A new beryllium copper alloy probe for detecting semiconductor chips

Abstract

The application discloses a new beryllium copper alloy probe for detecting semiconductor chips, and particularly relates to the probe technical field, raw materials are smelted, and are cast into blank materials, the blank materials are made into copper alloy foils, then a surface treatment agent is sprayed on the surface of the copper alloy foils, and the copper alloy foils are put into a microwave plasma CVD device, then hydrogen is introduced into the device, and heating and heat preservation are carried out, then methane gas is introduced for reaction, hydrogen is introduced again to discharge the methane gas, and finally cooling and cooling to room temperature are carried out, so that a surface modified copper alloy foil is obtained, finally the prepared surface modified copper alloy foil is die forged into a shape, and after heat treatment, a semi-finished probe is obtained, the probe head is plated with gold, and the new beryllium copper alloy probe for detecting semiconductor chips is obtained, the metal elements Rh, Ru and Pd in the material make the electrical function of the new beryllium copper alloy probe better, the new beryllium copper alloy probe is high-temperature resistant, and the electrical damage is reduced.

Description

Technical Field

[0001] This invention relates to the field of probe technology, specifically a novel beryllium copper alloy probe for detecting semiconductor chips. Background Technology

[0002] The common drawback of beryllium copper materials currently used in the market is their short service life. Factors affecting service life can be divided into two categories: 1. Electrical damage, which occurs when the needle tip heats up during use after the product is powered on, causing it to burn out; 2. Physical wear, which occurs during use when the product is being tested, causing wear due to friction between the needle tip and the object being tested. Because beryllium copper is relatively soft, it wears out quickly, resulting in a short service life. Based on this, there is an urgent need for alternative new materials. Therefore, our company has developed and invented a new beryllium copper alloy material to meet market demand. Summary of the Invention

[0003] The purpose of this invention is to provide a novel beryllium copper alloy probe for detecting semiconductor chips, so as to solve the problems mentioned in the background art.

[0004] To achieve the above objectives, the present invention provides the following technical solution: A novel beryllium copper alloy probe for inspecting semiconductor chips, the specific processing steps of which are as follows: S1. According to the weight ratio, weigh out Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru, and Cu, wherein the weight percentage of Be is 1.80-1.90%, the weight percentage of Zn is 0.005-0.015%, the weight percentage of Co is 0.20-0.24%, the weight percentage of Cr is 0.0025-0.0075%, the weight percentage of Ni+Fe is 0.015-0.045%, and the weight percentage of P is... The weight percentages of b are 0.0015-0.0045%, Ag is 0.02-0.06%, Sn is 0.001-0.003%, Si is 0.015-0.045%, Pd is 0.0015-0.0045%, Rh is 0.01-0.03%, Ru is 0.01-0.03%, and Cu is 97.2-97.96%. S2. The Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru in S1 are smelted with Cu, cast into a billet, and then the billet is made into copper alloy foil. S3. Spray a surface treatment agent onto the copper alloy foil surface in S2 and place it into a microwave plasma chemical vapor deposition (CVD) apparatus; S4. Hydrogen gas is introduced into a microwave plasma CVD equipment and heated and kept at a certain temperature. Then, methane gas is introduced to react. Hydrogen gas is then introduced to remove the methane gas. Finally, the temperature is cooled to room temperature to obtain a surface-modified copper alloy foil. S5. The surface-modified copper alloy foil obtained in S4 is forged and heat-treated to obtain a semi-finished probe. The probe head is then gold-plated to obtain a new type of beryllium copper alloy probe for detecting semiconductor chips.

[0005] As a further aspect of the present invention: in step S1, the weight ratio is as follows: Be 1.85%, Zn 0.01%, Co 0.22%, Cr 0.005%, Ni+Fe 0.03%, Pb 0.003%, Ag 0.04%, Sn 0.002%, Si 0.03%, Pd 0.003%, Rh 0.02%, Ru 0.02%, Cu 97.767%.

[0006] As a further aspect of the present invention: the heating temperature in S4 is 930-1050°C, the holding time is 25-30 minutes, and the reaction time with methane gas is 35-45 minutes.

[0007] As a further aspect of the present invention: in S4, the hydrogen gas flow rate is 1.8 L / min, and the methane gas flow rate is 420 ml / min.

[0008] As a further embodiment of the present invention: the heat treatment temperature in S5 is 530°C and the time is 150 minutes.

[0009] As a further aspect of the present invention, it also includes a probe body and a probe tip, wherein a notch is provided on the probe tip, a contact is embedded inside the notch, and a test lead is installed and connected to the tail of the probe body.

[0010] As a further aspect of the present invention, the volume of the contact is smaller than the volume of the probe tip.

[0011] Compared with the prior art, the beneficial effects of the present invention are: the novel beryllium copper alloy probe for detecting semiconductor chips has better electrical properties, high temperature resistance, and reduced electrical damage by incorporating metal elements such as Rh, Ru, and Pd into the material. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the structure of the present invention.

[0013] The components are: 1. Probe body; 2. Probe tip; 3. Notch; 4. Contact; 5. Test lead. Detailed Implementation

[0014] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0015] Example 1 A novel beryllium copper alloy probe for detecting semiconductor chips comprises, by weight percentage: 1.80% Be, 0.005% Zn, 0.20% Co, 0.0025% Cr, 0.015% Ni+Fe, 0.0015% Pb, 0.02% Ag, 0.001% Sn, 0.015% Si, 0.0015% Pd, 0.01% Rh, 0.01% Ru, and 97.2% Cu; The specific processing steps are as follows: S1. Weigh out Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru and Cu according to the weight ratio; S2. The Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru in S1 are smelted with Cu, cast into a billet, and then the billet is made into copper alloy foil. S3. Spray a surface treatment agent onto the copper alloy foil surface in S2 and place it into a microwave plasma chemical vapor deposition (CVD) apparatus; S4. Hydrogen gas is introduced into a microwave plasma CVD apparatus and heated and held at that temperature. Then, methane gas is introduced to react, followed by the introduction of hydrogen gas to expel the methane gas. Finally, the mixture is cooled to room temperature to obtain a surface-modified copper alloy foil. The heating temperature is 930-1050°C, the holding time is 25-30 minutes, and the reaction time with methane gas is 35-45 minutes. The hydrogen gas flow rate is 1.8 L / min, and the methane gas flow rate is 420 ml / min. S5. The surface-modified copper alloy foil obtained in S4 is forged into a die, and after heat treatment, a semi-finished probe is obtained. The probe head is then gold-plated to obtain a new type of beryllium copper alloy probe for detecting semiconductor chips. The heat treatment temperature is 530°C and the time is 150 minutes.

[0016] A novel beryllium copper alloy probe for detecting semiconductor chips includes a probe body 1 and a probe tip 2. The probe tip 2 has a notch 3, and a contact 4 is embedded inside the notch 3. A test line 5 is installed and connected to the tail of the probe body 1. The volume of the contact 4 is smaller than the volume of the probe tip 2.

[0017] Example 2 A novel beryllium copper alloy probe for inspecting semiconductor chips comprises, by weight percentage: 1.85% Be, 0.01% Zn, 0.22% Co, 0.005% Cr, 0.03% Ni+Fe, 0.003% Pb, 0.04% Ag, 0.002% Sn, 0.03% Si, 0.003% Pd, 0.02% Rh, 0.02% Ru, and 97.767% Cu; The specific processing steps are as follows: S1. Weigh out Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru and Cu according to the weight ratio; S2. The Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru in S1 are smelted with Cu, cast into a billet, and then the billet is made into copper alloy foil. S3. Spray a surface treatment agent onto the copper alloy foil surface in S2 and place it into a microwave plasma CVD device; S4. Hydrogen gas is introduced into a microwave plasma CVD apparatus and heated and held at that temperature. Then, methane gas is introduced to react, followed by the introduction of hydrogen gas to expel the methane gas. Finally, the mixture is cooled to room temperature to obtain a surface-modified copper alloy foil. The heating temperature is 930-1050°C, the holding time is 25-30 minutes, and the reaction time with methane gas is 35-45 minutes. The hydrogen gas flow rate is 1.8 L / min, and the methane gas flow rate is 420 ml / min. S5. The surface-modified copper alloy foil obtained in S4 is forged into a die, and after heat treatment, a semi-finished probe is obtained. The probe head is then gold-plated to obtain a new type of beryllium copper alloy probe for detecting semiconductor chips. The heat treatment temperature is 530°C and the time is 150 minutes.

[0018] A novel beryllium copper alloy probe for detecting semiconductor chips includes a probe body 1 and a probe tip 2. The probe tip 2 has a notch 3, and a contact 4 is embedded inside the notch 3. A test line 5 is installed and connected to the tail of the probe body 1. The volume of the contact 4 is smaller than the volume of the probe tip 2.

[0019] Example 3 A novel beryllium copper alloy probe for inspecting semiconductor chips comprises, by weight percentage: 1.90% Be, 0.015% Zn, 0.24% Co, 0.0075% Cr, 0.045% Ni+Fe, 0.0045% Pb, 0.06% Ag, 0.003% Sn, 0.045% Si, 0.0045% Pd, 0.03% Rh, 0.03% Ru, and 97.96% Cu; The specific processing steps are as follows: S1. Weigh out Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru and Cu according to the weight ratio; S2. The Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru in S1 are smelted with Cu, cast into a billet, and then the billet is made into copper alloy foil. S3. Spray a surface treatment agent onto the copper alloy foil surface in S2 and place it into a microwave plasma CVD device; S4. Hydrogen gas is introduced into a microwave plasma CVD equipment and heated and kept at a certain temperature. Then, methane gas is introduced to react. Hydrogen gas is then introduced to remove the methane gas. Finally, the temperature is cooled to room temperature to obtain a surface-modified copper alloy foil. S5. The surface-modified copper alloy foil obtained in S4 is forged into a die, and after heat treatment, a semi-finished probe is obtained. The probe head is then gold-plated to obtain a new type of beryllium copper alloy probe for detecting semiconductor chips. It also includes a probe body 1 and a probe tip 2. The probe tip 2 has a notch 3, and a contact 4 is embedded inside the notch 3. A test lead 5 is installed and connected to the tail of the probe body 1. The volume of the contact 4 is smaller than the volume of the probe tip 2. The temperature in S4 is 930-1050°C, the holding time is 25-30 minutes, and the reaction time is 35-45 minutes after introducing methane gas. In S4, the hydrogen flow rate is 1.8 L / min and the methane flow rate is 420 ml / min; The heat treatment in S5 was carried out at a temperature of 530°C for 150 minutes.

[0020] The novel beryllium copper alloy probes prepared in Examples 1-3 above were tested respectively, and the test structures are shown in Table 1: Table 1. Test Performance of Novel Beryllium Copper Alloy Probe As shown in Table 1, when the raw material ratio of the novel beryllium copper alloy probe used for detecting semiconductor chips is 1.85% Be, 0.01% Zn, 0.22% Co, 0.005% Cr, 0.03% Ni+Fe, 0.003% Pb, 0.04% Ag, 0.002% Sn, 0.03% Si, 0.003% Pd, 0.02% Rh, 0.02% Ru, and 97.767% Cu, the electrical properties of the novel beryllium copper alloy probe can be effectively enhanced, its high-temperature resistance can be effectively improved, and its resistance to electrical damage can be effectively enhanced. Therefore, Example 2 is a preferred embodiment of this scheme.

[0021] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A novel beryllium copper alloy probe for detecting semiconductor chips, characterized in that, The specific processing steps are as follows: S1. According to the weight ratio, weigh out Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru, and Cu, wherein the weight percentage of Be is 1.80-1.90%, the weight percentage of Zn is 0.005-0.015%, the weight percentage of Co is 0.20-0.24%, the weight percentage of Cr is 0.0025-0.0075%, the weight percentage of Ni+Fe is 0.015-0.045%, and the weight percentage of P is... The weight percentages of b are 0.0015-0.0045%, Ag is 0.02-0.06%, Sn is 0.001-0.003%, Si is 0.015-0.045%, Pd is 0.0015-0.0045%, Rh is 0.01-0.03%, Ru is 0.01-0.03%, and Cu is 97.2-97.96%. S2. The Be, Zn, Co, Cr, Ni+Fe, Pb, Ag, Sn, Si, Pd, Rh, Ru in S1 are smelted with Cu, cast into a billet, and then the billet is made into copper alloy foil. S3. Spray a surface treatment agent onto the copper alloy foil surface in S2 and place it into a microwave plasma chemical vapor deposition (CVD) device. S4. Hydrogen gas is introduced into a microwave plasma CVD equipment and heated and kept at a certain temperature. Then, methane gas is introduced to react. Hydrogen gas is then introduced to remove the methane gas. Finally, the temperature is cooled to room temperature to obtain a surface-modified copper alloy foil. S5. The surface-modified copper alloy foil obtained in S4 is forged and heat-treated to obtain a semi-finished probe. The probe head is then gold-plated to obtain a new type of beryllium copper alloy probe for detecting semiconductor chips.

2. The novel beryllium copper alloy probe for detecting semiconductor chips according to claim 1, characterized in that, In step S1, the weight ratio is as follows: Be 1.85%, Zn 0.01%, Co 0.22%, Cr 0.005%, Ni+Fe 0.03%, Pb 0.003%, Ag 0.04%, Sn 0.002%, Si 0.03%, Pd 0.003%, Rh 0.02%, Ru 0.02%, Cu 97.767%.

3. A novel beryllium copper alloy probe for detecting semiconductor chips according to claim 1, characterized in that, The temperature in S4 is 930-1050°C, the holding time is 25-30 minutes, and the reaction time is 35-45 minutes after introducing methane gas.

4. A novel beryllium copper alloy probe for detecting semiconductor chips according to claim 1, characterized in that, In S4, the hydrogen flow rate is 1.8 L / min and the methane flow rate is 420 ml / min.

5. A novel beryllium copper alloy probe for detecting semiconductor chips according to claim 1, characterized in that, The heat treatment in S5 was carried out at a temperature of 530°C for 150 minutes.

6. A novel beryllium copper alloy probe for detecting semiconductor chips according to claim 1, characterized in that, It also includes a probe body (1) and a probe tip (2), the probe tip (2) has a notch (3) and a contact (4) is embedded inside the notch (3), and a test line (5) is installed and connected to the tail of the probe body (1).

7. A novel beryllium copper alloy probe for detecting semiconductor chips according to claim 6, characterized in that, The volume of the contact (4) is smaller than the volume of the probe tip (2).

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