Light sensor

Abstract

This invention discloses a light sensor comprising a substrate, a gate line, a data line, a thin-film transistor, a light-sensing structure, a common electrode line, and a first light-shielding layer. The gate line is located on the substrate. The data line is located on the substrate. The gate of the thin-film transistor is electrically connected to the gate line. The drain of the thin-film transistor is electrically connected to the data line. The lower electrode of the light-sensing structure is electrically connected to the source of the thin-film transistor. The common electrode line is located on the substrate. The common electrode line is electrically connected to the upper electrode of the light-sensing structure. The first light-shielding layer is located on the substrate. The upper surface of the first light-shielding layer is lower than the upper surface of the light-sensing structure. Viewed from above, the first light-shielding layer is at least partially located between the data line and the light-sensing structure.

Description

Technical Field

[0001] This invention relates to an optical sensor. Background Technology

[0002] Optical sensors are widely used in electronic devices such as smartphones, laptops, and tablets. In addition, they are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays can convert X-rays passing through human tissue into visual images. Developing an optical sensor that can improve image quality is one of the problems that the industry urgently needs to address through research and development. Summary of the Invention

[0003] In view of this, one object of the present invention is to provide an optical sensor that can effectively solve the above-mentioned problems.

[0004] This invention relates to a light sensor comprising a substrate, a gate line, a data line, a thin-film transistor (TFT), a light-sensing structure, a common electrode line, and a first light-shielding layer. The gate line is located on the substrate. The data line is located on the substrate. The gate of the TFT is electrically connected to the gate line. The drain of the TFT is electrically connected to the data line. The lower electrode of the light-sensing structure is electrically connected to the source of the TFT. The common electrode line is located on the substrate. The common electrode line is electrically connected to the upper electrode of the light-sensing structure. The first light-shielding layer is located on the substrate. The upper surface of the first light-shielding layer is lower than the upper surface of the light-sensing structure. Viewed from top, the first light-shielding layer is at least partially located between the data line and the light-sensing structure.

[0005] In some current implementations, the first light-shielding layer has the same semiconductor material as the channel region of the thin-film transistor.

[0006] In some current embodiments, the photosensor further includes an extension electrode. The extension electrode extends from the drain of the thin-film transistor to a data line. A portion of the data line extends downwards to contact the extension electrode. The extension electrode at least partially covers the first light-shielding layer. The lower electrode of the photosensing structure at least partially covers the first light-shielding layer.

[0007] In some current embodiments, the lower electrode of the photosensitive structure is at least partially covered by the first light-shielding layer.

[0008] In some current implementations, the lower electrode of the photosensitive structure is separated from the first light-shielding layer.

[0009] In some current embodiments, the lower electrode of the photosensitive structure is at least partially covered by the first light-shielding layer.

[0010] In some current embodiments, the lower electrode of the photosensitive structure at least partially covers the first light-shielding layer, and the photosensor further includes an extension electrode and a second light-shielding layer. The extension electrode extends from the drain of the thin-film transistor to a data line. A portion of the data line extends downward to contact the extension electrode. The extension electrode at least partially covers the second light-shielding layer. The first light-shielding layer and the second light-shielding layer are separate.

[0011] In some current implementations, the first light-shielding layer, the second light-shielding layer, and the channel region of the thin-film transistor have the same semiconductor material.

[0012] In some current embodiments, the photosensor further includes an extended electrode. The extended electrode extends from the drain of the thin-film transistor to a data line. A portion of the data line extends downwards to contact the extended electrode. The extended electrode is separate from the first light-shielding layer. The lower electrode of the photosensing structure is also separate from the first light-shielding layer.

[0013] In some current embodiments, the optical sensor further includes a reflective layer located under the substrate.

[0014] In summary, in some embodiments of the optical sensor of the present invention, the fabrication process and the structure of the optical sensor are further simplified by using the same material to form the first light-shielding layer, the second light-shielding layer, and the channel region of the thin-film transistor in a single fabrication process. Appropriately distributing the first and second light-shielding layers to cover different areas of the optical sensor reduces the amount of light reflected back into the optical sensor from the substrate, thus minimizing the impact on the sensing results. Appropriately separating the first and second light-shielding layers, the thin-film transistor, and the optical sensing structure prevents the formation of leakage paths within the optical sensor. The inclusion of a reflective layer, the first light-shielding layer, and the second light-shielding layer on the optical sensor ensures that the sensing results are not affected by reflected light. Attached Figure Description

[0015] The best understanding of the invention can be obtained by reading it in conjunction with the accompanying drawings, as described in the following detailed description. It should be noted that, according to industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation.

[0016] Figure 1A This is a schematic diagram of an optical sensor according to some embodiments of the present invention;

[0017] Figure 1B for Figure 1A A cross-sectional side view of the center line segment B-B';

[0018] Figure 1C for Figure 1A A cross-sectional side view of the center line segment C-C';

[0019] Figure 2A This is a schematic diagram of an optical sensor according to other embodiments of the present invention;

[0020] Figure 2B for Figure 2A A cross-sectional side view of the center line segment B-B';

[0021] Figure 2C for Figure 2A A cross-sectional side view of the center line segment C-C';

[0022] Figure 3A This is a schematic diagram of an optical sensor according to other embodiments of the present invention;

[0023] Figure 3B for Figure 3A A cross-sectional side view of the center line segment B-B';

[0024] Figure 3C for Figure 3A A cross-sectional side view of the center line segment C-C';

[0025] Figure 4A This is a schematic diagram of an optical sensor according to other embodiments of the present invention;

[0026] Figure 4B for Figure 4A A cross-sectional side view of the center line segment B-B';

[0027] Figure 4C for Figure 4A A cross-sectional side view of the center line segment C-C';

[0028] Figure 5A This is a schematic diagram of an optical sensor according to other embodiments of the present invention;

[0029] Figure 5B for Figure 5A A cross-sectional side view of the center line segment B-B';

[0030] Figure 5C for Figure 5A A cross-sectional side view of the center line segment C-C';

[0031] Figure 6 This is a schematic diagram of an optical sensor according to other embodiments of the present invention.

[0032] Symbol Explanation

[0033] 100: Light sensor

[0034] 110:Substrate

[0035] 120: Gate line

[0036] 130: Data cable

[0037] 140: Thin-film transistor

[0038] 142: Gate

[0039] 144: Source

[0040] 146: Ditch area

[0041] 148: Drain

[0042] 150: Photosensitive structure

[0043] 150a: Top surface

[0044] 152: Lower electrode

[0045] 154: Photosensitive layer

[0046] 156: Upper electrode

[0047] 160: Common electrode wire

[0048] 170, 172: Light-shielding layer

[0049] 170a, 172a: Upper surface

[0050] 180: Extended electrode

[0051] 192, 194, 196: Insulation layer

[0052] 192H: Through hole

[0053] 200: Reflective layer

[0054] B-B', C-C': line segment Detailed Implementation

[0055] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify some implementations of the invention. These are, of course, merely examples and are not intended to be limiting. For instance, in the following description, the formation of a first feature on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features such that the first and second features are not in direct contact. Additionally, element symbols and / or letters may be repeated in various instances of the invention. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0056] It should be understood that when a component, such as a layer, film, region, or substrate, is referred to as being "on" or "connected" to another component, it may be directly on or connected to the other component, or an intermediate component may also be present. Conversely, when a component is referred to as being "directly on" or "directly connected" to another component, no intermediate component is present. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" can refer to the presence of other components between two components.

[0057] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” or “substantially” herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not require a single standard deviation to apply to all properties.

[0058] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0059] Figure 1A This is a schematic diagram of an optical sensor 100 according to some embodiments of the present invention. Figure 1B According to Figure 1A A cross-sectional side view of the midline segment B-B'. Figure 1C According to Figure 1A A cross-sectional side view of the centerline segment C-C'. Please refer to... Figure 1A , Figure 1B as well as Figure 1CA light sensor 100 includes a substrate 110, a gate line 120, a data line 130, a thin-film transistor 140, a light-sensing structure 150, a common electrode line 160, and a first light-shielding layer 170. The gate line 120 is located on the substrate 110. The data line 130 is located on the substrate 110. The gate 142 of the thin-film transistor 140 is electrically connected to the gate line 120. The drain 148 of the thin-film transistor 140 is electrically connected to the data line 130. The lower electrode 152 of the light-sensing structure 150 is electrically connected to the source 144 of the thin-film transistor 140. The common electrode line 160 is located on the substrate 110. The common electrode line 160 is electrically connected to the upper electrode 156 of the light-sensing structure 150. The first light-shielding layer 170 is located on the substrate 110. The upper surface 170a of the first light-shielding layer 170 is lower than the upper surface 150a of the light-sensing structure 150. Viewed from above, the first light-shielding layer 170 is at least partially located between the data line 130 and the photosensitive structure 150. Specifically, the data line 130, the thin-film transistor 140, the photosensitive structure 150, and the common electrode line 160 can be connected through an insulating layer (e.g., Figure 1B or Figure 1C The insulating layers 192 and 194 are separated, and an insulating layer may also cover the data line 130, the thin-film transistor 140, the photosensitive structure 150, and the common electrode line 160 (e.g., Figure 1B or Figure 1C The insulating layer 196 in the middle or other structures are formed.

[0060] Please refer to Figure 1A , Figure 1B as well as Figure 1C A gate line 120 and a data line 130 are disposed on the substrate 110. Figure 1A In the illustrated embodiment, the gate line 120 extends vertically, and the data line 130 extends laterally and overlaps with a portion of the gate line 120. Figure 1B In some embodiments, the data line 130 has a through-hole that passes through insulating layers 192 and 194 and extends downward. In some embodiments, the light sensor 100 further includes an extension electrode 180. Please refer to... Figure 1A The extension electrode 180 extends from the drain 148 of the thin-film transistor 140 to below the data line 130. Please refer to... Figure 1B The data line 130 has a through-hole that extends downward and contacts the extension electrode 180. The extension electrode 180 at least partially covers the first light-shielding layer 170. On the other hand, the lower electrode 152 of the photosensitive structure 150 also at least partially covers the first light-shielding layer 170.

[0061] Please refer to Figure 1A , Figure 1B as well as Figure 1CA thin-film transistor 140 and a photosensing structure 150 are also disposed on the substrate 110. The thin-film transistor 140 is disposed adjacent to the gate line 120 and its gate 142 extends laterally to be electrically connected to the gate line 120 (see reference). Figure 1A The source 144 and drain 148 of the thin-film transistor 140 extend vertically and are respectively connected to the photosensitive structure 150 and the data line 130. Meanwhile, a common electrode line 160 disposed on the substrate 110 is parallel to the data line 130 and extends laterally across the gate line 120 and the photosensitive structure 150. Please refer to... Figure 1B as well as Figure 1C The photosensitive structure 150 has an upper electrode 156 and a photosensitive layer 154 located between the lower electrode 152 and the upper electrode 156. Specifically, the lower electrode 152 of the photosensitive structure 150 is disposed above the substrate 110. An insulating layer 192 is disposed above the lower electrode 152 of the photosensitive structure 150, wherein the insulating layer 192 has a through hole 192H, the through hole 192H exposing a portion of the surface of the lower electrode 152. The photosensitive layer 154 fills the through hole 192H and directly contacts the portion of the surface of the lower electrode 152 exposed by the through hole 192H to form an electrical connection. The upper electrode 156 of the photosensitive structure 150 directly contacts and is disposed on the photosensitive layer 154. A common electrode line 160 is provided with a through hole extending downward and is electrically connected to the upper electrode 156 of the photosensitive structure 150.

[0062] Please refer to Figure 1A , Figure 1B as well as Figure 1C In some embodiments, the first light-shielding layer 170, which is partially covered by the extended electrode 180, further extends and is located in the region below the via of the data line 130, the region between the data line 130 and the photosensitive structure 150, and the region below the photosensitive structure 150. Furthermore, in some embodiments, the lower electrode 152 of the photosensitive structure 150 at least partially covers the first light-shielding layer 170. (Refer to...) Figure 1B as well as Figure 1C As can be seen, the photosensitive structure 150 is completely positioned above the first light-shielding layer 170, and the upper surface 150a of the photosensitive structure 150 is higher than the upper surface 170a of the first light-shielding layer 170. (Refer to...) Figure 1A When viewed from above, it can be seen that the area of ​​the first light-shielding layer 170 is larger than the area of ​​the lower electrode 152 of the photosensitive structure 150.

[0063] Simultaneously, the first light-shielding layer 170 partially overlaps with both the gate line 120 and the data line 130, but does not extend beyond the other edge of either the gate line 120 or the data line 130. In other words, the coverage area of ​​the first light-shielding layer 170 will not extend to another adjacent pixel unit. Since the data line 130 and the gate line 120 are made of opaque materials (e.g., metal), by overlapping the first light-shielding layer 170 with portions of the data line 130 and the gate line 120, it is ensured that there are no uncovered light-transmitting areas between the first light-shielding layer 170 and the data line 130 and the gate line 120. The first light-shielding layer 170 can reduce the light reflected by the substrate 110 to a certain extent (e.g., reduce the light reflectivity by about 40%). In this way, covering the first light-shielding layer 170 can reduce the light reflectivity of the light sensor 100 in areas such as the data line 130, the thin-film transistor 140, and the photosensitive structure 150, thereby reducing the impact of reflected light on the judgment result of the photosensitive structure 150.

[0064] Please refer to Figure 1A as well as Figure 1C The channel region 146 of the thin-film transistor 140 is located between the source 144 and the drain 148. A gate 142 is disposed below the channel region 146, and the gate 142 is controlled by controlling a signal applied to the gate line 120 to further turn the channel region 146 of the thin-film transistor 140 on or off. In some embodiments, the first light-shielding layer 170 and the channel region 146 of the thin-film transistor 140 have the same semiconductor material. Because the first light-shielding layer 170 and the channel region 146 are made of the same semiconductor material, they can be formed in the same fabrication process. In some embodiments, the material used to form the first light-shielding layer 170 and the channel region 146 can be or includes amorphous silicon. However, in other embodiments, other suitable materials can also be used. Using the same material to form the first light-shielding layer 170 and the channel region 146 simplifies the manufacturing steps of the photosensor 100 and simultaneously reduces the reflectivity of the photosensor 100.

[0065] In embodiments where the first light-shielding layer 170 of the light sensor 100 is made of a semiconductor material, because leakage current may occur in the area where the first light-shielding layer 170 is laid, the coverage area of ​​the first light-shielding layer 170 will not extend to another adjacent pixel unit. This avoids leakage current between pixel units through the first light-shielding layer 170.

[0066] Figure 2A This is a schematic diagram of an optical sensor 100 according to other embodiments of the present invention. Figure 2B According to Figure 2A A cross-sectional side view of the midline segment B-B'. Figure 2C According to Figure 2A A cross-sectional side view of the centerline segment C-C'. Please refer to... Figure 2A , Figure 2B as well as Figure 2C Compared to the aforementioned targets Figure 1A , Figure 1B as well as Figure 1C In this embodiment, the first light-shielding layer 170 is located in the region between the data line 130 and the photosensitive structure 150, and in the region below the photosensitive structure 150, but does not directly contact the extended electrode 180 (or, in other words, the first light-shielding layer 170 is separate from the extended electrode 180). Since the first light-shielding layer 170 does not directly contact the extended electrode 180, leakage current between the extended electrode 180 and the lower electrode 152 of the photosensitive structure 150 via the first light-shielding layer 170 can be avoided. As for other components and details, they are consistent with... Figure 1A , Figure 1B as well as Figure 1C The embodiments are described again.

[0067] Figure 3A This is a schematic diagram of an optical sensor 100 according to other embodiments of the present invention. Figure 3B According to Figure 3A A cross-sectional side view of the midline segment B-B'. Figure 3C According to Figure 3A A cross-sectional side view of the centerline segment C-C'. Please refer to... Figure 3A , Figure 3B as well as Figure 3C Compared to the aforementioned targets Figure 1A , Figure 1B as well as Figure 1C In this embodiment, the first light-shielding layer 170 is located in the region below the through-hole of the data line 130 and in the region between the data line 130 and the photosensitive structure 150, but it does not directly contact the lower electrode 152 of the photosensitive structure 150 (or, in other words, the first light-shielding layer 170 is separate from the lower electrode 152 of the photosensitive structure 150). Since the first light-shielding layer 170 does not directly contact the lower electrode 152 of the photosensitive structure 150, leakage current between the extension electrode 180 and the lower electrode 152 of the photosensitive structure 150 via the first light-shielding layer 170 can be avoided. As for other components and details, they are all related to... Figure 1A , Figure 1B as well as Figure 1C The embodiments are described again.

[0068] Figure 4A This is a schematic diagram of an optical sensor 100 according to other embodiments of the present invention. Figure 4B According to Figure 4A A cross-sectional side view of the midline segment B-B'. Figure 4C According to Figure 4A A cross-sectional side view of the centerline segment C-C'. Please refer to... Figure 4A , Figure 4Bas well as Figure 4C Compared to the aforementioned targets Figure 1A , Figure 1B as well as Figure 1C In this embodiment, the first light-shielding layer 170 only covers the area between the data line 130 and the photosensitive structure 150. The first light-shielding layer 170 is not in direct contact with the extended electrode 180 (or, in other words, the first light-shielding layer 170 is separate from the extended electrode 180), nor is it in direct contact with the lower electrode 152 of the photosensitive structure 150 (or, in other words, the first light-shielding layer 170 is separate from the lower electrode 152 of the photosensitive structure 150). Because the first light-shielding layer 170 is not in direct contact with the extended electrode 180 and the lower electrode 152 of the photosensitive structure 150, leakage current between the extended electrode 180 and the lower electrode 152 of the photosensitive structure 150 via the first light-shielding layer 170 can be avoided. Other components and details are as described above. Figure 1A , Figure 1B as well as Figure 1C The embodiments are described again.

[0069] Figure 5A This is a schematic diagram of an optical sensor 100 according to other embodiments of the present invention. Figure 5B According to Figure 5A A cross-sectional side view of the midline segment B-B'. Figure 5C According to Figure 5A A cross-sectional side view of the centerline segment C-C'. Please refer to... Figure 5A , Figure 5B as well as Figure 5C In addition to the embodiments for setting the first light-shielding layer 170 discussed above, multiple non-connected light-shielding layers can also be set to avoid leakage current. In some embodiments, the first light-shielding layer 170 and the second light-shielding layer 172 are set in the photosensor 100. In some embodiments, the lower electrode 152 of the photosensing structure 150 at least partially covers the first light-shielding layer 170, and the extension electrode 180 at least partially covers the second light-shielding layer 172. The first light-shielding layer 170 and the second light-shielding layer 172 are separate. In other words, the first light-shielding layer 170 and the second light-shielding layer 172 respectively set in the photosensor 100 are not connected to each other. The first light-shielding layer 170 partially overlaps with the lower electrode 152 of the photosensing structure 150, and is used to shield the area between the data line 130 and the photosensing structure 150 and the area below the photosensing structure 150. The second light-shielding layer 172 partially overlaps with the extended electrode 180 and is used to shield the area below the via of the data line 130 and part of the area between the data line 130 and the photosensitive structure 150. Meanwhile, the first light-shielding layer 170 and the second light-shielding layer 172 overlap with the gate line 120 and the data line 130 respectively, but do not extend beyond the other edge of the gate line 120 or the data line 130. On the other hand, in Figure 5B as well as Figure 5C In the cross-sectional view, the upper surface 170a of the first light-shielding layer 170 and the upper surface 172a of the second light-shielding layer 172 are both lower than the upper surface 150a of the photosensitive structure 150.

[0070] In some embodiments, the first light-shielding layer 170, the second light-shielding layer 172, and the channel region 146 of the thin-film transistor 140 have the same semiconductor material. Specifically, please refer to... Figure 5C Since the first light-shielding layer 170, the second light-shielding layer 172, and the channel region 146 of the thin-film transistor 140 (located between the source 144 and the drain 148) are made of the same semiconductor material, they can be formed in the same fabrication process. In some embodiments, the material used to form the first light-shielding layer 170, the second light-shielding layer 172, and the channel region 146 may be or comprise amorphous silicon. However, in other embodiments, other suitable materials may also be used. Using the same material to form the first light-shielding layer 170, the second light-shielding layer 172, and the channel region 146 simplifies the manufacturing steps of the photosensor 100 and simultaneously reduces the reflectivity of the photosensor 100. In embodiments where the first light-shielding layer 170 and the second light-shielding layer 172 are semiconductor materials, leakage current may occur in the areas where the first light-shielding layer 170 and the second light-shielding layer 172 are laid. Therefore, the first light-shielding layer 170 and the second light-shielding layer 172 can be separated from each other to avoid leakage current problems. As for other components and details, they are consistent with those of the previous embodiment. Figure 1A , Figure 1B as well as Figure 1C The embodiments are described again.

[0071] Figure 6 This is a schematic diagram of a light sensor 100 according to other embodiments of the present invention. Please refer to... Figure 6 Compared to the aforementioned targets Figure 1A , Figure 1B as well as Figure 1C Implementation examples, Figure 6 The light sensor 100 further includes a reflective layer 200 located below the substrate 110. Specifically, the light sensor 100 can be used in conjunction with the reflective layer 200. In some embodiments, the reflective layer 200 is disposed below the substrate 110 and can be fixed to the substrate 110 by adhesive. When the light sensor 100 is provided with both a light-shielding layer (e.g., a first light-shielding layer 170) and a reflective layer 200, the reflected light of the light sensor 100 can be further reduced to ensure that the sensing result of the light sensor 100 is not affected by the reflected light. As for other components and details, they are consistent with those of the substrate 110. Figure 1A , Figure 1B as well as Figure 1C The embodiments described herein will not be repeated. Furthermore, the light sensor 100 in the other embodiments can also be used with the reflective layer 200 in a similar configuration.

[0072] From the detailed description of specific embodiments of the present invention above, it is evident that in some embodiments of the optical sensor of the present invention, by using the same material to form the first light-shielding layer and the channel region of the thin-film transistor in a single fabrication process, the fabrication process and the structure of the optical sensor are further simplified. Appropriately covering different areas of the optical sensor with the first light-shielding layer reduces the amount of light reflected from the substrate back into the optical sensor, thus minimizing the impact on the sensing results. By appropriately separating the first light-shielding layer, the thin-film transistor, and the optical sensing structure, the formation of a leakage current path within the optical sensor by the first light-shielding layer is prevented. The presence of a reflective layer and the first light-shielding layer on the optical sensor ensures that the sensing results are not affected by reflected light.

[0073] The foregoing summary outlines the features of several embodiments, enabling those skilled in the art to better understand the nature of the invention. Those skilled in the art will understand that they can readily use this invention as the basis for designing or modifying other manufacturing processes and structures to achieve the same purpose and / or attain the same advantages of the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the invention, and that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of the invention.

Claims

1. An optical sensor, comprising: substrate; Gate lines are located on the substrate; The data cable is located on the substrate; A thin-film transistor, wherein the gate of the thin-film transistor is electrically connected to the gate line, and the drain of the thin-film transistor is electrically connected to the data line; A photosensitive structure, wherein the lower electrode of the photosensitive structure is electrically connected to the source of the thin-film transistor; A common electrode line is located on the substrate and is electrically connected to the upper electrode of the photosensitive structure; as well as A first light-shielding layer is located on the substrate. The upper surface of the first light-shielding layer is lower than the upper surface of the photosensitive structure. From a top view, the first light-shielding layer is at least partially located between the data line and the photosensitive structure. The first light-shielding layer partially overlaps with both the gate line and the data line. The coverage area of ​​the first light-shielding layer does not extend beyond the range of the corresponding pixel unit defined by the gate line and the data line. Wherein, at least one insulating layer is disposed between the first light-shielding layer and the thin-film transistor, and In this embodiment, the lower electrode of the photosensitive structure at least partially covers the first light-shielding layer, and the first light-shielding layer does not directly contact the lower electrode of the photosensitive structure.

2. The optical sensor of claim 1, wherein the first light-shielding layer has the same semiconductor material as the channel region of the thin-film transistor.

3. The optical sensor as claimed in claim 1, further comprising: An extension electrode extends from the drain of the thin-film transistor to the data line, a portion of the data line extending downward to contact the extension electrode, wherein the extension electrode at least partially covers the first light-shielding layer.

4. The optical sensor of claim 1, wherein the lower electrode of the optical sensing structure is separate from the first light-shielding layer.

5. The optical sensor of claim 1, further comprising: An extension electrode extends from the drain of the thin-film transistor to the data line, and a portion of the data line extends downward to contact the extension electrode; and The second light-shielding layer, wherein the extended electrode at least partially covers the second light-shielding layer, and the first light-shielding layer is separate from the second light-shielding layer.

6. The optical sensor of claim 5, wherein the first light-shielding layer, the second light-shielding layer, and the channel region of the thin-film transistor have the same semiconductor material.

7. The optical sensor of claim 1, further comprising: An extension electrode extends from the drain of the thin-film transistor to the data line, a portion of the data line extends downward to contact the extension electrode, wherein the extension electrode is separated from the first light-shielding layer, and the lower electrode of the photosensitive structure is also separated from the first light-shielding layer.

8. The optical sensor of claim 1, further comprising: The reflective layer is located beneath the substrate.

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