Semiconductor laser and preparation method and application thereof

Abstract

The application discloses a semiconductor laser and a preparation method and application thereof, and relates to the technical field of semiconductor lasers.The semiconductor laser comprises the following structures: a conductive layer, an electron transport layer, a light absorption material layer, a hole transport layer, a first metal electrode layer, a laser epitaxial material layer, a laser insulating layer, a second metal electrode layer and an electrode metal connecting line.The solar cell integrated in the semiconductor laser can supply power to the semiconductor laser, energy is fully utilized, the integration degree of the device is improved, and meanwhile, the overall device of the semiconductor laser has certain flexibility, and can meet the deformation requirements of some specific application environments.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser technology, and in particular to a semiconductor laser, its fabrication method, and its applications. Background Technology

[0002] Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as their active medium. Semiconductor diode lasers are among the most practical and important types of lasers. They are small in size, have long lifespans, and can be pumped using simple injection current. Their operating voltage and current are compatible with integrated circuits, allowing for monolithic integration. Furthermore, they can be directly current-modulated at frequencies up to GHz to obtain high-speed modulated laser output. Due to these advantages, semiconductor diode lasers have found wide applications in laser communication, optical storage, optical gyroscopes, laser printing, ranging, and radar.

[0003] Currently, semiconductor lasers generally require an external power supply to operate. With the increasing prevalence of applications, the requirements for driving power supplies are also diversifying, which impacts the integration of the devices. Some semiconductor lasers address this issue by integrating batteries, but such lasers have low integration density and poor flexibility.

[0004] Therefore, there is an urgent need for a new type of semiconductor laser to solve the above problems. Summary of the Invention

[0005] The first technical problem to be solved by this invention is:

[0006] A semiconductor laser is provided.

[0007] The second technical problem to be solved by this invention is:

[0008] A method for fabricating the semiconductor laser is provided.

[0009] The third technical problem to be solved by this invention is:

[0010] Applications of the semiconductor laser.

[0011] To solve the first technical problem, the technical solution adopted by the present invention is as follows:

[0012] A semiconductor laser includes the following structure:

[0013] Conductive layer;

[0014] An electron transport layer is provided on the upper surface of the conductive layer;

[0015] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0016] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0017] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0018] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0019] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0020] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0021] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0022] According to embodiments of the present invention, one of the technical solutions has at least one of the following advantages or beneficial effects:

[0023] 1. This invention integrates a conductive layer, an electron transport layer, a light-absorbing material layer, a hole transport layer, and a first metal electrode layer into a laser. These functional layers constitute an integrated solar cell in the semiconductor laser of this invention. Under sunlight, when the light-absorbing material layer absorbs solar energy, electrons are separated from the material and directionally moved to the electron transport layer to form a current. At this time, the electron transport layer acts as the negative electrode of the battery, and its function is to transport the electrons separated from the light-absorbing layer. The aforementioned functional layers convert light energy into electrical energy to complete the power supply.

[0024] 2. In the semiconductor laser of the present invention, the conductive layer and the second metal electrode layer are connected by an electrode metal connection wire, so that the integrated solar cell in the semiconductor laser of the present invention can power the laser under sufficient sunlight.

[0025] 3. The semiconductor laser of the present invention integrates a flexible semiconductor laser chip with a perovskite solar cell to form an integrated flexible device. The solar cell integrated in the semiconductor laser of the present invention can power the semiconductor laser, realizing full utilization of energy and improving the integration of the device. At the same time, the overall semiconductor laser device of the present invention has a certain degree of flexibility, which can meet the deformation requirements of some specific application environments.

[0026] According to one embodiment of the present invention, in a semiconductor laser, the conductive layer, electron transport layer, light-absorbing material layer, hole transport layer, and first metal electrode layer constitute an integrated solar cell. The laser epitaxial material layer, laser epitaxial material layer, laser insulating layer, and second metal electrode layer constitute an integrated laser device. The integrated solar cell and the integrated laser device can be a top-bottom integrated structure, a front-back integrated structure, or an integrated structure of any shape according to actual needs.

[0027] According to one embodiment of the present invention, the conductive layer comprises at least one of an indium tin oxide layer and a silver nanowire layer.

[0028] According to one embodiment of the present invention, the thickness of the first metal electrode layer is 5-20 μm.

[0029] According to one embodiment of the present invention, the first metal electrode layer includes at least one of Ag layer, Au layer, Ni layer, Ge layer and Cu layer.

[0030] According to one embodiment of the present invention, the laser insulating layer includes at least one of a SiO2 layer and a Si3N4 layer.

[0031] According to one embodiment of the present invention, the thickness of the laser insulating layer is 100 nm.

[0032] According to one embodiment of the present invention, the number of the second metal electrode layers is greater than or equal to 2, and the second metal electrode layers do not contact each other.

[0033] To solve the second technical problem, the technical solution adopted by the present invention is as follows:

[0034] A method for fabricating the semiconductor laser includes the following steps:

[0035] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0036] According to one embodiment of the present invention, the preparation of the hole transport layer includes the following steps: mixing copper halide and a solution containing rare metals, and heating to obtain the hole transport layer.

[0037] According to one embodiment of the present invention, the preparation of the light-absorbing material layer includes the following steps: mixing lead iodide and methyl ammonium iodide in an organic solvent, and heating to obtain the light-absorbing material layer.

[0038] Another aspect of the present invention relates to the application of the semiconductor laser in laser communication. This includes the semiconductor laser described in the first aspect embodiment above. Since this application employs all the technical solutions of the aforementioned semiconductor laser, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments.

[0039] Another aspect of the present invention relates to the application of the semiconductor laser in optical storage. This includes the semiconductor laser described in the first aspect embodiment above. Since this application employs all the technical solutions of the described semiconductor laser, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments.

[0040] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. Attached Figure Description

[0041] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0042] Figure 1 This is a schematic diagram of the semiconductor laser in Example 1.

[0043] Figure 2 This is a flowchart of the semiconductor laser fabrication method in Example 1.

[0044] Figure label:

[0045] 100 - Second metal electrode layer, 200 - Laser epitaxial material layer, 300 - Laser insulating layer, 400 - First metal electrode layer, 500 - Hole transport layer, 600 - Light absorbing material layer, 700 - Electron transport layer, 800 - Conductive layer, 900 - Electrode metal connecting wire. Detailed Implementation

[0046] Embodiments of the present invention are described in detail below. Examples of the above embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0047] In the description of this invention, the use of terms such as "first," "second," etc., is for the purpose of distinguishing technical features only and should not be construed as indicating or implying relative importance, or implicitly indicating the number of technical features indicated, or implicitly indicating the order of the technical features indicated.

[0048] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, etc., are based on the orientation or positional relationship shown in the drawings and are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0049] In the description of this invention, it should be noted that, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0050] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of the present invention.

[0051] Unless otherwise specified, the reagents, methods and equipment used in this invention are all conventional reagents, methods and equipment in this technical field.

[0052] Example 1

[0053] A semiconductor laser, such as Figure 1 As shown, it includes the following structure:

[0054] Conductive layer;

[0055] An electron transport layer is provided on the upper surface of the conductive layer;

[0056] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0057] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0058] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0059] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0060] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0061] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0062] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0063] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0064] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0065] Specifically, the method for preparing the above-mentioned semiconductor laser, such as Figure 2 As shown, it includes the following steps:

[0066] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0067] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation with Ag as the material and a thickness of 5 μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes, leaving the area to be fabricated as the solar cell, while the remaining area is covered with photoresist.

[0068] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0069] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0070] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0071] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0072] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0073] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0074] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0075] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0076] 11) Fabrication of laser insulating layer: Deposit laser insulating layer by depositing SiO2 with a thickness of 100 nm using PECVD (plasma-enhanced chemical vapor deposition) equipment;

[0077] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Au. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0078] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0079] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0080] Example 2

[0081] The difference between Example 2 and Example 1 is that the thickness of the first metal electrode layer is different. The thickness of the first metal electrode layer in Example 1 is 5 μm, while the thickness of the first metal electrode layer in Example 2 is 20 μm.

[0082] A semiconductor laser includes the following structure:

[0083] Conductive layer;

[0084] An electron transport layer is provided on the upper surface of the conductive layer;

[0085] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0086] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0087] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0088] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0089] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0090] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0091] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0092] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0093] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0094] Specifically, the method for preparing the above-mentioned semiconductor laser includes the following steps:

[0095] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0096] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation with Ag as the material and a thickness of 20 μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes, leaving the area to be fabricated as the solar cell, while the remaining area is covered with photoresist.

[0097] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0098] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0099] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0100] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0101] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0102] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0103] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0104] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0105] 11) Fabrication of laser insulating layer: Deposit laser insulating layer by depositing SiO2 with a thickness of 100 nm using PECVD (plasma-enhanced chemical vapor deposition) equipment;

[0106] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Au. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0107] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0108] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0109] Example 3

[0110] The difference between Example 3 and Example 1 lies in the material of the first metal electrode layer. In Example 1, the material of the first metal electrode layer is Ag; in Example 3, the material of the first metal electrode layer is Ni.

[0111] A semiconductor laser, such as Figure 1 As shown, it includes the following structure:

[0112] Conductive layer;

[0113] An electron transport layer is provided on the upper surface of the conductive layer;

[0114] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0115] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0116] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0117] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0118] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0119] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0120] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0121] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0122] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0123] Specifically, the method for preparing the above-mentioned semiconductor laser includes the following steps:

[0124] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0125] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation technology. The material is Ni and the thickness is 5μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes. The area to be fabricated for the solar cell is left uncoated, and the remaining area is covered with photoresist.

[0126] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0127] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0128] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0129] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0130] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0131] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0132] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0133] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0134] 11) Fabrication of laser insulating layer: Deposit laser insulating layer by depositing SiO2 with a thickness of 100 nm using PECVD (plasma-enhanced chemical vapor deposition) equipment;

[0135] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Au. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0136] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0137] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0138] Example 4

[0139] The difference between Example 4 and Example 1 lies in the material of the laser insulating layer. The laser insulating layer in Example 1 is made of SiO2, while the laser insulating layer in Example 4 is made of Si3N4.

[0140] A semiconductor laser includes the following structure:

[0141] Conductive layer;

[0142] An electron transport layer is provided on the upper surface of the conductive layer;

[0143] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0144] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0145] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0146] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0147] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0148] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0149] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0150] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0151] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0152] Specifically, the method for preparing the above-mentioned semiconductor laser includes the following steps:

[0153] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0154] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation with Ag as the material and a thickness of 5 μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes, leaving the area to be fabricated as the solar cell, while the remaining area is covered with photoresist.

[0155] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0156] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0157] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0158] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0159] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0160] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0161] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0162] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0163] 11) Fabrication of laser insulating layer: Deposit laser insulating layer using PECVD (plasma-enhanced chemical vapor deposition) equipment to deposit Si3N4 material with a thickness of 100 nm;

[0164] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Au. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0165] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0166] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0167] Example 5

[0168] The difference between Example 5 and Example 1 is that the thickness of the laser insulating layer is different. The thickness of the laser insulating layer in Example 1 is 100 nm, while the thickness of the laser insulating layer in Example 5 is 200 nm.

[0169] A semiconductor laser includes the following structure:

[0170] Conductive layer;

[0171] An electron transport layer is provided on the upper surface of the conductive layer;

[0172] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0173] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0174] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0175] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0176] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0177] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0178] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0179] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0180] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0181] Specifically, the method for preparing the above-mentioned semiconductor laser includes the following steps:

[0182] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0183] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation with Ag as the material and a thickness of 5 μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes, leaving the area to be fabricated as the solar cell, while the remaining area is covered with photoresist.

[0184] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0185] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0186] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0187] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0188] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0189] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0190] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0191] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0192] 11) Fabrication of laser insulating layer: Deposit laser insulating layer by depositing SiO2 with a thickness of 200 nm using PECVD (plasma-enhanced chemical vapor deposition) equipment;

[0193] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Au. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0194] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0195] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0196] Example 6

[0197] The difference between Example 6 and Example 1 lies in the material of the second metal electrode layer. The second metal electrode layer material in Example 1 is Au, while the second metal electrode layer material in Example 6 is Al.

[0198] A semiconductor laser includes the following structure:

[0199] Conductive layer;

[0200] An electron transport layer is provided on the upper surface of the conductive layer;

[0201] A light-absorbing material layer is disposed on the upper surface of the electron transport layer;

[0202] A hole transport layer is disposed on the upper surface of the light-absorbing material layer;

[0203] A first metal electrode layer is disposed on the upper surface of the hole transport layer;

[0204] A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer;

[0205] A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer;

[0206] The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser.

[0207] An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

[0208] The method for preparing the above-mentioned semiconductor laser includes the following steps:

[0209] A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

[0210] Specifically, the method for preparing the above-mentioned semiconductor laser includes the following steps:

[0211] 1) Fabrication of substrate and sacrificial layer: Select GaAs substrate, and epitaxially grow InAlP sacrificial layer and AlGaAs laser epitaxial material layer on the substrate in sequence;

[0212] 2) Fabrication of the first metal electrode layer: The first metal electrode layer is fabricated on the surface of the epitaxially grown substrate using electron beam evaporation with Ag as the material and a thickness of 5 μm. Photoresist is coated on the first metal electrode layer, followed by photolithography, development, and cleaning processes, leaving the area to be fabricated as the solar cell, while the remaining area is covered with photoresist.

[0213] 3) Preparation of hole transport layer: Copper iodide and a solution containing rare metal (spiro-OMeTAD, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene) in a molar ratio of 50:1 were stirred and mixed at 60°C for 10 h to obtain a hole transport layer material precursor solution; the hole transport layer material precursor solution was spin-coated onto the area of ​​the solar cell to be fabricated, heated to 200°C, held for 20 min, and then naturally cooled to obtain the hole transport layer;

[0214] 4) Preparation of light-absorbing material layer: Lead iodide powder and methyl ammonium iodide powder in a molar ratio of 1:1 are mixed and dissolved in DMF (N,N-dimethylformamide) organic solvent to prepare a light-absorbing material precursor solution. The solution is spin-coated onto the hole transport layer. The sample is heated to 100°C and held for 10 min. Then it is naturally cooled to room temperature to obtain the light-absorbing material layer.

[0215] 5) Preparation of electron transport layer: 150 mg PCBM ((6,6)-phenyl-C61 butyrate methyl ester) was dissolved in 10 ml chlorobenzene solution, heated and stirred at 50 °C for 1 h, cooled and filtered to obtain electron transport layer material precursor solution, which was spin-coated onto light-absorbing material layer, heated to 70 °C and held for 10 min, and then naturally cooled to room temperature to obtain electron transport layer;

[0216] 6) Preparation of conductive layer: ITO is deposited on the electron transport layer by magnetron sputtering to obtain conductive layer; the sample is cleaned with isopropanol and pure water in sequence after removing photoresist with photoresist remover to obtain sample with solar cell unit.

[0217] 7) The product undergoes an epitaxial lift-off process. First, a corrosion-resistant protective adhesive is applied to the areas of the conductive layer and the first metal electrode layer where solar cells are not fabricated. This is then bonded to a transparent temporary support rigid substrate to ensure the reliability of the cell during the lift-off process. Simultaneously, conventional chip processing can be performed in subsequent laser chip fabrication. The corrosion-resistant protective adhesive is a high-temperature wax, uniformly covering the surface using a spin-coating method. The transparent rigid substrate is a sapphire substrate. The lift-off etching solution is a 25%-35% hydrochloric acid solution. Hydrochloric acid reacts with the InAlP material of the sacrificial layer but does not corrode materials in the laser epitaxial structure such as AlGaAs and AlAs, effectively separating the substrate from the epitaxial film to obtain a flexible device film with a temporary substrate.

[0218] 8) The flexible device film bonded to the temporary substrate is subjected to laser chip process. The sample surface is cleaned by ultrasonic cleaning with acetone, isopropanol and hydrochloric acid solution in sequence to remove impurities such as organic matter, metal particles and oxides from the sample surface.

[0219] 9) Spin-coat photoresist, perform double-sided alignment exposure, and then develop. Protect the area where the second metal electrode layer will be fabricated with photoresist. By using double-sided alignment photolithography, the size of the laser chip area can be made to be basically the same as the size of the battery on the back, which is beneficial to prevent damage to the battery during subsequent laser cutting. Etch with isopropanol to expose the oxide confinement layers on both sides;

[0220] 10) The AlGaAs material in the oxide confinement layer in the previous step is oxidized using a wet oxidation process to create an injection current confinement aperture.

[0221] 11) Fabrication of laser insulating layer: Deposit laser insulating layer by depositing SiO2 with a thickness of 100 nm using PECVD (plasma-enhanced chemical vapor deposition) equipment;

[0222] 12) Fabrication of the second metal electrode layer: A pattern of the second metal electrode layer is fabricated on the surface of the laser epitaxial material layer using photolithography. The insulating layer material deposited in the patterned area is etched using a 10% HF (hydrofluoric acid) solution to expose the area to be deposited with the second metal electrode layer. The electrode metal material is Al. The sample after metal deposition is immersed in photolithography stripping solution to remove the photoresist and the metal deposited on the photoresist surface. After rinsing with pure water, the second metal electrode layer is formed.

[0223] 13) The light exit port is etched using photolithography. The insulating layer material in this area is etched using a 10% HF solution. Then, the electrode contact layer is etched using a citric acid solution to expose the light exit port. The citric acid solution ratio is (citric acid:hydrogen peroxide:water = 1000:1000:240, volume ratio), and the etching temperature is 40℃. The sample is immersed in a photoresist remover to remove the photoresist, rinsed with pure water, and dried with nitrogen. The laser chip sample is then heated to separate the flexible device film from the transparent rigid substrate. A wax remover or toluene is used to clean and remove the corrosion-resistant protective adhesive coated on the conductive layer.

[0224] 14) The cleaned and dried flexible device film is alloyed to form a good ohmic contact between the front metal electrodes of the laser chip. Alloying process: temperature 350℃, time 3 minutes. The functional layers prepared above are cut out by laser cutting. The conductive layer and the second metal electrode layer are connected by electrode metal interconnects made of gold wire, thereby fabricating the semiconductor laser.

[0225] The above are merely embodiments of the present invention and do not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A semiconductor laser, characterized in that: It consists of the following structure: Conductive layer; An electron transport layer is provided on the upper surface of the conductive layer; A light-absorbing material layer is disposed on the upper surface of the electron transport layer; A hole transport layer is disposed on the upper surface of the light-absorbing material layer; A first metal electrode layer is disposed on the upper surface of the hole transport layer; A laser epitaxial material layer, wherein the laser epitaxial material layer is disposed on the upper surface of the first metal electrode layer; A laser insulating layer, wherein the laser insulating layer covers both sides of the laser epitaxial material layer; The second metal electrode layer is disposed on the upper surface of the epitaxial material layer of the laser. An electrode metal connection wire connects the conductive layer and the second metal electrode layer.

2. A semiconductor laser according to claim 1, characterized in that: The conductive layer includes at least one of an indium tin oxide layer and a silver nanowire layer.

3. A semiconductor laser according to claim 1, characterized in that: The thickness of the first metal electrode layer is 5-20 μm.

4. A semiconductor laser according to claim 3, characterized in that: The first metal electrode layer includes at least one of Ag, Au, Ni, Ge and Cu layers.

5. A semiconductor laser according to claim 1, characterized in that: The laser insulating layer includes at least one of a SiO2 layer and a Si3N4 layer.

6. A semiconductor laser according to claim 5, characterized in that: The thickness of the insulating layer of the laser is 100 nm.

7. A semiconductor laser according to claim 1, characterized in that: The number of the second metal electrode layers is greater than or equal to 2, and the second metal electrode layers do not contact each other.

8. A method for preparing a semiconductor laser as described in any one of claims 1 to 7, characterized in that: Includes the following steps: A laser epitaxial material layer, a first metal electrode layer, a hole transport layer, a light-absorbing material layer, an electron transport layer, and a conductive layer are sequentially prepared. A laser insulating layer is deposited on both sides of the laser epitaxial material layer. A second metal electrode layer is prepared on the upper surface of the laser epitaxial material layer. The conductive layer and the second metal electrode layer are connected by a metal interconnect to obtain the semiconductor laser.

9. The method according to claim 8, characterized in that: The preparation of the hole transport layer includes the following steps: mixing copper halide and a solution containing rare metals, and heating to obtain the hole transport layer.

10. The application of a semiconductor laser as described in any one of claims 1 to 7 in laser communication or optical storage.

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