Display panel and preparation method thereof

Abstract

The application discloses a display panel and a preparation method thereof. The display panel comprises a flexible substrate, a driving circuit layer and an electrostatic conduction layer. The driving circuit layer is located on one side of the flexible substrate. The electrostatic conduction layer is located on the side of the flexible substrate away from the driving circuit layer. According to the embodiments provided in the application, the display panel provided in the application can reduce the influence of static electricity entering the display panel on thin film transistors and other devices, and improve the display effect of the display panel.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel and its manufacturing method. Background Technology

[0002] Existing electronic devices need to meet ESD (Electro-Static Discharge) resistance requirements, therefore, display panels installed in electronic devices need to undergo ESD resistance testing. Currently, during ESD resistance testing of some display panels, static electricity can enter the display panel from the sides, causing electrical displacement of devices such as thin-film transistors in the display panel, resulting in abnormal peripheral display and reduced display performance. Summary of the Invention

[0003] This application provides a display panel and its manufacturing method, which can reduce the impact of static electricity entering the display panel on devices such as thin-film transistors and improve the display effect of the display panel.

[0004] An embodiment of the first aspect of this application provides a display panel, including:

[0005] Flexible substrate;

[0006] The driving circuit layer is located on one side of the flexible substrate;

[0007] An electrostatic conductive layer is located on the side of the flexible substrate away from the driving circuit layer.

[0008] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer is a light-transmitting layer.

[0009] According to any of the foregoing embodiments of the first aspect of this application, the light transmittance of the electrostatic conductive layer is greater than 70%.

[0010] According to any of the foregoing embodiments of the first aspect of this application, the resistivity of the electrostatic conductive layer is less than or equal to 10⁻⁶. -3 Ωcm.

[0011] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer includes a plurality of conductive strips, which are interlaced to form a mesh pattern.

[0012] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer further includes conductive blocks located at the intersections of the staggered conductive strips.

[0013] According to any of the foregoing embodiments of the first aspect of this application, the conductive block is any one of circular, elliptical, or polygonal shapes.

[0014] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer includes a plurality of conductive strips, which are respectively disposed along the side edges of the display panel.

[0015] According to any of the foregoing embodiments of the first aspect of this application, the conductive strips are connected end to end in sequence to form a ring.

[0016] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer is an oxide semiconductor layer.

[0017] According to any of the foregoing embodiments of the first aspect of this application, the electrostatic conductive layer includes one or more materials selected from IGZO, IZO, ZnO, and ITGO.

[0018] According to any of the foregoing embodiments of the first aspect of this application, the flexible substrate further includes a first flexible layer, a first barrier layer, a second flexible layer, and a second barrier layer sequentially disposed along the direction of the electrostatic conductive layer toward the driving circuit layer, wherein the resistance value of the first flexible layer is greater than 10 Ω. 13 Ω, and / or the resistance value of the second flexible layer is greater than 10 Ω. 13 Ω.

[0019] According to any of the foregoing embodiments of the first aspect of this application, both the first flexible layer and the second flexible layer include an organic substrate and conductive ions distributed within the organic substrate, wherein the ion concentration of the conductive ions is less than 50 ppb.

[0020] According to any of the foregoing embodiments of the first aspect of this application, the conductive ions are metal ions and / or metal-like ions.

[0021] According to any of the foregoing embodiments of the first aspect of this application, the dielectric constant of the second flexible layer is less than the dielectric constant of the first flexible layer.

[0022] According to any of the foregoing embodiments of the first aspect of this application, the first flexible layer is yellow polyimide and the second flexible layer is colorless polyimide.

[0023] According to any of the foregoing embodiments of the first aspect of this application, the curing temperature of the first flexible layer is greater than 475°C, and / or the curing temperature of the second flexible layer is greater than 475°C.

[0024] According to any of the foregoing embodiments of the first aspect of this application, the curing temperature of the first flexible layer is greater than the curing temperature of the second flexible layer.

[0025] The second aspect of this application also provides a method for manufacturing a display panel, comprising:

[0026] Provide rigid substrates;

[0027] A release layer is formed on a rigid substrate; the release layer includes an amorphous silicon layer.

[0028] An electrostatic conductive layer is formed on the side of the release layer away from the rigid substrate;

[0029] A flexible substrate is formed on the side of the electrostatic conductive layer away from the rigid substrate;

[0030] Laser irradiation is applied to the side of the release layer away from the flexible substrate to separate the release layer from the electrostatic conductive layer.

[0031] According to any of the foregoing embodiments of the second aspect of this application, the release layer further includes a hydrogen ion implantation layer, which is located between the amorphous silicon layer and the rigid substrate.

[0032] According to any of the foregoing embodiments of the second aspect of this application, the hydrogen ion implantation layer includes silicon nitride material and / or silicon oxide material.

[0033] In the display panel provided in this application, by providing an electrostatic conductive layer on the side of the flexible substrate away from the driving circuit layer, the static electricity entering the display panel can be conducted through the electrostatic conductive layer, thereby avoiding or reducing the impact of static electricity on the electrical performance of the electrostatic conductive layer to a certain extent, thus improving the display effect of the display panel. Attached Figure Description

[0034] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals denote the same or similar features, and the drawings are not drawn to scale.

[0035] Figure 1 This is a cross-sectional structural schematic diagram of a display panel provided in the first aspect embodiment of this application;

[0036] Figure 2 This is a schematic diagram of the planar structure of an electrostatic conductive layer provided in the first aspect embodiment of this application;

[0037] Figure 3 This is a schematic diagram of the planar structure of another electrostatic conductive layer provided in the first aspect embodiment of this application;

[0038] Figure 4 This is a schematic diagram of the planar structure of another electrostatic conductive layer provided in the first aspect embodiment of this application;

[0039] Figure 5 This is a schematic diagram of the planar structure of another electrostatic conductive layer provided in the first aspect embodiment of this application;

[0040] Figure 6 This is a cross-sectional structural schematic diagram of another display panel provided in the first aspect embodiment of this application;

[0041] Figure 7This is an experimental line graph of the flexible layer provided in the first aspect embodiment of this application;

[0042] Figure 8 These are experimental data diagrams of the flexible layer provided in the first aspect embodiment of this application;

[0043] Figure 9 These are experimental data diagrams of the flexible layer provided in the first aspect embodiment of this application;

[0044] Figure 10 These are experimental data diagrams of the flexible layer provided in the first aspect embodiment of this application;

[0045] Figure 11 This is a schematic flowchart of a method for manufacturing a display panel according to a third aspect embodiment of this application.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10. Display panel; 11. Flexible substrate; 111. First flexible layer; 112. First barrier layer; 113. Second flexible layer; 114. Second barrier layer; 12. Electrostatic conduction layer; 121. Conductive strip; 122. Conductive block; 13. Driving circuit layer; 131. Thin film transistor; 14. Light-emitting device layer; 141. Light-emitting unit; 15. Buffer layer; 16. Cover plate;

[0048] 20. Support structure; 21. Substrate; 221. Amorphous silicon layer; 22. Release layer; 222. Hydrogen ion implantation layer. Detailed Implementation

[0049] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0050] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0051] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0052] Existing electronic devices need to meet ESD (Electro-Static Discharge) resistance requirements, therefore, display panels installed in electronic devices need to undergo ESD resistance testing. Currently, during ESD resistance testing of some display panels, static electricity can enter the display panel from the sides, causing electrical shifts in conductive devices such as thin-film transistors (TFTs), resulting in abnormal peripheral display and reduced display quality. AMOLED products, for example, experience a greenish tinge at the screen edges due to static electricity generated by friction during use. After electrostatic discharge (ESD) testing, the greenish tinge reappeared. Mechanism analysis indicates that static electricity enters from the sides of the screen, accumulates on the back of the TFTs, and causes electrical shifts in the TFT devices.

[0053] Please refer to Figure 1 and Figure 2 To address the aforementioned issues, an embodiment of the first aspect of this application provides a display panel 10, which includes a flexible substrate 11, a driving circuit layer 13, and an electrostatic conduction layer 12. The driving circuit layer 13 is located on one side of the flexible substrate 11, and the electrostatic conduction layer 12 is located on the side of the flexible substrate 11 away from the driving circuit layer 13.

[0054] The flexible substrate 11 may include an organic layer, such as polyimide. The display panel may also include a light-emitting device layer 14, which is located on the side of the driving circuit layer 13 away from the flexible substrate 11. The light-emitting device layer 14 may include a plurality of light-emitting units 141; the driving circuit layer 13 is electrically connected to the light-emitting units 141 to control the light-emitting units 141 to emit light. Exemplarily, in this embodiment, an organic light-emitting diode (OLED) may be selected to fabricate the various light-emitting units 141. Alternatively, the light-emitting units 141 may be configured as micro-light-emitting diodes (Micro-LEDs) or quantum light-emitting diodes (QLEDs). The driving circuit layer 13 may include a plurality of thin-film transistors 131, which cooperate to control the light-emitting units 141 to emit light. The display panel 10 of this embodiment may also include a buffer layer 15, a cover plate 16, an optical adhesive, a polarizer, an encapsulation layer, a touch layer, etc., which will not be described in detail here.

[0055] At least a portion of the electrostatic conductive layer 12 is made of conductive material. When static electricity enters the display panel 10 through the side of the display panel 10, the static electricity can be conducted through the electrostatic conductive layer 12, thus preventing or reducing the entry of static electricity into the driving circuit layer 13 to avoid or reduce the impact of static electricity on the electrical performance of the driving circuit layer 13. For example, the electrostatic conductive layer 12 can prevent or reduce the entry of static electricity into the back channel of the thin-film transistor 131, avoiding or reducing the impact of static electricity causing electrical offset of the thin-film transistor 131. Those skilled in the art can electrically connect the electrostatic conductive layer 12 to different conductive structures according to the application scenario of the display panel, so as to conduct the static electricity within the electrostatic conductive layer 12 to the outside. For example, if the display panel 10 is installed in a mobile phone, the electrostatic conductive layer 12 can be electrically connected to the metal frame of the mobile phone. For example, if the display panel 10 is installed in a monitor, the electrostatic conductive layer 12 can be electrically connected to the metal backplate of the monitor.

[0056] In the display panel 10 provided in this application, by providing an electrostatic conduction layer 12 on the side of the flexible substrate 12 away from the driving circuit layer 13, the static electricity entering the display panel 10 can be conducted through the electrostatic conduction layer 12, thereby avoiding or reducing the impact of static electricity on the electrical performance of the electrostatic conduction layer 12 to a certain extent, and thus improving the display effect of the display panel 10.

[0057] During the fabrication of the display panel 10, multiple stacked layer structures need to be fabricated sequentially. The accuracy of the alignment between the processing equipment and the display panel 10 will affect the quality of the display panel 10. For example, in the process of fabricating the light-emitting unit 141 by evaporation through a mask, it is necessary to ensure that the evaporation opening of the mask is accurately aligned with the pixel opening so that the evaporation material is precisely attached to the pixel opening. In one embodiment, the electrostatic conductive layer is a light-transmitting layer. In this application, by providing a light-transmitting electrostatic conductive layer 12, the alignment marks on the driving circuit layer 13 can be observed from the side of the electrostatic conductive layer 12 away from the flexible substrate 11. This facilitates the alignment of the processing equipment with each layer structure in the display panel 10 during the processing, making the processed layer structures more precise and improving the consistency of the display panel 10.

[0058] Those skilled in the art can select appropriate materials and thicknesses for the electrostatic conductive layer 12 as needed, ensuring that the transmittance of the electrostatic conductive layer 12 is greater than 70% to meet processing alignment requirements. In some embodiments, the transmittance of the electrostatic conductive layer 12 for visible light at 550 nm is >70%.

[0059] In some embodiments, the resistivity of the electrostatic conductive layer 12 is less than or equal to 10. -3 Ωcm. The electrostatic conductive layer 12 is configured to have a low resistivity, making it easier for static electricity to enter the electrostatic conductive layer 12 compared to other layers in the display panel. The electrostatic conductive layer 12 can dissipate the energy of static electricity, preventing or reducing its entry into other layers. Optionally, the resistivity of the electrostatic conductive layer 12 can be set to be lower than that of other layers. For example, the resistivity of the electrostatic conductive layer 12 may be lower than the resistance of the light-emitting device layer 14, and the resistivity of the electrostatic conductive layer 12 may be lower than that of the polarizer.

[0060] In some embodiments, the electrostatic conductive layer 12 is continuously disposed across its entire surface. See also... Figure 2 In other embodiments, the electrostatic conductive layer 12 includes a plurality of conductive strips 121, which are interlaced to form a mesh pattern (i.e., a grid-like structure). The interlaced mesh pattern of the conductive strips 121 allows them to cover the side of the flexible substrate 12 away from the driving circuit layer 13, thereby improving the electrostatic protection effect of the electrostatic conductive layer 12 on the driving circuit layer 13. The multiple conductive strips 121 can be interlaced in pairs, and the intersection angle between two interlaced conductive strips 121 can be from 0° to 180°, for example, 90°. This intersection angle is not limited in this application.

[0061] Please see Figure 3 and Figure 4In some embodiments, the electrostatic conductive layer 12 further includes conductive blocks 122 located at the intersections of the intersecting conductive strips 121. Compared to the conductive strips 121, the conductive blocks 122 have a larger area and volume, allowing them to dissipate more electrostatic energy. By placing the conductive blocks 122 at the intersections, they can conduct static electricity between the multiple conductive strips 121, accelerating the dissipation of electrostatic energy in the electrostatic conductive layer 12.

[0062] Optionally, the conductive block 122 can be any of a circle, an ellipse, or a polygon. A polygon may include one or more rectangles and rhombuses. When a photosensitive element is mounted in a portion of the display panel 10, the conductive block 122 can be shaped with an arc-shaped outer edge to reduce diffraction phenomena caused by the light beam entering the photosensitive element through the display panel 10. Of course, those skilled in the art can choose a suitable shape for the conductive block 122 as needed.

[0063] Please see Figure 5 In some embodiments, the electrostatic conductive layer 12 includes a plurality of conductive strips 121, which are respectively disposed along the side edge of the display panel 10. The length of a single conductive strip 121, the number of conductive strips 121 extending along the same side edge, and the spacing between adjacent conductive strips 121 are not limited. Obviously, the more conductive strips 121 there are, the better the electrostatic conductive layer 12 dissipates static electricity.

[0064] Optionally, the conductive strips 121 are connected end to end to form a ring. The conductive strips 121 form a ring structure, rather than being arranged intermittently around the periphery of the display panel, thereby preventing static electricity from entering the display panel 10 through the gap between two conductive strips 121 and interfering with the thin-film transistors 131 in the driving circuit layer 13. Multiple conductive strips 121 can form only one ring structure on one side of the driving circuit layer 13, or multiple sequentially nested ring structures can be formed on one side of the driving circuit layer 13.

[0065] In some embodiments, the electrostatic conductive layer 12 is an oxide semiconductor layer. Optionally, the oxide is one or more of ITO, IGZO, IZO, ZnO, and ITGO, so that the electrostatic conductive layer 12 has both electrical conductivity and good light transmittance.

[0066] Please see Figure 6The flexible substrate 11 may include a single-layer structure or a multi-layer structure. In some embodiments, the flexible substrate 11 may include a first flexible layer 111. In some embodiments, the flexible substrate 11 may include a first flexible layer 111, a first barrier layer 112, a second flexible layer 113, and a second barrier layer 114 sequentially disposed along the electrostatic conductive layer 12 toward the driving circuit layer 13. Optionally, the resistance value of the first flexible layer 111 is greater than 10 ohms. 13 Ω. Optionally, the resistance of the second flexible layer 113 is greater than 10 Ω. 13 Ω.

[0067] The first flexible layer 111 and the second flexible layer 113 can be made of the same or different materials. The first flexible layer 111 and the second flexible layer 113 can be made of flexible materials such as plastics, for example, polyimide. The first barrier layer 112 can be disposed on the first flexible layer 111, and the second barrier layer 114 can be disposed on the second flexible layer 113. Both the first barrier layer 112 and the second barrier layer 114 can prevent the diffusion of impurity ions and prevent water vapor penetration. The first barrier layer 112 and the second barrier layer 114 can also be made of the same or different materials. The materials used to prepare the first barrier layer 112 and the second barrier layer 114 include, but are not limited to, silicon nitride, silicon oxide, or silicon oxynitride.

[0068] When external static electricity enters the display panel, it can accumulate in the first flexible layer 111 and / or the second flexible layer 113. Parasitic capacitance may form between the first flexible layer 111 and the driving circuit layer 13, or between the second flexible layer 113 and the driving circuit layer 13. The presence of this parasitic capacitance can affect the electrical performance of the thin-film transistors 131 in the driving circuit layer 13, for example, affecting the switching speed of the thin-film transistors 131, causing image retention on the display panel. Therefore, by making the resistance value of the first flexible layer 111 and / or the second flexible layer 113 greater than 10 ohms... 13 Ω, reducing the charge within the first flexible layer 111 and / or the second flexible layer 113, reducing the impact of the charge within the first flexible layer 111 and / or the second flexible layer 113 on the thin-film transistor 131 within the driving circuit layer 13, and reducing image retention. Optionally, the resistance value of the first flexible layer 111 is greater than 10Ω. 14 Ω, and / or, the resistance value of the second flexible layer 113 is greater than 10 Ω. 14 Ω.

[0069] In one embodiment, the first flexible layer 111 includes an organic substrate and conductive ions distributed within the organic substrate, wherein the ion concentration of the conductive ions is less than 50 ppb. Optionally, the ion concentration of the conductive ions is less than 30 ppb.

[0070] In one embodiment, the second flexible layer 113 includes an organic substrate and conductive ions distributed within the organic substrate, wherein the ion concentration of the conductive ions is less than 50 ppb. Optionally, the ion concentration of the conductive ions is less than 30 ppb.

[0071] Due to limitations in the processing technology, the first flexible layer 111 and the second flexible layer 113 obtained by the processing typically contain conductive ions. Those skilled in the art can limit the ion concentration of conductive ions to less than 50 ppb by optimizing the processing technology and materials, thereby increasing the resistance value of the first flexible layer 111 and / or the second flexible layer 113.

[0072] In one embodiment, the conductive ions are metal ions and / or metal-like ions. The elemental substances corresponding to the metal ions include, but are not limited to, at least two of the following: Li, Be, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Co, Ni, Cu, Ti, V, Zn, Ga, Sr, Cd, Sn, Sb, Ba, Ti, Pb, and Bi. The elemental substances corresponding to the metal-like ions include, but are not limited to, As.

[0073] When external static electricity enters the display panel, it can accumulate in the first flexible layer 111 and / or the second flexible layer 113. This static accumulation can induce back-channel carriers in the thin-film transistor 131. Optionally, the dielectric constant k of the first flexible layer 111 is less than 4. Optionally, the dielectric constant k of the second flexible layer 113 is less than 4. By limiting the first flexible layer 111 and / or the second flexible layer 113 to have a small dielectric constant k, the back-channel carriers induced by static accumulation in the thin-film transistor 131 are reduced, thereby improving the brightness variation of the display panel caused by static electricity.

[0074] Please see Figure 7 The x-axis represents the dielectric constant k, and the y-axis represents the jagged image rejection factor (JNDOs). The lines in the graph represent the fitted lines between the dielectric constant and the jagged image rejection factor in display panels using flexible layers with different dielectric constants. Figure 7 As can be seen, the dielectric constant of the flexible layer and the image retention evaluation value are positively correlated. The higher the dielectric constant of the flexible layer, the larger the image retention evaluation value, and the more obvious the image retention phenomenon of the display panel.

[0075] Please see Figure 6 In one embodiment, the dielectric constant of the second flexible layer 113 is less than the dielectric constant of the first flexible layer 111.

[0076] The second flexible layer 113 is closer to the driving array layer than the first flexible layer 111. The charge in the second flexible layer 113 has a greater impact on the driving array layer 13 than the charge in the first flexible layer 111. By setting the dielectric constant of the second flexible layer 113 to be smaller than that of the first flexible layer 111, the charge in the second flexible layer 113 is smaller, reducing the capacitance effect that induces carriers in the channel of the thin-film transistor 131, and reducing the electrical shift of the thin-film transistor 131 under the influence of the charge stored in the second flexible layer 113. Optionally, the dielectric constant k of the second flexible layer 113 is less than 3.

[0077] In one embodiment, the first flexible layer 111 is yellow polyimide, and the second flexible layer 113 is colorless polyimide.

[0078] Compared to yellow polyimide, colorless polyimide has a lower dielectric constant. The transmittance of yellow polyimide is lower than that of colorless polyimide. Optionally, for light with a wavelength of 550 nm, the transmittance of the first flexible layer 111 (which is yellow polyimide) is greater than 70%, and the transmittance of the second flexible layer 113 (which is colorless polyimide) is greater than 80%.

[0079] In some embodiments, the curing temperature of the first flexible layer 111 is greater than 475°C, and / or the curing temperature of the second flexible layer 113 is greater than 475°C.

[0080] Please see Figure 8 The horizontal axis represents voltage, and the vertical axis represents current. Curve L1 is the voltage and current variation curve of the flexible layer prepared with polyimide at a curing temperature of 450℃, and curve L2 is the voltage and current variation curve of the flexible layer prepared with polyimide at a curing temperature of 475℃. It can be seen from the figure that when the flexible layer is prepared with polyimide, the higher the curing temperature of the flexible layer, the greater the resistance value of the flexible layer.

[0081] Please see Figure 9 In Experiment 1, the display panel was prepared using polyimide with a curing temperature of 450℃ to obtain the first flexible layer 111 and the second flexible layer 113. In Experiment 2, the display panel was prepared using polyimide with a curing temperature of 475℃ to obtain the first flexible layer 111 and the second flexible layer 113. As can be seen from the figure, the flexible layer in Experiment 2 has a higher resistance value compared to Experiment 1.

[0082] Therefore, using polyimide with a higher curing temperature to prepare the flexible layer can improve its resistivity. Optionally, the curing temperature of the flexible layer is greater than 500°C.

[0083] In some embodiments, the curing temperature of the first flexible layer 111 is greater than the curing temperature of the second flexible layer 113.

[0084] Compared to the second flexible layer 113, the first flexible layer 111 is prepared at a higher curing temperature, so the first flexible layer 111 has higher density. The water vapor permeability of the first flexible layer 111 is lower than that of the second flexible layer 113. The water and gas blocking ability of the first flexible layer 111 is better than that of the second flexible layer 113, thereby improving the ability of the flexible substrate 11 to block water vapor.

[0085] In some embodiments, the first flexible layer 111 is yellow polyimide, and the second flexible layer 113 is colorless polyimide. The curing temperature of the colorless polyimide is lower than that of the yellow polyimide. Therefore, the curing temperature of the first flexible layer 111 is higher than that of the second flexible layer 113. The water vapor transmission rate of the first flexible layer 111 is lower than that of the second flexible layer 113. The water and gas barrier capabilities of the first flexible layer 111 are better than those of the second flexible layer 113. Since the first flexible layer 111 is prepared at a higher curing temperature than the second flexible layer 113, the first barrier layer 112 can be prepared on the first flexible layer 111 at a higher temperature than the second barrier layer 114 prepared on the second flexible layer 113. This results in the first barrier layer 112 having better density than the second barrier layer 114, fewer intrafilm defects in the first barrier layer 112 than in the second barrier layer 114, lower water vapor permeability in the first barrier layer 112 than in the second barrier layer 114, and better water and gas blocking capabilities in the first barrier layer 112 than in the second barrier layer 114, thereby improving the water vapor barrier capability of the flexible substrate 11.

[0086] Please see Figure 10 The horizontal axis represents the test potential, and the vertical axis represents the display brightness. The dashed line represents the display brightness variation line of the embodiment provided in this application, in which the first flexible layer 111 is yellow polyimide and the second flexible layer 113 is colorless polyimide; the solid line represents the display brightness variation line of the comparative example, in which both the first flexible layer 111 and the second flexible layer 113 are yellow polyimide. From Figure 10 As can be seen, compared with the comparative example, the embodiments provided in this application show a smaller brightness variation and a smaller electrical offset of the thin-film transistor.

[0087] This application also provides a method for manufacturing a display panel. This method can be used to fabricate the display panel provided in the above embodiments. The method for manufacturing the display panel includes:

[0088] S101 provides a rigid substrate;

[0089] S102, a release layer is formed on a rigid substrate; wherein the release layer includes an amorphous silicon layer.

[0090] S103, an electrostatic conductive layer is formed on the side of the release layer away from the rigid substrate;

[0091] S104, a flexible substrate is formed on the side of the electrostatic conductive layer away from the rigid substrate;

[0092] S105, laser irradiation is performed on the side of the release layer away from the flexible substrate to separate the release layer from the electrostatic conductive layer.

[0093] Please see Figure 11 The rigid substrate 21 is made of a material with a certain degree of hardness, such as glass. Because the rigid substrate 21 has a certain degree of hardness, the materials used to prepare the release layer 22, the electrostatic conductive layer 12, the flexible substrate 11, and the driving circuit layer 13 can be transported along with the rigid substrate 21. Especially when the display panel 10 is a flexible display panel, each layer structure has a certain degree of flexibility. By placing the flexible display panel on one side of the rigid substrate 21, it is beneficial to transport the flexible display panel.

[0094] The amorphous silicon layer 221 can undergo a hydrogen explosion under the action of a laser. In S105, the amorphous silicon layer 221 can block the laser and absorb the incident laser beam, so that the incident beam will not affect the electrostatic conductive layer 12, reducing or avoiding the influence of the incident beam on the electrostatic conductive layer 12. The amorphous silicon layer 221 is destroyed by the hydrogen explosion phenomenon under the irradiation of the beam, thereby separating the electrostatic conductive layer 12 from the rigid substrate 21.

[0095] In the preparation method provided in this application, by providing an electrostatic conduction layer 12 on the side of the flexible substrate 11 away from the driving circuit layer 13, the static electricity entering the display panel 10 can be conducted through the electrostatic conduction layer 12, which to a certain extent avoids or reduces the impact of static electricity on the electrical performance of the device, thereby improving the display effect of the display panel 10.

[0096] By setting a light-transmitting electrostatic conductive layer 12, the processing marks on the driving circuit layer 13 can be observed through the electrostatic conductive layer 12, which is beneficial to achieve the alignment of the processing equipment and the various layers of the display panel 10 during the processing, and improve the consistency of the display panel 10. By setting an amorphous silicon layer 221 and utilizing the hydrogen explosion phenomenon that occurs when the amorphous silicon layer 221 is irradiated by a light beam, the electrostatic conductive layer 12 and the rigid substrate 21 can be separated.

[0097] In some embodiments, S105 includes:

[0098] The side of the release layer furthest from the flexible substrate is irradiated with ultraviolet light.

[0099] The ultraviolet light can be a beam with a wavelength of less than 400 nm. Optionally, the wavelength of the ultraviolet light is 308 nm or 343 nm. The rigid substrate 21 is irradiated with ultraviolet light from the side of the rigid substrate 21 away from the display panel 10 to accelerate the dissociation speed of the release layer 22 and prevent the ultraviolet light from irradiating onto the display panel.

[0100] The release layer 22 can be configured to have a lower transmittance under ultraviolet light than the electrostatic conductive layer 12 under ultraviolet light. This allows the release layer 22 to block ultraviolet light irradiating the display panel 10, preventing it from penetrating the layer structure on the side of the release layer 22 away from the rigid substrate 21 and affecting the physicochemical properties of each layer in the display panel 10, such as the properties of the driving circuit layer 13. By configuring the release layer 22 to dissociate under ultraviolet light, the release layer 22 can dissociate under ultraviolet light irradiation, thereby separating the display panel 10 from the rigid substrate 21. The resulting display panel 10 can then be used for further processing, such as bonding it to a flexible support layer or assembling it with a housing to form electronic devices.

[0101] In order to ensure that the release layer 22 is relatively completely destroyed during the separation of the electrostatic conductive layer 12 and the rigid substrate 21, and to minimize the residue of the release layer 22 adhering to the electrostatic conductive layer 12, while maximizing the absorption of ultraviolet light by the release layer 22 to reduce or avoid the impact of the irradiated ultraviolet light on the layer structure of the release layer 22 away from the rigid substrate 21, the transmittance of the release layer 22 needs to be controlled accordingly. In this embodiment, the transmittance of the release layer 22 under 400nm ultraviolet light is less than 5%. Those skilled in the art can adjust the thickness of the release layer 22 and select different materials to prepare the release layer 22 as needed, so that the transmittance of the prepared release layer 22 under ultraviolet light is less than 5%.

[0102] In one embodiment, the release layer 22 further includes a hydrogen ion implantation layer 222, which is located between the amorphous silicon layer 221 and the rigid substrate 21.

[0103] The hydrogen ion implantation layer 222 includes hydrogen ions. Under the action of ultraviolet light, the hydrogen ions in the hydrogen ion implantation layer 222 can migrate to the amorphous silicon layer 221, so that the hydrogen ion implantation layer 222 can provide hydrogen ions to the amorphous silicon layer 221, thereby increasing the number of hydrogen explosion reactions in the amorphous silicon layer 221 under ultraviolet light irradiation, increasing the probability that the release layer 22 is destroyed relatively intact, and helping to release smoothly under low release energy, avoiding damage to the array film layer.

[0104] In some embodiments, under ultraviolet light, the hydrogen ions in the hydrogen ion implantation layer 222 can undergo hydrogen explosion. The hydrogen ion implantation layer 222 can be made of silicon nitride and / or silicon oxide. The hydrogen ion implantation layer 222, prepared from silicon nitride and / or silicon oxide materials, contains hydrogen ions, so that under ultraviolet light, not only the amorphous silicon layer 221 but also the hydrogen ion implantation layer 222 will undergo hydrogen explosion, thereby increasing the probability of successful separation between the rigid substrate 21 and the display panel 10. In the hydrogen ion implantation layer 222 prepared using silicon nitride and silicon oxide materials, the silicon nitride and silicon oxide materials can be mixed and distributed, or they can be prepared as silicon nitride and silicon oxide layers respectively. The silicon nitride and silicon oxide layers can be stacked along the thickness direction of the display panel or along a direction perpendicular to the thickness direction. Optionally, the hydrogen ion implantation layer 222 is a silicon nitride layer, which can provide more hydrogen ions to the amorphous silicon layer 221 compared to the silicon oxide layer.

[0105] In some embodiments, prior to S105, the method further includes:

[0106] A driving circuit layer is formed on the side of the flexible substrate away from the rigid substrate;

[0107] A light-emitting device layer is formed on the side of the driving circuit layer away from the rigid substrate.

[0108] The electrostatic conductive layer and the driving circuit layer can be prepared using processes such as vapor deposition or vapor phase deposition. For example, the electrostatic conductive layer, the first flexible layer, the first barrier layer, the second flexible layer, the second barrier layer, the driving circuit layer, the light-emitting device layer, the thin-film encapsulation layer, and the touch layer can be formed sequentially. The first and second barrier layers can be inorganic layers. After peeling off the rigid substrate, the display panel and the cover plate can be bonded together.

[0109] Please see Figure 11 a. In this embodiment, a release layer 22 is formed on the rigid substrate 21. Please refer to [link / reference]. Figure 11 b. On the side of the release layer 22 away from the rigid substrate 21, a flexible substrate 11, an electrostatic conductive layer 12, a driving circuit layer, and a light-emitting device layer are sequentially formed. Therefore, the release layer 22 is connected to the electrostatic conductive layer 12. Please refer to [link / reference]. Figure 11 c. Ultraviolet light is irradiated onto the rigid substrate 21 along the thickness direction of the display panel 10. The release layer 22 blocks the ultraviolet light and dissociates, causing the display panel 10 and the rigid substrate 21 to separate, thereby obtaining… Figure 11 Display panel 10 as shown in d.

[0110] The embodiments described above are not exhaustive and do not limit the invention to specific examples. Clearly, many modifications and variations can be made based on the above description. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A display panel, characterized in that, The display panel includes: Flexible substrate; A driving circuit layer is located on one side of the flexible substrate; An electrostatic conductive layer is located on the side of the flexible substrate away from the driving circuit layer; The flexible substrate further includes a first flexible layer, a first barrier layer, a second flexible layer, and a second barrier layer sequentially disposed along the electrostatic conductive layer toward the driving circuit layer. The electrostatic conductive layer includes a plurality of first conductive strips, which are respectively disposed along the side edge of the display panel and are sequentially connected end to end to form a ring.

2. The display panel according to claim 1, characterized in that, The electrostatic conductive layer is a light-transmitting layer.

3. The display panel according to claim 2, characterized in that, The driving circuit layer has alignment marks, and the electrostatic conductive layer is a light-transmitting layer, through which the alignment marks are exposed.

4. The display panel according to claim 2, characterized in that, The transmittance of the electrostatic conductive layer is greater than 70%; and / or, the resistivity of the electrostatic conductive layer is less than or equal to 10 Ω·cm. -3 Ωcm.

5. The display panel according to claim 4, characterized in that, The display panel further includes a light-emitting device layer, which is disposed on the side of the driving circuit layer away from the flexible substrate, and the resistivity of the electrostatic conductive layer is less than the resistivity of the light-emitting device layer; And / or, the display panel further includes a polarizer disposed on the side of the driving circuit layer opposite to the flexible substrate, wherein the resistivity of the electrostatic conductive layer is less than the resistivity of the polarizer.

6. The display panel according to claim 1, characterized in that, The electrostatic conductive layer is used for electrical connection with an external conductive structure.

7. The display panel according to claim 1, characterized in that, The electrostatic conductive layer includes a plurality of second conductive strips, which are interlaced to form a mesh pattern.

8. The display panel according to claim 7, characterized in that, The electrostatic conductive layer further includes conductive blocks located at the intersections of the intersecting second conductive strips.

9. The display panel according to claim 8, characterized in that, The conductive block can be any one of a circle, an ellipse, or a polygon.

10. The display panel according to claim 1, characterized in that, The electrostatic conductive layer is an oxide semiconductor layer.

11. The display panel according to claim 10, characterized in that, The electrostatic conductive layer comprises one or more materials selected from IGZO, IZO, ZnO, and ITGO.

12. The display panel according to claim 1, characterized in that, The resistance of the first flexible layer is greater than 10. 13 Ω, and / or the resistance value of the second flexible layer is greater than 10 Ω. 13 Ω.

13. The display panel according to claim 12, characterized in that, Both the first flexible layer and the second flexible layer include an organic substrate and conductive ions distributed within the organic substrate, wherein the concentration of the conductive ions is less than 50 ppb.

14. The display panel according to claim 13, characterized in that, The conductive ions are metal ions and / or metal-like ions.

15. The display panel according to claim 14, characterized in that, The elemental substances corresponding to the metal ions include at least two of the following: Li, Be, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Co, Ni, Cu, Ti, V, Zn, Ga, Sr, Cd, Sn, Sb, Ba, Ti, Pb, and Bi. And / or, the elemental substance corresponding to the metal-like ion includes As.

16. The display panel according to claim 6, characterized in that, The dielectric constant of the second flexible layer is less than that of the first flexible layer.

17. The display panel according to claim 16, characterized in that, The dielectric constant k of the first flexible layer is less than 4; And / or, the dielectric constant k of the second flexible layer is less than 4.

18. The display panel according to claim 1, characterized in that, The first flexible layer is yellow polyimide, and the second flexible layer is colorless polyimide.

19. The display panel according to claim 18, characterized in that, The light transmittance of the first flexible layer is less than that of the second flexible layer.

20. The display panel according to claim 19, characterized in that, The light transmittance of the first flexible layer is greater than 70%; And / or, the light transmittance of the second flexible layer is greater than 80%.

21. The display panel according to claim 1, characterized in that, The curing temperature of the first flexible layer is greater than 475°C, and / or the curing temperature of the second flexible layer is greater than 475°C.

22. The display panel according to claim 1, characterized in that, The curing temperature of the first flexible layer is greater than that of the second flexible layer.

23. The display panel according to claim 22, characterized in that, The water vapor transmission rate of the first barrier layer is less than that of the second barrier layer.

24. A method for manufacturing a display panel according to any one of claims 1-23, characterized in that, include: Provide rigid substrates; A release layer is formed on the rigid substrate; the release layer includes an amorphous silicon layer. An electrostatic conductive layer is formed on the side of the release layer away from the rigid substrate; A flexible substrate is formed on the side of the electrostatic conductive layer away from the rigid substrate; The side of the release layer away from the flexible substrate is irradiated with a laser to separate the release layer from the electrostatic conductive layer; The step of laser irradiating the side of the release layer away from the flexible substrate includes: The side of the release layer away from the flexible substrate is irradiated with ultraviolet light; The transmittance of the release layer under ultraviolet light is less than that of the electrostatic conductive layer under ultraviolet light.

25. The preparation method according to claim 24, characterized in that, The release layer further includes a hydrogen ion implantation layer, which is located between the amorphous silicon layer and the rigid substrate.

26. The preparation method according to claim 25, characterized in that, The hydrogen ion implantation layer comprises silicon nitride and / or silicon oxide materials.

27. The preparation method according to claim 24, characterized in that, The release layer has a transmittance of less than 5% under 400nm ultraviolet light.

28. The preparation method according to claim 24, characterized in that, Before laser irradiating the side of the release layer away from the flexible substrate to separate the release layer from the electrostatic conductive layer, the procedure includes: A driving circuit layer is formed on the side of the flexible substrate away from the rigid substrate; A light-emitting device layer is formed on the side of the driving circuit layer away from the rigid substrate.

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