Pixel unit and method of manufacturing the same

Abstract

A pixel unit and a manufacturing method thereof, the pixel unit includes a substrate, a circuit layer and three light emitting elements. The circuit layer includes a plurality of first electrode lines and a plurality of second electrode lines arranged on the substrate. The first electrode lines and the second electrode lines are side by side and separated by a distance. Each first electrode line has a first dam structure at a first end portion close to a corresponding adjacent second electrode line, and each second electrode line has a second dam structure at a second end portion close to a corresponding adjacent first electrode line. The three light emitting elements respectively emit red light, green light and blue light. The light emitting elements are respectively connected to one of the side by side adjacent first electrode lines and one of the second electrode lines in a flip chip type. The distance between the first and second electrode lines is narrow enough, so it can be applied to a micro light emitting diode wafer.

Description

Technical Field

[0001] Some embodiments disclosed herein relate to pixel units and their manufacturing methods. Background Technology

[0002] LED displays are mainly composed of arrayed LED light-emitting units. An LED light-emitting unit can be, for example, a package containing at least three LED light-emitting chips, providing red, green, and blue colors. To improve the resolution of LED displays, they are mainly developing towards smaller pitches, for example, using more and more LED light-emitting units on the display, and the package size of the LED light-emitting units is also getting smaller and smaller.

[0003] To reduce the size of LED packages, the size of the LED chips used also needs to be reduced; for example, micro LED chips or sub-millimeter LED chips are used. However, the linewidth in current LED packages is not narrow enough to meet the narrow linewidth requirements of using micro or sub-millimeter LED chips. Figures 9A to 9G The method of etching is disclosed to fabricate circuitry 908 on substrate 902. A conductive layer 904 and a dry ink layer 906 are first formed on substrate 902. Figure 9A and Figure 9B Then, exposure is performed using a light source LS (LS). Figure 9C ), Develop dry ink layer 906 ( Figure 9D The dried ink layer 906 after development is used as a mask to form the circuit 908. Figure 9E Then remove the dry ink layer 906. Figure 9F However, the line width between lines formed in the above manner is still not narrow enough, and as... Figure 9G As shown, the circuit 908 fabricated by etching is prone to uneven circuit shape, and it also causes positional misalignment when the LED chip 910 is bonded to the circuit 908 with solder paste 912. Figure 9H and Figure 9I ). Summary of the Invention

[0004] The pixel unit of some embodiments disclosed herein includes a substrate, a circuit layer, and three light-emitting elements. The circuit layer includes a plurality of first electrode lines and a plurality of second electrode lines arranged on the substrate. The first electrode lines and second electrode lines are arranged side-by-side and spaced apart. Each first electrode line has a first barrier structure near its corresponding adjacent second electrode line at a first end, and each second electrode line has a second barrier structure near its corresponding adjacent first electrode line at a second end. The three light-emitting elements emit red, green, and blue light, respectively. The light-emitting elements are connected in a flip-chip configuration to one of the adjacent first electrode lines and one of the adjacent second electrode lines.

[0005] In some embodiments, the first barrier structure protrudes from the upper surface of the first electrode line in a direction away from the substrate, and the second barrier structure protrudes from the upper surface of the second electrode line in a direction away from the substrate.

[0006] In some implementations, the first retaining wall structure and the first electrode circuit are integrally formed, and the second retaining wall structure and the second electrode circuit are integrally formed.

[0007] In some embodiments, each first electrode line has a first end with a straight sidewall, and each second electrode line has a second end with another straight sidewall.

[0008] In some embodiments, the first electrode line also has two opposing first sidewalls, which are respectively connected to both sides of the first retaining wall structure, and the second electrode line also has two opposing second sidewalls, which are respectively connected to both sides of the second retaining wall structure.

[0009] In some embodiments, each light-emitting element includes a first electrode and a second electrode, which are respectively connected to one of the first electrode lines and one of the second electrode lines that are side by side.

[0010] In some embodiments, the upper surface of the first barrier structure is higher than the lower surface of the first electrode of the light-emitting element, and the upper surface of the second barrier structure is higher than the lower surface of the second electrode of the light-emitting element.

[0011] In some embodiments, the first barrier structure and the second barrier structure are located between the first electrode and the second electrode of the light-emitting element.

[0012] In some embodiments, the pixel unit further includes a plurality of first pads and second pads, wherein each light-emitting element is electrically connected to a first electrode line through one of the first pads and electrically connected to a second electrode line through one of the second pads, the first pads and the second pads being respectively constrained by a first barrier structure and the second barrier structure.

[0013] In some embodiments, the three light-emitting elements are a first light-emitting element, a second light-emitting element, and a third light-emitting element, wherein the first light-emitting element is a red light-emitting diode chip, the second light-emitting element is a green light-emitting diode chip, and the third light-emitting element is a blue light-emitting diode chip.

[0014] In some embodiments, the three light-emitting elements are a first blue light-emitting diode chip, a second blue light-emitting diode chip, and a third blue light-emitting diode chip. The upper surface of the first blue light-emitting diode chip is provided with a red light wavelength conversion layer, and the upper surface of the second blue light-emitting diode chip is provided with a green light wavelength conversion layer.

[0015] In some embodiments, a blue light wavelength conversion layer is provided on the upper surface of the third blue light emitting diode chip.

[0016] In some embodiments, the light-emitting element is a micro-LED chip or a sub-millimeter LED chip, and the spacing between the first electrode line and the second electrode line is approximately between 3 micrometers and 20 micrometers.

[0017] In some implementations, the pixel unit also includes encapsulating adhesive that covers the substrate, circuit layer, and light-emitting element.

[0018] In some embodiments, the pixel unit further includes a common electrode portion, and a first electrode line is connected to the common electrode portion.

[0019] The method for manufacturing pixel units according to some embodiments of this disclosure includes forming a circuit layer on a substrate; using a laser to cut the circuit layer to form a plurality of first electrode lines and a plurality of second electrode lines in the circuit layer, wherein the first electrode lines and the second electrode lines are side by side and spaced apart; during the laser cutting of the circuit layer, forming a first barrier structure at a first end of each first electrode line and forming a second barrier structure at a second end of each second electrode line; placing three light-emitting elements on the circuit layer, wherein the three light-emitting elements emit red light, green light and blue light respectively, and are respectively connected in a flip-chip manner to one of the adjacent first electrode lines and one of the second electrode lines.

[0020] In some embodiments, the light-emitting element is a micro-LED chip or a sub-millimeter LED chip, and the spacing between the first electrode line and the second electrode line is approximately between 3 micrometers and 20 micrometers.

[0021] In some embodiments, the method further includes applying encapsulating adhesive to cover the substrate, circuit layer, and light-emitting element.

[0022] In this disclosure, using laser cutting to manufacture pixel units can shorten the line spacing and simultaneously reduce production costs. Furthermore, the barrier structure created by laser cutting can restrict the position of the light-emitting units, ensuring that the light-emitting units actually contact the electrode lines, thereby improving the yield of the pixel units. Attached Figure Description

[0023] The accompanying drawings illustrate one or more embodiments of this disclosure and, together with the description in the specification, serve to explain the principles of this disclosure. Wherever possible, the same reference numerals are used throughout the drawings to denote the same or similar elements in the embodiments. These drawings include:

[0024] Figure 1A A perspective view of pixel units in some embodiments disclosed herein is shown;

[0025] Figure 1B for Figure 1A The top view of the pixel units;

[0026] Figure 2A for Figure 1A A three-dimensional view of the substrate and circuit layers;

[0027] Figure 2B for Figure 2A Top view;

[0028] Figure 2C For along Figure 2A A cross-sectional view of line AA;

[0029] Figure 3A , Figure 4A , Figure 5A and Figure 6A A top view illustrating the manufacturing process of pixel units in some embodiments disclosed herein;

[0030] Figure 3B , Figure 4B , Figure 5B and Figure 6B In some embodiments disclosed herein, the pixel units are manufactured along the following paths during the manufacturing process. Figure 3A , Figure 4A , Figure 5A and Figure 6A A cross-sectional view of line AA;

[0031] Figure 7A Draw along Figure 6A Cross-sectional views of some implementations of line BB;

[0032] Figure 7B Draw along Figure 6A Cross-sectional views of some other embodiments of line BB;

[0033] Figures 8A to 8B The illustration shows pixel units of some other embodiments disclosed herein;

[0034] Figures 9A to 9I The diagram illustrates cross-sectional views of various stages of the manufacturing process.

[0035] [Symbol Explanation]

[0036] 100: Pixel unit

[0037] 100': Pixel unit

[0038] 102: Substrate

[0039] 110: Line Layer

[0040] 110': Line layer

[0041] 112: First electrode circuit

[0042] 112a: First side wall

[0043] 113: First end

[0044] 114: First retaining wall structure

[0045] 114a: Upper surface

[0046] 116: Second electrode circuit

[0047] 116a: Second side wall

[0048] 117: Second end

[0049] 118: Second retaining wall structure

[0050] 118a: Upper surface

[0051] 130: Light-emitting element

[0052] 130R: First light-emitting element

[0053] 130G: Second light-emitting element

[0054] 130B: Third light-emitting element

[0055] 132: First electrode

[0056] 132a: Lower surface

[0057] 134: Second electrode

[0058] 136R: Red wavelength conversion layer

[0059] 136G: Green wavelength conversion layer

[0060] 136B: Blue light wavelength conversion layer

[0061] 142: First solder pad

[0062] 144: Second solder pad

[0063] 150: Encapsulating adhesive

[0064] 160: Integrated Circuit Structure

[0065] 902: Substrate

[0066] 904: Conductive layer

[0067] 906: Dry ink layer

[0068] 908: Line

[0069] 910: Chip

[0070] 912: Solder paste

[0071] AA: Line

[0072] BB: Line

[0073] D1: Direction

[0074] D2: Direction

[0075] LC: Laser

[0076] LS: Light source Detailed Implementation

[0077] To make the description of this disclosure more detailed and complete, illustrative descriptions of embodiments and specific examples of this disclosure are provided below; however, this is not the only form of implementing or using the specific examples of this disclosure. The various embodiments disclosed below can be combined or substituted with each other where advantageous, and other embodiments can be added to one embodiment without further description or explanation.

[0078] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms, and these terms are only used to distinguish different elements, components, regions, layers, and / or portions. Therefore, a first element, component, region, layer, and / or portion discussed below may be referred to as a second element, component, region, layer, and / or portion without departing from the teachings of the present invention.

[0079] In the following description, numerous specific details will be set forth in order to enable the reader to fully understand the embodiments described below. However, the embodiments disclosed herein can be practiced without such specific details. In other instances, well-known structures and devices are illustrated schematically only in the figures for the purpose of simplifying the drawings.

[0080] Some embodiments disclosed herein can achieve narrower, finer line spacing in pixel units. Specifically, this disclosure uses laser-cut circuit layers to make the spacing between electrode lines in the circuit layers narrower. This can easily shorten the line spacing in pixel units and reduce process costs. In addition, laser-cut electrode lines have several advantages in improving pixel unit yield.

[0081] Figure 1A A perspective view of pixel unit 100 in some embodiments disclosed herein is shown, and Figure 1B for Figure 1A The image shows a top view of a pixel unit 100. The pixel unit 100 includes a substrate 102, a circuit layer 110, and three light-emitting elements 130. The circuit layer 110 is located on the substrate 102 and includes a plurality of first electrode lines 112 and a plurality of second electrode lines 116 arranged on the substrate. The light-emitting elements 130 are connected in a flip-chip configuration to the adjacent first electrode lines 112 and second electrode lines 116. The pixel unit 100 may also include an encapsulant 150. The encapsulant 150 is located on the substrate 102, covering the substrate 102, the circuit layer 110, and the light-emitting elements 130.

[0082] Figure 2A This is a perspective view of the substrate 102 and the circuit layer 110. Figure 2B for Figure 2A The top view, and Figure 2C For along Figure 2A A cross-sectional view of line AA. To clearly illustrate the structure of line layer 110, Figures 2A to 2C Only the substrate 102 and the circuit layer 110 of the pixel unit 100 are shown. In some embodiments, such as Figure 2A As shown, in one direction D1, three first electrode lines 112 are aligned side-by-side with three second electrode lines 116, and in another direction D2, the three first electrode lines 112 are aligned with each other. Figure 2BAs shown, adjacent first electrode lines 112 are separated by a first spacing S1, and the first electrode lines 112 and corresponding second electrode lines 116 are separated by a second spacing S2, wherein the second spacing S2 is narrower than the first spacing S1. In some embodiments, the first spacing S1 is in the range of about 50 micrometers to about 125 micrometers, while the second spacing S2 is in the range of about 3 micrometers to about 20 micrometers. Furthermore, different first electrode lines 112 may be connected to a common electrode portion 115. The first electrode lines 112 and second electrode lines 116 are electrodes with opposite electrical polarities, while the common electrode portion 115 and the first electrode lines 112 are electrodes with the same electrical polarity. For example, when the first electrode line 112 and the common electrode portion 115 are positive electrode lines, the second electrode line 116 is a negative electrode line, and vice versa. In some embodiments, the circuit layer 110 is made of metal, such as copper.

[0083] Each first electrode line 112 has a first baffle structure 114 at its first end 113 near the corresponding adjacent second electrode line 116, and each second electrode line 116 has a second baffle structure 118 at its second end 117 near the corresponding adjacent first electrode line 112. For example... Figure 2A or Figure 2C As shown, the first barrier structure 114 protrudes from the upper surface of the first electrode line 112 in a direction away from the substrate 102, and the second barrier structure 118 protrudes from the upper surface of the second electrode line 116 in a direction away from the substrate 102. Figure 2B As shown, the first electrode line 112 also has two opposing first sidewalls 112a, respectively connected to both sides of the first barrier structure 114, and the second electrode line 116 also has two opposing second sidewalls 116a, respectively connected to both sides of the second barrier structure 118. The first barrier structure 114 and the second barrier structure 118 can be formed by the accumulation of fine debris generated during the laser cutting process of the circuit layer 110, therefore the first barrier structure 114 and the second barrier structure 118 are made of the same material as the first electrode line 112 and the second electrode line 116. Because they are formed by the accumulation of fine debris, the upper surfaces of the first barrier structure 114 and the second barrier structure 118 can be rough surfaces.

[0084] Back Figure 1A and Figure 1B The light-emitting element 130 is a micro-light-emitting diode chip or a sub-millimeter light-emitting diode chip. In some embodiments, the light-emitting element 130 may include a first light-emitting element 130R, a second light-emitting element 130G, and a third light-emitting element 130B, such as... Figures 1A to 1B As shown. The first light-emitting element 130R, the second light-emitting element 130G, and the third light-emitting element 130B emit red light, green light, and blue light, respectively. The electrodes of each light-emitting element 130 (e.g., ...) Figure 6BThe first electrode 132 and the second electrode 134 are connected to one of the first electrode lines 112 and one of the second electrode lines 116 that are arranged side by side. It should be noted that... Figures 1A to 1B The number of light-emitting elements 130, first electrode lines 112 and second electrode lines 116 is not limited to 3. For example, the number can be greater than 3, but the number of light-emitting elements 130, first electrode lines 112 and second electrode lines 116 must be the same.

[0085] The substrate 102 may be a substrate in which integrated circuits are incorporated, and may be composed of any suitable material, such as BT resin, molded interconnect substrate (MIS), epoxy molding compound (EMC), sheet molding compound (SMC), FR-4, glass, polyimide, silicone, or the like. In some embodiments, the thickness of the substrate 102 is in the range of about 5 micrometers to about 150 micrometers.

[0086] The encapsulant 150 can be a light-transmitting material. Furthermore, black toner can be filled into the light-transmitting material. The light-transmitting material can be made of any suitable material, such as silicone resin, epoxy resin, etc. In some embodiments, the thickness of the encapsulant 150 is between about 100 micrometers and about 300 micrometers.

[0087] Figure 3A , Figure 4A , Figure 5A and Figure 6A A top view illustrating the manufacturing process of pixel unit 100 in some embodiments disclosed herein. Figure 3B , Figure 4B , Figure 5B and Figure 6B In some embodiments disclosed herein, the pixel unit 100 is manufactured along the following steps during the manufacturing process: Figure 3A , Figure 4A , Figure 5A and Figure 6A A cross-sectional view of line AA. Figure 3A and Figure 3B In this process, a circuit layer 110' is formed on the substrate 102. This circuit layer 110' is made of a conductive metal material, such as a copper layer. The circuit layer 110' is a patterned circuit layer and can be formed as three strips (or fingers) interconnected at one end, such as... Figure 3A As shown. Each strip has a first spacing S1 between it. The patterned circuit layer 110' can be cut out, for example, by an etching process, with the cut sidewalls (such as...) Figure 2A and Figure 2BThe first sidewall 112a and the second sidewall 116a in the middle will have rounded corners with the upper surface (as described later). Figure 7A and Figure 7B (As shown). In some embodiments, the first pitch S1 is in the range of about 50 micrometers to about 125 micrometers. It should be noted that the pattern of the line layer 110' is not limited to... Figure 3A and Figure 3B The pattern shown can be any suitable pattern; for example, line layer 110' can also be three non-interconnected and side-by-side strips.

[0088] Next, in Figure 4A and Figure 4B In the process, laser LC cutting is used to cut the circuit layer 110' to form a circuit layer 110 containing a plurality of first electrode lines 112 and a plurality of second electrode lines 116, such as Figure 5A and Figure 5B As shown, multiple first electrode lines 112 and multiple second electrode lines 116 are separated by a second spacing S2. Since laser LC can cut finer line spacings, the second spacing S2 is narrower than the first spacing S1. Using the laser cutting described herein allows for a narrower second spacing S2 between the first electrode lines 112 and the second electrode lines 116, for example, between approximately 3 micrometers and approximately 20 micrometers, making it applicable to micro-LED wafers or sub-millimeter LED wafers. Furthermore, using laser LC to cut the line layer 110' also reduces the cost and complexity of the spacing reduction process.

[0089] During laser LC cutting of circuit layer 110', due to the characteristics of laser cutting, the first end 113 and the second end 117 respectively have straight sidewalls 113a and 117a (see...). Figure 6B This allows the first electrode line 112 and the second electrode line 116 to make better contact with the light-emitting elements (e.g., light-emitting elements) in subsequent processes. Figure 6A The light-emitting element 130 in the middle and Figure 6B The third light-emitting element 130B in the process. Fine debris generated by laser LC cutting of the circuit layer 110' accumulates on both sides of the cut, forming a first barrier structure 114 at the first end 113 of each first electrode line 112 and a second barrier structure 118 at the second end 117 of each second electrode line 116. The first end 113 and the second end 117 are located on opposite sides of the cut. The fine debris generated by laser LC cutting of the circuit layer 110' is made of the same material as the first electrode lines 112 and 116; therefore, the first barrier structure 114 is integrally formed with the first electrode line 112, and the second barrier structure 118 is integrally formed with the second electrode line 116. Figure 5A and Figure 5B As shown.

[0090] Next, in Figure 6A and Figure 6B In this process, light-emitting elements 130 are placed on the circuit layer 110, and the light-emitting elements 130 may include a first light-emitting element 130R, a second light-emitting element 130G, and a third light-emitting element 130B. Each light-emitting element 130 includes a first electrode 132 and a second electrode 134, which are connected to one of the first electrode lines 112 and one of the second electrode lines 116 arranged side by side. Specifically, before placing the light-emitting elements 130, an appropriate amount of solder paste is applied to the inner sides of the first barrier structure 114 and the second barrier structure 118. Then, the light-emitting elements 130 are placed on the solder paste on the first electrode lines 112 and the second electrode lines 116, and the solder is melted. After the solder is melted, a plurality of first solder pads 142 and second solder pads 144 are formed. Each light-emitting element 130 is electrically connected to the first electrode line 112 through one of the first solder pads 142 and electrically connected to the second electrode line 116 through one of the second solder pads 144. The positions of the first welding pad 142 and the second welding pad 144 are restricted by the first retaining wall structure 114 and the second retaining wall structure 118, respectively.

[0091] During the soldering process, due to the fluidity of the molten solder, the position of the light-emitting element 130 may shift slightly when placed on the molten solder. However, Figure 6B In this circuit layer 110, the circuit layer includes a first barrier structure 114 and a second barrier structure 118, which can abut against the first electrode 132 and the second electrode 134 to limit the position of the light-emitting element 130. Specifically, the upper surface 114a of the first barrier structure 114 and the upper surface 118a of the second barrier structure 118 are higher than the lower surface 132a of the first electrode 132 of the light-emitting element 130, and the first barrier structure 114 and the second barrier structure 118 are located between the first electrode 132 and the second electrode 134 of the light-emitting element 130. Even if the amount of solder paste is uneven, the first barrier structure 114 and the second barrier structure 118 can still limit the position of the light-emitting element 130, ensuring that the light-emitting element 130 will not shift. Therefore, after the solder melting is completed, the first electrode 132 and the second electrode 134 of the light-emitting element 130 can still contact the first electrode line 112 and the second electrode line 116, respectively. In this way, the first barrier structure 114 and the second barrier structure 118 of the pixel unit 100 reduce the risk of poor contact between the light-emitting element 130 and the first electrode line 112 and the second electrode line 116, thereby improving the yield of the pixel unit 100. After the solder melting is completed, the encapsulating adhesive 150 is then formed. Figure 2A Details of encapsulating adhesive 150 and... Figure 2A The encapsulating adhesive 150 is the same as or similar to that used in this product, so it will not be described in detail here.

[0092] Figure 7A Draw along Figure 6ACross-sectional views of some implementations of line BB. Figure 7A In the first light-emitting element 130R, the second light-emitting element 130G, and the third light-emitting element 130B, the first electrode 132 contacts the first electrode line 112 through the first bonding pad 142. Since the first electrode line 112 is formed by a conventional etching process, the first sidewall 112a of the first electrode line 112 has a rounded corner with the upper surface, and the curvature of the first sidewall 112a of the first electrode line 112 is greater than that of the sidewall 113a of the first end 113. Figure 6B (Larger.) Although not in Figure 7A As shown in the figure, the second sidewall 116a of the second electrode line 116 also has a rounded corner between it and the upper surface, and the curvature of the second sidewall 116a of the second electrode line 116 is greater than that of the sidewall 117a of the second end 117. Figure 5B (It is larger.)

[0093] In some embodiments, the first light-emitting element 130R is a red light-emitting diode chip, the second light-emitting element 130G is a green light-emitting diode chip, and the third light-emitting element 130B is a blue light-emitting diode chip. In other embodiments, the first light-emitting element 130R, the second light-emitting element 130G, and the third light-emitting element 130B are respectively the first, second, and third blue light-emitting diode chips. When the first light-emitting element 130R is the first blue light-emitting diode chip, a red light wavelength conversion layer 136R is provided on the upper surface of the first light-emitting element 130R to convert the blue light emitted by the first blue light-emitting diode chip into red light. When the second light-emitting element 130G is the second blue light-emitting diode chip, a green light wavelength conversion layer 136G is provided on the upper surface of the second light-emitting element 130G to convert the blue light emitted by the second blue light-emitting diode chip into green light. When the third light-emitting element 130B is the third blue light-emitting diode chip, a blue light wavelength conversion layer 136B may be provided on the upper surface of the third light-emitting element 130B or may not be provided. In some implementations, the blue light wavelength conversion layer 136B can be omitted, such as... Figure 7B As shown. In some embodiments, the red wavelength conversion layer 136R, the green wavelength conversion layer 136G, and the blue wavelength conversion layer 136B may contain quantum dot materials or phosphor materials.

[0094] Figures 8A to 8B The illustration shows a pixel unit 100' in another embodiment disclosed herein. The pixel unit 100' is similar to the pixel unit 100 described above. The difference is that the integrated circuit of the pixel unit 100 is embedded in the substrate 102, while the integrated circuit of the pixel unit 100' is disposed in the integrated circuit structure 160. In some embodiments, the integrated circuit structure 160 may be adjacent to the light-emitting element 130R, the light-emitting element 130G, and the light-emitting element 130B, such as... Figure 8Aand Figure 8B As shown.

[0095] In this disclosure, using laser cutting to manufacture pixel units can shorten the line spacing and simultaneously reduce production costs. Furthermore, the barrier structure created by laser cutting can restrict the position of the light-emitting units, ensuring that the light-emitting units actually contact the electrode lines, thereby improving the yield of the pixel units.

[0096] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art may make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the appended claims.

Claims

1. A pixel unit, characterized in that, Include: One substrate; A circuit layer includes a plurality of first electrode lines and a plurality of second electrode lines arranged on a substrate. The plurality of first electrode lines and the plurality of second electrode lines are arranged side by side and separated by a distance. Each first electrode line has a first barrier structure near a first end of a corresponding adjacent plurality of second electrode lines, and each second electrode line has a second barrier structure near a second end of a corresponding adjacent plurality of first electrode lines. The first barrier structure and the second barrier structure are made of the same material as the circuit layer, and the upper surface of the first barrier structure and the second barrier structure is a rough surface. as well as Three light-emitting elements emit red, green, and blue light respectively, wherein the three light-emitting elements are respectively connected in a flip-chip configuration to one of the plurality of adjacent first electrode lines and one of the plurality of second electrode lines.

2. The pixel unit as described in claim 1, characterized in that, The first barrier structure protrudes from an upper surface of the first electrode line in a direction away from the substrate, and the second barrier structure protrudes from an upper surface of the second electrode line in a direction away from the substrate.

3. The pixel unit as described in claim 1, characterized in that, The first retaining wall structure and the first electrode circuit are integrally formed, and the second retaining wall structure and the second electrode circuit are integrally formed.

4. The pixel unit as described in claim 1, characterized in that, Each of the first electrode lines has a straight sidewall at its first end, and each of the second electrode lines has another straight sidewall at its second end.

5. The pixel unit as described in claim 1, characterized in that, The first electrode line also has two opposing first side walls, which are respectively connected to the two sides of the first retaining wall structure, and the second electrode line also has two opposing second side walls, which are respectively connected to the two sides of the second retaining wall structure.

6. The pixel unit as described in claim 1, characterized in that, Each of the light-emitting elements includes a first electrode and a second electrode, the first electrode and the second electrode being respectively connected to one of the plurality of first electrode lines and one of the plurality of second electrode lines arranged side by side.

7. The pixel unit as described in claim 6, characterized in that, The upper surface of the first barrier structure is higher than the lower surface of the first electrode of the light-emitting element, and the upper surface of the second barrier structure is higher than the lower surface of the second electrode of the light-emitting element.

8. The pixel unit as described in claim 6, characterized in that, The first and second barrier structures are located between the first and second electrodes of the light-emitting element.

9. The pixel unit as claimed in claim 1, characterized in that, It also includes a plurality of first solder pads and second solder pads, wherein each of the light-emitting elements is electrically connected to the first electrode line through one of the plurality of first solder pads and electrically connected to the second electrode line through one of the plurality of second solder pads, and the plurality of first solder pads and second solder pads are respectively constrained by the first barrier structure and the second barrier structure.

10. The pixel unit as claimed in claim 1, characterized in that, The three light-emitting elements are a first light-emitting element, a second light-emitting element, and a third light-emitting element. The first light-emitting element is a red light-emitting diode chip, the second light-emitting element is a green light-emitting diode chip, and the third light-emitting element is a blue light-emitting diode chip.

11. The pixel unit as claimed in claim 1, characterized in that, The three light-emitting elements are a first blue light-emitting diode chip, a second blue light-emitting diode chip, and a third blue light-emitting diode chip. The upper surface of the first blue light-emitting diode chip is provided with a red light wavelength conversion layer, and the upper surface of the second blue light-emitting diode chip is provided with a green light wavelength conversion layer.

12. The pixel unit as claimed in claim 11, characterized in that, The upper surface of the third blue light emitting diode chip is provided with a blue light wavelength conversion layer.

13. The pixel unit as claimed in claim 1, characterized in that, The three light-emitting elements are micro LED chips or sub-millimeter LED chips, and the spacing between the plurality of first electrode lines and the plurality of second electrode lines is between 3 micrometers and 20 micrometers.

14. The pixel unit as claimed in claim 1, characterized in that, It also includes an encapsulating adhesive that covers the substrate, the circuit layer, and the three light-emitting elements.

15. The pixel unit as claimed in claim 1, characterized in that, It also includes a common electrode section, wherein the plurality of first electrode lines are connected to the common electrode section.

16. A method for manufacturing a pixel unit, characterized in that, Include: A circuit layer is formed on a substrate; The circuit layer is cut with a laser to form a plurality of first electrode lines and a plurality of second electrode lines in the circuit layer, wherein the plurality of first electrode lines and the plurality of second electrode lines are arranged side by side and separated by a spacing. During laser cutting of the circuit layer, a first barrier structure is formed at a first end of each first electrode line, and a second barrier structure is formed at a second end of each second electrode line, wherein the first barrier structure and the second barrier structure are formed by the accumulation of fine debris generated during the laser cutting of the circuit layer; and Three light-emitting elements are placed on the circuit layer, wherein the three light-emitting elements emit red light, green light and blue light respectively, and are respectively connected in flip-chip form to one of the plurality of adjacent first electrode lines and one of the plurality of second electrode lines.

17. The method as described in claim 16, characterized in that, The three light-emitting elements are micro LED chips or sub-millimeter LED chips, and the spacing between the plurality of first electrode lines and the plurality of second electrode lines is between 3 micrometers and 20 micrometers.

18. The method as described in claim 16, characterized in that, It also includes applying an encapsulating adhesive to cover the substrate, the circuit layer, and the three light-emitting elements.

Images