A characterization method for testing and evaluating deep charge-discharge effect of material

Abstract

The application relates to the technical field of space application, in particular to a characterization method for testing and evaluating deep charging and discharging effects of materials, which simultaneously measures the surface potential of a medium material in a satellite and a discharge signal, finds a region with high potential through the surface potential at different positions, simultaneously measures deep discharge of an internal structure of the satellite, obtains the region of the deep discharge by comparing the surface potential at different positions of the internal structure of the satellite before and after the discharge, can quickly determine the region of the internal structure of the satellite prone to discharge, facilitates monitoring of a key discharge risk region, and enables smooth deep charging and discharging evaluation test of a complex internal structure of the satellite, so that the effect of the evaluation test is achieved.

Description

Technical Field

[0001] This application relates to the field of space application technology, and more specifically, to a characterization method for testing and evaluating the deep charge-discharge effect of materials. Background Technology

[0002] Deep charge / discharge in satellites is generally caused by high-energy electrons (0.1–10 MeV) entering materials in space. These high-energy electrons can penetrate satellite structures (surface materials, cable sheaths, etc.) and deposit charge on cable insulation, printed circuit boards, capacitor components, integrated circuit packages, or suspended conductors. If the deposition rate of incident electrons within the dielectric exceeds its discharge rate, the charge density within the dielectric will gradually increase, and the electric field strength will also increase. When the built-in electric field strength exceeds the breakdown strength of the dielectric material, deep material discharge (also known as electron-induced electromagnetic pulse, ECEMP) will occur. When the transient pulse generated by the internal discharge couples to the spacecraft's electronic systems, it can cause abnormal logic switches, permanent failure of the electronic systems, or degradation of the performance of sensitive components, leading to the destruction of the entire system. In addition to generating electromagnetic interference and damage to electronic equipment, electrostatic discharge also causes damage to surface materials or degradation of their physical properties. With the improvement of satellite electronic system performance and the use of a large number of new materials, satellites are becoming increasingly sensitive to the deep charge / discharge effects on dielectric materials caused by the high-energy electronic environment in space. Satellite deep charge / discharge protection technology has become one of the key technologies that must be solved in the development of long-life application satellites.

[0003] Due to the diverse internal structures of satellites, previous evaluation tests on deep charging and discharging of satellite internal structures only used the measurement of discharge signals. For evaluation tests on deep charging and discharging of complex structures, it is impossible to obtain the discharge location in the structure through experiments, so it is impossible to determine the discharge risk area and achieve the desired evaluation effect. Summary of the Invention

[0004] This application provides a characterization method for testing and evaluating the deep charge-discharge effect of materials. For various dielectric materials used in the internal structure of satellites, an experimental method is adopted to simultaneously measure the surface potential and discharge signal. This method can measure the discharge signal and possible discharge area in the internal structure of satellites in real time during high-energy electron irradiation.

[0005] To achieve the above objectives, this application provides a characterization method for testing and evaluating the deep charge-discharge effect of materials, comprising the following steps: Step 1: Before the test begins, the material sample is placed inside a vacuum chamber, facing the simulated source system, so that the electron beam emitted by the simulated source system enters the interior of the material sample; Step 2: A non-contact surface potentiometer probe is placed in front of the material sample, and the non-contact surface potentiometer probe is connected to a non-contact surface potentiometer to monitor the surface potential of the material sample; Step 3: The metal structure of the material sample is connected to a discharge signal monitoring system; Step 4: At the start of the test, the vacuum chamber is evacuated using a vacuum pumping system. Step 5: Turn on the simulation source system and adjust it so that the emitted high-energy electron beam enters the interior of the material sample; Step 6: Determine the area of ​​the material sample where the surface potential needs to be measured, move the non-contact surface potentiometer probe to different test areas on the surface of the material sample, measure their surface potential, and monitor the discharge signal through the discharge signal monitoring system; Step 7: Record the potential of different test areas on the surface of the material sample, and compare the changes in potential of different test areas on the surface of the material sample before and after discharge based on the monitored discharge signal. The area with the largest rate of change is the discharge area; Step 8: After the test, turn off the non-contact surface potentiometer probe, the discharge signal monitoring system, the simulation source system, and the vacuum system in sequence.

[0006] Furthermore, in step 3, the discharge signal monitoring system includes an oscilloscope and a grounding resistor, both of which are connected to the material sample.

[0007] Furthermore, the oscilloscope has a bandwidth >100MHz and a grounding resistor value of 130-170Ω.

[0008] Furthermore, in step 4, after the vacuum system evacuates the vacuum chamber, the vacuum value is 6 × 10⁻⁶. -5 Pa.

[0009] Furthermore, in step 6, the areas of the material sample where the surface potential needs to be measured include areas with large structural areas, suspended conductor areas, grounded areas, and areas connected to conductive conductors.

[0010] The present invention provides a characterization method for testing and evaluating the deep charge-discharge effect of materials, which has the following beneficial effects:

[0011] This application simultaneously measures the surface potential and discharge signal of the internal dielectric material of the satellite. By measuring the surface potential at different locations, regions with high potential are identified. At the same time, deep discharge of the internal structure of the satellite is measured. By comparing the surface potential at different locations of the internal structure of the satellite before and after discharge, the regions of deep discharge are obtained. This allows for the rapid identification of areas in the internal structure of the satellite that are prone to discharge, facilitating the monitoring of key discharge risk areas. This enables the deep charge and discharge evaluation test of the complex internal structure of the satellite to be carried out smoothly and achieve the desired evaluation effect. Attached Figure Description

[0012] The accompanying drawings, which form part of this application, are used to provide a further understanding of the application and to make other features, objects, and advantages of the application more apparent. The illustrative embodiments and descriptions of this application are used to explain the application and do not constitute an undue limitation of the application. In the drawings:

[0013] Figure 1 This is a schematic diagram of the deep charge-discharge effect structure of the test and evaluation material provided in the embodiments of this application;

[0014] Figure 2 This is a measurement connection diagram of a discharge signal monitoring system provided according to an embodiment of this application;

[0015] Figure 3 This is a schematic diagram of the test site for the test medium plate and metal brush provided in the embodiments of this application;

[0016] In the figure: 1-vacuum chamber, 2-simulation source system, 3-material sample, 4-non-contact surface potentiometer probe, 5-non-contact surface potentiometer, 6-vacuum system, 7-discharge signal monitoring system, 71-oscilloscope, 72-grounding resistor. Detailed Implementation

[0017] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0018] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0019] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0020] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0021] In addition, the term "multiple" should mean two or more.

[0022] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0023] like Figure 1As shown, this application provides a characterization method for testing and evaluating the deep charge-discharge effect of materials, including the following steps: Step 1: Before the test begins, the material sample 3 is placed inside the vacuum chamber 1, facing the simulated source system 2, so that the electron beam emitted by the simulated source system 2 enters the interior of the material sample 3; Step 2: A non-contact surface potentiometer probe 4 is placed in front of the material sample 3, and the non-contact surface potentiometer probe 4 is connected to a non-contact surface potentiometer 5, so that the non-contact surface potentiometer probe 4 monitors the surface potential of the material sample 3; Step 3: The metal structure of the material sample 3 is connected to the discharge signal monitoring system 7; Step 4: At the start of the test, the vacuum chamber 1 is evacuated by the vacuum system 6; Step 5: Turn on the simulation source system 2 and adjust it so that the high-energy electron beam emitted by the simulation source system 2 enters the interior of the material sample 3; Step 6: Determine the area of ​​the material sample 3 where the surface potential needs to be measured, move the non-contact surface potentiometer probe 4 to different test areas on the surface of the material sample 3, measure its surface potential, and monitor the discharge signal through the discharge signal monitoring system 7; Step 7: Record the potential of different test areas on the surface of the material sample 3, and compare the changes in potential of different test areas on the surface of the material sample 3 before and after discharge based on the monitored discharge signal. The area with the largest rate of change is the discharge area; Step 8: After the test, turn off the non-contact surface potentiometer probe 4, the discharge signal monitoring system 7, the simulation source system 2, and the vacuum system 6 in sequence.

[0024] Specifically, in order to study the deep charge-discharge effect and its protection technology, it is necessary to simulate the deep charge-discharge effect on the ground and evaluate the deep charge-discharge performance of the satellite's internal structure. The deep discharge and discharge location of the satellite's internal structure are important evaluation contents. The characterization method for testing and evaluating the deep charge-discharge effect of materials provided in this application mainly targets various dielectric materials used in the satellite's internal structure. It adopts an experimental method that simultaneously measures the surface potential and discharge signal, and measures the discharge signal and possible discharge area of ​​the dielectric material in the satellite's internal structure in real time during high-energy electron irradiation.

[0025] More specifically, the characterization method provided in this application mainly uses the following principle to determine the discharge region: When high-energy electrons are incident into the internal structure of a satellite, they are easily deposited inside the material, making the material electrically charged. The accumulation of these deposited charges causes the surface of the dielectric material to have a certain potential (relative to other nearby structures), forming an electric field with the surrounding area. When the electric field exceeds the breakdown field strength of the dielectric material, a discharge phenomenon will be triggered. Since the discharge is inside the structure, the discharge region cannot be determined by video monitoring. Therefore, this application mainly finds the region with the greatest potential change before and after the discharge by monitoring the surface potential of the dielectric material inside the satellite before and after the discharge, based on the phenomenon that the electric field decreases after the discharge. This region is the discharge region.

[0026] Furthermore, such as Figure 2 As shown, in step 3, the discharge signal monitoring system 7 includes an oscilloscope 71 and a grounding resistor 72. Both the oscilloscope 71 and the grounding resistor 72 are connected to the material sample 3. The discharge signal monitoring system 7 mainly monitors the changes in the discharge signal through the oscilloscope 71 and sets the grounding resistor 72, which can measure the discharge signal in real time without damaging the instrument.

[0027] Furthermore, the bandwidth of the oscilloscope 71 is greater than 100MHz, and the resistance of the grounding resistor 72 is 130-170Ω. In the embodiments of this application, the bandwidth of the oscilloscope 71 and the resistance of the grounding resistor 72 are selected according to the actual situation.

[0028] Furthermore, in step 4, after the vacuum system 6 evacuates the vacuum, the vacuum value inside the vacuum chamber 1 is 6 × 10⁻⁶. -5 Pa.

[0029] Furthermore, in step 6, the areas where the surface potential of material sample 3 needs to be measured include areas with large structural areas, suspended conductor areas, grounded areas, and areas connected to conductive conductors. In this embodiment, the surface potential test at different locations within the satellite's internal structure preferably uses a high-voltage adapted non-contact surface potentiometer 5. The potential of key discharge areas is measured by moving the non-contact surface potentiometer probe 4. These key discharge areas mainly include areas with large dielectric material structural areas, suspended conductor areas, grounded areas, and areas where conductive conductors are connected to dielectric materials. Then, the potential changes in the key discharge areas are compared to identify the area with the largest potential change, which is the discharge location area.

[0030] Specifically, in the embodiments of this application, a typical satellite internal structure is used as an example to evaluate its deep charge and discharge performance, such as... Figure 3 As shown, the satellite's internal structure includes a dielectric substrate with multiple metal brushes. During satellite operation, these brushes experience voltage and current, which, in the space environment, induces a deep charge-discharge effect on the substrate, potentially damaging the satellite's internal structure. Therefore, deep charge-discharge tests can be conducted on the dielectric substrate during the design process to identify areas of intense deep charge-discharge, allowing for targeted design. The characterization method described in this application's embodiment can characterize the intensity of deep charge-discharge by assessing the depth of the dielectric substrate's deep charge-discharge potential. Experiments were conducted on dielectric substrates and metal brushes with different structures, obtaining deep charge potentials and discharge signals for substrates with varying spacing and thickness. The results show that dielectric substrates thicker than 5mm exhibit higher deep charge potentials and discharge phenomena, representing areas of intense deep charge-discharge. Furthermore, different areas of intense deep charge-discharge were identified based on different structures, providing a basis for the design of the satellite's internal structure.

[0031] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A characterization method for testing and evaluating the deep charge-discharge effect of materials, characterized in that, The steps include the following: Step 1: Before the test begins, place the material sample inside the vacuum chamber and position it directly opposite the simulation source system so that the electron beam emitted by the simulation source system can penetrate into the interior of the material sample. Step 2: Place a non-contact surface potentiometer probe in front of the material sample and connect the non-contact surface potentiometer probe to the non-contact surface potentiometer so that the non-contact surface potentiometer probe can monitor the surface potential of the material sample. Step 3: Connect the metal structure of the material sample to the discharge signal monitoring system; Step 4: At the start of the test, the vacuum chamber is evacuated using the vacuum system; Step 5: Turn on the simulation source system and adjust it so that the high-energy electron beam emitted by the simulation source system enters the interior of the material sample; Step 6: Determine the area of ​​the material sample where the surface potential needs to be measured, move the non-contact surface potentiometer probe to different areas on the surface of the material sample, measure the surface potential, and monitor the discharge signal through the discharge signal monitoring system at the same time. The areas of material samples where surface potential needs to be measured include areas with large structural areas, suspended conductor areas, grounded areas, and areas connected to conductive conductors. Step 7: Record the potential of different test areas on the surface of the material sample. Based on the monitored discharge signal, compare the changes in potential of different test areas on the surface of the material sample before and after discharge. By observing the phenomenon that the electric field decreases after discharge, and by monitoring the surface potential of the medium material of the satellite's internal structure before and after discharge, find the area with the largest potential change before and after discharge. The area with the largest rate of change is the discharge area. Step 8: After the test is completed, turn off the non-contact surface potentiometer probe, discharge signal monitoring system, simulation source system and vacuum system in sequence.

2. The characterization method for testing and evaluating the deep charge-discharge effect of materials according to claim 1, characterized in that, In step 3, the discharge signal monitoring system includes an oscilloscope and a grounding resistor, both of which are connected to the material sample.

3. The characterization method for testing and evaluating the deep charge-discharge effect of materials according to claim 2, characterized in that, The oscilloscope has a bandwidth of >100MHz, and the grounding resistor has a resistance of 130-170Ω.

4. The characterization method for testing and evaluating the deep charge-discharge effect of materials according to claim 1, characterized in that, In step 4, after the vacuum system evacuates the vacuum chamber, the vacuum value is 6 × 10⁻⁶. -5 Pa.

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