Weakened structure, semiconductor structure and method of manufacturing the same, chip transfer method

Abstract

The present application relates to a kind of weakening structure and its preparation method, chip transfer method.The preparation method of weakening structure includes: providing substrate;Form pattern structure array on the surface of substrate, pattern structure array includes multiple pattern structures arranged in array, and there is gap in pattern structure array;Form weakening layer in gap;Remove pattern structure, to form multiple spaced weakening structure.The preparation method of above-mentioned weakening structure, form weakening layer in the gap of pattern structure array, utilize the shape of gap to define the shape of weakening structure;Since the size and shape of each pattern structure in pattern structure array are all same, therefore, the gap shape between adjacent pattern structure is also same, after removing pattern array structure, can form the weakening structure of uniform size, so that all weakening structure has same adhesion value, improves chip transfer yield.

Claims

1. A method for preparing a weakened structure, characterized in that, include: Provide substrate; A patterned structure array is formed on the surface of the substrate. The patterned structure array includes a plurality of patterned structures arranged in an array. The patterned structure array has gaps. The patterned structure includes spherical particles. There are gaps between adjacent spherical particles, or adjacent spherical particles are in contact. A weakening layer is formed within the gap, the thickness of the weakening layer being greater than or equal to half the thickness of the pattern structure, and the material forming the pattern structure is different from the material forming the weakening layer. Remove the graphic structure to form multiple spaced-apart weakened structures.

2. A weakening structure, characterized in that, The weakened structure is prepared using the method for preparing a weakened structure as described in claim 1.

3. A method for fabricating a semiconductor structure, characterized in that, include: The weakened structure is prepared using the method for preparing the weakened structure according to claim 1; There are grooves between adjacent weakening structures; A sacrificial layer is formed within the groove, the sacrificial layer at least filling the groove; Multiple chips are formed on the surface of the resulting structure, and the chips are in contact with the weakened structure.

4. The method for preparing a semiconductor structure as described in claim 3, characterized in that, The thickness of the sacrificial layer is greater than or equal to the depth of the groove.

5. The method for preparing the semiconductor structure as described in claim 3 or 4, characterized in that, After forming multiple chips on the surface of the resulting structure, the method further includes: removing the sacrificial layer.

6. A semiconductor structure, characterized in that, The semiconductor structure is prepared by the semiconductor structure preparation method as described in any one of claims 3 to 5.

7. A chip transfer method, characterized in that, include: The semiconductor structure is prepared using the method for preparing the semiconductor structure according to any one of claims 3 to 5; The chip is picked up using a transfer device and transferred to the surface of the backplane.

8. A display panel, characterized in that, include: A backplane and a plurality of chips located on the surface of the backplane, wherein the plurality of chips are transferred to the surface of the backplane using the chip transfer method as described in claim 7.

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