making it difficult to form a DBR structure, and thus difficult to achieve reflection and total internal reflection of light incident into the first sub-reflective film 61. Therefore, this application sets the difference in refractive indices between the first dielectric layer 611 and the second dielectric layer 612 to be equal to or greater than 0.4. The refractive index is set at 0.4, which makes the refractive index difference between two adjacent dielectric layers larger, so that the light incident on the first sub-reflective film 61 can achieve total internal reflection. This is to enable the first sub-reflective film 61 to reflect, or even completely reflect, the light emitted by the light-emitting element 51 that is adjacent to it when it is set on the side wall 551 of the first groove 55. This prevents the light from shining into the active layer 41 corresponding to the adjacent light-emitting element 51, thereby reducing or even preventing the output current of the active layer 41 of the transistor 44 from being affected by the light intensity after being illuminated. This avoids the transistor 44 from having abnormal characteristics, ensures the normal operation of the transistor 44, and thus ensures the display stability of the display device.

[0058] It should be added that this application provides an optional configuration in which the first reflective film 60 is made of insulating materials, wherein the first dielectric layer 611 with a higher refractive index is made of materials including but not limited to TiO2, Ta2O5, HfO2, Ti3O5, and Nb2O5, and the second dielectric layer 612 with a lower refractive index is made of materials including but not limited to SiO2 and SiN. x Al2O3, MgF.

[0059] It should also be added that the refractive index of the dielectric layer with a higher refractive index can be set to be greater than 2, and the refractive index of the dielectric layer with a lower refractive index can be set to be less than 1.5. In this case, the aforementioned α1-α2≥0.5 can also be selected. The greater the difference in refractive index between two adjacent dielectric layers, the better the light reflection effect of the resulting reflective film.

[0060] Please continue to refer to Figure 1 , Figure 2 and Figure 4 Optionally, along the direction perpendicular to the sidewall 551 of the first groove 55, the thickness of the first dielectric layer 611 is d1, and the thickness of the second dielectric layer 612 is d2, where d1 = n1λ1 / 4 and d2 = n2λ1 / 4.

[0061] Where λ1 is the wavelength of the light incident on the surface of the first reflective film 60, n1≥1, n2≥1, and n1 and n2 are both positive integers.

[0062] Specifically, this application also provides an optional setting method, such as... Figure 2 As shown, along the direction perpendicular to the plane where the sidewall 551 of the first groove 55 is located, taking the thickness of the first dielectric layer 611 as d1 and the thickness of the second dielectric layer 612 as d2 as an example, d1 = n1λ1 / 4 and d2 = n2λ1 / 4 can be set, where λ is the wavelength of the light incident on the surface of the first reflective film 60. Furthermore, the thickness of the first sub-reflective film 61 is d1+d2=nλ1 / 4, where λ1 is the wavelength of the light incident on the surface of the first reflective film 60, and n is a positive integer. With this configuration, the first sub-reflective film 61 can form a DBR structure, which includes a first dielectric layer 611 and a second dielectric layer 612 with different refractive indices. When light shines on the surface where the first dielectric layer 611 and the second dielectric layer 612 are in contact, total internal reflection can occur, thereby realizing the reflection effect of the first sub-reflective film 61 on the light and reducing the possibility of light escaping to the array layer 40 side through the first sub-reflective film 61. Moreover, multiple first sub-reflective films 61 can be provided in the first reflective film 60, which can further reduce the possibility of light escaping to the array layer 40 side through the first reflective film 60.

[0063] Furthermore, since the thickness of the first sub-reflective film 61 is directly related to the wavelength λ of the light incident on its surface, the user can differentiate and specifically set the thickness of the first sub-reflective film 61 according to the color of the light they actually want to reflect; for example, when the first sub-reflective film 61 is used for total reflection of red light, if the wavelength of the red light is λ... 11 Then, the first sub-reflective film 61 can be set to d1+d2=nλ. 11 / 4; Similarly, for example, when the first sub-reflective film 61 is used for total internal reflection of green light, if the wavelength of the green light is λ 12 Then, the first sub-reflective film 61 can be set to d1+d2=nλ. 12 / 4. Furthermore, when it is necessary to set the first reflective film 60 to reflect multiple colors of light simultaneously, the first reflective film 60 can be configured to include first sub-reflective films 61 of different thicknesses corresponding to the wavelengths of each color, so as to achieve targeted reflection of various colors. That is, by setting the thickness of the first sub-reflective films 61 used to reflect different colors of light, the thickness of the first sub-reflective films 61 is determined according to the wavelength of the color light that needs to be reflected. It is sufficient to set the thickness of the first sub-reflective films 61 to be equal to 1 / 4 of an integer multiple of the wavelength of the color light that needs to be reflected.

[0064] Therefore, the first sub-reflective film 61 of different thicknesses can be used to reflect light of different colors, thereby achieving specific reflection of light of different colors, so as to achieve the user's specific reflection processing of light of the desired color.

[0065] It should also be noted that when the first sub-reflective film 61 needs to satisfy the following conditions: the thickness d1 of its corresponding first dielectric layer 611 is d1 = n1λ1 / 4 and the thickness d2 of the second dielectric layer 612 is d2 = n2λ1 / 4, n1 can be set to be equal to n2, or n1 and n2 can be set to be unequal. This application does not make a specific limitation on this. At this time, λ1 is still the wavelength of the light incident on the surface of the first reflective film 60, and different colors of light correspond to their different wavelengths.

[0066] It should also be noted that since n1 and n2 provided in this application are positive integers, this application does not limit the specific values ​​of n1 and n2. n1 and n2 can be integers such as 1, 2, 3, 4, etc. Therefore, this application does not limit the thickness of the first dielectric layer 611 and the second dielectric layer 612 included in the first sub-reflective film 61 to be the same. That is, the thickness of the first dielectric layer 611 and the second dielectric layer 612 included in the first sub-reflective film 61 can also be different. Users can select the thickness of the first dielectric layer 611 and the second dielectric layer 612 included in the first sub-reflective film 61 according to their own needs.

[0067] Figure 5 The image shown is provided in an embodiment of this application. Figure 1 For another cross-sectional view of AA', please refer to... Figures 1-3 and Figure 5 Optionally, the first reflective film 60 covers the sidewall 551 of the first groove 55 along a direction perpendicular to the sidewall 551 of the first groove 55.

[0068] Specifically, this application also provides an optional configuration method in which a first reflective film 60 can be provided to cover the sidewall 551 of the first groove 55 along the extension direction perpendicular to the plane where the sidewall 551 of the first groove 55 is located. Two optional configuration methods are provided here. The first configuration method is as follows: Figure 2 , Figure 3 As shown, the first reflective film 60 covers the entire sidewall 551 of the sidewall 551 of the first groove 55. The second configuration is as follows: Figure 5 As shown, the first reflective film 60 covers a portion of the sidewall 551 of the first groove 55.

[0069] It should be noted that if the first reflective film 60 covers the entire sidewall 551 of the first groove 55, the light emitted by the adjacent light-emitting element 51 will not enter the active layer 41 corresponding to the light-emitting element 51 from any part of the sidewall 551 of the first groove 55. This reduces or even avoids the influence of light intensity on the output current of the active layer of the transistor 44 after it is illuminated, thereby avoiding the problem of abnormal characteristics of the transistor 44, ensuring the normal operation of the transistor 44, and thus ensuring the display stability of the display device.

[0070] Please refer to Figure 1 and Figure 2 Optionally, along a direction perpendicular to the plane of the substrate 30, the height H1 of the first groove 55 is at least equal to the distance between the substrate 30 and the side surface of the array layer 40 away from the substrate 30.

[0071] Specifically, this application also provides an optional configuration in which the height H1 of the first groove 55 is equal to the distance between the surface of the substrate 30 facing the light-emitting layer 50 and the surface of the array layer 40 away from the substrate 30 along the direction perpendicular to the plane of the substrate 30. This configuration ensures that no other structural components are disposed between the surface of the light-emitting layer 50 away from the substrate 30 and the substrate 30 between two adjacent light-emitting elements 51. Specifically, the first groove 55 removes the insulating layer corresponding to this area, thereby improving the transmittance of the second region 20 by removing at least part of the insulating layer. In some embodiments, the area between two adjacent light-emitting elements 51 can be made transparent, thereby making the display panel 100 a transparent display panel.

[0072] Figure 6 The image shown is a cross-sectional view of a light-emitting element provided in an embodiment of this application. Please refer to... Figure 1 and Figure 6 Optionally, it also includes a second reflective film 70, which is located on the side of the array layer 40 facing the light-emitting element 51. The second reflective film 70 includes at least one second sub-reflective film 71. The second sub-reflective film 71 includes a third dielectric layer 713 and a fourth dielectric layer 714 along the side of the array layer 40 pointing towards the light-emitting element 51. The third dielectric layer 713 is located between a portion of the structure of the light-emitting element 51 and the fourth dielectric layer 714. The refractive index of the third dielectric layer 713 is greater than the refractive index of the fourth dielectric layer 714.

[0073] Specifically, this application also provides an optional configuration method in which a second reflective film 70 can be further disposed in the display panel 100. The second reflective film 70 can be disposed on the side of the array layer 40 facing the light-emitting element 51. Here, the second reflective film 70 may include at least one second sub-reflective film 71. Each second sub-reflective film 71 may include a third dielectric layer 713 and a fourth dielectric layer 714 stacked together. The third dielectric layer 713 can be disposed between the light-emitting element 51 and the fourth dielectric layer 714. At this time, the refractive index of the third dielectric layer 713 can be set to be greater than the refractive index of the fourth dielectric layer 714. That is, the refractive index of the third dielectric layer 713, which is closer to the light-emitting functional layer 53 of the light-emitting element 51, is relatively larger.

[0074] The second reflective film 70 described above is composed of at least a third dielectric layer 713 and a fourth dielectric layer 714 with different refractive indices, with the fourth dielectric layer 714, which has a lower refractive index, positioned closer to the array layer 40. Therefore, when light L1 emitted from the light-emitting functional layer 53 of the light-emitting element 51 is emitted towards the substrate 30, the third dielectric layer 713 and the fourth dielectric layer 714, with their different refractive indices, can reflect the light L1 as much as possible to form a reflected light L2, thereby reducing or even preventing light L1 from illuminating the active layer. Specifically, the third dielectric layer 713, with a higher refractive index, is positioned on the side of the fourth dielectric layer 714, which has a lower refractive index, facing the light L1. 3 is an optically denser medium, and the fourth medium layer 714 is an optically less dense medium. When the light L1 emitted by the light-emitting element 51 travels from the optically denser medium to the optically less dense medium, total internal reflection occurs at the interface between the optically denser and optically less dense media, that is, at the surface where the third medium layer 713 and the fourth medium layer 714 are in contact. This allows the second reflective film 70 to reflect the light L1 into the light L2. Therefore, setting the second reflective film 70 can reduce or even avoid the light received by the active layer of the array layer 40, thereby reducing or even avoiding the influence of light intensity on the output current of the active layer of the transistor 44 after being illuminated. This helps to prevent the transistor 44 from exhibiting abnormal characteristics, ensures the normal operation of the transistor 44, and thus ensures the display stability of the display device.

[0075] The second reflective film 70, disposed between the array layer 40 and the light-emitting functional layer 53 of the light-emitting element 51, can reflect the light emitted by the light-emitting element 51, preventing the light emitted by the light-emitting element 51 from entering the array layer 40 from the surface of the array layer 40 facing the light-emitting element 51. Specifically, when the light emitted by the light-emitting element 51 is emitted to the second reflective film 70, the third dielectric layer 713 and the fourth dielectric layer 714, which have different refractive indices, can reflect the light as much as possible, so as to reduce or even prevent the light emitted by the light-emitting element 51 from shining into its corresponding active layer. Therefore, the second reflective film 70 can reduce or even prevent the light received by the active layer of the array layer 40, thereby reducing or even preventing the output current of the active layer of the transistor 44 from being affected by the light intensity after being illuminated, thus preventing the transistor 44 from having abnormal characteristics, ensuring the normal operation of the transistor 44, and thus ensuring the display stability of the display device.

[0076] It should also be noted that the second sub-reflective film 71, formed by the third dielectric layer 713 and the fourth dielectric layer 714 with different reflectivities, is specifically a DBR (distributed Bragg reflection) structure.

[0077] Similar to the first reflective film 60 described above, this application may also provide a second reflective film 70 comprising multiple stacked second sub-reflective films 71. This application provides two selectable configuration methods: firstly, the thickness of the second sub-reflective films 71 is the same along the direction perpendicular to the plane of the substrate 30; secondly, among the multiple stacked second sub-reflective films 71, at least some of the second sub-reflective films 71 have different thicknesses along the direction perpendicular to the plane of the substrate 30, and the second sub-reflective films 71 with different thicknesses can be used to reflect light of different colors; the refractive index difference between the third dielectric layer 713 and the fourth dielectric layer 714 included in each second sub-reflective film 71 can also be set to be equal to or greater than 0.4, so that the second sub-reflective film 71 can be used to reflect light; along the direction perpendicular to the plane of the substrate 30, the thickness of the third dielectric layer 713 can be set to d3, and the thickness of the fourth dielectric layer 714 can be set to d4, where d3 = n3λ2 / 4 and d4 = n4λ2 / 4. Where d3 is the thickness of the third dielectric layer 713 along the direction perpendicular to the plane of the substrate 30, and d4 is the thickness of the fourth dielectric layer 714 along the direction perpendicular to the plane of the substrate 30. Where λ2 is the wavelength of the light incident on the surface of the second reflective film 70, n3≥1, n4≥1, and n3 and n4 are both positive integers. It should be noted that since the second reflective film 70 is disposed between the light-emitting functional layer 53 and the array layer 40, the thickness of the second sub-reflective film 71 in the second reflective film 70 can be set according to the light emitted by its corresponding light-emitting functional layer 51. Specifically, the light-emitting element 51 may include a red light-emitting element, a green light-emitting element, and a blue light-emitting element, and the wavelength of the red light is λ. 11 The wavelength of green light is λ. 12 The wavelength of blue light is λ. 13 At that time, the thickness of the second reflective film 71 disposed between the red light-emitting element and the array layer 40 can be d3+d4=(n3λ) 11 +n4λ 11 ) / 4, where d3=n3λ 11 / 4, d4=n4λ 11 / 4; Similarly, the thickness of the second reflective film 71 disposed between the green light-emitting element and the array layer 40 can be d3+d4=(n3λ 12 +n4λ 12 ) / 4, where d3=n3λ 12 / 4, d4=n4λ 12 / 4; Similarly, the thickness of the second reflective film 71 disposed between the blue light-emitting element and the array layer 40 can be d3+d4=(n3λ 13 +n4λ 13 ) / 4, where d3=n3λ 13 / 4, d4=n4λ 13 / 4; In addition, it is understood that the light-emitting element 51 may include light-emitting elements of other colors, and this application does not limit it.

[0078] Figure 7 The image shown is provided in an embodiment of this application. Figure 1 For another cross-sectional view of AA', please refer to... Figure 1 , Figure 6 and Figure 7 Furthermore, this application does not limit the area size of the second reflective film 70, such as... Figure 6 As shown, the second reflective film 70 can be optionally configured to cover only a portion of the active layer along a direction perpendicular to the plane of the substrate 30. For example, the second reflective film 70 can be configured to cover only the channel region of the corresponding transistor 44. Figure 7 As shown, the second reflective film 70 can also be configured to completely cover the corresponding active layer 41, as long as the configuration of the second reflective film 70 can reduce or even eliminate the light emitted by the light-emitting element 51 directly irradiating the active layer 41 towards the substrate 30. When the area of ​​the second reflective film 70 is relatively large, in addition to reflecting the light incident on the side of the light-emitting element 51 towards the array layer 40, it can also simultaneously reflect the natural light incident on the side of the array layer 40, thereby simultaneously preventing the light emitted by the light-emitting element 51 and the natural light from irradiating the active layer of the array layer 40.

[0079] It should also be noted that, similar to the first reflective film 60, the second reflective film 70 can also be made of insulating materials. Therefore, depending on the requirements, the second reflective film 70 can be configured to have a contact area with the light-emitting element 51, or the second reflective film 70 can be configured to have no contact area with the light-emitting element 51 at all. This application does not make any specific limitations on this.

[0080] Please refer to Figure 1 , Figure 2 , Figure 6 and Figure 7 It should also be added that, Figure 6 , Figure 7 The second reflective film 70 shown not contacting the light-emitting element 51 is only one optional setting method provided by this application. Alternatively, the second reflective film 70 can be set to contact the light-emitting element 51. In this case, the second reflective film 70 can also be used to support the light-emitting element 51 to improve the compressive strength of the light-emitting element 51 and enhance the stability of the light-emitting element 51.

[0081] It should also be added that the display panel 100 can be configured to include only the first reflective film 60, or as follows: Figure 7 As shown, it includes both a first reflective film 60 and a second reflective film 70, and furthermore, as Figure 6As shown, it is also possible to choose to include only the second reflective film 70 in the display panel 100. Of course, this application does not limit the second reflective film 70 to be provided between the light-emitting functional layer 53 and the array layer 40 of each light-emitting element 51. Users can also choose to provide the second reflective film 70 in the areas corresponding to some light-emitting elements 51 according to their needs.

[0082] Figure 8 The image shown is another cross-sectional view of the light-emitting element provided in an embodiment of this application. Figure 9 The image shown is provided in an embodiment of this application. Figure 1 For another cross-sectional view of AA', please refer to... Figures 1-4 , Figures 6-9 Optionally, the array layer 40 includes an active layer 41;

[0083] It also includes a third reflective film 80, which is located on the side of the active layer 41 facing the substrate 30. The third reflective film 80 includes at least one third sub-reflective film 81. The third sub-reflective film 81 includes a fifth dielectric layer 815 and a sixth dielectric layer 816 along the side of the substrate 30 pointing towards the light-emitting layer 50. The fifth dielectric layer 815 is located between the substrate 30 and the sixth dielectric layer 816, and the refractive index of the fifth dielectric layer 815 is greater than the refractive index of the sixth dielectric layer 816.

[0084] Specifically, this application also provides an optional configuration in which the array layer 40 includes an active layer 41, and a third reflective film 80 can be further disposed in the display panel 100. The third reflective film 80 can be disposed on the side of the active layer 41 facing the substrate 30. The third reflective film 80 here may include at least one third sub-reflective film 81. The third sub-reflective film 81 may include a fifth dielectric layer 815 and a sixth dielectric layer 816 stacked together. The fifth dielectric layer 815 can be disposed between the substrate 30 and the sixth dielectric layer 816. In this case, the refractive index of the fifth dielectric layer 815 can be set to be greater than the refractive index of the sixth dielectric layer 816, that is, the refractive index of the fifth dielectric layer 815 which is closer to the side of the substrate 30 is relatively larger.

[0085] The third reflective film 80 disposed between the active layer 41 and the substrate 30 can reflect light from the side of the substrate 30 away from the light-emitting element 51 onto the side of the substrate 30, preventing light from the side of the substrate 30 away from the light-emitting element 51 from entering the array layer 40 from the surface of the substrate 30 towards the light-emitting element 51. Specifically, when light from the side of the substrate 30 away from the light-emitting element 51 is emitted to the third reflective film 80, the fifth dielectric layer 815 and the sixth dielectric layer 816, which have different refractive indices, can reflect the light as much as possible to reduce or even prevent the light from illuminating their corresponding active layer 41. Therefore, the third reflective film 80 can reduce or even prevent the light received by the active layer 41 of the array layer 40, thereby reducing or even preventing the output current of the active layer 41 of the transistor 44 from being affected by the light intensity after being illuminated, thus preventing the transistor 44 from having abnormal characteristics, ensuring the normal operation of the transistor 44, and thus ensuring the display stability of the display device.

[0086] It should also be noted that the third sub-reflective film 81, formed by the fifth dielectric layer 815 and the sixth dielectric layer 816 with different reflectivities, is specifically a DBR (distributed Bragg reflection) structure.

[0087] Similar to the first reflective film 60 described above, this application can optionally include only one third sub-reflective film 81 in the third reflective film 80, where the thickness of a single third sub-reflective film 81 needs to meet the wavelength of the light it needs to reflect. Alternatively, the third reflective film 80 can include multiple stacked third sub-reflective films 81. In this case, this application provides two selectable configuration methods: first, the thickness of the third sub-reflective films 81 is the same along the direction perpendicular to the plane of the substrate 30; second, the thickness of each third sub-reflective film 81 needs to individually meet the wavelength of the light it needs to reflect, meaning that third sub-reflective films 81 of different thicknesses can be used to reflect light of different colors. Therefore... In the plurality of stacked third sub-reflective films 81, at least some of the third sub-reflective films 81 may have different thicknesses along the direction perpendicular to the plane of the substrate 30. Third sub-reflective films 81 of different thicknesses can be used to reflect light of different colors. The refractive index difference between the fifth dielectric layer 815 and the sixth dielectric layer 816 included in each third sub-reflective film 81 may also be set to be equal to or greater than 0.4, so that the third sub-reflective film 81 can achieve total internal reflection of light. Along the direction perpendicular to the plane of the substrate 30, the thickness of the fifth dielectric layer 815 may be d5, and the thickness of the sixth dielectric layer 816 may be d6, where d5 = n5λ5 / 4 and d6 = n6λ5 / 4. Here, d5 is the thickness of the fifth dielectric layer 815 along the direction perpendicular to the plane of the substrate 30, and d6 is the thickness of the sixth dielectric layer 816 along the direction perpendicular to the plane of the substrate 30. Where λ5 is the wavelength of the light incident on the surface of the third reflective film 80, n5≥1, n6≥1, and both n5 and n6 are positive integers. It should be noted that since the third reflective film 80 is disposed on the side of the active layer 41 facing the substrate 30, the thickness of the third sub-reflective film 81 within the third reflective film 80 can be set according to the color of the light incident on the side of the substrate 30 away from the active layer 41. Specifically, for example, when the light incident on the side facing the substrate 30 includes red, green, and blue light, the wavelength of the red light is λ. 11 The wavelength of green light is λ. 12 The wavelength of blue light is λ. 13 At that time, the thickness of at least one third reflective film 81 can be selected as d5+d6=(n5λ) 11 +n6λ 11 ) / 4, where d5=n5λ 11 / 4, d6=n6λ 11 / 4; Similarly, the thickness of at least one third reflective film 81 can be selected as d5+d6=(n5λ) 12 +n6λ 12 ) / 4, where d5=n5λ 12 / 4, d6=n6λ 12 / 4; Similarly, the thickness of at least one third reflective film 81 can be selected as d5+d6=(n5λ) 13 +n6λ 13 ) / 4, where d5=n5λ 13 / 4, d6=n6λ 13 / 4; In addition, it is understood that the light incident on the side of the substrate 30 away from the active layer 41 may also include other colors, and this application does not limit this.

[0088] Furthermore, this application does not limit the area size of the third reflective film 80. It can be configured such that, along the direction perpendicular to the plane of the substrate 30, the third reflective film 80 only covers the corresponding portion of the active layer 41. For example, the third reflective film 80 can only cover the channel region 411 of the corresponding transistor 44, or the third reflective film 80 can completely cover the corresponding active layer 41, as long as the configuration of the third reflective film 80 can reduce or even eliminate the light emitted from the side away from the substrate 30 that shines on the active layer 41 towards the substrate 30.

[0089] It should also be added that, Figure 9 The third reflective film 80 shown is in contact with the substrate 30 and the active layer 41 respectively. This is only one optional setting provided by this application. Users can also choose to set the third reflective film 80 to only contact the substrate 30 or the active layer 41, or set the third reflective film 80 to be located between the substrate 30 and the active layer 41 and not in contact with either the substrate 30 or the active layer 41.

[0090] It should also be noted that, similar to the first reflective film 60, the third reflective film 80 can also be made of insulating materials. Therefore, depending on the requirements, the third reflective film 80 can be configured to have a contact area with the active layer 41, or the third reflective film 80 can be configured to have no contact area with the active layer 41 at all. This application does not impose specific limitations on this. In addition, if the material used to make the third reflective film 80 includes conductive materials, it is necessary to provide an insulating material between the conductive material and the active layer 41 to avoid the third reflective film 80 affecting the normal operation of the transistor 44 and to ensure that the display panel 100 can operate normally.

[0091] Please refer to Figure 1 , Figure 2 , Figures 6-9 It should also be added that, although this application is attached Figure 9The first area 10 shown in the figure is provided with a first reflective film 60, a second reflective film 70 and a third reflective film 80. However, this application is not limited to this. The display panel 100 may be provided with only the first reflective film 60, or may be provided with both the first reflective film 60 and the second reflective film 70, or may be provided with both the first reflective film 60, the second reflective film 70 and the third reflective film 80, or may be provided with both the first reflective film 60 and the third reflective film 80. In addition, the display panel 100 may be provided with only the third reflective film 80, or may be provided with both the second reflective film 70 and the third reflective film 80.

[0092] Please refer to Figure 1 and Figure 9 Optionally, the active layer 41 includes a channel region 411, and the third reflective film 80 covers at least a portion of the channel region 411 along a direction perpendicular to the plane of the substrate 30.

[0093] Specifically, the active layer 41 in the array layer 40 provided in this application includes a channel region 411. This application provides an optional configuration in which the third reflective film 80 covers part of the channel region 411 along a direction perpendicular to the plane where the substrate 30 is located, or the third reflective film 80 covers all of the channel region 411. Since light irradiates the channel region 411 of the transistor 44, it can cause abnormal leakage current during the operation of the transistor 44, affecting the normal operating performance of the transistor 44. By setting the third reflective film 80 to cover at least part of the channel region 411, it is possible to reduce or even eliminate the light emitted from the side away from the substrate 30 irradiating the channel region 411 of the active layer 41 towards the substrate 30 side, thereby reducing or even avoiding the influence of light intensity on the output current of the active layer 41 of the transistor 44 after being irradiated, thereby avoiding the abnormal characteristic problem of the transistor 44, ensuring the normal operating effect of the transistor 44, and thus ensuring the display stability of the display device.

[0094] Figure 10 The image shown is another cross-sectional view of the light-emitting element provided in an embodiment of this application. Figure 11 The image shown is provided in an embodiment of this application. Figure 1 For another cross-sectional view of AA', please refer to... Figures 1-4 , Figures 6-11 Optionally, the array layer 40 includes an active layer 41;

[0095] It also includes a fourth reflective film 90, which is located on the side of the active layer 41 away from the substrate 30. The fourth reflective film 90 includes at least one fourth sub-reflective film 91. The fourth sub-reflective film 91 includes a seventh dielectric layer 917 and an eighth dielectric layer 918 along the light-emitting layer 50 pointing towards the substrate 30. The seventh dielectric layer 917 is located between the eighth dielectric layer 918 and the light-emitting layer 50. The refractive index of the seventh dielectric layer 917 is greater than the refractive index of the eighth dielectric layer 918.

[0096] Specifically, this application also provides an optional configuration in which the array layer 40 includes an active layer 41, and a fourth reflective film 90 can be further disposed in the display panel 100. The fourth reflective film 90 can be disposed on the side of the active layer 41 away from the substrate 30. Here, the fourth reflective film 90 may include at least one fourth sub-reflective film 91. The fourth sub-reflective film 91 may include a seventh dielectric layer 917 and an eighth dielectric layer 918 stacked together. The seventh dielectric layer 917 can be disposed between the light-emitting layer 50 and the eighth dielectric layer 918. Specifically, it can be disposed between the gate electrode 42 and the active layer 41. At this time, the refractive index of the seventh dielectric layer 917 can be set to be greater than the refractive index of the eighth dielectric layer 918. That is, the refractive index of the seventh dielectric layer 917, which is closer to the light-emitting layer 50 of the substrate 30, is relatively larger.

[0097] The fourth reflective film 90 disposed between the active layer 41 and the light-emitting layer 50 can be used to reflect light from the side of the light-emitting element 51 into the active layer 41. Specifically, when light L7 from the side of the light-emitting element 51 is emitted to the fourth reflective film 90, the seventh dielectric layer 917 and the eighth dielectric layer 918, which have different refractive indices, can reflect the light as much as possible to form reflected light L8, thereby reducing or even preventing the light from shining into its corresponding active layer 41. Therefore, the fourth reflective film 90 can reduce or even prevent the light received by the active layer 41 of the array layer 40, thereby reducing or even preventing the output current of the active layer 41 of the transistor 44 from being affected by the light intensity after being illuminated, thus preventing the transistor 44 from having abnormal characteristics, ensuring the normal operation of the transistor 44, and thus ensuring the display stability of the display device.

[0098] It should also be noted that the fourth sub-reflective film 91, formed by the seventh dielectric layer 917 and the eighth dielectric layer 918 with different reflectivities, is also a DBR (distributed Bragg reflection) structure.

[0099] Similar to the first reflective film 60 described above, this application can optionally include only one fourth sub-reflective film 91 in the fourth reflective film 90, where the thickness of a single fourth sub-reflective film 91 needs to meet the wavelength of the light it needs to reflect. Alternatively, the fourth reflective film 90 can include multiple fourth sub-reflective films 91 stacked together. In this case, this application provides two selectable configuration methods: first, the thickness of all fourth sub-reflective films 91 is the same along the direction perpendicular to the plane of the substrate 30; second, the thickness of each fourth sub-reflective film 91 needs to individually meet the wavelength of the light it needs to reflect, meaning that fourth sub-reflective films 91 of different thicknesses can be used to reflect light of different colors. Therefore, In the multiple stacked fourth sub-reflective films 91, at least some of the fourth sub-reflective films 91 may have different thicknesses along the direction perpendicular to the plane of the substrate 30. Fourth sub-reflective films 91 of different thicknesses can reflect light of different colors. The refractive index difference between the seventh dielectric layer 917 and the eighth dielectric layer 918 included in at least some of the fourth sub-reflective films 91 may also be set to be equal to or greater than 0.4, so that the fourth sub-reflective films 91 can achieve total internal reflection of light. Along the direction perpendicular to the plane of the substrate 30, the thickness of the seventh dielectric layer 917 may be d7, and the thickness of the eighth dielectric layer 918 may be d8, where d7 = n7λ7 / 4 and d8 = n8λ7 / 4. Here, d7 is the thickness of the seventh dielectric layer 917 along the direction perpendicular to the plane of the substrate 30, and d8 is the thickness of the eighth dielectric layer 918 along the direction perpendicular to the plane of the substrate 30. Where λ7 is the wavelength of the light incident on the surface of the fourth reflective film 90, n7≥1, n8≥1, and n7 and n8 are both positive integers. It should be noted that since the fourth reflective film 90 is disposed on the side of the active layer 41 away from the substrate 30, the thickness of the fourth sub-reflective film 91 in the fourth reflective film 90 can be set according to the emitted light color of its corresponding light-emitting functional layer 51. Specifically, the light-emitting element 51 may include a red light-emitting element, a green light-emitting element, and a blue light-emitting element, with the wavelength of red light being λ. 11 The wavelength of green light is λ. 12 The wavelength of blue light is λ. 13 At that time, the thickness of the fourth reflective film 91, which can be set corresponding to the red light-emitting element, can be d7+d8=(n7λ) / 2. 11 +n8λ 11 ) / 4, where d7=n7λ 11 / 4, d8=n8λ 11 / 4; Similarly, the thickness of the fourth reflective film 91, which can be set corresponding to the green light-emitting element, can be d7+d8=(n7λ) 12 +n8λ 12 ) / 4, where d7=n7λ 12 / 4, d8=n8λ 12 / 4; Similarly, the thickness of the fourth reflective film 91 corresponding to the blue light-emitting element can be set to d7+d8=(n7λ) 13 +n8λ 13 ) / 4, where d7=n7λ 13 / 4, d8=n8λ 13 / 4; In addition, it is understood that the light-emitting element 51 may include light-emitting elements of other colors, and this application does not limit this.

[0100] Furthermore, this application does not limit the area size of the fourth reflective film 90. It can be configured such that, along the direction perpendicular to the plane of the substrate 30, the fourth reflective film 90 only covers the corresponding portion of the active layer 41. For example, the fourth reflective film 90 can only cover the channel region 411 of the corresponding transistor 44, or the fourth reflective film 90 can completely cover the corresponding active layer 41, as long as the configuration of the fourth reflective film 90 can reduce or even eliminate the light emitted from the side away from the substrate 30 that shines on the active layer 41 towards the substrate 30.

[0101] It should also be added that, Figure 9 The fourth reflective film 90 shown is in contact with the gate electrode 42 and the active layer 41 respectively. This is only one optional setting provided by this application. Users can also choose to set the fourth reflective film 90 to only contact the gate electrode 42 or the active layer 41, or set the fourth reflective film 90 to be located between the gate electrode 42 and the active layer 41 and not in contact with either the gate electrode 42 or the active layer 41.

[0102] It should also be noted that, similar to the first reflective film 60, the fourth reflective film 90 can also be made of insulating materials. Therefore, depending on the requirements, the fourth reflective film 90 can be configured to have a contact area with the active layer 41, or it can be configured to have no contact area at all. This application does not impose specific limitations on this. Furthermore, if the material used to make the fourth reflective film 90 includes conductive materials, it is necessary to provide an insulating material between the conductive material and the active layer 41 to avoid the fourth reflective film 90 affecting the normal operation of the transistor 44 and to ensure the normal operation of the display panel 100.

[0103] Please refer to Figure 1 , Figure 2 , Figures 6-11 It should also be added that, although this application is attached Figure 11The first area 10 shown in the figure is only provided with the fourth reflective film 90, but this application is not limited to this. However, this application does not limit whether a display panel 100 includes the first reflective film 60, the second reflective film 70, the third reflective film 80, and the fourth reflective film 90 at the same time. Users can choose to include any one, any two, any three, or all of the first reflective film 60, the second reflective film 70, the third reflective film 80, and the fourth reflective film 90 in the display panel 100 according to their needs.

[0104] Please continue to refer to Figures 1-11 Optionally, the active layer 41 includes a channel region 411, and the fourth reflective film 90 covers at least a portion of the channel region 411 along a direction perpendicular to the plane of the substrate 30.

[0105] Specifically, the active layer 41 in the array layer 40 provided in this application includes a channel region 411. This application provides an optional arrangement in which the fourth reflective film 90 covers part of the channel region 411 along a direction perpendicular to the plane where the substrate 30 is located, or the fourth reflective film 90 covers all of the channel region 411. Since stray light irradiates the channel region of the transistor 44, it can cause abnormal leakage current during the operation of the transistor 44, affecting the normal operating performance of the transistor 44. By setting the fourth reflective film 90 to cover at least part of the channel region 411, it is possible to reduce or even eliminate the light emitted from the side of the light-emitting element 51 irradiating the channel region 411 of the active layer 41 towards the side of the substrate 30, thereby reducing or even avoiding the influence of light intensity on the output current of the active layer 41 of the transistor 44 after being irradiated, thus avoiding the abnormal characteristic problem of the transistor 44, ensuring the normal operating effect of the transistor 44, and thus ensuring the display stability of the display device.

[0106] Please continue to refer to Figure 1 and Figure 11 Optionally, the array layer 40 further includes a gate electrode 42, which is located on the side of the active layer 41 away from the substrate 30, and a gate insulating layer is included between the gate electrode 42 and the active layer 41.

[0107] The fourth reflective film 90 is reused as a gate insulating layer.

[0108] Specifically, this application also provides an optional configuration method where, when the array layer 40 also needs to include a gate electrode 42, and the gate electrode 42 is located on the side of the active layer 41 away from the substrate 30, a gate insulating layer needs to be provided between the gate electrode 42 and the active layer 41. The gate insulating layer can be made of some selectable oxides or nitrides, ensuring good insulation performance. In this case, this application can choose to directly reuse the aforementioned fourth reflective film 90 as the gate insulating layer, that is, use insulating material to make the fourth reflective film 90. The fourth reflective film 90 is located between the gate electrode 42 and the active layer 41, replacing the gate insulating layer that needs to be provided between the gate electrode 42 and the active layer 41. This achieves the purpose of setting the fourth reflective film 90 to reduce the amount of light emitted from the side of the active layer 41 away from the substrate 30, while also avoiding an increase in the number of film layers in the array layer 40 due to the fourth reflective film 90, ensuring a relatively low thickness of the array layer 40, thereby meeting the thinning requirement of the display panel 100.

[0109] Please continue to refer to [the relevant documentation / reference] as needed. Figures 1-11 Although the first dielectric layer 611, the third dielectric layer 713, the fifth dielectric layer 815, and the seventh dielectric layer 917 in the accompanying drawings of this application use the same filling pattern, this is not intended to limit the four dielectric layers to having the same material or the same thickness. In other words, the use of the same filling pattern for the four dielectric layers does not mean that their physical properties are the same. Users can adjust the material, thickness, and other physical properties of the four dielectric layers according to their needs, and this application does not make specific limitations in this regard. That is, the thickness of the four dielectric layers can be the same, different, or partially the same, and the material of the four dielectric layers can be the same, different, or partially the same. Similarly, users can adjust the physical properties of the four dielectric layers, namely the second dielectric layer 612, the fourth dielectric layer 714, the sixth dielectric layer 816, and the eighth dielectric layer 918, according to their needs. This application does not impose specific limitations on this; that is, the thickness of these four dielectric layers can be set to be the same, different, or partially the same, and the materials used to manufacture these four dielectric layers can be set to be the same, different, or partially the same.

[0110] Please continue to refer to Figures 1-2 Optionally, the transmittance of the first reflective film 60 is p, where p ≥ 80%.

[0111] Specifically, this application also provides an optional setting whereby, when the first reflective film 60 needs to transmit light of at least some colors, the transmittance of the first reflective film 60 for transmitting specific light can be set to be equal to or greater than 80%. This setting can ensure that the first reflective film 60 has a good light transmission effect for specific light, so as to achieve the required light transmission effect.

[0112] Figure 12 The diagram shown is a schematic representation of a display device provided in an embodiment of this application. Please refer to... Figure 12 Based on the same inventive concept, this application also provides a display device 200, which includes a display panel 100, and the display panel 100 is any of the display panels 100 provided in this application.

[0113] It should be noted that the embodiments of the display device 200 provided in this application can refer to the embodiments of the display panel 100 described above, and will not be repeated here. The display device 200 provided in this application can be any product and component with touch function, such as a mobile phone, tablet computer, television, touch screen, laptop computer, or navigator.

[0114] As can be seen from the above embodiments, the display panel and display device provided by the present invention achieve at least the following beneficial effects:

[0115] This application provides a display panel and a display device. A light-emitting element is disposed in a first region of the display panel, and a first recess is disposed in a second region of the display panel. A first dielectric layer and a second dielectric layer with different refractive indices are disposed on the sidewall of the first recess, with the first dielectric layer positioned between the sidewall of the first recess and the second dielectric layer. The first dielectric layer has a higher refractive index. This allows the first and second dielectric layers with different refractive indices to reflect light emitted by adjacent light-emitting elements, reducing the impact of light emitted by adjacent light-emitting elements on the active layer, thereby avoiding abnormal transistor characteristics and improving the display effect of the display device.

[0116] While specific embodiments of the invention have been described in detail by way of examples, those skilled in the art should understand that the examples are for illustrative purposes only and not intended to limit the scope of the invention. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims

1. A display panel, characterized in that, The display panel includes a first area and a second area, and the display panel further includes: Substrate; An array layer is located on one side of the substrate; A light-emitting layer, located on the side of the array layer away from the substrate, includes a plurality of light-emitting elements, wherein the light-emitting elements are located in the first region; A first groove, located in the second region, is formed by the surface of the array layer on the side away from the substrate being recessed toward the substrate side; A first reflective film includes at least one first sub-reflective film; the first sub-reflective film is at least partially located on the sidewall of the first groove; the first sub-reflective film includes a first dielectric layer and a second dielectric layer, the first dielectric layer is located between the sidewall of the first groove and the second dielectric layer, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer; The first reflective film includes a plurality of first sub-reflective films stacked together.

2. The display panel according to claim 1, characterized in that, Among the multiple stacked first sub-reflective films, at least some of the first sub-reflective films have different thicknesses along the direction perpendicular to the sidewall of the first groove.

3. The display panel according to claim 1, characterized in that, The refractive index of the first dielectric layer is α1, and the refractive index of the second dielectric layer is α2, where α1-α2≥0.

4.

4. The display panel according to claim 1, characterized in that, Along the direction perpendicular to the sidewall of the first groove, the thickness of the first dielectric layer is d1, and the thickness of the second dielectric layer is d2, where d1 = n1λ1 / 4 and d2 = n2λ1 / 4. Where λ1 is the wavelength of the light incident on the surface of the first reflective film, n1≥1, n2≥1, and n1 and n2 are both positive integers.

5. The display panel according to claim 1, characterized in that, The first reflective film covers the sidewall of the first groove along a direction perpendicular to the sidewall of the first groove.

6. The display panel according to claim 1, characterized in that, Along a direction perpendicular to the plane of the substrate, the height of the first groove is at least equal to the distance between the substrate and the side surface of the array layer away from the substrate.

7. The display panel according to claim 1, characterized in that, It also includes a second reflective film, which is located on the side of the array layer facing the light-emitting element. The second reflective film includes at least one second sub-reflective film. The second sub-reflective film includes a third dielectric layer and a fourth dielectric layer along the array layer pointing towards the light-emitting element. The third dielectric layer is located between a portion of the structure of the light-emitting element and the fourth dielectric layer. The refractive index of the third dielectric layer is greater than that of the fourth dielectric layer.

8. The display panel according to claim 1, characterized in that, The array layer includes an active layer; It also includes a third reflective film located on the side of the active layer facing the substrate. The third reflective film includes at least one third sub-reflective film. The third sub-reflective film includes a fifth dielectric layer and a sixth dielectric layer along the substrate pointing towards the light-emitting layer. The fifth dielectric layer is located between the substrate and the sixth dielectric layer, and the refractive index of the fifth dielectric layer is greater than that of the sixth dielectric layer.

9. The display panel according to claim 8, characterized in that, The active layer includes a channel region, and the third reflective film covers at least a portion of the channel region along a direction perpendicular to the plane of the substrate.

10. The display panel according to claim 1, characterized in that, The array layer includes an active layer; It also includes a fourth reflective film located on the side of the active layer away from the substrate. The fourth reflective film includes at least one fourth sub-reflective film. The fourth sub-reflective film includes a seventh dielectric layer and an eighth dielectric layer along the light-emitting layer pointing towards the substrate. The seventh dielectric layer is located between the eighth dielectric layer and the light-emitting layer. The refractive index of the seventh dielectric layer is greater than that of the eighth dielectric layer.

11. The display panel according to claim 10, characterized in that, The active layer includes a channel region, and the fourth reflective film covers at least a portion of the channel region along a direction perpendicular to the plane of the substrate.

12. The display panel according to claim 10, characterized in that, The array layer further includes a gate electrode located on the side of the active layer away from the substrate, and a gate insulating layer is included between the gate electrode and the active layer; The fourth reflective film is reused as the gate insulating layer.

13. The display panel according to claim 1, characterized in that, The transmittance of the first reflective film is p, where p ≥ 80%.

14. A display device, characterized in that, Includes the display panel as described in any one of claims 1-13.

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