一种新型三维碳化硅器件结构及制备方法
The fabrication of three-dimensional silicon carbide devices by laser etching and deposition processes solves the etching problem caused by the hardness of silicon carbide, realizes efficient and simple three-dimensional silicon carbide device manufacturing, improves the etching rate and simplifies the removal of by-products.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DALIAN UNIV OF TECH
- Filing Date
- 2022-11-17
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies are insufficient for efficiently fabricating three-dimensional silicon carbide devices. In particular, due to the high hardness of silicon carbide, the etching problem has not been effectively solved, resulting in low efficiency of traditional methods and difficulty in removing byproducts.
Laser etching technology is used to etch trenches with controllable depth and width on both sides of silicon carbide material. Schottky contact electrodes, ohmic contact electrodes and silicon dioxide protective layers are then fabricated by deposition. Byproducts are removed by ultrasonic cleaning, forming a novel three-dimensional silicon carbide device structure.
This method enables efficient and convenient fabrication of three-dimensional silicon carbide devices, solves the etching problem, improves the etching rate, simplifies the removal process of byproducts, and ensures the integrity of unetched areas.
Smart Images
Figure CN115799347B_ABST