一种异质结、其制备方法及应用
The method of preparing MoS2/WS2-h-BN heterojunction by combining chemical vapor deposition and dry transfer method solves the problems of small sample area and poor reproducibility in the prior art, and realizes the application of heterojunction with high stability and excellent thermoelectric performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUBEI JIUFENGSHAN LAB
- Filing Date
- 2022-11-16
- Publication Date
- 2026-07-17
AI Technical Summary
The lack of effective methods in the existing technology to obtain MoS2/WS2-h-BN heterojunctions results in small sample area, high method instability and poor reproducibility, making it difficult to apply to the field of thermoelectric materials.
A combination of chemical vapor deposition and dry transfer methods was used to grow a MoS2/WS2 mixed layer in two steps and then transfer it to the surface of an h-BN substrate to form a heterojunction. The specific steps included depositing a thin film on the initial substrate, chemical vapor deposition treatment, and the application of dry transfer technology.
The obtained MoS2/WS2-h-BN heterojunction exhibits good stability, strong repeatability, and excellent thermoelectric performance, making it suitable for applications such as thermoelectric power generation, thermoelectric temperature control and refrigeration, temperature sensing, and MEMS thermopile sensing.
Smart Images
Figure CN115768230B_ABST